Gas supply device for substrate processing equipment

Abstract

To provide a gas supply device for a substrate processing apparatus capable of confirming the occurrence of a failure or an abnormal operation in a gas supply mechanism.SOLUTION: The gas supply device for a substrate processing apparatus includes: a first gas supply unit for supplying a gas to a first gas distribution unit; a second gas supply unit for supplying a gas to a second gas distribution unit; a control unit; and a storage unit; wherein the first gas supply unit comprises a first supply line, a plurality of first gas supply mechanisms, and a first measurement mechanism for measuring a first pressure of the first supply line, and the second gas supply unit comprises a second supply line, a plurality of second gas supply mechanisms, and a second measurement mechanism for measuring a second pressure of the second supply line, wherein the first measurement mechanism checks whether the first pressure deviates from a first reference value, the second measurement mechanism checks whether the second pressure deviates from a second reference value, the storage unit stores pressure data, and the control unit changes the first reference value and the second reference value.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for performing processing steps such as deposition and etching on a substrate. [Background technology]

[0002] Generally, a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate to manufacture solar cells, semiconductor devices, flat panel displays, etc. To this end, processing processes are performed on the substrate, such as a deposition process to deposit a thin film of a specific material on the substrate, a photo process to selectively expose the thin film using a photosensitive material, and an etching process to remove the thin film from the selectively exposed portions to form a pattern.

[0003] Such a substrate processing step is performed by a substrate processing apparatus, which performs the processing step on the substrate using gas supplied from a gas supply apparatus.

[0004] FIG. 1 is a schematic diagram of a gas supply device according to the prior art.

[0005] Referring to FIG. 1, a conventional gas supply device 100 includes a first supply line 110 connected to a substrate processing apparatus 200, a first gas supply mechanism 120 connected to the first supply line 110, a second supply line 130 connected to the substrate processing apparatus 200, and a second gas supply mechanism 140 connected to the second supply line 130.

[0006] The second gas supply mechanism 140 and the first gas supply mechanism 120 are connected to each other, so that the second gas supply mechanism 140 and the first gas supply mechanism 120 are connected to the substrate processing apparatus 200 in a parallel structure.

[0007] In this case, even if a failure or abnormal operation occurs in either the second gas supply mechanism 140 or the first gas supply mechanism 120, gas continues to be supplied to the substrate processing apparatus 200 through the remaining one of the second gas supply mechanism 140 and the first gas supply mechanism 120 that is operating normally.

[0008] Therefore, in the conventional gas supply device 100, it is difficult to determine whether a failure or abnormal operation has occurred in either the second gas supply mechanism 140 or the first gas supply mechanism 120 during the processing process, and the determination must be made through a quality inspection of the substrate after the processing process is completed, resulting in an increase in damage and loss. Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention has been devised to solve the above-mentioned problems, and aims to provide a gas supply device for a substrate processing apparatus that can check whether a failure or abnormal operation has occurred in the gas supply mechanism. [Means for solving the problem]

[0010] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0011] A gas supply apparatus for a substrate processing apparatus according to the present invention may include a first gas supply unit for supplying gas to a first gas injection unit, a second gas supply unit for supplying gas to a second gas injection unit, a control unit, and a storage unit. The first gas supply unit may include a first supply line connected to the first gas injection unit, a plurality of first gas supply mechanisms connected to the first supply line, and a first measurement mechanism for measuring a first pressure of the first supply line. The second gas supply unit may include a second supply line connected to the second gas injection unit, a plurality of second gas supply mechanisms connected to the second supply line, and a second measurement mechanism for measuring a second pressure of the second supply line. The first measurement mechanism may check whether the first pressure deviates from a first reference value set by the control unit. The second measurement mechanism may check whether the second pressure deviates from a second reference value set by the control unit. The storage unit may store pressure data measured by the first measurement mechanism and the second measurement mechanism, and the control unit may change the first reference value and the second reference value using the pressure data stored in the storage unit.

[0012] A gas supply apparatus for a substrate processing apparatus according to the present invention may include a plurality of supply lines each connected to a plurality of gas injection units, a plurality of gas supply mechanisms connected to each of the supply lines, a plurality of measurement mechanisms for measuring the pressure of each of the supply lines, a control unit, and a storage unit. Each of the measurement mechanisms may check whether the pressure deviates from a reference value set by the control unit. The storage unit may store pressure data measured by the plurality of measurement mechanisms, and the control unit may change the reference value using the pressure data stored in the storage unit. [Effects of the Invention]

[0013] According to the present invention, the following effects can be obtained.

[0014] The present invention can be implemented to enable detection of a failure or abnormal operation of a gas supply mechanism even during a substrate processing process, thereby preventing the substrate processing process from continuing when a failure or abnormal operation of the gas supply mechanism occurs, thereby reducing damage and loss.

[0015] The present invention can shorten the time required from the time a failure or abnormal operation occurs in a gas supply mechanism to the time subsequent processing such as repair is performed, thereby contributing to improving productivity by increasing the operating rate of substrate processing equipment. [Brief explanation of the drawings]

[0016] [Figure 1] FIG. 1 is a schematic diagram of a gas supply device according to the prior art. [Figure 2] 1 is a schematic configuration diagram of a gas supply device for a substrate processing apparatus and a substrate processing apparatus according to the present invention; [Figure 3] 1 is a schematic side cross-sectional view of an embodiment of a substrate processing apparatus to which a gas supply apparatus for a substrate processing apparatus according to the present invention is applied; [Figure 4] 1 is a schematic side cross-sectional view of an embodiment of a substrate processing apparatus to which a gas supply apparatus for a substrate processing apparatus according to the present invention is applied; [Figure 5] 4 is a graph showing, over time, a first pressure measured by a first measuring mechanism and a second pressure measured by a second measuring mechanism in a gas supply device for a substrate processing apparatus according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a gas supply apparatus for a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0018] 2, a gas supply apparatus 1 for a substrate processing apparatus according to the present invention supplies gas to a substrate processing apparatus 200. The substrate processing apparatus 200 performs a processing process on a substrate 300. The substrate 300 may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing apparatus 200 can perform a deposition process for depositing a thin film on the substrate 300, an etching process for removing a portion of the thin film deposited on the substrate 300, and the like.

[0019] Before describing the gas supply apparatus 1 for a substrate processing apparatus according to the present invention, the substrate processing apparatus 200 will be specifically described as follows.

[0020] 3 and 4, the substrate processing apparatus 200 may include a first gas injection unit 210 and a second gas injection unit 220. The first gas injection unit 210 and the second gas injection unit 220 inject gas into a processing space where a processing process is performed on the substrate 300. The gas supply apparatus 1 for a substrate processing apparatus according to the present invention may supply gas to the first gas injection unit 210 and the second gas injection unit 220. The first gas injection unit 210 and the second gas injection unit 220 may inject gas toward different substrates 300.

[0021] The first gas injection unit 210 and the second gas injection unit 220 may be installed in a first process chamber 230 of the substrate processing apparatus 200. In this case, as shown in FIG. 3, the first gas injection unit 210 and the second gas injection unit 220 may be configured to inject gases into different process regions within the first process chamber 230. The first gas injection unit 210 and the second gas injection unit 220 may be installed on a first lid 230a located on the top of the first process chamber 230. A first substrate support unit 231 for supporting the substrate 300 may be installed in the first process chamber 230. The first gas injection unit 210 and the second gas injection unit 220 may be located above the first substrate support unit 231 and may inject gases toward the first substrate support unit 231. In this case, the first substrate support unit 231 may be rotated intermittently or continuously by a first rotation mechanism 232. Although not shown, three or more gas injection units may be installed in the first process chamber 230. In this case, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention may be embodied to supply gas to each of the gas injection units.

[0022] The first gas injection unit 210 may be installed in a first process chamber 230 of the substrate processing apparatus 200, and the second gas injection unit 220 may be installed in a second process chamber 240 of the substrate processing apparatus 200. In this case, as shown in FIG. 4, the first gas injection unit 210 may be configured to inject gas into the first process chamber 230. The first gas injection unit 210 may be installed on the first lid 230a. The first process chamber 230 may include a first substrate support unit 231. The first gas injection unit 210 may be positioned above the first substrate support unit 231 and may inject gas toward the first substrate support unit 231. In this case, the first substrate support unit 231 may be rotated intermittently or continuously by the first rotation mechanism 232. The second gas injection unit 220 may be configured to inject gas into the second process chamber 240. The second gas injection unit 220 may be installed on a second lid 240a located on the top of the second process chamber 240. A second substrate support unit 241 for supporting the substrate 300 may be installed in the second process chamber 240. The second gas injection unit 220 may be located above the second substrate support unit 241 and may inject gas toward the second substrate support unit 241. In this case, the second substrate support unit 241 may be rotated intermittently or continuously by a second rotation mechanism 242. As described above, the substrate processing apparatus 200 may be implemented as a cluster type including the first process chamber 230 and the second process chamber 240 having independent processing spaces. Although not shown, the substrate processing apparatus 200 may include three or more process chambers. In this case, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention may be implemented to supply gas to the gas injection units of each of the process chambers.

[0023] When the substrate processing apparatus 200 performs a processing process on the substrate 300, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can supply gas to the substrate processing apparatus 200.

[0024] To this end, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention may include a first gas supply unit 2 for supplying gas to the first gas injection unit 210 and a second gas supply unit 3 for supplying gas to the second gas injection unit 220. The first gas supply unit 2 may include a first supply line 21 connected to the first gas injection unit 210, a plurality of first gas supply mechanisms 22 connected to the first supply line 21, and a first measurement mechanism 23 for measuring a first pressure of the first supply line 21. The second gas supply unit 3 may include a second supply line 31 connected to the second gas injection unit 220, a plurality of second gas supply mechanisms 32 connected to the second supply line 31, and a second measurement mechanism 33 for measuring a second pressure of the second supply line 31.

[0025] Here, the first measurement mechanism 23 can check whether the first pressure deviates from a first reference value, and the second measurement mechanism 33 can check whether the second pressure deviates from a second reference value.

[0026] Therefore, when any of the first gas supply mechanism 22 and the second gas supply mechanism 32 is connected in parallel to the substrate processing apparatus 200, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can be implemented to use the first measurement mechanism 23 and the second measurement mechanism 33 to determine whether a failure or abnormal operation has occurred in one of the first gas supply mechanism 22 and the second gas supply mechanism 32 connected in parallel to the substrate processing apparatus 200. For example, when the first gas supply mechanism 22 of the first gas supply mechanism 22 and the second gas supply mechanism 32 connected in parallel to the substrate processing apparatus 200 fails or operates abnormally, the first measurement mechanism 23 can determine that the first gas supply mechanism 22 has failed or operated abnormally because the first pressure deviates from the first reference value.

[0027] Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can be embodied so that a failure or abnormal operation of the gas supply mechanisms 22 and 32 can be confirmed in real time even during a processing process on the substrate 300. Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can reduce damage and loss by preventing the processing process on the substrate 300 from being continued when a failure or abnormal operation occurs in the gas supply mechanisms 22 and 32. Furthermore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can reduce the time required from the time a failure or abnormal operation occurs in the gas supply mechanisms 22 and 32 until subsequent processing such as repair is performed, thereby improving the operating rate of the substrate processing apparatus 200 and contributing to improved productivity.

[0028] Hereinafter, the first gas supply unit 2 and the second gas supply unit 3 will be specifically described with reference to the accompanying drawings.

[0029] 2 to 5, the first gas supply unit 2 supplies gas to the first gas injection unit 210. The first gas supply unit 2 may supply a process gas used in a processing process for the substrate 300, a purge gas for purging, etc. to the first gas injection unit 210. The first gas supply unit 2 may sequentially supply two or more types of process gases to the first gas injection unit 210 depending on the process order. For example, when the substrate processing apparatus 200 performs a deposition process, the first gas supply unit 2 may supply a source gas and a reactant gas to the first gas injection unit 210. For example, when the substrate processing apparatus 200 performs an etching process, the first gas supply unit 2 may supply an etching gas to the first gas injection unit 210.

[0030] The first gas supply unit 2 may include the first supply line 21 , the first gas supply mechanism 22 , and the first measurement mechanism 23 .

[0031] The first supply line 21 is connected to the first gas injection unit 210. The gas supplied from the first gas supply mechanism 22 may be supplied to the first gas injection unit 210 through the first supply line 21. The first supply line 21 may be implemented as a hose, a pipe, etc. The first supply line 21 may also be implemented as a hole formed in a predetermined structure.

[0032] The first gas supply mechanisms 22 are connected to the first supply lines 21. The first gas supply mechanisms 22 may supply gas to the first supply lines 21. The first gas supply mechanisms 22 may be connected to gas storage mechanisms (not shown). The first gas supply mechanisms 22 may supply gas provided from the gas storage mechanisms to the first supply lines 21, thereby supplying gas to the first gas injection unit 210 through the first supply lines 21. The first gas supply mechanisms 22 may include a valve and a mass flow controller (MFC) that selectively pass gases. The first gas supply mechanisms 22 may further include a buffer tank for increasing the supply pressure of each gas. The first gas supply mechanisms 22 may be connected to different portions of the first supply lines 21 along the direction in which the first supply lines 21 are arranged. The first gas supply mechanisms 22 may supply different gases. Some of the first gas supply mechanisms 22 may supply the same gas, while others may supply different gases. The first gas supply mechanisms 22 may be operated under the control of a control module (not shown) to supply the first gas injection unit 210 with a predetermined gas flow rate range in accordance with a process sequence. Meanwhile, when the first gas injection unit 210 injects a plurality of different source gases for forming a composite film, the plurality of first gas supply mechanisms 22 may supply different source gases to the first supply line 21. In this case, the corresponding first gas supply mechanisms 22 may simultaneously supply different source gases to the first supply line 21. By supplying different source gases to the first supply line 21 through the plurality of first gas supply mechanisms 22, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can accurately control the flow rate of each source gas, thereby contributing to the formation of a composite film having a desired composition ratio in the substrate processing apparatus 200.

[0033] In FIG. 2, the first gas supply unit 2 is shown as including three first gas supply mechanisms 22a, 22b, and 22c, but is not limited thereto, and the first gas supply unit 2 may also include two or four or more first gas supply mechanisms 22.

[0034] The first measurement mechanism 23 measures the first pressure. The first pressure is the pressure inside the first supply line 21 and may vary depending on the type and flow rate of gas flowing along the first supply line 21. The first measurement mechanism 23 may determine whether the first pressure deviates from a first reference value. The first reference value may be determined depending on the type and flow rate of gas to be supplied to the first gas injection unit 210. The first reference value may be a pressure value derived through a preliminary test or the like and may be stored in the first measurement mechanism 23 in advance. The first reference value may be a single value. The first reference value may be a range value having an upper limit and a lower limit. In this case, the first measurement mechanism 23 may determine that the first pressure deviates from the first reference value when the first pressure is less than the lower limit of the first reference value or when the first pressure exceeds the upper limit of the first reference value. When the first pressure is equal to or greater than the lower limit of the first reference value and equal to or less than the upper limit of the first reference value, the first measurement mechanism 23 can determine that the first pressure does not deviate from the first reference value and belongs to the first reference value. The first measurement mechanism 23 can include a pressure gauge.

[0035] When the first measurement mechanism 23 determines that the first pressure deviates from the first reference value, the first gas supply mechanism 22 can stop supplying gas. As a result, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can further reduce damage and loss due to a malfunction or abnormal operation of the first gas supply mechanism 22. In this case, when the first measurement mechanism 23 determines that the first pressure deviates from the first reference value, the first measurement mechanism 23 can generate a first error signal and provide the first error signal to the first gas supply mechanism 22. The first gas supply mechanism 22 can stop supplying gas upon receiving the first error signal. The first measurement mechanism 23 can also provide the first error signal to the control module. In this case, the first gas supply mechanism 22 can stop supplying gas under the control of the control module. The first measurement mechanism 23 can also provide the first error signal to the substrate processing apparatus 200. The substrate processing apparatus 200 can stop operation of the first gas injection unit 210 and components associated with the first gas injection unit 210 upon receiving the first error signal. The substrate processing apparatus 200 may suspend the entire operation upon receiving the first error signal.

[0036] The first measurement mechanism 23 may also determine whether the first gas pressure of the first pressure deviates from the first reference value. In this case, the first gas supply mechanism 22 may initially supply gas at a maximum pressure and then gradually reduce the pressure, as shown in FIG. 5. In FIG. 5, the vertical axis may represent gas pressure, and the vertical axis may represent time. The first gas pressure may correspond to the maximum pressure. The first measurement mechanism 23 may determine whether the magnitude of the first gas pressure deviates from the first reference value. The first measurement mechanism 23 may determine whether the magnitude of the first gas pressure deviates from the first reference value by taking into account not only the magnitude of the first gas pressure but also the timing at which the first gas pressure appears.

[0037] The first measuring mechanism 23 can compare the first pressure with the first reference value, which differs for each first gas supply mechanism 22. In this case, the first reference value can be set to be different for each first gas supply mechanism 22. Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can be applied to the substrate processing apparatus 200 that performs a processing process on the substrate 300 using various types of gases at various flow rates, thereby improving versatility.

[0038] The first measurement mechanism 23 may continuously check whether the first pressure deviates from the first reference value while a processing process is being performed on the substrate 300. The first measurement mechanism 23 may also check whether the first pressure deviates from the first reference value when the process gas is supplied to the first supply line 21. The first measurement mechanism 23 may also check whether the first pressure deviates from the first reference value only when a gas to be measured is supplied through the first supply line 21 according to a process order. For example, when the first gas supply unit 2 supplies gases to the first gas injection unit 210 in the order of source gas, purge gas, reactive gas, and purge gas, the first measurement mechanism 23 may check whether the first pressure deviates from the first reference value only when the source gas and reactive gas are supplied. In this case, the first measurement mechanism 23 may not check whether the first pressure deviates from the first reference value when the purge gas is supplied. Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can reduce the load on the first measurement mechanism 23 by checking whether the first pressure is outside the first reference value, thereby extending the service life of the first measurement mechanism 23. The process sequence and the gas to be measured can be stored in the first measurement mechanism 23 in advance.

[0039] 2 to 5, the first gas supply unit 2 may include a first purge mechanism 24.

[0040] The first purge mechanism 24 supplies a purge gas to the first supply line 21. The purge gas supplied by the first purge mechanism 24 to the first supply line 21 can perform a purge function of purging gas remaining in the first supply line 21. As a result, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can prevent the first supply line 21 from being contaminated by gas remaining in the first supply line 21. The first purge mechanism 24 can continuously supply a purge gas to the first supply line 21. As a result, the first purge mechanism 24 can have a constant purge function. When the first purge mechanism 24 continuously supplies a purge gas to the first supply line 21, the gas supplied by the first gas supply mechanism 22 to the first supply line 21 can be supplied to the first gas injection unit 210 together with the purge gas. In this case, the purge gas supplied by the first purge mechanism 24 can also function as a carrier gas that helps the flow of the gas supplied by the first gas supply mechanism 22.

[0041] The first purge mechanism 24 may be connected to one end of the first supply line 21. In this case, the other end of the first supply line 21 may be connected to the first gas injection unit 210. The first gas supply mechanism 22 may be connected to the first supply line 21 between one end of the first supply line 21 and the other end of the first supply line 21. As a result, the first purge mechanism 24 may be disposed at a position where all gas supplied to the first supply line 21 by the first gas supply mechanism 22 can be purged. The first measurement mechanism 23 may be connected to the first supply line 21 between the first purge mechanism 24 and the first gas supply mechanism 22. In this case, the first measurement mechanism 23 may be connected to the first supply line 21 between the first purge mechanism 24 and the first gas supply mechanism 22 disposed closest to the first purge mechanism 24 along the direction in which the first supply line 21 is disposed. 2, the first measurement mechanism 23 may be connected to the first supply line 21 between the first purge mechanism 24 and the first gas supply mechanism 22c. Thus, the first purge mechanism 24 may prevent the gas supplied to the first supply line 21 by the first gas supply mechanism 22c from flowing back toward the first measurement mechanism 23 through the supply of purge gas. Therefore, the first purge mechanism 24 may prevent contamination of the first measurement mechanism 23, thereby contributing to extending the service life of the first measurement mechanism 23. Furthermore, the first purge mechanism 24 may improve the accuracy of the measured first pressure value by preventing contamination of the first measurement mechanism 23.

[0042] When the first purge mechanism 24 is provided, the first measurement mechanism 23 can check whether the first pressure deviates from the first reference value in all cases except when only the purge gas supplied by the first purge mechanism 24 flows through the first supply line 21. That is, the first measurement mechanism 23 does not check whether the first pressure deviates from the first reference value when only the purge gas supplied by the first purge mechanism 24 flows through the first supply line 21. Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can reduce the load on the first measurement mechanism 23, thereby extending the service life of the first measurement mechanism 23.

[0043] 2 to 5, the first gas supply unit 2 may include a first detection mechanism 25.

[0044] The first detection mechanism 25 detects the first gas supply mechanism 22 that has injected gas whose first pressure deviates from the first reference value. When the first measurement mechanism 23 determines that the first pressure deviates from the first reference value, the first measurement mechanism 23 can provide the first error signal to the first detection mechanism 25. When the first detection mechanism 25 receives the first error signal, it can detect that the first gas supply mechanism 22 supplied gas when the first measurement mechanism 23 generated the first error signal. In this case, the first gas supply mechanism 22 can provide the first detection mechanism 25 with first operation information regarding the time when gas was supplied and the time when gas supply was interrupted. Based on the first error signal and the first operation information, the first detection mechanism 25 can detect the first gas supply mechanism 22 that has injected gas whose first pressure deviates from the first reference value. The first detection mechanism 25 can display the detected first gas supply mechanism 22 on a display device (not shown). When the first detection mechanism 25 detects that the first gas supply mechanism 22 has injected gas such that the first pressure is outside the first reference value, the first detection mechanism 25 can output an alarm via an alarm device (not shown). As a result, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can notify an operator of information about the first gas supply mechanism 22 that requires subsequent processing, such as repair, using the first detection mechanism 25, thereby contributing to further shortening the time required for subsequent processing.

[0045] 2 to 5, the second gas supply unit 3 supplies gas to the second gas injection unit 220. The second gas supply unit 3 may supply a process gas used in a processing process for the substrate 300, a purge gas for purging, etc. to the second gas injection unit 220. The second gas supply unit 3 may also supply two or more types of process gases to the second gas injection unit 220 sequentially according to the process order. For example, when the substrate processing apparatus 200 performs a deposition process, the second gas supply unit 3 may supply a source gas and a reaction gas to the second gas injection unit 220. For example, when the substrate processing apparatus 200 performs an etching process, the second gas supply unit 3 may supply an etching gas to the second gas injection unit 220.

[0046] The second gas supply unit 3 may include the second supply line 31 , the second gas supply mechanism 32 , and the second measurement mechanism 33 .

[0047] The second supply line 31 is connected to the second gas injection unit 220. The gas supplied from the second gas supply mechanism 32 may be supplied to the second gas injection unit 220 through the second supply line 31. The second supply line 31 may be implemented as a hose, a pipe, etc. The second supply line 31 may also be implemented as a hole formed in a predetermined structure.

[0048] The second gas supply mechanisms 32 are connected to the second supply line 31. The second gas supply mechanisms 32 may supply gas to the second supply line 31. The second gas supply mechanisms 32 may be connected to gas storage mechanisms (not shown). The second gas supply mechanisms 32 may supply gas provided from the gas storage mechanisms to the second supply line 31, thereby supplying gas to the second gas injection unit 220 through the second supply line 31. The second gas supply mechanisms 32 may include a valve, a mass flow controller (MFC), etc. that selectively pass gas. The second gas supply mechanisms 32 may further include a buffer tank for increasing the supply pressure of the gas. The second gas supply mechanisms 32 may be connected to different portions of the second supply line 31 along the direction in which the second supply line 31 is arranged. The second gas supply mechanisms 32 may supply different gases. Some of the second gas supply mechanisms 32 may supply the same gas, and the remaining parts may supply different gases. The second gas supply mechanism 32 may operate under the control of the control module so that gases determined in a process order are supplied to the second gas injection unit 220 within a predetermined flow rate range. Meanwhile, when the second gas injection unit 220 injects a plurality of different source gases for forming a composite film, the plurality of second gas supply mechanisms 32 may supply different source gases to the second supply line 31, respectively. In this case, the corresponding second gas supply mechanism 32 may simultaneously supply different source gases to the second supply line 31. By supplying different source gases to the second supply line 31 through the plurality of second gas supply mechanisms 32, respectively, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can accurately control the flow rate of each source gas, thereby contributing to the formation of a composite film having a target composition ratio in the substrate processing apparatus 200.

[0049] In FIG. 2, the second gas supply unit 3 is shown as including three second gas supply mechanisms 32a, 32b, and 32c, but is not limited thereto, and the second gas supply unit 3 may also include two or four or more second gas supply mechanisms 32.

[0050] The second measurement mechanism 33 measures the second pressure. The second measurement mechanism 33 may include a pressure gauge. The second pressure is the pressure inside the second supply line 31 and may vary depending on the type and flow rate of the gas flowing along the second supply line 31. The second measurement mechanism 33 may determine whether the second pressure deviates from the second reference value. The second reference value may be determined depending on the type and flow rate of the gas to be supplied to the second gas injection unit 220. The second reference value may be a pressure value derived through a preliminary test or the like and may be stored in the second measurement mechanism 33 in advance. The second reference value may be a single value. The second reference value may also be a range value having an upper limit and a lower limit. In this case, the second measurement mechanism 33 may determine that the second pressure deviates from the second reference value when the second pressure is less than the lower limit of the second reference value or when the second pressure exceeds the upper limit of the second reference value. The second measurement mechanism 33 can determine that the second pressure belongs to the second reference value without deviating from the second reference value when the second pressure is greater than or equal to the lower limit of the second reference value and less than or equal to the upper limit of the second reference value.

[0051] For example, in the case where the first gas supply mechanism 22 and the second gas supply mechanism 32 are connected in a parallel configuration, in a section (NS, shown in FIG. 5) where both the first gas supply mechanism 22 and the second gas supply mechanism 32 operate normally, the first pressure may fall within the first reference value and the second pressure may fall within the second reference value. In this case, the first measurement mechanism 23 may confirm that the first pressure falls within the first reference value, and the second measurement mechanism 33 may confirm that the second pressure falls within the second reference value. However, if a failure or abnormal operation occurs in the second gas supply mechanism 32 and it is no longer able to supply gas, the gas supplied by the second gas supply mechanism 32 may be supplied to the first supply line 21 via the first gas supply mechanism 22. In a section (FS, shown in FIG. 5) where a failure or abnormal operation occurs in either the first gas supply mechanism 22 or the second gas supply mechanism 32 connected in a parallel configuration, the first pressure exceeds the upper limit of the first reference value and the second pressure falls below the lower limit of the second reference value. In this case, the first measurement mechanism 23 can confirm that the first pressure has deviated from the first reference value, and the second measurement mechanism 33 can confirm that the second pressure has deviated from the second reference value.

[0052] When the second measurement mechanism 33 determines that the second pressure deviates from the second reference value, the second gas supply mechanism 32 can stop supplying gas. As a result, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can further reduce damage and loss due to a malfunction or abnormal operation of the second gas supply mechanism 32. In this case, when the second measurement mechanism 33 determines that the second pressure deviates from the second reference value, the second measurement mechanism 33 can generate a second error signal and provide the second error signal to the second gas supply mechanism 32. The second gas supply mechanism 32 can stop supplying gas upon receiving the second error signal. The second measurement mechanism 33 can also provide the second error signal to the control module. In this case, the second gas supply mechanism 32 can stop supplying gas under the control of the control module. The second measurement mechanism 33 can also provide the second error signal to the substrate processing apparatus 200. When the substrate processing apparatus 200 receives the second error signal, the substrate processing apparatus 200 can stop operation of the second gas injection unit 220 and components associated with the second gas injection unit 220. The substrate processing apparatus 200 may suspend the entire operation upon receiving the second error signal.

[0053] The second measurement mechanism 33 can also determine whether the second gas pressure of the second pressure deviates from the second reference value. In this case, the second gas supply mechanism 32 can initially supply gas at a maximum pressure and then gradually reduce the pressure, as shown in FIG. 5 . The second gas pressure may correspond to the maximum pressure. The second measurement mechanism 33 can determine whether the magnitude of the second gas pressure deviates from the second reference value. The second measurement mechanism 33 can determine whether the magnitude of the second gas pressure deviates from the second reference value by taking into account not only the magnitude of the second gas pressure but also the timing at which the second gas pressure appears.

[0054] The second measurement mechanism 33 can compare the second pressure with the second reference value, which differs for each second gas supply mechanism 32. In this case, the second reference value can be set differently for each first gas supply mechanism 22. Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can be applied to the substrate processing apparatus 200 that performs a processing step on the substrate 300 using various types of gases at various flow rates, thereby improving versatility.

[0055] The second measurement mechanism 33 can continuously check whether the second pressure deviates from the second reference value while a processing process is being performed on the substrate 300. The second measurement mechanism 33 can also check whether the second pressure deviates from the second reference value when the process gas is supplied to the second supply line 31. The second measurement mechanism 33 can also check whether the second pressure deviates from the second reference value only when the gas to be measured is supplied through the second supply line 31 according to the process order. For example, when the second gas supply unit 3 supplies gases to the second gas injection unit 220 in the order of source gas, purge gas, reactive gas, and purge gas, the second measurement mechanism 33 can check whether the second pressure deviates from the second reference value only when the source gas and reactive gas are supplied. In this case, the second measurement mechanism 33 may not check whether the second pressure deviates from the second reference value when the purge gas is supplied. Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can reduce the load on the second measurement mechanism 33 by checking whether the second pressure is outside the second reference value, thereby extending the service life of the second measurement mechanism 33. The process sequence and the gas to be measured can be stored in the second measurement mechanism 33 in advance.

[0056] 2 to 5, the second gas supply unit 3 may include a second purge mechanism .

[0057] The second purge mechanism 34 supplies a purge gas to the second supply line 31. The purge gas supplied by the second purge mechanism 34 to the second supply line 31 can perform a purge function of purging gas remaining in the second supply line 31. As a result, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can prevent the second supply line 31 from being contaminated by gas remaining in the second supply line 31. The second purge mechanism 34 can continuously supply a purge gas to the second supply line 31. As a result, the second purge mechanism 34 can have a constant purge function. When the second purge mechanism 34 continuously supplies a purge gas to the second supply line 31, the gas supplied by the second gas supply mechanism 32 to the second supply line 31 can be supplied to the second gas injection unit 220 together with the purge gas. In this case, the purge gas supplied by the second purge mechanism 34 can also function as a carrier gas that helps the flow of the gas supplied by the second gas supply mechanism 32.

[0058] The second purge mechanism 34 may be connected to one end of the second supply line 31. In this case, the other end of the second supply line 31 may be connected to the second gas injection unit 220. The second gas supply mechanism 32 may be connected to the second supply line 31 between one end of the second supply line 31 and the other end of the second supply line 31. As a result, the second purge mechanism 34 may be disposed at a position where all gas supplied to the second supply line 31 by the second gas supply mechanism 32 can be purged. The second measurement mechanism 33 may be connected to the second supply line 31 between the second purge mechanism 34 and the second gas supply mechanism 32. In this case, the second measurement mechanism 33 may be connected to the second supply line 31 between the second purge mechanism 34 and the second gas supply mechanism 32 disposed closest to the second purge mechanism 34 along the direction in which the second supply line 31 is disposed. 2, the second measurement mechanism 33 may be connected to the second supply line 31 between the second purge mechanism 34 and the second gas supply mechanism 32c. Thus, the second purge mechanism 34 may supply a purge gas to prevent the gas supplied to the second supply line 31 by the second gas supply mechanism 32c from flowing back toward the second measurement mechanism 33. Therefore, the second purge mechanism 34 may prevent contamination of the second measurement mechanism 33, thereby contributing to extending the service life of the second measurement mechanism 33. Furthermore, the second purge mechanism 34 may improve the accuracy of the measured value of the second pressure by preventing contamination of the second measurement mechanism 33.

[0059] When the second purge mechanism 34 is provided, the second measurement mechanism 33 can check whether the second pressure deviates from the second reference value in all cases except when only the purge gas supplied by the second purge mechanism 34 flows through the second supply line 31. That is, the second measurement mechanism 33 does not check whether the second pressure deviates from the second reference value when only the purge gas supplied by the second purge mechanism 34 flows through the second supply line 31. Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can reduce the load on the second measurement mechanism 33, thereby extending the service life of the second measurement mechanism 33.

[0060] 2 to 5, the second gas supply unit 3 may include a second detection mechanism 35.

[0061] The second detection mechanism 35 detects the second gas supply mechanism 32 that has injected the gas whose second pressure deviates from the second reference value. When the second measurement mechanism 33 determines that the second pressure deviates from the second reference value, the second measurement mechanism 33 can provide the second error signal to the second detection mechanism 35. When the second detection mechanism 35 receives the second error signal, it can detect that the second gas supply mechanism 32 supplied gas when the second measurement mechanism 33 generated the second error signal. In this case, the second gas supply mechanism 32 can provide the second detection mechanism 35 with second operation information regarding the time when the gas was supplied and the time when the gas supply was stopped. The second detection mechanism 35 can detect the second gas supply mechanism 32 that has injected the gas whose second pressure deviates from the second reference value based on the second error signal and the second operation information. The second detection mechanism 35 can display the detected second gas supply mechanism 32 on a display device. The second detection mechanism 35 can also output an alarm via the alarm device when it detects that the second gas supply mechanism 32 has injected gas such that the second pressure is outside the second reference value. As a result, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can notify an operator of information about the second gas supply mechanism 32 that requires subsequent processing, such as repair, using the second detection mechanism 35, thereby contributing to further shortening the time required for subsequent processing.

[0062] 2 to 5, any one of the second gas supply mechanisms 32 and any one of the first gas supply mechanisms 22 may be connected to each other via a first connection mechanism 11. For example, the first connection mechanism 11 may connect the second gas supply mechanism 32b and the first gas supply mechanism 22b. In this case, the second gas supply mechanism 32b and the first gas supply mechanism 22b may supply the same gas, for example, pile-up gas. One side of the first connection mechanism 11 may be connected to a gas storage mechanism (not shown) and the other side may be connected to both the second gas supply mechanism 32b and the first gas supply mechanism 22b. As a result, the first connection mechanism 11 can deliver gas supplied from the gas storage mechanism to both the second gas supply mechanism 32b and the first gas supply mechanism 22b.

[0063] In this case, when the first measurement mechanism 23 confirms that the first pressure deviates from the first reference value due to the gas injected by the first gas supply mechanism 22b, the first connection mechanism 11 can adjust the gas supply amount. For example, if the gas supply amount supplied by the first connection mechanism 11 is defined as 1 when both the first gas supply mechanism 22b and the second gas supply mechanism 32b are operating normally, the first connection mechanism 11 can adjust the gas supply amount to 0.5. As a result, in the case where a failure or abnormal operation occurs in the first gas supply mechanism 22b, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can prevent the second gas supply mechanism 32b from supplying an excessive amount of gas using the first connection mechanism 11. In this case, the second pressure due to the gas supplied by the second gas supply mechanism 32b can fall within the second reference value due to the gas supply amount adjustment by the first connection mechanism 11. Therefore, even if the supply of gas to the first gas injection unit 210 is interrupted due to a malfunction or abnormal operation of the first gas supply mechanism 22b, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can continue to supply gas to the second gas injection unit 220. As a result, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can perform the processing step using the second gas injection unit 220 without interruption, thereby further reducing damage and loss caused by a malfunction or abnormal operation of the first gas supply mechanism 22b.

[0064] In this case, when the second measurement mechanism 33 confirms that the second pressure deviates from the second reference value due to the gas injected by the second gas supply mechanism 32b, the first connection mechanism 11 can adjust the gas supply amount. For example, if the gas supply amount supplied by the first connection mechanism 11 is defined as 1 when both the first gas supply mechanism 22b and the second gas supply mechanism 32b are operating normally, the first connection mechanism 11 can adjust the gas supply amount to 0.5. As a result, when a failure or abnormal operation occurs in the second gas supply mechanism 32b, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can prevent the first gas supply mechanism 22b from supplying an excessive amount of gas using the first connection mechanism 11. In this case, the first pressure due to the gas supplied by the first gas supply mechanism 22b can fall within the first reference value due to the gas supply amount adjustment by the first connection mechanism 11. Therefore, even if the supply of gas to the second gas injection unit 220 is interrupted due to a malfunction or abnormal operation of the second gas supply mechanism 32b, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can continue to supply gas to the first gas injection unit 210. As a result, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can perform the processing step using the first gas injection unit 210 without interruption, thereby further reducing damage and loss caused by a malfunction or abnormal operation of the second gas supply mechanism 32b.

[0065] 2 shows that only the first gas supply mechanism 22b and the second gas supply mechanism 32b are connected to each other by the first connection mechanism 11, but the present invention is not limited thereto, and two or more first gas supply mechanisms 22 and two or more second gas supply mechanisms 32 connected to each other in a parallel structure by a connection mechanism (not shown) may be provided. In this case, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention may include a plurality of the connection mechanisms.

[0066] 2 to 5, a gas supply device 1 for a substrate processing apparatus according to the present invention may include a storage unit 4 and a control unit 5. FIG.

[0067] The storage unit 4 accumulates pressure data measured by the first measurement mechanism 23 and the second measurement mechanism 33. The first measurement mechanism 23 may measure the first pressure and then provide the first pressure to the storage unit 4. The second measurement mechanism 33 may measure the second pressure and then provide the second pressure to the storage unit 4. The storage unit 4 may accumulate pressure data by storing the first pressure provided from the first measurement mechanism 23 and the second pressure provided from the second measurement mechanism 33.

[0068] The control unit 5 sets the first and second reference values. The control unit 5 can change the first and second reference values ​​using pressure data accumulated in the storage unit 4. For example, after performing a processing process on the substrate 300 by supplying gas based on the first and second reference values ​​set by an operator, if evaluation data on the quality of the substrate 300 after the processing process is completed is generated, the control unit 5 can evaluate the appropriateness of each of the first and second reference values ​​based on the evaluation data and the pressure data and change the first and second reference values. Therefore, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention can contribute to further improving the quality of the substrate 300 after the processing process is completed by repeatedly performing a processing process on the substrate 300 by supplying gas and changing the first and second reference values ​​to the most appropriate ones for the corresponding processing process based on the accumulated evaluation data and pressure data. When the control unit 5 changes the first reference value and the second reference value, it can provide the changed first reference value and the changed second reference value to the first measurement mechanism 23 and the second measurement mechanism 33.

[0069] Meanwhile, in the above, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention has been described in the embodiment including the first gas supply unit 2 and the second gas supply unit 3. However, the present invention is not limited thereto, and the gas supply apparatus 1 for a substrate processing apparatus according to the present invention may include three or more gas supply units. In this case, the substrate processing apparatus 200 may include three or more gas injection units. Accordingly, the gas supply apparatus 1 for a substrate processing apparatus according to the present invention may be embodied to include a plurality of supply lines individually connected to the plurality of gas injection units, a plurality of gas supply mechanisms connected to each of the supply lines, and a plurality of measurement mechanisms for measuring the pressure of each of the supply lines. Each of the measurement mechanisms may check whether the pressure deviates from a reference value.

[0070] The present invention described above is not limited to the above-described embodiments and accompanying drawings, and it will be apparent to those skilled in the art to which the present invention pertains that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention.

Claims

1. a first gas supply unit for supplying gas to the first gas injection unit; a second gas supply section for supplying gas to the second gas injection section; a control unit, and a reservoir; the first gas supply unit includes a first supply line connected to the first gas injection unit, a plurality of first gas supply mechanisms connected to the first supply line, and a first measurement mechanism that measures a first pressure of the first supply line; the second gas supply unit includes a second supply line connected to the second gas injection unit, a plurality of second gas supply mechanisms connected to the second supply line, and a second measurement mechanism that measures a second pressure of the second supply line; the first measurement mechanism confirms whether the first pressure is outside a first reference value set by the control unit; the second measurement mechanism confirms whether the second pressure is outside a second reference value set by the control unit; the storage unit accumulates pressure data measured by the first measurement mechanism and the second measurement mechanism, 2. The gas supply apparatus for a substrate processing apparatus, wherein the control unit changes the first reference value and the second reference value using pressure data stored in the storage unit.

2. 2. The gas supply apparatus for a substrate processing apparatus according to claim 1, wherein the first gas supply unit includes a first purge mechanism that supplies a purge gas to the first supply line.

3. 3. The gas supply apparatus for a substrate processing apparatus according to claim 2, wherein the first purge mechanism continuously supplies purge gas to the first supply line.

4. 3. The gas supply apparatus for a substrate processing apparatus according to claim 2, wherein the first measurement mechanism is connected to the first supply line between the first purge mechanism and the first gas supply mechanism.

5. 3. The gas supply device for a substrate processing apparatus according to claim 2, wherein the first measurement mechanism checks whether the first pressure deviates from the first reference value when process gas is supplied to the first supply line.

6. 2. The gas supply device for a substrate processing apparatus according to claim 1, wherein the first measuring mechanism checks whether a first gas pressure of the first pressure is outside the first reference value.

7. 2. The gas supply device for a substrate processing apparatus according to claim 1, wherein the first measurement mechanism compares the first pressure with the first reference value, which differs for each of the first gas supply mechanisms.

8. 2. The gas supply device for a substrate processing apparatus according to claim 1, wherein the first gas supply mechanism stops supplying gas when the first measurement mechanism confirms that the first pressure deviates from the first reference value.

9. 2. The gas supply device for a substrate processing apparatus according to claim 1, wherein the first gas supply unit includes a first detection mechanism that detects, among the first gas supply mechanisms, a first gas supply mechanism that injects gas whose first pressure deviates from the first reference value.

10. any one of the first gas supply mechanisms and any one of the second gas supply mechanisms are connected to each other via a first connection mechanism, 2. The gas supply device for a substrate processing apparatus according to claim 1, characterized in that when the first measurement mechanism confirms that the first pressure deviates from the first reference value due to the gas injected by the first gas supply mechanism connected to the first connection mechanism, the first connection mechanism adjusts the amount of gas supplied.

11. 2. The gas supply device for a substrate processing apparatus according to claim 1, wherein the first gas supply unit and the second gas supply unit supply gas to the first gas injection unit and the second gas injection unit installed in a first process chamber of the substrate processing apparatus.

12. the first gas supply unit supplies gas to the first gas injection unit installed in a first process chamber of the substrate processing apparatus; 2. The gas supply device for a substrate processing apparatus according to claim 1, wherein the second gas supply unit supplies gas to the second gas injection unit installed in a second process chamber of the substrate processing apparatus.

13. a plurality of supply lines individually connected to each of the plurality of gas injection units; a plurality of gas supply mechanisms coupled to each of the supply lines; a plurality of measuring mechanisms for measuring the pressure in each of said supply lines; a control unit, and a reservoir; The measuring mechanisms each check whether the pressure is outside a reference value set by the control unit; the storage unit accumulates pressure data measured by the plurality of measurement mechanisms; 2. A gas supply apparatus for a substrate processing apparatus, wherein the control unit changes the reference value using pressure data stored in the storage unit.

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