Method for manufacturing silicon carbide single crystals

Abstract

To provide a technique for reducing micro-pipe defects in silicon carbide single crystal developed through crystal growth from seed crystal, in a more cost-effective and favorable manner.SOLUTION: A method for producing a silicon carbide single crystal includes sublimating powdery solid raw material (4) and recrystallizing it on a growth surface (52), which is one surface of a seed crystal (5), thus growing a growth crystal (6) on the growth surface. On the growth surface of the seed crystal, a strain layer (54) is formed, which is a machined altered layer that has been flattened using a grindstone. The seed crystal has an off-angle (θ) of 4 degrees or more. The strain layer is provided at least in a region with micro-pipe defects (MP). The strain layer has a surface roughness Ra of more than 1 nm.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a silicon carbide single crystal. In the law It relates thereto.

Background Art

[0002] Patent Document 1 discloses a technique for preventing the generation of micropipe defects and stacking defects during single crystal growth by providing grooves on the single crystal growth surface in a seed crystal for growing a silicon carbide single crystal. In the technique described in Patent Document 1, the width of the groove to be formed is preferably 2 to 10 mm. Further, the aspect ratio of the groove represented by the width / depth of the groove is preferably 0.1 to 1.5. Furthermore, the surface occupancy ratio of the groove (that is, the area of the groove / area of the portion other than the groove) represented by the ratio of the area of the groove on the crystal growth surface of the seed crystal to the area of the portion other than the groove is preferably 0.2 to 10. Micro-pipe defects existing in the portion other than the groove portion of the seed crystal will exist in the single crystal as the single crystal grows, but depending on the area ratio between the groove portion and the portion other than the groove portion in the seed crystal, the proportion of the existence of micro-pipe defects is significantly reduced.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the technology described in Patent Document 1, there is a concern that groove processing on the seed crystal will lead to a significant increase in manufacturing costs. Furthermore, although the proportion of micropipe defects present in the seed crystal decreases significantly depending on the area ratio of the grooved area to the non-grooved area in the seed crystal, there is a concern that the presence of micropipe defects in the single crystal caused by micropipe defects in the non-grooved areas may be significant enough to affect the yield.

[0005] This invention has been made in view of the circumstances illustrated above. Specifically, this invention provides a technique for reducing micropipe defects in silicon carbide single crystals obtained by crystal growth from seed crystals at a lower cost and with better results. [Means for solving the problem]

[0006] The method for producing silicon carbide single crystals according to claim 1 is: The process involves sublimating a powdered solid raw material (4) and recrystallizing it on a growth surface (52), which is one surface of a seed crystal (5), thereby growing a growth crystal (6) on the growth surface. A strained layer (54), which is a processed altered layer formed on the growth surface of the seed crystal by grinding flattening using a grinding wheel, is formed. death, The formation of the strain layer involves selectively creating the strain layer in regions where micropipe defects (MPs) exist. . Claim 2 The method for producing silicon carbide single crystals as described. teeth, The process involves sublimating a powdered solid raw material (4) and recrystallizing it on a growth surface (52), which is one surface of a seed crystal (5), thereby growing a growth crystal (6) on the growth surface. When the outer diameter of the seed crystal is D, in the outer peripheral region (501), which is the area in the range of (D-150mm) / 2 from the outer edge (502), an inclined surface (521) intersecting the central axis (L) of the seed crystal is formed on the growth surface of the seed crystal by grinding flattening using a grinding wheel, thereby forming a strained layer (54), which is a processed altered layer, on the inclined surface.

[0007] In addition, each element in the application documents may be denoted by a reference numeral in parentheses. In this case, the reference numeral is merely an example of the correspondence between the element and the specific configuration described in the embodiments below. Therefore, the present invention is not limited in any way by the notation of the reference numeral. [Brief explanation of the drawing]

[0008] [Figure 1] This is a conceptual diagram illustrating a portion of the wafer manufacturing process related to one embodiment of the present invention. [Figure 2] Figure 2 is a cross-sectional view showing the schematic configuration of an ingot manufacturing apparatus used in the production of ingots. [Figure 3] Figure 2 is a magnified cross-sectional view showing the growth of silicon carbide single crystals from a seed crystal in the ingot manufacturing apparatus shown. [Figure 4] This is a magnified cross-sectional view showing the growth of silicon carbide single crystals in the comparative example. [Figure 5] Figure 2 is a magnified cross-sectional view showing the growth of silicon carbide single crystals from a seed crystal in the ingot manufacturing apparatus shown. [Figure 6] Figure 2 is a magnified cross-sectional view showing the growth of silicon carbide single crystals from a seed crystal in the ingot manufacturing apparatus shown. [Figure 7] Figure 2 is a magnified cross-sectional view showing the growth of silicon carbide single crystals from a seed crystal in the ingot manufacturing apparatus shown. [Figure 8] Figure 2 is a magnified cross-sectional view showing the growth of silicon carbide single crystals from a seed crystal in the ingot manufacturing apparatus shown. [Figure 9] This is a cross-sectional view illustrating the general process for obtaining a silicon carbide single crystal with an outer diameter of 200 mm from a primary seed crystal with an outer diameter of 150 mm. [Modes for carrying out the invention]

[0009] (Embodiment) Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that various modifications applicable to a single embodiment may hinder understanding of that embodiment if they are inserted in the middle of the series of descriptions of that embodiment. Therefore, modifications will not be inserted in the middle of the series of descriptions of the embodiment, but will be described collectively afterward.

[0010] (Ingots and wafers) As shown in FIG. 1, an ingot 1 made of a single crystal of silicon carbide is formed in a substantially cylindrical shape surrounding a central axis L. The top surface 1a of the ingot 1 is polished into a flat planar shape orthogonal to the central axis L, and sliced at a slice surface 1b at a position of a predetermined depth from the top surface 1a using a well-known wafer slicing method such as wire slicing or laser slicing, whereby a wafer 2 is obtained. The wafer 2 according to the present embodiment, having an outer diameter of 200 mm (i.e., 8 inches), is formed such that the density of micropipe defects MP (see FIG. 3 etc.) is equal to or less than that in the outer region 2b than in the central region 2a having an outer diameter of 150 mm (i.e., 6 inches) centered on the central axis L. That is, for the wafer 2, when the density of micropipe defects MP in the central region 2a is P1 and the density of micropipe defects MP in the outer region 2b thereof is P2, it is formed such that P1≧P2. For the sake of simplicity of illustration and description, the so-called orientation flat is omitted from illustration and description in this specification.

[0011] The wafer 2 obtained by wafer slicing is subjected to a semiconductor device manufacturing process after undergoing processes of grinding and polishing the surface. Grinding with a grindstone can be used for grinding the surface of the wafer 2. Grinding with a grindstone or CMP can be used for polishing the surface of the wafer 2. CMP is an abbreviation for Chemical Mechanical Polishing.

[0012] (Ingot Manufacturing) Ingot 1 is manufactured by the ingot manufacturing apparatus 3 shown in Figure 2. As shown in Figure 2, the ingot manufacturing apparatus 3 is configured to manufacture ingot 1 by a so-called modified Rayleigh process, in which a growth crystal 6 is grown on a seed crystal 5, which is a silicon carbide single crystal substrate, using a solid raw material 4, which is silicon carbide powder, as a source of sublimation gas, and a seed crystal 5, which is a silicon carbide single crystal substrate, as the destination for the sublimation gas. Specifically, the ingot manufacturing apparatus 3 comprises a heating device 31 and a crucible 32. The heating device 31 is a cylindrical induction coil, which is provided to surround the outer circumference of the graphite crucible 32. The crucible 32 comprises a bottomed cylindrical body 33 with one end in the axial direction, i.e., the lower end, closed, and a lid 34 that opens and closes the opening at the other end in the axial direction, i.e., the upper end, of the body 33. Powdered solid raw material 4 is contained in the bottom of the inner space of the body 33. The seed crystal 5 is formed in a roughly disc shape. The seed crystal 5 is fixed to the lid portion 34 via an adhesive (not shown) at a fixed surface 51, which is one end face (i.e., the upper end face) in the thickness direction or axial direction. That is, the growth surface 52, which is the other end face (i.e., the lower end face) of the seed crystal 5 in the thickness direction or axial direction, is exposed to the inner space of the main body portion 33 that contains the powdered solid raw material 4.

[0013] Referring to Fig. 3, the growth surface 52 of the seed crystal 5 is provided as a planar surface with the central axis L as the normal. Also, the growth surface 52 is provided as a so-called "off-plane" or "off-angle plane" that is inclined at a predetermined off-angle θ with respect to the basal plane 53 which is the c-plane, i.e., the {0001} plane. That is, the seed crystal 5 is formed as a 4H-SiC substrate having a predetermined off-angle θ. And the ingot manufacturing apparatus 3 is configured to grow the growth crystal 6 on the growth surface 52 in a so-called c-plane growth. For the sake of simplicity of illustration, in Fig. 3, only one of the numerous basal planes 53 is shown, and the others are omitted from illustration. The off-angle θ is preferably 4 degrees or more, for example, 4 degrees, 6 degrees, or 8 degrees. For the convenience of the following description, in Fig. 3, an XYZ three-dimensional coordinate system is set such that the X-axis direction is parallel to the off-direction and the Z-axis direction is parallel to the central axis L. The "off-direction" is the direction indicating the orientation in which the crystal axis of the silicon carbide single crystal constituting the seed crystal 5 is tilted. Also, any direction parallel to the XY plane in the figure is referred to as the "in-plane direction". The "in-plane direction" includes the "off-direction" and the "radial direction". The "radial direction" is the direction extending radially from the central axis L in a virtual plane parallel to the XY plane in the figure (i.e., orthogonal to the central axis L). In other words, the "radial direction" is the radial direction of a virtual circle drawn in the same virtual plane with the intersection of the above virtual plane and the central axis L as the center.

[0014] In the method for manufacturing a silicon carbide single crystal, i.e., the ingot 1 according to the present embodiment, the powdery solid raw material 4 is sublimated and recrystallized on the growth surface 52 of the seed crystal 5, thereby growing the growth crystal 6 on the growth surface 52. And in the present embodiment, a strain layer 54 which is a processed altered layer flattened by a grindstone is formed on the growth surface 52 of the seed crystal 5 using a grindstone. Specifically, although it depends on the processing apparatus and processing conditions, for example, when a diamond grindstone of No. 30000 is used, the surface roughness Ra of the strain layer 54 exceeds 1 nm. Or, for example, when a diamond grindstone of No. 2000 is used, the surface roughness Ra of the strain layer 54 exceeds 10 nm. Or, for example, when a diamond grindstone of No. 600 is used, the surface roughness Ra of the strain layer 54 exceeds 100 nm.

[0015] As described in the prior application by the applicant of this application, Japanese Patent Publication No. 2012-72034, etc., by converting threading dislocations into stacking faults SF (see, for example, Figure 3) during the crystal growth process, the transfer of threading dislocations in the seed crystal 5 to the grown crystal 6 can be effectively avoided. This effect can be achieved more effectively by increasing the off-angle θ (for example, to 4 degrees or more). This makes it possible to grow high-quality silicon carbide single crystals with extremely reduced crystal defects. In this regard, micropipe defects MP are a type of threading dislocation along with helical dislocations, but they have greater strain than helical dislocations, and it is difficult to convert almost all of the micropipe defects MP into stacking faults SF in the conventional method of partially introducing stacking faults SF into the seed crystal 5. Therefore, the inventors discovered that, instead of treating the growth surface 52, which is the surface of the seed crystal 5, to an extremely smooth surface by CMP in order to maintain crystal quality, by deliberately providing a strain layer 54, which is a processed altered layer with relatively large strain, on the growth surface 52, it is possible to convert almost all of the micropipe defects MP into stacking faults SF and "sweep them out" along the off-angle direction.

[0016] Figure 3 shows the crystal growth process according to the manufacturing method of this embodiment, and Figure 4 shows the crystal growth process when a strain layer 54 is not provided on the growth surface 52 as a comparative example. When a strain layer 54 is not provided on the growth surface 52, as shown in Figure 4, micropipe defects MP are carried over directly to the grown crystal 6. In contrast, according to this embodiment, as shown in Figure 3, micropipe defects MP are converted into stacking faults SF by the strain region 61 which has a large strain due to the strain layer 54, and are swept out to the downstream side in the off direction. As a result, in the low-strain region 62 below the strain region 61, an extremely high-quality silicon carbide single crystal is obtained in which there are no micropipe defects MP, or almost no micropipe defects MP. For the sake of simplicity in illustration, in Figure 3, only those stacking faults SF that are converted into micropipe defects MP from the numerous stacking faults SF that occur in the strain region 61 are shown, and the others are omitted from the illustration.

[0017] As described above, in this embodiment, by making the growth surface 52, which is one surface of the seed crystal 5, a grinding wheel planarized surface having a processed altered layer, micropipe defects MP can be effectively reduced. Therefore, according to this embodiment, it is possible to effectively reduce micropipe defects MP in silicon carbide single crystals obtained by crystal growth from seed crystal 5 at a lower cost.

[0018] Figure 3 shows a case where micropipe defects MP are present over a wide area in the in-plane direction in the seed crystal 5. Figure 5 shows a case where micropipe defects MP are concentrated in the central part in the radial direction in the seed crystal 5. In these cases, it is preferable that the strain layer 54 be provided over almost the entire in-plane surface of the growth surface 52.

[0019] Recent advances in crystal growth technology have made it possible to use seed crystals 5 with extremely few micropipe defects MP. Therefore, as shown in Figure 6, micropipe defects MP may be localized at one end of the growth surface 52 in the in-plane direction. In this case, the strain layer 54 does not need to be provided over almost the entire in-plane surface of the growth surface 52. That is, in this case, the strain layer 54 only needs to be provided in the region of the growth surface 52 where micropipe defects MP exist.

[0020] Figures 3 to 6 show examples where the off-angle θ is relatively large (e.g., 8 degrees). On the other hand, Figure 7 shows an example where the off-angle θ is relatively small (e.g., 4 degrees), and micropipe defects MP are unevenly distributed in the outer peripheral region 501 in the radial direction of the seed crystal 5. The outer peripheral region 501 is the region near the outer edge 502 in the radial direction of the seed crystal 5, that is, a region of a predetermined width radially from the outer edge 502. In this case, in the outer peripheral region 501 where micropipe defects MP exist, it is preferable to form an inclined surface 521 intersecting the central axis L on the growth surface 52 by grinding, thereby providing a strain layer 54 on this inclined surface 521. This allows for a larger angle with the base surface 53, i.e., the apparent off-angle θt. This makes it possible to effectively convert the micropipe defects MP into stacking faults SF and "sweep them out".

[0021] Figure 7 shows the case where micropipe defects MP are predominantly located on one side in the off-direction. In this case, the inclined surface 521 is formed in a planar shape with its normal inclined with respect to the central axis L. On the other hand, Figure 8 shows the case where micropipe defects MP are scattered on the outer side in the radial direction. In this case, the inclined surface 521 is formed in a tapered shape, or a partially conical shape.

[0022] As shown in Figure 9, for example, it is possible to enlarge an ingot 1 with an outer diameter of 200 mm (i.e., 8 inches) from a primary seed crystal 591 with an outer diameter of 150 mm (i.e., 6 inches) through one or more growth stages. Figure 9 shows an example of a three-stage growth process in which a secondary seed crystal 592 is obtained by crystal growth from a primary seed crystal 591 with an outer diameter of 150 mm, and a grown crystal with an outer diameter of 200 mm is obtained from this secondary seed crystal 592. Specifically, first, a primary grown crystal 691 is grown from a primary seed crystal 591 with an outer diameter of 150 mm using a conventional crystal growth method that does not involve strain layer formation, thereby increasing the diameter and obtaining a secondary seed crystal 592 from this primary grown crystal 691. Next, a secondary grown crystal 692 is similarly grown from this secondary seed crystal 592, increasing the diameter and obtaining a seed crystal 5 from this secondary grown crystal 692. Then, by forming a strain layer 54 on the seed crystal 5 obtained in this way and growing a growth crystal 6, it becomes possible to obtain an ingot 1 in which micropipe defects MP are well reduced. In this case, when the outer diameter of the seed crystal 5 is D, in the outer peripheral region 501, which is the region in the range of (D-150mm) / 2 from the outer edge 502, micropipe defects MP are unevenly distributed as shown in the example in Figure 8, due to the generation of micropipe defects MP from the crystal side surface as the crystal expands from the primary seed crystal 591 to the primary growth crystal 691 and from the secondary seed crystal 592 to the secondary growth crystal 692. However, by providing a strain layer 54 in this outer peripheral region 501, it becomes possible to effectively convert the micropipe defects MP unevenly distributed in the outer peripheral region 501 into stacking faults SF and "sweep them out" radially. This region corresponds to the region 25 mm radially from the outer edge when the outer diameter is expanded from 150 mm to 200 mm.

[0023] In the silicon carbide single crystal manufacturing method according to the embodiment described above, by using a seed crystal 5 with an outer diameter of 200 mm or more, a silicon carbide single crystal with a relatively large diameter and few micropipe defects MP can be obtained, enabling the production of many chips for various devices and resulting in a cost-effective solution. Furthermore, according to the manufacturing method according to the embodiment described above, micropipe defects MP can be swept to the outer circumference, thus reducing the density of micropipe defects MP to 0.05 / cm³. 2The density can be reduced to the following level. This results in a higher yield, enabling the acquisition of many chips for various devices, and achieving a cost-effective solution. Furthermore, the density of micropipe defects (MPs) can be reduced to 0.01 / cm³. 2 By reducing the level to the following extent, it becomes possible to obtain a higher yield and more chips for devices, resulting in extremely high cost efficiency. Methods for measuring micropipe defects (MPs) include, for example, counting the black dots corresponding to micropipe defects (MPs) by taking X-ray topographic photographs and dividing by the wafer area, or counting the pits corresponding to micropipe defects (MPs) by KOH (potassium hydroxide) etching and dividing by the wafer area, but are not limited to these methods.

[0024] (modified version) The present invention is not limited to the embodiments described above. Therefore, the embodiments can be modified as appropriate. Representative modifications are described below. In the following description of modifications, the differences from the embodiments will be mainly described. In addition, parts that are the same or equivalent to each other in the embodiments and modifications are denoted by the same reference numerals. Therefore, in the following description of modifications, with respect to components that have the same reference numerals as in the embodiments, the descriptions in the embodiments can be appropriately applied unless there is a technical inconsistency or additional explanation is required.

[0025] The present invention is not limited to the specific apparatus configuration shown in the above embodiments. That is, for example, the ingot manufacturing apparatus 3 is not limited to the configuration shown in Figure 2. In other words, Figure 2 is a simplified representation to illustrate the schematic configuration and function of the ingot manufacturing apparatus 3 to which the present invention may be applied, and does not necessarily correspond to the specific apparatus configuration actually manufactured and sold.

[0026] The off-angle θ can be set appropriately within a range in which crystal growth and reduction of crystal defects in the growing crystal 6 are well achieved. That is, for example, an off-angle θ of 4 degrees or more is preferable, and a relatively large off-angle, specifically 6 degrees or 8 degrees, can be set to enhance the sweeping effect of micropipe defects MP. However, even if the off-angle is formed to exceed 30 degrees, the sweeping effect of micropipe defects MP does not improve, so it is preferable that it be 30 degrees or less.

[0027] There are no particular limitations on the surface roughness Ra of the strain layer 54, nor on the grit size and material of the grinding wheel layer used to achieve it. In other words, the surface roughness Ra of the strain layer 54, and the grit size and material of the grinding wheel layer can be appropriately selected within a range in which the effects of the present invention can be well achieved. In other words, the strain layer 54 can be formed on a so-called planar grinding surface, a finish grinding surface, or a polished surface that is flatter than these. Specifically, for example, the larger the surface roughness Ra of the strain layer 54, the more stacking faults SF are introduced into the strain region 61, thereby effectively sweeping out micropipe defects MP. On the other hand, if the surface roughness Ra of the strain layer 54 is too small, there is a higher possibility that micropipe defects MP will not be converted by stacking faults SF and will propagate along the c-axis within the growing crystal 6. Therefore, it is preferable for the surface roughness Ra of the strain layer 54 to exceed 1 nm, more preferably exceeding 10 nm, and even more preferably exceeding 100 nm. However, forming a strained layer with excessively high surface roughness (for example, exceeding 1000 nm) is undesirable because it significantly increases crystal defects, and some of the generated micropipes remain unconverted, resulting in an increase in micropipes. Furthermore, surface roughness Ra of 10 nm or less is measured using non-contact instruments such as ZYGO's laser interferometer, while Ra exceeding 10 nm is measured using stylus-contact instruments such as TAYLOR-HOBSON's, although it is not limited to these.

[0028] It goes without saying that the elements constituting the above embodiments are not necessarily essential unless explicitly stated as particularly essential or considered fundamentally essential. Furthermore, when numerical values ​​such as the number, quantity, or range of components are mentioned, the present invention is not limited to those specific numerical values ​​unless explicitly stated as particularly essential or considered fundamentally limited to those specific numerical values. Similarly, when the shape, direction, positional relationship, etc., of components are mentioned, the present invention is not limited to those shape, direction, positional relationship, etc., unless explicitly stated as particularly essential or considered fundamentally limited to those specific shape, direction, positional relationship, etc.

[0029] Modifications are not limited to the examples given above. That is, for example, multiple embodiments other than those exemplified above can be combined with each other as long as they do not conflict technically. Similarly, multiple modifications can be combined with each other as long as they do not conflict technically. Also, the outer diameters of 150 mm and 200 mm are values ​​that take into account the standards and tolerances that are usually set. [Explanation of Symbols]

[0030] 1 ingot 2 wafers 4. Powdered solid raw materials 5 seed crystals 52 Growth surface 53 Basal plane 54 Strain layer 6 Growth Crystals θ Off-angle MP Micropipe Defect

Claims

1. In a method for producing a silicon carbide single crystal, a powdered solid raw material (4) is sublimated and recrystallized on a growth surface (52), which is one surface of a seed crystal (5), thereby growing a growth crystal (6) on the growth surface, A strained layer (54), which is a processed and altered layer formed on the growth surface of the seed crystal by grinding and flattening using a grinding wheel, is formed. The formation of the strain layer involves selectively providing the strain layer in regions where micropipe defects (MPs) exist. A method for producing silicon carbide single crystals.

2. A method for producing a silicon carbide single crystal, comprising sublimating a powdered solid raw material (4) and recrystallizing it on a growth surface (52) which is one surface of a seed crystal (5), thereby growing a growth crystal (6) on the growth surface, When the outer diameter of the seed crystal is D, in the outer peripheral region (501), which is the area in the range of (D - 150 mm) / 2 from the outer edge (502), an inclined surface (521) intersecting the central axis (L) of the seed crystal is formed on the growth surface of the seed crystal by grinding flattening using a grinding wheel, thereby forming a strained layer (54), which is a processed altered layer, on the inclined surface. A method for producing silicon carbide single crystals.

3. The seed crystal forming the strain layer has an off-angle (θ) of 4 degrees or more. A method for producing silicon carbide single crystals according to claim 1 or 2.

4. The surface roughness Ra of the strained layer is greater than 1 nm. A method for producing silicon carbide single crystals according to claim 1 or 2.

5. The surface roughness Ra of the strained layer is greater than 10 nm. A method for producing silicon carbide single crystals according to claim 1 or 2.

6. The surface roughness Ra of the strained layer is greater than 100 nm. A method for producing silicon carbide single crystals according to claim 1 or 2.

7. The outer diameter of the seed crystal is 200 mm or more. A method for producing silicon carbide single crystals according to claim 1 or 2.

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