Miniature accelerators, miniature mass spectrometers, and ion implanters

Abstract

To provide an accelerator and a mass spectroscope, which can be miniaturized and manufactured in a low cost, and are available by anyone.SOLUTION: In each of a mass spectroscope and an accelerator, which is structured by a plurality of substrates containing a first main substrate, a first upper substrate adhered onto an upper face of the first main substrate, and a first lower substrate adhered onto a lower face of the first main substrate, a penetration chamber is formed in the first main substrate, and is penetrated to the lower face of the first main substrate from the upper face of the first main substrate, a vertical direction (a Z direction) of the substrate surface is surrounded by an upper substrate and a lower substrate, and both sides which are a right angle direction with the Z direction and of a charged particle and a traveling direction (an X direction) of a charged particle are surrounded by the first main substrate, and both side faces which have a right angle direction (a Y direction) to the Z direction and the X direction are surrounded by the first main substrate. A central hole of a first main substrate side board, which is incident to the charged particle is opened, and the charged particle is incident to a mass analysis chamber or an acceleration chamber from the central hole formed on the first main substrate side board.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an accelerator using an accelerator and a method for manufacturing the same. For example, it relates to a synchrotron, a microtron, a linear accelerator, a mass spectrometer, and an ion implanter. [Background technology]

[0002] Accelerators are used in a variety of fields, including colliding protons to understand the formation of matter, using synchrotron radiation generated when accelerated particle trajectories are bent to create fine patterns, implanting ions into semiconductor surfaces to create active layers and modify surfaces, mass spectrometry of ions emitted from materials to investigate their composition and structure, and using charged particles to destroy cancer cells in the treatment of human diseases. However, the motion of accelerated particles is affected by supervacuum (10 -3 ~10 -6 A minimum torr (or less) is required, and for high-speed accelerating particles, a fairly large cavity (e.g., 500 mm or more) is necessary. To accelerate, bend, and focus the accelerating particles passing through this cavity, electric field generators and magnetic field generators that generate large electric and magnetic fields are required. For example, electrostatic lenses are used to accelerate charged particles, but several electrostatic lenses (accelerating electrodes) must be precisely parallel and the holes through which the charged particles pass must be precisely aligned, so electrodes of a fairly large size (e.g., hole size of 20 mm or more in diameter, electrode size of 300 mm or more in diameter) are required, and these must be placed inside a cavity in ultra-high vacuum. Consequently, the vacuum system becomes large, and a fairly large and high-performance vacuum pump must be used. Furthermore, the magnetic field generator cannot be made small enough to fit inside the cavity (vacuum line), and there are also side walls surrounding the cavity, so the distance to the target charged particle becomes long (e.g., 500 mm or more), requiring a large magnetic field generator. Even if such a large magnetic field generator is made smaller using electromagnets made of superconducting materials, the cooling system will become larger, so the overall size of the magnetic field generator will hardly change. In recent years, there has been a plan to build the International Linear Collider (ILC) in Japan. However, the construction would cost over 1 trillion yen, and the maintenance cost would also be 50 billion yen per year. Therefore, the decision to build it has not been made yet.

[0003] Furthermore, in recent years, there has been a growing call for food safety. However, it is difficult for individuals to easily and quickly know the substances contained in food and drinking water. It is also difficult for individuals to grasp the extent to which environmental contamination, such as that caused by the Fukushima nuclear power plant accident, has spread to nearby areas. Without knowing, people are contaminated by radiation and toxic substances, and often, when they notice, the situation has become serious. Currently, there is no portable precision analysis device that is small, light, and can be carried. Moreover, due to the high price of the device, it is difficult to obtain. Crime has also become more complex, and it takes a long time to identify the cause and the perpetrator. However, if rapid analysis can be carried out at the crime scene, many cases can be quickly solved. For example, in recent years, accidents and crimes caused by illegal drugs have become a problem. The reason why dealers cannot be caught up is that the actual drugs cannot be seized at the scene. Therefore, there is a need for a measuring device that can accurately analyze on-site with high precision. In fields where scientific research is advanced while conducting on-site investigations in archaeology, environmental science, etc., if there is a portable high-precision mass spectrometry, research will advance by leaps and bounds. Also, if the device is inexpensive and small, it will be possible to process the analysis of a large number of samples in a short time.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] Conventional accelerators use large-scale electric and magnetic field generators to accelerate, bend, and focus charged particles. The technology required to precisely align these components is quite advanced, and since accelerators are manufactured by hand, it has been impossible to produce them in large quantities, cheaply, and quickly. Furthermore, we will provide a mass spectrometer that is ultra-compact, lightweight, and portable, allowing for simple and rapid measurements on-site. Moreover, the price will be significantly lower than conventional products, while maintaining the same or even higher measurement accuracy. Specifically, using semiconductor and MEMS technology, we will manufacture a high-performance, high-precision, ultra-compact mass spectrometer using a 4-8 inch substrate (larger substrates are also acceptable), incorporating a sample supply unit, ionization unit, extraction electrode unit, mass spectrometry unit (double-focusing type), and ion detection unit within the substrate. Because it is ultra-compact, lightweight, portable, and allows for on-site analysis, it can be used for rapid on-site measurements of radioactive elements such as 137Cs, as well as for the analysis of food and drinking water at home. Since the cost will be 1 / 10 to 1 / 100 of conventional models, it will realize an era where one mass spectrometer per person is available, contributing to a safer and more secure society. [Means for solving the problem]

[0006] In this invention, a through-chamber formed in a semiconductor substrate such as a Si substrate is sealed above and below with an insulating substrate such as a glass substrate or a quartz substrate, and the through-chamber is used as a passage for charged particles such as accelerated ions. Furthermore, components necessary for accelerators and mass spectrometers, such as extraction electrodes, accelerating electrodes, accelerating cavities, quadrupole electrodes, and quadrupole traps, are formed within the through-chamber using an LSI process. Specifically, the present invention has the following features. (1) The present invention relates to a mass spectrometer comprising a plurality of substrates including a first main substrate, a first upper substrate attached to the upper surface of the first main substrate, and a first lower substrate attached to the lower surface of the first main substrate, wherein the mass spectrometer is... A mass spectrometer characterized by a through-chamber formed in the first main substrate, extending from the upper surface to the lower surface of the first main substrate, with the upper and lower substrates in the direction perpendicular to the substrate surface (Z direction), the side plates of the first main substrate on both sides perpendicular to the Z direction and in the direction of charged particle propagation (X direction), and the first main substrate on both sides perpendicular to the Z and X directions (Y direction), the first main substrate side plate into which the charged particles enter has a central hole, and the charged particles enter the mass spectrometry chamber through the central hole formed in the first main substrate side plate. The first main substrate is characterized by being an insulating substrate, a semiconductor substrate, a conductive substrate, or a laminated substrate thereof. The upper and lower substrates are characterized by being glass substrates, quartz substrates, plastic substrates, alumina substrates, AlN substrates, ceramic substrates, polymer substrates, or laminates thereof. When the main substrate is an insulating substrate, it is characterized by being a glass substrate, quartz substrate, plastic substrate, alumina substrate, AlN substrate, ceramic substrate, polymer substrate, or a laminate of these. If the main substrate is a semiconductor substrate, it is characterized by being a Si substrate, SiC substrate, C substrate, GaAS substrate, InP substrate, GaN substrate, CdS substrate, binary compound semiconductor, ternary compound semiconductor, or a laminated substrate thereof. If the main substrate is a semiconductor substrate, or if it is a conductive substrate, it is characterized by being made of Cu, Al, Ti, Zn, Fe, an alloy containing these metals, or a laminated substrate made of these metals.

[0007] (2) This invention relates to a mass spectrometry laboratory, which is a quadrupole mass spectrometry laboratory, and in the mass spectrometry laboratory, The upper substrate has two quadrupole electrodes attached to or formed on its lower surface and two quadrupole electrodes attached to or formed on its upper surface, Contact wiring formed on the upper substrate (upper substrate contact wiring) connected to two quadrupole electrodes located on the lower surface of the upper substrate, and electrode wiring formed on the upper surface of the upper substrate (upper substrate upper surface electrode wiring) connected to the upper substrate contact wiring, and The lower substrate has contact wiring (lower substrate contact wiring) formed on the lower substrate that connects to two quadrupole electrodes arranged on the upper surface of the lower substrate, and electrode wiring (lower substrate bottom electrode wiring) formed on the lower surface of the lower substrate that connects to the lower substrate contact wiring, A mass spectrometer characterized by applying a high-frequency voltage and / or a DC voltage from the upper electrode and wiring and the lower electrode and wiring, The device is characterized by the fact that, among the two quadrupole electrodes positioned on the underside of the upper substrate and the two quadrupole electrodes positioned on the upper surface of the lower substrate, the distance between two non-adjacent quadrupole electrodes is approximately the same, and the midpoints between them approximately coincide. The device is characterized in that, among the two quadrupole electrodes positioned on the underside of the upper substrate and the two quadrupole electrodes positioned on the upper surface of the lower substrate, the distance between two adjacent quadrupole electrodes is approximately the same.

[0008] (3) The present invention is characterized in that a second main substrate is attached on or above an upper substrate (first upper substrate), a second upper substrate (second upper substrate) is attached on the second main substrate, a through chamber (second through chamber) is formed in the second main substrate above the through chamber (first through chamber) and penetrates from the second upper substrate to the first upper substrate, an opening is provided in a part of the first upper substrate between the first and second through chambers, the opening is formed between two quadrupole electrodes arranged on the lower surface of the first upper substrate, electrodes and wiring formed on the first upper substrate that are connected to the quadrupole electrodes arranged on the lower surface of the first upper substrate are connected to wiring (second wiring) formed on the side of the second through chamber, the second wiring is connected to electrodes and wiring formed on the lower surface of the second upper substrate, the electrodes and wiring formed on the lower surface of the second upper substrate are connected to contact wiring (second upper substrate contact wiring) formed on the second upper substrate, and the second upper substrate contact wiring is connected to electrodes and wiring (second upper electrode and wiring) formed on the second upper substrate. A third main substrate is attached to the lower surface or below the lower substrate (first lower substrate), and a second lower substrate (second lower substrate) is attached to the lower surface of the third main substrate. Below the through-chamber (first through-chamber), a through-chamber (third through-chamber) is formed in the third main substrate, penetrating from the second lower substrate to the first lower substrate. An opening is provided in a part of the first lower substrate between the first and third through-chambers, and this opening is formed between two quadrupole electrodes arranged on the upper surface of the first lower substrate. The electrode and wiring formed on the lower surface of the first lower substrate, which are connected to the quadrupole electrode located on the upper surface of the first lower substrate, are connected to the wiring (third wiring) formed on the side of the third through-chamber, the third wiring is connected to the electrode and wiring formed on the upper surface of the second lower substrate, the electrode and wiring formed on the upper surface of the second lower substrate are connected to the contact wiring (second lower substrate contact wiring) formed on the second lower substrate, and the second lower substrate contact wiring is connected to the electrode and wiring (second lower electrode and wiring) formed on the lower surface of the second upper substrate. A mass spectrometer characterized by applying a high-frequency voltage and / or DC voltage from the second upper electrode / wiring and the second lower electrode / wiring, The second upper substrate and the second lower substrate are characterized by being a glass substrate, quartz substrate, plastic substrate, alumina substrate, AlN substrate, ceramic substrate, polymer substrate, or a laminate of these. When the second and third main substrates are insulating substrates, they are characterized by being glass substrates, quartz substrates, plastic substrates, alumina substrates, AlN substrates, ceramic substrates, polymer substrates, or laminates thereof. When the second and third main substrates are semiconductor substrates, they are characterized by being Si substrates, SiC substrates, C substrates, GaAS substrates, InP substrates, GaN substrates, CdS substrates, binary compound semiconductors, ternary compound semiconductors, or laminates thereof. If the second and third main substrates are semiconductor substrates, or if they are conductive substrates, they are characterized by being made of Cu, Al, Ti, Zn, Fe, alloys containing these metals, or laminated substrates thereof.

[0009] (4) The present invention relates to a mass spectrometer characterized in that the mass spectrometer is a quadrupole mass spectrometer, one quadrupole electrode is positioned on the upper surface of an upper substrate attached to the upper part of the mass spectrometer, one quadrupole electrode is positioned on the lower surface of a lower substrate attached to the lower part of the mass spectrometer, and one quadrupole electrode is positioned in each of the left and right through-chambers formed in the main substrate provided next to the mass spectrometer. The left and right through-chambers formed in the main substrate next to the mass spectrometry chamber are characterized by the presence of a substrate side wall between them and the mass spectrometry chamber. The quadrupole electrode is characterized by being a rod material, which is attached to predetermined locations on the upper substrate, lower substrate, and main substrate. The quadrupole electrode is characterized by being a conductive film electrode that is laminated onto an upper or lower substrate by CVD, PVD, plating, electroforming, screen printing, squeegeeing, spin coating, dispensing, or a combination thereof, and processed into a predetermined shape. The mass spectrometry chamber is a quadrupole mass spectrometry chamber, characterized in that two quadrupole electrodes are arranged on the lower surface of an upper substrate attached to the upper part of the mass spectrometry chamber, on the side facing the mass spectrometry chamber, and two quadrupole electrodes are arranged on the upper surface of a lower substrate attached to the lower part of the mass spectrometry chamber, on the side facing the mass spectrometry chamber. A through-chamber (second through-chamber) is formed above an upper substrate (first upper substrate) to which two quadrupole electrodes are attached or formed, and a second upper substrate is attached to the upper part of the second through-chamber. A portion of the first upper substrate between the mass spectrometry chamber (first through-chamber) and the second through-chamber is removed, and the pressures in the first and second through-chambers are approximately the same. A second lower substrate is formed below a lower substrate (first lower substrate) to which two quadrupole electrodes are attached or formed, and a third through-chamber is formed below the third through-chamber. The second lower substrate is attached to the lower part of the third through-chamber, and a portion of the first lower substrate located between the mass spectrometry chamber (first through-chamber) and the third through-chamber is removed, so that the pressures in the first and third through-chambers are approximately the same. (5) The present invention is characterized in that the mass spectrometry chamber includes one quadrupole electrode (first quadrupole electrode) attached to or formed on the lower surface of the upper substrate, one quadrupole electrode (second quadrupole electrode) attached to or formed on the upper surface of the lower substrate, a portion of the substrate on one side of the mass spectrometry chamber extending in the Y direction within the mass spectrometry chamber, and one quadrupole electrode (third quadrupole electrode) attached to or formed on the upper surface of the substrate on the extended side, and a portion of the substrate on the other side of the mass spectrometry chamber extending in the Y direction within the mass spectrometry chamber, and one quadrupole electrode (fourth quadrupole electrode) attached to or formed on the upper surface of the substrate on the extended side, The upper substrate has contact wiring (first upper substrate contact wiring) connected to the first quadrupole electrode and electrode wiring (first upper substrate electrode wiring) connected to the first contact wiring on its upper surface. The lower substrate has contact wiring (first lower substrate contact wiring) connected to the second quadrupole electrode and electrode wiring (first lower substrate electrode wiring) connected to the second contact wiring on its lower surface. The side substrate to which the third quadrupole electrode is attached or formed has wiring that connects to the third quadrupole electrode, and this wiring is connected to wiring formed on the side of the main substrate, and further wiring formed on the side is connected to wiring formed on the upper substrate or lower substrate, and further wiring is connected to contact wiring (second upper substrate contact wiring or second lower substrate contact wiring) formed on the upper substrate or lower substrate, and further the second upper substrate contact wiring or second lower substrate contact wiring is connected to electrode wiring (second upper substrate electrode wiring or second lower substrate electrode wiring) formed on the upper surface of the upper substrate or the lower surface of the lower substrate.

[0010] (6) The present invention is characterized in that a through chamber (second through chamber) is formed above the upper substrate (first upper substrate), the second upper substrate is attached to the upper part of the second through chamber, a portion of the first upper substrate located between the mass spectrometry chamber (first through chamber) and the second through chamber is removed, and the pressures in the first and second through chambers are approximately the same. A through-chamber (third through-chamber) is formed below the aforementioned lower substrate (first lower substrate), the second lower substrate is attached to the lower part of the third through-chamber, and a portion of the first lower substrate located between the mass spectrometry chamber (first through-chamber) and the third through-chamber is removed, characterized in that the pressures in the first and third through-chambers are approximately the same. The mass spectrometry laboratory is a quadrupole mass spectrometry laboratory, and in the mass spectrometry laboratory, The upper substrate has a quadrupole electrode (first quadrupole electrode) attached to or formed on its lower surface and a quadrupole electrode (third quadrupole electrode) attached to or formed on its upper surface, Contact wiring (upper substrate contact wiring) formed on the upper substrate that connects to the quadrupole electrode (first quadrupole electrode) positioned on the lower surface of the upper substrate, and electrode wiring (upper substrate upper electrode wiring) formed on the upper surface of the upper substrate that connects to the upper substrate contact wiring, and The lower substrate has contact wiring (lower substrate contact wiring) formed on the lower substrate that connects to a quadrupole electrode (third quadrupole electrode) arranged on the upper surface of the lower substrate, and electrode wiring (lower substrate lower surface electrode wiring) formed on the lower substrate that connects to the lower substrate contact wiring, The main substrate has quadrupole electrodes (second quadrupole electrode and fourth quadrupole electrode) formed on two sides in the Y direction, The second quadrupole electrode and the fourth quadrupole electrode have contact wiring formed on the upper substrate and / or the lower substrate, and electrode wiring formed on the upper surface of the upper substrate and / or the lower surface of the lower substrate (upper surface electrode wiring and / or lower surface electrode wiring of the lower substrate). The method is characterized by applying a high-frequency voltage and / or a DC voltage from the upper surface electrodes and wiring of the upper substrate and the lower surface electrodes and wiring of the lower substrate.

[0011] (7) The present invention is characterized in that the second and fourth quadrupole electrodes are conductive films laminated in through chambers formed in the main substrate, and a portion of the conductive film is a plated film. The mass spectrometry chamber is of the magnetic field application type, and is characterized by the fact that the trajectory of charged particles is changed by the generation of a magnetic field perpendicular to the substrate surface of the main substrate, using one or more coils positioned above the upper substrate attached to the upper part of the main substrate forming the mass spectrometry chamber and / or one or more coils positioned below the lower substrate attached to the lower part of the main substrate forming the mass spectrometry chamber. The mass spectrometry chamber is of the magnetic field application type, and is characterized by the fact that a magnetic field perpendicular to the substrate surface of the main substrate is generated by electromagnets placed on the upper side of the upper substrate attached to the upper part of the main substrate forming the mass spectrometry chamber and / or on the lower side of the lower substrate attached to the lower part of the main substrate, thereby changing the trajectory of charged particles. One or more coils positioned on the upper side of the upper substrate and / or the lower side of the lower substrate are characterized in that they are formed by lamination on the second main substrate. The charged particles are emitted from a charged particle extraction chamber or a charged particle acceleration chamber to a mass spectrometry chamber, and a substrate side wall plate (front substrate side wall plate) with a central hole is placed between the charged particle extraction chamber or the charged particle acceleration chamber and the mass spectrometry chamber, and the charged particles are emitted into the mass spectrometry chamber through the central hole of the front substrate side wall plate. Charged particles exiting the mass spectrometry chamber are detected as ions in an ion detection chamber, which is a through-chamber formed in the main substrate. A substrate side wall plate (rear substrate side wall plate) with a central hole is positioned between the mass spectrometry chamber and the ion detection chamber, and the charged particles are emitted towards the ion detection chamber through the central hole in the rear substrate side wall plate. The charged particles are characterized by being bent in a 360-degree direction by a magnetic field, and the ion detection chambers are characterized by being arranged in multiple locations within a 360-degree region.

[0012] (8) The present invention is characterized in that the mass spectrometry chamber is a double-focusing type with an additional electric field application type, and the region through which charged particles pass in the electric field application type is formed in the main substrate and includes a through chamber (electric field application type through chamber) that has a fan shape (fan-shaped region through chamber) surrounded by the upper substrate on the top surface (Z direction), the lower substrate on the bottom surface (Z direction), and the side surface (Y direction) of the main substrate, and the X direction of the electric field application type through chamber is surrounded by a substrate side wall plate having a central hole, and charged particles enter through the central hole of one substrate side wall plate, the trajectory of the charged particles is bent in the electric field application type through chamber and exits through the central hole of the other substrate side wall plate, and the electric field application type through chamber is characterized in that the central trajectory has radius R0 and central angle α, and electrodes are formed on both sides of the main substrate facing each other at a certain distance d0 from the central trajectory, and charged particles are bent by the electric field generated by the voltage applied to the electrodes formed on both sides. The side electrodes in the electric field applied through-chamber are characterized by having a conductive film laminated by CVD or PVD, with a plating film further laminated on top. The contact wiring connecting to the side electrodes is formed on an upper substrate attached to the upper surface of the electric field applied through chamber, and is connected to electrodes and wiring formed on the upper surface of the upper substrate, and / or is formed on a lower substrate attached to the lower surface of the electric field applied through chamber, and is connected to electrodes and wiring formed on the lower surface of the lower substrate.

[0013] (9) The ICR chamber, into which charged particles enter and undergo cyclotron motion, is characterized by the following features: a substrate sidewall plate with a central hole that serves as the entry point for charged particles from the ion source (extraction electrode substrate sidewall plate); a substrate sidewall located in the direction of particle propagation, facing the extraction electrode substrate sidewall plate, and colliding with the cyclotron-moving charged particles (trap electrode substrate sidewall); an upper substrate attached to the top of the ICR chamber; a lower substrate attached to the bottom of the ICR chamber; and two substrate sidewalls (receiver electrode substrate sidewalls) approximately parallel to the direction of particle propagation. The surface of the extraction electrode substrate sidewall plate has a conductive film electrode formed thereon, which serves as an extraction electrode that draws charged particles from the central hole into the ICR chamber; the surface of the trap electrode substrate sidewall has a conductive film electrode formed thereon, to which a voltage that traps charged particles is applied; and the upper and lower substrates have conductive film electrodes formed thereon, to which a voltage that excites charged particles is applied. In the ICR chamber, a magnetic field is applied that is parallel to the direction from the extraction electrode to the trap electrode, which is the direction of movement of the charged particles. The coil wiring that generates the magnetic field is formed in close contact with the upper and lower substrates, and further, it is formed in close contact with the outer side surface of the main substrate, or is formed inside the main substrate, upper substrate, and lower substrate. A support substrate is attached to the upper substrate, a second upper substrate is attached to the support substrate, a support substrate is attached to the lower substrate, and a second lower substrate is attached to the support substrate. The coil wiring that generates the magnetic field is formed in close contact with the upper and lower substrates, and is also formed in close contact with the outer surface of the main substrate. Furthermore, the electrode wiring connecting the drawer electrode, trap electrode, two opposing ion excitation electrodes, and two opposing receiver electrodes within the ICR chamber is formed on the upper substrate and / or lower substrate and is located within the space enclosed by the upper substrate, support substrate, and second upper substrate, and / or within the space enclosed by the lower substrate, support substrate, and second lower substrate. In addition, these electrode wirings are connected to electrode wiring formed on the second upper substrate and / or second lower substrate, and the electrodes connected to the coil are connected to electrode wiring formed on the second upper substrate and / or second lower substrate.

[0014] (10) The charged particle generation chamber, which generates charged particles, includes two through-chambers (charged particle generation chambers 1 and 2) formed in the main substrate, with the upper part attached to the upper substrate and the lower part attached to the lower substrate. Charged particle generation chamber 1 and charged particle generation chamber 2 are adjacent chambers separated by a substrate side wall plate (first substrate side wall plate) having a central hole. A sample plate inserted through an opening in the upper substrate is placed in charged particle generation chamber 1. A laser beam is irradiated onto the sample attached to the sample plate from the opening in the upper substrate, causing the sample to decompose into particulate matter. The decomposed particles (decomposed particles) pass through the central hole in the substrate side wall plate and enter charged particle generation chamber 2. A single ionization beam, selected from laser light, electron beam, synchrotron radiation, and X-rays, is irradiated onto the decomposed particles present in charged particle generation chamber 2 from outside the upper or lower substrate, thereby generating charged particles. Next to the charged particle generation chamber 2 is a draw-out electrode / acceleration chamber separated by a substrate side wall plate (second substrate side wall plate) with a central hole. The extraction electrode / acceleration chamber is a through-chamber formed in the main substrate, with its upper part attached to the upper substrate and its lower part attached to the lower substrate. In the inner surface of the charged particle generation chamber 2, conductive film electrodes are formed on the upper substrate and the lower substrate, and / or the side surfaces of the first substrate sidewall plate, and / or the side surfaces of the second substrate sidewall plate, and / or the side surfaces of the other two substrate sidewalls. The conductive film electrode is connected to contact wiring formed on the upper substrate and / or lower substrate, and the contact wiring is further connected to conductive film electrode / wiring formed on the outer surface of the upper substrate and / or lower substrate. Charged particles having the same sign as the voltage applied to the conductive film electrode are attracted to the extraction electrode / acceleration chamber by the extraction electrode located in the extraction electrode / acceleration chamber, passing through the central hole in the second substrate side wall plate. The mass spectrometer is characterized in that charged particles that enter the extraction electrode / acceleration chamber exit the extraction electrode / acceleration chamber and enter the mass spectrometry chamber. In the charged particle generation chamber 1, the back surface of the sample plate is positioned in close contact with the side surface of the substrate side wall, the substrate side wall is provided with a central hole, and a cavity in the thickness direction of the main substrate, which is connected to an opening in the upper or lower substrate, is connected to the central hole, and the sample plate is adsorbed to the side surface of the substrate side wall by vacuum evacuation from the opening in the upper or lower substrate.

[0015] (11) The present invention provides a charged particle generation chamber that generates charged particles, comprising two through-chambers (charged particle generation chambers 1 and 2) formed in a main substrate whose upper part is attached to an upper substrate and whose lower part is attached to a lower substrate, and the charged particle generation chamber 1 and the charged particle generation chamber 2 are adjacent chambers separated by a substrate side wall plate (first substrate side wall plate) having a central hole. The sample plate inserted through the opening in the upper substrate is placed in the charged particle generation chamber 1. In the charged particle generation chamber 1, the back surface of the sample plate is positioned in close contact with the side surface of the substrate side wall, the substrate side wall is provided with a central hole, and a cavity in the thickness direction of the main substrate, which is connected to an opening in the upper or lower substrate, is connected to this central hole, and the sample plate is adsorbed to the side surface of the substrate side wall by vacuum evacuation from the opening in the upper or lower substrate. A conductive film is formed on the side surface of the substrate sidewall, and the conductive film formed on the side surface of the substrate sidewall is connected to a conductive film formed on the surface of the upper substrate and / or lower substrate on the side of the charged particle generation chamber 1, and the conductive film is further connected to contact wiring formed on the upper substrate and / or lower substrate, and the contact wiring is further connected to conductive film electrode wiring formed on the outer surface of the upper substrate and / or lower substrate. A voltage is applied from the conductive film electrode wiring to the conductive sample plate. When a laser beam is irradiated onto the sample attached to the sample plate from an opening in the upper substrate, the sample is broken down into particulate matter and charged particles are generated. Charged particles with the same sign as the charge on the sample plate are ejected from the sample plate. A substrate sidewall plate (third substrate sidewall plate) having a central hole is positioned facing the sample plate, a conductive film is formed on the surface of the third substrate sidewall plate, the conductive film formed on the surface of the upper substrate and / or lower substrate on the charged particle generation chamber 1 side is connected to a conductive film formed on the upper substrate and / or lower substrate, the conductive film is further connected to contact wiring formed on the upper substrate and / or lower substrate, and the contact wiring is further connected to conductive film electrode wiring formed on the outer surface of the upper substrate and / or lower substrate. A voltage opposite to the voltage applied to the sample plate is applied to the conductive film formed on the surface conductor of the third substrate sidewall plate from the conductive film electrode wiring, drawing out charged particles that have been ejected from the sample plate. The charged particles pass through the central hole formed in the third substrate side wall plate, and then through the central hole in the first substrate side wall plate to enter the charged particle generation chamber 2. Conductive film electrodes are formed on the inner surface of the charged particle generation chamber 2, on the upper substrate and the lower substrate, and / or the side surfaces of the first substrate sidewall plate, and / or the side surfaces of the second substrate sidewall plate, and / or the side surfaces of the other two substrate sidewalls, and / or the inner surface of the central hole of the first substrate sidewall plate. The conductive film electrode is connected to contact wiring formed on the upper substrate and / or lower substrate, and the contact wiring is further connected to conductive film electrode / wiring formed on the outer surface of the upper substrate and / or lower substrate. The voltage applied to the conductive film electrode is a voltage with the same sign as the charged particles, and by adjusting this voltage, the charged particles are focused and enter the adjacent chamber through the central hole in the substrate side wall plate (second substrate side wall plate) that separates the charged particle generation chamber 2 from the adjacent chamber. This mass spectrometer is characterized in that charged particles passing through the central hole in the second substrate side wall plate enter the mass spectrometry chamber.

[0016] (12) The present invention involves attaching an upper substrate to the upper surface of a main substrate and a lower substrate to the lower surface of the main substrate, with a through-chamber formed in the main substrate serving as an ionization chamber, having a central hole connected to the ionization chamber, and the central hole connecting to a vertical hole (perpendicular to the substrate surface) formed in the main substrate that is connected to an opening (sample introduction opening) in the upper substrate or the lower substrate. A conductive film (second conductive film) is formed on the inner surface of the central hole, a conductive film (first conductive film) is formed on the inner surface of the ionization chamber, the first and second conductive films are connected by a conductive film formed on the side surface of the main substrate of the ionization chamber, and the first conductive film is connected to the outer electrodes formed on the upper and / or lower substrates through contact wiring formed on the upper and / or lower substrates. The sample liquid or sample gas is introduced through the sample introduction opening, and then introduced into the ionization chamber as a spray gas at the outlet to the ionization chamber through the vertical and central holes. This ionization method is characterized by applying a voltage from external electrodes formed on the upper and / or lower substrates, thereby applying a voltage to a conductive film formed on the inner surface of the central hole, which in turn ionizes the gas (spray gas) ejected at the outlet of the ionization chamber. (13) The present invention involves attaching an upper substrate to the upper surface of a main substrate and a lower substrate to the lower surface of the main substrate, with a through-chamber formed in the main substrate serving as an ionization chamber, having a central hole connected to the ionization chamber, and the central hole connecting to a vertical hole (perpendicular to the substrate surface) formed in the main substrate that is connected to an opening (sample introduction opening) in the upper substrate or the lower substrate. The device is characterized by having parallel plate conductive film electrodes formed on the upper and lower parts of the inner surface of the central hole, or on two side surfaces of the inner surface of the central hole, with each parallel plate conductive film electrode connected to conductive films formed on the upper and lower substrates within the ionization chamber through conductive films formed on the side surfaces of the ionization chamber, and further connected to outer electrodes formed on the upper and / or lower substrates through contact wiring formed on the upper and / or lower substrates. The sample liquid or sample gas is introduced through the sample introduction opening, and then introduced into the ionization chamber as a spray gas at the outlet to the ionization chamber through the vertical and central holes. This ionization method is characterized by applying a high-frequency voltage from outer electrodes formed on the upper and / or lower substrates, thereby applying a high-frequency voltage to a conductive film formed on the inner surface of the central hole, which in turn ionizes the gas (spray gas) ejected at the outlet of the ionization chamber.

[0017] (14) The present invention is a mass spectrometer characterized by forming recesses and openings surrounding a portion of the ionization chamber in the main substrate, the upper substrate, and / or the lower substrate, and by passing a cooling or heating medium through these recesses, the ionization chamber and / or the central opening are cooled or heated. This method is characterized by heating the ionization chamber using a portion of the conductive film formed on the upper and / or lower substrates. It is characterized by heating the ionization chamber using a portion of the conductive film formed in the central pore. The invention is characterized by providing a conductive film electrode on the substrate sidewall plate or substrate sidewall facing the extraction electrode chamber, and applying a voltage with the same sign as the ions to the conductive film electrode to push the ions into the extraction electrode chamber. (15) In this invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate. One through-chamber formed in the main substrate serves as the ionization chamber, and a heating chamber, which is also a through-chamber formed in the main substrate, is provided next to the ionization chamber. The ionization chamber and the heating chamber are separated by a substrate side wall plate having a central hole (second central hole), or the ionization chamber and the heating chamber are the same through-chamber with no separating substrate side wall plate. It has a central hole (first central hole) that connects to the heating chamber, and the first central hole connects to a vertical hole (perpendicular to the substrate surface) formed in the main substrate that connects to an opening (sample introduction opening) in the upper substrate or lower substrate, A conductive film (second conductive film) is formed on the inner surface of the central hole, a conductive film (first conductive film) is formed on the inner surface of the heating chamber, the first and second conductive films are connected by a conductive film formed on the side surface of the heating chamber main substrate, and the first conductive film is connected to the outer electrodes formed on the upper and / or lower substrate through contact wiring formed on the upper and / or lower substrate. The sample liquid or sample gas is introduced through the sample introduction opening, and then introduced into the heating chamber as a spray gas at the outlet to the heating chamber through the vertical and central holes. The heating chamber is heated by applying a voltage from the outer electrodes formed on the upper and / or lower substrates, thereby passing a current through the first conductive film and heating the first conductive film. This ionization method is characterized by arranging pointed electrodes on an upper substrate and / or a lower substrate in an ionization chamber, connecting the pointed electrodes to outer electrodes formed on the upper substrate and / or lower substrate through contact wiring formed on the upper substrate and / or lower substrate, and ionizing the heated spray gas by discharging at the pointed electrodes by applying a voltage to the outer electrodes.

[0018] (16) The present invention is a mass spectrometer characterized by forming recesses and openings surrounding a portion of the ionization chamber in the main substrate, the upper substrate, and / or the lower substrate, and by passing a cooling or heating medium through these recesses, the ionization chamber and / or the central opening are cooled or heated. The ionization chamber is heated using a portion of the conductive film formed on the upper and / or lower substrate. This method is characterized by using a portion of the conductive film formed in the central pore to heat the ionization chamber. The invention is characterized by providing a conductive film electrode on the substrate sidewall plate or substrate sidewall facing the extraction electrode chamber, and applying a voltage with the same sign as the ions to the conductive film electrode to push the ions into the extraction electrode chamber. (17) In this invention, an upper substrate is attached to the upper surface of the main substrate, and a lower substrate is attached to the lower surface of the main substrate, and a through-chamber formed in the main substrate is used as an ionization chamber. It has a central hole (first central hole) that connects to the ion chamber, and the first central hole connects to a vertical hole (perpendicular to the substrate surface) formed in the main substrate that connects to an opening (sample introduction opening) in the upper substrate or lower substrate, This ionization method is characterized by introducing a sample solution through a sample introduction opening, passing it through vertical and central holes to form a matrix at the outlet to the ionization chamber, and then irradiating the matrix from the outside with a laser or high-speed atomic beam through an opening formed in the upper or lower substrate, resulting in the ionization of molecules in the matrix. An upper substrate is attached to the upper surface of the main substrate, and a lower substrate is attached to the lower surface of the main substrate, and the through-chamber formed in the main substrate is used as an ionization chamber. It has a central hole (first central hole) that connects to the ion chamber, and the first central hole connects to a vertical hole (perpendicular to the substrate surface) formed in the main substrate that connects to an opening (sample introduction opening) in the upper substrate or lower substrate, The sample solution is introduced through the sample introduction opening, and through the vertical and central holes, a matrix is ​​formed at the outlet to the ionization chamber. This ionization method is characterized by having a laser or fast atomic beam chamber placed next to the ionization chamber, and the laser or fast atomic beam chamber irradiating the matrix, resulting in the ionization of molecules in the matrix.

[0019] (18) The present invention is characterized in that a through-chamber formed in the main substrate adjacent to the ionization chamber is an extraction electrode chamber, the extraction electrode chamber and the ionization chamber are separated by a substrate sidewall plate having a central hole (second central hole), a conductive film electrode is formed on the side surface of the substrate sidewall facing the substrate sidewall plate, a voltage with the same sign as the ions is applied to the conductive film, and the generated ions are pushed out by the conductive film electrode and ejected through the second central hole of the substrate sidewall plate into the extraction electrode chamber. The invention is characterized by forming recesses and openings in the main substrate, upper substrate, and / or lower substrate that surround a portion of the ionization chamber, and by passing a cooling or heating medium through these recesses, the ionization chamber and / or central opening are cooled or heated. The method is characterized by forming a conductive film on the inner surface of the central hole and / or the inner surface of the through-chamber, and then passing an electric current through the conductive film to generate heat, thereby heating the central hole and / or the through-chamber. (19) In this invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate. A ring electrode is formed on the main substrate, and a through-chamber formed in the center of the ring electrode is an ion trap chamber. An upper electrode (ion trap upper electrode) formed on the upper substrate is positioned in the upper part of the ion trap chamber, and a lower electrode (ion trap lower electrode) formed on the lower substrate is positioned in the lower part of the ion trap chamber. The ring electrode is formed by creating a conductive film (ring conductive film electrode) in the ring shape of the main substrate, and the ring conductive film electrode is connected to an outer electrode formed on the upper substrate and / or lower substrate through contact wiring formed on the upper substrate and / or lower substrate. The upper and lower electrodes of the ion trap are connected to the outer electrodes formed on the upper and lower substrates through contact wiring formed on the upper and lower substrates, respectively. The ring electrode is a main substrate with a central hole, positioned between the ion trap chamber and one through-chamber, which is the ionization chamber or extraction electrode / accelerating electrode chamber, located next to the ion trap chamber, and also between the ion detection chamber and the other through-chamber, which is the ion trap chamber, located next to the ion trap chamber. One central hole connects the ionization chamber to the ion trap chamber, and the other central hole connects the ion trap chamber to the ion detection chamber. This ion trap type mass spectrometer is characterized by the application of a predetermined voltage to a ring conductive film electrode, an upper ion trap electrode, and a lower ion trap electrode, thereby trapping ions that enter the ion trap chamber from the ionization chamber or extraction electrode / acceleration electrode chamber through a central hole connected to the ion trap chamber, and further ejecting the trapped ions from the ion trap chamber through a central hole connected to the ion detection chamber to the ion detection chamber for detection.

[0020] (20) In this invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate. A ring electrode is formed on the main substrate, and a through-chamber formed in the center of the ring electrode is an ion trap chamber. An upper electrode (ion trap upper electrode) formed on the upper substrate is positioned in the upper part of the ion trap chamber, and a lower electrode (ion trap lower electrode) formed on the lower substrate is positioned in the lower part of the ion trap chamber. The ring electrode is formed by creating a conductive film (ring conductive film electrode) in the ring shape of the main substrate, and the ring conductive film electrode is connected to an outer electrode formed on the upper substrate and / or lower substrate through contact wiring formed on the upper substrate and / or lower substrate. The upper and lower electrodes of the ion trap are connected to the outer electrodes formed on the upper and lower substrates through contact wiring formed on the upper and lower substrates, and the ring electrode is a main substrate having a central hole. It is located between the ionization chamber or extraction electrode / accelerating electrode chamber, which is one through-chamber positioned above the ion trap chamber, and the ion trap chamber, and also between the ion detection chamber, which is the other through-chamber positioned next to the ion trap chamber, and the ion trap chamber. One central opening connects the ionization chamber to the ion trap chamber, and the other central opening connects the ion trap chamber to the ion detection chamber. This ion trap type mass spectrometer is characterized by the application of a predetermined voltage to a ring conductive film electrode, an upper ion trap electrode, and a lower ion trap electrode, thereby trapping ions that enter the ion trap chamber from the ionization chamber or extraction electrode / acceleration electrode chamber through a central hole connected to the ion trap chamber, and further ejecting the trapped ions from the ion trap chamber through a central hole connected to the ion detection chamber to the ion detection chamber for detection.

[0021] (twenty one) The present invention relates to an accelerator comprising a main substrate having a plurality of through-chambers penetrating from the top surface to the bottom surface, an upper substrate attached to the top surface of the main substrate, a lower substrate attached to the bottom surface of the main substrate, and a substrate side wall plate having a central hole that partitions the through-chambers, wherein charged particles pass through the through-chambers and the central hole of the substrate side wall plate. The accelerator includes a charged particle generation mechanism and a linear acceleration mechanism, and the charged particle generation mechanism and the linear acceleration mechanism are characterized by being formed in a through chamber. The electrodes and wiring formed within the through-chamber are conductive films laminated by one or more methods selected from CVD, PVD, plating, and electroforming, and are characterized by being connected to outer electrodes formed on the upper and / or lower substrates through contact wiring formed on the upper and / or lower substrates. The linear acceleration mechanism is constructed by arranging multiple electrodes (substrate sidewall electrodes) on a substrate sidewall plate having a central hole, each electrode having a conductive film formed on it. It is characterized by accelerating or decelerating (focusing) charged particles by applying a static voltage or high-frequency voltage to the substrate sidewall electrodes. The accelerator further includes a deceleration (focusing) mechanism, which is configured by arranging a plurality of electrodes (substrate sidewall electrodes) on a substrate sidewall plate having a central hole, each electrode having a conductive film formed on it, and is characterized by decelerating (focusing) the charged particles by applying a reverse voltage to the substrate sidewall electrodes.

[0022] (twenty two) The present invention further includes a deceleration (focusing) mechanism, and the deceleration (focusing) mechanism is characterized by being performed by a quadrupole magnet. A quadrupole magnet is characterized by having electromagnets positioned vertically (perpendicular to the substrate surface) from the outside of a substrate having a through-chamber fabricated within the substrate which serves as a passage for charged particles, and by having electromagnets positioned horizontally (perpendicular to the vertical direction) on both sides from the outside of the substrate having a through-chamber fabricated within the substrate which serves as a passage for charged particles. In the case where electromagnets are arranged laterally, the substrate region at the location where the electromagnets are to be placed is cut, and the electromagnets are placed in the resulting opening. The cutting method is characterized by laser dicing or high-pressure liquid jet dicing. The coils are characterized by being placed within the main substrates on both sides of the through-chamber. The coil is characterized by forming a conductive film (through-hole wiring) in through-holes that penetrate the upper and lower substrates and the main substrate, forming wiring on the upper and lower substrates to connect the through-hole wiring, and forming the coil wiring on the upper and lower substrates, with the electrodes at both ends of the coil formed on the upper substrate and / or the lower substrate. (twenty three) The present invention is characterized by forming through chambers (through chambers for coil arrangement) on both sides of a through chamber (through chamber for charged particle focusing), inserting coils into the through chambers for coil arrangement, and arranging the coils on both sides of the through chamber for charged particle focusing. The coil is characterized by being positioned by inserting the coil attached to the support substrate into a through-chamber for coil placement. The coil is characterized by being positioned at the top and bottom of the coil placement through chamber. The coil is characterized by being positioned in close contact with or near the upper and lower substrates. The coil is characterized by being positioned by attaching a substrate on which a coil is formed (coil-forming substrate) to an upper substrate and a lower substrate. [Effects of the Invention]

[0023] This invention uses LSI and MEMS processes to simultaneously form all the necessary functions for accelerators and mass spectrometers on a single substrate, resulting in extremely precise positional relationships between each functional component (e.g., accelerating electrodes). Furthermore, the inter-electrode distances and the paths for charged particles can be precisely formed on the order of millimeters or micrometers, resulting in an extremely small size. For example, a smaller inter-electrode distance increases the electric field strength, allowing for efficient control of the acceleration and deceleration of charged particles. Additionally, the frequency of the high-frequency signal supplied to the electrodes can be increased, enabling greater acceleration over shorter distances. Moreover, since all functional components can be manufactured in a single batch, manufacturing costs are dramatically reduced.

[0024] When the present invention is applied to a mass spectrometer, it has not been reported that a small sample supply unit, ionization chamber, extraction electrode / acceleration chamber, electric field chamber, magnetic field chamber, and ion detection chamber (referred to as functional units) have been fabricated using a substrate of 4 inches to 8 inches (diameter 100 mm to 200 mm, thickness 3 mm or less (2 mm Si substrate, 0.3 mm x 2 glass substrates), sizes larger than 8 inches are also possible) as described in the present invention. Furthermore, no patents or other similar ideas have been found. Moreover, it has not been reported that all of these have been realized together on the same substrate, thus possessing novelty, inventiveness, and superiority.

[0025] This mass spectrometer is ultra-compact {Main unit: Size of 6-inch wafer (50cm²) 3) The weight is 130g or less, and because it is manufactured in one piece, the manufacturing cost can be reduced to 100,000 yen or less (main unit: 6-inch wafer size). Conventional products with the same performance are 50cm x 50cm x 50cm or larger and weigh 20kg or more, so this product is 1 / 2500th in size (volume), 1 / 100th in weight, and 1 / 20th in price, offering a significant advantage. (Of course, larger sizes are also possible.) Since each functional part can be manufactured in one piece with high precision (1μm or less), it can be manufactured with far greater accuracy compared to other component assembly methods, so detection accuracy can be expected to be at least the same as or better than conventional products. Because this invention is ultra-compact and lightweight, it is portable and can be used for on-site observation. However, conventional products are almost impossible to carry, making on-site observation extremely difficult, so this is another significant advantage.

[0026] Furthermore, this mass spectrometer uses coils fabricated from substrates in the magnetic field chamber. Because the coils are aligned with the substrates, the placement accuracy is excellent, at less than 10 μm. Moreover, the coil size is small, ranging from 1 mm to 10 mm, so the overall size remains compact. This magnetic field chamber using substrate coils is highly novel and innovative. Its small size, low cost, and high accuracy give it a significant advantage over conventional products. The coils are also used in the electron ionization method, which, too, is highly novel and innovative. [Brief explanation of the drawing]

[0027] [Figure 1] Figure 1 shows an example of an embodiment of the ultra-compact accelerator of the present invention. [Figure 2] Figure 2 shows an example of the particle generator 11 of the present invention. [Figure 3] Figure 3 shows the structure of a linear accelerator for charged particles. [Figure 4] Figure 4 shows an example of a charged particle accelerator tube using a high-frequency waveguide. [Figure 5] Figure 5 shows an accelerator system formed by connecting multiple charged particle accelerators of the present invention. [Figure 6]Figure 6 shows an example of a method for manufacturing the charged particle accelerator of the present invention. [Figure 7] Figure 7 shows an example of a manufacturing method for the charged particle accelerator of the present invention, illustrating the process from substrate sidewall formation to conductive film patterning. [Figure 8] Figure 8 shows a method for fabricating a charged particle accelerator when a glass substrate 251 is sandwiched between an upper substrate (main substrate 201U, upper substrate 202) and a lower substrate (main substrate 201B, lower substrate 203) and attached by electrostatic coupling. [Figure 9] Figure 9 shows another embodiment of the extraction electrode structure. [Figure 10] Figure 10 shows an accelerating cavity chamber in which multiple substrate sidewall electrodes with a central hole are arranged. [Figure 11] Figure 11 shows one embodiment illustrating a method for manufacturing an electromagnet (coil). [Figure 12] Figure 12 shows a method for fabricating a high-performance coil by inserting a core with a high relative permeability μ. [Figure 13] Figure 13 shows a method for fabricating coils to be placed on the upper and lower substrates. [Figure 14] Figure 14 shows a quadrupole electromagnet structure fabricated using the coil (electromagnet) of the present invention. [Figure 15] Figure 15 shows the charged particle passage cavities and electromagnets, such as the deflection electromagnets 25, 30, 34, and 37, in Figure 1. [Figure 16] Figure 16 shows a miniature accelerator 10-1, which has the circular accelerator (synchrotron) 8-1 shown in Figure 1, connected to a larger circular accelerator 8-2, resulting in a double synchrotron (or two-cycle synchrotron). [Figure 17] Figure 17 shows a schematic diagram of the case where the circular accelerator 8 is divided and fabricated on a substrate. [Figure 18] Figure 18 shows the microwave ion source of the present invention. [Figure 19] Figure 19 shows one embodiment of the mass spectrometry of the present invention. [Figure 20] Figure 20 shows an example of a method for constructing a quadrupole mass spectrometry chamber. [Figure 21] Figure 21 illustrates an example of a structure and method for attaching quadrupole electrodes to a substrate. [Figure 22] Figure 22 illustrates another example of a structure and method for attaching quadrupole electrodes to a substrate. [Figure 23] Figure 23 shows the method for fabricating the quadrupole electrode of the present invention. [Figure 24] Figure 24 illustrates a method for attaching the quadrupole electrode rod 407 to the substrate. [Figure 25] Figure 25 illustrates a method for arranging quadrupole electrodes inside a mass spectrometer using a thin-film formation method. [Figure 26] Figure 26 shows the structure of an octupole electrode type. [Figure 27] Figure 27 is a schematic diagram showing a mass spectrometer of the fan-type magnetic field type, which has a through-chamber that serves as a mass spectrometry chamber where a fan-type magnetic field acts on the main substrate of the present invention. [Figure 28] Figure 28 shows a mass spectrometer in a mass spectrometry room that detects ions that have been subjected to a magnetic field force using an ion detector arranged in multiple directions. [Figure 29] Figure 29 shows the dual-focusing mass spectrometer of the present invention. [Figure 30] Figure 30 shows one design guideline for a single-focusing fan-type magnetic field analyzer and a double-focusing fan-type magnetic field analyzer. [Figure 31] Figure 31 shows the FTICR of the present invention. [Figure 32] Figure 32 shows the structure when the size of the ICR room is increased. [Figure 33] Figure 33 shows an FTICR with the coil of the present invention arranged. [Figure 34] Figure 34 shows an FTICR with a different coil configuration than that shown in Figure 33. [Figure 35] Figure 35 shows a different ionization method than the one described in Figure 19. [Figure 36] Figure 36 shows another embodiment of the ionization method. [Figure 37] Figure 37 is a diagram illustrating the atmospheric pressure chemical ionization method. [Figure 38] Figure 38 shows a method for fabricating an ionization chamber with a pointed electrode. [Figure 39] Figure 39 shows an embodiment in which continuous flow (CF)-FAB ionization, a type of fast atomic bombardment (FAB), is applied to the present invention. [Figure 40] Figure 40 shows the method for fabricating an ion trap type mass spectrometer. [Figure 41] Figure 41 shows an ion trap mass spectrometer in which charged particles pass through the end cap electrode 609. [Figure 42] Figure 42 shows an ion detection chamber in which a large number of dynodes using the present invention are arranged. [Figure 43] Figure 43 shows one embodiment of the method for fabricating the parallel plate type electrode shown in Figure 42. [Figure 44] Figure 44 shows an example in which the central hole of the present invention is applied to a channel-type secondary electron multiplier tube. [Figure 45] Figure 45 is a schematic diagram (cross-sectional view perpendicular to the substrate surface) of the mass spectrometer of the present invention. [Figure 46] Figure 46 shows the dual-focusing mass spectrometry unit (electric field unit + magnetic field unit) (plan view) and (b) the simultaneous detection method for multiple ions (plan view). [Figure 47] Figure 47 shows the electron ionization section (cross-sectional view). [Figure 48] Figure 48 is an image of the final product (main unit only) of the present invention. [Figure 49] Figure 49 shows an ion trap type mass spectrometer formed in the vertical direction. [Figure 50] Figure 50 shows a method or apparatus for forming a pattern on the side wall of a substrate through-hole or substrate recess. [Figure 51]Figure 51 shows a through-hole side wall etching apparatus. [Figure 52] Figure 52 shows a method for fabricating the through-chamber of an accelerator or mass spectrometer according to the present invention using a mold. [Figure 53] Figure 53 shows an exposure apparatus with light-emitting elements positioned on the front and rear surfaces. [Figure 54] Figure 54 shows a method for forming a central hole using the mold ingot method. [Figure 55] Figure 55 shows a method for forming a central hole in a substrate that has been cut at approximately half the height of the central hole in the area where the central hole is to be formed. [Figure 56] Figure 56 illustrates a method for polishing a through-wall to create a smooth and even surface ((a)) and a method for transferring a pattern to the through-wall ((b), (c)). [Figure 57] Figure 57 is a plan view of the synchrotron-type substrate ion implantation apparatus of the present invention, viewed parallel to the substrate surface. [Figure 58] Figure 58 is a diagram (plan view) showing a synchrotron-type ion implanter with two annular orbitals. [Figure 59] Figure 59 is an enlarged view (plan view parallel to the substrate) of the connection area between the ion emission line 2143 and the second-stage annular track 2145. [Figure 60] Figure 60 shows a cross-section of the orbital connection section of a two-tiered ion implantation apparatus. [Figure 61] Figure 61 shows an example of an RFQ (Radio Frequency Quadrouple) type linear accelerator. [Figure 62] Figure 62 shows the method for fabricating the RFQ-type linear accelerator shown in Figure 61. [Figure 63] Figure 63 shows another acceleration method (IH type) for linear accelerators. [Figure 64] Figure 64 shows an acceleration method in another linear acceleration chamber. [Modes for carrying out the invention]

[0028] The present invention relates to an accelerator in which charged particles such as electrons and ions move at high speed within a cavity formed in the thickness direction of a substrate or thin plate (main substrate or first substrate) through grooves (also referred to as recesses) or through holes (hereinafter also referred to as cavities). Above the cavity, a substrate or thin plate (second substrate) is attached to the substrate sidewalls on both sides of the cavity, and below the cavity, a substrate or thin plate (third substrate) (in the case of through grooves, the bottom surface of the main substrate) is attached to the substrate sidewalls on both sides of the cavity. Therefore, the cavity is an airtight space sandwiched above and below by the second and third substrates and on its sides by the sidewall of the first substrate. In a portion of the airtight cavity, part or all of the substrate sidewalls above and / or below and / or on both sides of the cavity are hollowed out (or holes are formed), and gas (air, oxygen, nitrogen, etc.) inside the cavity is exhausted through the hollowed-out portion or hole (hereinafter also referred to as a vacuum transfer hole), and the inside of the cavity is in a predetermined low-pressure state (for example, a low-pressure state close to a vacuum).

[0029] In a portion of the cavity (or outside the cavity), coils, electromagnets, or permanent magnets are placed above and / or below the cavity, and the magnetic field created by the coils, etc., forces electrons and ions (hereinafter referred to as charged particles) passing through the cavity, causing them to accelerate and / or be deflected. And / or, in a portion of the cavity (or outside the cavity), coils are placed on one side and / or the other side of the cavity, and the magnetic field created by the coils forces charged particles passing through the cavity, causing them to accelerate and / or be deflected. Or / and, in a portion of the cavity (or outside the cavity), electrodes are placed above and / or below the cavity, and the electric field created by the electrodes forces charged particles passing through the cavity, causing them to accelerate and / or be deflected. And / or, in a portion of the cavity (or outside the cavity), electrodes are placed on one side and / or the other side of the cavity, and the electric field created by the electrodes forces charged particles passing through the cavity, causing them to accelerate and / or be deflected.

[0030] A charged particle generation section (chamber) can be created within the first substrate, and the charged particles generated in this section can be guided through a cavity created within the first substrate (sometimes called a (charged particle) introduction cavity) to a cavity that can accelerate the charged particles (sometimes called a (charged particle) acceleration cavity). Alternatively, an external charged particle generator can be connected to the entrance (sometimes called the (charged particle) (external) introduction cavity entrance) of a cavity created within the first substrate (sometimes called a (charged particle) (external) introduction cavity), and the charged particles can be guided through the external introduction cavity to a cavity or acceleration cavity within the main substrate. Charged particles moving within the acceleration cavity exit to the outside through a charged particle discharge outlet (sometimes called a (charged particle) discharge outlet) that connects the first substrate to the outside. The charged particle discharge outlet and the acceleration cavity are connected by a cavity created within the first substrate (sometimes called a (charged particle) discharge cavity). The accelerated charged particles exit through a charged particle outlet and can be applied to various purposes such as medical applications, analytical applications, and product modification applications. Alternatively, there can be no charged particle outlet, and the particles are ion-analyzed in an analytical chamber formed within the main substrate.

[0031] The accelerator of the present invention (sometimes called a substrate accelerator) can be manufactured using photolithography, laser patterning, mold formation using a mold, or punching, so that cavity widths and depths of 0.1 mm to 0.5 mm, 0.5 mm to 1.00 mm, 1.0 mm to 10 mm, 1 cm to 2 cm, 2 cm to 10 cm, or 10 cm or more can be manufactured with extreme precision. Furthermore, accelerators of linear, polygonal, circular, elliptical, hyperbolic, or other curved shapes can be manufactured to desired dimensions. For example, in the case of a linear shape, a number of linear cavities can be formed in a single substrate, and these linear cavities can be cut out in the direction of the cavity length (for example, by dicing), and the cut-out pieces can be connected to each other to manufacture a linear accelerator of any length.

[0032] For example, if the first substrate is a Si substrate, the accelerating cavity width is 5 mm, the accelerating cavity depth is 5 mm, multiple coils (10 mm in length) are formed within the first substrate on both sides of the accelerating cavity, and 0.5 mm thick glass substrates (second and third substrates) are attached to the first substrate above and below the accelerating cavity, with multiple coils (20 mm in length) positioned above and below these, then when the size of the first substrate is 500 mm x 500 mm (or when a circular wafer of this size can be manufactured (diameter of 500√2 = 707 mm or more)), one linear accelerator will be approximately 500 mm in length, 15 mm in width, and 6 mm in height, and approximately 33 units (each of these is called a unit accelerator) can be obtained from one substrate (the first substrate with the second and third substrates attached, and coils positioned above, below, and / or to the left and right). If you connect 10 of these unit accelerators together, you get a 5m linear accelerator, so a 16.5m linear accelerator can be made from one substrate. Therefore, to make a 1km accelerator, you would need 61 substrates.

[0033] In the case of circular accelerators, or even in the case of ultra-compact accelerators that can be manufactured using only one substrate, numerous circular orbits (circular cavities) of different sizes are created, and cavities connecting them (sometimes called connecting cavities) are created. The velocity is increased in stages, and the orbits are moved accordingly, accelerating to the final velocity in the last orbit (usually the outermost one) and releasing the charged particles to the outside. In this invention, all patterns such as cavities, coils, and electrodes can be formed simultaneously, so the number of process steps (number of manufacturing processes) does not change regardless of the number of circular orbits, and the cost hardly changes. For example, if a circular accelerator is made by first creating a circular orbit with a radius of 10 mm, with a cavity width of 5 mm, then the next circular orbit with a size of 25 mm, then the next circular orbit with a radius of 40 mm, and so on, increasing the radius by 15 mm each time (cavity width is 5 mm in all cases, and the distance between cavities is 10 mm), then 16 circular orbits can be created on a 500 mm circular wafer. These are connected sequentially, and acceleration is carried out in each circular orbit. The first small circular orbit is at a speed of 10 m / sec, the next circular orbit is at four times that speed, and the nth orbit is at 10 × 4 n-1When scaled to m / sec, the final 16th circular orbit reaches 100,000 km / sec, which is one-third the speed of light. Ultrafast charged particles can be fabricated on a single wafer.

[0034] When circular accelerators are made larger, they can be constructed by connecting substrates, similar to linear accelerators. For example, if a single substrate measures 500mm x 500mm and the diameter of the circular accelerator is 1000mm (1m), then four substrates can be used to create a quarter-circle section, and these four quarter-circle substrates can be connected. When constructing an even larger circular accelerator, for example, a 10000mm (10m) circular accelerator would require connecting approximately 100 substrates of 1000mm x 1000mm.

[0035] The present invention relates to an accelerator fabricated on a substrate, which includes a cavity through which charged particles pass, such as an accelerating cavity; electrodes that generate an electric field to accelerate, decelerate, or deflect charged particles; and coils and electromagnets that generate a magnetic field to accelerate, decelerate, or deflect charged particles. Figure 1 shows an example of an embodiment of the ultra-compact accelerator of the present invention, which is mounted on a single substrate 9 and includes a charged particle generator 11, a linear (type) accelerator 13, various electromagnets 15, 17, 19, 21, 22, 23, 26, 28, 29, 31, 32, 35, 36, deflection electromagnets 25, 30, 34, 37, cavities through which charged particles pass 12, 14, 16, 18, 20, 24, 27, 33, 38, 40, and a linear accelerator 39. These are just examples, and it is possible to omit or add components, or add components with other functions.

[0036] Charged particles generated in the charged particle generator 11 pass through the cavity 12, are accelerated by the linear accelerator 13, pass through the cavity 14, have their trajectories deflected by the deflection electromagnet 15, pass through the cavity 16, have their trajectories deflected and / or converged by the deflection electromagnet 17, pass through the cavity 18, have their trajectories deflected by the deflection electromagnet 19, pass through the next cavity 20, and enter the storage ring 24, which is a cavity through which charged particles pass in the circular accelerator 8, via the inflator 21. A linear accelerator 42 can also be provided in the middle of the cavity 20 to adjust the velocity of the charged particles entering the inflator 21. In addition, other deflection electromagnets, accelerating electrodes, decelerating electrodes, linear accelerators, etc. may be provided in the path from the charged particle generator 11 to the inflator 21. In addition, other deflection electromagnets, accelerating electrodes, decelerating electrodes, linear accelerators, convergent electromagnets, etc. may be provided in the path.

[0037] Charged particles injected from the inflator 21 into the storage ring 24 of the circular accelerator 8 are focused by the (horizontal) focusing electromagnet 22 and the (vertical) focusing electromagnet 22, deflected and accelerated by the deflection electromagnet 25, and enter the next storage ring 27, where they are further accelerated by the high-frequency accelerating cavity 29, focused by the (vertical) focusing electromagnet 26 and the (horizontal) focusing electromagnet 28, deflected and accelerated by the deflection electromagnet 30, and enter the next storage ring 33, where they are focused again by the (vertical) focusing electromagnet 31 and the (horizontal) focusing electromagnet 32, deflected and accelerated by the deflection electromagnet 34, and enter the next storage ring 38, where they are focused again by the (vertical) focusing electromagnet 35 and the (horizontal) focusing electromagnet 36, deflected and accelerated by the next deflection electromagnet 37, and enter the next storage ring 24. In this way, the charged particles continue to rotate while accelerating through the storage rings 24, 27, 33, and 38. Once the desired speed and number of charged particles are obtained, they enter a cavity 40 that guides the charged particles to the outside (sometimes called a charged particle discharge cavity), and are removed to the outside through the outlet 41 of the charged particle discharge cavity 40. A linear accelerator 39 may be provided in the middle of the charged particle discharge cavity 40 to further accelerate the charged particles. Alternatively, other deflection electromagnets, accelerating electrodes, deceleration electrodes, linear accelerators, focusing electromagnets, etc., may be provided along the way.

[0038] As described above, the storage rings 24, 27, 33, and 38 form a single connected annular passage. In addition, holes are formed in various places in the various cavities, and these holes are connected to a vacuum line, which in turn is connected to an external vacuum pump, reducing the pressure in the various cavities to a near-vacuum state. Furthermore, holes are formed in various places in the various cavities, and gases such as inert gases such as nitrogen, He, and Ar can be introduced through these holes, allowing for cleaning or gas purging of the inside of the cavities as needed.

[0039] As shown in Figure 1, the present invention also places an electron or ion particle generator 11 within the main substrate (first substrate) 9. An example of this particle generator 11 is shown in Figure 2. The particle (ion) generator shown in Figure 2 is an ion generator having parallel plate electrodes. Figure 2(a) is a cross-sectional structure perpendicular to the substrate plane (in the substrate thickness direction), and Figure 2(b) is a plan view. Within the main substrate 51, a cavity 76 which is a plasma generation chamber and a cavity 77 which extracts charged particles such as electrons, protons, and various ions generated in the plasma generation chamber 76 and guides them to an accelerator (13 in Figure 1) are formed, and a second substrate (upper substrate) 53 is attached to the upper surface of the main substrate 51, and a third substrate (lower substrate) 52 is attached to the lower surface of the main substrate 51.

[0040] In the plasma generation chamber 76, a (lower) electrode 54 is formed on the lower substrate 52, and its periphery is covered by a laminated insulating film 55 such as a silicon oxide film (or silicon nitride film, silicon oxynitride film). An (upper) electrode 58 is formed on the upper substrate 53, and its periphery is covered (protected) by a laminated insulating film 59 such as a silicon oxide film (or silicon nitride film, silicon oxynitride film). These electrodes 54 and 58 are patterned and arranged to face each other, and the second substrate 53 and third substrate 52 are attached to both the upper and lower surfaces of the main substrate 51. Contact holes are made in the lower substrate 52, and contact electrodes (conductive films) 56 are formed in these contact holes, and furthermore, an extraction electrode 57 is formed on one side of the lower substrate 52. Contact holes are also made in the upper substrate 53, and contact electrodes 60 are formed in these contact holes, and furthermore, an extraction electrode 61 is formed on one side of the upper substrate 53. These electrodes 57 and 61 are positioned on the outside when the upper and lower substrates 52 and 53 are attached to the main substrate 51, and a matching circuit 78 and an AC or high-frequency electrode 79 are connected between these electrodes, with one electrode being grounded.

[0041] The upper substrate 53 has a gas inlet 71, gas exhaust vents 72 and 73 for exhausting gas from the plasma generation chamber 76 to reduce pressure, and a gas exhaust vent 74 for exhausting gas from the cavity 77 on the accelerator side to reduce pressure. A sealing portion 62 is formed on the upper surface of the upper substrate 53 at these gas inlet vents 71 and gas exhaust vents 72, 73, and 74. The gas inlet line 63 and gas exhaust lines 64, 65, and 66 are connected to this sealing portion 62, creating an airtight seal to prevent external gases (such as air) from entering the plasma generation chamber 76 or cavity 77. The gas exhaust lines 64 and 65 are connected to vacuum pumps 68 and 69, and the plasma generation chamber 76 is lowered to a predetermined pressure (for example, 0.1 atm to 0.001 atm). In this state, when a high-frequency voltage is applied to the upper and lower electrodes 54 and 58 through the extraction electrodes 57 and 61, the gas undergoes plasma ionization, generating electrons and ions, and thus generating charged particles. For example, introducing argon gas (Ar) generates Ar+ and electrons. Introducing methane (CH4) gas generates various ions (C-, CH+, CH2+, CH3+, CH4+, etc.). Introducing arsenic gas (As) generates As+ and electrons.

[0042] The distance d1 between electrodes 54 and 58 is approximately the same as the thickness of the main substrate 51 (more precisely, the thickness of the main substrate minus the thickness of the upper and lower electrodes). Therefore, if the thickness of the main substrate is 1 mm, a high electric field of 1 KV / cm can be applied by applying 100 V, making plasma generation possible at a low voltage. To apply an even higher electric field, in addition to applying a high voltage, the thickness of the main substrate can be reduced, or if the thickness of the main substrate (overall) cannot be reduced, the distance d1 only in the part where the electrodes are to be installed can be reduced by etching the main substrate to a predetermined thickness and forming electrodes at the bottom, or by creating a protrusion on the upper or lower substrate and forming electrodes on that protrusion. This protrusion can also be made by attaching another substrate to the upper or lower substrate, and the upper or lower substrate with the protrusion attached can be attached to the top and bottom of the main substrate.

[0043] A gas exhaust line 66 is also connected to the accelerator side cavity 77, which is connected to the vacuum pump 70, but the pressure in the accelerator side cavity 77 is considerably lower than that in the plasma generation chamber 76 (for example, 10 -3 atm~10 -12 The pressure is atm. Therefore, a portion of the plasma generated in the plasma generation chamber 76 is introduced into the accelerator side cavity 77. Also, since the accelerator cavity 77 is connected to the accelerator side cavity, charged particles are attracted to the accelerator side cavity 77. Although the plasma generation chamber 76 is described as being larger than the accelerator side cavity 77, as long as there is an area where plasma can be generated, the accelerator side cavity 77 may be larger. In that case, since the accelerator side cavity 77 is at a lower pressure, an on / off valve may be provided between the plasma generation chamber 76 and the accelerator side cavity 77, or a portion of the space between the plasma generation chamber 76 and the accelerator side cavity 77 may be narrowed. The plasma flow flows in the direction of 80 and enters the accelerator side.

[0044] An extraction electrode 83 is positioned between the plasma generation chamber 76 and the accelerator side cavity 77, and ions generated in the plasma generation chamber 76 may be extracted. The extraction electrode 83 has a structure in which the substrate side wall 81 of the main substrate 51, which has a central hole 84, is covered with a conductive film 82. As can be seen from the cross-sectional view (elevation view) 2(a) and the plan view 2(b), the substrate side wall 81 of the main substrate 51 is formed to protrude around the inner surface of the accelerator cavity 77, with a central hole 84 formed in the center. In addition, a conductive film wiring 85-1 is formed on the lower surface of the upper substrate 53 (the upper surface of the inner surface of the accelerator side cavity 77), and this conductive film wiring 85-1 is connected to the conductive film 82. The contact hole formed in the upper substrate 53 and the conductive film 86 formed therein are connected to the conductive film wiring 85-1, and the conductive film 86 inside the contact hole is connected to the outer electrode / wiring 87 formed on the upper surface of the upper substrate 53. As a result, a voltage can be applied to the extraction electrode 83 to draw out ions and electrons from the outer electrode and wiring 87.

[0045] In Figure 2, a voltage opposite to the charge of the ions to be guided to the accelerator is applied to the extraction electrode 83. However, in the case of Figure 2, the extraction electrode 82 is directly facing the ions, so in addition to the ions that enter the central hole 84 and are accelerated, many ions also collide with the side surface of the extraction electrode 82, which may reduce the efficiency of ion extraction. Therefore, the size of the hole in the central hole 84 may be adjusted to make it easier for ions to pass through. For example, if the hole size is the same as the accelerator side cavity 77, that is, if the substrate side wall 81 is not provided and only the peripheral electrodes 85 of the accelerator side cavity 77 (annular (rectangular strip) electrode formed by the continuous connection of electrode wiring 85-1 on the lower surface of the upper substrate, side electrode 85-2 on the main substrate 51, electrode wiring 85-3 on the lower surface of the lower substrate, and side electrode 85-4 on the main substrate 51) is provided, the central hole 84 may be provided in the substrate side wall 82, the size of the central hole may be changed to an optimal value, and a conductive film 82 may be formed on top of it. Alternatively, a substrate side wall with a central hole without a conductive film is provided in front of the extraction electrode 83, on the ion generation chamber 76 side, thereby blocking the vertical wall electrode in front of the extraction electrode 83 and directing the ions toward the central hole.

[0046] Another method is shown in Figure 9. Figure 9 shows another embodiment of the extraction electrode structure. Figure 9(a) is a vertical cross-sectional view, and Figure 9(b) is a plan cross-sectional view. In Figure 9, a focusing electrode 89 is located in front of the extraction electrode 83, between the ion generating electrodes 54 and 58. In Figure 2, the substrate side wall 81 of the extraction electrode 83 is almost perpendicular to the sides of the upper and lower substrates 53 and 52 and the main substrate 51, but in this embodiment, the substrate side wall is inclined and gradually narrows toward the accelerator side cavity 77-2 (the cavity on the right side (accelerator cavity side) with the substrate side wall 81 in between) and connects to the central hole 84. It can also be said that the size of the central hole 84 gradually decreases toward the accelerator side cavity 77-2. Furthermore, if this part is considered the entrance 88 of the accelerator side cavity 77-2, it can also be said that the entrance 88 gradually decreases toward the accelerator side cavity 77-2. Conversely, it can also be said that the size of the central hole 84 tapers and increases toward the accelerator side cavity 77-1 (the cavity on the left side (ion generation electrode side) across the substrate side wall 81). It can also be said that the substrate side wall 51-2 gradually thickens toward the accelerator side cavity 77-2. Furthermore, as shown in Figure 9(b), when the outlet of the plasma (ion) generation chamber 76 is larger than the entrance of the accelerator side cavity 77, the outlet portion 48 is formed in a shape that gradually narrows when viewed in plan. (In the case shown in Figure 2, as shown in Figure 2(b), the size of the outlet of the plasma (ion) generation chamber 76 and the size of the inlet of the accelerator side cavity 77 change abruptly.) A conductive film electrode 89 is formed on the inclined main substrate side surface of the inlet portion 88 of the accelerator side cavity 77, and this conductive film electrode 89 is connected to a conductive film wiring 45 formed on the upper substrate 53 or the lower substrate, and the conductive film wiring 45 is connected to the outer electrode 47 through a contact hole formed on the upper substrate 53 or the lower substrate and the conductive film wiring 46 inside it.

[0047] This conductive film electrode 89 is also formed extending to the (inclined in plan view) side surface of the main substrate at the outlet of the plasma (ion) generation chamber 76. In addition, conductive film electrodes 82 are formed on a part of the central hole and on the side surface of the substrate side wall 81 of the accelerator side cavity 77-2, and are connected to the outer electrode 87. Since the conductive film 89 and conductive film 82 are not connected, different voltages can be applied from the outer electrodes 47 and 87. That is, a voltage with the same charge as the ions is applied to the conductive film 89 so that the ions converge to the center of the cavity. Also, a voltage with the opposite charge to the ions is applied to the extraction electrode 82, so that the ions are attracted to the extraction electrode 82 and accelerated, passing through the central hole 84 of cavity 77-1 into the adjacent accelerating cavity 77-2. If the acceleration is weak, an accelerating electrode (electrostatic lens) with a conductive film laminated on the substrate side wall having a central hole is provided in the accelerating cavity 77-2 to further accelerate the ions. If the ions are accelerating too much, a reverse potential can be applied to create a deceleration electrode. This invention allows for the provision of numerous accelerating and deceleration electrodes even over short distances, and enables the easy fabrication of outer electrodes for each, allowing ions to pass through the accelerating cavity side cavities 77-1 and 77-2 at a desired speed. As shown in Figure 9, the structure allows ions to be attracted to the accelerating device side cavity 77 by the extraction electrode, to converge (i.e., gather towards the center) due to the same potential applied to the outlet and inlet, and because the outlet and inlet gradually narrow, fewer ions are repelled and pushed back even if the outlet and inlet are at the same potential as the ions. As a result, most of the ions generated in the ion generation chamber 76 (at the opposite potential to the extraction electrode) enter the accelerating device side cavity 77-2 and, being accelerated, proceed further towards the accelerating device. The tapered conductive film 89 can also be divided into several sections relative to the direction of ion propagation, and different voltages can be applied to each electrode. For example, by gradually weakening the voltage relative to the direction of ion propagation, the electric field applied to the ions can be kept constant or gradually weakened. (When viewed in the direction of ion propagation, the distance between the ion and the electrode decreases, so the electric field becomes stronger when the same voltage is applied.) As a result, ions can be stably sent in the direction of propagation (towards the accelerating cavity 77-2).Alternatively, by selectively applying a focusing voltage and an accelerating voltage to the divided conductive film 89 electrodes, ions can be focused and accelerated. By dividing the conductive film 89 electrodes in this way and applying voltages to each one individually, it becomes possible to efficiently send ions towards the accelerating cavity 77-2.

[0048] Alternatively, a large number of ions can be guided to the accelerator cavity 77-2 by applying a potential opposite to the ion potential to the inclined electrode 89, and then drawing out an even higher potential opposite to that potential and applying it to the electrode. In other words, as the ion 49 moves, the electric field becomes larger, causing the ion 49 to gather in the center and move forward.

[0049] Next, we will explain the processes of the plasma (ion) generator, accelerating cavity side cavity, extraction electrode, and accelerating (deceleration) electrode shown in Figures 2 and 9. First, we will explain the plasma (ion) generator, etc., which has a cavity without a central hole. As the main substrate (first substrate) 51, conductive substrates (including metals such as Cu, Al, Ti, Zn and their alloys, conductive C (including carbon nanotubes, graphene, etc.), conductive plastics, conductive ceramics, etc.), semiconductors such as Si, SiC, C, compound semiconductors, plastics, glass, quartz, alumina (Al2O3), AlN, polymer resins, ceramics, etc., and composites thereof can be used. For the upper substrate (second substrate) and lower substrate (third substrate), the optimal substrates are plastics, glass, quartz, alumina (Al2O3), AlN, polymer resins, ceramics, etc., since contact holes are made inside, but the same material as the main substrate 51 can also be used.

[0050] A photosensitive film is attached to the main substrate 51 by coating or bonding, and the photosensitive film is patterned by exposure. An insulating film, an etching stopper material, or a film to improve adhesion to the photosensitive film may be attached between the main substrate 51 and the photosensitive film before the photosensitive film is attached. The main substrate 51 is etched away using the patterned photosensitive film as a mask to form a through-chamber that penetrates from the top surface to the bottom surface of the main substrate 51. To create the through-chamber to the correct dimensions, it is desirable that the side with small side etching is nearly vertical, but it does not have to be a vertical shape if the side etching can be controlled. If the main substrate is a Si substrate, the surface may be oxidized or nitrided, or an insulating film such as an SiO2 film or SiN film may be laminated before attaching the photosensitive film sheet, or a resist may be applied, followed by appropriate heat treatment (such as pre-baking), and then a window may be created in the desired area by exposure. Through this window, an insulating film is vertically etched (anisotropic etching), and then these are used as a mask to vertically etch the window opening (various methods are available, such as anisotropic etching, DRIE, and Bosch process) to create a through-chamber. If a conductive film pattern is to be formed inside the through-chamber, this can also be done here. If the main substrate is a semiconductor substrate or a conductive substrate, an insulating film is formed on the surface of the main substrate and the sides of the through-chamber before forming the conductive film. A photosensitive film is formed on the surface and sides of the main substrate 51 by methods such as photosensitive film sheet attachment, resist coating, or photosensitive film electrodeposition. Next, the surface and sides of the main substrate 51 are patterned with a photosensitive film by exposure (oblique exposure method, using an exposure device with a deep depth of field). Next, the conductive film is etched using the pattern of this photosensitive film as a mask by wet etching or isotropic dry etching to form the desired conductive film pattern. After this, if necessary, a protective insulating film is formed on the conductive film pattern. For the areas that will connect to the conductive films on the upper and lower substrates, a window in the conductive film at the connection point is created using the same photolithography + etching method. Next, to improve the connection with the conductive films on the upper and lower substrates, it is also possible to create a convex shape (slightly raise) in the conductive film at the windowed area. As a method for this, one can perform another layer of conductive film and use the same photolithography + etching method to leave the conductive film only at the connection point, or one can layer metal or other material at the connection point using selective CVD or plating.

[0051] Conductive film patterns, which will serve as electrodes, are pre-formed on the upper and lower substrates. If the upper and lower substrates are insulating substrates such as glass, quartz, or plastic substrates, the conductive film can be directly laminated, but an insulating film may be laminated first to improve adhesion before the conductive film is laminated. The conductive film can be made of Cu, Al, Ti, W, Mo, Au, Cr, Ni, conductive C, conductive PolySi, conductive plastics, alloys of these, composite films, or laminated films. CVD, PVD, plating, coating, screen printing, or combinations thereof can be used. After laminating the conductive film, a photosensitive film pattern is created using a photosensitive film by exposure or other methods, and this is used as a mask to form the conductive film electrodes and necessary wiring. Dry etching or wet etching can be used for etching the conductive film. After forming the conductive film pattern, a protective film may be formed by covering it with an insulating film or the like. If the substrate is covered with an insulating film, the connection points with the conductive film patterns formed on the upper and lower substrates are opened in the conductive film at the connection points using the same photolithography + etching method. Next, to improve the connection with the conductive films on the upper and lower substrates, the opened areas may be made convex (slightly raised) with the conductive film. As a method for this, the conductive film may be laminated again and the same photolithography + etching method is used to leave the conductive film only at the connection points, or a metal or other material may be laminated at the connection points using selective CVD or plating. After that, contact holes, the conductive film within them, the conductive film on the contact holes and other parts, and the formation of electrodes may be carried out. In addition, gas introduction holes or openings for vacuuming may be provided in the upper and lower substrates. These openings can be made by dry etching or wet etching.

[0052] Next, the upper and lower substrates are attached to the main substrate, which has through-holes and conductive film wiring patterns formed on it, while aligning the patterns. When connecting the conductive film of the main substrate to the conductive films of the upper and lower substrates, it is easier to connect them if the conductive film patterns of each substrate are formed so that their connection areas overlap. Conductive adhesive (including low-melting-point solder alloys) is applied to the connection parts between the conductive films to bond them. After bonding, a predetermined heat treatment is performed to ensure a secure connection. Even without using adhesive, a secure connection can be achieved by heat treatment around the melting point of the conductive film or by fusion bonding. By applying pressure, conductive films can be connected even with heat treatment below the melting point. Other parts can also be bonded using adhesive bonding methods, room-temperature bonding methods, diffusion bonding methods, or high-temperature bonding methods. If the main substrate 51 is a semiconductor substrate such as Si or a conductive substrate, and the upper and lower substrates are glass substrates, quartz substrates, alumina substrates, etc., they can be bonded using the anodic bonding method. It is also possible to connect to the conductive film of the main substrate through contact holes provided in the upper and lower substrates. Whether or not adhesive is used, after joining, a conductive film can be laminated at the connection point using selective CVD, plating, or electroforming methods, utilizing the openings provided in the upper and lower substrates. Furthermore, a conductive film can be laminated even to areas of the conductive film not covered by a protective film, ensuring a reliable connection. For example, by connecting a quartz tube, glass tube, heat-resistant plastic tube, or metal tube such as SUS to the opening (a heat-resistant plastic packing may be interposed at the contact point), introducing a reactive gas (e.g., WF6 gas) into the through-chamber of the main substrate, and then flowing the reactive gas through the through-chamber of the main substrate while drawing it through another opening with a pump, and performing heat treatment at a predetermined temperature, a conductive film (e.g., W film) can be selectively laminated on areas where the conductive film is exposed, such as at the connection points between conductive films. Alternatively, by flowing a plating solution (copper or various solder plating solutions) through these tubes and applying current from the outer electrode, a plating film can be laminated on areas where the conductive film (copper or various solder plating films) is exposed. After that, performing a predetermined heat treatment will make the connection at the connection point even more reliable.

[0053] In the above description, a support substrate is not used in forming the through-hole of the main substrate 51, but the through-hole can be formed using a support substrate. When substrate deformation occurs due to stress or the like after the through-hole of the main substrate 51 is formed, it is advisable to use a support substrate. After attaching the support substrate to the main substrate, the adhesion surface with the support substrate and the main substrate surface on the side of the through-hole body are patterned with a photosensitive film or the like, and the through-hole is fabricated in the main substrate by etching the main substrate. Etching may be performed until the support substrate is reached. When the support substrate is to be removed later, it is advisable to use a softening adhesive or a low melting point metal (alloy) (referred to as adhesive A) for the adhesion between the support substrate and the main substrate. After the main substrate and the support substrate are adhered, the through-hole is formed in the main substrate by the method described above. At this time, although the support substrate is also etched, if an etching method with a high selectivity ratio is used, less etching of the support substrate is required. Thereafter, the insulating film, the conductor film, the protective film, and their patterning are the same, but since the support substrate is removed, it is desirable to etch and remove the film at the connection portion. Next, the upper substrate or the lower substrate is attached to the main substrate with the patterns aligned. When using an adhesive or the like (referred to as adhesive B), it is necessary to select an adhesive or the like that does not peel off or shift at the temperature when the support substrate is removed. For example, a thermosetting adhesive with a curing temperature T B lower than the softening temperature (melting point) T A of the adhesive (metal) A may be used. After the upper substrate or the lower substrate is adhered to the main substrate, the support substrate can be separated from the main substrate by heat treatment at a temperature of T A or higher. Alternatively, if adhesive A is a photo-detachable adhesive and adhesive B is a thermosetting adhesive, the support substrate can be peeled off by light irradiation after the upper substrate or the lower substrate is adhered with adhesive B. Thereafter, the other substrate (upper substrate or lower substrate) is attached.

[0054] It is also possible to attach the upper or lower substrate from the beginning instead of the support substrate. The upper substrate and the main substrate are attached, and the patterning and through-chambers are formed on the main substrate from the opposite side. At this time, it is desirable to set etching conditions with a high selectivity ratio so that the upper substrate is not etched too much. If a conductive film or other pattern is required on the upper or lower substrate, these patterns are formed before attaching them to the main substrate. In particular, when the pattern formation surface faces the main substrate, the conductive film or other pattern is formed on the upper or lower substrate in advance. The pattern surface of this upper or lower substrate is aligned with the pattern surface of the main substrate and attached. The pattern surface of the main substrate may be aligned with the through-chamber pattern if one has been formed in advance, or with the conductive film pattern if one has been formed on the main substrate. If the through-chamber is formed after attachment, very precise pattern alignment is not required during attachment. After forming the through-chamber, an insulating film, a conductive film, and a protective film are laminated, and these are patterned. At this time, since electrodes and wiring need to be formed on the upper substrate and / or on the side wall of the through-chamber, a photosensitive film pattern is fabricated using a photosensitive sheet method, electrodeposition resist method, exposure method with a high depth of focus, rotational exposure method, oblique exposure method, etc., and a conductive film pattern is formed by wet etching or dry etching. After that, the upper or lower substrate on which the electrode and wiring pattern has been formed is attached to the main substrate.

[0055] As described above, an upper substrate with pre-fabricated electrode and wiring patterns is prepared, and recesses are pre-formed in the main substrate to accommodate the patterns on the upper substrate. The recesses in the main substrate and the patterns on the upper substrate are aligned, and the upper and main substrates are attached. After that, a through-chamber is formed in the main substrate. At this time, since there are already electrode and wiring patterns formed on the upper substrate, the through-chamber is formed under conditions that prevent (or minimize) etching of these electrode and wiring patterns. For example, if the main substrate is Si, Si can be etched quickly with CF-based gas, but if Al or copper electrodes and wiring are formed on the upper substrate, conditions can be selected that prevent them from being etched much at all with CF-based gas. After this, an insulating film is formed and a conductive film is formed, and then the conductive film patterning can be performed only on the sides of the main substrate. A conductive film is also formed on the upper substrate, but since the upper substrate is not covered by a photosensitive film, the conductive film on the upper substrate can be etched, and the electrodes and wiring on the upper substrate that have already been patterned are covered by the insulating film and therefore not etched. The connection between the electrodes and wiring on the upper substrate and the conductive film on the main substrate can be achieved by patterning the connection area to remove the insulating film after the insulating film has been formed. Since the conductive film is then laminated, the connection is perfectly possible. Alternatively, the insulating film on the electrodes and wiring on the upper substrate can be completely (or almost completely) removed. When patterning the conductive film, the pattern can be overlapped and formed on the electrodes and wiring on the upper substrate.

[0056] Next, we will describe the method for forming the central hole. The main substrate is divided (using a main substrate half the thickness of the original, which is called a half-main substrate), and patterning is performed to form the central hole. At this time, an insulating film or the like may be formed on the main substrate, a film for photosensitive film adhesion may be formed, or a film as an etching stopper mask (to prevent etching of the main substrate when the resist is removed) may be formed. The central hole is formed with that pattern. When forming with a curve, wet etching or dry side etching is used. Anisotropic etching is performed for vertical patterns. Next, patterning is performed for forming the through-chamber and the substrate sidewall (including the central hole). If there is a part to form a vertical pattern and a part to form an inclined main substrate side as shown in Figure 9(a), the patterning is performed separately. Furthermore, if there are multiple inclination angles, the patterning is performed each time, and etching is performed separately as vertical etching, inclined etching 1, inclined etching 2, etc. The same applies when leaving a part of the main substrate intact. Basically, a through-chamber is formed in the main substrate. As a result, a central hole (also half), a substrate sidewall with a central hole (also half), and a through-chamber (also half) are formed in the semi-main substrate. The size of the central hole can be freely changed by etching conditions. The inclination angle can also be freely selected by etching conditions. Furthermore, the pattern of the exit section inclined in the planar direction in Figure 9(b) can be freely changed with a mask. Therefore, any desired shape can be manufactured. After this, an insulating film can be formed, a conductive film can be formed, and the conductive film can be patterned. Since the height is halved, film formation and patterning become easier. Insulating films and conductive films can also be formed inside the central hole, and these can be etched away. In this invention, since an LSI process is used, the size of the substrate sidewall and through-chamber can be formed with great precision. In the patterning of the conductive film, there are some parts where patterning the through-chamber is difficult in the deeper areas, but it can be processed with an accuracy of 1 μm to 10 μm, so there is almost no problem with the accuracy of the accelerator of this invention.

[0057] Two identical semi-main substrates can be fabricated and attached together so that their central holes align. The attachment method can be the one described above. Furthermore, if electrostatic anode coupling is required, a thin glass substrate, quartz substrate, etc., can be used as an intermediary. Conductive films of the same size can be formed on the glass substrate, etc., including through-chambers, substrate sidewalls, central holes, and other necessary areas, and then attached to the semi-main substrates sequentially or simultaneously. The same method is possible when using a support substrate as a semi-main substrate. In this case, for example, a semi-main substrate can be attached to the upper substrate, the support substrate removed, then another semi-main substrate can be attached, the support substrate removed, and finally the lower substrate can be attached. Alternatively, a semi-main substrate can be attached to the upper substrate, the support substrate removed, a semi-main substrate can be attached to the lower substrate, the support substrate removed, and then the semi-main substrates can be attached to each other. Finally, contact holes, conductive films within them, and outer electrodes can be formed on the upper and lower substrates. Alternatively, these contact holes and outer electrodes can be formed in advance. Furthermore, if you want to increase the depth of the through-chamber, you can simply repeat the above process multiple times. By making multiple identical pieces simultaneously and stacking and bonding them together, you can easily and freely create devices with deep through-chambers without lengthening the process. For example, by sequentially stacking 0.5mm to 1mm main substrates, you can create an accelerator with an 8mm to 16mm through-chamber after just four stackings. <Other plasma generation methods>

[0058] Figure 3 shows the structure of a linear accelerator for charged particles. In Figure 1, it can be used for 13 and 39, and can also be used independently or as a linear accelerator. Figure 3(a) is a cross-sectional structure in the thickness direction of the substrate (the second substrate (upper substrate) 92 is attached to the upper surface of the main substrate 91, and the third substrate (lower substrate) is attached to the lower surface) (direction of travel of the accelerating cavity 99, i.e., direction of travel of the charged particles G), Figure 3(b) is a plan view parallel to the substrate surface, and Figure 3(c) is a cross-sectional structure in the thickness direction (perpendicular to the direction of travel of the accelerating cavity 99, i.e., direction of travel of the charged particles G).

[0059] The accelerating cavity 99 through which charged particles G pass within the accelerator is formed by attaching the upper part of a through-hole (chamber) 99 (width a1) formed in the main substrate (first substrate) 91 (thickness h1) to the second substrate (upper substrate) 92 and the lower part to the third substrate (lower substrate) 93, creating an airtight space within the through-hole (accelerating cavity) 99. Numerous annular electrodes 94 (continuous electrodes (electrically connected) formed on the side wall of the through-hole 99, the lower surface of the upper substrate 92, and the upper surface of the lower substrate 93) are formed spaced apart in the longitudinal direction (direction of charged particle propagation) within this accelerating cavity 99. (94-1, 2, ...) For example, in the annular electrode 94-1, conductive electrodes 94S1 and 94S2 are formed on the side walls of a through hole 99 with a depth h1 and a width a1. Furthermore, a conductive electrode 94U is formed on the lower surface of the upper substrate 92, and a conductive electrode 94B is formed on the upper surface of the lower substrate 93. These conductive electrodes 94S1, 94S2, 94U, and 94B are electrically connected, with a length (longitudinal direction of the accelerating cavity 99) k1, and a more precise shape is rectangular. The thickness of the conductive electrodes is t1 (assuming they are all constant), the distance b1 between conductive electrodes 94S1 and 94S2 is a1-2t1, and the distance d4 between conductive electrodes 94U and 94B is h1-2t1. For example, if ai=1mm, h1=1mm, and the thickness of the conductive film is 10μm, then bi=0.98mm and di=0.98mm.

[0060] Next to this annular electrode 94-1, an annular electrode 94-2 with length k2 is formed at a distance j1, and next to that, an annular electrode 94-3 with length k3 is formed at a distance j2, and a number of annular electrodes 94 are formed inside the accelerating cavity 99. In the direction of propagation of the charged particle G, the length of the i-th annular electrode 94-i is denoted as ki, and the distance to the next (i+1)th annular electrode 94-(i+1) is denoted as ji. Contact holes are formed in the upper substrate 92 of the annular electrodes 94 (94-i: i=1, 2, ...), contact electrodes 95 (95-i: i=1, 2, ...) are formed in these contact holes, and upper electrodes 96 (96-i: i=1, 2, ...) are formed to connect to the contact electrodes 95, and the upper electrodes 96 are electrically connected to the conductive electrodes 94U formed on the lower surface of the upper substrate 92. Furthermore, contact holes are formed in the lower substrate 93 of the annular electrode 94 (94-i: i=1, 2, ...), contact electrodes 97 (97-i: i=1, 2, ...) are formed in these contact holes, and lower electrodes 98 (96-i: i=1, 2, ...) are formed to connect to the contact electrodes 97, and the lower electrodes 98 are electrically connected to the conductive electrodes 94B formed on the upper surface of the lower substrate 93.

[0061] Thus, each annular electrode 94(94-i) formed on the inner surface of the main substrate 91 of the cavity 99 can have a voltage applied from the outer electrodes 96(96-i) and 98(98-i) formed on the upper and lower substrates, but it is also sufficient to apply a voltage to only one of them. Therefore, it is sufficient to apply a voltage to only one of them, but applying a voltage to both simultaneously will effectively and immediately bring the inside of each annular electrode 94(94-i) to the same potential. If a voltage opposite to the potential of the ion G is applied to each annular electrode 94(94-i), the ion will accelerate and move forward due to the potential Vi of each electro-annular electrode 94(94-i). For example, if the mass of the ion is m and the rate of increase at each annular electrode 94(94-i) is Δui, then 1 / 2m(Δui) 2 =zeV holds true. Therefore, by arranging many of them together, ions can be made very fast. For example, m=10 -25If we set kg, z=1, and V=10V, then Δui=5.6km / sec (per electrode), and if we arrange 10,000 electrodes, the speed will be 56,000km / sec. In other words, if we set ki=10μm and ji=5μm, we only need to create an accelerating cavity with a length of 15cm. In this way, ultrafast ions can be realized over very short distances. However, since the ions are attracted to the annular electrodes and diverge, it is also necessary to focus them. To focus the ions, we can either place electrodes that apply a voltage at the same potential as the ions, or apply a quadrupole magnetic field. By combining these methods, we can obtain ions with the desired speed. In addition, in the accelerating chamber shown in Figure 3, there is one or more openings 100 in the upper substrate 92 and / or lower substrate 93, and the cavity 99 can be vacuumed or the inside can be cleaned or purged by introducing an inert gas through these openings 100.

[0062] An accelerating cavity can also be fabricated by arranging multiple substrate sidewall electrodes with a central hole. Figure 10 shows an accelerating cavity with multiple substrate sidewall electrodes having a central hole. Figure 10(a) is a cross-sectional view perpendicular to the substrate surface, Figure 10(b) is a plan view parallel to the substrate surface, and Figure 10(c) is a cross-sectional view at A1-A2, viewed from the left and right directions of Figures 10(a) and 10(b). As shown in Figure 10, a through-chamber 104 is formed in the main substrate 101, penetrating from its top to its bottom surface. The upper part of the through-chamber 104 is attached to the upper substrate 102, and the lower part is attached to the lower substrate 103. The lateral surface of the through-chamber 104 is the side surface of the main substrate 101. Charged particles G (indicated by dashed arrows), such as ions generated in the plasma generation chamber or ionization chamber 104-1, which are through-chambers, enter the accelerating cavity chamber 104-2, which is a through-chamber, through the central hole 105-0 provided in the center of the substrate sidewall 101-0. Multiple substrate sidewalls 101-1 (101-1, ..., 4, ...) are arranged in the accelerating cavity chamber 104-2, each having a central hole 105 (105-1, ..., 4, ...). Conductive film electrodes 106 (106-1, ..., 4, ...) are formed around each substrate sidewall 101 (101-1, ..., 4, ...). These conductive film electrodes 106 (106-1, ..., 4, ...) are also laminated on the inner surface of the central hole 105 (105-1, ..., 4, ...) of each substrate sidewall 101 (101-1, ..., 4, ...). These conductive film electrodes 106 (106-1, ..., 4, ...) are connected to conductive film wiring 107 (107-1, ..., 4, ...) formed on the lower surface of the upper substrate 102, and / or to conductive film wiring 108 (108-1, ..., 4, ...) formed on the upper surface of the lower substrate 103. These conductive film wiring 107 (107-1, ..., 4, ...) are connected to outer electrode wiring 110 (110-1, ..., 4, ...) formed on the upper substrate 102 through contact holes and contact wiring 109 formed within the upper substrate 102. Furthermore, these conductive film wirings 108 (108-1, ..., 4, ...) are connected to the outer electrode wirings 112 (112-1, ..., 4, ...) formed beneath the lower substrate 103 through contact holes and contact wirings 111 formed within the lower substrate 103.

[0063] A voltage can be applied to the substrate sidewall electrodes and wiring 106 from the outer electrodes and wiring 112. Normally, this voltage is applied inversely to the charge of the charged particle, so a charged particle G that enters the accelerating cavity chamber is attracted and accelerated by the first substrate sidewall electrode wiring 106-1 and passes through the central hole 105-1 of the substrate sidewall, then attracted and accelerated by the next substrate sidewall electrode wiring 106-2 and passes through the central hole 106-1 of the substrate sidewall, and so on, being accelerated by repeating this process until it is attracted and accelerated by the last substrate sidewall electrode wiring 106-n and passes through the central hole 106-n of the substrate sidewall, and exits into the adjacent chamber 104-3, which is a through-chamber (assuming there are n substrate sidewall electrodes and wirings). The adjacent chamber 104-3 is, for example, the cavity chamber 14 or the deflection electromagnet chamber 15 in Figure 1. Between the accelerating cavity chamber 104-2 and the adjacent chamber 104-3, there is a substrate sidewall 101-5 with a central hole 105-5, and charged particles enter the adjacent chamber 104-3 through this central hole 105-5. Because the area through which charged particles G pass is narrow in this substrate sidewall electrode with a central hole, the charged particles G do not spread out much and pass near the center. However, some of the charged particles are still attracted towards the electrode, so it is desirable to apply a voltage at the same potential (positive or negative) as the charged particles at various points to focus the charged particles. Here, since the potential is the same as the charged particles, the particles are slowed down slightly, but they are accelerated again by the next accelerating electrode. By repeating this convergence / divergence, acceleration / deceleration, a large number of substrate sidewall electrodes with central holes are arranged to accelerate the particles overall. Because this invention uses an LSI process, it is possible to use very small central holes and short substrate sidewalls that could not be realized conventionally, so a large number of substrate sidewall electrodes can be arranged over a short distance, and the particles can be accelerated to a large speed over a short distance. Furthermore, since a small applied voltage is required, a large power supply is unnecessary. However, a larger power supply can be used to apply a higher voltage, in which case a greater acceleration can be achieved.

[0064] Furthermore, by gradually applying a voltage to each substrate sidewall electrode in the direction of the charged particle G's movement, a large acceleration can be obtained in a short time and over a short distance. Alternatively, by applying a high-frequency voltage to each substrate sidewall electrode and synchronizing them, a large overall acceleration can be obtained while repeatedly converging and diverging, and accelerating and decelerating. The accelerating cavity chamber 104-2 can also be provided with an opening 113 in the upper or lower substrate to perform vacuuming, cleaning, or purging. In addition, an opening 113 can be provided between each substrate sidewall to perform vacuuming, etc., on each.

[0065] The substrate side walls 105-0 and 105-5 between adjacent chambers do not need to be placed if they are not necessary. For example, they do not need to be placed if it is not a problem for charged particles G from adjacent chamber 104-1 to collide with the front side of the first substrate side wall electrode 106-1, if the pressure with adjacent chamber 104-1 can be the same, or if the charged particles G can be sufficiently accelerated and converged to pass through the central hole 105-1 of the first substrate side wall electrode 106-1. Also, the size of the central hole 105-0 of the substrate side wall 101-0 can be made smaller than the size of the central hole 105-1 of the first substrate side wall electrode 106-1 to make it easier for charged particles G to be attracted to the first substrate side wall electrode 106-1. It is desirable that the size of the central holes 105 (105-1, ...) of the substrate side wall electrodes 106 (106-1, ...) be the same so that the acceleration can be made uniform. It is desirable that the size of the central hole 105-5 in the substrate side wall 101-5, which serves as a partition between this chamber and the adjacent chamber 104-3, be larger than the size of the central hole 105 (105-4 in the figure) in the last substrate side wall electrode 106 (101-4 in the figure), so that charged particles do not collide with the substrate side wall 101-5.

[0066] Figure 4 shows an example of a charged particle accelerating tube using a high-frequency waveguide, which is a type of disc-loaded traveling wave accelerating tube. Figure 4(a) is a schematic cross-sectional view perpendicular to the substrate surface and parallel to the direction of propagation of the charged particle beam G, Figure 4(b) is a schematic cross-sectional view parallel to the substrate surface, and Figure 4(c) is a schematic cross-sectional view perpendicular to the substrate surface, viewed from the left and right directions of Figures 4(a) and 4(b), and is a cross-sectional view of the central hole. The charged particle accelerating tube 200 shown in Figure 4 consists of a through-hole cavity 204 formed in the main substrate 201, which serves as a passage for charged particles, and an upper substrate 202 and a lower substrate 203 attached to the upper and lower surfaces of the main substrate 201, which make the through-hole cavity 204 an airtight space. The charged particle accelerating tube 200 is divided on both sides in the direction of charged particle propagation (longitudinal direction of the through-cavity) G by substrate partitions 201S-A and 201S-B, which have a central hole, and further divided between them are multiple spaces formed by substrate partitions 201S-i (i=1, 2, 3, ...) which also have a central hole, and on both sides of these spaces there are high-frequency inlet ports 208 for microwaves, etc., which are opened in the upper substrate 202 (lower There is a space (sometimes referred to as a high-frequency inlet chamber) 204C-A (which may be located in the substrate 203) and a space (sometimes referred to as a high-frequency outlet chamber) 204C-B (which may be located in the upper substrate 202, or in the lower substrate 203) where a high-frequency outlet 209 for microwaves, etc., is located. Between these are multiple spaces (sometimes referred to as acceleration cavities) 204C-i (i=1, 2, 3, ...) for accelerating charged particles. In addition, a vacuum exhaust port 210 is appropriately located in the upper substrate 202 or the lower substrate 203 of these spaces. This vacuum exhaust port 210 is connected to a vacuum pump 213, and the space through which the charged particles pass is kept in a near-vacuum state. In Figure 4, the vacuum exhaust port 213 is located in the high-frequency inlet chamber or the high-frequency outlet chamber, but it is not limited to these and may be located in other spaces or cavities.

[0067] When a semiconductor substrate such as a silicon substrate is used as the main substrate in this invention, the main substrate has high electrical resistance, so a conductive film 206 is formed in the numerous through-hole cavities 204 within the charged particle accelerating tube 200. Specifically, in the cavities 204 formed in the main substrate 201, conductive films 206S1 and 206S2 are formed on the side surfaces of the cavities in the main substrate 201, a conductive film 206U is formed on the lower surface of the upper substrate 202, and a conductive film 206B is formed on the upper surface of the lower substrate 203. Figure 4(c) is a cross-sectional view of the central hole 205, so the conductive films 206S1, S2, U, and B are not visible, but they are depicted as if they were transparent. The central hole 205 is located in the center of the substrate sidewall 201S-i (i=1, 2, ...), and a conductive film 206 is also formed in an annular shape on the inner surface of the central hole 205. Although the cross-section of the central hole 205 is shown as rectangular, the central hole 205 is formed by etching (wet or dry) while the main substrate 201 is divided, so it can be formed into various shapes such as a trapezoidal shape with the top and bottom joined, an ellipse, or a circle.

[0068] Since high-frequency current flows through the inner walls of the accelerating cavity 204C-i (i=1, 2, 3, ...), the conductive film 206 should have good conductivity; for example, copper, gold, silver, aluminum, tungsten, and cobalt are better. If the temperature may rise, a metal film with a high melting point is preferable. The charged particle accelerating tube of the present invention can be made smaller, so the entire device can be cooled to a low temperature using a superconducting film. Examples of superconducting films include niobium (Nb), niobium-titanium (Nb-Ti), niobium-tin (Nb-Sb), magnesium diboride, and oxide high-temperature superconductors (yttrium-based, bismuth-based, etc.). These can be formed as sputtered films or coated films. If the thickness of the main substrate 201 is h2 and its width (planar width) is a2, and the thickness of the conductive film 206 is t2, then the depth d5 ​​of the through-hole cavity 204 is h2-2t2, and the width b2 of the through-hole cavity 204 is a2-2t1. When forming an insulating film (for example, a silicon oxide film) or an adhesion-improving film (for example, a Ti or TiN film) between the main substrate 201 and the conductive film 206, or when forming an insulating film (protective film) on top of the conductive film 206, the thickness of those films must also be considered.

[0069] Charged particles G are emitted from a charge generator or the like, pass through the cavity 204-1, and enter the charged particle accelerating tube 200 through the central hole 205 of the substrate partition wall 201S-A, which is the entrance to the charged particle accelerating tube 200. After entering the high-frequency introduction space 204C-A, the charged particles G pass through the central hole 205 of the substrate partition wall (side wall) 201S-1 and enter the acceleration space 204-1, then successively pass through the central holes 205 of the substrate partition walls 201S-i (i=1, 2, 3, ...) and enter the acceleration space 204C-i (i=1, 2, 3, ...), and finally enter the high-frequency derivation space 204C-B, then pass through the central hole 205 of the substrate partition wall 201S-B, which is the exit of the charged particle accelerating tube 200, and exit into the cavity 204-2 on the outside of the charged particle accelerating tube 200. The high-frequency current 211 enters the high-frequency introduction space 204C-A from the high-frequency inlet 208, passes through the central hole 205 of each substrate partition, forms a high-frequency electric field that accelerates charged particles in each acceleration space 204C-i (i=1, 2, 3, ...), exits into the high-frequency exit space 204C-B, and exits as high-frequency current 212 from the high-frequency outlet 209. Consequently, the charged particles are successively accelerated by the accelerating electric field generated in each acceleration space 204C-i (i=1, 2, 3, ...), and exit the charged particle accelerating tube 200 through the central hole 205 of the substrate partition 201S-B.

[0070] The accelerating tube 200 may also be equipped with a focusing electromagnet 207 to focus the divergence of the accelerated charged particles. The focusing electromagnet 207 is installed in the cavity 204 after the charged particles G exit the central hole 205 of the substrate partition wall 201S-B. For example, as shown in Figure 4, a quadrupole electromagnet 207 (207-1, 2, 3, 4) is arranged around the cavity 204. Figure 4(d) shows the cross-sectional structure perpendicular to the longitudinal direction of the cavity 204 in the portion where the quadrupole electromagnet is arranged. Coils 207-2 and 207-4 are formed on both lateral sides of the cavity 204, flanking the substrate sidewalls 201S-S1 and 201S-S2. The magnetic flux density (or magnetic field) of coil 207 becomes stronger the closer it is to the center of cavity 204, making it easier to control charged particles (charged particles G pass through the center of cavity 204). Therefore, thinner substrate sidewalls 201S-S1 and 201S-S2 are preferable. Since LSI processes can be used, very thin substrate sidewalls, such as 10 μm to 1000 μm, can be formed.

[0071] An upper substrate 202 exists above the cavity 204. Coil 207-1 is positioned above the upper substrate 202, embedded inside the upper substrate 202, or on top of or inside the upper substrate 202. The closer coil 207 is to the center of the cavity 204, the stronger the magnetic flux density (or magnetic field) becomes, making it easier to control charged particles. Therefore, when positioned above the upper substrate 202, coil 207-1 should be brought as close as possible to the top surface of the upper substrate 202. Optimally, coil 207-1 should be in contact with the top surface of the upper substrate 202. When coil 207-1 is embedded inside the upper substrate 202 or formed inside the upper substrate 202, the upper substrate 202 located between the cavity 204, the bottom surface of coil 207-1, and the cavity is upper substrate 202-U, but the thickness of this portion is thinner than the thickness of the upper substrate 202. The thinner the upper substrate 202-U, the better, but it can be made very thin, for example, between 10 μm and 1000 μm.

[0072] A lower substrate 203 exists at the bottom of the cavity 204. Coil 207-3 is positioned below this lower substrate 203, embedded inside the lower substrate 203, or inside the lower substrate 203. The closer coil 207 is to the center of the cavity 204, the stronger the magnetic flux density (or magnetic field) becomes, making it easier to control charged particles. Therefore, when positioned below the lower substrate 203, coil 207-3 should be brought as close as possible to the bottom surface of the lower substrate 203. Optimally, coil 207-3 should be in contact with the bottom surface of the lower substrate 203. When coil 207-3 is embedded inside the lower substrate 203 or formed inside the lower substrate 203, the lower substrate 203 located between the cavity 204 and the top surface of coil 207-3 is lower substrate 203-B, and the thickness of this portion is thinner than the thickness of the lower substrate 203. The thinner the lower substrate 203-B, the better, but it can be made very thin, for example, between 10 μm and 1000 μm.

[0073] As shown in Figure 4(d), when the lateral center line of the main substrate 201 is C1, the center O1 of the cavity 204 lies on the lateral center line C1, and coils 207-2 and 207-4 are positioned within the main substrate 201 so that their axes align with the lateral center line C1. Coils 207-1 and 207-3 are also positioned so that their axes align with the vertical center line C2, which passes through the center O1 of the cavity 204 and is perpendicular to the lateral center line C1. By arranging the quadrupole electromagnets (coils) in this way, the magnetic field distribution within the cavity 204 can be made nearly symmetrical, allowing charged particles to be focused near the center O1 of the cavity 204. In particular, by making the thickness of the substrate sidewalls 201S-S1 and 201S-S2 approximately equal, giving the same characteristics to coils 207-2 and 207-4, and arranging them symmetrically with respect to the center O1 of the cavity 204, and further by making the thickness of 202-U and 202-B approximately equal, giving the same characteristics to coils 207-1 and 207-3, and arranging them symmetrically with respect to the center O1 of the cavity 204, and further by giving the same characteristics to coils 207-1, 207-2, 207-3 and 207-4, the magnetic field distribution within the cavity 204 can be made nearly symmetrical. However, even if the characteristics and arrangement of the constituent coils, the substrate sidewalls and the thickness of the substrate differ somewhat, the quadrupole electromagnet of the present invention allows for the free setting of the voltage applied to individual coils and the free change of the internal magnetic field of the cavity 204, making it easy to focus the beam of charged particles near the cavity center O1. Furthermore, the center O1 of the cavity 204 is in the direction G of the charged particle's movement, and therefore, it is desirable that the center of the central hole 205 coincide with the center O1 of the cavity 204.

[0074] If the width of the substrate side wall 201S-i, i.e., the length of the central hole 205, is m1, and the length of the accelerating cavity 204C-i (the longitudinal size of the charged particle accelerator 200) is p1, then the distance between the high-frequency introduction chamber 204C-A and the high-frequency derivation chamber 204C-B is (n+1) × m1 + n × p1. (When the charged particle accelerator 200 has n accelerating cavities) the accelerating electric field distribution can be changed by changing the length p1 of each accelerating cavity and the length m1 of the central hole 205. The accelerating electric field distribution can also be changed by changing the size of the cavity 204 (a2, h2) and the size of the central hole 205 (for example, the length and width if the central hole 205 is rectangular, or the diameter if the central hole 205 is circular). Since the charged particle accelerator of the present invention can be manufactured using an LSI process, these sizes can be easily and inexpensively changed. In addition, the size and number of quadrupole electromagnets can also be freely changed to match the size of the cavity 204.

[0075] Next, the method for fabricating the electromagnet (coil) will be explained. Figure 11 shows one embodiment of the method for fabricating the electromagnet (coil). The coil fabrication substrate 115-1 is attached to the support substrate 114-1. Since the support substrate 114-1 will be separated from the coil fabrication substrate 115-1 later, attachment using a softening adhesive (softening temperature T1) is preferable. The support substrate 114-1 is an insulating substrate such as a glass substrate, stone substrate, alumina substrate, plastic, epoxy substrate, polymer substrate, semiconductor substrate such as Si, or conductive substrate such as Cu, Al. The coil fabrication substrate 115-1 is a non-magnetic substrate, such as an insulating substrate such as a glass substrate, stone substrate, alumina substrate, ceramic substrate, plastic, epoxy substrate, polymer substrate, or semiconductor substrate such as Si. As shown in Figure 11(a), a photosensitive film pattern for the coil wire pattern is formed on the coil fabrication substrate 115-1, and the coil fabrication substrate 115-1 is etched. Vertical etching that is faithful to the photosensitive film pattern is desirable for this etching. Alternatively, a coil fabrication substrate 115-1 with a coil wire pattern formed by die punching may be attached to the support substrate 114-1. Alternatively, a plastic or polymer resin film with a coil wire pattern formed on it may be attached to the support substrate 114-1. When the coil fabrication substrate 115-1 is a semiconductor substrate such as Si, a conductive film is laminated on the side surface of the recess to prevent short circuits between coil wirings.

[0076] Next, the coil wire patterns in the recesses are filled with a conductive film. The conductive film can be, for example, Cu, Ni, Cr, Au, Al, W, Mo, Ti, Zr, various solders, alloys or composite metals thereof, or various silicide films or superconductors. Methods for this filling include layering using CVD or PVD and then polishing (e.g., CMP) to fill only the recesses with the conductive film, filling the recesses with the conductive film using selective CVD, filling the recesses with the conductive film using plating, or applying a conductive paste. These can also be polished to flatten them. By these methods, the first layer (116-1) of a coil wiring pattern with width a and depth c1 is completed. The planar pattern of the first layer is, for example, a wiring pattern with length d (width a) and distance b, as shown in Figure 11(g).

[0077] Next, the second layer pattern is fabricated in the same manner. For the second layer, the coil fabrication substrate 115-2 is attached to the support substrate 114-2, and the second layer coil wiring pattern 116-2 is formed using a photosensitive film or the like. The cross-sectional pattern of the second layer pattern is the same as in Figure 11(a), but the planar pattern is a rectangular pattern with width a, distance b, and height e, as shown in Figure 11(h), so that it matches the pattern of the first layer when superimposed. The coil wire width is width a × height e, so it is best to make e approximately equal to a. Next, as shown in Figure 11(b), the second layer coil wiring pattern is attached to the first layer coil wiring pattern while aligning the patterns. That is, the coil fabrication substrate 115-2, which has the second layer coil wire pattern attached to the support substrate 114-2, is attached to the coil fabrication substrate 115-1, which has the first layer coil wire pattern attached to the support substrate 114-1. As for the bonding method, room temperature bonding, diffusion bonding, high-temperature bonding, and electrostatic anode bonding can also be used when coil fabrication substrates 115-1 or 2 are insulating substrates such as glass or quartz substrates, and coil fabrication substrates 115-2 or 1 are semiconductor substrates such as Si. Bonding can also be done using adhesives; conductive adhesive is used for the bonding areas between conductive films, and insulating adhesive is used for other parts. Conductive adhesive can also be used for the bonding areas between conductive films in other bonding methods. If the wiring distance b is 10 μm or more (even now), conductive adhesive can be applied to the bonding pattern using a metal mask, and if a photosensitive conductive adhesive or a photosensitive pattern + etching method is used, conductive adhesive can be applied to the bonding pattern even if the wiring distance b is 1 μm. Furthermore, solder can also be applied or plated to the bonding area for adhesion. If the recess of the second layer is also the depth of c1, then C2 becomes 2c1. For bonding the coil fabrication substrates 115 together, a thermosetting adhesive is preferable to prevent separation during subsequent heat treatment. When using solder or thermoplastic adhesive, care must be taken to prevent the coil fabrication substrates 115 from moving or separating during subsequent heat treatment, which could cause pattern misalignment.

[0078] Next, the support substrate 114-2 is removed. The adhesive used to bond the support substrate 114-2 and the coil fabrication substrate 115-2 is a thermoplastic adhesive, and an adhesive is selected such that T1 > T2 when the softening temperature is T2. As a result, only the support substrate 114-2 can be separated at a temperature between T1 and T2. Figure 11(c) shows the state after the support substrate 114-2 has been separated. The patterns for the third layer and beyond are the same as the second layer, and by attaching these one after another, wiring in the height direction of the coil can be created. However, stacking them one by one is time-consuming, so as shown in Figure 11(d), two stacked sheets are then stacked together to make four sheets (state in Figure 11(d)), and then four stacked sheets are stacked together to make eight sheets. If c1 = 0.1 mm, then five attachments will result in a thickness of 0.8 mm.

[0079] The final coil wiring pattern needs to be connected spirally as a coil, so it will be the wiring pattern shown in Figure 11(i). The first layer has the wiring pattern shown in Figure 11(g), and the top layer has the wiring pattern shown in Figure 11(i). (The reverse is also acceptable.) The wiring pattern between these is the pattern shown in Figure 11(h). When a predetermined height c4 is reached, the support substrate on the top layer side is separated, and then the photosensitive film 117 is attached (coated) to form the photosensitive film pattern 117. This is used as a mask to etch away the coil fabrication substrate 115. Since the support substrate 114-1 is not yet separated, etching with a high selectivity ratio between the coil fabrication substrate 115 and the support substrate 114-1 is desirable. The etching selectivity ratio can be easily increased by using different materials for the support substrate 114-1 and the coil fabrication substrate 115. For example, if the support substrate 114-1 is Si or glass, and the coil fabrication substrate 115 is glass or Si. Alternatively, unnecessary parts can be separated by cutting using the dicing method. For example, when attaching the support substrate 114-1 and the coil fabrication substrate 115-1, by using an adhesive that can be separated by light irradiation in the areas to be separated as unnecessary parts, and using a regular thermoplastic adhesive in the other areas, it is possible to dic the coil fabrication substrate 115 and the support substrate 114-1, cutting only a small portion (in the depth direction), and then separating the unnecessary parts by light irradiation. To attach the adhesives separately, for example, one can apply them using a mask. As a result, a coil 118 with the shape shown in Figure 11(f) is attached to the support substrate 114-1.

[0080] Next, electromagnets (coils) 118-1 and 118-2, formed on the support substrate 114-1, are inserted into the main substrate 201, which is attached to the lower substrate 203 and has coil insertion cavities 120 (120-1, 2) and a cavity 204-2 (see Figure 4) through which the charged particle beam G passes. Conductive electrodes and wiring 119 for connecting the terminals of the coil 118 are formed on the lower substrate 203, so the coils are inserted so as to match this pattern. The size of the coils 118 is adjusted so that the central axis of the coil 118 is in the center of the main substrate 201. It is desirable to apply conductive adhesive or solder metal to the connection parts in advance. If these are softened and applied by applying heat, the height can also be adjusted vertically. If an insulating film is laminated or an insulating sheet is attached to the wiring pattern of the coil 118 and only the connection parts are opened up, conductive adhesive can be applied more broadly, ensuring a secure connection and making height and horizontal adjustments easier.

[0081] Furthermore, if all the terminals on the coil side are located on the opposite side (as shown in coil 118-1 in Figures 11(j) to (m)), there is no need to provide conductive film electrodes and wiring patterns 109 on the lower substrate 203. This allows insulating adhesive to be applied to the lower substrate 203 and / or to the underside of the coil 118, ensuring secure attachment of the coil 18 and making height and horizontal adjustments easy. For example, the horizontal and pressing pressure of the lift press on the support substrate 114 can be easily adjusted. The size of the coil insertion cavity 120 (120-1, 2) is not particularly restricted and can be made considerably larger than the coil 118, so inserting the coil is not a problem. Also, if the conductive film electrodes and wiring are formed large enough, there are no particular problems with connecting to the coil side. The distance between the end face of coil 118 (right side for coil 118-1, left side for coil 118-1) and the center of cavity 204-2 affects the magnetic field exerted on the charged particles, but the current insertion error is between 1 μm and 10 μm, so the effect is not significant.

[0082] Furthermore, since the distance between the two coils 118-1 and 118-2 does not change at all, the combined magnetic field exerted by both on the center of the cavity 204-2 hardly changes. In order to make the magnetic field uniform throughout the cavity 204-2, it is desirable to make the size of the coil (end face) larger than the size of the cavity 204-2 (in the depth direction). However, this can be achieved by thinning the lower substrate 203 in the coil insertion cavity 120 (120-1, 2) in advance, making the depth of the coil insertion cavity 120 (120-1, 2) deeper than the cavity 204-2. In that case, the size of coil 118 should naturally be increased accordingly.

[0083] After fixing the coil 118 to the lower substrate 203 in the coil insertion cavity 120 (120-1, 2), the support substrate 114-1 is separated. In this method, for example, a thermosetting adhesive with a curing temperature T3 lower than T1 is used to fix the coil 118 to the lower substrate 203, and then the temperature is raised to T1 or higher to separate the support substrate 114-1. (Figure 11(k)) Next, as shown in Figure 11(l), the upper substrate 121 on which conductive film electrode wiring 121 connecting to the coil terminals is formed is attached to the main substrate 201 in alignment with the terminals of the coil 118. If a wiring pattern is formed on the upper part of the coil 118, an insulating film can be laminated or an insulating film can be attached, and conductive adhesive or solder metal can be applied or formed with the connection part open before attachment.

[0084] Next, a contact hole conductive film wiring 122 is formed on the upper substrate 202 to connect to the conductive film electrode wiring 121, and an outer electrode wiring 123 (123-1, 2, 3) is formed to connect to it. A contact hole conductive film wiring 124 is also formed on the lower substrate 203 to connect to the conductive film electrode wiring 119, and an outer electrode wiring 125 is formed to connect to it. As a result, coils 118 (118-1, 2) are placed in coil insertion cavities 120 (120-1, 2) on both sides of the cavity 204-2, sandwiched between the main substrate side walls 201S-S2 and 201S-S1. Moreover, they are positioned very accurately (the current alignment error is less than 10 μm), so the magnetic field inside the cavity is uniform. Current can be passed through coil 118-1 from the outer electrodes 123-1 and 123-2, and current can be passed through coil 118-2 from the outer electrodes 123-3 and 125. (Figure 11(m))

[0085] In the process shown in Figure 11, the first layer pattern is attached to the support substrate. However, the first layer coil pattern can be fabricated on the lower substrate, and the support substrate can be formed by attaching the second layer onwards. This method eliminates the need for the initial first layer process. Similarly, the final top layer pattern can be formed on the upper substrate (underside). This further eliminates the need for the top layer process. Furthermore, in this case, the coil wiring patterns from the second layer to the (n-1)th layer (with the nth layer as the top layer) are the same, so they can be simply stacked, or the stacked layers can be layered to create the desired size. Finally, these can be attached to the first layer pattern on the lower substrate, and the (n-1)th layer can be attached to the top layer pattern on the upper substrate.

[0086] In the process shown in Figure 11(j), substrate sidewalls 201S-S1 and 201S-S2 act as partitions between the cavity 204-2 through which the charged particle beam G passes and the coil insertion cavity 120 (120-1, 2). However, these substrate sidewalls 201S-S1 and 201S-S2 act as partitions that weaken or disturb the magnetic field, so they can be removed. However, since charged particles pass through cavity 204-2, the pressure in the cavity must be similar to that of cavity 204-2. For this purpose, openings for vacuuming can also be provided in the upper and lower substrates 202 and 203 of the coil insertion cavity 120 (120-1, 2). If the substrate side walls 201S-S1 and 201S-S2 are not provided, the cavity 204-2 and the coil insertion cavity 120 (120-1, 2) will be the same cavity, so when inserting coils 118-1 and 2 there is no need to worry about coils 118-1 and 2 colliding with the substrate side walls 201S-S1 and 201S-S2, making insertion easier.

[0087] Furthermore, the margin (sparity distance) during insertion does not need to be considered for the distance between the substrate sidewalls 201S-S1 and 2 and the coils 118-1 and 2. Therefore, the distance between coils 118-1 and 118-2 can be shortened, which reduces the current required to create the magnetic field in the cavity. Alternatively, the magnetic field can be further strengthened. Alternatively, if a central hole is made in the substrate sidewalls 201S-S1 and 201S-S2, the magnetic field in that area will not be affected (by the material) of the substrate sidewalls 201S-S1 and 201S-S2, and the pressure in cavity 204-2 will not be significantly affected by the coil insertion cavity 120 (120-1, 2).

[0088] Furthermore, although a support substrate 114-1 was used, if the upper substrate 202 or lower substrate 203 were used instead, the support substrate could be used without removing it in the process shown in Figure 11(j). Also, similar to Figure 12(d), if a protrusion is provided on the support substrate 114-1 to fabricate the coil 118, the support substrate 114-1 can be removed without contacting the main substrate 201 during coil insertion (the process shown in Figure 11(j)), thus avoiding damage to the main substrate 201. As shown in Figure 11(m), electrodes connected to the wiring ends of the coil can be freely formed on either the upper substrate 202 or the lower substrate 203. In Figure 11(j), an electrode wiring pattern was formed on the lower substrate 203, so it was necessary to align the terminals of the coil 118 with that electrode wiring pattern. However, it is also possible to avoid forming an electrode wiring pattern on the lower substrate 203, thus eliminating the need to align it during coil insertion and allowing for a faster process. Furthermore, it is not necessary to use a conductive adhesive; the lower substrate 203 can be attached using a single type of ordinary adhesive (for example, an insulating adhesive). Also, if the upper substrate 202 or the lower substrate 203 is used instead of the support substrate 114-1, it is not necessary to bring the coil 118 into contact with the lower substrate 203, and the upper substrate 204 to which the coil 118 is attached only needs to be attached to the main substrate 201, thus eliminating the need for precise alignment.

[0089] In the process shown in Figure 11, the coil size is a=e=30μm, b=20μm, d=1mm (=5×10). 3 If the diameter is μm, height = 1 mm, and length = 5 mm, then a coil of 100 turns can be made, and if the coil wire is made of Cu, then 10 6 A / cm 2 If it is possible to pass a current of this magnitude (which is possible given the electromigration resistance), then a current of I=9A can be passed through the coil. Therefore, the magnetic field Hc = 8 × 10⁻¹⁰ at the center of the end face of the coil. 5 It will be A / m.

[0090] Furthermore, the magnetic field generated can be increased by inserting a core with a high relative permeability μ into this coil. Therefore, a method for inserting a core with a high relative permeability μ into a coil used in the accelerator of the present invention will be described. Similar methods to this method have already been described in Japanese Patent Application Publication No. 2012-134329, and these are also applicable to the present invention. Figure 12 is a diagram showing a method for manufacturing a high-performance coil with a core with a high relative permeability μ inserted. In the embodiment shown in Figure 12, four types of coil manufacturing patterns are used. Figures 12(g) to (j) are plan views illustrating these patterns. Figure 12(g) is the same as Figure 11(g), but the area corresponding to the core insertion hole is shown by a dashed line A. Also, the part corresponding to the outer shape of the coil is shown by a dotted line B. In Figures 11 and 12, the same substrate (layer) exists on the outside of the coil in each layer. In the process shown in Figure 11(e), the outer substrate layer 115 was etched off in one go using the photosensitive film pattern 117 as a mask. However, it is also possible to form a photosensitive film pattern in the area indicated by the dotted line B after adhering to the support substrate 114, use that as a mask to etch off the substrate 115 outside the area indicated by the dotted line B, and then adhere and stack only the coil formation area. Alternatively, it is possible to adhere only the coil portion without adhering to the support substrate, stack them, and finally attach the coil to a predetermined part of the support substrate 114 to create the state shown in Figure 11(f).

[0091] Figure 12(a) is the same as Figure 11(c). That is, coil fabrication substrate 130-1 is a coil fabrication substrate 115 having the coil wiring pattern 116 shown in Figure 12(g). The coil insertion area is rectangular in shape, as shown by the dashed line A, and on the vertical side (the width side of the coil), it is inside the coil wiring pattern 116 shown in Figure 12(g), and on the horizontal side (the axial direction of the coil), it protrudes from the coil wiring on both sides. The dotted line B is the outer shape of the coil. Coil fabrication substrate 130-2 is a coil fabrication substrate 115 having the coil wiring pattern 116 shown in Figure 12(h). This coil wiring pattern 116 is stacked in the height direction of the coil to form the coil wiring pattern. In the patterns of Figures 12(g) and (h), the coil insertion area A is the same as the coil fabrication substrate 115 and is flat in plan view. The pattern attached on top of this is the coil fabrication substrate 115 having the pattern shown in Figure 12(i). In other words, coil fabrication substrate 130-3 is a coil fabrication substrate 115 having the pattern shown in Figure 12(i). In Figure 12(i), the coil insertion area A is cut out, creating a cavity. This cavity can be created by attaching the coil fabrication substrate 115 shown in Figure 12(h) to a support substrate, creating a window, and then etching or punching out the coil fabrication substrate 115 with a die. Furthermore, it can also be created by etching or punching out the coil fabrication substrate 115 shown in Figure 12(h), which has already been shaped to the size of the coil area B. On top of this coil fabrication substrate 130-3, a coil fabrication substrate 115 with the coil insertion area A cut out, as shown in Figure 12(i), is attached, and a predetermined number of these are attached. (Figure 12(b)) Here, coil fabrication substrates 130-4, 5, and 6 are coil fabrication substrates 115 having the pattern shown in Figure 12(i). Multiple coil fabrication substrates 115 having the pattern shown in Figure 12(i) (all of which have the coil insertion area A cut out, creating a cavity) can be attached together to a coil fabrication substrate 130-2, which is a coil fabrication substrate 115 in which the coil insertion area A shown in Figure 12(a) and Figure 12(h) is not cut out. In this case, the area indicated by the dashed line A in Figure 12(b) is hollow on the inside.If this cavity has a side surface perpendicular to the substrate surface, it will also be perpendicular when superimposed. However, since this region A is larger than the coil region B in the axial direction, it will disappear, so it does not necessarily have to be perpendicular.

[0092] Alternatively, a coil fabrication substrate 115, shown in Figure 12(h), which does not have a cutout for the coil insertion area A, may be attached to the substrate shown in Figure 12(a). In other words, all coil fabrication substrates 130-2 to 130-6 are flat and do not have a cutout for the coil insertion area A. In that case, as shown in Figure 12(c), the photosensitive film 131 is patterned to create a window for the coil insertion area A, and the coil fabrication substrate 115 in that area is etched to form a recess (opening) 134 which is the coil insertion area A. In Figure 12(c), the etched recess (opening) 134 which is the coil insertion area A extends to the coil fabrication substrate 130-3, but the coil fabrication substrate 130-2 may also be etched. When the etching reaches the area of ​​the coil fabrication substrate 130-1, the coil wiring 116 will be exposed, which is undesirable (to avoid etching or damaging the coil wiring 116), so the etching is stopped before the coil wiring 116 is exposed. After this, the photosensitive film pattern 131 is removed.

[0093] Next, put an adhesive (coating liquid) into this recess 134, or attach the adhesive to the core member 133 shown in Fig. 12(d), and insert the core member 133 into the recess 134. The core member 133 is previously attached to the support substrate 132 with an adhesive or the like. For example, after attaching a core member sheet, film, or thin plate serving as the core member to the support member 133, a predetermined pattern may be formed by photolithography + etching, or it may be manufactured by punching with a mold. Alternatively, the core member sheet or the like may be diced to pick up and remove unnecessary portions. In that case, if the adhesive is separated between the portion to be removed and the portion to be adhered as it is, it is also possible to easily remove only the unnecessary portion using different peeling methods. (For example, use adhesives with different softening temperatures.) A non-magnetic insulating adhesive can be used as the adhesive, but a paste-like or liquid adhesive containing ferromagnetic particles such as ferrite particles may also be used. Since these ferromagnetic particles also serve as a kind of core, the effect of the core can be enhanced.

[0094] Insert the core member 133 attached to the support substrate 132 into the recess (opening) 134, which is the coil insertion region A. At this time, if a convex portion 135 is provided on the support substrate 132, the upper part of the core member 133 does not protrude outside the upper surface of the uppermost coil manufacturing substrate 130-6, that is, the entire core member 133 can be placed inside the recess (opening) 134. (The sum of the height h1 of the core member 133 and the thickness h2 of the adhesive should be smaller than the depth h3 of the recess 134 (that is, h1 + h2 < h3. When the height of the convex portion 135 is h4, if designed such that h1 + h2 + h4 > h3, the support substrate 132 will not hit the upper surface of the coil manufacturing substrate 130-6, and the core member 133 can be smoothly inserted into the recess (opening) 134.) If the adhesive to be placed in the recess is, for example, a thermosetting adhesive (curing temperature T1), and the adhesive between the core member 133 and the support member 132 is a thermoplastic adhesive (softening temperature T2), by using an adhesive such that T1 < T2, first fix the core member 133 inside the recess 134 between T1 and T2, and then separate the core member 133 from the support member 132 at a temperature of T2 or higher.

[0095] After inserting the core member 133 into the recess 134, if foreign matter such as adhesive does not adhere to the surface of the uppermost coil manufacturing substrate 130-6, the process shown in Figure 12(f), i.e., the next coil manufacturing substrate 130-7 can be attached to the coil manufacturing substrate 130-6. If foreign matter such as adhesive adheres to the surface of the uppermost coil manufacturing substrate 130-6, or if the core member 133 is to be completely embedded in the recess, after placing and fixing the core member 133 in the recess 134, the same adhesive is placed in the recess 134 from above the core member 133 to fill the gap space of the recess 134 with adhesive. Alternatively, an insulating film may be laminated or applied. At this time, adhesive or insulating film will also adhere to or be laminated on the surface of the uppermost coil manufacturing substrate 130-6, so the adhered or laminated adhesive or insulating film is removed by CMP, BG (grinder), or etch-back, and the surface is flattened to expose the coil wiring pattern 116. This planarization process involves, for example, applying an organic film such as a resist solution and planarizing it, then polishing it with CMP, BG (grinder), or etching it using the etch-back method to expose the surface of the coil fabrication substrate 130-6 while planarizing it. (Figure 12(e))

[0096] Next, coil manufacturing substrate 130-7, which is coil manufacturing substrate 115 in which the coil insertion area A shown in Figure 12(h) is not cut out, is attached to coil manufacturing substrate 130-6 (which has been slightly etched or polished). Then, coil manufacturing substrate 130-8, which is coil manufacturing substrate 130-5 having the coil wiring pattern shown in Figure 12(j), the uppermost coil manufacturing substrate, is attached to coil manufacturing substrate 130-7. In this way, a coil with a core member 133 can be manufactured. The required number of coils with core members 133 are manufactured in the required locations on the support substrate 114-1. After this, the coils with core members 133 are inserted into the coil insertion cavity 120 in the process shown in Figure 11(j) and later. Coils with core members 133 can be placed all at once simultaneously in parts that require a large number of accelerators or electromagnets. Furthermore, by interposing an insulating film on the coil manufacturing substrate 130-1, which is the coil manufacturing substrate 115 having the coil wiring pattern shown in Figure 12(g), it is possible to attach the coil manufacturing substrate 130-3, which is the coil manufacturing substrate 115 with the coil insertion area A cut out as shown in Figure 12(i), without attaching the coil manufacturing substrate 130-2, which is the coil manufacturing substrate 115 without the coil insertion area A cut out as shown in Figure 12(h). (Since the coil wiring pattern and the core member 133 are not electrically conductive) Similarly, if an insulating film is interposed on the upper surface of the core member 133, it is possible to attach the coil manufacturing substrate 130-8, which is the coil manufacturing substrate 115 having the coil wiring pattern shown in Figure 12(j), without attaching the coil manufacturing substrate 130-7, which is the coil manufacturing substrate 115 without the coil insertion area A cut out as shown in Figure 12(h), to the coil manufacturing substrate 130-6. This intervening insulating film can be realized by lamination of insulating adhesives, insulating sheets, or insulating films (CVD, PVD, coating methods, etc.). As a result, the layer shown in Figure 12(h) becomes unnecessary.Examples of soft magnetic materials used as core components include iron (μ=approx. 5000), pure iron (μ=approx. 10000), silicon-iron (μ=approx. 7000), permalloy (μ=approx. 100000), supermalloy (μ=approx. 1000000), amorphous iron (μ=approx. 3000), ferrite (μ=approx. 2000), Sendust (μ=approx. 30000), and vermendur (μ=approx. 5000).

[0097] Next, a method for manufacturing the coils to be placed on the upper and lower substrates will be described. Figure 13 shows a diagram illustrating the method for manufacturing the coils to be placed on the upper and lower substrates. The first layer of coil wiring substrate 142-1 is attached to the support substrate 141-1. This coil wiring substrate 142-1 is a substrate without coil wiring, for example, one without the conductive film wiring pattern 144 in Figure 13(i). If this coil wiring substrate 142-1 is a semiconductor substrate such as Si or a conductive substrate, an insulating film is formed on the substrate surface to prevent connection between the wiring and the coil wiring substrate 142-1. If the coil wiring substrate 142-1 is an insulator such as glass, quartz, sapphire, alumina, plastic, or polymer resin, it is usually not necessary to form an insulating film, but an insulating film may be necessary to improve adhesion with the conductive film. The first layer of coil wiring substrate 142-1 protects the wiring pattern of the wiring substrate attached on top of it, but since an insulating film can also be formed on the underside of the second layer of coil wiring for protection, this first layer of coil wiring substrate 142-1 does not necessarily need to be provided. However, to make the coil more robust, it is better to include this first layer of coil wiring board 142-1.

[0098] Next, the second layer of coil wiring board 142-2 is attached. Since there is no pattern on the first layer, pattern alignment is not necessary. The second layer of coil wiring board 142-2 is a wiring board having the wiring pattern shown in Figure 13(i). As already described, this attachment method involves attaching the second layer of coil wiring board 142-2 to another support substrate 141-2 (not shown), attaching the coil wiring board 142-1 attached to support substrate 141-1 and the coil wiring board 142-2 attached to support substrate 141-2 facing each other, and then separating the support substrate 141-2 from the coil wiring board 142-2. Alternatively, if the coil wiring board 142 can be supported by itself, the coil wiring board 142-1 and the support substrate 141-2 can be attached directly while aligning them. Alternatively, a coil wiring board 143 without a wiring pattern is attached to a support substrate 141-2, the coil wiring board 143 without a wiring pattern is patterned, a photosensitive film pattern with the wiring pattern as an opening is formed by photolithography, the coil wiring board 143 is etched to form a through-groove pattern. A vertical shape is desirable for this through-groove pattern. Alternatively, the coil wiring board 143 without a wiring pattern can be punched out with a mold that has a wiring pattern to form a through-groove pattern. Alternatively, a photosensitive resin is applied to the support substrate 141 to create a through-groove pattern, and the areas other than the openings are cured to form a through-groove pattern. Alternatively, an insulating film paste is applied, a through-groove pattern is created with a mold, and the paste is cured to form a through-groove pattern. Alternatively, a paste is applied by screen printing to create a through-groove pattern, and then the paste is cured to form a through-groove pattern.

[0099] In this way, an insulating film is formed on the coil wiring board 143 with through grooves, if necessary, and then a conductive film is formed to fill the through groove pattern with the conductive film. After filling the through grooves with a thick conductive film using CVD, PVD, or plating, the surface is etched (etch-back method) or polished (BG method or CMP method) to remove the conductive film on the surface and fill only the through grooves with the conductive film. Alternatively, a thin conductive film (seed layer) is laminated on the inner wall of the through grooves and the surface of the coil wiring board 143 using CVD or PVD, then a photosensitive film is applied or a photosensitive sheet is attached and the parts excluding the through groove pattern are covered with the photosensitive film using photolithography, the through groove pattern is then filled with a plating film using a plating method, and then the conductive film laminated on the surface of the coil wiring board 143 is removed using the etch-back method or polishing method to produce a coil wiring board 143 with a pattern in which only the through groove pattern is filled with the conductive film (for example, as shown in Figures 13(i) to (k)). Alternatively, conductive paste can be applied to fill the through-groove pattern, the paste in the areas not covered by the through-groove pattern can be removed, and the conductive paste in the through-groove can be hardened by heat treatment or the like. Alternatively, molten metal can be poured into the through-groove pattern, cooled and hardened to fill the through-groove with metal (conductor). The coil wiring pattern 144-2 of the second layer coil wiring board 142-2 is the first of the spiral patterns shown in Figure 13(i). It is formed as a rectangular pattern, but it can also be a circular pattern or an elliptical pattern. Next, if the coil wiring board 142-2 is attached to the support board 141-2, the support board 141-2 is separated from the coil wiring board 142-2. (Figure 13(a)) Note that the wiring pattern 144 extending to the right in Figure 13(i) is a pattern for creating coil terminals at the top, but this is only shown for clarity in the drawing, and this pattern can also be extended to the left side of the drawing.

[0100] Next, the third coil wiring board 142-3 is attached to the second coil wiring board 142-2. The wiring pattern of the third coil wiring board 142-3 is a contact pattern (144-1) that connects upper and lower annular wiring patterns as shown in Figure 13(j). The wiring pattern 144-2 on the right is a contact wiring for providing the terminal electrodes of the coil at the top. The coil wiring board 142-3 is attached to the support board 141-3, and then the third coil wiring board 142-3 is attached to the second coil wiring board 142-2 (Figure 13(b)). Figure 13(c) shows the support board 141-3 separated. With this type of upper and lower contact wiring, no current flows in the lateral direction, but the current flows in the vertical direction, so the thickness of the coil wiring board 143 can be thin. Therefore, an insulating film is directly formed on the second layer coil wiring substrate 142-2 using CVD, PVD, or coating methods (SOG, paste), and if necessary, appropriate heat treatment is performed. Then, contact holes are made using photolithography, and conductive films are laminated using CVD, PVD, plating, or coating methods (paste). The contact holes are filled with the conductive film (filling is not always necessary depending on the current flowing through the coil), and conductive film patterns around the contact holes and contact conductive film patterns with the upper layer wiring are formed using photolithography and etching methods. With this manufacturing method, the thickness between coil wirings, i.e., the depth of the contact holes, can be made to about 1 μm to 10 μm. (This figure is also Figure 13(c).)

[0101] The contact hole size (for a rectangular shape, a μm vertically and b μm horizontally) is selected based on the current flowing through the coil. (Of course, the width d and thickness h of the upper and lower coil wirings are also considered.) The current flowing through the coil determines the magnetic field generated by the coil. For example, if the contact holes (144-1 and 144-2 in Figure 13(j)) and coil wiring 144 are formed by the plating method, considering electromigration and stress migration, a current density of about 106 A / cm2 can be achieved, so with a=b=30 μm, or d=30 μm, h=30 μm, a current of about 10 A can be passed through. Assuming the coil size is a rectangle with x=1 mm and y=1 mm, and the coil has 100 turns, the central magnetic field at the end face of the coil generated at this time is quite large. If the contact depth is 2 μm, the pitch per turn is 32 μm, and 100 turns result in a coil length of 3200 μm = 3.2 mm. If the contact depth is 20 μm, the pitch per turn will be 50 μm, and 100 turns will result in a coil length of 5000 μm = 5.0 mm. Furthermore, a coil wiring board with an annular coil wiring pattern can be manufactured using a lamination method instead of an adhesion method. The method is the same as the method for forming the contact wiring pattern described above.

[0102] Next, a coil wiring board 142-4, which is a coil wiring board 143 having a ring-shaped coil wiring pattern 144 as shown in Figure 13(k), is attached to a coil wiring board having a contact hole pattern, or to an insulating layer 142-3 having a contact hole pattern. The coil wiring board 142-4 is also attached to a support substrate 141-4 (not shown) and then attached to the coil wiring board 142-3, after which the support substrate 141-4 is separated. If the coil wiring board 142-4 can be processed independently, it can also be attached directly to the coil wiring board 142-3. Next, a coil wiring board 142-5, which is a coil wiring board 143 having a contact pattern as shown in Figure 13(j), is attached to the support substrate 141-5 and then attached to the coil wiring board 142-4. As described above, it is also possible to form the contacts 144-5-1 without using the coil wiring board 142-5. Furthermore, contacts 144-3-2, 144-4-2, and 144-5-2, which connect the lower coil terminals to the upper electrodes, are stacked and connected in sequence. (Figure 13(d))

[0103] By repeating these steps, an annular coil wiring pattern as shown in Figure 13(k) and a contact pattern as shown in Figure 13(i) are alternately attached or stacked to form a coil with a predetermined number of turns. In Figure 13(e), the coil wiring substrate with the annular coil wiring pattern has four layers: 142-2, 4, 6, and 8, and the coil wiring substrate with the contact wiring pattern has four layers: 142-3, 5, 7, and 9. For simplicity, the number of turns in the coil wiring is kept small, but it is possible to stack them in increasing numbers. Alternatively, stacks of several layers can be stacked on top of each other. When inserting a core into the coil, a photosensitive film pattern 145 is then formed to cut out the portion where the coil should be inserted, i.e., the inner portion of the annularly formed coil wiring 144, the inner portion of the portion indicated by the dashed line 147 in Figure 13(e) (the inner portion of the portion indicated by the dashed line 147 in the coil wiring patterns Figures 13(i) to (k)). Since a considerable thickness is etched, a film or thin plate for etching stopper may be interposed. Using this photosensitive film pattern 145 as a mask, etching is performed from the opening 146 to remove the coil wiring substrate inside the coil wiring. The inner coil wiring substrate of the coil wiring substrate 142-2 with the lowest layer of wiring patterns is completely removed, and then the coil wiring substrate 142-1 below it, which does not have a wiring pattern, is etched away up to a certain point (or all of it). As a result, a coil insertion hole 148 (with sides 147) is formed. This etching process etches a considerable amount of the coil substrate, so it is necessary to set a fairly large etching selectivity ratio between the photosensitive film pattern 145 (and the etching stopper, if one is used) and the coil substrate. Alternatively, the photosensitive film 145 needs to be made considerably thicker. Therefore, it is advisable to cut out the portion 148 that will become the coil insertion hole in advance when each coil wiring substrate is manufactured. For example, as shown in Figures 13(i) to (k), the inner portion 148 of the area indicated by the dashed line 147 should also be removed. This removal method can be performed simultaneously with the formation of the wiring groove (through-hole) when forming the wiring pattern 144, so it does not increase the process or cost.When forming the wiring pattern 144, the conductive film formed in the cut-out portion 148 can be removed at the same time, or masked to prevent the formation of the conductive film. This also does not increase the process. As a result, when a predetermined number of coil wiring boards are stacked, the coil insertion holes 148 are formed simultaneously, eliminating the need for processes such as attaching the photosensitive film pattern 145 or etching stopper.

[0104] Next, as shown in Figure 13(f), the core 151 attached to the support substrate 149 is inserted into the coil insertion hole 148. To prevent the support substrate 149 from colliding with the uppermost coil wiring board 142-9, a protrusion 150 may be provided, and the core 151 may be attached to this protrusion 150 before inserting the core 151 into the coil insertion hole 148. This allows the core 151 to be completely inserted into the coil insertion hole 148. Adhesive may be put into the coil insertion hole 148 using a dispenser or by application before inserting the core 151 into the coil insertion hole 148, or adhesive may be applied to the bottom or sides of the core 151 before inserting the core. If the adhesive is in paste, liquid, or gel form, it can also act as a buffer, thus reducing the damage to the coil wiring board 142. Alternatively, an adhesive sheet may be attached to the core 151, and the adhesive sheet may also act as a buffer by providing cushioning properties. As mentioned above, the core's effectiveness can be further enhanced by using a paste containing powdered soft magnetic material, or a liquid or gel-like material, as an adhesive. Even without using the core 151, the coil's magnetic flux density can be increased to some extent by filling the coil insertion hole with a paste containing powdered soft magnetic material, or a liquid or gel-like material. Furthermore, by injecting a paste containing powdered soft magnetic material, or a liquid or gel-like material, to the extent that it fills the coil insertion hole 148, or by injecting the material to the extent that it fills the coil insertion hole 148 when the core 151 is inserted, the core 151 is covered with these materials, eliminating the need to use adhesive or other materials to fill the coil insertion hole 148 afterward. When the core 151 is inserted and the coil insertion hole 148 is covered with adhesive, the wiring layer exposed on the top surface of the uppermost coil wiring board 142-9 may also be covered with adhesive. Therefore, the adhesive adhering to the top surface of the uppermost coil wiring board 142-9 should be removed by polishing (BG method, CMP method, etc.) or etching. It is also desirable to flatten the top surface of the uppermost coil wiring board 142-9.

[0105] Next, as shown in Figure 13(g), a photosensitive film patterning 152 is performed to determine the outer shape of the coil. Using this photosensitive film pattern 152 as a mask, the coil wiring board 142 is etched, removing unnecessary parts down to the bottom layer of coil wiring board 142-1. Since this coil wiring board 142 is also thick, it can be stacked with the coil outer shape determined. The outer shape of each coil wiring board 142 (142-1, 2, ...) may be determined from the outset by using a substrate with a predetermined outer shape (for example, a substrate 143 having only the outer shape shown in Figures 13(i) to (k)) with through-holes for wiring and patterns for filling the through-holes with conductive film. Alternatively, a large number of coil wiring boards 142 (142-1, 2, ...) with the outer shape portion and patterns for through-holes for wiring and conductive film fillings in the through-holes can be formed (or even just one can be made), and these can be stacked. In this way, as shown in Figure 13(h), the coil 140 attached to the support substrate 141-1 is formed.

[0106] Next, the fourth substrate 153 is attached to the upper surface of the coil 140 (in Figure 13(g), the coil wiring substrate 142-9). (Figure 13(l)) The fourth substrate 153 is an insulating substrate such as a glass substrate, quartz substrate, sapphire substrate, alumina substrate, AlN substrate, ceramic substrate, various polymer substrates such as epoxy and polymid, or a plastic substrate. In the case of a conductive substrate or a semiconductor substrate such as a Si substrate, it is necessary to cover the surface and contact hole portions with an insulating film. After attaching the fourth substrate, contact holes and conductive film wiring 154 within them are formed on the fourth substrate 153 for the conductive film wiring patterns 144-9-1 and 144-9-2 of the uppermost coil wiring substrate 142-9, and then electrode / wiring patterns 155-1 and 155-2 that connect to at least the contacts 154 are fabricated. The conductive film wiring pattern 144-9-2 is a wiring that connects to the coil wiring terminal of the bottommost coil wiring board 142-2, and the electrode wiring pattern 155-2 is connected to it. The other coil wiring terminal is the coil wiring terminal 144-9-1 of the topmost coil wiring board 142-9, and the electrode wiring pattern 155-1 is connected to it. Therefore, a current can be passed through the coil 140 between the conductive film wiring patterns 144-9-1 and 144-9-2 to generate a magnetic field. If the fourth substrate 153 is an insulating substrate (or a conductive film substrate or semiconductor substrate covered with an insulating film on its surface), the coil wiring board 142-9, which only has a contact wiring pattern, can be omitted, and the coil wiring board 142-8, which has an annular coil wiring pattern, can be directly attached. In that case, an insulating adhesive is used. The fourth substrate 153, on which the contacts 154 and conductive film / wiring electrodes 155 have been formed in advance, can be attached to the coil 140. However, conductive adhesive is used to connect the conductive film wiring patterns 144-9-1 and 144-9-2 to the contacts 154, while insulating adhesive is used for the other parts. Alternatively, the conductive film wiring patterns 144-9-1 and 144-9-2 to the contacts 154, as well as the other parts, can be joined by direct bonding (at room temperature, high temperature, fusion bonding, etc.).

[0107] Next, the support substrate 141-1 is separated. As a result, the coil 140 attached to the fourth substrate 153 can be fabricated. The coil 140 has a core 151 inside the coil wiring. If a core is not used, it is not necessary to form the coil insertion hole 148, so the process becomes simpler. Furthermore, by using the fourth substrate as the support substrate 141-1, a similar coil 140 can be fabricated, eliminating the need to separate the final support substrate 141-1 and eliminating the need to use the initial coil wiring substrate 142-1 which does not have a wiring pattern. However, since this fourth substrate 153 will be used as a product, it is necessary to design the materials and process considering reliability such as durability. Also, at this time, contact holes, electrodes, and wiring are formed on the fourth substrate 153, which is also the support substrate.

[0108] The coil 140 attached to the fourth substrate 153 is then attached to the second substrate (upper substrate) 202 and the third substrate (lower substrate) 203, which are attached to the upper and lower parts of the cavity 204-2 through which the charged particles pass, as shown in Figure 11. Figure 14 shows this state. In other words, Figure 14 is a quadrupole electromagnet made using the coil (electromagnet) of the present invention. Coils 118-1 and 118-2 are placed in cavities (coil insertion cavities) 120-1 and 120-2 provided on the left and right (Y direction) of the charged particle passage cavity 204-2, respectively, with the second substrate (upper substrate) 202 attached to the upper part and the third substrate (lower substrate) 203 attached to the lower part. The lower surface of the coil 140 (140-1) attached to the fourth substrate 153 (153-1) is attached to the second substrate (upper substrate) 202 located above the charged particle passage cavity 204-2 in such an accelerator. Adhesive or adhesive sheet is applied to the attachment surface of the second substrate (upper substrate) 202 to attach the coil 140 (140-1). Alternatively, adhesive or adhesive sheet is applied to the lower surface of the coil 140 (140-1) to attach the coil 140 (140-1). A recess may be created in the portion of the second substrate (upper substrate) 202 where the coil 140 (140-1) is placed, the second substrate (upper substrate) 202 in that portion may be thinned, and the coil 140 (140-1) may be inserted into the recess. Since the thickness of the second substrate (upper substrate) 202 on the charged particle passage cavity 204-2 is reduced, the end face of the coil 140 (140-1) gets closer to the charged particle passage cavity 204-2, which can increase the strength of the magnetic field in the charged particle passage cavity 204-2. The second substrate (upper substrate) 202 weakens or disturbs the magnetic field, so a part of the second substrate (upper substrate) on the charged particle passage cavity 204-2 (the opening 159-1 shown by the dotted line) may be removed. In that case, to prevent the pressure in the charged particle passage cavity 204-2 from rising, the coil 140-1 is sealed with an adhesive or the like so that it completely closes the opening 159-1. If a semiconductor substrate such as a conductive film (conductive thin plate) or a Si film (Si substrate) is bonded to the sealing portion of the lower end face of the coil 140-1, it can be firmly attached by anodic electrostatic coupling if the second substrate (upper substrate) is a glass substrate or the like. Alternatively, if these films, layers, or substrates are used on the coil wiring board 142-1, they can be similarly firmly attached by anodic electrostatic coupling.

[0109] Alternatively, as shown in Figure 14, if the support column 156-1 is attached to the second substrate (upper substrate), and the fourth substrate 153-1 is attached to the support column 156-1 to form a cavity 157-1, in which the coil 140-1 is placed, and an opening 158-1 is provided in the fourth substrate 153-1 to allow for vacuuming, the pressure rise in the charged particle passage cavity 204-2 can be prevented. In this case, if the distance between the second substrate (upper substrate) 202 and the end face of the coil 140-1 is made almost zero when the fourth substrate 153-1 is attached to the support column 156-1, simultaneous attachment is possible, and even if the end faces of the second substrate (upper substrate) 202 and the coil 140-1 are not attached, the distance between the charged particle passage cavity 204-2 and the end face of the coil 140-1 is also fixed. If the support column 156-1 is formed using the coil wiring substrate 142, there is no increase in process steps. Alternatively, a cavity 157-1 can be created in a substrate with a thickness equal to or slightly longer than the length of the coil 140-1 (this can be an insulating substrate, a conductive substrate, a semiconductor substrate such as a Si substrate), and attached to the second substrate (upper substrate) 202 or the fourth substrate 153-1. When the coil 140-1 is positioned, it can then be attached to the second substrate (upper substrate) 202 or the fourth substrate 153-1. If the second substrate (upper substrate) 202 or the fourth substrate 153-1 is a glass substrate or the like, and the support column 156-1 is a conductive substrate or a semiconductor substrate such as a Si substrate, it can also be firmly bonded by electrostatic anode coupling. Although the direction perpendicular to the paper (direction of charged particle propagation) is not shown, the support column 156-1 can surround the charged particle passage cavity 204-2 more widely than the passage cavity 204-2, so the upper part of the charged particle passage cavity 204-2 can be completely contained within the cavity 157-1. Therefore, since the outside of the charged particle passage cavity 204-2 is also surrounded by the pressure-controlled cavity 157-1, the pressure inside the charged particle passage cavity 204-2 can also be controlled to a lower pressure. Although the electrodes of coil 118 (118-1, 2) are located inside cavity 157-1, they can be routed as wiring and extended to the outside of the cavity.

[0110] The coil 140-2 can be arranged in exactly the same way on the underside of the charged particle passage cavity 204-2. The formation of the support column 156-2, the opening 159-2 in the third substrate (lower substrate) 203 facing the coil end face, the formation of the recess, the formation of the cavity 157-2, and the formation of the opening 158-2 for vacuuming can also be done in the same way. In addition, multiple coils 118 (118-1, 2) and coils 140 (140-1, 2) can be arranged perpendicular to the plane of the paper, that is, along the charged particle passage cavity 204-2, and multiple quadrupole magnet spaces can be easily created simultaneously. This quadrupole electromagnet can control the convergence and divergence of charged particles passing through the charged particle passage cavity 204-2.

[0111] In Figure 4, a substrate coil is shown, but ordinary electromagnets can also be used. For example, quadrupole magnets can be placed in the areas where various electromagnets are used to focus charged particles (for example, in Figure 1, areas 15, 17, 19, 21, 22, 23, 26, 28, 29, 31, 32, 35, 36, etc.). In the vertical direction, one pole of the electromagnet can be easily placed, by making contact with or approaching the upper and lower substrates. The closer it is to the upper and lower substrates, the closer it is to the charged particle trajectory (near the center of the penetration chamber), so that charged particles can be focused even with a smaller magnetic field. On the lateral side, electromagnets cannot be placed as they are, so in the area where charged particles are focused, the outer region (both sides) of the area where charged particles are focused is cut approximately parallel to the charged particle trajectory to create an opening region (both sides) in the substrate, and electromagnets are placed in this opening region so that a magnetic field is applied perpendicular to the charged particle trajectory. Since the space is limited in this region, small electromagnets that generate a strong magnetic field are desirable. If the desired magnetic field strength can be obtained while considering the container space, superconducting magnets can also be used. Because the accelerator of this invention is small in size, even if the entire area where the electromagnets are placed is housed in a container that maintains a temperature capable of sustaining superconductivity, the container size will not be excessively large. Laser dicing or high-pressure water dicing can be used as methods for creating openings in the substrate. Desired areas within the substrate can be precisely opened. Electromagnets placed on the sides can also be brought into contact with or close to the substrate. The closer they are to the substrate, the closer they get to the charged particle trajectory (near the center of the penetration chamber), allowing charged particles to be focused even with a smaller magnetic field.

[0112] In a synchrotron, accelerating charged particles in the cavities between the deflection magnets 25, 30, 34, and 37 can generate even faster charged particles. For example, the accelerating electrodes used in the mass spectrometer, which will be described later, can be used. That is, many accelerating electrodes (which can also be used for focusing and deceleration) are fabricated parallel to each other in the through chamber, with conductive film electrodes stacked on substrate sidewall plates having a central hole. If a gradually increasing voltage is applied to the numerous accelerating electrodes arranged in the direction of the charged particle's propagation, the charged particle passing through the central hole of the accelerating electrode will be accelerated. For example, if 100 substrate sidewall plates are arranged at a pitch of 1 mm, the length is 100 mm, and if the voltage is divided among them and 100 V is applied in total, then 1 / 2mv² = qV (m: mass of charged particle, v: velocity, q: charge, V: applied voltage), so m = 10 -25 With kg and q=e, v=14km / sec. Accelerating at four points results in 56km / sec. After 1000 laps, the speed becomes 56000km / sec, which is 1 / 5 the speed of light. Alternatively, charged particles can be accelerated by applying a high-frequency voltage to multiple accelerating electrodes, and the velocity can be increased by increasing the frequency. Since multiple circular synchrotron orbits can be arranged (see Figure 16), the velocity of charged particles can be increased smoothly by gradually increasing the frequency of the high-frequency voltage in each orbit. In the case of a linear accelerator, it is easy to place electromagnets from the side (left-right direction) by simply cutting the substrate on the side of the through-chamber.

[0113] Figure 5 shows an accelerator device formed by connecting multiple charged particle accelerators of the present invention. Many accelerators 200 (200-1, 2, 3, ...) shown in Figure 4 are connected, and high-frequency signals are input from a high-frequency generator 225 through a high-frequency introduction tube (waveguide) 223 to each accelerator. The accelerator 200 creates an accelerating electric field, accelerating the speed of charged particles incident on accelerator 200 (200-1) from the charged particle generator 221, and finally ejecting charged particles 227 at high speed from the final stage accelerator 200 (200-3). The high-frequency signals that have passed through the accelerator 200 exit through a high-frequency output tube 224. The frequency, power, and timing (pulses, etc.) of each high-frequency generator 200 and charged particle generator 221 are controlled by a control device 226. The accelerator devices of the present invention can be manufactured with freely adjustable sizes, allowing for selection according to application. For example, if the cavity depth (h1, i.e., the thickness of the main substrate) is 1 mm, the width of the accelerator can be made to about 3 mm, so 100 accelerators with a length of 300 mm can be made from a 300 mm x 300 mm wafer (rectangular in this case). Therefore, an accelerator with a length of 30 m can be made from a single wafer. With such a small width of accelerator, the entire thing can be covered with a vacuum (ultra-low pressure) box, and if the inside of the accelerator is also vacuumed, an even ultra-low pressure cavity can be realized. In addition, the entire thing can be immersed in liquid helium or liquid nitrogen, so heat generation due to high-frequency application can be suppressed, and superconductors can be used for focusing electromagnets, so the magnetic field of the electromagnets can be increased.

[0114] Figure 6 shows an example of a method for manufacturing the charged particle accelerator of the present invention. The charged particle accelerator of the present invention uses through holes formed in the main substrate 201 as acceleration cavities for charged particles. The main substrate 201 is attached to the lower substrate 203. The main substrate 201 can be made of various materials such as conductive substrates, insulating substrates, and semiconductor substrates. As conductive substrates, metal substrates such as copper and aluminum, semiconductor substrates doped with a high concentration of carriers (for example, low-resistance semiconductor substrates), conductive plastics, conductive ceramics, and conductive carbon substrates can be used. However, ferromagnetic and paramagnetic materials should not be used as they affect the magnetic field generated by the introduction of high frequencies. Therefore, stainless steel, which is a non-magnetic material such as austenitic stainless steel, can be used. As insulating substrates, glass substrates, quartz substrates, sapphire substrates, alumina substrates, AlN substrates, plastic substrates, ceramic substrates, etc. can be used. As semiconductor substrates, silicon substrates, SiC substrates, carbon substrates, compound semiconductor substrates, etc. can be used. Unless otherwise specified in this specification, the main substrate will be described as a silicon substrate, which is a semiconductor substrate.

[0115] The lower substrate 203 can also be made of various materials such as conductive substrates, insulating substrates, and semiconductor substrates, and the specific materials are the same as those for the main substrate 201. Unless otherwise specified in this specification, the lower substrate will be described as an insulating substrate, which is a glass substrate. Methods for attaching the main substrate 201 and the lower substrate 203 include bonding using an adhesive, fusion bonding by melting the attachment surface, room temperature bonding, high temperature bonding, and diffusion bonding. In the case of a semiconductor substrate such as a silicon substrate or a conductive substrate and a glass substrate, electrostatic bonding (anodic bonding) can also be used. An insulating film or metal film can also be formed on the lower surface of the main substrate 201 by CVD (chemical vapor deposition) or PVD (physical growth) before being attached to the lower substrate 203. Next, as shown in Figure 6(a), a photosensitive film 233 such as a photoresist is formed on the upper surface of the main substrate 201 by coating or sheet attachment, and a photosensitive film pattern 233 is formed by opening a window using photolithography. This photosensitive film pattern 233 is for forming through holes (which can also be thought of as through chambers) in the main substrate 201. An insulating film or metal film may be formed between the main substrate 201 and the photosensitive film. These insulating films or metal films serve as protective films for the main substrate 201, and also act as etching stoppers in case the photosensitive film 233 is completely etched during the etching of the main substrate 201.

[0116] Next, the main substrate 201 in the windowed area is etched using the patterned photosensitive film 233 as a mask. If the main substrate 201 is silicon, CF-based, SF-based, CCl-based, SiCl-based, Cl-based, Br-based, etc. can be used as etching gases, and it is desirable that the through-holes (cavities) be as perpendicular as possible to the surface of the main substrate, and that the etching be in a shape faithful to the photosensitive film pattern 233 (shown by the dotted line 234 in Figure 6(a)). Examples of such perpendicular etching methods include RIE (reactive ion etching), Bosch, and cryo-etching.

[0117] When the lower substrate 203 is a glass substrate, the etching selectivity ratio can be increased in the etching gas and etching method described above. Therefore, even if the silicon main substrate 201 is over-etched in the thickness direction to etch the entire surface of the main substrate 201 uniformly, the amount of etching on the lower substrate 203 is small. For example, if the thickness of the main substrate 201 is 500 μm and the etching selectivity ratio is 50, even with 25% over-etching (this level of over-etching is sufficient to completely form through holes across the entire main substrate 201), the etching of the lower substrate 203 is at most 5 μm. Therefore, a thickness of 10 μm for the lower substrate is sufficient, but it is desirable to make it 100 μm or more to maintain a certain level of strength. Later, another substrate may be attached to the lower substrate 203 for reinforcement. Another method is to attach a thick lower substrate 203 (for example, 300 μm or more) and then thin it to a thickness of 100 μm or less by polishing (CMP method or BG method) or etch-back method.

[0118] Figure 6(b) is a cross-sectional view after etching the main substrate 201 to form through holes and removing the photosensitive film 233. This cross-section is a view of the cavity in the longitudinal direction (left to right) and corresponds to Figure 5(a), where substrate side walls 201S-(A), 201S-(1), 201S-(i){i=1, 2, ...}, 201S-(B), etc., and cavities (which can also be called through holes, through grooves, or through chambers) 204C-(A), 204C-(i), 204C-(B), etc. are formed. The parentheses ( ) here indicate that half of the cavity or substrate side wall has been formed, as will be explained later. Therefore, the substrate thickness of the main substrate 201 is h² / 2 here. In Figure 6(a), the main substrate 201 (201H) is denoted with H to indicate half. The substrate sidewall 201S is formed as a main substrate sidewall that is nearly perpendicular to the front or back surface of the main substrate 201. However, even if it cannot be formed nearly perpendicularly, the desired characteristics as an accelerator can be obtained by keeping the angle within 90 degrees ± 10 degrees. Even if it exceeds this angle, the velocity and direction of the charged particles can be controlled by adjusting the high-frequency input voltage, the conditions of the charged particle generator, the input voltage of the focusing electromagnet, etc.

[0119] Figures 6(c) and (d) show the substrate sidewall 201S viewed from a direction perpendicular to the longitudinal direction of the cavity 204 (the direction of movement of charged particles, left-right direction in Figures 6(a) and 6(b)). In other words, these figures show the method for forming the central hole 205. After forming the substrate sidewall 201S shown in Figure 6(b), a photosensitive film 235 is formed (formed using a photolithography method for photosensitive sheet attachment or photosensitive film coating), and a window 236 for forming the central hole 205 is opened. Alternatively, an insulating film may be formed on the surface of the main substrate 201 before forming the photosensitive film 235. Using the patterned photosensitive film 235 as a mask, the main substrate 201 is etched from the windowed portion 236 to form the central hole 205. When the shape of the central hole is rectangular, if the vertical length is e1 and the horizontal length is e2, the state after removing the photosensitive film 235 is shown in Figure 6(d), and at this stage, the depth (vertical length) of the central hole is 1 / 2 × e1. In Figures 6(c) and (d), the cavity is not visible, but it exists in front of or behind the substrate sidewall 201 (for example, 201S-(i)){i=1, 2, 3, ...}, and its boundary is indicated by the dotted line 237. As can be easily seen, the formation process of the central hole 205 in Figures 6(c) and (d) can also be performed before forming the substrate sidewall 201S and cavity 204 shown in Figure 6(b), i.e., before Figure 6(a). This has the advantage of making it easier to form the photosensitive film pattern because there are no irregularities such as cavities.

[0120] Next, as shown in Figure 6(e), an insulating film 238 is formed on the main substrate 201 and within the through-holes 204. This insulating film 238 is formed when the main substrate 201 is a semiconductor or conductor and conduction would be problematic due to electrical conductivity with the conductive film 206 that is formed later. Alternatively, it is formed as a film to improve adhesion with the conductive film. Note that if the main substrate 201 is an insulator, it is not necessary as there is no electrical conductivity, but an insulating film can be formed to improve adhesion. The insulating film 238 is formed by CVD, PVD, etc. For example, silicon oxide film (SiOx), silicon nitride film (SiNx), or silicon oxynitride film (SiNxOy). If the main substrate 201 is silicon, it can also be formed by oxidation or nitriding. After this, the conductive film 206 is formed. Since this conductive film 206 is for forming an accelerating electric field by high frequency, it is better if it has high conductivity. Also, a non-magnetic material (including diamagnetic material) that does not affect magnetic field generation is preferable. For example, copper, gold, silver, Ti, Zr, Ta, tungsten, aluminum, carbon (e.g., conductive nanotubes), various silicides, alloys thereof, conductive polySi, and composite films thereof are suitable. These conductive films can be formed by CVD, PVD, or plating methods. Alternatively, an adhesion-enhancing film may be formed to improve adhesion between the conductive film 206, the insulating film 238, the main substrate 201, and the lower (upper) substrates 202 and 203 before forming the conductive film 206. Examples of adhesion-enhancing films include titanium (Ti) and titanium nitride (TiN).

[0121] Since the conductive film in cavities other than the charged particle accelerator section needs to be removed or patterned, a photosensitive film is formed and patterned, and the unnecessary parts of the conductive film 206 are etched. A conductive film 206 is formed inside the cavity (acceleration cavity) 204C-(i) and the high-frequency introduction chamber 204C-(A) and high-frequency exit chamber 204C-(B) within the charged particle accelerator. After patterning the conductive film 206, an insulating film for a protective film can be formed, but it does not need to be formed if a protective film is not required.

[0122] Figure 7 shows the details of the process. Figure 7 is a diagram showing the process from substrate sidewall formation to conductive film patterning, and for simplicity only shows a part of the structure shown in Figure 6. As shown in Figure 7(a), after forming the substrate sidewall 201S (201S-(A), 201S-(1), etc.) and cavities 204 (204C-(A), 204C-(1), etc.), an insulating film 238 is formed, then a conductive film 206 is formed, and then a photosensitive film 241 is formed. The photosensitive film 241 is formed by a coating method or by attaching a photosensitive sheet and softening the sheet. Next, as shown in Figure 7(b), the desired pattern 241 is formed by an exposure method (including development and baking), and the photosensitive film is removed in the areas where the conductive film 206 should be removed, creating a window. The conductive film 206 exposed in this windowed area is etched off by dry etching or wet etching. If a protective film or the like exists on the conductive film 206, the protective film or the like is etched off first, and then the conductive film 206 is etched. After etching the conductive film 206, if an insulating film 238 exists underneath and it also needs to be removed, the insulating film 238 is also etched off by dry etching or wet etching. After that, by removing the photosensitive film 241, the conductive film 206 is formed in the desired area, as shown in Figure 7(c). When connecting the conductive film 206 inside the accelerator, the conductive film 206 on the protruding portion of the substrate side wall 201S can be left. When forming a conductive film in the central hole, it is sufficient to form (leave) a photosensitive film in that central hole area.

[0123] This section describes a method for thickly laminating a conductive film 206 using a plating method in areas where the conductive film 206 is to be retained. The conductive film 206 only needs to serve as a seed for plating, so it only needs to be thinly laminated. For example, if the conductive film 206 is copper, a thickness of about 100 nm is sufficient. After Figure 7(a), a window is created in the area where the conductive film 206 is to be laminated. That is, as shown in Figure 7(d), the photosensitive film 242 is patterned, and a window is created in the acceleration cavity area, etc., where the conductive film 206 is to be laminated. Therefore, the patterning is the reverse of that in Figure 7(b). In this state, the object is immersed in a plating solution (for example, copper sulfate solution for copper plating), and a thick plating film 243 of copper or the like is plated to a predetermined thickness on the exposed conductive film 206 area by applying an electric field. Note that if electroless plating is used, the conductive film 206 that is initially laminated may not be necessary. After removing the photosensitive film 242, the thin conductive film 206 is etched. However, since the conductive film 206 is thinner than the plating film 243 (+206), the entire surface is etched with an etching solution or etching gas for the conductive film 206. This eliminates the need for a new mask (such as a photosensitive film), and allows the conductive films 206 and 243 to be formed only in the desired areas.

[0124] The same structure is formed on the upper substrate 202 using the process shown in Figures 6(a) to (e). The charged particle accelerator of the present invention is (almost) symmetrical vertically and horizontally with respect to the center of the cavity 204. Therefore, as shown in Figure 6(f), the structure shown in Figure 6(e) formed on the lower substrate 203 and the structure shown in Figure 6(e) formed on the upper substrate 202 are attached to the upper surfaces of the main substrate 201. Since the upper substrate 202 and lower substrate 203 are, for example, glass substrates, visible light passes through the cavity portion 204 without the conductive film 206, so the upper substrate (upper substrate 202 and main substrate 201) and the lower substrate (lower substrate 203 and main substrate 201) can be directly aligned, allowing for extremely precise fitting. Since the accelerator of the present invention can be manufactured using an LSI process, the pattern accuracy is 1 μm or less, so if the alignment accuracy is 3 μm, the upper and lower substrates can be attached with an accuracy of 5 μm or less. This accuracy is sufficient for controlling the accelerator.

[0125] The main substrates can be firmly bonded together using room temperature bonding, diffusion bonding, high-temperature bonding, or adhesives. If an insulating film is present in the bonding area 239 and the bond is insufficient, the insulating film in this area can be removed and the main substrates (e.g., silicon) can be bonded together using room temperature bonding, surface activation bonding, high-temperature bonding, or diffusion bonding. Alternatively, a metal film or adhesive can be applied to this area, and the upper and lower substrates can be firmly bonded together using room temperature bonding, or by applying heat and pressure. Furthermore, a thin glass substrate can be sandwiched in this area and firmly bonded to the upper and lower main substrates (e.g., silicon) by electrostatic coupling (anodic bonding). In addition, if a conductive adhesive is used, it is possible to electrically connect the conductive film 206 formed on the upper substrate and the conductive film 206 formed on the lower substrate. Even without using conductive adhesive, it is possible to electrically connect the conductive film 206 using room temperature bonding or by applying appropriate temperature and pressure. Here, S1 is the bonding surface, and the center of the accelerating cavity approximately coincides with S1. Furthermore, the center of the central hole almost coincides with S1.

[0126] Figure 6(g) is a cross-section of the substrate sidewall 201S in Figure 6(f), viewed from a direction perpendicular to the longitudinal direction of the cavity. The upper substrate (upper substrate 202 and main substrate 201) and the lower substrate (lower substrate 203 and main substrate 201) are attached at the bonding surface S2, and the boundary of the cavity is indicated by a dashed line 237. If the upper substrate 202 and the lower substrate 203 are substantially the same substrate, the upper and lower parts are substantially symmetrical with respect to the bonding surface S2. A central hole 205 is formed in the center. If the central hole 205 is rectangular, the vertical dimension is e1 and the horizontal dimension is e2, as can be seen from Figure 6(d). In the central hole 205, an insulating film 239 such as a silicon oxide film may be laminated on the surface of the substrate sidewall 201S, and a conductive film 206 may be formed in addition. In Figure 6(g), the conductive film 206 between the upper substrate and the lower substrate 203 has been removed. This removal is achieved by masking the area where the conductive film 206 is to be retained with a photosensitive film, creating a window in the photosensitive film for the area to be removed, and then etching away the conductive film 206 with an etching solution or etching gas. The insulating film 239 may also be removed at the bonding surface (adhesion surface) S2. In this case, the main substrates 201 are bonded together. Alternatively, a thin glass substrate can be placed between the main substrate 201 (upper, so 201(U)) and the main substrate 201 (lower, so 201(B)) to create a strong bond by electrostatic (anodic) coupling.

[0127] As described above, a charged particle accelerator can be manufactured using a flat substrate (including a main substrate, a lower substrate, and an upper substrate). Conventionally, each disk to be placed inside the accelerator tube was manufactured one by one, and each accelerator cavity was also manufactured and assembled, resulting in a large device, enormous assembly time and cost, and difficulty in improving precision. However, in the case of the present invention, since an LSI process is used or applied, it is possible to manufacture in large quantities, inexpensively, and with high precision (adjustment error is at most 1 to 5 μm or less).

[0128] Figure 8 shows a method for fabricating a charged particle accelerator when a glass substrate 251 is sandwiched between an upper substrate (main substrate 201U, upper substrate 202) and a lower substrate (main substrate 201B, lower substrate 203) and attached by electrostatic coupling. Some parts that overlap with Figures 6 and 7 have been omitted. The silicon substrate 201 (referred to as 201B because it is the lower substrate) and the lower substrate 203, which is a glass substrate or quartz glass substrate, are bonded by anodic bonding. Next, the other side of the silicon substrate 201 is also bonded to the glass substrate or quartz glass substrate 251 by anodic bonding. At this time, it is necessary to apply a positive voltage to the silicon substrate 201, so the positive voltage is applied from the side of the silicon substrate 201, or the area around the lower substrate 203 is etched off by photolithography to expose the silicon substrate 201, and the positive voltage is applied from the exposed part. (Note that anodic bonding is possible even with conductive substrates such as metal plates instead of silicon substrate 201. Also, if a thin metal film such as aluminum is laminated onto silicon substrate 201 before bonding to the glass substrate, lower temperature bonding is possible than anodic bonding without a metal film.) The thickness of the glass substrate 251 should be as thin as possible, preferably 100 μm or less, more preferably 50 μm or less, and even more preferably 20 μm or less. 10 μm or less is also acceptable. One way to make it this thin is to first attach a thick glass substrate and then thin it using polishing methods (CMP, BG, etc.) or etching methods (wet, dry, etc.).

[0129] Next, a pattern for the photosensitive film 233 to form the substrate sidewall 201S is formed by photolithography. Then, the glass substrate 251 in the windowed area is etched away using this pattern of the photosensitive film 233. Anisotropic dry etching (vertical etching) is preferable to etch as faithfully as possible along the pattern of the photosensitive film 233, but wet etching or isotropic dry etching may also be used, taking into account the amount of side etching. After etching away the glass substrate 251, the silicon substrate 201 is etched away. Anisotropic dry etching (vertical etching) is preferable to etch as faithfully as possible along the pattern of the photosensitive film 233, but wet etching or isotropic dry etching may also be used, taking into account the amount of side etching. In Figure 8(a), the vertical etching line 234 is shown as a dashed line.

[0130] The central hole 205 is also formed by patterning a photosensitive film on top of the glass substrate 251, and etching a portion of the glass substrate 251 and the main substrate 201. If the size of the central hole is less than or equal to the thickness of the glass substrate 251, etching of only the glass substrate 251 is sufficient. Conversely, the thickness of the glass substrate 251 can be matched to the size of the central hole. In this case, by increasing the etching selectivity ratio between the glass substrate 251 and the main substrate 201, the size of the central hole becomes equal to the thickness of the glass substrate, allowing for extremely precise control of the central hole size. The patterning of the central hole can also be formed before forming the substrate sidewalls 201S-(A), 201S-(i){i=1, 2, ...}, 201S-(B) and the through holes 204C-(A), 204C-(i), 204C-(B). Next, the insulating film 238 is formed, followed by the conductive film 206. (Figure 8(b)) Next, the conductive film is patterned as needed by photolithography and etching. (Figure 8(c)) Conductive film 206 is formed on the inner surfaces of the through holes 204C-(A), 204C-(i){i=1, 2, ...}, and 204C-(B) which will become acceleration cavities. Conductive film 206 is also left on the inner surface of the central hole 205 that connects them, in the necessary areas. The other side (the upper substrate 202 side in Figure 8) is similarly fabricated and attached. (Figure 8(d)) Since the conductive film 206 is also attached to the side of the glass substrate 251, they can be attached and connected by applying pressure or heat treatment. Furthermore, if necessary, a conductive adhesive or solder metal can be attached to this connection part and attached together to ensure a sufficient connection. The conductive adhesive or solder metal can be applied by tracing with a dispenser or the like. Alternatively, a dispenser with the same injection port as the connection part can be fabricated, and the conductive adhesive or solder metal (molten or paste) can be attached to the connection part in one go from that injection port. Alternatively, the necessary part of the conductive film can be patterned with a photosensitive film to expose it, and solder metal can be deposited on the exposed part by a plating method. These can then be attached and heat treated. Furthermore, after this, an opening for vacuuming or purging / cleaning is made in the upper substrate 202 or lower substrate 203. Using this opening, plating solution can be injected and plated onto the connection part, etc. Alternatively, a gas for selective CVD (e.g., WF6) can be introduced through the opening, and a metal film (e.g., W) can be selectively laminated onto the exposed portion of the conductive film 206, such as the connection area. Alternatively, even if the connection is insufficient, electrodes can be formed on the top and bottom, so the same high-frequency voltage can be applied from both sides. When the same objects as in Figure 8(c) are attached to each other, the bonding surface is shown by the dashed line 244, and the shape is almost symmetrical above and below this bonding surface 244. Since this bonding is glass surface to glass surface, electrostatic anodic bonding cannot be performed, so if the glass substrate 251 is not used on one side, electrostatic anodic bonding can be used when bonding the top and bottom, thereby achieving a strong bond.

[0131] Next, as shown in Figure 8(e), contact holes are formed in the lower substrate 203 and the insulating film 238, and a conductive film is formed there to create contacts 245 that connect to the conductive film 206. Furthermore, a conductive film, electrode, and wiring 246 are formed to connect to these contacts 245. Similarly, contact holes are formed in the upper substrate 202 and the insulating film 238, and a conductive film is formed there to create contacts 248 that connect to the conductive film 206. Furthermore, a conductive film, electrode, and wiring 249 are formed to connect to these contacts 248. As shown in Figure 8(e), these contacts 245, 248 and electrode / wiring 245, 249 can be fabricated so as to connect to the conductive film 206 formed on the inner surface of each cavity chamber 204C-A, B, and 204C-i, without any increase in process. This allows a voltage to be applied individually from the outside to the conductive film 206 formed on the inner surface of each cavity. Furthermore, the upper and lower conductive films 206 join together at the junction surface 244, but even if the joining is insufficient, a (high-frequency) voltage can be applied from the upper and lower electrodes 246 and 249 respectively, so the same potential can be achieved. In addition, a vacuum opening 247 is formed in the lower substrate 203, and a vacuum opening 250 is formed in the upper substrate 202. These openings 247 and 250 can also be fabricated simultaneously in each cavity, the pressure in each cavity can be controlled individually, and very small spaces can be individually vacuumed, so ultra-low pressure cavities can be realized. As described above, using these openings, plating solution can be introduced into the cavity to plate the connection points of the internal conductive films, and selective CVD gas can be introduced into the cavity to laminate a selective conductive film at the connection points of the internal conductive films. In this way, very small accelerating cavities can be fabricated very easily. Next, we will explain the deflection electromagnet. A deflection electromagnet can be fabricated using the coils arranged above and below the quadrupole magnets shown in Figures 4, 11 to 14. Figure 15 shows the charged particle passage cavities of the deflection electromagnets 25, 30, 34, 37, etc., and the electromagnets placed therein in Figure 1. Figure 15(a) shows the arrangement of the charged particle passage cavities 257 and coils in the deflection electromagnet section. The charged particle passage cavities 257 have a central orbit with a curvature of radius R, and the cavity follows this curvature. Numerous tiny coils 258, which are electromagnets, are arranged above and below this cavity. The tiny coils 258 are densely arranged, covering the entire charged particle passage cavities 257. Charged particles G enter from the entrance of the charged particle passage cavities 257, are subjected to a Lorentz force by the vertical magnetic field inside the charged particle passage cavities 257, undergo circular motion with orbital radius R, and exit from the exit of the charged particle passage cavities 257.

[0132] Figure 15(b) shows a cross-sectional view of the charged particle passage cavity 257 along a cross section A1-A2 perpendicular to the center of curvature. The upper and lower ends of the through-chamber 264 formed in the main substrate 261 are closed by the upper substrate 262 and the lower substrate 263. This through-chamber 264 is the charged particle passage cavity 257, and it is a cavity with a central orbit that is a circular orbit with radius R. Multiple coils 260 (260-1, 2, 3) are arranged on the upper surface of the upper substrate 262. The coils 260 (260-1, 2, 3) are attached to the fourth substrate 266, the fourth substrate 266 is attached to the support pillars 265 (265-1, 2), and the support pillars 265 are attached to the upper substrate 262. The smaller the coil size (size in the plane perpendicular to the coil axis), the more turns there are, and the larger the current flowing through it, the larger the magnetic field at the end face of the coil. Therefore, arranging many small coils in a row results in a large magnetic field exerted on the charged particle passage cavity 257. As shown in Figure 13, the coil size of the present invention can be easily reduced, but reducing the wiring size also reduces the current that can flow. Therefore, it is not possible to determine the coil size in general, but if the size of the coil 260 is smaller than the charged particle passage cavity 257, multiple coils should be arranged so that the entire charged particle passage cavity 257 is completely covered by the coil 260. For example, when the coil size is 0.5 mm × 0.5 mm and the width of the charged particle passage cavity 257 is 1 mm, at least three coils should be arranged in the width direction of the charged particle passage cavity 257, as shown in Figure 15(b). In this case, since the central trajectory of the charged particle G is approximately at the center in the width direction of the charged particle passage cavity 257, it is desirable to arrange the coils so that the axis of one coil approximately coincides with this center. This is because the center of the coil end face has the strongest magnetic field. (However, the difference is not very large.) The coils are then densely arranged in the width direction with these coils in between. The distance between coils (for example, the distance between coils 260-1 and 260-2) is determined when the coils are manufactured (when the coil wiring boards are stacked and attached), and since there is no need to separate the coils, it can be made quite small. For example, it is possible to make the distance between wirings about the width of the coil wiring. If the coil size is larger than the charged particle passage cavity 257, one coil is sufficient in the width direction. Even in that case, it is desirable to position the coil so that its axis is on the center of the charged particle passage cavity 257.

[0133] Furthermore, regarding the direction of travel of charged particles in the charged particle passage cavity 257, the coils can be arranged without gaps using a coil pattern on the coil wiring substrate that matches this trajectory. For example, the coils 258 are arranged as shown in Figure 15(a). Then, the coil arrangement is separated together (or does not need to be separated) and attached to the fourth substrate, and attached to the upper substrate 262 using the support pillars 265 (265-1,2) as the base (or together). This is the same as explained in Figure 14. The axis of the coil 260 is made perpendicular to the upper substrate 262 and the surface of the main substrate. Also, the end face of the coil 260 should be as close as possible to the charged particle passage cavity 257, so it should be attached in contact with the upper substrate 262 or as close as possible. It is also desirable to thin portion 273-1 of the upper substrate 262 in the area where the coil 260 is placed (in reality, since the coil 260 (260-1, 2, 3) is wider than the width of the charged particle passage cavity 257, a recess is provided that can accommodate the entire coil 260, which is wider than the width of the charged particle passage cavity 257), and insert the coil 260 (260-1, 2, 3) into that recess. Furthermore, it is also desirable to open portion 273-1 of the upper substrate 262 in the area where the coil 260 is placed in the charged particle passage cavity 257 so that the magnetic field of the coil 260 is not weakened or disturbed by the upper substrate 262. In this case, since the airtight space of the charged particle passage cavity 257 is broken, it is desirable to ensure that the outer periphery of the lower end surface of the coil 260 (in this case, the outer periphery of multiple coils) adheres securely to the upper substrate 262. For example, adhesive (solder metal) is applied to the outer circumference of the coil, and room temperature bonding, high temperature bonding, diffusion bonding, or electrostatic anode bonding is reliably performed. Furthermore, the space 269 in which the coil is arranged is made an airtight space, and a vacuum opening 270 is provided in the fourth substrate 266, and the airtight space 269 is made to an ultra-low pressure through this vacuum opening 270. Naturally, vacuum openings are also provided in the upper substrate 262 and lower substrate 263 of the charged particle passage cavity 257, and vacuum can be drawn through these openings. As a result, the charged particle passage cavity 257 can be made into an ultra-low pressure space.

[0134] Similarly, coils 259 (259-1, 2, 3) are arranged on the lower substrate 263. Recesses 273-2 or openings 273-2 can be provided to bring the end faces of coils 259 (259-1, 2, 3) closer to the charged particle passage cavity 257. The coils 259 are attached to the fourth substrate 268, the support columns 267 (267-1, 2) are attached to the lower substrate 263, and the fourth substrate 268 is attached to the support columns 267. The space 271 where the coils 259 are arranged can be made an airtight space, and a vacuum opening 272 can be provided in the fourth substrate 268. It is desirable that the coils 259 on the lower substrate 263 side be the same as the coils 260 on the upper substrate 262 side, and arranged symmetrically with respect to the charged particle passage cavity 257. If they have the same characteristics, it is easier to control the magnetic field inside the charged particle passage cavity 257. However, even with coils of different sizes, the magnetic field within the charged particle passage cavity 257 can be controlled similarly by adjusting the magnitude of the current flowing through them. The present invention allows the shape of the coil to be set to match any shape of the cavity in which the coil is placed. For example, the coil wiring can be made into any curved shape. Furthermore, the coil size can be freely set, and the number and shape of the coil arrangement can also be freely changed. The deflection magnet sections 25, 30, 34, 37, etc. of the synchrotron shown in Figure 1 are fan-shaped cavities with a curvature of radius R, but coils corresponding to these can be freely arranged. Of course, the arrangement shape and number of quadrupole electromagnets and focusing electromagnets in linear cavities can also be freely set.

[0135] As already mentioned, the accelerator of the present invention allows for the fabrication of various functional devices in a single unit, enabling the substrate to be enlarged and further devices to be connected. The miniature accelerator, which is the synchrotron shown in Figure 1, can be connected to an even larger synchrotron, and both can be fabricated simultaneously. Figure 16 shows a miniature accelerator 10-1, which has the circular accelerator (synchrotron) 8-1 shown in Figure 1, connected to an even larger circular accelerator 8-2, representing a double synchrotron (or two-cycle synchrotron). The second synchrotron 8-2 surrounds the first small miniature accelerator 10-1. Together, these are referred to as the miniature device 10-2. The outlet 41-1 of the first small miniature accelerator 10-1 (which can be considered the same as the one shown in Figure 1) (this is 41 in Figure 1, but "-1" has been added to distinguish it from the outlet 41 of the second larger synchrotron (which is 41-2)) is connected to the inflorescence 21-2 of the second synchrotron 8-2. In other words, charged particles exiting the first small synchrotron 8-1 at exit 41-1 enter the storage ring 24-2, which is a cavity through which charged particles pass in the circular accelerator 8, via the inflector 21-2. A linear accelerator 39-1 can also be installed midway through the cavity after exiting the circular accelerator 8 to adjust the velocity of the charged particles entering the inflector 21-2. In addition, other deflection electromagnets, accelerating electrodes, deceleration electrodes, linear accelerators, focusing electromagnets, etc., may be installed along the way.

[0136] Charged particles injected from the inflator 21-2 into the storage ring 24-2 of the circular accelerator 8-2 may be focused using (horizontal) and (vertical) focusing electromagnets, then deflected and accelerated by the deflection electromagnet 25-2, and enter the next storage ring 27-2, where they are further accelerated in the high-frequency accelerating cavity 29-2, and then focused by the (vertical) focusing electromagnet 26-2 and the (horizontal) focusing electromagnet 28-2, and deflected by the electromagnetic The charged particles are deflected and accelerated by magnet 30-2, enter the next storage ring 33-2, where they are again focused by (vertical) focusing electromagnet 31-2 and (horizontal) focusing electromagnet 32-2, deflected and accelerated by deflection electromagnet 34-2, enter the next storage ring 38-2, where they are again focused by (vertical) focusing electromagnet 35-2 and (horizontal) focusing electromagnet 36-2, deflected and accelerated by the next deflection electromagnet 37-2, enter the next storage ring 24-2. In this way, the charged particles continue to rotate while accelerating through storage rings 24-2, 27-2, 33-2, and 38-2, and once the desired speed and number of charged particles are obtained, they enter a cavity that guides the charged particles to the outside (sometimes called a charged particle discharge cavity) 40-2, and the charged particles are extracted to the outside from the outlet 41-2 of the charged particle discharge cavity 40-2. A linear accelerator 39-2 may be installed in the middle of the charged particle discharge cavity 40-2 to further accelerate the charged particles. Alternatively, other deflection electromagnets, accelerating electrodes, deceleration electrodes, linear accelerators, focusing electromagnets, etc., may be installed in the middle.

[0137] Multiple circular accelerators can be connected in this way. This allows for increasing the velocity of charged particles. Furthermore, since charged particles can be stored in each storage ring, the required amount of charged particles can be prepared in a short time. For example, if the diameter of the storage ring cavity through which charged particles pass is 1 mm, the innermost miniature accelerator has a radius of 50 mm, the ring pitch is 3 mm, and the radius of the substrate is 270 mm, then 70 circular accelerators can be arranged.

[0138] Figure 17 shows a schematic diagram of how to fabricate a circular accelerator 8 by dividing it into sections on a substrate. In other words, it shows a method for fabricating an accelerator when the substrate cannot be made larger and the circular accelerator is large relative to the substrate size. If the circular accelerator 8 shown in Figure 1 is quite large, for example, requiring a 2m x 2m substrate, but only a 1m x 1m substrate is available, then four 1m x 1m substrates 44-1 to 44-4 (shown by dashed lines) are prepared, and patterns 43-1 to 43-4, each representing 1 / 4 of the circular accelerator 8, are fabricated on each. The substrates 44-1 to 44-4 are cut at the connection points 45-1, 2, 3, and 4, for example, using a dicing device. The parts to be connected here are the storage rings 24, 27, 33, and 38, so the connections are made so that the central axes of the storage rings in these parts align. To ensure a secure connection, the cut parts are polished or etched to make the connection surfaces smooth. The connections can be bonded using various joining methods. Another material can be interposed between the connection points. For example, glass substrates, plastic substrates, metal substrates, etc., can be used to fuse these with the connecting members or to perform electrostatic anode coupling. If the inside of the storage rings 24, 27, 33, and 38 can be kept at an ultra-low pressure, the connection points do not necessarily need to be securely attached. For example, a member or box can be prepared to cover this part, and the substrates 44-1 to 44-4 and the member or box can be attached to it. A member or box that is somewhat flexible or pliable so that the alignment of the storage rings 24, 27, 33, and 38 can be adjusted is desirable. It would be even better if a vacuum line could be provided in the member or box so that the inside can be vacuumed. By repeating this process, an extremely large circular accelerator can be made. Furthermore, as mentioned above, this method can also be applied to the fabrication of ionization sources and long linear accelerators. That is, many linear accelerators can be fabricated inside the substrate, cut by dicing or the like, and the cavities of these can be connected.

[0139] Figure 18 shows the microwave ion source of the present invention. The microwave ion source of the present invention has an upper substrate 162 attached to the upper surface of a main substrate 161 and a lower substrate 163 attached to the lower surface, and includes through chambers 164-1, 164-2, and 164-3 formed in the main substrate. Through chamber 164-1 is a waveguide through which high frequency 160 from a microwave or high frequency (hereinafter referred to as high frequency) oscillator is introduced through an opening 166-1 opened in the upper substrate 162 or the lower substrate 163. (Hereinafter also referred to as waveguide chamber 164-1.) Through chamber 164-2 is an adjacent chamber to waveguide chamber 164-1 and is a discharge chamber separated by a substrate side wall 161-2 having a central hole 165-1 (hereinafter also referred to as discharge chamber 164-2), and high frequency is incident from waveguide chamber 164-1 through the central hole 165-1 of the substrate side wall 161-2. A coil 169 surrounded by coil wiring is arranged around the discharge chamber 164-2, and this coil 169 generates a magnetic field B1 in the direction of the coil axis within the discharge chamber 164-2. Electrons within the discharge chamber 164-2 are accelerated by the high-frequency electric field, causing a discharge and plasma generation through collision and ionization of the gas. A high-frequency oscillator (not shown) is connected to the opening 166-1, but it is desirable to provide a seal portion 168-1 at the connection to prevent leakage of high frequency or vacuum from the connection between the high-frequency oscillator and the waveguide chamber 164-1. This seal portion 168-1 can be made by attaching an insulating material substrate such as glass or plastic with an adhesive. Note that this waveguide chamber 164-1 can also be omitted by providing it outside the main substrate 161. In that case, the high frequency 160 can be directly introduced into the discharge chamber 164-2. An opening 166-2 for introducing gas is provided in the upper substrate 162 and / or lower substrate 163 of the waveguide chamber 164-1. Various gases that serve as the source of ions are introduced through this opening 166-2 and sent to the discharge chamber 164-2 along with high-frequency waves. In addition, an opening 167-1 for vacuuming is provided in the upper substrate 162 and / or lower substrate 163 of the waveguide chamber 164-1, allowing the waveguide chamber 164-1 to be set to a predetermined pressure. Furthermore, openings can be provided in the upper substrate 162 and / or lower substrate 163 of each through-chamber to perform pressure and temperature measurements. The temperature of each through-chamber can also be controlled by irradiating it with infrared light from the outside.Alternatively, it can be heated from the outside with a heater, hot water, or hot air, and cooled using a Peltier element, cold water, cold air, cold gas, liquid helium, liquid nitrogen, or other cold liquids. Its small volume makes it easy to control.

[0140] The through-chamber 164-3 adjacent to the discharge chamber 164-2 is an ion extraction electrode chamber, and is separated from the discharge chamber 164-2 by a substrate side wall 161-3 having a central hole 165-2. The discharge chamber 164-2 has a substrate side wall 161-4 which is an extraction electrode and has a central hole 165-3, a substrate side wall 161-5 which is a deceleration electrode / focusing electrode and has a central hole 165-4, and a substrate side wall 161-6 which is an accelerating electrode and has a central hole 165-5. Ions (charged particles) generated in the discharge chamber 164-2 are attracted to the electric field of the extraction electrode 161-4, accelerate through the central hole 165-2 of the partition substrate side wall 161-3, then accelerate through the central hole 165-3 of the extraction electrode 161-4, converge through the central hole 165-4 of the adjacent deceleration electrode / converging electrode 161-5, and then accelerate through the central hole 165-5 of the adjacent accelerating electrode 161-6. This process is repeated to accelerate, decelerate, and converge the ion beam, which is then emitted into the deflection magnet chamber, converged in the quadrupole magnet chamber, or emitted into various through-holes for ion implantation and other applications, such as the mass spectrometry chamber. In the ion extraction electrode chamber, an ion beam with the desired velocity and current density is obtained by combining accelerating electrodes and deceleration / converging electrodes.

[0141] The substrate sidewalls with central holes that serve as partitions between each through-chamber typically do not have a conductive film laminated on them, so no acceleration or deceleration occurs there. The substrate sidewalls 161-4, which are lead electrodes and have central holes 165-3, have conductive films 170-1 (front side) and 170-2 (rear side) laminated on their sides. If the main substrate 161 is an insulator, the conductive film 170 can be formed directly on it; if the main substrate 161 is not an insulator, an insulating film should be interposed between the main substrate 161 and the conductive film 170. This conductive film 170 connects to a conductive film 176 formed on the lower surface of the upper substrate 162 and / or a conductive film 175 formed on the upper surface of the lower substrate 163, and further connects to contacts 173 formed on the upper substrate 162 and the lower substrate 163, and further connects to conductive film electrode wiring 172 formed on the upper surface of the upper substrate 162 and / or conductive film electrode wiring 174 formed on the lower surface of the lower substrate 163. Therefore, a voltage can be applied to the conductive film 170 from the conductive film electrode wiring 172 and / or 174. If the ions are negatively charged, a positive voltage is applied to the extraction electrode 161-4 to attract and accelerate the ions. If the ions are positively charged, a negative voltage is applied to the extraction electrode 161-4 to attract and accelerate the ions. A deceleration / converging electrode 161-5 is provided to prevent the ions from diverging or from accelerating too much. Its structure is the same as that of the extraction electrode 161-4. If the ions are negatively charged, a negative voltage is applied to the deceleration / converging electrode 161-5 to focus and decelerate the ions. If the ions are positively charged, a positive voltage is applied to the deceleration / converging electrode 161-5 to focus and decelerate the ions. The accelerating electrode 161-6 has the same structure and voltage application method as the extraction electrode 161-4. In this invention, since multiple substrate sidewall electrodes can be freely arranged, the ion beam G can be controlled by freely selecting the positive / negative and magnitude of the applied voltage to each substrate sidewall electrode.

[0142] An opening 166-3 for introducing gas may be provided in the upper substrate 162 and / or lower substrate 163 of the discharge chamber 164-2, and gas may be introduced into the discharge chamber 164-2 from here for ionization. Alternatively, an opening 167-2 for vacuuming may be provided in the upper substrate 162 and / or lower substrate 163 of the discharge chamber 164-2. The wiring of the coil 169 spirals around the outside of the discharge chamber 164-2, which generates a magnetic field in the discharge chamber 164-2 (first magnetic field generation). To assist this, a plurality of magnets 178, which are second magnetic field generating means, are arranged inside the coil 169 and outside the discharge chamber 164-2. These magnets 178 may be permanent magnets, and they have the same polarity in the longitudinal direction of the discharge chamber 164-2 (which is also the direction of ion propagation). As shown in Figure 18(b) (Figure 18(b) is a cross-sectional view along A1-A2 in Figure 18(a)), multiple magnets are arranged around the discharge chamber 164-2 at regular intervals. (Figure 18 shows a 16-pole magnet) The polarity of each magnet 178 facing the discharge chamber 164-2 is the same, and adjacent magnets are arranged so that their polarities are opposite. As a result, the magnetic field generated between each magnet becomes a multi-pole magnetic field (shown by a dashed line) B2 localized on the inner surface of the discharge chamber 164-2. This multi-pole magnetic field B2 decreases as you move from the inner surface of the discharge chamber 164-2 towards the inside. As a result, the magnetic field B2 becomes considerably weaker near the center of the discharge chamber 164-2, and a uniform plasma is generated near the center of the discharge chamber 164-2. Simultaneously, the magnetic field B2 suppresses plasma entry on the inner surface of the discharge chamber 164-2, reducing plasma loss. Furthermore, these magnets 178 further stabilize the plasma characteristics with high frequency, making it possible to reduce fluctuations in the ion current caused by the main magnetic field B1. While the plasma in the discharge chamber 164-2 and the amount of ion beam G can be stably generated by precisely controlling the main magnetic field B1, the placement of the magnets 178 enables even more precise control.

[0143] If the magnet 178 is a permanent magnet, for example, ferrite magnets, neodymium magnets, samarium cobalt magnets, Fe-Cr-Co magnets, Fe-Pt magnets, Fe-Al-Ni-Co magnets, and Co-Pt magnets can be used. In addition to permanent magnets, the magnet 178 may also be made up of multiple micro-coils of the present invention arranged in a row. That is, in the case of a 16-pole magnet, multiple micro-coils are arranged on the same side of each pole so that they have the same polarity. Alternatively, each pole may be a single coil. In that case, the coil will be long and thin, wound in the direction of ion propagation. When micro-coils are used, the magnetic field of each coil can be controlled by the applied current, so a more precise magnetic field B2 can be generated and controlled. When arranging the magnet 178, recesses 181 and 182 may be formed in the upper substrate 162 and lower substrate 163 in the area where the magnet 178 of the discharge chamber 164-2 is arranged, and the substrate thickness in that area may be reduced, thereby strengthening the magnetic field generation in the discharge chamber 164-2. Furthermore, when arranging the magnet 178, the fourth substrate 168 and the fifth substrate 177 can be attached to the upper substrate 162 and the lower substrate 163 outside the discharge chamber 164-2, leaving the area above the magnet 178 open, as shown in Figure 18. Leaving this area open makes it easier to pass current to the terminals of the micro-coil, especially when arranging a micro-coil. For example, wire bonding can be performed to the terminals of the micro-coil. Note that the fourth substrate 168 (168-2, 3) can also be used as the sealing substrate 168-1. That is, it can be attached to the upper substrate 162 using the same substrate.

[0144] A space is provided above the magnet 178, and as shown in Figure 18, the sixth substrate 179 is attached to the fourth substrate 168, and the seventh substrate 180 is attached to the fifth substrate 177. At this time, coil wiring 169 is formed on the sixth substrate 179 and the seventh substrate 180, and contacts 183-1 that connect to these coil wirings 169 are formed on the sixth substrate 179 and the seventh substrate 180, and are connected to contacts 183-2 formed on the fourth substrate 168. Furthermore, contacts 183-2 formed on the fourth substrate 168 are connected to contacts 183-3 formed on the upper substrate 162. Furthermore, contacts 183-3 formed on the upper substrate 162 are connected to contacts 183-4 formed on the main substrate 161. Furthermore, contacts 183-4 formed on the main substrate 161 are connected to contacts 183-5 formed on the lower substrate 163. Furthermore, contact 183-5 formed on the lower substrate 163 is connected to contact 183-6 formed on the fifth substrate 177. Then, contact 183-7 formed on the seventh substrate 180, which is connected to coil wiring 169 fabricated on the seventh substrate 180, is connected to contact 183-6 formed on the fifth substrate 177. As a result, the coil wiring 169 is connected in a spiral shape, surrounding the discharge chamber 164-2, and the coil 169 is fabricated. Note that when the magnet 178 is not placed, the fourth to seventh substrates are unnecessary, and the coil wiring pattern only needs to be formed on the upper substrate 162 and the lower substrate 163.

[0145] For the contacts 183 (183-1 to 183-7) of the coil wiring 169, contact holes are formed in each substrate, and if the substrate is not an insulator, an insulating film is formed on the inner surface of the contact hole. Next, if necessary, a conductive film for adhesion or seeding is laminated on the inner surface of the contact hole, and then the inside of the contact hole is filled or semi-filled with a conductive film using a plating method, skewing method, molten metal pouring method, dispensing method, electroforming method, CVD method, selective CVD method, etc. These can be attached sequentially. As shown in Figure 18(b), the magnet groups 184 (184-1, 184-2) located between the upper substrate 162 and the lower substrate 163, that is, on the side of the discharge chamber 164-2, are inserted into magnet group insertion through chambers 164-4 and 164-5, which are through chambers formed between the discharge chamber 164-2 and the substrate side walls 161-4 and 161-5. This insertion method is the same as the coil insertion method already described. Furthermore, the magnet group 184 (184-1, 2) can be fabricated by sequentially stacking the magnets 178 with non-magnetic material 183 in between. This fabrication method is the same as the coil fabrication method.

[0146] Alternatively, the magnet group 184 (184-1, 2) can be positioned on the side of the discharge chamber 164-2 by dividing the main substrate 161 into several sections and mounting the magnet group 184 (184-1, 2) and the non-magnetic material 183 on the divided main substrates in sequence. In that case, the thickness of the magnets 178 in the magnet group 184 (184-1, 2) and the non-magnetic material 183 interposed between them will be important. It is desirable to match the thickness of the divided main board 161 to the thickness of the divided main board 161. Furthermore, in Figure 18, the upper magnet 178 can be attached to the lower surface of the sixth substrate 179, and the magnet 178 can be positioned above the discharge chamber 164-2. In this case, it is desirable to match the thickness of the fourth substrate 168, the depth of the recess 181, and the thickness of the magnet 178, and to position it as close to the discharge chamber 164-2 as possible. Similarly, the lower magnet 178 can be attached to the upper surface of the seventh substrate 180, and the magnet 178 can be positioned below the discharge chamber 164-2. In this case, it is desirable to match the thickness of the fifth substrate 177, the depth of the recess 182, and the thickness of the magnet 178, and to position it as close to the discharge chamber 164-2 as possible.

[0147] The space 185 formed by the upper substrate 162, the fourth substrate 168, and the sixth substrate 179 can be made airtight, and the space 186 formed by the lower substrate 163, the fifth substrate 177, and the seventh substrate 180 can also be made airtight. In this case, if a portion of the upper substrate 162 and a portion of the lower substrate 163 in the discharge chamber 164-2, especially the area where the magnet 178 is placed, is removed, the magnetic field of the magnet is directly applied to the discharge chamber 164-2, so an efficient magnetic field B2 can be generated. In this case, if the magnet 178 is attached to the upper substrate 162 and the lower substrate 163, it is sufficient to leave the minimum amount of the upper substrate 162 and the lower substrate 163 that can support the magnet 178. If the magnet 178 is attached to the sixth substrate 179 and the seventh substrate 180, the substrates 162 and 163 directly below or directly above the magnet can be removed. Similarly, the substrate side walls 161-4 and 161-5 on the side of the discharge chamber 164-2 can also be removed. Alternatively, only a portion may be left intact. In this case, openings for evacuating spaces 185 and 186 or introducing gas can be provided in the sixth substrate 179 and the seventh substrate 180. Similarly, openings for evacuating through chambers 164-4 and 164-5 for inserting magnet groups or introducing gas can be provided in the upper substrate 162 and the lower substrate 163.

[0148] The size of a high-frequency ion source using the substrate of the present invention is estimated. The through-chamber of the present invention can be 0.1 mm to 100 mm in height and width, and larger sizes are possible by the adhesion method. It is also possible by the substrate ingot method using a mold. It can also be manufactured with a 3D printer. The length is determined by the substrate size, but can be 10 mm to 1000 mm, and larger sizes are possible by the connection method. For example, if the main substrate is 1 mm thick, the upper, lower, and 4th to 7th substrates are 0.2 mm thick, and the substrate size is 600 mm x 600 mm, the height of the discharge chamber will be 1 mm for one main substrate, 10 mm for 10 stacked substrates, 50 mm for 50 stacked substrates, and 100 mm for 100 stacked substrates. The width can be adjusted to the height from 1 to 100 mm, and the length can be manufactured up to about 500 mm. Furthermore, by setting the length of the discharge chamber 164-2 to 200 mm, and the width and thickness of the coil 169 to 1.5 mm x 1.5 mm with a pitch of 2 mm, a coil (electromagnet) with 100 turns can be manufactured. In Figure 18, the coil 169 is manufactured by embedding a conductive film in the substrate, but it is also possible to manufacture the coil 169 by cutting the substrate to individually cut out the accelerator including the discharge chamber 164-2, and then manually or automatically winding the coil wiring 169 around the discharge chamber 164-2. As described above, the ion source of the present invention using a substrate can be manufactured in various sizes.

[0149] Mass spectrometry is widely used for analyzing materials, such as the composition of solid surfaces and reaction solutions. Conventional mass spectrometers are complex in structure, and the assembly of individual components requires precision, making them difficult to manufacture. They are also at least 1 m in size. 3 Because of their considerable volume, these devices were expensive and difficult to transport. Therefore, by applying the present invention, which involves attaching an upper substrate (second substrate) and a lower substrate (third substrate) to the top and bottom of a main substrate (first substrate) to create microchannels, an ultra-compact and ultra-inexpensive mass spectrometer can be realized.

[0150] Figure 19 shows one embodiment of the mass spectrometry of the present invention. Through grooves (through chambers) 305, 306, 307, 308, and 309 are formed that penetrate from the top surface to the bottom surface of the main substrate 301, with the upper substrate 302 attached to the top surface of the main substrate 301 and the lower substrate 303 attached to the bottom surface of the main substrate 301. This attachment may be achieved by bonding using an adhesive, or, if the main substrate 301 is a semiconductor substrate such as Si, carbon-based, SiC-based, or compound-based, or a conductive substrate such as a metal plate, and the upper substrate 302 and lower substrate 303 are glass substrates, electrostatic anode bonding may be used, or other bonding methods described in this specification or in other literature may be used. The through groove 305 is a sample chamber, and is a space sandwiched between the main substrate side wall 301-1 and the substrate side wall (also called a partition wall) 301-2 that separates the sample chamber 305 from the adjacent ionization chamber 306. (The side is the side wall of the main substrate 301.) The sample 311 is placed in the sample chamber 305. The sample 311 can be easily analyzed by inserting it through a sample opening 312 opened in a part of the upper substrate 302 and adhering it to the substrate side wall 301-1. An accelerated ion beam strikes a part of the surface of the sample 311, causing a sputtering of part of the sample. However, since it is sufficient to have the sample to be analyzed (analytical sample) only in the part that is struck by this ion beam, a sample holder may be used as the sample 311. The sample 311 can also be fixed by evacuating it from a vacuum line 313 provided on the back side of the sample 311 and adhering it to the substrate side wall 301-1. If the sample chamber 205 is to be at a low pressure, the pressure can be further reduced using the vacuum line 313 to draw in the sample 311. If it is difficult to support the sample 311 at a similar low pressure, grooves can be cut into a part of the upper or lower substrate and the sample 311 can be placed in them to support it.

[0151] An ion beam inlet 314 is opened in the upper substrate 302 of the sample chamber 305. Through this ion beam inlet 314, an ion beam 316 emitted from an ion gun 315 located outside the mass spectrometer 300 is directed onto the sample 311, sputtering the constituent materials of the sample 311. The ion gun 315 can also be placed inside the main substrate 301, in which case the ion beam is directed onto the sample 311 from the ion gun 315 formed on the side of the sample chamber 305 (perpendicular to the plane of the paper in Figure 19) through a through groove in the main substrate 301. The ion beam 316 can be, for example, nitrogen (N) ions, argon (Ar) ions, or xenon (Xe) ions. The sputtered sample material consists of neutral particles 317 and ions (secondary ions) 318. These particles proceed to the central hole 310-2 of the partition wall 301-2 and enter the ionization chamber 306. The pressure inside the sample chamber 305 may be close to atmospheric pressure, but it is also possible to reduce the pressure inside the sample chamber 305 by opening a vacuum line 319 to the lower substrate 303, etc., and connecting a vacuum pump.

[0152] Within the sample chamber 305, insulating films such as silicon oxide films, silicon nitride films, and silicon oxynitride films may be laminated on the inner surface of the main substrate 301. These insulating films can be formed by CVD, PVD, oxidation, or nitriding methods. The central hole 310-2 is formed by separating the main substrate 301 into upper and lower halves, forming a through groove (half of it) for the sample chamber and partitions such as partition wall 301-2, then partially removing the central portion of partition wall 301-2 (the reverse is also acceptable; that is, forming the substrate sidewalls after creating the central hole), and then attaching the separated upper and lower main substrates 301 together. The insulating film is formed either before attaching the main substrate 301 or after attaching the main substrate 301.

[0153] The ionization chamber 306, formed adjacent to the sample chamber 305, is a space that ionizes neutral particles incident from the sample chamber 305 and focuses the ionized ions and ions incident from the sample chamber 305 towards the center. Next to the ionization chamber 306 is a charged particle acceleration chamber 307 that extracts and further accelerates the ions present in the ionization chamber 306. The ionization chamber 306 and the charged particle acceleration chamber 307 are separated by partitions 301-3, each having a central hole 310-3. In other words, the ionization chamber 306 is the space sandwiched between partitions 301-2 and 301-3. (The side surface is the side wall of the main substrate 301.)

[0154] In the ionization chamber 306, an ionization beam 320 is irradiated onto neutral particles 317 present in the ionization chamber 306 through the upper substrate 302 or the lower substrate 303 to ionize them. The ionization beam 320 can be any of the various beams introduced in previous literature, such as laser light, electron beam, synchrotron radiation, or X-rays. In addition to laser light, the laser light may also be irradiated onto a solid target, and the X-rays generated at that time may be used to further ionize the neutral particles. (Patent 3079585) To facilitate the passage of the ionization beam 320 into the ionization chamber, the portion of the upper substrate 302 or the lower substrate 303 that serves as the path for the ionization beam 320 may be removed (an opening may be provided).

[0155] Furthermore, a conductive film 321 is laminated on the inner surface of the ionization chamber 306, contact holes 323 are formed in the upper substrate 302 or the lower substrate 303, a conductive film is laminated in the contact holes 323, and conductive film electrodes and wiring 324 are formed on the upper substrate 302 or the lower substrate 303 so that a voltage can be applied to the conductive film 321 from the electrodes and wiring 324. By covering the inner surface of the ionization chamber with the conductive film 321 except for the portion through which the ionization beam 320 passes, the inner surface of the ionization chamber can be made to be at the same potential. When the ions are positive ions, a positive voltage is applied to the conductive film 321 to focus the positive ions to the center. When the ions are negative ions, a negative voltage is applied to the conductive film 321 to focus the negative ions to the center. By dividing the conductive film into upper, lower, left, and right sections and forming contact holes and electrodes and wiring in each conductive film, the voltage of each conductive film region can be controlled individually, so the position of the charged particle beam 325 in the ionization chamber 306 can be adjusted. If the main substrate 301 is a semiconductor substrate such as Si or a conductive substrate such as Cu or Al, the conductive film 321 is laminated after forming an insulating film. Alternatively, an insulating film may be laminated on top of the conductive film 321 as a protective film for the conductive film 321. The formation and patterning of the ionization chamber 306, partition wall 301, central hole 310, insulating film, conductive film 321, protective film, etc., can be achieved by dividing the main substrate 301, forming each part separately, and then attaching the divided main substrate pieces together, as described herein. Furthermore, if the ions 318 generated in the sample chamber 305 enter the ionization chamber 306, they will naturally be focused by the voltage applied to the inner surface of the ionization chamber 306 and become part of the ionization beam 325.

[0156] The charged particle beam 325, focused in the ionization chamber 306, enters the charged particle acceleration chamber 307 through the central hole 310-3. A partition wall 301-11 with a central hole 327-1 is positioned closest to the entrance of the acceleration chamber 307, and a conductive film 326 is laminated and patterned around the partition wall 301-11. This conductive film 326 is connected to a conductive film and conductive film electrodes / wirings 324 laminated in contact holes 323, and a voltage with the opposite charge to the ion charge of the charged particle beam 325 is applied, drawing out and accelerating the charged particle beam 325 from the ionization chamber 306. Therefore, this partition wall 301-11 can also be called an extraction electrode. By dividing the conductive film into upper, lower, left, and right sections and forming contact holes and electrodes / wirings in each conductive film, the voltage in each conductive film region can be controlled individually, thereby adjusting the position of the charged particle beam 325 in the central hole 327-1.

[0157] A partition wall 301-12 (which also has a central hole 327-2) is positioned adjacent to partition wall 301-11 in the direction of propagation of the charged particle beam 325, and a conductive film 326 is laminated and patterned around partition wall 301-12. This conductive film 326 is connected to a conductive film laminated in a contact hole 323 and conductive film electrodes / wirings 324, and a voltage with the same charge as or opposite to the charge of the ions in the charged particle beam 325 is applied. When a voltage with the same charge as the charge of the ions in the charged particle beam 325 is applied, the charged particle beam 325 is focused, and when a voltage with the opposite charge to the charge of the ions in the charged particle beam 325 is applied, the charged particle beam 325 is accelerated. In the direction of travel of the charged particle beam 325, the required number of partitions (also having central holes) are formed after partitions 301-12, each having a conductive film similar to that of partitions 301-12. A voltage with the same charge as or opposite to the ion charge of the charged particle beam 325 is applied to these conductive films to accelerate the charged particle beam 325 by the required number of times and to focus the charged particle beam 325 by the required number of times, guiding the charged particle beam 325 to the adjacent mass spectrometry chamber 308 separated by partitions 301-4, which have central holes 310-4. By dividing the conductive film of each partition after partitions 301-12 into upper, lower, left, and right sections, and forming contact holes and conductive films, electrodes, and wiring within each section individually, different voltages can be applied to the divided conductive films separately, thereby controlling the direction of travel and the focus position of the charged particle beam 325. As a result, it becomes possible to freely control the beam radius, position, and direction of the charged particle beam that enters the mass spectrometry chamber.

[0158] The size of the central holes 301-11, 12, etc., in the central holes 310-2, 3, 4, 5 and the partition walls 327-1, 2, etc., within the acceleration chamber 307 can be freely changed. For example, 310-2 is made larger to guide most of the sputtered neutral particles 317 and ions 318 into the ionization chamber. Also, the central hole 327-11 in the acceleration chamber 307 is made smaller than the central hole 310-3 at the boundary with the ionization chamber 306 to facilitate ion extraction. Furthermore, the central holes 327-2, etc., within the acceleration chamber 307 are made smaller than the central holes 310-3 and 327-11 to facilitate acceleration. A method to change the size of the central holes in this way is to divide the main substrate into upper and lower halves, form partition walls, then perform patterning (for example, a photoresist pattern) to match the size of the central holes to be formed in each partition wall, and then etch away the partition walls to match the size of each central hole. Alternatively, the main substrate can be divided into upper and lower halves, and patterning (for example, a photoresist pattern) can be performed at the locations where each partition wall should be formed to match the size of the central hole to be formed there. After etching away the main substrate to match the size of each central hole, each partition wall can be formed. Subsequently, insulating films, conductive films, protective films, and their patterning can be performed. The acceleration chamber 307 can also be the same acceleration chamber used in the accelerator described using Figures 1 to 17, etc.

[0159] The mass spectrometry chamber 308 is, for example, a quadrupole type. The mass spectrometry chamber 308 is adjacent to the acceleration chamber 307 and separated by a partition wall 301-4 having a central hole 310-4. When the charged particle beam 325 accelerated and focused in the acceleration chamber 307 enters the mass spectrometry chamber 308, the electric and magnetic fields of the mass spectrometry chamber 308 sort the trajectories of the charged particles according to the ratio of charge q to mass m (mass-charge ratio) m / q, and only specific charged particles enter the ion detection chamber 309. The ion detection chamber 309 is separated from the acceleration chamber 307 by a partition wall 301-5 having a central hole 310-5.

[0160] The mass spectrometry chamber 308 is, for example, a quadrupole type. Figure 19 shows it as a quadrupole mass spectrometry type. Here, the mass spectrometry chamber 308 has no partitions other than the partitions 301-4 and 301-5 which are its separating walls, and the main substrate 301 is a through groove (or through chamber) that penetrates from the upper substrate 302 to the lower substrate 303. (The side is the main substrate 301.) Four quadrupole electrodes 329 (shown as 329-1 and 329-2 in Figure 19) are arranged in the mass spectrometry chamber, which are long in the direction of propagation of the charged particle beam 325. One or more conductive films / electrodes / wirings 324 are connected to each quadrupole electrode 329 through the conductive film in the contact hole 323, and a voltage can be applied. In addition, vacuum openings 330 are opened in the upper and lower substrates 302 and 303, allowing the inside of the mass spectrometry chamber 308 to be evacuated to a predetermined pressure (for example, 10 -9 ~10 -2 It can be made torr. Similarly, another opening can be formed to allow purging or cleaning gases to flow through. Furthermore, openings can be provided for introducing or exiting gases for selective CVD (e.g., WF6) or plating solutions (e.g., copper sulfate solution for Cu plating) for connecting conductive films within the mass spectrometry chamber 308.

[0161] Figure 20 shows an example of a method for fabricating a quadrupole mass spectrometry chamber. A conductive film 355, which will become a quadrupole electrode, is laminated onto a third substrate 353 and patterned to form the quadrupole electrode 355. The conductive film 355 is, for example, a metal such as molybdenum (Mo), tungsten (W), chromium (Cr), titanium (Ti), copper (Cu), iron (Fe), nickel (Ni), aluminum (Al), or an alloy thereof, or a compound of these with Si such as silicide. It is laminated by PVD or CVD, and then patterned by photolithography + etching. Alternatively, a quadrupole electrode rod of this size is attached by a deposition method. When the third substrate 353 is an insulator such as glass, quartz, ceramic, or plastic, it can be laminated or attached directly. However, when the third substrate 353 is a conductor or semiconductor, an insulating film is laminated before the conductive film 355 is laminated. Alternatively, the conductive film 355 can also be formed by a coating method. A conductive paste can be applied to the third substrate 353 using a metal mask, and then heat-treated to form the desired quadrupole electrode 355. The conductive paste contains the above-mentioned metal or the like. Alternatively, the conductive film 355 can be formed by attaching a foil of the above-mentioned metal or the like to the third substrate 353 and then patterning it. Furthermore, the main substrate 351 has a recess 354 formed by cutting out the portion 354 where the quadrupole electrode 355 will be placed. If the main substrate 351 is a semiconductor substrate such as a Si substrate, an insulating substrate such as a glass substrate or quartz substrate, or a metal substrate, it can be formed by a simple process. (Figure 20(a))

[0162] Next, as shown in Figure 20(b), the main substrate 351 and the third substrate 353 are attached. This attachment can be carried out using the method described herein. At this time, the depth of the recess 354 is made greater than the height of the quadrupole electrode 355 so that the main substrate 351 and the quadrupole electrode 355 do not come into contact. Next, the upper surface of the main substrate 351 is patterned with photoresist or the like to form through grooves that will become the mass spectrometry chamber 356. At this time, since it is a matter of aligning patterns, precise alignment is performed. When etching the main substrate 351 to form the through grooves 356, the conductive film 355 and the third substrate 353 are etched with a dry etching gas or wet etching solution that has a high etching selectivity ratio, and the conductive film 355 and the third substrate 353 are etched as little as possible. (Figure 20(c)) At the stage shown in Figure 20(a), a protective film, such as an insulating film (for example, an SiO2 film, a SiN film, etc.), can also be formed on the conductive film 355. In this case, the etching selectivity ratio is between the main substrate 351 and the protective film.

[0163] A similar process is performed on the second substrate side 352 to attach the main substrate 351 (351-1) to the second substrate side 352, forming a through groove 356 and a conductive film 355, which is a quadrupole electrode 355, inside it. The main substrate 351 (351-1) attached to the second substrate side 352 and the main substrate 351 (351-2) attached to the third substrate side 353 are then aligned so that their through grooves 356 meet and attached to each other. Attachment methods include adhesive, diffusion bonding, room temperature bonding, and high-temperature bonding. Furthermore, when the main substrate 351 is a semiconductor substrate such as Si or a conductive substrate such as metal, a glass substrate or quartz substrate 357 can be used to firmly attach it by electrostatic coupling (anodic bonding). In this case, the portion of the sandwiched substrate 357 that will become the mass spectrometry chamber 356 is also removed, and the second substrate side 352 and / or the third substrate side 353 are aligned and attached to the substrate 357. (Either one or the other is also acceptable.) As a result, a sealed mass spectrometry chamber 358 (356 is joined to form 358) can be formed. (Figures 20(d), (e)) In addition, in the process shown in Figure 20(a), it is also possible to attach a main substrate 351 with through grooves instead of recesses. In this case, precise alignment of the through grooves and the conductive film pattern is performed. If the depth of the through groove only needs to be one groove, in Figure 20(d), the side of the main substrate that is missing (for example, the second substrate 352 with the conductive film 355 formed on it, without 351 (351-1)) can be attached to the main substrate 351 (351-2).

[0164] Next, contact holes 371 are formed in the second substrate 352 and the third substrate 353, and a conductive film is laminated within the contact holes 371 to form electrodes and wiring 372. The laminated conductive film within the contact holes 371 can be produced using CVD, PVD, plating, coating, etc. The electrodes and wiring 372 can also be produced using CVD, PVD, plating, coating, etc. The conductive film within the contact holes 371 and the electrodes and wiring 372 can be used interchangeably. The electrodes and wiring 372 can also be routed along the second substrate 352 and the third substrate 353, allowing for the provision of pad electrodes (electrode connection points to the outside) in appropriate locations. A protective film can also be formed if necessary. Note that Figure 20 is a view from the direction of propagation of the ion beam 325 in Figure 19, i.e., a cross-sectional view perpendicular to the plane of the paper in Figure 19.

[0165] As a result, AC (high-frequency voltage) and DC voltage can be applied to the four quadrupole electrodes 355 (355-1, 2, 3, 4) from the external electrode 372. Since the mass spectrometry chamber can be formed using the semiconductor process as described above, a mass spectrometry chamber of extremely precise size can be fabricated, enabling highly accurate mass spectrometry. Furthermore, as is clear from this process, the depth of the mass spectrometry chamber can be increased by stacking and bonding the main substrates (a glass substrate or the like may be interposed in between). For example, the thickness of a typical Si substrate is at most about 1 mm, but stacking 10 of them results in a depth of 10 mm. Of course, even thicker Si substrates can be fabricated, so a predetermined thickness can be achieved by bonding a small number of substrates. In addition, by forming a vacuum line opening 359 and connecting a vacuum pump, the mass spectrometry chamber 358 can be evacuated and the pressure reduced. This invention provides a mass spectrometry chamber of a desired size (even if the height of the chamber is extremely small, such as 1 mm or less, or 100 μm or less), and because it has few and strong joints, it can easily achieve extremely low pressures or desired pressures. The process is simple, and a small vacuum pump is sufficient, enabling the realization of a low-cost mass spectrometry system.

[0166] In quadrupole mass spectrometry, only ions with a predetermined m / q ratio pass through the quadrupole electrode 355 (329 in Figure 19) and reach the detection chamber (309 in Figure 19). Ions with other m / q ratios collide with the quadrupole electrode 355 and the surrounding main substrate 351, second substrate 352, and third substrate 353, potentially causing damage. Therefore, increasing the size of the mass spectrometry chamber 358 reduces the kinetic energy of the ions, thereby minimizing damage. Figure 20(f) shows the structure and method for increasing the size of the mass spectrometry chamber. Specifically, the second main substrate 361 (361-1, 2), the fourth substrate 362, and the fifth substrate 363 are attached to the top and bottom of the second substrate 352 and the third substrate 353, and the upper and lower mass spectrometry chambers 365 and 368 are provided above and below the mass spectrometry chamber 358, respectively. Furthermore, the left-right width (w21) of the mass spectrometry chamber 358 is increased, and the left and right walls of the main substrate 351 are separated from the quadrupole electrodes 355 (increasing d21). Furthermore, the planar area of ​​the upper mass spectrometry chamber 365 and the lower mass spectrometry chamber 368 is made larger than the area of ​​the mass spectrometry chamber 358 (i.e., when the left-right width of the upper mass spectrometry chamber 365 is w22 and the left-right width of the lower mass spectrometry chamber 368 is w22, w23 > w21), and the areas of the second substrate 352 and the third substrate 353 are made large enough to strongly support the quadrupole electrode 355, and the partition between the mass spectrometry chamber 367 and the upper mass spectrometry chamber 365 and the lower mass spectrometry chamber 368 (the second substrate 352 and the third substrate 353) is removed to make the openings 364 and 367 as wide as possible (they may be divided into multiple openings). Also, vacuum line openings 366 and 369 are provided on both the fourth substrate 362 and the fifth substrate 363. Furthermore, the vacuum line openings 366 and 369 are made larger to a degree that does not cause problems (they may be divided into multiple openings). The heights (h22, h23) of the upper and lower chambers 365 and 368 of the mass spectrometer will also be increased.

[0167] For example, the dimensions of the mass spectrometry chamber 358 are as follows: w21=6mm, h21=2mm, d21=1.8mm, the thickness of the main substrate 351 (351-1, 2) is 0.8mm each, the thickness of the glass substrate 357 is 0.4mm, the thickness of the second substrate 352 is 0.3mm, the thickness of the third substrate 353 is 0.3mm, the thickness of the fourth substrate 362 is 0.5mm, the thickness of the fifth substrate 363 is 0.5mm, the width of the quadrupole electrode 355 is 0.2mm, the height is 50μm, the length of the quadrupole electrode (horizontal length in Figure 19, or length perpendicular to the plane of the paper in Figure 20) is 1mm to 100mm, w22=8mm, h22=2mm, w23=8mm, h23=2mm. Alternatively, an example of a larger mass spectrometry chamber would be as follows: the dimensions of mass spectrometry chamber 358 would be w21=30mm, h21=10mm, d21=9mm, the thickness of the main substrate 351 (351-1, 2) would be 5mm each, the glass substrate would be 0.5mm thick, the thickness of the second substrate 352 would be 1mm, the thickness of the third substrate 353 would be 1mm, the thickness of the fourth substrate 362 would be 1mm, the thickness of the fifth substrate 363 would be 1mm, the width of the quadrupole electrode 355 would be 1mm, the height would be 0.4mm, the length of the quadrupole electrode would be 20mm~200mm, w22=40mm, h22=10mm, w23=40mm, h23=10mm.

[0168] As a result of the above, ions that pass through the gap between the quadrupole electrodes 355 without reaching the ion detection chamber 309 will have a reduced ion migration speed even when moving towards the wall (side) of the main substrate 351, resulting in less damage to the wall (side) of the main substrate 351. In particular, by providing numerous or wide-area vacuum openings 364 and 367 around the wall (side) of the main substrate 351, ions that have escaped from the inside of the quadrupole electrodes will exit through these openings 364 and 367 into the upper mass spectrometry chamber 365 and the lower mass spectrometry chamber 368. Furthermore, damage can be reduced by covering the inner surface of the mass spectrometry chamber 358 with a film that is resistant to ion damage. For example, silicon oxide films, silicon nitride films, and alumina have high ion resistance. These films can be laminated by CVD or PVD methods. Furthermore, the ion movement velocity is reduced for ions heading towards the upper mass spectrometry chamber 365 and the lower mass spectrometry chamber 368, resulting in less damage to the walls (sides) of the fourth substrate 362, fifth substrate 363, and second main substrate 361. Also, since the ions are discharged to the vacuum pump side through the vacuum openings 366 and 369, the impact on the mass spectrometer is minimal. In addition, providing purging or cleaning openings in the fourth substrate 362 and fifth substrate 363 and occasionally purging or cleaning them with, for example, nitrogen, Ar, He, is effective in maintaining a clean state of the mass spectrometer and extending its lifespan.

[0169] Alternatively, by forming a conductive film on the inner surface of the ion detection chamber 309 and allowing a voltage to be applied from the outside, ion collisions can be reduced by applying a weak voltage with the same charge as the ions. The quadrupole electrode 355 is connected to the conductive film 372 formed on the second substrate 352 and the third substrate 353 through a conductive film laminated in contact holes 371 formed in the second substrate 352 and the third substrate 353, then to the conductive film 373 formed on the inner surface of the second main substrate 352 or the third substrate 353, and further to the conductive film 374 formed on the upper and lower surfaces of the fourth substrate 362 or the fifth substrate 363. The conductive film 374 is connected to the conductive film electrode / wiring 376 formed on the upper surface of the fourth substrate 362 or the fifth substrate 363 through a conductive film laminated in contact holes 375 formed in the fourth substrate 362 or the fifth substrate 363. As a result, the four quadrupole electrodes 355 can have DC voltage and AC (high frequency) voltage applied from the external electrodes and wiring 376. Furthermore, if multiple external electrodes and wiring are provided to a single quadrupole electrode as shown in Figure 19, DC voltage and AC (high frequency) voltage can also be applied from these multiple electrodes, allowing for precise control of the ion 325 trajectories.

[0170] An example of a method for producing Figure 20(f) from the state shown in Figure 20(e) will be described. A through hole 368 is formed in the second main substrate 361 (361-2) attached to the fifth substrate 363, penetrating through to the fifth substrate 363. In addition, a recess 377 is formed to widen the overlapping area between the conductive film 373 formed on the second main substrate 361 (361-2) side and the conductive film 372 formed on the lower surface of the third substrate (lower substrate) 353. The depth of this recess 377 is set to approximately the sum of the thickness of the conductive film 372 and the conductive film 373 (consider the thickness of the insulating film if an insulating film is formed on the substrate. Also consider the thickness if a conductive adhesive containing a low-melting-point solder alloy is used) to ensure sufficient connection between the conductive film 372 and the conductive film 373. After forming the through-holes 368 and recesses 377, conductive films 373 and 374 are laminated, forming conductive films 373 and 374 on the required parts of the sides of the recesses 377 and through-holes 368, and on the required parts of the upper surface of the fifth substrate 363. The conductive films 373 and 374 are made of Cu, Al, conductive Si, Cr, Ni, W, Mo, Ti, Au, Ag, alloys thereof, conductive polycrystalline silicon, various silicides, conductive graphene, and conductive nanotubes. If the electrical connection between conductive films 373 and 372 is insufficient, conductive adhesives or solder alloys (e.g., Pb-Sn system, Ag-Cu-Sn system, Sn-Zn-Bi system, Cu-Sn system, Sn-Ag-In-Bi system, Sn-Zn-Al system, etc.) are attached to the conductive films 372, 373, and 374.

[0171] The conductive film 372 formed on the lower surface of the third substrate 353 is routed as wiring as shown in Figure 20(f), and is also formed on the side connecting to the recess 377, so that it can be connected to the conductive film 373. Vacuum openings 364 and 367 are also formed on the second substrate (upper substrate) and the third substrate (lower substrate). These openings 364 and 367 may be formed before forming the conductive film 372, or they can be formed after patterning the conductive film 372 by etching away the second substrate (upper substrate) and the third substrate (lower substrate). Alternatively, they can be formed in the same way as the quadrupole electrode 355 before attaching the main substrate 351 to the second substrate (upper substrate) and the third substrate. Next, while aligning the mass spectrometry lower chamber 368 to the mass spectrometry chamber 358, the second main substrate 361 with the fifth substrate 363 attached is attached to the third substrate 353. Subsequently, contact holes 375 and a vacuum opening 369 are formed in the fifth substrate 363, a conductive film is laminated in the contact holes 375, and then conductive film electrodes and wiring 376 connected to the contact holes 375 are formed. If the conductive film enters the mass spectrometry lower chamber 368 through the vacuum opening 369, the vacuum opening 369 may be formed after the conductive film electrodes and wiring 376 are formed.

[0172] The same applies to the fourth substrate 362, the second main substrate 361 (361-1), and the second substrate (upper substrate). Furthermore, as described in other parts of the specification, if the substrate is not an insulator, an insulating film such as a silicon oxide film is laminated before laminating the conductive film, and an insulating film such as a silicon oxide film is laminated on top of the conductive film to protect it. In addition, after attaching the main substrate 361 to the upper substrate 362 or lower substrate 363 and forming openings 369 and 366, a selective CVD gas can be flowed through the openings 369 and 366, or a plating solution can be introduced, to ensure a secure connection between the conductive films 372 and 373, thereby selectively laminating the conductive film at the connection point.

[0173] Figure 21 illustrates an example of a structure and method for attaching a quadrupole electrode to a substrate. Figure 21(a) is a cross-sectional view, and (b) is a plan view. The quadrupole electrode 386 is attached to the second substrate 382 and the third substrate 383. The quadrupole electrode 386 is shown with a circular cross-section, but it can also be a commonly used rectangular hyperbola shape, or any other arbitrary shape, and the optimal shape for the quadrupole electrode can be selected. Also, as shown in Figure 21(b), the longitudinal direction is straight, and the whole is rod-shaped. It is also possible to make it corrugated in the longitudinal direction, and the shape that is optimal for mass spectrometry in terms of the electric field within the quadrupole electrode can be selected. Various materials such as Mo-based alloys, SUS, and copper-based alloys can be used for the material of the quadrupole el...

Claims

1. A second main substrate is attached to or above an upper substrate (first upper substrate), and a second upper substrate (second upper substrate) is attached to the second main substrate. Above the first through-chamber (first through-chamber), a through-chamber (second through-chamber) is formed in the second main substrate, penetrating from the second upper substrate to the first upper substrate, and an opening is provided in a part of the first upper substrate between the first and second through-chambers. The aforementioned opening is formed between two quadrupole electrodes located on the lower surface of the first upper substrate. The electrodes and wiring formed on the first upper substrate that connect to the quadrupole electrodes located on the lower surface of the first upper substrate are connected to the wiring (second wiring) formed on the side surface of the second through chamber. The second wiring is connected to the electrodes and wiring formed on the lower surface of the second upper substrate. Furthermore, the electrodes and wiring formed on the lower surface of the second upper substrate are connected to the contact wiring (second upper substrate contact wiring) formed on the second upper substrate. The second upper substrate contact wiring is characterized by being connected to electrodes and wiring (second upper electrodes and wiring) formed on the second upper substrate. A third main board is attached to the lower surface or below the lower board (first lower board), and a second lower board (second lower board) is attached to the lower surface of the third main board. In the lower part of the aforementioned through chamber (first through chamber), a through chamber (third through chamber) is formed in the third main substrate, penetrating from the second lower substrate to the first lower substrate. An opening is provided in a part of the first lower substrate between the first through chamber and the third through chamber. The aforementioned opening is formed between two quadrupole electrodes positioned on the upper surface of the first lower substrate. The electrodes and wiring formed on the lower surface of the first lower substrate, which are connected to the quadrupole electrodes located on the upper surface of the first lower substrate, are connected to the wiring (third wiring) formed on the side surface of the third through chamber. The third wiring is connected to the electrodes and wiring formed on the upper surface of the second lower substrate. Furthermore, the electrodes and wiring formed on the upper surface of the second lower substrate are connected to the contact wiring (second lower substrate contact wiring) formed on the second lower substrate. The second lower substrate contact wiring is characterized by being connected to the electrodes and wiring (second lower electrodes and wiring) formed on the lower surface of the second upper substrate. A mass spectrometer characterized by applying a high-frequency voltage and / or a DC voltage from the second upper electrode and wiring and the second lower electrode and wiring.

2. The mass spectrometer according to claim 1, characterized in that the second upper substrate and the second lower substrate are a glass substrate, a quartz substrate, a plastic substrate, an alumina substrate, an AlN substrate, a ceramic substrate, a polymer substrate, or a laminated substrate thereof.

3. When the second and third main substrates are insulating substrates, they are characterized by being glass substrates, quartz substrates, plastic substrates, alumina substrates, AlN substrates, ceramic substrates, polymer substrates, or laminates thereof. When the second and third main substrates are semiconductor substrates, they are characterized by being Si substrates, SiC substrates, C substrates, GaAS substrates, InP substrates, GaN substrates, CdS substrates, binary compound semiconductors, ternary compound semiconductors, or laminated substrates thereof. The mass spectrometer according to claim 1 or 2, characterized in that, when the second main substrate and the third main substrate are semiconductor substrates, or when they are conductive substrates, they are Cu, Al, Ti, Zn, Fe, alloys containing these metals, or laminated substrates thereof.

4. The mass spectrometer according to any one of claims 1 to 3, characterized in that the mass spectrometer is a quadrupole mass spectrometer, one quadrupole electrode is arranged on the upper surface of an upper substrate attached to the upper part of the mass spectrometer, one quadrupole electrode is arranged on the lower surface of a lower substrate attached to the lower part of the mass spectrometer, and one quadrupole electrode is arranged in each of the left and right through chambers formed in a main substrate provided next to the mass spectrometer.

5. The mass spectrometer according to claim 4, characterized in that the left and right through chambers formed in the main substrate next to the mass spectrometry chamber are separated from the mass spectrometry chamber by a substrate side wall.

6. The mass spectrometer according to any one of claims 1 to 5, characterized in that the quadrupole electrodes are rods, and these rods are attached to predetermined locations on the upper substrate, the lower substrate, and the main substrate.

7. The mass spectrometer according to any one of claims 1 to 6, characterized in that the quadrupole electrode is a conductive film electrode that is laminated on an upper substrate or a lower substrate by CVD, PVD, plating, electroforming, screen printing, squeegee, spin coating, dispensing, or a combination thereof, and processed into a predetermined shape.

8. The mass spectrometry chamber is a quadrupole mass spectrometry chamber, characterized in that two quadrupole electrodes are arranged on the lower surface of an upper substrate attached to the upper part of the mass spectrometry chamber, on the side facing the mass spectrometry chamber, and two quadrupole electrodes are arranged on the upper surface of a lower substrate attached to or formed at the lower part of the mass spectrometry chamber, on the side facing the mass spectrometry chamber. A through-chamber (second through-chamber) is formed above an upper substrate (first upper substrate) to which two quadrupole electrodes are attached or formed, and a second upper substrate is attached to the upper part of the second through-chamber. A portion of the first upper substrate located between the mass spectrometry chamber (first through-chamber) and the second through-chamber is removed, and the pressures in the first and second through-chambers are approximately the same. A mass spectrometer characterized in that a through-chamber (third through-chamber) is formed below a lower substrate (first lower substrate) to which two quadrupole electrodes are attached or formed, a second lower substrate is attached to the lower part of the third through-chamber, a portion of the first lower substrate located between the mass spectrometry chamber (first through-chamber) and the third through-chamber is removed, and the pressures in the first and third through-chambers are approximately the same.

9. The mass spectrometer according to claim 8, characterized in that the mass spectrometer includes one quadrupole electrode (first quadrupole electrode) attached to or formed on the lower surface of the upper substrate, one quadrupole electrode (second quadrupole electrode) attached to or formed on the upper surface of the lower substrate, a portion of the substrate on one side of the mass spectrometer extending in the Y direction within the mass spectrometer, and one quadrupole electrode (third quadrupole electrode) attached to or formed on the upper or lower surface of the substrate on the extended side, and a portion of the substrate on the other side of the mass spectrometer extending in the Y direction within the mass spectrometer, and one quadrupole electrode (fourth quadrupole electrode) attached to or formed on the upper or lower surface of the substrate on the extended side.

10. The upper substrate has contact wiring (first upper substrate contact wiring) connected to the first quadrupole electrode and electrodes and wiring (first upper substrate electrodes and wiring) connected to the first contact wiring on its upper surface. The lower substrate has contact wiring (first lower substrate contact wiring) connected to the second quadrupole electrode and electrodes and wiring (first lower substrate electrodes and wiring) connected to the second contact wiring on its lower surface. The side substrate to which the third quadrupole electrode is attached or formed has wiring that connects to the third quadrupole electrode, and this wiring connects to wiring formed on the side of the main substrate. Furthermore, the wiring formed on its side is connected to the wiring formed on the upper or lower board, and that wiring is further connected to the contact wiring (second upper board contact wiring or second lower board contact wiring) formed on the upper or lower board. Furthermore, the mass spectrometer according to claim 8 or 9, characterized in that the second upper substrate contact wiring or the second lower substrate contact wiring is connected to electrodes and wiring (second upper substrate electrodes and wiring or second lower substrate electrodes and wiring) formed on the upper surface of the upper substrate or the lower surface of the lower substrate.

11. A through-chamber (second through-chamber) is formed above the aforementioned upper substrate (first upper substrate), the second upper substrate is attached to the upper part of the second through-chamber, and a portion of the first upper substrate located between the mass spectrometry chamber (first through-chamber) and the second through-chamber is removed, characterized in that the pressures in the first and second through-chambers are approximately the same. A mass spectrometer according to any one of claims 8 to 10, characterized in that a through chamber (third through chamber) is formed below the lower substrate (first lower substrate), a second lower substrate is attached to the lower part of the third through chamber, a portion of the first lower substrate located between the mass spectrometry chamber (first through chamber) and the third through chamber is removed, and the pressures in the first through chamber and the third through chamber are substantially the same.

12. The mass spectrometry laboratory is a quadrupole mass spectrometry laboratory, and in the mass spectrometry laboratory, The upper substrate has a quadrupole electrode (first quadrupole electrode) attached to or formed on its lower surface and a quadrupole electrode (third quadrupole electrode) attached to or formed on its upper surface, The upper substrate has contact wiring (upper substrate contact wiring) formed on the upper substrate that connects to a quadrupole electrode (first quadrupole electrode) located on the lower surface of the upper substrate, and electrodes and wiring (upper substrate upper electrode and wiring) formed on the upper surface of the upper substrate that connect to the upper substrate contact wiring, and the lower substrate has contact wiring (lower substrate contact wiring) formed on the lower substrate that connects to a quadrupole electrode (third quadrupole electrode) located on the upper surface of the lower substrate, and electrodes and wiring (lower substrate lower electrode and wiring) formed on the lower surface of the lower substrate that connect to the lower substrate contact wiring, The main substrate has quadrupole electrodes (second quadrupole electrode and fourth quadrupole electrode) formed on two sides in the Y direction, The second quadrupole electrode and the fourth quadrupole electrode have contact wiring formed on the upper substrate and / or the lower substrate, and electrodes and wiring formed on the upper surface of the upper substrate and / or the lower surface of the lower substrate (upper surface electrodes and wiring and / or lower surface electrodes and wiring of the lower substrate). The mass spectrometer according to claim 10, characterized in that a high-frequency voltage and / or DC voltage is applied from the upper surface electrodes and wiring of the upper substrate and the lower surface electrodes and wiring of the lower substrate.

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