Substrate processing apparatus and substrate processing method

Abstract

To provide a technique of evenly processing a substrate in the surface of the substrate.SOLUTION: A substrate processor includes a processing container and a substrate holding unit for rotating a substrate. The substrate processor includes: a first nozzle mechanism swingable in an inner space and discharging first processing gas to the substrate held by the substrate holding unit at the time of swinging; a second nozzle mechanism swingable in the inner space, separately from the first nozzle mechanism, and discharging second processing gas to the substrate held by the substrate holding unit at the time of swinging; and a control unit for controlling the substrate holding unit, the first nozzle mechanism, and the second nozzle mechanism. The control unit, during the substrate processing, causes the first nozzle mechanism and the second nozzle mechanism to swing independently of each other with the substrate holding unit rotating the substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Conventionally, there has been known a substrate processing apparatus that deposits a desired film on the surface of a plurality of wafers (substrates) held on a susceptor by supplying a plurality of types of process gases from above while the wafers are revolved. In recent years, with the miniaturization and high performance of semiconductor devices, there has been a demand for a substrate processing apparatus that deposits a thin film with excellent film thickness uniformity.

[0003] For example, Patent Document 1 discloses a substrate processing apparatus in which a gas supply unit is placed above each of two substrates arranged horizontally in a processing vessel, and each gas supply unit is rotated around an axis between the two substrates to spray gas onto each substrate to form a film. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2018-62703 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique that enables substrate processing to be performed uniformly across the surface of the substrate. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: a processing vessel having an internal space capable of accommodating the substrate; a substrate holding unit that holds the substrate in the internal space and rotates the substrate; a first nozzle mechanism that is swingably mounted in the internal space and that, when swinging, ejects a first process gas onto the substrate held by the substrate holding unit; a second nozzle mechanism that is swingably mounted separately from the first nozzle mechanism in the internal space and that, when swinging, ejects a second process gas onto the substrate held by the substrate holding unit; and a controller that controls the substrate holding unit, the first nozzle mechanism, and the second nozzle mechanism, wherein, during substrate processing, the controller swings the first nozzle mechanism and the second nozzle mechanism independently of each other while the substrate is rotated by the substrate holding unit. [Effects of the Invention]

[0007] According to one aspect, substrate processing can be performed uniformly across the surface of the substrate. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic plan view showing a substrate processing apparatus according to a first embodiment. [Figure 2] 2 is a schematic cross-sectional view taken along a diagonal line of a processing vessel in the substrate processing apparatus of FIG. 1. [Figure 3] Fig. 3(A) is a schematic cross-sectional view showing the tip side of the first nozzle mechanism, and Fig. 3(B) is a schematic plan view showing the ejection portion of the first head. [Figure 4] Fig. 4(A) is a schematic cross-sectional view showing the tip side of the second nozzle mechanism, and Fig. 4(B) is a schematic plan view showing the ejection portion of the second head. [Figure 5] 1 is a flowchart illustrating an example of a substrate processing method. [Figure 6] Fig. 6(A) is a first explanatory view showing the operation of the first nozzle mechanism and the second nozzle mechanism during substrate processing, and Fig. 6(B) is a second explanatory view showing the operation of the first nozzle mechanism and the second nozzle mechanism during substrate processing. [Figure 7] Figure 7(A) is a third explanatory view showing the operation of the first nozzle mechanism and the second nozzle mechanism during substrate processing. Figure 7(B) is a fourth explanatory view showing the operation of the first nozzle mechanism and the second nozzle mechanism during substrate processing. [Figure 8] Figure 8(A) is a fifth explanatory view showing the operation of the first nozzle mechanism and the second nozzle mechanism during substrate processing. Figure 8(B) is a sixth explanatory view showing the operation of the first nozzle mechanism and the second nozzle mechanism during substrate processing. [Figure 9] FIG. 3 is an explanatory diagram showing a first processing point area and a second processing point area during substrate processing. [Figure 10] 10 is an explanatory diagram showing the moving speeds of a first nozzle mechanism and a second nozzle mechanism in a substrate processing method according to a modified example. FIG. [Figure 11] FIG. 10 is a schematic plan view showing a substrate processing apparatus according to a second embodiment. [Figure 12] Fig. 12(A) is a schematic cross-sectional view showing the tip end side of the third nozzle mechanism, and Fig. 12(B) is a schematic plan view showing the ejection portion of the third head. [Figure 13] FIG. 10 is a schematic plan view showing a substrate processing apparatus in accordance with a third embodiment. [Figure 14] FIG. 10 is a schematic plan view showing a substrate processing apparatus in accordance with a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0010] [First embodiment] 1, the substrate processing apparatus 1 according to the first embodiment is configured as a single-wafer type substrate processing apparatus 1 that processes substrates W one by one. The substrate processing apparatus 1 performs film formation processing by atomic layer deposition (ALD) or molecular layer deposition (MLD).

[0011] The substrate W to be subjected to the film formation process may be a semiconductor wafer such as a silicon semiconductor, a compound semiconductor, or an oxide semiconductor. The substrate W may have a recess pattern such as a trench or a via. The substrate processing apparatus 1 of the present disclosure is not limited to a configuration that performs a film formation process as a substrate process, and may be applied to an apparatus that performs an etching process for etching a film on the substrate W, a cleaning process for removing deposits on the substrate W, etc.

[0012] The substrate processing apparatus 1 includes a processing vessel 10 that accommodates a substrate W, a substrate holding unit 20 that holds the substrate W in the processing vessel 10, a gas supply unit 30 that supplies gas from the outside to the inside of the processing vessel 10, a gas exhaust unit 40 that exhausts gas from the inside of the processing vessel 10 to the outside, and a nozzle mechanism unit 50 that discharges multiple types of processing gas onto the substrate W within the processing vessel 10. The substrate processing apparatus 1 also includes a control unit 90 that controls the operation of each component of the substrate processing apparatus 1.

[0013] The processing vessel 10 is a rectangular box-shaped vessel having an internal space IS capable of accommodating a substrate W. The size of the processing vessel 10 may be set according to the size of the substrate W to be processed. For example, when the diameter of the substrate W is 300 mm, the length of each side of the processing vessel 10 may be approximately 400 mm to 500 mm. Note that although FIG. 1 illustrates the processing vessel 10 as being rectangular in plan view, the processing vessel 10 may also be formed as being circular (i.e., cylindrical) in plan view.

[0014] A gate valve 13 capable of opening and closing the internal space IS is provided on an appropriate side of the processing vessel 10. Before a film formation process, the substrate processing apparatus 1 opens the gate valve 13 and loads the substrate W from outside the processing vessel 10 into the internal space IS using a separately provided transfer device 2. The substrate processing apparatus 1 then performs the film formation process with the gate valve 13 closed. After the film formation process, the substrate processing apparatus 1 opens the gate valve 13 and causes the transfer device 2 to enter the internal space IS again, thereby unloading the substrate W from the processing vessel 10. Note that although FIG. 1 illustrates the substrate processing apparatus 1 equipped with multiple (three) gate valves 13, it is sufficient that the processing vessel 10 is equipped with at least one gate valve 13.

[0015] 2, the processing vessel 10 has a lower concave vessel 11 with an open top and an upper concave vessel 12 with an open bottom that is placed over the lower concave vessel 11. The lower concave vessel 11 and the upper concave vessel 12 are fixed to each other so as to close their respective openings, thereby forming an internal space IS of the processing vessel 10. For ease of explanation, FIG. 1 shows the substrate processing apparatus 1 with the upper concave vessel 12 removed.

[0016] The lower concave container 11 has a bottom wall 111 formed in a substantially square shape in a plan view, and outer edge protrusions 112 that protrude vertically upward from the four outer edges of the bottom wall 111. The lower concave container 11 has a substrate holder 20 inside. A through-hole 111a is formed in the center of the bottom wall 111, through which a shaft 22 of the substrate holder 20 (described below) is inserted. A central region including the center of the bottom wall 111 forms a recessed portion 111b that is recessed downward relative to the adjacent annular region. In addition, a peripheral platform portion 111c that protrudes upward relative to the annular region is formed outside the annular region of the bottom wall 111 and between it and the outer edge protrusions 112.

[0017] A temperature adjustment unit 14 is installed in the recess 111b to adjust the temperature of the substrate W held by the substrate holder 20. The temperature adjustment unit 14 is not particularly limited and may be configured to use a heater such as an electric heating wire, or may be configured to circulate a temperature-adjusting medium whose temperature is adjusted by a heat exchanger or the like along an appropriate flow path. The temperature adjustment unit 14 is connected to the control unit 90 via a temperature adjustment driver or the like (not shown), and the temperature is adjusted under the control of the control unit 90.

[0018] On the other hand, the upper concave vessel 12 has a ceiling wall 121 formed in a substantially square shape (the same shape as the bottom wall 111) in a plan view, and side walls 122 that protrude vertically downward from the four outer edges of the ceiling wall 121. The processing vessel 10 is fixed with the lower end of the side wall 122 and the upper end of the outer edge protrusion 112 facing each other. A sealing member (not shown) is provided between the lower end of the side wall 122 and the upper end of the outer edge protrusion 112, thereby airtightly closing the internal space IS. The gate valve 13, for example, opens and closes a side opening 122a formed in the side wall 122 (see FIG. 1).

[0019] Furthermore, a substrate holding unit 20 provided in the processing vessel 10 rotatably holds the substrate W. The substrate holding unit 20 includes a susceptor 21 that directly holds the substrate W, a shaft unit 22 that supports the susceptor 21, and a substrate rotation unit 23 that is connected to the shaft unit 22 outside the processing vessel 10.

[0020] The susceptor 21 is formed in a circular shape that is slightly larger than the substrate W in a plan view, and has a mounting surface 21a that extends horizontally within the processing chamber 10. The mounting surface 21a has a periphery formed with an edge that is the same thickness as the mounted substrate W or that protrudes longer than the thickness of the substrate W. The substrate holder 20 also includes a plurality of lift pin elevating mechanisms (not shown) that receive and transfer the substrate W between the susceptor 21 and the transfer device 2. The susceptor 21 may be configured to fix the substrate W by an appropriate holding means (mechanical lock, suction, electrostatic chuck, etc.) when the substrate W is placed on the mounting surface 21a.

[0021] The shaft 22 is connected to the center of the susceptor 21 and extends along the axial direction (vertical direction) of the processing vessel 10. The shaft 22 is rotated about its axis by the substrate rotation unit 23, thereby rotating the susceptor 21. A magnetic fluid seal unit 24 is provided between the outer circumferential surface of the shaft 22 and the through-hole 111a in the bottom wall 111 of the processing vessel 10 to seal the shaft 22 so that it can rotate freely.

[0022] The substrate rotating unit 23 has a motor (not shown) and a drive transmission unit (not shown) that connects the rotation shaft of the motor and the shaft unit 22. The substrate rotating unit 23 is connected to the control unit 90 via a driver (not shown). The substrate rotating unit 23 rotates the shaft unit 22 at an appropriate rotation speed by supplying power to the motor that is adjusted by the driver based on a command from the control unit 90.

[0023] As shown in Figures 1 and 2, the gas supply unit 30 has multiple supply paths 31 that circulate gases such as processing gases (adsorption gases, reaction gases), purge gases, etc. outside the processing vessel 10, and supplies the gases into the processing vessel 10 through each supply path 31.

[0024] The processing gas supplied to the processing chamber 10 is selected appropriately depending on the type of film to be formed on the substrate W. For example, when forming a silicon oxide film (SiO2 film), a silicon-containing gas such as a silane-based gas can be used as the adsorption gas. Furthermore, an oxygen-containing gas such as oxygen (O2) gas or ozone (O3) gas can be used as the reaction gas. Furthermore, an inert gas such as nitrogen (N2) gas or argon (Ar) gas can be used as the purge gas.

[0025] The plurality of supply paths 31 include an adsorption gas supply path 31A for circulating an adsorption gas, a reaction gas supply path 31B for circulating a reaction gas, and a purge gas supply path 31C for circulating a purge gas. The purge gas supply path 31C is provided with a plurality of paths to supply the purge gas to the nozzle mechanism 50 and the processing vessel 10, respectively.

[0026] Each supply path 31 includes a plurality of tanks 32 for storing gas, a plurality of on-off valves 33 for opening and closing each supply path 31, and a plurality of flow rate regulators 34 for adjusting the flow rate of gas flowing through each supply path 31. The plurality of tanks 32 include an adsorption gas tank 32A for storing an adsorption gas, a reaction gas tank 32B for storing a reaction gas, and a purge gas tank 32C for storing a purge gas. Each on-off valve 33 and each flow rate regulator 34 are connected to a control unit 90. The control unit 90 opens the on-off valve 33 of each supply path 31 for a predetermined gas at an appropriate timing for substrate processing and adjusts the flow rate of the gas using the flow rate regulator 34, thereby supplying the predetermined gas to the processing vessel 10.

[0027] Meanwhile, the gas exhaust unit 40 has a plurality of exhaust paths 41 that allow gas (reacted gas, unreacted gas, purge gas, etc.) to flow outside the processing vessel 10, and exhausts the gas supplied into the processing vessel 10 through each exhaust path 41. In this embodiment, the plurality of exhaust paths 41 are divided into two systems according to the structure (first nozzle mechanism 60, second nozzle mechanism 70) of the nozzle mechanism unit 50 described below.

[0028] The first exhaust path 42 is connected to the first nozzle mechanism 60 and a position nearby it, and mainly exhausts gas discharged from the first nozzle mechanism 60. The first exhaust path 42 has branched exhaust paths 421 that branch into multiple (two) paths, and a confluence exhaust path 422 where the branched exhaust paths 421 join together and exhaust the gas collectively. One of the branched exhaust paths, 421A, is directly connected to the first nozzle mechanism 60 and exhausts gas from this first nozzle mechanism 60. A pressure adjustment valve 423A is provided in the branched exhaust path 421A to adjust the pressure of the gas sucked in by the first nozzle mechanism 60.

[0029] The other branch exhaust path 421B is connected to an annular region of the bottom wall 111 of the processing vessel 10, and exhausts gas from the internal space IS around the susceptor 21. An exhaust groove 15 is provided in the bottom wall 111, circumferentially extending in an annular manner on the side of the temperature adjustment unit 14 (see also FIG. 1). The branch exhaust path 421B is connected to the bottom of the exhaust groove 15. An exhaust network 16 is preferably provided at the upper opening of the exhaust groove 15 to uniform the conductance during gas exhaust in the circumferential direction.

[0030] A suction mechanism 424 (for example, a turbo molecular pump or a vacuum pump) is connected to the confluence exhaust path 422 in order to suck gas from the entire first exhaust path 42. Furthermore, the confluence exhaust path 422 is provided with a pressure adjustment valve 423B for adjusting the pressure of gas sucked in the entire first system.

[0031] The second exhaust path 43 is connected to the second nozzle mechanism 70 and a position nearby the second exhaust path 43, and mainly exhausts gas from the second nozzle mechanism 70. Similar to the first exhaust path 42, the second exhaust path 43 also has branch exhaust paths 431 branched into multiple (two) paths and a confluence exhaust path 432 where the branch exhaust paths 431 converge and collectively exhaust gas. One branch exhaust path 431A is connected to the second nozzle mechanism 70 and exhausts gas from the second nozzle mechanism 70. The branch exhaust path 431A is provided with a pressure adjustment valve 433A for adjusting the pressure of gas sucked by the second nozzle mechanism 70. The other branch exhaust path 431B is connected to an annular region (the bottom of the exhaust groove 15) of the bottom wall 111 of the processing vessel 10 and exhausts gas from the internal space IS around the susceptor 21.

[0032] The confluence exhaust path 432 is provided with a suction mechanism 434 (for example, a turbo molecular pump or a vacuum pump) to suck gas from the entire second exhaust path 43. Furthermore, the confluence exhaust path 432 is provided with a pressure adjustment valve 433B to adjust the pressure of gas sucked in the entire second system.

[0033] On the other hand, the nozzle mechanism 50 has the function of discharging a processing gas and a purge gas onto the upper surface (front surface) of the substrate W held on the susceptor 21 in the processing vessel 10, and also sucking in gas above the substrate W. The nozzle mechanism 50 includes a first nozzle mechanism 60 and a second nozzle mechanism 70 depending on the type of processing gas (adsorption gas, reaction gas) to be supplied to the substrate W. The substrate processing apparatus 1 swings each of the first nozzle mechanism 60 and the second nozzle mechanism 70 relative to the substrate holding unit 20 in the processing vessel 10. As a result, a first processing point region PR1 (see FIG. 3(A)) where gas is discharged and sucked by the first nozzle mechanism 60 and a second processing point region (see FIG. 4(A)) where gas is discharged and sucked by the second nozzle mechanism 70 move independently of each other.

[0034] The first nozzle mechanism 60 is installed at one of the four corners (the lower left corner in FIG. 1 ) of the processing vessel 10 (lower concave vessel 11). The first nozzle mechanism 60 has the function of discharging the adsorption gas and the purge gas while sucking the discharged gases. Specifically, the first nozzle mechanism 60 includes a first nozzle 61, a first nozzle operating unit 62 provided at the base end of the first nozzle 61, and a first head 63 provided at the protruding end (tip) of the first nozzle 61.

[0035] The first nozzle 61 is installed on the peripheral support portion 111c of the bottom wall 111 and extends parallel (horizontally) to the mounting surface 21a of the susceptor 21 at a position higher than the substrate W placed on the susceptor 21. The first nozzle 61 is formed to a length that enables it to extend from a first nozzle operating portion 62 inside the processing vessel 10 to the center of the processing vessel 10. The center of the processing vessel 10 coincides with the center of the susceptor 21 (substrate W), and the first nozzle 61 extends to the center of this susceptor 21. In other words, the extension length of the first nozzle 61 is set to be slightly shorter than half the diagonal of the processing vessel 10, but longer than the radius of the susceptor 21.

[0036] The first nozzle 61 is formed, for example, in the shape of a square tube having a rectangular cross section, and has a flow path 611 therein through which gas can flow. A plurality of pipes 612, 614 are provided at appropriate positions (for example, on the upper surface) on the outer circumferential surface of the first nozzle 61 within the processing vessel 10. The plurality of pipes 612, 614 extend parallel to the extension direction of the first nozzle 61 from the base end of the first nozzle 61 to the first head 63 of the first nozzle 61.

[0037] The pipe 612 has a flow path 612a extending along the axial direction therein, and its base end is connected to a connection pipe 613 provided in the processing vessel 10. The connection pipe 613 has appropriate flexibility so that the pipe 612 can move in accordance with the rotation of the first nozzle 61. The connection pipe 613 is connected to an adsorption gas supply path 31A provided outside the processing vessel 10 via a connector provided in the processing vessel 10. This allows the pipe 612 to distribute the adsorption gas from its base end to the first head 63 along the flow path 612a.

[0038] The pipe 614 has a flow path 614a therein extending along the axial direction, and its base end is connected to a connection pipe 615 provided in the processing vessel 10. The connection pipe 615 also has appropriate flexibility so that the pipe 614 can move in accordance with the rotation of the first nozzle 61. The connection pipe 615 is connected to a purge gas supply path 31C provided outside the processing vessel 10 via a connector provided in the processing vessel 10. This allows the pipe 614 to distribute the adsorption gas from its base end to the first head 63 along the flow path 614a.

[0039] The flow path 611 of the first nozzle 61 has a larger flow path cross-sectional area than the flow path 612a of the pipe 612 and the flow path 614a of the pipe 614. This flow path 611 circulates gas sucked in at the outer periphery of the first head 63, and discharges the gas to the branch discharge path 421A via the support shaft 621. The base end of the first nozzle 61 is connected to the support shaft 621 of the first nozzle operating unit 62. As the support shaft 621 operates, the first nozzle 61 swings (moves back and forth) the entire first nozzle 61 and the first head 63 in an arc shape, with the support shaft 621 as the base point.

[0040] The first nozzle operation unit 62 rotates the support shaft 621 while ensuring the flow of gas in the flow path 611 of the first nozzle 61. To this end, the first nozzle operation unit 62 is equipped with a cover 622, a magnetic fluid seal unit 623, and a drive main body 624 in addition to the support shaft 621.

[0041] The support shaft 621 is formed as a rigid circular tube extending vertically and having a flow path 621a therein. The first nozzle 61 extending horizontally is firmly fixed to the upper end of the support shaft 621 using an appropriate fixing member. The lower end of the support shaft 621 is connected to a branched exhaust path 421A outside the processing vessel 10 via a connector (not shown) provided in the processing vessel 10. This allows the first nozzle 61 to apply a suction force (negative pressure) to a first head 63 provided at the tip of the first nozzle 61 to suck gases in the order of the branched exhaust path 421A, the flow path 621a, and the flow path 611.

[0042] The magnetic fluid seal unit 623 hermetically seals the gap between the bottom wall 111 and the support shaft 621, thereby preventing gas from leaking from inside the processing vessel 10 via the first nozzle operating unit 62. The drive main body 624 includes a rotary motor and a drive transmission mechanism (not shown), and rotates the support shaft 621 over a set angle range based on the rotational drive of the rotary motor. As the support shaft 621 rotates, the first nozzle 61 swings around the base end connected to the support shaft 621. The drive main body 624 is connected to the control unit 90 via a drive driver (not shown), and the rotation speed, rotation direction, etc. of the rotary motor are controlled by the control unit 90.

[0043] The first nozzle operating unit 62 according to this embodiment is controlled to repeatedly rotate the support shaft 621 clockwise and counterclockwise over a range of approximately 90°. By the operation of this first nozzle operating unit 62, the first nozzle 61 swings between a first nozzle movement end N11 set near one side of the processing vessel 10 and a first nozzle movement other end N12 set near another side that is perpendicular to the one side of the processing vessel 10. The first nozzle movement end N11 and the first nozzle movement other end N12 are positioned at appropriate intervals from the susceptor 21 in the horizontal direction (positions that do not overlap with the susceptor 21 in the vertical direction).

[0044] 3(A) and 3(B), the first head 63 provided at the tip of the first nozzle 61 is formed in a rectangular shape in a plan view that is long in a direction perpendicular to the extension direction of the first nozzle 61. During substrate processing, the first head 63 discharges an adsorption gas onto the substrate W and also discharges a purge gas onto the substrate W around the adsorption gas, and further forms a first processing point region PR1 that sucks in gas outside the discharge areas of the adsorption gas and purge gas. The first head 63 moves back and forth along a first arc path in response to the swing of a first nozzle movement end N11 and a first nozzle movement other end N12 of the first nozzle 61, and faces the substrate W during this movement (see also FIG. 1).

[0045] In detail, the first head 63 has a rectangular head body 631 that is long in the tangential direction of the first arc path, and a protruding portion 632 that protrudes from the upper surface of the head body 631. The first nozzle 61 is directly connected to the head body 631, and the above-mentioned pipes 612 and 614 are connected to the protruding portion 632. The first head 63 has a processing gas discharge portion 633 that discharges the adsorption gas at the center of the head body 631 and the center of the protruding portion 632.

[0046] The processing gas discharge unit 633 is a portion surrounded by an inner wall extending across the head main body 631 and the protruding portion 632, and a bottom wall of the head main body 631 facing the substrate W. The processing gas discharge unit 633 has a discharge path 633a therein and a plurality of discharge holes 633b in the bottom wall that communicate with the discharge path 633a. The piping 612 is connected to the protruding portion 632 so that the discharge path 633a communicates with the flow path 612a. The processing gas discharge unit 633 may also have a heater 636 in the discharge path 633a that heats the adsorption gas supplied from the flow path 612a.

[0047] The discharge holes 633b of the processing gas discharge unit 633 are arranged in a matrix, and as a whole have a rectangular shape that is long in the tangential direction of the first arcuate path. As a result, the processing gas discharge unit 633 forms a rectangular adsorption gas discharge region PR11 at the center of the first processing point region PR1 (see also FIG. 9). In other words, the processing gas discharge unit 633 can spray the adsorption gas over an area that is sufficiently narrow relative to the entire area of ​​the substrate W during substrate processing.

[0048] Furthermore, the first head 63 has a purge gas discharge part 634 that discharges a purge gas around the processing gas discharge part 633. The purge gas discharge part 634 is a part surrounded by the space between the inner wall and outer wall of the protruding part 632, the space between the inner wall and the partition wall of the head main body 631, and the bottom wall. The purge gas discharge part 634 has a discharge path 634a therein and a plurality of discharge holes 634b in the bottom wall that communicate with the discharge path 634a. A pipe 614 is connected to the protruding part 632 so that the discharge path 634a communicates with the flow path 613a.

[0049] The discharge holes 634b of the purge gas discharge part 634, like the discharge holes 633b, are arranged in a matrix and form a square ring shape that surrounds the discharge holes 633b of the process gas discharge part 633. As a result, the purge gas discharge part 634 forms a square ring-shaped purge gas discharge region PR12 outside the discharge region of the adsorption gas (see also FIG. 9). The purge gas discharge part 634 can prevent the adsorption gas discharged by the process gas discharge part 633 from spreading outward due to the discharge of the purge gas during substrate processing.

[0050] The first head 63 also has a gas suction section 635 that sucks gas around the purge gas discharge section 634. The gas suction section 635 is a section surrounded by the partition wall and outer wall of the head main body 631. The gas suction section 635 has an internal suction path 635a and a series of openings 635b that communicate with the suction path 635a. The first nozzle 61 and the head main body 631 are connected so that the suction path 635a communicates with the flow path 611.

[0051] The opening 635b is formed in a rectangular ring shape around the outer periphery of the bottom wall of the head main body 631. That is, the gas suction part 635 forms a rectangular ring-shaped suction region PR13 outside the purge gas discharge region. This allows the gas suction part 635 to smoothly suck in the adsorption gas and purge gas discharged onto the substrate W around the purge gas during substrate processing.

[0052] 1 and 2, the second nozzle mechanism 70 is installed at one of the four corners of the processing vessel 10, diagonally opposite to the first nozzle mechanism 60 (the upper right corner in FIG. 1). The second nozzle mechanism 70 has the function of discharging a reaction gas and a purge gas while sucking the discharged gases. Specifically, the second nozzle mechanism 70 includes a second nozzle 71, a second nozzle operating unit 72 provided at the base end of the second nozzle 71, and a second head 73 provided at the protruding end (tip) of the second nozzle 71.

[0053] The second nozzle 71 is formed in basically the same shape as the first nozzle 61. That is, a flow path 711 is provided inside the second nozzle 71. Furthermore, a plurality of pipes 712 and 714 are provided at appropriate positions (e.g., on the upper surface) of the outer circumferential surface of the second nozzle 71. The pipe 712 has a flow path 712a therein, and its base end is connected to a connecting pipe 713 provided in the processing vessel 10. The connecting pipe 713 is connected to a reaction gas supply path 31B provided outside the processing vessel 10. The pipe 714 has a flow path 714a therein, and its base end is connected to a connecting pipe 715 provided in the processing vessel 10. The connecting pipe 715 is connected to a purge gas supply path 31C provided outside the processing vessel 10.

[0054] The second nozzle operation unit 72 is also formed in the same manner as the first nozzle operation unit 62. That is, the second nozzle operation unit 72 includes a support shaft 721, a cover 722, a magnetic fluid seal unit (not shown), and a drive body 724. The support shaft 721 is formed as a hard circular tube having a flow path 721a therein. The support shaft 721 supports the second nozzle 71 at its upper end and is connected at its lower end to a branch discharge path 431A provided outside the processing vessel 10. The drive body 724 includes a rotary motor and a drive transmission mechanism (not shown), and rotates the support shaft 721 over a set angle range based on the rotational drive of the rotary motor. The drive body 724 is connected to a control unit 90 via a drive driver (not shown), and the rotation speed, rotation direction, etc. of the rotary motor are controlled by the control unit 90.

[0055] The second nozzle operation unit 72 is also controlled so that the support shaft 721 repeatedly rotates clockwise and counterclockwise over a range of approximately 90°. Therefore, the second nozzle 71 swings between a second nozzle movement end N21 set near one side of the processing vessel 10 and a second nozzle movement end N22 set near another side that is perpendicular to the one side of the processing vessel 10, by the operation of the second nozzle operation unit 72. The second nozzle movement end N21 and the second nozzle movement end N22 are located at appropriate intervals in the horizontal direction from the susceptor 21 (positions that do not overlap with the susceptor 21 in the vertical direction).

[0056] 4(A) and 4(B), the second head 73 is basically formed in the same manner as the first head 63. During substrate processing, the second head 73 discharges a reactive gas onto the substrate W and also discharges a purge gas onto the substrate W around the reactive gas, and further forms a second processing point region PR2 that sucks in gas outside the discharge areas of the reactive gas and purge gas. The second head 73 moves back and forth along a second arc path in accordance with the swing of the second nozzle movement one end N21 and the second nozzle movement other end N22 of the second nozzle 71, and faces the substrate W during this movement.

[0057] More specifically, the second head 73 has a rectangular head body 731 that is long in the tangential direction of the second arc path, and a protruding portion 732 that protrudes from the top surface of the head body 731, and the pipes 712 and 714 are connected to the protruding portion 732. The second head 73 has a process gas discharge portion 733 that discharges a reactive gas at the center of the head body 731 and the center of the protruding portion 732.

[0058] The process gas discharge unit 733 is surrounded by an inner wall extending across the head main body 731 and the protruding portion 732 and a bottom wall of the head main body 731 facing the substrate W. The process gas discharge unit 733 has a discharge path 733a therein and a discharge port 733b communicating with the discharge path 733a. The piping 712 is connected to the protruding portion 732 so that the discharge path 733a communicates with the flow path 712a. In this embodiment, the discharge port 733b has a shape that communicates continuously in the longitudinal direction. However, the second head 73 is not limited to this discharge port 733b and may have a configuration including multiple discharge holes similar to the first head 63. The process gas discharge unit 733 may also have a heater 736 in the discharge path 733a that heats the reactive gas supplied from the flow path 712a.

[0059] Furthermore, the process gas discharge unit 733 may discharge the reactive gas as is (or after heating) or may convert the reactive gas into plasma and discharge it, depending on the requirements of the substrate processing. The process gas discharge unit 733's configuration for converting the reactive gas into plasma and discharging it will be specifically described below. The process gas discharge unit 733 has a plasma antenna 737 that revolves around the outer circumferential surface of the inner wall of the protrusion 732. The antenna 737 is connected to a high-frequency power supply unit (not shown) provided outside the processing vessel 10 via wiring (not shown). The wiring extends, for example, along the outer circumferential surface of the second nozzle 71. Therefore, during substrate processing, high-frequency power is supplied from the high-frequency power supply unit to the antenna 737 via the wiring, generating plasma in the reactive gas flowing through the discharge path 733a.

[0060] When the reactive gas is turned into plasma, a mixed gas containing, for example, O2, H2, NH3, Ar, N2, etc. may be used as the reactive gas. To form a high-quality oxide film, a purge gas containing O3 may be supplied as a purge gas for plasma generation. This allows the processing gas discharge unit 733 to form a plasma-converted reactive gas discharge region PR21 at the center of the second processing point region PR2 when discharging the reactive gas (see also FIG. 9).

[0061] Furthermore, the second head 73 has a purge gas discharge part 734 that discharges a purge gas around the process gas discharge part 733. The purge gas discharge part 734 can have a configuration similar to that of the purge gas discharge part 634 of the first head 63, and has a discharge path 734a and a plurality of discharge holes 734b, forming a purge gas discharge region PR22. The second head 73 also has a gas suction part 735 that sucks gas around the purge gas discharge part 734. The gas suction part 735 can also have a configuration similar to that of the gas suction part 735 of the first head 63, and has a suction path 735a and an opening 735b, forming a gas suction region PR23.

[0062] 2, the substrate processing apparatus 1 further includes a mechanism for supplying a purge gas from the upper portion (above the nozzle mechanism 50) of the processing vessel 10 to the lower internal space IS. For example, the ceiling wall 121 of the upper concave vessel 12 includes a gas inlet port 17 for introducing the purge gas, and the gas inlet port 17 is connected to a purge gas tank 32C that stores the purge gas via a purge gas supply path 31C having an open / close valve 33 and a flow rate regulator 34.

[0063] A shower head 18 may be provided in the upper concave vessel 12 to horizontally diffuse the purge gas introduced from the gas introduction port 17. The shower head 18 is formed in a flat plate shape having a plurality of gas holes 18a, and uniformly discharges the purge gas supplied to the space between the shower head 18 and the ceiling wall 121 into the space below the shower head 18 (the space where the substrate W and the nozzle mechanism unit 50 are located).

[0064] 1, a computer having a processor 91, a memory 92, an input / output interface (not shown), etc. can be used as the control unit 90 that controls the substrate processing apparatus 1. The processor 91 is one or a combination of a central processing unit (CPU), a graphics processing unit (GPU), an application specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a circuit made up of a plurality of discrete semiconductors, etc. The memory 92 is an appropriate combination of a volatile memory and a non-volatile memory (e.g., a compact disc, a digital versatile disc (DVD), a hard disk, a flash memory, etc.).

[0065] The memory 92 stores a program for operating the substrate processing apparatus 1 and a recipe for substrate processing conditions and the like. The processor 91 reads and executes the program from the memory 92 to control each component of the substrate processing apparatus 1. The control unit 90 may be configured by a host computer or multiple client computers that communicate with each other via a network.

[0066] The substrate processing apparatus 1 according to the first embodiment is basically configured as described above, and a substrate processing method using this substrate processing apparatus 1 will be described below.

[0067] The control unit 90 controls each component of the substrate processing apparatus 1 to perform a film forming process, which is a substrate process, on the substrate W held by the substrate holding unit 20. At this time, the control unit 90 operates (swings) the first nozzle 61 and the second nozzle 71 independently of each other while the substrate W is rotated by the substrate holding unit 20.

[0068] Specifically, after placing the substrate W on the susceptor 21 of the substrate holder 20, the control unit 90 closes the gate valve 13 to start substrate processing. As shown in FIG. 5, the control unit 90 first operates the gas supply unit 30 and the gas exhaust unit 40 to supply a purge gas from the upper part of the processing vessel 10 while exhausting the internal gas, thereby adjusting the internal pressure of the processing vessel 10 to a set target pressure (step S1). The internal pressure of the processing vessel 10 can be set appropriately depending on the type of substrate processing, and can be set in the range of 1 Torr to 10 Torr, for example. Continuous supply of purge gas from the entire upper part of the processing vessel 10 prevents the processing gas from moving to the space above the nozzle mechanism unit 50 when the processing gas is subsequently discharged.

[0069] The control unit 90 also operates the temperature adjustment unit 14 in the processing chamber 10 to adjust the temperature of the substrate W placed on the susceptor 21 (step S2). The temperature of the substrate W can also be set appropriately depending on the type of substrate processing, and can be set in the range of, for example, around 100°C to 800°C.

[0070] Furthermore, the control unit 90 operates the substrate rotation unit 23 of the substrate holding unit 20 to rotate the susceptor 21 at an appropriate speed (step S3). For example, the control unit 90 rotates the susceptor 21 at a rotation speed in the range of 10 rpm to 1000 rpm. As a result, the substrate W placed on the susceptor 21 also rotates (spins) around its center.

[0071] Then, when the rotation speed of the substrate W, the temperature of the substrate W, etc. have stabilized, the control unit 90 starts the operation of the first nozzle mechanism 60 and the second nozzle mechanism 70 (step S4). That is, the control unit 90 controls the operation of the first nozzle operation unit 62 to swing the first nozzle 61, and controls the operation of the second nozzle operation unit 72 to swing the second nozzle 71.

[0072] As described above, the first head 63 moves back and forth along a first arcuate path based on the swing of the first nozzle 61. The second head 73 moves back and forth along a second arcuate path based on the swing of the second nozzle. The first arcuate path and the second arcuate path intersect at the center of the susceptor 21 (substrate W). For example, the control unit 90 controls the swing speed of the first nozzle 61 and the swing speed of the second nozzle 71 to be the same, while shifting the timing at which the first nozzle 61 starts swinging from the timing at which the second nozzle 71 starts swinging. This makes it possible to avoid interference between the first head 63 and the second head 73.

[0073] 6(A), the control unit 90 starts the forward movement of the first nozzle 61 from one end N11 of the first nozzle movement, and then starts the forward movement of the second nozzle 71 from one end N21 of the second nozzle movement at a timing when a start delay period has elapsed from this start timing. As a result, as shown in FIG. 6(B), the first head 63 reaches above the center of the substrate W first and passes through the center of the substrate W. Thereafter, the second head 73 reaches above the center of the substrate W and passes through the center of the substrate W.

[0074] 7(A), the first nozzle 61 reaches the other end N12 of the first nozzle movement first, and starts moving back from the other end N12 of the first nozzle movement to the one end N11 of the first nozzle movement. On the other hand, as shown in FIG. 7(B), the second nozzle 71 reaches the other end N22 of the second nozzle movement after the first head 63 arrives, and starts moving back from the other end N22 of the second nozzle movement to the one end N21 of the second nozzle movement at a later timing than the first nozzle 61. When the first nozzle 61 moves back, the second nozzle 71 has already passed near the center of the substrate W, so contact between the first nozzle 61 and the second nozzle 71 can be eliminated.

[0075] 8(A), the first head 63 reaches above the center of the substrate W first, passes through the center of the substrate W, and reaches the first nozzle movement end N11. As shown in FIG. 8(B), the second head 73 reaches above the center of the substrate W after the first head 63, passes through the center of the substrate W, and reaches the second nozzle movement end N21.

[0076] Through the above operations, the substrate processing apparatus 1 can stably repeat the reciprocating movement of the first head 63 and the reciprocating movement of the second head 73. Note that the operations of the first nozzle 61 and the second nozzle 71 are not limited to those described above. For example, the substrate processing apparatus 1 may be configured to alternately operate the first nozzle 61 and the second nozzle 71. As an example, the control unit 90 may be configured to move the first nozzle 61 forward while keeping the second nozzle 71 in a standby state, and then move the second nozzle 71 forward while keeping the first nozzle 61 in a standby state. In this case, after the second nozzle 71 moves forward, the control unit 90 may move the first nozzle 61 back while keeping the second nozzle 71 in a standby state, and then move the second nozzle 71 back while keeping the first nozzle 61 in a standby state.

[0077] 5, the control unit 90 operates the gas supply unit 30 and the gas exhaust unit 40 in conjunction with the operation of the nozzle mechanism unit 50, thereby starting the supply of processing gases (adsorption gas, reaction gas) using the nozzle mechanism unit 50 and the suction of gases (step S5). The operation timing of the nozzle mechanism unit 50 is not particularly limited, and may be before or after the reciprocating movement of the first nozzle 61 and the second nozzle 71.

[0078] As shown in FIG. 9, the substrate processing apparatus 1 moves the first processing point region PR1 along the first arcuate orbit of the first head 63 and moves the second processing point region PR2 along the second arcuate orbit of the second head 73. The first head 63 adsorbs the adsorption gas to a first range Wr1 (the range of the processing gas discharge portion 633) in the radial direction of the substrate W while changing the radial position of the first processing point region PR1 of the rotating substrate W. The first head 63 passes through approximately the radius of the substrate W twice while moving from one end N11 of the first nozzle movement to the other end N12 of the first nozzle movement. The movement speed of the first head 63 is set to a speed at which the radial position of the substrate W passes through the adsorption gas discharge region PR11 at least one to ten times during the rotation of the substrate W. This allows the entire surface of the substrate W to face the adsorption gas discharge region PR11 at least once, allowing the adsorption gas to be adsorbed.

[0079] Furthermore, the first head 63 forms a purge gas discharge region PR12 around the adsorption gas discharge region PR11, thereby suppressing the spread of the adsorption gas and easily controlling the adsorption gas discharge region PR11. The first head 63 then sucks the gas in a suction region PR13 outside the purge gas discharge region PR12, thereby reducing the amount of adsorption gas remaining near the top surface of the substrate W and suppressing the adsorption gas from adhering to locations on the substrate W other than the first processing point region PR1.

[0080] Meanwhile, the second head 73 discharges plasmatized reactive gas onto a second range Wr2 (range of the processing gas discharge portion 733) on the radial direction of the substrate W while changing the radial position of the second processing point region PR2 of the rotating substrate W. The second head 73 also passes through approximately the radius of the substrate W twice while moving from one end N21 of the second nozzle movement to the other end N22 of the second nozzle movement. The movement speed of the second head 73 is set to be the same as the movement speed of the first head 63. As a result, the entire surface of the substrate W faces the reactive gas discharge region PR21 at least once, allowing the reactive gas and adsorbed gas to react with each other.

[0081] Furthermore, the second head 73 forms a purge gas discharge region PR22 around the reactive gas discharge region PR21, thereby suppressing the spread of the reactive gas. The second head 73 then sucks the gas in a suction region PR23 outside the purge gas discharge region PR22, thereby reducing the amount of reactive gas remaining near the upper surface of the substrate W and suppressing the reactive gas from reacting in areas other than the second processing region PR2 of the substrate W.

[0082] 5, in the substrate processing method, the end of substrate processing is determined in step S6. The control unit 90 monitors, for example, a target time set in a recipe or the like (or a processing time set according to a target film thickness or the like) and an actual operation time of the nozzle mechanism unit 50, and determines the end of substrate processing when the actual operation time reaches the target time.

[0083] By using the substrate processing method described above, the substrate processing apparatus 1 according to the first embodiment can form a desired film on the upper surface of the substrate W at low cost and with high precision. Specifically, the nozzle mechanism 50 independently moves the first processing point region PR1 containing the adsorption gas and the second processing point region PR2 containing the reaction gas, thereby performing film formation processing on the rotating substrate W at the first processing point region PR1 and the second processing point region PR2. This allows the substrate processing apparatus 1 to accurately adjust the substrate processing range and easily achieve a uniform film thickness distribution on the substrate W. Furthermore, the substrate processing apparatus 1 no longer supplies a large amount of processing gas from a fixed nozzle, and instead supplies the processing gas to the desired position on the substrate W using the moving first nozzle 61 and second nozzle 71. As a result, the substrate processing apparatus 1 reduces the overall supply amount of processing gas, significantly reducing costs.

[0084] The substrate processing apparatus 1 and the substrate processing method are not limited to the above configuration and may take various modifications. For example, the substrate processing apparatus 1 may be configured to include multiple first nozzle mechanisms 60 for one substrate W, and to discharge an adsorption gas onto the substrate W from multiple locations. Similarly, the substrate processing apparatus 1 may be configured to include multiple second nozzle mechanisms 70 for one substrate W, and to discharge a reaction gas onto the substrate W from multiple locations. That is, the first process gas and the second process gas supplied into the processing vessel 10 may be the same type of process gas. Even when multiple identical nozzle mechanisms are provided to supply the same type of process gas, the substrate processing apparatus 1 can consider these nozzle mechanisms as the first nozzle mechanism 60 and the second nozzle mechanism 70.

[0085] Furthermore, the swing angle of the first nozzle 61 and the second nozzle 71 is not limited to approximately 90°, and as long as they are set to move back and forth at least between the outer edge of the substrate W and the center of the substrate W, the processing gas can be discharged onto the entire surface of the substrate W. Therefore, the swing angle of the first nozzle 61 and the second nozzle 71 may be approximately 45°, or can be an angle smaller than 45° if the substrate W is far away from the base end of each nozzle.

[0086] The substrate processing apparatus 1 described above discharges processing gas and purge gas and sucks gas while smoothly and continuously moving the first nozzle 61 and the second nozzle 71 over the substrate W. However, the substrate processing apparatus 1 may swing the first nozzle 61 and the second nozzle 71 stepwise (intermittently) above the substrate W. For example, the first nozzle operating unit 62 intermittently moves the first nozzle 61 in the radial direction from the outer edge to the center of the substrate W and keeps the first nozzle 61 waiting above the substrate W for a set period (while the substrate W makes multiple revolutions). This allows the first nozzle 61 to sufficiently adsorb the adsorption gas over the entire radial range of the substrate W. After the set period has elapsed, the first nozzle operating unit 62 moves the first nozzle 61 to an adjacent position on the first arcuate orbit and keeps it waiting for the set period again. It goes without saying that the second nozzle operating unit 72 can also operate in the same manner as the first nozzle operating unit 62.

[0087] 10, the substrate processing apparatus 1 may change the movement speed of the first processing point region PR1 (first nozzle 61) and the second processing point region PR2 (second nozzle 71) while they are moving on the substrate W. That is, the upper surface of the substrate W on which substrate processing is performed has a larger surface area on the outer edge side and a smaller surface area on the center side. By changing the swing speed of the first nozzle 61 and the swing speed of the second nozzle 71 according to the surface area of ​​the upper surface of the substrate W, it is possible to make the time during which the first processing point region PR1 and the second processing point region PR2 face each other uniform in the radial direction of the substrate W.

[0088] Specifically, the substrate processing apparatus 1 sets the swing speed of the first processing point region PR1 and the swing speed of the second processing point region PR2 to a slower speed near the outer edge of the substrate W and a faster speed near the center of the substrate W. Note that Fig. 10 shows an example in which the upper surface of the substrate W is divided into three regions, a low-speed region, a medium-speed region, and a high-speed region, and the speed is changed as the center of the first head 63 or the center of the second head 73 crosses the boundary of each region. However, the movement speed of the first processing point region PR1 and the movement speed of the second processing point region PR2 are not limited to being changed in stages, and may be changed gradually (smoothly) along with the radial movement of the substrate W.

[0089] In this way, by changing the movement speed of the first processing point area PR1 and the movement speed of the second processing point area PR2, the substrate processing apparatus 1 can make the first processing point area PR1 and the second processing point area PR2 uniformly face the rotating substrate W. Therefore, when forming a film on the substrate W, the substrate processing apparatus 1 can further promote uniformity of the film formed on the surface of the substrate W.

[0090] Furthermore, when the first nozzle 61 and the second nozzle 71 are moved intermittently, the substrate processing apparatus 1 can uniformize the time that the first head 63 and the second head 73 face the substrate W by changing the set standby period in the radial direction of the substrate W. For example, the substrate processing apparatus 1 causes the first nozzle 61 and the second nozzle 71 to wait for a long set period when they are located on the outer edge side of the substrate W. On the other hand, the substrate processing apparatus 1 causes the first nozzle 61 and the second nozzle 71 to wait for a short set period when they are located on the center side of the substrate W. This allows the substrate processing apparatus 1 to form first processing point regions PR1 and second processing point regions PR2 on the surface of the substrate W, thereby achieving uniform substrate processing.

[0091] Second Embodiment 11, a nozzle mechanism section 50A of the substrate processing apparatus 1A according to the second embodiment differs from the substrate processing apparatus 1 according to the first embodiment in that it includes a third nozzle mechanism 80 in addition to a first nozzle mechanism 60 and a second nozzle mechanism 70. For example, the third nozzle mechanism 80 is configured to perform an etching process or a cleaning process on a substrate W. Note that the first nozzle mechanism 60 and the second nozzle mechanism 70 are configured to eject an adsorption gas and a reaction gas (including a plasmatized reaction gas), similar to the first embodiment.

[0092] The third nozzle mechanism 80 is installed at one of the four corners of the processing vessel 10 (the lower right corner in FIG. 11 ), which is different from the corners at which the first nozzle mechanism 60 and the second nozzle mechanism 70 are installed. The third nozzle mechanism 80 has the function of discharging etching gas and purge gas while sucking the discharged gases. Specifically, the third nozzle mechanism 80 includes a third nozzle 81, a third nozzle operating unit 82 provided at the base end of the third nozzle 81, and a third head 83 provided at the protruding end (tip) of the third nozzle 81.

[0093] The third nozzle 81 is formed in basically the same shape as the first nozzle 61. That is, a flow path 811 is provided inside the third nozzle 81. Furthermore, a plurality of pipes 812, 814 are provided at appropriate positions on the outer circumferential surface of the third nozzle 81 (for example, on the upper surface).

[0094] The pipe 812 has a flow path 812a therein, and a base end thereof is connected to a connection pipe 813 provided in the processing vessel 10. The connection pipe 813 is connected to an etching gas supply path 31D provided outside the processing vessel 10. Thus, the gas supply unit 30 supplies an etching gas from an etching tank 32D outside the processing vessel 10 through the etching gas supply path 31D.

[0095] On the other hand, the pipe 814 has a flow path 814a therein, and a base end thereof is connected to a connection pipe 815 provided in the processing vessel 10. The connection pipe 815 is connected to a purge gas supply path 31C provided outside the processing vessel 10.

[0096] The third nozzle operation unit 82 is also formed in the same manner as the first nozzle operation unit 62. That is, the third nozzle operation unit 82 includes a support shaft 821, a cover (not shown), a magnetic fluid seal unit (not shown), and a drive body 824. The support shaft 821 is formed as a hard circular tube having a flow path 821a therein. The support shaft 821 supports the third nozzle 81 at its upper end, and is connected at its lower end to a branch discharge path 431A provided outside the processing vessel 10. The drive body 824 includes a rotation motor and a drive transmission mechanism (not shown), and rotates the support shaft 821 over a set angle range based on the rotation drive of the rotation motor. The drive body 824 is connected to a control unit 90 via a drive driver (not shown), and the rotation speed, rotation direction, etc. of the rotation motor are controlled by the control unit 90.

[0097] The third nozzle operating unit 82 is also controlled so that the support shaft 821 repeatedly rotates clockwise and counterclockwise over a range of approximately 90°. Therefore, the third nozzle 81 is swung by the third nozzle operating unit 82 between a third nozzle movement end N31 set near one side of the processing vessel 10 and a third nozzle movement end N32 set near another side that is perpendicular to the one side of the processing vessel 10. The third nozzle movement end N31 and the third nozzle movement end N32 are positioned at an appropriate interval from the susceptor 21 in the horizontal direction (positions that do not overlap with the susceptor 21 in the vertical direction).

[0098] 12(A) and 12(B), the third head 83 is formed basically in the same manner as the second head 73. During substrate processing, the third head 83 discharges etching gas onto the substrate W and discharges purge gas onto the substrate W around the etching gas, and further forms a third processing point region PR3 that sucks in gas outside the discharge areas of the etching gas and purge gas. The third head 83 moves back and forth along a third arc path in accordance with the swing of the third nozzle movement one end N31 and the third nozzle movement other end N32 of the third nozzle 81, and faces the substrate W during this movement.

[0099] More specifically, the third head 83 has a rectangular head body 831 that is long in the tangential direction of the third arc path, and a protruding portion 832 that protrudes from the top surface of the head body 831, and the pipes 812 and 814 are connected to the protruding portion 832. The third head 83 has a processing gas discharge portion 833 that discharges etching gas at the center of the head body 831 and the center of the protruding portion 832.

[0100] The processing gas discharge unit 833 is a portion surrounded by an inner wall extending across the head main body 831 and the protruding portion 832, and a bottom wall of the head main body 831 facing the substrate W. The processing gas discharge unit 833 has a discharge path 833a therein and a discharge port 833b communicating with the discharge path 833a. The piping 812 is connected to the protruding portion 832 so that the discharge path 833a communicates with the flow path 812a. The processing gas discharge unit 833 may include a heater 836 in the discharge path 833a for heating the reactive gas supplied from the flow path 812a.

[0101] The processing gas discharge unit 833 converts the etching gas into plasma and discharges it. The processing gas discharge unit 833 has a plasma antenna 837 that revolves around the outer circumferential surface of the inner wall of the protrusion 832. During substrate processing, high-frequency power is supplied to the antenna 837 from a high-frequency power supply unit via wiring (not shown), causing the etching gas flowing through the discharge path 833a to generate plasma. Note that the processing gas discharge unit 833 is not limited to a configuration that converts the etching gas into plasma, and may be a unit that only includes a configuration (heater 836) that heats the etching gas, for example, as long as the etching gas is activated by heat.

[0102] When the etching gas is turned into plasma, a mixed gas of, for example, F2, NF3, Cl2, CF4, CHF3, Ar, N2, etc. can be used as the etching gas. This allows the processing gas discharge part 833 to form a discharge region PR31 of the plasmatized etching gas at the center of the third processing point region PR3 when discharging the etching gas.

[0103] Furthermore, the third head 83 includes a purge gas discharge unit 834 that discharges a purge gas around the processing gas discharge unit 833. The purge gas discharge unit 834 can have a configuration similar to that of the purge gas discharge unit 634 of the first head 63, and includes a discharge path 834a and a plurality of discharge holes 834b, forming a purge gas discharge region PR32 around the etching gas discharge region PR31. The third head 83 also includes a gas suction unit 835 that sucks gas around the purge gas discharge unit 834. The gas suction unit 835 can also have a configuration similar to that of the gas suction unit 735 of the first head 63, and includes a suction path 835a and an opening 835b, forming a gas suction region PR33 around the purge gas discharge region PR32.

[0104] The substrate processing apparatus 1A according to the second embodiment is basically configured as described above. In the substrate processing method, the control unit 90 operates (swings) the first nozzle 61, the second nozzle 71, and the third nozzle 81 independently of one another while the substrate W is rotated by the substrate holder 20. During substrate processing, the control unit 90 staggers the operations of the first nozzle 61, the second nozzle 71, and the third nozzle 81 to avoid interference between the first head 63, the second head 73, and the third head 83.

[0105] For example, the control unit 90 can be configured to perform an etching process by operating the third nozzle mechanism 80 after forming a desired film on the upper surface of the substrate W using the first nozzle mechanism 60 and the second nozzle mechanism 70. The third head 83 of the third nozzle mechanism 80 can spray plasma-converted etching gas while smoothly sucking in the discharged etching gas while changing its radial position on the rotating substrate W. This allows the third nozzle mechanism 80 to immediately discharge the etching gas remaining near the upper surface of the substrate W and the etched material, thereby suppressing the generation of deposits on the substrate W. Furthermore, the third head 83 can suppress the spread of the etching gas by discharging the etching gas at the center of the third processing point region PR3 and discharging the purge gas around the etching gas, thereby easily controlling the discharge region PR31 of the etching gas.

[0106] Of course, the third nozzle mechanism 80 that performs the etching process may also adjust the swing speed as appropriate in accordance with the rotation speed of the substrate W (see also FIG. 10). Furthermore, the control unit 90 can also make adjustments such as slowing down the swing speed to perform more etching at concentrically arranged portions of the substrate W that require a larger amount of etching. The substrate processing apparatus 1A can perform the etching process uniformly or etch only necessary portions, thereby reducing over-etching and contributing to more efficient processing.

[0107] Furthermore, when etching the substrate W, the substrate processing apparatus 1A may be configured to include multiple third nozzle mechanisms 80 in the processing vessel 10, without including the first nozzle mechanism 60 and the second nozzle mechanism 70. Even in this case, the etching process on the substrate W can be performed more efficiently by swinging each third nozzle mechanism 80 independently of one another.

[0108] Furthermore, the substrate processing apparatus 1 is not limited to a single-wafer processing apparatus that processes one substrate W in the processing vessel 10, but may be configured to perform substrate processing on multiple substrates W as shown in FIGS. 13 and 14 . For example, a substrate processing apparatus 1B according to a third embodiment shown in FIG. 13 includes a processing vessel 10A that accommodates two substrates W and performs substrate processing. In this case, the nozzle mechanism unit 51 provided in the processing vessel 10A may include two first nozzle mechanisms 60 and one second nozzle mechanism 70. Each first nozzle mechanism 60 is installed at an appropriate corner of the processing vessel 10A and configured to reciprocate within a range of approximately 90° corresponding to each substrate W. Meanwhile, the second nozzle mechanism 70 is disposed between the two substrate holders 20 of the processing vessel 10A and configured to perform substrate processing on both of the two substrates W. That is, the second nozzle mechanism 70 is configured to reciprocate within a range of approximately 180°.

[0109] The substrate processing apparatus 1B may also include a third nozzle mechanism 80 for performing etching and cleaning processes. For example, the substrate processing apparatus 1B may be configured such that the third nozzle mechanism 80 is installed on the opposite side of the second nozzle mechanism 70 in the processing vessel 10A and moves back and forth within a range of approximately 180°. Alternatively, the substrate processing apparatus 1B may, of course, appropriately arrange the first nozzle mechanism 60, the second nozzle mechanism 70, and the third nozzle mechanism 80 depending on the number of substrates W to be processed.

[0110] 14 includes a processing vessel 10B that accommodates four substrates W and performs substrate processing. In this case, the nozzle mechanism section 52 provided in the processing vessel 10B may include two first nozzle mechanisms 60 and two second nozzle mechanisms 70. Each first nozzle mechanism 60 is disposed between two substrates W on one side of the processing vessel 10 and between two substrates W on the opposite side, and is configured to reciprocate within a range of approximately 180°. Each second nozzle mechanism 70 is disposed between two substrates W on each of two sides perpendicular to the first nozzle mechanism 60 and is configured to reciprocate within a range of approximately 180°.

[0111] The substrate processing apparatus 1C may also include a third nozzle mechanism 80 for performing etching and cleaning processes. For example, the substrate processing apparatus 1C may be configured such that the third nozzle mechanism 80 is installed at the center of the processing vessel 10B and rotates through 360 degrees. Alternatively, the first nozzle mechanism 60 or the second nozzle mechanism 70 may be installed at the center of the processing vessel 10B.

[0112] As described above, the substrate processing apparatuses 1B and 1C can simplify the structure of the substrate processing apparatuses 1B and 1C while improving the efficiency of substrate processing by using the first nozzle mechanism 60, the second nozzle mechanism 70, and the third nozzle mechanism 80 in combination for multiple substrates W.

[0113] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0114] A first aspect of the present disclosure is a substrate processing apparatus 1, 1A for processing a substrate W, comprising: a processing vessel 10, 10A, 10B having an internal space IS capable of accommodating a substrate W; a substrate holding part 20 that holds the substrate W in the internal space IS and rotates the substrate; a first nozzle mechanism 60 that is swingably mounted in the internal space IS and that, when swinging, injects a first processing gas onto the substrate W held by the substrate holding part 20; a second nozzle mechanism 70 that is swingably mounted separately from the first nozzle mechanism 60 in the internal space IS and that, when swinging, injects a second processing gas onto the substrate W held by the substrate holding part 20; and a control part 90 that controls the substrate holding part 20, the first nozzle mechanism 60, and the second nozzle mechanism 70, wherein, during substrate processing, the control part 90 swings the first nozzle mechanism 60 and the second nozzle mechanism 70 independently of each other while the substrate W is rotated by the substrate holding part 20.

[0115] As described above, the substrate processing apparatus 1, 1A can discharge the first processing gas and the second processing gas separately onto the substrate W by using the first nozzle mechanism 60 and the second nozzle mechanism 70, which swing independently of each other. That is, the first nozzle mechanism 60 forms a first processing point region PR1 of the first processing gas on the substrate W while moving the first processing point region PR1 to perform processing. Similarly, the second nozzle mechanism 70 forms a second processing point region PR2 of the second processing gas on the substrate W while moving the second processing point region PR2 to perform processing. This allows the substrate processing apparatus 1, 1A to perform substrate processing uniformly across the surface of the substrate W. In particular, by performing substrate processing pinpoint-wise across the surface of the substrate W, the substrate processing apparatus 1, 1A can reduce the supply amounts of the first processing gas and the second processing gas, thereby reducing costs.

[0116] The first nozzle mechanism 60 includes a first nozzle 61 extending through the internal space IS, a first nozzle operating unit 62 provided at the base end of the first nozzle 61 for swinging the first nozzle 61, and a first head 63 provided at the tip of the first nozzle 61 for discharging a first processing gas, while the second nozzle mechanism 70 includes a second nozzle 71 extending through the internal space IS, a second nozzle operating unit 72 provided at the base end of the second nozzle 71 for swinging the second nozzle 71, and a second head 73 provided at the tip of the second nozzle 71 for discharging a second processing gas. This allows the substrate processing apparatus 1, 1A to easily form a first processing point region PR1 for the first processing gas and a second processing point region PR2 for the second processing gas.

[0117] Furthermore, the first nozzle mechanism 60 reciprocates the first head 63 over at least the range between the center of the substrate W held by the substrate holding part 20 and the outer edge of the substrate W, and the second nozzle mechanism 70 reciprocates the second head 73 over at least the range between the center of the substrate W held by the substrate holding part 20 and the outer edge of the substrate W. This allows the substrate processing apparatus 1, 1A to stably process the entire surface of the substrate W.

[0118] Furthermore, the control unit 90 increases the moving speed of the first head 63 and the moving speed of the second head 73 at positions facing the center of the substrate W compared to positions facing the outer edge of the substrate W. This enables the substrate processing apparatus 1, 1A to perform substrate processing more uniformly on both the outer edge side of the substrate W, where the surface area is larger, and the center side of the substrate W, where the surface area is smaller.

[0119] Furthermore, the first head 63 forms a first rectangular processing point region PR1 that is elongated in the radial direction of the substrate W, and the second head 73 forms a second rectangular processing point region PR2 that is elongated in the radial direction of the substrate W. This allows the first processing point region PR1 and the second processing point region PR2 to appropriately cover the radial range of the substrate W, thereby improving the efficiency of substrate processing.

[0120] Each of the first head 63 and the second head 73 includes a processing gas discharge part 633, 733 that discharges the first processing gas or the second processing gas, a purge gas discharge part 634, 734 that surrounds the processing gas discharge part 633, 733 on the outside and discharges a purge gas, and a gas suction part 635, 735 that surrounds the purge gas discharge part 634, 734 on the outside and suctions the gas. This allows the substrate processing apparatus 1, 1A to immediately collect the discharged gas while controlling the discharge region PR11 of the first processing gas and the discharge region PR21 of the second processing gas.

[0121] The processing gas discharge units 633 and 733 are each provided with a heater 636 or 736 for heating the first processing gas or the second processing gas, thereby enabling the substrate processing apparatus 1 and 1A to heat the first processing gas or the second processing gas to a temperature suitable for substrate processing and discharge the gas onto the substrate W.

[0122] The processing gas discharge unit 733 also includes an antenna 737 for generating plasma in the first processing gas or the second processing gas, thereby enabling the substrate processing apparatus 1, 1A to easily perform plasma processing on the substrate W.

[0123] The substrate processing apparatus 1, 1A also includes a gas exhaust unit 40 that is connected to each of the first nozzle mechanism 60 and the second nozzle mechanism 70 and applies negative pressure to the gas suction units 635, 735 to suck in the gas from the gas suction units 635, 735. This allows the substrate processing apparatus 1, 1A to smoothly exhaust gas from above the substrate W. In particular, the gas exhaust unit 40 separately exhausts the gas from the first nozzle mechanism 60 and the gas from the second nozzle mechanism 70, making it possible to suppress reaction between the adsorbed gas and the reactive gas in the exhaust path 41.

[0124] Furthermore, the gas exhaust unit 40 is connected to the bottom of the processing vessel 10 and the periphery of the substrate holding unit 20 in addition to the first nozzle mechanism 60 and the second nozzle mechanism 70, and is capable of exhausting gas from the internal space IS. This allows the substrate processing apparatus 1, 1A to maintain a more stable internal pressure in the processing vessel 10 during substrate processing.

[0125] The processing vessel 10 also has a purge gas supply unit (gas introduction port 17) that supplies purge gas to the internal space IS from vertically above the first nozzle mechanism 60 and the second nozzle mechanism 70. This allows the substrate processing apparatus 1, 1A to introduce gas into the processing vessel 10 during substrate processing, thereby achieving uniform gas distribution throughout the entire internal space IS.

[0126] The first nozzle mechanism 60 discharges an adsorption gas as a first process gas to be adsorbed onto the substrate W, and the second nozzle mechanism 70 discharges a reaction gas as a second process gas to react with the adsorption gas adsorbed onto the substrate W. This allows the substrate processing apparatus 1, 1A to perform a film formation process (substrate processing) of forming a film such as a silicon oxide film or a silicon nitride film on the substrate W with high accuracy.

[0127] In addition to the first nozzle mechanism 60 and the second nozzle mechanism 70, the substrate processing apparatus 1A also includes a third nozzle mechanism 80 that is swingably disposed in the internal space IS and that, when swinging, ejects a third process gas onto the substrate W held by the substrate holding part 20. This allows the substrate processing apparatus 1A to perform various substrate processes using the first nozzle mechanism 60 to the third nozzle mechanism 80.

[0128] Furthermore, the third nozzle mechanism 80 discharges, as the third processing gas, an etching gas for etching the substrate W. This enables the substrate processing apparatus 1A to stably perform the etching processing of the substrate W.

[0129] A second aspect of the present disclosure is a substrate processing method for a substrate processing apparatus 1, 1A that processes a substrate W, the method comprising the steps of: (a) accommodating a substrate W in an internal space IS of a processing vessel 10 and rotating the substrate W while the substrate W is held by a substrate holding part 20; (b) discharging a first process gas from a first nozzle mechanism 60 provided in the internal space IS onto the substrate W held by the substrate holding part 20 while swinging the first nozzle mechanism 60; and (c) discharging a second process gas from a second nozzle mechanism 70 provided in the internal space IS separately from the first nozzle mechanism 60 onto the substrate W held by the substrate holding part 20 while swinging the second nozzle mechanism 70, wherein steps (b) and (c) are performed while step (a) is being performed, and the first nozzle mechanism 60 and the second nozzle mechanism 70 are swung independently of each other. Even in this case, the substrate processing method can perform uniform substrate processing across the surface of the substrate W.

[0130] The substrate processing apparatus 1, 1A-1C and substrate processing method according to the presently disclosed embodiments are illustrative in all respects and are not limiting. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The matters described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0131] 1, 1A Substrate Processing Equipment 10, 10A, 10B Processing vessel 20 Board holding part 60 First nozzle mechanism 70 Second nozzle mechanism 90 Control Unit IS interior space W substrate

Claims

1. A substrate processing apparatus for processing a substrate, a processing vessel having an internal space capable of accommodating the substrate; a substrate holder that holds the substrate in the internal space and rotates the substrate; a first nozzle mechanism that is swingably provided in the internal space and that, when swinging, ejects a first process gas onto the substrate held by the substrate holder; a second nozzle mechanism that is swingably provided in the internal space separately from the first nozzle mechanism and that, when swinging, ejects a second process gas onto the substrate held by the substrate holder; a control unit that controls the substrate holding unit, the first nozzle mechanism, and the second nozzle mechanism, the control unit swings the first nozzle mechanism and the second nozzle mechanism independently of each other while rotating the substrate by the substrate holding unit during substrate processing. Substrate processing equipment.

2. the first nozzle mechanism includes: a first nozzle extending through the internal space; a first nozzle operating unit provided at a base end of the first nozzle and configured to swing the first nozzle; and a first head provided at a tip end of the first nozzle and configured to discharge the first process gas; the second nozzle mechanism includes a second nozzle extending through the internal space, a second nozzle operating unit provided at a base end of the second nozzle and configured to swing the second nozzle, and a second head provided at a tip end of the second nozzle and configured to discharge the second process gas. The substrate processing apparatus according to claim 1 .

3. the first nozzle mechanism reciprocates the first head over at least a range between the center of the substrate held by the substrate holder and the outer edge of the substrate; the second nozzle mechanism reciprocates the second head over at least a range between the center of the substrate held by the substrate holder and the outer edge of the substrate; The substrate processing apparatus according to claim 2 .

4. the control unit makes the moving speed of the first head and the moving speed of the second head faster at a position facing the center of the substrate than at a position facing the outer edge of the substrate; The substrate processing apparatus according to claim 3 .

5. the first head forms a rectangular first processing point area that is elongated in a radial direction of the substrate; the second head forms a rectangular second processing point area that is long in the radial direction of the substrate; The substrate processing apparatus according to claim 2 .

6. Each of the first head and the second head includes: a processing gas discharge unit that discharges the first processing gas or the second processing gas; a purge gas discharge part surrounding the processing gas discharge part at the outside of the processing gas discharge part and discharging a purge gas; a gas suction section that surrounds the purge gas discharge section on the outside of the purge gas discharge section and sucks the gas; The substrate processing apparatus according to claim 2 .

7. the processing gas discharge unit includes a heater that heats the first processing gas or the second processing gas. The substrate processing apparatus according to claim 6 .

8. the processing gas discharge unit includes an antenna for generating plasma in the first processing gas or the second processing gas. The substrate processing apparatus according to claim 6 .

9. a gas discharge unit connected to each of the first nozzle mechanism and the second nozzle mechanism, and applying negative pressure to the gas suction unit to suck gas from the gas suction unit; The substrate processing apparatus according to claim 6 .

10. the gas exhaust unit is connected to the first nozzle mechanism and the second nozzle mechanism, as well as to a bottom surface of the processing vessel and a periphery of the substrate holding unit, and is capable of exhausting gas from the internal space. The substrate processing apparatus according to claim 9 .

11. the processing vessel includes a purge gas supply unit that supplies a purge gas to the internal space from a position vertically above the first nozzle mechanism and the second nozzle mechanism. The substrate processing apparatus according to claim 1 .

12. the first nozzle mechanism discharges an adsorption gas to be adsorbed onto the substrate as the first processing gas; the second nozzle mechanism discharges, as the second process gas, a reactive gas that reacts with the adsorbed gas adsorbed on the substrate; The substrate processing apparatus according to claim 1 .

13. a third nozzle mechanism that is swingably provided in the internal space, separate from the first nozzle mechanism and the second nozzle mechanism, and that, when swinging, discharges a third process gas onto the substrate held by the substrate holder; The substrate processing apparatus according to claim 1 .

14. the third nozzle mechanism discharges an etching gas for etching the substrate as the third process gas. The substrate processing apparatus according to claim 13 .

15. A substrate processing method for a substrate processing apparatus that processes a substrate, comprising: (a) placing a substrate in an internal space of a processing vessel and rotating the substrate while the substrate is held by a substrate holder; (b) discharging a first process gas from a first nozzle mechanism provided in the internal space onto the substrate held by the substrate holder while swinging the first nozzle mechanism; (c) discharging a second process gas from a second nozzle mechanism provided in the internal space separately from the first nozzle mechanism onto the substrate held by the substrate holder while swinging the second nozzle mechanism; carrying out the steps (b) and (c) while the step (a) is being carried out, and swinging the first nozzle mechanism and the second nozzle mechanism independently of each other; Substrate processing method.

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