Rubber components and semiconductor manufacturing-related equipment

Abstract

To provide a rubber member having excellent corrosion resistance and a semiconductor manufacturing-related device using the same.SOLUTION: Provided is a rubber member that includes a halogen-based rubber containing at least one element selected from the group consisting of chlorine, bromine and iodine, where the rubber member is at least one member selected from the group consisting of building material members, mobility members, aerospace members, semiconductor members and information communication members, and where the rubber member comes into contact with a corrosive substance.SELECTED DRAWING: None

Description

[Technical Field]

[0001] This disclosure relates to rubber components and semiconductor manufacturing-related equipment. [Background technology]

[0002] In applications such as rubber rollers, the use of chlorinated polyolefin compositions has been proposed to improve durability (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-96824 [Patent Document 2] International Publication No. 2022 / 145447 [Overview of the project] [Problems that the invention aims to solve]

[0004] This disclosure aims to provide a rubber component with excellent corrosion resistance and semiconductor manufacturing-related equipment using the same. [Means for solving the problem]

[0005] (1) This disclosure relates to a rubber member including a halogenated rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine, The rubber member is at least one selected from the group consisting of building materials, mobility components, aerospace components, semiconductor components, and information and communication components. This is a rubber component that comes into contact with corrosive substances.

[0006] Disclosure (2) is the rubber member according to Disclosure (1), wherein the halogenated rubber is at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber.

[0007] The present disclosure (3) is the rubber member according to the present disclosure (1) or (2), which contains at least one acid acceptor selected from the group consisting of a lead compound and an epoxy compound.

[0008] The present disclosure (4) is the rubber member according to the present disclosure (3), wherein the acid acceptor is at least one selected from the group consisting of lead oxide and epoxidized polybutadiene.

[0009] The present disclosure (5) is the rubber member according to the present disclosure (3) or (4), which contains 1 to 35% by mass of the acid acceptor with respect to the halogen-based rubber.

[0010] The present disclosure (6) is the rubber member according to the present disclosure (3) or (4), which contains 10 to 30% by mass of the acid acceptor with respect to the halogen-based rubber.

[0011] The present disclosure (7) is the rubber member in any combination with any one of the present disclosures (1) to (6), wherein the halogen-based rubber is crosslinked by a peroxide crosslinking agent and / or a sulfur-based crosslinking agent.

[0012] The present disclosure (8) is the rubber member in any combination with any one of the present disclosures (1) to (7), wherein the rubber member is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a packing, a gasket, a washer, and a sealing material.

[0013] The present disclosure (9) is the rubber member in any combination with any one of the present disclosures (1) to (7), wherein the rubber member is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a gasket, a washer, and a sealing material.

[0014] The present disclosure (10) is the rubber member in any combination with any one of the present disclosures (1) to (9), wherein the pH of the corrosive substance is 6 or less or 8 or more.

[0015] The present disclosure (11) is a rubber member in any combination with any one of the present disclosures (1) to (10) where the redox potential (vsNHE) of the corrosive substance is -2.0 to 3.0V.

[0016] The present disclosure (12) is a rubber member in any combination with any one of the present disclosures (1) to (11) where the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and salt water.

[0017] The present disclosure (13) is the rubber member according to the present disclosure (12), where the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid.

[0018] The present disclosure (14) is that the basic substance is TMAH([(CH3)4N] + [OH] - ), and the rubber member according to the present disclosure (12) or (13), which is at least one selected from the group consisting of an aqueous sodium hydroxide solution, aqueous ammonia, and a mixed chemical solution of hydrogen peroxide and aqueous ammonia.

[0019] The present disclosure (15) is that the corrosive substance is at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH([(CH3)4N] + [OH] - ), an aqueous sodium hydroxide solution, a mixed chemical solution of hydrogen peroxide and aqueous ammonia, and isopropyl alcohol, and is a rubber member in any combination with any one of the present disclosures (1) to (14).

[0020] The present disclosure (16) is a rubber member in any combination with any one of the present disclosures (1) to (15), where the rubber member is a member for a semiconductor manufacturing related apparatus.

[0021] This disclosure (17) is a rubber member according to this disclosure (16), wherein the semiconductor manufacturing-related equipment is equipment in which chemicals are used within the equipment.

[0022] This disclosure (18) is a rubber member in any combination of any of the disclosures (1) to (17) in which a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in each of the following four chemical solutions for one week, and the relative value of the mass after immersion, with the mass before immersion set to 100, is 60 or more and 140 or less in all cases. (Medicinal solution) 25% by mass TMAH([(CH3)4N] + [OH] - (80℃) 49% by mass hydrofluoric acid (70℃) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by mass in a volume ratio of 1:100) (20℃) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C)

[0023] The present disclosure (19) is a rubber member in any combination of any of the present disclosures (1) to (18), wherein when a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in each of the following nine chemical solutions for one week, and the relative value of the mass after immersion is calculated with the mass before immersion set to 100, the average of the relative values ​​for the nine chemical solutions is 80 or more and 120 or less, and the standard deviation is 20 or less. (Medicinal solution) 25% by mass TMAH([(CH3)4N] + [OH] - (80℃) 100% by mass isopropyl alcohol (80℃) 49% by mass hydrofluoric acid (70℃) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by mass in a volume ratio of 1:5) (20℃) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by mass in a volume ratio of 1:100) (20℃) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C) SC1 (a mixture of 25-28% by mass of aqueous ammonia, 30-36% by mass of aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) 85% by mass phosphoric acid (80℃)

[0024] Disclosure (20) is a rubber member in any combination of any of Disclosures (1) to (19) such that when a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week, the amount of metal leaching of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) is 30 ppb or less for each element.

[0025] Disclosure (21) is a rubber member in any combination of any of Disclosures (1) to (20) wherein the amount of metal leaching of two elements (Ca, Pb) is 10,000 ppb or less each when a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week.

[0026] The present disclosure (22) is a rubber member in any combination of any of the present disclosures (1) to (21), wherein when a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week, the amount of metal leaching of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 10,000 ppb or less for each element.

[0027] Disclosure (23) is a semiconductor manufacturing-related apparatus equipped with rubber members in any combination of any of Disclosures (1) to (22).

[0028] Disclosure (24) is a semiconductor manufacturing-related apparatus of Disclosure (23), which is at least one selected from the group consisting of semiconductor manufacturing equipment and semiconductor manufacturing equipment-related apparatus.

[0029] This disclosure (25) states that the semiconductor manufacturing apparatus is at least one selected from the group consisting of photolithography apparatus, thin film formation / etching / cleaning / drying apparatus, inspection / evaluation apparatus / manufacturing apparatus, resist processing apparatus, etching apparatus, cleaning / drying apparatus, CVD apparatus, thin film formation apparatus, CMP apparatus, processing apparatus, aging apparatus, and inspection apparatus. The semiconductor manufacturing equipment according to this disclosure (24) is a semiconductor manufacturing equipment in which the semiconductor manufacturing equipment is at least one selected from the group consisting of a pure water / chemical equipment, a gas equipment, a cleanroom equipment, and manufacturing equipment.

[0030] This disclosure (26) states that the photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a discam apparatus. The thin film formation, etching, cleaning, and drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrubbing cleaning apparatus. The aforementioned inspection and evaluation device / manufacturing device is a defect correction device, The resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus. The etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus. The washing and drying apparatus is at least one selected from the group consisting of a wet washing apparatus, a scrubbing washing apparatus, and a drying apparatus. The CVD apparatus is at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, and ALD apparatus. The thin film formation apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus. The CMP device is at least one selected from the group consisting of a CMP device and a CMP cleaning device. The aforementioned processing apparatus is a bump plating apparatus, The aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus. The inspection device is a life test device, The aforementioned pure water / chemical solution system is at least one selected from the group consisting of a chemical supply system, a slurry supply system, a chemical purification system, and a waste liquid treatment system. The gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device. The cleanroom equipment is at least one selected from the group consisting of a thermal chamber and an environmental testing apparatus. The semiconductor manufacturing equipment of this disclosure (25) is at least one selected from the group consisting of a jig cleaning and drying device, a flow control device, a packaging device, and a liquid / gas measuring device. [Effects of the Invention]

[0031] This disclosure provides a rubber component with excellent corrosion resistance and semiconductor manufacturing-related equipment using the same. [Modes for carrying out the invention]

[0032] The following provides a detailed explanation of this disclosure.

[0033] This disclosure relates to a rubber member comprising a halogenated rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine, wherein the rubber member is at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials, and is a rubber member that comes into contact with corrosive substances. The rubber material of this disclosure has excellent corrosion resistance (particularly chemical resistance).

[0034] The rubber material of this disclosure can also suppress metal leaching.

[0035] The rubber member of the present disclosure contains a halogen-based rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine. The halogen-based rubber preferably contains at least one selected from the group consisting of chlorine and bromine, and more preferably contains chlorine. The halogen-based rubber preferably does not contain fluorine.

[0036] Examples of the halogen-based rubber include chlorosulfonated olefin rubbers such as chlorosulfonated ethylene rubber (CSM); chlorinated polyolefin rubbers such as chlorinated polyethylene rubber (CM); halogenated butyl rubbers such as chlorinated butyl rubber (CIIR) and brominated butyl rubber (BIIR); epichlorohydrin rubber (ECO), chloroprene rubber (CR), etc. One kind or two or more kinds can be used. As the halogen-based rubber, at least one selected from the group consisting of chlorosulfonated olefin rubber and chlorinated polyolefin rubber is preferable, and chlorosulfonated olefin rubber is more preferable, in terms of further improving corrosion resistance and further suppressing metal elution. Also, from the same viewpoint, at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber is preferable, and chlorosulfonated ethylene rubber is more preferable.

[0037] The halogen-based rubber preferably has a Mooney viscosity (ML 1+4 (100 °C)) of 10 or more, more preferably of 20 or more, still more preferably of 30 or more, still more preferably of more than 40, and preferably of 200 or less, more preferably of 170 or less, in terms of further improving corrosion resistance and compression set characteristics. The Mooney viscosity is measured in accordance with ASTM D 1646.

[0038] The halogen-based rubber preferably has a Mooney viscosity (ML 1+4The temperature (at 121°C) is preferably 10 or higher, more preferably 20 or higher, even more preferably 30 or higher, even more preferably 40 or higher, and also preferably 200 or lower, and more preferably 170 or lower. The above Mooney viscosity is measured in accordance with ASTM D 1646.

[0039] The above-mentioned chlorosulfonated olefin rubber is a polymer having a structure in which a chlorosulfone group (-SO2Cl) and chlorine are bonded to a polyolefin main chain. Chlorosulfonated olefin rubber can be obtained by chlorosulfonating and chlorinating polyolefins.

[0040] The above-mentioned polyolefin is a polymer having monomer units derived from an olefin, and examples of such olefins include ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, 1-octene, and 1-decene.

[0041] The polyolefins mentioned above are preferably polyolefins having at least ethylene and / or propylene as monomer units. For example, homopolymers of ethylene or propylene or copolymers of ethylene and / or propylene are preferred, and more preferably, polyethylene, polypropylene, ethylene-α-olefin copolymers, ethylene-vinyl compound copolymers, etc. Examples of the α-olefins mentioned above include propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, 1-octene, 1-decene, etc. Examples of the vinyl compounds mentioned above include vinyl acetate, vinyl alcohol, acrylic acid, methyl methacrylate, vinyl chloride, acrylonitrile, styrene, vinylcyclohexane, N-isopropylacrylamide, acrolein, vinylene carbonate, maleic anhydride, etc.

[0042] The above polyolefin may be copolymerized with other polymerizable components. Examples of other polymerizable components include linear dienes such as 1,3-butadiene, isoprene, 1,4-hexadiene, 1,6-octadiene, 2-methyl-1,5-hexadiene, 6-methyl-1,5-heptadiene, and 7-methyl-1,6-octadiene; and cyclic dienes such as 1,3-cyclohexadiene, 1,4-cyclohexadiene, dicyclopentadiene, 5-vinyl-2-norbornene, 5-ethylidene-2-norbornene, 5-methylene-2-norbornene, and 5-isopropylidene-2-norbornene.

[0043] Polyethylene is preferred as the polyolefin, and chlorosulfonated ethylene rubber (chlorosulfonated polyethylene) is preferred as the chlorosulfonated olefin rubber.

[0044] Chlorosulfonated olefin rubber can be produced by reacting the above-mentioned polyolefin with chlorine and sulfur dioxide, or by reacting the above-mentioned polyolefin with sulfuryl chloride in the presence of an amine.

[0045] The chlorine content in the chlorosulfonated olefin rubber described above is not particularly limited, but from the viewpoint of further improving corrosion resistance and rubber elasticity, 5 to 60% by mass is preferred, 10 to 50% by mass is more preferred, and 20 to 45% by mass is particularly preferred. Similarly, the sulfur content in the chlorosulfonated olefin rubber is not particularly limited, but 0.1 to 5% by mass is preferred, 0.4 to 3% or more by mass is more preferred, and 0.6 to 2% by mass is particularly preferred. The chlorine and sulfur content can be calculated by elemental analysis.

[0046] The above-mentioned chlorinated polyolefin rubber is obtained by chlorinating polyolefins. Examples of polyolefins include homopolymers of α-olefins having 2 to 10 carbon atoms, such as polyethylene and polypropylene, or copolymers of two or more α-olefins, such as block copolymerized polypropylene and random copolymerized polypropylene. Among these, unsulfonated polyolefins are more preferred, and polyethylene is particularly preferred. In other words, chlorinated polyethylene rubber is particularly preferred as the above-mentioned chlorinated polyolefin rubber. Furthermore, it is preferable that the above-mentioned chlorinated polyolefin rubber does not have hydrogen atoms substituted with atoms other than halogen atoms.

[0047] The chlorination of polyolefins can be carried out, for example, by introducing chlorine gas into an aqueous suspension of polyolefins.

[0048] The above-mentioned chlorinated polyolefin rubber preferably has a chlorine content of 25% by mass or more, more preferably 30% by mass or more, even more preferably 35% by mass or more, even more preferably 38% by mass or more, and also preferably 50% by mass or less, more preferably 45% by mass or less, and even more preferably 43% by mass or less, in terms of further improving corrosion resistance and further suppressing metal elution. The chlorine content is determined by heating and burning the sample in a glass tube with a gas burner flame to dehydrogenate it, absorbing the resulting hydrochloric acid gas into distilled water, and then neutralizing and titrating it with 0.1 mol / L sodium hydroxide normal solution.

[0049] The above-mentioned chlorinated polyolefin rubber has improved corrosion resistance and compression set properties, and its Mooney viscosity (ML) is further enhanced. 1+4 The temperature (at 121°C) is preferably 30 or higher, more preferably 50 or higher, even more preferably 55 or higher, and preferably 140 or lower, more preferably 130 or lower, and even more preferably 120 or lower. The above Mooney viscosity is measured in accordance with ASTM D 1646.

[0050] The weight-average molecular weight Mw of the above-mentioned chlorinated polyolefin rubber is preferably 100,000 or more, more preferably 150,000 or more, preferably 300,000 or less, and more preferably 250,000 or less. Having Mw within this range allows the Mooney viscosity to be adjusted to the above range, making it easier to obtain the desired properties. The weight-average molecular weights mentioned above are the average molecular weights converted to polystyrene equivalents by gel permeation chromatography (GPC, eluent: tetrahydrofuran, temperature: 38°C).

[0051] The above-mentioned chlorinated polyolefin rubber is preferably amorphous. In this specification, amorphous means that the heat of fusion of the crystals, measured using a differential scanning calorimeter by raising the temperature of the sample from 30°C at a heating rate of 10°C per minute, is 2.0 J / g or less.

[0052] The above-mentioned halogen-based rubber is usually crosslinked. The crosslinking method is not limited, but it is preferable to crosslink with a peroxide crosslinking agent and / or a sulfur-based crosslinking agent, and more preferably with a peroxide crosslinking agent, in that it further improves corrosion resistance and further suppresses metal elution.

[0053] As the above peroxide crosslinking agent, known agents can be used, and organic peroxides are preferred. Examples of the above organic peroxides include diacyl peroxides such as benzoyl peroxide, dibenzoyl peroxide, p-chlorobenzoyl peroxide, stearoyl peroxide, lauroyl peroxide, 4-methylbenzoyl peroxide; 1-butyl peroxyacetate, t-butyl peroxybenzoate, t-butyl peroxyphthalate, t-butyl peroxymaleic acid, t-butyl peroxylaurate, t-hexyl peroxybenzoate, 2,5 Peroxyesters such as dimethyl-2,5-di(benzoylperoxy)hexane and di-t-butylperoxyisophthalate; methyl ethyl ketone peroxide, 1,1-bis(t-butylperoxy)2-methylcyclohexane, 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-hexylperoxy)cyclohexane, 1,1-bis(t-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-butylperoxy) Peroxyketals such as (-oxy)cyclohexane, n-butyl-4,4-bis(t-butylperoxy)valerate; di-t-butylperoxybenzoate, 1,3-bis(1-butylperoxyisopropyl)benzene, dicumyl peroxide, t-butylcumyl peroxide, 2,5-dimethyl-2,5-di(t-butylperoxy)hexane (trade name: Perhexa(registered trademark) 25B), α,α'-bis(t-butylperoxy)diisopropylbenzene (trade name: Perbutyl(registered trademark) Examples include dialkyl peroxides such as (Registered Trademark) P, peroximon F-40, and 2,5-dimethyl-2,5-di(t-butylperoxyl)hexyn-3 (trade name: Perhexyn (Registered Trademark) 25B-40); hydroperoxides such as t-butyl hydroperoxide; and monoperoxycarbonates such as t-hexylperoxyisopropyl monocarbonate, t-butylperoxyisopropyl monocarbonate, and t-butylperoxy-2-ethylhexyl monocarbonate.

[0054] In particular, organic peroxides with a 1-minute half-life temperature of 130°C or higher are preferred. The 1-minute half-life temperature of an organic peroxide is the temperature at which the organic peroxide decomposes and the initial amount of reactive oxygen species is halved in one minute. The method of measurement is not particularly limited, but for example, it can be determined by calculating the half-life of an organic peroxide at a peroxide concentration of 0.10 mol / L at multiple temperatures in a solvent that is relatively inactive to radicals (such as benzene) and plotting these data.

[0055] As the sulfur-based crosslinking agent mentioned above, known substances can be used, such as elemental sulfur or sulfur compounds.

[0056] The amount of crosslinking agent used is preferably 0% by mass or more, more preferably 0.5% by mass or more, even more preferably 3.0% by mass or more, and preferably 20% by mass or less, more preferably 15% by mass or less, and even more preferably 10% by mass or less, relative to the uncrosslinked halogen-based rubber.

[0057] The rubber member of this disclosure preferably further contains an acid acceptor. As the acid acceptor, known substances such as lead compounds such as lead oxide and red lead; magnesium compounds such as magnesium oxide; epoxy compounds such as epoxidized polybutadiene, aliphatic glycidyl ether, epoxidized oil, and epichlorohydrin derivatives can be used; and hydrotalcite can also be used. In particular, at least one selected from the group consisting of lead compounds and epoxy compounds is preferred in that it further improves corrosion resistance, and epoxy compounds are more preferred in that metal elution is further suppressed. Furthermore, from a similar viewpoint, at least one selected from the group consisting of lead oxide and epoxidized polybutadiene is preferred, and epoxidized polybutadiene is more preferred.

[0058] The epoxidized polybutadiene mentioned above is not particularly limited, but examples include epoxy-modified polybutadienes. Compounds in which epoxy groups are introduced by oxidation of vinyl groups are particularly preferred. Commercially available products include NISSO-PB® JP-100 and JP-200 (both manufactured by Nippon Soda Co., Ltd.), Epolide® PB3600 and 4700 (both manufactured by Daicel Corporation), Adekasizer® BF-1000 (manufactured by ADEKA Corporation), and Ricon® 657 (manufactured by Clay Valley Corporation), which can be used individually or in combination of two or more. It is also possible to use triazine-crosslinked epoxidized polybutadiene.

[0059] The epoxidized polybutadiene preferably has a number average molecular weight of 500 or more, more preferably 1000 or more, even more preferably 1100 or more, even more preferably 1200 or more, particularly preferably 2000 or more, and also preferably 50000 or less, more preferably 10000 or less, even more preferably 8000 or less, even more preferably 6000 or less, and particularly preferably 5000 or less. The number-average molecular weight of epoxidized polybutadiene is measured by gel permeation chromatography (GPC, eluent: tetrahydrofuran, temperature: 40°C) and converted to polystyrene equivalent.

[0060] The epoxidized polybutadiene preferably has an epoxy equivalent of 50 or more, more preferably 100 or more, even more preferably 140 or more, and preferably 400 or less, and more preferably 300 or less. The epoxy equivalent of epoxidized polybutadiene is measured according to JIS K7236 (2001).

[0061] The content of the above acid acceptor is preferably 1% by mass or more, more preferably 3% by mass or more, even more preferably 5% by mass or more, even more preferably 10% by mass or more, and preferably 50% by mass or less, more preferably 35% by mass or less, and even more preferably 30% by mass or less, relative to the above halogen-based rubber.

[0062] The rubber member of this disclosure may further contain processing aids. Examples of such processing aids include fatty acid esters, fatty acid zinc salts, and pentaerythritol. Among these, fatty acid esters are preferred in that they further suppress metal elution and are non-reactive with epoxy compounds.

[0063] The content of the above processing aid may be 0% by mass relative to the above halogen-based rubber, but is preferably 1% by mass or more, more preferably 2% by mass or more, even more preferably 3% by mass or more, and also preferably 10% by mass or less, more preferably 7% by mass or less, and even more preferably 5% by mass or less.

[0064] The rubber member of this disclosure may further contain a crosslinking aid. Examples of the above crosslinking aid include thiazole-based vulcanization accelerators, thiram-based vulcanization accelerators, guanidine-based vulcanization accelerators, triallyl isocyanurate, and dithiocarbamate. In particular, in terms of corrosion resistance, at least one selected from the group consisting of thiazole-based vulcanization accelerators, thiram-based vulcanization accelerators, guanidine-based vulcanization accelerators, and triallyl isocyanurate is preferred, a combination of two selected from the group consisting of thiazole-based vulcanization accelerators, thiram-based vulcanization accelerators, and guanidine-based vulcanization accelerators, and triallyl isocyanurate is more preferred, a combination of three types including thiazole-based vulcanization accelerators, thiram-based vulcanization accelerators, and guanidine-based vulcanization accelerators, and triallyl isocyanurate is even more preferred. Furthermore, when using sulfur-based crosslinking aids, the activated sulfur generated from these aids can also function as a crosslinking agent.

[0065] The content of the above crosslinking aid is preferably 0% by mass or more, more preferably 0.5% by mass or more, even more preferably 1.0% by mass or more, and preferably 10% by mass or less, and more preferably 5% by mass or less, relative to the above halogen-based rubber.

[0066] The rubber member of this disclosure may further include a reinforcing material (filler). The reinforcing material is not particularly limited, but specific examples include carbon black, silica, calcium carbonate, talc, clay, aluminum hydroxide, magnesium hydroxide, magnesia, etc. Carbon black and silica are more preferred due to their excellent wear resistance. These reinforcing materials may be surface-treated for purposes such as antistatic properties.

[0067] The content of the above reinforcing material is preferably 100 parts by mass or less, more preferably 70 parts by mass or less, and even more preferably 50 parts by mass or less, per 100 parts by mass of the above halogen-based rubber, and also preferably 0 parts by mass or more, more preferably 10 parts by mass or more, and even more preferably 20 parts by mass or more.

[0068] The rubber member of this disclosure may further contain a plasticizer. The plasticizer may be one of those commonly used in polyvinyl chloride. Specifically, these include: phenyl alkylsulfonates (trade name Mesamoll®); dimethyl phthalate, diethyl phthalate, dibutyl phthalate, diheptyl phthalate, di-n-octyl phthalate, 2-ethylhexyl phthalate (hereinafter sometimes abbreviated as DOP), isononyl phthalate, octyldecyl phthalate, butylbenzyl phthalate, dicyclohexyl phthalate, n-octyl tetrahydrophthalate, di-2-ethylhexyl tetrahydrophthalate, Phthalate ester plasticizers such as diisodecyl tetrahydrofurate; aliphatic monobasic acid ester plasticizers such as butyl oleate and glycerin monooleate; dibutyl adipate, di-n-hexyl adipate, di-2-ethylhexyl adipate, diisononyl adipate, diisodecyl adipate, dialkyl 610 adipate, dibutyl diglycol adipate, di-2-ethylhexyl azelaate, di-n-hexyl azelaate, dibutyl sebacate, seba Aliphatic dibase ester plasticizers such as di-2-ethylhexyl cinnamate; trimellitic acid ester plasticizers such as trialkyl (C4-11) trimellitic acid, cyclohexenecarboxylic acid ester, trioctyl trimellitic acid, and isononyl trimellitic acid ester; polyester plasticizers such as propylene glycol adipate and 1,3-butylene glycol adipate, which are polymers of dibasic acids such as adipic acid, azelaic acid, sebacic acid, and phthalic acid with glycols, glycerins, and monobasic acids; phosphate ester plasticizers such as triethyl phosphate, tributyl phosphate, tri-2-ethylhexyl phosphate, triphenyl phosphate, tricresyl phosphate, trichloroethyl phosphate, trisdichloropropyl phosphate, tributoxyethyl phosphate, tris(β-chloropropyl) phosphate, octyldiphenyl phosphate, tris(isopropylphenyl) phosphate, and cresyldiphenyl phosphate; and chlorinated paraffinic plasticizers can be used.

[0069] The content of the plasticizer is preferably 30 parts by mass or less, more preferably 20 parts by mass or less, and even more preferably 15 parts by mass or less, per 100 parts by mass of the halogenated rubber, and also preferably 0.1 parts by mass or more, more preferably 1.0 part by mass or more, and even more preferably 5.0 parts by mass or more.

[0070] The rubber components of this disclosure may further contain other components as necessary. Examples of these other components include known additives used in rubber compositions, such as stabilizers, antioxidants, vulcanization accelerators (e.g., stearic acid), viscosity modifiers, flame retardants, and pigments, and these may be added to the extent that they do not impair the effects of this disclosure.

[0071] Using an antioxidant as one of the other components mentioned above is one preferred embodiment. Examples of primary antioxidants include amine-based antioxidants and phenol-based antioxidants, and one or more of these can be used. Examples of secondary antioxidants include sulfur-based antioxidants and phosphorus-based antioxidants. The use of a primary antioxidant and a secondary antioxidant in combination is preferred, and a combination of an amine-based antioxidant and a sulfur-based antioxidant is particularly preferred.

[0072] The amount of the antioxidant is preferably 0 parts by mass or more, more preferably 0.1 parts by mass or more, particularly preferably 0.5 parts by mass or more, and preferably 30 parts by mass or less, and particularly preferably 10 parts by mass or less, per 100 parts by mass of the halogen-based rubber. A content exceeding 30 parts by mass is undesirable because it will cause blooming.

[0073] The content of the above-mentioned other components other than the anti-aging agent is preferably 0 parts by mass or more, more preferably 1.0 part by mass or more, and preferably 150 parts by mass or less, and more preferably 100 parts by mass or less, per 100 parts by mass of the above-mentioned halogen-based rubber.

[0074] The rubber member of this disclosure is in contact with a corrosive substance. Part of the rubber member may be in contact with the corrosive substance, or the entire rubber member may be in contact with the corrosive substance.

[0075] The above-mentioned corrosive substance may be any substance that is corrosive, and may be a substance that is corrosive to rubber, resin, metal, etc. Furthermore, the above-mentioned corrosive substance may be a liquid, solid, or gas. It is preferable that it be a liquid in which the effects of this disclosure are more pronounced.

[0076] The above-mentioned corrosive substance has an oxidation-reduction potential (vsNHE) of preferably -2.0V or higher, more preferably -1.0V or higher, even more preferably -0.5V or higher, and also preferably 3.0V or lower, more preferably 2.5V or lower, and even more preferably 2.1V or lower.

[0077] Examples of the corrosive substances mentioned above include acidic substances, basic substances, oxidizing substances, organic solvents, and saltwater.

[0078] Examples of the above-mentioned acidic substances include chemical solutions with a pH of 6 or less, preferably 5 or less, and more preferably 4 or less. Specifically, these include acids such as sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, and hydrochloric acid; mixtures of these acids; and mixtures of these acids with other substances (such as hydrogen peroxide). In particular, at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is preferred, and at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is more preferred.

[0079] Examples of the above basic substances include chemical solutions with a pH of 8 or higher, preferably 9 or higher, and more preferably 10 or higher. Specifically, TMAH([(CH3)4N] + [OH] -Examples include sodium hydroxide aqueous solution, ammonia and other bases; mixtures of these bases; and mixtures of these bases with other substances (such as hydrogen peroxide). In particular, TMAH([(CH3)4N] + [OH] - Preferably, at least one selected from the group consisting of aqueous sodium hydroxide solution, aqueous ammonia solution, and a mixed chemical solution of hydrogen peroxide solution and aqueous ammonia solution.

[0080] Examples of basic substances include chemical solutions with an oxidation-reduction potential (vsNHE) of -2.0 to 0V, preferably -1.0 to 0V, and more preferably -0.5 to 0V. Specifically, TMAH([(CH3)4N] + [OH] - Examples include basic substances such as aqueous sodium hydroxide solution, aqueous ammonia, hydroxylamine, hydrazine, hydrogen water, and sodium sulfite; and mixtures of these basic substances with other substances. In particular, TMAH([(CH3)4N] + [OH] - Preferably, at least one selected from the group consisting of aqueous sodium hydroxide solution, aqueous ammonia solution, and a mixed chemical solution of hydrogen peroxide solution and aqueous ammonia solution.

[0081] Examples of the oxidizing substances mentioned above include chemical solutions with an oxidation-reduction potential (vsNHE) of 0 to 3.0 V, preferably 0.5 to 2.5 V, and more preferably 1.0 to 2.1 V. Specifically, these include sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide, and mixtures of these oxidizing substances with other substances (such as hydrofluoric acid). In particular, at least one selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide solution, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid is preferred, and at least one selected from the group consisting of nitric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid is more preferred.

[0082] Examples of the above-mentioned organic solvents include esters such as methyl acetate, ethyl acetate, propyl acetate, n-butyl acetate, and tert-butyl acetate; ketones such as acetone, methyl ethyl ketone, and cyclohexanone; aliphatic hydrocarbons such as hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, and mineral spirits; aromatic hydrocarbons such as benzene, toluene, xylene, naphthalene, and solvent naphtha; alcohols such as methanol, ethanol, isopropyl alcohol, tert-butanol, and ethylene glycol monoalkyl ethers; cyclic ethers such as tetrahydrofuran, tetrahydropyran, and dioxane; nitriles such as acetonitrile and propionitrile; amides such as dimethyl sulfoxide, N,N-dimethylformamide, and N,N-dimethylacetamide; halogenated hydrocarbons such as dichloromethane, dichloroethane, and chloroform, and mixtures thereof. Among these, alcohols are preferred, and isopropyl alcohol is more preferred.

[0083] The corrosive substance is preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and brine; more preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, and organic solvents; and even more preferably at least one selected from the group consisting of acidic substances and basic substances.

[0084] The corrosive substance mentioned above is preferably at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, mixed acid of hydrofluoric acid and nitric acid, mixed chemical solution of hydrogen peroxide and hydrochloric acid, mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, aqueous sodium hydroxide solution, aqueous ammonia, mixed chemical solution of hydrogen peroxide and aqueous ammonia, isopropyl alcohol, and saline solution. More preferably, at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, mixed acid of hydrofluoric acid and nitric acid, mixed chemical solution of hydrogen peroxide and hydrochloric acid, mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, aqueous sodium hydroxide solution, mixed chemical solution of hydrogen peroxide and aqueous ammonia, and isopropyl alcohol. Even more preferably, at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid, mixed acid of hydrofluoric acid and nitric acid, mixed chemical solution of hydrogen peroxide and sulfuric acid, and TMAH.

[0085] The rubber member of this disclosure may have only a portion (layer) containing the halogen-based rubber, or it may have a portion (layer) containing the halogen-based rubber and a portion (layer) other than the halogen-based rubber. From the viewpoint of ensuring corrosion resistance, it is preferable that at least a part of the surface that comes into contact with the corrosive substance is composed of a portion (layer) containing the halogen-based rubber, and it is more preferable that the entire surface that comes into contact with the corrosive substance is composed of a portion (layer) containing the halogen-based rubber.

[0086] The rubber member of this disclosure is used as at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, medical materials, semiconductor materials, and information and communication materials. Among the above members, semiconductor materials are preferred due to their excellent corrosion resistance and low metal leaching, and semiconductor manufacturing equipment materials (articles for semiconductor manufacturing equipment) are more preferred.

[0087] Examples of building materials (construction materials) components include interior building materials such as baseboards, ceiling materials, and plumbing materials, as well as exterior building materials such as waterproofing sheets, water-stopping materials, exterior wall materials, and roofing materials. Examples of mobility components mentioned above include parts used in ferries, railways, automobiles, motorcycles, drones, robots, and the like. Examples of the above-mentioned aerospace components include exterior and interior materials for aircraft and rockets, wire insulation materials, cable protection materials, jet engines, cabin interior materials, and their components. Examples of the above-mentioned medical components include piping materials, chemical containers, sterilization containers, medical devices, laboratory and analytical instruments, and packaging materials. Examples of semiconductor materials mentioned above include process materials used in semiconductor manufacturing and components for semiconductor manufacturing-related equipment. Examples of the above-mentioned information and communication components include parts for devices such as wireless LAN transmission and reception circuits, circuit boards, and parts for devices such as optical communications.

[0088] Examples of components of this disclosure include containers, piping, nozzles, tubes, tanks, fittings, valves, pumps, housings, spin chucks, O-rings, packings, gaskets, washers, sealing materials, nuts, bolts, films, bottles, wire insulation, hoses, pipes, sheets, rollers, cocks, connectors, filter housings, filter cages, flow meters, wafer carriers, wafer boxes, and the like.

[0089] The rubber components of this disclosure are suitably applicable to at least one selected from the group consisting of containers, piping, nozzles, tubes, tanks, fittings, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials, given that corrosion resistance is required. In particular, it can be suitably applied to at least one selected from the group consisting of containers, pipes, nozzles, tubes, tanks, fittings, valves, pumps, spin chucks, O-rings, gaskets, washers, and sealing materials, and is suitably applied to at least one selected from the group consisting of O-rings, packings, gaskets, and sealing materials, and is particularly suitably applied to O-rings. Furthermore, it can be suitably used in the above-mentioned piping, nozzles, tubes, O-rings, packings, gaskets, and sealing materials (preferably O-rings, packings, gaskets, and sealing materials, more preferably O-rings) within semiconductor manufacturing-related equipment.

[0090] The piping is not particularly limited, but in terms of shape, an inner diameter of 2 mm to 400 mm is preferred, 2 mm to 100 mm is more preferred, and 2 mm to 25 mm is particularly preferred. Examples include robust pipe types, flexible hoses that can be incorporated according to the installation space, and bellows pipes that can be bent despite having a large diameter. Furthermore, the inside of the piping may be made of a material that is clean (less contamination of the chemical solution by extracted ions) and chemical resistant, and may be subjected to high-precision polishing that does not generate dust and does not disturb the liquid flow or gas flow. Depending on the type of chemical being used, such as organic solvents, antistatic properties may be required to prevent static electricity buildup. In such cases, conductive fillers (carbon black, carbon nanotubes, etc.) may be added to provide antistatic properties, provided that cleanliness is not compromised.

[0091] While there are no particular limitations on the nozzle itself, the tip may be precisely machined to match the size and shape of the part. In addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0092] The tube is not particularly limited, but the tube diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and especially preferably 2 to 25 mm. A material with stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (less contamination of the chemical solution by extracted ions) is used. In addition, depending on the chemical solution to be flowed, such as organic solvents, antistatic properties may be required to prevent electrostatic charge buildup, and conductive fillers (carbon black, carbon nanotubes, etc.) may be added to provide antistatic properties within a range that does not worsen cleanliness.

[0093] The containers and tanks are not particularly limited, but they may be subjected to precision cleaning (water washing, acetic acid immersion, hydrochloric acid immersion, nitric acid immersion, wiping cleaning, pure water washing, etc.) to remove dirt and residue. Packaging after cleaning may be carried out in a cleanroom or clean booth environment.

[0094] The fittings and valves are not particularly limited, but they are required to be oil-free, particle-free, dead space-free, and externally leak-free, and their size is preferably in the range of Φ3.2mm to 40mm, and more preferably in the range of Φ3.2 to 12.7mm.

[0095] While not particularly limited, a pump may sometimes require retractability.

[0096] While not particularly limited, spin chucks may require hardness, corrosion resistance, and dimensional stability, and conductivity may be added.

[0097] While there are no particular limitations on the O-ring and sealing material, the material properties that are required include excellent elasticity, good compression set, high wear resistance, excellent heat resistance, resistance to the liquids and gases to which it is applied, and a long lifespan. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore high heat resistance, chemical resistance, and plasma resistance are required. The compression set is preferably 25% or less at 100°C for 72 hours, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less.

[0098] While there are no particular limitations on packings and gaskets, they are often required to have good compression set, a low coefficient of friction, and excellent wear resistance. To prevent leaks, heat resistance, cold resistance, pressure resistance, and chemical resistance are also sometimes required. The compression set is preferably 25% or less at 100°C for 72 hours, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less.

[0099] While washers are not particularly limited, they are often intended for use in cleanrooms and similar environments, requiring durability, corrosion resistance, and rust prevention.

[0100] The components of this disclosure can be used, for example, for the following purposes: <Building materials> Exterior materials for furniture, interior building materials for walls, ceilings, floors, etc. Exterior building materials such as siding, fences, roofs, gates, and gable boards; Window frames, doors, handrails, thresholds, lintels, etc. - decorative surface materials; Membrane materials (roofing materials, ceiling materials, exterior wall materials, interior wall materials, covering materials, etc.) for membrane structures (sports facilities, horticultural facilities, atriums, etc.); Outdoor-use lumber (soundproof walls, windbreak fences, wave overhang fences, garage canopies, shopping malls, walkway walls, roofing materials); Building materials such as tent materials for tent warehouses, sunshade membranes, partial roofing materials for letting in light, window materials to replace glass, fire-resistant partition membranes, curtains, exterior wall reinforcement, waterproof membranes, smoke barriers, non-combustible transparent partitions, and road reinforcement; Agricultural films, weather-resistant covers for various roofing materials and side walls; Covering materials for glass products such as non-combustible fire-resistant safety glass; etc. Among these, given the requirement for corrosion resistance, it is particularly suitable for use in membrane materials for membrane structures, outdoor paneling, tent materials for tent warehouses, sunshade membranes, partial roofing materials for letting in light, window materials as an alternative to glass, fire-resistant partition membranes, curtains, exterior wall reinforcement, waterproof membranes, smoke-proof membranes, non-combustible transparent partitions, road reinforcement and other building materials, agricultural films, and weather-resistant covers for various roofing materials and side walls. When using the components of this disclosure for the above applications, from the viewpoint of corrosion resistance and weather resistance, at least one halogenated rubber selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR) is preferred.

[0101] <Mobility> O-rings, tubes, gaskets, valve cores, hoses, seals, and diaphragms used in the fuel systems and peripheral equipment of automobiles (for example, injector O-rings, injector gaskets, fuel pump O-rings, diaphragms, fuel hoses, filler hoses, and evaporator hoses) (these may be for sour gasoline, alcohol fuel, or fuels containing gasoline additives such as methyl tert-butyl ether and amines). Hoses and sealing materials used in automatic transmission (AT) systems of automobiles (e.g., ATF hoses); Gaskets, shaft seals, valve stem seals, sealing materials, and hoses used in automobile engines and peripheral equipment (e.g., carburetor flange gaskets, engine head gaskets, metal gaskets, crankshaft seals, camshaft seals, valve stem seals, manifold packings, oil hoses); Oxygen sensor for automotive engines; Automotive components such as brake hoses, air conditioning hoses, radiator hoses, radiator tanks, chemical tanks, bellows, spacers, rollers, gasoline tanks, bumpers, door trims, instrument panels, wire insulation materials, and other automotive parts; O-rings, tubes, gaskets, valve cores, hoses, seals, and diaphragms used in the fuel systems and peripheral equipment of ships; Corrosion-preventive tapes for pipes, such as tapes used to wrap around pipes on ship decks; etc. Among these, due to the requirement of corrosion resistance, it can be particularly suitably used in O(square) rings, tubes, packings, hoses, and sealing materials used in the fuel systems and peripheral equipment of automobiles; hoses and sealing materials used in the automatic transmission systems of automobiles; other automobile components such as brake hoses, air conditioning hoses, radiator hoses, bellows, spacers, rollers, bumpers, door trims, and wire insulation materials; and O(square) rings, tubes, packings, valve cores, hoses, sealing materials, and diaphragms used in the fuel systems and peripheral equipment of ships. When using the components of this disclosure for the above applications, from the viewpoint of corrosion resistance and oil resistance, at least one halogenated rubber selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), brominated butyl rubber (BIIR), epichlorohydrin rubber (ECO), and chloroprene rubber (CR) is preferred.

[0102] <Aerospace> O-rings, tubes, packings, valve cores, hoses, seals, and diaphragms used in the fuel systems and peripheral equipment of aircraft and rockets; etc. Among these, due to the requirement of corrosion resistance, it can be particularly suitable for use in O-rings, tubes, packings, hoses, and sealing materials used in the fuel systems and peripheral equipment of aircraft and rockets. When using the components of this disclosure for the above applications, from the viewpoint of corrosion resistance and weather resistance, at least one halogenated rubber selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), brominated butyl rubber (BIIR), epichlorohydrin rubber (ECO), and chloroprene rubber (CR) is preferred.

[0103] <Medical> Medical infusion tubes, blood collection tubes, drainage tubes, catheters, catheter connectors, stents, pipes, fittings, tube connectors, valves, filters, and other piping materials; Liquid, powder, or solid drug containers such as packaging, bottles, bottle caps, vials, ampoules, pre-filled syringes, infusion bags, infusion bag connectors, sealed drug bags, press-through packages, and eye drop containers; Sample containers such as urine collection bags, test tubes for blood sampling, blood collection tubes, test cells, and specimen containers; Sterilization containers for medical instruments such as scalpels, forceps, gauze, and contact lenses; Housings for electronic devices such as medical sensors, cardiac devices, and pacemakers; Medical devices such as inhalation masks, syringes, syringe rods, injection needles, surgical trays, protective plugs, rubber stoppers, and endoscopes; Laboratory and analytical equipment such as beakers, petri dishes, flasks, test tubes, and centrifuge tubes; Medical optical components such as plastic lenses for medical examinations; Artificial organs and their components, such as denture bases, dentures, artificial hearts, artificial tooth roots, artificial bones, and artificial joints; etc. Among these, from the viewpoint of chemical resistance and heat resistance, it can be used particularly suitably for medical infusion tubes, blood collection tubes, drain tubes, catheters, piping, fittings, tube connectors, valves, bottles, bottle caps, vials, ampoules, pre-filled syringes, infusion bags, urine collection bags, test tubes for blood sampling, blood collection tubes, test cells, specimen containers, sterile containers, syringes, syringe rods, surgical trays, and protective stoppers. When using the components of this disclosure for the above applications, from the viewpoint of chemical resistance and heat resistance, at least one halogenated rubber selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR) is preferred.

[0104] <Information and Communication> Insulating boards for high-frequency circuits, insulating materials for connecting components, printed circuit boards; Bases and antenna covers for high-frequency vacuum tubes; Wire insulation material for coaxial cables, LAN cables, etc. Optical fiber coating material; LCD displays and other types of displays; Components for mobile phones; etc. Among these, due to the requirement of corrosion resistance, it can be particularly suitable for use in insulating boards for high-frequency circuits, insulating materials for connecting components, printed circuit boards; bases and antenna covers for high-frequency vacuum tubes; wire coverings for coaxial cables, LAN cables, etc.; and optical fiber coverings. When using the components of this disclosure for the above applications, from the viewpoint of corrosion resistance, at least one halogenated rubber selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR) is preferred.

[0105] <Semiconductors> Chemical transfer components for semiconductor factories and semiconductor manufacturing-related equipment, including chemical tanks, containers, housings, piping, O-rings, tubes, packings, valve cores, hoses, seals, rolls, gaskets, washers, diaphragms, nozzles, fittings, coatings, and inner linings for pipes; Drug stoppers and packaging films; Wastewater transport components such as tanks, containers, tubes, hoses, fittings, and nozzles; Containers, tubes, hoses, and other components for transporting high-temperature liquids; Steam piping components such as tubes and hoses for steam piping; etc. Among these, due to the requirement of corrosion resistance, it can be particularly suitably used in O-rings, tubes, packings, hoses, sealing materials, rolls, gaskets, diaphragms, and fittings for semiconductor manufacturing-related equipment. When using the components of this disclosure for the above applications, the halogenated rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0106] The semiconductor manufacturing equipment mentioned above includes photolithography equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, discam equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment / other manufacturing equipment (defect correction equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching equipment. Etching equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high-current ion implantation equipment, medium-current ion implantation equipment, high-energy ion implantation equipment), thin film formation equipment, CVD equipment (high-pressure CVD equipment, SACVD, reduced-pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, and other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor semiconductor equipment). Conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectrometer), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machine, bump plating equipment, back grinder tape application machine, back grinder, back grinder tape removal machine), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment) Examples include molding equipment, outer lead bonding equipment, flip-chip bonding equipment, packaging equipment (molding equipment, deburring equipment, soldering equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (proppers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (cold and heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life testing equipment).Related equipment for semiconductor manufacturing includes various transport systems (in-process wafer transport systems, inter-process wafer transport systems, stockers), pure water and chemical systems (pure water production systems, ultrafiltration systems, reverse osmosis systems, sterilization systems, chemical supply systems, slurry supply systems, chemical purification systems, wastewater treatment systems), various gas systems (gas generators, gas purification systems, gas mixing systems, gas detection systems, exhaust gas treatment systems), cleanroom systems (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying systems, flow control equipment, various taping systems, various packaging systems, measuring instruments for liquids and various gases).

[0107] Among these, semiconductor manufacturing equipment that uses corrosive substances within the device is not particularly limited, but from the perspective of utilizing the chemical resistance properties, photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), discam equipment), thin film formation / etching / cleaning and drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment / other manufacturing equipment (defect correction equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), washing Cleaning and drying equipment (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, reduced-pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), other thin-film deposition equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, cleaning equipment for CMP), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life testing equipment) are preferred. As related equipment for semiconductor manufacturing equipment, the following are preferred: pure water and chemical solution systems (chemical supply systems, slurry supply systems, chemical purification systems, wastewater treatment systems), various gas systems (gas generators, gas purification systems, gas mixing systems, gas detection systems, exhaust gas treatment systems), cleanroom systems (thermal chambers, environmental testing equipment), and other manufacturing-related equipment (various jig cleaning and drying systems, flow control equipment, various packaging systems, measuring instruments for liquids and various gases).

[0108] As described above, the rubber member of this disclosure can be suitably used as a component (article for semiconductor manufacturing equipment) for semiconductor manufacturing equipment, but due to its excellent chemical resistance, it is more suitable as a component constituting semiconductor manufacturing equipment in which chemicals are used, in particular as a component that comes into contact with chemicals.

[0109] The above-mentioned chemicals are not particularly limited, but examples include chemicals used in semiconductor manufacturing equipment. These chemicals can be used individually or in combination of two or more.

[0110] Specifically, the above-mentioned chemical is TMAH([(CH3)4N] + [OH] - Examples include at least one selected from the group consisting of ), sulfuric acid, aqueous sodium hydroxide solution, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, H2O2, and H2O), SC2 (a mixture of HCl, H2O2, and H2O), phosphoric acid, and hydrochloric acid. Among these, TMAH, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM, SC1, SC2, phosphoric acid, and hydrochloric acid are preferred, and TMAH, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, and SPM are more preferred.

[0111] Other examples of the above-mentioned chemicals include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen / halogen gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0112] Examples of the silicon-based gases mentioned above include monosilane, dichlorosilane, trichloride silane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the above-mentioned arsenic gases include arsine, arsenic(III) fluoride, arsenic(V) fluoride, arsenic(III) chloride, and arsenic(V) chloride. Examples of the phosphorus-based gases mentioned above include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gases mentioned above include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the above-mentioned metal hydride gases include hydrogen selenide, monogermane, hydrogen telluride, styvin, and tin hydride. Examples of the above-mentioned metal alkyl gases include trialkylgallium and trialkylindium. Examples of the above-mentioned halogenated hydrocarbon gases include methane tetrafluoride, methane trifluoride, methane difluoride, propane hexafluoride, propane octafluoride, and cyclobutane octafluoride. Examples of the above-mentioned halogen and halide gases include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gases mentioned above include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, nitrous oxide, monosilane, and cyclobutane octafluoride are preferred, and ammonia gas, nitrogen trifluoride, and nitrous oxide are more preferred.

[0113] The above-mentioned semiconductor manufacturing equipment component (semiconductor manufacturing equipment article) may have only a portion (layer) containing the halogen-based rubber, or it may have a portion (layer) containing the halogen-based rubber and other portions (layers). From the viewpoint of ensuring chemical resistance, it is preferable that at least a part of the surface that comes into contact with the chemical is composed of a portion (layer) containing the halogen-based rubber, and it is more preferable that the entire surface that comes into contact with the chemical is composed of a portion (layer) containing the halogen-based rubber.

[0114] The rubber member of this disclosure is preferably one in which a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed for one week in each of the four chemical solutions (1), (3), (5), and (6) described later, and the relative mass after immersion, with the mass before immersion set to 100, is between 60 and 140. Members that satisfy this requirement have excellent corrosion resistance. The above relative value is more preferably 85 or higher, even more preferably 90 or higher, even more preferably 95 or higher, particularly preferably 98 or higher, and more preferably 120 or lower, even more preferably 110 or lower, even more preferably 108 or lower, and particularly preferably 105 or lower. Ideally (most preferably) it is 100.

[0115] It is more preferable that, when a test piece of the rubber member of this disclosure (size: 10 mm × 50 mm × 2 mm) is immersed in each of the nine chemical solutions (1) to (9) described later for one week, the relative mass after immersion, with the mass before immersion set to 100, falls within the range described above.

[0116] Preferably, the rubber member of this disclosure is such that when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the nine chemical solutions (1) to (9) described below for one week, and the mass after immersion is calculated with the mass before immersion set to 100, the average of the relative values ​​for the nine chemical solutions is 80 or more and 120 or less, with a standard deviation of 20 or less. Members that satisfy this requirement have excellent corrosion resistance. The average of the above relative values ​​is more preferably 85 or higher, even more preferably 90 or higher, even more preferably 95 or higher, particularly preferably 97 or higher, and more preferably 110 or lower, even more preferably 108 or lower, even more preferably 107 or lower, even more preferably 106 or lower, even more preferably 105 or lower, and particularly preferably 104 or lower. Ideally (most preferably) it is 100. The standard deviation of the above relative values ​​is more preferably 15 or less, even more preferably 10 or less, even more preferably 9 or less, even more preferably 7 or less, even more preferably 6 or less, and particularly preferably 5 or less. It may also be 0 or greater, 1 or greater, or 3 or greater. Ideally (most preferably) it is 0.

[0117] The chemical solution used for immersing the above test specimens is as follows: (1)25% by mass TMAH([(CH3)4N] + [OH] - (80℃) (2) 100% by mass isopropyl alcohol (80°C) (3) 49% by mass hydrofluoric acid (70℃) (4) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid in a volume ratio of 1:5) (20℃) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by mass in a volume ratio of 1:100) (20℃) (6) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C) (7) SC1 (a mixture of 25-28% by mass of aqueous ammonia, 30-36% by mass of aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) (8) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) (9)85% by mass phosphoric acid (80℃)

[0118] The rubber member of this disclosure preferably has a metal leaching amount (by mass) of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) of 30 ppb or less, more preferably 15 ppb or less, even more preferably 4 ppb or less, even more preferably 3.5 ppb or less, even more preferably 3.2 ppb or less, and particularly preferably 1 ppb or less when a test piece of the member (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week, with each element having a metal leaching amount (by mass) of 30 ppb or less, more preferably 15 ppb or less, even more preferably 4 ppb or less, even more preferably 3.5 ppb or less, even more preferably 3.2 ppb or less, and especially preferably 1 ppb or less.

[0119] Preferably, the rubber member of this disclosure has a metal elution amount (by mass) of two elements (Ca and Pb) of 10,000 ppb or less when a test piece of the member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week. The amount of Ca eluted is more preferably 100 ppb or less, even more preferably 80 ppb or less, even more preferably 30 ppb or less, even more preferably 27 ppb or less, and particularly preferably 25 ppb or less. The amount of Pb eluted is more preferably 6000 ppb or less, even more preferably 100 ppb or less, even more preferably 30 ppb or less, even more preferably 25 ppb or less, even more preferably 23 ppb or less, and particularly preferably 10 ppb or less.

[0120] Preferably, the rubber member of this disclosure has a metal elution amount (by mass) of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) of 10,000 ppb or less when a test piece of the member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week.

[0121] Ideally (most preferably) the amount of any of the above-mentioned elements to be eluted is 0 ppb, but it may also be greater than or equal to the detection limit.

[0122] The rubber members of this disclosure can be manufactured, for example, by molding and crosslinking a rubber composition obtained by kneading an uncrosslinked halogen-based rubber with a crosslinking agent, and optionally the above-mentioned acid acceptor, processing aid, crosslinking aid, reinforcing material (filler), plasticizer, and other components.

[0123] The mixing method is not particularly limited, and known methods using a closed-type mixer, a roller kneader, etc., can be employed.

[0124] The molding method is not particularly limited, and known methods such as compression molding, injection molding, transfer molding, and extrusion molding can be employed.

[0125] The crosslinking method is not particularly limited, and known methods such as hot air crosslinking, microwave crosslinking, electron beam crosslinking, and hot pressing can be employed. The crosslinking temperature depends on the crosslinking agent, but is preferably 100°C or higher, more preferably 130°C or higher, even more preferably 140°C or higher, and also preferably 250°C or lower, more preferably 200°C or lower, even more preferably 190°C or lower, and even more preferably 180°C or lower. The crosslinking time depends on the crosslinking agent, but for example, 5 minutes or more is preferred, 10 minutes or more is more preferred, 15 minutes or more is even more preferred, 20 minutes or more is even more preferred, 300 minutes or less is preferred, 200 minutes or less is more preferred, 150 minutes or less is even more preferred, 120 minutes or less is even more preferred, and 60 minutes or less is particularly preferred.

[0126] This disclosure also relates to semiconductor manufacturing equipment fitted with the rubber component of this disclosure described above. The use of the component of this disclosure can provide the equipment with excellent corrosion resistance.

[0127] The semiconductor manufacturing equipment described in this disclosure is preferably the semiconductor manufacturing equipment and related equipment described above. Furthermore, the semiconductor manufacturing equipment described in this disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing equipment and related equipment for semiconductor manufacturing equipment.

[0128] The above semiconductor manufacturing equipment is at least one selected from the group consisting of photolithography equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment. The above-mentioned semiconductor manufacturing equipment-related equipment is preferably at least one selected from the group consisting of pure water / chemical solution equipment, gas equipment, cleanroom equipment, and manufacturing-related equipment.

[0129] The above-mentioned photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a discam apparatus. The above-mentioned thin-film formation, etching, cleaning, and drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrubbing cleaning apparatus. The above inspection and evaluation equipment and manufacturing equipment are defect correction devices. The above-mentioned resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus. The etching apparatus described above is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus. The above-mentioned washing and drying apparatus is at least one selected from the group consisting of a wet washing apparatus, a scrubbing washing apparatus, and a drying apparatus. The above-mentioned CVD apparatus is at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, and ALD apparatus. The thin-film formation apparatus described above is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus. The above-mentioned CMP equipment is at least one selected from the group consisting of a CMP device and a CMP cleaning device. The above-mentioned processing apparatus is a bump plating apparatus, The above-mentioned aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus. The above inspection device is a life test device. The above-mentioned pure water / chemical solution system is at least one selected from the group consisting of a chemical supply system, a slurry supply system, a chemical purification system, and a waste liquid treatment system. The above-mentioned gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device. The above-mentioned cleanroom equipment is at least one selected from the group consisting of a thermal chamber and an environmental testing apparatus. The above-mentioned manufacturing-related equipment is preferably at least one selected from the group consisting of jig cleaning and drying equipment, flow rate control equipment, packaging equipment, and liquid and gas measuring equipment.

[0130] Although embodiments have been described above, it should be understood that various modifications to the form and details are possible without departing from the spirit and scope of the claims. [Examples]

[0131] The present disclosure will now be further described with reference to examples, but the present disclosure is not limited to these examples.

[0132] Various physical properties were measured using the following method.

[0133] <Chemical resistance (corrosion resistance) test> The rubber sheets obtained in the examples and comparative examples were cut to a size of 10 mm × 50 mm × 2 mm to be used as test specimens. The test specimens were dried at 60°C for 2 hours. After drying, the mass of the test specimen was measured under room temperature (20°C) conditions before immersion. After measurement, the test specimens were completely immersed in each of the following chemical solutions (1) to (9) and kept there for one week (168 hours). After holding, the test specimens were washed with pure water, surface water droplets were wiped off, and they were dried at 60°C for 12 hours. The mass of the immersed test specimens was then measured under room temperature (20°C) conditions. From the measured masses before and after immersion, the relative value of the mass after immersion was calculated, with the mass before immersion set to 100. Furthermore, the mean and standard deviation of the immersion mass (relative value) for the nine types (1) to (9) were calculated. (Medicinal solution) (1)25% by mass TMAH([(CH3)4N] + [OH] - (80℃) (2) 100% by mass IPA (isopropyl alcohol) (80℃) (3) 49% by mass hydrofluoric acid (70℃) (4) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid in a volume ratio of 1:5) (20℃) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by mass in a volume ratio of 1:100) (20℃) (6) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C) Redox potential (vsNHE): 1.8V (7) SC1 (a mixture of 25-28% by mass aqueous ammonia, 30-36% by mass aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) Redox potential (vsNHE): 1.2V (8) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) Redox potential (vsNHE): 1.6V (9)85% by mass phosphoric acid (80℃)

[0134] <Metal elution test> The rubber sheets obtained in the examples and comparative examples were cut to a size of 10 mm × 50 mm × 2 mm to be used as test specimens. As a pre-cleaning step, the test specimens were immersed in 3.6% by mass hydrochloric acid for 1 hour, followed by rinsing with pure water. Then, the test specimens were immersed in 100 mL of 3.6% by mass hydrochloric acid at 23°C. One week (168 hours) after the start of immersion, a portion of each immersion solution was withdrawn, and the metal concentrations of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) were measured using ICP-MSI (Agilent 8900, Agilent Technologies) to determine the amount of metal leached.

[0135] The materials used in the examples and comparative examples are shown below. (rubber) TOSO-CSM TS-530: Tosoh Corporation chlorosulfonated ethylene rubber (CSM), chlorine content: 35% by mass, sulfur content: 1.0% by mass, Mooney viscosity: ML 1+4 (100℃): 56 TOSO-CSM TS-830: Tosoh Corporation chlorosulfonated ethylene rubber (CSM), chlorine content: 36% by mass, sulfur content: 1.0% by mass, Mooney viscosity: ML 1+4 (100℃): 90 Elastrene 351A: Chlorinated polyethylene (CM) manufactured by Resonaq, chlorine content: 34.0-37.0% by mass, Mooney viscosity ML 1+4 (121℃): 90 Elastrene 401A: Chlorinated polyethylene (CM) manufactured by Resonaq, chlorine content: 38.0-41.0% by mass, Mooney viscosity ML 1+4 (121℃): 115 Zetpol 2001L: Hydrogenated nitrile rubber (HNBR) manufactured by Zeon Corporation. KE-951-U: Silicone rubber (Q) manufactured by Shin-Etsu Chemical Co., Ltd. (Carbon Black) Seast GS: Manufactured by Tokai Carbon Co., Ltd., SRF carbon black Seast G-SO: Manufactured by Tokai Carbon Co., Ltd., FEF Carbon Black (Crosslinking agent) Perkmill D-40: Manufactured by NOF Corporation, dicumyl peroxide Suncellar 22-C: Manufactured by Sanshin Chemical Industry Co., Ltd., 2-Imidazolin-2-thiol (ETU) Peroximon F-40: Manufactured by NOF Corporation, α,α'-bis(t-butylperoxy)diisopropylbenzene C-8: 2,5-dimethyl-2,5-bis(t-butylperoxy)hexane, manufactured by Shin-Etsu Chemical Co., Ltd. (Vulcanization accelerator) TAIC (Triallyl Isocyanurate): Manufactured by Mitsubishi Chemical Corporation. Noxellar DM: Dibenzothiazole disulfide (MBTS), manufactured by Ouchi Shinko Chemical Industry Co., Ltd. Noxellar TRA: Manufactured by Ouchi Shinko Chemical Industry Co., Ltd., dipentamethylenethuram tetrasulfide (DPTT) Noxellar DT: Manufactured by Ouchi Shinko Chemical Industry Co., Ltd., di-o-tolylguanidine (DOTG) (Acid absorber) Lissage: Manufactured by Mitsui Mining & Smelting Co., Ltd., Lead Oxide (PbO) JP-200: NISSO-PB JP-200 manufactured by Nippon Soda Co., Ltd., epoxidized polybutadiene, number average molecular weight: 2200 g / mol, epoxy equivalent: 210-240 (Processing aid) Splendor R-300V: Manufactured by Kao Corporation, contains fatty acid ester. (Cross-linking agent) Nocrack CD: Manufactured by Ouchi Shinko Chemical Industry Co., Ltd., 4,4'-bis(α,α-dimethylbenzyl)diphenylamine Nocrac MBZ: Zinc salt of 2-mercaptobenzimidazole, manufactured by Ouchi Shinko Chemical Industry Co., Ltd.

[0136] Examples 1-9 and Comparative Example 1 According to the mixing ratios shown in Tables 1-3, kneading (A kneading) was performed using a closed-type mixer (Laboplastmill Banbury type mixer B-250, manufactured by Toyo Seiki Seisakusho Co., Ltd.) for 5 minutes from a predetermined starting temperature. Next, kneading (B kneading) was performed using an electric heated high-temperature roll press (manufactured by Ikeda Machinery Industry Co., Ltd.) at 50±10℃. After kneading, crosslinking was performed under predetermined conditions using an electric heated press (manufactured by Otake Machinery Industry Co., Ltd.) to produce rubber sheets (rubber components). Chemical resistance tests were conducted using the obtained rubber sheets. Metal elution tests were also performed for Examples 1 to 9. The results are shown in Tables 1 to 3.

[0137] Comparative Example 2 According to the mixing ratios shown in Table 4, the mixture was kneaded using a roll mill (B kneading) at 50±10℃ using an electrically heated high-temperature roll mill (manufactured by Ikeda Machinery Industry Co., Ltd.). After kneading, the mixture was pressed at 165℃ for 10 minutes using an electric heat press (manufactured by Otake Machinery Industry Co., Ltd.), followed by secondary vulcanization at 200℃ for 4 hours to produce rubber sheets (rubber components). Chemical resistance tests were conducted using the obtained rubber sheets. The results are shown in Table 4.

[0138] [Table 1]

[0139] [Table 2]

[0140] [Table 3]

[0141] [Table 4]

[0142] The rubber member in the example was suitable for use as a component (part) in semiconductor manufacturing equipment where chemicals are used.

Claims

1. A rubber member comprising a halogenated rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine, wherein the halogenated rubber is at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber, is crosslinked with a peroxide crosslinking agent and / or a sulfur-based crosslinking agent, and is fitted with a rubber member that comes into contact with corrosive substances, for semiconductor manufacturing related equipment.

2. The semiconductor manufacturing apparatus according to claim 1, wherein the rubber member comprises at least one acid acceptor selected from the group consisting of lead compounds and epoxy compounds.

3. The semiconductor manufacturing apparatus according to claim 2, wherein the acid acceptor is at least one selected from the group consisting of lead oxide and epoxidized polybutadiene.

4. The semiconductor manufacturing apparatus according to claim 2 or 3, wherein the rubber member contains 1 to 35% by mass of the acid absorber relative to the halogen-based rubber.

5. The semiconductor manufacturing apparatus according to claim 2 or 3, wherein the rubber member contains 10 to 30% by mass of the acid absorber relative to the halogen-based rubber.

6. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the rubber member is at least one selected from the group consisting of a container, piping, nozzle, tube, tank, fittings, valve, pump, spin chuck, O-ring, packing, gasket, washer, and sealing material.

7. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the rubber member is at least one selected from the group consisting of a container, piping, nozzle, tube, tank, fitting, valve, pump, spin chuck, O-ring, gasket, washer, and sealing material.

8. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the pH of the corrosive substance is 6 or less or 8 or more.

9. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the oxidation-reduction potential (vsNHE) of the corrosive substance is -2.0 to 3.0 V.

10. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and brine.

11. The semiconductor manufacturing apparatus according to claim 10, wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid.

12. The basic substance is TMAH([(CH ３ ) ４ N] ＋ [OH] － The semiconductor manufacturing apparatus according to claim 10, wherein the chemical is selected from the group consisting of a sodium hydroxide aqueous solution, ammonia water, and a mixed chemical solution of hydrogen peroxide water and ammonia water.

13. The corrosive substance is hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH ([(CH ３ ) ４ N] ＋ [OH] － The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the liquid is at least one selected from the group consisting of sodium hydroxide aqueous solution, a mixed chemical solution of hydrogen peroxide and ammonia water, and isopropyl alcohol.

14. A semiconductor manufacturing-related apparatus according to any one of claims 1 to 3, wherein a chemical is used within the apparatus.

15. A semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the following four chemical solutions for one week, and the relative value of the mass after immersion, with the mass before immersion set to 100, is 60 or more and 140 or less in each case. (Medicinal solution) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] － (80℃) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid by mass and 69-71% nitric acid by mass in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C)

16. A semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the following nine chemical solutions for one week, and the relative mass after immersion is calculated with the mass before immersion set to 100, and the average of the relative masses for the nine chemical solutions is 80 or more and 120 or less, with a standard deviation of 20 or less. (Medicinal solution) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] － (80℃) 100% by mass isopropyl alcohol (80°C) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid in a volume ratio of 1:5) (20°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid by mass and 69-71% nitric acid by mass in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C) SC1 (a mixture of 25-28% by mass of aqueous ammonia, 30-36% by mass of aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide solution, and deionized water in a volume ratio of 1:1:4) (70°C) 85% by mass phosphoric acid (80°C)

17. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the amount of metal leaching of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) is 30 ppb or less when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week.

18. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week, the amount of metal leaching of two elements (Ca, Pb) is 10,000 ppb or less for each element.

19. A semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week, the amount of metal leaching of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 10,000 ppb or less for each element.

20. A semiconductor manufacturing-related apparatus according to any one of claims 1 to 3, which is at least one selected from the group consisting of semiconductor manufacturing equipment and related equipment for semiconductor manufacturing equipment.

21. The semiconductor manufacturing apparatus is at least one selected from the group consisting of a photolithography apparatus, a thin film formation / etching / cleaning / drying apparatus, an inspection / evaluation apparatus / manufacturing apparatus, a resist processing apparatus, an etching apparatus, a cleaning / drying apparatus, a CVD apparatus, a thin film formation apparatus, a CMP apparatus, a processing apparatus, an aging apparatus, and an inspection apparatus. The semiconductor manufacturing-related apparatus according to claim 20, wherein the semiconductor manufacturing apparatus-related apparatus is at least one selected from the group consisting of a pure water / chemical solution apparatus, a gas apparatus, a cleanroom apparatus, and a manufacturing-related apparatus.

22. The photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a discam apparatus. The thin film formation, etching, cleaning, and drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrubbing cleaning apparatus. The aforementioned inspection and evaluation device / manufacturing device is a defect correction device, The resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus. The etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus. The washing and drying apparatus is at least one selected from the group consisting of a wet washing apparatus, a scrubbing washing apparatus, and a drying apparatus. The CVD apparatus is at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, and ALD apparatus. The thin film formation apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus. The CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus. The aforementioned processing apparatus is a bump plating apparatus, The aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus. The inspection device is a life test device, The aforementioned pure water / chemical solution system is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device. The gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device. The cleanroom apparatus is at least one selected from the group consisting of a thermal chamber and an environmental testing apparatus. The semiconductor manufacturing apparatus according to claim 21, wherein the manufacturing apparatus is at least one selected from the group consisting of a jig cleaning and drying apparatus, a flow rate control apparatus, a packaging apparatus, and liquid and gas measuring instruments.

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