Method and apparatus for manufacturing light-emitting devices, and laser element substrates.

Abstract

A light-emitting device production method comprising: a step for preparing a first substrate having a plurality of light-emitting bodies; a step for preparing a second substrate having a conductive first bond section, a first pad section electrically connected to the first bond section, and a first solder restricting section positioned between the first bond section and the first pad section, with solder being formed upon the first bond section; a step for bonding, by means of the solder, the second substrate and a first target body selected from the plurality of light-emitting bodies; and a step for transferring the first target body to the second substrate by separating the first and second substrates.

Description

Technical Field

[0001] The present disclosure relates to a method and apparatus for manufacturing a light-emitting device and a laser element substrate.

Background Art

[0002] Patent Document 1 discloses a method of transferring a semiconductor element onto a circuit board.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

[0004] The method for manufacturing a light-emitting device according to the present disclosure includes: Includes a first light-emitting element and a second light-emitting element adjacent to the first light-emitting element. a step of preparing a first substrate provided with a plurality of light emitters; 1 a step of preparing a second substrate having a conductive first bonding portion, a first pad portion electrically connected to the first bonding portion, and a first solder restricting portion positioned between the first bonding portion and the first pad portion, with solder formed on the first bonding portion; 2nd a step of bonding a first one selected from the plurality of light emitters to the second substrate with the solder; Luminous body and a step of separating the first and second substrates and transferring the first one to the second substrate. Third and includes Luminous body a step of 4th transferring the first one to the second substrate. Furthermore, in the third step, the second light-emitting element faces the first solder regulating portion or the first pad portion. .

Brief Description of the Drawings

[0005] [Figure 1] It is a flowchart showing a method for manufacturing a light-emitting device according to the present embodiment. [Figure 2] It is a cross-sectional view showing a method for manufacturing a light-emitting device. [Figure 3] It is a cross-sectional view showing a method for manufacturing a light-emitting device. [Figure 4]Figures 1 to 3 are plan views showing the configuration of the second substrate. [Figure 5] This is a plan view showing an alternative configuration of the second substrate. [Figure 6] This is a plan view showing an alternative configuration of the second substrate. [Figure 7] This is a plan view showing an alternative configuration of the second substrate. [Figure 8] This is a cross-sectional view showing another method for manufacturing a light-emitting device. [Figure 9] Figure 8 is a plan view showing the second substrate. [Figure 10] This is a plan view showing an alternative configuration of the second substrate. [Figure 11] This is a cross-sectional view showing the bonding state between the second substrate and the light-emitting element. [Figure 12] This is a cross-sectional view showing the bonding state between the second substrate and the light-emitting element. [Figure 13] This is a block diagram showing the configuration of a manufacturing apparatus for a light-emitting device according to this embodiment. [Figure 14] This is a perspective view showing the configuration of the laser element substrate. [Figure 15] This is a perspective view showing an alternative configuration of the laser element substrate. [Figure 16] This is a perspective view showing the configuration of a laser element. [Figure 17] This is a perspective view showing the configuration of the laser module. [Figure 18] This is a cross-sectional view showing the manufacturing method of the first substrate. [Figure 19] This is a cross-sectional view showing an example of the base substrate configuration. [Figure 20] This is a cross-sectional view showing an example of the configuration of the first substrate. [Modes for carrying out the invention]

[0006] (Selective transcription) FIG. 1 is a flowchart showing a method for manufacturing a light-emitting device according to the present embodiment. FIGS. 2 and 3 are cross-sectional views showing the method for manufacturing the light-emitting device. FIG. 4 is a plan view showing the configuration of the second substrate in FIGS. 1 to 3. As shown in FIGS. 1 to 4, the method for manufacturing a light-emitting device according to the present embodiment includes a step of preparing a first substrate 10 including a plurality of light-emitting bodies 2, a conductive first bonding portion S1, a first pad portion P1 electrically connected to the first bonding portion S1, and a first solder restricting portion KF located between the first bonding portion S1 and the first pad portion P1, and preparing a second substrate 20 having a solder H1 formed on the first bonding portion S1. The method also includes a step of bonding a first object 2A selected from the plurality of light-emitting bodies 2 to the second substrate 20, and a step of separating the first and second substrates 10 and 20 and transferring the first object 2A to the second substrate 20. The first bonding portion S1 having the solder H1 formed on its upper surface is used for bonding (solder bonding) to the light-emitting body 2, and the conductive first pad portion P1 is used for connection to the outside (for example, wire bonding).

[0007] By selectively transferring a first object group FG including the first object 2A to the second substrate 20, a light-emitting element substrate 25 (light-emitting device) can be obtained. The light-emitting element substrate 25 may be divided into a plurality of pieces (described later), or the light-emitting element substrate 25 may be separated into individual pieces to obtain a laser element or the like (light-emitting device).

[0008] In the present embodiment, the first solder restricting portion KF restricts the wetting spread of the molten solder H1 on the first bonding portion S1. Thereby, the possibility that the solder H1 spreads beyond the first object 2A (the target of selective transfer) and causes a selective transfer failure is reduced. Also, the possibility that the molten solder H1 spreads to the first pad P1 and causes a problem in a subsequent process (for example, wire bonding failure) is reduced.

[0009] Each light-emitting body 2 has a first electrode D1, and while heating at least one of the first and second substrates 10 and 20, the first and second substrates 10 and 20 may be brought close to each other so that the molten solder H1 contacts the first electrode D1 of the first object 2A selected from the plurality of light-emitting bodies 2.

[0010] A plurality of light emitters 2 may be arranged in the X direction, and the first joint portion S1 and the first pad portion P1 may be arranged in the X direction. The interval between adjacent light emitters 2 may be smaller than the size of the first pad portion P1 in the X direction, and may also be smaller than the size of the first joint portion S1 in the X direction.

[0011] The first solder restricting portion KF may have a lower wettability of the solder H1 than the first joint portion S1. The first solder restricting portion KF may be recessed more than the first joint portion S1. Each of the first joint portion S1 and the first pad portion may be a single layer or a laminate containing at least one of gold (Au), chromium (Cr), and platinum (Pt). The first solder restricting portion KF may be non-conductive.

[0012] The first substrate 10 includes a base substrate BS (substrate for crystal growth), and the second substrate 20 includes a base substrate JS. In the first solder restricting portion KF, the base substrate JS may be exposed. In this case, the exposed surface of the base substrate (first solder restricting portion KF) may have a lower wettability of the solder H1 than the first joint portion S1. As the base substrate JS, for example, a silicon substrate or a silicon carbide (SiC) substrate can be used. Single crystal silicon or silicon carbide has a lower wettability of the solder H1 than the first joint portion S1 which is a metal.

[0013] When the base substrate BS includes a silicon substrate (main substrate), a silicon substrate may be used for the base substrate JS. When the base substrate BS includes a silicon carbide substrate, a silicon carbide substrate may be used for the base substrate JS. By making the materials of the main substrate included in the base substrate BS and the base substrate JS the same (that is, making the thermal expansion coefficients the same), good bonding (selective transfer) of the first object 2A and the second substrate 20 becomes possible.

[0014] With the direction perpendicular to the X direction defined as the Y direction, the second substrate 20 is provided with two conductive bridging portions B1 facing each other in the Y direction, sandwiching the first solder regulating portion KF, and the first joint portion S1 and the first pad portion P1 may be electrically connected via the two bridging portions B1. The sum of the size of the first joint portion S1 in the X direction and the size of the first pad portion P1 in the X direction may be greater than the size of the light-emitting body 2 in the X direction. The first electrode D1 may be an anode.

[0015] The first pad portion P1, the first joint portion S1, and the crosslink portion B1 may be composed of a metal pattern M1 formed in the same process, and the first solder regulating portion KF may be an opening in the metal pattern. That is, the first pad portion P1, the first joint portion S1, and the crosslink portions B1 and B2 may be formed in the same layer and of the same material. The metal pattern M1 may be a laminated pattern in which Cr (chromium), Pt (platinum), and Au (gold) are stacked in that order.

[0016] The first pad portion P1 may have a size in the Y direction that is larger than the first joint portion S1. The solder H1 may have a size in the Y direction that is larger than the first solder regulating portion KF. The bridging portion B1 may have a size in the Y direction that is smaller than the first joint portion S1 and the first pad portion P1. The second substrate 20 may include a second pad portion P2 that is electrically insulated from the first pad portion P1.

[0017] The second substrate 20 may be heated to melt the solder H1, and then the temperature of the second substrate 20 may be lowered to solidify the solder H1. The connection part CB between the base substrate BS and the light-emitting element 2 may break due to an external force applied after the solder H1 has solidified, or it may break spontaneously during the solidification process.

[0018] As shown in Figure 3, after the transfer of the first target object 2A, the second target object 2B selected from the multiple light-emitting elements 2 remaining on the first substrate 10 may be transferred to the third substrate 30. By repeating this process, all of the light-emitting elements 2 can be transferred to multiple second substrates.

[0019] Figure 5 is a plan view showing an alternative configuration of the second substrate. As shown in Figure 5, the first solder regulating portion KF may be raised above the first joint portion S1. The first solder regulating portion KF may contain a dielectric material. The first joint portion S1, the crosslinking portions B1 and B2, the base portion U1 below the first solder regulating portion, and the first pad portion P1 may be composed of a metal pattern M1 formed in the same process, or the first solder regulating portion KF may be composed of a dielectric material with lower wettability than the metal pattern M1, formed on the base portion U1. The dielectric material may be an insulating film such as a silicon nitride film or a silicon oxide film.

[0020] Figure 6 is a plan view showing an alternative configuration of the second substrate. As shown in Figure 6, the first solder regulating portion KF may be recessed compared to the first joint portion S1. The first solder regulating portion KF may be conductive and electrically connected to the first joint portion S1. The first pad portion P1, the first joint portion S1, and the bridged portions B1 and B2 may be composed of a metal pattern M1 (a laminated pattern of a lower layer MA and an upper layer MB) formed in the same process, and the first solder regulating portion KF may be an opening in the upper layer MB (exposed lower layer MA). The lower layer MA may contain Pt, and the upper layer MB may contain Au. The solder H1 may contain Au (gold), the surface of the first joint portion S1 (upper layer MB) may be composed of Au (gold), and the first solder regulating portion KF (exposed lower layer MA) may be composed of Pt (platinum). Pt has lower wettability to solder H1 than Au.

[0021] Figure 7 is a plan view showing an alternative configuration of the second substrate. As shown in Figure 7, in the second substrate 20, one bridging portion B1 is located between the first joint portion S1 and the first pad portion P1 which are aligned in the X direction, and first solder restricting portions KF may be formed on each of the Y-direction sides of the bridging portion B1. That is, two first solder restricting portions KF aligned in the Y direction are formed between the first joint portion S1 and the first pad portion P1 which are aligned in the X direction, and a bridging portion B1 (which electrically connects the first joint portion S1 and the first pad portion P1) may be provided between the two first solder restricting portions KF. The first solder restricting portions KF may be semiconductors, conductors, or dielectrics, provided that their wettability is lower than that of the first joint portion S1.

[0022] Figure 8 is a cross-sectional view showing another method for manufacturing a light-emitting device. Figure 9 is a plan view showing the second substrate of Figure 8. As shown in Figures 8 and 9, the light-emitting body 2 has a second electrode D2, and the second substrate 20 may have a conductive first junction S1, a first pad portion P1 electrically connected to the first junction S1, one or more first solder restricting portions KF located between the first junction S1 and the first pad portion P1, a conductive second junction S2, a second pad portion P2 electrically connected to the second junction S2, and one or more second solder restricting portions KS located between the second junction S2 and the second pad portion P2. Solder H1 may be formed on the first junction S1 and solder H2 may be formed on the second junction S2.

[0023] The molten solder H1 on the first joint S1 may be brought into contact with the first electrode D1 of the first object 2A, and the molten solder H2 on the second joint S2 may be brought into contact with the second electrode D2 of the first object 2A, after which the first and second substrates 10 and 20 may be separated to transfer the first object 2A to the second substrate 20. The first joint S1 and the first pad portion P1 may be electrically connected via the bridging portion B1, and the second joint S2 and the second pad portion P2 may be electrically connected via the bridging portion B2. The first electrode D1 may be the anode and the second electrode D2 may be the cathode.

[0024] Figure 10 is a plan view showing an alternative configuration of the second substrate. As shown in Figure 10, the first joint S1 and the first pad P1 may be electrically connected via a bent shaped bridging portion B1, and the second joint S2 and the second pad P2 may be electrically connected via a bent shaped bridging portion B2. The bridging portion B1 may have a shape that repeats bending multiple times and has multiple extension portions YF extending in the Y direction, and a first solder regulating portion KF may be formed between the first joint S1 and the extension portion YF and between adjacent extension portions YF. The bridging portion B2 may have a shape that repeats bending multiple times and has multiple extension portions YS extending in the Y direction, and a second solder regulating portion KS may be formed between the second joint S2 and the extension portion YS and between adjacent extension portions YS.

[0025] Figure 11 is a cross-sectional view showing the bonding state between the second substrate and the light-emitting element. In Figure 11, the first electrode D1 of the light-emitting element 2 is bonded to the first pad P1 on the base substrate JS via solder H1. The light-emitting element 2 may comprise, in this order, a base semiconductor portion 8 containing a nitride semiconductor (e.g., a GaN-based semiconductor), an n-type semiconductor portion 9n, an active portion 9a, a p-type semiconductor portion 9p, and the first electrode D1 (anode). The base semiconductor portion 8 may be n-type. The light-emitting element 2 may be an LED (light-emitting diode). After the transfer of the light-emitting element 2, a cathode (not shown) may be formed on the back surface of the base semiconductor portion 8, and this cathode may be electrically connected to the second pad P2.

[0026] Figure 12 is a cross-sectional view showing the bonding state between the second substrate and the light-emitting element. In Figure 12, the first electrode D1 (anode) of the light-emitting element 2 is bonded to the first pad P1 on the base substrate JS via solder H1, and the second electrode D2 (cathode) of the light-emitting element 2 is bonded to the second pad P2 on the base substrate JS via solder H2. The light-emitting element 2 comprises, in this order, a base semiconductor portion 8 containing a nitride semiconductor (e.g., a GaN-based semiconductor), an n-type semiconductor portion 9n, an active portion 9a, a p-type semiconductor portion 9p including a ridge RJ, and the first electrode D1, and the second electrode D2 may be formed on the base semiconductor portion 8. An insulating film ZF may be provided around the ridge RJ. The base semiconductor portion 8 may be n-type. The light-emitting element 2 may be an end-face emission type semiconductor laser body (chip).

[0027] In Figure 12, the first object 2A may be transferred to the second substrate 20 such that the Y direction, which is perpendicular to the X direction in which the light-emitting bodies 2 are aligned, coincides with the resonator length direction of the first object 2A (light-emitting body 2).

[0028] (manufacturing equipment) Figure 13 is a block diagram showing the configuration of a manufacturing apparatus for a light-emitting device according to this embodiment. The manufacturing apparatus 50 for a light-emitting device includes an apparatus N1 for preparing a first substrate 10 having a plurality of light-emitting bodies 2, an apparatus N2 for preparing a second substrate 20 having a conductive first joint S1, a first pad portion P1 electrically connected to the first joint S1, and a first solder regulating portion KF located between the first joint S1 and the first pad portion P1, with solder H1 formed on the first joint S1, an apparatus N3 for joining a first target body 2A selected from the plurality of light-emitting bodies 2 to the second substrate 20, and then separating the first and second substrates 10 and 20 to transfer the first target body 2A to the second substrate 20, and an apparatus N4 for controlling apparatuses N1 to N3.

[0029] (Laser element substrate) Figure 14 is a perspective view showing the configuration of a laser element substrate. When each of the multiple light-emitting elements 2 on the first substrate 20 is a semiconductor laser body (chip), the light-emitting element substrate 25 on which the multiple light-emitting elements 2 have been transferred can be referred to as a laser element substrate 25 (light-emitting device). In Figure 14, a recess HL is formed in the base substrate JS, and the light-emitting elements 2 (first target elements) may be transferred to the second substrate 20 such that the light-emitting end of each light-emitting element 2 (first target element) is located on the recess HL.

[0030] Figure 15 is a perspective view showing an alternative configuration of the laser element substrate. By dividing the two-dimensional arrangement type laser element substrate 25 of Figure 14, a one-dimensional arrangement type laser element substrate 25 as shown in Figure 15 may be obtained. As shown in Figure 15, in the one-dimensional arrangement type laser element substrate 25, a process of forming a reflective boundary film RF on the resonator end face of each semiconductor laser body 2 (so-called end face coating) may be performed.

[0031] The laser element substrate 25 in Figure 15 comprises a base substrate JS and a plurality of semiconductor laser bodies 2. On the base substrate JS are a conductive first junction S1, a first pad portion P1 electrically connected to the first junction S1, and a first solder regulating portion KF located between the first junction S1 and the first pad portion P1. The first junction S1 and the first pad P1 are aligned in the X direction (first direction), and each semiconductor laser body 2 (semiconductor laser chip 2) is soldered to the first junction S1 such that its resonator length direction is perpendicular to the X direction. The base substrate JS has a recess (hollow portion) HL located below the light emission end of each semiconductor laser body 2.

[0032] Figure 16 is a perspective view showing the configuration of the laser element. By separating the one-dimensional arrangement laser element substrate 25 of Figure 15 into individual pieces, a laser element 27 (light-emitting device) can be formed, as shown in Figure 16, in which a semiconductor laser body 2 is mounted on a support ST.

[0033] Figure 17 is a perspective view showing the configuration of a laser module. The laser module 29 (light-emitting device) in Figure 17 is a surface-mount type package and comprises a housing 35 and a laser element substrate 25. The laser element substrate 25 contains a plurality of light-emitting elements 2 (semiconductor laser chips), and the side surface of the support ST (the surface parallel to the resonant end face) is positioned opposite the bottom surface 31 of the housing 35. Therefore, the emission surface (resonant end face on the emission side) of each light-emitting element 2 faces the top surface 34 (transparent plate) of the housing 35, and laser light is emitted from the top surface 34 of the housing 35. The light-emitting elements 2 are connected to external connection pins 33 via wires 31.

[0034] Conventional technology required die-bonding laser chips individually to submounts to create a CoS (Chip on Submount). However, in Figure 17, the support ST functions as a submount, and the light-emitting element 2 (semiconductor laser chip) itself has a CoS structure, eliminating the need for die-bonding to the submount. This resolves the handling difficulties associated with short resonance lengths (resonator lengths) or narrow chip widths. Specifically, the light-emitting element 2 has first and second pad portions P1 and P2 on the support ST that are sized for wire bonding. Since the first and second pad portions P1 and P2 are electrically connected to the first and second electrodes D1 and D2 of the light-emitting element 2 (semiconductor laser chip), it is sufficient to electrically connect the package's external connection pins 33 to the first and second pad portions P1 and P2 with wires 31.

[0035] (Method for manufacturing the first substrate) Figure 18 is a cross-sectional view showing a method for manufacturing the first substrate. In Figure 18, a base portion 4 containing a nitride semiconductor is formed on the main substrate 1, and a mask pattern 6 including a plurality of stripe-shaped mask portions 5 is provided on the base portion 4. The mask portion 5 is made of, for example, a silicon nitride film with a thickness of 100 nm and a width of 52 μm, with the X direction being the longitudinal direction. The pitch of the stripes of the mask portion 5 is, for example, 55 μm.

[0036] A resist stripe pattern is formed on a base substrate BS, on which a nitride semiconductor film is deposited as the underlayment 4, using photolithography technology. Next, a silicon nitride film with a thickness of, for example, 100 nm is deposited over the entire surface by sputtering. Then, the silicon nitride film is patterned using the lift-off method to form a mask pattern 6 (stripe pattern). Subsequently, the base semiconductor portion 8 is grown on the mask pattern 6 by metal-organic vapor deposition (MOCVD) using, for example, trimethylgallium (TMG) and ammonia (NH3) (ELO method).

[0037] The base semiconductor section 8 includes a nitride semiconductor as its main material. Nitride semiconductors can be expressed as, for example, AlxGayInzN (0≦x≦1;0≦y≦1;0≦z≦1;x+y+z=1), and specific examples include GaN-based semiconductors, AlN (aluminum nitride), InAlN (indium aluminum nitride), and InN (indium nitride). GaN-based semiconductors are semiconductors containing gallium atoms (Ga) and nitrogen atoms (N), and typical examples include GaN, AlGaN, AlGaInN, and InGaN. The base substrate BS and the mask 6 together are sometimes referred to as the template substrate TS.

[0038] In Figure 18, an initial growth region is formed above the substrate 4 (including, for example, the seed region) exposed at the opening KB of the mask 6. The initial growth region serves as the starting point for lateral growth of the base semiconductor region 8. The initial growth region can be formed to a thickness of, for example, 30 nm to 1000 nm, 50 nm to 400 nm, or 70 nm to 350 nm. By allowing lateral growth from a state where the initial growth region slightly protrudes from the mask region 5, growth of the base semiconductor region 8 in the c-axis direction (thickness direction) is suppressed, and the base semiconductor region 8 can be grown laterally at high speed and with high crystallinity. This makes it possible to form a thin, wide, low-defect base semiconductor region 8 (crystalline nitride semiconductor such as GaN) at low cost.

[0039] The base semiconductor portions 8, which grow laterally in opposite directions from two adjacent openings KB, do not come into contact (meet) on the mask portion 5, and have a gap GP, thereby reducing the internal stress of the base semiconductor portions 8. This reduces cracks and defects (dislocations) that occur in the base semiconductor portions 8. This effect is particularly effective when the main substrate 1 is a different type of substrate (a substrate with a different lattice constant from the base semiconductor portions 8). The width of the gap GP can be, for example, 10 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. Of the base semiconductor portion 8, the portion located on the initial growth portion becomes a dislocation inheritance portion with many through dislocations, while the portion on the mask portion 5 (wing portion) becomes a low-defect portion LK with a through dislocation density of 1 / 10 or less compared to the dislocation inheritance portion. A through dislocation is a dislocation that travels through the base semiconductor portion 8 in its c-axis direction ( <0001> These are dislocations (defects) that extend in the direction. The penetration dislocation density of a low-defect area LK is, for example, 5 × 10⁻⁶. 6 [pcs / cm 2 ) The following may be used:

[0040] On the base semiconductor portion 8, for example, a compound semiconductor portion 9 including an active portion and a p-type semiconductor portion, as well as a first electrode D1 and a second electrode D2 can be formed. When forming the active portion (active layer), the light-emitting portion can be positioned above the low-defect portion LK (overlapping the low-defect portion LK in a plan view). The base semiconductor portion 8 and the compound semiconductor portion 9 may be divided on the template substrate TS (for example, by dividing them so that the cross-section is an m-plane) to form multiple light-emitting bodies. The mask 6 may be removed before transferring the light-emitting bodies.

[0041] For low-defect areas LK, the ratio of the size in the a-axis direction to the thickness can be set to, for example, 2.0 or more. Using the method shown in Figure 18, this size ratio can be set to 1.5 or more, 2.0 or more, 4.0 or more, 5.0 or more, 7.0 or more, or 10.0 or more. It has been found that setting this size ratio to 1.5 or more facilitates the division of the base semiconductor portion 8 in subsequent processes (for example, division into a cross-section that is the m-plane). In addition, the internal stress of the base semiconductor portion 8 is reduced, and the warping of the second substrate 20 is reduced.

[0042] The aspect ratio (ratio of size in the X direction to thickness) of the base semiconductor portion 8 can be 3.5 or greater, 5.0 or greater, 6.0 or greater, 8.0 or greater, 10 or greater, 15 or greater, 20 or greater, 30 or greater, or 50 or greater. Using the method shown in Figure 18, the ratio of the size of the base semiconductor portion 8 in the X direction to the width of the aperture KB can be 3.5 or greater, 5.0 or greater, 6.0 or greater, 8.0 or greater, 10 or greater, 15 or greater, 20 or greater, 30 or greater, or 50 or greater, thereby increasing the ratio of low-defect portions LK.

[0043] The base semiconductor portion 8 (including the initial growth portion) shown in Figure 18 can be made of a nitride semiconductor crystal (for example, a GaN crystal, an AlGaN crystal, an InGaN crystal, or an InAlGaN crystal).

[0044] Figure 19 is a cross-sectional view showing an example of the configuration of a base substrate. The base substrate BS may include a main substrate 1 and a base layer 4 on the main substrate 1. The base layer 4 may include a GaN-based semiconductor. The base layer 4 may include at least one of a seed layer and a buffer layer. A GaN-based semiconductor can be used as the seed layer. A GaN-based semiconductor, AlN, SiC, etc. can be used as the buffer layer. The base substrate BS may be composed of a self-supporting single-crystal substrate such as GaN or SiC (for example, a wafer cut from a bulk crystal), and a mask 6 may be placed on the single-crystal substrate.

[0045] Figure 20 is a cross-sectional view showing an example of the configuration of the first substrate. As shown in Figure 20, the first substrate 10 includes a template substrate TS having a seed region SA and a growth suppression region YA, and the first target body 2A is crystallinely bonded to the seed region SA and may overlap with the growth suppression region YA in a plan view (when viewed from a line of sight parallel to the Z direction). The seed region SA may be composed of a nitride semiconductor such as AlN. The growth suppression region YA may be composed of a material that suppresses the longitudinal growth (e.g., growth in the c-axis direction) of the base semiconductor portion 8 (nitride semiconductor portion), and examples include amorphous materials such as silicon nitride and silicon oxide, semiconductor materials such as SiC, as well as polycrystalline materials or metallic materials. With the alignment direction X (first direction) of the multiple light-emitting bodies 2 as the width direction, the bonding width WK between the first target body 2A and the seed region SA may be 1 / 5 or less, 1 / 7 or less, or 1 / 10 or less of the width WA of the first target body 2A.

[0046] (Additional items) The foregoing disclosures are for illustrative and explanatory purposes only, and not for limitation. Many variations will be obvious to those skilled in the art based on these examples and descriptions, and therefore, these variations are also included in the embodiments. [Explanation of Symbols]

[0047] 1 Main board 5 Mask section 6 Mask Patterns 10. First board 20 Second board 25. Light-emitting element substrate (laser element substrate) 27 Laser elements 29 Laser Modules 50 Manufacturing equipment for light-emitting devices BS base board JS base board TS template substrate KB opening LK Low defect area

Claims

1. A first step of preparing a first substrate having a plurality of light-emitting elements, including a first light-emitting element and a second light-emitting element adjacent to the first light-emitting element, A second step of preparing a second substrate having a conductive first joint, a first pad portion electrically connected to the first joint, and a first solder regulating portion located between the first joint and the first pad portion, wherein solder is formed on the first joint; A third step involves joining the first light-emitting element and the second substrate with solder, The process includes a fourth step of separating the first and second substrates and transferring the first light-emitting element to the second substrate, A method for manufacturing a light-emitting device, wherein in the third step, the second light-emitting body faces the first solder regulating portion or the first pad portion.

2. A method for manufacturing a light-emitting device according to claim 1, wherein, in a plan view with the first light-emitting body and the second substrate joined together, the second light-emitting body overlaps with the first pad portion.

3. The first joint and the first pad are aligned in the first direction, The method for manufacturing a light-emitting device according to claim 1, wherein the spacing between adjacent light-emitting elements is smaller than the size of the first pad portion in the first direction and the size of the first joint portion in the first direction.

4. Each light-emitting element has a first electrode, A method for manufacturing a light-emitting device according to claim 1, wherein at least one of the first and second substrates is heated while the first and second substrates are brought close together, and the molten solder is brought into contact with the first electrode of the first light-emitting body but not with the first electrode of the second light-emitting body.

5. The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the first solder-regulating portion has lower solder wettability than the first joint portion.

6. A method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the first solder-restricting portion is non-conductive.

7. A method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the first solder regulating portion is conductive and electrically connected to the first junction portion.

8. The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the first solder-restricting portion is recessed compared to the first joint portion.

9. The second substrate includes a base substrate, The method for manufacturing a light-emitting device according to claim 8, wherein the base substrate is exposed in the first solder-restricting portion.

10. The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the first solder-regulating portion is raised higher than the first joint portion.

11. The first joint and the first pad are aligned in the first direction, The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the size of the first pad portion in a second direction perpendicular to the first direction is larger than that of the first joint portion.

12. The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the second substrate includes one or more crosslinking portions that electrically connect the first bonding portion and the first pad portion.

13. The first joint and the first pad are aligned in the first direction, The method for manufacturing a light-emitting device according to claim 12, wherein the size of the bridging portion in a second direction perpendicular to the first direction is smaller than that of the first joint portion and the first pad portion.

14. The method for manufacturing a light-emitting device according to claim 12, wherein the crosslinked portion has a bent shape.

15. A method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the first joint and the solder contain Au.

16. A method for manufacturing a light-emitting device according to claim 6, wherein the first solder-restricting portion includes a dielectric material.

17. The method for manufacturing a light-emitting device according to claim 7, wherein Pt is included in the first solder-regulating portion.

18. The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the plurality of light-emitting bodies are a plurality of semiconductor laser bodies arranged in a first direction.

19. A method for manufacturing a light-emitting device according to claim 18, wherein the first light-emitting body is transferred to the second substrate such that the second direction perpendicular to the first direction coincides with the resonator length direction of the first light-emitting body.

20. The second substrate includes a base substrate, A recess is formed in the aforementioned substrate. A method for manufacturing a light-emitting device according to claim 19, wherein the first light-emitting body is transferred to the second substrate such that the light-emitting end of the first light-emitting body is located on the recess.

21. The first substrate includes a base substrate, The second substrate includes a base substrate, A method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the base substrate and the underlayment each contain a silicon substrate, or the base substrate and the underlayment each contain a silicon carbide substrate.

22. The first joint and the first pad are aligned in the first direction, A method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the second substrate is arranged in a second direction perpendicular to the first direction and includes two bridging portions that electrically connect the first joint portion and the first pad portion, and the first solder regulating portion is located between the two bridging portions.

23. The method for manufacturing a light-emitting device according to claim 12, wherein in the second substrate, one bridging portion is located between the first bonding portion and the first pad portion which are aligned in the first direction, and the direction perpendicular to the first direction is defined as the second direction, and the first solder restricting portion is formed on each side of the second direction.

24. Each light-emitting element has a second electrode, The second substrate has a conductive second junction, a second pad portion electrically connected to the second junction, and a second solder regulating portion located between the second junction and the second pad portion, and solder is formed on the second junction. A method for manufacturing a light-emitting device according to any one of claims 1 to 4, comprising bringing molten solder on the first joint into contact with the first electrode of the first light-emitting body, and bringing molten solder on the second joint into contact with the second electrode of the first light-emitting body.

25. A method for manufacturing a light-emitting device according to claim 4, wherein the second substrate is heated to melt the solder, and then the temperature of the second substrate is lowered to solidify the solder.

26. The first substrate includes a base substrate, The method for manufacturing a light-emitting device according to claim 25, wherein the connection between the base substrate and each light-emitting element breaks due to an external force applied after the solder has solidified, or breaks spontaneously when the solder solidifies.

27. A method for manufacturing a light-emitting device according to claim 1, comprising the step of transferring a second light-emitting element selected from a plurality of light-emitting elements remaining on the first substrate to a third substrate, wherein the first and second light-emitting elements are adjacent to each other before the transfer of the first light-emitting element.

28. The method for manufacturing a light-emitting device according to claim 27, wherein the first and second light-emitting bodies are adjacent to each other in the plurality of light-emitting bodies.

29. A method for manufacturing a light-emitting device according to any one of claims 1 to 4, comprising the step of selectively transferring a group of first light-emitting elements, including the first light-emitting element, onto a second substrate to obtain a light-emitting element substrate, and then dividing the resulting substrate into a plurality of parts.

30. The first joint and the first pad are aligned in the first direction, The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the size of the solder in a second direction perpendicular to the first direction is larger than that of the first solder restricting portion.

31. The first substrate includes a template substrate having a seed region and a growth inhibition region. The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the first light-emitting element is crystallinely bonded to the seed region and overlaps with the growth-inhibiting region in a plan view.

32. The direction in which the plurality of light-emitting elements are arranged is defined as the width direction, The method for manufacturing a light-emitting device according to claim 31, wherein the combined width of the first light-emitting element and the seed region is 1 / 5 or less of the width of the first light-emitting element.

33. A manufacturing apparatus for a light-emitting device, which performs the first to fourth steps described in claim 1.

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