A method for determining the distortion correction position of features in an image formed by a multibeam charged particle microscope, a corresponding computer program product, and a multibeam charged particle microscope.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- カールツァイスマルティセムゲゼルシヤフトミットベシュレンクテルハフツングカールツァイスマルティセムゲゼルシヤフトミットベシュレンクテルハフツングカールツァイスマルティセムゲゼルシヤフトミットベシュレンクテルハフツング
- Filing Date
- 2023-01-20
- Publication Date
- 2026-05-21
AI Technical Summary
Conventional multibeam charged particle microscopes face challenges in accurately correcting higher-order distortions induced by scanning, which affect the precision of feature measurement in semiconductor structures, particularly in determining critical dimensions and overlay accuracy with nanometer-level precision.
An algorithmic method for distortion correction during image post-processing and hardware-based correction during image pre-processing are employed to address scan-induced distortions, utilizing vector distortion maps and spatial variation filters to correct geometric characteristics of features in the image.
The method achieves high-precision measurement of semiconductor features with accuracy below 1 nm, reducing computational load and resource requirements while maintaining high throughput.
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