Plasma processing equipment

Abstract

To provide a plasma treatment apparatus capable of keeping, at a fixed temperature, a temperature of a substrate to be treated, while treating plasma.SOLUTION: A plasma treatment apparatus (1) includes a preliminary heating chamber (4) for performing preliminary heating of a substrate to be treated, a treatment chamber (5) having a stage where the substrate to be treated is placed, and performing a prescribed plasma treatment to the substrate to be treated on the stage, and a conveyance mechanism (2A) for conveying the preliminarily-heated substrate to be treated from the preliminary heating chamber (4) onto the stage.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] A plasma processing apparatus is known that generates an inductively coupled plasma within a vacuum chamber using an antenna disposed within the vacuum chamber, and performs a predetermined plasma processing on a substrate using the generated plasma, depending on the type of plasma processing apparatus.

[0003] In order to reduce the heating of the substrate by the plasma during plasma processing, a technique has been proposed in which the high frequency power for exciting the plasma has a frequency of 27.12 MHz or higher. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-189964 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in conventional plasma processing apparatuses such as those described above, there was a problem in that it was difficult to maintain a constant temperature of the substrate being processed during plasma processing due to the heating of the substrate by the plasma that begins with the plasma processing.

[0006] The present disclosure has been made in consideration of the above-mentioned problems, and has an object to provide a plasma processing apparatus that can maintain the temperature of a substrate to be processed at a constant temperature during plasma processing. [Means for solving the problem]

[0007] In order to solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure includes a preheating chamber for performing preheating processing on a substrate to be processed, a processing chamber having a stage on which the substrate to be processed is placed and for performing a predetermined plasma processing on the substrate to be processed on the stage, and a transport mechanism for transporting the substrate to be processed that has been preheated from the preheating chamber onto the stage. [Effects of the Invention]

[0008] According to one aspect of the present disclosure, it is possible to provide a plasma processing apparatus capable of maintaining a constant temperature of a substrate to be processed during plasma processing. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram illustrating a configuration of a plasma processing apparatus according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a diagram illustrating the configuration of a main part of a preheating chamber. [Figure 3] FIG. 2 is a diagram illustrating a configuration of a main part of a processing chamber. [Figure 4] 10 is a graph illustrating an example of the operation of the plasma processing apparatus. [Figure 5] 10A and 10B are diagrams illustrating an example of an operation during plasma processing in a processing chamber. [Figure 6] FIG. 10 is a diagram illustrating a configuration of a main part of a plasma processing apparatus according to a second embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] [Embodiment 1] Hereinafter, a first embodiment of the present disclosure will be described in detail with reference to Fig. 1 to Fig. 3. Fig. 1 is a diagram illustrating the configuration of a plasma processing apparatus 1 according to the first embodiment of the present disclosure. Fig. 2 is a diagram illustrating the configuration of a main part of a preheating chamber 4. Fig. 3 is a diagram illustrating the configuration of a main part of a processing chamber 5.

[0011] In the following description, a plasma processing apparatus that forms a film on a substrate to be processed by a plasma CVD (Chemical Vapor Deposition) method using an inductively coupled plasma will be described as an example of the predetermined plasma processing. However, the plasma processing apparatus of the present disclosure can also be applied to a plasma processing apparatus that performs, as the predetermined plasma processing, a sputtering process that forms a predetermined substance on the substrate to be processed, or an etching process or ashing process that removes a predetermined substance from the substrate to be processed.

[0012] <Plasma processing device 1> 1, a plasma processing apparatus 1 of this embodiment includes a transfer chamber 2, a load lock chamber 3, a preheating chamber 4, a processing chamber 5, and a control unit 10 that controls each part of the plasma processing apparatus 1. The transfer chamber 2, the load lock chamber 3, the preheating chamber 4, and the processing chamber 5 each include a vacuum container that is maintained at a predetermined vacuum level.

[0013] The transfer chamber 2 is equipped with a transfer mechanism 2A. The transfer mechanism 2A transfers the substrate S to be processed between the transfer chamber 2, the load lock chamber 3, the preheating chamber 4, and the processing chamber 5 in accordance with instructions from the control unit 10. The substrate S to be processed may be, for example, a glass substrate or a synthetic resin substrate used in liquid crystal panel displays, organic EL (Electro Luminescence) panel displays, etc. The substrate S to be processed may also be a semiconductor substrate used for various applications. The plasma processing apparatus 1 forms a predetermined coating, such as a barrier (moisture-proof) film, on the substrate S to be processed by the above-mentioned predetermined plasma processing.

[0014] The load lock chamber 3 is used to carry the substrate S to be processed between the plasma processing apparatus 1 and the outside of the plasma processing apparatus 1. After the load lock chamber 3 is evacuated, the substrate S to be processed carried into the load lock chamber 3 is transported by the transport mechanism 2A sequentially to the preheating chamber 4 and the processing chamber 5. Then, the substrate S to be processed on which a predetermined coating film has been formed is transported by the transport mechanism 2A from the processing chamber 5 to the load lock chamber 3, and then carried out from the plasma processing apparatus 1 to the outside.

[0015] The preheating chamber 4 performs preheating processing on the substrate S. Specifically, as shown in Fig. 2, the preheating chamber 4 includes a vacuum container 4A and a preheating stage 4B. In the preheating chamber 4, for example, a heater (not shown) provided inside the preheating stage 4B performs preheating processing on the substrate S placed on the preheating stage 4B.

[0016] In the preheating process, a preheating temperature for the substrate S to be processed is predetermined according to the subsequent plasma processing in the processing chamber 5, and the control operation of the heater is also predetermined based on this preheating temperature. Then, the control unit 10 controls the heater using the predetermined control operation, thereby setting the temperature of the substrate S to be processed on the preheating stage 4B to the predetermined preheating temperature without providing a temperature sensor that directly detects the temperature of the substrate S to be processed.

[0017] In addition to this description, the preheating process may be performed by, for example, installing a temperature sensor such as a thermocouple or a resistance thermometer inside the preheating chamber 4 to directly detect the temperature of the substrate S to be processed, and having the control unit 10 perform feedback control using the detection result of the temperature sensor.

[0018] In the above description, a heater stage equipped with a heater is used as the preheating stage 4B, but this embodiment is not limited to this. For example, the preheating process may be performed by directly heating the substrate S to be processed by transmitting electromagnetic energy from an electromagnetic energy source such as an RF coil, a halogen lamp, or an infrared heater, by heating the substrate S via the stage, or by using plasma discharge.

[0019] The processing chamber 5 performs a predetermined plasma processing on the substrate S to be processed in accordance with instructions from the control unit 10. Specifically, as shown in Fig. 3, the processing chamber 5 includes a vacuum vessel 5A, a stage 5B on which the substrate S to be processed is placed, and a support 5C that supports the stage 5B inside the vacuum vessel 5A. Inside the vacuum vessel 5A, an antenna 8 that generates inductively coupled plasma inside the vacuum vessel 5A is provided above the stage 5B.

[0020] Both ends of the antenna 8 are airtightly extended to the outside of the vacuum vessel 5A. Furthermore, an impedance adjustment unit 7A and an impedance adjustment unit 7B are provided at one end and the other end of the antenna 8, respectively. The impedance adjustment unit 7A includes a matching circuit (not shown), and one end of the antenna 8 is connected to the power supply 6 via the matching circuit. Furthermore, the impedance adjustment unit 7B includes a variable capacitor (not shown), and the other end of the antenna 8 is grounded via the variable capacitor.

[0021] The power supply 6 supplies high frequency power of, for example, 13.56 MHz to one end of the antenna 8 via the impedance adjustment unit 7A. In the processing chamber 5, the control unit 10 controls the high frequency power to be supplied to the antenna 8 efficiently by changing the capacitance of the variable capacitor.

[0022] The processing chamber 5 is also equipped with a processing gas supply unit (not shown) that introduces processing gas containing a film-forming gas for the above-mentioned coating corresponding to the above-mentioned specified plasma processing into the interior of the vacuum vessel 5A, so that the plasma processing is performed in an atmosphere of the processing gas.

[0023] Stage 5B also has a flow path 12 therein through which a heat transfer medium (e.g., water) adjusted to a required temperature flows. This flow path 12 is connected to a pipe 13 that is provided inside support member 5C and extended to the outside of vacuum vessel 5A. In addition, processing chamber 5 has a temperature adjustment unit 11 connected to the pipe 13 outside vacuum vessel 5A, and temperature adjustment unit 11 adjusts the temperature of the heat transfer medium circulating and flowing through flow path 12 and pipe 13 in accordance with instructions from control unit 10, as shown by arrows A and B in FIG.

[0024] The processing chamber 5 is also equipped with a temperature sensor (not shown) that detects the temperature of the stage 5B, and the detection result of the temperature sensor is output to the control unit 10. The control unit 10 performs feedback control using the input detection result of the temperature sensor, thereby controlling the stage 5B to maintain a predetermined set temperature during the plasma processing.

[0025] The control unit 10 is a functional block that includes, for example, a central processing unit (CPU), a random access memory (RAM), a read only memory (ROM), and the like, and controls each component in accordance with information processing.

[0026] The control unit 10 outputs instructions to the preheating chamber 4 to control the preheating treatment in the preheating chamber 4, and outputs instructions to the treatment chamber 5 to control the plasma treatment in the treatment chamber 5. Details of the preheating treatment and the plasma treatment will be described later.

[0027] <Example of operation> 4 and 5, the operation of the plasma processing apparatus 1 of this embodiment will be specifically described. Fig. 4 is a graph illustrating an example of the operation of the plasma processing apparatus 1. Fig. 5 is a diagram illustrating an example of the operation during plasma processing in the processing chamber 5.

[0028] 4, in the plasma processing apparatus 1 of this embodiment, the control unit 10 controls the transfer mechanism 2A to transfer the substrate S to be processed from the load lock chamber 3 onto the preheating stage 4B in the preheating chamber 4. Thereafter, the control unit 10 causes the substrate S to be processed on the preheating stage 4B in the preheating chamber 4 to be preheated using the heater during the period K1 from time 0 to time T1.

[0029] Furthermore, the control unit 10 controls the preheating chamber 4 so that the temperature of the substrate S to be processed when the preheating process is performed is higher than the temperature of the substrate S to be processed placed on the stage 5B during plasma processing. Specifically, the control unit 10 increases the temperature of the substrate S to be processed from a temperature below 70°C, for example, to the processing temperature during plasma processing, for example, the preheating temperature above 150°C, as shown by the curve 60 in Fig. 5.

[0030] Next, when the control unit 10 detects the end of the preheating process at time T1, it controls the transport mechanism 2A to transport the preheated substrate S from the preheating chamber 4 onto the stage 5B of the processing chamber 5 during the period K2 from time T1 to time T2.

[0031] Thereafter, when the control unit 10 detects that the substrate S has been transferred onto the stage 5B at time T2, it causes the substrate S on the stage 5B to be subjected to plasma processing during a period K3 from time T2 to time T3. That is, during this period K3, the control unit 10 causes the power supply 6 to supply a high-frequency current to the antenna 8, thereby lighting the plasma PL on the substrate S from the antenna 8.

[0032] Furthermore, the control unit 10 controls the temperature of the stage 5B so that the temperature of the substrate S to be processed during plasma processing is higher than the temperature of the stage 5B. Specifically, as shown by the dashed-dotted line 50 in FIG. 4, the control unit 10 controls the temperature adjustment unit 11 to maintain the temperature of the stage 5B at a set temperature lower than the processing temperature, for example, 70°C. Furthermore, as will be described in detail later, this set temperature is determined so as to maintain an appropriate balance between cooling and heating of the substrate S to be processed during plasma processing.

[0033] During period K3 of this plasma lighting PL, as shown in Fig. 5, plasma P is irradiated onto substrate S to be processed on stage 5B. As a result, substrate S to be processed is heated by plasma P, as shown by arrow H1 in Fig. 5. Furthermore, during period K3 of this plasma lighting, heat is radiated from substrate S to be processed toward stage 5B, as shown by arrow H2 in Fig. 5. Then, control unit 10 controls temperature adjustment unit 11, so that the temperature of stage 5B can be easily kept constant at the set temperature.

[0034] As described above, by setting the set temperature of the stage 5B during plasma processing lower than the processing temperature of the substrate S to be processed, heat can be appropriately transferred in and out of the substrate S to be processed, and the temperature of the substrate S to be processed can be stabilized at the process temperature, as shown by the curve 60 in Fig. 4. As a result, the film formation process on the substrate S to be processed can be performed with high accuracy.

[0035] Specifically, in the processing chamber 5, cooling of the substrate S to be processed begins when the substrate S is placed on the stage 5B, and heating of the substrate S to be processed begins when plasma processing begins. In the plasma processing apparatus 1 of this embodiment, the set temperature of the stage 5B is determined so as to maintain an appropriate balance between cooling and heating of the substrate S to be processed during plasma processing, so that the temperature rise of the substrate S to be processed that accompanies the start of plasma processing is offset, as shown by arrows H1 and H2 in Fig. 5. This allows the temperature of the substrate S to be stabilized at the process temperature, as described above, and allows for accurate film formation processing of the substrate S to be processed.

[0036] Furthermore, in the processing chamber 5, cooling of the substrate S to be processed begins when the substrate S to be processed is placed on the stage 5B, so it is preferable to start the period K3 of the plasma lighting PL immediately from the time the substrate S to be processed is placed on the stage 5B, as this makes it easier to perform high-precision film formation processing of the coating.

[0037] The plasma processing apparatus 1 of this embodiment configured as described above includes a preheating chamber 4 for preheating the substrate S to be processed, a stage 5B on which the substrate S to be processed is placed, and a processing chamber 5 for performing a predetermined plasma processing on the substrate S on the stage 5B. The plasma processing apparatus 1 also includes a transport mechanism 2A for transporting the preheated substrate S from the preheating chamber 4 onto the stage 5B. This makes it possible to configure a plasma processing apparatus 1 in this embodiment that, unlike the conventional example described above, can maintain the temperature of the substrate S to be processed at a constant temperature during plasma processing. Note that the constant temperature referred to here may be any temperature that is substantially constant, and is not limited to always being one specific temperature.

[0038] Furthermore, in the plasma processing apparatus 1 of this embodiment, the preheating process is performed in the preheating chamber 4, so that the plasma processing can be performed smoothly in the processing chamber 5, and productivity can be easily improved, compared to the conventional example described above, which does not have the preheating chamber 4. Furthermore, compared to the conventional example described above, when performing plasma processing, there is no need to suddenly increase the temperature of the substrate S to be processed from, for example, room temperature to the process temperature, so that thermal damage to the substrate S to be processed can be suppressed, and a film can be formed on the substrate S to be processed with high precision.

[0039] In particular, when the process temperature is relatively low (for example, 150° C. or lower), it is more difficult to control the temperature of the substrate S during plasma processing than when the temperature is relatively high, but by performing a preliminary heating process, it is possible to stabilize the temperature of the substrate S and perform film formation even at a relatively low process temperature, as shown by curve 60 in Fig. 4. As a result, with the plasma processing apparatus 1 of this embodiment, it is possible to appropriately form a sealing film that covers an organic layer, for example, on a substrate on which an organic layer such as an organic EL light-emitting layer has been formed, while minimizing damage to the organic layer.

[0040] Furthermore, in the plasma processing apparatus 1 of this embodiment, the control unit 10 controls the preheating chamber 4 so that the temperature of the substrate S to be processed when the preheating process is performed is higher than the temperature of the substrate S to be processed placed on the stage 5B during plasma processing. As a result, in the plasma processing apparatus 1 of this embodiment, the influence of a decrease in the temperature of the substrate S to be processed when the substrate S to be processed is transported by the transport mechanism 2A can be suppressed, and the temperature of the substrate S to be processed can be more reliably maintained at a constant temperature during plasma processing.

[0041] Furthermore, in the plasma processing apparatus 1 of this embodiment, the control unit 10 controls the temperature of the stage 5B in a state in which the temperature of the substrate S to be processed during plasma processing is higher than the temperature of the stage 5B. This makes it possible for the plasma processing apparatus 1 of this embodiment to appropriately dissipate heat from the substrate S to be processed to the stage 5B during plasma processing, and more reliably maintain the temperature of the substrate S to be processed at a constant temperature during plasma processing.

[0042] When plasma discharge is used for preheating, problems can arise in that the substrate S to be preheated cannot be uniformly heated due to factors such as the density distribution of the plasma and an unsteady temperature distribution within the stage surface caused by heating by the plasma and heat radiation from the side of the stage. In contrast, in this embodiment, the preheating is performed in the preheating chamber 4 equipped with a heater, making it possible to perform a uniform preheating. Furthermore, even if the preheating stage 4B is enlarged as the size of the substrate S increases, the heating range of the heater can be easily enlarged, making it possible to more easily and reliably ensure temperature uniformity of the substrate S to be preheated.

[0043] [Embodiment 2] Embodiment 2 of the present disclosure will be specifically described with reference to Fig. 6. Fig. 6 is a diagram illustrating the configuration of a main part of a plasma processing apparatus according to embodiment 2 of the present disclosure. For ease of explanation, members having the same functions as those described in the above embodiment are denoted by the same reference numerals, and their description will not be repeated.

[0044] The main difference between this second embodiment and the first embodiment is that a plurality of flow paths independent of each other are provided inside the stage 5B.

[0045] In the plasma processing apparatus 1 of this embodiment, as shown in Fig. 6, a plurality of flow paths, for example, a first flow path 12P and a second flow path 12S provided separately from the first flow path 12P, are provided inside the stage 5B. In the first flow path 12P, a heat medium circulates within the first flow path 12P as shown by arrows A1 and B1 in Fig. 6. In addition, in the second flow path 12S, a heat medium circulates within the second flow path 12S as shown by arrows A2 and B2 in Fig. 6.

[0046] In addition, the first flow path 12P and the second flow path 12S are each connected independently to a temperature adjustment unit 11, and the temperature of the circulating heat medium is controlled to a desired temperature in accordance with instructions from the control unit 10.

[0047] With the above configuration, the plasma processing apparatus 1 of this embodiment achieves the same effects as those of the first embodiment. Furthermore, in the plasma processing apparatus 1 of this embodiment, the first flow path 12P and the second flow path 12S are provided inside the stage 5B, so that even when the stage 5B is enlarged to match the size of the substrate S to be processed, the temperature of the substrate S to be processed can be maintained at a constant temperature during plasma processing.

[0048] Furthermore, in the plasma processing apparatus 1 of this embodiment, the first flow path 12P and the second flow path 12S are provided inside the stage 5B, so that the influence of the plasma density distribution during plasma lighting can be mitigated. That is, even in the peripheral portion of the stage 5B where the plasma density is relatively lower than in the central portion of the stage 5B directly below the antenna 8, the temperature of the substrate S to be processed can be made uniform during plasma processing by making the temperature of the heat medium in the first flow path 12P flowing in the peripheral portion higher than the temperature of the heat medium in the second flow path 12S flowing in the central portion.

[0049] 〔summary〕 In order to solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure includes a preheating chamber for performing preheating processing on a substrate to be processed, a processing chamber having a stage on which the substrate to be processed is placed and for performing a predetermined plasma processing on the substrate to be processed on the stage, and a transport mechanism for transporting the substrate to be processed that has been preheated from the preheating chamber onto the stage.

[0050] According to the above configuration, it is possible to provide a plasma processing apparatus capable of maintaining the temperature of the substrate to be processed at a constant temperature during plasma processing.

[0051] In the plasma processing apparatus according to the above aspect, the apparatus may further include a control unit that controls each part of the plasma processing apparatus, the stage having a flow path therein through which a heat medium adjusted to a required temperature circulates, and the control unit may control the stage to a predetermined set temperature during the plasma processing.

[0052] According to the above configuration, the control unit uses a heat medium to control the temperature of the stage on which the substrate to be processed is placed during plasma processing, so that the temperature of the substrate to be processed can be reliably maintained at a constant temperature during plasma processing.

[0053] In the plasma processing apparatus according to the above aspect, a plurality of the flow paths may be provided inside the stage, the flow paths being independent from one another.

[0054] According to the above configuration, even when the stage is enlarged to match the size of the substrate to be processed, the temperature of the substrate to be processed can be reliably maintained at a constant temperature during plasma processing.

[0055] In the plasma processing apparatus according to the above aspect, the control unit may control the preheating chamber so that the temperature of the substrate to be processed when the preheating process is performed is higher than the temperature of the substrate to be processed placed on the stage during the plasma processing.

[0056] According to the above configuration, the effect of temperature drop on the substrate to be processed when the substrate is transported by the transport mechanism can be suppressed, and the temperature of the substrate to be processed can be more reliably maintained at a constant temperature during plasma processing.

[0057] In the plasma processing apparatus according to the above aspect, the control unit may control the temperature of the stage in a state in which the temperature of the substrate to be processed during the plasma processing is higher than the temperature of the stage.

[0058] According to the above configuration, it is possible to appropriately dissipate heat from the substrate to be processed to the stage during plasma processing, and the temperature of the substrate to be processed can be more reliably maintained at a constant temperature during plasma processing.

[0059] The present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present disclosure. [Explanation of symbols]

[0060] 1. Plasma processing equipment 2A Transport mechanism 4 Preheating chamber 5 Processing Room 5B Stage 10 Control Unit 12, 12P, 12S flow path S: Substrate to be processed

Claims

1. a preheating chamber for preheating the substrate to be processed; a processing chamber having a stage on which the substrate to be processed is placed, and performing a predetermined plasma processing on the substrate to be processed on the stage; a transport mechanism that transports the substrate to be processed that has been subjected to the preheating process from the preheating chamber onto the stage; a control unit that controls each unit of the plasma processing apparatus, The control unit controlling the temperature of the stage to maintain a constant set temperature during the plasma processing; the constant set temperature is a temperature of the stage at which a balance is maintained between heating of the substrate to be processed by plasma irradiated onto the substrate to be processed on the stage and heat radiation from the substrate to be processed, so that the temperature of the substrate to be processed is maintained at a constant process temperature; Furthermore, the control unit controlling the preheating chamber so that the temperature of the substrate to be processed when the preheating process is performed is a predetermined temperature that is higher than the process temperature; a plasma processing apparatus in which the predetermined temperature is the temperature of the substrate to be processed, which becomes the process temperature when the temperature of the substrate to be processed at the start of the plasma processing is reduced as the substrate is transported onto the stage by the transport mechanism to perform the plasma processing.

2. 2. The plasma processing apparatus according to claim 1, wherein the stage has a flow path therein through which a heat medium adjusted to a required temperature circulates.

3. The plasma processing apparatus according to claim 2 , wherein a plurality of the flow paths independent from each other are provided inside the stage.

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