Inertial Sensors and Electronic Devices

Abstract

An inertial sensor and an electronic device are provided. The mechanical structure layer (220) of the inertial sensor includes a stator (221) and a mover (222), and the detection electrode (241) is disposed on the insulating substrate (211). The mover (222) is driven to move relative to the stator (221), and the change in capacitance generated by the detection electrode (241) and the mover (222) is detected, so that the motion status of the inertial sensor or the motion status of the electronic device can be determined. The insulating substrate (211) is in a sealed connection to the mechanical structure layer (220) to wrap around the first electrical connector (212) on the insulating substrate (211). In this way, the electrical connection of the components in the inertial sensor can be implemented when the sealed connection is implemented and the vacuum degree is improved.

Description

[Technical Field]

[0001] This application claims priority to Chinese Patent Application No. 202111014475.2, entitled "Inertial Sensor and Electronic Device," filed with the State Intellectual Property Office of China on August 31, 2021. This Chinese patent application is incorporated herein by reference in its entirety.

[0002] The present application relates to the field of inertial sensors and electronic devices, and more particularly to inertial sensors and electronic devices. [Background technology]

[0003] An electronic device may use an inertial sensor (which may also be referred to as an inertial measurement unit (IMU)) to detect motion status such as acceleration and tilt angle of the electronic device, for example, to identify shock, rotation, and vibration of the electronic device. Furthermore, the electronic device may implement functions such as navigation, orientation, screen rotation, and camera image stabilization. The performance of the inertial sensor applied to the electronic device needs to be improved. For example, the detection accuracy of the inertial sensor should be high. In another example, the space occupied by the inertial sensor in the electronic device may be minimized. In another example, the inertial sensor should be easy to wire. Summary of the Invention

[0004] The present application provides an inertial sensor and an electronic device, and aims to optimize the performance of the inertial sensor applied to the electronic device.

[0005] According to a first aspect, a stacked substrate layer, a mechanical structure layer, and a cover layer are included, wherein the mechanical structure layer is in a sealed connection between the substrate layer and the cover layer.

[0006] The substrate layer includes a substrate, the substrate being an insulator, and the mechanical structure layer being in a hermetic connection to the substrate to form a hermetic connection between the mechanical structure layer and the substrate, the hermetic connection being an insulator.

[0007] The substrate layer further includes a first electrical connector attached to a side of the substrate closer to the mechanical structure layer, the first electrical connector including an internal pin.

[0008] A first end face of the internal pin contacts the substrate. A second end face of the internal pin contacts the mechanical structure layer. A side face of the internal pin is connected between the first end face and the second end face. A side face of the internal pin contacts the hermetic connection portion. The internal pin is electrically connected to the mechanical structure layer.

[0009] The substrate may be in a sealed connection to the mechanical structure layer by using a bonding process, and internal stress may be generated in the portion formed through the sealed connection between the substrate base and the mechanical structure layer. The internal stress may act on the internal pin, such that the portion formed through the sealed connection between the substrate base and the mechanical structure layer may press against the internal pin. After the internal pin is subjected to the compressive force, the stability of the signal transmitted by the internal pin may be improved, and the impedance of the first electrical connector may be reduced.

[0010] Because some materials may volatilize gases and the mechanical structure layer has high requirements for vacuum degree, the substrate is directly placed in a sealed connection with the mechanical structure layer, which helps to reduce the possibility of gases being volatilized by the components of the inertial sensor in the cavity including the substrate layer, the mechanical structure layer and the cover layer, and helps to maintain the vacuum degree of the cavity including the substrate layer, the mechanical structure layer and the cover layer.

[0011] The substrate is directly placed in a sealed connection to the mechanical structure layer, so that the substrate and the mechanical structure layer can be easily aligned, which helps to reduce the processing precision for aligning and connecting the substrate with the mechanical structure layer.

[0012] The substrate is placed directly in a sealed connection to the mechanical structure layer, which helps to reduce the material used by the inertial sensor and the processes for processing this material, which further helps to reduce the cost of manufacturing the inertial sensor.

[0013] In one embodiment, the mechanical structure layer includes a stator and a mover, the stator is fixed to the substrate layer, and the mover can move relative to the stator. The first electrical connector further includes a line and a detection electrode, the line is electrically connected between the internal pin and the detection electrode, and the detection electrode is disposed opposite the mover to generate capacitance. The inertial sensor further includes a chip, the chip is configured to drive the mover to move relative to the stator using the internal pin and to acquire a change in capacitance value of the capacitance generated by the mover and the detection electrode using the line and the detection electrode.

[0014] Since the detection electrode is disposed on the insulating substrate and the detection electrode is disposed near the mover, the distance between the detection electrode and another conductor portion of the detection component is long, and the parasitic capacitance that affects the detection result is not easily formed, so that the result obtained by the chip can be more accurate. In this way, the motion status of the electronic device or the motion status of the inertial sensor can be more accurately obtained.

[0015] In relation to the first aspect, in some implementations of the first aspect, the substrate includes a substrate groove, and the first electrical connector is at least partially housed within the substrate groove.

[0016] Because the first electrical connector can be at least partially accommodated in the substrate groove, the space occupied by the first electrical connector in the detection component (especially the space occupied in the thickness direction) can be small. The first electrical connector can be at least partially accommodated in the substrate groove. This facilitates increasing the thickness of the first electrical connector, helps reduce the impedance of the first electrical connector, and further helps improve the detection performance of the inertial sensor. The substrate groove can provide accommodation space for the first electrical connector, which helps flexibly design structural parameters such as the thickness and arrangement of the first electrical connector, so that the first electrical connector is provided with multiple conductive layers. Therefore, the substrate groove is arranged on the substrate, so that the line arrangement of the first electrical connector can be sparse.

[0017] In some implementations of the first aspect, the substrate layer further includes a line protection layer disposed on a side of the substrate closer to the mechanical structure layer and positioned within a cavity formed through a sealed connection between the mechanical structure layer and the substrate, the line protection layer wrapping around a portion of an outer edge of the first electrical connector.

[0018] The line protection layer may be insulated. The line protection layer helps to reduce the possibility of line damage. The line protection layer may be located within a sealed or vacuum cavity containing the substrate layer, the mechanical structure layer, and the cover layer, so that the substrate layer and the mechanical structure layer are directly connected.

[0019] In relation to the first aspect, in some implementations of the first aspect, the first electrical connector includes a first conductive layer and a second conductive layer, the first conductive layer including a first portion of the line of the first electrical connector, and the second conductive layer including a second portion of the line of the first electrical connector.

[0020] The multiple conductive layers can facilitate flexible wiring by facilitating the implementation of line jumpers. To improve or maintain the capacitance detection performance of the inertial sensor, the spacing between the lines should not be excessively small. Compared to a single-layer first electrical connector, the line arrangement density of a first electrical connector provided with multiple conductive layers can be sparse. This helps to improve or maintain the capacitance detection performance of the inertial sensor.

[0021] In relation to the first aspect, in some implementations of the first aspect, the substrate layer comprises: a second electrical connector attached to the side of the board remote from the first electrical connector; and a via extending through the substrate and electrically connecting the first electrical connector and the second electrical connector; The chip is electrically connected to the first electrical connector by using a second electrical connector and vias.

[0022] Through the vias, the circuitry located within the hermetic cavity, including the substrate layer, the mechanical structure layer, and the cover layer, can be brought out of the hermetic cavity, which facilitates electrical connections between the chip and the circuitry in the substrate layer and also helps reduce the lateral space occupied by the inertial sensor.

[0023] In one embodiment, the first electrical connector further includes a line and an internal pin, the line being electrically connected between the internal pin and the detection electrode.

[0024] The second electrical connector includes external pins, which are electrically connected to the chip.

[0025] The vias are electrically connected between the internal and external pins.

[0026] Since it is usually difficult to change the ports of the chip, the lines can be arranged by using the first electrical connector to adjust the position of the external pins so that the external pins can more easily align with the ports of the chip. Because the first electrical connector is located inside the airtight cavity including the substrate layer, the mechanical structure layer, and the cover layer, the second electrical connector is located outside the airtight cavity including the substrate layer, the mechanical structure layer, and the cover layer. The preferential arrangement of the lines on the first electrical connector compared to the arrangement of the second electrical connector helps reduce the possibility of the lines being damaged by external contaminants.

[0027] In relation to the first aspect, in some implementations of the first aspect, the second electrical connector covers the via and is in a sealed connection to the substrate.

[0028] The second electrical connector may be hermetically sealed and attached to the substrate to prevent external contaminants from entering the vias, which helps maintain the detection accuracy of the inertial sensor.

[0029] With respect to the first aspect, in some implementations of the first aspect, the first electrical connector covers the via and is in a sealed connection to the substrate.

[0030] The first electrical connector may be hermetically sealed and attached to the substrate to prevent external contaminants that have passed through the vias from entering the airtight cavity including the substrate layer, the mechanical structure layer, and the cover layer, which helps to maintain the detection accuracy of the inertial sensor.

[0031] In relation to the first aspect, in some implementations of the first aspect, the inertial sensor further includes a chip, the chip being disposed on a side of the substrate layer away from the mechanical structure layer.

[0032] The chip is disposed on a substrate layer, which helps to shorten the electrical connection between the chip and the mechanical structure layer and helps to reduce the impedance of the inertial sensor.

[0033] In relation to the first aspect, in some implementations of the first aspect, the chip is disposed on a side of the cover layer away from the mechanical structure layer, and the cover layer comprises: a cover substrate, wherein the cover substrate is a conductor, the cover substrate is in hermetic connection to the mechanical structure layer, and the cover substrate includes a first portion and a second portion; an insulating portion, wherein the insulating portion penetrates the cover substrate and the first portion of the cover substrate and the second portion of the cover substrate are located on opposite sides of the insulating portion; and a third electrical connector, wherein the third electrical connector is attached to a side of the cover substrate closer to the chip, the third electrical connector being electrically connected to a first portion of the mechanical structure layer through a first portion of the cover substrate, and the third electrical connector being electrically connected to the internal pin through a second portion of the cover substrate and a second portion (a) of the mechanical structure layer; It has.

[0034] The insulating portion is disposed on the cover layer, so that the cover layer can be divided into multiple portions that do not short-circuit each other, which facilitates signal transmission using the cover layer and improves the wiring flexibility of the inertial sensor.

[0035] In relation to the first aspect, in some implementations of the first aspect, the first portion of the cover substrate and the mechanical structure layer are connected by a mating connector, and the first portion of the cover substrate further includes an overflow groove, the overflow groove being located between the mating connector and the insulating portion.

[0036] The mating connectors may preferentially flow to the overflow channels at high temperatures, which helps reduce the likelihood of the mating connectors flowing from the first portion of the cover substrate to the second portion of the cover substrate and further helps reduce the likelihood of the first portion of the cover substrate and the second portion of the cover substrate becoming conductive.

[0037] In relation to the first aspect, in some implementations of the first aspect, the inertial sensor further includes a chip, the chip being disposed on a side of the cover layer away from the mechanical structure layer.

[0038] The chip can control the mechanical structure layer by using a cover layer, which helps improve the flexibility of the electrical connection between the chip and the mechanical structure layer.

[0039] In relation to the first aspect, in some implementations of the first aspect, the resistivity of the substrate is 10 9 Greater than Ωm.

[0040] The substrate has a high resistivity, which helps to reduce the parasitic capacitance generated by using the substrate in the inertial sensor, and further helps to improve the detection accuracy of the inertial sensor.

[0041] In relation to the first aspect, in some implementations of the first aspect, the material of the substrate is glass, and the material of the mechanical structure layer is single crystal silicon or polycrystalline silicon.

[0042] The processing of silicon materials is mature, and the performance of glass is similar to that of silicon, for example, the thermal expansion coefficient of glass can be close to that of silicon, which helps to improve the mechanical stability of the inertial sensor.

[0043] According to a second aspect, there is provided an electronic device including the inertial sensor of any implementation of the first aspect. [Brief explanation of the drawings]

[0044] [Figure 1] 1 is a schematic diagram of a structure of an electronic device according to an embodiment of the present application;

[0045] [Figure 2] 1 is a schematic diagram of the structure of an inertial sensor according to an embodiment of the present application;

[0046] [Figure 3] FIG. 1 is a schematic diagram of another inertial sensor structure according to an embodiment of the present application;

[0047] [Figure 4] 1 is a schematic diagram of the structure of an inertial sensor according to an embodiment of the present application;

[0048] [Figure 5] FIG. 5 is a diagram of the inertial sensor in FIG. 4.

[0049] [Figure 6] 5 is a schematic diagram of the structure of the first electrical connector in FIG. 4.

[0050] [Figure 7] FIG. 5 is a schematic diagram of the structure of the mechanical structure layer in FIG. 4.

[0051] [Figure 8] FIG. 1 is a schematic diagram of another inertial sensor structure according to an embodiment of the present application;

[0052] [Figure 9] FIG. 9 is a diagram of the inertial sensor in FIG. 8.

[0053] [Figure 10] 9 is a schematic diagram of the structure of the first electrical connector in FIG. 8.

[0054] [Figure 11] FIG. 10 is a schematic diagram of yet another inertial sensor structure according to an embodiment of the present application;

[0055] [Figure 12] FIG. 10 is a schematic diagram of yet another inertial sensor structure according to an embodiment of the present application;

[0056] [Figure 13] FIG. 13 is a schematic diagram of the structure of the first conductive layer in FIG. 12.

[0057] [Figure 14] FIG. 13 is a schematic diagram of the structure of the second conductive layer in FIG. 12.

[0058] [Figure 15] FIG. 10 is a schematic diagram of yet another inertial sensor structure according to an embodiment of the present application;

[0059] [Figure 16] FIG. 16 is a schematic diagram of the structure of the third electrical connector in FIG.

[0060] [Figure 17] 16 is a schematic diagram of the structure of the first electrical connector in FIG. 15.

[0061] [Figure 18] 9 is a schematic flowchart of a processing method of the inertial sensor in FIG. 8.

[0062] [Figure 19] 9 is a schematic flowchart of a processing method of the inertial sensor in FIG. 8.

[0063] [Figure 20] 9 is a schematic flowchart of a processing method of the inertial sensor in FIG. 8.

[0064] [Figure 21] 9 is a schematic flowchart of a processing method of the inertial sensor in FIG. 8.

[0065] [Figure 22] 9 is a schematic flowchart of a processing method of the inertial sensor in FIG. 8. DETAILED DESCRIPTION OF THE INVENTION

[0066] The technical solutions of the present application will be described below with reference to the accompanying drawings.

[0067] 1 is a schematic diagram of the structure of an electronic device 100 according to an embodiment of the present application. For example, the electronic device 100 may be a terminal consumer product or a 3C electronic product (a computer, communication or consumer electronic product), such as a mobile phone, a portable computer, a tablet computer, an e-book reader, a notebook computer, a digital camera, a wearable device, a headset, a watch or a stylus. The embodiment shown in FIG. 1 will be described by taking an example in which the electronic device 100 is a mobile phone.

[0068] The electronic device 100 may include a housing 11, a display 12, and a circuit board assembly 13. Specifically, the housing 11 may include a frame and a rear cover. The frame may be located between the display 12 and the rear cover. The frame may surround an outer edge of the display 12 and an outer edge of the rear cover. A cavity formed between the display 12, the frame, and the rear cover may be configured to accommodate the circuit board assembly 13. The circuit board assembly 13 may include a circuit board and an inertial sensor 20 disposed on the circuit board. The circuit board may be, for example, a main board or a sub-board.

[0069] 2 and 3 show two embodiments of the inertial sensor 20. In the embodiment shown in FIG. 2, the inertial sensor 20 may be an acceleration sensor, or may be a gyroscope, or may integrate an acceleration sensor and a gyroscope. In the embodiment shown in FIG. 3, the inertial sensor 20 may integrate a gyroscope and an acceleration sensor. In the embodiment in which the inertial sensor 20 integrates an acceleration sensor and a gyroscope, the inertial sensor 20 may be a sensor that can implement both the functions of an acceleration sensor and a gyroscope.

[0070] The gyroscope sensor may be configured to determine the motion orientation of the electronic device 100. In some embodiments, the angular velocity of the electronic device 100 around three axes (i.e., X, Y, and Z axes) may be determined using the gyroscope sensor. The gyroscope sensor may be used for image stabilization. For example, when the shutter is pressed, the gyroscope sensor detects the angle of jitter of the electronic device 100; calculates the distance the lens module needs to compensate based on this angle; and enables the lens to offset the jitter of the electronic device 100 through an inverse motion to implement image stabilization. The gyroscope sensor may also be used in navigation scenarios and immersive gaming scenarios.

[0071] The acceleration sensor may detect acceleration values ​​of the electronic device 100 in each direction (generally, three axes). When the electronic device 100 is stationary, the magnitude and direction of gravity may be detected. The acceleration sensor may further be configured to identify the orientation of the electronic device 100, and may be applied to applications such as switching between landscape and portrait modes or a pedometer.

[0072] As shown in FIGS. 2 and 3 , the inertial sensor 20 may include a chip 21 and one or more sensing components 22. Some or all of the sensing components 22 may also be referred to as micro-electro-mechanical systems (MEMS). The chip 21 may be electrically connected to the sensing components 22. In one embodiment shown in FIG. 2 , the inertial sensor 20 may include a single sensing component 22. The chip 21 may use the sensing component 22 to acquire signals related to acceleration and / or angular velocity. In one embodiment shown in FIG. 3 , the inertial sensor 20 may include two sensing components 22. The chip 21 may use one sensing component 22 to acquire acceleration related signals and another sensing component 22 to acquire angular velocity related signals.

[0073] 1, 2 and 3, the principle of obtaining the motion status of the electronic device 100 by using the inertial sensor 20 will be described below.

[0074] The sensing component 22 may include a mover, a stator, and a sensing electrode. The stator may be fixed within the electronic device 100. The mover may move relative to the stator. A gap exists between the stator and the mover, and as a result, the stator and the mover may generate a capacitance. The capacitance generated by the stator and the mover may be used to drive the mover to move relative to the stator. The capacitance may be generated between the mover and the sensing electrode. The capacitance generated by the mover and the sensing electrode may be used to sense the motion status of the electronic device 100. In one embodiment, the mover and the stator may include, for example, a comb structure. The comb-like mover may be a movable comb. The comb-like stator may be a fixed comb.

[0075] The chip 21 may send an AC signal to the detection component 22 to drive the mover of the detection component 22 to vibrate at a predetermined frequency relative to the stator. The vibration does not essentially change the distance between the detection electrode and the mover, and the capacitance value of the capacitance generated by the detection electrode and the mover remains essentially unchanged. Therefore, when no motion (including translation, rotation, etc.) occurs within the electronic device 100, the capacitance value of the capacitance generated by the detection electrode and the mover remains essentially unchanged. When the electronic device 100 moves, the movement of the electronic device 100 may apply an additional force to the mover. This force may change the distance between the detection electrode and the mover, thereby changing the capacitance value of the capacitance generated by the detection electrode and the mover. The chip 21 may obtain a signal related to the motion status of the electronic device 100 by detecting the change in the capacitance value of the capacitance generated by the detection electrode and the mover.

[0076] The chip 21 and the sensing component 22 may be electrically connected to the sensing component 22 by using multiple pins on the sensing component 22. The chip 21 may be electrically connected to the multiple pins by methods such as wire bonding, spot soldering, conductive bonding, or conductive material coating. The chip 21 may use some of the multiple pins to drive the mover on the sensing component 22 to vibrate. The chip 21 may further use other of the multiple pins to acquire the capacitance value of the capacitance generated by the stator and the mover.

[0077] The sensing component 22 may be made primarily of conductive materials. In addition to the conductive parts related to motion status detection, if other conductive parts disconnected from each other are placed very close to each other, parasitic capacitance may be generated. As a result, the accuracy of the capacitance detection results obtained from the sensing component 22 by the chip 21 may be affected.

[0078] 4 is a schematic diagram of the structure of an inertial sensor 20 according to an embodiment of the present application. The inertial sensor 20 shown in FIG. 4 may correspond to the inertial sensor 20 shown in FIG.

[0079] The inertial sensor 20 may include a chip 21 and a sensing component 22. The sensing component 22 may include a stacked substrate layer 210, a mechanical structure layer 220, and a cover layer 230. The mechanical structure layer 220 may be located between the cover layer 230 and the substrate layer 210. The mechanical structure layer 220 may also be referred to as a MEMS layer. The mechanical structure layer 220 may be a key layer of the sensing component 22. The mechanical structure layer 220 may be made of a conductive material or may be made primarily of a conductive material. The mechanical structure layer 220 may include a stator 221 and a mover 222. In one embodiment shown in FIG. 4, the chip 21 may be disposed on the cover layer 230. In another embodiment, the chip 21 may alternatively be disposed on the substrate layer 210.

[0080] Through bonding, the mechanical structure layer 220 may be fixed to the substrate layer 210, and the mechanical structure layer 220 is in hermetically sealed connection to the substrate layer 210. Through bonding, the cover layer 230 may be fixed to the mechanical structure layer 220, and the cover layer 230 is in hermetically sealed connection to the mechanical structure layer 220. Thus, components of the inertial sensor 20 for detecting a motion status of the electronic device 100 (such as the mover 222 and the detection electrode 241 shown in FIG. 4 ) may be housed in an airtight cavity including the substrate layer 210, the mechanical structure layer 220, and the cover layer 230.

[0081] The substrate layer 210 may include a substrate 211. The substrate 211 may be prepared by using an insulating material (e.g., glass). The substrate 211 may be in a hermetic connection to the mechanical structure layer 220. A hermetic connection portion 215 between the substrate 211 and the mechanical structure layer 220 may be an insulator. In other words, signals in the mechanical structure layer 220 may not be conducted through the hermetic connection portion 215.

[0082] In some embodiments, the resistivity of the substrate 211 is 10 9 In some other embodiments, the thermal expansion coefficient of the substrate 211 may be close to that of the mechanical structural layer 220. Because the bonding process generally requires heat, having the thermal expansion coefficient of the substrate 211 close to that of the mechanical structural layer 220 helps to improve the stability of the bonding relationship between the substrate 211 and the mechanical structural layer 220 and reduces the possibility of cracks being generated in the substrate layer 210 or the mechanical structural layer 220. This helps to improve the mechanical stability of the inertial sensor.

[0083] In one embodiment, the substrate 211 may be prepared by using glass, and the mechanical structure layer 220 may be prepared by using monocrystalline silicon or polycrystalline silicon. As shown in FIG. 4 , the substrate 211 and the mechanical structure layer 220 may be integrated through anodic bonding to implement a hermetic connection between the substrate 211 and the mechanical structure layer 220. The temperature used for anodic bonding may be low, which helps to reduce internal stress in the substrate 211 and the mechanical structure layer 220.

[0084] The substrate layer 210 may further include a first electrical connector 212 disposed on the substrate 211. The first electrical connector 212 may be attached to a side of the substrate 211 that is closer to the mechanical structure layer 220.

[0085] For example, the first electrical connector 212 may include a detection electrode 241. The detection electrode 241 may be disposed opposite the mover 222 in the mechanical structure layer 220. A signal output by the detection electrode 241 may be transmitted to the chip 21.

[0086] In another example, the first electrical connector 212 may further include an internal pin 242 and an external pin 243. The internal pin 242 may be connected to a stator 221 in the mechanical structure layer 220. The external pin 243 may be electrically connected to the chip 21. In one embodiment shown in FIG. 4, the chip 21 may be electrically connected to the external pin 243 by using an electrical connection wire 245.

[0087] The internal pin 242 may contact the hermetic connecting portion 215, which includes the substrate 211 and the mechanical structure layer 220. The internal pin 242 may include a first end face and a second end face arranged parallel to the substrate layer 210. The first end face may be in contact with the mechanical structure layer 220, and the second end face may be in contact with the substrate layer 210. In this manner, the internal pin 242 may be electrically connected to the mechanical structure layer 220. The internal pin 242 may further include a side face connected between the first end face and the second end face, and the side face may be in contact with the hermetic connecting portion 215. In one embodiment shown in FIG. 4 , the hermetic connecting portion 215 may be wrapped around the internal pin 242. In another embodiment, the hermetic connecting portion 215 may be wrapped around one side of the internal pin 242, and the other side may extend outside the hermetic connecting portion 215.

[0088] In another example, the first electrical connector 212 may further include a line (not shown in FIG. 4 ) that may be electrically connected between the detection electrode 241 and the internal pin 242, or alternatively, may be electrically connected between the internal pin 242 and the external pin 243, or alternatively, may be electrically connected between the detection electrode 241 and the external pin 243.

[0089] When the line passes through the sealed connection portion 215, which includes the substrate 211 and the mechanical structure layer 220, the sealed connection portion may contact the side of the line.

[0090] In one embodiment, the chip 21 may output electrical signals to the stator 221 in the mechanical structure layer 220 by using the external pins 243, lines and internal pins 242 of the first electrical connector 212, resulting in the mover 222 in the mechanical structure layer 220 moving relative to the stator 221.

[0091] In another embodiment, one port of the chip 21 may be electrically connected to the detection electrode 241 of the first electrical connector 212 by using the external pin 243 and line of the first electrical connector 212, and another port of the chip 21 may be electrically connected to the mover 222 in the mechanical structure layer 220 by using the external pin 243, line and internal pin 242 of the first electrical connector 212, so that the chip 21 can acquire changes in the capacitance value of the capacitance generated by the detection electrode 241 and the mover 222.

[0092] 4, the sensing electrodes may alternatively be disposed at other locations on the inertial sensor. For example, the sensing electrodes may be disposed on the stator 221 in the mechanical structure layer 220. In another example, the sensing electrodes may be disposed on the side of the cover layer 230 closer to the mechanical structure layer 220.

[0093] Because the detection electrode 241 is disposed on the insulating substrate 211 and is disposed close to the mover 222, the distance between the detection electrode 241 and another conductor portion of the detection component 22 is long, and capacitance that affects the detection result is not easily formed, so that the change in capacitance value acquired by the chip 21 can be more accurate. In this way, the motion status of the electronic device or the motion status of the inertial sensor 20 is more accurately acquired.

[0094] In some embodiments, the substrate layer 210 may further include a line protection layer. The line protection layer may be disposed on the side of the substrate 211 closer to the mechanical structure layer 220. The line protection layer may be insulating. The line protection layer may wrap around at least a portion of the outer edge of the lines of the first electrical connector 212. For example, the lines of the first electrical connector 212 may be attached between the line protection layer and the substrate 211. The line protection layer may include pin openings. The internal pins 242 or external pins 243 of the first electrical connector 212 may be housed in the pin openings, with the line protection layer exposed. This is useful for implementing electrical connections between the external pins 243 and the chip 21 or between the internal pins 242 and the mechanical structure layer 220.

[0095] The bonding method between the mechanical structure layer 220 and the cover layer 230 may be, for example, anodic bonding or eutectic bonding.

[0096] In one embodiment, the cover layer 230 may be in a hermetically sealed connection to the mechanical structure layer 220 through eutectic bonding. As shown in FIG. 4 , bonding portions are pre-disposed on both the cover layer 230 and the mechanical structure layer 220. The bonding portions in the cover layer 230 and the bonding portions in the mechanical structure layer 220 are thermally integrated to form a bonding connector 231 connected between the cover layer 230 and the mechanical structure layer 220, thereby implementing a hermetically sealed connection between the cover layer 230 and the mechanical structure layer 220. The cover layer 230 and the mechanical structure layer 220 may be made of, for example, single crystal silicon.

[0097] In another embodiment, the cover layer 230 and the mechanical structural layer 220 may be integrated through anodic bonding to implement a hermetic connection between the cover layer 230 and the mechanical structural layer 220. The cover layer 230 may be made of, for example, monocrystalline silicon. The mechanical structural layer 220 may be made of, for example, polycrystalline silicon.

[0098] In some embodiments, the cover layer 230 may be made primarily of an insulating material or a conductive material. For example, the cover layer 230 may be made of glass, single-crystal silicon, or polycrystalline silicon. The cover layer 230 is prepared using an insulating material, such as glass. This helps to reduce the possibility that the cover layer 230 and the mover 222 in the mechanical structure layer 220 will generate capacitance that will affect the detection results. The cover layer 230 is prepared using a conductive material, such as single-crystal silicon, so that the cover layer 230 is used to form the conductive circuit of the inertial sensor 20.

[0099] 4, the cover layer 230 may further include a groove, which may be disposed opposite the mover 222 in the mechanical structure layer 220. The groove may be recessed in a direction away from the mover 222. The groove disposed in the cover layer 230 helps to reduce the possibility that the cover layer 230 and the mover 222 may generate capacitance that affects the detection results.

[0100] To obtain a schematic diagram of the structure shown in FIG. 5, the inertial sensor 20 can be observed in the Z direction shown in FIG. 4. To obtain a schematic diagram of the structure shown in FIG. 6, the first electrical connector 212 on the substrate 211 can be observed in the Z direction shown in FIG. 4. It should be understood that the inertial sensor 20 shown in FIG. 5 or the first electrical connector 212 shown in FIG. 6 are only one embodiment. Those skilled in the art can easily deduce other possible structures based on the solutions provided herein. For example, the first electrical connector 212 can alternatively include more or fewer components.

[0101] 5, chip 21 may include port 25a, port 25b, and port 25c. First electrical connector 212 on substrate layer 210 may include external pin 243a, external pin 243b, and external pin 243c. External pin 243a may be electrically connected to port 25a using electrical connection wire 245a. External pin 243b may be electrically connected to port 25b using electrical connection wire 245b. External pin 243c may be electrically connected to port 25c using electrical connection wire 245c. In another embodiment, the ports of chip 21 and external pins 243 may alternatively be electrically connected using solder balls, conductive fillers, conductive adhesives, or the like.

[0102] 6, the first electrical connector 212 on the substrate layer 210 may further include a line 244a, a line 244b, and a line 244c. The first electrical connector 212 on the substrate layer 210 may further include a detection electrode 241a, a detection electrode 241b, and an internal pin 242. The line 244a may be electrically connected between the detection electrode 241a and the external pin 243a. The line 244b may be electrically connected between the detection electrode 241b and the external pin 243b. The line 244c may be electrically connected between the internal pin 242 and the external pin 243c. The internal pin 242 may be electrically connected to the mechanical structure layer 220 shown in FIG. 4. Referring to FIG. 4, the detection electrode 241a may be disposed opposite one mover 222 in the mechanical structure layer 220, and the detection electrode 241b may be disposed opposite another mover 222 in the mechanical structure layer 220.

[0103] 5 and 6 , the chip 21 can obtain a change in the capacitance value of the capacitance generated by the detection electrode 241a and the mover 222 on the mechanical structure layer 220 by using the external pin 243a, the line 244a, the detection electrode 241a, the external pin 243c, the line 244c, and the internal pin 242. The chip 21 can obtain a change in the capacitance value of the capacitance generated by the detection electrode 241b and the mover 222 by using the external pin 243b, the line 244b, the detection electrode 241b, the external pin 243c, the line 244c, and the internal pin 242. The chip 21 can drive the mover 222 by using the external pin 243c, the line 244c, and the internal pin 242, thereby moving the mover 222 relative to the stator 221 on the mechanical structure layer 220.

[0104] To obtain a schematic view of the structure shown in Fig. 7, the mechanical structure layer 220 can be observed in the Z direction shown in Fig. 4. Fig. 7 shows a possible embodiment of the mechanical structure layer 220. The mechanical structure layer 220 provided in the embodiments of the present application may not be limited to the embodiment shown in Fig. 7.

[0105] The mechanical structure layer 220 may include a fixed comb 2210 and a movable comb 2220. The fixed comb 2210 may belong to the stator 221 shown in FIG. 4. The movable comb 2220 may belong to the mover 222 shown in FIG. 4. The fixed comb 2210 may be integrally fixed to the inertial sensor 20. The movable comb 2220 may move relative to the fixed comb 2210. Referring to FIG. 4, the movable comb 2220 may be disposed opposite the detection electrode 241 on the substrate layer 210 to generate capacitance by using the movable comb 2220 and the detection electrode 241. The capacitance value of the capacitance generated by the movable comb 2220 and the detection electrode 241 may indicate the motion status of the inertial sensor 20.

[0106] The fixed combs 2210 and the movable combs 2220 may be arranged alternately. The fixed comb 2210 may include a plurality of first combs 2211, and the movable comb 2220 may include a plurality of second combs 2221. The first combs 2211 of the fixed comb 2210 may extend into a gap between two second combs 2221 of the movable comb 2220. The second combs 2221 of the movable comb 2220 may extend into a gap between two first combs 2211 of the fixed comb 2210. In other words, a second comb 2221 exists between two adjacent first combs 2211, and a first comb 2211 exists between two adjacent second combs 2221. To generate capacitance, a gap exists between the adjacent first combs 2211 and second combs 2221.

[0107] The mechanical structure layer 220 may further include a first anchor area 2212 and a second anchor area 2213. The first anchor area 2212 and the second anchor area 2213 may belong to the stator 221 shown in FIG. 4. The first anchor area 2212 and the second anchor area 2213 may be integrally fixed to the inertial sensor 20. The first anchor area 2212 and the second anchor area 2213 may be connected to both ends of the movable comb 2220 and may be electrically connected to the movable comb 2220. The chip 21 may apply an AC signal to the first anchor area 2212 and the second anchor area 2213, and the movable comb 2220 may move relative to the fixed comb 2210 based on the AC signal. For example, the movable comb 2220 may move in a direction closer to the first anchor area 2212 and away from the second anchor area 2213. In another example, the movable comb 2220 may move in a direction closer to the second anchor area 2213 and away from the first anchor area 2212. The vibration direction of the movable comb 2220 may include a direction from the first anchor area 2212 to the second anchor area 2213 and a direction from the second anchor area 2213 to the first anchor area 2212.

[0108] The mechanical structure layer 220 may further include a first elastic area 2222 and a second elastic area 2223. The first elastic area 2222 and the second elastic area 2223 may belong to the mover 222 shown in FIG. 4. The first elastic area 2222 may be connected between the first anchor area 2212 and a first end of the movable comb 2220, and the second elastic area 2223 may be connected between the second anchor area 2213 and a second end of the movable comb 2220. When the movable comb 2220 is close to the first anchor area 2212 and far from the second anchor area 2213, the first elastic area 2222 may be compressed and the second elastic area 2223 may be extended. When the movable comb 2220 is closer to the second anchor area 2213 and farther from the first anchor area 2212, the first telescopic area 2222 may be extended and the second telescopic area 2223 may be compressed.

[0109] When the inertial sensor 20 is in motion, for example, when the inertial sensor 20 is rotated or accelerated, the movable comb 2220 may move in a direction perpendicular to the drive direction of the movable comb 2220. For example, a portion of the movable comb 2220 may have a displacement perpendicular to the plane of the paper in FIG. 3D . Referring to FIGS. 4 and 7 , the spacing between the movable comb 2220 and the detection electrode 241 may be changed to change the capacitance value of the capacitance generated by the movable comb 2220 and the detection electrode 241. For example, the center of the movable comb 2220 may be fixed integrally with the inertial sensor 20 using the first anchor area 2212 and the second anchor area 2213, and the side of the movable comb 2220 closer to the fixed comb 2210 may be closer to or farther from the detection electrode 241. The first and second telescopic areas 2222 and 2223 may be correspondingly extended or compressed.

[0110] In the embodiment shown in FIGS. 4 to 7 , the cover layer 230 may not be involved in the electrical connection between the chip 21 and the mechanical structure layer 220. In another possible embodiment, the cover layer 230 may instead be involved in the electrical connection between the chip 21 and the mechanical structure layer 220. For example, the cover layer 230 may include a cover substrate and an electrical connector. The cover substrate is prepared by using an insulating material. The electrical connector may be disposed, for example, on the side of the cover substrate closer to the mechanical structure layer 220 and electrically connected to the mechanical structure layer 220. The electrical connector may be, for example, a mating connector. The electrical connector on the cover substrate may be, for example, an electrode, a line, or a pin. For a related description of the electrical connector in the cover layer 230, please refer to the related description of the first electrical connector 212 in the substrate layer 210 of one embodiment provided in this application.

[0111] FIG. 8 is a schematic diagram of the structure of another inertial sensor 20 according to an embodiment of the present application.

[0112] Similar to the inertial sensor 20 shown in FIG. 4 , the inertial sensor 20 shown in FIG. 8 may include a chip 21 and a sensing component 22. The sensing component 22 may include a stacked substrate layer 210, a mechanical structure layer 220, and a cover layer 230. The mechanical structure layer 220 may be located between the substrate layer 210 and the cover layer 230. To form an airtight cavity between the substrate layer 210 and the cover layer 230, the substrate layer 210 may be in a sealed connection to the mechanical structure layer 220, and the cover layer 230 may be in a sealed connection to the mechanical structure layer 220. The mechanical structure layer 220 may include a mover 222 and a stator 221, where the stator 221 may be fixed to the substrate layer 210 and the mover 222 may move relative to the stator 221 in the airtight cavity between the substrate layer 210 and the cover layer 230. The substrate layer 210 may include an insulating substrate 211 and a first electrical connector 212 disposed on the substrate 211. The chip 21 may drive the mover 222 using the first electrical connector 212 to vibrate the mover 222 at a high frequency relative to the stator 221. The chip 21 may further use the first electrical connector 212 to acquire a change in the capacitance value of the capacitance generated by the detection electrode 241 and the mover 222.

[0113] 4 and 8 is that the chip 21 may be disposed on a side of the substrate layer 210 that is remote from the mechanical structure layer 220. The substrate 211 may include a first electrical connector 212 and a second electrical connector 213. The first electrical connector 212 and the second electrical connector 213 are attached to two sides of the substrate 211. The first electrical connector 212 may be disposed on a side of the substrate 211 that is close to the mechanical structure layer 220. The second electrical connector 213 may be disposed on a side of the substrate 211 that is remote from the mechanical structure layer 220. The substrate 211 may further include a via 214. The via 214 may pass through the substrate 211 and be electrically connected between the first electrical connector 212 and the second electrical connector 213.

[0114] For a specific implementation of the first electrical connector 212, please refer to the specific implementation of the first electrical connector 212 shown in FIG.

[0115] The second electrical connector 213 may include an external pin 243. For example, the external pin 243 may be connected to the via 214. The external pin 243 may be disposed opposite the via 214. The chip 21 may drive the mover 222 using the external pin 243, the via 214, and the first electrical connector 212 to vibrate the mover 222 relative to the stator 221, and may acquire a change in the capacitance value of the capacitance generated by the mover 222 and the detection electrode 241.

[0116] In some embodiments, the second electrical connector 213 may further include a line, which may be electrically connected, for example, between the via 214 and the external pin 243. In one embodiment, to protect the line, a line protection layer may further be disposed on the side of the substrate 211 away from the mechanical structure layer 220. The line protection layer may be insulated. The line protection layer may wrap around at least a portion of the outer edge of the line. For example, the line may be attached between the line protection layer and the substrate 211. The line protection layer may include a pin opening. The external pin 243 may be housed in the pin opening, and the line protection layer may be exposed. This is useful for implementing the electrical connection between the external pin 243 and the chip 21. To reduce the possibility of external contaminants entering the via 214, one component of the line, the external pin 243, or the line protection layer may cover the via, which may be in a sealed connection to the substrate 211.

[0117] To obtain a schematic diagram of the structure shown in FIG. 9 , the inertial sensor 20 can be observed in a direction opposite to the Z direction shown in FIG. 8 (the second electrical connector 213 and vias 214 on the substrate base 211 are indicated by dotted lines). To obtain a schematic diagram of the structure shown in FIG. 10 , the first electrical connector 212 on the substrate 211 can be observed in the Z direction shown in FIG. 8 . It should be understood that the inertial sensor 20, the second electrical connector 213, or the first electrical connector 212 shown in FIG. 10 are merely one embodiment. Those skilled in the art can easily deduce other possible structures based on the solutions provided herein. For example, the first electrical connector 212 and the second electrical connector 213 can alternatively include more or fewer components.

[0118] Assume that chip 21 may include port a, port b, and port c. As shown in FIG. 9, second electrical connector 213 on substrate layer 210 may include external pin 243 a, external pin 243 b, and external pin 243 c. External pin 243 a may be electrically connected to port a. External pin 243 b may be electrically connected to port b. External pin 243 c may be electrically connected to port c. In the embodiment shown in FIG. 9, the electrical connection between the ports of chip 21 and external pins 243 may be, for example, by using solder balls. Alternatively, the ports of chip 21 and external pins 243 may be electrically connected by using electrical connection wires, conductive fillers, conductive adhesives, etc.

[0119] 10 , the first electrical connector 212 on the substrate layer 210 may further include a line 244a and a line 244b. The first electrical connector 212 on the substrate layer 210 may further include a detection electrode 241a and a detection electrode 241b. The first electrical connector 212 on the substrate layer 210 may further include an internal pin 242a, an internal pin 242b, and an internal pin 242c. The line 244a may be electrically connected between the detection electrode 241a and the internal pin 242a. The line 244b may be electrically connected between the internal pin 242b and the internal pin 242c. The internal pin 242c may be electrically connected to the mechanical structure layer 220 shown in FIG. 4 . Referring to FIG. 4, the detection electrode 241a may be disposed opposite one mover 222 in the mechanical structure layer 220, and the detection electrode 241b may be disposed opposite another mover 222 in the mechanical structure layer 220.

[0120] 9 and 10, the substrate layer 210 may further include vias 214a, 214b, and 214c. The via 214a may be electrically connected between the internal pin 242a and the external pin 243a. The via 214b may be electrically connected between the internal pin 242b and the external pin 243b. The via 214c may be electrically connected between the detection electrode 241b and the external pin 243c.

[0121] 9 and 10, the chip 21 can acquire a change in the capacitance value of the capacitance generated by the detection electrode 241a and the mover 222 in the mechanical structure layer 220 by using the external pin 243a, the via 214a, the internal pin 242a, the line 244a, the detection electrode 241a, the external pin 243b, the via 214b, the internal pin 242b, the line 244b, and the internal pin 242c. The chip 21 can acquire a change in the capacitance value of the capacitance generated by the detection electrode 241b and the mover 222 by using the external pin 243c, the via 214c, the detection electrode 241b, the external pin 243b, the via 214b, the internal pin 242b, the line 244b, and the internal pin 242c. The chip 21 can be moved relative to the stator 221 in the mechanical structure layer 220 by driving the mover 222 using the external pins 243b, the vias 214b, the internal pins 242b, the lines 244b and the internal pins 242c.

[0122] 8 to 10, the external pins 243 of the inertial sensor 20 may be positioned to correspond to the ports of the chip 21 by using lines on the first electrical connector 212 and / or lines on the second electrical connector 213. This may be useful to implement a stable fixing and connection scheme between the external pins 243 of the inertial sensor 20 and the ports of the chip 21, for example by using solder balls, conductive fillers or adhesives.

[0123] 11 is a schematic diagram of the structure of yet another inertial sensor 20 according to an embodiment of the present application. A slight difference between the inertial sensor 20 shown in FIG. 11 and the inertial sensor 20 shown in FIGS. 8 to 10 is that the via 214a may be connected between the detection electrode 241a and the external pin 243a, the via 214b may be connected between the internal pin 242 and the external pin 243b, and the via 214c may be connected between the detection electrode 241b and the external pin 243c. In other words, if necessary, unnecessary lines or unnecessary internal pins may be omitted in the electrical connection between the first electrical connector 212 and the second electrical connector 213 to reduce the impedance of the inertial sensor.

[0124] In the embodiment shown in FIGS. 8 to 11 , the cover layer 230 may not be involved in the electrical connection between the chip 21 and the mechanical structure layer 220. In another possible embodiment, the cover layer 230 may instead be involved in the electrical connection between the chip 21 and the mechanical structure layer 220. For example, the cover layer 230 may include a cover substrate, an electrical connector 1, and an electrical connector 2. The cover substrate is prepared by using an insulating material. The electrical connector 1 may be disposed, for example, on the side of the cover substrate closer to the mechanical structure layer 220 and electrically connected to the mechanical structure layer 220. The electrical connector 2 may be disposed on the side of the substrate remote from the mechanical structure layer 220. The cover layer 230 may further include a via penetrating the cover substrate. The via penetrating the cover substrate may electrically connect between the electrical connector 1 and the electrical connector 2. The electrical connector 1 or the electrical connector 2 may include, for example, one or more of an electrode, a line, or a pin. For a related description of the electrical connector 213 in the cover layer 230, please refer to the related description of the second electrical connector 213 in the substrate layer 210 in an embodiment provided herein. For a related description of the vias in the cover layer 230, please refer to the related description of the vias 214 in the substrate layer 210 in an embodiment provided herein.

[0125] FIG. 11 is a schematic diagram of yet another structure of an inertial sensor 20 according to an embodiment of the present application.

[0126] Similar to the inertial sensor 20 shown in FIG. 8 , the inertial sensor 20 shown in FIG. 11 may include a chip 21 and a sensing component 22. The sensing component 22 may include a stacked substrate layer 210, a mechanical structure layer 220, and a cover layer 230. The mechanical structure layer 220 may be located between the substrate layer 210 and the cover layer 230. To form an airtight cavity between the substrate layer 210 and the cover layer 230, the substrate layer 210 may be in a sealed connection to the mechanical structure layer 220, and the cover layer 230 may be in a sealed connection to the mechanical structure layer 220. The mechanical structure layer 220 may include a mover 222 and a stator 221, where the stator 221 may be fixed to the substrate layer 210 and the mover 222 may move relative to the stator 221 in the airtight cavity between the substrate layer 210 and the cover layer 230. The substrate layer 210 may include an insulating substrate 211, and may further include a first electrical connector 212 and a second electrical connector 213 arranged on two sides of the substrate 211, and may further include a via 214 electrically connected between the first electrical connector 212 and the second electrical connector 213. The chip 21 may be arranged on the side of the substrate layer 210 away from the mechanical structure layer 220. The chip 21 may drive the mover 222 by using the second electrical connector 213, the via 214, and the first electrical connector 212, thereby vibrating the mover 222 at a high frequency relative to the stator 221. The chip 21 may further obtain a change in the capacitance value of the capacitance generated by the detection electrode 241 and the mover 222 by using the first electrical connector 212, the via 214, and the second electrical connector 213.

[0127] 11 and 8 is that the first electrical connector 212 may include multiple stacked conductive layers. The multiple conductive layers may include, for example, a first conductive layer 2461 and a second conductive layer 2462. The first conductive layer 2461 may include one or more of a detection electrode, a line, an internal pin, or an external pin. The second conductive layer 2462 may be a line. The first conductive layer 2461 may be disposed on a side of the second conductive layer 2462 closer to the mechanical structure layer 220. The first conductive layer 2461 may include a first portion of the line of the first electrical connector 212, and the second conductive layer 2462 may include a second portion of the line of the first electrical connector 212.

[0128] In some embodiments, the substrate layer 210 may further include a line protection layer 247. The line protection layer 247 may be insulated. The line may be attached to the side of the substrate 211 closer to the mechanical structure layer 220. The line protection layer 247 may wrap around at least a portion of the outer edge of the first electrical connector 212. The line protection layer 247 may be exposed on the side of the conductive layers of the first electrical connector 212 closer to the mechanical structure layer 220. A portion of the first electrical connector 212 exposed outside the line protection layer 247 (e.g., a portion of the first conductive layer 2461) may be electrically connected to another component (e.g., the mechanical structure layer 220 and, in another example, the chip 21). Alternatively, the portion of the first electrical connector 212 exposed outside the line protection layer 247 may generate capacitance with the mover 222. To reduce the possibility of the first electrical connector 212 being oxidized, the unexposed portion of the first electrical connector 212 (e.g., the second conductive layer 2462) may be encapsulated within the line protection layer 247.

[0129] 11 , the first conductive layer 2461 may be the conductive layer of the first electrical connector 212 closest to the mechanical structure layer 220. The line protection layer 247 may wrap around the end face of the first conductive layer 2461 closest to the substrate 211 and the side faces of the first conductive layer 2461. The line protection layer 247 may be at least partially exposed on the end face of the first conductive layer 2461 closest to the mechanical structure layer 220. For example, the detection electrodes 241, external pins, or internal pins may be exposed outside the line protection layer 247. The second conductive layer 2462 may be attached between the substrate base 211 and the line protection layer 247. To protect the second conductive layer 2462, the line protection layer 247 may cover and wrap around the second conductive layer 2462.

[0130] In some embodiments, the substrate 211 may include a first substrate groove 2111. The first electrical connector 212 may be partially or entirely housed within the first substrate groove 2111. Because the first electrical connector 212 may be at least partially housed within the first substrate groove 2111, the space occupied by the first electrical connector 212 within the detection component 22 (particularly the space occupied in the thickness direction) may be small. The first electrical connector 212 may be at least partially housed within the first substrate groove 2111. This makes it easy to increase the thickness of the first electrical connector 212, helps to reduce the impedance of the first electrical connector 212, and further helps to improve the detection performance of the inertial sensor 20. The first substrate groove 2111 may provide an accommodating space for the first electrical connector 212, which helps to flexibly design structural parameters such as the thickness of the first electrical connector 212 and the arrangement of the first electrical connector 212, so that the first electrical connector 212 is provided with multiple conductive layers. Therefore, the first substrate groove 2111 is disposed on the substrate 211, so that the line arrangement of the first electrical connector 212 can be sparse.

[0131] To obtain a schematic diagram of the structure shown in FIG. 13 , the first conductive layer 2461 of the first electrical connector 212 can be viewed in the Z direction shown in FIG. 12 . To obtain a schematic diagram of the structure shown in FIG. 14 , the second conductive layer 2462 of the first electrical connector 212 can be viewed in the Z direction shown in FIG. 12 . In the embodiment shown in FIGS. 12 to 14 , the first electrical connector 212 can include two conductive layers: the first conductive layer 2461 and the second conductive layer 2462. The first conductive layer 2461 can be the conductive layer closest to the mechanical structure layer 220. For the structure of the second electrical connector 213 and the structure of the vias 214 shown in FIG. 11 , please refer to the embodiment shown in FIG. 9 . It should be understood that the first electrical connector 212 shown in FIGS. 13 and 14 is just one embodiment. A person skilled in the art can easily deduce other possible structures based on the solutions provided herein. For example, the first electrical connector 212 may alternatively include more or fewer components.

[0132] Assume that chip 21 may include port a, port b, and port c. Second electrical connector 213 on substrate layer 210 may include external pin a, external pin b, and external pin c. External pin a may be electrically connected to port a. External pin b may be electrically connected to port b. External pin c may be electrically connected to port c. The electrical connection between the ports of chip 21 and the external pins may be, for example, by using solder balls. Alternatively, the ports of chip 21 and the external pins may be electrically connected by using electrical connection wires, conductive fillers, conductive adhesives, etc.

[0133] 13 and 14 , the first electrical connector 212 may include a line 244a, a line 244b, an internal pin 242a, an internal pin 242b, an internal pin 242c, an internal pin 242d, an internal pin 242e, a detection electrode 241a, and a detection electrode 241b. The substrate layer 210 may further include a via a, a via b, and a via c. The via a may be electrically connected between the internal pin 242c and the external pin a. The via b may be electrically connected between the internal pin 242e and the external pin b. The via c may be electrically connected between the detection electrode 241b and the external pin c.

[0134] The detection electrode 241a may occupy the first conductive layer 2461 and the second conductive layer 2462. The line 244a and the internal pin 242a may occupy the first conductive layer 2461. The internal pin 242c may occupy the second conductive layer 2462. The line 244a may be electrically connected between the detection electrode 241a and the internal pin 242a. The internal pin 242a may be disposed opposite the internal pin 242c, and the internal pin 242a may be electrically connected to the internal pin 242c.

[0135] Internal pin 242b may occupy first conductive layer 2461. Referring to Figure 12, internal pin 242b may be electrically connected to mechanical structure layer 220. Line 244b, internal pin 242d, and internal pin 242e may occupy second conductive layer 2462. Line 244b may be electrically connected between internal pin 242d and internal pin 242e. Internal pin 242b may be disposed opposite internal pin 242d, and internal pin 242b may be electrically connected to internal pin 242d.

[0136] The sensing electrode 241b may occupy the first conductive layer 2461 and the second conductive layer 2462.

[0137] The chip 21 can acquire a change in the capacitance value of the capacitance generated by the detection electrode 241a and the mover 222 in the mechanical structure layer 220 by using the external pin a, the via a, the internal pin 242c, the internal pin 242a, the line 244a, the detection electrode 241a, the external pin b, the via b, the internal pin 242e, the line 244b, the internal pin 242d, and the internal pin 242b. The chip 21 can acquire a change in the capacitance value of the capacitance generated by the detection electrode 241b and the mover 222 by using the external pin c, the via c, the detection electrode 241b, the external pin b, the via b, the internal pin 242e, the line 244b, the internal pin 242d, and the internal pin 242b. The chip 21 can be moved relative to the stator 221 in the mechanical structure layer 220 by driving the mover 222 using the external pin b, the via b, the internal pin 242e, the line 244b, the internal pin 242d and the internal pin 242b.

[0138] The multiple conductive layers can facilitate flexible wiring by facilitating the implementation of line jumpers. To improve or maintain the capacitance detection performance of the inertial sensor 20, the spacing between lines should not be excessively small. Compared to the first electrical connector 212 having a single layer, the line arrangement density of the first electrical connector 212 having multiple conductive layers can be sparse. This helps to improve or maintain the capacitance detection performance of the inertial sensor 20.

[0139] In the embodiment shown in FIGS. 12 to 14 , the cover layer 230 may not be involved in the electrical connection between the chip 21 and the mechanical structure layer 220. In another possible embodiment, the cover layer 230 may instead be involved in the electrical connection between the chip 21 and the mechanical structure layer 220. For example, the cover layer 230 may include a cover substrate and an electrical connector. The cover substrate is prepared using an insulating material. The electrical connector may be disposed, for example, on the side of the cover substrate closer to the mechanical structure layer 220 and electrically connected to the mechanical structure layer 220. The electrical connector may include, for example, multiple conductive layers. In some embodiments, the cover substrate may include a second substrate groove. The electrical connector on the cover substrate may be at least partially housed within the second substrate groove. In another embodiment, the cover layer 230 may further include a line protection layer. The line protection layer may wrap around at least a portion of the outer edge of the electrical connector. For a related description of the cover layer 230, please refer to another embodiment provided in this application. Details will not be described again here.

[0140] FIG. 15 is a schematic diagram of yet another structure of an inertial sensor 20 according to an embodiment of the present application.

[0141] Similar to the inertial sensor 20 shown in FIG. 4 , the inertial sensor 20 shown in FIG. 15 may include a chip 21 and a sensing component 22. The sensing component 22 may include a stacked substrate layer 210, a mechanical structure layer 220, and a cover layer 230. The mechanical structure layer 220 may be located between the substrate layer 210 and the cover layer 230. To form an airtight cavity between the substrate layer 210 and the cover layer 230, the substrate layer 210 may be in a sealed connection to the mechanical structure layer 220, and the cover layer 230 may be in a sealed connection to the mechanical structure layer 220. The mechanical structure layer 220 may include a mover 222 and a stator 221, where the stator 221 may be fixed to the substrate layer 210 and the mover 222 may move relative to the stator 221 in the airtight cavity between the substrate layer 210 and the cover layer 230. The substrate layer 210 may include an insulating substrate 211 and a first electrical connector 212 disposed on the substrate 211. The chip 21 may be disposed on the side of the cover layer 230 away from the mechanical structure layer 220. The chip 21 may use the first electrical connector 212 to drive the mover 222 to vibrate at a high frequency relative to the stator 221. The chip 21 may further use the first electrical connector 212 to acquire a change in the capacitance value of the capacitance generated by the detection electrode 241 and the mover 222.

[0142] The difference between the embodiment shown in FIG. 4 and the embodiment shown in FIG. 15 is that the chip 21 can drive the mover 222 by using the cover layer 230 and the first electrical connector 212 to vibrate it at a high frequency relative to the stator 221 and / or obtain a change in the capacitance value of the capacitance generated by the detection electrode 241 and the mover 222.

[0143] The cover layer 230 may include a cover substrate 232. The cover substrate 232 may be prepared using a conductive material. For example, the cover substrate 232 and the mechanical structure layer 220 may use the same type of conductive material. In some embodiments, the thermal expansion coefficient of the cover substrate 232 may be close to the thermal expansion coefficient of the mechanical structure layer 220. The cover layer 230 is in hermetic connection to the mechanical structure layer 220 through bonding, for example, anodic bonding or eutectic bonding.

[0144] 15 , both the cover substrate 232 and the mechanical structure layer 220 can be prepared by using a material of single crystal silicon. The cover substrate 232 is in hermetically sealed connection to the mechanical structure layer 220 through eutectic bonding. A mating connector 231 can be present between the cover substrate 232 and the mechanical structure layer 220. The mating connector 231 can be a conductive material. The cover substrate 232 can be electrically connected to the mechanical structure layer 220 by using the mating connector 231. The mating connector 231 can be made of, for example, a metal material. The mating connector 231 can be an internal pin on the cover substrate 232 and is configured to implement an electrical connection between the cover substrate 232 and the mechanical structure layer 220.

[0145] The cover layer 230 may alternatively include a third electrical connector 233 disposed on the cover substrate 232. The third electrical connector 233 may be attached to a side of the cover substrate 232 closer to the chip 21. The third electrical connector 233 may include external pins electrically connected to the chip 21. The third electrical connector 233 may alternatively include lines and / or detection electrodes. The chip 21 may be electrically connected to the cover substrate 232 using the third electrical connector 233. Because the cover substrate 232 is electrically connected to the mechanical structure layer 220, the chip 21 and the mechanical structure layer 220 may be electrically connected.

[0146] For example, the third electrical connector 233 may transmit an electrical signal from the chip 21 to the mover 222 and some of the stators 221 in the mechanical structure layer 220, so that the mover 222 in the mechanical structure layer 220 moves relative to the stators 221. In another example, a signal from the detection electrode 241 may be transmitted to the chip 21 by using the cover substrate 232 and the third electrical connector 233, so that the chip 21 can obtain a signal related to the motion status of the inertial sensor 20. In one embodiment shown in FIG. 15 , the detection electrode 241 may be disposed on a side of the substrate 211 away from the mechanical structure layer 220. In another possible embodiment, the detection electrode 241 may be disposed on a stator 221 in the mechanical structure layer 220, or alternatively, on a side of the cover layer 230 closer to the mechanical structure layer 220.

[0147] The third electrical connector 233 may include a plurality of external pins 243. The plurality of external pins 243 may be electrically connected to a plurality of portions of the cover substrate 232, respectively. In other words, any one of the external pins 243 may be electrically connected to a corresponding portion of the cover substrate 232 and may be disconnected from the other portions of the cover substrate 232. In order to disconnect the plurality of portions of the cover substrate 232, that is, to prevent electrical continuity between the plurality of portions of the cover substrate 232, the mechanical structure layer 220 may alternatively include insulating portions 234 for separating the plurality of portions of the cover substrate 232. The insulating portions 234 may be configured to penetrate the cover substrate 232.

[0148] Assume that one external pin 243 of the third electrical connector 233 may be electrically connected to the first portion 2321 of the cover substrate 232 and may be disconnected from the second portion 2322 of the cover substrate 232. The first portion 2321 of the cover substrate 232 may be electrically connected to the mechanical structure layer 220, and the second portion 2322 of the cover substrate 232 may be disconnected from the mechanical structure layer 220. To separate the first portion 2321 of the cover substrate 232 and the second portion 2322 of the cover substrate 232, an insulating portion 234 in the cover layer 230 may be located between the first portion 2321 of the cover substrate 232 and the second portion 2322 of the cover substrate 232. This helps to prevent short circuits or conduction between the first portion 2321 of the cover substrate 232 and the second portion 2322 of the cover substrate 232.

[0149] The mechanical structure layer 220 may be in a hermetically sealed connection to the cover layer 230 by using a mating connector 231. The mating connector 231 may be formed by heating the mating portions in the mechanical structure layer 220 and the mating portions in the cover layer 230 at high temperatures. During processing, the mating connector 231 may optionally flow. There are possible cases where the mating connector 231 may be connected across the insulating portion 234 between the first portion 2321 and the second portion 2322 of the cover substrate 232. The first portion 2321 and the second portion 2322 of the cover substrate 232 may be located on two sides of the insulating portion 234.

[0150] To prevent electrical conduction between the first portion 2321 and the second portion 2322 of the cover substrate 232 due to the use of the mating connector 231, the cover substrate 232 may further include an overflow groove 235. The overflow groove 235 may be located between the insulating portion 234 and the first portion 2321 of the cover substrate 232. The mating connector 231 may preferentially flow into the overflow groove 235 at high temperatures. This helps to reduce the likelihood of the mating connector 231 flowing from the first portion 2321 of the cover substrate 232 to the second portion 2322 of the cover substrate 232, and further helps to reduce the likelihood of electrical conduction between the first portion 2321 of the cover substrate 232 and the second portion 2322 of the cover substrate 232.

[0151] In some embodiments, the cover layer 230 may further include a line protection layer 248. The line protection layer 248 may be disposed on a side of the cover substrate 232 closer to the chip 21. The line protection layer 248 may be insulated. The line protection layer 248 may wrap around at least a portion of the outer edge of the third electrical connector 233. For example, the lines of the third electrical connector 233 may be attached between the line protection layer 248 and the substrate 211. The line protection layer 248 may include pin openings. The external pins 243 of the third electrical connector 233 may be housed in the pin openings, with the line protection layer 248 exposed. This is useful for implementing electrical connections between the pins and the chip 21 or between the pins and the mechanical structure layer 220.

[0152] To obtain a schematic view of the structure shown in FIG. 16, the third electrical connector 233 can be viewed in the Z direction shown in FIG. 15. To obtain a schematic view of the structure shown in FIG. 17, the first electrical connector 212 can be viewed in the Z direction shown in FIG. 15. It should be understood that the third electrical connector 233 shown in FIG. 16 and the first electrical connector 212 shown in FIG. 17 are merely one embodiment. Those skilled in the art can easily deduce other possible structures based on the solutions provided herein. For example, the first electrical connector 212 and the third electrical connector 233 can alternatively include more or fewer components.

[0153] Assume that chip 21 may include port 1, port 2, and port 3. Third electrical connector 233 in mechanical structure layer 220 may include external pin 243a, external pin 243b, and external pin 243c. External pin 243a may be electrically connected to port 1. External pin 243b may be electrically connected to port 2. External pin 243c may be electrically connected to port 3. The manner of electrical connection between the ports of chip 21 and external pins 243 may include, for example, solder balls, electrical connection wires, conductive fillers, or conductive adhesives.

[0154] The third electrical connector 233 may further include a line 244a, a line 244b, and a line 244c. The third electrical connector may further include an internal pin 242a, an internal pin 242b, and an internal pin 242c. The line 244a may be electrically connected between the internal pin 242a and the external pin 243a. The line 244b may be electrically connected between the internal pin 242b and the external pin 243b. The line 244c may be electrically connected between the internal pin 242c and the external pin 243c. The internal pins 242b and 242c may be, for example, mating connectors.

[0155] 15 , the cover substrate 232 may include a portion 2321, a portion 232a, and a portion 232b. An insulating portion 234 is disposed within the cover substrate 232 to disconnect the portions 2321, 232a, and 232b from one another. The portion 2321 of the cover substrate 232 may be connected to the internal pin 242c. The portion 232a of the cover substrate 232 may be connected to the internal pin 242a. The portion 232b of the cover substrate 232 may be connected to the internal pin 242b.

[0156] The mechanical structure layer 220 may include a conductive portion, a conductive portion 220, and a conductive portion. The first electrical connector 212 may include internal pin 242d and internal pin 242e. The conductive portion in the mechanical structure layer 220 may be electrically connected between internal pin 242a and internal pin 242e. The conductive portion b in the mechanical structure layer 220 may be electrically connected between internal pin 242b and internal pin 242d. The conductive portion c in the mechanical structure layer 220 may be electrically connected to internal pin 242c.

[0157] First electrical connector 212 may further include detection electrode 241 a, detection electrode 241 b, line 244 d, and line 244 e. Line 244 d may be electrically connected between internal pin 242 d and detection electrode 241 a. Line 244 e may be electrically connected between internal pin 242 e and detection electrode 241 b.

[0158] The chip 21 can acquire a change in the capacitance value of the capacitance generated by the detection electrode 241a and the mover 222 in the mechanical structure layer 220 by using the external pin b, the line 244b, the internal pin 242b, the portion 220b in the mechanical structure layer 220, the internal pin 242d, the line 244d, the detection electrode 241a, the external pin c, the line 244c, the internal pin 242c, and the portion 220c in the mechanical structure layer 220. The chip 21 can acquire a change in the capacitance value of the capacitance generated by the detection electrode 241b and the mover 222 in the mechanical structure layer 220 by using the external pin a, the line 244a, the internal pin 242a, the portion 220a in the mechanical structure layer 220, the internal pin 242e, the line 244e, the detection electrode 241b, the external pin c, the line 244c, the internal pin 242c, and the portion 220c in the mechanical structure layer 220. The chip 21 can be moved relative to the stator 221 in the mechanical structure layer 220 by driving the mover 222 by using the external pins, the lines 244c, the internal pins 242c, and the portion 220c in the mechanical structure layer 220.

[0159] 15 to 17, both the cover layer 230 and the substrate layer 210 may participate in the electrical connection between the chip 21 and the mechanical structure layer 220. This helps to improve the flexibility of the wiring of the inertial sensor.

[0160] To enable those skilled in the art to understand the processing process of the inertial sensor 20 provided in the embodiment of the present application, the embodiment of the present application will use the embodiments shown in Figures 18 to 22 to describe the processing process of the inertial sensor 20 shown in Figure 11. For another processing process of the inertial sensor 20 provided in the embodiment of the present application, please refer to the embodiments shown in Figures 18 to 22.

[0161] FIG. 18 is a flowchart of a process for processing the substrate layer 210 of the inertial sensor 20.

[0162] 701: Obtain an insulating substrate 211.

[0163] 702: Processing vias on the substrate 211 and depositing conductive material in the vias to form vias 214 through the substrate 211.

[0164] Vias are processed on the substrate 211, for example, by using a through glass via (TGV) process.

[0165] The conductive material may include a metal such as, for example, copper, tungsten, silver, gold, aluminum, germanium, or lithium. In another example, the conductive material may include an organic conductive material. In one embodiment, the conductive material may be filled into a via. In another embodiment, the conductive material may be attached to the inner wall of the via.

[0166] 703: A first electrical connector 212 is placed on one side of the substrate 211, and the first electrical connector 212 is attached to the vias 214 of the substrate 211.

[0167] The first electrical connector 212 may be in a sealed connection to the substrate 211, which helps prevent outside air from passing through the connection area between the first electrical connector 212 and the substrate 211 and further helps reduce the possibility of contamination occurring within the inertial sensor 20. The first electrical connector 212 may include one or more conductive layers. The process of attaching the first electrical connector 212 to the substrate 211 may include, for example, but is not limited to, evaporation, sputtering, or lift-off.

[0168] In some embodiments, the first line protection layer may be further processed on the side of the first electrical connector 212 away from the substrate 211. The first line protection layer may include, but is not limited to, nitride. For example, through deposition, the first line protection layer may be disposed on a portion of the substrate 211 and a portion of the first electrical connector 212. Another portion of the first electrical connector 212 may be exposed to the outside of the first line protection layer. The portion of the first electrical connector 212 exposed to the outside of the first line protection layer may include a conductive plating layer. The conductive plating layer may include, but is not limited to, gold or an alloy such as lithium. The conductive plating layer may help reduce the likelihood of oxidation of the unexposed portion of the first electrical connector 212.

[0169] FIG. 19 is a flowchart of the processing process of the mechanical structure layer 220 of the inertial sensor 20.

[0170] 704: Obtain a mechanical structure layer raw material 320, where the mechanical structure layer raw material 320 includes a first raw material layer 321, a second raw material layer 322 and a raw material connecting layer 233, and the first raw material layer 321 and the second raw material layer 322 are connected by using the raw material connecting layer 233.

[0171] 704 can be considered, for example, as a silicon-on-insulator (SOI).

[0172] The material of the raw material connection layer 233 may be different from the material of the first raw material layer 321 and the material of the second raw material layer 322. In some embodiments, the etching efficiency (or removal efficiency) of the first raw material layer 321 and the etching efficiency (or removal efficiency) of the second raw material layer 322 may be higher than the etching efficiency of the raw material connection layer 233. For example, the first raw material layer 321 and the second raw material layer 322 may be mainly made of monocrystalline silicon or polycrystalline silicon, and the raw material connection layer 233 may be mainly made of glass. The bonding method between the raw material connection layer 233 and the first raw material layer 321 may be, for example, anodic bonding. Similarly, the bonding method between the raw material connection layer 233 and the second raw material layer 322 may be, for example, anodic bonding.

[0173] 705: Etch the first raw material layer 321 of the mechanical structure layer raw material 320 on the side of the first raw material layer 321 away from the second raw material layer 322 to form the mechanical structure layer 220.

[0174] For example, the mechanical structure layer 220 may include a first connecting end 223, a mover 222, and a stator 221. In a first round of etching, shallow grooves are etched in the first raw material layer 321 to form the first connecting end 223 in the mechanical structure layer 220. In a second round of etching, deep grooves are etched in the first raw material layer 321 to form the mover 222 and the stator 221 in the mechanical structure layer 220. After the raw material connecting layer 233 is etched, the etching process may be terminated.

[0175] FIG. 20 is a flow chart of the assembly process of the mechanical structure layer 220 and the substrate layer 210 of the inertial sensor 20 .

[0176] 706: Connect the mechanical structural layer 220 of the mechanical structural layer raw material 320 to the side of the substrate 211 where the first electrical connector 212 is located through bonding.

[0177] The side of the mechanical structure layer 220 away from the second raw material layer 322 can be connected to the substrate 211 through bonding. The bonding method between the mechanical structure layer 220 and the substrate 211 includes, for example, anodic bonding.

[0178] 707: A second electrical connector 213 is placed on the side of the substrate 211 away from the first electrical connector 212, and the second electrical connector 213 is attached to the via 214 of the substrate 211. The second electrical connector 213 may include external pins 243 configured to electrically connect to the chip 21.

[0179] The second electrical connector 213 may be in a sealed connection to the substrate 211, which helps prevent outside air from passing through the vias 214 and further helps reduce the possibility of contamination occurring within the inertial sensor 20. The second electrical connector 213 may include one or more conductive layers. The process of attaching the second electrical connector 213 to the substrate 211 may include, for example, but is not limited to, evaporation, sputtering, or lift-off.

[0180] In some embodiments, a second line protection layer may be further processed on the side of the second electrical connector 213 away from the substrate 211. The second line protection layer may include, but is not limited to, nitride. For example, through deposition, the second line protection layer may be disposed on a portion of the substrate 211 and a portion of the second electrical connector 213. Another portion of the second electrical connector 213 may be exposed to the outside of the second line protection layer. The portion of the second electrical connector 213 exposed to the outside of the second line protection layer may include a conductive plating layer. The conductive plating layer may include, but is not limited to, gold or an alloy such as lithium. The conductive plating layer may help reduce the likelihood of oxidation of the unexposed portion of the second electrical connector 213.

[0181] 708: The second raw material layer 322 and the raw material connection layer 233 of the mechanical structure layer raw material 320 are removed.

[0182] For example, etching can be performed one or more times to remove the second source material layer 322 and the source material connection layer 233.

[0183] 707: The first bonding portion 261 is disposed on the side of the mechanical structure layer 220 away from the substrate layer 210.

[0184] The first bonding portion 261 may be attached to the side of the mechanical structure layer 220 away from the substrate layer 210 by using a process such as evaporation, sputtering, or lift-off. The first bonding portion 261 may include, for example, a metal.

[0185] FIG. 21 is a flow chart of the assembly process of the mechanical structure layer 220 and the substrate layer 210 of the inertial sensor 20.

[0186] 710: Obtain the cover layer raw material 330.

[0187] The material type of the cover layer raw material 330 may be the same as the material type of the mechanical structural layer raw material 320, for example.

[0188] 711: Etch the cover layer raw material 330 on the side of the cover layer raw material 330 to form the cover layer 230.

[0189] For example, the cover layer 230 may include a second connecting end 236. A shallow trench is etched on the cover layer raw material 330 to form the second connecting end 236 in the cover layer 230.

[0190] 712: The second bonding portion 262 is placed on the etched side of the cover layer 230.

[0191] The second interface portion 262 can be attached to the cover layer 230 by using a process such as evaporation, sputtering, or lift-off. The second interface portion 262 can include, for example, a metal. In some embodiments, the material type of the first interface portion 261 shown in FIG. 7C can be the same as the material type of the second interface portion 262, for example.

[0192] FIG. 22 is a flowchart of the assembly process of the cover layer 230, the mechanical structure layer 220, the substrate layer 210 and the chip 21 of the inertial sensor 20. As shown in FIG.

[0193] 713: Connecting the first interface portion 261 to the second interface portion 262 through bonding forms a bonding connector 231 between the cover layer 230 and the mechanical structure layer 220, and the bonding connector 231 is in a sealed connection between the cover layer 230 and the mechanical structure layer 220.

[0194] The bonding method between the first bonding portion 261 and the second bonding portion 262 includes, but is not limited to, anodic bonding, eutectic bonding, etc. Since the mechanical structure layer 220 is in a sealed connection between the substrate layer 210 and the cover layer 230, the mover 222 in the mechanical structure layer 220 can move within a sealed cavity. This helps to prevent external contaminants from entering the cavity including the cover layer 230, the mechanical structure layer 220, and the substrate layer 210, and further helps to maintain the detection accuracy of the inertial sensor 20.

[0195] 714: The chip 21 is placed on the side of the substrate layer 210 away from the mechanical structure layer 220, and the port of the chip 21 is electrically connected to the second electrical connector 213 on the substrate layer 210.

[0196] The manner of electrical connection between the port of the chip 21 and the second electrical connector 213 in the substrate layer 210 may include, but is not limited to, solder balls, conductive fillers, conductive adhesives, or electrical connecting wires, etc.

[0197] An embodiment of the present application provides an inertial sensor, an electronic device, and a method for processing the inertial sensor. An insulating substrate material is used, which helps reduce the possibility of capacitance being generated by the substrate layer. Vias are disposed in the insulating substrate layer, resulting in improved flexibility of the electrical connection between the chip and the sensing component. For example, the chip and the sensing component can be electrically connected without or with little electrical connection wires. The connection stability of the electrical connection wires is weak, and the electrical connection wires occupy more space within the electronic device. The application of electrical connection wires in the inertial sensor is reduced, which helps improve the stability of the electrical connection between the chip and the sensing component and also helps reduce the space occupied by the inertial sensor within the electronic device.

[0198] The above description is merely a specific implementation of the present application and is not intended to limit the scope of protection of the present application. Any modifications or replacements that can be easily thought of by those skilled in the art within the technical scope disclosed in the present application shall be included in the scope of protection of the present application. Therefore, the scope of protection of the present application shall be subject to the scope of protection of the claims. 。 [Item 1] comprising a stacked substrate layer (210), a mechanical structure layer (220) and a cover layer (230), wherein the mechanical structure layer (220) is in a sealed connection between the substrate layer (210) and the cover layer (230); The substrate layer (210) has a substrate (211), wherein the substrate (211) is an insulator, and the mechanical structure layer (220) is in a hermetically sealed connection to the substrate (211) to form a hermetically sealed connection portion (215) between the mechanical structure layer (220) and the substrate (211), wherein the hermetically sealed connection portion (215) is an insulator; The substrate layer (210) further includes a first electrical connector (212), wherein the first electrical connector (212) is attached to a side of the substrate (211) that is closer to the mechanical structure layer (220), and the first electrical connector (212) includes an internal pin (242); and a first end surface of the internal pin (242) contacts the substrate (211), a second end surface of the internal pin (242) contacts the mechanical structure layer (220), a side surface of the internal pin (242) is connected between the first end surface and the second end surface, the side surface of the internal pin (242) contacts the sealed connection portion (215), and the internal pin (242) is electrically connected to the mechanical structure layer (220); Inertial sensor (20). [Item 2] Item 1, an inertial sensor (20) according to item 1, wherein the substrate (211) includes a substrate groove (2111), and the first electrical connector (212) is at least partially housed within the substrate groove (2111). [Item 3] The inertial sensor (20) described in item 1 or 2, wherein the substrate layer (210) further has a line protection layer (247), the line protection layer (247) is arranged on the side of the substrate (211) closer to the mechanical structure layer (220) and is located within a cavity formed through the sealed connection between the mechanical structure layer (220) and the substrate (211), and the line protection layer (247) wraps around a portion of the outer edge of the first electrical connector (212). [Item 4] An inertial sensor (20) according to any one of items 1 to 3, wherein the first electrical connector (212) includes a first conductive layer (2461) and a second conductive layer (2462), the first conductive layer (2461) including a first portion of a line of the first electrical connector (212), and the second conductive layer (2462) including a second portion of the line of the first electrical connector (212). [Item 5] The substrate layer (210) a second electrical connector (213) attached to the side of the substrate (211) remote from the first electrical connector (212); and a via (214) extending through the substrate (211) and electrically connected between the first electrical connector (212) and the second electrical connector (213); further comprising 5. The inertial sensor (20) according to any one of items 1 to 4. [Item 6] 6. The inertial sensor (20) according to item 5, wherein the second electrical connector (213) covers the via (214) and is in a sealed connection to the substrate (211). [Item 7] 7. The inertial sensor (20) according to item 5 or 6, wherein the first electrical connector (212) covers the via (214) and is in a sealed connection to the substrate (211). [Item 8] The inertial sensor (20) according to any one of items 5 to 7, further comprising a chip (21), the chip (21) being arranged on a side of the substrate layer (210) away from the mechanical structure layer (220). [Item 9] The chip (21) is disposed on the side of the cover layer (230) away from the mechanical structure layer (220), and the cover layer (230) is a cover substrate (232), wherein the cover substrate (232) is a conductor, the cover substrate (232) is in hermetically sealed connection to the mechanical structure layer (220), and the cover substrate (232) includes a first portion (2321) and a second portion (232a); an insulating portion (234), wherein the insulating portion (234) penetrates the cover substrate (232), and the first portion (2321) of the cover substrate (232) and the second portion (232a) of the cover substrate (232) are located on both sides of the insulating portion (234); and a third electrical connector (233), wherein the third electrical connector (233) is attached to a side of the cover substrate (232) closer to the chip (21), the third electrical connector (233) is electrically connected to a first portion of the mechanical structure layer (220) through the first portion (2321) of the cover substrate (232), and the third electrical connector (233) is electrically connected to the internal pin (242) through the second portion (232a) of the cover substrate (232) and a second portion of the mechanical structure layer (220); having 5. The inertial sensor (20) according to any one of items 1 to 4. [Item 10] Item 9. An inertial sensor (20) according to item 9, wherein the first portion (2321) of the cover substrate (232) and the mechanical structure layer (220) are connected by a mating connector (231), and the first portion (2321) of the cover substrate (232) further includes an overflow groove (235), the overflow groove (235) being located between the mating connector (231) and the insulating portion (234). [Item 11] The inertial sensor (20) according to item 9 or 10, further comprising the chip (21), wherein the chip (21) is disposed on the side of the cover layer (230) that is away from the mechanical structure layer (220). [Item 12] The resistivity of the substrate (211) is 10 9 12. The inertial sensor (20) of any one of items 1 to 11, having a capacitance greater than Ωm. [Item 13] 13. The inertial sensor (20) according to any one of items 1 to 12, wherein the material of the substrate (211) is glass and the material of the mechanical structure layer (220) is monocrystalline silicon or polycrystalline silicon. [Item 14] 14. An electronic device (100) comprising an inertial sensor (20) according to any one of items 1 to 13.

Claims

1. a substrate layer, a mechanical structure layer, and a cover layer stacked together, wherein the mechanical structure layer is hermetically connected between the substrate layer and the cover layer; the substrate layer has a substrate, wherein the substrate is an insulator, and the mechanical structure layer is hermetically connected to the substrate to form a hermetically connected portion between the mechanical structure layer and the substrate, the hermetically connected portion being an insulator; the substrate layer further includes a first electrical connector, wherein the first electrical connector is attached to a side of the substrate proximate the mechanical structure layer, and the first electrical connector includes an internal pin; and a first end surface of the internal pin contacts the substrate, a second end surface of the internal pin contacts the mechanical structure layer, a side surface of the internal pin is connected between the first end surface and the second end surface, the side surface of the internal pin contacts the hermetic connection portion, and the internal pin is electrically connected to the mechanical structure layer; the mechanical structure layer includes a stator fixed to the substrate layer and a mover that moves relative to the stator; Inertial sensors.

2. The inertial sensor according to claim 1 , wherein the cover layer includes a groove disposed opposite the mover in the mechanical structure layer.

3. 2. The inertial sensor of claim 1, wherein the first electrical connector has a detection electrode arranged opposite the mover in the mechanical structure layer, a capacitance value of a capacitance generated by the detection electrode and the mover indicates a motion status of the inertial sensor, and when motion occurs in the inertial sensor, a distance between the detection electrode and the mover is changed, resulting in a change in the capacitance value of the capacitance generated by the detection electrode and the mover.

4. The inertial sensor according to claim 3 , wherein when the movement occurs in the inertial sensor, the mover moves relative to the detection electrodes in a direction intersecting a direction in which the mover vibrates relative to the stator.

5. The inertial sensor of claim 1 , wherein the substrate layer and the mechanical structure layer are anodically bonded.

6. The inertial sensor of claim 1 , wherein the substrate includes a substrate groove, and the first electrical connector is at least partially housed within the substrate groove.

7. 7. The inertial sensor of claim 6, wherein the substrate layer further includes a line protection layer disposed on the side of the substrate closer to the mechanical structure layer and located within a cavity formed by the sealed connection between the mechanical structure layer and the substrate, the line protection layer wrapping around a portion of an outer edge of the first electrical connector.

8. 8. The inertial sensor of claim 7, wherein the first electrical connector includes a first conductive layer and a second conductive layer, the first conductive layer including first portions of lines of the first electrical connector, and the second conductive layer including second portions of the lines of the first electrical connector.

9. The substrate layer is a second electrical connector attached to the side of the substrate remote from the first electrical connector; and a via extending through the substrate and electrically connected between the first electrical connector and the second electrical connector; further comprising The inertial sensor according to claim 8 .

10. The inertial sensor of claim 9 , wherein the second electrical connector covers the via and is hermetically connected to the substrate.

11. The inertial sensor of claim 10 , wherein the first electrical connector covers the via and is hermetically connected to the substrate.

12. The inertial sensor of claim 11 , further comprising a chip, the chip being disposed on a side of the substrate layer away from the mechanical structure layer.

13. The chip is disposed on a side of the cover layer away from the mechanical structure layer, and the cover layer comprises: a cover substrate, wherein the cover substrate is a conductor, the cover substrate is hermetically connected to the mechanical structure layer, and the cover substrate includes a first portion and a second portion; an insulating portion, wherein the insulating portion penetrates the cover substrate, and the first portion of the cover substrate and the second portion of the cover substrate are located on opposite sides of the insulating portion; and a third electrical connector, wherein the third electrical connector is attached to a side of the cover substrate closer to the chip, the third electrical connector being electrically connected to a first portion of the mechanical structure layer through the first portion of the cover substrate, and the third electrical connector being electrically connected to the internal pin through the second portion of the cover substrate and a second portion of the mechanical structure layer; having The inertial sensor according to claim 1 .

14. a substrate layer, a mechanical structure layer, and a cover layer stacked together, wherein the mechanical structure layer is hermetically connected between the substrate layer and the cover layer; the substrate layer has a substrate, wherein the substrate is an insulator, and the mechanical structure layer is hermetically connected to the substrate to form a hermetically connected portion between the mechanical structure layer and the substrate, the hermetically connected portion being an insulator; the substrate layer further includes a first electrical connector, wherein the first electrical connector is attached to a side of the substrate proximate the mechanical structure layer, and the first electrical connector includes an internal pin; and a first end surface of the internal pin contacts the substrate, a second end surface of the internal pin contacts the mechanical structure layer, a side surface of the internal pin is connected between the first end surface and the second end surface, the side surface of the internal pin contacts the hermetic connection portion, and the internal pin is electrically connected to the mechanical structure layer; An inertial sensor, The chip is disposed on a side of the cover layer away from the mechanical structure layer, and the cover layer comprises: a cover substrate, wherein the cover substrate is a conductor, the cover substrate is hermetically connected to the mechanical structure layer, and the cover substrate includes a first portion and a second portion; an insulating portion, wherein the insulating portion penetrates the cover substrate, and the first portion of the cover substrate and the second portion of the cover substrate are located on opposite sides of the insulating portion; and a third electrical connector, wherein the third electrical connector is attached to a side of the cover substrate closer to the chip, the third electrical connector being electrically connected to a first portion of the mechanical structure layer through the first portion of the cover substrate, and the third electrical connector being electrically connected to the internal pin through the second portion of the cover substrate and a second portion of the mechanical structure layer; An inertial sensor having:

15. 14. The inertial sensor of claim 13, wherein the first portion of the cover substrate and the mechanical structure layer are connected by a mating connector, and the first portion of the cover substrate further includes an overflow groove, the overflow groove being located between the mating connector and the insulating portion.

16. The resistivity of the substrate is 10 ９ 16. The inertial sensor of claim 15, wherein the resistance is greater than Ωm.

17. 17. The inertial sensor according to claim 16, wherein the material of the substrate is glass, and the material of the mechanical structure layer is single crystal silicon or polycrystalline silicon.

18. An electronic device comprising an inertial sensor according to any one of claims 1 to 17.

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