Process chambers and semiconductor process equipment

Abstract

The present invention discloses a process chamber and a semiconductor process apparatus, relating to the technical field of semiconductors, including a base that can be lifted and lowered, a chamber body provided with a plurality of push-up pins and push-up pin brackets. In the base, a plurality of push-up pin holes penetrating the base are vertically opened. On the lower surface of the base, a guide extending in the vertical direction is provided. The guide is slidably connected to the push-up pin bracket and can rise together with the base. When the lower end contacts the push-up pin bracket, it can be stopper-fitted thereto, so that the push-up pin bracket and the plurality of push-up pins can rise together with the guide. This technical solution solves the problems that the process uniformity in the wafer projection area corresponding to the push-up pins in the prior art is deteriorated, and the push-up pins having an inverted taper-shaped stopper structure are extremely likely to get stuck in the push-up pin holes of the base and are difficult to remove.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductors, and more specifically, relates to a process chamber and a semiconductor process apparatus.

Background Art

[0002] In a semiconductor process apparatus, a plasma enhanced chemical vapor deposition apparatus (PECVD: Plasma Enhance Chemical Vapor Deposition) is used for a dielectric thin film deposition process to grow a dielectric thin film mainly composed of Si, O, and N on the surface of a wafer (also used for a doped thin film deposition process containing B and P). Due to the particularity of the PECVD process, generally the material of its push-up pin is always a ceramic material. The base needs to be electrically connected by RF as the electrode plate of the PECVD process, mainly made of a conductor material such as an aluminum alloy (although there is also an AlN material, there is also a metal electrode plate inside), a part of the push-up pin is inside the electrode plate, and since the push-up pin is a ceramic insulating material, during the process, due to the presence of the push-up pin, the electric field is distorted in the push-up pin region. Based on the capacitance principle, when the capacitive dielectric changes, the electric field lines bend or the electric field strength decreases, etc., and the direction and strength of the electric field lines change due to the dielectric.

[0003] In conventional process chambers, as shown in Figure 1, to ensure that the push-up needle 2 can move with the base 1 when the base 1 rises, an inverted tapered stopper structure is provided at the top of the push-up needle 2. The stopper structure forms a stopper fitting with the inverted tapered hole of the base 1, increasing the surface area of ​​the top end face of the push-up needle 2. This results in poor process uniformity within the wafer projection area corresponding to the push-up needle 2, and further affects the process uniformity of the entire wafer. Furthermore, regarding the fitting between the push-up needle 2 and the base 1 in conventional semiconductor process equipment as shown in Figure 1, the base 1 experiences thermal expansion and cooling contraction. Therefore, during maintenance, when the base 1 is in a cold state, and the outer circumference of the stopper structure contacts the hole wall of the inverted tapered hole in the base 1, the push-up needle 2, which has an inverted tapered stopper structure, is extremely prone to getting caught in the push-up needle hole of the base 1 and is difficult to remove. [Overview of the project] [Problems that the invention aims to solve]

[0004] The object of the present invention is to provide a process chamber and semiconductor process apparatus that solve the problems present in the prior art, namely, the large surface area of ​​the top end face of the push-up needle in the prior art, which leads to poor process uniformity within the wafer projection area corresponding to the push-up needle, and the problem that the push-up needle having an inverse tapered stopper structure is extremely prone to getting stuck in the push-up needle hole of the base and is difficult to remove. [Means for solving the problem]

[0005] To achieve the above objective, the present invention includes a chamber body containing a vertically movable base, a plurality of thrusting needles, and a thrusting needle bracket, wherein the base has a plurality of vertically oriented thrusting needle holes that penetrate the base, the plurality of thrusting needles are provided on the thrusting needle bracket and are inserted one-to-one into the plurality of thrusting needle holes, a vertically extending guide is provided on the lower surface of the base, the guide is slidably connected to the thrusting needle bracket, the guide rises together with the base and the lower end of the guide contacts the thrusting needle bracket The present invention provides a process chamber applicable to a semiconductor process apparatus, in which a stopper can be fitted to it when the push-up needle bracket and the plurality of push-up needles can be raised together with the guide, the push-up needle bracket contacts the bottom wall of the chamber body when the base is in the transport position, the plurality of push-up needles extend from the upper surface of the base to support the wafer, and when the base is in the process position, the lower end of the guide is stopper-fitted to the push-up needle bracket, and the upper ends of the plurality of push-up needles are not higher than the upper surface of the base.

[0006] Selectively, the push-up needle hole includes a fitting hole and a guide hole arranged from top to bottom, the diameter of the fitting hole being smaller than the diameter of the guide hole, and the push-up needle includes a fitting portion and a guide portion arranged from top to bottom, the fitting portion being fitted into the fitting hole with a gap, and the guide portion being guide-fitted into the guide hole.

[0007] Selectively, the fitting hole and the guide hole are transitionally connected by a first guide tapered surface, and the fitting portion and the guide portion are transitionally connected by a second guide tapered surface, the diameter of the outer annular surface of the second guide tapered surface and the diameter of the inner annular surface of the first guide tapered surface both gradually increase from top to bottom, and the second guide tapered surface is guide-fitted to the first guide tapered surface.

[0008] Selectively, the diameter of the fitting portion is 2 mm or less, and the diameter of the fitting hole is 2.5 mm or less.

[0009] Selectively, the number of guides is multiple, the multiple guides are spaced apart in the circumferential direction of the base, and each guide has a stopper portion at its lower end that protrudes outward from the outer circumferential surface of the guide, the guide rises together with the base, and the stopper portion can be fitted to the push-up needle bracket when it comes into contact with it.

[0010] Selectively, the push-up needle bracket includes a support plate and a support structure, the support plate being slidably connected to the guide, the guide rising together with the base and being able to engage a stopper when the lower end of the guide contacts the support plate, a plurality of the push-up needles being provided on the support plate, and a support structure being provided on the side of the support plate away from the base, the support structure contacting the bottom wall of the chamber body when the base is in the transport position.

[0011] The support structure may optionally include a plurality of support columns, which are spaced apart in the circumferential direction of the support plate, and when the base is in the transport position, the plurality of support columns contact the bottom wall of the chamber body.

[0012] Selectively, a height adjustment assembly is provided at one end of each of the support columns away from the support plate, and the height adjustment assemblies are used to adjust the height of the upper ends of the push-up needles relative to the upper surface of the base when the base is in the transport position.

[0013] Selectively, the height adjustment assembly includes a sleeve screw and a lock nut, wherein the sleeve screw is screwed onto the lower end of the support column, and rotating the sleeve screw raises or lowers the screwed support column relative to the sleeve screw, and the lock nut is screwed onto the support column, and the lock nut is provided above the sleeve screw and is used to lock the relative position of the sleeve screw and the support column.

[0014] As another technical solution, the present invention further provides a semiconductor process apparatus comprising the process chamber according to the present invention, a spray disc provided on the top of the process chamber, and a base lifting mechanism provided below the base, wherein the base lifting mechanism is used to drive the base up and down between the transport position and the process position, and the spray disc is used to spray a process gas into the process chamber. [Effects of the Invention]

[0015] The present invention provides a process chamber and a semiconductor process apparatus, the beneficial effects of which are as follows. The process chamber has a push-up needle bracket, which is guided by a guide, and the push-up needle bracket and a plurality of push-up needles can be raised together with the guide by stopper fitting between the lower end of the guide and the lifting bracket, and moreover, when the base is in the process position, the upper ends of the plurality of push-up needles are not raised higher than the upper surface of the base. In addition, since the push-up needle bracket can be raised together with the guide, the push-up needle bracket can always receive and support the push-up needles, and as a result there is no need to install a stopper structure on the top of the push-up needles, the area of ​​the top end face of the push-up needles is reduced, the influence on process uniformity in the wafer projection area corresponding to the push-up needles is reduced, and further the process uniformity of the entire wafer is improved. In addition, since there is no stopper structure on the top of the push-up needles in the process chamber, the phenomenon of thermal expansion and cooling contraction makes it easy for the stopper structure to get stuck to the base on the top of the push-up needles, which can make it difficult for the push-up needles to come out. [Brief explanation of the drawing]

[0016] Other features and advantages of the present invention will be described in detail in the following sections on specific embodiments.

[0017] By describing exemplary embodiments of the present invention in more detail with reference to the drawings, the above and other objects, features and advantages of the present invention will become more apparent, and in exemplary embodiments of the present invention, the same reference numerals generally represent the same components.

[0018] [Figure 1] This is a schematic diagram of the fitting between the push-up needle and the base in a conventional semiconductor process apparatus. [Figure 2] This diagram shows a schematic structure of the rising state of the push-up needle in a process chamber according to one embodiment of the present invention. [Figure 3] This diagram shows a schematic structure of the falling state of the thrusting needle in a process chamber according to one embodiment of the present invention. [Figure 4]Shows a schematic diagram of the fitting of the push-up pin and the base of the process chamber according to an embodiment of the present invention. [Figure 5] Shows a schematic diagram of the structure of the push-up pin of the process chamber according to an embodiment of the present invention. [Figure 6] Shows a three-dimensional schematic diagram of the push-up pin bracket and the support structure of the process chamber according to an embodiment of the present invention. [Figure 7] Shows a front structure schematic diagram of the push-up pin bracket and the support structure of the process chamber according to an embodiment of the present invention. [Figure 8] Shows a schematic diagram of the cross-sectional structure in the A direction of FIG. 7. [Figure 9] Shows a schematic diagram of the comparison of the projected area on the wafer between the push-up pin of the present invention and the push-up pin in the prior art process chamber. [Figure 10] Shows a schematic diagram of the comparison of the electric field uniformity distribution between the process chamber of the present invention and the prior art in the comparison state shown in FIG. 9.

Embodiments for Carrying Out the Invention

[0019] Hereinafter, preferred embodiments of the present invention will be described in more detail. Although the preferred embodiments of the present invention are described below, it should be understood that the present invention can be realized in various forms without being limited to the embodiments described in this specification. Conversely, providing these embodiments is to make the present invention clearer and more complete, and to be able to fully convey the scope of the present invention to those skilled in the art.

[0020] As shown in FIGS. 2 and 3, the present invention provides a process chamber applied to a semiconductor process device, including a base 1 that can move up and down, a plurality of push-up pins 2, and a chamber body 3 provided with a push-up pin bracket. A plurality of push-up pin holes penetrating the base 1 are opened in the vertical direction. The plurality of push-up pins 2 are provided on the push-up pin bracket and are correspondingly penetrated one-to-one into the plurality of push-up pin holes. On the lower surface of the base 1, a guide 6 extending in the vertical direction is provided. The guide 6 is slidably connected to the push-up pin bracket while abutting against the lower end of the guide 6. That is, the guide 6 rises together with the base 1, and when the lower end of the guide 6 contacts the push-up pin bracket, it can be stopper-fitted thereto, whereby the push-up pin bracket and the plurality of push-up pins 2 can rise together with the guide 6. In this way, the push-up pin bracket can receive and support the plurality of push-up pins 2 when the base 1 moves up and down, so that the plurality of push-up pins 2 can be driven to move up and down together with the base 1. When the base 1 is in the transfer position, the push-up pin bracket contacts the bottom wall 20 of the chamber body 3, and the plurality of push-up pins 2 extend from the upper surface of the base 1 to support the wafer 2 1 and extend. When the base 1 is in the process position, the lower end of the guide 6 is stopper-fitted to the push-up pin bracket, and the upper ends of the plurality of push-up pins 2 are not higher than the upper surface of the base 1.

[0021] Specifically, in conventional semiconductor process equipment, as shown in Figure 1, the fitting between the push-up needle 2 and the base 1 is such that, in order to ensure that the push-up needle 2 can move together with the base 1 when the base 1 rises, an inverted tapered stopper structure is provided at the top of the push-up needle 2. The stopper structure forms a stopper fitting with the inverted tapered hole of the base 1, which increases the area of ​​the top end face of the push-up needle 2. This worsens the process uniformity within the wafer projection area corresponding to the push-up needle 2 and further affects the process uniformity of the entire wafer. Furthermore, regarding the fitting between the push-up needle 2 and the base 1 in conventional semiconductor process equipment as shown in Figure 1, because the base 1 undergoes thermal expansion and cooling contraction phenomena, during maintenance, the base 1 is in a cold state, and the outer circumference of the stopper structure contacts the hole wall of the inverted tapered hole of the base 1. As a result, the push-up needle 2, which has an inverted tapered stopper structure, is extremely prone to getting caught in the push-up needle hole of the base 1 and is difficult to remove.

[0022] In order to solve the problem that the process uniformity within the wafer projection area corresponding to the push-up needle 2 is poor due to the large surface area of ​​the top end face of the push-up needle 2 in the prior art, the present invention provides a process chamber in which a push-up needle bracket is provided below the base 1, and a guide through hole is provided in the push-up needle bracket as selectable, and a guide 6 is slidably inserted through the guide through hole, and the push-up needle bracket is guided by the guide 6, ensuring that the push-up needle bracket can slide vertically along the guide 6, and the lower end of the guide 6 has a stopper portion 7 that protrudes outward from the outer peripheral surface of the guide 6, the outer diameter of the stopper portion 7 is larger than the diameter of the guide through hole, and when the base 1 rises to a certain height, the stopper portion 7 comes into contact with the lower surface of the push-up needle bracket, thereby achieving stopper fitting between the guide 6 and the push-up needle bracket, at which point the guide 6, the push-up needle bracket and the base 1 are relatively fixed, and the three rise synchronously. The push-up needle 2 is slidably provided within the push-up needle hole, and the push-up needle bracket can rise together with the guide 6. Therefore, the push-up needle bracket can always receive and support the push-up needle 2, and thus there is no need to provide a stopper structure at the top of the push-up needle 2 to ensure that the push-up needle 2 can move together with the base 1 when the base 1 rises. This reduces the area of ​​the top end face of the push-up needle 2, reduces the influence of process uniformity within the projection area of ​​the wafer 21 corresponding to the push-up needle 2, and further improves the process uniformity of the entire wafer 21. In addition, since there is no stopper structure at the top of the push-up needle 2 in the process chamber, the phenomenon of thermal expansion and cooling contraction can easily cause the stopper structure and base 1 to lock together at the top of the push-up needle 2, thus avoiding the problem of the push-up needle becoming difficult to remove. The push-up needle 2 can be optionally columnar or tapered, and the push-up needle hole is slidably fitted with the push-up needle 2 and guides the raising and lowering of the push-up needle 2.

[0023] In actual applications, the lower end of the guide 6 may also employ other structures that can be fitted with a push-up needle bracket and a stopper, and the embodiments of the present invention are not particularly limited to this.

[0024] Specifically, the shape of the push-up needle hole matches the outer shape of the push-up needle 2. If the push-up needle 2 is columnar, the push-up needle hole is columnar; if the push-up needle 2 is tapered, the push-up needle hole is tapered. The hole wall of the tapered hole can also guide the push-up needle 2 into the correct position. Even if the push-up needle 2 is misaligned with the center of the push-up needle hole, the push-up needle 2 can be gradually brought into the correct position as the upper end of the push-up needle 2 extends from the upper surface of the base 1. To avoid the gap between the outer circumference of the upper end of the push-up needle 2 and the inner circumference of the push-up needle hole becoming too large when the upper end of the push-up needle 2 retracts into the push-up needle hole, the taper of both the tapered hole and the push-up needle 2 is small, and the gap between the outer circumference of the upper end of the push-up needle 2 and the inner circumference of the push-up needle hole is maintained at less than 0.5 mm when the upper end of the push-up needle 2 retracts into the push-up needle hole.

[0025] Selectively, the push-up needle bracket includes a support plate 4 and a support structure 5, the support plate 4 being slidably connected to a guide 6, the guide 6 rising with the base 1 and a stopper fitting can be engaged with the lower end of the guide 6 when it contacts the support plate 4. Multiple push-up needles 2 are provided on the support plate 4, and the support structure 5 is provided on the side of the support plate 4 away from the base 1, and when the base 1 is in the transport position, the support structure 5 contacts the bottom wall 20 of the chamber body 3.

[0026] Specifically, when the base 1 is in the transport position, the support structure 5 contacts the bottom wall 20 of the chamber body 3, and at this time, the upper ends of the multiple push-up needles 2 extend from the upper side of the base 1 and push up the wafer 21. The guide provides a guiding action to the support plate 4 and further guides the up and down movement of the push-up needles 2.

[0027] The support structure 5 may optionally include a plurality of support columns 14, which are spaced apart in the circumferential direction of the support plate 4, and when the base 1 is in the transport position, the plurality of support columns 14 are in contact with the bottom wall 20 of the chamber body 3.

[0028] Specifically, the support column 14 has a columnar boss structure formed on the lower surface of the support plate 4 so that it is supported by the bottom wall 20 of the chamber body 3 after the base 1 has descended to a certain height, passively generating relative motion between the lifting bracket and the base 1, and further lifting the push-up needle 2, raising the push-up needle 2 relative to the base 1, and lifting the wafer 21 on the base 1.

[0029] Selectively, the number of guides 6 is multiple, and the multiple guides 6 are spaced apart in the circumferential direction of the base 1, and one end of each guide 6 away from the base 1 has a stopper portion 7 that protrudes outward from the outer surface of the guide 6, and the guide 6 rises with the base 1 and can be stopped when the stopper portion 7 contacts the push-up needle bracket. Specifically, when the base 1 is in the process position, the support plate 4 abuts against the stopper portion 7, that is, the guide 6 rises with the base 1 and can be stopped when the stopper portion 7 contacts the support plate 4.

[0030] Specifically, the guide 6 is columnar, and the stopper portion 7 is provided on the outer circumference of the lower end of the guide 6. The stopper portion 7 is capable of interfering with the wall of the guide through hole in the support plate 4, thereby acting as a stopper for the support plate 4. When the base 1 rises to a certain height, the stopper portion 7 contacts and engages with the lower surface of the support plate 4, thereby driving the base 1 to raise the support plate 4 together.

[0031] Selectively, the push-up needle hole includes a fitting hole 8 and a guide hole 9 arranged from top to bottom, with the diameter of the fitting hole 8 being smaller than the diameter of the guide hole 9. The push-up needle 2 includes a fitting portion 10 and a guide portion 11 arranged from top to bottom, with the fitting portion 10 being gap-fitted into the fitting hole 8 and the guide portion 11 being guide-fitted into the guide hole 9.

[0032] Specifically, as shown in Figures 4 and 5, in this embodiment, the push-up needle hole is a stepped hole, the push-up needle 2 is a stepped columnar shape, the fitting portion 10 of the push-up needle 2 is slidably provided in the fitting hole 8, the guide portion 11 of the push-up needle 2 is slidably provided in the guide hole 9, the fitting portion 10 and the fitting hole 8 employ a gap fit, and the guide portion 11 and the guide hole 9 employ a sliding guide fit to ensure the guiding action of the push-up needle hole to the push-up needle 2.

[0033] Selectively, the fitting hole 8 and the guide hole 9 are transitionally connected by the first guide tapered surface portion 12, and the fitting portion 10 and the guide portion 11 are transitionally connected by the second guide tapered surface portion 13. The diameter of the outer annular surface of the second guide tapered surface portion 13 and the diameter of the inner annular surface of the first guide tapered surface portion 12 both gradually increase from top to bottom, and the second guide tapered surface portion 13 is guide-fitted to the first guide tapered surface portion 12.

[0034] Specifically, as shown in Figure 4, the push-up needle hole has a first guide tapered surface portion 12, and the push-up needle 2 has a second guide tapered surface portion 13. As the push-up needle 2 rises relative to the push-up needle hole, the second guide tapered surface portion 13 gradually approaches the first guide tapered surface portion 12 until they come into contact. In this process, the first guide tapered surface portion 12 guides the second guide tapered surface portion 13 to the correct position. Even if the push-up needle 2 is misaligned with respect to the center of the push-up needle hole, the push-up needle 2 can be gradually brought to the correct position when the upper end of the push-up needle 2 extends from the upper surface of the base 1.

[0035] Furthermore, regarding the fitting between the push-up needle 2 and the base 1 in conventional semiconductor process equipment as shown in Figure 1, since the base 1 undergoes heating expansion and cooling contraction phenomena, during maintenance, the base 1 is in a cold state, and the outer circumference of the stopper structure contacts the hole wall of the reverse tapered hole in the base 1. As a result, the push-up needle 2, which has a reverse tapered stopper structure, easily gets caught in the push-up needle hole of the base 1 and is difficult to remove. Therefore, in the present invention, the fitting portion 10 and the fitting hole 8 are fitted with a gap, and an F7 / g6 shaft hole fitting tolerance can be adopted. During maintenance, the fitting between the push-up needle 2 and the push-up needle hole of the base 1 is shown in Figure 4, the first guide tapered surface portion 12 does not contact the second guide tapered surface portion 13, and the push-up needle 2 can be easily removed from below the base 1 by removing the push-up needle bracket. The push-up needle 2 does not become locked, and the maintainability of the equipment is improved.

[0036] Selectively, the diameter of the mating portion 10 is 2 mm or less, and the diameter of the mating hole 8 is 2.5 mm or less.

[0037] Specifically, since there is no need to provide a stopper structure at the upper end of the push-up needle 2 in this invention, the diameter of the fitting portion 10 at the upper end of the push-up needle 2 can be made as small as possible, the diameter of the fitting portion 10 not exceeding 2 mm, the hole diameter of the fitting hole 8 not exceeding 2.5 mm, and the opening dimensions on the upper surface of the base 1 are also significantly reduced compared to the reverse tapered hole of the base 1 in conventional semiconductor process equipment as shown in Figure 1. The area of ​​the projection region on the wafer 21 of the top end face of the push-up needle 2 is made extremely small, and furthermore, the impact on the overall process uniformity of the wafer 21 is reduced.

[0038] For selectable purposes, the diameter of the guide portion 11 of the thrusting needle 2 is generally 10 mm or less.

[0039] Specifically, the diameter of the guide portion 11 is larger than the diameter of the fitting portion 10, ensuring as much overall strength and rigidity as possible for the thrusting needle 2.

[0040] The support plate 4 is optional, and the upper surface of the support plate 4 is flat.

[0041] Specifically, the support plate 4 is used to lift the thrusting needles 2, and its upper surface is flat, ensuring that multiple thrusting needles 2 are on the same plane, and further ensuring that the heights of the thrusting needles 2 are the same.

[0042] Selectively, a height adjustment assembly is provided at one end of each of the support columns 14 away from the support plate 4, and the height adjustment assemblies are used to adjust the height of the upper ends of the multiple push-up needles 2 relative to the upper surface of the base 1 when the base 1 is in the transport position.

[0043] Specifically, the height adjustment assembly is used to contact the bottom wall 20 of the chamber body 3 when the base 1 is in the transport position. Multiple height adjustment assemblies adjust the height of the upper ends of multiple push-up needles 2 relative to the upper surface of the base 1 when the base 1 is in the transport position, thereby ensuring that the multiple push-up needles 2 are on the same plane, and thus ensuring that the heights of the push-up needles 2 are the same.

[0044] The height adjustment assembly can be selected to include a sleeve screw 15 and a lock nut 16. The sleeve screw 15 is screwed onto the lower end of the support column 14, and by rotating the sleeve screw 15, the screwed support column 14 is raised or lowered relative to the sleeve screw 15. The lock nut 16 is screwed onto the support column 14 and is located above the sleeve screw 15. The lock nut 16 is used to lock the relative position of the sleeve screw 15 and the support column 14.

[0045] Specifically, as shown in Figures 6 to 8, a male screw is provided on the outer circumference of the lower end of the support column 14, and the sleeve screw 15 is screwed into the lower end of the support column 14. When it is necessary to adjust the height of the push-up needle 2 when the base 1 is in the wafer transport state of the wafer 21, the support height of the support plate 4 relative to the push-up needle 2 can be adjusted by rotating the sleeve screw 15, and the height of the push-up needle 2 can be raised or lowered. As shown in Figures 6 to 8, a lock nut 16 is further provided on the support column 14 on the lower surface of the support plate 4. When the adjustment of the sleeve screw 15 is completed, the lock nut 16 is locked, thereby fixing the position of the sleeve screw 15, preventing its position from changing according to conditions such as raising and lowering, and improving the stability of the operation of the device.

[0046] As another technical solution, as shown in Figure 2, an embodiment of the present invention further provides a semiconductor process apparatus comprising the process chamber according to the embodiment of the present invention, a spray disc 17 provided at the top of the process chamber, and a base lifting mechanism provided below the base 1, the base lifting mechanism being used to drive the base 1 up and down between a transport position and a process position. The spray disc 17 is used to spray process gas into the process chamber.

[0047] Specifically, the base lifting mechanism includes a lifting column 18 and a lifting drive structure. The lifting column 18 is connected to the bottom of the base 1, penetrates the bottom wall 20 of the chamber body 3 and extends downward to the chamber body 3. A ring-shaped support plate 4 is fitted to the outside of the lifting column 18. A bellows 19 is fitted to the portion of the lifting column 18 that is outside the bottom wall 20 of the chamber body 3. Both ends of the bellows 19 are sealed to the lower side of the bottom wall 20 of the chamber body 3 and the outer circumference of the lower end of the lifting column 18, respectively. The lifting drive structure is used to drive the lifting column 18 up and down, and further drives the base 1 and the wafer 21 on it up and down, thereby allowing the wafer 21 to move away from or approach the spray disk 17.

[0048] In one example, base 1 is a heating base that can heat the wafer 21 on top of it.

[0049] As described above, during use of the semiconductor process apparatus according to the present invention, in the initial state, the base 1 is in a low position (the position for transporting the wafer 21). At this time, the support structure 5 below the support plate 4 abuts the bottom wall 20 of the chamber body 3, and as the support plate 4 is lifted, the fitting portion 10 of the push-up needle 2 extends from the upper surface of the base 1. The upper end surface of the fitting portion 10 is a certain height higher than the upper surface of the base 1. The manipulator 22 loads the wafer 21, places the wafer 21 on the upper end surface of the fitting portion 10 of the push-up needle 2, and exits. Subsequently, the lifting mechanism of the base 1 drives the base 1 to rise. In the first stage, the push-up needle 2 and the support plate 4 do not rise, the upper surface of the push-up needle 2 is lower than the upper surface of the base 1, and the wafer 21 is placed on the base 1. The process proceeds to the second stage when the stopper portion 7 contacts the lower surface of the support plate 4. In the second stage, the push-up needle 2 rises together with the base 1 by the drive of the support plate 4 until the base 1 and the wafer 21 on top of it rise to a desired gap position for the process. After that, the process is started. When the process is finished, the above process is reversed, and finally the wafer 21 after the process is completed is removed by the manipulator 22. The present invention eliminates the need to lift the push-up needle 2 using a heated base, and eliminates the need to install a stopper structure on the top of the push-up needle 2 to ensure that the push-up needle 2 can move together with the base 1 when the base 1 rises. As a result, the area of ​​the top end face of the push-up needle 2 is significantly reduced, and the projected area of ​​the top end face of the push-up needle 2 on the wafer 21 is further reduced, which is advantageous for improving the uniformity of the electric field distribution and the overall process uniformity of the wafer 21. Figure 9 is a schematic diagram comparing the projected area on a wafer 21 of the push-up needle 2 of the present invention and the push-up needle 2 of a conventional semiconductor process apparatus. Figure 10 is a schematic diagram comparing the electric field uniformity distribution of the present invention and the conventional semiconductor process apparatus in the comparison state shown in Figure 9. Clearly, the present invention optimizes the electric field uniformity of the semiconductor process apparatus.

[0050] Although embodiments of the present invention have been described above, the above description is illustrative and not exhaustive, and is not limited to the embodiments disclosed. Many modifications and changes will be obvious to those skilled in the art without departing from the scope and spirit of the embodiments described. [Explanation of symbols]

[0051] 1 Base 2. Upward thrusting needle 3 Chamber body 4 Support plate 5 Support structure 6 Guide 7 Stopper section 8 Fitting holes 9 guide holes 10 Fitting part 11 Guide section 12 First guide tapered surface 13. Second guide tapered surface 14 Support pillar 15 Sleeve Screws 16 lock nuts 17 Spray Disc 18 Lifting pole 19 Bellows 20 Bottom wall 21 wafers 22 Manipulators

Claims

1. A process chamber applied to semiconductor process equipment, It includes a chamber body with a height-adjustable base, multiple thrusting needles, and thrusting needle brackets installed inside, The base has a plurality of vertically oriented push-up needle holes that penetrate the base, and the plurality of push-up needles are provided on the push-up needle bracket and are inserted one-to-one into the plurality of push-up needle holes, and a guide extending vertically is provided on the lower surface of the base, and the guide is slidably connected to the push-up needle bracket, and the guide rises together with the base, and when the lower end of the guide comes into contact with the push-up needle bracket a stopper can be fitted to it, thereby allowing the push-up needle bracket and the plurality of push-up needles to rise together with the guide. When the base is in the transport position, the push-up needle bracket contacts the bottom wall of the chamber body, and the multiple push-up needles extend from the upper surface of the base to support the wafer; when the base is in the process position, the lower end of the guide is stopper-fitted to the push-up needle bracket, and the upper ends of the multiple push-up needles are not higher than the upper surface of the base. The number of the guides is multiple, each of which is formed in a columnar shape and provided at intervals in the circumferential direction of the base, and each guide has a stopper portion at its lower end that protrudes outward from the outer surface of the guide, and each guide rises together with the base, and each stopper portion can be fitted onto the push-up needle bracket when it comes into contact with it. The push-up needle bracket includes a support plate and a support structure, the support plate having guide through holes, each guide being slidably connected to the guide through holes, the plurality of guides rising together with the base, and the stopper portion of each of the lower ends of the plurality of guides being able to be fitted to the support plate when it comes into contact with it, the plurality of push-up needles being provided on the support plate, the support structure being provided on the side of the support plate away from the base, and the support structure being in contact with the bottom wall of the chamber body when the base is in the transport position. A process chamber characterized by the following features.

2. The process chamber according to claim 1, characterized in that the push-up needle hole includes a fitting hole and a guide hole arranged in order from top to bottom, the diameter of the fitting hole is smaller than the diameter of the guide hole, the push-up needle includes a fitting portion and a guide portion arranged in order from top to bottom, the fitting portion is fitted into the fitting hole with a gap, and the guide portion is guide-fitted into the guide hole.

3. The process chamber according to claim 2, characterized in that the fitting hole and the guide hole are transitionally connected by a first guide tapered surface, the fitting portion and the guide portion are transitionally connected by a second guide tapered surface, the diameter of the outer annular surface of the second guide tapered surface and the diameter of the inner annular surface of the first guide tapered surface both gradually increase from top to bottom, and the second guide tapered surface is guide-fitted to the first guide tapered surface.

4. The process chamber according to claim 2, characterized in that the diameter of the fitting portion is 2 mm or less, and the diameter of the fitting hole is 2.5 mm or less.

5. The process chamber according to claim 1, wherein the support structure includes a plurality of support columns, the plurality of support columns are provided at intervals in the circumferential direction of the support plate, and when the base is in the transport position, the plurality of support columns are in contact with the bottom wall of the chamber body.

6. The process chamber according to claim 5, wherein a height adjustment assembly is provided at one end of each of the multiple support columns away from the support plate, and the multiple height adjustment assemblies are used to adjust the height of the upper ends of the multiple push-up needles relative to the upper surface of the base when the base is in the transport position.

7. The process chamber according to claim 6, wherein the height adjustment assembly includes a sleeve screw and a lock nut, the sleeve screw being screwed onto the lower end of the support column, the screwing onto the support column being raised or lowered relative to the sleeve screw by rotating the sleeve screw, the lock nut being screwed onto the support column, the lock nut being provided above the sleeve screw and used to lock the relative position between the sleeve screw and the support column.

8. A semiconductor process apparatus comprising a process chamber according to any one of claims 1 to 7, a spray disc provided on the top of the process chamber, and a base lifting mechanism provided below the base, wherein the base lifting mechanism is used to drive the base up and down between the transport position and the process position, and the spray disc is used to spray a process gas into the process chamber.

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