Device for improving the anode-cathode ratio of an RF chamber

Abstract

Described herein are embodiments of a process kit for use in a plasma processing chamber. In some embodiments, the process kit for use in the process chamber includes an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, the annular body including an inner surface having a first segment extending downward, a second segment extending radially outward from the first segment, a third segment extending downward from the second segment, a fourth segment extending radially outward from the third segment, a fifth segment extending downward from the fourth segment, a sixth segment extending radially inward from the fifth segment, a seventh segment extending downward from the sixth segment, and an eighth segment extending radially inward from the seventh segment.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to substrate processing equipment.

Background Art

[0002] A plasma process chamber typically includes a substrate support for supporting a substrate and a target disposed opposite the substrate support. The target serves as a source of material to be sputtered onto the substrate during processing. RF power is supplied to the plasma process chamber to generate a plasma within a processing volume disposed between the target and the substrate support. The plasma process chamber typically includes a process kit for protecting the chamber walls from unwanted depositions and for confining the plasma. The process kit generally includes a process shield. For high RF power processes, the surface of the process shield facing the plasma is vulnerable to erosion, resulting in unwanted particle generation of the material constituting the process shield and unwanted re-sputtering of the target material disposed on the process shield. The inventors of the present invention have recognized that reducing the distance between the target and the substrate increases the problems of contamination and re-sputtering.

[0003] Therefore, the inventors of the present invention have provided an improved process kit.

Summary of the Invention

[0004] This specification describes embodiments of process kits for use in a plasma process chamber. In some embodiments, a process kit for use in a process chamber includes an annular body having an upper part and a lower part extending downward and radially inward from the upper part, the annular body including an inner surface having a first segment extending downward, a second segment extending radially outward from the first segment, a third segment extending downward from the second segment, a fourth segment extending radially outward from the third segment, a fifth segment extending downward from the fourth segment, a sixth segment extending radially inward from the fifth segment, a seventh segment extending downward from the sixth segment, and an eighth segment extending radially inward from the seventh segment.

[0005] In some embodiments, a process kit for use in a process chamber includes a process shield having an upper and a lower part, the lower part having a first portion extending vertically downward from the upper part, a second portion extending horizontally radially inward from the first portion, and a first inner lip extending upward from the second portion, and the inner surface of the upper part including an annular groove extending radially outward beyond the lower part to increase the surface area of ​​the process shield facing the process volume, and a coolant ring coupled to the upper part of the process shield, the coolant ring configured to allow coolant to flow within the coolant ring.

[0006] In some embodiments, the process chamber includes a chamber body having an internal volume therein, a substrate support disposed within the internal volume, a target disposed in the internal volume facing the substrate support to at least partially define a process volume between itself and the substrate support, the target including a cathode surface defined by the surface of the target facing the process volume, and a process shield disposed around the substrate support and the target to define the outer boundary of the process volume, the process shield including an anode surface defined by the surface of the process shield facing the process volume, the surface area of ​​the anode surface being greater than twice the surface area of ​​the cathode surface.

[0007] Other embodiments and additional embodiments of this disclosure are described below.

[0008] Having briefly outlined the present disclosure above, the embodiments of this disclosure, which will be discussed in more detail below, can be understood by referring to the exemplary embodiments of this disclosure shown in the accompanying drawings. However, the accompanying drawings only illustrate typical embodiments of this disclosure and should therefore not be considered limiting, as this disclosure may accept other equally valid embodiments. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic side view showing a process chamber having a process kit according to at least some embodiments of the present disclosure. [Figure 2] This is a partial side cross-sectional view showing a process chamber having a process kit according to at least some embodiments of the present disclosure. [Figure 3] This is a partial side cross-sectional view showing a process chamber having a process kit according to at least some embodiments of the present disclosure. [Figure 4] This is an isometric top view showing a process shield according to at least some embodiments of the present disclosure. [Figure 5]This is a partial side cross-sectional view showing a process chamber having a process kit according to at least some embodiments of the present disclosure. [Figure 6] This is a partial cross-sectional view showing a process chamber having the process kit of Figure 5 according to at least some embodiments of the present disclosure. [Modes for carrying out the invention]

[0010] For ease of understanding, the same reference numerals have been used to indicate identical elements common to the figures where possible. The figures are not drawn at a constant scale and may be simplified for clarity. Unless otherwise noted, elements and features of one embodiment may be usefully incorporated into other embodiments.

[0011] This specification describes embodiments of process kits for use in a plasma process chamber. The process kits described herein include a process shield. The inventors of the present invention have recognized that increasing the ratio of the plasma-facing surface area of ​​the process shield to the plasma-facing surface area of ​​a target placed in the plasma process chamber (i.e., increasing the anode / cathode ratio) advantageously reduces contamination and resputtering problems. Novel process shields provide an anode / cathode ratio of about 2 or more, for example, about 2 to about 3. In some embodiments, to increase the anode surface area, the process shield includes one or more annular grooves on its inner surface. To increase the anode surface area, the process shield further extends below the surface of the substrate support that receives the substrate. The process shield may include a cooling ring coupled to the process shield to control the temperature of the process shield. The process kit may further include a covering that rests on the process shield in the processing position, and this covering is configured to define a meandering path between the covering and the process shield to reduce or prevent plasma leakage through the process kit.

[0012] Figure 1 shows a schematic side view of a process chamber 100 (e.g., a plasma processing chamber) having a process kit according to at least some embodiments of the present disclosure. In some embodiments, the process chamber 100 is an etching processing chamber. However, other types of processing chambers configured for different processes may also use embodiments of the process kit described herein, or other types of processing chambers configured for different processes may be modified to be used in conjunction with embodiments of the process kit described herein.

[0013] The process chamber 100 is a vacuum chamber appropriately adapted to maintain a pressure lower than atmospheric pressure within an internal volume 120 during substrate processing. The process chamber 100 includes a chamber body 106 covered by a lid assembly 104 that encloses a processing volume 119 located in the upper half of the internal volume 120. The chamber body 106 and the lid assembly 104 may be made of a metal such as aluminum. The chamber body 106 can be grounded by coupling to ground 115.

[0014] Within the internal volume 120, a substrate support 124 is provided for supporting and holding a substrate 122, such as a semiconductor wafer or another substrate that can be held electrostatically. The substrate support 124 may generally include an electrostatic chuck 150 mounted on a pedestal 136, and a hollow support shaft 112 for supporting the pedestal 136 and the electrostatic chuck 150. The electrostatic chuck 150 comprises a dielectric plate in which one or more electrodes 154 are disposed. The pedestal 136 is generally made of a metal such as aluminum. The pedestal 136 is biasable and can be maintained at an electrical stray potential or grounded during plasma operation. The hollow support shaft 112 provides a conduit for supplying, for example, backside gas, process gas, fluid, coolant, power, etc., to the electrostatic chuck 150.

[0015] In some embodiments, a hollow support shaft 112 is coupled to a lift mechanism 113, such as an actuator or motor, which provides vertical movement of the electrostatic chuck 150 between an upper processing position (shown in Figure 1) and a lower transfer position (not shown). A bellows assembly 110 is positioned around the hollow support shaft 112, coupled between the electrostatic chuck 150 and the bottom surface 126 of the process chamber 100 to provide a flexible seal, which allows vertical movement of the electrostatic chuck 150 and simultaneously prevents a decrease in the vacuum level within the process chamber 100. The bellows assembly 110 further includes a lower bellows flange 164, which contacts an O-ring 165 or other suitable sealing element that contacts the bottom surface 126 to help prevent a decrease in the chamber vacuum level.

[0016] The hollow support shaft 112 provides conduits for coupling the chuck power supply 140 and RF sources (e.g., RF power supply 174 and RF bias power supply 117) to the electrostatic chuck 150. In some embodiments, the RF power supply 174 and RF bias power supply 117 are coupled to the electrostatic chuck 150 via their respective corresponding RF match networks (only RF match network 116 is shown). In some embodiments, the substrate support 124 may optionally include AC bias power or DC bias power.

[0017] The substrate lift 130 may include lift pins 109 mounted on a platform 108, the platform 108 being connected to a shaft 111, the shaft 111 being coupled to a second lift mechanism 132 for raising and lowering the substrate lift 130 to place the substrate 122 onto or remove the substrate 122 from the electrostatic chuck 150. The platform 108 may take the form of a hoop lift. The electrostatic chuck 150 may include through holes for receiving the lift pins 109. A bellows assembly 131 is coupled between the substrate lift 130 and the bottom surface 126 to provide a flexible seal that maintains the chamber vacuum while the substrate lift 130 is moving vertically.

[0018] Within the processing volume 119, a target 138, which functions as a cathode during processing, is positioned facing the substrate support 124 to define, at least partially, the process amount between the target 138 and the substrate support 124. 138 This includes a cathode surface defined by the surface facing the processing volume of the target 138. The substrate support 124 has a support surface having a plane substantially parallel to the sputtering surface of the target 138. The target 138 is connected to either or both of the DC power supply 190 and / or the RF power supply 174. The DC power supply 190 can apply a bias voltage to the target 138 relative to the process shield 105.

[0019] The target 138 comprises a sputtering plate 142 mounted on a backing plate 144. The sputtering plate 142 contains the material to be sputtered onto the substrate 122. The backing plate 144 is made from a metal such as stainless steel, aluminum, copper-chromium, or copper-zinc. The backing plate 144 can be made from a material having a thermal conductivity large enough to dissipate the heat generated within the target 138, such heat being generated by eddy currents in the sputtering plate 142 and the backing plate 144, as well as by the impact of high-energy ions from the generated plasma onto the sputtering plate 142.

[0020] In some embodiments, the process chamber 100 includes a magnetic field generator 156 for shaping the magnetic field around the target 138 to improve sputtering of the target 138. Capacitively generated plasma can be enhanced by the magnetic field generator 156, which, for example, has multiple magnets 151 (e.g., permanent magnets or electromagnetic coils) that provide a magnetic field within the process chamber 100 having a rotating magnetic field with a rotation axis perpendicular to the plane of the substrate 122. In addition to or instead of this, the process chamber 100 may include a magnetic field generator 156 that generates a magnetic field near the target 138 to increase the ion density in the processing volume 119 and improve sputtering of the target material. Multiple magnets 151 can be arranged in a cavity 153 of the lid assembly 104. To cool the target 138, a coolant such as water can be placed in the cavity 153, or a coolant such as water can be circulated through the cavity 153.

[0021] To prevent unwanted reactions between various chamber components and the ionized process materials, process chamber 100 includes a process kit positioned at the boundaries of such chamber components. To at least partially define a processing volume 119, process kit 102 includes a process shield 105 that surrounds substrate support 124 and target 138. For example, process shield 105 can define an outer boundary of processing volume 119. Process shield 105 includes an anode surface defined by a surface of process shield 105 facing the processing volume. In some embodiments, process shield 105 is made of a metal such as aluminum.

[0022] In some embodiments, process kit 102 includes a deposition ring 170 placed on the outer edge of electrostatic chuck 150. In some embodiments, process kit 102 includes a cover ring 180 that is disposed on process shield 105 to form a serpentine gas flow path between cover ring 180 and process shield 105. In some embodiments, at the processing location, an inner radial portion of cover ring 180 rests on deposition ring 170 to reduce or prevent plasma leakage through the space between cover ring 180 and deposition ring 170.

[0023] In some embodiments, the distance between the target 138 and the substrate support 124 when the substrate support 124 is in the processing position is from about 60.0 mm to about 160.0 mm. In some embodiments, the distance 158 between the target 138 and the substrate 122 when the substrate support 124 is in the processing position is from about 90.0 mm to about 110.0 mm. The inventors of the present invention have recognized that reducing the distance between the target 138 and the substrate 122 increases the problems of contamination and re-sputtering because the anode surface area is reduced. Increasing the anode surface area without increasing the distance between the target 138 and the substrate 122 advantageously provides the benefits of a short distance between the target 138 and the substrate 122, while at the same time reducing the problems of contamination and re-sputtering. In some embodiments, to reduce the problems of contamination and re-sputtering, the surface area of the anode surface is advantageously larger than about twice the surface area of the cathode surface.

[0024] In some embodiments, a plurality of ground loops 172 are disposed between the process shield 105 and the pedestal 136. The ground loop 172 is generally a loop of conductive material configured to ground the process shield 105 to the pedestal 136 when the substrate support 124 is in the processing position, or alternatively, may include a conductive strap, a spring member, and the like. In some embodiments, a plurality of ground loops 172 are coupled to the outer lip of the pedestal 136 such that the ground loop 172 contacts the process shield 105 at the processing position to ground the process shield 105. In some embodiments, at the transfer position, the ground loop 172 is spaced apart from the process shield 105.

[0025] The process chamber 100 is coupled to and fluid-coupled with a vacuum system 19, the vacuum system 19 including a throttle valve (not shown) and a vacuum pump (not shown) used to evacuate the process chamber 100. The pressure inside the process chamber 100 can be adjusted by adjusting the throttle valve and / or the vacuum pump. The process chamber 100 is further coupled to and fluid-coupled with a process gas supply 118, the process gas supply 118 can supply one or more process gases to the process chamber 100 to process the substrates 122 placed inside the process chamber 100. To facilitate the transfer of substrates 122 into and out of the chamber body 106, a slit valve 148 is coupled to the chamber body 106, and the slit valve 148 can be aligned with an opening in the side wall of the chamber body 106.

[0026] During use, the DC power supply 190 powers the target 138 and other chamber components connected to the DC power supply 190, while the RF power supply 174 powers the sputtering gas (e.g., from the process gas supply 118) to form a sputtering gas plasma. The formed plasma strikes the sputtering surface of the target 138, impacting the sputtering surface of the target 138 and sputtering the material from the target 138 onto the substrate 122. In some embodiments, the frequency of the RF energy supplied by the RF power supply 174 can be in the range of about 2 MHz to about 60 MHz, or non-limiting frequencies such as 2 MHz, 13.56 MHz, 27.12 MHz, or 60 MHz can be used. In some embodiments, multiple (i.e., two or more) RF power supplies can be provided to supply RF energy at the above multiple frequencies. An additional RF power supply (e.g., RF bias power supply 117) may also be used to supply a bias voltage to the substrate support 124 to attract ions from the plasma toward the substrate 122.

[0027] Figure 2 shows a partial side cross-sectional view of a process chamber having a process kit according to at least some embodiments of the present disclosure. In some embodiments, the process shield 105 includes an annular body 204 having an upper part 206 and a lower part 208 extending downward and radially inward from the upper part 206. In some embodiments, the lower part 208 has a first part 214 extending vertically downward from the upper part 206 and a second part 216 extending horizontally radially inward from the first part 214. The inner surface 212 of the annular body 204, or the anode surface corresponding to the surface of the annular body 204 facing the processing volume, includes an annular groove 215 in the upper part 206. In some embodiments, the annular groove 215 extends radially outward beyond the lower part 208 to increase the surface area of ​​the inner surface 212. In some embodiments, the annular groove 215 has a width W of about 0.9 inches to about 3.0 inches. In some embodiments, the annular groove 215 has a width W of about 0.8 inches to about 2.0 inches. In some embodiments, the width W is about 0.9 inches to about 1.1 inches. In some embodiments, the annular groove 215 has a depth D of about 0.8 inches to about 2.0 inches. In some embodiments, the depth D is about 1.0 inch to about 1.5 inches.

[0028] In some embodiments, the inner surface 212 includes a first segment 220 extending downward from the uppermost surface 218 of the annular body 204. In some embodiments, the inner surface 212 includes a second segment 222 extending radially outward from the first segment 220. In some embodiments, the inner surface 212 includes a third segment 224 extending downward from the second segment 222. In some embodiments, the inner surface 212 includes a fourth segment 226 extending radially outward from the third segment 224. In some embodiments, the inner surface 212 includes a fifth segment 228 extending downward from the fourth segment 226. In some embodiments, the inner surface 212 includes a sixth segment 230 extending radially inward from the fifth segment 228. In some embodiments, the inner surface 212 includes a seventh segment 232 extending downward from the sixth segment 230. In some embodiments, the inner surface 212 includes an eighth segment 234 extending radially inward from a seventh segment 232. In some embodiments, the process shield 105 includes a first inner lip 240 extending upward from the eighth segment 234 or a second portion 216 of the lower 208. In some embodiments, the inner surface 212 includes a ninth segment 236 extending from the first segment 220 to the top surface 218. In some embodiments, the ninth segment 236 extends radially outward and upward.

[0029] A gap 252 is provided between the target 138 and the process shield 105 to isolate the anode from the cathode. For example, the gap 252 extends between the ninth segment 236 and the target 138 and between the target 138 and the uppermost surface 218 of the process shield 105. In some embodiments, a separation ring 260 is provided between the target 138 and the process shield 105 to electrically isolate the target 138 from the process shield 105. In some embodiments, a first O-ring 262 is provided between the upper surface of the process shield 105 and the lower surface of the separation ring 260. In some embodiments, a second O-ring 264 is provided between the upper surface of the separation ring 260 and the lower surface of the target 138.

[0030] In some embodiments, a plurality of ceramic plugs 242 are bonded to the upper part 206 of an annular body 204, and the plurality of ceramic plugs 242 are configured to facilitate centering the target 238 on the annular body 204 to ensure that the gaps 252 are substantially uniform. In some embodiments, the plurality of ceramic plugs 242 include three ceramic plugs arranged at equal intervals. In some embodiments, the plurality of ceramic plugs 242 extend beyond the uppermost surface 218 of the process shield 105. In some embodiments, to accommodate the plurality of ceramic plugs 242, the separation ring 260 includes a plurality of recesses 266 corresponding to the positions of the plurality of ceramic plugs 242. In some embodiments, to accommodate the plurality of ceramic plugs 242, the target 138 includes a plurality of recesses 276 corresponding to the positions of the plurality of ceramic plugs 242.

[0031] In some embodiments, the covering 180 has an annular body. In some embodiments, a first leg 282 of the covering 180 extends downward from the radially outer edge of the annular body. In some embodiments, the first leg 282 is positioned radially outward of the first inner lip 240 of the process shield to define a meandering gas flow path between the first leg 282 and the first inner lip 240 of the process shield. In some embodiments, the covering 180 includes an outer portion 284 having a substantially flat top surface, and an inner portion 286 having a top surface extending radially inward and downward. In some embodiments, the lower surface of the inner portion 286 is configured to rest on the deposit ring 170. In some embodiments, the lower surface of the inner portion 286 includes a recessed portion 606 (see Figure 6) that does not rest on the deposit ring 170.

[0032] In some embodiments, the deposition ring 170 rests on a peripheral notch of the electrostatic chuck 150. In some embodiments, the deposition ring 170 includes an inner portion 274 that is higher than the outer portion 272 of the deposition ring 170. In some embodiments, the inner portion 286 of the covering ring 180 is configured to rest on the outer portion 272 of the deposition ring 170. In some embodiments, the upper surface of the outer portion 272 of the deposition ring 170 has a raised portion 608 (see Figure 6) that extends into a recessed portion 606 of the covering ring 180 in order to form a meandering path for plasma that may leak through between the covering ring 180 and the deposition ring 170.

[0033] Figure 3 shows a partial side cross-sectional view of a process chamber having a process kit according to at least some embodiments of the present disclosure. In some embodiments, a coolant ring 302 is coupled to the upper part 206 of the annular body 204 for cooling the annular body 204. In some embodiments, the coolant ring 302 includes coolant tubes 320 disposed within or embedded in the coolant ring 302, the coolant tubes 320 being configured to circulate coolant through the coolant tubes 320. In some embodiments, the coolant ring 302 is disposed within an annular channel 306 extending from the lower surface 304 of the upper part 206. In some embodiments, the upper part 206 includes holes 316 extending from the top surface 318 for mounting the annular body 204 to the coolant ring 302 (e.g., by fasteners 336). In some embodiments, the holes 316 include eight or more holes, e.g., 16 holes.

[0034] In some embodiments, the upper part 206 includes a hole 326 extending from the top surface 318 for mounting the annular body 204 to the chamber body 106 (e.g., by fasteners 338). In some embodiments, the hole 326 includes four or more holes, for example, eight holes. In some embodiments, the upper part 206 has a wall 312 positioned between the holes 316 and 326. In some embodiments, one or more positioning features can be positioned between the chamber body 106 and the upper part 206 to align the process shield 105 with the chamber body 106. For example, one or more positioning pins can be coupled to the upper part 206, and these one or more positioning pins can extend beyond the bottom surface 304 of the upper part 206 into the corresponding opening of the chamber body to align the process shield 105 with the chamber body 106.

[0035] In some embodiments, a conductive spring member 310, such as an RF gasket, can be placed between the upper 206 and the outer housing 308 of the lid assembly 104 to ground the outer housing 308. In some embodiments, a third O-ring 340 is placed between the lower 208 and the chamber body 106 to seal the space between the lower 208 and the chamber body 106. In some embodiments, a fourth O-ring 350 is placed between the lower 208 and the chamber body 106 to seal the space between the lower 208 and the chamber body 106.

[0036] Figure 4 shows an isometric top view of a process shield according to at least some embodiments of the present disclosure. The coolant tube 320 includes an inlet 410 and an outlet 420 for circulating coolant through the coolant tube 320. In some embodiments, the top surface 318 of the annular body 204 includes a first annular groove 402 for housing a second O-ring 264. In some embodiments, the top surface 318 of the annular body 204 includes a second annular groove 406 for housing a conductive spring member 310. In some embodiments, a hole 316 extends from the second annular groove 406 to an annular channel 306. In some embodiments, a hole 326 extends at least partially from the second annular groove 406 to the bottom surface 304 of the upper part 206 of the process shield 105.

[0037] In some embodiments, the top surface 318 of the annular body 204 includes an annular trap groove 404 configured to collect coolant leaking from the cavity 153 of the lid assembly 104 onto the annular body 204. In some embodiments, the annular trap groove 404 is positioned radially between a first annular groove 402 and a second annular groove 406. In some embodiments, a plurality of ceramic plugs 242 are partially positioned within the annular trap groove 404. In some embodiments, the annular trap groove 404 has a width of approximately 0.35 inches to approximately 0.50 inches. In some embodiments, there is a gap of approximately 0.05 inches to approximately 0.10 inches between the outer sidewall of the annular trap groove 404 and each of the plurality of ceramic plugs 242. In some embodiments, the annular trap groove 404 includes a plurality of trap groove arc segments having terminations near the plurality of ceramic plugs 242. In such embodiments, the plurality of ceramic plugs 242 are not positioned within the annular trap groove 404. In some embodiments, the top surface 318 includes a plurality of lifting holes 430 to facilitate the installation and removal of the process shield 105.

[0038] Figure 5 shows a partial side section view of a process chamber having a process kit according to at least some embodiments of the present disclosure. In some embodiments, the lower part 208 of the process shield 105 includes a second inner lip 504 extending upward from an eighth segment 234 and radially inward from a first inner lip 240. In some embodiments, the second inner lip 504 extends substantially parallel to the first inner lip 240. In some embodiments, the covering 180 includes a second leg 506 extending downward from the annular body of the covering 180 at a position between the first leg 282 and the radially inward surface 508 of the annular body. When the covering 180 is positioned on the process shield 105, the second leg 506 extends between the first inner lip 240 and the second inner lip 504. In some embodiments, the covering 180 includes a third leg 510 positioned radially inward from a second leg 506, extending downward from the annular body of the covering 180. The second inner lip 504 and the second leg 506 advantageously provide enhanced plasma confinement.

[0039] Figure 6 shows a partial cross-sectional view of a process chamber having the process kit of Figure 5, according to at least some embodiments of the present disclosure. In some embodiments, one or more centering bushings 602 are positioned between the first leg 282 of the covering 180 and the second inner lip 504 of the process shield 105, and the one or more centering bushings 602 are configured to center the covering 180 in the process shield 105 when in the processing position. In some embodiments, the first inner lip 240 includes one or more cutouts 610 for accommodating one or more centering bushings 602. In some embodiments, the second leg 506 of the covering 180 includes one or more cutouts 612 for accommodating one or more centering bushings 602. In some embodiments, one or more centering bushings 602 are coupled to the process shield 105 by corresponding one or more fasteners 604. In some embodiments, one or more centering bushings 602 are three centering bushings.

[0040] While the above description applies to embodiments of the present disclosure, other embodiments and additional embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. A process kit for use in a plasma process chamber, A process shield having an annular body including an upper part and a lower part extending downward and radially inward from the upper part, wherein the annular body includes an inner surface, the inner surface having a first segment extending downward, a second segment extending radially outward from the first segment, a third segment extending downward from the second segment, a fourth segment extending radially outward from the third segment, a fifth segment extending downward from the fourth segment, a sixth segment extending radially inward from the fifth segment, a seventh segment extending downward from the sixth segment, and an eighth segment extending radially inward from the seventh segment. A process kit equipped with the following features.

2. The process kit according to claim 1, further comprising a first inner lip extending upward from the eighth segment.

3. The process kit according to claim 2, further comprising a second inner lip extending upward from the eighth segment and radially inward from the first inner lip.

4. The process kit according to claim 1, wherein the inner surface includes a ninth segment extending radially outward and upward from the first segment.

5. The process kit according to claim 1, further comprising a coolant ring coupled to the upper part of the annular body.

6. The process kit according to any one of claims 1 to 5, further comprising a plurality of ceramic plugs bonded to the upper surface of the annular body, wherein the plurality of ceramic plugs are configured to facilitate positioning the annular body in the center of the target of the process chamber.

7. The process kit according to any one of claims 1 to 5, wherein the upper part includes a hole for attaching the annular body to the chamber wall of the process chamber.

8. The process kit according to any one of claims 1 to 5, wherein the top surface of the annular body includes a first annular groove and a second annular groove.

9. The process kit according to any one of claims 1 to 5, wherein the top of the annular body includes an annular trap groove configured to collect coolant leaking onto the annular body.

10. The process kit according to any one of claims 1 to 5, wherein the inner surface of the annular body corresponding to the upper part includes an annular groove that extends radially outward beyond the lower part in order to increase the surface area of ​​the inner surface.

11. The process kit according to claim 10, wherein the width of the annular groove is approximately 0.8 inches to approximately 2.0 inches and the depth is approximately 0.8 inches to approximately 2.0 inches.

12. The process kit according to claim 2 or 3, further comprising a covering having an annular body, wherein a first leg of the covering extends downward from the radially outer edge of the annular body, and the first leg is positioned radially outward from the first inner lip of the process shield to define a meandering gas flow path between the first leg and the first inner lip of the process shield.

13. The process kit according to claim 12, wherein the process shield includes a second inner lip substantially parallel to the first inner lip and located radially inward of the first inner lip, and the covering includes a second leg extending downward from the annular body at a position between the first leg and the radially inward surface of the annular body, and when the covering is positioned on the process shield, the second leg extends between the first inner lip and the second inner lip.

14. The process kit according to claim 13, further comprising one or more centering bushings positioned between the first leg of the covering and the second inner lip of the process shield for centering the covering on the process shield when the covering is positioned on the process shield.

15. A chamber body having an internal volume therein, A substrate support disposed within the aforementioned internal volume, To define the process amount between the substrate support and the target, a target is placed in the internal volume facing the substrate support, and the target includes a cathode surface defined by the surface of the target facing the process amount, A process shield according to any one of claims 1 to 5, disposed around the substrate support and the target to define the outer boundary of the process amount, wherein the process shield includes an anode surface defined by the process amount-facing surface of the process shield, and the surface area of ​​the anode surface is greater than twice the surface area of ​​the cathode surface. A process chamber equipped with a process chamber.

16. The process chamber according to claim 15, wherein the distance between the target and the substrate support at the processing position is approximately 60.0 mm to approximately 160.0 mm.

17. The process chamber according to claim 15, wherein the inner surface of the upper part includes an annular groove that extends radially outward beyond the lower part in order to increase the surface area of ​​the anode surface.

18. The process chamber according to claim 15, further comprising a plurality of ceramic plugs bonded to the top surface of the process shield, for aligning the process shield with the target.

19. A chamber body having an internal volume therein, A substrate support disposed within the aforementioned internal volume, To define the process amount between the substrate support and the target, a target is placed in the internal volume facing the substrate support, and the target includes a cathode surface defined by the surface of the target facing the process amount, A process shield according to claim 2 or 3, disposed around the substrate support and the target to define the outer boundary of the process amount, wherein the process shield includes an anode surface defined by the process amount-facing surface of the process shield, the surface area of ​​the anode surface being greater than twice the surface area of ​​the cathode surface, A covering having an annular body, The first leg of the covering extends downward from the radially outer edge of the annular body, and the first leg is positioned radially outward from the first inner lip in order to define a meandering gas flow path between the first leg and the first inner lip of the process shield. Process chamber.

20. The process chamber according to claim 15, further comprising a plurality of ground loops coupled to the substrate support, the plurality of ground loops configured to contact the process shield to ground the process shield when the substrate support is in a processing position.

Images