A half-bridge module with an insulated junction surface between two transistor strip sections.

Abstract

The half-bridge module (M) has a support (T) having a conductor path layer. The conductor path layer has a first transistor strip section (LA), a second transistor strip section (HA), and an intermediate section (ZA), each extending along a first direction (R1). The intermediate section (ZA) is arranged between the first transistor strip section (LA) and the second transistor strip section (HA). In the intermediate section (ZA), a connection surface section (VF) of a first surface (F1) that also extends in the first transistor strip section (LA) extends. A bonding surface (P) insulated therefrom is provided alternately with the connection surface section (VF) in the first direction (R1).

Description

Technical Field

[0001] Vehicles equipped with an electric drive unit have an electric machine, and the windings of this electric machine are energized in a switchable manner. In order to often achieve a required output exceeding 100 kW, a high current often exceeding 100 A and an operating voltage often exceeding 100 V, particularly 800 V, are used. Therefore, for the switched energization of the windings, a power transistor that generates a switching edge with a high current stroke in a short time is used. In particular, in order to make the switching edge of the transistor shorter or to make the current rise rate faster, a transistor that switches extremely fast, such as a SiC transistor, is used. In order to be able to effectively use this type of transistor that switches extremely fast, a connection with extremely low inductance is required, and here, the signal propagation time should also be considered for a reliable connection circuit. The object of the present invention is to present a means for connecting a high-power transistor to a half-bridge in a low-inductance manner.

[0002] The above object is solved by the half-bridge module according to claim 1. Further characteristics, features, embodiments and advantages will become apparent from the dependent claims, the description and the drawings.

[0003] It is proposed to divide the conductor path layer of the support into two strip sections and an intermediate section located between these strip sections. These sections are strip-shaped and extend in the same direction. Thus, these strips are located overlapping each other vertically (viewed perpendicular to the longitudinal direction of the strips), and the intermediate section is located between the first strip sections. Two strip sections on either side of the intermediate section are provided for transistors that may be deposited there, for example, as bare dies (semiconductor components not housed). The presence of an insulated junction surface within the intermediate section results in a small overall inductance, and these junction surfaces, based on their proximity, allow for a direct and short connection to the first upper strip section, where output contact fields may be located, on the other hand, very close to the lower (second) strip section, thereby allowing contact points on the insulated junction surface to be very close to contact points on the second strip section. This provides a means of contact between the insulated junction surface and the lower second strip section, ensuring an extremely small area because the connection between these junction surfaces and the connection between the second strip section are directly adjacent. On the other hand, it is ensured that the current connection from the junction surface to the upper first strip section can also be extremely short, because the insulated junction surface similarly abuts against or is adjacent to the first (upper) strip section. Thus, the adjacency of the junction surface to the two strip sections results in a low-inductance connection. The first and second strip sections are provided on either side of the junction surface.

[0004] The first surface extends within the (upper) first strip section and preferably includes a connecting surface section that extends into an intermediate section to the (lower) second strip section. This allows for a direct, low-inductance connection of the potential of the first surface to the contact points in the (lower) second strip section. Based on the connecting surface section, the first surface is adjacent to the (lower) second strip section, thus enabling extremely short connections. The terms "lower" and "upper" refer to a plan view of a module, such as the one shown in Figure 1, where the longitudinal direction of the support or conductor path layer runs from left to right. The term "strip section" is also used as an abbreviation for "strip". These strips are aligned with one another, in particular, in a direction perpendicular to the first direction (i.e., perpendicular to the longitudinal direction).

[0005] Therefore, in the intermediate section, along the extension of the strip (i.e., along the first direction or longitudinal direction), connecting surface sections (particularly the portion of the first surface extending within the first strip) and insulated joint surfaces are alternately provided. The first surface and the insulated joint surfaces extending across the first strip section and the intermediate section are adjacent to the (lower) second strip section, but are electrically isolated from the (lower) second strip section, preferably via grooves in the conductor path layer. With respect to the connecting surface sections (i.e., portions of the first surface), this means very short connecting means to the second (lower) strip section, and with respect to the insulated joint surfaces, this means contact means located very close to the contact means of the second (lower) strip section. This allows the feeders to these contact points to be located very close to each other. Based on the narrow guidance of these feeders, low inductance is generated.

[0006] Finally, the connecting surface section of the first surface, which also extends into the (upper) first strip section, enables a contact point for the supply unit, which is substantially centrally located between the first and second strip sections. This allows the contact point for the supply unit to be positioned approximately equidistant from components such as transistors located within or on the strip sections. Approximately the same signal propagation time occurs for transistors in various strip sections. This ensures that switching edges formed by components on or within the first strip section reach the contact points on the connecting surface section almost simultaneously, as do switching edges formed within or on the second strip section. This avoids asymmetry during drive control, so that the control unit does not need to adapt the signal propagation time. Rather, the temporal symmetry with respect to the components of the two strips arises solely from the layout of the conductor path layers. The terminology used herein is particularly relevant to the depiction of Figure 1, which will be described in more detail in the description of the figures. The strip sections described herein are, in particular, capable of mounting transistors and are therefore also referred to as transistor strip sections.

[0007] The conductor path layer described herein has a layout comprising a first surface, a second surface, and an insulated joint surface. These three elements are separated from each other in the conductor path layer, and in particular, electrically separated by the structure of the conductor path layer. Thus, the surfaces of the conductor path layer are individualized, and the structure of the conductor path layer establishes the electrical isolation of the surfaces. The isolation of the surfaces can be established by etching, milling, or other structuring molding measures.

[0008] The conductor path layer is further geometrically divided into two strip sections and an intermediate section located between these strip sections. While the division into these sections is merely conceptual or functional, the surfaces in the conductor path layer are physically and, in particular, electrically separated from one another. The division into strips does not necessarily imply an electrical division, but it does not exclude an electrical division. The strip sections and the intermediate section are located directly adjacent to each other (in a direction perpendicular to the first direction). These sections preferably completely cover the support or the output area of ​​the support. In particular, these sections are aligned in a direction perpendicular to the first direction. Like these surfaces, these sections are with respect to the largest side of the support (i.e., in a plan view rather than a cross-sectional view). The conductor path layer is, in particular, the conductive outer layer of the support. The strip sections, in particular, each extend from the outer edge of the conductor path layer to the intermediate section. These outer edges extend along the first direction, in particular along the longest edge of the support. The strip section and intermediate section preferably extend from one side of the conductor path layer to the opposite side, and these sides are perpendicular to the outer edge. If the support is rectangular, these sides are the shorter side of the rectangle, and the outer edge is the longer side of the rectangle.

[0009] The first surface extends across the first strip section and also across the connecting surface section. These connecting surface sections intrude from the first strip section into the intermediate section and are particularly adjacent to the second strip section. The portions of the first surface and the connecting surface sections located within the first strip section are electrically connected to each other, preferably by integral formation or by electrical connecting elements. The first surface is electrically insulated from the second surface (by the structure of the conductor path layer) because the conductor path layer has a gap between them that extends through the entire thickness of the conductor path layer. This gap or resulting groove extends between the second surface and the connecting surface section.

[0010] The insulated joint surface is, on the one hand, surrounded by a joint surface section of the first surface (inside the intermediate section) and a portion of the first surface extending within the first strip section, and further surrounded by a portion of the second surface. The second surface may have an edge that extends substantially along the first direction (multiple strip sections or intermediate sections also extend along the first direction). The first surface and the joint surface are close to this edge (except for electrically separating grooves). An edge parallel to this may correspond to an outer edge.

[0011] The connection surface section and the insulated joint surface are close to the second surface. However, the connection surface section and the insulated joint surface are electrically insulated from the second surface by structures within the conductor path layer. Between the first surface, the second surface, and the joint surface, the conductor path layer has insulating structures that extend throughout the entire thickness of the conductor path layer. These structures are preferably recesses, such as gaps or grooves. The gaps that result between these surfaces correspond to the minimum creep sections, thereby ensuring that these surfaces are sufficiently insulated from one another.

[0012] The first surface, the second surface, and the joint surface extend within the same conductor path layer. Therefore, the conductor path layer is structured only by grooves separating the second surface from the first surface and the joint surface, and by grooves separating the insulated joint surface from the first surface. In particular, along the first direction, the joint surface and the connection surface section may be repeated multiple times in succession, thereby enabling symmetric connection with respect to propagation time. This ensures, in particular, that the components on the first surface and the components on the second surface are similarly contact-connected in terms of electrical aspects (i.e., in terms of the inductance covering of the connection, and in terms of propagation time and the resistance of the connection).

[0013] One side of the conductor path layer preferably forms the outside of the support. In other words, the conductor path layer preferably forms the upper or lower side of the support, rather than being an intermediate layer in a multilayer support. The support further has an insulating layer on which the conductor path layer is laminated. The conductor path layer is particularly a metal layer, for example, a layer made of copper or a copper material, or a layer made of aluminum or an aluminum material. The insulator may be a plastic, a plastic composite material, or preferably a ceramic insulator. The support may be formed, for example, as a circuit board, for example, as a printed circuit board, a DCB circuit board, or an IMS circuit board. The support may be formed as a single layer, in which case the layer is formed by the conductor path layer, or the support may be formed as a multilayer, in which case one of the two layers is formed by the conductor path layer. Other conductive layers may be provided on the inside of the support, in which case the conductor path layer is the outer layer of the support. The outer layer may have an insulating coating. This coating is removed in areas where contact points or components for supply lines are to be mounted.

[0014] The conductor path layers are structured and formed, i.e., they form conductor path structures. These conductor path structures include a first face, a second face, and / or an insulated joint face, as described herein. In particular, the conductor path layers extend within a single plane. In a single-layer configuration of the support, the support can be connected to a cooler on the side opposite to the conductor path layer. The insulating layer of the support may be connected to the cooler, or the conductive layer of the support may be connected to the cooler, with the conductor path layer provided on the opposite side of this conductive layer. Half-bridge modules may be provided mounted or unmounted.

[0015] The support is used, in particular, inside a half-bridge module. A (mounted) half-bridge module has multiple high-side transistors connected in parallel to each other and multiple low-side transistors connected in parallel. The high-side transistors are connected in series to the low-side transistors via a connection point. While the connection point can be used as a phase terminal or load terminal, the two ends of this series connection can be connected to a supply voltage, i.e., two supply potentials. The high-side transistors can be arranged in (or on) a second strip section using this configuration, while the low-side transistors can be arranged on (or on) a first strip section, preferably within the first strip section. Since the two strip sections described above are suitable for transistor placement, these strips are also referred to as transistor strips.

[0016] The support may be rectangular, in which case the longer side corresponds to the first direction, along which the strip section extends. Laterally to this, the first strip section, the intermediate section, and the second strip section are located side by side. The support may further have an output section in which the strip section and the intermediate section are located, and may have at least one other section for, for example, bonding technology, filters, control units, etc. However, preferably the support is closed by the edges of two strip sections. These strip sections are located on opposite sides of each other, in which case an edge perpendicular to them closes the strip section and the intermediate section in the longitudinal direction. The first direction preferably extends along the longer edge of the rectangle of the support, but may extend along the shorter edge of the rectangle of the support.

[0017] Therefore, a half-bridge module is proposed, comprising a support having a conductor path layer. The support is laminated in particular on an insulating layer and has an uncovered surface (upper side) opposite to the side (lower side) of the conductor path layer adjacent to the insulating layer. The conductor path layer has three sections in the form of strips. Each of these strips extends along a first direction. These strips extend parallel to each other in this direction. The conductor path layer has a first transistor strip section, a second transistor strip section, and an intermediate section (which, like the other two strip sections, has the shape of a strip and can therefore also be called an intermediate strip section). The shape of the strip sections is particularly rectangular, and the length of each rectangle corresponds to the length of the conductor path layer, and the width of the conductor path layer is formed by the sum of the width of each strip section and the width of the intermediate section.

[0018] The conductor path layer is structured and formed according to the layout as described above. The intermediate section is located between the first transistor strip section and the second transistor strip section. Thus, there are rows, i.e., the first transistor strip section, the intermediate section and the second transistor strip section, in a direction lateral to the first direction, i.e., along the width of the conductor path layer. These sections are particularly related to the plane over which the conductor path layer extends; that is, these strips extend on the same plane or the same surface. These strip sections and intermediate sections preferably fill the conductor path layer mostly or completely. These strip sections and intermediate sections are functional divisions of the conductor path layer, not necessarily electrical divisions. In particular, there is a first plane that extends both within the first strip section and within the intermediate section, and there is no electrical division between the surface subregion extending within the intermediate section and the surface subregion extending within the first strip section.

[0019] A connecting surface section of the first surface extends within the intermediate section. This first surface also extends within the first transistor strip section. The connecting surface section is electrically connected to the surface extending within the first strip section. Preferably, the first strip section is substantially completely or at least largely filled by the first surface, and in the intermediate section, only a portion of the intermediate section is covered by the first surface (and forms a connecting surface section).

[0020] Further insulated joint surfaces are located in the intermediate section. These insulated joint surfaces are filled in, as are the sub-regions of the intermediate section. However, these sub-regions do not overlap with the connection surface section. In particular, the connection surface section is electrically isolated from the joint surface. The electrical isolation or insulation between the joint surface and the connection surface section is with respect to the conductor path layer, which may have a separating structure within the conductor path layer for electrical isolation. In other words, the joint surface is isolated from the connection surface section by the fact that the surfaces of the conductor path layer forming the joint surface are separated from the connection surface section within the conductor path layer. However, this does not necessarily mean that these two surfaces are electrically connectable to each other outside the conductor path layer, or indirectly connectable through components, for example. Therefore, the joint surface is isolated from the connection surface section so that the conductor path layer itself does not form a connection between these two surfaces or surface sections. The insulation of the joint surface from the connection surface section is achieved by material separation in the conductor path layer, for example, by providing a groove between the joint surface and the connection surface section. Similarly, the second surface (of the same conductor layer) may be separated from both the connecting surface section and the joint surface in the second strip section.

[0021] In the intermediate section, insulated joint surfaces and connection surface sections are alternately provided along a first direction. The first direction extends along the longitudinal direction of the strip section, or along the longitudinal direction of the conductor path layer or support, or along the longitudinal direction of the intermediate section. This first direction is perpendicular to the second direction. The first and second directions are the directions in which the conductor path layer extends planarly. The two directions are perpendicular to the extension of the thickness of the conductor path layer.

[0022] Along the second direction, the first strip section, the intermediate section, and the second strip section are located side by side. In other words, in the second direction, the region of the first surface located within the first strip section, the connecting surface sections and joining surfaces arranged alternately in the first direction, and thirdly, the second surface or the second strip section are located side by side. Since the connecting surface sections and joining surfaces are arranged alternately in the first direction (and inside the intermediate section), in particular, in the first longitudinal position, the first strip section, the connecting surface section, and the second strip section are located side by side, and in the second longitudinal position, the first strip section, joining surface, and the second strip section are located side by side. In a first cross section perpendicular to the first direction, the first surface (including the connecting surface section) may be adjacent to the second surface, and in a second cross section perpendicular to the first direction, the first surface, joining surface, and the second surface are located side by side. The first and second cross-sections are in different positions in the first direction (i.e., the longitudinal direction).

[0023] Preferably, the connection surface section is adjacent to the second transistor strip section. The second surface of the conductor path layer, extending largely or substantially entirely into the second strip section, is electrically isolated from the connection surface section (belonging to the first surface). These junction surfaces are preferably also adjacent to the first transistor strip section, but preferably electrically isolated from the first surface extending within the first strip section (in particular). The junction surfaces are electrically isolated from the connection surface section inside the conductor path layer. The surfaces referred to herein are, in particular, the conductive surfaces of the conductive layer formed by the conductor path layer. These sections do not necessarily need to be understood as electrically isolated subregions of the conductor path layer with respect to the geometric division of the conductor path layer. While the first surface extends within the first strip section and (as a connecting surface section) within the intermediate section (thus creating a connection between the surface regions of different strips), the second surface extends within the second strip section, thereby separating the surface within the second strip section from the intermediate section and the first strip section inside the conductor path layer. The surface inside the first strip section and the surface within the intermediate section are provided separately from the surface within the second strip section. This separation is achieved by separation structures within the conductor path layer.

[0024] The connecting surface section or the first surface and / or junction surface is adjacent to the second transistor strip section but is not electrically connected (using the conductor path layer) to the second surface located within the second strip section. The junction surface is particularly adjacent to the second strip section but is not electrically connected (using the conductor path layer) to the second surface located within the second strip section. The junction surface is preferably electrically separated by the conductor path layer from the first surface, particularly the portion of the first surface located within the first strip section, and from the connecting surface section. The conductor path layer can exert an insulating effect by having a separating structure such as a conductor path or pad, or a recess between the surfaces to be separated. The conductor path layer exerts an insulating effect in particular by having grooves or recesses that extend throughout the entire thickness of the conductor path layer. These grooves or gaps or recesses establish material separation between the surfaces, surface sections, or surface sub-regions of the conductor path layer. However, since the support includes at least one insulating layer on which the conductor layer is attached, a mechanical connection occurs despite the physical separation within the conductor layer (although this mechanical connection is electrically insulated).

[0025] The connection surface section preferably widens toward the second transistor strip section. In other words, the proportion of the first surface forming the connection surface section widens toward the second transistor strip section. Therefore, this widening occurs along the second direction or perpendicular to the first direction, and in particular in the plane of the conductor path layer. Alternatively, or in combination with this, the connection surface tapers toward the second transistor strip section. Here, the decreasing width is referred to as taper. This taper or decreasing width also relates to the extension along the second direction. The widening or taper relates to the longitudinal dimension of the surface or section in question, i.e., along the first direction. Alternatively, the width of the connection surface section may not change or may decrease toward the second strip section from the first strip section. Similarly, the connection surface may widen toward the second strip section from the first strip section, or its width may not change. Width, here again, is considered to be the longitudinal dimension (=first direction). As an alternative possibility, the joint surface may be assumed to have a wider width at locations where it is adjacent to the first strip section than at locations or edges adjacent to the second surface or second strip section. Between these locations, the extension may be discontinuous, or there may be tapering and widening. Furthermore, the width of the joint surface section is preferably narrower at locations where it is adjacent to the first strip section than at edges adjacent to the second strip section or second surface. The thickness of the conductor path layer is preferably constant (except where the conductor path layer has a recess).

[0026] The joint surface may have multiple connection points in the region adjacent to the first strip section. From each connection point, at least one connector may extend into the first strip section, preferably extending to a mounting surface for a component or to the component itself. Furthermore, the joint surface may have connecting points, which in particular include joint elements and are configured to make contact connections for supply potential. Furthermore, the joint surface section may have multiple connection points in the region of the joint surface section adjacent to the second strip section. From each connection point, at least one connector may extend into the second strip section, particularly extending to a mounting surface for a component or to the component itself. If multiple connectors extend from one connection point, these connectors may be connected to multiple components in one of the multiple strip sections, or may lead to multiple mounting surfaces in the relevant strip section. Furthermore, multiple connectors extending away from the same connection point may be connected to the same component in one of the multiple strip sections, or may lead to the same mounting surface, thereby increasing the current support capacity. Multiple connection groups may extend outward from at least one joint surface and / or at least one connection surface section, each group having multiple connection bodies provided for connecting the same components or extending toward the same mounting surface.

[0027] The first surface and / or the second surface are preferably continuous surfaces. In particular, a portion of the first surface extending within the first strip section is continuous (or at least directly electrically connected) with the connecting surface section. This portion of the first surface extending within the first strip section is, in particular, formed as a continuous strip, and in particular as a continuous strip along a first direction (and also along a second direction).

[0028] The connecting surface sections, which may also be considered as the first surface, are not continuous in the first direction and are arranged alternately with the bonding surfaces. Starting from a portion of the first surface extending within the first strip section, i.e., from a continuous strip, these connecting surface sections extend toward the second transistor strip section. The connecting surface sections extend particularly to the second surface. That is, the connecting surface sections have edges (which may extend along the first direction) that are located opposite to the second surface or the second strip section. Particularly in the conductor path layer, a groove (or another separation structure) is located between the edge of the connecting surface section pointing toward the second surface or the second strip section and the second strip section or the second surface itself. The second surface may have edges that are located opposite to this edge of the connecting surface section. The edges of the bonding surfaces located on the side of the second surface or the second strip section also preferably extend substantially along the first direction. By forming a connection surface section and a portion of the first surface extending within the first strip section in a continuous manner, particularly easy electrical connection of a contact element or connecting element in the connection surface section with a component in the first strip section becomes possible.

[0029] The second strip section has a second surface. This second surface is formed conductively, for example, from a copper material, an aluminum material, or another conductive material. The second surface is formed as a continuous surface in a first direction. The second surface is insulated from the first surface, that is, in particular from the connection surface section and also from the bonding surface (using a separation structure within the conductor path layer). Preferably, a groove extending preferably through the entire thickness of the conductor path layer is located between the second surface on one hand and the connection surface section and the bonding surface of the first surface on the other hand. The second surface may have a mounting surface for transistors. These transistors or the belonging mounting surfaces are preferably juxtaposed along the first direction. These transistors may extend along one or more rows along the first direction. These rows extend along the first direction. Mounting surfaces that are offset from each other perpendicularly to the first direction may occur, in particular periodically or alternately. This occurs especially when the mounting surfaces are arranged in a plurality of rows (parallel rows) along the first direction. Thus, these mounting surfaces are positioned side by side along the first direction on the second surface, in particular side by side along one or more rows. These rows extend along the first direction. Embodiments of a half-bridge module having mounting surfaces are in particular non-mounted half-bridge modules, where here the arrangement of the mounting surfaces on the second surface already ensures that the spacing from the bonding surface and the connection surface section is small, thereby resulting in a low-inductance layout. The mounting surfaces are in particular configured for mounting SMD components such as transistors.

[0030] The first surface preferably has the same mounting surface in the first strip section. The mounting surface thereof is suitable for the mounting surface for transistors as described above, i.e., it is formed for the SMD mounting of bare die transistors or for the mounting of transistors based on another connection technology. The mounting surfaces are positioned side by side along the first direction. Similar to the above-described mounting surfaces, these mounting surfaces are spaced apart from each other and positioned side by side along the first direction and are not directly adjacent to each other. These mounting surfaces can be arranged in one or more rows extending along the first direction. In other words, these mounting surfaces may be provided at different heights with respect to the direction perpendicular to the first direction, i.e., they may have alternating different intervals with respect to the center line along the first direction. The half-bridge module with such mounting surfaces is not particularly mounted. The mounting surface is formed for high-current applications, i.e., for continuous currents of at least 10 A or at least 100 A. This also applies to the transistors in the mounted module.

[0031] A connection surface section of the first surface extending from the first strip section to the second strip section (and thus extending within the intermediate section) results in a very low-resistance connection that can be manufactured at low cost. Furthermore, the above-described arrangement of the mounting surfaces in the first strip section automatically results in short connection sections to the bonding surface (located in the intermediate section), whereby the connection to the first surface or to components or bonding elements on the bonding surface can be realized with low inductance.

[0032] Preferably, groups of joining elements are provided on the first surface, on the joining surface, and within the second strip section (i.e., on the second surface). These groups of joining elements provided on the first surface are preferably located within the first strip section and therefore along a strip of the first surface that extends continuously in the first direction. Each group of joining elements preferably has multiple joining elements that are spaced apart from one another along the first direction. A single group may have multiple subgroups of joining elements, each of which is spaced apart from one another along a row in the direction of the first direction, but these rows are offset from one another perpendicular to the first direction. These joining elements may be formed as sintered pads, contact surfaces, soldering pads, weld surfaces, joining pins, joining metal strips, or mounting holes. In particular, the joining elements have planar sections that extend over the conductor path surface, thereby forming a planar connection to the conductor path layer. Joint pins are often provided, which are, for example, press-fitted into the conductor surface or attached to the conductor surface (for example, by welding, such as friction welding, soldering, or sintering). The joint element is conductive. Preferably, a supply line, particularly a joining metal sheet, is used, and the supply line has end sections attached planarly to the conductor surface. Preferably, multiple end sections or contact points are provided for each first surface, each second surface, and joint surface, thereby distributing the connection of the supply line. Contact points belonging to the same potential are preferably located side by side (spaced apart) along the first direction. In one example, the joint element is formed as a mounting hole, thereby enabling joining using, for example, screw connections, press-fit pin connections, or groove connections.

[0033] A group of junction elements preferably refers to elements that are electrically connected to one another via a conductor path layer and are located side by side or extending in a first direction. When a second strip section or second plane is provided for a positive DC voltage supply potential and a junction plane is provided for a negative DC voltage supply potential, low inductance is generated only in the vicinity of the relevant junction elements. In particular, the junction elements on the first plane may be associated with the phase potential, in which case a phase junction plane is formed on the first plane on one side, and junction elements on the second strip section and junction plane are formed on the other side, and these are associated with the DC voltage supply potential. In this way, coupling between the clock-controlled signal at the phase potential and the potential of the supply voltage can be blocked or reduced. The junction elements at the phase potential are preferably located outside the region extending from the junction elements at the first supply potential to the junction elements at the second supply potential.

[0034] Semiconductor modules with bonding surfaces are not preferably mounted. However, this arrangement of bonding surfaces provides low-inductance connecting means and a generally low-inductance layout, as described above.

[0035] In one embodiment, a group of junction elements located on the first plane is assumed to be situated within an intermediate section. In other words, in this embodiment, the group of junction elements located on the first plane is situated on a connection surface section. This provides a current path for these junction elements toward the mounting surface on the first plane, and this current path has approximately the same length as the current path toward the mounting surface (for transistors) on the second plane. Based on this symmetry, improved signal characteristics occur, particularly for fast-rising edges, and with respect to the resistance of the mounting surface / transistor connection. In one embodiment, a group of junction elements located on the first plane is assumed to be situated midway between the row of mounting surfaces in the first strip section and the row of mounting surfaces in the second strip section. This deviation from the center is preferably 20 mm or less, 15 mm or less, 10 mm or less, or 5 mm or less.

[0036] Preferably, first connectors originate from these joint surfaces. These first connectors particularly extend into a first strip section. These connectors are preferably located above the support or above the conductor path layer. These connectors originate from a region of the joint surface facing the first strip section. These connectors extend into the first strip section, where they may be connected to a contact surface. These contact surfaces may be parts of the first surface, or they may be formed for the use of the components. In particular, the ends of the connectors opposite the joint surface are formed to be materially connected to the contact surfaces of the components. From the joint surface, first connectors may originate and extend into the first strip section (or across half the space above it), or multiple connectors may be connected to the same joint surface and extend to various points in the first strip section. This allows multiple elements in the strip section to be connected to the same joint surface.

[0037] In further embodiments, the half-bridge module is envisioned to have a second connector connected to a connecting surface section. The second connector extends from these connecting surface sections across the support into a second strip section. In this case, the second connector starts from the connecting surface section and extends into the second strip section in the upper half of the space above the support or conductor path layer. The second connector has ends located opposite the connecting surface section, and these ends are formed to connect to elements in the second strip section, for example, to contact points in the strip section, or preferably to contact surfaces formed to connect components within the second strip section, such as the metallized surface of a component. Multiple second connectors may extend away from the connecting surface section into the second strip section.

[0038] The connectors are formed in particular as bonding wires or bonding strips and may be manufactured from conductive materials such as copper or aluminum. In particular, the second connector is connected to the connection surface section in a region adjacent to the second strip section. These connectors may be formed as a single unit or in multiple parts and may include end contact elements and conductors connecting these end contact elements to each other. The end contact elements may be formed, for example, as pins, screw elements or bonding metal strips, or as conductor ends bonded thereon.

[0039] The half-bridge module may be provided as a partially mounted, mounted, or unmounted module. In particular, the half-bridge module may have surface-mount components mounted on it, i.e., SMD components. The half-bridge module may be provided as a mounted half-bridge module comprising a first transistor and a second transistor. The first transistor may be mounted on a first face of the conductor path layer located within a first strip section. In other words, the first transistor is located on a plane section of the first face located within the first strip section, i.e., it is provided on a plane section of the first face located in a section where this plane section is continuous along a first direction. The second transistor may be mounted on a second face extending within a second strip section. In the case of an unmounted half-bridge module, these strip sections are provided for mounting transistors, and in the case of a mounted half-bridge module, transistors are mounted on these strip sections, so these strip sections can also be referred to as the first transistor strip section and the second transistor strip section. In addition to mounting using SMD technology, mounting is also possible using plug-in or embedded technology.

[0040] Each of these transistors has a first output path contact surface facing the conductor path. The first output path contact surface is connected to the first surface. These contact surfaces are the contact surfaces of the transistor and are therefore connected to the emitter, collector, source, or drain of the transistor. The transistor further has a second output path contact surface opposite to the first contact surface. Therefore, the second contact surface is accessible from above in the case of a mounted transistor, and in particular forms the surface above the conductor path layer. However, the first contact surface is not accessible from above in the case of a mounted transistor because the first contact surface faces the conductor path layer and is therefore covered by the transistor itself.

[0041] The second output path contact surface is similarly a contact surface connected to the collector, emitter, drain, or source of the transistor. The first and second contact surfaces are connected to various electrodes of the transistor. Thus, the first contact surface may be connected to the collector and the second contact surface to the emitter, or vice versa. The first contact surface may be connected to the source of the transistor and the second contact surface to the drain, or vice versa.

[0042] The connection of the second contact surface is provided via a connector, particularly via a connector as described herein. The second contact surface of the first transistor, located on the first surface, is connected to the junction surface (in the intermediate section of the conductor path layer). The second contact surface of the second transistor is connected to the connection surface section. This connection is direct, and in particular, is made via the first and second connectors. The connectors extend across the support. The first connector connecting the junction surface to the contact surface of the first transistor extends from the junction surface into the first strip section, particularly over the contact surface of the first transistor. The connector connected to the connection surface section extends to the contact surface of the second transistor, which is connected in the second strip section. These connectors create a conductive connection between the contact surface of the transistor and the junction surface or the connection surface section. These connectors may be directly adjacent to the contact surface, or a connecting layer, such as a sintered layer, a solder intermediary layer, and / or a conductive buffer layer for reducing mechanical stress, may be located between the contact surface and the connector. The aforementioned contact surface (=metallized surface) is the output path contact surface.

[0043] The transistor may further have a signal contact surface as so herein refers. Preferably, the mounted half-bridge module has a half-bridge formed by low-side transistor elements, high-side transistor elements, and internal connections between these transistor elements. Each transistor element of the half-bridge is preferably formed by a plurality of transistors connected in parallel. The parallel connection of transistors multiplies the current-supporting capacity of the resulting transistor elements several times. The internal connection includes a first surface or at least a portion of the first surface. The internal connection is made in particular through a connection surface section. The internal connection may further have a connector, in particular a connector extending from the connection surface section into a second strip section.

[0044] In the embodiment, the internal connection between transistor elements extends from the first contact surface of the first transistor to the first surface, particularly to a section of the first surface extending within the first strip section, from which the first surface is further guided to a connection surface section. The internal connection is further guided by a connector that leads from the connection surface section (i.e., the first surface) to the second contact surface of the second transistor. Thus, starting from the first transistor or the contact surface of the first transistor, the portion of the internal connection extends along a section of the first surface located within the first strip section, and from there, the internal connection is further guided through a connection surface section that also belongs to the first surface and is located in an intermediate section.

[0045] The connection surface section abuts against the second surface or second strip section, resulting in a short distance for the connector that further guides the inner connection from the connection surface section to the second transistor. The inner connection may further have connecting elements located on the contact surface of the transistor, such as a solder layer, a solder intermediary layer, a sintered layer, and / or a conductive buffer layer for reducing mechanical stress. The first and second transistors are located on a strip section with an intermediate section between them, but the connection surface section protruding from the first strip section to the second strip section creates a short, well-conductive connection (the inner connection portion) provided by the conductive path layer.

[0046] The two opposite ends of the half-bridge are preferably realized one by a junction surface and the other by a second surface (in the second strip section). The junction surface and the second surface may each have output contact fields (or other junction elements) to which, for example, a supply DC voltage can be applied. In particular, in this case, the junction surface forms a terminal for a negative supply potential, and the second surface forms a terminal for a negative DC voltage supply potential. An output contact field provided on the junction surface may form a negative terminal for the half-bridge. An output contact field provided on the second surface may form a positive terminal for the half-bridge. An output contact field provided on the first surface may form a phase terminal for the half-bridge (and may be connected to their internal connections).

[0047] The first surface may be formed as a connection point or a terminal for phase potential or AC potential. In particular, the first surface can be used as a load terminal.

[0048] Each transistor may have at least one signal contact surface. The signal contact surface of the first transistor is preferably located on the side of the transistor opposite the intermediate section, i.e., facing the longitudinal edge outward (with respect to the first direction). The signal contact surface of the second transistor is preferably located on the side of the second transistor opposite the intermediate section, i.e., facing the second longitudinal edge opposite the first longitudinal edge. This allows the signal contact surfaces to be connected to the outside at a short distance. The signal contact surfaces are, in particular, control signal contact surfaces, such as gate contacts or base contacts. Furthermore, the signal contact surfaces can be used as monitoring signal terminals, for example, temperature signal terminals or current measurement terminals.

[0049] The half-bridge module may further have filter circuits (in an unmounted, partially mounted, or fully mounted configuration). In particular, the half-bridge module may be equipped with a filter circuit that shorts high-frequency signal components. The filter circuit may be formed as a snubber filter. The filter circuit may be located within a second transistor strip section, particularly on the second surface. Furthermore, the filter circuit may be located on the junction surface. Furthermore, a filter circuit may be provided which has at least one component on the second surface or within the second strip section, and at least one component on the junction surface (or connection surface section).

[0050] A half-bridge module is, in particular, a half-bridge module of an inverter module, and an inverter module comprises multiple half-bridge modules. The inverter module may be formed as a vehicle traction inverter. A half-bridge module is, in particular, a high-voltage module having a nominal voltage greater than 60V or at least 200V, 400V, or 800V. Furthermore, a vehicle-side charging circuit may be provided with a power factor correction filter having at least one of these half-bridge modules. Finally, a vehicle-side clock-controlled DC voltage converter may be provided, whose working switch is driven by a half-bridge module. [Brief explanation of the drawing]

[0051] [Figure 1] This is a diagram illustrating in more detail an exemplary embodiment of a half-bridge module. [Figure 2a] This is a diagram illustrating in more detail an exemplary embodiment of a half-bridge module. [Figure 2b] This is a diagram illustrating in more detail an exemplary embodiment of a half-bridge module. [Figure 2c] This is a diagram illustrating in more detail an exemplary embodiment of a half-bridge module. [Figure 3] This is a diagram illustrating in more detail an exemplary embodiment of a half-bridge module.

[0052] Figure 1 schematically shows a plan view of a half-bridge module M comprising a support T on which a conductor path layer is located. The conductor path layer is structured into multiple planes F1 and F2, i.e., divided from an electrical perspective, and for a more detailed explanation, it is hereafter divided geometrically or functionally into multiple sections LA, ZA, and HA.

[0053] The sections used for the geometric division of the conductor path layer are a first strip section LA, a second strip section HA, and an intermediate section located between these strip sections. In the illustrated example, these strip sections are directly adjacent to the intermediate section. Thus, the illustrated surface or the entire conductor path layer is divided into two strip sections and an intermediate section, with reference designations LA, HA, and ZA. The intermediate section ZA also has a strip shape. These sections are aligned with respect to each other perpendicular to the first direction R1.

[0054] The strip sections LA, HA and intermediate section ZA are shown as (rectangular) strips extending along a first direction R1 in their relatively long dimensions. Perpendicular to direction R1, in the figure plane, a second direction extends, and the first strip section LA, intermediate section ZA, and second strip section HA are located side by side along this second direction (in this order). Direction R1 extends along the length of the illustrated rectangular support, while direction R2 extends in width (i.e., along the shorter dimension of the rectangle). The overall face or upper side of the support is divided into sections LA, HA, and ZA. A support may be provided having an output region divided into sections LA, ZA, and HA, in addition to at least one other region.

[0055] The first surface F1 extends on the one hand into the first strip section LA, in which case surface F1 almost completely fills this strip section in Figure 1. Surface F1 further extends into the intermediate section ZA, forming a connecting surface section VF. The first surface is continuous within the first strip section (particularly in direction R1), whereas the first surface is repeatedly interrupted in direction R within the intermediate section ZA (by an insulated connecting surface P). Thus, multiple connecting surface sections VF are created that belong to the first surface F1 and branch off from the continuous surface region of surface F1 in the first strip section. In other embodiments, a first surface consisting of two parts is envisioned, comprising a first part in section LA and a second part in section ZA (which is the connecting surface section VF), the first and second parts being connected by a connecting element, but both belonging to the same conductor path surface.

[0056] Within the intermediate section ZA, a junction surface P extends further, and the junction surface P is electrically isolated from the first surface (i.e., from the connection surface section VF) (i.e., it can take on a different potential). In Figure 1, the junction surface P alternates with the connection surface section VF along direction R1. The connection surface section VF extends from the first strip section LA toward the second strip section HA and is adjacent to the second strip section HA. The junction surface P also extends in the intermediate section ZA from the first strip section LA toward the second strip section HA (and is electrically isolated by the surface F2 within the intermediate section ZA on the conductor path surface). The extension of the junction surface P in the intermediate section ZA from the first strip section LA toward the second strip section HA is perpendicular to direction R1 (and along the support T).

[0057] The first surface F1 and the joint surface P are insulated from the second surface F2. A gap L exists between the intermediate section ZA and the second strip section HA. This gap electrically isolates the second surface (and thus the second strip section) from the first surface F or the connecting surface section VF of the first surface F, and the joint surface P. The gap L is represented in the form of a groove extending along direction R1. The thickness of the conductor path layer is completely divided along the groove. The conductor path layer has a gap that extends along most of the outer edge of the joint surface P, so the joint surface P is also insulated from the first surface F1. Therefore, the joint surface is insulated by the groove from the connecting surface section VF and from the surface region of the first surface F1 extending within the first strip section LA. With respect to the second surface F2, the joint surface P (and the first surface or the connecting surface section VF of the first surface) is isolated by the illustrated gap L. This separation results in electrical insulation between the second surface F2 and the first surface F1, and electrical insulation between the second surface F2 and the junction surface P. For this purpose, the support T has an insulating layer on which a conductor path layer is formed.

[0058] Therefore, the conductor track layer is structured by the grooves or gaps described above. The grooves or gaps define the layout of the conductor track layer. According to another mode of consideration, these surfaces or the outer edges of these surfaces of the conductor track layer define the layout of the conductor track layer or the half-bridge module.

[0059] In schematic Figure 1, the joint surface P has a substantially rectangular cross-section. This also applies to the connecting surface section VF. However, this is only one of many possibilities and schematicly represents that the connecting surface section VF and the joint surface P both substantially completely fill the intermediate section ZA, that the connecting surface section VF and the joint surface P extend substantially to the second surface F2 or the second strip section HA, and that the connecting surface section VF and the joint surface P can be connected in contact from the second surface F2 by a short connecting body V'.

[0060] Figures 2a to 2c schematically show several other embodiments of the geometric configuration of the joint surface P or the connection surface section VF.

[0061] The embodiment of the half-bridge module M shown in Figure 1 is a mounted half-bridge module comprising a first transistor LT and a second transistor HT. The first transistor LT is located on the first plane F1 in the first strip section LA. Thus, the first transistor is mounted on a portion of the first plane F1 that is continuous along direction R1 (or located within the first strip section LA). From this continuous plane region of the first plane F1, the connecting plane section VF extends toward the second strip section HA.

[0062] The second transistor HT is housed on the second surface F2 and, consequently, within the second strip section HA. The second transistors HT are positioned side by side along direction R1 at regular intervals. The first transistor LT is also positioned side by side at regular intervals along the first direction R1 on the first surface F1 (in the first strip section LA). Two rows of transistors are formed, located in each edge region opposite to the support T or conductor path surface (i.e., within the mutually separated first strip section LA and second strip section HA). A connection surface section VF or junction surface P extends between the first transistor on one side and the second transistor on the other. In other words, a second strip section extends between the rows of transistors LT and HT, and the surface or surface section provided therein is used for connecting the transistors.

[0063] Inside the conductor path layer, the junction surface P is electrically insulated from the first surface F1 (and also from the second surface F2). However, there is a connector V that connects the junction surface P to the transistor LT. Variations are shown in which one junction surface is connected to multiple transistors (two in this case) via multiple connectors V (two are shown). For this purpose, each transistor LT has an output path contact surface OK, from which the connector V extends toward the junction surface P. The output path contact surface OK is, in particular, the metallized layer of the transistor LT and relates to the output terminals of the transistor (drain, source, emitter, or collector). The connector V may be, in particular, a wire, a thin metal sheet, a conductive bridge element, a bonding tape, or a bonding strip, and may be made of, for example, aluminum, copper, or another conductive material. In the illustration, the larger junction surface P (the three junction surfaces P on the left in Figure 1) is connected to two transistors or two contact surfaces OK, respectively. The junction surface P, that is, the rightmost junction surface, is the smaller one and is connected to only one transistor LT. Therefore, these junction surfaces P can be connected to different numbers of transistors simultaneously, and the junction surfaces P may be of different sizes.

[0064] The same applies to the connection surface sections VF, which may have different widths (dimensions in direction R1), as shown in Figure 1. The width of the leftmost connection surface section VF is narrower than the width of the connection surface sections VF that follow to its right. Here again, the connection surface sections VF are connected to different numbers of transistors LT. The three larger connection surface sections VF are connected to two transistors LT, while the narrower connection surface section VF is connected to only one transistor LT for linking purposes. However, despite the differences in number, surface size, or width, no asymmetry arises from an electrical standpoint. The second transistor HT also has output path contact surfaces OK', each of which may be formed similarly to the output contact surfaces OK, which are output surfaces. The connection surface sections VF are connected to the corresponding contact surfaces OK' of transistor HT via each connection V'.

[0065] Each transistor LT is connected to one of the multiple junction surfaces P shown. Each transistor LT is connected to one of the multiple connection surface sections VF shown. However, additional connection surface sections or junction surfaces may be provided that do not have connections to the transistors, i.e., do not have connections through the connectors V, V'.

[0066] Figure 1 shows multiple groups of junction elements 1, 2, and 3. The first group of junction elements 1 is located on the connection surface section VF. Generally, the group of junction elements 1 is located on the first surface F1. Therefore, embodiments may be provided in which the first group of junction elements 1 is located on the first surface F1 in the first strip section LA, rather than being located on the first surface F1 in the intermediate section ZA as shown. In other words, the junction elements may be located on a surface region of the first surface F1 that is continuous in direction R1, i.e., located within the first strip section LA. Therefore, there are two possibilities for arranging the first group of junction elements 1. Thus, it is possible to arrange the group of first junction elements 1 on the connection surface section VF as shown, or it is possible to arrange the first junction elements in the edge region of the first strip section LA, opposite to the intermediate section ZA, as indicated by reference numeral 1'. Therefore, a group of first junction elements 1' arranged between transistors LT in the first strip section LA is shown. The group of first junction element 1 or first junction element 1' includes junction elements distributed (and spaced apart from each other) along direction R1. This allows the potential of the first surface to be connected at multiple points to the (first) connecting conductor that guides the potential of the first surface F1. This is specifically the phase potential or load potential, and in an electrical point of view, corresponds to the potential of the inner connection of the half-bridge.

[0067] Furthermore, a second group of junction elements 2 is shown. Each illustrated junction surface P has (at least) one junction element 2. These junction elements 2 are arranged to connect to the same (second) connecting conductor, i.e., they are connected to each other via this connecting conductor. The second junction elements are arranged to guide the same potential, in particular a DC voltage supply potential (e.g., a negative supply potential). The group of second junction elements 2 is located on the junction surface P, and therefore within the intermediate section ZA.

[0068] In the illustrated embodiment, the first group of junction elements 1 and the second group of junction elements 2 are provided in two rows extending along direction R1 and located within the intermediate section ZA. The use of junction elements arranged as indicated by reference numeral 1 allows for connection paths to various transistors LT,HT having substantially equal lengths. The junction element indicated by reference numeral 1' allows connection to the first surface F1 at locations opposite to the second strip section. Furthermore, these locations are separated from the junction surface P or junction element 2 by at least half the width of the first strip section.

[0069] The third group of joint elements 3 is located within the second strip section HA, i.e., on the second surface F2. These joint elements are also arranged along a row extending in direction R1. Generally, various groups of joint elements 1, 1', 2, and 3 can be arranged in multiple rows, and these rows are offset from each other substantially perpendicular to direction R1 (particularly along the support T).

[0070] A connector V is shown that connects the contact surface OK of transistor LT to the junction surface P. Similarly, a connector V' is shown that connects the junction surface section VF to the contact surface OK' of transistor HT. If no transistors are mounted on the half-bridge module M, this layout alone allows the connectors V and V' to be made correspondingly short, and allows the connectors V and V' to extend from the junction surface section VF or the junction surface P into the strip sections LA and HA. In embodiments where no transistors are mounted, the mounting surface for the transistor or the junction element for the transistor, such as a conductive connector, is located where the transistors are shown in Figure 1.

[0071] Figure 1 shows a mounted half-bridge module M, which includes transistors having signal contacts SK in addition to output contact surfaces OK and OK'. The diagram shows transistors, each with two signal contacts. These may be formed, for example, as gate terminals, Kelvin terminals (temperature signal terminals), or sensor terminals (current detection terminals). Transistors with three signal contact surfaces SK and SK' may also be provided, or transistors with only one signal contact surface SK and SK' may be provided.

[0072] In the conductor path layer layout shown in Figure 1, both the junction surface P and the connection surface section VF extend between the two strip sections LA and HA. Therefore, in order to realize a half-bridge, direct and short connection paths are created for both the transistors in the first strip section LA and the transistors in the second strip section HA. The illustrated transistors LT are connected in parallel to each other. This also applies to the transistors HT in the second strip section HA. This parallel connection circuit is achieved by the fact that the first transistors LT are mounted on the same first surface F1, and all of the second transistors HT are mounted on the second surface F2. Furthermore, the parallel connection circuit of the first transistors LT is obtained by the fact that a junction conductor (also called a connecting conductor path) or a short-circuit connection (not shown) brings the junction surfaces P into contact, thereby short-circuiting these junction surfaces P. Furthermore, the parallel connection circuit of the second transistors HT is obtained by the fact that these second transistors HT are each connected (via a connector V') to the first surface F1 or to the connection surface section VF that converges on the first strip section. This is because surface 1 is continuous in the first strip section.

[0073] Junction element 2 is, in particular, a negative potential junction element, and junction element 3 is a terminal for a positive potential. These two potentials are the potentials of the supply DC voltage. Junction element 1 forms a terminal for the potential of the connection point or internal connection between two transistor elements of the illustrated half-bridge module, arising from various transistor groups. The potential of junction element 1 may be used, for example, as a load terminal or as a phase terminal for an electromechanical device. This also applies to junction element 1'. A first junction conductor may be provided, and the first junction conductor is connected to the first junction element 1. The first junction conductor may be a phase terminal of the half-bridge module. A second junction conductor may be provided, and the second junction conductor is connected to the second junction element 2. The second junction conductor may be the negative supply potential conductor of the half-bridge module. A third junction conductor may be provided, and the third junction conductor is connected to the third junction element 3. The third junction conductor may be the positive supply potential conductor of the half-bridge module.

[0074] A filter circuit may be provided, for example, a snubber which can be placed at the location indicated by the × mark. These locations are in the edge region of the second surface adjacent to the intermediate section (or joint surface P). For example, each filter circuit may be formed as an SMD component mounted on the second surface F2. Furthermore, the filter circuit may be connected to the joint surface by bonding connections. If the filter circuit has surface contacts, the bonding connections may extend from the joint surface P opposite to the filter circuit to the surface contacts. This type of SMD component has another contact surface, and this other contact surface allows the SMD component to be mounted on the second surface. The filter circuit may be located on the joint surface P in the edge region of the joint surface P adjacent to the second surface.

[0075] Figures 2a, 2b, and 2c show another geometric embodiment for representing the joint surface P or the joint surface section VF. Each surface F1 in Figures 2a to 2c corresponds to the first surface F1 inside the first strip section LA and inside the surface region of the first surface F1 that forms the joint surface section. A first partial region of the first surface F1 is located within the first strip section LA and is continuous in direction R1. From there, the joint surface section VF extends to the second strip section HA or the second surface F2. An intermediate section located between the first surface region of surface F1 and the second surface F2 is provided with the joint surface P. It is schematically shown that the joint surface section VF and the joint surface P (including the portion of the conductor path layer) substantially completely cover the intermediate section, and only the gap between the joint surface section VF and the joint surface P interrupts the otherwise continuous conductor path layer.

[0076] In Figure 2a, the joint surface P has a first region adjacent to a continuous portion of the first surface F1 and which is substantially rectangular, followed by a tapering section in the direction toward the second surface F2. A trapezoidal tapering section is shown. In the direction toward the second surface F2, another portion follows, which is rectangular like the first portion but is narrower than the first portion. The joint surface section VF shown in Figure 2 is formed complementary to this. Starting from the portion of the first surface F1 located within the first strip section and moving toward the second surface F2, the illustrated joint surface section VF extends substantially rectangularly, followed by a section that widens. Similarly, in the direction toward the second surface F2, a similar rectangular portion follows, but this portion is wider than the first portion. Therefore, Figure 2a shows an insulated joint surface P in the shape of a trapezoid, with rectangles of different sizes following the trapezoid in a direction perpendicular to the parallel side pairs of the trapezoid.

[0077] Figure 2b shows another embodiment of the insulated joint surface P. This embodiment has a first rectangular sub-region, to which a trapezoid is followed in the direction toward the second surface F2. Similar to Figure 2a, in Figure 2b, the corresponding tangent joint surface section VF is formed complementary to the joint surface P. The subsequent trapezoid, tapering toward the second surface F2, is adjacent to the second surface F2.

[0078] Figure 2c shows another embodiment with a trapezoidal joint surface P, where the wider side of the trapezoidal parallel pair of joint surfaces P is adjacent to the surface section of the first surface F1 located within the first strip section, while the narrower side of the trapezoidal parallel pair of joint surfaces P is adjacent to the second surface F2 (however, it is not in contact with the second surface F2). Here again, it can be seen that the connecting surface section VF may be formed generally complementary to the joint surface P.

[0079] The groove between the joint surface P and the connection surface section VF extends around most of the joint surface P and preferably has a substantially constant width along this extension. A groove is also provided between the second surface F2 on one side and the connection surface section VF and joint surface P on the other side. This groove can similarly have a constant width in the direction of extension. Since the two grooves described above completely surround the joint surface P, the electrical insulation within the conductor path layer created by these grooves makes the joint surface P within the conductor path layer an electrical island, i.e., it is insulated (from the surrounding area) within the structured conductor path layer. The conductor path layer also includes structures in addition to the conductive surface, which cause electrical interruptions within the conductor path layer.

[0080] Figure 3 shows an alternative embodiment of a filter circuit having a capacitor component C and a resistor component R. Between the second surface F2 and the junction surface P, there is an intermediate island ZI separated by a groove from both the second surface F2, the junction surface P, and the first surface or connection surface section VF. The intermediate island ZI is a conductive surface insulated from adjacent regions of the conductor path layer. The intermediate island ZI is located in the edge region of the second strip section HA facing the intermediate section ZA, the edge region of the intermediate section ZA facing the second strip section HA, or a region including both of these edge regions.

[0081] The resistor R starts from the second surface F2 and bridges the groove between the second surface F2 and the intermediate island ZI. In other words, the resistor R connects the second surface F2 to the intermediate island. The intermediate island ZI is further connected to the junction surface P via a capacitor C, which bridges the groove between the intermediate island and the junction surface. The capacitor and resistor may be placed in swapped positions. A series RC element is obtained that connects the second surface F2 to the junction surface P. In this way, the RC element connects the two DC voltage supply potentials of the module as a high-pass filter.

[0082] The filter circuit shown in Figure 3 may be located in or above the location indicated by the "x" in Figure 1. The intermediate island is formed as part of the conductor layer. Similarly, the second surface, the first surface, and the junction surface form parts of the conductor layer, but they are separated from each other (inside the conductor layer).

Claims

1. A half-bridge module (M) comprising a support (T) having a conductor path layer, The conductor path layer has a first transistor strip section (LA), a second transistor strip section (HA), and an intermediate section (ZA), each extending along a first direction (R1). The aforementioned intermediate section (ZA) is located between the first transistor strip section (LA) and the second transistor strip section (HA). Within the aforementioned intermediate section (ZA), a connection surface section (VF) of the first surface (F1), which also extends into the first transistor strip section (LA), and a junction surface (P) insulated from there are alternately provided in the first direction (R1). The first surface (F1) within the first transistor strip section (LA) extends as a continuous strip in the first direction (R1). Half-bridge module (M).

2. The connection surface section (VF) is adjacent to the second transistor strip section (HA) and is isolated from the second transistor strip section (HA), and / or The half-bridge module (M) according to claim 1, wherein the bonding surface (P) is adjacent to the first transistor strip section (LA).

3. The connection surface section (VF) widens toward the second transistor strip section (HA), and / or The junction surface (P) tapers toward the second transistor strip section (HA), the half-bridge module (M) according to claim 1 or 2.

4. The half-bridge module (M) according to claim 1 or 2, wherein the connection surface section (VF) extends from the continuous strip toward the second transistor strip section (HA).

5. The half-bridge module (M) according to claim 1 or 2, wherein a second surface (F2) extends within the second transistor strip section (HA), the second surface (F2) is insulated from the first surface (F1) and the junction surface (P), and has a mounting surface for transistors (HT) extending in one or more rows along the first direction (R1).

6. The half-bridge module (M) according to claim 1 or 2, wherein the first surface (F1) within the first transistor strip section (LA) has a mounting surface for transistors (HT) extending in one or more rows along the first direction (R1).

7. A half-bridge module (M) according to claim 1 or 2, wherein groups of bonding elements (1, 2, 3) are provided on the first surface (F1), on the bonding surface (P), and within the second transistor strip section (HA), and the bonding elements (1, 2, 3) are formed as sintered pads, soldering pads, welding surfaces, bonding pins, bonding metal sheets, or mounting holes.

8. The group of junction elements (1) located on the first surface (F1) is provided within the intermediate section (ZA), or is located in the center between the row of transistor mounting surfaces in the first transistor strip section (LA) and the row of transistor mounting surfaces in the second transistor strip section (HA), with a deviation. The half-bridge module (M) according to claim 7, wherein the deviation is 20 mm or less, 15 mm or less, 10 mm or less, or 5 mm or less.

9. It has a first connector (V) that is connected to the bonding surface (P) and extends from the bonding surface (P) across the support (T) into the first transistor strip section (LA), The half-bridge module (M) according to claim 1 or 2, further comprising a second connector (V'), the second connector (V') being connected to the connection surface section (VF) and extending from the connection surface section (VF) across the support (T) into the second transistor strip section (HA).

10. A first transistor (LT) and a second transistor (HT) are mounted, and the first transistor (LT) is mounted on the first surface (F1) of the conductor path layer within the first transistor strip section (LA). The half-bridge module (M) according to claim 1 or 2, wherein a second transistor (HT) is mounted on a second surface (F2) extending within the second transistor strip section (HA).

11. The first output path contact surface of the first transistor (LT) is connected to the first surface (F1), The first output path contact surface of the second transistor (HT) is connected to the second surface (F2), The second output path contact surface (OK) of the first transistor (LT) is connected to the junction surface (P) via a first connector (V) that extends across the support (T), The half-bridge module (M) according to claim 10, wherein the second output path contact surface (OK') of the second transistor (HT) is connected to the connection surface section (VF) across a second connector (V') extending across the support (T).

12. It has a half-bridge comprising a low-side transistor element, a high-side transistor element, and an internal connection between the transistor elements. The half-bridge module (M) according to claim 10, wherein the low-side transistor element is formed by the first transistor (LT), the high-side transistor element is formed by the second transistor (HT), and the inner connection includes the first surface (F1).

13. The first transistor (LT) and the second transistor (HT) each have signal contact surfaces (SK, SK'), The half-bridge module (M) according to claim 10, wherein the signal contact surface (SK) of the first transistor (LT) is provided on the side of the first transistor (LT) opposite to the intermediate section (ZA), and the signal contact surface (SK') of the second transistor (HT) is provided on the side of the second transistor (HT) opposite to the intermediate section (ZA).

14. At least one filter circuit (FI; C, R) is installed. The half-bridge module (M) according to claim 1 or 2, wherein the at least one filter circuit (FI; C, R) is located within the second transistor strip section (HA) and / or on the junction surface (P).

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