Method and apparatus for processing substrates

Abstract

Provided herein are methods and apparatus for processing a first substrate and a second substrate. For example, a method for processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of the first substrate and toward a second surface of a second substrate different from the first substrate, determining in situ ESE data from each of the first and second surfaces during processing of the first and second substrates, measuring phase and amplitude changes in the determined in situ ESE data, and simultaneously using complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in situ ESE data to determine one or more parameters of the first surface of the first substrate and the second surface of the second substrate.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to methods and apparatuses for processing substrates. More particularly, embodiments of the present disclosure relate to the evaluation of surface / interface characteristics of semiconductor substrate processes.

Background Art

[0002]

[0002] The manufacture of a substrate (wafer) can include one or more processes. For example, the manufacture of a substrate can include one or more deposition processes (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc.), one or more bonding processes, one or more cleaning processes, one or more etching processes (e.g., wet etching, dry etching, etc.), and one or more polishing processes (e.g., chemical mechanical polishing (CMP) or other suitable polishing processes). Conventional methods and apparatuses are configured for surface / interface characteristic evaluation to detect the cleanliness of the target surface. However, such methods and apparatuses are typically configured to perform surface / interface characteristic evaluation at the end (completion) of each process and can be very destructive to the target surface.

Summary of the Invention

[0003]

[0003] The Spectrum provides methods and apparatus for processing substrates. In some embodiments, a method for processing a substrate includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and toward a second surface of a second substrate distinct from the first substrate; determining in-situ ESE data from each of the first and second surfaces during processing of the first and second substrates; measuring changes in phase and amplitude within the determined in-situ ESE data; and determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate using a complex dielectric function, optical conductivity, and electron correlation simultaneously from the measured changes in phase and amplitude of the in-situ ESE data.

[0004]

[0004] According to at least some embodiments, a non-temporary computer-readable storage medium stores instructions that, when executed by a processor, perform a method for processing a substrate using extended spectroscopic polarization analysis (ESE). The method for processing a substrate includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and toward a second surface of a second substrate distinct from the first substrate; determining in-site ESE data from each of the first and second surfaces during processing of the first and second substrates; measuring changes in phase and amplitude within the determined in-site ESE data; and determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate using a complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in-site ESE data.

[0005]

[0005] According to at least some embodiments, an apparatus for processing substrates comprises a processing platform for processing substrates, and an extended spectroscopic ellipsometer operably connected to the processing platform, configured to direct a beam from the extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate distinct from the first substrate, to determine insite ESE data from each of the first and second surfaces during processing of the first and second substrates, to measure changes in phase and amplitude within the determined insite ESE data, and to determine one or more parameters of the first surface of the first substrate and the second surface of the second substrate using complex dielectric functions, optical conductivity, and electron correlations simultaneously from the measured changes in phase and amplitude of the insite ESE data.

[0006]

[0006] Other embodiments and further embodiments of the present disclosure are described below.

[0007]

[0007] Embodiments of the present disclosure, which are briefly summarized above and described in more detail below, can be understood by referring to exemplary embodiments of the present disclosure shown in the accompanying drawings. However, since the present disclosure may allow for other equally valid embodiments, the accompanying drawings show only typical embodiments of the present disclosure and should therefore not be considered limiting. [Brief explanation of the drawing]

[0008] [Figure 1]

[0008] This is a flowchart of a method for processing a substrate according to at least some embodiments of the present disclosure. [Figure 2]

[0009] This is a diagram of an apparatus according to at least some embodiments of the present disclosure. [Figure 3]

[0010] This is a sequence diagram of the method shown in Figure 1, according to at least some embodiments of the present disclosure. [Modes for carrying out the invention]

[0009]

[0011] For ease of understanding, the same reference numerals have been used to indicate identical elements common to the figures, where possible. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be usefully incorporated into other embodiments without further description.

[0010]

[0012] This specification provides embodiments of methods and apparatus. For example, the methods and apparatus of this disclosure relate to the characterization of semiconductor substrate processes. For example, in at least some embodiments, the methods and apparatus of this specification are configured to perform extended spectroscopic polarization analysis (ESE) in real time during one or more substrate manufacturing processes such as PVD, CVD, cleaning, wet / dry etching, polishing processes (e.g., chemical mechanical polishing processes), and bonding (e.g., hybrid bonding). For example, the methods and apparatus of this specification may provide real-time measurements of surface / interface cleanliness using complex dielectric function, photoconductivity, and electron correlation measured by ESE simultaneously. Complex dielectric function, optical conductivity, and electron correlation can be used to investigate various surface conditions related to hybrid bonding, such as the presence or absence of contaminants, contact angles of about 0 to 70°, bonding states such as -OH, -ON, and material composition such as about 10% to about 30% SiCN. The methods and apparatus described herein, when using ESE to monitor one or more surfaces in real time during one or more of the aforementioned substrate manufacturing processes, as opposed to at the end of the substrate manufacturing process, significantly reduce, if not eliminate, damage to the target surface.

[0011]

[0013] Figure 1 is a flowchart of method 100 for processing a substrate according to at least some embodiments of the present disclosure, and Figure 2 is a tool 200 (or apparatus) that can be used to perform method 100.

[0012]

[0014] Method 100 may be carried out within a tool 200 including any suitable processing chamber configured for one or more of the following: a pre-cleaning chamber, a wet etching of a dry etching chamber, bonding (e.g., hybrid bonding or other bonding processes), or a CMP chamber, including physical vapor deposition (PVD), chemical vapor deposition (CVD), e.g., plasma CVD (PECVD), and / or atomic layer deposition (ALD), e.g., plasma ALD (PEALD) or thermal ALD (e.g., without plasma formation). An exemplary processing system that can be used to carry out the method of the present invention disclosed herein is commercially available from Applied Materials, Inc. in Santa Clara, California. Other processing chambers, including processing chambers available from other manufacturers, may also be appropriately used in connection with the teachings presented herein.

[0013]

[0015] Tool 200 may be provided in a standalone configuration or may be embodied in a separate processing chamber, which may be provided as part of a cluster tool (e.g., the integrated tool described below with respect to Figure 2). An example of an integrated tool is available from Applied Materials, Inc. in Santa Clara, California. The methods described herein may be carried out using or within other suitable processing chambers, which may be coupled with other cluster tools having suitable processing chambers. For example, in some embodiments, the methods of the present invention may be carried out within an integrated tool such that vacuum / time interruptions between processing steps are limited or nonexistent. For example, reduced vacuum / time interruptions may limit or prevent contamination, oxidation, and surface termination changes of the associated bonding material (e.g., oxides, nitrides, silicon carbonitride (SiCN), copper (Cu)).

[0014]

[0016] The integrated tool includes a processing platform 201 (vacuum airtight processing platform), a factory interface 204, and a controller 202. The processing platform 201 comprises multiple processing chambers, such as processing chambers 214A, 214B, 214C, and 214D, which are operably connected to the transfer chamber 203 (vacuum substrate transfer chamber). The factory interface 204 is operably connected to the transfer chamber 203 by one or more load lock chambers (two load lock chambers, such as load lock chambers 206A and 206B shown in Figure 2).

[0015]

[0017] In some embodiments, the factory interface 204 comprises a docking station 207 and a factory interface robot 238 for facilitating the transfer of one or more semiconductor substrates (wafers or tape frames). The docking station 207 is configured to receive one or more forward-opening unified pods (FOUPs) or tape frame cassettes. In the embodiment of Figure 2, four FOUPs are shown, such as FOUPs 205A, 205B, 205C, and 205D. The factory interface robot 238 is configured to transfer substrates from the factory interface 204 to the processing platform 201 through load lock chambers such as load lock chambers 206A and 206B. Each of the load lock chambers 206A and 206B has a first port connected to the factory interface 204 and a second port connected to the transfer chamber 203. Chambers 206A and 206B are connected to a pressure control system (not shown) that pumps down and evacuates the load lock chambers 206A and 206B to facilitate the passage of substrates between the vacuum environment of the transfer chamber 203 and the substantially ambient (e.g., atmospheric) environment of the factory interface 204. The transfer chamber 203 has a vacuum robot 242 positioned within it. The vacuum robot 242 can transfer substrates 221 between the load lock chambers 206A and 206B and the processing chambers 214A, 214B, 214C, and 214D.

[0016]

[0018] In some embodiments, processing chambers 214A, 214B, 214C, and 214D are connected to a transfer chamber 203. Processing chambers 214A, 214B, 214C, and 214D include at least an ALD chamber, a CVD chamber, a PVD chamber, an electron beam deposition chamber, an electroplating chamber, an electroless (EEP) deposition chamber, a pre-cleaning chamber (e.g., a spin-cleaning and drying chamber), a wet etching chamber, a dry etching chamber, a UV chamber, a bonder (pick-and-flip process), and / or other chambers suitable for performing the methods described herein.

[0017]

[0019] In some embodiments, one or more optional service chambers (indicated as 216A and 216B) may be connected to the transfer chamber 203. Service chambers 216A and 216B may be configured to perform other substrate processes such as degassing and / or annealing (e.g., furnace, microwave heating), bonding (pick-and-flip process), chemical mechanical polishing (CMP), wafer cleaving, etching, plasma dicing, orientation, substrate measurement, and cool-down.

[0018]

[0020] In at least some embodiments, the extended spectroscopic ellipsometer 250 is operably connected to the processing platform 201. For example, the extended spectroscopic ellipsometer 250 can be connected to one or more of the processing chambers 214A, 214B, 214C, and 214D, and / or to one or both of the service chambers 216A and 216B. For illustrative purposes, the extended spectroscopic ellipsometer 250 is shown operably connected to processing chambers 214A and 214D, and chamber 216A. For example, in at least some embodiments, the swing arms (not shown) of processing chambers 214A, 214B, 214C, and 214D, and / or one or both of chambers 216A and 216B can be configured to support the extended spectroscopic ellipsometer 250. In at least some embodiments, the extended spectroscopic ellipsometer 250 can be connected to the factory interface 204, for example, for measurement / inspection.

[0019]

[0021] Under the control of the controller 202, the extended spectroscopic ellipsometer 250 is configured to perform extended spectroscopic polarization analysis (ESE). For example, in at least some embodiments, the extended spectroscopic ellipsometer 250 is configured to direct a beam toward the surface of a substrate to determine insite data during substrate processing (e.g., performing one or more of the processes described above). In at least some embodiments, the extended spectroscopic ellipsometer 250 is configured to measure changes in the determined insite data and simultaneously use complex dielectric functions, optical conductivity, and electron correlations measured from changes in the phase and amplitude of the insite extended spectroscopic polarization analysis (ESE) data (insite ESE data) to determine various aspects of the substrate surface, as will be described in more detail below.

[0020]

[0022] The controller 202 controls the operation of the tool 200 by using direct control of the processing chambers 214A, 214B, 214C, and 214D, or alternatively, by controlling the computer (or controller) associated with the processing chambers 214A, 214B, 214C, and 214D and the tool 200. During operation, the controller 202 enables data collection and feedback from each chamber and system to optimize the performance of the tool 200. The controller 202 generally includes a central processing unit 230, memory 234, and support circuitry 232. The central processing unit 230 can be any form of general-purpose computer processor available for use in industrial settings. The support circuitry 232 is conventionally connected to the central processing unit 230 and may include a cache, clock circuitry, input / output subsystems, power supply, etc. The software routines, such as the processing methods described above, may be stored in memory 234 (for example, a non-temporary computer-readable storage medium containing instructions), and when executed by the central processing unit 230, they transfer the central processing unit 230 to the controller 202 (a special-purpose computer). The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the tool 200.

[0021]

[0023] Continuing to refer to Figure 1, Method 100 uses ESE to characterize the surface / interface cleanliness (e.g., endpoint sensing) of one or more surfaces of the substrate. For example, as described above, the inventors have found that complex dielectric functions, photoconductivity, and electron correlation can be used to investigate various surface conditions related to hybrid bonding, such as the presence or absence of contaminants, contact angles from about 0 to about 70°, bonding states such as -OH, -ON, etc., and material composition such as about 10% to about 30% SiCN. The surface conditions are used to determine the bonding strength (e.g., about 0.5 to about 2 J / m²). 2Since it can be directly correlated with the downstream reliability performance as shown in ), it provides a great advantage from the perspectives of device performance and yield. For example, performance and yield can be identified early before the substrate is completed as a device, in contrast to the conventional method of testing performance and yield after assembly (packaging). For example, the controller 202 uses ellipsometry raw data (e.g., Ψ (amplitude) and Δ (phase)) to extract the dielectric functions of the materials (e.g., ε1 and ε2) and the following equations (1) to (3). ρ≡tanΨexp(iΔ)≡r p / r s .....,(1) ε1=n 2 -k 2 .....,(2) and ε2=2nk.....(3) Regarding hybrid bonding, the dielectric surface characteristics can be an important indicator for achieving high bonding strength. In ellipsometry, the ratio of the amplitude (Ψ) to the phase difference (Δ) is directly related to the complex dielectric function (ε = ε1 + iε2). This direct relationship is clear in Equation (1), and the two ellipsometric parameters (Ψ, Δ) correspond to the ratio between the p-polarization reflectance (r p ) and the s-polarization reflectance (r s ). The reflectance depends on the refractive index (n) and the extinction coefficient (k) of the material, and the relationships between these two parameters and the complex dielectric function are shown in Equations (2) and (3).

[0022]

[0024] First, one or more substrates are loaded into one or more of four FOUPs 205A, 205B, 205C, and 205D. For example, in at least some embodiments, the upper substrate 301 and the bottom substrate 303 can be loaded into FOUP 205A. The upper substrate 301 and the bottom substrate 303 can be made of one or more suitable materials. For example, the upper substrate 301 and the bottom substrate 303 can be made of Cu embedded in either silicon carbonitride (SiCN) or silicon dioxide (SiO2). For example, in at least some embodiments, the upper substrate 301 is a component tape frame wafer made of silicon carbonitride (SiCN), and the bottom substrate 303 can be made of silicon dioxide (SiO2). One or more dies 305 (e.g., a plurality of dies 305) can be disposed on the upper surface of the upper substrate 301.

[0023] [[ID=४]]

[0025] Next, in at least some embodiments, an optional cleaning process can be performed on the upper substrate 301 and the bottom substrate 303. For example, in at least some embodiments, the upper substrate and the bottom substrate can be transferred from FOUP 205A through one of the load lock chambers 206A and 206B to one of the service chambers 216A and 216B (e.g., service chamber 216A). In at least some embodiments, the method 100 includes a cleaning process (wet cleaning and spin drying) that includes performing a wet cleaning and spin drying process (see 300 in FIG. 3) on the upper substrate 301 and the bottom substrate 303. The cleaning process shown at 300 can include using at least one of an acid, a base, a solvent, or deionized water. For example, in at least some embodiments, an acid, a base, and / or a solvent can be used when a thorough / rough cleaning of the substrate is required.

[0024]

[0026] Next, an optional degassing process (see 302 in Figure 3) may be performed on one or more substrates. For example, in at least some embodiments, the upper substrate 301 and the bottom substrate 303 may be transferred from service chamber 216A to service chamber 216B. To reduce costs and improve throughput, multiple upper and bottom substrates may be processed together during the degassing process 302.

[0025]

[0027] Next, the upper substrate 301 and the bottom substrate 303 are transferred to the processing chamber 214A, where one or more plasma and cleaning processes may be performed on the upper substrate 301 and the bottom substrate 303. In at least some embodiments, the processing chamber 214A may be configured to perform one or more plasma processes and / or cleaning processes (see 304 in Figure 3) for activating and / or cleaning (e.g., wet cleaning and spin drying) the upper substrate 301 and the bottom substrate 303. The cleaning process shown in 304 may include the use of at least one of an acid, a base, a solvent, or deionized water. For example, if gentle / mild cleaning of the substrate is required, in at least some embodiments, deionized water (DI water) may be used.

[0026]

[0028] Next, in 102, method 100 includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate different from the first substrate. For example, in 102, under the control of controller 202, the extended spectroscopic ellipsometer 250 is configured to direct a beam toward the upper surface of the upper substrate 301 and the upper surface of the bottom substrate 303.

[0027]

[0029] Next, in 104, method 100 includes determining the phase (Δ) and amplitude (Ψ) of the incident ESE data, for example, the beam (or reflected beam) from each of the first and second surfaces during processing of the first and second substrates. For example, in at least some embodiments, the extended spectroscopic ellipsometer 250 can direct the beam at one or more suitable angles to detect a particular surface state. The beam can be directed with respect to the upper surface of the upper substrate 301 and the upper surface of the bottom substrate 303 at an incident angle (angle of incidence) from about 0 to about 80°. For example, in at least some embodiments, the angle of incidence may be from about 20° to about 80°. In at least some embodiments, the angle of incidence may be from about 45° to about 50°. The photon energy of the beam may be from about 0.6 eV to about 10 eV. For example, in at least some embodiments, the photon energy of the beam may be from about 3.2 eV to about 6 eV, and in at least some embodiments, it may be about 3.3 eV.

[0028]

[0030] Next, method 100 includes measuring changes in the determined in-situ ESE data. For example, in 106, method 100 includes measuring changes in the phase and amplitude of the determined in-situ ESE data. For example, in at least some embodiments, in 106, the controller 202 can measure changes in the phase (Δ) and amplitude (Ψ) of the reflected beam. For example, under the control of the controller 202, the controller 202 measures the phase and amplitude of the transmitted beam and measures changes in the phase and amplitude of the reflected beam detected by the extended spectroscopic ellipsometer 250.

[0029]

[0031] Next, in 108, the method includes determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate by simultaneously using the complex dielectric function, optical conductivity, and electron correlation from the changes in phase (Δ) and amplitude (Ψ) measured from the in-site ESE data. For example, in at least some embodiments, the controller 202 uses the complex dielectric function, photoconductivity, and / or electron correlation obtained from the changes in the phase (Δ) and amplitude (Ψ) of the reflected beam to determine the presence or absence of contamination, hydrophilicity (contact angle), and various other surface conditions of the upper surface of the upper substrate 301 and the upper surface of the bottom substrate 303. For example, electron correlation can be used to obtain important information about surfaces, interfaces, and / or defects, each having rich physical properties. For example, even with the same dielectric, different surface treatments will result in different electron correlations and unique spectra of the complex dielectric function, which can be easily correlated with downstream coupling performance. For example, the imaginary part ε2 of the complex dielectric function is proportional to the light absorptivity and optical conductivity of the material. Changes in the complex dielectric function, where the real and imaginary parts are mutually dependent, can reflect differences in manufacturing conditions and / or material properties.

[0030]

[0032] Next, if the controller 202 determines that the surface state of either the upper surface of the upper substrate 301 or the upper surface of the bottom substrate 303 (which can be correlated with downstream coupling performance) is at an appropriate predetermined figure-of-merit (e.g., a specific value), the upper substrate 301 and the bottom substrate can be transferred to one or more of the processing chambers 214B-214D and / or service chambers 216A and 216B for further processing, as will be described in more detail below. Conversely, if the controller 202 determines that the surface state of the upper surface of the upper substrate 301 and the upper surface of the bottom substrate 303 has not reached an appropriate predetermined figure-of-merit, then additional processing (e.g., plasma and cleaning processing or another appropriate process) can be performed on the upper substrate 301 and the bottom substrate 303.

[0031]

[0033] For example, in at least some embodiments, additional processing, such as processing in a pre-cleaning chamber, may be required to remove the contaminants due to the persistence of a contaminant layer, and the ESE can be used again to monitor the contaminant layer during the pre-cleaning process until the contaminant layer is completely removed from the upper surface of the upper substrate 301 and the upper surface of the bottom substrate 303. In such embodiments, the vacuum robot 242 can transfer the upper substrate 301 and the bottom substrate 303 from processing chamber 214A to processing chamber 214D to perform a pre-cleaning process, such as removing one or more of the aforementioned contaminants. Thus, once transferred to processing chamber 214D, one or more pre-cleaning processes can be performed. For example, the pre-cleaning process may be any process suitable for facilitating the removal of any material from the upper surface of the upper substrate 301 and the upper surface of the bottom substrate 303, as described above. In at least some embodiments, the upper substrate 301 and the bottom substrate 303 may be exposed to fluorine-containing precursors and hydrogen-containing precursors in a two-part dry chemical cleaning process. In some embodiments, fluorine-containing precursors may include nitrogen trifluoride (NF3), hydrogen fluoride (HF), diatomic fluorine (F2), monatomic fluorine (F), fluorine-substituted hydrocarbons, and combinations thereof. In some embodiments, hydrogen-containing precursors may include atomic hydrogen (H), diatomic hydrogen (H2), ammonia (NH3), hydrocarbons, incomplete halogen-substituted hydrocarbons, and combinations thereof. In some embodiments, O2-based precursors may be used to remove organic contaminants and, in combination with a reducing (N2 / H2-based) precursor, to remove Cu oxides that may have been formed under prior O2 treatment.

[0032]

[0034] Continuing to refer to Figure 3, as described above, if the controller 202 determines that the surface condition of either the upper surface of the upper substrate 301 or the upper surface of the bottom substrate 303 is in an appropriate predetermined performance index, further processing of the upper substrate 301 and the bottom substrate 303 may be performed.

[0033]

[0035] For example, in at least some embodiments, method 100 may include performing an ultraviolet process to cure the first substrate after performing at least one of a plasma process or a cleaning process. In some embodiments, the ultraviolet process may also be performed before the plasma process or cleaning process. For example, the ultraviolet process may be performed on the upper substrate (see 306 in Figure 3). The ultraviolet light may be applied to the bottom surface of the upper substrate, but in some embodiments, it may be applied to the top surface of the upper substrate or both the top and bottom surfaces. In at least some embodiments, the ultraviolet process may also be used to cure the bottom substrate 303 (as well as the upper substrate 301). The ultraviolet process facilitates a bonding process, for example, removing the die from the top surface of the upper substrate 301.

[0034]

[0036] Next, in at least some embodiments, method 100 may include performing a coupling process after performing an ultraviolet process. For example, the coupling process may include picking up a die (e.g., die 305) from a first surface of a first substrate (e.g., the top surface of the upper substrate 301) and placing the die on a second surface of a second substrate (e.g., the top surface of the substrate of the bottom substrate 303). The coupling process may be performed as many times as there are dies present on the top surface of the upper substrate 301.

[0035]

[0037] Next, method 100 may include performing an annealing process after performing a coupling process. For example, an annealing process may be performed to anneal the bottom substrate 303 (see 310 in Figure 3) after all of the dies 305 have been placed on the top surface of the bottom substrate. The annealing process facilitates the fixation of the dies to the top surface of the bottom substrate 303. As described above, multiple bottom substrates may be processed together to reduce costs and improve throughput.

[0036]

[0038] Furthermore, the controller 202 may use the extended spectroscopic ellipsometer 250 during any of the processes that follow 102-108 before and / or after. For example, the extended spectroscopic ellipsometer 250 may be used during the washing process, degassing process, bonding process, ultraviolet process, and / or annealing process, as described herein.

[0037]

[0039] The above applies to embodiments of the present disclosure, but other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure.

Claims

1. A method for processing a first substrate and a second substrate using extended spectral polarization analysis (ESE), The beam from the extended ellipsometer is directed toward the first surface of the first substrate and toward the second surface of a second substrate different from the first substrate, During the processing of the first substrate and the second substrate, the insite ESE data is determined from each of the first surface and the second surface, Measuring the phase and amplitude changes within the determined in-situ ESE data, Using the complex dielectric function, optical conductivity, and electron correlation from the measured changes in the phase and amplitude of the in-site ESE data simultaneously, one or more parameters of the first surface of the first substrate and the second surface of the second substrate are determined. Includes, A method wherein the one or more parameters include at least one of the following: level of contamination, surface bonding state, contact angle, or material composition.

2. The method according to claim 1, wherein the incite ESE data includes changes in the phase and amplitude of the reflected beam.

3. The method according to claim 1, wherein directing the beam includes directing the beam toward the first surface of the first substrate and toward the second surface of the second substrate at an incidence angle of about 20° to about 80°.

4. The method according to claim 1, wherein directing the beam includes directing the beam toward the first surface of the first substrate and toward the second surface of the second substrate at an incidence angle of about 45° to about 50°.

5. The method according to claim 1, wherein the beam has a photon energy of about 0.6 eV to about 10 eV.

6. The method according to claim 1, wherein the beam has a photon energy of about 3.2 eV to about 6 eV.

7. The first substrate and the second substrate are made of silicon carbonitride (SiCN) or silicon oxide (SiO2). ２ The method according to any one of claims 1 to 6, comprising Cu embedded in one of the )

8. The method according to claim 1, wherein processing the first substrate and the second substrate is performed by carrying out at least one of a plasma process or a cleaning process which is part of a hybrid coupling process.

9. The method according to claim 8, further comprising performing an ultraviolet process to cure the first substrate after performing at least one of the plasma process or the cleaning process.

10. The method according to claim 9, further comprising performing a bonding process after performing the ultraviolet process, wherein the bonding process includes picking up a die from the first surface of the first substrate and placing the die on the second surface of the second substrate.

11. The method according to claim 10, further comprising performing an annealing process after performing the coupling process.

12. A non-temporary computer-readable storage medium that stores instructions for a method to process a first substrate and a second substrate using Extended Spectroscopic Polarization Analysis (ESE) when executed by a processor, wherein the method The beam from the extended ellipsometer is directed toward the first surface of the first substrate and toward the second surface of a second substrate different from the first substrate, During the processing of the first substrate and the second substrate, the insite ESE data is determined from each of the first surface and the second surface, Measuring the phase and amplitude changes within the determined in-situ ESE data, Using the complex dielectric function, optical conductivity, and electron correlation from the measured changes in the phase and amplitude of the in-site ESE data simultaneously, one or more parameters of the first surface of the first substrate and the second surface of the second substrate are determined. Includes, A non-temporary computer-readable storage medium in which one or more parameters include at least one of the following: level of contamination, surface bonding state, contact angle, or material composition.

13. The non-temporary computer-readable storage medium according to claim 12, wherein the insite ESE data includes changes in the phase and amplitude of the reflected beam.

14. The non-temporary computer-readable storage medium according to claim 12, wherein directing the beam includes directing the beam toward the first surface of the first substrate and toward the second surface of the second substrate at an incidence angle of about 20° to about 80°.

15. The non-temporary computer-readable storage medium according to claim 12, wherein directing the beam includes directing the beam toward the first surface of the first substrate and toward the second surface of the second substrate at an incidence angle of about 45° to about 50°.

16. The non-temporary computer-readable storage medium according to claim 12, wherein the beam has a photon energy of about 0.6 eV to about 10 eV.

17. The non-temporary computer-readable storage medium according to any one of claims 12 to 16, wherein the beam has a photon energy of about 3.2 eV to about 6 eV.

18. An apparatus for processing a first substrate and a second substrate, A processing platform for processing multiple substrates, An extended spectroscopic ellipsometer (ESE) operably connected to the processing platform, The beam from the extended ellipsometer is directed toward the first surface of the first substrate and toward the second surface of a second substrate different from the first substrate. During the processing of the first substrate and the second substrate, the insite ESE data is determined from each of the first surface and the second surface, Measuring the phase and amplitude changes within the determined in-situ ESE data, Using the complex dielectric function, optical conductivity, and electron correlation from the measured changes in the phase and amplitude of the in-site ESE data simultaneously, one or more parameters of the first surface of the first substrate and the second surface of the second substrate are determined. ESE configured to perform and Equipped with, The apparatus wherein one or more parameters include at least one of the following: level of contamination, surface bonding state, contact angle, or material composition.

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