Electrode embedding member and substrate holding member

Abstract

To provide an electrode burying member and a substrate holding member capable of providing sharp temperature gradient to a placed substrate.SOLUTION: An electrode burying member 100 comprises: a base material 10 integrally formed by a ceramic sintered body; and a heater electrode 20 buried in the base material 10. The base material 10 is formed with one or more grooves 30 each having an opening 32 on a top face 12 of the base material 10. A bottom part 34 of each groove 30 reaches a heater electrode layer 24 in which at least the heater electrode 20 is buried in a vertical cross section of the base material 10. The heater electrode 20 is divided into a plurality of regions by means of the grooves 30.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an electrode-embedding member and a substrate-holding member. [Background technology]

[0002] Heater plates (electrode-embedded members) with embedded electrodes (heat generating resistors) have been used as components for semiconductor manufacturing equipment, and are capable of heating a substrate placed on the heater plate.

[0003] When attempting to create a temperature gradient in a specific region of a substrate placed on the heater's substrate mounting surface, a multi-zone heater is used, with the heater electrodes divided into multiple regions, and a specified amount of power is applied to the heater electrodes in each region. However, if the ceramic substrate has high thermal conductivity, the heat also diffuses horizontally, making it impossible to create a sharp temperature gradient in a specific region of the substrate. Furthermore, if the ceramic substrate has low thermal conductivity, it is difficult to efficiently raise the temperature of the substrate.

[0004] Patent Document 1 aims to provide a ceramic heater that achieves precise uniform temperature control of wafers and the like in a variety of environments in semiconductor processes. It discloses a ceramic heater characterized by comprising a plurality of heating resistors embedded inside a ceramic substrate, a mounting surface formed on the surface of the ceramic substrate on which an object to be heated is placed, and at least one partition groove provided on the opposite side of the mounting surface so as to penetrate the approximately flat surface on which the plurality of heating resistors are embedded, and which partitions the active area of ​​the heating resistors.

[0005] Patent Document 2 aims to provide a substrate heating device that prevents damage caused by setting different temperatures depending on the location, and discloses a ceramic heater that includes a ceramic substrate group including multiple ceramic substrates that are arranged in a roughly plate-like shape with gaps between them and form a substrate mounting surface, a resistance heating element embedded in the ceramic substrates, and a plate-shaped auxiliary member that is arranged in contact with the surface of the substrate group opposite the substrate mounting surface. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-251707 [Patent Document 2] Japanese Patent Application Laid-Open No. 2006-49844 Summary of the Invention [Problem to be solved by the invention]

[0007] In Patent Document 1, the heating resistors are separated by grooves, and although the horizontal diffusion of heat generated from the heater electrodes is suppressed, the heat diffuses horizontally near the substrate mounting surface, making it difficult to achieve a sufficient effect. Furthermore, it is difficult to electrically connect the separated heater electrodes and to run electrical wiring from the inside of the shaft located in the center of the underside of the base. Furthermore, in Patent Document 2, the base is divided into multiple pieces, which are then simply fitted into an auxiliary member, resulting in insufficient mechanical reliability as a substrate heating device.

[0008] Therefore, there has been a demand for a heater that can provide a sharp temperature gradient to a substrate placed thereon and that is highly practical and reliable.

[0009] The present invention has been made in view of the above circumstances, and has as its object to provide an electrode-embedding member and a substrate-holding member that can provide a sharp temperature gradient to a substrate placed thereon. [Means for solving the problem]

[0010] (1) In order to achieve the above object, the electrode-embedding member of the present invention is an electrode-embedding member comprising a base material integrally formed of a ceramic sintered body and a heater electrode embedded in the base material, wherein the base material has one or more grooves with openings formed on an upper surface of the base material, the bottoms of the grooves reaching at least to a heater electrode layer in which the heater electrode is embedded in a vertical cross section of the base material, and the heater electrode is partitioned into a plurality of regions by the grooves. The opening includes a plurality of arc shapes arranged at intervals in the circumferential direction when the base is viewed from above. It is characterized by the following.

[0011] In this way, by forming a groove in the substrate that has an opening on the top surface and whose bottom reaches at least the heater electrode layer in a vertical cross section of the substrate, and by dividing the heater electrode into multiple regions by the grooves, it is possible to suppress horizontal heat diffusion and create a sharp temperature gradient on the substrate placed on the electrode-embedding member.In addition, since the substrate is formed as an integral unit, the mechanical strength of the substrate can be increased.

[0012] (2) In the electrode-embedding member of the present invention, the opening has a circular shape, a linear shape, or a shape that is a combination of these when the base is viewed from above.

[0013] By forming the groove in an annular shape, the heater electrodes can be partitioned into the inside and outside of the groove. This allows the temperature gradient of the substrate to be set in the radial direction of the groove circle. Also, by forming the groove in a straight line, the heater electrodes can be partitioned on both sides of the line. This allows the temperature gradient of the substrate to be set in the direction perpendicular to the line.

[0014] (3) As mentioned above In the electrode-embedding member of the present invention, the opening is Arranged with gaps in the circumferential direction It is characterized by including a plurality of arc shapes.

[0015] By forming the groove in an arc shape, the heater electrodes and their electrical wiring can be positioned outside the arc edges, which makes it easier to apply power to multiple electrode regions and further increases the mechanical strength of the substrate.

[0016] (4) In the electrode-embedded member of the present invention, the substrate further has an electrostatic attraction electrode or a high-frequency electrode embedded therein.

[0017] In this way, by further embedding an electrode for electrostatic attraction or a high frequency electrode in the base material, the semiconductor manufacturing process can be made more sophisticated, such as by providing an electrostatic attraction function for the substrate or a bias by high frequency power.

[0018] (5) In the electrode-embedded member of the present invention, the base material further has an electrostatic attraction electrode or a high-frequency electrode embedded therein, the opening is a combination of one or more arc shapes, the upper surface is partitioned into areas inside the arcs, outside the arcs, and gaps between adjacent ends of the arcs, and the electrostatic attraction electrode or the high-frequency electrode is embedded in the areas inside the arcs, outside the arcs, and gaps between adjacent ends of the arcs.

[0019] In this way, by dividing the electrostatic attraction electrode or high-frequency electrode into areas inside the arc, outside the arc, and in the gap between adjacent ends of the arc, it becomes easier to apply power from inside the arc-shaped groove to the electrode on the outside, thereby increasing the reliability of the electrical connection of the electrode.

[0020] (6) In the electrode-burying member of the present invention, the groove is characterized in that the opening and the bottom are horizontally offset in the cross section.

[0021] Thus, by forming the groove such that the opening and the bottom are horizontally displaced in the cross-section, a higher amount of heat can be supplied to one region of the upper surface of the substrate partitioned by the groove. As a result, the temperature gradient in the corresponding region of the substrate can be made sharper.

[0022] (7) Further, in the electrode embedding member of the present invention, the upper end surface of the heater electrode layer is characterized in that the distance from the upper surface is 1 mm or more and 8 mm or less.

[0023] By arranging the heater electrode layer within such a range, it is possible to appropriately suppress the horizontal heat diffusion while maintaining the strength of the upper surface of the substrate. Further, other electrodes can be embedded above the heater electrode layer.

[0024] (8) Further, in the electrode embedding member of the present invention, when the parallel distance between the upper surface of the substrate and the lower surface facing the upper surface is D, and the distance between the bottom of the groove and the lower surface of the substrate is T, it is characterized in that 0 < T / D ≤ 0.3.

[0025] Thus, by setting T within the above range with respect to D, the horizontal heat diffusion can be sufficiently suppressed.

[0026] (9) Further, in the electrode embedding member of the present invention, the heater electrode is characterized in that it is divided into a plurality of regions to which different powers can be applied.

[0027] Thereby, a sharper temperature gradient can be provided in the substrate placed on the electrode embedding member.

[0028] (10) Further, the substrate holding member of the present invention is a substrate holding member, comprising the electrode embedding member according to any one of (1) to (9) above, and a support member joined to the lower surface facing the upper surface of the substrate and supporting the electrode embedding member.

[0029] This allows a sharp temperature gradient to be created on the substrate, and a substrate holding member with high mechanical strength can be constructed. [Effects of the Invention]

[0030] According to the electrode-embedding member and substrate-holding member of the present invention, a sharp temperature gradient can be created in the placed substrate. [Brief explanation of the drawings]

[0031] [Figure 1] 1 is a schematic cross-sectional view showing an example of an electrode-embedded member according to a first embodiment of the present invention. [Figure 2] 3 is a schematic view showing an example of the upper surface of an electrode-embedded member according to the first embodiment. FIG. [Figure 3] 3 is a schematic cross-sectional view showing an example of a heater electrode layer of the electrode-embedded member according to the first embodiment. FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view showing a modified example of an electrode-embedded member according to the first embodiment. [Figure 5] FIG. 4 is a schematic cross-sectional view showing a modified example of an electrode-embedded member according to the first embodiment. [Figure 6] FIG. 4 is a schematic cross-sectional view showing a modified example of an electrode-embedded member according to the first embodiment. [Figure 7] FIG. 4 is a schematic cross-sectional view showing a modified example of an electrode-embedded member according to the first embodiment. [Figure 8] 1 is a schematic cross-sectional view showing an example of a substrate holding member according to a first embodiment. [Figure 9] FIG. 6 is a schematic cross-sectional view showing an example of an electrode-embedded member according to a second embodiment of the present invention. [Figure 10] 10 is a schematic view showing an example of the upper surface of an electrode-embedded member according to the second embodiment. FIG. [Figure 11] FIG. 10 is a schematic cross-sectional view showing an example of a heater electrode layer of an electrode-embedded member according to a second embodiment. [Figure 12] 10 is a schematic cross-sectional view showing a modified example of the heater electrode layer of the electrode-embedded member according to the second embodiment. FIG. [Figure 13] FIG. 10 is a schematic cross-sectional view showing a modified example of an electrode-embedded member according to the second embodiment. [Figure 14] 10 is a schematic cross-sectional view showing an example of another electrode layer of the electrode-embedded member according to the second embodiment. FIG. [Figure 15] FIG. 10 is a schematic cross-sectional view showing an example of a substrate holding member according to a second embodiment. [Figure 16] FIG. 10 is a schematic cross-sectional view showing a modified example of the substrate holding member according to the second embodiment. [Figure 17] 1 is a table showing shape characteristics and temperature measurement results of Examples and Comparative Examples. DETAILED DESCRIPTION OF THE INVENTION

[0032] Next, an embodiment of the present invention will be described with reference to the drawings. To facilitate understanding of the description, the same reference numerals are used to designate the same components in the drawings, and duplicated descriptions will be omitted. Note that in the configuration diagrams, the size of each component is shown conceptually and does not necessarily represent the actual dimensional ratio.

[0033] [First embodiment] (Configuration of electrode-embedded member) An electrode-embedded member according to a first embodiment of the present invention will be described with reference to Figs. 1 to 3. Fig. 1 is a schematic cross-sectional view showing an example of an electrode-embedded member according to the first embodiment of the present invention. Fig. 2 is a schematic view showing an example of the upper surface of an electrode-embedded member according to the first embodiment of the present invention. Fig. 1 shows a cross-section taken along line AA in Fig. 2. Fig. 3 is a schematic cross-sectional view showing an example of a heater electrode layer of an electrode-embedded member according to the first embodiment of the present invention. An electrode-embedded member 100 according to this embodiment includes a substrate 10 and a heater electrode 20.

[0034] The substrate 10 is integrally formed from a ceramic sintered body. The substrate 10 may have various shapes, such as a substantially circular plate, a polygonal plate, or an elliptical plate. The substrate 10 being integrally formed from a ceramic sintered body means that the ceramic sintered body forming the bottom 34 of the groove 30 (described later) and the ceramic sintered body forming the side surface of the groove 30 are made of a single ceramic sintered body, or that the ceramic sintered bodies are bonded together with or without a ceramic-containing bonding material. This increases the mechanical strength of the substrate 10. The substrate 10 is flat except for the groove 30 and the convex portions formed on the top surface 12. The substrate 10 may also have a convex or concave shape toward the center of the substrate 10.

[0035] The heater electrode 20 is embedded in the base material 10. The heater electrode 20 is used to heat the substrate (wafer) W.

[0036] The substrate 10 has one or more grooves 30, each having an opening 32, formed in the upper surface 12 of the substrate 10. The width of the opening 32 and the bottom 34 of the groove 30 is preferably 1 mm or more and 10 mm or less, and more preferably 1 mm or more and 5 mm or less. In a vertical cross section of the substrate 10, the bottom 34 of the groove 30 reaches at least as far as the heater electrode layer 24 in which the heater electrode 20 is embedded. The bottom 34 of the groove 30 preferably reaches a position closer to the lower surface 14 of the substrate 10 than the lower end surface 28 of the heater electrode layer 24. The heater electrode 20 is divided into multiple regions by the grooves 30.

[0037] The heater electrode 20 being divided into multiple regions by the grooves 30 means that the grooves 30, which reach the heater electrode layer 24, exist on a line connecting one point on the heater electrode 20 to another. Therefore, if the heater electrode 20 is positioned so as to straddle at least some of the grooves 30 in the electrode-embedding member 100, the heater electrode 20 can be said to be divided into multiple regions by the grooves 30. This suppresses at least the horizontal diffusion of heat in the heater electrode layer 24. Therefore, dividing the heater electrode 20 into multiple regions by the grooves 30 and dividing the heater electrode 20 into multiple regions to which different powers can be applied are different concepts. Therefore, the heater electrode 20 being divided into multiple regions also includes a case where part or all of the heater electrodes 20 in different regions are electrically connected.

[0038] The opening 32 preferably has a circular ring shape, a linear shape, or a combination of these shapes when viewed from the top surface 12 of the substrate 10. By forming the opening 32 of the groove 30 in a circular ring shape, the heater electrode 20 can be partitioned into the inside and outside of the groove 30. This allows the temperature gradient of the substrate W to be set in the radial direction of the circle of the groove 30. Furthermore, by forming the opening 32 of the groove 30 in a linear shape, the heater electrode 20 can be partitioned on both sides of the line. This allows the temperature gradient of the substrate W to be set in the direction perpendicular to the line. While FIG. 1 shows a single circular groove 30 centered at the center 16 of the substrate 10, the circular groove 30 may be formed in the shape of two or more concentric circles. When the groove 30 has a circular ring shape when viewed from the top surface 12 of the substrate 10, an additional circular groove 30 may be provided in the center.

[0039] As shown in Fig. 3, the heater electrode layer 24 of the electrode-embedding member 100 in Fig. 1 is divided by grooves 30 into two regions, an inner-side heater electrode region 21a and an outer-side heater electrode region 22a. The inner-side heater electrode 21 and the outer-side heater electrode 22 are formed in each region. That is, the heater electrode 20 is divided by the grooves 30 into two regions, the inner-side heater electrode 21 and the outer-side heater electrode 22. In Fig. 3, the heater electrode 20 may be embedded throughout the entire inner-side heater electrode 21 and the outer-side heater electrode 22, or a heater electrode 20 having a shape according to the design of the electrode-embedding member 100 may be embedded in each region.

[0040] The heater electrode 20 is preferably divided into multiple regions to which different powers can be applied. This allows a sharper temperature gradient to be created in the substrate W placed on the electrode-embedded member 100. The electrode-embedded member 100 in Fig. 1 not only divides the heater electrode 20 into two regions, the inner heater electrode 21 and the outer heater electrode 22, by the grooves 30, but also connects different terminals 50 to the inner heater electrode 21 and the outer heater electrode 22, allowing different powers to be applied to them.

[0041] 1 shows an example in which the inner heater electrode 21 is directly connected to the terminal 50, and the outer heater electrode 22 is connected to the terminal 51 through a via 62 and a wiring 60 embedded in a layer different from the heater electrode layer 24. However, the shape of the electrical connection between the heater electrode 20 and the terminals 50, 51 is not limited to this. Also, for example, the inner heater electrode 21 and the outer heater electrode 22 may be connected to the same terminal 50.

[0042] The groove 30 preferably has a shape in which the opening 32 and the bottom 34 are horizontally displaced in a vertical cross-section of the base material 10. Thereby, a higher amount of heat can be supplied to one region of the upper surface 12 of the base material 10 partitioned by the groove 30. As a result, the temperature gradient in the corresponding region of the substrate W can be made sharper. That the opening 32 and the bottom 34 have a horizontally displaced shape in a vertical cross-section of the base material 10 means that in a certain vertical cross-section of the base material 10, the cross-sectional shape of the groove 30 including the opening 32 and the bottom 34 is not substantially rectangular. The substantially rectangular shape includes the case where the bottom 34 is a curved surface.

[0043] FIG. 4 and FIG. 5 are schematic cross-sectional views showing modified examples of the electrode embedding member according to the first embodiment of the present invention. In a vertical cross-section of the base material 10, the shape in which the opening portion 32 and the bottom portion 34 of the groove 30 are horizontally displaced includes a stepped shape shown in FIG. 4 and an oblique shape shown in FIG. 5.

[0044] The upper end surface 26 of the heater electrode layer 24 is preferably at a distance of 1 mm or more and 8 mm or less from the upper surface 12. Thereby, while maintaining the strength of the upper surface 12 of the base material 10, the horizontal diffusion of heat can be appropriately suppressed. Also, other electrodes can be embedded in the upper part of the heater electrode layer 24.

[0045] When the parallel distance between the upper surface 12 and the lower surface 14 of the base material 10 is D, and the distance between the bottom 34 of the groove 30 and the lower surface 14 facing the upper surface 12 of the base material 10 is T, it is preferable that 0 < T / D ≤ 0.3. Thereby, the horizontal diffusion of heat of the electrode embedding member 100 can be sufficiently suppressed. When T / D becomes larger than 0.3, the horizontal diffusion of heat becomes non-negligible, and it may be difficult to maintain the substrate temperature in a predetermined region. When the bottom 34 is not a horizontal plane, the distance T between the bottom 34 and the lower surface 14 is measured from the position closest to the lower surface 14.

[0046] Fig. 6 is a schematic cross-sectional view showing a modified example of the electrode-embedded member according to the first embodiment of the present invention. As shown in Fig. 6, the heater electrode layer 24 may be embedded to different depths on both sides of the groove 30. In this case, it is preferable that the bottom 34 of the groove 30 reaches the deeper heater electrode layer 24 in a vertical cross section of the substrate 10.

[0047] FIG. 7 is a schematic cross-sectional view showing a modified example of the electrode-embedded member according to the first embodiment. As shown in FIG. 7, it is preferable that an electrostatic adsorption electrode or a high-frequency electrode (another electrode 70) is further embedded in the base material 10. This can improve the functionality of the semiconductor manufacturing process, such as the electrostatic adsorption function of the substrate W and the application of a bias using high-frequency power. FIG. 7 shows an example in which the other electrode 70 is also divided into an inner electrode 71 and an outer electrode 72. FIG. 7 does not show the terminal 50 and terminal hole 52 connected to the other electrode 70.

[0048] The electrode-embedding member 100 may include pin-shaped protrusions 40. In this case, a plurality of pin-shaped protrusions 40 are formed to protrude upward from the upper surface 12 of the substrate 10. The shape of the pin-shaped protrusions 40 is appropriately selected from pillar shapes such as a cylindrical shape or a rectangular pillar shape, pyramidal shapes such as a conical shape or a pyramidal shape, and shapes with the top of a pyramidal shape cut off such as a truncated cone shape or a truncated pyramidal shape.

[0049] The arrangement of the pin-shaped protrusions 40 is not particularly limited and may be any known form or a form similar thereto, such as a regular arrangement such as a concentric circle arrangement as shown in Fig. 2, a square lattice arrangement, a triangular lattice arrangement, or an irregular arrangement with localized sparse and dense areas.

[0050] When pin-shaped protrusions 40 are formed on the substrate 10, the upper ends of the multiple pin-shaped protrusions as a whole form a flat or curved surface (substrate mounting surface) of a predetermined shape on which the substrate W is placed. As a result, the multiple pin-shaped protrusions 40 support the substrate W. That is, the substrate mounting surface formed by the upper ends of the multiple pin-shaped protrusions is determined. As a result, the upper ends of the multiple pin-shaped protrusions come into contact with the substrate W, and the substrate W is supported. Note that, among the multiple pin-shaped protrusions 40, some may have upper ends that do not come into contact with the substrate W. This is because, even if such protrusions exist, it is possible to support the substrate W depending on the arrangement of the surrounding pin-shaped protrusions 40. The upper ends of the pin-shaped protrusions may come into contact with the substrate W entirely, or only partially.

[0051] The height of the pin-shaped protrusions 40 is preferably 10 μm or more and 500 μm or less. The height of the pin-shaped protrusions 40 refers to the distance from the upper surface 12 of the substrate 10 to the upper end of the pin-shaped protrusions. The upper end of the pin-shaped protrusions is preferably a flat surface of a predetermined size. In this case, the maximum diameter of the flat surface at the upper end of the pin-shaped protrusions is preferably 100 μm or more and 5 mm or less. The surface roughness of the flat surface at the upper end of the pin-shaped protrusions is preferably Ra 0.01 μm or more and 1.6 μm or less.

[0052] The electrode-embedded member 100 may be provided with lift pin holes (not shown), ventilation holes when used as a vacuum chuck, an annular protrusion, and the like.

[0053] (Configuration of substrate holding member) Next, the configuration of the substrate holding member according to the first embodiment will be described. Fig. 8 is a schematic cross-sectional view showing an example of the substrate holding member according to the first embodiment. The substrate holding member 200 includes an electrode-embedding member 100 and a support member 110. The basic configuration of the electrode-embedding member 100 is as described above. The substrate holding member 200 in Fig. 8 shows an example in which the electrode-embedding member 100 in Fig. 7 is used.

[0054] The support member 110 is made of a sintered ceramic body and supports the electrode-embedded member 100. This allows the substrate holding member 200 to be used in heaters with shafts, etc. The support member 110 is bonded to a predetermined position on the underside 14 of the electrode-embedded member 100. The bonding may be solid-state bonding or bonding using a bonding material. The support member 110 is preferably formed of a sintered ceramic body having the same main component as the base material 10 of the electrode-embedded member 100.

[0055] [Second embodiment] Next, an electrode-embedded member according to a second embodiment of the present invention will be described with reference to Figs. 9 to 11. Fig. 9 is a schematic cross-sectional view showing an example of an electrode-embedded member according to the second embodiment of the present invention. Fig. 9 shows a cross-section taken along line BB in Fig. 10. Fig. 10 is a schematic view showing an example of the upper surface of an electrode-embedded member according to the second embodiment of the present invention. Fig. 11 is a schematic cross-sectional view showing an example of a heater electrode layer of an electrode-embedded member according to the second embodiment of the present invention. The electrode-embedded member according to this embodiment has the same basic configuration as the electrode-embedded member according to the first embodiment, so only the differences will be described below.

[0056] The opening 32 preferably includes a shape of multiple arcs when the substrate 10 is viewed from the top surface 12. By forming the opening 32 of the groove 30 in an arc shape, the heater electrode 20 and its electrical connection wiring can be positioned outside the ends of the arcs. As a result, it becomes easier to apply power to multiple electrode regions. In addition, because a portion of the substrate 10 exists outside the ends of the arcs, the mechanical strength of the substrate 10 can be further increased.

[0057] When the opening 32 includes a shape of multiple arcs when the substrate 10 is viewed from the top surface 12, the multiple arc-shaped grooves 30 are preferably arranged in an annular shape as a whole. This allows the heater electrode 20 to be divided into an inner and outer side of the annular groove 30, except for the gaps at the ends of the arcs. This allows a temperature gradient in the substrate W to be set in the radial direction of the groove 30.

[0058] As shown in FIG. 11 , the heater electrode layer 24 of the electrode-embedded member 100 of FIG. 9 is divided by grooves 30 into three regions: an inner heater electrode region 21a, an outer heater electrode region 22a, and a gap heater electrode region 23a (the region between the ends of adjacent arc-shaped grooves 30). The inner heater electrode 21, the outer heater electrode 22, and the gap heater electrode 23 are formed in each region. That is, the heater electrode 20 is divided by the grooves 30 into three regions: the inner heater electrode 21, the outer heater electrode 22, and the gap heater electrode 23. The inner heater electrode 21 and the outer heater electrode 22 are electrically connected by the gap heater electrode 23. Note that the electrode formed in the gap heater electrode region 23a may be a wiring layer that electrically connects the inner heater electrode 21 and the outer heater electrode 22, instead of the gap heater electrode 23. Furthermore, the outer circumferential heater electrode 22 may be connected to a terminal different from the terminal 50 to which the inner circumferential heater electrode 21 is connected, through a wiring layer that does not intersect with the inner circumferential heater electrode 21 .

[0059] In FIG. 11, the inner heater electrode 21, the outer heater electrode 22, and the gap heater electrode 23 may have heater electrodes 20 embedded throughout their respective regions, or may have heater electrodes 20 embedded in their respective regions with shapes according to the design of the electrode-embedding member 100.

[0060] FIG. 12 is a schematic cross-sectional view showing a modified example of the heater electrode layer of the electrode-embedded member according to the second embodiment. In FIG. 12, the heater electrode layer 24 is partitioned by grooves 30 into three regions: an inner heater electrode region 21a, an outer heater electrode region 22a, and a gap heater electrode region 23a. The heater electrode 20 is partitioned by the grooves 30 into two regions: the inner heater electrode 21 and the outer heater electrode 22. Even when the grooves 30 are formed in multiple arcs, the inner heater electrode 21 and the outer heater electrode 22 may not be connected. Different powers may be applied to these heater electrodes 20.

[0061] In FIG. 10 , four arc-shaped grooves 30 are formed along a single circle centered on the center 16 of the substrate 10, but the number of arc-shaped grooves 30 is not limited to this. When forming arc-shaped grooves 30, they may be formed in a double or more concentric circle configuration. Furthermore, the annular grooves 30 of the first embodiment may be combined with the arc-shaped grooves of this embodiment to form a double or more concentric circle configuration. Furthermore, arc-shaped grooves 30 may be combined with linear grooves 30. When the grooves 30 include an arc-shaped shape when the substrate 10 is viewed from the top surface 12, an additional circular groove 30 may be provided in the center.

[0062] Fig. 13 is a schematic cross-sectional view showing a modified example of the electrode-embedded member according to the second embodiment. As shown in Fig. 13, it is preferable that an electrostatic attraction electrode or a high-frequency electrode (another electrode 70) is further embedded in the substrate 10. Fig. 13 shows an example in which the other electrode 70 is also divided into an inner electrode 71 and an outer electrode 72 by a groove 30. Fig. 13 does not show the terminal 50 and terminal hole 52 connected to the other electrode 70.

[0063] When an electrostatic chucking electrode or a high-frequency electrode (another electrode 70) is further embedded in the substrate 10 as shown in FIG. 13 , the opening 32 preferably has a combination of one or more arc shapes, dividing the upper surface 12 into an inner region of the arc, an outer region of the arc, and a gap between adjacent ends of the arc. Furthermore, the electrostatic chucking electrode or the high-frequency electrode is preferably embedded in the inner region of the arc, the outer region of the arc, and a gap between adjacent ends of the arc. That is, the electrostatic chucking electrode or the high-frequency electrode embedded in the inner region and the outer region of the arc is preferably electrically connected to the electrostatic chucking electrode, the high-frequency electrode, or the wiring layer embedded in the gap between adjacent ends of the arc. This makes it easier to apply a voltage from the inside to the outer electrode of the arc-shaped groove, thereby improving the reliability of the electrical connection of the electrodes. Furthermore, additional functions, such as the electrostatic chucking function and the application of a high-frequency power bias in the semiconductor manufacturing process, can be more stably performed. Furthermore, costs are lower than connecting through vias or wiring.

[0064] Fig. 14 is a schematic cross-sectional view showing an example of another electrode layer of an electrode-embedded member according to the second embodiment. In the electrode-embedded member 100 of Fig. 13, as shown in Fig. 14, the other electrode layer 74 is partitioned by grooves 30 into three regions: an inner electrode region 71a, an outer electrode region 72a, and a gap electrode region 73a (the region of the gap between the ends of adjacent arc-shaped grooves 30). An inner electrode 71, an outer electrode 72, and a gap electrode 73 are formed in each region. That is, the other electrode 70 is partitioned by the grooves 30 into three regions: the inner electrode 71, the outer electrode 72, and the gap electrode 73. The inner electrode 71 and the outer electrode 72 are electrically connected by the gap electrode 73.

[0065] In FIG. 14, the inner electrode 71, the outer electrode 72, and the gap electrode 73 may have other electrodes 70 embedded throughout their respective regions, or may have other electrodes 70 embedded within their respective regions that have shapes according to the design of the electrode-embedding member 100.

[0066] The heater electrode 20 of the electrode-embedded member according to the first embodiment and another electrode 70 of the electrode-embedded member according to the second embodiment may be combined to form an electrode-embedded member 100. That is, as shown in Fig. 12, the heater electrode 20 is divided into two regions by grooves 30, and different powers can be applied to each of these regions, and as shown in Fig. 14, the electrode-embedded member 100 can be formed by combining another electrode 70 which is divided into three regions by grooves 30, and in which an inner electrode 71 and an outer electrode 72 are electrically connected by a gap electrode 73.

[0067] This allows the heater electrode 20 to apply different power to different sections, creating a sharp temperature gradient on the substrate. The other electrodes 70 can be connected to a power supply with a constant voltage and frequency, improving the reliability of the electrical connection of the electrodes. This also allows additional functions, such as electrostatic chucking in semiconductor manufacturing processes and applying a bias using high-frequency power, to be performed more stably. It also reduces costs compared to connecting through vias or wiring.

[0068] (Configuration of substrate holding member) Next, the configuration of a substrate holding member according to the second embodiment will be described. Fig. 15 is a schematic cross-sectional view showing an example of a substrate holding member according to the second embodiment. The substrate holding member 200 includes an electrode-embedding member 100 and a support member 110. The basic configuration of the electrode-embedding member 100 is as described above. The substrate holding member 200 in Fig. 15 shows an example in which the electrode-embedding member 100 in Fig. 13 is used.

[0069] The substrate holding member 200 according to this embodiment is the same as the substrate holding member 200 according to the first embodiment except that the electrode-embedded member 100 according to this embodiment is used.

[0070] Fig. 16 is a schematic cross-sectional view showing a modified example of the substrate holding member according to the second embodiment. Fig. 16 shows a substrate holding member 200 using an electrode-embedded member 100 configured by combining the heater electrode 20 of the electrode-embedded member according to the first embodiment with another electrode 70 of the electrode-embedded member according to the second embodiment. The upper surface 12 is configured as shown in Fig. 10, the heater electrode layer 24 is configured as shown in Fig. 12, and the other electrode 70 is configured as shown in Fig. 14. In this way, the features of the first and second embodiments can be combined in various ways.

[0071] [Method for manufacturing electrode-embedded members] Next, a method for manufacturing the electrode-embedded members according to the first and second embodiments will be described. The electrode-embedded members according to the embodiments of the present invention are manufactured, for example, by a molded body hot pressing method described below. Note that the manufacturing method is not limited to this method, and other methods such as a powder hot pressing method or a conventional green sheet lamination method may also be used. The powder hot pressing method is a method in which ceramic raw material powder and predetermined heating resistors and electrodes are alternately stacked to embed the heating resistors and electrodes inside the ceramic, and then the resultant is uniaxial hot press fired.

[0072] Furthermore, when complex grooves or wiring or vias need to be formed, the following manufacturing method can also be used. First, multiple electrode-embedding member precursors are prepared, each consisting of a ceramic sintered body produced by various manufacturing methods and having groove shapes, via shapes, and shapes for embedding wiring. The electrode-embedding member precursors may be embedded with heater electrode or via material or wiring, as needed. The multiple electrode-embedding member precursors are then stacked and bonded with or without a bonding material to produce an electrode-embedding member.

[0073] The method for manufacturing an electrode-embedded member according to an embodiment of the present invention using a molded body hot pressing method includes a ceramic molded body forming step, a ceramic degreased body producing step, a substrate precursor forming step, a substrate firing step, and a substrate processing step.

[0074] In the ceramic molded body forming process, multiple ceramic molded bodies are formed from a ceramic raw material powder containing, for example, AlN as a main component. A sintering aid may be added as needed. For example, an AlN ceramic raw material powder is mixed with appropriate additives, such as Y2O3 as the Y component of the sintering aid, a binder, a plasticizer, and a dispersant, to prepare a slurry, and granules (ceramic raw material powder) are formed by a method such as spray drying. The granulated powder is then pressure-molded to form multiple ceramic molded bodies. In addition to aluminum nitride, silicon carbide, aluminum oxide, silicon nitride, and the like can be used as the raw ceramic powder.

[0075] The ceramic raw material powder preferably has a high purity, preferably 96% or more, more preferably 98% or more, and preferably has an average particle size of 0.1 μm to 1.0 μm.

[0076] The mixing method may be either wet or dry, and a mixer such as a ball mill or a vibration mill may be used. The molding method may be a known method such as uniaxial pressing or cold isostatic pressing (CIP). The method for forming the ceramic compact is not limited to pressure molding; for example, green sheet lamination or slip casting may also be used. The ceramic compact can be manufactured by appropriately degreasing or further calcining the resulting product.

[0077] After molding, the ceramic compact may be machined to adjust its shape. Also, grooves may be formed on one side of the ceramic compact (the surface to be bonded to another ceramic compact) to match the shapes of the heater electrode, other electrodes, vias, wiring, etc. Machining may be performed after degreasing.

[0078] In the ceramic degreased body manufacturing step, a plurality of ceramic molded bodies are degreased at a predetermined temperature or higher for a predetermined time or longer to manufacture a plurality of ceramic degreased bodies.

[0079] The ceramic compact is heat-treated at a temperature of, for example, 500°C to 900°C to produce a degreased ceramic body. The degreasing time is preferably 1 hour to 120 hours. An atmospheric or nitrogen atmosphere furnace can be used for degreasing, but an atmospheric furnace is preferred to remove organic components of the binder.

[0080] In the substrate precursor formation process, heater electrodes and, if necessary, other electrodes, via material, and wiring are prepared, and these are combined with multiple ceramic degreased bodies. A substrate precursor is then formed, which has a substrate mounting surface on its upper surface, is formed in a flat shape, and has the heater electrodes and other components embedded in it. The other electrodes, via material, and wiring are formed by foil, thin plate, wire, mesh, or porous body of molybdenum or tungsten, or by paste filling or printing.

[0081] The heater electrode is prepared in a shape that corresponds to the design of the electrode-embedding member. The heater electrode can be in various shapes, such as a mesh or foil, and can be made of various materials, such as molybdenum or tungsten.

[0082] In the substrate firing process, the formed substrate precursor is uniaxially pressurized and fired in a direction perpendicular to the substrate mounting surface to fire the substrate. The firing conditions vary depending on the material, but when using ceramics whose main component is AlN, the pressure applied is preferably 1 MPa or more. The firing temperature is preferably 1700°C or higher and 2000°C or lower. The firing time is preferably 1 hour or higher and 12 hours or lower, and more preferably 1 hour or higher and 5 hours or lower. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. As a result, multiple degreased ceramic bodies are sintered to form a ceramic sintered body, which is integrated to obtain a substrate with heater electrodes and other components embedded therein.

[0083] In the substrate processing step, the outer shape of the substrate is processed. Grooves of a predetermined shape are formed at predetermined positions on the top surface of the substrate. If necessary, pin-shaped protrusions or the like are formed. Terminal holes for connecting terminals are also drilled at predetermined positions on the bottom surface.

[0084] Then, terminals are connected to the terminal holes with brazing material etc. The terminals can be made of Ni etc. The brazing material can be Au brazing material etc.

[0085] A ceramic calcined body preparation step may be provided between the ceramic degreased body preparation step and the substrate precursor formation step. When the ceramic calcined body preparation step is provided, the ceramic degreased body is calcined at a predetermined temperature to prepare a ceramic calcined body. This allows for higher dimensional accuracy of the electrode-embedded member. Although the calcination conditions vary depending on the material, when using ceramics containing AlN as the main component, the calcination temperature is preferably 1200°C or higher and 1700°C or lower. The calcination time is preferably 0.5 hours or higher and 12 hours or lower. The calcination atmosphere is preferably a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. When the calcined body preparation step is provided, machining may be performed after the calcined body preparation step.

[0086] In this manner, it is possible to manufacture an electrode-embedded member that can provide a sharp temperature gradient to the substrate placed thereon.

[0087] [Method of manufacturing substrate holding member] Next, a description will be given of a method for manufacturing a substrate holding member according to the first and second embodiments. The method for manufacturing a substrate holding member according to the embodiments of the present invention includes an electrode-embedding member preparation step, a support member compact formation step, a support member degreased body preparation step, a support member firing step, and a bonding step.

[0088] In the electrode-embedding member preparation step, the electrode-embedding member manufactured as described above is prepared. When manufacturing a substrate holding member, the formation of grooves in the electrode-embedding member and the drilling of terminal holes may be performed after the joining step with the support member. Furthermore, it is preferable to connect the terminals after the joining step with the support member.

[0089] In the support member compact forming process, the support member compact is formed from a ceramic raw material powder mainly composed of AlN, for example. The method for producing the ceramic raw material powder and the method for forming the support member compact may be the same as those in the ceramic compact forming process. It is preferable that the ceramic raw material powder does not contain a sintering aid.

[0090] In the support member degreased body preparation step, the support member molded body is degreased at a predetermined temperature or higher for a predetermined time or longer to prepare a support member degreased body. The numerical ranges of the degreasing conditions for the support member molded body may be the same as those for the ceramic degreased body preparation step in the manufacturing method for an electrode-embedded member. The support member degreased body preparation step and the ceramic degreased body preparation step may be performed simultaneously.

[0091] In the support member firing process, the degreased support member is fired to form a support member that supports the ceramic substrate. The firing conditions vary depending on the material, but when using ceramics whose main component is AlN, the support member is preferably fired at atmospheric pressure. The firing temperature is preferably 1800°C or higher and 2000°C or lower. The firing time is preferably 1 hour or higher and 12 hours or lower. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere.

[0092] In the bonding step, the electrode-embedding member and the support member are bonded together. The bonding can be performed using either a bonding method that uses a bonding material or a bonding method that does not use a bonding material. These bonding methods can be applied to a method for manufacturing an electrode-embedding member by stacking and bonding multiple electrode-embedding member precursors.

[0093] First, we will explain the bonding method using a bonding material. First, we prepare a bonding material and apply it to at least one of the bonding portion where the support member is bonded to the underside of the protruding portion of the ceramic substrate or the end face of the support member on the bonding portion side. The bonding portion and the end face of the support member on the bonding portion side preferably have a surface roughness Ra of 1.6 μm or less, and more preferably are polished to 0.4 μm or less. The thickness of the applied bonding material is preferably 5 μm or more and 30 μm or less.

[0094] Next, a support member is placed on the bonding portion, and the substrate is heated while being pressurized in a direction perpendicular to the substrate mounting surface. The bonding conditions vary depending on the material, but when using ceramics whose main component is AlN, the pressure applied is preferably 5 kPa or more. The heating temperature is preferably 1500°C or more and 1800°C or less. The heating time is preferably 0.5 hours or more and 5 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. This allows the ceramic substrate and the support member to be bonded.

[0095] The bonding material may be any material capable of bonding the ceramic substrate and the support member. For example, if the ceramic substrate and the support member are made of ceramics primarily composed of AlN, the bonding material may be a paste of mixed powder containing at least Y2O3 powder in AlN powder, which is the same primary component as the ceramic substrate and the support member. Alternatively, the bonding material may be a paste containing 90 wt% to 95 wt% AlN and 5 wt% or more Y2O3, and optionally containing CaO, MgO, ZrO2, and SiO2 to adjust the temperature at which the material becomes molten during bonding.

[0096] Next, a bonding method that does not use a bonding material will be described. A support member is placed at the bonding portion where the support member is bonded to the underside of the electrode-embedded member. The bonding portion and the end face of the support member on the bonding portion side are preferably polished to a surface roughness Ra of 0.1 μm or less. Next, the substrate is heated while being pressed in a direction perpendicular to the substrate-mounting surface. The bonding conditions vary depending on the material, but when using ceramics whose main component is AlN, the pressure applied is preferably 1 MPa or more. The heating temperature is preferably 1600°C or more and 2000°C or less. The heating time is preferably 0.5 hours or more and 6 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. This allows the ceramic substrate and the support member to be bonded.

[0097] If no grooves or terminal holes are provided in the electrode-embedding member, they are provided after joining to the support member. Then, terminals are connected to the terminal holes using brazing material or the like. Ni or the like can be used as the terminal. Au brazing material or the like can also be used as the brazing material.

[0098] In this manner, a substrate holding member capable of providing a sharp temperature gradient to the substrate placed thereon can be manufactured.

[0099] [Examples and Comparative Examples] Example 1 Example 1 is a substrate holding member with four arc-shaped grooves as shown in Figure 16. The material of the base material and support member is a ceramic sintered body mainly composed of aluminum nitride (AlN). The heater electrodes are made of Mo mesh (wire diameter 0.1 mm) processed into an arc-shaped shape. The inner heater electrode embedded in the inner heater electrode region has an outer diameter within a range of approximately 210 mm. The outer heater electrode embedded in the outer heater electrode region has an inner diameter within a range of approximately 225 mm and an outer diameter within a range of approximately 300 mm.

[0100] The radio-frequency electrodes were made of Mo foil with a thickness of 0.1 mm and processed into the following shape: an inner electrode with an outer diameter of approximately 210 mm embedded in the inner electrode region, and outer electrodes with an inner diameter of approximately 225 mm and an outer diameter of approximately 300 mm embedded in the outer electrode region, connected by gap electrodes embedded in four gap electrode regions.

[0101] The heater electrode and the electrostatic attraction electrode were embedded in a substrate to prepare a substantially circular electrode-embedded member and a support member having a diameter of φ310 mm and a thickness of 25 mm. The electrode-embedded member and the support member were then joined together.

[0102] After joining the electrode-embedded member and the support member, multiple pin-shaped protrusions and grooves were formed by blasting. The arc-shaped groove was formed with a width of 2 mm so that the center line of the groove was located midway between the areas where the two heater electrodes were embedded (φ217.5 mm). The groove depth was also formed so that the distance T between the bottom of the groove and the underside of the substrate was 2 mm. The multiple pin-shaped protrusions were formed concentrically in an area within φ290 mm from the center of the substrate, with a diameter of 2 mm and a height of 150 μm from the top surface. The surface roughness Ra of the multiple pin-shaped protrusions was set to 0.1 μm.

[0103] The inner heater electrode was connected to the terminal by drilling a terminal hole in the substrate from the bottom side and inserting a Ni terminal into it. The outer heater electrode was connected to a Mo conductive layer (wiring) embedded between the bottom of the groove and the bottom surface of the substrate using a via structure. The conductive layer was connected to the terminal by drilling a terminal hole in the substrate from the bottom side and inserting a Ni terminal into it. The heater electrodes were connected to heater power sources by connecting each of the two heater electrodes to a separate heater power source via a terminal, allowing power adjustment. The high-frequency electrode was connected to the terminal by drilling a terminal hole in the substrate from the bottom side and inserting a Ni terminal into it. All terminals were formed to fit inside the cylindrical support member.

[0104] (Comparative Example 1) In Comparative Example 1, a substrate holding member was produced under the same conditions as in Example 1, except that no grooves were formed.

[0105] In Example 2, a substrate holding member was produced under the same conditions as in Example 1, except that the groove depth was formed so that the distance T between the bottom of the groove and the lower surface of the substrate was 5 mm.

[0106] In Example 3, a substrate holding member was produced under the same conditions as in Example 1, except that the groove depth was formed so that the distance T between the bottom of the groove and the lower surface of the substrate was 8 mm.

[0107] In Example 4, except that the groove was formed in an annular shape, a substrate holding member was produced under the same conditions as in Example 1. The inner and outer radio frequency electrodes were connected to the same power supply by vias and wiring.

[0108] In Example 5, a substrate holding member was produced under the same conditions as in Example 1, except that the grooves were formed in an arc-like shape at an angle.

[0109] In Example 6, a substrate holding member was produced under the same conditions as in Example 1, except that the grooves were formed in an arc-shaped, stepped shape. The electrode-embedding member of Example 6 was produced by producing multiple electrode-embedding member precursors in which heater electrodes and the like were embedded, forming grooves in advance so that the grooves would become stepped grooves after bonding, and then bonding the precursors. The bonding of the multiple electrode-embedding member precursors was carried out without using a bonding material.

[0110] (Method for evaluating substrate holding members) A substrate holding member of the comparative example was placed in the chamber. A substrate temperature measurement wafer (300 mm diameter x 0.75 mm thick) with multiple thermocouples arranged on the outer and inner regions was placed on the substrate mounting surface of the substrate holding member. The power applied to the inner and outer heater electrodes was adjusted so that the inner and outer thermocouples embedded in the substrate holding member reached 500°C in vacuum. After the heater temperature reached a steady state, the temperature was measured using the substrate temperature measurement wafer. The power at this time was recorded.

[0111] In the example substrate holder, the same power was applied to the inner heater electrode and the outer heater electrode. The temperatures of the outer and inner sides of the substrate were measured using a wafer for measuring substrate temperature. That is, the extent to which the outer substrate temperature gradient relative to the inner substrate temperature could be achieved by providing grooves was evaluated.

[0112] (Evaluation of substrate holding members) In the comparative example of a substrate holder without grooves, the substrate temperature was made uniform by adjusting the power on the outside and inside. By providing grooves as in the present invention, the substrate temperature on the outside was increased relative to the inside, even when the same power was applied as in the comparative example. In other words, the horizontal diffusion of heat from the heater electrode was suppressed, creating a temperature gradient across the substrate surface.

[0113] Comparing the Examples, it was found that the temperature difference decreased as the distance T between the bottom of the groove and the underside of the substrate increased. In the Examples, the parallel distance D between the top and bottom surfaces of the substrate was constant, so it is presumed that the horizontal diffusion of heat increased as a result of the increase in T / D. It was also confirmed that Examples 5 and 6, which had diagonal grooves and stepped grooves, were able to achieve a larger temperature difference than the other Examples.

[0114] Although there were some areas where the high-frequency electrode was not present when viewed from above, the plasma process could be performed on the substrate without any problems with all of the substrate holding members. Therefore, in terms of ease of manufacturing and cost, the substrate holding members having arc-shaped grooves formed therein, as in Examples 1 to 3, 5, and 6, are preferred.

[0115] From the above, it was confirmed that the electrode-embedding member and substrate-holding member of the present invention can provide a sharp temperature gradient to the substrate placed thereon.

[0116] The present invention is not limited to the above-described embodiments, and various modifications and equivalents are included within the spirit and scope of the present invention. Furthermore, the structure, shape, number, position, size, etc. of the components shown in each drawing are for the convenience of explanation and may be changed as appropriate. [Explanation of symbols]

[0117] 10 Base material 12 Top side 14 Bottom side 16 center 18 Outer circumference 20 heater electrode 21 Inner heater electrode 21a Inner heater electrode area 22 Outer heater electrode 22a Outer heater electrode area 23 Gap heater electrode 23a Gap heater electrode area 24 heater electrode layer 26 Upper end surface 28 Lower end surface 30 grooves 32 Opening 34 Bottom 40 Pin-shaped protrusion Terminals 50 and 51 52 terminal hole 70 Other electrodes 71 Inner electrode 71a Inner electrode area 72 Outer electrode 72a Outer electrode area 73 Gap electrode 73a Gap electrode area 74 Other electrode layers 100 Electrode embedding member 110 Support member 200 Substrate holding member

Claims

1. An electrode embedding member, a base material integrally formed of a ceramic sintered body; a heater electrode embedded in the substrate, the substrate has one or more grooves formed on the upper surface thereof, each groove having an opening; a bottom of the groove reaches at least a heater electrode layer in which the heater electrode is embedded in a vertical cross section of the substrate; the heater electrode is partitioned into a plurality of regions by the grooves, The electrode-embedding member is characterized in that the opening includes a plurality of arc shapes arranged at intervals in the circumferential direction when the substrate is viewed from above.

2. 2. The electrode-embedding member according to claim 1, wherein the opening has a shape that is annular, linear, or a combination thereof when the base is viewed from above.

3. An electrode-embedded member as described in claim 1 or claim 2, characterized in that the substrate further has an electrostatic adsorption electrode or a high-frequency electrode embedded therein.

4. The substrate further has an electrostatic adsorption electrode or a high-frequency electrode embedded therein, the opening is a combination of one or more arc shapes, dividing the upper surface into an area inside the arc, an area outside the arc, and an area between adjacent ends of the arc; 2. The electrode-embedded member according to claim 1, wherein the electrostatic attraction electrode or the high-frequency electrode is embedded in an area inside the arc, an area outside the arc, and a gap between adjacent ends of the arc.

5. An electrode-embedded member described in any one of claims 1 to 4, characterized in that the groove has a shape in which the opening and the bottom are horizontally offset in the cross section.

6. An electrode-embedded member described in any one of claims 1 to 5, characterized in that the upper end surface of the heater electrode layer is at a distance of 1 mm or more and 8 mm or less from the upper surface.

7. When the parallel distance between the upper surface of the substrate and the lower surface facing the upper surface is D and the distance between the bottom of the groove and the lower surface of the substrate is T, 0<T / D≦0.3 7. The electrode-embedding member according to claim 1, wherein:

8. An electrode-embedded member described in any one of claims 1 to 7, characterized in that the heater electrode is divided into multiple areas to which different powers can be applied.

9. A substrate holding member, An electrode-embedding member according to any one of claims 1 to 8; a support member bonded to a lower surface of the base material opposite to the upper surface, the support member supporting the electrode-embedded member.

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