Semiconductor process equipment and its mounting device

Abstract

This application discloses a semiconductor process equipment belonging to semiconductor process technology and a mounting device therefor. The mounting device for the semiconductor process equipment includes a first surface and a second surface. The first surface is used for mounting a wafer. The height of the second surface is lower than that of the first surface. The second surface includes a base peripherally provided on the first surface, an upper surface on which an annular groove is formed, and a lower surface covering the second surface, and includes a deposition ring and a cover ring. The outer ring portion of the cover ring is supported on the lining of the reaction chamber of the semiconductor process equipment. The inner ring portion of the cover ring is provided to cover the outer ring portion of the deposition ring. A plurality of annular protrusions and a plurality of annular recesses are provided on two opposing surfaces of the inner ring portion of the cover ring and the outer ring portion of the deposition ring, thereby forming a labyrinth passage between the connection location between the cover ring and the deposition ring and the annular groove. The mounting device of this application can effectively reduce the probability of adhesion occurring between the cover ring and the deposition ring during the semiconductor process treatment process.

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor processes, and particularly relates to semiconductor process equipment and its mounting device.

Background Art

[0002] Currently, in the semiconductor manufacturing process, the technology using aluminum and aluminum alloys as interconnecting lines is widely used in the metallization process of chip manufacturing. The general manufacturing process is the magnetron sputtering method. A typical magnetron sputtering device has a reaction chamber 10 as shown in FIG. 1. Above the reaction chamber 10, a semiconductor process assembly 20 for performing magnetron sputtering is provided. Below the reaction chamber 10, a mounting device for placing the wafer 40 is provided. The mounting device mainly includes a base 31, a deposition ring 32, and a cover ring 33. The bottom surface of the deposition ring 32 is flat and is directly arranged on the base 31. On the upper surface, grooves are formed for depositing reactants generated during the magnetron sputtering process, thereby preventing the surface of the base 31 from being contaminated by the reactants. In the prior art, since the connection location between the cover ring 33 and the deposition ring 32 is close to the above-mentioned groove, after the magnetron sputtering process continues for a certain period, as the reactants deposited in the groove continue to increase, a sticking phenomenon occurs at the connection location between the cover ring 33 and the deposition ring 32. As a result, when the cover ring 33 rises, the deposition ring 32 also rises in conjunction, and the deposition ring 32 falls off. Also, since the inner diameter of the deposition ring 32 is generally smaller than that of the wafer 40, the deposition ring 32 that rises in conjunction simultaneously raises the wafer 40, causing failures in wafer transfer and wafer breakage phenomena.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The embodiments of this application provide semiconductor process equipment and a mounting apparatus thereof, which aim to improve upon the problems that conventional mounting apparatuses tend to experience adhesion phenomena during the processing of magnetron sputtering processes, leading to issues such as deposition ring detachment, wafer transport failure, and wafer damage. [Means for solving the problem]

[0004] In a first embodiment, the present invention provides a mounting device for semiconductor process equipment that includes a first surface and a second surface, the first surface being used for mounting a wafer, the height of the second surface being lower than the height of the first surface, the second surface including a base provided around the first surface, an upper surface having an annular groove formed thereon, and a lower surface covering the second surface, the outer ring portion of the covering portion being supported on the lining of the reaction chamber of semiconductor process equipment, the inner ring portion of the covering portion being provided to cover the outer ring portion of the deposition ring, and a plurality of annular protrusions and a plurality of annular recesses being provided on the two opposing surfaces of the inner ring portion of the covering portion and the outer ring portion of the deposition ring, thereby forming a labyrinth passage between the connection point between the covering portion and the deposition ring and the annular groove.

[0005] In some embodiments of the present application, the heights of the multiple annular protrusions are different, the depths of the multiple annular recesses are different, the multiple annular protrusions are all provided on the upper surface of the outer ring portion of the deposition ring and the multiple annular recesses are all provided on the lower surface of the inner ring portion of the covering ring, or the multiple annular protrusions are all provided on the lower surface of the inner ring portion of the covering ring and the multiple annular recesses are all provided on the upper surface of the outer ring portion of the deposition ring, or both the multiple annular protrusions and the multiple annular recesses are partially provided on the upper surface of the outer ring portion of the deposition ring and the remainder is provided on the lower surface of the inner ring portion of the covering ring.

[0006] In some embodiments of the present application, the inner ring portion of the covering has an overhang structure, and the overhang structure shields a portion of the annular groove.

[0007] In some embodiments of the present application, the base includes a first cylinder and a second cylinder, the first and second cylinders being coaxially connected, the first cylinder positioned above the second cylinder, and the bottom radius of the first cylinder being smaller than the bottom radius of the second cylinder, thereby forming the first and second surfaces on the upper side of the base, respectively, and the inner ring portion of the deposition ring and the outer wall of the first cylinder are positioned by a plurality of first positioning bosses and a plurality of first positioning grooves engaging in a one-to-one correspondence.

[0008] In some embodiments of the present application, the inner ring portion of the covering ring and the outer ring portion of the deposition ring are positioned by the engagement of a plurality of second positioning bosses and a plurality of second positioning grooves in a one-to-one correspondence.

[0009] In some embodiments of the present application, the outer ring of the deposition ring is further provided with a plurality of buckle grooves, and the deposition device further includes a plurality of buckles, and the outer ring of the deposition ring and the base are fastened together by the engagement of the plurality of buckles and the plurality of buckle grooves in a one-to-one correspondence.

[0010] In some embodiments of the present application, the buckle includes a buckle rod, one end of which is provided with a first hook for engaging a corresponding buckle groove, and the other end of which is provided with a second hook for engaging the bottom surface of the base.

[0011] In some embodiments of the present application, the buckle groove is a T-shaped groove, and the first hook is a T-shaped hook that fits into the T-shaped groove.

[0012] In some embodiments of the present application, a fixing ring is further included, which is provided around the outer wall of the base and locks a plurality of the buckles to the outer wall of the base.

[0013] In some embodiments of the present invention, a third hook for attaching the fixing ring is further provided at the other end of the buckle rod.

[0014] In a second aspect, an embodiment of the present application includes the above-described installation device, a reaction chamber having a sealed space, and a semiconductor process assembly, wherein the above-described installation device and the semiconductor process assembly are housed within the sealed space, providing semiconductor process equipment. [Effects of the Invention]

[0015] In this application, the mounting device includes a base, a deposition ring, and a covering ring. The inner ring of the covering ring is provided to cover the outer ring of the deposition ring, and a plurality of annular protrusions and a plurality of annular recesses are provided between the inner ring of the covering ring and the outer ring of the deposition ring, thereby forming a labyrinth passage between the covering ring and the deposition ring. In this way, a labyrinth passage is formed between the connection point between the covering ring and the deposition ring and the annular groove. This significantly increases the distance over which reactants deposited in the annular groove during the semiconductor processing process can reach the connection point. Furthermore, the reactants must overcome multiple labyrinth barriers to reach the connection point, greatly increasing the difficulty of the reactants reaching the connection point. Therefore, the mounting device of this application can effectively reduce the probability of adhesion occurring between the covering ring and the deposition ring during the semiconductor processing process. [Brief explanation of the drawing]

[0016] The specific embodiments of this application and their beneficial effects will be clarified below by referring to the drawings.

[0017] [Figure 1] This is a schematic diagram of the cross-sectional structure of a conventional magnetron sputtering machine. [Figure 2] This is a schematic diagram of the cross-sectional structure of a semiconductor process equipment according to an embodiment of the present invention. [Figure 3] Figure 2 is a schematic, enlarged view of a partial structure of semiconductor process equipment. [Figure 4] Figure 2 is a schematic diagram of the base structure of semiconductor process equipment. [Figure 5]It is a structural schematic diagram of the deposition ring of the semiconductor process equipment shown in FIG. 2. [Figure 6] It is a structural schematic diagram of the assembly structure between the base and the deposition ring of the semiconductor process equipment shown in FIG. 2. [Figure 7] It is a structural schematic diagram of the first positioning boss of the deposition ring shown in FIG. 5. [Figure 8] It is a structural schematic diagram of the cover ring of the semiconductor process equipment shown in FIG. 2. [Figure 9] It is a structural schematic diagram of the buckle groove of the deposition ring shown in FIG. 5. [Figure 10] It is a structural schematic diagram of the buckle of the semiconductor process equipment shown in FIG. 3.

Embodiments for Carrying out the Invention

[0018] Hereinafter, the technical solution of the embodiments of the present application will be clearly and completely described with reference to the drawings. As is clear, the described embodiments are only some of the embodiments of the present application, not all of them. All other embodiments obtained by those skilled in the art without creative labor based on the embodiments of the present application belong to the protection scope of the present application. The following embodiments and their technical features can be combined with each other as long as they do not conflict.

[0019] Currently, in the semiconductor manufacturing process, the technology of using aluminum and aluminum alloys as interconnecting lines is widely used in the chip manufacturing metallization process. A common manufacturing process is the magnetron sputtering method. As shown in FIG. 1, a typical magnetron sputtering device has a reaction chamber 10. On the upper part of the reaction chamber 10, a semiconductor process assembly 20 for magnetron sputtering is provided. Below the reaction chamber 10, a placement device for placing the wafer 40 is provided. The placement device mainly includes a base 31, a deposition ring 32, and a cover ring 33. The bottom surface of the deposition ring 32 is flat and is directly arranged on the base 31. On the upper surface, grooves are formed for depositing reactants generated in the magnetron sputtering process, thereby preventing the surface of the base 31 from being contaminated by the reactants. In the prior art, since the connection location between the cover ring 33 and the deposition ring 32 is close to the above-mentioned grooves, when the magnetron sputtering process continues for a certain period, as the reactants deposited in the grooves continue to increase, a sticking phenomenon occurs at the connection location between the cover ring 33 and the deposition ring 32. As a result, when the cover ring 33 is lifted, the deposition ring 32 also rises in conjunction, and the deposition ring 32 falls off. Also, since the inner diameter of the deposition ring 32 is generally smaller than that of the wafer 40, the deposition ring 32 that rises in conjunction simultaneously raises the wafer 40, causing failures in wafer transfer and wafer breakage phenomena.

[0020] In view of the above situation, in order to improve the problem that the conventional placement device is prone to sticking phenomena during the magnetron sputtering process, which causes problems such as the falling off of the deposition ring, failures in wafer transfer, and wafer breakage phenomena, it is necessary to provide a solution for a new placement device.

[0021] As shown in Figures 2 to 4, in one embodiment, the embodiment of the present application provides semiconductor process equipment comprising a reaction chamber 100 having a sealed space, a mounting device 200, and a semiconductor process assembly 300, the mounting device 200 and the semiconductor process assembly 300 being housed within the sealed space, respectively. The mounting device 200 may specifically include a base 210, a deposition ring 220, and a covering ring 230. The base 210 may specifically include a first surface 2111 and a second surface 2121, the first surface 2111 being used to mount a wafer 400, the height of the second surface 2121 being lower than the height of the first surface 2111, and the second surface 2121 being positioned around the first surface 2111. The deposition ring 220 may specifically include an upper surface on which an annular groove 221 is formed and a lower surface covering the second surface 2121, and is used to prevent the second surface 2121 from being contaminated by reactants during the semiconductor processing of the wafer 400. The covering ring 230 is specifically used to shield the gap between the base 210 and the lining 110 of the reaction chamber 100 of the semiconductor process equipment, thereby preventing reactants from contaminating the lower region of the reaction chamber 100. The outer ring portion of the covering ring 230 is supported on the lining 110 of the reaction chamber 100 of the semiconductor process equipment, and the inner ring portion of the covering ring 230 is provided to cover the outer ring portion of the deposition ring 220. Multiple annular protrusions and multiple annular recesses are provided between the inner ring portion of the covering ring 230 and the outer ring portion of the deposition ring 220, thereby forming a labyrinth passage between the connection point between the covering ring 230 and the deposition ring 220 and the annular groove 221.

[0022] The semiconductor process equipment may specifically be a magnetron sputtering machine, in which case the semiconductor process assembly 300 is a magnetron sputtering assembly, and the magnetron sputtering assembly may specifically include a magnetron system 310, a target material 320, and an upper electrode system (not shown), the target material 320 being located above the mounting device 200, a sealed chamber defined above the reaction chamber 100, and the sealed chamber can be filled with deionized water. When performing the magnetron sputtering process on a wafer 400 on the mounting device 200, the DC power supply of the upper electrode system applies a bias to the target material 320, creating a negative bias relative to the grounded chamber, thereby causing a process gas such as argon gas to discharge and generate plasma, and the negative bias simultaneously attracts positively charged argon ions to the target material 320. The energy of the argon ions is sufficiently high, and when the magnetic field of the magnetron system 310 strikes the target material 320, the metal atoms escape from the surface of the target material 320 and are deposited on the wafer 400 by diffusion, thereby completing the magnetron sputtering process of the wafer 400. To those skilled in the art, the semiconductor process equipment may be equipment that performs other semiconductor process processing on the wafer 400, in which case the semiconductor process processing assembly 300 can be replaced with an assembly capable of performing the corresponding semiconductor process processing.

[0023] As shown in Figures 2 and 3, in this embodiment, multiple annular protrusions and multiple annular recesses are provided between the inner ring portion of the covering ring 230 and the outer ring portion of the deposit ring 220. The purpose of forming a labyrinth passage between the connection point between the covering ring 230 and the deposit ring 220 and the annular groove 221 is mainly to increase the difficulty for the reactants deposited in the annular groove to reach the connection point and to reduce the probability of adhesion occurring at the connection point. Therefore, the number of multiple annular protrusions and multiple annular recesses can be increased as much as possible depending on the actual installation environment. The heights of the multiple annular protrusions and the depths of the multiple annular recesses are different, and by leaving a certain gap between the highest point of the annular protrusion and the lowest point of the corresponding annular recess, the labyrinth passage is better formed. Depending on the actual needs, the multiple annular protrusions may all be provided on the upper surface of the outer ring portion of the deposit ring 220, all be provided on the lower surface of the inner ring portion of the covering ring 230, or some may be provided on the upper surface of the outer ring portion of the deposit ring 220 and the rest on the lower surface of the inner ring portion of the covering ring 230. Similarly, the multiple annular recesses may, depending on the actual requirements, be provided on the upper surface of the outer ring portion of the deposition ring 220, or on the lower surface of the inner ring portion of the covering ring 230, or some may be provided on the upper surface of the outer ring portion of the deposition ring 220 and the rest on the lower surface of the inner ring portion of the covering ring 230.

[0024] To better prevent the reaction material deposited in the annular groove 221 from reaching the connection point between the covering 230 and the deposit ring 220, the entrance to the labyrinth passage may be located specifically on the upper side of the outer wall of the annular groove 221, and the horizontal height of the entrance to the labyrinth passage is higher than the horizontal height of the connection point between the covering 230 and the deposit ring 220. Preferably, the inner ring portion of the covering may have an overhang structure, which shields a portion of the annular groove. For example, in Figure 3, the plurality of annular protrusions may specifically include a first annular protrusion 222 and a second annular protrusion 223 provided on the upper surface of the outer ring portion of the deposit ring 220, and the plurality of annular recesses may include a first annular recess 224 provided on the upper surface of the outer ring portion of the deposit ring 220, and a second annular recess 231, a third annular recess 232, and a third annular recess 233 provided on the lower surface of the inner ring portion of the covering 230. Specifically, the first annular projection 222 may be formed on the outer wall of the annular groove 221, that is, it may be provided integrally with the outer wall of the annular groove 221, forming a first-layer labyrinth barrier against reactants deposited in the annular groove 221 during the semiconductor process. The upper side (i.e., highest point) of the first annular projection 222 and the bottom wall (i.e., lowest point) of the corresponding second annular recess 231 are separated by a first predetermined distance, the height of the second annular projection 223 is lower than the height of the first annular projection 222, and the upper side (i.e., highest point) of the second annular projection 223 and the bottom wall (i.e., lowest point) of the corresponding third annular recess 232 are separated by a second predetermined distance, the third annular recess 233 is provided close to the connecting point, and together they form the labyrinth passage. Furthermore, the connection between the covering 230 and the deposition ring 220 is specifically a connection to the outermost edge of the deposition ring 220, and since the third annular recess 233 is provided close to this connection point, the covering 230 is specifically connected to the outermost edge of the deposition ring 220 via the outer wall of the third annular recess 233 (which can form certain protrusions), forming a gap passage of a certain length between the bottom wall (i.e., the lowest point) of the third annular recess 233 and the corresponding upper surface of the outer ring portion of the deposition ring 220. Thus, even if the reactants pass through the first labyrinth barrier, they still need to pass through a very long gap passage to reach the connection point, and in this way, a second labyrinth barrier is formed.

[0025] Thus, since a labyrinth passage is formed between the connection point between the covering 230 and the deposition ring 220 and the annular groove 221, the distance over which the reactants deposited in the annular groove 221 reach the connection point during the semiconductor processing process is greatly increased. Furthermore, the reactants must overcome multiple labyrinth barriers to reach the connection point, greatly increasing the difficulty of the reactants reaching the connection point. Therefore, the mounting apparatus of the present invention can effectively reduce the probability of adhesion occurring between the covering 230 and the deposition ring 220 during the semiconductor processing process.

[0026] In some examples, as shown in Figure 4, the base 210 includes a first cylinder 211 and a second cylinder 212, the first cylinder 211 and the second cylinder 212 being connected concentrically vertically, i.e., the first cylinder 211 and the second cylinder 212 being coaxially connected, the first cylinder 211 being located above the second cylinder 212, and the bottom radius of the first cylinder 211 being smaller than the bottom radius of the second cylinder 212, thereby forming a first surface 2111 and a second surface 2121 on the upper side of the base 210, respectively. In order to better place the wafer 400 on the first surface 2111, the diameter of the first surface 2111 may be smaller than the diameter of the wafer 400, and in order to meet the heating requirements when some semiconductor process equipment performs semiconductor process processing on the wafer 400, the base 210 can perform the corresponding heat processing by incorporating some conventional heating structures.

[0027] In some examples, as shown in Figures 4, 5, and 6, the inner ring of the deposition ring 220 and the outer wall of the first cylinder 211 are positioned by the one-to-one engagement of a plurality of first positioning bosses 225 and a plurality of first positioning grooves 2112. To those skilled in the art, the number of first positioning bosses 225 and the number of first positioning grooves 2112 can both be arbitrarily reduced as needed, as long as the number of each is equal. Furthermore, the plurality of first positioning bosses 225 may all be located on the inner circular side of the deposition ring 220, or all on the outer wall of the first cylinder 211, or some may be located on the inner circular side of the deposition ring 220 and the rest on the outer wall of the first cylinder 211, as needed. Similarly, the plurality of first positioning grooves 2112 may all be located on the inner circular side of the deposition ring 220, or all on the outer wall of the first cylinder 211, or some may be located on the inner circular side of the deposition ring 220 and the rest on the outer wall of the first cylinder 211, as needed. Taking the examples shown in Figures 4, 5, and 6, the number of first positioning bosses 225 and the number of first positioning grooves 2112 may each be three. In this case, all three first positioning bosses 225 are provided on the inner circular side of the deposition ring 220, and the three first positioning bosses 225 are distributed in an equilateral triangle pattern, thereby ensuring the stability of the final positioning. Correspondingly, all three first positioning grooves 2112 are provided on the outer wall of the first cylinder 211, and the three first positioning grooves 2112 also have a corresponding equilateral triangle distribution, thereby engaging each first positioning boss 225 within its corresponding first positioning groove 2112. Furthermore, to ensure the robustness of this engagement, each first positioning boss 225 may be a trapezoidal boss as shown in Figure 7, and correspondingly, each first positioning groove 2112 may be a trapezoidal groove that fits the trapezoidal boss, as shown in Figure 4.

[0028] In some examples, to ensure that the center of the covering ring 230 always aligns with the center of the deposition ring 220 and to avoid deviations in the process results, the inner ring portion of the covering ring 230 and the outer ring portion of the deposition ring 220 are positioned by the one-to-one engagement of a plurality of second positioning bosses 226 and a plurality of second positioning grooves 234, as shown in Figures 5, 6, and 8. To those skilled in the art, the number of second positioning bosses 226 and the number of second positioning grooves 234 can both be arbitrarily reduced as needed, as long as the number of each is equal. Alternatively, the plurality of second positioning bosses 226 may all be located on the upper surface of the outer ring portion of the deposition ring 220, or all be located on the lower surface of the inner ring portion of the covering ring 230, or some may be located on the upper surface of the outer ring portion of the deposition ring 220 and the rest on the lower surface of the inner ring portion of the covering ring 230, as needed. Similarly, the multiple second positioning grooves 234 may, depending on the actual requirements, all be provided on the upper surface of the outer ring portion of the deposition ring 220, all be provided on the lower surface of the inner ring portion of the covering ring 230, or some may be provided on the upper surface of the outer ring portion of the deposition ring 220 and the rest on the lower surface of the inner ring portion of the covering ring 230. Taking the examples shown in Figures 5, 6, and 8, the number of second positioning bosses 226 and the number of second positioning grooves 234 may specifically be three each, in which case all three second positioning bosses 226 are on the deposition ring 220 outside The three second positioning bosses 226 are provided on the upper surface of the ring portion and are arranged in an equilateral triangle pattern, thereby ensuring stability of the final positioning. Correspondingly, the three second positioning grooves 234 are all provided on the lower surface of the inner ring portion of the covering 230 and the three second positioning grooves 234 also have a corresponding equilateral triangle pattern, thereby engaging each second positioning boss 226 within its corresponding second positioning groove 234. Furthermore, to ensure the robustness of this engagement, each second positioning boss 226 may specifically be a conical boss as shown in Figure 6, and correspondingly, each second positioning groove 234 may specifically be a conical groove that fits the conical boss, as shown in Figure 4.

[0029] In some examples, as the duration of the semiconductor process (specifically, which may be a magnetron sputtering process) on the wafer 400 on the mounting device 200 increases, the amount of reactant deposited in the annular groove 221 also continues to increase. Considering that this increases the likelihood of the reactant reaching the connection point between the covering 230 and the deposition ring 220 through the labyrinth passage, as shown in Figures 2, 3, and 5, a plurality of buckle grooves 227 are further provided on the outer ring of the deposition ring 220, and the mounting device has a plurality of buckles 2 Further including 40, the outer ring portion of the deposit ring 220 and the base 210 are fastened together by the engagement of a plurality of buckles 240 and a plurality of buckle grooves 227 in a one-to-one correspondence. In this way, the engagement of the plurality of buckles 240 and a plurality of buckle grooves 227 in a one-to-one correspondence securely fastens the deposit ring 220 to the base 210, so that even if the covering ring 230 rises after the connection between the covering ring 230 and the deposit ring 220 becomes stuck, the deposit ring 220 will not move in conjunction with it. To those skilled in the art, the number of buckle grooves 227 can be arbitrarily reduced as needed, and furthermore, in order to securely fasten the deposit ring 220 onto the base 210, the number of buckle grooves 227 may specifically be three, and the three buckle grooves 227 will be distributed in an equilateral triangle. Furthermore, as shown in Figures 3, 9, and 10, the buckle 240 may specifically include a buckle rod 241, with a first hook 242 at one end for hooking into a corresponding buckle groove 227, and a second hook 243 at the other end for hooking into the bottom surface of the base 210. Thus, when assembling each buckle 240, first the first hook 242 is positioned in the corresponding buckle groove 227, then the buckle 240 is rotated around the upper end of the buckle rod 241, and the second hook 243 is used to hook into the bottom surface of the base 210, completing the assembly of the corresponding buckle 240.To further ensure the robustness of the assembly of the first hook 242 and to prevent the first hook 242 from falling out of the corresponding buckle groove 227, the buckle groove 227 may specifically be a T-shaped groove, and the first hook 242 may specifically be a T-shaped hook that fits into the T-shaped groove. Furthermore, to further strengthen the connection between the first hook 242 and the corresponding buckle groove 227, a socket cap may be provided at each end of the horizontal portion of the T-shaped hook.

[0030] Finally, the provision of three buckles 240 allows the load ring 220 to be securely fastened to the base 210, thereby limiting the vertical freedom of the load ring 220. However, there is still a possibility of circumferential movement and the possibility of the buckles 240 coming loose. Therefore, in some examples, as shown in Figures 2, 3, and 6, the load device 200 further includes a fixing ring 250 that is provided around the outer wall of the base 210 and locks the multiple buckles 240 to the outer wall of the base 210. Furthermore, a third hook 244 is provided at the other end of the buckle rod 241 for hooking the fixing ring. In this way, by positioning the fixing ring 250 within the third hook 244 of each buckle 240, the circumferential freedom of each buckle 240 is limited, and rotation and detachment of the buckles 240 are prevented.

[0031] In one embodiment, the embodiment of the present application further provides a mounting device for semiconductor process equipment, the structure and function of which can be specifically described by referring to the mounting device of the above embodiment, and a detailed description is omitted here.

[0032] Although this application is shown and described in one or more embodiments, those skilled in the art will be able to conceive of equivalent variations and modifications based on their reading and understanding of this specification and the drawings. This application includes all such variations and modifications and is limited to the claims only. In particular, with respect to the various functions performed by the assemblies described herein, the terminology used to describe such assemblies is intended to correspond to any assembly (unless otherwise indicated) that performs a specified function of the assembly (e.g., functionally equivalent) even if it is not structurally equivalent to a known structure that performs the function in the exemplary embodiments described herein.

[0033] In other words, the above are merely embodiments of the present application and do not limit the scope of the patent. Equivalent structural or process transformations, such as combinations of technical features between the embodiments or direct or indirect applications in other related technical fields, performed using the contents of the specification and drawings of the present application, are also included within the scope of the patent protection of the present application.

[0034] Furthermore, in the description of this application, directions or positional relationships indicated by terms such as "center," "vertical," "horizontal," "length," "width," "thickness," "top," "bottom," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inside," and "outside" are directions or positional relationships based on the illustrations and are merely for the convenience and simplification of the description of this application. They do not indicate or imply that such devices or elements necessarily have a specific direction or are configured and operated in a specific direction, and therefore should not be understood as limiting this application. Also, structural elements with the same or similar characteristics may be marked with the same or different symbols in this application. Furthermore, the terms "first" and "second" are used for explanatory purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features being indicated. Accordingly, features limited by "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, unless otherwise clearly and specifically limited, "multiple" means two or more.

[0035] In this application, the term “exemplary” means “used as an example, illustration, or explanation.” In this application, any embodiment described as “exemplary” should not necessarily be construed as being preferable or advantageous to other embodiments. This application provides the above description so that a person skilled in the art can implement and use this application. In the above description, each detail is provided for explanatory purposes. A person skilled in the art should understand that the application can be implemented without using these particular details. In other embodiments, known structures and processes are not detailed to avoid obscuring the description of the application with unnecessary details. Thus, this application is not limited to the embodiments shown, but will conform to the broadest scope consistent with the principles and features disclosed herein.

Claims

1. It includes a first surface and a second surface, the first surface being used for placing a wafer, the height of the second surface being lower than the height of the first surface, and the second surface being a base provided around the first surface. A deposit ring including an upper surface in which an annular groove is formed and a lower surface covering the second surface, A covering ring is provided, the outer ring portion of the covering ring is supported on the lining of the reaction chamber of the semiconductor process equipment, the inner ring portion of the covering ring is provided to cover the outer ring portion of the deposition ring, and a plurality of annular protrusions and a plurality of annular recesses are provided on the two opposing surfaces of the inner ring portion of the covering ring and the outer ring portion of the deposition ring, thereby forming a labyrinth passage between the connection point between the covering ring and the deposition ring and the annular groove. The outer ring portion of the stacking ring is further provided with a plurality of buckle grooves, and the mounting device further includes a plurality of buckles, and the outer ring portion of the stacking ring and the base are fastened together by the plurality of buckles and the plurality of buckle grooves engaging in a one-to-one correspondence. The buckle includes a buckle rod, one end of which is provided a first hook for hooking onto the corresponding buckle groove, and the other end of which is provided a second hook for hooking onto the bottom surface of the base. A mounting device for semiconductor process equipment, further comprising a fixing ring provided around the outer wall of the base for locking a plurality of buckles to the outer wall of the base.

2. The heights of the multiple annular protrusions are different, and the depths of the multiple annular recesses are different. The multiple annular protrusions are all provided on the upper surface of the outer ring portion of the deposition ring, and the multiple annular recesses are all provided on the lower surface of the inner ring portion of the covering ring, or The multiple annular protrusions are all provided on the lower surface of the inner ring portion of the covering ring, and the multiple annular recesses are all provided on the upper surface of the outer ring portion of the deposition ring, or The mounting device according to claim 1, characterized in that a portion of each of the multiple annular protrusions and the multiple annular recesses is provided on the upper surface of the outer ring portion of the deposition ring and a portion of each is provided on the lower surface of the inner ring portion of the covering ring.

3. The mounting device according to claim 1, characterized in that the inner ring portion of the covering has an overhang structure, and the overhang structure shields a part of the annular groove.

4. The mounting device according to claim 1, characterized in that the base includes a first cylinder and a second cylinder, the first cylinder and the second cylinder are coaxially connected, the first cylinder is located above the second cylinder, the bottom radius of the first cylinder is smaller than the bottom radius of the second cylinder, so that a first surface and a second surface are formed on the upper side of the base, and the inner ring portion of the deposition ring and the outer wall of the first cylinder are positioned by a plurality of first positioning bosses and a plurality of first positioning grooves engaging in a one-to-one correspondence.

5. The mounting device according to claim 1, characterized in that the inner ring portion of the covering ring and the outer ring portion of the deposition ring are positioned by a plurality of second positioning bosses and a plurality of second positioning grooves engaging in a one-to-one correspondence.

6. The mounting device according to claim 1, characterized in that the buckle groove is a T-shaped groove, and the first hook is a T-shaped hook that fits into the T-shaped groove.

7. The mounting device according to claim 1, further characterized in that a third hook for hooking the fixing ring is provided at the other end of the buckle rod.

8. A semiconductor process apparatus comprising a mounting device according to any one of claims 1 to 7, a reaction chamber having a sealed space, and a semiconductor process assembly, wherein the mounting device and the semiconductor process assembly are housed within the sealed space.

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