Semiconductor Module

Abstract

The present invention reduces turn-on loss of a switching element.　A semiconductor module (10) has: a terminal case (11) in which first and second input terminals (11a1, 11a2) are disposed on a first short-side section (11a), and a second control terminal (11d1) and a second auxiliary terminal (11d2) are disposed on a second long-side section (11d); a first insulating circuit board (13a) disposed on the side of the second short-side section (11b) of the terminal case (11); and a second insulating circuit board (13b) disposed on the side of the first short-side section (11a). A fifth metal pattern (15b2) extending in the longitudinal direction of the terminal case (11) is provided on the front surface of the second insulating circuit board (13b). The semiconductor module (10) further includes a first wiring member (16a) having one end connected to a position on a fifth metal pattern (15b) further from the first short-side section (11a) than a position half the length of the second insulating circuit board (13b) in the longitudinal direction, and having the other end connected to the second auxiliary terminal (11d2).

Description

[Technical Field]

[0001] The present invention relates to a semiconductor module. [Background technology]

[0002] Some semiconductor modules used in power conversion devices and the like include gate terminals and auxiliary terminals (e.g., sense emitter terminals, source or drain terminals, etc.) for connection to a drive circuit that drives a switching element (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2015 / 076257 [Patent Document 2] Japanese Patent Application Laid-Open No. 2004-22960 Summary of the Invention [Problem to be solved by the invention]

[0004] The object of this embodiment is to reduce the turn-on loss of the switching element. [Means for solving the problem]

[0005] According to one aspect of the present invention, there is provided a terminal case having a first input terminal and a second input terminal arranged on a first short side, an output terminal arranged on a second short side opposite the first short side, a first control terminal and a first auxiliary terminal arranged on a first long side, and a second control terminal and a second auxiliary terminal arranged on a second long side opposite the first long side, the terminal case being provided on a front surface with a first switching element, each having a first input electrode, a first output electrode, and a first control electrode, a first metal pattern electrically connected to the first input terminal and the first input electrode, a second metal pattern electrically connected to the output terminal, the first output electrode, and the first auxiliary terminal, and a third metal pattern electrically connected to the first control electrode and the first control terminal, and a first insulating circuit board arranged on the second short side within an area surrounded by the terminal case, the second input electrode, the second output electrode, and the a fourth metal pattern electrically connected to the first input terminal and the first metal pattern; a fifth metal pattern electrically connected to the second input terminal, the second output electrode, and the second auxiliary terminal and extending in the longitudinal direction of the terminal case; a sixth metal pattern electrically connected to the second input electrode and the second metal pattern; and a seventh metal pattern electrically connected to the second control electrode and the second control terminal, which are provided on the front surface of the terminal case; a second insulating circuit board arranged on the side of the first short side within an area enclosed by the terminal case; and a first wiring member having one end connected to a position on the fifth metal pattern farther from the first short side than a position halfway along the length of the second insulating circuit board in the longitudinal direction, and the other end connected to the second auxiliary terminal.

[0006] The plurality of second switching elements are arranged in threes in the longitudinal direction on the front surface of the second insulating circuit board, the fifth metal pattern has three connection regions in the longitudinal direction to which the three second input electrodes are electrically connected via a second wiring member, and the position of the first wiring member may be near one of two of the three connection regions that are farther from the first short side portion than another connection region.

[0007] The plurality of second switching elements may be arranged in threes in the longitudinal direction on the front surface of the second insulating circuit board, the fifth metal pattern may have three connection regions in the longitudinal direction to which the three second input electrodes are electrically connected via a second wiring member, and the position of the first wiring member may be near the connection region farthest from the first short side portion among the three connection regions.

[0008] According to one aspect of the present invention, there is provided a terminal case having a first input terminal and a second input terminal arranged on a first short side, an output terminal arranged on a second short side opposite the first short side, a first control terminal and a first auxiliary terminal arranged on a first long side, and a second control terminal and a second auxiliary terminal arranged on a second long side opposite the first long side, the terminal case having on its front surface: a plurality of first switching elements each having a first input electrode, a first output electrode, and a first control electrode; a first metal pattern electrically connected to the first input terminal and the first input electrode; a second metal pattern electrically connected to the output terminal, the first output electrode, and the first auxiliary terminal; and a third metal pattern electrically connected to the first control electrode and the first control terminal; and a first insulating circuit board arranged on the second short side within an area surrounded by the terminal case; a plurality of second switching elements each having a second input electrode, a second output electrode, and a second control electrode; a fourth metal pattern electrically connected to the second input terminal, the second output electrode, and the second auxiliary terminal and extending in the longitudinal direction of the terminal case; a sixth metal pattern electrically connected to the second input electrode and the second metal pattern; and a seventh metal pattern electrically connected to the second control electrode and the second control terminal, the front surface of the terminal case being provided with a second insulating circuit board arranged on the side of the first short side within an area enclosed by the terminal case; and a first wiring member having one end connected to a position on the fifth metal pattern closer to the first short side than a position halfway along the length of the second insulating circuit board in the longitudinal direction, and the other end connected to the second auxiliary terminal, wherein the seventh metal pattern or the second wiring member electrically connecting the seventh metal pattern and the second control terminal includes at least one folded portion in a plan view.

[0009] The seventh metal pattern may include the folded portion that is folded in the longitudinal direction in a plan view.

[0010] The seventh metal pattern may include the folded portion folded in the short-side direction of the terminal case in a plan view.

[0011] The above summary of the invention does not list all of the necessary features of the present invention, and subcombinations of these features may also constitute inventions. [Effects of the Invention]

[0012] According to the disclosed technology, the turn-on loss of the switching element can be reduced. The above and other objects, features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings illustrating preferred embodiments of the present invention. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a plan view illustrating an example of a semiconductor module according to a first embodiment. [Figure 2] FIG. 10 is a circuit diagram illustrating turn-on loss when the gate wiring length is short. [Figure 3] FIG. 10 is a circuit diagram illustrating turn-on loss when the gate wiring length is long. [Figure 4] 10A and 10B are diagrams showing changes over time in current and voltage at each part of the semiconductor module of the first comparative example when the gate wiring length is short. [Figure 5] 10A and 10B are diagrams showing changes over time in current and voltage at each part of the semiconductor module of the first comparative example when the gate wiring length is long. [Figure 6] 4 is a circuit diagram showing an example of leading out a second auxiliary terminal in the semiconductor module of the first embodiment. FIG. [Figure 7] FIG. 10 is a diagram showing the changes over time in current and voltage at each part of the semiconductor module when the second auxiliary terminal is pulled out from a position closer to the first short side than a position halfway along the length of the second insulating circuit board in the longitudinal direction of the terminal case. [Figure 8] FIG. 10 is a diagram showing the time changes in current and voltage of each part of the semiconductor module when the second auxiliary terminal is pulled out from a position farther from the first short side than a position halfway along the length of the second insulating circuit board in the longitudinal direction of the terminal case. [Figure 9] FIG. 10 is a plan view illustrating an example of a semiconductor module according to a second embodiment. [Figure 10] FIG. 10 is a circuit diagram of a semiconductor module according to a second embodiment. [Figure 11] FIG. 10 is a plan view of a first modified example of the semiconductor module according to the second embodiment. [Figure 12] FIG. 10 is a plan view of a second modified example of the semiconductor module according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments of the invention will be described with reference to the drawings. In the following description, the terms "front surface" and "top surface" refer to the XY plane facing upward (+Z direction) in the semiconductor module 10 of FIG. 1 and the like. Similarly, "up" refers to the upward (+Z direction) direction in the semiconductor module 10 of FIG. 1 and the like. The terms "back surface" and "bottom surface" refer to the XY plane facing downward (-Z direction) in the semiconductor module 10 of FIG. 1 and the like. Similarly, "bottom" refers to the downward (-Z direction) direction in the semiconductor module 10 of FIG. 1 and the like. Similar directions are used in other drawings as necessary. The terms "front surface," "top surface," "top," "back surface," "bottom surface," "bottom," and "side surface" are merely convenient expressions for specifying relative positional relationships and do not limit the technical concept of the present invention. For example, "up" and "bottom" do not necessarily refer to the vertical direction relative to the ground. In other words, the "up" and "down" directions are not limited to the direction of gravity.

[0015] [First embodiment] FIG. 1 is a plan view illustrating an example of a semiconductor module according to a first embodiment. The semiconductor module 10 includes a terminal case 11, a metal base 12, a first insulating circuit board 13a, and a second insulating circuit board 13b.

[0016] Terminal case 11 includes a first short side 11a, a second short side 11b opposite first short side 11a, a first long side 11c, and a second long side 11d opposite first long side 11c. A first input terminal 11a1 and a second input terminal 11a2 are arranged on first short side 11a. First input terminal 11a1 and second input terminal 11a2 are external connection terminals for main currents to which different potentials are applied. In the following description, it is assumed that a positive terminal of a DC power supply is connected to first input terminal 11a1, and a negative terminal of the DC power supply is connected to second input terminal 11a2.

[0017] Output terminals 11b1 and 11b2 are arranged on the second short side 11b. A first control terminal 11c1 and a first auxiliary terminal 11c2 are arranged on the first long side 11c, and a second control terminal 11d1 and a second auxiliary terminal 11d2 are arranged on the second long side 11d. The first auxiliary terminal 11c2 and the second auxiliary terminal 11d2 are sometimes called sense emitter terminals, auxiliary emitter terminals, sense source terminals, auxiliary source terminals, etc. In the example of FIG. 1, the first long side 11c is further provided with a third auxiliary terminal 11c3 and temperature detection terminals 11c4 and 11c5, but these are not necessary. The third auxiliary terminal 11c3 is sometimes called a sense collector terminal or a sense drain terminal, etc.

[0018] The various terminals are made of a highly conductive material, such as aluminum, iron, silver, copper, or an alloy containing at least one of these. The various terminals of terminal case 11 are molded integrally with the frame-shaped housing.

[0019] The terminal case 11 is disposed on a metal base 12. The metal base 12 is used for heat dissipation of the semiconductor module 10 and is mainly composed of a metal with excellent thermal conductivity. Examples of such metals include copper, aluminum, and alloys containing at least one of these. The metal base 12 may be plated to improve its corrosion resistance. Examples of plating materials used in this case include nickel, nickel-phosphorus alloys, and nickel-boron alloys.

[0020] First insulating circuit board 13a is disposed on the second short side 11b side within the area enclosed by terminal case 11 on metal base 12. Second insulating circuit board 13b is disposed on the first short side 11a side within the area enclosed by terminal case 11 on metal base 12. First insulating circuit board 13a and second insulating circuit board 13b are made of ceramics with excellent thermal conductivity. Such ceramics include high-temperature conductive aluminum oxide, aluminum nitride, and silicon nitride. First insulating circuit board 13a and second insulating circuit board 13b are fixed to metal base 12 by, for example, soldering.

[0021] The front surface of first insulating circuit board 13a is provided with a plurality of first switching elements 14a1-14a3, a first metal pattern 15a1, a second metal pattern 15a2, and a third metal pattern 15a3. The front surface of second insulating circuit board 13b is provided with a plurality of second switching elements 14b1-14b3, a fourth metal pattern 15b1, a fifth metal pattern 15b2, a sixth metal pattern 15b3, and a seventh metal pattern 15b4.

[0022] The first switching elements 14a1-14a3 and the second switching elements 14b1-14b3 are, for example, power metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs). The first switching elements 14a1-14a3 function as upper arm switching elements, and the second switching elements 14b1-14b3 function as lower arm switching elements.

[0023] 1, first switching elements 14a1-14a3 are arranged in groups of three on the front surface of first insulating circuit board 13a in the longitudinal direction (X direction) of terminal case 11. Second switching elements 14b1-14b3 are arranged in groups of three on the front surface of second insulating circuit board 13b in the X direction.

[0024] The number of upper arm switching elements and lower arm switching elements is not limited to three.

[0025] Each of the first switching elements 14a1 to 14a3 has a first input electrode, a first output electrode, and a first control electrode, and each of the second switching elements 14b1 to 14b3 has a second input electrode, a second output electrode, and a second control electrode.

[0026] When each of these switching elements is an n-channel power MOSFET, the first input electrode and the second input electrode are drain electrodes provided on the back surface of each switching element, the first output electrode and the second output electrode are source electrodes provided on the front surface of each switching element, and the first control electrode and the second control electrode are gate electrodes provided on the front surface of each switching element.

[0027] When these switching elements are IGBTs, the first input electrode and the second input electrode are collector electrodes provided on the back surface of each switching element, the first output electrode and the second output electrode are emitter electrodes provided on the front surface of each switching element, and the first control electrode and the second control electrode are gate electrodes provided on the front surface of each switching element.

[0028] These switching elements may be power MOSFETs made of silicon carbide.

[0029] In the following description, the first switching elements 14a1-14a3 and the second switching elements 14b1-14b3 are IGBTs, and therefore the first and second input electrodes are referred to as collector electrodes, the first and second output electrodes as emitter electrodes, and the first and second control electrodes as gate electrodes.

[0030] First metal pattern 15a1 is electrically connected to first input terminal 11a1 and the collector electrodes of first switching elements 14a1-14a3. The collector electrodes on the back surfaces of first switching elements 14a1-14a3 are joined to first metal pattern 15a1 by, for example, solder. In the example of FIG. 1, first metal pattern 15a1 is also electrically connected to third auxiliary terminal 11c3.

[0031] The second metal pattern 15a2 extends in the longitudinal direction (X direction) of the terminal case 11, and is electrically connected to the output terminals 11b1 and 11b2, the emitter electrodes of the first switching elements 14a1 to 14a3, and the first auxiliary terminal 11c2.

[0032] The third metal pattern 15a3 is electrically connected to the gate electrodes of the first switching elements 14a1 to 14a3 and the first control terminal 11c1.

[0033] The fourth metal pattern 15b1 is electrically connected to the first input terminal 11a1 and the first metal pattern 15a1.

[0034] The fifth metal pattern 15b2 extends in the longitudinal direction (X direction) of the terminal case 11, and is electrically connected to the second input terminal 11a2, the emitter electrodes of the second switching elements 14b1 to 14b3, and the second auxiliary terminal 11d2.

[0035] Sixth metal pattern 15b3 is electrically connected to the collector electrodes of second switching elements 14b1-14b3 and second metal pattern 15a2. The collector electrodes on the back surfaces of second switching elements 14b1-14b3 are joined to sixth metal pattern 15b3 by, for example, soldering.

[0036] The seventh metal pattern 15b4 is electrically connected to the gate electrodes of the second switching elements 14b1 to 14b3 and the second control terminal 11d1.

[0037] Electrical connection between the emitter electrodes of the switching elements, the metal patterns, or the terminals can be made using wiring members (e.g., first wiring member 16a, second wiring member 16b, etc.) as shown by thick black lines in Fig. 1. Bonding wires, lead frames, etc. can be used as the wiring members.

[0038] For example, the fifth metal pattern 15b2 is provided with three connection regions 21a to 21c in the X direction, to which the three emitter electrodes of the second switching elements 14b1 to 14b3 are electrically connected via wiring members (such as the second wiring member 16b).

[0039] Each of the metal patterns is made of a metal with excellent conductivity, such as copper or a copper alloy. For example, a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Brazed) substrate can be used as the first insulating circuit board 13a and the second insulating circuit board 13b on which these metal patterns are provided.

[0040] 1, diodes 14c1, 14c2, and 14c3 are further provided on first insulation circuit board 13a. Diodes 14d1, 14d2, and 14d3 are further provided on second insulation circuit board 13b. These diodes are, for example, SBD (Schottky Barrier Diodes) or PiN (P-intrinsic-N) diodes, and are provided in anti-parallel to each switching element as FWD (Free Wheeling Diodes). These diodes each have an output electrode (cathode electrode) as a main electrode on the back surface and an input electrode (anode electrode) as a main electrode on the front surface.

[0041] The output electrodes on the back surfaces of diodes 14c1-14c3 are joined by solder to the front surface of first metal pattern 15a1. The output electrodes on the back surfaces of diodes 14d1-14d3 are joined by solder to the front surface of sixth metal pattern 15b3. The input electrodes on the front surfaces of diodes 14c1-14c3 are electrically connected to the emitter electrodes on the front surfaces of first switching elements 14a1-14a3 and second metal pattern 15a2 by wiring members such as bonding wires. The input electrodes on the front surfaces of diodes 14d1-14d3 are electrically connected to the emitter electrodes on the front surfaces of any of second switching elements 14b1-14b3 and fifth metal pattern 15b2 by wiring members such as bonding wires.

[0042] 1, an eighth metal pattern 15a4 is further provided on first insulating circuit board 13a. Eighth metal pattern 15a4 is electrically connected to second metal pattern 15a2 by a wiring member. 1st auxiliary terminal 11c2 are electrically connected to the wiring member.

[0043] In the example of FIG. 1, a thermistor 17 electrically connected to the temperature detection terminals 11c4 and 11c5 is provided on the second insulating circuit board 13b.

[0044] Although not shown, the semiconductor module 10 is further provided with a sealing member that fills the storage area surrounded by the terminal case 11, and a lid that seals the inside of the terminal case 11.

[0045] In the semiconductor module 10 as described above, the first wiring member 16a that electrically connects the second auxiliary terminal 11d2 and the fifth metal pattern 15b2 has the following connection configuration.

[0046] One end of first wiring member 16a is connected to a position (position 20d in the example of FIG. 1) on fifth metal pattern 15b2 that is farther from first short side 11a than a position that is half (w / 2) the length w of second insulating circuit board 13b in the longitudinal direction (X direction) of terminal case 11. The other end of first wiring member 16a is connected to second auxiliary terminal 11d2.

[0047] The reasons and effects of connecting the first wiring member 16a in this manner will be described below. FIG. 2 is a circuit diagram illustrating turn-on loss when the gate wiring length is short. FIG. 3 is a circuit diagram illustrating turn-on loss when the gate wiring length is long. In FIGS. 2 and 3, elements corresponding to those in the semiconductor module 10 in FIG. 1 are denoted by the same reference numerals. In FIGS. 2 and 3, an equivalent circuit of a semiconductor module is shown in FIG. 1, in which one end of the first wiring member 16a is connected to a position 20a on the fifth metal pattern 15b2 that is closer to the first short side 11a than a position halfway along the length w of the second insulating circuit board 13b in the X direction. To distinguish it from the semiconductor module 10 in FIG. 1, the semiconductor module 10a is referred to as a semiconductor module 10a in FIGS. 2 and 3. Hereinafter, this semiconductor module 10a may also be referred to as a semiconductor module of a first comparative example.

[0048] 2 and 3, the three first switching elements 14a1 to 14a3 and the three second switching elements 14b1 to 14b3 in Fig. 1 are shown as first switching elements 14a and second switching elements 14b. Also, in Fig. 2 and 3, the three diodes 14c1 to 14c3 and the three diodes 14d1 to 14d3 in Fig. 1 are shown as diodes 14c and 14d.

[0049] A DC power supply 31 and a capacitor 32 are connected between the first input terminal 11a1 and the second input terminal 11a2, and a load 33 is connected between the first input terminal 11a1 and the output terminals 11b1 and 11b2.

[0050] The second control terminal 11d1 and the second auxiliary terminal 11d2 are connected to a gate drive circuit 34. Another gate drive circuit is also connected to the first control terminal 11c1 and the first auxiliary terminal 11c2, but is not shown in the figure.

[0051] If the length of the gate wiring connecting the gate electrode of the second switching element 14b and the gate drive circuit 34 is short, the turn-on loss may become large.

[0052] FIG. 4 is a diagram showing the time changes in current and voltage at each part of the semiconductor module of the first comparative example when the gate wiring length is short. FIG. 5 is a diagram showing the time changes in current and voltage at each part of the semiconductor module of the first comparative example when the gate wiring length is long. In FIGS. 4 and 5, the horizontal axis represents time, and the vertical axis represents voltage or the magnitude of the current. Note that FIG. 4 shows an example of the time changes in current and voltage when the gate wiring length is shortened by bringing the gate drive circuit 34 closer to the semiconductor module 10a. FIG. 5 shows an example of the time changes in current and voltage when the gate wiring length between the gate drive circuit 34 and the second control terminal 11d1 of the semiconductor module 10a is 30 cm.

[0053] 4 and 5 show the voltage V between the gate electrode and the emitter electrode of the second switching element 14b. GE (10V / div), the voltage between the collector and emitter electrodes, V CE The graph shows an example of the change over time of the gate current I of the second switching element 14b (200V / div). g (2A / div) and collector current I C ( 250A An example of time variation of the frequency (Hz) is shown.

[0054] When the gate wiring length is short, the gate inductor component (Lg in FIG. 3) is smaller than when the gate wiring length is long. As a result, the gate current I gThe rate of increase of is faster when the gate wiring length is long. At this time, resonance occurs due to the parasitic capacitor of the second switching element 14b and the parasitic inductor component Le between the second auxiliary terminal 11d2 and the emitter electrode of the second switching element 14b. The resonant current generated by this resonance becomes large when the gate inductor component is small. When this resonant current flows from the emitter electrode to the gate electrode, the voltage V CE It is estimated that this hinders the reduction in turn-on loss and increases the turn-on loss.

[0055] On the other hand, when the gate wiring length is long, the gate inductance component (Lg in FIG. 3) is larger than when the gate wiring length is short. As a result, the gate current I g The rate of increase of the voltage V during the period from time t1 to time t2 is slower than when the gate wiring length is short. At this time, the above-mentioned resonance is less likely to occur, and the generation of the resonance current is also prevented by the gate inductor component Lg. CE It is estimated that the rate of decrease in the voltage becomes faster and the turn-on loss is small.

[0056] As described above, the occurrence of resonance is considered to be a cause of increased turn-on loss. Increasing the gate wiring length, as described above, is considered to suppress the occurrence of resonance. On the other hand, the occurrence of resonance can also be suppressed by reducing the parasitic inductance component Le between the second auxiliary terminal 11d2 and the emitter electrode of the second switching element 14b.

[0057] The semiconductor module 10 of the first embodiment reduces the parasitic inductance component Le, thereby suppressing the occurrence of resonance and reducing turn-on loss.

[0058] FIG. 6 shows the first embodiment. Form 6 is a circuit diagram showing an example of leading out a second auxiliary terminal in a semiconductor module.In Fig. 6, the same elements as those shown in Figs.

[0059] 1, one end of first wiring member 16a connected to second auxiliary terminal 11d2 is connected to position 20d on fifth metal pattern 15b2, which is farther from first short side 11a than a position halfway along length w of second insulating circuit board 13b in the X direction. Therefore, as shown in FIG. 6, second auxiliary terminal 11d2 is drawn from a position farther from second input terminal 11a2 than semiconductor module 10a shown in FIGS. 2 and 3. In other words, second auxiliary terminal 11d2 is drawn from a position closer to the emitter electrode of second switching element 14b.

[0060] As a result, the parasitic inductor component Le between the second auxiliary terminal 11d2 and the emitter electrode of the second switching element 14b is smaller than in the semiconductor module 10a shown in Figures 2 and 3. As a result, the occurrence of resonance is suppressed, and turn-on loss is reduced.

[0061] Next, an example of the change over time in current and voltage at each part when the position where the second auxiliary terminal 11d2 is drawn out in the semiconductor module 10 shown in FIG. 1 is changed will be shown. 7A and 7B are diagrams showing the changes over time in the current and voltage of each part of the semiconductor module when the second auxiliary terminal is pulled out from a position closer to the first short side than a position halfway along the length of the second insulating circuit board in the longitudinal direction of the terminal case. (A) shows the case when pulled out from position 20a, and (B) shows the case when pulled out from position 20b. 8A and 8B are diagrams showing the changes over time in current and voltage at each part of the semiconductor module when the second auxiliary terminal is pulled out from a position that is farther from the first short side than a position halfway along the length of the second insulating circuit board in the longitudinal direction of the terminal case. (A) shows the case when pulled out from position 20c, and (B) shows the case when pulled out from position 20d. 7 and 8, the horizontal axis represents time, and the vertical axis represents the magnitude of voltage or current. GE (10V / div), the voltage between the collector and emitter electrodes, V CE An example of the change over time of the gate current I of the second switching elements 14b1 to 14b3 is shown.g (2A / div) and collector current I C ( 250A An example of time variation of the frequency (Hz) is shown.

[0062] Of the positions 20a to 20d, the position 20a is closest to the first short side portion 11a. Therefore, when the gate wiring length is short, the voltage V CE In the example of Figure 7(A), the turn-on loss increases. Turn On The loss was 53.6 mJ.

[0063] Position 20b is farther from first short side 11a in the −X direction than position 20a, but is closer to first short side 11a than the position of half the length w of second insulating circuit board 13b. Therefore, when the gate wiring length is short, the voltage V CE In the example of Figure 7(B), the reduction in turn-on loss is limited. Turn On The loss was 34.8 mJ.

[0064] The position 20c is closer to the first short side 11a than the position half the length w of the second insulating circuit board 13b in the X direction. away from Position 20c is located near connection regions 21b and 21c, which are farther from first short side 11a than connection region 21a among connection regions 21a to 21c. In this case, the parasitic inductor component Le between second auxiliary terminal 11d2 and the emitter electrodes of second switching elements 14b1 to 14b3 is reduced, thereby suppressing resonance and reducing turn-on loss. In the example of FIG. 8(A), the turn-on loss is 23.2 mJ, which is less than half of the turn-on loss when second auxiliary terminal 11d2 is drawn out from position 20a.

[0065] The position 20d is closer to the first short side 11a than the position half the length w of the second insulating circuit board 13b in the X direction. away fromPosition 20d is located near connection region 21c, which is the farthest from first short side 11a among connection regions 21a to 21c. In this case, too, the parasitic inductor component Le between second auxiliary terminal 11d2 and the emitter electrodes of second switching elements 14b1 to 14b3 is reduced, thereby suppressing resonance and reducing turn-on loss. In the example of FIG. 8(B), the turn-on loss was 23.4 mJ, and when second auxiliary terminal 11d2 was drawn out from position 20c, the turn-on loss was reduced to the same extent.

[0066] As described above, in the semiconductor module 10 of the first embodiment, the second switching element 14b 1 The second auxiliary terminal 11d2 is drawn out from a position closer to the emitter electrode of the first auxiliary terminal 11. This reduces the parasitic inductance component Le, thereby suppressing the occurrence of resonance and reducing turn-on loss.

[0067] [Second embodiment] As mentioned above, the occurrence of resonance is considered to be a cause of increased turn-on loss. Increasing the gate wiring length, as described above, is considered to suppress the occurrence of resonance. On the other hand, the occurrence of resonance can also be suppressed by reducing the parasitic inductance component Le between the second auxiliary terminal 11d2 and the emitter electrodes of the second switching elements 14b1-14b3. Semiconductor module according to the second embodiment Lu is By increasing the gate wiring length, the occurrence of resonance is suppressed and turn-on loss is reduced.

[0068] Fig. 9 is a plan view showing an example of a semiconductor module according to the second embodiment, in which elements similar to those in the semiconductor module 10 according to the first embodiment shown in Fig. 1 are denoted by the same reference numerals.

[0069] In the semiconductor module 40a of the second embodiment, a seventh metal pattern 41a electrically connected to the second control electrodes (gate electrodes of the second switching elements 14b1 to 14b3) and the second control terminal 11d1 is different from the seventh metal pattern 15b4 in FIG.

[0070] In the example of FIG. 9, the seventh metal pattern 41a includes two folded portions 41a1 and 41a2 folded in the longitudinal direction (X direction) of the terminal case 11 in a plan view. The gate electrodes of the second switching elements 14b2 and 14b3 are electrically connected to one end of the seventh metal pattern 41a via a third wiring member 42a such as a bonding wire. Also, in the example of FIG. 9, the gate electrode of the second switching element 14b1 is electrically connected to the folded portion 41a1 via a fourth wiring member 42b such as a bonding wire. Furthermore, the second control terminal 11d1 is electrically connected to the other end of the seventh metal pattern 41a via a fifth wiring member 42c such as a bonding wire.

[0071] Unlike the semiconductor module 10 of the first embodiment, the second auxiliary terminal 11d2 is drawn out from a position 20a of the fifth metal pattern 15b2. That is, one end of the first wiring member 16a is connected to a position 20a on the fifth metal pattern 15b2 that is closer to the first short side 11a than a position that is half the length w (w / 2) of the second insulating circuit board 13b in the X direction of the terminal case 11, as shown in FIG. 1. The other end of the first wiring member 16a is connected to the second auxiliary terminal 11d2.

[0072] By having the seventh metal pattern 41a as described above, the semiconductor module 40a can increase the length between the position where the gate electrodes of the second switching elements 14b1 to 14b3 are electrically connected and the position where the second control terminal 11d1 is electrically connected.

[0073] It should be noted that the positions in seventh metal pattern 41a to which the gate electrodes of second switching elements 14b1 to 14b3 are electrically connected are not limited to the positions shown in FIG.

[0074] Fig. 10 is a circuit diagram of a semiconductor module according to a second embodiment. In Fig. 10, elements similar to those in Fig. 3 and the like are denoted by the same reference numerals. In Fig. 3, the gate wiring length between the second control terminal 11d1 and the gate drive circuit 34 is increased, but in Fig. 10, the gate wiring length is increased within a semiconductor module 40a by using a seventh metal pattern 41a as shown in Fig. 9.

[0075] According to such a semiconductor module 40a, the gate inductor component (Lg in FIG. 10) can be increased, and as shown in FIG. 5, the gate current I g The rate of increase of the voltage V during the period from time t1 to time t2 is slower than when the gate wiring length is short. At this time, the above-mentioned resonance is less likely to occur, and the generation of the resonance current is also prevented by the gate inductor component Lg. CE This increases the rate at which the capacitance decreases, reducing turn-on loss.

[0076] (First Modification) Seventh metal pattern 41a is not limited to the shape shown in Fig. 9. The seventh metal pattern only needs to include at least one folded portion in plan view. Fig. 11 is a plan view of a first modified example of the semiconductor module of the second embodiment, in which the same elements as those in Fig. 10 are denoted by the same reference numerals.

[0077] 11, the seventh metal pattern 41b includes one folded portion 41b1 that is folded back in the longitudinal direction (X direction) of the terminal case 11 in a plan view. One end of the seventh metal pattern 41b is electrically connected to the gate electrodes of the second switching elements 14b2 and 14b3 via a third wiring member 42a such as a bonding wire.

[0078] 11, the gate electrode of the second switching element 14b1 is electrically connected to the folded portion 41b1 via a fourth wiring member 42b such as a bonding wire. Furthermore, the other end of the seventh metal pattern 41b is electrically connected to the second control terminal 11d1 via a fifth wiring member 42c such as a bonding wire.

[0079] Even when the seventh metal pattern 41b having such a configuration is used, the gate wiring length can be increased, and the same effect as that of the semiconductor module 40a can be obtained. In cases where the gate wiring length does not need to be as long as that of the semiconductor module 40a, such a semiconductor module 40b can be applied.

[0080] (Second Modification) Fig. 12 is a plan view of a second modified example of the semiconductor module of the second embodiment, in which the same elements as those in Figs. 10 and 11 are denoted by the same reference numerals.

[0081] 12 includes a seventh metal pattern 41c as follows. The seventh metal pattern 41c includes one folded portion 41c1 that is folded back in the longitudinal direction (X direction) of the terminal case 11 in a plan view, and multiple folded portions (e.g., folded portion 41c2) that are folded back in the lateral direction (Y direction) of the terminal case 11. One end of the seventh metal pattern 41c is electrically connected to the gate electrodes of the second switching elements 14b2 and 14b3 via a third wiring member 42a such as a bonding wire.

[0082] 12, the gate electrode of the second switching element 14b1 is electrically connected to the folded portion 41c1 via a fourth wiring member 42b such as a bonding wire. Furthermore, the second control terminal 11d1 is electrically connected to the other end of the seventh metal pattern 41c via a fifth wiring member 42c such as a bonding wire.

[0083] Even when such a seventh metal pattern 41c including the folded portion 41c2 folded in the short direction of the terminal case 11 is used, the gate wiring length can be increased, and the same effect as that of the semiconductor module 40a can be obtained.

[0084] (Third Modification) In the above, the seventh metal patterns 41a, 41b, and 41c are provided with folded portions, so that the gate wiring length is increased. c However, in order to increase the gate wiring length, a folded portion may be provided in the fifth wiring member 42c. For example, a bonding wire or a lead frame including one or more folded portions may be used as the fifth wiring member 42c. The fifth wiring member 42c is an example of the second wiring member of the invention according to claim 4.

[0085] While one aspect of the semiconductor module of the present invention has been described above based on the embodiment, this is merely an example and the present invention is not limited to the above description. The foregoing merely illustrates the principles of the present invention. Further, since numerous modifications and changes will be apparent to those skilled in the art, the present invention is not limited to the exact construction and application shown and described above, and all corresponding modifications and equivalents are deemed to be within the scope of the present invention as defined by the appended claims and their equivalents. [Explanation of symbols]

[0086] 10, 10a, 40a, 40b, 40c Semiconductor module 11 Terminal case 11a First short side 11a1 First input terminal 11a2 Second input terminal 11b Second short side 11b1, 11b2 output terminals 11c First long side 11c1 First control terminal 11c2 1st auxiliary terminal 11c3 3rd auxiliary terminal 11c4, 11c5 Temperature detection terminals 11d Second long side 11d1 Second control terminal 11d2 2nd auxiliary terminal 12 Metal Base 13a First insulated circuit board 13b Second insulated circuit board 14a, 14a1 to 14a3 First switching elements 14b, 14b1 to 14b3 Second switching elements 14c, 14c1 to 14c3, 14d, 14d1 to 14d3 diodes 15a1 First metal pattern 15a2 Second metal pattern 15a3 3rd metal pattern 15b1 4th metal pattern 15b2 5th metal pattern 15b3 6th metal pattern 15b4, 41a, 41b, 41c 7th metal pattern 15a4 8th metal pattern 16a First wiring member 16b Second wiring member 17 Thermistor 20a~20d position 21a~21c Connection area 31 DC power supply 32 Capacitor 33 Load 34 Gate drive circuit 41a1, 41a2, 41b1, 41c1, 41c2 Folded parts 42a Third wiring member 42b Fourth wiring member 42c Fifth wiring member

Claims

1. a terminal case in which a first input terminal and a second input terminal are arranged on a first short side, an output terminal is arranged on a second short side opposite to the first short side, a first control terminal and a first auxiliary terminal are arranged on a first long side, and a second control terminal and a second auxiliary terminal are arranged on a second long side opposite to the first long side; a first insulating circuit board provided on its front surface with a plurality of first switching elements each having a first input electrode, a first output electrode, and a first control electrode, a first metal pattern electrically connected to the first input terminal and the first input electrode, a second metal pattern electrically connected to the output terminal, the first output electrode, and the first auxiliary terminal, and a third metal pattern electrically connected to the first control electrode and the first control terminal, and arranged on the side of the second short side within an area surrounded by the terminal case; a second insulating circuit board provided on its front surface with: a plurality of second switching elements each having a second input electrode, a second output electrode, and a second control electrode; a fourth metal pattern electrically connected to the first input terminal and the first metal pattern; a fifth metal pattern electrically connected to the second input terminal, the second output electrode, and the second auxiliary terminal and extending in the longitudinal direction of the terminal case; a sixth metal pattern electrically connected to the second input electrode and the second metal pattern; and a seventh metal pattern electrically connected to the second control electrode and the second control terminal; and the second insulating circuit board arranged on the side of the first short side within an area surrounded by the terminal case; a first wiring member having one end connected to a position on the fifth metal pattern that is farther from the first short side than a position halfway along the length of the second insulating circuit board in the longitudinal direction, and having the other end connected to the second auxiliary terminal; A semiconductor module having:

2. the plurality of second switching elements are arranged in a three-element array in the longitudinal direction on the front surface of the second insulating circuit board, the fifth metal pattern is provided with three connection regions in the longitudinal direction, to which the three second input electrodes are electrically connected via second wiring members, respectively; the position of the first wiring member is near one of two of the three connection regions that is farther from the first short side portion than another connection region; The semiconductor module according to claim 1 .

3. the plurality of second switching elements are arranged in a three-element array in the longitudinal direction on the front surface of the second insulating circuit board, the fifth metal pattern is provided with three connection regions in the longitudinal direction, to which the three second input electrodes are electrically connected via second wiring members, respectively; the position of the first wiring member is near the connection region farthest from the first short side portion among the three connection regions; The semiconductor module according to claim 1 .

4. a terminal case in which a first input terminal and a second input terminal are arranged on a first short side, an output terminal is arranged on a second short side opposite to the first short side, a first control terminal and a first auxiliary terminal are arranged on a first long side, and a second control terminal and a second auxiliary terminal are arranged on a second long side opposite to the first long side; a first insulating circuit board provided on its front surface with a plurality of first switching elements each having a first input electrode, a first output electrode, and a first control electrode, a first metal pattern electrically connected to the first input terminal and the first input electrode, a second metal pattern electrically connected to the output terminal, the first output electrode, and the first auxiliary terminal, and a third metal pattern electrically connected to the first control electrode and the first control terminal, and arranged on the side of the second short side within an area surrounded by the terminal case; a second insulating circuit board provided on its front surface with: a plurality of second switching elements each having a second input electrode, a second output electrode, and a second control electrode; a fourth metal pattern electrically connected to the first input terminal and the first metal pattern; a fifth metal pattern electrically connected to the second input terminal, the second output electrode, and the second auxiliary terminal and extending in the longitudinal direction of the terminal case; a sixth metal pattern electrically connected to the second input electrode and the second metal pattern; and a seventh metal pattern electrically connected to the second control electrode and the second control terminal; and the second insulating circuit board arranged on the side of the first short side within an area surrounded by the terminal case; a first wiring member having one end connected to a position on the fifth metal pattern that is closer to the first short side portion than a position halfway along the length of the second insulating circuit board in the longitudinal direction, and having the other end connected to the second auxiliary terminal; and the seventh metal pattern or the second wiring member electrically connecting the seventh metal pattern and the second control terminal includes at least one folded portion in a plan view; Semiconductor module.

5. The semiconductor module according to claim 4 , wherein the seventh metal pattern includes a folded portion that is folded in the longitudinal direction in a plan view.

6. The semiconductor module according to claim 4 , wherein the seventh metal pattern includes a folded portion that is folded in a short-side direction of the terminal case in a plan view.

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