Light-emitting device and projector

Abstract

To provide a light-emitting device capable of attaining resistance reduction while reducing light which is leaked to the side of a second electrode and absorbed in the second electrode.SOLUTION: A light-emitting device comprises: a laminate provided in a substrate; a first electrode provided in the laminate at an opposite side of the substrate; and a second electrode provided in the first electrode at an opposite side of the substrate. The laminate includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type that is different from the first conductivity type; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is provided between the substrate and the light-emitting layer, and the first electrode constitutes a plurality of columnar parts. The second electrode is connected to the plurality of columnar parts, and the first electrode is a transparent electrode consisting of a metal oxide through which light generated in the light-emitting layer is transmitted.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device and a projector. [Background technology]

[0002] Semiconductor lasers are expected to be the next generation of high-brightness light sources. In particular, semiconductor lasers that incorporate nanocolumns are expected to be able to emit high-power light with a narrow beam angle due to the photonic crystal effect of the nanocolumns.

[0003] For example, Patent Document 1 describes a semiconductor light-emitting device including nanocolumns made of fine columnar crystals including an n-type cladding layer, an active layer, and a p-type semiconductor layer including a p-type cladding layer, and a p-side electrode such as ITO electrically connected to the p-type semiconductor layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2010 / 023921 Summary of the Invention [Problem to be solved by the invention]

[0005] If the distance between the p-side electrode and the active layer is small, light generated in the active layer leaks to the p-side electrode and is easily absorbed by it. Increasing the distance between the p-side electrode and the active layer can reduce light absorption in the p-side electrode, but increasing the distance between the p-side electrode and the active layer by thickening the p-type semiconductor layer increases the resistance. [Means for solving the problem]

[0006] One aspect of the light emitting device according to the present invention is A substrate; a laminate provided on the substrate; a first electrode provided on the laminate opposite to the substrate; a second electrode provided on the opposite side of the first electrode from the substrate; and The laminate is a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and the first semiconductor layer is provided between the substrate and the light emitting layer, the first electrode comprises a plurality of pillars; the second electrode is connected to the plurality of columns; The first electrode is a transparent electrode made of a metal oxide that transmits light generated in the light-emitting layer.

[0007] One aspect of the projector according to the present invention is The light emitting device has one aspect. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view schematically showing a light-emitting device according to an embodiment of the present invention. [Figure 2] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the embodiment. [Figure 3] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a first modified example of the present embodiment. [Figure 4] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a second modified example of the present embodiment. [Figure 5] FIG. 10 is a plan view schematically showing a light emitting device according to a fourth modified example of the embodiment. [Figure 6] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a fourth modified example of the embodiment. [Figure 7] FIG. 10 is a plan view schematically showing a light emitting device according to a fifth modified example of the present embodiment. [Figure 8] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a fifth modified example of the embodiment. [Figure 9]FIG. 1 is a diagram schematically showing a projector according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention as defined in the claims. Furthermore, not all of the configurations described below are necessarily essential components of the present invention.

[0010] 1. Light-emitting device 1.1. Overall structure First, the light emitting device according to this embodiment will be described with reference to the drawings. Fig. 1 is a cross-sectional view that schematically shows a light emitting device 100 according to this embodiment.

[0011] 1, the light emitting device 100 includes, for example, a substrate 10, a laminate 20, a first electrode 40, a second electrode 42, and a third electrode 44. The light emitting device 100 is, for example, a semiconductor laser.

[0012] The substrate 10 is, for example, a Si substrate, a GaN substrate, a sapphire substrate, or a SiC substrate.

[0013] The laminate 20 is provided on a substrate 10. In the illustrated example, the laminate 20 is provided on the substrate 10. The laminate 20 includes, for example, a buffer layer 22. Furthermore, the laminate 20 forms a columnar section 30.

[0014] In this specification, in the stacking direction of the stacked body 20 (hereinafter also simply referred to as the "stacking direction"), when the light emitting layer 34 is used as a reference, the direction from the light emitting layer 34 toward the second semiconductor layer 36 is described as "up," and the direction from the light emitting layer 34 toward the first semiconductor layer 32 is described as "down." Also, a direction perpendicular to the stacking direction is also referred to as an "in-plane direction." Also, the "stacking direction of the stacked body 20" refers to the stacking direction of the first semiconductor layer 32 and the light emitting layer 34 of the columnar section 30.

[0015] The buffer layer 22 is provided on the substrate 10. The buffer layer 22 is, for example, an n-type GaN layer doped with Si. A mask layer 24 for growing the columnar section 30 is provided on the buffer layer 22. The mask layer 24 is, for example, a silicon oxide layer, a titanium layer, a titanium oxide layer, an aluminum oxide layer, or the like.

[0016] The columnar portion 30 is provided on the buffer layer 22. The columnar portion 30 has a columnar shape that protrudes upward from the buffer layer 22. In other words, the columnar portion 30 protrudes upward from the substrate 10 via the buffer layer 22. The columnar portion 30 is also called, for example, a nanocolumn, a nanowire, a nanorod, or a nanopillar. The planar shape of the columnar portion 30 is, for example, a polygon such as a hexagon, or a circle.

[0017] The diameter of the columnar section 30 is, for example, 50 nm or more and 500 nm or less. By making the diameter of the columnar section 30 500 nm or less, it is possible to obtain a light emitting layer 34 of high quality crystals and reduce strain inherent in the light emitting layer 34. This reduces the light generated in the light emitting layer 34. can be amplified with high efficiency.

[0018] The "diameter of the columnar portion" refers to the diameter when the planar shape of the columnar portion 30 is circular, and refers to the diameter of the smallest encompassing circle when the planar shape of the columnar portion 30 is not circular. For example, when the planar shape of the columnar portion 30 is polygonal, the diameter of the columnar portion 30 refers to the diameter of the smallest circle that includes the polygon inside, and when the planar shape of the columnar portion 30 is elliptical, the diameter of the smallest circle that includes the ellipse inside.

[0019] A plurality of columnar sections 30 are provided. The interval between adjacent columnar sections 30 is, for example, 1 nm or more and 500 nm or less. The plurality of columnar sections 30 are arranged in a predetermined direction at a predetermined pitch when viewed from the stacking direction. The plurality of columnar sections 30 are arranged, for example, in a triangular lattice pattern or a square lattice pattern. The plurality of columnar sections 30 can exhibit the effect of a photonic crystal.

[0020] The "pitch of the columnar portions" refers to the distance between the centers of adjacent columnar portions 30 along a predetermined direction. When the planar shape of the columnar portions 30 is a circle, the "center of the columnar portion" refers to the center of the circle. When the planar shape of the columnar portions 30 is not a circle, the "center of the columnar portion" refers to the center of the smallest encompassing circle. For example, when the planar shape of the columnar portions 30 is a polygon, the center of the smallest circle that contains the polygon within itself. When the planar shape of the columnar portions 30 is an ellipse, the center of the smallest circle that contains the ellipse within itself.

[0021] The columnar section 30 has a first semiconductor layer 32 , a light emitting layer 34 , a second semiconductor layer 36 , and a first electrode 40 .

[0022] The first semiconductor layer 32 is provided on the buffer layer 22. The first semiconductor layer 32 is provided between the substrate 10 and the light emitting layer 34. The first semiconductor layer 32 is a semiconductor layer of a first conductivity type. The first semiconductor layer 32 is, for example, an n-type GaN layer doped with Si.

[0023] The light emitting layer 34 is provided between the first semiconductor layer 32 and the second semiconductor layer 36. The light emitting layer 34 generates light when a current is injected into it. The light emitting layer 34 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers that are not intentionally doped with impurities. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The light emitting layer 34 has an MQW (Multiple Quantum Well) structure composed of the well layer and the barrier layer.

[0024] There is no particular limitation on the number of well layers and barrier layers that make up the light-emitting layer 34. For example, only one well layer may be provided, in which case the light-emitting layer 34 has an SQW (Single Quantum Well) structure.

[0025] The second semiconductor layer 36 is provided on the light emitting layer 34. The second semiconductor layer 36 is provided between the light emitting layer 34 and the first electrode 40. The second semiconductor layer 36 is a semiconductor layer of a second conductivity type different from the first conductivity type. The second semiconductor layer 36 is, for example, a p-type GaN layer doped with Mg. The first semiconductor layer 32 and the second semiconductor layer 36 are cladding layers that have the function of confining light in the light emitting layer 34.

[0026] Although not shown, an OCL (Optical Confinement Layer) made of an i-type InGaN layer and a GaN layer may be provided at least one between the first semiconductor layer 32 and the light emitting layer 34 and between the light emitting layer 34 and the second semiconductor layer 36. The second semiconductor layer 36 may also have an EBL (Electron Blocking Layer) made of a p-type AlGaN layer.

[0027] In the light-emitting device 100, a p-type second semiconductor layer 36, an i-type light-emitting layer 34 that is not intentionally doped with impurities, and an n-type first semiconductor layer 32 form a p-i-n diode. In the light-emitting device 100, when a forward bias voltage of the p-i-n diode is applied between the second electrode 42 and the third electrode 44, a current is injected into the light-emitting layer 34, causing recombination of electrons and holes in the light-emitting layer 34. This recombination generates light. The light generated in the light-emitting layer 34 propagates in the in-plane direction and forms a standing wave due to the photonic crystal effect of the multiple columnar portions 30. The light is then subjected to gain in the light-emitting layer 34, resulting in laser oscillation. The light-emitting device 100 then emits the +1st-order diffracted light and the −1st-order diffracted light as laser light in the stacking direction.

[0028] Although not shown, a reflective layer may be provided between the substrate 10 and the buffer layer 22 or below the substrate 10. The reflective layer is, for example, a DBR (Distributed Bragg Reflector) layer. The reflective layer can reflect light generated in the light-emitting layer 34, and the light-emitting device 100 can emit light only from the second electrode 42 side.

[0029] Although the above description has been given of an InGaN-based light emitting layer 34, various material systems that can emit light when a current is injected depending on the wavelength of the emitted light can be used for the light emitting layer 34. For example, semiconductor materials such as AlGaN-based, AlGaAs-based, InGaAs-based, InGaAsP-based, InP-based, GaP-based, and AlGaP-based materials can be used.

[0030] 1.2. Electrodes The first electrode 40 is provided on the side of the stacked body 20 opposite to the substrate 10. In the illustrated example, the first electrode 40 is provided on the second semiconductor layer 36. The first electrode 40 is in contact with the second semiconductor layer 36. The first electrode 40 is provided between the second semiconductor layer 36 and the second electrode 42. The first semiconductor layer 32, the light emitting layer 34, the second semiconductor layer 36, and the first electrode 40 form a plurality of columnar sections 30. In the illustrated example, there is a gap between adjacent columnar sections 30.

[0031] The average refractive index in the in-plane direction of the portion where the first electrode 40 is provided is lower than the average refractive index in the in-plane direction of the portion where the second semiconductor layer 36 is provided. Here, the average refractive index n AVE is expressed as the following equation (1).

[0032]

number

[0033] In formula (1), ε1 is the dielectric constant of the material constituting the first electrode 40. ε2 is the dielectric constant of the material between adjacent columnar sections 30, and is "1" if the adjacent columnar sections 30 are voids. φ is the filling factor of the first electrode 40 in the in-plane direction of the portion where the first electrode 40 is provided (the ratio (S1 / (S1+S2)) of the cross-sectional area S1 of the first electrode 40 to the cross-sectional area S2 of the void when the light emitting device 100 is cut along a plane parallel to the in-plane direction). The average refractive index in the in-plane direction of the portion where the second semiconductor layer 36 is provided and the average refractive index in the in-plane direction of the portion where the second electrode 42 is provided can also be calculated in the same manner as formula (1).

[0034] The refractive index of the first electrode 40 is lower than that of the second semiconductor layer 36, for example. The resistivity of the first electrode 40 is lower than that of the second semiconductor layer 36. The first electrode 40 is a transparent electrode made of a metal oxide that transmits the light generated in the light emitting layer 34. The material of the first electrode 40 is, for example, Examples of the material for the first electrode 40 include ITO (Indium Tin Oxide) and ZnO. The material for the first electrode 40 may be IGZO, which is made of In, Ga, Zn, and O. In the illustrated example, the thickness of the first electrode 40 is greater than the thickness of the light-emitting layer 34 and less than the thickness of the second semiconductor layer 36.

[0035] The second electrode 42 is provided on the side of the first electrode 40 opposite the substrate 10. In the illustrated example, the second electrode 42 is provided on the first electrode 40. The second electrode 42 is connected to the multiple columnar sections 30. The second electrode 42 is provided across the multiple columnar sections 30. In the illustrated example, the second electrode 42 is in contact with the multiple columnar sections 30. The second electrode 42 has the shape of a continuous film that is continuous in the in-plane direction. The average refractive index in the in-plane direction of the portion where the second electrode 42 is provided is higher than the average refractive index in the in-plane direction of the portion where the first electrode 40 is provided. The second electrode 42 is a transparent electrode made of metal oxide that transmits light generated in the light-emitting layer 34. The material of the second electrode 42 is, for example, the same as that of the first electrode 40. The first electrode 40 and the second electrode 42 are electrodes for injecting current into the light-emitting layer 34.

[0036] The third electrode 44 is provided on the buffer layer 22. The buffer layer 22 may be in ohmic contact with the third electrode 44. The third electrode 44 is electrically connected to the first semiconductor layer 32. In the example shown in the figure, the third electrode 44 is electrically connected to the first semiconductor layer 32 via the buffer layer 22. As the third electrode 44, for example, a layer formed by laminating a Cr layer, a Ni layer, and an Au layer in this order from the buffer layer 22 side is used. The third electrode 44 is the other electrode for injecting a current into the light-emitting layer 34.

[0037] 1.3. Effects The light-emitting device 100 includes a first electrode 40 provided on the side of the laminate 20 opposite the substrate 10, and a second electrode 42 provided on the side of the first electrode 40 opposite the substrate 10. The first electrode 40 forms a plurality of columnar sections 30, and the second electrode 42 is connected to the plurality of columnar sections 30. Therefore, the light-emitting device 100 can have a greater distance between the light-emitting layer 34 and the second electrode 42 than when the first electrode 40 is not provided. Therefore, even if light generated in the light-emitting layer 34 leaks toward the second electrode 42, the amount of light absorbed by the second electrode 42 can be reduced. Furthermore, even if light leaks toward the second electrode 42, because the first electrode 40 forms a plurality of columnar sections 30, light absorption by the first electrode 40 can be reduced compared to when the first electrode is a continuous film that does not form a plurality of columnar sections and is continuous in the in-plane direction.

[0038] Furthermore, in the light-emitting device 100, the first electrode 40 is a transparent electrode made of a metal oxide that transmits light generated in the light-emitting layer 34. Therefore, in the light-emitting device 100, the resistance of the first electrode 40 can be made smaller than when the first electrode 40 is made of the second semiconductor layer.

[0039] Therefore, in the light emitting device 100, it is possible to reduce the resistance while reducing the light that leaks to the second electrode 42 and is absorbed by the second electrode 42. By reducing the light that leaks to the second electrode 42 and is absorbed by the second electrode 42, it is possible to lower the oscillation threshold. By reducing the resistance, it is possible to lower the operating voltage of the light emitting device 100 and reduce power consumption.

[0040] 1, in the light emitting device 100, the average refractive index in the in-plane direction is lower in the portion where the first electrode 40 is provided than in the portion where the second semiconductor layer 36 is provided. Therefore, in the light emitting device 100, the optical confinement coefficient can be made larger than when the average refractive index in the in-plane direction in the portion where the second semiconductor layer is provided is equal to or higher than the average refractive index in the in-plane direction in the portion where the first electrode is provided.

[0041] 1 shows a graph showing the average refractive index and light intensity in the in-plane direction versus the position in the stacking direction. In the graph of FIG. 1, the dashed line indicates the area where the first electrode is provided with a plurality of columnar portions. The graph shows the average refractive index and light intensity in the case of a continuous film that does not form a layer but continues in the in-plane direction.

[0042] In the light emitting device 100, the first semiconductor layer 32, the second semiconductor layer 36, and the light emitting layer 34 form a plurality of columnar sections 30. Therefore, in the light emitting device 100, a light emitting layer 34 with higher quality crystals can be obtained, and strain inherent in the light emitting layer 34 can be reduced, compared to when the first semiconductor layer, the second semiconductor layer, and the light emitting layer do not form a plurality of columnar sections.

[0043] In the light emitting device 100, the second electrode 42 is a transparent electrode made of a metal oxide that transmits light generated in the light emitting layer 34. Therefore, in the light emitting device 100, light can be emitted by passing through the second electrode 42.

[0044] 2. Light-emitting device manufacturing method Next, a method for manufacturing the light emitting device 100 according to this embodiment will be described with reference to the drawings. Figure 2 is a cross-sectional view schematically showing the manufacturing process of the light emitting device 100 according to this embodiment.

[0045] 2, a buffer layer 22 is epitaxially grown on a substrate 10. Examples of methods for epitaxial growth include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy).

[0046] Next, a mask layer 24 is formed on the buffer layer 22. The mask layer 24 is formed by film formation using, for example, an electron beam evaporation method or a sputtering method, and patterning. The patterning is performed by, for example, electron beam lithography and dry etching.

[0047] Next, using the mask layer 24 as a mask, the first semiconductor layer 32, the light-emitting layer 34, and the second semiconductor layer 36 are epitaxially grown in this order on the buffer layer 22. Examples of epitaxial growth methods include MOCVD and MBE. When using MBE, RF-MBE, which utilizes a high-frequency plasma-excited nitrogen source, may also be used. This process allows the formation of the stack 20.

[0048] As shown in FIG. 1, a first electrode 40 is formed on the second semiconductor layer 36. The first electrode 40 is formed by, for example, a sputtering method. By controlling the temperature, pressure, and film formation rate during the sputtering method, it is possible to form a first electrode 40 that maintains an independent columnar shape. This process makes it possible to form a plurality of columnar portions 30.

[0049] Next, the second electrode 42 is formed on the first electrode 40. The second electrode 42 is formed by, for example, electron beam evaporation. By forming the second electrode 42 by electron beam evaporation, the second electrode 42 that is connected to the multiple columnar sections 30 can be formed.

[0050] The second electrode 42 may be formed by sputtering. When the second electrode 42 is formed by sputtering, the conditions for the sputtering are different from the conditions for the sputtering in the step of forming the first electrode 40, and are conditions for connecting the second electrode 42 to the multiple columnar portions 30.

[0051] Next, a third electrode 44 is formed on the buffer layer 22. The third electrode 44 is formed by, for example, sputtering or vacuum deposition. The order of the step of forming the first electrode 40 and the step of forming the third electrode 44 is not particularly limited. The order of the step of forming the second electrode 42 and the step of forming the third electrode 44 is not particularly limited.

[0052] Through the above steps, the light emitting device 100 can be manufactured.

[0053] 3. Modifications of the Light-Emitting Device 3.1. First Variant Next, a light emitting device 200 according to a first modified example of this embodiment will be described with reference to the drawings. Fig. 3 is a cross-sectional view that schematically shows the light emitting device 200 according to the first modified example of this embodiment.

[0054] Hereinafter, in the light emitting device 200 according to the first modified example of this embodiment, components having the same functions as the components of the light emitting device 100 according to this embodiment described above will be denoted by the same reference numerals, and detailed description thereof will be omitted. This also applies to the second to fifth modified examples of this embodiment described below.

[0055] As shown in FIG. 3, the light emitting device 200 differs from the light emitting device 100 described above in that it has a first metal layer 50.

[0056] The first metal layer 50 is provided between the second semiconductor layer 36 and the first electrode 40. In the illustrated example, the first metal layer 50 constitutes a plurality of columnar sections 30. The first metal layer 50 transmits light generated in the light-emitting layer 34. The thickness of the first metal layer 50 is, for example, several tens of nanometers or less. If the thickness of the first metal layer 50 is several tens of nanometers or less, the first metal layer 50 can transmit light generated in the light-emitting layer 34. The second semiconductor layer 36 may be in ohmic contact with the first metal layer 50.

[0057] The resistivity of the first metal layer 50 is lower than the resistivity of the first electrode 40 and the resistivity of the second electrode 42. The first metal layer 50 may be, for example, a layer formed by laminating a Ti layer and an Au layer in this order from the second semiconductor layer 36 side. By providing a Ti layer in contact with the second semiconductor layer 36, it is possible to improve the adhesion between the second semiconductor layer 36 and the first metal layer 50 compared to when no Ti layer is provided. The first metal layer 50 may be formed by, for example, electron beam evaporation.

[0058] The light emitting device 200 includes a first metal layer 50 provided between the second semiconductor layer 36 and the first electrode 40, which transmits light generated in the light emitting layer 34, and the resistivity of the first metal layer 50 is lower than the resistivity of the first electrode 40. Therefore, in the light emitting device 200, the contact resistance between the first metal layer 50 and the second semiconductor layer 36 can be reduced compared to when the resistivity of the first metal layer is equal to or higher than the resistivity of the first electrode. This makes it possible to obtain light emission with high uniformity in the in-plane direction.

[0059] 3.2. Second Variant Next, a light emitting device 300 according to a second modification of this embodiment will be described with reference to the drawings. Fig. 4 is a cross-sectional view that schematically shows the light emitting device 300 according to the second modification of this embodiment.

[0060] As shown in FIG. 4, the light emitting device 300 differs from the light emitting device 100 described above in that it has a second metal layer 52.

[0061] The second metal layer 52 is provided between the first electrode 40 and the second electrode 42. The second electrode 42 is connected to the plurality of columnar sections 30 via the second metal layer 52. The second metal layer 52 transmits light generated in the light-emitting layer 34. The thickness of the second metal layer 52 is, for example, several tens of nanometers or less. If the thickness of the second metal layer 52 is several tens of nanometers or less, the second metal layer 52 can transmit light generated in the light-emitting layer 34.

[0062] The resistivity of the second metal layer 52 is lower than the resistivity of the first electrode 40 and the resistivity of the second electrode 42. For example, the second metal layer 52 may be formed by laminating a Ti layer and an Au layer in this order from the first electrode 40 side. By providing a Ti layer in contact with the first electrode 40, the adhesion between the first electrode 40 and the second metal layer 52 can be improved compared to when no Ti layer is provided. The second metal layer 52 is formed by, for example, electron beam evaporation.

[0063] The light emitting device 300 has a second metal layer 52 provided between the first electrode 40 and the second electrode 42, which transmits light generated in the light emitting layer 34, and the resistivity of the second metal layer 52 is lower than the resistivity of the second electrode 42. Therefore, in the light emitting device 200, the contact resistance between the first electrode 40 and the second metal layer 52 can be reduced compared to when the resistivity of the second metal layer is equal to or higher than the resistivity of the second electrode 42. This makes it possible to obtain light emission with high uniformity in the in-plane direction.

[0064] 3.3. Third Variant Next, a light emitting device according to a third modification of this embodiment will be described.

[0065] In the light emitting device 100 according to the present embodiment described above, the second electrode is a transparent electrode made of metal oxide that transmits light generated in the light emitting layer .

[0066] In contrast, in a light emitting device according to a third modification of this embodiment (hereinafter also simply referred to as "light emitting device according to the third modification"), the second electrode 42 is a metal electrode made of metal. The resistivity of the second electrode 42 is lower than the resistivity of the first electrode 40. As the second electrode 42, for example, a layer formed by laminating a Ti layer and an Au layer in this order from the first electrode 40 side is used. By providing a Ti layer in contact with the first electrode 40, it is possible to improve the adhesion between the first electrode 40 and the second electrode 42 compared to a case where no Ti layer is provided.

[0067] The second electrode 42 does not transmit light generated in the light-emitting layer 34. The light-emitting device according to the third modification is, for example, a flip-chip type light-emitting device in which light generated in the light-emitting layer 34 is emitted from the substrate 10 side. In the light-emitting device according to the third modification, no reflective layer is provided between the substrate 10 and the buffer layer 22 or below the substrate 10.

[0068] In the light emitting device according to the third modification, the resistivity of the second electrode 42 is lower than the resistivity of the first electrode 40. Therefore, in the light emitting device according to the third modification, the resistance of the second electrode 42 can be reduced compared to when the resistivity of the second electrode is equal to or higher than the resistivity of the first electrode 40. This makes it possible to obtain light emission with high uniformity in the in-plane direction.

[0069] 3.4. Fourth Variant Next, a light emitting device 400 according to a fourth modification of this embodiment will be described with reference to the drawings. Fig. 5 is a plan view schematically showing the light emitting device 400 according to the fourth modification of this embodiment. Fig. 6 is a view of VI in Fig. 5 schematically showing the light emitting device 400 according to the fourth modification of this embodiment. 5 is a cross-sectional view taken along line VI. For convenience, in Fig. 5, members other than the column assembly 430 and the spacer electrode 46 of the light emitting device 400 are not shown.

[0070] As shown in FIGS. 5 and 6, the light emitting device 400 differs from the light emitting device 100 described above in that a plurality of columnar sections 30 form a columnar section assembly 430.

[0071] A plurality of columnar portion assemblies 430 are provided. As shown in Fig. 5, the columnar portion assemblies 430 are arranged in a predetermined direction at a predetermined pitch when viewed from the stacking direction. In the illustrated example, the plurality of columnar portions 30 are arranged in a triangular lattice pattern. One columnar portion assembly 430 is composed of, for example, four columnar portions 30.

[0072] In the light emitting device 400, by forming a columnar assembly 430 using multiple columnar sections 30, the pitch of the periodic structure for producing the photonic crystal effect can be increased even if the diameter of the columnar sections 30 is small.

[0073] As shown in FIG. 6 , the light emitting device 400 has a spacer electrode 46 provided between the first electrode 40 and the second electrode 42. In the light emitting device 400, the first electrode 40 is formed under conditions in which the width gradually increases, and the spacer electrode 46 is formed across the multiple column sections 30 that make up one column section assembly 430. One spacer electrode 46 is provided for one column section assembly 430. The spacer electrode 46 is in contact with the multiple column sections 30. The spacer electrode 46 is an electrode formed under the same conditions as the first electrode 40. The spacer electrode 46 is made of the same material as the first electrode 40. The second electrode 42 is provided across the multiple spacer electrodes 46. The second electrode 42 is connected to the multiple column sections 30 via the spacer electrode 46. The second electrode 42 is a common electrode in the multiple column section assemblies 430.

[0074] 3.5. Fifth Variant Next, a light emitting device 500 according to a fifth modified example of this embodiment will be described with reference to the drawings. Fig. 7 is a plan view schematically showing the light emitting device 500 according to the fifth modified example of this embodiment. Fig. 8 is a cross-sectional view taken along line VIII-VIII in Fig. 7, schematically showing the light emitting device 500 according to the fifth modified example of this embodiment. For convenience, the second electrode 42 is not shown in Fig. 7.

[0075] In the light emitting device 100 described above, the first semiconductor layer 32, the light emitting layer 34, the second semiconductor layer 36, and the first electrode 40 form a plurality of columnar sections 30, as shown in FIG.

[0076] 7 and 8, in the light emitting device 500, the first semiconductor layer 32, the light emitting layer 34, and the second semiconductor layer 36 do not form multiple columnar sections 30. The multiple columnar sections 30 are formed by the first electrode 40. The first semiconductor layer 32, the light emitting layer 34, and the second semiconductor layer 36 have a film shape whose size in the in-plane direction is larger than that in the thickness direction.

[0077] As shown in Fig. 7, the light-emitting layer 34 has a first side surface 34a and a second side surface 34b. The first side surface 34a and the second side surface 34b face in opposite directions. In the illustrated example, the first side surface 34a and the second side surface 34b are parallel to each other. The multiple columnar sections 30 are arranged, for example, in a triangular lattice pattern. The planar shape of the columnar sections 30 is, for example, a circle.

[0078] A portion of the light-emitting layer 34 constitutes an optical waveguide 534. The optical waveguide 534 is capable of guiding light. When viewed from the stacking direction, the first electrode 40 overlaps with the optical waveguide 534. A current is injected into the optical waveguide 534 from the first electrode 40. In the example shown in FIG. 8 , the multiple columnar sections 30 form a row. A first columnar section 30a is located at one end of the row formed by the multiple columnar sections 30, and a second columnar section 30b is located at the other end. In the illustrated example, when viewed from the stacking direction, the center of the first columnar section 30a overlaps with one end of the optical waveguide 534, and the center of the second columnar section 30b overlaps with the other end of the optical waveguide 534.

[0079] The third electrode 44 is provided below the substrate 10. The substrate 10 is conductive. The substrate 10 may be in ohmic contact with the third electrode 44. The third electrode 44 is formed, for example, by laminating a Cr layer, a Ni layer, and an Au layer in this order from the substrate 10 side.

[0080] In the light emitting device 500, a forward bias pin diode is provided between the second electrode 42 and the third electrode 44. When a bias voltage is applied, an optical waveguide 534 is generated in the light-emitting layer 34, and recombination of electrons and holes occurs in the optical waveguide 534 in the light-emitting layer 34. This recombination causes light to be emitted. This generated light is the starting point for continuous stimulated emission, and the light intensity is amplified in the optical waveguide 534. As the light travels back and forth through the optical waveguide 534 between the first side surface 34a and the second side surface 34b, it receives gain, undergoes laser oscillation, and is emitted as laser light from at least one of the first side surface 34a and the second side surface 34b.

[0081] The pitch between the multiple columnar sections 30 is smaller than the wavelength of the light generated in the light emitting layer 34. Therefore, it is possible to prevent the light traveling through the optical waveguide 534 from being scattered by the multiple columnar sections 30.

[0082] Although not shown, an anti-reflection film may be provided on the first side surface 34a and a reflective film may be provided on the second side surface 34b, so that light can be emitted only from the first side surface 34a.

[0083] Furthermore, in the above example, the optical waveguide 534 is described as a gain-guiding type optical waveguide whose shape is determined by current injection from the first electrode 40. However, although not shown, the optical waveguide 534 may also be a refractive index-guiding type optical waveguide whose shape is determined by a ridge provided in the second semiconductor layer 36.

[0084] The plurality of columnar sections 30 may or may not be arranged periodically. The plurality of columnar sections 30 may be arranged so as to exhibit a photonic crystal effect.

[0085] 4. Projector Next, a projector according to this embodiment will be described with reference to the drawings. Fig. 9 is a diagram schematically showing a projector 800 according to this embodiment.

[0086] The projector 800 includes, for example, a light emitting device 100 as a light source.

[0087] Projector 800 has a housing (not shown) and red light source 100R, green light source 100G, and blue light source 100B that are provided in the housing and emit red light, green light, and blue light, respectively. For convenience, red light source 100R, green light source 100G, and blue light source 100B are simplified in FIG. 9.

[0088] The projector 800 further includes, within the housing, a first optical element 802R, a second optical element 802G, a third optical element 802B, a first light modulation device 804R, a second light modulation device 804G, a third light modulation device 804B, and a projection device 808. The first light modulation device 804R, the second light modulation device 804G, and the third light modulation device 804B are, for example, transmissive liquid crystal light valves. The projection device 808 is, for example, a projection lens.

[0089] Light emitted from red light source 100R is incident on first optical element 802R. The light emitted from red light source 100R is collected by first optical element 802R. Note that first optical element 802R may have a function other than collecting light. The same applies to second optical element 802G and third optical element 802B, which will be described later.

[0090] The light collected by the first optical element 802R is incident on the first light modulation device 804R. The first light modulation device 804R modulates the incident light in accordance with image information. The projection device 808 then enlarges the image formed by the first light modulation device 804R and projects it onto a screen 810. Project onto.

[0091] The light emitted from green light source 100G is incident on second optical element 802G. The light emitted from green light source 100G is collected by second optical element 802G.

[0092] The light collected by the second optical element 802G is incident on the second light modulation device 804G. The second light modulation device 804G modulates the incident light in accordance with image information. The projection device 808 then enlarges the image formed by the second light modulation device 804G and projects it onto the screen 810.

[0093] The light emitted from blue light source 100B is incident on third optical element 802B. The light emitted from blue light source 100B is collected by third optical element 802B.

[0094] The light collected by the third optical element 802B enters the third light modulation device 804B. The third light modulation device 804B modulates the incident light in accordance with image information. The projection device 808 then enlarges the image formed by the third light modulation device 804B and projects it onto the screen 810.

[0095] The projector 800 may also have a cross dichroic prism 806 that combines the light emitted from the first light modulation device 804R, the second light modulation device 804G, and the third light modulation device 804B and guides the combined light to the projection device 808.

[0096] The three colored lights modulated by the first light modulation device 804R, the second light modulation device 804G, and the third light modulation device 804B enter the cross dichroic prism 806. The cross dichroic prism 806 is formed by bonding four right-angle prisms together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are disposed on its inner surface. These dielectric multilayer films combine the three colored lights to form light that represents a color image. The combined light is then projected onto a screen 810 by a projection device 808, and an enlarged image is displayed.

[0097] Note that red light source 100R, green light source 100G, and blue light source 100B may directly form an image without using first light modulation device 804R, second light modulation device 804G, and third light modulation device 804B, by controlling light emitting device 100 as pixels of the image in accordance with image information. Then, projection device 808 may enlarge and project the image formed by red light source 100R, green light source 100G, and blue light source 100B onto screen 810.

[0098] In the above example, a transmissive liquid crystal light valve is used as the light modulation device, but a light valve other than a liquid crystal light valve or a reflective light valve may also be used. Examples of such light valves include a reflective liquid crystal light valve and a digital micromirror device. The configuration of the projection device can be changed as appropriate depending on the type of light valve used.

[0099] The light source can also be applied to a light source device of a scanning type image display device having a scanning means which is an image forming device that displays an image of a desired size on a display surface by scanning light from the light source on a screen.

[0100] The light emitting devices according to the above-described embodiments can be used for applications other than projectors. Examples of applications other than projectors include indoor and outdoor lighting, displays, laser printers, scanners, in-vehicle lights, sensing devices that use light, light sources for communication devices, etc., and headlights. The light emitting device according to the above embodiment can also be applied to a light emitting element of an LED display that displays an image by arranging minute light emitting elements in an array.

[0101] The above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, the embodiments and modifications can be combined as appropriate.

[0102] The present invention includes configurations that are substantially the same as the configurations described in the embodiments, for example, configurations with the same functions, methods, and results, or configurations with the same purpose and effects. The present invention also includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. The present invention also includes configurations that achieve the same effects or purposes as the configurations described in the embodiments. The present invention also includes configurations in which publicly known technology is added to the configurations described in the embodiments.

[0103] The following can be derived from the above-described embodiment and modifications.

[0104] One aspect of the light emitting device is A substrate; a laminate provided on the substrate; a first electrode provided on the laminate opposite to the substrate; a second electrode provided on the opposite side of the first electrode from the substrate; and The laminate is a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and the first semiconductor layer is provided between the substrate and the light emitting layer, the first electrode comprises a plurality of pillars; the second electrode is connected to the plurality of columns; The first electrode is a transparent electrode made of a metal oxide that transmits light generated in the light-emitting layer.

[0105] According to this light emitting device, it is possible to reduce the resistance while reducing the amount of light that leaks to the second electrode and is absorbed by the second electrode.

[0106] In one embodiment of the light emitting device, The average refractive index of the laminate in a direction perpendicular to the stacking direction may be lower in a portion where the first electrode is provided than in a portion where the second semiconductor layer is provided.

[0107] This light emitting device can increase the optical confinement coefficient.

[0108] In one embodiment of the light emitting device, The first semiconductor layer, the second semiconductor layer, and the light emitting layer may form the plurality of columnar portions.

[0109] According to this light emitting device, a light emitting layer of high quality crystal can be obtained, and strain inherent in the light emitting layer can be reduced.

[0110] In one embodiment of the light emitting device, a first metal layer provided between the second semiconductor layer and the first electrode, the first metal layer transmitting light generated in the light emitting layer; The resistivity of the first metal layer may be lower than the resistivity of the first electrode.

[0111] According to this light emitting device, the contact resistance between the first metal layer and the second semiconductor layer can be reduced.

[0112] In one embodiment of the light emitting device, a second metal layer provided between the first electrode and the second electrode and transmitting light generated in the light-emitting layer; The resistivity of the second metal layer may be lower than the resistivity of the second electrode.

[0113] According to this light emitting device, the contact resistance between the first electrode and the second metal layer can be reduced.

[0114] In one embodiment of the light emitting device, The second electrode may be a transparent electrode made of a metal oxide that transmits light generated in the light-emitting layer.

[0115] According to this light emitting device, light can be emitted through the second electrode.

[0116] In one embodiment of the light emitting device, The resistivity of the second electrode may be lower than the resistivity of the first electrode.

[0117] According to this light emitting device, the resistance of the second electrode can be reduced.

[0118] One aspect of the projector is The light emitting device has one aspect. [Explanation of symbols]

[0119] 10...substrate, 20...laminated body, 22...buffer layer, 24...mask layer, 30...columnar portion, 30a...first columnar portion, 30b...second columnar portion, 32...first semiconductor layer, 34...light-emitting layer, 34a...first side surface, 34b...second side surface, 36...second semiconductor layer, 40...first electrode, 42...second electrode, 44...third electrode, 46...spacer electrode, 50...first metal layer, 52...second metal layer, 100, 200, 3 00, 400...light emitting device, 430...columnar portion assembly, 500...light emitting device, 534...optical waveguide, 800...projector, 802R...first optical element, 802G...second optical element, 802B...third optical element, 804R...first optical modulation device, 804G...second optical modulation device, 804B...third optical modulation device, 806...cross dichroic prism, 808...projection device, 810...screen

Claims

1. A substrate; a laminate provided on the substrate; a first electrode provided on the side of the laminate opposite to the substrate; a second electrode provided on the opposite side of the first electrode from the substrate; and The laminate is a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and the first semiconductor layer is provided between the substrate and the light emitting layer, the first electrode comprises a plurality of pillars; the second electrode is connected to the plurality of columns; the first electrode is a transparent electrode made of a metal oxide that transmits light generated in the light-emitting layer; a first metal layer provided between the second semiconductor layer and the first electrode, the first metal layer transmitting light generated in the light emitting layer; A light emitting device, wherein the resistivity of the first metal layer is lower than the resistivity of the first electrode.

2. In claim 1, a portion where the first electrode is provided having a lower average refractive index in a direction perpendicular to the stacking direction of the stacked body than a portion where the second semiconductor layer is provided;

3. In claim 1 or 2, The first semiconductor layer, the second semiconductor layer, and the light emitting layer constitute the plurality of columnar portions. A light-emitting device.

4. In any one of claims 1 to 3, a second metal layer provided between the first electrode and the second electrode and transmitting light generated in the light-emitting layer; A light emitting device, wherein the resistivity of the second metal layer is lower than the resistivity of the second electrode.

5. In any one of claims 1 to 4, The second electrode is a transparent electrode made of a metal oxide that transmits light generated in the light-emitting layer.

6. In any one of claims 1 to 3, A light emitting device, wherein the resistivity of the second electrode is lower than the resistivity of the first electrode.

7. A projector comprising the light emitting device according to claim 1 .

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