Substrate processing method and substrate processing apparatus

Abstract

To improve ununiformity in the results of processing of a substrate with respect to the circumferential direction of a mounting part.SOLUTION: A substrate processing method includes an exhausting step for exhausting a first space by an exhaust mechanism, which is configured to exhaust the first space via a gap by exhausting a second space in a processing container, or is configured to exhaust the first space in a state in which a seal gas is caused to flow from the second space to the first space via the gap; and a substrate processing step for processing a substrate while causing, by a driving mechanism configured to move a mounting part, a position of the mounting part to be changed such that the width of the gap becomes uniform on a time average basis.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Patent document 1 discloses a processing apparatus in which the interior of a processing vessel is divided into an upper processing space where substrate processing is performed and a lower bottom space by a mounting portion such as a stage on which a substrate is placed and a cover member. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-70906 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for improving the uniformity of the processing results of substrate processing in the circumferential direction of a mounting part. [Means for solving the problem]

[0005] A substrate processing method according to one aspect of the present disclosure is a substrate processing method using a substrate processing apparatus. The substrate processing apparatus includes a processing vessel, a mounting unit, an exhaust mechanism, and a drive mechanism. The mounting unit is disposed inside the processing vessel with a gap between the inner wall or a component constituting the processing vessel and the side of the processing vessel, and a substrate is mounted on the mounting unit. The mounting unit divides the interior of the processing vessel into an upper first space and a lower second space where substrate processing is performed on the substrate. The exhaust mechanism is configured to exhaust the second space to exhaust the first space through the gap, or to exhaust the first space while flowing a seal gas from the second space to the first space through the gap. The drive mechanism is configured to move the mounting unit. The substrate processing method includes an exhaust step and a substrate processing step. The exhaust step evacuates the first space using the exhaust mechanism. The substrate processing step performs substrate processing on the substrate while changing the position of the mounting unit using the drive mechanism so that the gap width is uniform on average over time. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to improve the uniformity of the processing results of substrate processing in the circumferential direction of the mounting part. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view showing an example of the configuration of a vacuum processing system according to an embodiment. [Figure 2] FIG. 2 is an exploded perspective view showing an example of the configuration of the vacuum processing apparatus according to the embodiment. [Figure 3] FIG. 3 is a plan view schematically showing the internal configuration of the vacuum processing apparatus according to the embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view showing an example of the configuration of a vacuum processing apparatus according to the embodiment. [Figure 5] FIG. 5 is a diagram illustrating an example of the configuration of the rotation drive mechanism and the adjustment mechanism according to the embodiment. [Figure 6] FIG. 6 is a diagram illustrating an example of the configuration of the absorption mechanism shown in FIG. [Figure 7]FIG. 7 is a diagram showing an example of a gas flow during substrate processing according to the embodiment. [Figure 8] FIG. 8 is a diagram showing another example of the gas flow during substrate processing according to the embodiment. [Figure 9] FIG. 9 is a diagram illustrating an example of a cause of non-uniform exhaust characteristics according to the embodiment. [Figure 10] FIG. 10 is a diagram illustrating an example of a change in the position of the placement unit according to the embodiment. [Figure 11] FIG. 11 is a diagram illustrating an example of a change in the direction of reciprocation of the placement unit according to the embodiment. [Figure 12] FIG. 12 is a diagram illustrating another example of a change in the placement position according to the embodiment. [Figure 13] FIG. 13 is a diagram illustrating another example of a change in the position of the mounting unit according to the embodiment. [Figure 14] FIG. 14 is a flowchart showing an example of the flow of the substrate processing method according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] The following describes in detail embodiments of a substrate processing method and a substrate processing apparatus disclosed herein with reference to the accompanying drawings. Note that the disclosed substrate processing method and substrate processing apparatus are not limited to the following embodiments.

[0009] Incidentally, some substrate processing apparatuses have a structure in which the periphery of a mounting section on which a substrate is placed serves as an exhaust path. For example, the processing apparatus disclosed in Patent Document 1 has a structure in which gaps are provided around the mounting section and exhaust ports are arranged, and a seal gas is flowed through the gaps while exhausting from the surrounding exhaust ports. Another example is a structure in which gaps are provided around the mounting section and exhaust is performed downward through the gaps.

[0010] When such an exhaust path is provided, the exhaust characteristics may become uneven in the circumferential direction of the mounting part due to the influence of the surrounding gap, causing bias in the gas flow and resulting in uneven substrate processing results in the circumferential direction of the mounting part. Therefore, a technology to improve the unevenness in the processing results of substrate processing in the circumferential direction of the mounting part is desired.

[0011] (Embodiment) [Vacuum processing system configuration] An example of a substrate processing apparatus according to the present disclosure will be described. In the embodiment described below, the substrate processing apparatus according to the present disclosure will be described as a vacuum processing system having a system configuration. FIG. 1 is a schematic plan view showing an example of the configuration of a vacuum processing system according to an embodiment. The vacuum processing system 1 has a load / unload port 11, a load / unload module 12, a vacuum transfer module 13, and a vacuum processing apparatus 2. In FIG. 1, the X direction is the left-right direction, the Y direction is the front-rear direction, and the Z direction is the up-down direction (height direction), and the load / unload port 11 is described as the front side in the front-rear direction. The load / unload port 11 is connected to the front side of the load / unload module 12, and the vacuum transfer module 13 is connected to the back side of the load / unload module 12, each facing in the front-rear direction.

[0012] A carrier C, which is a transfer container that accommodates a substrate to be processed, is placed in the transfer port 11. The substrate is a wafer W, which is a circular substrate having a diameter of, for example, 300 mm. The transfer module 12 is a module for transferring the wafer W between the carrier C and the vacuum transfer module 13. The transfer module 12 has an atmospheric pressure transfer chamber 121 in which the wafer W is transferred to and from the carrier C in an atmospheric pressure atmosphere by a transfer mechanism 120, and a load lock chamber 122 that switches the atmosphere in which the wafer W is placed between an atmospheric pressure atmosphere and a vacuum atmosphere.

[0013] The vacuum transfer module 13 has a vacuum transfer chamber 14 configured to maintain a vacuum atmosphere therein. A substrate transfer mechanism 15 is disposed inside the vacuum transfer chamber 14. The vacuum transfer chamber 14 is formed, for example, in a rectangular shape with long sides extending along the front-to-rear direction in a plan view. Of the four side walls of the vacuum transfer chamber 14, opposing long sides of the rectangle are connected to multiple (e.g., three) vacuum processing devices 2. Of the four side walls of the vacuum transfer chamber 14, a load lock chamber 122 installed in the load-in / out module 12 is connected to the short side on the front side. Gate valves G are disposed between the atmospheric pressure transfer chamber 121 and the load lock chamber 122, between the load lock chamber 122 and the vacuum transfer module 13, and between the vacuum transfer module 13 and the vacuum processing device 2. The gate valves G open and close the wafer W loading / unloading ports provided in each of the modules connected to each other.

[0014] Substrate transfer mechanism 15 transfers wafers W between load / unload module 12 and vacuum processing apparatus 2 in a vacuum atmosphere. Substrate transfer mechanism 15 is made up of an articulated arm and has a substrate holder 16 that holds wafers W. Vacuum processing apparatus 2 performs substrate processing using a processing gas on multiple (e.g., four) wafers W all at once in a vacuum atmosphere. For this reason, substrate holder 16 of substrate transfer mechanism 15 is configured to be able to hold, for example, four wafers W so that four wafers W can be delivered to vacuum processing apparatus 2 all at once.

[0015] Specifically, the substrate transfer mechanism 15 has, for example, a base 151, a first arm 152 extending horizontally, a second arm 153 extending horizontally, and a substrate holder 16. The base side of the first arm 152 is provided on the base 151 and rotates around a vertical rotation axis on the base 151. The base side of the second arm 153 is provided on the tip end of the first arm 152 and rotates around a vertical rotation axis on the tip end of the first arm 152. The substrate holder 16 has a first substrate holder 161, a second substrate holder 162, and a connection part 163. The first substrate holder 161 and the second substrate holder 162 are configured as two elongated spatula-like members extending horizontally in parallel to each other. The connecting portion 163 extends horizontally so as to be perpendicular to the extension direction of the first and second substrate holding portions 161, 162, and connects the base ends of the first and second substrate holding portions 161, 162 to each other. The central portion of the connecting portion 163 in the longitudinal direction is provided on the tip end of the second arm 153, and it rotates around a vertical rotation axis on the tip end of the second arm 153. The first substrate holding portion 161 and the second substrate holding portion 162 will be described later.

[0016] The vacuum processing system 1 has a control unit 8. The control unit 8 is, for example, a computer including a processor, a memory unit, an input device, a display device, etc. The control unit 8 controls each unit of the vacuum processing system 1. The control unit 8 allows an operator to input commands using the input device to manage the vacuum processing system 1. The control unit 8 can also visualize and display the operating status of the vacuum processing system 1 using the display device. Furthermore, the memory unit of the control unit 8 stores control programs and recipe data for controlling various processes performed in the vacuum processing system 1 by the processor. The processor of the control unit 8 executes the control program and controls each unit of the vacuum processing system 1 according to the recipe data, thereby performing the desired substrate processing in the vacuum processing system 1.

[0017] [Configuration of vacuum processing device 2] Next, the vacuum processing apparatus 2 will be described with reference to FIGS. 2 to 4. In the following, the vacuum processing apparatus 2 is assumed to be a film formation apparatus that performs a film formation process, and the description will be centered on a case where the vacuum processing apparatus 2 performs a film formation process such as a plasma CVD (Chemical Vapor Deposition) process on a wafer W as a substrate process. FIG. 2 is an exploded perspective view showing an example of the configuration of the vacuum processing apparatus 2 according to the embodiment. FIG. 3 is a plan view schematically showing the internal configuration of the vacuum processing apparatus 2 according to the embodiment.

[0018] The six vacuum processing apparatuses 2 are similarly configured. The six vacuum processing apparatuses 2 can process wafers W in parallel. The vacuum processing apparatus 2 includes a processing vessel (vacuum vessel) 20 that is rectangular in plan view. The processing vessel 20 is configured to be able to maintain a vacuum atmosphere inside. The processing vessel 20 includes a vessel body 202 having a recessed opening on the top surface, the opening of which is closed by a ceiling member 201. The processing vessel 20 has, for example, four sidewalls 203 surrounding the periphery of the processing vessel 20. Of the four sidewalls 203, the sidewall 203 connected to the vacuum transfer chamber 14 has two load / unload ports 21 formed side by side in the front-to-rear direction (Y' direction in FIG. 2). The load / unload ports 21 are opened and closed by a gate valve G.

[0019] As shown in FIGS. 2 and 3, the processing vessel 20 includes a first transfer space T1 and a second transfer space T2, which extend horizontally from the loading / unloading ports 21 and are adjacent to each other and through which wafers W are transferred. An intermediate wall 3 is provided between the first transfer space T1 and the second transfer space T2 in the processing vessel 20 along the extension direction (the X' direction in FIG. 2). Two processing spaces S1 and S2 are arranged in the first transfer space T1 along the extension direction, and two processing spaces S3 and S4 are arranged in the second transfer space T2 along the extension direction. Therefore, a total of four processing spaces S1 to S4 are arranged in a 2x2 matrix when viewed from above within the processing vessel 20. The horizontal direction here includes a slight tilt in the extension direction due to manufacturing tolerances or the like, as long as there is no influence from devices contacting each other during the loading / unloading operation of the wafer W.

[0020] FIG. 4 is a schematic cross-sectional view showing an example of the configuration of a vacuum processing apparatus 2 according to an embodiment. The cross section of FIG. 4 corresponds to the cross section of the vacuum processing apparatus 2 taken along line AA in FIG. 3. Each of the four processing spaces S1 to S4 is formed between a mounting part 22 on which a wafer W is mounted and a gas supply part 4 arranged opposite the mounting part 22. The four processing spaces S1 to S4 have the same configuration. In other words, the mounting part 22 and the gas supply part 4 are provided for each of the four processing spaces S1 to S4 within the processing vessel 20. FIG. 4 shows the processing space S1 of the first transfer space T1 and the processing space S4 of the second transfer space T2. The processing space S1 will be described below as an example.

[0021] The mounting unit 22, which also serves as the lower electrode, is formed in a flat cylindrical shape and made of, for example, metal or aluminum nitride (AlN) with an embedded metal mesh electrode. The mounting unit 22 is configured to be movable by a drive mechanism 80. The drive mechanism 80 includes a rotation drive mechanism 600 and an adjustment mechanism 700. The mounting unit 22 is supported from below by a support member 23. The support member 23 is formed in a cylindrical shape, extends vertically downward, and penetrates the bottom 27 of the processing vessel 20. The lower end of the support member 23 is located outside the processing vessel 20 and connected to the rotation drive mechanism 600. The support member 23 is rotatable by the rotation drive mechanism 600 around the support member 23 as a rotation axis. The mounting unit 22 is configured to be rotatable in response to the rotation of the support member 23. In addition, an adjustment mechanism 700 is provided at the lower end of the support member 23 to adjust the position and tilt of the mounting unit 22. The mounting part 22 is configured to be movable up and down between the processing position and the transfer position by the adjustment mechanism 700 via the support member 23. In Fig. 4, the mounting part 22 at the processing position is depicted by a solid line, and the mounting part 22 at the transfer position is depicted by a dashed line. The processing position is a position at which a substrate process (e.g., a film formation process) is performed, and the transfer position is a position at which the wafer W is transferred to and from the substrate transfer mechanism 15. The rotation drive mechanism 600 and the adjustment mechanism 700 will be described later.

[0022] A heater 24 is embedded in the mounting portion 22. The heater 24 heats each wafer W mounted on the mounting portion 22 to, for example, about 60° C. to 600° C. The mounting portion 22 is connected to a ground potential.

[0023] The mounting portion 22 is provided with a plurality of (e.g., three) pin through holes 26a, and a lifter pin 26 is disposed inside each of these pin through holes 26a. The pin through holes 26a are provided to penetrate from the mounting surface (top surface) of the mounting portion 22 to the back surface (bottom surface) opposite the mounting surface. The lifter pins 26 are slidably inserted into the pin through holes 26a. The upper ends of the lifter pins 26 are suspended from the mounting surface side of the pin through holes 26a. That is, the upper ends of the lifter pins 26 have a larger diameter than the pin through holes 26a. The upper ends of the pin through holes 26a are formed with recesses that are larger in diameter and thickness than the upper ends of the lifter pins 26 and can accommodate the upper ends of the lifter pins 26. As a result, the upper ends of the lifter pins 26 are engaged with the mounting portion 22 and suspended from the mounting surface side of the pin through holes 26a. The lower ends of the lifter pins 26 protrude from the rear surface of the mounting portion 22 toward the bottom 27 of the processing vessel 20 .

[0024] 4, when the mounting unit 22 is raised to the processing position, the upper ends of the lifter pins 26 are housed in the recesses on the mounting side of the pin through holes 26a. When the mounting unit 22 is lowered from this state to the transfer position, the lower ends of the lifter pins 26 abut against the bottom 27 of the processing vessel 20, and the lifter pins 26 move within the pin through holes 26a until the upper ends of the lifter pins 26 protrude from the mounting surface of the mounting unit 22. Note that the processing vessel 20 may be provided with lifter pin abutment members on the bottom side, and the lower ends of the lifter pins 26 may abut against the lifter pin abutment members, and the lifter pins 26 may be raised and lowered by the lifter pin abutment member moving up and down.

[0025] Here, the first and second substrate holding units 161 and 162 will be described. The first substrate holding unit 161 is configured to hold the wafer W at a position corresponding to each of the processing spaces S1 and S2 in the first transfer space T1 when the first substrate holding unit 161 is inserted into the first transfer space T1. The positions corresponding to each of the processing spaces S1 and S2 in the first transfer space T1 are positions set so that the wafer W can be transferred to the two mounting units 22 provided in the processing spaces S1 and S2 of the first transfer space T1. The second substrate holding unit 162 is configured to hold the wafer W at a position corresponding to each of the processing spaces S3 and S4 in the second transfer space T2 when the second substrate holding unit 162 is inserted into the second transfer space T2. The positions corresponding to each of the processing spaces S3 and S4 in the second transfer space T2 are positions set so that the wafer W can be transferred to the two mounting units 22 provided in the processing spaces S3 and S4 of the second transfer space T2.

[0026] For example, the width of each of the first and second substrate holding parts 161, 162 is formed to be smaller than the diameter of the wafer W. The first and second substrate holding parts 161, 162 each support two wafers W with a gap between them on their tip and base ends. The wafers W supported on the tip ends of the first and second substrate holding parts 161, 162 have, for example, their central portions supported by the tips of the first and second substrate holding parts 161, 162.

[0027] In this way, the substrate transport mechanism 15, the lifter pins 26, and the mounting portions 22 cooperate to simultaneously transfer, for example, four wafers W between the substrate transport mechanism 15 and each mounting portion 22.

[0028] A gas supply unit 4 is provided on the ceiling member 201 of the processing vessel 20. The gas supply unit 4 is provided above the mounting unit 22 via a guide member 34 made of an insulating member. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 includes a lid 42, a shower plate 43 that forms an opposing surface facing the mounting surface of the mounting unit 22, and a gas flow chamber 44 formed between the lid 42 and the shower plate 43. A gas supply pipe 51 is connected to the lid 42. The shower plate 43 has gas discharge holes 45 that penetrate through the thickness direction and are arranged, for example, vertically and horizontally. The shower plate 43 discharges gas from each gas discharge hole 45 toward the mounting unit 22 in a shower-like manner.

[0029] Each gas supply unit 4 is connected to a gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes supply sources of, for example, a reactive gas (film forming gas) which is a processing gas, a purge gas, and a cleaning gas, as well as piping, a valve V, a flow rate adjustment unit M, and the like.

[0030] A high-frequency power supply 41 is connected to the shower plate 43 via a matching box 40. The shower plate 43 functions as an upper electrode facing the mounting part 22. When high-frequency power is applied from the high-frequency power supply 41 between the shower plate 43 as the upper electrode and the mounting part 22 as the lower electrode, the gas (for example, a reactive gas in this example) supplied from the shower plate 43 to the processing space S1 is converted into plasma due to capacitive coupling.

[0031] Next, the exhaust paths and the confluent exhaust path formed in the middle wall 3 will be described. As shown in Figures 3 and 4, the middle wall 3 is formed with exhaust paths 31 provided for each of the four processing spaces S1 to S4, and a confluent exhaust path 32 where these exhaust paths 31 converge. The confluent exhaust path 32 extends in the vertical direction within the middle wall 3. The middle wall 3 is composed of a wall main body 311 provided on the vessel main body 202 side, and an exhaust path forming member 312 provided on the ceiling member 201 side. The exhaust path 31 is provided inside the exhaust path forming member 312.

[0032] Further, an exhaust port 33 is formed in the wall surface of the intermediate wall 3 located on the outer side of each of the processing spaces S1 to S4 for each of the processing spaces S1 to S4. Each exhaust path 31 is formed in the intermediate wall 3 so as to connect the exhaust port 33 to the confluent exhaust path 32. For example, each exhaust path 31 extends horizontally within the intermediate wall 3, then bends downward to extend vertically and connects to the confluent exhaust path 32. For example, the exhaust path 31 has a circular cross section (see FIG. 3), and the downstream end of each exhaust path 31 is connected to the upstream end of the confluent exhaust path 32. The upstream side of each exhaust path 31 opens to the outside of each of the processing spaces S1 to S4 as an exhaust port 33.

[0033] An exhaust guide member 34 is provided around each of the processing spaces S1 to S4 so as to surround the processing space S1 to S4. The guide member 34 is, for example, an annular body provided so as to surround the area around the mounting unit 22 at the processing position with a gap therebetween. The guide member 34 has, for example, a rectangular cross section therein and is configured to form an annular flow path 35 in a plan view. FIG. 3 schematically shows the processing spaces S1 to S4, the guide member 34, the exhaust path 31, and the confluent exhaust path 32.

[0034] 4, the guide member 34 has, for example, a U-shaped cross section and is disposed with the opening of the U facing downward. The guide member 34 is fitted into recesses 204 formed on the intermediate wall 3 and side wall 203 of the container body 202. The guide member 34 forms a flow path 35 between itself and the members constituting the intermediate wall 3 and side wall 203.

[0035] The guide member 34 fitted into the recess 204 forms a slit-shaped slit exhaust port 36 that opens toward the processing spaces S1 to S4. In this way, the slit exhaust port 36 is formed along the circumferential direction on the side periphery of each of the processing spaces S1 to S4. The exhaust port 33 is connected to the communication flow path 35, and the processing gas exhausted from the slit exhaust port 36 flows toward the exhaust port 33.

[0036] Focus will be given on a pair of two processing spaces S1 and S2 arranged along the extension direction of the first transfer space T1 and a pair of two processing spaces S3 and S4 arranged along the extension direction of the second transfer space T2. As shown in FIG. 3, the pairs of processing spaces S1-S2 and S3-S4 are arranged with 180° rotational symmetry around the confluent exhaust path 32 when viewed from above.

[0037] As a result, the process gas flow paths from each of the process spaces S1 to S4 to the confluent exhaust path 32 via the slit exhaust ports 36, the flow paths 35 of the guide member 34, the exhaust ports 33, and the exhaust path 31 are formed with 180-degree rotational symmetry around the confluent exhaust path 32. Note that, if we ignore the positional relationships with the first and second transfer spaces T1, T2 and the intermediate wall portion 3 and focus only on the process gas flow paths, it can also be said that these flow paths are formed with 90-degree rotational symmetry around the confluent exhaust path 32 when viewed from above.

[0038] The confluent exhaust path 32 is connected to an exhaust pipe 61 via a confluent exhaust port 205 formed in the bottom 27 of the processing vessel 20. The exhaust pipe 61 is connected to a vacuum pump 62 constituting a vacuum exhaust mechanism via a valve mechanism 7. One vacuum pump 62 is provided for each processing vessel 20, for example (see FIG. 1), and the exhaust pipes 61 downstream of the respective vacuum pumps 62 are joined together and connected to, for example, a factory exhaust system.

[0039] The valve mechanism 7 opens and closes a process gas flow path formed in the exhaust pipe 61. The valve mechanism 7 has, for example, a casing 71 and an opening / closing unit 72. A first opening 73 connected to the upstream exhaust pipe 61 is formed on the top surface of the casing 71. A second opening 74 connected to the downstream exhaust pipe 61 is formed on the side surface of the casing 71.

[0040] The opening / closing unit 72 includes, for example, an opening / closing valve 721 and an elevating mechanism 722. The opening / closing valve 721 is sized to close the first opening 73. The elevating mechanism 722 is provided outside the casing 71 and moves the opening / closing valve 721 up and down within the casing 71. The opening / closing valve 721 is configured to be freely raised and lowered between a closed position shown by a dashed line in FIG. 4 where it closes the first opening 73 and an open position shown by a solid line in FIG. 4 where it is retracted below the first and second openings 73 and 74. When the opening / closing valve 721 is in the closed position, the downstream end of the combined exhaust port 205 is closed, and exhausting of the processing vessel 20 is stopped. When the opening / closing valve 721 is in the open position, the downstream end of the combined exhaust port 205 is opened, and the processing vessel 20 is exhausted.

[0041] Next, the process gas supply system will be described with reference to FIG. 2. The following description will be given taking the case where two types of reactive gases are used as an example. A gas supply pipe 51 is connected to approximately the center of the upper surface of each gas supply unit 4. The gas supply pipe 51 is connected by a first gas supply pipe 511 to a first reactive gas supply source 541 and a purge gas supply source 55 via a first common gas supply path 521. The gas supply pipe 51 is also connected by a second gas supply pipe 512 to a second reactive gas supply source 542 and a purge gas supply source 55 via a second common gas supply path 522. For convenience, in FIG. 4, the first common gas supply path 521 and the second common gas supply path 522 are collectively referred to as the gas supply path 52. The first reactive gas supply source 541 and the second reactive gas supply source 542 are collectively referred to as the reactive gas supply source 54. The first gas supply pipe 511 and the second gas supply pipe 512 are collectively shown as a gas supply pipe 510. Valve V2 and flow rate adjuster M2 are for supplying a reactive gas, and valve V3 and flow rate adjuster M3 are for supplying a purge gas.

[0042] The gas supply pipe 51 is connected to a cleaning gas supply source 53 via a cleaning gas supply path 532 and a remote plasma unit (RPU) 531. The cleaning gas supply path 532 branches into four systems downstream of the RPU 531, and each system is connected to the gas supply pipe 51. A valve V1 and a flow rate regulator M1 are provided upstream of the RPU 531 on the cleaning gas supply path 532. Valves V11 to V14 are provided downstream of the RPU 531 for each of the branched pipes. During cleaning, the corresponding valves V11 to V14 are opened. For convenience, only the valves V11 and V14 are shown in FIG. 4. The gas supply system 50 supplies various gases used in film formation. For example, when forming an insulating oxide film (SiO2) by CVD, tetraethoxysilane (TEOS) or oxygen (O2) gas is used as the reactive gas, and an inert gas such as nitrogen (N2) gas is used as the purge gas. When TEOS and O2 gas are used as the reactive gas, for example, TEOS is supplied from a first reactive gas supply source 541, and O2 gas is supplied from a second reactive gas supply source 542. Furthermore, nitrogen trifluoride (NF3) gas is used as the cleaning gas.

[0043] From the perspective of the process gas distributed from the common gas supply path 52, each process gas path from each gas supply pipe 51 to the gas supply unit 4 is formed so that its conductance is the same. For example, as shown in FIG. 2, the downstream side of the first common gas supply path 521 branches into two systems, and the branched gas supply path further branches into two systems to form first gas supply pipes 511 in a tournament shape. The first gas supply pipes 511 are connected to the gas supply pipes 51 downstream of the cleaning gas valves V11 to V14. Furthermore, the downstream side of the second common gas supply path 522 branches into two systems, and the branched gas supply path further branches into two systems to form second gas supply pipes 512 in a tournament shape. The second gas supply pipes 512 are connected to the gas supply pipes 51 downstream of the cleaning gas valves V11 to V14.

[0044] The first gas supply pipes 511 are formed so that the lengths and inner diameters from their upstream ends (the ends connected to the first common gas supply path 521) to their downstream ends (the ends connected to the gas supply unit 4 or the gas supply pipes 51) are the same among the first gas supply pipes 511. The second gas supply pipes 512 are formed so that the lengths and inner diameters from their upstream ends (the ends connected to the second common gas supply path 522) to their downstream ends are the same among the second gas supply pipes 512. In this way, when viewed from the processing gas distributed from the first common gas supply path 521, the processing gas paths from the first gas supply pipes 511, the gas supply unit 4, the processing spaces S1 to S4, and the exhaust path 31 to the junction exhaust path 32 are formed so that the conductances are the same among the processing gas paths. Furthermore, from the perspective of the processing gas distributed from the second common gas supply path 522, each processing gas path from the second gas supply pipe 512, the gas supply unit 4, the processing spaces S1 to S4, and the exhaust path 31 to the confluent exhaust path 32 is formed so that the conductances of each path are the same.

[0045] The vacuum processing apparatus 2 is connected to a control unit 8 of the vacuum processing system 1. The control unit 8 is, for example, a computer including a processor, a memory, a storage unit, etc. The control unit 8 controls each unit of the vacuum processing apparatus 2. The control unit 8 allows an operator to input commands using an input device to manage the vacuum processing apparatus 2. The control unit 8 can also visualize and display the operating status of the vacuum processing apparatus 2 using a display device. Furthermore, the storage unit of the control unit 8 stores a control program and recipe data for controlling various processes performed by the vacuum processing apparatus 2 using a processor. The processor of the control unit 8 executes the control program and controls each unit of the vacuum processing apparatus 2 according to the recipe data, thereby performing the desired process in the vacuum processing apparatus 2. For example, the control unit 8 controls each unit of the vacuum processing apparatus 2 to perform substrate processes such as etching and film formation on a substrate loaded into the vacuum processing apparatus 2.

[0046] [Configuration of rotation drive mechanism and adjustment mechanism] 5 is a diagram showing an example of the configuration of a rotation drive mechanism 600 and an adjustment mechanism 700 according to an embodiment. A hole 27a is formed in the bottom 27 of the processing vessel 20 at a position corresponding to the position for supporting the mounting unit 22. A support member 23 that supports the mounting unit 22 from below is inserted into the hole 27a. A rotation drive mechanism 600 is connected to a lower end 23a of the support member 23 located outside the processing vessel 20.

[0047] The rotary drive mechanism 600 includes a rotary shaft 610 , a motor 620 , and a vacuum seal 630 .

[0048] The rotating shaft 610 is connected to the lower end 23a of the support member 23 and is configured to be rotatable integrally with the support member 23. A slip ring 621 is provided at the lower end of the rotating shaft 610. The slip ring 621 has electrodes and is electrically connected to various wiring for supplying power to components around the mounting unit 22. For example, the slip ring 621 is electrically connected to wiring for supplying power to the heater 24 embedded in the mounting unit 22. Furthermore, for example, if an electrostatic chuck for electrostatically attracting the wafer W is provided on the mounting unit 22, the slip ring 621 is electrically connected to wiring for applying a DC voltage to the electrostatic chuck.

[0049] The motor 620 is connected to the rotary shaft 610 and rotates the rotary shaft 610. When the rotary shaft 610 rotates, the mounting unit 22 rotates via the support member 23. When the rotary shaft 610 rotates, the slip ring 621 also rotates together with the rotary shaft 610, but electrical connections between the slip ring 621 and various wiring for supplying power to components around the mounting unit 22 are maintained.

[0050] The vacuum seal 630 is, for example, a magnetic fluid seal. The vacuum seal 630 is provided around the rotating shaft 610 and can maintain the rotation of the rotating shaft 610 while sealing the rotating shaft 610 airtightly.

[0051] Furthermore, an adjustment mechanism 700 is engaged with the lower end portion 23a of the support member 23 via a vacuum seal 630.

[0052] The adjustment mechanism 700 includes a base member 710, a plurality of (for example, six) actuators 720, an absorption mechanism 730, and a bellows 740.

[0053] The base member 710 is engaged with the lower end 23a of the support member 23 located outside the processing vessel 20 via a vacuum seal 630, and is configured to be movable integrally with the mounting unit 22. For example, the base member 710 is formed with a hole 711 having a diameter larger than the lower end 23a of the support member 23. The support member 23 passes through the hole 711, and the lower end 23a is connected to the rotation shaft 610. The vacuum seal 630 is provided around the rotation shaft 610 connected to the lower end 23a of the support member 23, and the base member 710 is fixed to an upper surface of the vacuum seal 630. As a result, the base member 710 is connected to the mounting unit 22 via the vacuum seal 630, the rotation shaft 610, the support member 23, etc., and can be moved integrally with the mounting unit 22.

[0054] The actuators 720 are arranged in parallel with one another between the bottom 27 of the processing vessel 20 and the base member 710. The actuators 720 adjust the position and inclination of the mounting unit 22 by moving the base member 710 relative to the bottom 27 of the processing vessel 20. Each of the actuators 720 is extendable and rotatably connected to the base member 710 via a universal joint, and is also rotatably connected to the bottom 27 of the processing vessel 20 via a universal joint. The actuators 720 and the base member 710 form a parallel link mechanism that can move the base member 710 in the X', Y', and Z' axis directions, as shown in FIG. 5 , and in rotational directions around the X' axis, the Y' axis, and the Z' axis. The movement coordinate system of the parallel link mechanism formed by the actuators 720 and the base member 710 is pre-adjusted to coincide with the coordinate system of the processing vessel 20. The parallel link mechanism connects the bottom 27 of the processing vessel 20 and the base member 710, allowing the actuators 720 to move the base member 710 relative to the bottom 27 of the processing vessel 20. This allows the position and tilt of the mounting unit 22 to be adjusted. For example, the actuators 720 adjust the position of the mounting unit 22 by moving the base member 710 in a direction perpendicular to the outer wall surface of the bottom 27 of the processing vessel 20 (e.g., the Z'-axis direction in FIG. 5). Furthermore, for example, the actuators 720 adjust the position of the mounting unit 22 by moving the base member 710 in a direction along the outer wall surface of the bottom 27 of the processing vessel 20 (e.g., the X'-axis and Y'-axis directions in FIG. 5). Furthermore, for example, the multiple actuators 720 adjust the inclination of the mounting portion 22 by tilting the base member 710 in a predetermined direction (for example, the direction of rotation around the X' axis and the direction of rotation around the Y' axis in Figure 5) relative to the outer wall surface of the bottom 27 of the processing vessel 20.

[0055] The position and tilt of the mounting unit 22 adjusted by the multiple actuators 720 can be determined by detecting the position and tilt of the base member 710 using various detection means. Examples of the detection means include a linear encoder, a gyro sensor, a three-axis acceleration sensor, and a laser tracker.

[0056] In the vacuum processing apparatus 2, when the pressure inside the processing vessel 20 is switched from atmospheric pressure to vacuum, the processing vessel 20 is deformed due to the pressure difference. The processing vessel 20 is also deformed due to the temperature change caused by the heat transmitted from the substrate processing performed in the processing vessel 20. When the processing vessel 20 is deformed, stress due to the deformation of the processing vessel 20 is transmitted to the mounting part 22, which may cause the position or tilt of the mounting part 22 to change.

[0057] Therefore, in the vacuum processing apparatus 2 according to this embodiment, a plurality of actuators 720 are provided between the bottom 27 of the processing vessel 20 and a base member 710 that is movable integrally with the mounting unit 22. The actuators 720 adjust the position and inclination of the mounting unit 22 by moving the base member 710 relative to the bottom 27. This allows the position and inclination of the mounting unit 22 to be adjusted back to their original position and inclination even if the position and inclination of the mounting unit 22 change due to deformation of the processing vessel 20. As a result, the vacuum processing apparatus 2 according to this embodiment can improve the position and inclination of the mounting unit 22 due to deformation of the processing vessel 20, thereby improving the in-plane uniformity of substrate processing, such as film formation.

[0058] The absorbing mechanism 730 is provided on the bottom 27 of the processing vessel 20 and absorbs deformation of the bottom of the processing vessel 20. The absorbing mechanism 730 has a hole 731 that communicates with the interior of the processing vessel 20 via the hole 27a in the bottom 27 of the processing vessel 20. The actuators 720 are connected to the absorbing mechanism 730 without being directly connected to the bottom 27 of the processing vessel 20. As a result, even if the bottom 27 of the processing vessel 20 is deformed, the stress caused by the deformation of the bottom 27 of the processing vessel 20 is absorbed by the absorbing mechanism 730 and is not transmitted to the actuators 720, thereby preventing a decrease in the adjustment accuracy of the position and tilt of the mounting unit 22. The absorbing mechanism 730 will be described in detail later.

[0059] The bellows 740 is disposed to surround the periphery of the support member 23. The bellows 740 has an upper end that passes through a hole 731 formed in the absorbing mechanism 730 and is connected to the bottom 27 of the processing vessel 20, and a lower end that is connected to the base member 710. As a result, the bellows 740 airtightly seals the space between the bottom 27 of the processing vessel 20 and the base member 710. The bellows 740 is configured to be expandable and contractable in response to movement of the base member 710. For example, when the base member 710 moves in a direction perpendicular to the outer wall surface of the bottom 27 of the processing vessel 20 (e.g., the Z'-axis direction in FIG. 5), the bellows 740 expands and contracts in the Z'-axis direction. Furthermore, when the base member 710 moves in a direction along the outer wall surface of the bottom 27 of the processing vessel 20 (e.g., the X'-axis and Y'-axis directions in FIG. 5), the bellows 740 expands and contracts in the X'-axis and Y'-axis directions. Furthermore, for example, when base member 710 moves in a predetermined direction (for example, the direction of rotation about the X'-axis and the direction of rotation about the Y'-axis in FIG. 5) relative to the outer wall surface of bottom 27 of processing vessel 20, bellows 740 expands and contracts in the direction of rotation about the X'-axis and the direction of rotation about the Y'-axis. In vacuum processing apparatus 2, bellows 740 expands and contracts even when base member 710 is moved, so that air does not flow into processing vessel 20 through the space between bottom 27 of processing vessel 20 and base member 710, holes 731, and holes 27a.

[0060] Here, an example of the configuration of the absorbing mechanism 730 will be described with reference to Fig. 6. Fig. 6 is a diagram showing an example of the configuration of the absorbing mechanism 730 shown in Fig. 5. The absorbing mechanism 730 has a plate member 732 and a rod member 733.

[0061] The plate member 732 is formed in a disk shape and is disposed below the bottom 27 of the processing vessel 20. The plate member 732 is disposed at a distance from the outer wall surface of the bottom 27 of the processing vessel 20 in order to block the transmission of heat and vibration from the processing vessel 20.

[0062] One end of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing vessel 20, and the other end is rotatably and slidably connected to the plate member 732. That is, a recess 27b is formed in the outer wall surface of the bottom 27 of the processing vessel 20, and a spherical bearing 27c that is rotatably and slidably attached to the recess 27b. One end 733a of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing vessel 20 by being connected to the spherical bearing 27c. Meanwhile, a recess 732a is formed in the upper surface of the plate member 732 at a position corresponding to the recess 27b, and a spherical bearing 732b that is rotatably and slidably attached to the recess 732a. The other end 733b of the rod member 733 is rotatably and slidably connected to the plate member 732 by being connected to the spherical bearing 732b. The rod member 733 rotates in a direction corresponding to the deformation of the bottom 27 of the processing vessel 20, thereby suppressing the transmission of the deformation to the plate member 732. For example, when the bottom 27 of the processing vessel 20 deforms in the direction of the arrow in Fig. 6, the rod member 733 receives stress due to the deformation of the bottom 27, but rotates together with the bottom 27 in the direction of the arrow in Fig. 6 to suppress the transmission of the deformation to the plate member 732. The multiple actuators 720 are connected to the plate member 732. This prevents the stress due to the deformation of the bottom 27 of the processing vessel 20 from being transmitted to the multiple actuators 720 via the plate member 732, thereby suppressing a decrease in the adjustment accuracy of the position and tilt of the mounting unit 22.

[0063] Furthermore, the rod members 733 are arranged at a plurality of positions in the circumferential direction of the plate member 732. For example, three rod members 733 are provided at equal intervals at a plurality of positions inside the edge along the circumferential direction of the plate member 732. Four or more rod members 733 may be provided at equal intervals along the circumferential direction of the plate member 732.

[0064] Next, a flow of performing a film forming process on a wafer W by the vacuum processing system 1 according to the embodiment will be briefly described.

[0065] The control unit 8 controls the substrate transfer mechanism 15 to transfer the wafer W toward the vacuum processing apparatus 2. The control unit 8 calculates the amount of deviation of the wafer W when it is transferred by the substrate transfer mechanism 15 as a correction amount for the position of the wafer W. The calculation of the correction amount for the position of the wafer W is performed, for example, by using a position detection sensor provided at an arbitrary position on the transfer path of the wafer W to detect the amount of deviation between the wafer W and a target position for transfer by the substrate transfer mechanism 15. The position detection sensor is provided, for example, in the vacuum transfer chamber 14 in which the substrate transfer mechanism 15 is disposed. The position detection sensor may also be provided at the load / unload port 21 of the vacuum processing apparatus 2. The target position is the placement position of the wafer W on the placement unit 22, for example, a position where the center of the placement unit 22 and the center of the wafer W coincide with each other.

[0066] The control unit 8 controls the multiple actuators 720 so that the base member 710 moves by the calculated correction amount from a predetermined reference position. The reference position is a position where the center of the mounting unit 22 raised to the processing position should be located. For example, the reference position is a position where the center of the mounting unit 22 coincides with the center of the shower plate 43 (for example, the center of the area where the gas ejection holes 45 are formed). The reference position is determined, for example, when the vacuum processing apparatus 2 is designed or adjusted.

[0067] As the base member 710 moves, the mounting unit 22 similarly moves by the correction amount from the reference position. Furthermore, the control unit 8 controls the multiple actuators 720 so that the base member 710 moves downward together with the mounting unit 22 (i.e., in the negative direction of the Z' axis in FIG. 5). This causes the mounting unit 22 to start descending. As the mounting unit 22 moves downward, the lower ends of the lifter pins 26 come into contact with the bottom 27 of the processing vessel 20, and the upper ends protrude from the mounting surface of the mounting unit 22. At this stage, the mounting unit 22 has been lowered from the processing position to the transfer position.

[0068] When the substrate transfer mechanism 15 reaches the vacuum processing apparatus 2, the control unit 8 controls the substrate transfer mechanism 15 to transfer the wafer W to above the target position in the processing vessel 20. At this stage, the center of the mounting portion 22 and the center of the wafer W are aligned.

[0069] The control unit 8 transfers the wafer W between the mounting unit 22 and the substrate transfer mechanism 15. For example, the control unit 8 controls the multiple actuators 720 so that the base member 710 moves to a reference position. For example, the control unit 8 controls the multiple actuators 720 so that the base member 710 moves upward together with the mounting unit 22 (i.e., in the positive direction of the Z' axis in FIG. 5). This starts the lifting of the mounting unit 22. As the mounting unit 22 moves upward, the lower ends of the lifter pins 26 move away from the bottom 27 of the processing vessel 20, and the upper ends of the lifter pins 26 are retracted into the mounting surface side of the pin through holes 26a. As the base member 710 moves, the mounting unit 22 similarly moves to the reference position. At this stage, the center of the mounting unit 22, the center of the wafer W, and the reference position all coincide on a plane.

[0070] In this way, in vacuum processing apparatus 2, instead of moving substrate transfer mechanism 15 by the correction amount, base member 710 and mounting section 22 are moved integrally by the correction amount to transfer wafer W. This reduces the transfer load on substrate transfer mechanism 15. As a result, the throughput of the entire vacuum processing system 1 can be improved.

[0071] The control unit 8 transfers wafers W in parallel to the four processing spaces S1 to S4 in the processing vessel 20 of each vacuum processing apparatus 2. As a result, if the substrate transfer mechanism 15 transfers the four wafers W collectively to the four processing spaces S1 to S4 in the processing vessel 20, the wafers W can be transferred collectively between the mounting unit 22 and the substrate transfer mechanism 15. As a result, the throughput of the entire vacuum processing system 1 can be further improved.

[0072] The control unit 8 performs a film formation process on the wafers W in the four processing spaces S1 to S4 for each vacuum processing device 2. For example, the control unit 8 controls the lifting mechanism 722 and the vacuum pump 62 to open the on-off valve 721 and reduce the pressure inside the processing chamber 20 using the vacuum pump 62. The control unit 8 controls the gas supply system 50 to supply various gases used for film formation from the gas supply system 50 and introduce the various gases into the processing spaces S1 to S4 from each gas supply unit 4. The control unit 8 also rotates the mounting unit 22 using the drive mechanism 80. For example, the control unit 8 controls the rotation drive mechanism 600 to rotate the mounting unit 22 around the support member 23 supporting the mounting unit 22 as the rotation axis, thereby rotating the mounting unit 22. The control unit 8 also controls the high-frequency power supplies 41 to supply high-frequency power from the high-frequency power supplies 41 to generate plasma in the processing spaces S1 to S4 and perform a film formation process on the wafers W. If necessary, the control unit 8 may rotate the mounting unit 22. Alternatively, the control unit 8 may perform a film forming process on the wafer W while the mounting unit 22 is stopped and not rotated.

[0073] 7 is a diagram showing an example of gas flows during substrate processing according to the embodiment. Fig. 7 shows an example of gas flows in four processing spaces S1 to S4 in the processing vessel 20 when a film formation process is performed as the substrate processing. The following description will be given taking processing space S1 as an example.

[0074] The processing vessel 20 has a mounting part 22 disposed therein on which a wafer W is placed, and a gas supply part 4 disposed opposite the mounting part 22. A processing space S1 is formed between the mounting part 22 and the gas supply part 4. When the driving mechanism 80 sets the mounting part 22 to a processing position, the mounting part 22 divides the interior of the processing vessel 20 into upper processing spaces S1 to S4 where a film formation process is performed on the wafer W, and lower spaces U1 to U4. In FIG. 7, the interior of the processing vessel 20 is divided by the mounting part 22 into an upper processing space S1 and a lower lower space U1.

[0075] The processing vessel 20 is provided with a guide member 34 for exhaust around the mounting portion 22. The guide member 34 is provided to surround the mounting portion 22, for example, at the processing position, with a gap 90 between the mounting portion 22 and the guide member 34. The guide member 34 has a slit exhaust port 36 formed on its side surface facing the processing space S1. The guide member 34 has a flow path 35 formed therein, which communicates with the exhaust port 33. The exhaust port 33 communicates with a vacuum pump 62. When the vacuum pump 62 exhausts the gas, the gas supplied to the processing space S1 flows from the slit exhaust port 36 of the guide member 34 to the flow path 35 and is then exhausted from the exhaust port 33 to the vacuum pump 62. The vacuum processing apparatus 2 according to the embodiment can supply a seal gas to the lower space U1 via a gas supply pipe (not shown). The seal gas may be the same as the purge gas or may be a different gas. For example, an inert gas such as nitrogen (N2) gas is used as the seal gas. The source of the seal gas supplied to the lower space U1 may be the gas supply system 50 or a separate gas supply system.

[0076] When performing a film formation process, the vacuum processing apparatus 2 according to the embodiment supplies a seal gas to the lower space U1 and causes the seal gas to flow from the lower space U1 to the processing space S1 through the gap 90. The vacuum processing apparatus 2 also performs exhaust using the vacuum pump 62 and exhausts the processing space S1 from around the mounting unit 22 using the guide member 34. The vacuum processing apparatus 2 then supplies various gases used for film formation from the gas supply unit 4 to the processing space S1. By exhausting the processing space S1 through the guide member 34 while causing the seal gas to flow from the lower space U1 to the processing space S1 through the gap 90, it is possible to prevent the gas supplied from the gas supply unit 4 to the processing space S1 from flowing into the lower space U1 through the gap 90.

[0077] In the present embodiment, the vacuum processing apparatus 2 is configured to evacuate the processing space S1 from around the mounting portion 22 using the guide member 34 while allowing the seal gas to flow from the lower space U1 to the processing space S1 through the gap 90. However, this is not limiting. The vacuum processing apparatus 2 may also be configured to evacuate the processing space S1 through the gap 90 by evacuating the lower space U1 of the processing vessel 20.

[0078] 8 is a diagram showing another example of gas flows during substrate processing according to the embodiment. FIG. 8 shows another example of gas flows in the four processing spaces S1 to S4 in the processing vessel 20 when a film formation process is performed as the substrate processing. The following description will be given taking the processing space S1 as an example.

[0079] The processing vessel 20 has a mounting part 22 disposed therein on which a wafer W is placed, and a gas supply part 4 disposed opposite the mounting part 22. A processing space S1 is formed between the mounting part 22 and the gas supply part 4. By setting the mounting part 22 to a processing position by the driving mechanism 80, the interior of the processing vessel 20 is divided by the mounting part 22 into an upper processing space S1 where a film formation process is performed on the wafer W, and a lower space U1.

[0080] The processing vessel 20 has a gap 90 between the mounting portion 22 and the inner wall. For example, the processing vessel 20 has an inner wall that surrounds the mounting portion 22 at the processing position, with the gap 90 provided around the mounting portion 22.

[0081] The processing vessel 20 has an exhaust port 91 at the bottom 27. The exhaust port 91 is connected to an exhaust system such as a vacuum pump via an exhaust pipe 92. In the processing vessel 20 shown in FIG. 8, the processing space S1 can be exhausted through the gap 90 by evacuating the lower space U1 from the exhaust port 91 using a vacuum pump.

[0082] 8, when performing a film formation process, the vacuum processing apparatus 2 evacuates the processing space S1 through the gap 90 by evacuating the lower space U1 from the exhaust port 91 using a vacuum pump. Then, the vacuum processing apparatus 2 supplies various gases used for film formation from the gas supply unit 4 to the processing space S1.

[0083] 7 and 8 , the gap 90 around the mounting portion 22 may cause uneven exhaust characteristics in the circumferential direction of the mounting portion 22, resulting in uneven gas flow and uneven film formation results in the circumferential direction of the mounting portion 22. FIG. 9 illustrates an example of a cause of uneven exhaust characteristics according to the embodiment. FIG. 9 shows a top view of the mounting portion 22. The mounting portion 22 has a circular upper surface. A wafer W is placed on the upper surface of the mounting portion 22. The mounting portion 22 has a gap 90 around its periphery. In the configuration shown in FIG. 7 , the gap 90 is formed between the inner surface of the guide member 34 and the mounting portion 22, through which a seal gas flows. In the configuration shown in FIG. 8 , the gap 90 is formed between the inner surface of the processing chamber 20 and the mounting portion 22, through which exhaust gas flows. As shown in FIG. 9 , if the position of the mounting portion 22 is slightly misaligned, the clearance of the gap 90 becomes non-uniform in the circumferential direction. When the clearance of the gap 90 is non-uniform in the circumferential direction, the gas flow becomes non-uniform in the circumferential direction on the upper surface of the mounting portion 22, making it difficult to achieve uniform film formation. For example, in the configuration shown in FIG. 7 , the flow of seal gas increases in areas with large clearance and decreases in areas with small clearance. As a result, the gas flow becomes non-uniform on the upper surface of the mounting portion 22, making it difficult to achieve uniform film formation in the circumferential direction. Furthermore, in the configuration shown in FIG. 8 , the exhaust flow increases in areas with large clearance and decreases in areas with small clearance. As a result, the gas flow becomes non-uniform on the upper surface of the mounting portion 22, making it difficult to achieve uniform film formation in the circumferential direction.

[0084] Therefore, in this embodiment, during the film formation process, the control unit 8 performs the film formation process on the wafer W while changing the position of the mounting unit 22 using the driving mechanism 80 so that the width of the gap 90 becomes uniform on average over time. The method for changing the position of the mounting unit 22 may be any method as long as it can reduce the non-uniformity of the width of the gap 90 on average over time.

[0085] For example, the control unit 8 causes the drive mechanism 80 to reciprocate the mounting unit 22 in the horizontal direction and rotate the reciprocating movement direction within a horizontal plane, while performing a film formation process on the wafer W. FIG. 10 is a diagram illustrating an example of a change in the position of the mounting unit 22 according to this embodiment. FIG. 10 shows the change in the position of the mounting unit 22 over time. In FIG. 10, the vertical direction is defined as the Y direction, and the horizontal direction is defined as the X direction. The arrow extending from the center of the mounting unit 22 indicates the movement direction of the mounting unit 22. For example, the control unit 8 causes the drive mechanism 80 to move the mounting unit 22 upward (positive Y direction) and then downward (negative Y direction). As a result, the mounting unit 22 reciprocates in the Y direction, as shown in (1) of FIG. 10. The control unit 8 causes the mounting unit 22 to reciprocate in the horizontal direction while rotating the reciprocating movement direction of the mounting unit 22 by an angle θ. For example, the control unit 8 rotates the reciprocating movement direction by an angle θ every time the mounting unit 22 reciprocates an integer number of times. The timing for rotating the angle θ may be the timing when the mounting unit 22 reciprocates an integer number, such as 1.5 or 2.5 times, plus 0.5. FIG. 11 is a diagram illustrating an example of a change in the reciprocating movement direction of the mounting unit 22 according to the embodiment. For example, the control unit 8 changes the reciprocating movement direction of the mounting unit 22 in order from (1) to (8). This makes the width of the gap 90 uniform on average over time, thereby improving the non-uniformity of the film thickness in the circumferential direction of the mounting unit 22.

[0086] Furthermore, for example, the control unit 8 performs a film formation process on the wafer W while moving the mounting unit 22 in a horizontal plane using the drive mechanism 80 so that the center point of the mounting unit 22 draws a circle in the horizontal plane. FIG. 12 is a diagram illustrating another example of a change in the position of the mounting unit 22 according to the embodiment. FIG. 12 shows a change in the position of the mounting unit 22 over time. In FIG. 12, the vertical direction is defined as the Y direction, and the horizontal direction is defined as the X direction. For example, the control unit 8 moves the mounting unit 22 in a horizontal plane using the drive mechanism 80 so that the center point of the mounting unit 22 draws a circle in the horizontal plane around a predetermined central position. The central position may be a reference position such as the center of the processing spaces S1 to S4 in the horizontal plane or the center of the shower plate 43 (e.g., the center of the region where the gas ejection holes 45 are formed), or may be a predetermined position in the processing vessel 20. FIG. 13 is a diagram illustrating another example of a change in the position of the mounting unit 22 according to the embodiment. 13 shows a locus TL along which the center point of the mounting portion 22 moves. The locus TL describes a circle with a radius R. The radius R is, for example, approximately 1 mm to 2 mm at most. This makes the width of the gap 90 uniform on average over time, thereby improving the non-uniformity of the film thickness in the circumferential direction of the mounting portion 22.

[0087] The speed at which the mounting section 22 is moved by the driving mechanism 80 is preferably 1 mm / sec or less, which prevents the wafer W from slipping on the mounting section 22. Furthermore, the gas flow on the top surface of the wafer W can be made to follow the movement of the mounting section 22, allowing for stable film formation processing on the wafer W.

[0088] The control unit 8 controls the drive mechanism 80 during the film formation process, and the drive mechanism 80 repeatedly moves the mounting unit 22 multiple times. For example, the control unit 8 sets the film formation time to 10 minutes and performs a series of moving operations of the mounting unit 22 10 times during the film formation time. In this case, the operation time for one cycle is 1 minute, which is a very slow speed.

[0089] In the above embodiment, the clearance of the gap 90 is not uniform in the circumferential direction, resulting in a bias in the gas flow on the upper surface of the mounting unit 22. However, this is not limiting. For example, even if the clearance of the gap 90 is uniform in the circumferential direction, a bias in the gas flow on the upper surface of the mounting unit 22 may occur if the exhaust characteristics around the mounting unit 22 are biased. For example, the vacuum processing apparatus 2 exhausts the processing space S1 from the periphery of the mounting unit 22 using the guide member 34. The flow path 35 of the guide member 34 communicates with the exhaust port 33 at one point. In this case, the exhaust characteristics around the mounting unit 22 may be strong on the exhaust port 33 side and weak on the opposite side of the exhaust port 33, resulting in a bias in the exhaust characteristics around the mounting unit 22. Furthermore, deformation of the processing vessel 20 due to heat, vacuum, or the like may also result in a bias in the exhaust characteristics around the mounting unit 22. Even in such cases, during the film formation process, the driving mechanism 80 can change the position of the support portion 22 so that the width of the gap 90 becomes uniform on average over time, thereby improving the unevenness of the film thickness around the circumferential direction of the support portion 22.

[0090] [Specific example of substrate processing flow] Next, a specific example of the flow of the substrate processing method according to the embodiment will be described. Fig. 14 is a flowchart showing an example of the flow of the substrate processing method according to the embodiment. Fig. 14 shows an example of the flow of performing a film formation process as the substrate processing.

[0091] The control unit 8 evacuates the processing space S1 of the processing vessel 20 (step S10). For example, in the case of the configuration shown in Fig. 7, the control unit 8 evacuates the processing space S1 from around the mounting part 22 using the guide member 34 while causing a seal gas to flow from the lower space U1 to the processing space S1 through the gap 90 using the vacuum pump 62. Furthermore, in the case of the configuration shown in Fig. 8, for example, the control unit 8 evacuates the processing space S1 through the gap 90 by evacuating the lower space U1 from the exhaust port 91 using the vacuum pump.

[0092] The control unit 8 performs a film formation process on the wafer W while changing the position of the mounting unit 22 using the drive mechanism 80 so that the width of the gap 90 becomes uniform on a time average (step S11). For example, as shown in FIGS. 10 and 11 , the control unit 8 performs a film formation process on the wafer W while causing the driving mechanism 80 to move the mounting unit 22 back and forth in the horizontal direction and rotate the mounting unit 22 in the direction of the back and forth movement within the horizontal plane. Furthermore, as shown in FIGS. 12 and 13 , the control unit 8 performs a film formation process on the wafer W while causing the driving mechanism 80 to move the mounting unit 22 within the horizontal plane so that the center point of the mounting unit 22 draws a circle within the horizontal plane.

[0093] This allows the vacuum processing apparatus 2 to improve the non-uniformity of the processing result of the film forming process in the circumferential direction of the mounting portion 22.

[0094] (Effects of the embodiment) As described above, the substrate processing method according to the embodiment is a substrate processing method for a substrate processing apparatus (e.g., vacuum processing system 1 or vacuum processing apparatus 2). The substrate processing apparatus includes a processing vessel 20, a mounting unit 22, an exhaust mechanism (e.g., vacuum pump 62), and a drive mechanism 80. The mounting unit 22 is disposed inside the processing vessel 20 with a gap 90 between the side surface and the inner wall of the processing vessel 20 or a component constituting the processing vessel 20 (a component is a part that is provided separately from the inner wall of the processing vessel 20 and essentially constitutes a wall surface in place of the inner wall), and a wafer W is mounted on the mounting unit 22. The mounting unit 22 divides the interior of the processing vessel 20 into an upper first space (e.g., processing spaces S1 to S4) where substrate processing is performed on the wafer W, and a lower second space (e.g., lower spaces U1 to U4). The exhaust mechanism is configured to exhaust the first space through the gap 90 by exhausting the second space, or to exhaust the first space while allowing a seal gas to flow from the second space to the first space through the gap 90. The drive mechanism 80 is configured to be able to move the mounting unit 22. The substrate processing method includes an exhaust step (e.g., step S10) and a substrate processing step (e.g., step S11). The exhaust step evacuates the first space by the exhaust mechanism. The substrate processing step performs substrate processing on the wafer W while changing the position of the mounting unit 22 by the drive mechanism 80 so that the width of the gap 90 becomes uniform on average over time. As a result, the substrate processing method according to the embodiment can improve non-uniformity in the processing results of the substrate processing in the circumferential direction of the mounting unit 22.

[0095] Furthermore, in the substrate processing step of the substrate processing method according to the embodiment, the mounting unit 22 is moved back and forth in the horizontal direction by the driving mechanism 80, and the mounting unit 22 is moved so as to rotate in the horizontal plane in the direction of the reciprocating movement, while the substrate processing is performed on the wafer W. As a result, the substrate processing method according to the embodiment can reduce unevenness in the width of the gap 90 on average over time, thereby improving unevenness in the processing results of the substrate processing in the circumferential direction of the mounting unit 22.

[0096] Furthermore, in the substrate processing method according to the embodiment, in the substrate processing step, the driving mechanism 80 moves the mounting unit 22 so that the direction of reciprocation rotates a predetermined angle every time the mounting unit 22 reciprocates an integer number of times, while performing substrate processing on the wafer W. As a result, the substrate processing method according to the embodiment can uniformize the width of the gap 90 on average over time, thereby improving the non-uniformity of the processing results of the substrate processing in the circumferential direction of the mounting unit 22.

[0097] Furthermore, in the substrate processing step, the substrate processing method according to the embodiment moves the mounting portion 22 in a horizontal plane using the drive mechanism 80 so that the center point of the mounting portion 22 describes a circle in the horizontal plane, while performing substrate processing on the wafer W. As a result, the substrate processing method according to the embodiment can make the width of the gap 90 uniform on average over time, thereby improving the non-uniformity of the processing results of the substrate processing in the circumferential direction of the mounting portion 22.

[0098] Furthermore, in the substrate processing method according to the embodiment, during the substrate processing step, the drive mechanism 80 repeatedly performs a moving operation to change the position of the mounting unit 22 multiple times. As a result, the substrate processing method according to the embodiment can reduce unevenness in the width of the gap 90 even during a part of the substrate processing period, such as the first half or second half, and can therefore improve unevenness in the processing results of the substrate processing in the circumferential direction of the mounting unit 22 even when the substrate processing is not uniform between the first half and second half.

[0099] Furthermore, in the substrate processing method according to the embodiment, during the substrate processing step, the mounting unit 22 is moved by the drive mechanism 80 at a moving speed of 1 mm / sec or less. This prevents the substrate from slipping on the mounting unit 22. Furthermore, in the substrate processing method according to the embodiment, the gas flow on the top surface of the substrate can follow the movement of the mounting unit 22, allowing stable substrate processing to be performed on the substrate.

[0100] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the claims.

[0101] For example, in the above embodiment, the vacuum processing apparatus 2 is described as an apparatus that performs a film formation process as a substrate process. However, this is not limited to this. The substrate process may be, for example, an etching process such as plasma etching, or any other substrate process. The disclosed technology may be applied to any apparatus that performs other substrate processes such as plasma etching.

[0102] In the above embodiment, the substrate is a wafer W, but the present invention is not limited to this. The substrate may be any substrate, such as a glass substrate. The mounting portion does not refer to the mounting portion 22 alone, but may include a cover member that is provided separately from the mounting portion 22 and that covers the outer periphery of the mounting portion 22. [Explanation of symbols]

[0103] 1. Vacuum Processing System 2. Vacuum processing equipment 8 Control Unit 20 Processing container 22 Placement section 23 Support member 62 Vacuum pump 80 Drive mechanism 90 Gap 600 Rotational Drive Mechanism 700 Adjustment mechanism 710 Base material 720 Actuator W wafer S1~S4 Processing space U1~U4 Lower space

Claims

1. A processing vessel; a mounting part that is disposed inside the processing vessel with a gap between an inner wall or a component constituting the processing vessel and a side surface of the processing vessel, the mounting part having a substrate mounted thereon and dividing the interior of the processing vessel into an upper first space and a lower second space where substrate processing is performed on the substrate; an exhaust mechanism configured to exhaust the first space through the gap by exhausting the second space, or configured to exhaust the first space in a state where a seal gas is caused to flow from the second space to the first space through the gap; a drive mechanism configured to be able to move the placement unit; A substrate processing method for a substrate processing apparatus having an exhaust step of exhausting the first space by the exhaust mechanism; a substrate processing step of performing substrate processing on the substrate while changing the position of the substrate placement unit by the driving mechanism so that the width of the gap becomes uniform on a time average during the substrate processing; A substrate processing method comprising:

2. The substrate processing step involves performing substrate processing on the substrate while the drive mechanism reciprocates the placement unit in a horizontal direction and rotates the placement unit in a horizontal plane. The substrate processing method according to claim 1 .

3. In the substrate processing step, the driving mechanism moves the placement unit so that the direction of reciprocation rotates by a predetermined angle every time the placement unit reciprocates an integer number of times, while performing substrate processing on the substrate. The substrate processing method according to claim 2 .

4. The substrate processing step includes performing substrate processing on the substrate while moving the substrate placement unit in a horizontal plane so that the center point of the substrate placement unit draws a circle in the horizontal plane by the driving mechanism. The substrate processing method according to claim 1 .

5. During the substrate processing, the substrate processing step repeatedly performs a moving operation of changing the position of the placement unit by a driving mechanism.

5. The substrate processing method according to claim 1.

6. During the substrate processing, the substrate placement unit is moved by a driving mechanism at a moving speed of 1 mm / sec or less.

6. The substrate processing method according to claim 1.

7. the drive mechanism is configured to rotate the placement unit by rotating a support member that supports the placement unit around a rotation axis, The substrate processing step performs substrate processing on the substrate by rotating the substrate placement unit while changing the position of the substrate placement unit.

7. The substrate processing method according to claim 1.

8. In the substrate processing step, the substrate processing is performed on the substrate while changing the position of the mounting unit in a state where a support member supporting the mounting unit is stopped and not rotated about a rotation axis.

7. The substrate processing method according to claim 1.

9. the drive mechanism allows the placement unit to move in three orthogonal axial directions and in rotational directions around the three axes by having a plurality of actuators function as a parallel link mechanism; 9. The substrate processing method according to claim 1.

10. A processing vessel; a mounting part that is disposed inside the processing vessel with a gap between an inner wall or a component constituting the processing vessel and a side surface of the processing vessel, the mounting part having a substrate mounted thereon and dividing the interior of the processing vessel into an upper first space and a lower second space where substrate processing is performed on the substrate; an exhaust mechanism configured to exhaust the first space through the gap by exhausting the second space, or configured to exhaust the first space in a state where a seal gas is caused to flow from the second space to the first space through the gap; a drive mechanism configured to be able to move the placement unit; a control unit that controls the driving mechanism to change the position of the mounting unit so that the gap width becomes uniform on a time average during the substrate processing, and to perform the substrate processing on the substrate; A substrate processing apparatus having:

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