Mark position determination method, lithography method, exposure apparatus, and article manufacturing method

Abstract

To provide a technique which is advantageous for reduction of the number of marks arranged on a substrate and reduction of a size of the marks.SOLUTION: A mark position determination method is a method for determining a position of a mark including, a first pattern arranged on a first layer of the substrate, and a second pattern arranged on a second layer of the substrate, and the method comprises: a temporarily determining step of determining, as temporary position information, information related to a position of the mark on the basis of an image of the mark; an acquiring step of acquiring relative position information indicating, relative positions of the first pattern and the second pattern; and a determining step of determining the position of the mark on the basis of the temporary position information and the relative position information.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a mark positioning method, a lithography method, an exposure apparatus, and an article manufacturing method.

Background Art

[0002] In recent years, with the miniaturization and high integration of devices, the demand for improving the overlay accuracy has been increasing. In an exposure apparatus, the positions of alignment marks provided corresponding to the shot regions of a substrate are measured for, for example, 4 to 8 points, and global alignment is performed to obtain the primary component of the arrangement of the shot regions based on the measurement results and perform alignment. Also, even when distortion (substrate distortion) occurs in the arrangement of the shot regions during the process of device manufacturing, in order to achieve high-precision alignment, a technique has been proposed for measuring the positions of a large number of alignment marks on the substrate and correcting the substrate distortion with high precision (see Patent Document 1). The substrate distortion that can be corrected by such a technique includes the shape of each shot region in addition to the shape of the arrangement of a plurality of shot regions on the substrate. For example, in the technique disclosed in Patent Document 1, correction of the shape of the arrangement of a plurality of shot regions on the substrate and correction of the shape of the shot region are performed using information on the substrate distortion acquired in advance.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Recently, there has been a strong demand to reduce the number and size of alignment marks placed on substrates in order to improve chip yield within the substrate. Furthermore, when using overlay inspection marks formed on multiple different layers of the substrate as alignment marks, the pattern area is limited compared to alignment marks formed on a reference layer with the same occupied area, which can lead to a decrease in measurement accuracy and an increase in measurement time.

[0005] The present invention aims to provide a technology that is advantageous for reducing the number of marks placed on a substrate and for miniaturization. [Means for solving the problem]

[0006] One aspect of the present invention relates to a mark position determination method for determining the position of a mark including a first pattern arranged on a first layer of a substrate and a second pattern arranged on a second layer of the substrate, the mark position determination method comprising a provisional determination step of determining information relating to the position of the mark as provisional position information based on an image of the mark, and the first pattern and the second pattern Positional displacement The process includes an acquisition step of acquiring relative position information indicating the position of a mark, and a final determination step of determining the position of the mark based on the provisional position information and the relative position information. Furthermore, the provisional position information provisionally determined in the provisional determination step includes information on the position of the first pattern and the position of the second pattern obtained based on the image of the mark, and in the final determination step, a conversion process is performed to convert the position of the second pattern determined in the provisional determination step to the position of the second pattern if the second pattern were formed without any positional displacement relative to the first pattern, based on the relative position information, and the position of the mark is determined based on the position of the first pattern determined in the provisional determination step and the position of the second pattern after the conversion process. . Another aspect of the present invention relates to a mark position determination method for determining the position of a mark including a first pattern arranged on a first layer of a substrate and a second pattern arranged on a second layer of the substrate, the mark position determination method comprising: a provisional determination step of determining information regarding the position of the mark as provisional position information based on an image of the mark; an acquisition step of acquiring relative position information indicating the amount of positional displacement between the first pattern and the second pattern; and a final determination step of determining the position of the mark based on the provisional position information and the relative position information, wherein the provisional position information provisionally determined in the provisional determination step includes information regarding the position of the first pattern and the position of the second pattern obtained based on an image of the mark, and in the final determination step, a conversion process is performed to convert the position of the mark determined in the provisional determination step to the position of the mark if the second pattern were formed without positional displacement relative to the first pattern, based on the relative position information. [Effects of the Invention]

[0007] According to the present invention, a technology is provided that is advantageous for reducing the number of marks placed on a substrate and for miniaturization. [Brief explanation of the drawing]

[0008] [Figure 1] A diagram showing the configuration of the measuring device according to the first embodiment. [Figure 2] A diagram illustrating the arrangement of multiple shot regions on a substrate. [Figure 3] A diagram showing an example of the configuration of an overlay inspection mark used as an alignment mark. [Figure 4]A flowchart illustrating the measurement process in the measuring device of the first embodiment. [Figure 5] A diagram illustrating the measurement process using the measuring device of the first embodiment. [Figure 6] A flowchart illustrating the measurement process in the measuring device of the second embodiment. [Figure 7] A diagram illustrating the measurement process using the measuring device of the second embodiment. [Figure 8] A diagram showing the configuration of the exposure apparatus according to the third embodiment. [Figure 9] A flowchart showing the exposure process in the exposure apparatus of the third embodiment. [Figure 10] A diagram illustrating a modified example of the first embodiment. [Modes for carrying out the invention]

[0009] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, identical or similar configurations are given the same reference numerals, and redundant descriptions are omitted. <First Embodiment> Figure 1(a) shows the configuration of the measuring device 100 according to the first embodiment. Figure 1(b) shows an example of the configuration of the imaging unit 50, which is one of the multiple components of the measuring device 100. Figure 2 shows an example of the arrangement of multiple shot regions on the substrate 73. Figure 3 shows an example of a mark 72 placed on the substrate 73. The measuring device 100 according to the first embodiment will be described below with reference to these figures.

[0010] The measuring device 100 is a measuring device that measures the position of a mark 72 which includes a first pattern P1 placed on a reference first layer (target layer) of the substrate 73 and a second pattern P2 formed on a second layer different from the first layer. As illustrated in Figure 1(a), the measuring device 100 may include a substrate stage WS that holds the substrate 73, an imaging unit 50, a control unit CU, and an interface UI. The target layer is the layer on which the original pattern should be aligned when transferring the original pattern to the substrate.

[0011] The substrate 73 is the object on which the shape of the arrangement of multiple shot regions on the substrate 73 and the shape of the shot regions are measured by the measuring device 100. The substrate 73 is, for example, a substrate processed for manufacturing devices such as semiconductor elements or liquid crystal display elements. The substrate 73 may be, for example, a wafer or a glass substrate.

[0012] The substrate stage WS holds the substrate 73 via a substrate chuck (not shown) and is driven by a substrate drive mechanism (not shown). The substrate drive mechanism includes an actuator such as a linear motor and can drive the substrate 73 held by the substrate stage WS by driving the substrate stage WS in the X-axis direction, Y-axis direction, Z-axis direction, Z-axis direction and rotational direction around each of these axes. The position of the substrate stage WS can be monitored using, for example, a 6-axis laser interferometer IF and controlled by a control unit CU.

[0013] The control unit CU can be configured by, for example, a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), or an ASIC (abbreviation for Application Specific Integrated Circuit), or a general-purpose or dedicated computer in which a program is incorporated, or a combination of all or part of these. The control unit CU can execute a mark positioning method for determining the position of the mark 72 including the first pattern P1 disposed on the first layer of the substrate 73 and the second pattern P2 disposed on the second layer of the substrate 73. The mark positioning method can include a preliminary determination step of determining information regarding the position of the mark 73 as preliminary position information based on an image of the mark 73. Also, the mark positioning method can include an acquisition step of acquiring relative position information indicating the relative position between the first pattern P1 and the second pattern P2. Further, the mark positioning method can include a final determination step of determining the position of the mark 73 based on the preliminary position information and the relative position information.

[0014] The interface UI includes a display device, an input device, etc., and is a user interface for transmitting information and instructions from the measuring device 100 to the user or from the user to the measuring device 100. The user can input necessary information via the input device while referring to, for example, the screen provided on the display device in the interface UI. The user can, for example, specify the shot area in which the positions of the marks 72 in the plurality of shot areas of the substrate 73 should be measured.

[0015] A configuration example of the imaging unit 50 will be described while referring to FIG. 1(b). The imaging unit 50 can include an illumination system that illuminates the substrate 73, an imaging element 75, and an imaging system that forms an image of the light from the mark 72 of the substrate 73 on the imaging element 75. In the example of FIG. 1(b), the imaging unit 50 has components shared by the illumination system and the imaging system.

[0016] First, the illumination system will be described. The light from the light source 61 is guided to the illumination aperture stop 64 via the illumination optical systems 62 and 63. The light that has passed through the illumination aperture stop 64 is guided to the polarization beam splitter 68 via the illumination optical system 65, the mirror 66, and the illumination optical system 67. The polarization beam splitter 68 transmits the light polarized in the P direction parallel to the X direction and reflects the light polarized in the S direction parallel to the Y direction. The P-polarized light that has passed through the polarization beam splitter 68 is converted into circularly polarized light by the λ / 4 plate 70 after passing through the aperture stop 69, and the mark 72 formed on the substrate 73 is Koehler illuminated via the objective optical system 71.

[0017] The illumination system may have a light quantity adjustment unit (not shown) and / or a wavelength adjustment unit (not shown). The light quantity adjustment unit is configured to arrange, for example, an ND filter selected from a plurality of ND filters having different transmittances in the optical path from the light source 61, thereby adjusting the intensity of the light illuminating the substrate 73. The wavelength adjustment unit is configured to arrange a plurality of wavelength filters having different wavelength characteristics of transmitted light in the optical path from the light source 61, thereby adjusting the wavelength of the light illuminating the substrate 73.

[0018] Next, the imaging system will be described. The light reflected, diffracted, and scattered by the mark 72 on the substrate 73 passes through the objective optical system 71 and the λ / 4 plate 70 and is guided to the aperture stop 69. The polarization state of the light from the mark 72 becomes circularly polarized light in the opposite direction to the circularly polarized light illuminating the mark 72. Therefore, if the polarization state of the light illuminating the mark 72 is right-handed circularly polarized light, the polarization state of the light from the mark 72 becomes left-handed circularly polarized light. The light converted from circularly polarized light to S-polarized light by the λ / 4 plate 70 is reflected by the polarization beam splitter 68 after passing through the aperture stop 69 and is guided to the imaging element 75 via the imaging optical system 74.

[0019] As described above, in the imaging unit 50, the optical path of light illuminating the substrate 73 and the optical path of light from the substrate 73 are separated by the polarizing beam splitter 68, and an image of the mark 72 on the substrate 73 is formed on the image sensor 75. The control unit CU can determine or acquire the position of the mark 72 in the coordinate system of the imaging unit 50 based on the signal waveform obtained by detecting the image of the mark 72. The intensity of the signal waveform from the mark 72 can be adjusted, for example, by a light intensity adjustment unit (ND filter) provided in the illumination system of the imaging unit 50, output control of the light source 61, and control of the storage time of the image sensor 75. Based on the position of the substrate stage WS obtained using the laser interferometer IF and the position of the mark 72 in the coordinate system of the imaging unit 50, the control unit CU can determine or acquire the position of the mark 72 in the coordinate system of the substrate stage WS.

[0020] In the imaging system of the imaging unit 50, a detection aperture diaphragm may be placed between the polarizing beam splitter 68 and the image sensor 75. Furthermore, the numerical apertures of the illumination aperture diaphragm 64 and the detection aperture diaphragm may be made adjustable, thereby allowing adjustment of the σ value, which is a coefficient representing the ratio of the numerical aperture of the illumination system to the numerical aperture of the imaging system. A mechanism for adjusting the numerical aperture may include, for example, a configuration in which an aperture diaphragm, arbitrarily selected from a plurality of aperture diaphragms, can be placed in the optical path.

[0021] The measuring device 100 may be configured to detect light (reflected light and scattered light) from Mark 72, or in other words, from the first pattern P1 and the second pattern P2 that constitute it, using the image sensor 75. As a method for detecting light from Mark 72, for example, dark-field detection may be employed, which controls the aperture diaphragm 64 and the detection diaphragm (the numerical aperture of the illumination system and the imaging system, respectively) to block the zero-order diffracted light from Mark 72 and detect only the higher-order diffracted light and scattered light.

[0022] The following describes the measurement target of the measuring device 100, namely the marks 72 on the substrate 73. Figures 2(a) and 2(b) show examples of arrangements of multiple shot regions on the substrate 73, respectively. In the example in Figure 2(a), the sample shot regions 151 to 154 are the shot regions on which the measurement process (alignment measurement) is performed among the multiple shot regions on the substrate 73. Scribe lines (not shown) are placed around the periphery of the shot regions. Furthermore, if each shot region contains multiple chip regions (regions that are chipped by dicing), scribe lines (not shown) are placed between adjacent chip regions. Marks 72 are placed on the scribe lines.

[0023] As described above, mark 72 includes a first pattern P1 placed on the first reference layer (target layer) of substrate 73, and a second pattern P2 formed on a second layer different from the first layer so as to be in combination with the first pattern P1. In other words, mark 72 can be an overlay inspection mark on substrate 73.

[0024] Here, we will explain why it is preferable for the mark 72 used for alignment with the target layer to be an overlay inspection mark. The substrate 73 is the object on which the shape of the arrangement of multiple shot regions on the substrate 73 and the shape of the shot regions are measured by the measuring device 100. Typically, alignment marks can be provided primarily for the purpose of measuring the position of the sample shot region. Furthermore, alignment marks can have various sizes and designs (measuring the X and Y directions individually or simultaneously) depending on the process conditions of the substrate and the detection method of the alignment optical system (imaging unit 50) of the equipment that processes the substrate. However, in order to improve the chip yield within the substrate, the area occupied by the alignment marks should be reduced, and therefore there are strict limitations on the number of alignment marks that can be placed on the scribe line.

[0025] In addition to alignment marks, overlay inspection marks are also placed on the scribe lines between shot regions to measure the overlapping error of the layer being evaluated relative to the target layer. Figure 3 shows an example of an overlay inspection mark for simultaneously measuring the overlapping error in the X and Y directions. The overlay inspection mark can be composed of a combination of a first pattern P1 provided on the target layer and a second pattern P2 of the newly exposed layer. In overlay inspection, the shape of the sample shot region is also inspected, so multiple overlay inspection marks are often provided on the scribe line. Therefore, by performing alignment using overlay inspection marks, it is possible to measure not only the shape of the arrangement of multiple shot regions on the substrate 73 but also the shape of the shot regions themselves.

[0026] In an overlay inspection mark, the first pattern P1 may include a plurality of first partial patterns 301, and the second pattern P2 may include a plurality of second partial patterns 302. In one view, the overlay inspection mark may be characterized in that the second pattern P2 is contained within a rectangular area 300 that circumscribes the first pattern P1. In another view, the overlay inspection mark may be characterized in that at least one portion of the plurality of second partial patterns 302 is positioned between at least two of the plurality of first partial patterns 301.

[0027] Furthermore, from another perspective, in overlay inspection marks, as illustrated in Figures 3(a) and (b), the first pattern P1 is placed on the target layer (first layer), while the second pattern P2 is placed on a different layer (second layer) from the target layer. Therefore, when using only the first pattern P1 as an alignment mark, the line length and number of lines in the non-measurement direction decrease compared to measuring alignment marks in the same occupied area, leading to a decrease in measurement accuracy. In addition, productivity decreases when increasing the number of alignment marks to be measured or the measurement time.

[0028] Therefore, this embodiment provides a measurement method and measuring apparatus that can perform measurements at high speed and with high accuracy even when an overlay inspection mark is used as an alignment mark. In this embodiment, the mark 72 used as an alignment mark is an overlay inspection mark that includes a first pattern P1 arranged on the first layer (target layer) which serves as the reference of the substrate 73, and a second pattern P2 arranged on a second layer different from the first layer.

[0029] Figure 3(b) schematically shows an example of a cross-section of a substrate 73 on which a mark 72 (overlay inspection mark) is formed. In this example, the substrate 73 has three layers: the bottom layer 73B, the first layer 73L as the target layer, and the second layer 73U as the layer positioned on the target layer. The layer that is the target of alignment when forming a pattern on the substrate is predetermined and is called the target layer. The first pattern P1 of the target layer 73L includes, for example, four pattern elements P1a, P1b, P1c, and P1d, and the second pattern of the layer 73U positioned on the target layer includes, for example, four pattern elements P2a, P2b, P2c, and P2d.

[0030] There may be a considerable amount of positional displacement (deviation from the design value) between the first pattern P1 and the second pattern P2 that occurs when forming the second pattern. Therefore, it is difficult to use the second pattern P2 directly as an alignment mark for the target layer 73L.

[0031] Therefore, in this embodiment, the control unit CU performs a conversion process to convert the position of the second pattern P2 to the position of the second pattern P2 if it were formed without any positional displacement relative to the first pattern P1. This conversion process is performed based on relative position information indicating the amount of positional displacement between the first pattern P1 and the second pattern P2. This makes it possible to use the second pattern P2 as part of the alignment mark of the target layer. The relative position information can be obtained in the overlay inspection of the preceding process.

[0032] The mark position determination method for determining the position of mark 72 and the measurement method for determining the position and shape of the shot area will be described below with reference to Figure 4. The mark position determination method and the measurement method are controlled by the control unit CU.

[0033] In step S201, the substrate 73 is loaded into the measuring device 100. In step S202, pre-alignment is performed. Specifically, the positions of pre-alignment marks on the substrate 73 are measured using the imaging unit 50, and the position of the substrate 73 is roughly determined based on the results. The pre-alignment in step S202 can be performed with lower resolution over a wider detection range compared to the imaging of the marks 72 in the next step S203.

[0034] In step S203, the imaging unit 50 images the mark 72. Specifically, based on the pre-alignment results, the substrate stage WS is driven to a position where the selected mark 72 of the selected sample shot area can be imaged by the imaging unit 50. Then, the optical image of the selected mark 72 of the selected sample shot area on the substrate 73 is captured by the image sensor 75, and an image is acquired. When imaging the mark 72, measurement parameter values ​​such as the wavelength of the light illuminating the mark 72, the light intensity, the σ value, and the focus position (Z position of the substrate stage WS) can be adjusted to set values ​​that allow for high-precision measurement of the position of the mark 72. The measurement parameter values ​​may be determined in advance based on past measurement results of the mark 72 and information on the structure and physical properties of the substrate 73. In addition, values ​​that control the polarization state of the light may be set as measurement parameter values. For example, in the imaging unit 50 shown in Figure 1(b), a beam splitter can be placed instead of the polarizing beam splitter 68, and a polarizing element can be configured in the illumination system to switch the polarization state.

[0035] In step S204, based on the image of the mark 72 captured in step S203, information regarding the position of the mark 72 is determined as provisional position information (i.e., the position of the mark 72 is provisionally determined) (provisional determination step). In one example, the provisional position information may include information indicating the position of the first pattern P1 of the target layer 73L and the position of the second pattern P2 of the layer 73U positioned on the target layer, obtained based on the image of the mark 72. In this example, in step S204, based on the image of the mark 72, the position of the first pattern P1 of the target layer 73L and the position of the second pattern P2 of the layer 73U positioned on the target layer are measured or determined.

[0036] Here, with reference to Figure 5, the measurement process for measuring the positions of the first pattern P1 and the second pattern P2 in step S204 will be described. Figure 5(a) illustrates the optical image of the mark 72 formed on the imaging area (imaging surface or detection surface) of the image sensor 75 in the imaging unit 50 shown in Figure 1(b). As the image sensor 75, a two-dimensional image sensor having an imaging area composed of multiple pixels arranged in the X and Y directions may be used. The control unit CU can generate detection signals including waveforms corresponding to the first pattern P1 and the second pattern P2, respectively, based on the output (imaging image) from the image sensor 75.

[0037] Figure 5(b) illustrates the detection signal SW1 of the first pattern P1, which is generated when an evaluation area is set for evaluating the first pattern P1, which represents the position in the X direction, to the image obtained by capturing the mark 72 with the image sensor 75. Figure 5(c) illustrates the detection signal SW2 of the second pattern P2, which is generated when an evaluation area is set for evaluating the second pattern P2, which represents the position in the X direction, to the image obtained by capturing the mark 72 with the image sensor 75.

[0038] The control unit CU can set evaluation areas W1L and W1R in the imaging area of ​​the image sensor 75 to include the first partial patterns P1XL and P1XR, which constitute the first pattern P1, respectively, based on the design position of the mark 72. The control unit CU can also set evaluation areas W2L and W2R in the imaging area of ​​the image sensor 75 to include the first partial patterns P2XL and P2XR, respectively, which constitute the second pattern, based on the design position of the mark 72. Detection signals SW1 and SW2 can be generated, for example, by integrating the signal intensity of each pixel within the set evaluation area in the Y direction. It is preferable that the number of pixels to be integrated is set based on the dimensional information of the mark 72 when integrating the signal intensity of each pixel of the image sensor 75.

[0039] As illustrated in Figure 5(b), the waveform S1L included in the detection signal SW1 corresponds to the signal intensity of the first partial pattern P1XL of the first pattern P1, and the waveform S1R corresponds to the signal intensity of the first partial pattern P1XR of the first pattern P1. The control unit CU obtains a measured value X1L indicating the center position of the first partial pattern P1XL from the waveform S1L, and a measured value X1R indicating the center position of the first partial pattern P1XR from the waveform S1R. Based on the measured values ​​XL1 and XR1, the control unit CU determines information indicating the position of the first pattern P1 in the X direction. Figure 5(c) is a diagram representing the detection signal SW2 of the second pattern P2, and the control unit CU can determine information indicating the position of the second pattern P2 in the X direction by similar measurement processing. Similarly, the same measurement processing is performed for the first pattern P1 and the second pattern P2 in the Y direction, and the control unit CU can determine information indicating the position of the first pattern P1 and the second pattern P2 in the Y direction.

[0040] In step S205, the control unit CU acquires relative position information (amount of misalignment) indicating the relative position of the first pattern P1 and the second pattern P2 in the sample shot area, which was measured in advance, for example, in the overlap misalignment inspection of the previous step (acquisition step). The relative position information may be stored in the memory or storage unit of the control unit CU. Here, the first layer 73L as the target layer has a plurality of first patterns P1, and the second layer 73U as the layer positioned on the target layer has a plurality of second patterns P2. After the first layer 73L and the second layer 73U are formed on the substrate 73, a measurement step to measure the relative position may be performed before step S204 (preliminary determination step). In the measurement step to measure the relative position, the relative position of the first pattern P1 selected from the plurality of first patterns P1 and the second pattern P2 corresponding to the first pattern P1 selected from the plurality of second patterns P2 may be measured. Such a measurement step may typically be part of the overlap misalignment inspection of the previous step, but may be performed afterward. In step S205, the control unit CU may acquire relative position information based on the results of the measurement step.

[0041] In steps S206 and S207, the control unit CU determines the position of mark 73 (final determination step) based on the provisional position information determined in step S204 (provisional determination step) and the relative position information acquired in step S205. In step S206, the control unit CU performs a conversion process to convert the position of the second pattern P2, which is provisional position information determined in step S204, into the position of the second pattern P2 if it were formed without any positional displacement relative to the first pattern P1. For example, let the position of the second pattern P2 determined in step S204 be (Bx, By), and the relative position information (amount of positional displacement) acquired in step S205 be (Cx, Cy). In this case, the position of the second pattern P2 (Dx, Dy) if it were formed without any positional displacement relative to the first pattern P1 is: (Dx, Dy) = (Bx - Cx, By - Cy) It is calculated as follows.

[0042] Furthermore, the conversion process for calculating (Dx, Dy) is as follows: • The measurement error caused by the measuring device 100 that measures Mark 72 is the device-induced error, also known as TIS (Tool-Induced Shift). • Process-induced errors, which are measurement errors caused by the process of processing the substrate 73 (for example, errors due to differences in the three-dimensional shape of the surface of mark 72 for each shot area), also known as WIS (Wafer Induced Shift), • Errors due to the interaction between equipment-related errors (TIS) and process-related errors (WIS) (TIS-WIS Interaction). This may be done based on an offset value to correct at least one of them.

[0043] In step S207, the control unit CU determines the position of mark 72 based on the position of the first pattern P1 as provisional position information determined in step S204 (provisional determination step) and the position (Dx, Dy) of the second pattern P2 which has been converted in step S206. The position (Ex, Ey) of mark 72 in the coordinate system of the substrate stage WS is, for example, (Ex,Ey)=((Ax+Dx) / 2+WSx,(Ay+Dy) / 2+WSy) This can be given by (Ax, Ay), where (Ax, Ay) is the position of the first pattern P1 determined in process S204 (provisional determination process). Also, (WSx, WSy) is the position of the substrate stage WS when mark 72 is imaged.

[0044] Furthermore, the position of mark 72 in the coordinate system of the imaging unit 50 (the position of mark 72 within the field of view of the imaging unit 50) (ex, ey) is, for example, (ex, ey) = ((Ax + Dx) / 2, (Ay + Dy) / 2) It can be given by.

[0045] As described above, one method for determining the position of Mark 72 is to use the average value of the position (Ax, Ay) of the first pattern P1 and the converted position (Dx, Dy) of the second pattern P2. Alternatively, the position of Mark 72 may be determined by weighting the positions (Ax, Ay) of the first pattern P1 and the converted position (Dx, Dy) of the second pattern P2. For example, the ratio of the signal intensity or contrast between the first pattern P1 and the second pattern P2, which can be calculated from the detection signal waveforms of the first pattern P1 and the second pattern P2 obtained based on the captured image of Mark 72, can be used as an evaluation parameter for weighting.

[0046] In step S208, the control unit CU determines whether the positions of all marks 72 in all sample shot areas of the substrate 73 have been determined. If the positions of all marks 72 in all sample shot areas of the substrate 73 have not been determined, the control unit CU drives the substrate stage WS to a position for measuring the position of the next mark 72 and executes steps S203 to S207 for the next mark 72. On the other hand, if the positions of all marks 72 in all sample shot areas of the substrate 73 have been determined, the process proceeds to step S209.

[0047] In process S209, the control unit CU calculates the alignment amount of the substrate 73 based on the positions of all marks 72 in all measured sample shot areas. Specifically, based on the design coordinates and measured values ​​(difference from the design coordinates) of the marks 72 in the sample shot areas, the alignment amount of the coordinates of each shot area can be determined by statistical calculations such as the least squares method. The order of the model equation used in the least squares method is determined by the arrangement and number of sample shot areas set. For example, if the total number of shot areas in the substrate is 64 and the number of sample shot areas is 4, as shown in Figure 2(a), the alignment amount will be the shift of the entire substrate and a first-order linear component (magnification and rotation). If the number of sample shot areas is 16 in the arrangement shown in Figure 2(b), the model equation representing the alignment amount (dx, dy) of the coordinates of each shot area can be expressed as follows.

[0048]

number

[0049] Furthermore, when the entire shot area within the substrate is treated as a sample shot area, the alignment amount of the coordinates of each shot area can be determined by selecting the most suitable method from the least squares model equation described above, or from the shift correction for each shot area.

[0050] Furthermore, if the positions of multiple marks 72 within each sample shot area are measured, it will be easy to understand that, in addition to the coordinate alignment correction of the shot area described above, correction of the shape of the shot area can also be performed.

[0051] In this embodiment, the calculation of the alignment amount is performed by the control unit CU, but is not limited to this. For example, it may be performed by an online host device that integrally controls other devices in the factory where the measuring device 100 is installed via a network. Furthermore, the calculated alignment amount may be transferred, for example, via the online host to the exposure device that performs the next exposure process on the substrate 73.

[0052] In process S210, the substrate 73 is discharged from the measuring device 100.

[0053] As described above, according to this embodiment, even when overlay inspection marks are used as alignment marks, measurements can be performed at high speed and with high accuracy.

[0054] In this embodiment, the process of determining a correction amount to align to the target layer based on the position of the mark 72, which includes the first pattern P1 and the second pattern P2, in the measuring device 100 has been described, but the present invention is not limited thereto.

[0055] For example, in the measuring device 100, if the first mark 72 and the second mark 92 are simultaneously located within the imaging area of ​​the image sensor 75 shown in Figure 10, the positions of the first mark 72 and the second mark 92 can be determined based on the method described above. Here, the second mark 92 includes the third pattern P3 of the third layer positioned on the target layer and the first patterns P1-3 of the target layer.

[0056] Specifically, in step S203, the first mark 72 and the second mark 92 within the imaging area may be imaged. Subsequently, in step S204, the positions of the first patterns P1-2 and P1-3 of the target layer 73L, the second pattern P2 of the second layer, and the third pattern P3 of the third layer may be tentatively determined from the detection signals generated based on the images of marks 72 and 92 from step S203.

[0057] In process S205, the control unit CU acquires, for example, the relative position information of the first pattern P1-2 and the second pattern P2 of the sample shot area, which were measured in advance in the overlap misalignment inspection of the previous process, and the relative position information of the first pattern P1-3 and the third pattern P3.

[0058] In step S206, the control unit CU performs a conversion process on the positions of the second pattern and the third pattern P3 measured in step S204. The position of the second pattern after the conversion process is denoted as (Dx, Dy) and the position of the third pattern is denoted as (Fx, Fy).

[0059] In step S207, the control unit CU determines the position of mark 92 (Gx, Gy) in the same manner as the method for determining the position of mark 72 (Ex, Ey) described above. Specifically, for example, the position of mark 92 (Gx, Gy) can be determined according to (Gx, Gy) = ((Ax + Dx) / 2 + WSx, Gy = (Ay + Dy) / 2 + WSy).

[0060] In process S209, the control unit CU can calculate the alignment amount using both the position of mark 72 (Ex, Ey) and the position of mark 92 (Gx, Gy), or their average value.

[0061] <Second Embodiment> The second embodiment will be described below. Matters not mentioned in the second embodiment may follow those of the first embodiment. The second embodiment will be described with reference to Figure 6. The configuration of the measuring device 100, substrate 73, and mark 72 in the second embodiment is the same as in the first embodiment. In the second embodiment as well, the position and shape of the shot area unit of the reference layer (target layer) are measured using the position of the mark 72 on the substrate 73 and the relative position information of the first pattern P1 and the second pattern P2 acquired in advance. Steps S301 to S303, S305, and S308 to S310 shown in Figure 6 are the same as steps S201 to S302, S205, and S208 to S210 described with reference to Figure 4, so a detailed explanation will be omitted here.

[0062] In step S304, the control unit CU tentatively determines information regarding the position of mark 73 as tentative position information based on a detection signal generated based on the captured image of mark 72 acquired in step S303 (tentative determination step). In the second embodiment, the tentative position information is information indicating the position of mark 72 determined based on images of both the first pattern P1 and the second pattern P2. In step S304 (tentative determination step), the tentative position information can be determined, for example, by processing the mark image formed by images of both the first pattern P1 and the second pattern P2 with a mark detection module. The mark detection module can be a module that detects the position of a mark based on a provided image. The mark detection module can be a software module or a hardware module. The mark detection module can be configured to detect the position of a mark, assuming that the provided image contains an image of one mark.

[0063] Here, with reference to Figure 7, a preliminary determination process for determining the position information of the mark 72 as provisional position information will be described. Figure 7(a), like Figure 5(a), illustrates the optical image of the mark 72 formed on the imaging area (imaging surface or detection surface) of the image sensor 75 shown in Figure 1(b). As the image sensor 75, a two-dimensional image sensor having an imaging area composed of multiple pixels arranged in the X and Y directions may be used. The difference from the first embodiment is that the control unit CU generates a first pattern P1 and a second pattern P2, a single detection signal for the X direction and a single detection signal for the Y direction, based on the output from the image sensor 75.

[0064] Figure 7(b) shows an example of detection signals SW3 for the first pattern P1 and the second pattern P2, which are generated when an evaluation area is set collectively for a mark representing the position in the X direction on an image obtained by imaging the mark 72 with the image sensor 75. The control unit CU sets the evaluation area W3L on the imaging area of ​​the image sensor 75 to include partial pattern P1XL of the first pattern P1 and partial pattern P2XL of the second pattern P2, based on the design position of the mark 72. The control unit CU also sets the evaluation area W3R to include partial pattern P1XR of the first pattern P1 and partial pattern P2XR of the second pattern P2, based on the design position of the mark 72. The detection signal SW3 is generated by integrating the signal intensity of each pixel within the set evaluation area in the Y direction. In other words, the detection signal is obtained from the composite image of the first pattern P1 and the second pattern P2. Here, there is a positional shift that occurs when the patterns are formed between partial pattern P1XL of the first pattern P1 and partial pattern P2XL of the second pattern P2. Therefore, each peak signal of the detection signal SW3 includes the amount of positional shift between the first pattern P1 and the second pattern P2.

[0065] In Figure 7(b), the waveform S3L included in the detected signal SW3 corresponds to the signal strength obtained by combining the partial pattern P1XL of the first pattern P1 and the partial pattern P2XL of the second pattern P2. Also in Figure 7(b), the waveform S3R corresponds to the signal strength obtained by combining the partial pattern P1XR of the first pattern P1 and the partial pattern P2XR of the second pattern P2. The control unit CU can obtain a measured value X3L representing the center position of pattern PXL from waveform S3L, and a measured value X3R representing the center position of pattern PXR from waveform S3R. Based on the measured values ​​X3L and X3R, the control unit CU can determine information regarding the position of mark 72 in the X direction as provisional position information. Similarly, the control unit CU can determine information regarding the position of mark 72 in the Y direction as provisional position information for the mark in the Y direction.

[0066] In step S306, the control unit CU performs a conversion process to convert the position of mark 72, which was determined as provisional position information in step S304, into the position of mark 72 if the second pattern P2 were formed without any positional misalignment with respect to the first pattern P1. The conversion process is performed based on the relative position information acquired in step S305. In the second embodiment, the conversion process in step S306 corresponds to the final determination process for determining the position of mark 72. The position of mark 72, which was determined as provisional position information in step S304, is obtained from a detection signal that is a composite of the first pattern P1 of the target layer (first layer) and the second pattern P2, which was positioned with a positional misalignment with respect to the target layer when forming the pattern of the second layer. Therefore, the position of mark 72, which was provisionally determined in step S304, includes an error due to that positional misalignment. The conversion process is a process to reduce or cancel out this error. Here, let (Fx, Fy) be the position of mark 72 determined as provisional position information in step S304, and (Cx, Cy) be the relative position information (positional displacement) acquired in step S305. In this case, the position of mark 72 (Gx, Gy) when the second pattern P2 is formed without any positional displacement relative to the first pattern P1 is: (Gx,Gy)=(Fx-Cx / 2,Gy=Fy-Cy / 2) It is calculated as follows. Note that (Gx, Gy) is the position of mark 72 in the coordinate system of the imaging unit 50 (the position of mark 72 within the field of view of the imaging unit 50).

[0067] Furthermore, similar to the first embodiment, the conversion process for calculating (Gx, Gy) is as follows: • The measurement error caused by the measuring device 100 that measures Mark 72 is the device-induced error, also known as TIS (Tool-Induced Shift). • Process-induced errors, which are measurement errors caused by the process of processing the substrate 73 (for example, errors due to differences in the three-dimensional shape of the surface of mark 72 for each shot area), also known as WIS (Wafer Induced Shift), • Errors due to the interaction between equipment-related errors (TIS) and process-related errors (WIS) (TIS-WIS Interaction). This may be done based on an offset value to correct at least one of them.

[0068] In step S307, the control unit CU converts the position of mark 72 in the coordinate system of the substrate stage WS based on the position of mark 72 converted in step S306 (the position of mark 72 in the coordinate system of the imaging unit 50). The position of mark 72 (Hx, Hy) in the coordinate system of the substrate stage WS is, for example, (Hx, Hy) = (Gx + WSx, Gy + WSy) This can be given by (WSx, WSy), where (WSx, WSy) is the position of the substrate stage WS during imaging of Mark 72.

[0069] In the second embodiment, the position of the mark is tentatively determined based on both the partial pattern of the first pattern and the partial pattern of the second pattern, and the position of the mark is finalized by correcting the tentatively determined position based on the relative position information between the first pattern and the second pattern.

[0070] <Third Embodiment> Next, as a third embodiment, an exposure apparatus 200 including a measuring device 100, as represented in the first or second embodiment, will be described. Figure 8(a) is a schematic diagram showing the configuration of the exposure apparatus 200 of the third embodiment. The exposure apparatus 200 is configured to transfer a master pattern to a substrate having a first layer including a first pattern and a second layer including a second pattern. The exposure apparatus 200 is used in the lithography process, which is a manufacturing process for devices or articles such as semiconductor elements or liquid crystal display elements, and is an example of a lithography apparatus for forming a pattern on a substrate 83. The exposure apparatus 200 exposes the photoresist coated on the substrate 83 via a reticle 31, which is a master, and transfers the pattern of the reticle 31 to the photoresist. A resist pattern is formed when the resist film is developed. By etching the underlying layer using the resist pattern, a pattern corresponding to the resist pattern can be formed on the underlying layer.

[0071] In this embodiment, the exposure apparatus 200 employs a step-and-scan method, but it is also possible to employ a step-and-repeat method or other exposure methods. As shown in Figure 8(a), the exposure apparatus 200 may include an illumination optical system 181, a reticle stage RS that holds the reticle 31, a projection optical system 32, a substrate stage WS that holds the substrate 83, a position measuring device 120, and a control unit CU.

[0072] The illumination optical system 181 is an optical system that illuminates the surface to be illuminated using light from the light source unit 180. The light source unit 180 includes, for example, a laser. The laser may be an ArF excimer laser with a wavelength of approximately 193 nm, or a KrF excimer laser with a wavelength of approximately 248 nm, but the type of light source is not limited to an excimer laser. For example, the light source unit 180 may use an F2 laser with a wavelength of approximately 157 nm, or an EUV (Extreme ultraviolet) laser with a wavelength of 20 nm or less as the light source.

[0073] In this embodiment, the illumination optical system 181 shapes the light from the light source 180 into slit light having a predetermined shape optimal for exposure, and illuminates the reticle 31. The illumination optical system 181 has the function of uniformly illuminating the reticle 31 and the function of polarized illumination. The illumination optical system 181 includes, for example, lenses, mirrors, optical integrators, diaphragms, etc., and is configured by arranging a condenser lens, a fly's eye lens, an aperture diaphragm, a condenser lens, a slit, and an imaging optical system in that order.

[0074] The reticle 31 is made of, for example, quartz. The reticle 31 has a pattern (circuit pattern) formed on it that is to be transferred to the substrate 83. The reticle stage RS holds the reticle 31 via a reticle chuck (not shown) and is connected to a reticle drive mechanism (not shown). The reticle drive mechanism includes a linear motor or the like and drives the reticle stage RS in the X-axis direction, Y-axis direction, Z-axis direction and rotational direction of each axis, thereby moving the reticle 31 held by the reticle stage RS. The position of the reticle 31 is measured by a reticle position measuring unit (not shown) of the oblique light incidence system and is positioned at a predetermined position via the reticle stage RS.

[0075] The projection optical system 32 has the function of forming an image of light from the object surface onto the image plane. In this embodiment, the projection optical system 32 projects light (diffracted light) that has passed through the pattern of the reticle 31 onto the substrate 83, forming an image of the pattern of the reticle 31 on the substrate. The projection optical system 32 can be an optical system consisting of a plurality of lens elements, an optical system including a plurality of lens elements and at least one concave mirror (catedioptric optical system), or an optical system including a plurality of lens elements and at least one diffractive optical element such as a kinoform.

[0076] The substrate 83 is the workpiece onto which the pattern of the reticle 31 is transferred, and can be a wafer, a liquid crystal substrate, or another workpiece. The substrate stage WS holds the substrate 83 via a substrate chuck (not shown) and is connected to a substrate drive mechanism (not shown). The substrate drive mechanism includes a linear motor or the like, and can move the substrate 83 held by the substrate stage WS by driving the substrate stage WS in the X-axis direction, Y-axis direction, Z-axis direction and rotational direction of each axis. The substrate stage WS is also provided with a reference plate 39.

[0077] The positions of the reticle stage RS and the substrate stage WS are monitored, for example, by a 6-axis laser interferometer IF, and under the control of the control unit CU, the reticle stage RS and the substrate stage WS are driven at a constant speed ratio.

[0078] The control unit CU is composed of a computer (information processing device) including a CPU and memory, and for example, it comprehensively controls each part of the exposure apparatus 200 according to a program stored in the memory unit to operate the exposure apparatus 200. The control unit CU controls the exposure process, which involves exposing the substrate 83 via the reticle 31 and transferring the pattern of the reticle 31 to the substrate 83. In this embodiment, the control unit CU also controls the measurement process in the position measuring device 120 and the correction process (calculation process) of the measured values ​​obtained by the position measuring device 120. Thus, the control unit CU also functions as part of the position measuring device 120.

[0079] In the exposure apparatus 200, light (diffracted light) that has passed through the reticle 31 is projected onto the substrate 83 via the projection optical system 32. The reticle 31 and the substrate 83 are arranged in an optically conjugate relationship. By scanning the reticle 31 and the substrate 83 at a speed ratio equal to the reduction ratio of the projection optical system 32, the pattern of the reticle 31 is transferred to the substrate 83.

[0080] The position measuring device 120 is a measuring device that measures the position of an object. In this embodiment, the position measuring device 120 measures the position of the alignment mark 82 provided on the substrate 83. The alignment mark 82, like the mark 72, is an overlay inspection mark. The position measuring device 120 may have the same configuration as the measuring device 100 described above.

[0081] The operation of the exposure apparatus 200 when the measuring device 100 of the first embodiment is applied to the position measuring device 120 will be described below with reference to Figure 9. However, the measuring device 100 of the second embodiment may also be applied to the position measuring device 120. The exposure apparatus 200 positions the pattern of the reticle 31 on a reference layer of the substrate 83 based on the position of the alignment marks 82 on the substrate 83 and performs the exposure process. The exposure process is performed by the control unit CU comprehensively controlling each part of the exposure apparatus 200. Steps S402 to S408 shown in Figure 9 are the same as steps S202 to S208 described with reference to Figure 4, so a detailed explanation is omitted here.

[0082] In step S401-1, the substrate 83 is loaded into the exposure apparatus 200. In step S401-2, calibration is performed. Specifically, the substrate stage WS is driven so that the reference mark is positioned on the optical axis of the position measuring device 120, based on the designed coordinate position of the reference mark provided on the reference plate 39 in the coordinate system of the substrate stage WS. Next, the positional deviation of the reference mark relative to the optical axis of the position measuring device 120 is measured, and based on this deviation, the coordinate system of the substrate stage WS is reset so that the origin of the coordinate system of the substrate stage WS coincides with the optical axis of the position measuring device 120. Then, the substrate stage WS is driven so that the reference mark is positioned on the optical axis of the exposure light, based on the designed positional relationship between the optical axis of the position measuring device 120 and the optical axis of the projection optical system 32. Finally, the positional deviation of the reference mark relative to the optical axis of the exposure light is measured via the projection optical system 32 using a TTL (through-the-lens) measurement system. Based on the above results, the baseline of the optical axis of the position measuring device 120 and the optical axis of the projection optical system 32 is determined.

[0083] In step S409, similar to step S209 shown in Figure 4, the alignment amount of the substrate 83 is calculated based on the positions of the alignment marks 82 of all measured sample shot areas. Steps S403 to S409 are alignment measurement steps that determine the positions of multiple shot areas based on the positions of the marks of each of the multiple sample shot areas. In step S409, global alignment can be performed to determine the shift and linear components (magnification and rotation) of the shot areas by statistical calculations such as the least squares method, based on the data of the design value and the measured value (difference from the design coordinate) of the alignment marks 82 of the sample shot areas. Depending on the number of measurement points of the sample shot areas, it is also possible to correct the arrangement of the shot areas using a multidimensional polynomial such as Equation 1 in the first embodiment. Furthermore, it is also possible to combine the correction value of the global alignment by the exposure apparatus with the multidimensional polynomial measured by the measurement apparatus 100 in the first embodiment or the correction value of each shot area to obtain the alignment amount of the substrate.

[0084] In step S410, the substrate 83 is exposed while scanning the reticle 31 and the substrate 83 in the scanning direction (Y direction) (exposure step). Specifically, based on the baseline amount in S401-2 and the substrate alignment amount in S409, the substrate 83 is aligned to the target position, and the pattern of the reticle 31 is transferred to each shot area of ​​the substrate 83 via the projection optical system 32. In step S411, the substrate 83 is discharged from the exposure apparatus 200.

[0085] Thus, according to this embodiment, even when overlay inspection marks are used as alignment marks, an exposure apparatus capable of high-speed and high-precision measurement can be provided.

[0086] <Fourth Embodiment> The following describes a method for manufacturing articles using the exposure apparatus of the third embodiment as a fourth embodiment. The method for manufacturing articles is suitable for manufacturing articles such as devices (semiconductor elements, magnetic storage media, liquid crystal display elements, etc.). The manufacturing method includes the steps of exposing a substrate coated with a photosensitive agent (forming a pattern on the substrate) using the exposure apparatus 200, and developing the exposed substrate (processing the substrate). The manufacturing method may also include other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method for manufacturing articles in this embodiment is advantageous compared to conventional methods in at least one of the performance, quality, productivity, and production cost of the articles.

[0087] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of Symbols]

[0088] 73L: First layer (target layer), 73U: Second layer, P1: First pattern, P2: Second pattern, 72: Mark, 73: Substrate

Claims

1. A method for determining the position of a mark, which includes a first pattern arranged on a first layer of a substrate and a second pattern arranged on a second layer of the substrate, A preliminary determination step in which information regarding the position of the mark is determined as provisional position information based on the image of the mark, An acquisition step to acquire relative position information indicating the amount of positional displacement between the first pattern and the second pattern, This includes a final determination step of determining the position of the mark based on the provisional position information and the relative position information, The provisional position information provisionally determined in the provisional determination step includes information regarding the position of the first pattern and the position of the second pattern obtained based on the image of the mark, In the aforementioned decision-making process, Based on the relative position information, a conversion process is performed to convert the position of the second pattern determined in the provisional determination step to the position of the second pattern if the second pattern were formed without any positional displacement relative to the first pattern. The position of the mark is determined based on the position of the first pattern determined in the preliminary determination step and the position of the second pattern after the conversion process. A method for determining the position of a mark, characterized by the following features.

2. A method for determining the position of a mark, which includes a first pattern arranged on a first layer of a substrate and a second pattern arranged on a second layer of the substrate, A preliminary determination step in which information regarding the position of the mark is determined as provisional position information based on the image of the mark, An acquisition step to acquire relative position information indicating the amount of positional displacement between the first pattern and the second pattern, This includes a final determination step of determining the position of the mark based on the provisional position information and the relative position information, The provisional position information provisionally determined in the provisional determination step includes information regarding the position of the first pattern and the position of the second pattern obtained based on the image of the mark, In the main determination step, a conversion process is performed to convert the position of the mark determined in the provisional determination step into the position of the mark if the second pattern is formed without any positional displacement relative to the first pattern, based on the relative position information. A method for determining the position of a mark, characterized by the following features.

3. The first layer has a plurality of first patterns, and the second layer has a plurality of second patterns. After the first and second layers are formed on the substrate, the process further includes a measurement step, prior to the preliminary determination step, in which the relative position between the first pattern selected from the plurality of first patterns and the second pattern from the plurality of second patterns that corresponds to the selected first pattern is measured. In the acquisition step, relative position information is acquired based on the results of the measurement step. The method for determining the position of a mark according to claim 1 or 2, characterized by the above.

4. The conversion process is performed based on an offset value to correct for at least one of the following: an equipment-related error, which is a measurement error by the measuring device that measures the mark; a process-related error, which is a measurement error by the process that processes the substrate; and an error resulting from the interaction between the equipment-related error and the process-related error. A method for determining the position of a mark according to any one of claims 1 to 3.

5. When determining the position of the mark based on the position of the first pattern determined in the provisional determination step and the position of the second pattern after the conversion process, weights are applied to the position of the first pattern determined in the provisional determination step and the position of the second pattern after the conversion process. The method for determining the position of a mark according to feature 1.

6. The provisional position information provisionally determined in the provisional determination step is information indicating the position of the mark determined based on images of both the first pattern and the second pattern. A method for determining the position of a mark according to any one of claims 1 to 5.

7. In the provisional determination step, the provisional position information is determined by processing the mark image formed by both the first pattern and the second pattern images using a mark detection module. The mark detection module is a module that detects the position of a mark based on the provided image. A method for determining the position of a mark according to any one of claims 1 to 5.

8. In the final determination step, the position of the mark is determined based on an offset value that corrects for at least one of the following: an equipment-related error, which is a measurement error by the measuring device that measures the mark; a process-related error, which is a measurement error by the process that processes the substrate; and an error resulting from the interaction between the equipment-related error and the process-related error. The method for determining the position of a mark according to claim 6 or 7, characterized in that it is the method for determining the position of a mark according to claim 6 or 7.

9. The first pattern and the second pattern are marks for measuring the overlapping error between the first layer and the second layer. The method for determining the position of a mark according to any one of claims 1 to 8.

10. In the mark, the second pattern is contained within a rectangular area circumscribing the first pattern. The method for determining the position of a mark according to feature 9.

11. The first pattern includes a plurality of first sub-patterns, and the second pattern includes a plurality of second sub-patterns. In the mark, at least one portion of the plurality of second partial patterns is positioned between at least two first partial patterns among the plurality of first partial patterns. The method for determining the position of a mark according to claim 9 or 10, characterized in that it is the method for determining the position of a mark according to claim 9 or 10.

12. A lithography method for transferring a master pattern onto a substrate having a first layer containing a first pattern and a second layer containing a second pattern, A mark position determination step of determining the position of a mark including the first pattern and the second pattern according to the mark position determination method described in any one of claims 1 to 11, A transfer step includes aligning the original pattern with respect to the first layer based on the position of the mark determined in the mark position determination step, and transferring the original pattern to the substrate. A lithography method characterized by the following:

13. The substrate has a plurality of shot regions, In the mark position determination step, relative position information is obtained by measuring the relative positions of the first pattern and the second pattern in multiple sample shot regions among multiple shot regions. The lithography method according to feature 12.

14. The process further includes an alignment measurement step of determining the positions of the plurality of shot regions based on the positions of the marks in each of the plurality of sample shot regions, The transfer step includes an exposure step of exposing the plurality of shot regions based on the results of the alignment measurement step. The lithography method according to feature 13.

15. The mark position determination step includes an imaging step of acquiring an image of the mark by imaging the mark on the substrate held by the substrate stage, In the mark position determination step, the position of the mark in the coordinate system of the substrate stage is determined based on the position of the substrate stage and the position of the mark when the imaging step is performed. The lithography method according to any one of claims 12 to 14.

16. An exposure apparatus for transferring a master pattern to a substrate having a first layer containing a first pattern and a second layer containing a second pattern, An imaging unit that images a mark including the first pattern and the second pattern, The system includes: a control unit which performs a provisional determination to determine information regarding the position of the mark as provisional position information based on an image of the mark captured by the imaging unit; a control unit which performs a final determination to determine the position of the mark based on the provisional position information and relative position information indicating the amount of positional displacement between the first pattern and the second pattern; and controls the exposure process for the shot area of ​​the substrate based on the position of the mark. The provisional position information determined by the provisional decision includes information about the position of the first pattern and the position of the second pattern obtained based on the image of the mark, In the aforementioned decision, Based on the relative position information, a conversion process is performed to convert the position of the second pattern determined in the provisional determination to the position of the second pattern if the second pattern were formed without any positional displacement relative to the first pattern. Based on the position of the first pattern determined by the provisional determination and the position of the second pattern after the conversion process, the position of the mark is determined. An exposure apparatus characterized by the following features.

17. An exposure apparatus for transferring a master pattern to a substrate having a first layer containing a first pattern and a second layer containing a second pattern, An imaging unit that images a mark including the first pattern and the second pattern, The system includes: a control unit which performs a provisional determination to determine information regarding the position of the mark as provisional position information based on an image of the mark captured by the imaging unit; a control unit which performs a final determination to determine the position of the mark based on the provisional position information and relative position information indicating the amount of positional displacement between the first pattern and the second pattern; and controls the exposure process for the shot area of ​​the substrate based on the position of the mark. The provisional position information determined by the provisional decision includes information about the position of the first pattern and the position of the second pattern obtained based on the image of the mark, In the final determination, a conversion process is performed to convert the position of the mark determined in the provisional determination, based on the relative position information, to the position of the mark if the second pattern were formed without any positional displacement relative to the first pattern. An exposure apparatus characterized by the following features.

18. A step of forming a resist pattern on a substrate according to the lithography method described in any one of claims 12 to 15, A processing step of processing the substrate having the resist pattern to obtain an article, A method for manufacturing articles, characterized by including the following:

Images