Mask structure for deposition apparatus, deposition apparatus and method of operating the same

Abstract

To provide a deposition apparatus mask structure capable of more accurately and more simply controlling a film suppression region on a substrate in a deposition process; a deposition apparatus; and a method for operating the same.SOLUTION: A mask structure 20 includes the group of a plurality of first segments 22 and the group of a plurality of second segments 24. The first segments 22 arranged in a direction (for example, a direction D3 shown in Figure 2) surrounding a central axis AX are separated from each other; each of the second segments 24 overlaps with two segments adjacent to each other in the first segments 22 in a perpendicular direction D1 parallel to a direction in which the central axis AX is extended; and the mask structure 20 provided in a process chamber and positioned above a stage covers a boundary region of a substrate held on the stage and controls positions of the first segments and the second segments in the horizontal direction, respectively, between different deposition processes.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] Background of the Invention 1. Field of the Invention

[0001] The present invention relates to a mask structure for a deposition apparatus, a deposition apparatus, and an operation method thereof, and more particularly, to a mask structure including groups of segments overlapping each other, a deposition apparatus including the mask structure, and an operation method of the deposition apparatus.

Background Art

[0002] 2. Description of the Related Art

[0002] In the manufacturing process of semiconductor integrated circuits, various process steps such as film deposition, photolithography, and etching are performed. Chemical vapor deposition (CVD) and physical vapor deposition (PVD) are common film deposition approaches applied in the semiconductor manufacturing process. In a film deposition process such as a sputtering deposition process, a film suppression region is defined in the peripheral region of a wafer to prevent the formation of a material film in the peripheral region of the wafer and avoid related problems such as film peeling at the wafer edge. Further, the film suppression region can preferably be reduced to increase the number of effective chips per wafer and reduce the cost per chip. Therefore, in the film deposition process, it is important to accurately control the film suppression region. Generally, in a sputtering deposition process, a clamping ring configured to cover the peripheral region of the wafer is applied. After a plurality of film deposition processes, a material film is deposited on the inner edge of the clamping ring, which affects the film suppression region of the wafer. Therefore, it is difficult to accurately control the film suppression region corresponding to the clamping ring.

Summary of the Invention

Means for Solving the Problems

[0003]

[0003] A mask structure for a deposition apparatus, a deposition apparatus, and an operation method of the deposition apparatus are provided. The mask structure includes a first group of segments spaced apart from each other and a second group of segments overlapping the first group of segments adjacent to each other to more accurately and simply control a film suppression region on a substrate in a deposition process.

[0004]

[0004] In one embodiment, a mask structure for a deposition apparatus is provided. The mask structure includes a first segment group and a second segment group. The first segment group is arranged in a direction surrounding a central axis and spaced apart from one another. The second segment group is arranged above the first segment group. Each of the second segment group overlaps with two adjacent segments of the first segment group in a perpendicular direction parallel to the direction in which the central axis extends. The length of each segment in the first group in the radial direction outward from the central axis is less than the length of each segment in the second group in the radial direction outward from the central axis.

[0005]

[0005] In one embodiment, a deposition apparatus is provided. The deposition apparatus includes a process chamber, a stage, and a mask structure. The stage is at least partially located within the process chamber and includes a substrate holding structure. The mask structure is located within the process chamber and above the stage, covering the peripheral area of ​​the substrate held on the stage. The mask structure includes a first segment group and a second segment group. The first segment group is arranged in a direction surrounding a central axis and spaced apart from each other. The second segment group is located above the first segment group. Each of the second segment group overlaps with two adjacent segments of the first segment group in a perpendicular direction parallel to the direction in which the central axis extends. The length of each segment in the first group in the radial direction outward from the central axis is less than the length of each segment in the second group in the radial direction outward from the central axis.

[0006]

[0006] In one embodiment, a method for operating a deposition apparatus is provided. The method for operating includes the following steps: A deposition apparatus is prepared. The deposition apparatus includes a process chamber, a stage, and a mask structure. The stage is at least partially located within the process chamber and includes a substrate holding structure. The mask structure is located within the process chamber, above the stage, and covers the peripheral area of ​​the substrate held on the stage. The mask structure includes a first segment group and a second segment group. The first segment group is arranged in a direction surrounding a central axis and spaced apart from each other. The second segment group is located above the first segment group. Each of the second segment group overlaps with two adjacent segments of the first segment group in a perpendicular direction parallel to the direction in which the central axis extends. The length of each segment in the first group in the radial direction outward from the central axis is less than the length of each segment in the second group in the radial direction outward from the central axis. The positions of the first and second segment groups are adjusted horizontally between different depositional processes.

[0007]

[0007] These and other objects of the present invention will become apparent to those skilled in the art by reading the following detailed description of preferred embodiments shown in various drawings. [Brief explanation of the drawing]

[0008] [Figure 1]

[0008] Figure 1 is a schematic diagram showing a deposit apparatus according to a first embodiment of the present invention. [Figure 2]

[0009] Figure 2 is a schematic diagram showing a top view of a mask structure for a deposition apparatus according to the first embodiment of the present invention. [Figure 3]

[0010] Figure 3 is a schematic diagram showing a cross-sectional view of a mask structure for a deposition apparatus according to the first embodiment of the present invention. [Figure 4-7]

[0011] Figures 4-7 are schematic diagrams showing the operation method of a deposition apparatus according to the first embodiment of the present invention, where Figure 4 is a schematic diagram showing the mask structure and the position of the first substrate in the first deposition process, Figure 5 is a schematic diagram showing the first substrate after the first deposition process, Figure 6 is a schematic diagram showing the mask structure and the position of the second substrate in the second deposition process, and Figure 7 is a schematic diagram showing the second substrate after the second deposition process. [Figure 8]

[0012] Figure 8 is a schematic diagram showing the mask structure after the deposition process according to one embodiment of the present invention. [Figure 9]

[0013] Figure 9 is a schematic diagram showing the loading operation in the operation method of the loading apparatus according to the first embodiment of the present invention. [Figure 10]

[0014] Figure 10 is a schematic top view showing the loading operation in the operation method of the loading apparatus according to the first embodiment of the present invention. [Figure 11]

[0015] Figure 11 is a schematic diagram showing a top view of a mask structure for a deposition apparatus according to a second embodiment of the present invention. [Figure 12]

[0016] FIG. 12 is a schematic view showing a mounting operation in the operation method of the deposition apparatus according to the third embodiment of the present invention. [Figure 13]

[0017] FIG. 13 is a schematic top view showing a mounting operation in the operation method of the deposition apparatus according to the third embodiment of the present invention. [Figure 14]

[0018] FIG. 14 is a schematic view showing a part of the mask structure for the deposition apparatus in the third embodiment of the present invention. [Figure 15]

[0019] FIG. 15 is a schematic top view showing the mask structure for the deposition apparatus according to the fourth embodiment of the present invention. [Figure 16]

[0020] FIG. 16 is a schematic view showing a part of the mask structure for the deposition apparatus according to the fourth embodiment of the present invention. [Figure 17]

[0021] FIG. 17 is a schematic view showing a part of the mask structure for the deposition apparatus according to the fifth embodiment of the present invention. [Figure 18]

[0022] FIG. 18 is a schematic view showing a part of the mask structure for the deposition apparatus according to the sixth embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0009] Detailed Description

[0023] Specific structures and configurations will be described, but this is merely for illustrative purposes. Those skilled in the art will understand that other structures and configurations are possible without departing from the intent and scope of the present disclosure. It will be apparent to those skilled in the art that the present invention can also be implemented in various other forms.

[0010]

[0024] References to "one embodiment", "any embodiment", "some embodiments", etc. in the specification indicate that the described embodiments may include a particular feature, structure, or characteristic, but each embodiment is not necessarily required to include that feature, structure, or characteristic. Further, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, characteristic is described in relation to any embodiment, whether or not it is explicitly described, it is within the knowledge of those skilled in the art to affect such feature, structure, or characteristic in relation to other embodiments.

[0011]

[0025] The terms such as first, second, etc. are used to describe various elements, components, regions, layers, and / or parts, but it should be understood that these elements, components, regions, layers, and / or parts are not limited to these terms. These terms are simply used to distinguish one element, component, region, layer, and / or part from another. Thus, the first element, component, region, layer, or part described below may also be referred to as the second element, component, region, layer, or part without departing from the description of the present disclosure.

[0012]

[0026] The meanings of "on", "above", and "over" include not only the meaning of "directly above" anything, but also the meaning of "above" something with intermediate functions or layers in between. It should be understood that "above" and "over" include not only the meaning of "higher than" or "above" something, but also the meaning of "higher than" or "above" something without intermediate functions or layers in between (i.e., directly above).

[0013]

[0027] Figure 1 is a schematic diagram showing a deposition apparatus according to a first embodiment of the present invention, and Figure 2 is a schematic diagram showing a top view of a mask structure for a deposition apparatus in this embodiment. As shown in Figures 1 and 2, a mask structure 20 for a deposition apparatus is provided. The mask structure 20 includes a group of multiple first segments 22 and a group of multiple second segments 24. The first segment groups 22 are arranged in a direction surrounding the central axis AX (for example, direction D3 shown in Figure 2) and spaced apart from each other. The second segment groups 24 are provided above the first segment groups 22. Each of the second segment groups 24 overlaps with two adjacent segments of the first segment groups 22 in a vertical direction D1 parallel to the direction in which the central axis AX extends. The mask structure 20 may be used in deposition apparatuses such as the deposition apparatus 100 shown in Figure 1, but is not limited thereto. In other words, the mask structure 20 for a deposition apparatus of the present invention may also be applied to deposition apparatuses that differ from the deposition apparatus 100 in terms of structural design, deposition method, and / or other aspects.

[0014]

[0028] In some embodiments, the second group of segments 24 may also be arranged in a direction D3 surrounding the central axis AX, and the direction D3 surrounding the central axis AX may be circumferential, but is not limited thereto. The second group of segments 24 may be spaced apart from each other, and each of the second group of segments 24 may be spaced apart from the first group of segments 22. In some embodiments, each of the first group of segments 22 and each of the second group of segments 24 may be arc-shaped in a top view of the mask structure 20 (e.g., Figure 2), but is not limited thereto. Furthermore, each of the second group of segments 24 may overlap with the gap G1 between two adjacent segments of the first group of segments 22 in the vertical direction D1, and the projected area of ​​each of the second group of segments 24 in the vertical direction D1 (e.g., the area of ​​one of the second group of segments 24 shown in Figure 2) may be smaller than the projected area of ​​each of the first group of segments 22 in the vertical direction D1 (e.g., the area of ​​one of the first group of segments 22 shown in Figure 2), but is not limited thereto. In some embodiments, the first segment group 22 may be considered as a main segment group having a relatively large area in the mask structure 20, and the second segment group 24 may be considered as a sub-segment group having a relatively small area in the mask structure 20, but is not limited thereto. In some embodiments, the projected area of ​​each of the second segment group 24 in the vertical direction D1 may be less than or equal to the projected area of ​​each of the first segment group 22 in the vertical direction D1. In some embodiments, in the horizontal direction (radial direction of a horizontal plane perpendicular to the vertical direction D1), the outer circumference size of each of the second segment group 24 may be larger than the outer circumference size of each of the first segment group.

[0015]

[0029] In some embodiments, each material of the first segment 22 group and each material of the second segment 24 group may include quartz, metal, or other suitable material having high heat resistance, a low coefficient of thermal expansion, and / or high stability to avoid reaction between the deposited material and the mask structure 20. In some embodiments, depending on the design plan, the material composition of each of the second segment 24 groups may be the same as or different from the material composition of each of the first segment 22 groups. In some embodiments, the number of second segment 24 groups in the mask structure 20 may be equal to the number of first segment 22 groups in the mask structure 20. For example, the number of first segment 22 groups and second segment 24 groups in the mask structure 20 may be four each, but are not limited thereto. In some embodiments, the number of first segment 22 groups and second segment 24 groups in the mask structure 20 may be increased to more precisely control the film suppression region on the substrate during the deposition process.

[0016]

[0030] As shown in Figures 1 and 2, in some embodiments, the deposition apparatus 100 may include a process chamber 90, a stage 10, and the mask structure 20 described above. The stage 10 is at least partially located within the process chamber 90 and includes a substrate holding structure 10S for the substrate 12. The mask structure 20 is located within the process chamber 90, above the stage 10, and covers the peripheral region PR of the substrate 12 held on the stage 10. The deposition apparatus 100 may be used to carry out a deposition process on a substrate 12 that is transported into the process chamber 90 and placed on the stage 10, thereby forming a deposited film on the substrate 12. In some embodiments, the deposition apparatus 100 may include a sputtering deposition apparatus or a deposition apparatus capable of performing other physical vapor phase growth.

[0017]

[0031] In some embodiments, at least a portion of the central axis AX may be located above the stage 10 and extend in a direction perpendicular to the upper surface of the stage 10. In some embodiments, the central axis AX may, but is not limited to, penetrate at least a portion of the stage 10. In some embodiments, the center point of the substrate 12 placed on the stage 10 may, but is not limited to, coincide with the central axis AX in the vertical direction D1. The center point of the substrate 12 may be the geometric center, center of mass, and / or center of gravity of the substrate 12. The substrate 12 may include a semiconductor substrate or a non-semiconductor substrate. The semiconductor substrate may, but is not limited to, a silicon substrate, an epitaxial silicon substrate, a silicon germanium substrate, a silicon carbide substrate, or a silicon-on-insulator (SOI) substrate. The non-semiconductor substrate may include a glass substrate, a plastic substrate, a ceramic substrate, a stainless steel substrate, or a substrate made of other suitable materials.

[0018]

[0032] In some embodiments, the loading apparatus 100 may further include a group of multiple first support structures 32 and a group of multiple second support structures 34. Each of the first support structure groups 32 may be connected to at least one of the first segment groups 22, and each of the second support structure groups 34 may be connected to at least one of the second segment groups 24. In some embodiments, each of the first support structure groups 32 may be located below a corresponding first segment 22, and each of the second support structure groups 34 may be located below a corresponding second segment 24, with at least a portion of them located in the gap G1 between two adjacent first segment groups 22 in direction D3, but not limited thereto. In some embodiments, the first support structure group 32 and the second support structure group 34 may be used to support the first segment group 22 and the second segment group 24 of the mask structure 20, and to move the first segment group 22 and the second segment group 24 vertically (for example, in the vertical direction) and / or horizontally (for example, in the horizontal direction D2 shown in Figure 1), respectively.

[0019]

[0033] For example, as shown in Figures 1 and 2, one of the first segment 22 group may be movable in the horizontal direction D21, one of the second segment 24 group may be movable in the horizontal direction D22, one of the first segment 22 group may be movable in the horizontal direction D23, one of the second segment 24 group may be movable in the horizontal direction D24, one of the first segment 22 group may be movable in the horizontal direction D25, one of the second segment 24 group may be movable in the horizontal direction D26, one of the first segment 22 group may be movable in the horizontal direction D27, and one of the second segment 24 group may be movable in the horizontal direction D28, but are not limited to these. The horizontal directions D21-D28 may be considered as radial directions outward from the central axis AX, but are not limited to this. In other words, the first segment 22 group and the second segment 24 group may be moved in a direction toward the central axis AX or away from the central axis AX, respectively. In some embodiments, in order to control the region of the substrate 12 where the mask structure 20 overlaps, the distance between the central axis AX in the horizontal direction and the inner edge E1 of each of the first segment 22 group may be substantially equal to the distance between the central axis AX in the horizontal direction and the inner edge E2 of each of the second segment 24 group, but is not limited thereto. In some embodiments, for example, the distance between the central axis AX and the inner edge E1 of each of the first segment 22 group may be substantially equal to the distance between the central axis AX and the inner edge E2 of each of the second segment 24 group with a tolerance of ±2%. In other words, preferably, the distance between the central axis AX and each inner edge E1 of the first segment group 22 may be equal to the distance between the central axis AX and each inner edge E2 of the second segment group 24; however, due to operational errors, the distance between the central axis AX and each inner edge E1 of the first segment group 22 may be in the range of 0.98 to 1.02 times the distance between the central axis AX and each inner edge E2 of the second segment group 24. In some embodiments, the distance between the central axis AX and each inner edge E1 of the first segment group is at least partially equal to the distance between the central axis AX and each inner edge E2 of the second segment group.

[0020]

[0034] Figure 3 is a schematic diagram showing a cross-sectional view of a mask structure 20 for a deposition apparatus according to a first embodiment of the present invention. As shown in Figures 1-3, in some embodiments, the length L1 of each of the first segments 22 in the horizontal direction may be shorter than the length L2 of each of the second segments 24 in the horizontal direction in order to secure space for the second support structure 34 and / or to avoid accumulation of deposited film on the path through which the second segments 24 move horizontally, but is not limited thereto. In some embodiments, the inner walls SW11 and SW21 of each of the first segments 22 and second segments 24 may be inclined so that the deposited film deposited on each of the inner walls SW11 and SW21 of each of the second segments 24 does not peel off from the inner walls SW11 and SW21, respectively. Also, the outer walls SW12 of each of the first segments 22 and second segments 24 may be inclined to reduce the total amount of deposited film formed on the first segments 22 and second segments 24. Furthermore, in this specification, the distance between the central axis AX and a relatively inner position and / or a relatively inner portion in the horizontal direction is shorter than the distance between the central axis AX and a relatively outer position and / or a relatively outer portion in the horizontal direction. The inner portion of each object may be closer to the central axis AX in the horizontal direction than the outer portion of the object.

[0021]

[0035] Furthermore, especially when the projected area of ​​each first segment 22 in the vertical direction D1 differs from the projected area of ​​each second segment 24 in the vertical direction D1, the inner wall SW11 may have a different inclination than the inner wall SW21 in order to reduce the difference in the amount of deposition between the deposited film formed on each first segment 22 and the deposited film formed on each second segment 24. For example, the inclination of the inner wall SW21 may be smaller than that of the inner wall SW11, and the angle between the inner wall SW21 and the lower surface of the second segment 24 may be smaller than the angle between the inner wall SW11 and the lower surface of the first segment 22, but is not limited thereto. However, the shapes of the first segment 22 and the second segment 24 in the present invention are not limited to the shapes shown in Figure 3, and other suitable shapes may be applied according to other design plans. Furthermore, in order to separate the first segment 22 and the second segment 24, there may be a gap G2 between the first segment 22 and the second segment 24 in the vertical direction D1, and the distance DS3 between the first segment 22 and the second segment 24 in the vertical direction D1 may be adjusted in order to reduce the influence of the second segment 24 group on controlling the aforementioned film suppression region. For example, the distance DS3 between the first segment 22 and the second segment 24 in the vertical direction D1 may be in the range of 0.01 mm to 6 mm, but is not limited thereto.

[0022]

[0036] Figures 4-7 are schematic diagrams showing the operation method of the deposition apparatus in this embodiment, where Figure 4 is a schematic diagram showing the positions of the mask structure 20 and the first substrate 12A in the first deposition process, Figure 5 is a schematic diagram showing the first substrate 12A after the first deposition process, Figure 6 is a schematic diagram showing the positions of the mask structure 20 and the second substrate 12B in the second deposition process, and Figure 7 is a schematic diagram showing the second substrate 12B after the second deposition process. As shown in Figures 1 and 4-7, the operation method of the deposition apparatus 100 includes, but is not limited to, the following steps. First, the above-described deposition apparatus 100 is prepared. Next, the deposition process is carried out on each of the plurality of substrates 12. For example, as shown in Figures 1, 4 and 5, the deposition apparatus 100 may carry out the first deposition process on the first substrate 12A to form a deposited film 14A on the first substrate 12A, and a first film suppression region SR1 may be formed on the peripheral region PR of the first substrate 12A after the first deposition process. In the first deposition process, the mask structure 20 covering at least a portion of the peripheral region PR of the first substrate 12A prevents the deposition film 14A from forming on the first film suppression region SR1. Therefore, in the first deposition process, the first film suppression region SR1 can be formed corresponding to the positions of the first segment group 22 and the second segment group 24. As shown in Figures 1, 6, and 7, the deposition apparatus 100 may perform a second deposition process on the second substrate 12B to form a deposition film 14B on the second substrate 12B, and a second film suppression region SR2 may be formed on the peripheral region PR of the second substrate 12B after the second deposition process. In the second deposition process, the mask structure 20 covering at least a portion of the peripheral region PR of the second substrate 12B prevents the deposition film 14B from forming on the second film suppression region SR2. Therefore, in the second deposition process, the second film suppression region SR2 can be formed corresponding to the positions of the first segment group 22 and the second segment group 24. In some embodiments, the mask structure 20 is spaced apart from the substrate 12 so as not to be in direct contact with it, in order to protect the substrate 12 and / or the material formed on the substrate 12.

[0023]

[0037] As shown in Figures 1 and 4-7, in some embodiments, during the deposition process (e.g., the first deposition process and the second deposition process described above), the center point CP of the substrate 12 placed on the stage 10 may coincide with the central axis AX in the vertical direction D1, and in each deposition process, the distance between one inner edge E1 of the first group of segments 22 and the central axis AX may be substantially equal to the distance between one inner edge of the second group of segments 24 and the central axis AX. For example, in the first deposition process (shown in Figure 4), the distance DS1 between the central axis AX in the horizontal direction and each inner edge E1 of the first group of segments 22 may be substantially equal to the distance DS2 between the central axis AX in the horizontal direction and each inner edge E2 of the second group of segments 24. In other words, the distance DS1 between the central axis AX in the horizontal direction and each inner edge E1 of the first segment 22 group, which is shown in an arched shape, may be at least partially equal to the distance DS2 between the central axis AX in the horizontal direction and each inner edge E2 of the second segment 24 group, which is shown in an arched shape. In the second deposition process (shown in Figure 6), the distance DS1' between the central axis AX in the horizontal direction and each inner edge E1 of the first segment 22 group, which is shown in an arched shape, may be substantially equal to the distance DS2' between the central axis AX in the horizontal direction and each inner edge E2 of the second segment 24 group, which is shown in an arched shape. In other words, the distance DS1' between the central axis AX in the horizontal direction and each inner edge E1 of the first segment 22 group, which is shown in an arched shape, may be at least partially equal to the distance DS2' between the central axis AX in the horizontal direction and each inner edge E2 of the second segment 24 group, which is shown in an arched shape.

[0024]

[0038] In some embodiments, the positions of the first segment 22 group and the second segment 24 group may be adjusted horizontally between different deposition processes (e.g., the first deposition process and the second deposition process described above). For example, in some embodiments, the first deposition process may be performed before the second deposition process, and in order to reduce the area of ​​the substrate 12 over which the mask structure 20 overlaps in the second deposition process, the first segment 22 group and the second segment 24 group may be moved away from the central axis AX after the first deposition process and before the second deposition process. In other words, the distance DS1 between the inner edge E1 of one of the first segment 22 group and the central axis AX in the first deposition process may be different from the distance DS1' between the inner edge E1 of the first segment 22 and the central axis AX in the second deposition process, and the distance DS2 between the inner edge E2 of one of the second segment 24 group and the central axis AX in the first deposition process may be different from the distance DS2' between the inner edge E2 of the second segment 24 and the central axis AX in the second deposition process. In some embodiments, the width W1 of the first film suppression region SR1 formed on the first substrate 12A may be larger than the width W2 of the second film suppression region SR2 formed on the second substrate 12B, but is not limited thereto. In other words, the second film suppression region SR2 may be different from the first film suppression region SR1, but is not limited thereto.

[0025]

[0039] In some embodiments, the first deposition process may be performed after the second deposition process, and in order to increase the area of ​​the substrate 12 over which the mask structure 20 overlaps in the first deposition process, the first segment group 22 and the second segment group 24 may be moved toward the central axis AX, respectively, after the second deposition process and before the first deposition process. In other words, in order to control the film suppression region SR formed on each of the substrates 12, the first segment group 22 and the second segment group 24 may be moved toward the central axis AX or toward the central axis AX, respectively. In some embodiments, by adjusting the positions of the first segment group 22 and the second segment group 24 horizontally between the first deposition process and the second deposition process, the width W1 of the first film suppression region SR1 may differ from the width W2 of the second film suppression region SR2. In other words, without the hassle of changing conventional clamping rings for different deposition processes, deposition processes having different requirements regarding the film suppression region can be performed sequentially in the deposition apparatus of the present invention. Accordingly, the throughput of the deposition apparatus can be improved.

[0026]

[0040] Figure 8 is a schematic diagram showing a mask structure after a deposition process according to one embodiment of the present invention. As shown in Figure 8, after multiple deposition processes, the deposited film 14 accumulates on the first segment 22 and the second segment 24, and the deposited film 14 accumulated on the inner edges of the first segment 22 and the second segment 24 may affect overlapping regions on the substrate during the deposition process. Therefore, in some embodiments, the positions of the first segment group and the second segment group may be adjusted horizontally between different deposition processes in order to substantially maintain the film suppression regions formed on each substrate. For example, as shown in Figure 4-8, in some embodiments, the first deposition process is performed before the second deposition process, and the first segment group 22 and the second segment group 24 may be moved away from the central axis AX after the first deposition process and before the second deposition process, such that the region of the second substrate 12B where the mask structure 20 and the deposited film 14 formed on the mask structure 20 overlap in the second deposition process substantially coincides with the region of the first substrate 12A where the mask structure 20 and the deposited film 14 formed on the mask structure 20 overlap in the first deposition process. In other words, when the positions of the first segment group 22 and the second segment group 24 are adjusted horizontally after the first deposition process and before the second deposition process, the width W1 of the first film suppression region SR1 may be substantially equal to the width W2 of the second film suppression region SR2. In some embodiments, for example, the width W1 of the first film suppression region SR1 may be substantially equal to the width W2 of the second film suppression region SR2 with a tolerance of ±10%. In other words, width W1 may be equal to width W2, or width W1 may be in the range of 0.9 to 1.1 times width W2 due to unavoidable process changes. For example, the number of first segment groups 22 and the number of second segment groups 24 of the mask structure 20 may be increased to five or more, but are not limited to this, so as to stay within the acceptable range.

[0027]

[0041] In some embodiments, after a deposition process performed between the first and second deposition processes, the positions of the first and second segments 22 and 24 may be adjusted horizontally according to the deposited film 14 accumulated on the inner edges of the first and second segments 24. For example, in some embodiments, the width W3 of the deposited film 14 accumulated on the inner edges of the first and second segments 24 may be calculated by integrating the cumulative power consumption of the deposition apparatus with a coefficient, and the first and second segments 22 and 24 may be moved away from the central axis AX by a distance corresponding to the width W3, but are not limited thereto. In some embodiments, the positions of the first and second segments 22 and 24 may be gradually adjusted between the deposition processes performed between the first and second deposition processes, but are not limited thereto. In some embodiments, the width W3 calculated for the deposited film 14 accumulated on the inner edges of the first and second segments 24 can be used as a criterion for determining whether the mask structure 20 should be replaced and / or cleaned.

[0028]

[0042] Figure 9 is a schematic diagram showing the loading operation in the operation method of the deposition apparatus according to the first embodiment of the present invention, and Figure 10 is a schematic top view showing the loading operation in the operation method of the deposition apparatus according to the first embodiment of the present invention. As shown in Figures 9 and 10, the deposition apparatus may further include a plurality of lift structures 40 and a loading structure 50. In some embodiments, the lift structures 40 may be vertically movable to lift the substrate 12 or to position the substrate 12 on the holding structure 10S, and the loading structure 50 may be used to transport the substrate 12 into the process chamber 90 and to transport the substrate 12 out of the process chamber 90. In the loading operation according to one embodiment of the present invention, the lift structures 40 may penetrate the holding structure 10S in order to lift the substrate 12 to a position away from the holding structure 10S, and the loading structure 50 may extend into the space between the substrate 12 and the holding structure 10S in order to transport the substrate 12 out of the process chamber 90 after the deposition process performed on the substrate 12. Similarly, the substrate 12 may be transported into the process chamber 90 by the mounting structure 50 and placed on the lift structure 40, and after the mounting structure 50 has been moved out of the process chamber 90, the lift structure 40 may be moved downward to place the substrate 12 on the holding structure 10S. In some embodiments, to prevent interference with the above-described mounting operation, the first segment 22 group and the second segment 24 group of the mask structure 20 may be moved horizontally and / or vertically by the first support structure 32 group, the second support structure 34 group, and / or other mechanical structures (not shown). For example, to prevent overlap with the substrate 12 in the vertical direction D1, the first segment 22 group and the second segment 24 group of the mask structure 20 may be moved horizontally, and the position of the substrate 12 lifted by the lift structure 40 during the above-described mounting operation may be higher than the position of the mask structure 20 in the vertical direction D1, but is not limited to this. In some embodiments, for the above-described mounting operation, the first segment group 22 and the second segment group 24 of the mask structure 20 may be moved away from the central axis AX without being moved upward, or they may be moved away from the central axis AX and then moved slightly upward.

[0029]

[0043] Incidentally, the loading operation in the operating method of the deposition apparatus according to the present invention is not limited to the method described above, and other suitable loading operations can also be applied to the loading operation in the operating method of the deposition apparatus according to the present invention.

[0030]

[0044] Other embodiments of the present invention will now be described. For the sake of simplicity, the same elements are denoted by the same reference numerals in each of the following embodiments. To facilitate understanding of the differences between embodiments, the differences between different embodiments will be described in detail, while descriptions of identical features will be omitted.

[0031]

[0045] Figure 11 is a schematic diagram showing a top view of a mask structure for a deposition apparatus according to a second embodiment of the present invention. As shown in Figure 11, in the deposition apparatus of this embodiment, in order to improve the support performance of the first segment 22 group and the second segment 24 group, two or more first support structures 32 may be connected to one of the first segment 22 group, and two or more second support structures 34 may be connected to one of the second segment 24 group. In some embodiments, the second support structure 34 may be provided below the outer portion of the corresponding second segment 24 to prevent interference with the movement of the first segment 22 group, but is not limited thereto.

[0032]

[0046] Figure 12 is a schematic diagram showing the loading operation in the operation method of the deposition apparatus according to the third embodiment of the present invention, Figure 13 is a schematic top view showing the loading operation in the operation method of the deposition apparatus according to this embodiment, and Figure 14 is a schematic diagram showing a part of the mask structure 20 for the deposition apparatus in this embodiment. As shown in Figures 12 and 13, in the loading operation of this embodiment, the lift structure 40 may penetrate the holding structure 10S in order to lift the substrate 12 to a position away from the holding structure 10S, and the loading structure 50 may extend into the space between the substrate 12 and the holding structure 10S in order to transport the substrate 12 out of the process chamber 90 after the deposition process performed on the substrate 12. Similarly, the substrate 12 may be transported into the process chamber 90 by the loading structure 50 and placed on the lift structure 40, and after the loading structure 50 has been moved out of the process chamber 90, the lift structure 40 may be moved downward to place the substrate 12 on the holding structure 10S. In some embodiments, the first segment group 22 and the second segment group 24 of the mask structure 20 may be moved horizontally by the first support structure group 32, the second support structure group 34, and / or other mechanical structures before the mounting operation described above. For example, the first segment group 22 and the second segment group 24 of the mask structure 20 may be moved upward while overlapping with the substrate 12 in the vertical direction D1, and the position of the substrate 12 lifted by the lift structure 40 during the mounting operation described above may be lower than the position of the mask structure 20 in the vertical direction D1, but is not limited to this.

[0033]

[0047] As shown in Figures 13 and 14, in this embodiment, in order to prevent interference with the above-mentioned mounting operation, a part of one of the first support structure groups 32 may be provided below one of the second segment groups 24 in the vertical direction D1, and a part of one of the second support structure groups 34 may be provided below one of the first segment groups 22 in the vertical direction D1. For example, in some embodiments, one of the first support structure groups 32 may include a first part 32A, a second part 32B, and a third part 32C, and each of the second support structure groups 34 may include a first part 34A, a second part 34B, and a third part 34C. The first portion 32A of the first support structure 32 may extend in the vertical direction D1 and be provided below the corresponding first segment 22; the second portion 32B of the first support structure 32 may extend in a direction surrounding the central axis AX, with part provided below the corresponding first segment 22, part provided below one second segment 24, and part provided below another first segment 22 adjacent to the corresponding first segment 22; and the third portion 32C of the first support structure 32 may extend in the vertical direction D1 and be provided below another first segment 22 adjacent to the corresponding first segment 22. The first portion 32A may be directly connected to the corresponding first segment 22, and the second portion 32B may be provided between the first portion 32A and the third portion 32C to connect the first portion 32A and the third portion 32C. Furthermore, the first portion 34A of the second support structure 34 may extend in the vertical direction D1 and be provided below the corresponding second segment 24, the second portion 34B of the second support structure 34 may extend in a direction surrounding the central axis AX, with part provided below the corresponding second segment 24 and part provided below one first segment 22 adjacent to the corresponding second segment 24, and the third portion 34C of the second support structure 34 may extend in the vertical direction D1 and be provided below one first segment 22 adjacent to the corresponding second segment 24. The first portion 34A may be directly connected to the corresponding second segment 24, and the second portion 34B may be provided between the first portion 34A and the third portion 34C to connect the first portion 34A and the third portion 34C.

[0034]

[0048] By modifying at least some of the structures of the first support structure group 32 and at least some of the structures of the second support structure group 34 as shown in Figures 13 and 14, interference between the movement of the mounting structure 50 and the substrate 12 placed on the mounting structure 50 during the above-mentioned mounting operation and the first support structure group 32 and the second support structure group 34 can be avoided. Therefore, the first segment group 22 and the second segment group 24 of the mask structure 20 do not need to be moved away from the central axis AX to a position in the vertical direction D1 that does not overlap with the substrate 12 for the above-mentioned mounting operation, and for this reason, the size of the process chamber 90 in this embodiment may be reduced. In some embodiments, for the above-mentioned mounting operation, the first segment group 22 and the second segment group 24 of the mask structure 20 may be moved upward without being moved away from the central axis AX, or they may be moved upward and slightly away from the central axis AX.

[0035]

[0049] Figure 15 is a schematic diagram showing a top view of a mask structure 20 for a deposition apparatus according to a fourth embodiment of the present invention, and Figure 16 is a schematic diagram showing a part of the mask structure 20 of this embodiment. As shown in Figures 15 and 16, one of the first support structure groups 32 may include two first parts 32A, a second part 32B, a third part 32C, a fourth part 32D, and a fifth part 32E. For the sake of simplicity, Figure 15 omits the illustration of the second part 32B, the third part 32C, and the fifth part 32E shown in Figure 16. In some embodiments, the fourth part 32D of the first support structure 32 may extend in a direction surrounding the central axis AX and be located below the corresponding first segment 22, and the fifth part 32E of the first support structure 32 may extend in the vertical direction D1 and be located between the fourth part 32D and the second part 32B. The fourth section 32D may be connected to two first sections 32A, respectively, and the fifth section 32E may be connected to the fourth section 32D and the second section 32B, respectively. By providing multiple first sections 32A connected to one first segment 22, the support strength and / or support stability of the first support structure 32 can be improved.

[0036]

[0050] Figure 17 is a schematic diagram showing a part of a mask structure for a deposition apparatus according to a fifth embodiment of the present invention. As shown in Figure 17, the first support structure 32 may be connected to two adjacent first segments 22. For example, the first support structure 32 may have two first parts 32A, each connected to two adjacent first segments 22, and the second part 32B of the first support structure 32 may be connected to the two first parts 32A. In some embodiments, in order to simplify the first support structure 32 and to avoid interference with the above-mentioned mounting operation, at least one of the first support structure 32 may be connected to two adjacent first segments 22. In some embodiments, the second part 32B may be expandable and contractible in order to move different first segments 22 connected to the second part 32B horizontally to maintain the width of the corresponding film suppression area.

[0037]

[0051] Figure 18 is a schematic diagram showing a part of a mask structure 20 for a deposition apparatus according to a sixth embodiment of the present invention. As shown in Figure 18, in this embodiment, the length L1 of the first segment 22 in the horizontal direction may be longer than the length L2 of the second segment 24 in the horizontal direction, and the second support structure corresponding to the second segment 24 may be provided between two adjacent first segments 22. In some embodiments, the outer circumference size of each of the first segment 22 group in the horizontal direction (radial direction in a horizontal plane perpendicular to the vertical direction D1) may be larger than the outer circumference size of each of the second segment 24 group. In some embodiments, the frequency of cleaning the mask structure 20 may be increased and / or the gap G2 between the first segment 22 and the second segment 24 in the vertical direction D1 may be relatively large in order to avoid interference between the deposited film deposited on the first segment 22 and the path through which the second segment 24 moves in the horizontal direction, but this is not limited to this. In some embodiments, the size of the process chamber 90 may be reduced, and the second segment 24 may be made relatively smaller to reduce weight, but this is not limited to this.

[0038]

[0052] Based on the above, the present invention provides a mask structure for a deposition apparatus, a deposition apparatus, and a method for operating the deposition apparatus, which utilize a mask structure including a first group of segments spaced apart from each other and a second group of segments that overlap with the adjacent first group of segments, in order to control the film suppression area on the substrate more accurately and easily during the deposition process.

[0039]

[0053] It will be readily apparent to those skilled in the art that various modifications and variations of the apparatus and method can be made while maintaining the teachings of the present invention. Accordingly, the above disclosure should be interpreted as being limited only by the boundaries and scope of the appended claims.

[0040] The following additional information is disclosed regarding the embodiments described above. (Note 1) A first group of segments arranged in a direction surrounding the central axis and spaced apart from each other, A second segment group is provided above the first segment group, and each of these segments overlaps with two adjacent segments of the first segment group in a vertical direction parallel to the direction in which the central axis extends. A mask structure for a deposition apparatus, characterized by including the following: (Note 2) The mask structure for a deposition apparatus according to Note 1, characterized in that each of the second segment group overlaps with the gap between two adjacent segments of the first segment group in the vertical direction. (Note 3) The mask structure for a deposition apparatus according to Note 1 or 2, characterized in that each of the second segment group is spaced apart from the first segment group. (Note 4) The mask structure for a deposition apparatus according to any one of Notes 1 to 3, characterized in that the projected area of ​​each of the second segment group in the vertical direction is smaller than the projected area of ​​each of the first segment group in the vertical direction. (Note 5) The mask structure for a deposition apparatus according to any one of Notes 1 to 4, characterized in that the direction surrounding the central axis is the circumferential direction. (Note 6) The mask structure for a deposition apparatus according to any one of Notes 1 to 5, characterized in that the length of each of the first segment group in the radial direction outward from the central axis is less than the length of each of the second segment group in the radial direction outward from the central axis.

[0041] (Note 7) Process chamber and, A stage, at least partially provided within the process chamber, including a substrate holding structure, A mask structure provided within the process chamber, located above the stage, and covering the peripheral area of ​​the substrate held on the stage, Includes, The aforementioned mask structure is A first group of segments arranged in a direction surrounding the central axis and spaced apart from each other, A second segment group is provided above the first segment group, and each of these segments overlaps with two adjacent segments of the first segment group in a vertical direction parallel to the direction in which the central axis extends. A deposition apparatus characterized by including (Note 8) The loading apparatus according to Note 7, characterized in that at least a portion of the central axis is provided above the stage and extends in a direction perpendicular to the upper surface of the stage. (Note 9) A first support structure group, each connected to at least one of the first segment group, A second support structure group, each connected to at least one of the second segment group, The deposition apparatus according to Appendix 7 or 8, characterized by including the following: (Note 10) The loading apparatus according to Note 9, characterized in that a part of one of the second support structure group is provided below one of the first segment group in the vertical direction. (Note 11) The loading apparatus according to Note 9 or 10, characterized in that a part of one of the first support structure groups is provided below one of the second segment groups in the vertical direction. (Note 12) The loading apparatus according to any one of Notes 7 to 11, characterized in that each of the second segment group overlaps with the gap between two adjacent segments of the first segment group in the vertical direction. (Note 13) The deposition apparatus according to any one of Notes 7 to 12, characterized in that each of the second segment group is spaced apart from the first segment group. (Note 14) The deposition apparatus according to any one of Notes 7 to 13, characterized in that the center point of the substrate coincides with the central axis in the vertical direction.

[0042] (Note 15) Process chamber and, A stage, at least partially provided within the process chamber, including a substrate holding structure, A mask structure provided within the process chamber, located above the stage, and covering the peripheral area of ​​the substrate held on the stage, Includes, The aforementioned mask structure is A first group of segments arranged in a direction surrounding the central axis and spaced apart from each other, A second segment group is provided above the first segment group, and each of these segments overlaps with two adjacent segments of the first segment group in a vertical direction parallel to the direction in which the central axis extends. The process of preparing a deposition apparatus including, A step of adjusting the positions of the first segment group and the second segment group horizontally between different deposition processes. A method for operating a deposition apparatus, characterized by including the following: (Note 16) The method for operating the deposition apparatus according to Note 15, characterized in that, in each of the deposition processes, the distance between the inner edge of one of the first segment group and the central axis is at least partially equal to the distance between the inner edge of one of the second segment group and the central axis. (Note 17) The process of carrying out the first deposition process on the first substrate, A step of performing a second deposition process on a second substrate. Includes, After the first deposition process, a first film suppression region is formed on the peripheral region of the first substrate, and the first film suppression region is formed corresponding to the positions of the first segment group and the second segment group in the first deposition process. After the second deposition process, a second film suppression region is formed on the peripheral region of the second substrate, and the second film suppression region is formed corresponding to the positions of the first and second segment groups in the second deposition process. A method for operating the deposition apparatus described in Appendix 15 or 16, characterized by the features described herein. (Note 18) The method for operating the deposition apparatus according to Note 17, characterized in that the distance between the inner edge of one of the first segment group and the central axis in the first deposition process is different from the distance between the inner edge of one of the first segment group and the central axis in the second deposition process. (Note 19) The method for operating the deposition apparatus according to Note 17 or 18, characterized in that the width of the first film suppression region is different from the width of the second film suppression region. (Note 20) The step of adjusting the positions of the first segment group and the second segment group horizontally between different deposition processes is: A method for operating a deposit apparatus according to any one of the appendices 15 to 19, characterized by including a step of moving the first segment group and the second segment group in a direction toward the central axis or away from the central axis, respectively. [Explanation of Symbols]

[0043] 10 stages 10S retention structure 12 circuit boards 20 Mask structure 22. Segment 1 24. Segment 2 32 First support structure 34 Second support structure 40 Lift Structure 50 Mounting structure 90 process chambers 100 Deposition device AX center axis D1 vertical direction D2 horizontal direction E1, E2 inner edge PR related fields SR membrane suppression region [Prior art documents] [Patent Documents]

[0044] [Patent Document 1] Japanese Patent Publication No. 2007-318121 [Patent Document 2] Japanese Patent Publication No. 2018-154851 [Patent Document 3] Japanese Patent Publication No. 2005-120410 [Patent Document 4] Japanese Patent Publication No. 2013-246352 [Patent Document 5] Japanese Patent Publication No. 2013-253316 [Patent Document 6] Japanese Patent Application Publication No. 8-186074 [Patent Document 7] Japanese Patent Application Publication No. 11-150085 [Patent Document 8] Japanese Patent Publication No. 2013-162075 [Patent Document 9] U.S. Patent Application Publication No. 2017 / 0062246 [Patent Document 10] Japanese Patent Publication No. 2000-77506 [Patent Document 11] Japanese Patent Application Publication No. 8-78509 [Patent Document 12] Japanese Patent Application Publication No. 8-264449 [Patent Document 13] Japanese Patent Application Publication No. 9-246187

Claims

1. A first group of segments arranged in a direction surrounding the central axis and spaced apart from each other, A second segment group is provided above the first segment group, and each of these segments overlaps with two adjacent segments of the first segment group in a vertical direction parallel to the direction in which the central axis extends. Includes, A mask structure for a deposition apparatus, characterized in that the length of each of the first segment group in the radial direction outward from the central axis is less than the length of each of the second segment group in the radial direction outward from the central axis.

2. The mask structure for a deposition apparatus according to claim 1, characterized in that each of the second segment group overlaps with the gap between two adjacent segments of the first segment group in the vertical direction.

3. The mask structure for a deposition apparatus according to claim 1 or 2, characterized in that each of the second segment group is spaced apart from the first segment group.

4. The mask structure for a deposition apparatus according to any one of claims 1 to 3, characterized in that the projected area of ​​each of the second segment group in the vertical direction is smaller than the projected area of ​​each of the first segment group in the vertical direction.

5. The mask structure for a deposition apparatus according to any one of claims 1 to 4, characterized in that the direction surrounding the central axis is the circumferential direction.

6. process chamber and A stage, at least partially provided within the process chamber, including a substrate holding structure, A mask structure provided within the process chamber, located above the stage, and covering the peripheral area of ​​the substrate held on the stage, Includes, The aforementioned mask structure is A first group of segments arranged in a direction surrounding the central axis and spaced apart from each other, A second segment group is provided above the first segment group, and each of these segments overlaps with two adjacent segments of the first segment group in a vertical direction parallel to the direction in which the central axis extends. Includes, A deposition apparatus characterized in that the length of each of the first segment group in the radial direction outward from the central axis is less than the length of each of the second segment group in the radial direction outward from the central axis.

7. A first support structure group, each connected to at least one of the first segment group, A second support structure group, each connected to at least one of the second segment group, The deposition apparatus according to claim 6, characterized by including the following:

8. The loading apparatus according to claim 7, characterized in that a part of one of the second support structure group is provided below one of the first segment group in the vertical direction.

9. The loading apparatus according to claim 7 or 8, characterized in that a part of one of the first support structure group is provided below one of the second segment group in the vertical direction.

10. process chamber and A stage, at least partially provided within the process chamber, including a substrate holding structure, A mask structure provided within the process chamber, located above the stage, and covering the peripheral area of ​​the substrate held on the stage, Includes, The aforementioned mask structure is A first group of segments arranged in a direction surrounding the central axis and spaced apart from each other, A second segment group is provided above the first segment group, and each of these segments overlaps with two adjacent segments of the first segment group in a vertical direction parallel to the direction in which the central axis extends. Includes, A step of preparing a deposition apparatus in which the length of each of the first segment group in the radial direction outward from the central axis is less than the length of each of the second segment group in the radial direction outward from the central axis, A step of adjusting the positions of the first segment group and the second segment group in the horizontal direction between different deposition processes. A method for operating a deposition apparatus, characterized by including the following:

11. The method for operating the deposition apparatus according to claim 10, characterized in that, in each of the deposition processes, the distance between the inner edge of one of the first segment group and the central axis is at least partially equal to the distance between the inner edge of one of the second segment group and the central axis.

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