Substrate Processing System

Abstract

To provide a substrate processing system which has higher efficiency.SOLUTION: A substrate processing system 100 comprises one or more substrate processing devices 10, a heat pump device 20, a heating circulation path 30, a process liquid supply path 31, a refrigerant circulation path 21, and a cooling liquid supply path 41. Each of the substrate processing devices 10 supplies process liquid to a substrate so as to process the substrate. The heat pump device 20 heats the process liquid. The heating circulation path 30 returns, to the heat pump device 20, the process liquid from the heat pump device 20. The process liquid supply path 31 branches from the heating circulation path 30, and it supplies the process liquid to the substrate processing devices 10. The refrigerant circulation path 21 returns, to the heat pump device 20, the cooling liquid cooled by the heat pump device 20. The cooling liquid supply path 41 branches from the cooling circulation path 21, and it supplies the cooling liquid to the substrate processing devices 10.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing system. [Background technology]

[0002] Conventionally, temperature control devices have been provided for simultaneously adjusting the temperatures of multiple loads in a factory (for example, Patent Document 1). In Patent Document 1, the temperature control device includes a heating-side circulation pipe that passes through the load, a cooling-side circulation pipe that passes through the load, and a heat pump. The heat pump includes a heat-generating core (heat exchanger) and a heat-absorbing core (heat exchanger). The heat-generating core heats the liquid flowing through the heating-side circulation pipe, and the heat-absorbing core cools the liquid flowing through the cooling-side circulation pipe.

[0003] The liquid heated by the heat generating core flows through the circulation pipe on the heating side and heats the load to be heated, and the liquid cooled by the heat absorbing core flows through the circulation pipe on the cooling side and cools the load to be cooled.

[0004] Furthermore, Patent Documents 2 to 5 are listed as technologies related to the present disclosure. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-287865 [Patent Document 2] Japanese Patent Application Laid-Open No. 2002-246359 [Patent Document 3] Japanese Patent Application Publication No. 11-87300 [Patent Document 4] Patent Publication No. 2021-9956 [Patent Document 5] Japanese Patent Application Laid-Open No. 2015-113523 Summary of the Invention [Problem to be solved by the invention]

[0006] A highly efficient substrate processing system is desired.

[0007] Therefore, an object of the present disclosure is to provide a more efficient substrate processing system. [Means for solving the problem]

[0008] A first aspect of the substrate processing system includes one or more substrate processing devices that supply processing liquid to substrates to process the substrates, a heat pump device that heats the processing liquid, a heating circulation path that returns the processing liquid from the heat pump device to the heat pump device, a processing liquid supply path that branches off from the heating circulation path and supplies the processing liquid to the substrate processing device, a cooling circulation path that returns coolant cooled by the heat pump device to the heat pump device, and a coolant supply path that branches off from the cooling circulation path and supplies the coolant to the substrate processing device.

[0009] A second aspect of the substrate processing system is the substrate processing system according to the first aspect, further comprising a heater that heats the processing liquid flowing through the processing liquid supply path.

[0010] A third aspect of the substrate processing system is the substrate processing system according to the second aspect, wherein the heater includes a heat pump.

[0011] A fourth aspect of the substrate processing system is the substrate processing system according to the second or third aspect, further comprising a control unit that receives information about the substrate and causes the heater to start a heating operation.

[0012] A fifth aspect of the substrate processing system is a substrate processing system according to any one of the first to fourth aspects, wherein the heat pump device includes a heat exchanger connected to the heating circulation path and formed from a thermally conductive resin, and the substrate processing system further includes a refrigerant concentration sensor that measures the concentration of refrigerant in the heating circulation path.

[0013] A sixth aspect of the substrate processing system is a substrate processing system according to any one of the first to fifth aspects, further comprising a discharge path through which waste liquid from the substrate processing apparatus flows, and a heat retention unit that keeps the heating circulation path warm with the waste liquid supplied from the discharge path.

[0014] A seventh aspect of the substrate processing system is a substrate processing system according to any one of the first to sixth aspects, further comprising a cooling unit upstream of the cooling liquid supply path and downstream of the heat pump device for cooling the cooling liquid flowing through the cooling circulation path.

[0015] An eighth aspect of the substrate processing system is a substrate processing system according to the seventh aspect, further comprising a discharge path for flowing waste liquid from the substrate processing apparatus, and a waste liquid cooling unit for cooling the waste liquid in the cooling circulation path or a branch path branching off from the cooling circulation path. [Effects of the Invention]

[0016] According to the first aspect of the substrate processing system, the heat pump device heats the processing liquid, so that the processing liquid can be heated more efficiently and supplied to the substrate processing apparatus. Moreover, the cooling liquid that is the object of cooling by the heat pump device is used to cool the equipment of the substrate processing apparatus. This allows the cooling energy of the heat pump device to be utilized, thereby improving the efficiency of the substrate processing system.

[0017] According to the second aspect of the substrate processing system, the heater can heat the processing liquid at a position closer to the substrate processing apparatus than the heat pump device, so that the processing liquid whose temperature has been adjusted with higher accuracy can be supplied to the substrate processing apparatus.

[0018] According to the third aspect of the substrate processing system, the efficiency of the substrate processing system can be further improved.

[0019] According to the fourth aspect of the substrate processing system, the processing liquid supply path can be preheated.

[0020] According to the fifth aspect of the substrate processing system, the concentration of the refrigerant in the processing liquid can be monitored.

[0021] According to the sixth aspect of the substrate processing system, the heat of the waste liquid can be effectively utilized, thereby further improving the efficiency of the substrate processing system.

[0022] According to the seventh aspect of the substrate processing system, a cooling unit separate from the heat pump device is also provided, so that the coolant can be cooled independently of the heat pump device, thereby widening the range of adjustment of the coolant temperature.

[0023] According to the eighth aspect of the substrate processing system, the temperature of the waste liquid can be quickly reduced. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a first embodiment. [Figure 2] FIG. 1 is a diagram schematically illustrating an example of a configuration of a substrate processing apparatus. [Figure 3] FIG. 10 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a modified example. [Figure 4] 10 is a flowchart illustrating an example of heater start control. [Figure 5] FIG. 10 is a diagram schematically illustrating an example of the configuration of a heater according to a second embodiment. [Figure 6] FIG. 10 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a second embodiment. [Figure 7] 10 is a flowchart showing an example of monitoring control of the refrigerant concentration in the treatment liquid. [Figure 8] FIG. 10 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a third embodiment. [Figure 9] FIG. 2 is a diagram schematically illustrating an example of the configuration of a substrate processing apparatus and a heat retention unit. [Figure 10]10 is a flowchart showing an example of discharge control of waste liquid. [Figure 11] FIG. 10 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a fourth embodiment. [Figure 12] FIG. 2 is a diagram schematically illustrating an example of the configuration of a waste liquid cooling unit. [Figure 13] FIG. 10 is a diagram schematically illustrating another example of the configuration of the waste liquid cooling unit. DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, embodiments will be described with reference to the accompanying drawings. Note that the components described in the embodiments are merely examples and are not intended to limit the scope of the present disclosure. In the drawings, the dimensions or number of each part may be exaggerated or simplified as necessary for ease of understanding.

[0026] Unless otherwise specified, expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) not only indicate that positional relationship exactly, but also indicate a state where there is a relative displacement in terms of angle or distance within a range where tolerance or equivalent functionality is obtained. Expressions indicating an equal state (e.g., "identical," "equal," "homogeneous," etc.) not only indicate a state where there is strict quantitative equality, but also indicate a state where there is a difference where tolerance or equivalent functionality is obtained, unless otherwise specified. Expressions indicating shape (e.g., "square shape" or "cylindrical shape") not only indicate that shape strictly geometrically, but also indicate a shape with, for example, concaves and convexes or chamfers within a range where equivalent effects are obtained, unless otherwise specified. The expressions "comprise," "include," "have," "includes," "includes," or "have" of one component are not exclusive expressions that exclude the presence of other components. The expression "at least one of A, B, and C" includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0027] First Embodiment <Configuration of substrate processing system> 1 is a diagram schematically illustrating an example of the configuration of a substrate processing system 100. The substrate processing system 100 includes one or more substrate processing apparatuses 10, a heat pump device 20, a heating circulation path 30, a processing liquid supply path 31, and a processing liquid replenishment unit 60.

[0028] As will be described in detail later, the substrate processing apparatus 10 is an apparatus that performs processing on a substrate W. The substrate W includes various substrates such as semiconductor substrates, substrates for displays, substrates for photomasks, and substrates for magnetic disks or optical disks. In the example of FIG. 1, a plurality of substrate processing apparatuses 10 are provided in the substrate processing system 100. In the example of FIG. 1, substrate processing apparatuses 10A and 10B are shown as examples of the substrate processing apparatuses 10. The substrate processing apparatuses 10A and 10B supply processing liquids to the substrates W to perform processing on the substrates W, as will be described later.

[0029] The heat pump unit 20 is a device that heats the treatment liquid flowing through the heating circulation path 30. The heating circulation path 30 is a flow path through which the treatment liquid heated by the heat pump unit 20 flows back toward the heat pump unit 20. In other words, the heating circulation path 30 is a circulation flow path for returning the treatment liquid from the heat pump unit 20 back to the heat pump unit 20.

[0030] The heat pump device 20 includes a refrigerant circulation path 21, a heating heat exchanger 22, a cooling heat exchanger 23, a compressor 24, and an expansion valve 25. The refrigerant circulation path 21 is a flow path that circulates a refrigerant, and is mainly composed of piping. The refrigerant is, for example, a carbon dioxide refrigerant or an ammonia refrigerant. The refrigerant circulation path 21 is provided with the heat exchanger 22, the heat exchanger 23, the compressor 24, and the expansion valve 25.

[0031] Compressor 24 has a suction port and a discharge port, compresses the low-temperature, low-pressure refrigerant drawn in through the suction port, and discharges the compressed high-temperature, high-pressure refrigerant from the discharge port. The high-temperature, high-pressure refrigerant from compressor 24 flows through refrigerant circulation path 21 toward heat exchanger 22 and flows into heat exchanger 22.

[0032] The heat exchanger 22 exchanges heat between the refrigerant and the treatment liquid. Specifically, the heat exchanger 22 includes a refrigerant flow path 221 through which the refrigerant flows and a treatment liquid flow path 222 through which the treatment liquid flows. The upstream end of the treatment liquid flow path 222 is connected to the downstream end of the heating circulation path 30, and the downstream end of the treatment liquid flow path 222 is connected to the upstream end of the heating circulation path 30. The heating circulation path 30 is mainly composed of piping. A pump (not shown) may be provided in the heating circulation path 30. The pump delivers the treatment liquid through the heating circulation path 30. As a result, the treatment liquid flows and circulates through the heating circulation path 30 and the treatment liquid flow path 222. The treatment liquid is not particularly limited, but may be, for example, pure water.

[0033] The heat exchanger 22 exchanges heat between the refrigerant flowing through the refrigerant flow path 221 and the treatment liquid flowing through the treatment liquid flow path 222. Specifically, heat is transferred from the high-temperature, high-pressure refrigerant to the treatment liquid in the heat exchanger 22. As a result, the refrigerant is cooled and liquefied, while the treatment liquid is heated.

[0034] A portion of the processing liquid heated by the heat pump device 20 is supplied to each substrate processing apparatus 10 (specifically, the substrate processing apparatus 10A and the substrate processing apparatus 10B) through a processing liquid supply path 31 branched from the heating circulation path 30, as described below.

[0035] The refrigerant from heat exchanger 22 flows through refrigerant circuit 21 toward expansion valve 25. The refrigerant expands in expansion valve 25. The expanded low-temperature, low-pressure refrigerant flows through refrigerant circuit 21 toward heat exchanger 23 and flows into heat exchanger 23.

[0036] A refrigerant flow path 231 through which a refrigerant flows is formed within the heat exchanger 23. In the example of FIG. 1, a coolant flow path 232 through which a coolant flows is also formed within the heat exchanger 23. In the example of FIG. 1, the upstream end of the coolant flow path 232 is connected to the downstream end of the cooling circulation path 40, and the downstream end of the coolant flow path 232 is connected to the upstream end of the cooling circulation path 40. The cooling circulation path 40 is a flow path through which the coolant cooled by the heat pump device 20 flows back toward the heat pump device 20. In other words, the cooling circulation path 40 is a circulation path for returning the coolant from the heat pump device 20 to the heat pump device 20. The cooling circulation path 40 is mainly composed of piping. A pump (not shown) may be provided in the cooling circulation path 40. The pump sends the coolant through the cooling circulation path 40. As a result, the coolant flows and circulates through the cooling circulation path 40 and the coolant flow path 232. The coolant is not particularly limited, but may be, for example, pure water.

[0037] Heat exchanger 23 exchanges heat between the refrigerant flowing through refrigerant flow path 231 and the cooling liquid flowing through cooling liquid flow path 232. Specifically, heat is transferred from the cooling liquid to the refrigerant in heat exchanger 23. As a result, the refrigerant is heated and vaporized, while the cooling liquid is cooled. Note that the amount of heat transferred from the cooling liquid to the refrigerant in heat exchanger 23 is ideally equal to the amount of heat transferred from the refrigerant to the treatment liquid in heat exchanger 22.

[0038] In the example of Figure 1, a portion of the cooling liquid cooled by the heat pump device 20 is supplied to each substrate processing apparatus (specifically, substrate processing apparatus 10C and substrate processing apparatus 10D described below) through a cooling liquid supply path 41 branched from the cooling circulation path 40, as described below.

[0039] The heat exchangers 22 and 23 are made of, for example, a thermally conductive resin. Examples of the thermally conductive resin that can be used include polypropylene and polyethylene. The thermal conductivity of the material that makes up the heat exchangers 22 and 23 is preferably higher than the thermal conductivity of the material of the piping that forms any of the refrigerant circulation path 21, the heating circulation path 30, the cooling circulation path 40, the treatment liquid supply path 31, the coolant supply path 41 (described below), and the coolant return path 42 (described below).

[0040] Next, the piping system on the supply side of the processing liquid to the substrate processing apparatus 10 will be described in more detail. The processing liquid supply path 31 is a flow path branched from the heating circulation path 30. The processing liquid flows through the processing liquid supply path 31 from the heating circulation path 30 toward the substrate processing apparatus 10. In other words, the processing liquid supply path 31 is a flow path for supplying the processing liquid to the substrate processing apparatus 10. The processing liquid supply path 31 is mainly composed of piping, and connects the heating circulation path 30 and the substrate processing apparatus 10. In the example of FIG. 1, a processing liquid supply path 31 is provided one-to-one for each of the multiple substrate processing apparatuses 10 to which the processing liquid is to be supplied. A portion of the processing liquid in the heating circulation path 30 is supplied to the substrate processing apparatus 10 through each processing liquid supply path 31.

[0041] The processing liquid supplied to the substrate processing apparatus 10 is discharged to the outside through the discharge path 118, as will be described in detail later. Since the processing liquid is discharged to the outside in this manner, the amount of the processing liquid circulating through the heating circulation path 30 decreases by the amount of the processing liquid supplied to the substrate processing apparatus 10. Therefore, in this embodiment, a processing liquid replenishment unit 60 is provided.

[0042] The processing liquid replenishment unit 60 supplies the processing liquid to the heating circulation path 30. This replenishes the processing liquid in the heating circulation path 30. In the example of FIG. 1 , the processing liquid replenishment unit 60 includes a processing liquid replenishment path 61 and a replenishment tank 62. The processing liquid replenishment path 61 is mainly composed of piping, and its downstream end is connected to the heating circulation path 30. As a more specific example, the downstream end of the processing liquid replenishment path 61 is connected to the heating circulation path 30 upstream of the heat exchanger 22 and downstream of all upstream ends of the processing liquid supply path 31. The upstream end of the processing liquid replenishment path 61 is connected to a replenishment tank 62. The replenishment tank 62 stores the processing liquid. The processing liquid from the replenishment tank 62 is supplied to the heating circulation path 30 through the processing liquid replenishment path 61.

[0043] As described above, the processing liquid is heated in the heat exchanger 22. Immediately after the heat exchanger 22, the temperature of the processing liquid is, for example, about 60°C to 70°C. Then, a portion of the heated processing liquid flows from the heating circulation path 30 into the processing liquid supply path 31 and is supplied to each substrate processing apparatus 10 through the processing liquid supply path 31. Meanwhile, the remaining portion of the processing liquid flows directly downstream through the heating circulation path 30.

[0044] The processing liquid replenishment unit 60 supplies the processing liquid, for example, at room temperature, to the heating circulation path 30. Therefore, the temperature of the processing liquid decreases downstream of the junction of the heating circulation path 30 and the processing liquid replenishment path 61. For example, the temperature of the processing liquid decreases to about 30°C. Then, this low-temperature processing liquid flows into the heat exchanger 22, where it is heated again to about 60°C to 70°C.

[0045] Next, a piping system for supplying a cooling liquid to the substrate processing apparatus 10 (specifically, the substrate processing apparatus 10C and the substrate processing apparatus 10D) will be described in more detail. In the example of FIG. 1, a cooling liquid supply path 41 and a cooling liquid return path 42 are provided between the cooling circulation path 40 and each substrate processing apparatus 10 (specifically, the substrate processing apparatus 10C and the substrate processing apparatus 10D). The cooling liquid supply path 41 is mainly composed of a piping, and its upstream end is connected to the cooling circulation path 40, and its downstream end is connected to the substrate processing apparatus 10. The cooling liquid return path 42 is mainly composed of a piping, and its downstream end is connected to the cooling circulation path 40, and its upstream end is connected to the substrate processing apparatus 10. In the example of FIG. 1, a pair of the cooling liquid supply path 41 and the cooling liquid return path 42 is provided corresponding to each substrate processing apparatus 10 (e.g., the substrate processing apparatus 10C and the substrate processing apparatus 10D) to which the cooling liquid is to be supplied.

[0046] A portion of the cooling liquid in the cooling circulation path 40 is supplied to the substrate processing apparatus 10 through a cooling liquid supply path 41. This cooling liquid is used to cool equipment (components) in the substrate processing apparatus 10, as will be described later. In other words, the cooling liquid cools the components by receiving heat from the components. After cooling the components, the cooling liquid returns to the cooling circulation path 40 through a cooling liquid return path 42.

[0047] 1, the cooling circuit 40 is provided with a cooling unit 48. Specifically, the cooling unit 48 is provided in the cooling circuit 40 upstream of the upstream ends of all the cooling liquid supply paths 41 and downstream of the heat exchanger 23. The cooling unit 48 cools the cooling liquid flowing through the cooling circuit 40. The cooling unit 48 is, for example, a cooling water circulation device (a so-called chiller).

[0048] As described above, the coolant is cooled in the heat exchanger 23. The temperature of the coolant immediately after the heat exchanger 23 is, for example, about 20°C. The coolant flows through the cooling circuit 40 from the heat exchanger 23 toward the cooling unit 48 and flows into the cooling unit 48. The cooling unit 48 cools the coolant to a temperature suitable for cooling the equipment of the substrate processing apparatus 10. The coolant cooled by the cooling unit 48 is supplied from the cooling circuit 40 through the respective coolant supply paths 41 to each substrate processing apparatus 10, cools the equipment of each substrate processing apparatus 10, and returns to the cooling circuit 40 through the respective coolant return paths 42. The coolant then flows through the cooling circuit 40 toward the heat exchanger 23 and flows into the heat exchanger 23. The temperature of the coolant immediately before the heat exchanger 23 is, for example, about 30°C. The coolant is cooled again in the heat exchanger 23, for example, to about 20°C.

[0049] The substrate processing system 100 also includes a control unit 90. The control unit 90 controls various components of the substrate processing system 100. For example, the control unit 90 includes an arithmetic processing unit 91 and a storage medium 92. The arithmetic processing unit 91 is a processing unit such as a CPU (Central Processing Unit) that performs various arithmetic processing. The storage medium 92 includes, for example, a temporary storage medium such as a ROM (Read Only Memory), which is a read-only memory that stores a basic program, a RAM (Random Access Memory), which is a readable and writable memory that stores various information, and a non-temporary storage medium such as a magnetic disk that stores control software or data. When the arithmetic processing unit 91 of the control unit 90 executes a predetermined processing program, the control unit 90 controls each operating mechanism of the substrate processing system 100, and processing in the substrate processing system 100 progresses. Note that the control unit 90 may be realized by a dedicated hardware circuit that does not require software to realize its functions.

[0050] Furthermore, although a single control unit 90 is shown in the example of Figure 1, a control unit 90 may be provided for each of the components such as each substrate processing device 10 and heat pump device 20, and these may communicate with each other to control the substrate processing system 100.

[0051] Next, a specific example of the internal configuration of the substrate processing apparatus 10 will be described. Fig. 2 is a diagram schematically illustrating an example of the configuration of the substrate processing apparatus 10. In the example of Fig. 2, two types of substrate processing apparatuses 10 are shown. Specifically, substrate processing apparatuses 10A and 10B, which are targets to which a processing liquid is supplied, are processing apparatuses that supply a processing liquid to a substrate W, and substrate processing apparatuses 10C and 10D, which are targets to which a cooling liquid is supplied, are processing apparatuses that perform heat treatment on a substrate W.

[0052] Each of the substrate processing apparatuses 10A and 10B includes one or more processing units 11, and the example of Fig. 2 shows a plurality of processing units 11. In the example of Fig. 2, each processing unit 11 includes a chamber 111, a substrate holder 112, a nozzle 114, a nozzle 115, and a guard 116.

[0053] The substrate holding unit 112 is provided in the chamber 111 and holds the substrate W in a horizontal position. Here, the horizontal position means a position in which the thickness direction of the substrate W is aligned with the vertical direction. The substrate W is transported into the chamber 111 by a substrate transport unit (not shown) and handed over to the substrate holding unit 112. In the example of FIG. 2, the substrate holding unit 112 includes a plurality of chuck pins 113. Each of the plurality of chuck pins 113 is provided so as to be displaceable between a chuck position in contact with the peripheral edge of the substrate W and a release position spaced apart from the peripheral edge of the substrate W. When the plurality of chuck pins 113 move to their respective chuck positions, the plurality of chuck pins 113 hold the substrate W. When the plurality of chuck pins 113 move to their respective release positions, the substrate W is released from its hold.

[0054] The substrate holder 112 also includes a motor (not shown) that rotates the substrate W around a rotation axis Q1. The rotation axis Q1 is an axis that passes through the center of the substrate W and is aligned in the vertical direction. Such a substrate holder 112 may also be called a spin chuck.

[0055] The nozzle 114 is provided in the chamber 111 and is used to supply the processing liquid to the upper surface of the substrate W. The nozzle 115 is provided in the chamber 111 and is used to supply the processing liquid to the lower surface of the substrate W. The nozzle 114 is provided vertically above the upper surface of the substrate W, and the nozzle 115 is provided vertically below the lower surface of the substrate W. The nozzle 114 ejects the processing liquid toward the upper surface of the substrate W, and the nozzle 115 ejects the processing liquid toward the lower surface of the substrate W.

[0056] Nozzle 114 and nozzle 115 are connected to a processing liquid supply channel 31. Processing liquid supply channel 31 includes supply channels 31a, 31b, 31c, and 31d. The upstream end of supply channel 31a corresponds to the upstream end of processing liquid supply channel 31 and is connected to heating circulation channel 30. Supply channel 31a is connected to the upstream ends of a plurality of supply channels 31b provided corresponding to the plurality of processing units 11, respectively. The downstream end of each supply channel 31b is connected to the upstream ends of supply channels 31c and 31d. The downstream end of supply channel 31c is connected to nozzle 114, and the downstream end of supply channel 31d is connected to nozzle 115.

[0057] Supply path 31c is provided with valve 32. When valve 32 is opened, the processing liquid is supplied from heating circulation path 30 through supply paths 31a, 31b, and 31c to nozzle 114, and the processing liquid is discharged from nozzle 114 onto the upper surface of substrate W. When valve 32 is closed, the discharge of the processing liquid from nozzle 114 stops.

[0058] Supply path 31d is provided with valve 33. When valve 33 is opened, the processing liquid is supplied from heating circulation path 30 through supply paths 31a, 31b, and 31d to nozzle 115, and the processing liquid is ejected from nozzle 115 onto the lower surface of substrate W. When valve 33 is closed, ejection of the processing liquid from nozzle 115 stops.

[0059] In the example of FIG. 2, a heater 34 is provided in the supply path 31b. The heater 34 heats the processing liquid flowing through the processing liquid supply path 31 (specifically, the supply path 31b). The heater 34 heats the processing liquid so that the temperature of the processing liquid that lands on the substrate W is within a predetermined temperature range including a predetermined process temperature. The heater 34 may be a heater of various types, for example, an electric resistance heater. The heater 34 adjusts the temperature of the processing liquid to the process temperature by raising the temperature of the processing liquid by, for example, a value between 10°C and 20°C.

[0060] When the substrate holder 112 rotates the substrate W around the rotation axis Q1, the valve 32 is opened, causing the nozzle 114 to discharge a high-temperature processing liquid onto the upper surface of the rotating substrate W. The processing liquid that has landed on the upper surface of the substrate W is subjected to centrifugal force associated with the rotation and spreads over the upper surface of the substrate W, splashing outward from the periphery of the substrate W. This allows the upper surface of the substrate W to be processed.

[0061] Furthermore, while the substrate holder 112 rotates the substrate W around the rotation axis Q1, the valve 33 opens, causing the nozzle 115 to discharge a high-temperature processing liquid onto the underside of the rotating substrate W. The processing liquid that has landed on the underside of the substrate W is subjected to centrifugal force associated with the rotation and spreads over the underside of the substrate W, and is scattered outward from the periphery of the substrate W. This allows the underside of the substrate W to be processed with the processing liquid.

[0062] The guard 116 has a cylindrical shape that surrounds the substrate holder 112 and receives the processing liquid that has splashed from the periphery of the substrate W. The processing liquid received on the inner peripheral surface of the guard 116 flows down along the inner peripheral surface and is received in a cup 117. The cup 117 is connected to the upstream end of a discharge path 118, and the processing liquid is discharged to the outside through the discharge path 118. The discharge path 118 is mainly composed of piping.

[0063] In the example of FIG. 2, the substrate processing apparatus 10C and the substrate processing apparatus 10D include a heat-treating unit 12. In the example of FIG. 2, the heat-treating unit 12 includes a chamber 121, a substrate holder 122, and a heater 123. The substrate holder 122 is provided in the chamber 121 and holds the substrate W in a horizontal position. The substrate holder 122 includes, for example, a support table that supports the peripheral portion of the lower surface of the substrate W. The substrate W is transported into the chamber 121 by a substrate transport unit (not shown) and handed over to the substrate holder 122. The heater 123 is provided in the chamber 121 and heats the substrate W held by the substrate holder 122. This allows the substrate W to be subjected to heat treatment. This heat treatment also increases the temperature of the chamber 121 as a by-product.

[0064] 2, the downstream end of the coolant supply path 41 is connected to the upstream end of the cooling path 43, and the downstream end of the cooling path 43 is connected to the upstream end of the coolant return path 42. The cooling path 43 is mainly composed of piping and is arranged to surround the chamber 121. As a specific example, the cooling path 43 is provided along the outer wall of the chamber 121. Note that the cooling path 43 may be embedded in the side wall of the chamber 121 or provided along the inner wall of the chamber 121.

[0065] The processing liquid from the cooling circulation path 40 flows through the coolant supply path 41, the cooling path 43, and the coolant return path 42 in this order, and then returns to the cooling circulation path 40. This allows heat to be transferred from the high-temperature chamber 121 to the low-temperature coolant in the cooling path 43, thereby cooling the chamber 121. Therefore, a material with low heat resistance can be used as the material for the chamber 121. In other words, there is no need to use a material with high heat resistance, and the material selectivity for the chamber 121 can be improved.

[0066] 2, the chamber 121 is shown as the object to be cooled, but this is not necessarily limited to this. Any component of the substrate processing apparatus 10 can be used as the object to be cooled.

[0067] <Effects of the embodiment> As described above, in the substrate processing system 100, the heat pump unit 20 heats the processing liquid. Since the heat pump unit 20 can heat the processing liquid with high thermal efficiency, the efficiency of the substrate processing system 100 can be improved.

[0068] Furthermore, the substrate processing system 100 is provided with a heating circulation path 30. This allows a portion of the processing liquid heated by the heat exchanger 22 to flow back into the heat exchanger 22, thereby enabling the temperature of the processing liquid flowing through the heating circulation path 30 to be adjusted with higher accuracy.

[0069] Furthermore, in the above example, the processing liquid supplied to the substrate processing apparatus 10 is discharged to the outside through the discharge path 118 without returning to the heating circulation path 30, but the processing liquid replenishment unit 60 supplies the processing liquid to the heating circulation path 30. This makes it possible to compensate for the decrease in the amount of processing liquid circulating in the heating circulation path 30 that occurs when the processing liquid is supplied to the substrate processing apparatus 10. Therefore, it is possible to continue to supply the processing liquid appropriately to the substrate processing apparatus 10.

[0070] In the above example, the heaters 34 are provided corresponding to the individual processing units 11 of the substrate processing apparatus 10. That is, the heaters 34 are provided at positions closer to the nozzles 114 and 115 of each substrate processing apparatus 10 than the heat pump device 20. Therefore, the temperature of the processing liquid discharged from the nozzles 114 and 115 can be adjusted to the process temperature with higher accuracy by the heaters 34. Therefore, the substrates W can be processed more appropriately.

[0071] In the above example, a thermally conductive resin such as polypropylene or polyethylene is used as the material of the heat exchanger 22. Such a resin is formed to a high purity, so that even when the processing liquid passes through the processing liquid flow path 222 of the heat exchanger 22, almost no impurities are eluted from the heat exchanger 22 into the processing liquid. Therefore, the substrate processing apparatus 10 can process the substrates W with a clean processing liquid.

[0072] It is not necessary that the entire heat exchanger 22 is made of the resin, and only the portion that constitutes the treatment liquid flow path 222 may be made of the resin.

[0073] On the other hand, since the density of such resin is relatively low, the refrigerant may be mixed from the refrigerant flow path 221 into the processing liquid flow path 222 in the heat exchanger 22. However, in the above example, a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant. Even if carbon dioxide or ammonia is mixed into the processing liquid, it is unlikely to affect the processing of the substrate W. Therefore, even if the refrigerant is mixed into the processing liquid, the processing of the substrate W can be performed more appropriately compared to other refrigerants.

[0074] In the above example, the cooling liquid to be cooled by the heat pump unit 20 is used to cool the equipment of the substrate processing apparatus 10C and the substrate processing apparatus 10D. This allows the energy on the cooling side of the heat pump unit 20 to be utilized, further improving the efficiency of the substrate processing system 100.

[0075] In the heat pump device 20, the amount of heat transferred from the refrigerant to the processing liquid is approximately equal to the amount of heat transferred from the cooling liquid to the refrigerant. The above-described example also includes the cooling unit 48. The cooling unit 48 can adjust the temperature of the cooling liquid independently of the temperature of the processing liquid immediately after the heat exchanger 22. This allows the temperature of the cooling liquid supplied to the substrate processing apparatus 10 to be adjusted over a wider range.

[0076] In the above example, the cooling unit 48 is provided in the cooling circulation path 40. The cooling liquid cooled by the cooling unit 48 is supplied to the substrate processing apparatus 10C and the substrate processing apparatus 10D through the respective cooling liquid supply paths 41. The lengths of the cooling liquid supply paths 41 may differ between the substrate processing apparatus 10C and the substrate processing apparatus 10D, so the temperature of the cooling liquid may vary between the substrate processing apparatus 10C and the substrate processing apparatus 10D. Therefore, the temperature of the cooling object (e.g., chamber 121) may vary between the substrate processing apparatus 10C and the substrate processing apparatus 10D. However, the temperature of the cooling object has almost no effect on the processing of the substrate W compared to the temperature of the processing liquid. Therefore, even if the temperature of the cooling liquid varies, no problems will occur in the processing of the substrate W.

[0077] In the above example, since the cooling section 48 is provided in the cooling circulation path 40, the configuration of the substrate processing system 100 can be simplified and manufacturing costs can be reduced compared to when separate cooling sections 48 are provided for the substrate processing apparatus 10C and the substrate processing apparatus 10D.

[0078] <Modification> In the example of FIG. 1, the cooling liquid is supplied to substrate processing apparatuses 10 (substrate processing apparatuses 10C and 10D) other than the substrate processing apparatuses 10 (substrate processing apparatuses 10A and 10B) to which the high-temperature processing liquid is supplied. However, this is not necessarily limited to this. For example, if equipment requiring cooling is provided in the substrate processing apparatuses 10A and 10B, the cooling liquid may be supplied to the substrate processing apparatuses 10A and 10B. In this case, the cooling path 43 may be appropriately arranged in the substrate processing apparatuses 10A and 10B along the equipment to be cooled.

[0079] Furthermore, in the above example, the cooling liquid cooled the equipment of the substrate processing apparatus 10, but the cooling liquid may also be supplied to the substrate W. In this case, the cooling liquid corresponds to the processing liquid. FIG. 3 is a diagram schematically showing an example of a portion of the configuration of the substrate processing system 100. In the example of FIG. 3, the upstream end of a cooling liquid supply path 44 is connected to the cooling circulation path 40. The cooling liquid supply path 44 is also mainly composed of piping. The cooling liquid is supplied to the substrate processing apparatus 10 through the cooling liquid supply path 44. In the example of FIG. 3, the substrate processing apparatus 10 further includes a nozzle 1141. The nozzle 1141 ejects the cooling liquid onto the upper surface of the substrate W. The cooling liquid is, for example, pure water.

[0080] As shown in FIG. 3, nozzle 1141 is connected to coolant supply path 44. Coolant supply path 44 includes supply path 44a, supply path 44b, supply path 44c, and supply path 44d. The upstream end of supply path 44a corresponds to the upstream end of coolant supply path 44 and is connected to cooling circulation path 40. Supply path 44a is connected to the upstream ends of multiple supply paths 44b provided corresponding to multiple processing units 11. The downstream end of each supply path 44b is connected to the upstream ends of supply path 44c and supply path 44d. The downstream end of supply path 44c is connected to nozzle 1141, and the downstream end of supply path 44d is connected to nozzle 115.

[0081] Supply path 44c is provided with a valve 45. When valve 45 is opened, cooling liquid is supplied from cooling circulation path 40 through supply paths 44a, 44b, and 44c to nozzle 1141, and is discharged from nozzle 1141 onto the upper surface of substrate W. When valve 45 is closed, the discharge of cooling liquid from nozzle 1141 stops.

[0082] Supply path 44d is provided with a valve 46. When valve 46 is opened, the cooling liquid is supplied from cooling circulation path 40 through supply paths 44a, 44b, and 44d to nozzle 115, and the cooling liquid is discharged from nozzle 115 onto the underside of substrate W. When valve 46 is closed, the discharge of the processing liquid from nozzle 115 stops.

[0083] The coolant splashes outward from the periphery of the substrate W and is discharged to the outside through the guard 116, the cup 117, and the discharge path 118. In this case, the amount of coolant circulating through the cooling circuit 40 may decrease. Therefore, in the example of FIG. 3, the substrate processing system 100 is provided with a coolant replenishment unit 65. The coolant replenishment unit 65 supplies coolant to the cooling circuit 40. In the example of FIG. 3, the coolant replenishment unit 65 includes a coolant replenishment path 66 and a replenishment tank 67. The coolant replenishment path 66 is mainly composed of a pipe, and its downstream end is connected to the cooling circuit 40. As a specific example, the downstream end of the coolant replenishment path 66 is connected to the cooling circuit 40 upstream of the heat exchanger 23 and downstream of all the coolant supply paths 44. The upstream end of the coolant replenishment path 66 is connected to the replenishment tank 67. The replenishment tank 67 stores the coolant. The coolant from the replenishment tank 67 is supplied to the cooling circuit 40 through the coolant replenishment path 66. This replenishes the cooling liquid in the cooling circulation path 40. If the cooling liquid is the same type of liquid as the processing liquid, the replenishment tank 67 may be the same tank as the replenishment tank 62.

[0084] <Control of heater 34> Each processing unit 11 supplies a processing liquid to the loaded substrate W to perform processing. Initially, the temperature of the processing liquid supply path 31 is not high. As described above, when a high-temperature processing liquid flows through the low-temperature processing liquid supply path 31, heat is transferred from the processing liquid to the processing liquid supply path 31, and the temperature of the processing liquid may decrease. Therefore, initially, even with the heating operation of the heater 34, the temperature of the processing liquid may not be able to increase to the process temperature.

[0085] Therefore, the control unit 90 of the substrate processing apparatus 10 may cause the heater 34 to start the heating operation before opening the valves 32 and 33. FIG. 4 is a flowchart showing an example of heater start control. The control unit 90 determines whether or not information related to the substrates W (hereinafter referred to as pre-operation information) has been received (step S1). The pre-operation information includes various information such as the number of substrates W to be loaded into the substrate processing apparatus 10 and a recipe indicating the procedure for processing the substrates W. The pre-operation information is transmitted to the control unit 90 from, for example, a host computer or an apparatus upstream of the substrate processing apparatus 10, or is input to the control unit 90 by an operator via a user interface (not shown).

[0086] If the control unit 90 has not yet received the pre-operation information, the substrate processing apparatus 10 is not yet scheduled to process a substrate W, and so step S1 is executed again. On the other hand, when the control unit 90 has received the pre-operation information, the control unit 90 causes the heater 34 belonging to the substrate processing apparatus 10 to start a heating operation (step S2).

[0087] As described above, the control unit 90 starts the heating operation of the heater 34 in response to receiving the pre-operation information. Accordingly, the heater 34 starts the heating operation before the processing liquid is supplied to the substrate W, more specifically, before the substrate W is loaded into each processing unit 11. Thus, the heater 34 can preheat the processing liquid supply path 31. Therefore, even when the supply of the processing liquid to the substrate W starts, the heater 34 can adjust the processing liquid to the process temperature with high accuracy, and the processing unit 11 can process the substrate W more appropriately.

[0088] <Second embodiment> The configuration of the substrate processing system 100 according to the second embodiment is similar to that of the first embodiment. In the second embodiment, an example of the internal configuration of the heater 34 will be described.

[0089] FIG. 5 is a diagram schematically illustrating an example of the configuration of a heater 34 according to the second embodiment. In the example of FIG. 5, the heater 34 is a heat pump. Specifically, the heater 34 includes a refrigerant circulation path 341, a heat exchanger 342 for heating, a heat exchanger 343 for cooling, a compressor 344, and an expansion valve 345. The refrigerant circulation path 341 is mainly composed of piping. A refrigerant flows through the refrigerant circulation path 341. The refrigerant is a carbon dioxide refrigerant or an ammonia refrigerant. The refrigerant circulation path 341 is provided with a heat exchanger 342, a heat exchanger 343, a compressor 344, and an expansion valve 345. These are similar to those of the heat pump device 20, so a repeated description will be avoided here. The heat exchanger 343 may be a heat exchanger that exchanges heat between a refrigerant and a cooling liquid, or a heat exchanger that exchanges heat between a refrigerant and outside air.

[0090] In the second embodiment, the heater 34 is a heat pump, which can heat the processing liquid with high thermal efficiency, thereby further improving the efficiency of the substrate processing system 100.

[0091] <Third embodiment> In the first and second embodiments, a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant. Even if these refrigerants are mixed into the processing liquid, they are unlikely to affect the processing of the substrate W. However, if the concentration of the refrigerant in the processing liquid becomes very high, it may adversely affect the processing of the substrate W. Furthermore, if a refrigerant other than a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant, even a small amount of the refrigerant mixed into the processing liquid may adversely affect the processing of the substrate W.

[0092] Therefore, the third embodiment aims to provide a technique that can monitor the concentration of the refrigerant in the liquid to be treated.

[0093] Fig. 6 is a diagram schematically illustrating an example of a portion of the configuration of a substrate processing system 100A according to the third embodiment. In Fig. 6, the configuration on the cooling target side of the heat pump unit 20 is omitted to avoid complication of the drawing.

[0094] The substrate processing system 100A differs from the substrate processing system 100 in the presence or absence of a refrigerant concentration sensor 70. The refrigerant concentration sensor 70 measures the refrigerant concentration in the processing liquid flowing through the heating circulation path 30 and outputs a measurement result signal indicating the measurement result to the control unit 90. When a carbon dioxide refrigerant is used as the refrigerant, the refrigerant concentration sensor 70 measures the concentration of carbon dioxide dissolved in the processing liquid. When ammonia is used as the refrigerant, the refrigerant concentration sensor 70 measures the concentration of ammonia dissolved in the processing liquid. In the example of FIG. 6, the refrigerant concentration sensor 70 is provided in the heating circulation path 30 downstream of all upstream ends of the processing liquid supply path 31 and upstream of the downstream end of the processing liquid replenishment path 61.

[0095] 6, the substrate processing system 100A is provided with a notification unit 93. The notification unit 93 notifies various pieces of information to an operator. For example, the notification unit 93 includes at least one of a display such as a liquid crystal display, and a speaker. The display displays various pieces of information, and the speaker outputs the various pieces of information as sounds.

[0096] The control unit 90 monitors and controls the refrigerant concentration in the treatment liquid based on the measurement result of the refrigerant concentration sensor 70. Fig. 7 is a flowchart showing an example of the monitoring control. First, the refrigerant concentration sensor 70 measures the refrigerant concentration in the treatment liquid (step S11). The refrigerant concentration sensor 70 outputs a measurement result signal indicating the measured refrigerant concentration to the control unit 90.

[0097] Next, the control unit 90 determines whether the concentration of the coolant measured by the coolant concentration sensor 70 is equal to or greater than a predetermined coolant reference value (step S12). The coolant reference value is, for example, a value equal to or less than the coolant concentration at which the degree of adverse effect of the processing on the substrate W is tolerable. If the concentration of the coolant is less than the coolant reference value, step S11 is executed again.

[0098] When the refrigerant concentration is equal to or greater than the refrigerant reference value, the control unit 90 executes at least one of a notification control and a stop control. The stop control is a control for stopping the substrate processing system 100A. This makes it possible to prevent problems in processing the substrate W due to the refrigerant being mixed into the processing liquid.

[0099] The notification control is control in which the control unit 90 causes the notification unit 93 to issue a notification. If the notification unit 93 includes a display, the display displays information indicating that the refrigerant concentration is equal to or greater than the refrigerant reference value, and if the notification unit 93 includes a speaker, the notification unit 93 outputs the information indicating that the refrigerant concentration is equal to or greater than the refrigerant reference value by voice.

[0100] Based on this notification, the worker can recognize that the refrigerant concentration of the treatment liquid is increasing, and can take appropriate measures, such as replacing the heat exchanger 22.

[0101] <Fourth embodiment> 8 is a diagram showing an example of the configuration of a substrate processing system 100B according to the fourth embodiment. The substrate processing system 100B differs from the substrate processing system 100 in that a heat retention unit 50 is provided.

[0102] The heat retention unit 50 receives a high-temperature processing liquid supplied from the substrate processing apparatus 10 through the discharge path 118. Hereinafter, the processing liquid flowing from the substrate processing apparatus 10 into the discharge path 118 will also be referred to as a waste liquid. The heat retention unit 50 uses the heat of the high-temperature waste liquid to keep the heating circulation path 30 warm. In other words, the heat retention unit 50 suppresses heat diffusion from the heating circulation path 30 to the outside.

[0103] 9 is a diagram showing an example of a specific configuration of the substrate processing apparatus 10 and the heat retention unit 50. In the example of FIG. 9, the substrate processing apparatus 10 further includes a nozzle 1142. The nozzle 1142 supplies a high-temperature processing liquid to the upper surface of the substrate W. The nozzle 1142 is connected to the downstream end of a processing liquid supply path 311. The upstream end of the processing liquid supply path 311 is connected to a processing liquid supply source (not shown). The processing liquid supply path 311 is also mainly composed of piping. The processing liquid supply source supplies a high-temperature processing liquid to the processing liquid supply path 311. The processing liquid includes at least one of, for example, SPM (sulfuric acid / hydrogen peroxide solution) at about 100°C to 120°C, SC-1 (ammonia / hydrogen peroxide solution) at about 75°C to 85°C, and SC-2 (hydrochloric acid / hydrogen peroxide solution) at about 75°C to 85°C.

[0104] 9, a plurality of guards 116, a plurality of cups 117, and a plurality of discharge paths 118 are provided. Each guard 116 has a coaxial cylindrical shape, and is provided so that it can be raised and lowered. A cup 117 is provided corresponding to each of the plurality of guards 116, and receives the processing liquid that flows down from the corresponding guard 116. A discharge path 118 is provided corresponding to each of the plurality of cups 117, and discharges the processing liquid received by the corresponding cup 117.

[0105] When the guard 116 corresponding to the type of processing liquid is raised and that type of processing liquid is supplied to the substrate W, the processing liquid splashes from the periphery of the substrate W, is received by the guard 116, and is discharged through the corresponding cup 117 and discharge path 118. This allows the processing liquids to be classified and discharged by type.

[0106] Here, the processing liquid discharged from the nozzle 1142 is supplied to the heat retention unit 50 through the guard 116, the cup 117, and the discharge path 118 corresponding to the processing liquid. Note that the waste liquid supplied to the heat retention unit 50 is not limited to the high-temperature processing liquid discharged from the nozzle 1142, but may also be the high-temperature processing liquid discharged from the nozzle 114 or the nozzle 115.

[0107] 9, the heat retention unit 50 includes a tank 51. High-temperature waste liquid is supplied to the tank 51 from a discharge path 118. As a result, the waste liquid is stored in the tank 51.

[0108] 9, a portion of the heating circulation path 30 is immersed in the waste liquid in the tank 51. This portion of the heating circulation path 30 is, for example, at least a portion of the heating circulation path 30 that is downstream of all upstream ends of the processing liquid supply paths 31 and upstream of the heat exchanger 22. In the example of Fig. 9, this portion of the heating circulation path 30 has a U-shape and is immersed in the waste liquid in the tank 51. The other portion of the heating circulation path 30 extends to the outside of the tank 51 through the top opening of the tank 51.

[0109] In this way, a part of the heating circulation path 30 is immersed in the high-temperature waste liquid, and therefore heat is transferred from the high-temperature waste liquid to the part of the heating circulation path 30. In other words, the temperature of the part of the heating circulation path 30 can be increased.

[0110] As described above, in the fourth embodiment, the heat of the high-temperature waste liquid discharged to the outside through the discharge path 118 is utilized to maintain the temperature of the heating circulation path 30. Therefore, the heat of the waste liquid can be effectively utilized, and the efficiency of the substrate processing system 100B can be further improved.

[0111] In the example of FIG. 8 , the downstream end of the processing liquid replenishment path 61 of the processing liquid replenishment unit 60 is connected to the heating circulation path 30 between the heat exchanger 22 and the heat retention unit 50. However, this is not necessarily limited to this. The downstream end of the processing liquid replenishment path 61 may be connected to the heating circulation path 30 upstream of the heat retention unit 50 and downstream of all upstream ends of the processing liquid supply path 31. In the example of FIG. 8 , this processing liquid replenishment path 61 is indicated by a two-dot chain line. In this case, a lower temperature processing liquid flows through the part of the heating circulation path 30 immersed in the tank 51. This is because the merging of the processing liquid from the processing liquid replenishment unit 60 into the heating circulation path 30 reduces the temperature of the processing liquid, thereby increasing the amount of heat transferred from the wastewater in the tank 51 to the heating circulation path 30. This allows for more effective use of the heat of the wastewater, thereby improving the efficiency of the substrate processing system 100.

[0112] Next, the discharge of waste liquid from tank 51 will be described. In the example of Fig. 9, the upstream end of discharge path 52 is connected to tank 51. Discharge path 52 is mainly composed of piping. Discharge path 52 is provided with valve 53, and when valve 53 is opened, the waste liquid from tank 51 is discharged to the outside through discharge path 52. When valve 53 is closed, the discharge of waste liquid stops.

[0113] 9, a temperature sensor 54 is provided in the heating circulation path 30 between the heat retention section 50 and the heat exchanger 22. The temperature sensor 54 detects the temperature of the treatment liquid flowing through the heating circulation path 30, and outputs a measurement result signal indicating the measurement result to the control section 90.

[0114] Here, the control unit 90 controls the discharge of waste liquid from the tank 51 based on the temperature measured by the temperature sensor 54. Fig. 10 is a flowchart showing an example of the discharge control. First, the temperature sensor 54 measures the temperature of the treatment liquid in the heating circulation path 30 (step S21). The temperature sensor 54 outputs a measurement result signal indicating the measured temperature to the control unit 90.

[0115] Next, the control unit 90 determines whether the temperature measured by the temperature sensor 54 is equal to or higher than a predetermined temperature reference value (step S22). If the temperature is lower than the temperature reference value, step S21 is executed again.

[0116] If the temperature is equal to or higher than the reference temperature value, the control unit 90 opens the valve 53 (step S23). This causes the waste liquid in the tank 51 to be discharged to the outside through the discharge path 52. As a result, the amount of waste liquid stored in the tank 51 decreases over time. Therefore, the amount of heat provided to the heating circulation path 30 in the heat retention unit 50 decreases, and the temperature of the treatment liquid flowing into the heat exchanger 22 of the heating circulation path 30 decreases.

[0117] As described above, this discharge control can prevent an excessive increase in the temperature of the treatment liquid flowing into the heat exchanger 22. This can suppress a decrease in the utilization rate of the heat pump unit 20.

[0118] <Fifth embodiment> 11 is a diagram showing an example of the configuration of a substrate processing system 100C according to the fifth embodiment. The substrate processing system 100C differs from the substrate processing system 100B in that a waste liquid cooling unit 55 is provided.

[0119] High-temperature waste liquid from the substrate processing apparatus 10 is supplied to the waste liquid cooling unit 55. The waste liquid cooling unit 55 cools the waste liquid in the low-temperature cooling circulation path 40. In the example of Fig. 11, the waste liquid cooling unit 55 is provided downstream of the heat retention unit 50 in the flow of the waste liquid. In other words, the downstream end of the discharge path 52 of the heat retention unit 50 is connected to the waste liquid cooling unit 55, and the waste liquid is supplied from the heat retention unit 50 to the waste liquid cooling unit 55 through the discharge path 52.

[0120] FIG. 12 is a diagram schematically illustrating an example of the configuration of the effluent cooling unit 55. In the example of FIG. 12, the effluent cooling unit 55 includes a tank 56. The effluent is supplied to the tank 56. As a result, the tank 56 stores the effluent. In the example of FIG. 12, the effluent is supplied to the tank 56 from the heat retention unit 50 through the discharge path 52. As described above, in the heat retention unit 50, heat is transferred from the effluent to the heating circulation path 30, so that the temperature of the effluent also drops. Therefore, the effluent cooling unit 55 is supplied with effluent whose temperature has been slightly lowered.

[0121] A portion of the cooling circuit 40 is immersed in the wastewater in the tank 56. This portion of the cooling circuit 40 is, for example, at least a portion of the cooling circuit 40 that is downstream of both the coolant supply path 41 and the coolant return path 42 and upstream of the heat exchanger 23. When the coolant supply path 44 is connected to the cooling circuit 40, this portion of the cooling circuit 40 that is immersed in the wastewater is, for example, at least a portion of the cooling circuit 40 that is downstream of both the coolant supply path 41, the coolant return path 42, and the coolant supply path 44 and upstream of the heat exchanger 23. In the example of FIG. 12 , this portion of the cooling circuit 40 has a U-shape and is immersed in the wastewater in the tank 56. The other portion of the cooling circuit 40 extends outside the tank 56 through the top opening of the tank 56.

[0122] In this way, the part of the cooling circuit 40 is immersed in the hot waste liquid in the tank 56, so that heat is transferred from the waste liquid to the part of the cooling circuit 40. This cools the waste liquid, further reducing its temperature.

[0123] The upstream end of a discharge path 57 is connected to the tank 56. The discharge path 57 is mainly composed of piping. A valve 58 is provided in the discharge path 57, and when the valve 58 is opened, the waste liquid in the tank 56 is discharged to the outside through the discharge path 57. When the valve 58 is closed, the discharge of the waste liquid stops.

[0124] The waste liquid cooling unit 55 cools the waste liquid using the cooling circulation path 40, and therefore the temperature of the waste liquid can be lowered more quickly. Therefore, the waste liquid at a lower temperature can be discharged to the outside through the discharge path 57. For example, the control unit 90 may open the valve 58 when the temperature of the waste liquid in the tank 56 falls below the allowable temperature.

[0125] 13 is a diagram schematically illustrating another example of the configuration of the substrate processing system 100C. In the example of FIG. 13, the waste liquid cooling unit 55 cools the waste liquid using a branch path 47 branching from the cooling circulation path 40. The branch path 47 is mainly composed of piping, and its upstream end is connected to the cooling circulation path 40. As a specific example, the upstream end of the branch path 47 is connected to the cooling circulation path 40 downstream of the upstream ends of the coolant supply path 41 and the coolant return path 42 and upstream of the heat exchanger 23. Note that when the coolant supply path 44 is connected to the cooling circulation path 40, the upstream end of the branch path 47 is connected to the cooling circulation path 40 downstream of the coolant supply path 41, the coolant return path 42, and the coolant supply path 44 and upstream of the heat exchanger 23.

[0126] 13, a portion of the branch path 47 is immersed in the waste liquid in the tank 56. In the example of Fig. 13, the portion of the branch path 47 has a U-shape and is immersed in the waste liquid in the tank 56. The other portion of the branch path 47 extends to the outside of the tank 56 through the top opening of the tank 56.

[0127] A valve 471 is provided in the branch path 47. When the valve 471 is opened, a portion of the cooling liquid flows from the cooling circulation path 40 through the branch path 47 and is discharged to the outside. Since low-temperature cooling liquid flows through the branch path 47, the discharged liquid in the tank 56 can be cooled.

[0128] When the coolant is discharged through the branch path 47, the amount of coolant circulating through the cooling circuit 40 decreases, so it is preferable to provide the coolant replenishing unit 65 shown in Fig. 3. This can suppress the decrease in the amount of circulation.

[0129] In addition, although both the heat retention section 50 and the waste liquid cooling section 55 are provided in the example of FIG. 11, the heat retention section 50 does not necessarily have to be provided.

[0130] As described above, the substrate processing systems 100, 100A to 100C have been described in detail. However, the above description is merely an example in all respects, and the substrate processing systems 100, 100A to 100C are not limited thereto. It is understood that countless variations not illustrated can be envisioned without departing from the scope of this disclosure. The configurations described in the above embodiments and variations can be combined or omitted as appropriate, as long as they are not mutually inconsistent. [Explanation of symbols]

[0131] 10, 10A to 10D Substrate processing equipment 100,100A~100C Substrate Processing System 118 Exhaust channel 20 Heat pump equipment 22 Heat exchanger 30 Heating circuit 31 Processing liquid supply path 34 Heater 40 Cooling circuit 41,44 Coolant supply path 47 Fork in the Road 48 Cooling section 50 Heat retention section 55 Drainage cooling section 61 Processing solution replenishment line 70 Refrigerant concentration sensor 90 Control Unit W substrate

Claims

1. one or more substrate processing devices that supply processing liquids to substrates to process the substrates; a heat pump device for heating the treatment liquid; a heating circulation path that returns the treated liquid from the heat pump device to the heat pump device; a processing liquid supply path branching from the heating circulation path and supplying the processing liquid to the substrate processing apparatus; a cooling circulation path that returns the cooling liquid cooled by the heat pump device to the heat pump device; a cooling liquid supply path branching from the cooling circulation path and supplying the cooling liquid to the substrate processing apparatus; A substrate processing system comprising:

2. 10. The substrate processing system of claim 1, The substrate processing system further comprises a heater that heats the processing liquid flowing through the processing liquid supply path.

3. 3. The substrate processing system according to claim 2, The substrate processing system, wherein the heater comprises a heat pump.

4. 4. The substrate processing system according to claim 2, wherein: The substrate processing system further comprises a control unit that receives information about the substrate and causes the heater to start a heating operation.

5. 3. The substrate processing system according to claim 1, the heat pump device includes a heat exchanger connected to the heating circuit and made of a thermally conductive resin; The substrate processing system includes: The substrate processing system further comprises a coolant concentration sensor for measuring a coolant concentration in the heating circuit.

6. 3. The substrate processing system according to claim 1, a drainage path through which wastewater from the substrate processing apparatus flows; a heat retention unit that keeps the heating circulation path warm with the waste liquid supplied from the discharge path; The substrate processing system further comprises:

7. 3. The substrate processing system according to claim 1, The substrate processing system further comprises a cooling unit, located upstream of the cooling liquid supply path and downstream of the heat pump device, for cooling the cooling liquid flowing through the cooling circulation path.

8. 8. The substrate processing system according to claim 7, a drainage path through which wastewater from the substrate processing apparatus flows; a waste liquid cooling unit that cools the waste liquid in the cooling circulation path or a branch path branched from the cooling circulation path; The substrate processing system further comprises:

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