Rubber components and semiconductor manufacturing-related equipment

Abstract

To provide a rubber member having excellent corrosion resistance and a semiconductor manufacturing-related device using the same.SOLUTION: Provided is a rubber member that includes an olefin-based rubber, where the rubber member is at least one member selected from the group consisting of building material members, mobility members, aerospace members, semiconductor members and information communication members, and where the rubber member comes into contact with a corrosive substance.SELECTED DRAWING: None

Description

[Technical Field]

[0001] This disclosure relates to rubber components and semiconductor manufacturing-related equipment. [Background technology]

[0002] It has been proposed to use a specific mixture of resin and rubber as a gasket for sealed batteries (see, for example, Patent Document 1). [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2008-7671 [Overview of the project] [Problems that the invention aims to solve]

[0004] This disclosure aims to provide a rubber component with excellent corrosion resistance and semiconductor manufacturing-related equipment using the same. [Means for solving the problem]

[0005] This disclosure (1) relates to a rubber member containing an olefin-based rubber, The rubber member is at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials. This is a rubber component that comes into contact with corrosive substances.

[0006] Disclosure (2) is the rubber member according to Disclosure (1), wherein the olefin rubber is at least one selected from the group consisting of ethylene-propylene-diene rubber, ethylene-propylene rubber, and butyl rubber.

[0007] Disclosure (3) is the rubber member according to Disclosure (2), wherein the ethylene-propylene-diene rubber and the ethylene content of the ethylene-propylene rubber are 50 to 70% by mass.

[0008] The present disclosure (4) is a rubber member in any combination with any one of the present disclosures (1) to (3) in which the diene monomer content of the olefin rubber is 0 to 5% by mass.

[0009] The present disclosure (5) is a rubber member in any combination with any one of the present disclosures (1) to (4) in which the Mooney viscosity (ML 1+4 (100 °C)) is 10 to 200.

[0010] The present disclosure (6) is a rubber member in any combination with any one of the present disclosures (1) to (5) containing 1 to 60% by mass of an olefin resin with respect to the olefin rubber.

[0011] The present disclosure (7) is a rubber member in any combination with any one of the present disclosures (1) to (5) containing 45 to 55% by mass of an olefin resin with respect to the olefin rubber.

[0012] The present disclosure (8) is the rubber member according to the present disclosure (6) or (7) in which the olefin resin is a polyethylene resin.

[0013] The present disclosure (9) is a rubber member in any combination with any one of the present disclosures (6) to (8) in which the olefin resin is at least one selected from the group consisting of high-density polyethylene having a density of 0.94 to 0.97 g / m 3 and ultra-high molecular weight polyethylene having a weight average molecular weight of 1.0 × 10 6 to 1.0 × 10 7 .

[0014] The present disclosure (10) is a rubber member in any combination with any one of the present disclosures (1) to (9) in which the olefin rubber is crosslinked by a peroxide crosslinking agent and / or a sulfur-based crosslinking agent.

[0015] The present disclosure (11) is a rubber member in any combination of any of the present disclosures (1) to (10), wherein the rubber member is at least one selected from the group consisting of containers, pipes, nozzles, tubes, tanks, fittings, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

[0016] Disclosure (12) is a rubber member in any combination of any of Disclosures (1) to (11), wherein the pH of the corrosive substance is 6 or less or 8 or more.

[0017] The present disclosure (13) is a rubber member in any combination of any of the present disclosures (1) to (12), wherein the oxidation-reduction potential (vsNHE) of the corrosive substance is -2.0 to 3.0 V.

[0018] Disclosure (14) is a rubber member in any combination of any of Disclosures (1) to (13), wherein the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents and brine.

[0019] The present disclosure (15) is a rubber member according to the present disclosure (14), wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid.

[0020] This disclosure (16) states that the basic substance is TMAH([(CH3)4N] + [OH] - The rubber member is the one described in (14) or (15) of this disclosure, which is at least one selected from the group consisting of an aqueous solution of sodium hydroxide, aqueous ammonia, and a mixed chemical solution of aqueous hydrogen peroxide and aqueous ammonia.

[0021] This disclosure (17) states that the corrosive substance is hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH([(CH3)4N] + [OH] -) It is a rubber member which is at least one selected from the group consisting of an aqueous sodium hydroxide solution, a mixed chemical solution of hydrogen peroxide water and ammonia water, and isopropyl alcohol, and is an arbitrary combination with any of the present disclosures (1) to (16).

[0022] The present disclosure (18) is a rubber member which is an arbitrary combination with any of the present disclosures (1) to (17), wherein the rubber member is a member for a semiconductor manufacturing related apparatus.

[0023] The present disclosure (19) is the rubber member described in the present disclosure (18), wherein the semiconductor manufacturing related apparatus is an apparatus in which chemicals are used.

[0024] The present disclosure (20) is a rubber member which is an arbitrary combination with any of the present disclosures (1) to (19), wherein test pieces of the rubber member (size: 10 mm × 50 mm × 2 mm) are immersed in each of the following 4 chemical solutions for 1 week, and the relative value of the mass after immersion with the mass before immersion being 100 is 50 or more and 150 or less in all cases. (Chemical solution) 25 mass% TMAH ([(CH3)4N] + [OH] - )(80 °C) 49 mass% hydrofluoric acid (70 °C) A mixed acid of hydrofluoric acid and nitric acid (a mixture of 49 mass% hydrofluoric acid and 69 - 71 mass% nitric acid with a volume ratio of 1:100) (20 °C) SPM (a mixture of 98 mass% sulfuric acid and 30 - 36 mass% hydrogen peroxide water with a volume ratio of 2:1) (80 °C)

[0025] The present disclosure (21) is a rubber member which is an arbitrary combination with any of the present disclosures (1) to (20), wherein when test pieces of the rubber member (size: 10 mm × 50 mm × 2 mm) are immersed in each of the following 9 chemical solutions for 1 week and the relative value of the mass after immersion with the mass before immersion being 100 is obtained, the average of the relative values for the 9 chemical solutions is 80 or more and 120 or less, and the standard deviation is 20 or less. (Chemical solution) 25 mass% TMAH ([(CH3)4N] + [OH] - )(80 °C) 100% by mass isopropyl alcohol (80℃) 49% by mass hydrofluoric acid (70℃) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid in a volume ratio of 1:5) (20℃) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by mass in a volume ratio of 1:100) (20℃) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C) SC1 (a mixture of 25-28% by mass of aqueous ammonia, 30-36% by mass of aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) 85% by mass phosphoric acid (80℃)

[0026] The present disclosure (22) is a rubber member in any combination of any of the present disclosures (1) to (21), wherein the amount of metal leaching of 15 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Ag, Cd, Pb) when a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week is 30 ppb or less for each of the 15 elements.

[0027] Disclosure (23) is a rubber member in any combination of any of Disclosures (1) to (22), wherein the amount of Zn metal leaching when a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week is 150 ppb or less.

[0028] The present disclosure (24) is a rubber member in any combination of any of the present disclosures (1) to (23), wherein the amount of metal leaching of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 150 ppb or less when a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week.

[0029] Disclosure (25) is a semiconductor manufacturing-related apparatus equipped with rubber members in any combination of any of Disclosures (1) to (24).

[0030] Disclosure (26) is a semiconductor manufacturing-related apparatus of Disclosure (25), which is at least one selected from the group consisting of semiconductor manufacturing equipment and semiconductor manufacturing equipment-related apparatus.

[0031] This disclosure (27) states that the semiconductor manufacturing apparatus is at least one selected from the group consisting of photolithography apparatus, thin film formation / etching / cleaning / drying apparatus, inspection / evaluation apparatus / manufacturing apparatus, resist processing apparatus, etching apparatus, cleaning / drying apparatus, CVD apparatus, thin film formation apparatus, CMP apparatus, processing apparatus, aging apparatus, and inspection apparatus. The semiconductor manufacturing equipment according to the present disclosure (26) is a semiconductor manufacturing equipment in which the semiconductor manufacturing equipment is at least one selected from the group consisting of a pure water / chemical equipment, a gas equipment, a cleanroom equipment, and manufacturing equipment.

[0032] This disclosure (28) states that the photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a discam apparatus. The thin film formation, etching, cleaning, and drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrubbing cleaning apparatus. The aforementioned inspection and evaluation device / manufacturing device is a defect correction device, The resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus. The etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus. The washing and drying apparatus is at least one selected from the group consisting of a wet washing apparatus, a scrubbing washing apparatus, and a drying apparatus. The CVD apparatus is at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, and ALD apparatus. The thin film formation apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus. The CMP device is at least one selected from the group consisting of a CMP device and a CMP cleaning device. The aforementioned processing apparatus is a bump plating apparatus, The aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus. The inspection device is a life test device, The aforementioned pure water / chemical solution system is at least one selected from the group consisting of a chemical supply system, a slurry supply system, a chemical purification system, and a waste liquid treatment system. The gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device. The cleanroom equipment is at least one selected from the group consisting of a thermal chamber and an environmental testing apparatus. The semiconductor manufacturing equipment of this disclosure (27) is at least one selected from the group consisting of a jig cleaning and drying device, a flow control device, a packaging device, and a liquid / gas measuring device. [Effects of the Invention]

[0033] This disclosure provides a rubber component with excellent corrosion resistance and semiconductor manufacturing-related equipment using the same. [Modes for carrying out the invention]

[0034] The following provides a detailed explanation of this disclosure.

[0035] This disclosure relates to a rubber member containing an olefin-based rubber, wherein the rubber member is at least one selected from the group consisting of building materials, mobility components, aerospace components, semiconductor components, and information and communication components, and is a rubber member that comes into contact with corrosive substances. The rubber material of this disclosure has excellent corrosion resistance (particularly chemical resistance).

[0036] The rubber material of this disclosure also exhibits excellent compression set characteristics and can suppress metal leaching.

[0037] The rubber components of this disclosure include olefin-based rubber. Olefin-based rubber is rubber that contains constituent units derived from olefins as its main constituent units.

[0038] Examples of the above-mentioned olefin-based rubbers include ethylene-α-olefin-nonconjugated diene rubbers such as ethylene-propylene-diene rubber (EPDM); ethylene-α-olefin rubbers such as ethylene-propylene rubber (EPM); butyl rubber (IIR); isoprene rubber (IR); cyclopentene rubber (CR); butadiene rubber (BR); natural rubber (NR); styrene-butadiene rubber (SBR), etc., and one or more of these can be used. As the olefin-based rubber mentioned above, at least one selected from the group consisting of ethylene-α-olefin-non-conjugated diene rubber, ethylene-α-olefin rubber, and butyl rubber is preferred in terms of further improving corrosion resistance and compression set characteristics, and further suppressing metal elution; at least one selected from the group consisting of ethylene-α-olefin-non-conjugated diene rubber and ethylene-α-olefin rubber is more preferred; and ethylene-α-olefin rubber is even more preferred. Furthermore, from a similar viewpoint, at least one selected from the group consisting of ethylene-propylene-diene rubber, ethylene-propylene rubber, and butyl rubber is preferred, at least one selected from the group consisting of ethylene-propylene-diene rubber and ethylene-propylene rubber is more preferred, and ethylene-propylene rubber is even more preferred.

[0039] Examples of the α-olefins mentioned above include propylene, 1-butene, 1-pentene, 1-hexene, 1-heptene, 1-octene, 1-nonene, and 1-decene, and one or more of these can be used. Among these, propylene, 1-butene, and 1-hexene are preferred.

[0040] Examples of the above non-conjugated dienes include chain-like non-conjugated dienes such as 1,4-hexadiene, 1,6-octadiene, 2-methyl-1,5-hexadiene, 6-methyl-1,5-heptadiene, and 7-methyl-1,6-octadiene; dicyclopentadiene, vinylcyclohexene, cyclohexadiene, methyltetrahydroindene, 5-vinylnorbornene, 5-ethylidene-2-norbornene, and 5-methylene-2-norbornene. Examples include cyclic non-conjugated dienes such as 5-isopropylidene-2-norbornene and 6-chloromethyl-5-isopropenyl-2-norbornene; and trienes such as 2,3-diisopropylidene-5-norbornene, 2-ethylidene-3-isopropylidene-5-norbornene, 2-propenyl-2,2-norbornadiene, 1,3,7-octatriene, and 1,4,9-decatriene, and one or more of these can be used. Among these, cyclic non-conjugated dienes and 1,4-hexadiene are preferred.

[0041] The above-mentioned olefin-based rubber preferably has a diene monomer content of 20% by mass or less, more preferably 10% by mass or less, even more preferably 7% by mass or less, even more preferably 5% by mass or less, and may also be 0% by mass or more, in terms of further improving corrosion resistance and compression set characteristics and further suppressing metal elution. It is also preferable that the amount of diene monomer is 0% by mass (i.e., no diene monomer is present). The above diene monomer amounts are measured in accordance with ASTM D 6047.

[0042] When the above-mentioned olefin-based rubber is rubber containing ethylene units, it is preferable that the amount of ethylene in the olefin-based rubber be 30% by mass or more, more preferably 40% by mass or more, even more preferably 45% by mass or more, even more preferably 50% by mass or more, even more preferably 55% by mass or more, and particularly preferable that it be 60% by mass or more, in order to further improve corrosion resistance and compression set characteristics and to further suppress metal elution. Furthermore, the amount of ethylene may be 90% by mass or less, preferably 85% by mass or less, more preferably 80% by mass or less, even more preferably 75% by mass or less, and particularly preferable that it be 70% by mass or less. The above ethylene amount is measured in accordance with ASTM D 3900.

[0043] The above olefin-based rubber offers improved corrosion resistance and compression set characteristics, and further suppresses metal leaching, resulting in a Mooney viscosity (ML). 1+4 The temperature (at 100°C) is preferably 10 or higher, more preferably 20 or higher, even more preferably 30 or higher, and also preferably 40, more preferably 200 or lower, and even more preferably 170 or lower. Also, Mooney viscosity (ML 1+4 The temperature (at 125°C) is preferably 10 or higher, more preferably 20 or higher, even more preferably 30 or higher, and also preferably 40, more preferably 200 or lower, and even more preferably 170 or lower. The above Mooney viscosity is measured in accordance with ASTM D 1646.

[0044] The above-mentioned olefin-based rubber is usually crosslinked. The crosslinking method is not limited, but it is preferable to crosslink with a peroxide crosslinking agent and / or a sulfur-based crosslinking agent, and more preferably with a peroxide crosslinking agent, in that it further improves corrosion resistance and compression set properties and further suppresses metal leaching.

[0045] As the peroxide crosslinking agent mentioned above, known agents can be used, and organic peroxides are preferred. Examples of organic peroxides include diacyl peroxides such as benzoyl peroxide, dibenzoyl peroxide, and p-chlorobenzoyl peroxide; peroxyesters such as 1-butyl peroxyacetate, t-butyl peroxybenzoate, and t-butyl peroxyphthalate; methyl ethyl ketone peroxide, 2,2-bis(t-butylperoxy)octane, 1,1-bis(t-butylperoxy)cyclohexane, 1,1-bis(t-butylperoxy)-3,3,5-trimethylcyclohexane, and 4,4-di(t-butylperoxy)-n-butylvalerate. Examples include peroxyketals such as di-t-butylperoxybenzoate, 1,3-bis(1-butylperoxyisopropyl)benzene, dicumyl peroxide, t-butylcumyl peroxide, di-t-butyl peroxide, di-t-amyl peroxide, 1,3-bis(t-butylperoxyisopropyl)benzene, 2,5-dimethyl-2,5-di(t-butylperoxy)hexane, 2,5-dimethyl-2,5-bis(t-butylperoxy)hexane, and hydroperoxides such as t-butylhydroperoxide.

[0046] In particular, organic peroxides with a half-life of 1 minute at temperatures in the range of 130°C to 200°C are preferred, and dialkyl peroxides are preferably used.

[0047] As the sulfur-based crosslinking agent mentioned above, known substances can be used, such as elemental sulfur or sulfur compounds.

[0048] The amount of crosslinking agent used is preferably 0.5% by mass or more, more preferably 1.0% by mass or more, more preferably 3.0% by mass or more, and also preferably 10% by mass or less, more preferably 8.0% by mass or less, and even more preferably 6.0% by mass or less, relative to the uncrosslinked olefin rubber.

[0049] The rubber member of this disclosure preferably further contains an olefin resin. This can further improve corrosion resistance. When the olefin rubber is ethylene-α-olefin rubber (preferably EPM), it is particularly preferable to use an olefin resin in combination.

[0050] The above-mentioned olefin resin is a resin obtained by polymerizing at least one type of olefin, and may be a homopolymer or a copolymer.

[0051] Examples of the olefin resins mentioned above include polyethylene resin, polypropylene resin, amorphous cyclic olefin resin, crystalline cyclic olefin resin, polymethylpentene resin, amorphous polystyrene resin, and crystalline polystyrene resin, and one or more of these can be used. Among these, polyethylene resin is preferred from the viewpoint of corrosion resistance and dispersibility.

[0052] Examples of polyethylene resins include high-density polyethylene (HDPE), medium-density polyethylene (MDPE), low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), very low-density polyethylene (VLDPE), very high molecular weight polyethylene (UHPE), and cross-linked polyethylene (PEX). Among these, at least one selected from the group consisting of high-density polyethylene and very high molecular weight polyethylene is preferred from the viewpoint of corrosion resistance.

[0053] The high-density polyethylene mentioned above has a density of 0.940 g / m³. 3 Preferably, it is 0.945 g / cm³ or more. 3 It is more preferable that the amount be greater than or equal to 0.970 g / m². 3 Preferably, it is 0.965 g / m 3 The following is more preferable: The density of polyethylene is measured in accordance with JIS K7112.

[0054] The above ultra-high molecular weight polyethylene has a weight-average molecular weight of 1.0 × 10⁻⁶. 6 Preferably, it is 1.2 × 106 It is more preferable that the above is true, and also 7.0 × 10 7 Preferably, it is 1.0 × 10 7 It is more preferable that the following conditions apply: 7.0 × 10 6 The following is even more preferable: The molecular weight of polyethylene is measured by converting it to polystyrene equivalent using gel permeation chromatography (GPC), and the molecular weight of ultra-high molecular weight polyethylene is measured by converting it from its intrinsic viscosity using the viscosity method.

[0055] The content of the olefin resin is preferably 1% by mass or more, more preferably 15% by mass or more, even more preferably 30% by mass or more, even more preferably 45% by mass or more, and preferably 60% by mass or less, and even more preferably 55% by mass or less, relative to the olefin rubber.

[0056] The rubber member of this disclosure is in contact with a corrosive substance. Part of the rubber member may be in contact with the corrosive substance, or the entire rubber member may be in contact with the corrosive substance.

[0057] The above-mentioned corrosive substance may be any substance that is corrosive, and may be a substance that is corrosive to rubber, resin, metal, etc. Furthermore, the above-mentioned corrosive substance may be a liquid, solid, or gas. It is preferable that it be a liquid in which the effects of this disclosure are more pronounced.

[0058] The above-mentioned corrosive substance has an oxidation-reduction potential (vsNHE) of preferably -2.0V or higher, more preferably -1.0V or higher, even more preferably -0.5V or higher, and also preferably 3.0V or lower, more preferably 2.5V or lower, and even more preferably 2.1V or lower.

[0059] Examples of the corrosive substances mentioned above include acidic substances, basic substances, oxidizing substances, organic solvents, and saltwater.

[0060] Examples of the above-mentioned acidic substances include chemical solutions with a pH of 6 or less, preferably 5 or less, and more preferably 4 or less. Specifically, these include acids such as sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, and hydrochloric acid; mixtures of these acids; and mixtures of these acids with other substances (such as hydrogen peroxide). In particular, at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is preferred, and at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is more preferred.

[0061] Examples of the above basic substances include chemical solutions with a pH of 8 or higher, preferably 9 or higher, and more preferably 10 or higher. Specifically, TMAH([(CH3)4N] + [OH] - Examples include sodium hydroxide aqueous solution, ammonia and other bases; mixtures of these bases; and mixtures of these bases with other substances (such as hydrogen peroxide). In particular, TMAH([(CH3)4N] + [OH] - Preferably, at least one selected from the group consisting of aqueous sodium hydroxide solution, aqueous ammonia solution, and a mixed chemical solution of hydrogen peroxide solution and aqueous ammonia solution.

[0062] Examples of basic substances include chemical solutions with an oxidation-reduction potential (vsNHE) of -2.0 to 0V, preferably -1.0 to 0V, and more preferably -0.5 to 0V. Specifically, TMAH([(CH3)4N] + [OH] - Examples include basic substances such as aqueous sodium hydroxide solution, aqueous ammonia, hydroxylamine, hydrazine, hydrogen water, and sodium sulfite; and mixtures of these basic substances with other substances. In particular, TMAH([(CH3)4N] + [OH] -Preferably, at least one selected from the group consisting of aqueous sodium hydroxide solution, aqueous ammonia solution, and a mixed chemical solution of hydrogen peroxide solution and aqueous ammonia solution.

[0063] Examples of the oxidizing substances mentioned above include chemical solutions with an oxidation-reduction potential (vsNHE) of 0 to 3.0 V, preferably 0.5 to 2.5 V, and more preferably 1.0 to 2.1 V. Specifically, these include sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide, and mixtures of these oxidizing substances with other substances (such as hydrofluoric acid). In particular, at least one selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide solution, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid is preferred, and at least one selected from the group consisting of nitric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide solution and sulfuric acid is more preferred.

[0064] Examples of the above-mentioned organic solvents include esters such as methyl acetate, ethyl acetate, propyl acetate, n-butyl acetate, and tert-butyl acetate; ketones such as acetone, methyl ethyl ketone, and cyclohexanone; aliphatic hydrocarbons such as hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, and mineral spirits; aromatic hydrocarbons such as benzene, toluene, xylene, naphthalene, and solvent naphtha; alcohols such as methanol, ethanol, isopropyl alcohol, tert-butanol, and ethylene glycol monoalkyl ethers; cyclic ethers such as tetrahydrofuran, tetrahydropyran, and dioxane; nitriles such as acetonitrile and propionitrile; amides such as dimethyl sulfoxide, N,N-dimethylformamide, and N,N-dimethylacetamide; halogenated hydrocarbons such as dichloromethane, dichloroethane, and chloroform, and mixtures thereof. Among these, alcohols are preferred, and isopropyl alcohol is more preferred.

[0065] The corrosive substance is preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and brine; more preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, and organic solvents; and even more preferably at least one selected from the group consisting of acidic substances and basic substances.

[0066] The corrosive substance mentioned above is preferably at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, mixed acid of hydrofluoric acid and nitric acid, mixed chemical solution of hydrogen peroxide and hydrochloric acid, mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, aqueous sodium hydroxide solution, aqueous ammonia, mixed chemical solution of hydrogen peroxide and aqueous ammonia, isopropyl alcohol, and saline solution. More preferably, at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, mixed acid of hydrofluoric acid and nitric acid, mixed chemical solution of hydrogen peroxide and hydrochloric acid, mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, aqueous sodium hydroxide solution, mixed chemical solution of hydrogen peroxide and aqueous ammonia, and isopropyl alcohol. Even more preferably, at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid, mixed acid of hydrofluoric acid and nitric acid, mixed chemical solution of hydrogen peroxide and sulfuric acid, and TMAH.

[0067] The rubber member of this disclosure may have only a portion (layer) containing the olefin-based rubber, or it may have a portion (layer) containing the olefin-based rubber and other portions (layers). However, from the viewpoint of ensuring corrosion resistance, it is preferable that at least a part of the surface that comes into contact with the corrosive substance is composed of a portion (layer) containing the olefin-based rubber, and it is more preferable that the entire surface that comes into contact with the corrosive substance is composed of a portion (layer) containing the olefin-based rubber.

[0068] The rubber member of this disclosure is used as at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, medical materials, semiconductor materials, and information and communication materials. Among the above members, semiconductor materials are preferred due to their excellent corrosion resistance and low metal leaching, and semiconductor manufacturing equipment materials (articles for semiconductor manufacturing equipment) are more preferred.

[0069] Examples of building materials (construction materials) components include interior building materials such as baseboards, ceiling materials, and plumbing materials, as well as exterior building materials such as waterproofing sheets, water-stopping materials, exterior wall materials, and roofing materials. Examples of mobility components mentioned above include parts used in ferries, railways, automobiles, motorcycles, drones, robots, and the like. Examples of the above-mentioned aerospace components include exterior and interior materials for aircraft and rockets, wire insulation materials, cable protection materials, jet engines, cabin interior materials, and their components. Examples of the above-mentioned medical components include piping materials, chemical containers, sterilization containers, medical devices, laboratory and analytical instruments, and packaging materials. Examples of semiconductor materials mentioned above include process materials used in semiconductor manufacturing and components for semiconductor manufacturing-related equipment. Examples of the above-mentioned information and communication components include parts for devices such as wireless LAN transmission and reception circuits, circuit boards, and parts for devices such as optical communications.

[0070] Examples of components of this disclosure include containers, piping, nozzles, tubes, tanks, fittings, valves, pumps, housings, spin chucks, O-rings, packings, gaskets, washers, sealing materials, nuts, bolts, films, bottles, wire insulation, hoses, pipes, sheets, rollers, cocks, connectors, filter housings, filter cages, flow meters, wafer carriers, wafer boxes, and the like.

[0071] The rubber components of this disclosure are suitably applicable to at least one selected from the group consisting of containers, piping, nozzles, tubes, tanks, fittings, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials, given that corrosion resistance is required. In particular, they are suitably applicable to at least one selected from the group consisting of O-rings, packings, gaskets, and sealing materials, and are especially suitably applicable to O-rings. Furthermore, it can be suitably used in the above-mentioned piping, nozzles, tubes, O-rings, packings, gaskets, and sealing materials (preferably O-rings, packings, gaskets, and sealing materials, more preferably O-rings) within semiconductor manufacturing-related equipment.

[0072] The piping is not particularly limited, but in terms of shape, an inner diameter of 2 mm to 400 mm is preferred, 2 mm to 100 mm is more preferred, and 2 mm to 25 mm is particularly preferred. Examples include robust pipe types, flexible hoses that can be incorporated according to the installation space, and bellows pipes that can be bent despite having a large diameter. Furthermore, the inside of the piping may be made of a material that is clean (less contamination of the chemical solution by extracted ions) and chemical resistant, and may be subjected to high-precision polishing that does not generate dust and does not disturb the liquid flow or gas flow. Depending on the type of chemical being used, such as organic solvents, antistatic properties may be required to prevent static electricity buildup. In such cases, conductive fillers (carbon black, carbon nanotubes, etc.) may be added to provide antistatic properties, provided that cleanliness is not compromised.

[0073] While there are no particular limitations on the nozzle itself, the tip may be precisely machined to match the size and shape of the part. In addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0074] The tube is not particularly limited, but the tube diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and especially preferably 2 to 25 mm. A material with stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (less contamination of the chemical solution by extracted ions) is used. In addition, depending on the chemical solution to be flowed, such as organic solvents, antistatic properties may be required to prevent electrostatic charge buildup, and conductive fillers (carbon black, carbon nanotubes, etc.) may be added to provide antistatic properties within a range that does not worsen cleanliness.

[0075] The containers and tanks are not particularly limited, but they may be subjected to precision cleaning (water washing, acetic acid immersion, hydrochloric acid immersion, nitric acid immersion, wiping cleaning, pure water washing, etc.) to remove dirt and residue. Packaging after cleaning may be carried out in a cleanroom or clean booth environment.

[0076] The fittings and valves are not particularly limited, but they are required to be oil-free, particle-free, dead space-free, and externally leak-free, and their size is preferably in the range of Φ3.2mm to 40mm, and more preferably in the range of Φ3.2 to 12.7mm.

[0077] While not particularly limited, a pump may sometimes require retractability.

[0078] While not particularly limited, spin chucks may require hardness, corrosion resistance, and dimensional stability, and conductivity may be added.

[0079] While there are no particular limitations on the O-ring and sealing material, the material properties that are required include excellent elasticity, good compression set, high wear resistance, excellent heat resistance, resistance to the liquids and gases to which it is applied, and a long lifespan. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore high heat resistance, chemical resistance, and plasma resistance are required. The compression set is preferably 25% or less at 100°C for 72 hours, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less.

[0080] While there are no particular limitations on packings and gaskets, they are often required to have good compression set, a low coefficient of friction, and excellent wear resistance. To prevent leaks, heat resistance, cold resistance, pressure resistance, and chemical resistance are also sometimes required. The compression set is preferably 25% or less at 100°C for 72 hours, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less.

[0081] While washers are not particularly limited, they are often intended for use in cleanrooms and similar environments, requiring durability, corrosion resistance, and rust prevention.

[0082] The components of this disclosure can be used, for example, in the following applications: <Building materials> Exterior materials for furniture, interior building materials for walls, ceilings, floors, etc. Exterior building materials such as siding, fences, roofs, gates, and gable boards; Window frames, doors, handrails, thresholds, lintels, etc. - decorative surface materials; Membrane materials (roofing materials, ceiling materials, exterior wall materials, interior wall materials, covering materials, etc.) for membrane structures (sports facilities, horticultural facilities, atriums, etc.); Outdoor-use lumber (soundproof walls, windbreak fences, wave overhang fences, garage canopies, shopping malls, walkway walls, roofing materials); Building materials such as tent materials for tent warehouses, sunshade membranes, partial roofing materials for letting in light, window materials to replace glass, fire-resistant partition membranes, curtains, exterior wall reinforcement, waterproof membranes, smoke barriers, non-combustible transparent partitions, and road reinforcement; Agricultural films, weather-resistant covers for various roofing materials and side walls; Covering materials for glass products such as non-combustible fire-resistant safety glass; etc. Among these, given the requirement for corrosion resistance, it is particularly suitable for use in membrane materials for membrane structures, outdoor paneling, tent materials for tent warehouses, sunshade membranes, partial roofing materials for letting in light, window materials as an alternative to glass, fire-resistant partition membranes, curtains, exterior wall reinforcement, waterproof membranes, smoke-proof membranes, non-combustible transparent partitions, road reinforcement and other building materials, agricultural films, and weather-resistant covers for various roofing materials and side walls. When using the components of this disclosure for the above applications, from the viewpoint of corrosion resistance and weather resistance, at least one olefin rubber selected from the group consisting of ethylene-propylene-diene rubber and ethylene-propylene rubber is preferred.

[0083] <Mobility> O-rings, tubes, gaskets, valve cores, hoses, seals, and diaphragms used in the fuel systems and peripheral equipment of automobiles (for example, injector O-rings, injector gaskets, fuel pump O-rings, diaphragms, fuel hoses, filler hoses, and evaporator hoses) (these may be for sour gasoline, alcohol fuel, or fuels containing gasoline additives such as methyl tert-butyl ether and amines). Hoses and sealing materials used in automatic transmission (AT) systems of automobiles (e.g., ATF hoses); Gaskets, shaft seals, valve stem seals, sealing materials, and hoses used in automobile engines and peripheral equipment (e.g., carburetor flange gaskets, engine head gaskets, metal gaskets, crankshaft seals, camshaft seals, valve stem seals, manifold packings, oil hoses); Oxygen sensor for automotive engines; Automotive components such as brake hoses, air conditioning hoses, radiator hoses, radiator tanks, chemical tanks, bellows, spacers, rollers, gasoline tanks, bumpers, door trims, instrument panels, wire insulation materials, and other automotive parts; O-rings, tubes, gaskets, valve cores, hoses, seals, and diaphragms used in the fuel systems and peripheral equipment of ships; Corrosion-preventive tapes for pipes, such as tapes used to wrap around pipes on ship decks; etc. Among these, due to the requirement of corrosion resistance, it can be particularly suitably used in O(square) rings, tubes, packings, hoses, and sealing materials used in the fuel systems and peripheral equipment of automobiles; hoses and sealing materials used in the automatic transmission systems of automobiles; other automobile components such as brake hoses, air conditioning hoses, radiator hoses, bellows, spacers, rollers, bumpers, door trims, and wire insulation materials; and O(square) rings, tubes, packings, valve cores, hoses, sealing materials, and diaphragms used in the fuel systems and peripheral equipment of ships. When using the components of this disclosure for the above applications, from the viewpoint of corrosion resistance and oil resistance, at least one olefin rubber selected from the group consisting of ethylene-propylene-diene rubber, ethylene-propylene rubber, and butyl rubber is preferred.

[0084] <Aerospace> O-rings, tubes, packings, valve cores, hoses, seals, and diaphragms used in the fuel systems and peripheral equipment of aircraft and rockets; etc. Among these, due to the requirement of corrosion resistance, it can be particularly suitable for use in O-rings, tubes, packings, hoses, and sealing materials used in the fuel systems and peripheral equipment of aircraft and rockets. When using the components of this disclosure for the above applications, from the viewpoint of corrosion resistance and weather resistance, at least one olefin rubber selected from the group consisting of ethylene-propylene-diene rubber and ethylene-propylene rubber is preferred.

[0085] <Medical> Medical tubing materials such as infusion tubes, blood collection tubes, drainage tubes, catheters, catheter connectors, stents, pipes, fittings, tube connectors, valves, filters, etc. Liquid, powder, or solid drug containers such as packaging, bottles, bottle caps, vials, ampoules, pre-filled syringes, infusion bags, infusion bag connectors, sealed drug bags, press-through packages, and eye drop containers; Sample containers such as urine collection bags, test tubes for blood sampling, blood collection tubes, test cells, and specimen containers; Sterilization containers for medical instruments such as scalpels, forceps, gauze, and contact lenses; Housings for electronic devices such as medical sensors, cardiac devices, and pacemakers; Medical devices such as inhalation masks, syringes, syringe rods, injection needles, surgical trays, protective plugs, rubber stoppers, and endoscopes; Laboratory and analytical equipment such as beakers, petri dishes, flasks, test tubes, and centrifuge tubes; Medical optical components such as plastic lenses for medical examinations; Artificial organs and their components, such as denture bases, dentures, artificial hearts, artificial tooth roots, artificial bones, and artificial joints; etc. Among these, from the viewpoint of chemical resistance and heat resistance, it can be used particularly suitably for medical infusion tubes, blood collection tubes, drain tubes, catheters, piping, fittings, tube connectors, valves, bottles, bottle caps, vials, ampoules, pre-filled syringes, infusion bags, urine collection bags, test tubes for blood sampling, blood collection tubes, test cells, specimen containers, sterile containers, syringes, syringe rods, surgical trays, and protective stoppers. When using the components of this disclosure for the above applications, from the viewpoint of chemical resistance and heat resistance, at least one olefin rubber selected from the group consisting of ethylene-propylene-diene rubber and ethylene-propylene rubber is preferred.

[0086] <Information and Communication> Insulating boards for high-frequency circuits, insulating materials for connecting components, printed circuit boards; Bases and antenna covers for high-frequency vacuum tubes; Wire insulation material for coaxial cables, LAN cables, etc. Optical fiber coating material; LCD displays and other types of displays; Components for mobile phones; etc. Among these, due to the requirement of corrosion resistance, it can be particularly suitable for use in insulating boards for high-frequency circuits, insulating materials for connecting components, printed circuit boards; bases and antenna covers for high-frequency vacuum tubes; wire coverings for coaxial cables, LAN cables, etc.; and optical fiber coverings. When using the components of this disclosure for the above applications, from the viewpoint of corrosion resistance, at least one selected from the group consisting of ethylene-propylene-diene rubber and ethylene-propylene rubber is preferred as the olefin-based rubber.

[0087] <Semiconductors> Chemical transfer components for semiconductor factories and semiconductor manufacturing-related equipment, including chemical tanks, containers, housings, piping, O-rings, tubes, packings, valve cores, hoses, seals, rolls, gaskets, washers, diaphragms, nozzles, fittings, coatings, and inner linings for pipes; Drug stoppers and packaging films; Wastewater transport components such as tanks, containers, tubes, hoses, fittings, and nozzles; Containers, tubes, hoses, and other components for transporting high-temperature liquids; Steam piping components such as tubes and hoses for steam piping; etc. Among these, due to the requirement of corrosion resistance, it can be particularly suitably used in O-rings, tubes, packings, hoses, sealing materials, rolls, gaskets, diaphragms, and fittings for semiconductor manufacturing-related equipment. When using the components of this disclosure for the above applications, at least one olefin rubber selected from the group consisting of ethylene-propylene-diene rubber and ethylene-propylene rubber is preferred.

[0088] The semiconductor manufacturing equipment mentioned above includes photolithography equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, discam equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment / other manufacturing equipment (defect correction equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching equipment. Etching equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high-current ion implantation equipment, medium-current ion implantation equipment, high-energy ion implantation equipment), thin film formation equipment, CVD equipment (high-pressure CVD equipment, SACVD, reduced-pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, and other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor semiconductor equipment). Conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectrometer), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machine, bump plating equipment, back grinder tape application machine, back grinder, back grinder tape removal machine), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment) Examples include molding equipment, outer lead bonding equipment, flip-chip bonding equipment, packaging equipment (molding equipment, deburring equipment, soldering equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (proppers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (cold and heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life testing equipment).Related equipment for semiconductor manufacturing includes various transport systems (in-process wafer transport systems, inter-process wafer transport systems, stockers), pure water and chemical systems (pure water production systems, ultrafiltration systems, reverse osmosis systems, sterilization systems, chemical supply systems, slurry supply systems, chemical purification systems, wastewater treatment systems), various gas systems (gas generators, gas purification systems, gas mixing systems, gas detection systems, exhaust gas treatment systems), cleanroom systems (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying systems, flow control equipment, various taping systems, various packaging systems, measuring instruments for liquids and various gases).

[0089] Among these, semiconductor manufacturing equipment that uses corrosive substances within the device is not particularly limited, but from the perspective of utilizing the chemical resistance properties, photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), discam equipment), thin film formation / etching / cleaning and drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment / other manufacturing equipment (defect correction equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), washing Cleaning and drying equipment (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, reduced-pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), other thin-film deposition equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, cleaning equipment for CMP), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life testing equipment) are preferred. As related equipment for semiconductor manufacturing equipment, the following are preferred: pure water and chemical solution systems (chemical supply systems, slurry supply systems, chemical purification systems, wastewater treatment systems), various gas systems (gas generators, gas purification systems, gas mixing systems, gas detection systems, exhaust gas treatment systems), cleanroom systems (thermal chambers, environmental testing equipment), and other manufacturing-related equipment (various jig cleaning and drying systems, flow control equipment, various packaging systems, measuring instruments for liquids and various gases).

[0090] As described above, the rubber member of this disclosure can be suitably used as a component (article for semiconductor manufacturing equipment) for semiconductor manufacturing equipment, but due to its excellent chemical resistance, it is more suitable as a component constituting semiconductor manufacturing equipment in which chemicals are used, in particular as a component that comes into contact with chemicals.

[0091] The above-mentioned chemicals are not particularly limited, but examples include chemicals used in semiconductor manufacturing equipment. These chemicals can be used individually or in combination of two or more.

[0092] Specifically, the above-mentioned chemical is TMAH([(CH3)4N] + [OH] - Examples include at least one selected from the group consisting of ), sulfuric acid, aqueous sodium hydroxide solution, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, H2O2, and H2O), SC2 (a mixture of HCl, H2O2, and H2O), phosphoric acid, and hydrochloric acid. Among these, TMAH, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM, SC1, SC2, phosphoric acid, and hydrochloric acid are preferred, and TMAH, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, and SPM are more preferred.

[0093] Other examples of the above-mentioned chemicals include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen / halogen gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0094] Examples of the silicon-based gases mentioned above include monosilane, dichlorosilane, trichloride silane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the above-mentioned arsenic gases include arsine, arsenic(III) fluoride, arsenic(V) fluoride, arsenic(III) chloride, and arsenic(V) chloride. Examples of the phosphorus-based gases mentioned above include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gases mentioned above include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the above-mentioned metal hydride gases include hydrogen selenide, monogermane, hydrogen telluride, styvin, and tin hydride. Examples of the above-mentioned metal alkyl gases include trialkylgallium and trialkylindium. Examples of the above-mentioned halogenated hydrocarbon gases include methane tetrafluoride, methane trifluoride, methane difluoride, propane hexafluoride, propane octafluoride, and cyclobutane octafluoride. Examples of the above-mentioned halogen and halide gases include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gases mentioned above include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, nitrous oxide, monosilane, and cyclobutane octafluoride are preferred, and ammonia gas, nitrogen trifluoride, and nitrous oxide are more preferred.

[0095] The above-mentioned semiconductor manufacturing equipment component (semiconductor manufacturing equipment article) may have only a portion (layer) containing the olefin rubber, or it may have a portion (layer) containing the olefin rubber and other portions (layers). However, in order to ensure chemical resistance, it is preferable that at least a part of the surface that comes into contact with the chemical is composed of a portion (layer) containing the olefin rubber, and it is more preferable that the entire surface that comes into contact with the chemical is composed of a portion (layer) containing the olefin rubber.

[0096] The rubber member of this disclosure is preferably one in which a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed for one week in each of the four chemical solutions described later (1), (3), (5), and (6), and the relative mass after immersion, with the mass before immersion set to 100, is between 50 and 150. Members that satisfy this requirement have excellent corrosion resistance. The above relative value is more preferably 85 or higher, even more preferably 90 or higher, even more preferably 95 or higher, particularly preferably 98 or higher, and more preferably 120 or lower, even more preferably 115 or lower, even more preferably 110 or lower, and particularly preferably 108 or lower. Ideally (most preferably) it is 100.

[0097] It is more preferable that, when a test piece of the rubber member of this disclosure (size: 10 mm × 50 mm × 2 mm) is immersed in each of the nine chemical solutions (1) to (9) described later for one week, the relative mass after immersion, with the mass before immersion set to 100, falls within the range described above.

[0098] Preferably, the rubber member of this disclosure is such that when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the nine chemical solutions (1) to (9) described below for one week, and the relative mass after immersion is calculated with the mass before immersion set to 100, the average of the relative masses for the nine chemical solutions is 80 or more and 120 or less, with a standard deviation of 20 or less. This further improves corrosion resistance. The average of the above relative values ​​is more preferably 85 or higher, even more preferably 90 or higher, even more preferably 95 or higher, particularly preferably 97 or higher, and more preferably 115 or lower, even more preferably 110 or lower, even more preferably 105 or lower, and particularly preferably 103 or lower. Ideally (most preferably) it is 100. The standard deviation of the above relative value is more preferably 15 or less, even more preferably 10 or less, even more preferably 8 or less, particularly preferably 5 or less, and particularly preferably 4.5 or less. It may also be 0 or greater, 1 or greater, or 3 or greater. Ideally (most preferably) it is 0.

[0099] The chemical solution used for immersing the above test specimens is as follows: (1)25% by mass TMAH([(CH3)4N] + [OH] - (80℃) (2) 100% by mass isopropyl alcohol (80°C) (3) 49% by mass hydrofluoric acid (70℃) (4) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid in a volume ratio of 1:5) (20℃) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by mass in a volume ratio of 1:100) (20℃) (6) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C) (7) SC1 (a mixture of 25-28% by mass of aqueous ammonia, 30-36% by mass of aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) (8) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) (9)85% by mass phosphoric acid (80℃)

[0100] The rubber member of this disclosure preferably has a metal elution amount (by mass) of 15 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Ag, Cd, Pb) of 30 ppb or less, more preferably 25 ppb or less, and even more preferably 20 ppb or less when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week, respectively.

[0101] The rubber member of this disclosure preferably has a Zn metal leaching amount (by mass) of 150 ppb or less, more preferably 100 ppb or less, even more preferably 90 ppb or less, and particularly preferably 75 ppb or less when a test piece of the rubber member (size: 10 mm × 50 mm × 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week.

[0102] The rubber member of this disclosure preferably has a metal leaching amount (by mass) of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) of 150 ppb or less, more preferably 100 ppb or less, and even more preferably 90 ppb or less when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week, respectively.

[0103] Ideally (most preferably) the amount of any of the above-mentioned elements to be eluted is 0 ppb, but it may also be greater than or equal to the detection limit.

[0104] The rubber member of this disclosure preferably has a compression set of 25% or less, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less at 100°C for 72 hours. A lower compression set is preferable, but it may be 1% or more. The above compression set is measured in accordance with the test standard EPDM-70 of JIS B2401 "O-rings - Part 1: O-rings".

[0105] The rubber member of this disclosure can be manufactured, for example, by crosslinking a rubber composition obtained by kneading an uncrosslinked olefin rubber with a crosslinking agent, and optionally with the aforementioned olefin resin or other components.

[0106] Other components mentioned above include known additives used in rubber compositions, such as vulcanization accelerators (zinc oxide, etc.), vulcanization accelerators (stearic acid, etc.), fillers, antioxidants, crosslinking aids, processing aids, acid acceptors, ultraviolet absorbers, flame retardants, colorants, foaming agents, coupling agents, dispersants, and mold release agents.

[0107] Lubricants and tackifiers can be used as processing aids. Examples of lubricants include paraffin and hydrocarbon resins such as paraffin wax, microcrystalline wax, and polyethylene wax; fatty acids such as stearic acid; fatty acid amides such as stearic acid amide; fatty acid esters such as butyl stearate and ester waxes; higher aliphatic alcohols such as stearyl alcohol; partial esters of fatty acids and polyhydric alcohols such as glycerin fatty acid esters; and fatty acid metal salts such as zinc stearate. Furthermore, examples of tackifiers include coumarone resins such as coumarone-indene resin; phenolic and terpene resins such as phenol-formaldehyde resin, terpene-phenol resin, and alkylphenol-formaldehyde resin; synthetic polyterpene resins, aromatic hydrocarbon resins, aliphatic hydrocarbon resins, and petroleum-based hydrocarbon resins such as polybutene; and rosin derivatives such as rosin esters and various esters of hydrogenated rosin.

[0108] As fillers, common ones used in rubber compositions can be used, such as carbon black, silicic acid, silica, silicates, alumina, alumina hydrate, calcium carbonate, magnesium carbonate, barium sulfate, magnesium sulfate, clay, talc, kaolin, short fibers (synthetic fibers, glass fibers, carbon fibers, etc.), conductive oxides (zinc oxide, etc.), ferrites, metal powders, mica, graphite, molybdenum disulfide, barium titanate, boron nitride, etc.

[0109] Examples of colorants include inorganic pigments such as white pigments (titanium dioxide, zinc oxide, gypsum, etc.), black pigments (carbon black, etc.), red pigments, and blue pigments; organic pigments such as azo pigments and phthalocyanine pigments; and dyes.

[0110] Examples of foaming agents include inorganic foaming agents such as sodium bicarbonate and ammonium bicarbonate, and organic foaming agents such as p,p'-oxybis(benzenesulfonyl hydrazide), azodicarbonamide, and dinitrosopentamethylenetetramine.

[0111] Examples of coupling agents include white filler coupling agents such as vinyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, and bis(3-(triethoxysilyl)propyl)tetrasulfide, and carbon black coupling agents such as N,N′-bis(2-methyl-2-nitropropyl)-1,6-diaminohexane.

[0112] The content of the above-mentioned other components is preferably 0.1% by mass or more, more preferably 1.0% by mass or more, and preferably 150% by mass or less, and more preferably 100% by mass or less, relative to the above-mentioned olefin-based rubber.

[0113] Using an anti-aging agent as one of the other components mentioned above is one preferred embodiment. Examples of primary antioxidants include amine-based antioxidants and phenol-based antioxidants, and one or more of these can be used. Examples of secondary antioxidants include sulfur-based antioxidants and phosphorus-based antioxidants. The combined use of primary and secondary antioxidants is preferred, and a combination of amine-based and sulfur-based antioxidants is particularly preferred.

[0114] The content of the antioxidant is preferably 0% by mass or more, more preferably 0.1% by mass or more, particularly preferably 0.5% by mass or more, and preferably 30% by mass or less, and particularly preferably 10% by mass or less, relative to the olefin-based rubber. A content exceeding 30% by mass is undesirable because it causes blooming.

[0115] The mixing method is not particularly limited, and known methods using a closed-type mixer, a roll kneader, etc., can be employed. When incorporating the olefin resin mentioned above, a method including a step of mixing at a temperature above the melting point of the olefin resin is preferred from the viewpoint of more uniform mixing.

[0116] The method of crosslinking is not particularly limited, and known methods such as hot pressing can be used. The crosslinking temperature is preferably 100°C or higher, more preferably 130°C or higher, preferably 250°C or lower, and more preferably 200°C or lower. The bridge-building time is preferably 5 minutes or more, more preferably 15 minutes or more, preferably 120 minutes or less, and more preferably 60 minutes or less.

[0117] This disclosure also relates to semiconductor manufacturing equipment fitted with the rubber component of this disclosure described above. The use of the component of this disclosure can provide the equipment with excellent corrosion resistance.

[0118] The semiconductor manufacturing equipment described in this disclosure is preferably the semiconductor manufacturing equipment and related equipment described above. Furthermore, the semiconductor manufacturing equipment described in this disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing equipment and related equipment for semiconductor manufacturing equipment.

[0119] The above semiconductor manufacturing equipment is at least one selected from the group consisting of photolithography equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment. The above-mentioned semiconductor manufacturing equipment-related equipment is preferably at least one selected from the group consisting of pure water / chemical solution equipment, gas equipment, cleanroom equipment, and manufacturing-related equipment.

[0120] The above-mentioned photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a discam apparatus. The above-mentioned thin-film formation, etching, cleaning, and drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrubbing cleaning apparatus. The above inspection and evaluation equipment and manufacturing equipment are defect correction devices. The above-mentioned resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus. The etching apparatus described above is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus. The above-mentioned washing and drying apparatus is at least one selected from the group consisting of a wet washing apparatus, a scrubbing washing apparatus, and a drying apparatus. The above-mentioned CVD apparatus is at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, and ALD apparatus. The thin-film formation apparatus described above is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus. The above-mentioned CMP equipment is at least one selected from the group consisting of a CMP device and a CMP cleaning device. The above-mentioned processing apparatus is a bump plating apparatus, The above-mentioned aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus. The above inspection device is a life test device. The above-mentioned pure water / chemical solution system is at least one selected from the group consisting of a chemical supply system, a slurry supply system, a chemical purification system, and a waste liquid treatment system. The above-mentioned gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device. The above-mentioned cleanroom equipment is at least one selected from the group consisting of a thermal chamber and an environmental testing apparatus. The above-mentioned manufacturing-related equipment is preferably at least one selected from the group consisting of jig cleaning and drying equipment, flow rate control equipment, packaging equipment, and liquid and gas measuring equipment.

[0121] Although embodiments have been described above, it should be understood that various modifications to the form and details are possible without departing from the spirit and scope of the claims. [Examples]

[0122] The present disclosure will now be further described with reference to examples, but the present disclosure is not limited to these examples.

[0123] Various physical properties were measured using the following method.

[0124] <Chemical resistance (corrosion resistance) test> The rubber sheets obtained in the examples and comparative examples were cut to a size of 10 mm × 50 mm × 2 mm to be used as test specimens. The test specimens were dried at 60°C for 2 hours. After drying, the mass of the test specimen was measured under room temperature (20°C) conditions before immersion. After measurement, the test specimens were completely immersed in each of the following chemical solutions (1) to (9) and kept there for one week (168 hours). After holding, the test specimens were washed with pure water, surface water droplets were wiped off, and they were dried at 60°C for 12 hours. The mass of the immersed test specimens was then measured under room temperature (20°C) conditions. From the measured masses before and after immersion, the relative value of the mass after immersion was calculated, with the mass before immersion set to 100. Furthermore, the mean and standard deviation of the immersion mass (relative value) for the nine types (1) to (9) were calculated. (Medicinal solution) (1)25% by mass TMAH([(CH3)4N] + [OH] - (80℃) (2) 100% by mass IPA (isopropyl alcohol) (80℃) (3) 49% by mass hydrofluoric acid (70℃) (4) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid in a volume ratio of 1:5) (20℃) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by mass in a volume ratio of 1:100) (20℃) (6) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C) Redox potential (vsNHE): 1.8V (7) SC1 (a mixture of 25-28% by mass aqueous ammonia, 30-36% by mass aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) Redox potential (vsNHE): 1.2V (8) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) Redox potential (vsNHE): 1.6V (9)85% by mass phosphoric acid (80℃)

[0125] <Metal elution test> The rubber sheets obtained in the examples and comparative examples were cut to a size of 10 mm × 50 mm × 2 mm to be used as test specimens. As a pre-cleaning step, the test specimens were immersed in 3.6% by mass hydrochloric acid for 1 hour, followed by rinsing with pure water. Then, the test specimens were immersed in 100 mL of 3.6% by mass hydrochloric acid at 23°C. One week (168 hours) after the start of immersion, a portion of each immersion solution was withdrawn, and the metal concentrations of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) were measured using ICP-MSI (Agilent 8900, Agilent Technologies) to determine the amount of metal leached.

[0126] <Compression permanent strain test> The test was conducted in accordance with the JIS B2401 "O-rings - Part 1: O-rings" EPDM-70 test standard.

[0127] The materials used in the examples and comparative examples are shown below. (rubber) EPT3045: EPDM manufactured by Mitsui Chemicals, Inc., Mooney viscosity ML 1+4 (100℃): 40, Diene monomer content: 4.7% by mass, Ethylene content: 54% by mass EP93: EPDM manufactured by ENEOS Material, Mooney viscosity ML 1+4 (125℃): 31, Diene monomer content: 2.7% by mass, Ethylene content: 55% by mass EPT0045: EPM manufactured by Mitsui Chemicals, Mooney viscosity ML 1+4 (100℃): 40, Ethylene content: 55% by mass EP27: EPDM manufactured by ENEOS Material, Mooney viscosity ML 1+4 (125℃): 70, Diene monomer content: 4.0% by mass, Ethylene content: 56% by mass EP57C: EPDM manufactured by ENEOS Material, Mooney viscosity ML 1+4 (125℃): 58, Diene monomer content: 4.5% by mass, Ethylene content: 67% by mass Butyl 065: Manufactured by Nippon Butyl Co., Ltd., IIR viscosity, Mooney viscosity ML 1+8 (125℃): 32, Diene monomer amount: 1.1% by mass Butyl 365: Manufactured by Nippon Butyl Co., Ltd., IIR viscosity, Mooney viscosity ML 1+8 (125℃): 33, Diene monomer content: 2.3% by mass Zetpol 2001L: Hydrogenated nitrile rubber (HNBR) manufactured by Zeon Corporation. KE-951-U: Silicone rubber (Q) manufactured by Shin-Etsu Chemical Co., Ltd. (resin) HDPE: Novatec HD HJ490 manufactured by Nippon Polyethylene Co., Ltd., Density: 0.958 g / m² 3 UHPE: "Lubmer L4000" manufactured by Mitsui Chemicals, Weight-average molecular weight: 1.5 × 10⁻⁶ 6 g / mol (Carbon Black) Seast G-SO: Manufactured by Tokai Carbon Co., Ltd., FEF Carbon Black Seast 3: Manufactured by Tokai Carbon Co., Ltd., HAF Carbon Black (Crosslinking agent) Perkmill D-40: Manufactured by NOF Corporation, dicumyl peroxide Peroximon F-40: Manufactured by NOF Corporation, α,α'-bis(t-butylperoxy)diisopropylbenzene C-8: 2,5-dimethyl-2,5-bis(t-butylperoxy)hexane, manufactured by Shin-Etsu Chemical Co., Ltd. Sulfur: Hosoi Chemical Industry Co., Ltd. "Sulfur Powder 1000μm" (Vulcanization accelerator) Zinc Oxide (Type 2): Manufactured by Sakai Chemical Industry Co., Ltd. (Vulcanization accelerator) Stearic acid: NOF Corporation's "Powdered Stearic Acid Sakura" (Cross-linking agent) TAIC (Triallyl Isocyanurate): Manufactured by Mitsubishi Chemical Corporation. Nocrack CD: Manufactured by Ouchi Shinko Chemical Industry Co., Ltd., 4,4'-bis(α,α-dimethylbenzyl)diphenylamine Nocrac MBZ: Zinc salt of 2-mercaptobenzimidazole, manufactured by Ouchi Shinko Chemical Industry Co., Ltd. (Anti-aging agent) Antege RD: Manufactured by Kawaguchi Chemical Industry Co., Ltd., 2,4-trimethyl-1,2-dihydroquinoline polymer (TMQ) Noxellar TT: Manufactured by Ouchi Shinko Chemical Industry Co., Ltd., Tetramethylthiuram disulfide (TMTD)

[0128] Examples 1-9 and Comparative Example 1 According to the mixing ratios shown in Tables 1-3, kneading (A kneading) was performed using a closed-type mixer (Laboplastmill Banbury type mixer B-250, manufactured by Toyo Seiki Seisakusho Co., Ltd.) for 5 minutes from the predetermined starting temperature. Next, kneading (B kneading) was performed using an electric heated high-temperature roll press (manufactured by Ikeda Machinery Industry Co., Ltd.) at 50±10℃. After kneading, the mixture was crosslinked at 170℃ for 20 minutes using an electric heated press (manufactured by Otake Machinery Industry Co., Ltd.) to produce rubber sheets (rubber components). Chemical resistance tests were conducted using the obtained rubber sheets. Compression set tests and metal leaching tests were also performed for Examples 1 to 7. The results are shown in Tables 1 to 3.

[0129] Example 10 According to the mixing ratios shown in Table 2, kneading (A kneading) was performed using a closed-type mixer (Laboplastmill Banbury type mixer B-250, manufactured by Toyo Seiki Seisakusho Co., Ltd.) for 5 minutes from a predetermined starting temperature. Next, kneading (B kneading) was performed using an electric heated high-temperature roll press (manufactured by Ikeda Machinery Industry Co., Ltd.) at 50±10℃. After kneading, the mixture was crosslinked at 160℃ for 25 minutes using an electric heated press (manufactured by Otake Machinery Industry Co., Ltd.) to produce a rubber sheet (rubber material). Chemical resistance tests were conducted using the obtained rubber sheets. The results are shown in Table 2.

[0130] Comparative Example 2 According to the mixing ratios shown in Table 4, the mixture was kneaded using a roll mill (B kneading) at 50±10℃ using an electrically heated high-temperature roll mill (manufactured by Ikeda Machinery Industry Co., Ltd.). After kneading, the mixture was pressed at 165℃ for 10 minutes using an electric heat press (manufactured by Otake Machinery Industry Co., Ltd.), followed by secondary vulcanization at 200℃ for 4 hours to produce rubber sheets (rubber components). Chemical resistance tests were conducted using the obtained rubber sheets. The results are shown in Table 4.

[0131] [Table 1]

[0132] [Table 2]

[0133] [Table 3]

[0134] [Table 4]

[0135] The rubber member in the example was suitable for use as a component (part) in semiconductor manufacturing equipment where chemicals are used.

Claims

1. A rubber member comprising an olefin-based rubber, wherein the olefin-based rubber is at least one selected from the group consisting of ethylene-propylene-diene rubber, ethylene-propylene rubber, and butyl rubber, and is crosslinked with a peroxide crosslinking agent and / or a sulfur-based crosslinking agent, and the rubber member is attached to a semiconductor manufacturing apparatus that comes into contact with corrosive substances.

2. The semiconductor manufacturing apparatus according to claim 1, wherein the ethylene content of the ethylene-propylene-diene rubber and the ethylene content of the ethylene-propylene rubber is 50 to 70% by mass.

3. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the amount of diene monomer in the olefin rubber is 0 to 5% by mass.

4. Mooney viscosity (ML) of the olefin-based rubber. １＋４ The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the temperature (100°C) is 10 to 200°C.

5. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the rubber member comprises 1 to 60% by mass of olefin resin relative to the olefin rubber.

6. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the rubber member contains 45 to 55% by mass of olefin resin relative to the olefin rubber.

7. The semiconductor manufacturing apparatus according to claim 5, wherein the olefin resin is polyethylene resin.

8. The olefin resin has a density of 0.94 to 0.97 g / m³ ３ High-density polyethylene and weight-average molecular weight of 1.0 × 10 ６ ~1.0 x 10 ７ The semiconductor manufacturing apparatus according to claim 5, which is at least one selected from the group consisting of ultra-high molecular weight polyethylene.

9. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the rubber member is at least one selected from the group consisting of a container, piping, nozzle, tube, tank, fittings, valve, pump, spin chuck, O-ring, packing, gasket, washer, and sealing material.

10. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the pH of the corrosive substance is 6 or less or 8 or more.

11. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the oxidation-reduction potential (vsNHE) of the corrosive substance is -2.0 to 3.0 V.

12. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the corrosive substance is at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and brine.

13. The semiconductor manufacturing apparatus according to claim 12, wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid.

14. The basic substance is TMAH([(CH ３ ) ４ N] ＋ [OH] － The semiconductor manufacturing apparatus according to claim 12, wherein the chemical is selected from the group consisting of sodium hydroxide aqueous solution, ammonia water, and a mixed chemical solution of hydrogen peroxide water and ammonia water.

15. The corrosive substance is at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide solution and hydrochloric acid, a mixed chemical solution of hydrogen peroxide solution and sulfuric acid, TMAH ([(CH ３ ), ４ N] ＋ [OH] － ), an aqueous sodium hydroxide solution, a mixed chemical solution of hydrogen peroxide solution and ammonia water, and isopropyl alcohol. The semiconductor manufacturing related apparatus according to claim 1 or 2

16. The semiconductor manufacturing-related apparatus according to claim 1 or 2, wherein a chemical is used within the apparatus.

17. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the following four chemical solutions for one week, and the relative value of the mass after immersion, with the mass before immersion set to 100, is 50 or more and 150 or less in each case. (Medicinal solution) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] － (80℃) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid by mass and 69-71% nitric acid by mass in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C)

18. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the following nine chemical solutions for one week, and the relative mass after immersion is calculated with the mass before immersion set to 100, and the average of the relative values ​​for the nine chemical solutions is 80 or more and 120 or less, with a standard deviation of 20 or less. (Medicinal solution) 25% by mass TMAH ([(CH ３ ) ４ N] ＋ [OH] － (80℃) 100% by mass isopropyl alcohol (80°C) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid in a volume ratio of 1:5) (20°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid by mass and 69-71% nitric acid by mass in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% sulfuric acid by mass and 30-36% hydrogen peroxide by mass in a volume ratio of 2:1) (80°C) SC1 (a mixture of 25-28% by mass of aqueous ammonia, 30-36% by mass of aqueous hydrogen peroxide, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35-37% hydrochloric acid, 30-36% hydrogen peroxide solution, and deionized water in a volume ratio of 1:1:4) (70°C) 85% by mass phosphoric acid (80°C)

19. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the amount of metal leaching of 15 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Ag, Cd, Pb) is 30 ppb or less when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week.

20. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the amount of Zn metal leaching when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6% by mass hydrochloric acid at 23°C for one week is 150 ppb or less.

21. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein the amount of metal leaching of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 150 ppb or less when a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in 3.6 mass% hydrochloric acid at 23°C for one week.

22. The semiconductor manufacturing-related apparatus according to claim 1 or 2, which is at least one selected from the group consisting of semiconductor manufacturing equipment and semiconductor manufacturing equipment-related apparatus.

23. The semiconductor manufacturing apparatus is at least one selected from the group consisting of a photolithography apparatus, a thin film formation / etching / cleaning / drying apparatus, an inspection / evaluation apparatus / manufacturing apparatus, a resist processing apparatus, an etching apparatus, a cleaning / drying apparatus, a CVD apparatus, a thin film formation apparatus, a CMP apparatus, a processing apparatus, an aging apparatus, and an inspection apparatus. The semiconductor manufacturing apparatus according to claim 22, wherein the semiconductor manufacturing apparatus is at least one selected from the group consisting of a pure water / chemical solution apparatus, a gas apparatus, a cleanroom apparatus, and a manufacturing apparatus.

24. The photolithography apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a discam apparatus. The thin film formation, etching, cleaning, and drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrubbing cleaning apparatus. The aforementioned inspection and evaluation device / manufacturing device is a defect correction device, The resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, and an ashing apparatus. The etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus. The washing and drying apparatus is at least one selected from the group consisting of a wet washing apparatus, a scrubbing washing apparatus, and a drying apparatus. The CVD apparatus is at least one selected from the group consisting of high-pressure CVD apparatus, SACVD, reduced-pressure CVD, plasma CVD apparatus, metal CVD apparatus, and ALD apparatus. The thin film formation apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus. The CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus. The aforementioned processing apparatus is a bump plating apparatus, The aging apparatus is at least one selected from the group consisting of an aging apparatus, a burn-in apparatus, an IC insertion apparatus, and an IC extraction apparatus. The inspection device is a life test device, The aforementioned pure water / chemical solution system is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device. The gas apparatus is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device. The cleanroom apparatus is at least one selected from the group consisting of a thermal chamber and an environmental testing apparatus. The semiconductor manufacturing apparatus according to claim 23, wherein the manufacturing apparatus is at least one selected from the group consisting of a jig cleaning and drying apparatus, a flow rate control apparatus, a packaging apparatus, and a liquid / gas measuring apparatus.

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