Peeling method, peeling device, and peeling system

Abstract

To provide a technique that can improve the efficiency of peeling treatment.SOLUTION: A peeling method according to an aspect of the present disclosure includes the steps of holding and peeling. The holding step holds a polymerized substrate in which a first substrate and a second substrate are joined. In the peeling step, the first substrate is peeled from the polymerized substrate starting from the side surface of the polymerized substrate. Moreover, the peeling step includes the step of contacting the side surface with a fluid containing water.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a stripping method, a stripping device, and a stripping system. [Background technology]

[0002] In recent years, for example, in the manufacturing process of semiconductor devices, semiconductor substrates such as silicon wafers and compound semiconductor wafers have become larger in diameter and thinner. Large-diameter, thin semiconductor substrates may warp or crack during transportation or polishing. For this reason, a support substrate is bonded to the semiconductor substrate to reinforce it, and then the substrate is transported and polished, and then the support substrate is peeled off from the semiconductor substrate (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-35562 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can improve the efficiency of the peeling process. [Means for solving the problem]

[0005] A peeling method according to one embodiment of the present disclosure includes a holding step and a peeling step. The holding step holds a laminated substrate formed by bonding a first substrate and a second substrate. The peeling step peels the first substrate from the laminated substrate starting from a side surface of the laminated substrate. The peeling step also includes a step of contacting the side surface with a fluid containing water. [Effects of the Invention]

[0006] According to the present disclosure, the peeling process can be made more efficient. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view showing the configuration of a separation system according to an embodiment. [Figure 2] FIG. 2 is a schematic side view of the laminated substrate according to the embodiment. [Figure 3] FIG. 3 is a schematic side view showing the configuration of the peeling device according to the embodiment. [Figure 4] FIG. 4 is a schematic plan view of the first holding part according to the embodiment. [Figure 5] FIG. 5 is a flowchart showing the procedure of the delamination process executed by the delamination device according to the embodiment. [Figure 6] FIG. 6 is an enlarged side view showing one step of the peeling treatment according to the embodiment. [Figure 7] FIG. 7 is an enlarged side view showing one step of the peeling treatment according to the embodiment. [Figure 8] FIG. 8 is a diagram for explaining the change in the state of the bonded portion during the peeling process according to the embodiment. [Figure 9] FIG. 9 is a diagram showing the difference in bonding strength between when moisture is supplied to the laminated substrate and when moisture is not supplied during the peeling process. [Figure 10] FIG. 10 is an enlarged side view showing one step of the peeling treatment according to the embodiment. [Figure 11] FIG. 11 is an enlarged side view showing one step of the peeling treatment according to the embodiment. [Figure 12] FIG. 12 is an enlarged side view showing one step of the peeling treatment according to the first modification of the embodiment. [Figure 13] FIG. 13 is a schematic plan view showing one step of the peeling treatment according to the first modification of the embodiment. [Figure 14] FIG. 14 is a schematic side view showing the configuration of a peeling device according to the second modification of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the peeling method, peeling device, and peeling system disclosed in the present application will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the embodiments shown below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. Furthermore, the drawings may include parts with different dimensional relationships and ratios.

[0009] In recent years, for example, in the manufacturing process of semiconductor devices, semiconductor substrates such as silicon wafers and compound semiconductor wafers have become larger in diameter and thinner. Large-diameter, thin semiconductor substrates are at risk of warping or cracking during transportation or polishing. For this reason, a support substrate is bonded to the semiconductor substrate to reinforce it, before transportation and polishing, and then the support substrate is peeled off from the semiconductor substrate.

[0010] In recent years, in addition to polymerized substrates in which substrates are bonded together with an adhesive, polymerized substrates in which substrates are bonded together by van der Waals forces and hydrogen bonds (i.e., intermolecular forces) have been widely used. However, there is still room for improvement in the technology for efficiently peeling one substrate from such polymerized substrates with high bonding strength.

[0011] Therefore, there is a need for a technology that can overcome the above-mentioned problems and improve the efficiency of the peeling process.

[0012] <Structure of the peeling system> First, the configuration of a delamination system 1 according to an embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a schematic plan view showing the configuration of the delamination system 1 according to an embodiment. Fig. 2 is a schematic side view of a laminated substrate T according to an embodiment.

[0013] In the following description, to clarify the positional relationships, the X-axis direction, Y-axis direction, and Z-axis direction that are orthogonal to each other are defined, and the positive Z-axis direction is defined as the vertically upward direction.

[0014] The delamination system 1 shown in Fig. 1 delaminates the first substrate W1 from a laminated substrate T in which the first substrate W1 and the second substrate W2 are bonded by intermolecular forces as shown in Fig. 2. Hereinafter, the first substrate W1 will be referred to as the "upper wafer W1," and the second substrate W2 will be referred to as the "lower wafer W2." In other words, the upper wafer W1 is an example of the first substrate, and the lower wafer W2 is an example of the second substrate.

[0015] 2, of the surfaces of the upper wafer W1, the surface that is bonded to the lower wafer W2 will be referred to as a "bonding surface W1j," and the surface opposite the bonding surface W1j will be referred to as a "non-bonding surface W1n." Also, of the surfaces of the lower wafer W2, the surface that is bonded to the upper wafer W1 will be referred to as a "bonding surface W2j," and the surface opposite the bonding surface W2j will be referred to as a "non-bonding surface W2n."

[0016] The first substrate W1 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer on which multiple electronic circuits are formed. The second substrate W2 is a bare wafer on which no electronic circuits are formed. The first substrate W1 and the second substrate W2 have approximately the same diameter. The second substrate W2 may have electronic circuits formed thereon.

[0017] 1, the stripping system 1 includes two processing blocks: a first processing block 10 and a second processing block 20. The first processing block 10 and the second processing block 20 are disposed adjacent to each other.

[0018] In the first processing block 10, the laminated substrate T is loaded, the laminated substrate T is peeled, and the lower wafer W2 is cleaned and unloaded after peeling. The first processing block 10 includes a load / unload station 11, a first transfer region 12, a standby station 13, a peeling station 14, and a first cleaning station 15.

[0019] The loading / unloading station 11, the waiting station 13, the peeling station 14, and the first cleaning station 15 are arranged adjacent to the first transport region 12. Specifically, the loading / unloading station 11 and the waiting station 13 are arranged side by side on the negative Y-axis side of the first transport region 12, and the peeling station 14 and the first cleaning station 15 are arranged side by side on the positive Y-axis side of the first transport region 12.

[0020] The carry-in / out station 11 is provided with a plurality of cassette mounting stages, and each cassette mounting stage is mounted with a cassette Ct that accommodates the laminated substrate T and a cassette C2 that accommodates the lower wafer W2 after separation.

[0021] A first transfer device 121 that transfers the laminated substrate T or the lower wafer W2 after separation is disposed in the first transfer region 12. The first transfer device 121 includes a transfer arm that is capable of moving horizontally, moving up and down vertically, and rotating around the vertical direction, and a substrate holder attached to the tip of the transfer arm.

[0022] In the first transfer area 12, the first transfer device 121 performs processes of transporting the laminated substrate T to the waiting station 13 and the peeling station 14, and processes of transporting the lower wafer W2 after peeling to the first cleaning station 15 and the loading / unloading station 11.

[0023] In the standby station 13, a standby process is performed as necessary to temporarily hold the laminated substrate T waiting for processing. The standby station 13 is provided with a mounting table on which the laminated substrate T transported by the first transport device 121 is placed.

[0024] A separation device 5 (see FIG. 3) is disposed in the separation station 14, and the separation device 5 performs a separation process to separate the upper wafer W1 from the laminated substrate T. The specific configuration and operation of the separation device 5 will be described later.

[0025] The lower wafer W2 after separation is subjected to a cleaning process in the first cleaning station 15. A first cleaning device that cleans the upper wafer W1 after separation is disposed in the first cleaning station 15. As the first cleaning device, for example, the cleaning device disclosed in Japanese Patent Application Laid-Open No. 2013-033925 can be used.

[0026] In addition, in the second processing block 20, cleaning and unloading of the upper wafer W1 after separation are performed. The second processing block 20 includes a delivery station 21, a second cleaning station 22, a second transfer region 23, and an unloading station 24. The second cleaning station 22 is an example of a cleaning device.

[0027] The delivery station 21, the second cleaning station 22, and the unloading station 24 are arranged adjacent to the second transfer region 23. Specifically, the delivery station 21 and the second cleaning station 22 are arranged side by side on the positive Y-axis side of the second transfer region 23, and the unloading station 24 is arranged side by side on the negative Y-axis side of the second transfer region 23.

[0028] The delivery station 21 is disposed adjacent to the separation station 14 of the first processing block 10. In the delivery station 21, a delivery process is performed in which the upper wafer W1 after separation is received from the separation station 14 and delivered to the second cleaning station 22.

[0029] A second transfer device 211 is disposed in the delivery station 21. The second transfer device 211 has a non-contact holding unit such as a Bernoulli chuck, and the upper wafer W1 after separation is transferred by the second transfer device 211 in a non-contact manner.

[0030] A second cleaning process for cleaning the upper wafer W1 after separation is performed in the second cleaning station 22. A second cleaning device for cleaning the upper wafer W1 after separation is disposed in the second cleaning station 22. As the second cleaning device, for example, the cleaning device disclosed in JP 2013-033925 A can be used.

[0031] A third transfer device 231 that transfers the upper wafer W1 after separation is disposed in the second transfer region 23. The third transfer device 231 includes a transfer arm that is capable of moving horizontally, moving up and down vertically, and rotating about the vertical direction, and a substrate holder attached to the tip of the transfer arm. In the second transfer region 23, the third transfer device 231 transfers the upper wafer W1 after separation to the unloading station 24.

[0032] The unloading station 24 is provided with a plurality of cassette mounting stages, and each cassette mounting stage is mounted with a cassette C1 that accommodates the upper wafer W1 after separation.

[0033] The peeling system 1 also includes a control device 30. The control device 30 controls the operation of the peeling system 1. The control device 30 is, for example, a computer, and includes a control unit 31 and a storage unit 32. The storage unit 32 stores programs for controlling various processes such as the bonding process. The control unit 31 controls the operation of the peeling system 1 by reading and executing the programs stored in the storage unit 32.

[0034] Such a program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 32 of the control device 30. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0035] In the peeling system 1 configured as described above, first, the first transport device 121 of the first processing block 10 removes the laminated substrate T from the cassette Ct placed in the loading / unloading station 11 and loads the removed laminated substrate T into the waiting station 13.

[0036] For example, if a laminated substrate T is waiting to be processed due to a difference in processing time between devices, the laminated substrate T can be temporarily kept waiting using a temporary waiting section provided in the waiting station 13, thereby reducing the lost time between a series of processes.

[0037] Next, the laminated substrate T is removed from the standby station 13 by the first transfer device 121 and carried into the peeling station 14. Then, the peeling device 5 arranged in the peeling station 14 performs a peeling process on the laminated substrate T. By this peeling process, the laminated substrate T is separated into the upper wafer W1 and the lower wafer W2.

[0038] After the delamination, the lower wafer W2 is removed from the delamination station 14 by the first transfer device 121 and carried into the first cleaning station 15. In the first cleaning station 15, the first cleaning device performs a first cleaning process on the lower wafer W2 after the delamination. The first cleaning process cleans the bonding surface W2j of the lower wafer W2.

[0039] After the first cleaning process, the lower wafer W2 is removed from the first cleaning station 15 by the first transfer device 121 and stored in the cassette C2 placed in the carry-in / out station 11. Thereafter, the cassette C2 is removed from the carry-in / out station 11 and collected. In this way, the process on the lower wafer W2 is completed.

[0040] Meanwhile, in the second processing block 20, in parallel with the processing in the first processing block 10 described above, processing is performed on the upper wafer W1 after separation.

[0041] In the second processing block 20, first, the second transfer device 211 disposed in the delivery station 21 takes out the upper wafer W1 after separation from the separation station 14 and carries it into the second cleaning station 22.

[0042] Here, after separation, the upper wafer W1 is held by the separation device 5 on its upper surface side, i.e., the non-bonding surface W1n side, and the second transfer device 211 holds the bonding surface W1j side of the upper wafer W1 from below in a non-contact manner. Thereafter, the second transfer device 211 inverts the held upper wafer W1 and places it in the second cleaning device of the second cleaning station 22.

[0043] As a result, the upper wafer W1 is placed in the second cleaning device with the bonding surface W1j facing upward. Then, the second cleaning device performs a second cleaning process to clean the bonding surface W1j of the upper wafer W1. The second cleaning process cleans the bonding surface W1j of the upper wafer W1.

[0044] After the second cleaning process, the upper wafer W1 is removed from the second cleaning station 22 by the third transfer device 231 disposed in the second transfer region 23, and is stored in the cassette C1 placed in the unloading station 24. Thereafter, the cassette C1 is removed from the unloading station 24 and collected. In this way, the process for the upper wafer W1 is also completed.

[0045] As described above, the delamination system 1 according to the embodiment is configured to include a front end for the laminated substrate T and the lower wafer W2 after delamination, and a front end for the upper wafer W1 after delamination.

[0046] Here, the front end for the laminated substrate T and the lower wafer W2 after peeling refers to the loading / unloading station 11 and the first transport device 121, and the front end for the upper wafer W1 after peeling refers to the unloading station 24 and the third transport device 231.

[0047] This allows the process of transporting the upper wafer W1 to the loading / unloading station 11 and the process of transporting the lower wafer W2 to the unloading station 24 to be performed in parallel, thereby allowing a series of substrate processing steps to be performed efficiently.

[0048] In addition, in the delamination system 1 according to the embodiment, the delamination station 14 and the second cleaning station 22 are connected via the delivery station 21. This allows the upper wafer W1 after delamination to be directly transferred from the delamination station 14 to the second cleaning station 22 without passing through the first transfer region 12 or the second transfer region 23, thereby enabling smooth transfer of the upper wafer W1 after delamination.

[0049] <Configuration of peeling device> Next, the configuration of the peeling device 5 installed in the peeling station 14 will be described with reference to Fig. 3. Fig. 3 is a schematic side view showing the configuration of the peeling device 5 according to the embodiment.

[0050] 3, the peeling apparatus 5 includes a processing chamber 100. A loading / unloading port (not shown) is provided on a side surface of the processing chamber 100. The loading / unloading port is provided on each of the first transfer region 12 (see FIG. 1) side and the delivery station 21 (see FIG. 1) side.

[0051] The peeling device 5 includes a first holding unit 50, a moving unit 60, a second holding unit 70, a peeling induction unit 80, and a fluid supply unit 90, which are arranged inside a processing chamber 100.

[0052] The peeling device 5 suction-holds the upper wafer W1 side of the laminated substrate T from above using the first holding unit 50, and suction-holds the lower wafer W2 side of the laminated substrate T from below using the second holding unit 70. Then, the peeling device 5 moves the upper wafer W1 by the moving unit 60 in a direction away from the surface of the lower wafer W2.

[0053] As a result, the upper wafer W1 held by the first holding part is continuously peeled from the lower wafer W2 from one end to the other. Each component will be specifically described below.

[0054] The first holding unit 50 includes an elastic member 51 and a plurality of suction units 52. The elastic member 51 is a thin plate-like member made of metal such as sheet metal. The elastic member 51 is disposed above the upper wafer W1 and faces the upper wafer W1.

[0055] The plurality of suction portions 52 are provided on the surface of the elastic member 51 facing the upper wafer W1. Each suction portion 52 includes a main body portion 521 fixed to the elastic member 51 and a suction pad 522 provided below the main body portion 521.

[0056] Each suction unit 52 is connected to a suction device 524 such as a vacuum pump via a suction pipe 523. The first holding unit 50 suctions the non-bonding surface W1n (see FIG. 2) of the upper wafer W1 with the plurality of suction units 52 by the suction force generated by the suction device 524. As a result, the upper wafer W1 is suction-held by the first holding unit 50.

[0057] Note that the suction pad 522 provided in the suction unit 52 is preferably of a type that deforms little. This is because if the suction pad 522 deforms significantly when the moving unit 60, which will be described later, pulls the first holding unit 50, the suction pad 522 may deform significantly in the suctioned portion of the upper wafer W1, which may damage the upper wafer W1 or the lower wafer W2.

[0058] Specifically, it is preferable to use, as the suction pad 522, one having ribs on the suction surface, or a flat pad with a space height of 0.5 mm or less.

[0059] Here, the configuration of the first holding section 50 will be described in more detail with reference to Fig. 4. Fig. 4 is a schematic plan view of the first holding section 50 according to the embodiment.

[0060] 4, the plurality of suction portions 52 provided to the first holding unit 50 are arranged in a circular ring shape on the elastic member 51, face the outer periphery of the upper wafer W1, and respectively suction-hold the outer periphery of the upper wafer W1. Here, an example is shown in which eight suction portions 52 are provided on the elastic member 51, but the number of suction portions 52 provided on the elastic member 51 is not limited to eight.

[0061] Of these multiple suction portions 52, the suction portion 52 arranged closest to the peeling starting point (here, on the negative X-axis side) is arranged in a position close to the portion that is in contact with a blade portion 81 (see FIG. 3) of a peeling inducing portion 80 (see FIG. 3), which will be described later. In other words, the blade portion 81 of the peeling inducing portion 80 comes into contact with the side surface of the laminated substrate T near the suction portion 52 arranged on the negative X-axis side.

[0062] The elastic member 51 includes a main body 511 and an extension 512. The main body 511 is an annular frame having an outer diameter substantially equal to that of the upper wafer W1 and a hollow center. The suction portions 52 are arranged in an annular shape along the shape of the main body 511 on the lower surface of the main body 511, i.e., the surface facing the upper wafer W1.

[0063] The extension portion 512 is a portion of the outer periphery of the main body 511 that is located closest to the peeling starting point (here, the outer periphery on the negative X-axis side) and extends in the opposite direction to the peeling progression direction (the negative X-axis side). The support member 61 of the moving unit 60 is connected to the tip of the extension portion 512.

[0064] 3, the following describes other components of the peeling device 5. The moving unit 60 includes a support member 61, a moving mechanism 62, and a load cell 63.

[0065] The support member 61 is a member extending in the vertical direction (Z-axis direction), one end of which is connected to the extension portion 512 of the elastic member 51 (see Figure 4), and the other end of which is connected to the moving mechanism 62 via the upper base portion 103.

[0066] The movement mechanism 62 is fixed to the top of the upper base portion 103 and moves the support member 61 connected to the bottom in the vertical direction. The load cell 63 detects the load applied to the support member 61.

[0067] The moving unit 60 uses the moving mechanism 62 to move the support member 61 vertically upward, thereby pulling up the first holding unit 50 connected to the support member 61. At this time, the moving unit 60 can pull the first holding unit 50 while controlling the force applied to the upper wafer W1 based on the detection result of the load cell 63.

[0068] Here, as shown in Figure 4, the support member 61, which serves as the force point for lifting, is located on the opposite side of the adsorption portion 52, which serves as the fulcrum for lifting, in the direction of peeling, from the adsorption portion 52 which is located closest to the starting point of peeling (here, on the negative X-axis side).

[0069] 3 is generated on the side surface of the laminated substrate T, which is the point of action for pulling up (the portion that is the starting point of peeling). This allows the moving part 60 to pull the upper wafer W1 by flipping it up from its outer edge, thereby efficiently peeling the upper wafer W1 from the lower wafer W2.

[0070] The first holding unit 50 is supported by a moving unit 60, and the moving unit 60 is supported by an upper base unit 103. The upper base unit 103 is supported by a fixed member 101 attached to the ceiling of the processing chamber 100 via a support 102.

[0071] The second holding unit 70 is disposed below the first holding unit 50, and suction-holds the lower wafer W2 side of the laminated substrate T. The second holding unit 70 includes a disk-shaped main body 71 and a support member 72 that supports the main body 71.

[0072] The main body 71 is formed of a metal member such as aluminum. An adsorption surface 73 is provided on the upper surface of the main body 71. The adsorption surface 73 is a porous body, and is formed of a resin member such as PCTFE (polychlorotrifluoroethylene).

[0073] A suction space 74 is formed inside the main body 71, which is in communication with the outside via an adsorption surface 73. The suction space 74 is connected to an air suction device 712, such as a vacuum pump, via an air suction pipe 711. The second holding unit 70 uses the negative pressure generated by the air suction of the air suction device 712 to adsorb the non-bonding surface W2n (see FIG. 2) of the lower wafer W2 onto the adsorption surface 73, thereby adsorbing and holding the laminated substrate T.

[0074] The adsorption surface 73 of the main body 71 is formed to have a diameter substantially equal to that of the lower wafer W2. This makes it possible to prevent the fluid L (see FIG. 6) described below from being sucked from the adsorption surface 73 when the fluid L is supplied to the side surface of the laminated substrate T.

[0075] Furthermore, if non-suction portions such as grooves are formed on the suction surface for the lower wafer W2, cracks may occur in the lower wafer W2 at the non-suction portions. Therefore, the suction surface 73 of the main body 71 is made flat and does not have non-suction portions such as grooves. This makes it possible to prevent cracks from occurring in the lower wafer W2.

[0076] Furthermore, since the suction surface 73 is made of a resin material such as PCTFE, damage to the lower wafer W2 can be further reduced.

[0077] Furthermore, a groove-shaped drain 75 is provided on the outer circumferential side of the adsorption surface 73 in the main body 71. The drain 75 is connected to a drainage device 752 via a drainage pipe 751. This makes it possible to prevent the fluid L from overflowing from the main body 71 when the fluid L is supplied to the side surface of the laminated substrate T.

[0078] The second holding part 70 is supported by a rotary lifting mechanism 104 fixed to the floor of the processing chamber 100. The rotary lifting mechanism 104 is an example of a substrate rotating part, and rotates the second holding part 70 by rotating the support member 72 about a vertical axis. The rotary lifting mechanism 104 also moves the support member 72 in the vertical direction to raise and lower the second holding part 70.

[0079] A separation guide portion 80 is disposed outside the second holding portion 70. The separation guide portion 80 forms a portion on the side surface of the laminated substrate T that serves as a starting point for separation of the upper wafer W1 from the lower wafer W2.

[0080] The peeling inducer 80 includes a blade 81, a moving mechanism 82, and a lifting mechanism 83. The blade 81 is, for example, a flat blade, and is supported by the moving mechanism 82 so that the cutting edge protrudes toward the laminated substrate T.

[0081] The movement mechanism 82 moves the blade portion 81 along a rail extending in the X-axis direction. The lifting mechanism 83 is fixed to, for example, the upper base portion 103, and moves the movement mechanism 82 in the vertical direction. This adjusts the height position of the blade portion 81, i.e., the position at which it abuts against the side surface of the laminated substrate T.

[0082] The peeling inducer 80 adjusts the height position of the blade portion 81 using the lifting mechanism 83, and then moves the blade portion 81 in the horizontal direction (here, the positive direction of the X-axis) using the moving mechanism 82. Furthermore, the peeling inducer 80 brings the blade portion 81 into contact with the bonded portion between the upper wafer W1 and the lower wafer W2 that is exposed on the side surface of the laminated substrate T. This forms a portion on the laminated substrate T that serves as a starting point for peeling the upper wafer W1 from the lower wafer W2.

[0083] Furthermore, a fluid supply unit 90 is disposed outside the second holding unit 70. The fluid supply unit 90 supplies a fluid L containing water (H2O) to the side surface of the laminated substrate T. For example, the fluid supply unit 90 supplies the fluid L to a portion of the side surface of the laminated substrate T that is in contact with the blade portion 81 of the peeling inducing unit 80 and the vicinity thereof.

[0084] The fluid supply unit 90 has a nozzle 91 and a movement mechanism (not shown). The nozzle 91 ejects the fluid L. The movement mechanism is configured to be able to move the nozzle 91 in the vertical and horizontal directions.

[0085] <Details of peeling process> Next, the details of the peeling process by the peeling device 5 will be described with reference to Fig. 5 to Fig. 11. Fig. 5 is a flowchart showing the procedure of the peeling process executed by the peeling device 5 according to the embodiment. The peeling device 5 executes each procedure shown in Fig. 5 based on the control of the control unit 31 (see Fig. 1) of the control device 30 (see Fig. 1).

[0086] First, the control unit 31 loads the laminated substrate T into the processing chamber 100, and as shown in FIG. 6, holds the lower wafer W2 side of the laminated substrate T with the second holding unit 70, and holds the upper wafer W1 side of the laminated substrate T with the first holding unit 50 (step S101).

[0087] Next, the control unit 31 controls the fluid supply unit 90 to supply the fluid L to the side surface of the laminated substrate T (step S102). As a result, the control unit 31 brings the fluid L into contact with the side surface of the laminated substrate T held by the first holding unit 50 and the second holding unit 70, as shown in FIG.

[0088] In the process of step S102, the control unit 31 brings the fluid L into contact with the side surface of the laminated substrate T located near the adsorption unit 52 arranged on the negative side of the X-axis.

[0089] Next, as shown in FIG. 7, the control unit 31 controls the peeling inducement unit 80 to press the blade portion 81 against the side of the laminated substrate T that comes into contact with the fluid L, and insert the blade portion 81 into the joint between the upper wafer W1 and the lower wafer W2 in the laminated substrate T (step S103).

[0090] That is, in the process of step S103, the control unit 31 presses the blade portion 81 against the side surface of the laminated substrate T located near the suction portion 52 arranged on the negative side of the X axis.

[0091] 8 and 9, the effect of the fluid L when the upper wafer W1 is peeled off from the laminated substrate T using the blade portion 81 will be described. FIG. 8 is a diagram for explaining the change in the state of the bonded portion during the peeling process according to the embodiment.

[0092] 8(a), in the laminated substrate T according to the embodiment, the upper wafer W1 and the lower wafer W2 are bonded together by a siloxane bond (Si-O-Si). Meanwhile, when the blade 81 is inserted, stress is applied to the bonded portion, causing a reaction between water molecules (HO) contained in the fluid L and the siloxane bond, as shown in FIG. 8(b).

[0093] Then, as a result of the reaction between the siloxane bonds and water molecules at the bonded portion between the upper wafer W1 and the lower wafer W2, the siloxane bonds are broken as shown in FIG. 8(c), and the bond strength at the bonded portion is reduced.

[0094] FIG. 9 is a diagram showing the difference in bonding strength between when moisture is supplied to the laminated substrate T and when moisture is not supplied during the peeling process. In FIG. 9, the film types (SiCN, TEOS oxide film, ThO x (thermal oxide film)) and the type of plasma (O2, N2) used to pretreat the joining surfaces W1j and W2j during joining are also shown.

[0095] From the results shown in FIG. 9, it can be seen that the bonding strength during the peeling process is reduced by supplying the fluid L containing water to the laminated substrates T having bonding portions in various states.

[0096] Returning to the description of Fig. 5, the control unit 31 operates the moving unit 60 (see Fig. 3) (step S104) in parallel with the processing of step S103 described above. Specifically, as shown in Fig. 10, the control unit 31 moves a part of the outer periphery of the first holding unit 50, specifically, the extending portion 512 (see Fig. 4) of the elastic member 51, in a direction away from the second holding unit 70.

[0097] As a result, the suction portion 52 disposed near the portion into which the blade portion 81 is inserted is pulled upward, and the upper wafer W1 begins to peel off from the laminated substrate T starting from the portion into which the blade portion 81 is inserted.

[0098] 10, after the upper wafer W1 begins to peel from the laminated substrate T, the fluid L gradually permeates the inner side of the bonded portion between the upper wafer W1 and the lower wafer W2 due to capillary action. As a result, the chemical reaction shown in FIG. 8 also occurs at the inner side of the bonded portion, thereby reducing the bond strength at the inner side of the bonded portion.

[0099] Thereafter, the control unit 31 inserts the blade unit 81 into the joint between the upper wafer W1 and the lower wafer W2, and operates the moving unit 60 to further pull up the first holding unit 50. As a result, peeling progresses continuously from the end of the upper wafer W1 on the negative X-axis direction side toward the end on the positive X-axis direction side, and ultimately, the upper wafer W1 is peeled off from the laminated substrate T (see FIG. 10) as shown in FIG. 11. This completes the series of peeling processes.

[0100] As described above, in the embodiment, when the upper wafer W1 is peeled off from the laminated substrate T using the moving unit 60 and the blade unit 81, the fluid L containing water is brought into contact with the side surface of the laminated substrate T. This allows the peeling process to be performed while reducing the bonding strength between the upper wafer W1 and the lower wafer W2, thereby making the peeling process more efficient.

[0101] In the embodiment, the fluid L may be supplied from the nozzle 91 to the side surface of the laminated substrate T, and the blade portion 81 may be pressed against the side surface to which the fluid L has been supplied. This allows for accurate and efficient peeling even for laminated substrates T that are bonded by intermolecular forces and have a high bonding strength.

[0102] In the embodiment, the fluid L containing water is preferably a liquid. This allows the fluid L to gradually permeate deep into the bonded portion between the upper wafer W1 and the lower wafer W2 by capillary action. Therefore, according to the embodiment, the peeling process can be made more efficient.

[0103] In addition, in the embodiment, the fluid L containing water may be heated by a heating unit (not shown) of the fluid supply unit 90. This can promote the chemical reaction shown in Fig. 8 at the bonding portion between the upper wafer W1 and the lower wafer W2, thereby further reducing the bonding strength between the upper wafer W1 and the lower wafer W2.

[0104] Therefore, according to the embodiment, the peeling process can be made more efficient.

[0105] The fluid L according to the embodiment may be acidic, neutral, or alkaline. For example, when the upper wafer W1 and the lower wafer W2 are bonded by so-called Cu-Cu direct bonding, the fluid L can be controlled to be weakly alkaline (pH=about 7 to 8) to prevent the Cu located at the bonded portion from being altered by the fluid L.

[0106] <Various modified examples> Next, various modified examples of the embodiment will be described with reference to Figures 12 to 14. In the following various modified examples, the same parts as those in the embodiment will be denoted by the same reference numerals, and redundant description will be omitted.

[0107] 12 is an enlarged side view showing one step of a peeling process according to Modification 1 of the embodiment. As shown in Fig. 12, in Modification 1, when the blade portion 81 is pressed against the side surface of the laminated substrate T, the fluid L is supplied from the nozzle 91 to the side surface. That is, in Modification 1, the process of pressing the blade portion 81 against the side surface of the laminated substrate T and the process of supplying the fluid L from the nozzle 91 are performed simultaneously.

[0108] This also makes it possible to perform the delamination process while reducing the bonding strength between the upper wafer W1 and the lower wafer W2. Therefore, according to the first modification, the efficiency of the delamination process can be improved.

[0109] Furthermore, in Modification 1, since the fluid L is supplied at a dynamic pressure to the starting point of delamination, the fluid L can be effectively permeated to the deep side of the bonded portion between the upper wafer W1 and the lower wafer W2. Therefore, according to Modification 1, the bond strength between the upper wafer W1 and the lower wafer W2 can be further reduced, and the efficiency of the delamination process can be further improved.

[0110] Furthermore, in Modification 1, similarly to the embodiment, it is preferable that the fluid L containing water is heated by the heating unit of the fluid supply unit 90. This can promote the chemical reaction shown in Fig. 8 at the bonding portion between the upper wafer W1 and the lower wafer W2, thereby further reducing the bonding strength between the upper wafer W1 and the lower wafer W2.

[0111] Furthermore, in Modification 1, the fluid L may be liquid or water vapor. When the fluid L is water vapor, the chemical reaction shown in Fig. 8 can be further accelerated at the bonded portion between the upper wafer W1 and the lower wafer W2. Therefore, Modification 1 can further improve the efficiency of the peeling process.

[0112] 13 is a schematic plan view showing one step of the peeling process according to Modification 1 of the embodiment. As shown in Fig. 13, in Modification 1, the peeling process may be performed while pressing a plurality of blade portions 81 (two in the figure) against the laminated substrate T. This can further improve the efficiency of the peeling process.

[0113] 13, in Modification 1, the fluid L may be supplied to one blade portion 81 using a plurality of nozzles 91 (two in the figure). This allows the fluid L to be supplied sufficiently to the area to be peeled, thereby further improving the efficiency of the peeling process.

[0114] 13 shows an example in which two blade portions 81 are used, but the number of blade portions 81 may be three or more. Also, in the example in Fig. 13, an example in which two nozzles 91 are arranged for one blade portion 81 is shown, but three or more nozzles 91 may be arranged for one blade portion 81.

[0115] 14 is a schematic side view showing the configuration of a peeling device 5 according to Modification 2 of the embodiment. As shown in FIG. 14, Modification 2 differs from the embodiment in that a storage tank 92 is provided in a fluid supply unit 90.

[0116] The storage tank 92 is configured to be able to store the fluid L and to hold therein the laminated substrate T. In the second modification, the control unit 31 (see FIG. 1) performs a peeling process while immersing the laminated substrate T in the liquid fluid L stored in the storage tank 92.

[0117] This also makes it possible to perform the delamination process while reducing the bonding strength between the upper wafer W1 and the lower wafer W2. Therefore, according to the second modification, the efficiency of the delamination process can be improved.

[0118] In addition, in Modification 2, it is preferable that the fluid L containing water is heated by a heating unit of the fluid supply unit 90. This can promote the chemical reaction shown in Fig. 8 at the bonding portion between the upper wafer W1 and the lower wafer W2, thereby further reducing the bonding strength between the upper wafer W1 and the lower wafer W2.

[0119] The delamination apparatus 5 according to the embodiment includes a first holding unit 50, a second holding unit 70, a fluid supply unit 90, and a control unit 31. The first holding unit 50 holds the first substrate (upper wafer W1) of a laminated substrate T, which is formed by bonding a first substrate (upper wafer W1) and a second substrate (lower wafer W2), and moves the first substrate (upper wafer W1) in a direction away from the second substrate (lower wafer W2). The second holding unit 70 holds the second substrate (lower wafer W2) of the laminated substrate T. The fluid supply unit 90 supplies a fluid L containing water to the side surface of the laminated substrate T. The control unit 31 controls each unit. The control unit 31 holds the laminated substrate T with the first holding unit 50 and the second holding unit 70. The control unit 31 delaminates the first substrate (upper wafer W1) from the laminated substrate T, starting from the side surface, while the fluid supply unit 90 brings the fluid L containing water into contact with the side surface. This makes it possible to make the peeling process more efficient.

[0120] Furthermore, in the peeling device 5 according to this embodiment, the fluid supply unit 90 has a plurality of nozzles 91 that eject the water-containing fluid L. This can further improve the efficiency of the peeling process.

[0121] Furthermore, in the separation device 5 according to this embodiment, the fluid supply unit 90 has a reservoir 92 that stores the fluid L containing water, which is a liquid. This can improve the efficiency of the separation process.

[0122] Furthermore, in the separation device 5 according to this embodiment, the fluid supply unit 90 has a heating unit that heats the water-containing fluid L. This can further improve the efficiency of the separation process.

[0123] Moreover, the delamination apparatus 5 according to the embodiment further includes a substrate rotation unit (rotation and lifting mechanism 104) that rotates the second holding unit 70. This can further improve the efficiency of the delamination process.

[0124] Moreover, the delamination system 1 according to the embodiment includes a delamination device 5 and cleaning devices (first cleaning station 15, second cleaning station 22). The delamination device 5 delaminates the first substrate (upper wafer W1) from the laminated substrate T in which the first substrate (upper wafer W1) and the second substrate (lower wafer W2) are bonded together. The cleaning devices (first cleaning station 15, second cleaning station 22) clean the first substrate (upper wafer W1) and the second substrate (lower wafer W2) after delamination. The delamination device 5 has the above-described configuration. This makes it possible to improve the efficiency of the delamination process.

[0125] Moreover, the delamination method according to the embodiment includes a holding step (step S101) and a delamination step. The holding step (step S101) holds the laminated substrate T in which a first substrate (upper wafer W1) and a second substrate (lower wafer W2) are bonded together. The delamination step delaminates the first substrate (upper wafer W1) from the laminated substrate T, starting from the side surface of the laminated substrate T. The delamination step also includes a step (step S102) of bringing a fluid L containing water into contact with the side surface. This makes it possible to improve the efficiency of the delamination process.

[0126] In the peeling method according to the embodiment, the fluid L containing water is water vapor, which can further increase the efficiency of the peeling process.

[0127] In the peeling method according to the embodiment, the fluid L containing water is a liquid, which can further increase the efficiency of the peeling process.

[0128] Furthermore, in the peeling method according to the embodiment, the peeling step is performed while the fluid L containing water is being ejected from the multiple nozzles 91. This can further improve the efficiency of the peeling process.

[0129] Furthermore, in the peeling method according to the embodiment, the peeling step includes a supplying step (step S102) and a pressing step (step S103). In the supplying step (step S102), a fluid L containing water is supplied from a nozzle 91 to the side surface. In the pressing step (step S103), the blade portion 81 is pressed against the side surface to which the fluid L containing water has been supplied. This allows for accurate and efficient peeling even for laminated substrates T that are bonded by intermolecular forces and have a strong bonding strength.

[0130] In the peeling method according to the embodiment, the peeling step is performed by immersing the laminated substrate T in a fluid L containing stored water, thereby making it possible to improve the efficiency of the peeling process.

[0131] In addition, in the peeling method according to the embodiment, the fluid L containing water is heated, which can further increase the efficiency of the peeling process.

[0132] In addition, in the peeling method according to the embodiment, the first substrate (upper wafer W1) and the second substrate (lower wafer W2) are bonded by intermolecular forces in the laminated substrate T. This makes it possible to realize a laminated substrate T in which the upper wafer W1 and the lower wafer W2 are firmly bonded together.

[0133] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from the spirit of the present disclosure. For example, the above embodiments show an example in which the upper wafer W1 is peeled off from the laminated substrate T in which the upper wafer W1 and the lower wafer W2 are bonded by intermolecular forces, but the present disclosure is not limited to such an example.

[0134] For example, in the present disclosure, the lower wafer W2 may be peeled off from the laminated substrate T. Also, in the present disclosure, the upper wafer W1 or the lower wafer W2 may be peeled off from the laminated substrate T in which the upper wafer W1 and the lower wafer W2 are bonded together with an adhesive.

[0135] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0136] 1 Peeling System 5 Peeling device 15 First cleaning station (an example of a cleaning device) 22 Second cleaning station (an example of a cleaning device) 31 Control Unit 50 1st holding part 60 Moving Part 70 Second holding part 80 Peeling inducement part 81 Blade part 90 Fluid supply section 91 nozzles 92 Reservoir 104 Rotation and lifting mechanism (an example of a substrate rotation unit) T Polymer Substrate W1 Upper wafer (an example of the first substrate) W2 Lower wafer (an example of the second substrate)

Claims

1. a step of holding a laminated substrate in which a first substrate and a second substrate are bonded by a siloxane bond; peeling the first substrate from the laminated substrate starting from a side surface of the laminated substrate; Including, the peeling step includes a step of bringing a fluid containing water into contact with the side surface to cause a reaction between the siloxane bond and water molecules, thereby cleaving the siloxane bond; The water-containing fluid is water vapor. Peeling method.

2. a step of holding a laminated substrate in which a first substrate and a second substrate are bonded by a siloxane bond; peeling the first substrate from the laminated substrate starting from a side surface of the laminated substrate; Including, the peeling step includes a step of bringing a fluid containing water into contact with the side surface to cause a reaction between the siloxane bond and water molecules, thereby cleaving the siloxane bond; the water-containing fluid is a liquid, The peeling step is performed by immersing the laminated substrate in the stored fluid containing water. Peeling method.

3. a step of holding a laminated substrate in which a first substrate and a second substrate are bonded by a siloxane bond; peeling the first substrate from the laminated substrate starting from a side surface of the laminated substrate; Including, the peeling step includes a step of bringing a fluid containing water into contact with the side surface to cause a reaction between the siloxane bond and water molecules, thereby cleaving the siloxane bond; The water-containing fluid is heated. Peeling method.

4. The peeling step is performed while the fluid containing water is ejected from a plurality of nozzles. The peeling method according to any one of claims 1 to 3.

5. The peeling step includes: supplying the water-containing fluid to the side surface from a nozzle; and pressing a blade portion against the side surface to which the water-containing fluid is supplied. The peeling method according to any one of claims 1 to 4.

6. In the laminated substrate, the first substrate and the second substrate are bonded by intermolecular forces. The peeling method according to any one of claims 1 to 5.

7. a first holding unit that holds the first substrate of a laminated substrate in which a first substrate and a second substrate are bonded together by a siloxane bond and moves the first substrate in a direction away from the second substrate; a second holding portion that holds the second substrate of the laminated substrates; a fluid supply unit that supplies a fluid containing water to the side surface of the laminated substrate; a control unit that controls each unit; Equipped with The control unit The laminated substrate is held by the first holding part and the second holding part, the fluid containing water is brought into contact with the side surface by the fluid supply unit, and the siloxane bond is reacted with water molecules to break the siloxane bond, while peeling the first substrate from the laminated substrate starting from the side surface; The fluid supply unit has a reservoir tank that stores the fluid containing water. Peeling device.

8. a first holding unit that holds the first substrate of a laminated substrate in which a first substrate and a second substrate are bonded together by a siloxane bond and moves the first substrate in a direction away from the second substrate; a second holding portion that holds the second substrate of the laminated substrates; a fluid supply unit that supplies a fluid containing water to the side surface of the laminated substrate; a control unit that controls each unit; Equipped with The control unit The laminated substrate is held by the first holding part and the second holding part, the fluid containing water is brought into contact with the side surface by the fluid supply unit, and the siloxane bond is reacted with water molecules to break the siloxane bond, while peeling the first substrate from the laminated substrate starting from the side surface; The fluid supply unit has a heating unit that heats the fluid containing water. Peeling device.

9. a first holding unit that holds the first substrate of a laminated substrate in which a first substrate and a second substrate are bonded together by a siloxane bond and moves the first substrate in a direction away from the second substrate; a second holding portion that holds the second substrate of the laminated substrates; a fluid supply unit that supplies a fluid containing water to the side surface of the laminated substrate; a control unit that controls each unit; Equipped with The control unit The laminated substrate is held by the first holding part and the second holding part, the fluid containing water is brought into contact with the side surface by the fluid supply unit, and the siloxane bond is reacted with water molecules to break the siloxane bond, while peeling the first substrate from the laminated substrate starting from the side surface; The water-containing fluid is water vapor. Peeling device.

10. The fluid supply unit has a plurality of nozzles that eject the fluid including water. The peeling device according to claim 8 or 9.

11. The substrate holder further includes a substrate rotation unit that rotates the second holder. The peeling device according to any one of claims 7 to 10.

12. a peeling device configured to peel the first substrate from a laminated substrate in which the first substrate and the second substrate are bonded together by a siloxane bond; a cleaning device that cleans the first substrate and the second substrate after separation; Equipped with The peeling device is a first holding unit that holds the first substrate of a laminated substrate formed by bonding a first substrate and a second substrate and moves the first substrate in a direction away from the second substrate; a second holding portion that holds the second substrate of the laminated substrates; a substrate rotation unit that rotates the second holding unit; a fluid supply unit that supplies a fluid containing water to the side surface of the laminated substrate; a control unit that controls each unit; and The control unit The laminated substrate is held by the first holding part and the second holding part, the fluid containing water is brought into contact with the side surface by the fluid supply unit, and the siloxane bond is reacted with water molecules to break the siloxane bond, while peeling the first substrate from the laminated substrate starting from the side surface; The fluid supply unit has a reservoir tank that stores the fluid containing water. Peeling system.

13. a peeling device configured to peel the first substrate from a laminated substrate in which the first substrate and the second substrate are bonded together by a siloxane bond; a cleaning device that cleans the first substrate and the second substrate after separation; Equipped with The peeling device is a first holding unit that holds the first substrate of a laminated substrate formed by bonding a first substrate and a second substrate and moves the first substrate in a direction away from the second substrate; a second holding portion that holds the second substrate of the laminated substrates; a substrate rotation unit that rotates the second holding unit; a fluid supply unit that supplies a fluid containing water to the side surface of the laminated substrate; a control unit that controls each unit; and The control unit The laminated substrate is held by the first holding part and the second holding part, the fluid containing water is brought into contact with the side surface by the fluid supply unit, and the siloxane bond is reacted with water molecules to break the siloxane bond, while peeling the first substrate from the laminated substrate starting from the side surface; The fluid supply unit has a heating unit that heats the fluid containing water. Peeling system.

14. a peeling device configured to peel the first substrate from a laminated substrate in which the first substrate and the second substrate are bonded together by a siloxane bond; a cleaning device that cleans the first substrate and the second substrate after separation; Equipped with The peeling device is a first holding unit that holds the first substrate of a laminated substrate formed by bonding a first substrate and a second substrate and moves the first substrate in a direction away from the second substrate; a second holding portion that holds the second substrate of the laminated substrates; a substrate rotation unit that rotates the second holding unit; a fluid supply unit that supplies a fluid containing water to the side surface of the laminated substrate; a control unit that controls each unit; and The control unit The laminated substrate is held by the first holding part and the second holding part, the fluid containing water is brought into contact with the side surface by the fluid supply unit, and the siloxane bond is reacted with water molecules to break the siloxane bond, while peeling the first substrate from the laminated substrate starting from the side surface; The water-containing fluid is water vapor. Peeling system.

Images