Substrate support and substrate processing device

Abstract

A substrate support according to the present invention comprises: a base; a first dielectric part which is disposed above the base and on which a substrate is to be mounted; and a second dielectric part which is disposed so as to surround the first dielectric part and on which an edge ring is to be mounted, wherein the first dielectric part and / or the second dielectric part is provided with a thermal spray layer which is made of an insulating material. A substrate processing device according to the present invention comprises a plasma treatment chamber and the substrate support, which is provided inside the plasma treatment chamber.

Description

Substrate support and substrate processing apparatus

[0001] The present disclosure relates to a substrate support and a substrate processing apparatus.

[0002] Patent Document 1 discloses an electrostatic chuck for holding a substrate. The electrostatic chuck has a dielectric portion, and an electrode for generating an electrostatic attractive force is provided inside the dielectric portion.

[0003] Japanese Patent Application Laid-Open No. 2021-44540

[0004] The technology according to the present disclosure reduces the manufacturing time of the substrate support and reduces the manufacturing cost.

[0005] A substrate support according to one embodiment of the present disclosure comprises a base, a first dielectric portion arranged on top of the base and on which a substrate is placed, and a second dielectric portion arranged to surround the first dielectric portion and on which an edge ring is placed, wherein at least one of the first dielectric portion and the second dielectric portion comprises a sprayed layer of an insulating material.

[0006] According to the present disclosure, it is possible to reduce the manufacturing time of the substrate support and reduce the manufacturing cost.

[0007] 10 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 11 is a block diagram of a computer on which various embodiments can be implemented. FIG. 12 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 13 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to a first embodiment. FIG. 14 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to a second embodiment. FIG. 15 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to a third embodiment. FIG. 16 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to a fourth embodiment. FIG. 17 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to a fifth embodiment. FIG. 18 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to a sixth embodiment. FIG. 19 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to a seventh embodiment. FIG. 19 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to an eighth embodiment. FIG. 19 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to a ninth embodiment. FIG. 20 is an explanatory diagram showing a method for forming an impregnation portion in the ninth embodiment. FIG. 21 is a cross-sectional view showing an outline of the configuration of a power supply terminal according to a tenth embodiment. FIG. 22 is a cross-sectional view showing an outline of the configuration of a power supply terminal according to the tenth embodiment. FIG. 23 is a cross-sectional view showing an outline of the configuration of a power supply terminal according to the tenth embodiment. FIG. 24 is a plan view showing an outline of the configuration of an electrostatic chuck of a substrate support part according to an el 16A and 16B are cross-sectional views showing an outline of the configuration of a main body of a substrate support part according to an eleventh embodiment; 16B are cross-sectional views showing an outline of the configuration of a main body of a substrate support part according to a twelfth embodiment; 16C are plan views showing an outline of the configuration of a heater electrode according to a thirteenth embodiment;

[0008] In the manufacturing process of semiconductor devices, a semiconductor substrate (hereinafter referred to as "substrate") is subjected to plasma processing in, for example, a plasma processing apparatus, which generates plasma by exciting a processing gas inside a chamber, and processes the substrate supported by an electrostatic chuck using the plasma.

[0009] As disclosed in, for example, Patent Document 1, an electrostatic chuck has a dielectric portion provided with an electrode for generating electrostatic attraction therein. Conventionally, the dielectric portion is made of, for example, a sintered plate. However, when the dielectric portion is made of a sintered plate, the manufacturing period is long and the manufacturing cost is high.

[0010] Therefore, the technology disclosed herein reduces the manufacturing time of the substrate support while reducing the manufacturing cost. Hereinafter, a substrate processing apparatus and a substrate support according to this embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0011] <Plasma Processing System> First, a plasma processing system according to one embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram for explaining an example of the configuration of the plasma processing system.

[0012] In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0013] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0014] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0015] <Controller or Control Circuit> Figure 2 is a block diagram of a controller or control circuit (e.g., a computer) that can implement various embodiments described herein. The controller or control circuit in Figure 2 corresponds to the controller 2 described above. The control aspects of the present disclosure may be embodied as a system, method, and / or computer program product. The computer program product may include a computer-readable storage medium having computer-readable program instructions recorded thereon, and one or more processors may execute aspects of the embodiments. Furthermore, the controller in Figure 2 may control processes performed by the plasma processing apparatus of the present disclosure.

[0016] A computer-readable storage medium may be a tangible device capable of storing instructions for use by an instruction execution device (processor). Examples of computer-readable storage media include, but are not limited to, electronic, magnetic, optical, electromagnetic, or semiconductor storage devices, or any suitable combination of these devices. A non-exhaustive list of more specific examples of computer-readable storage media (and suitable combinations) includes each of the following: floppy disks, hard disks, solid-state drives (SSDs), random access memory (RAM), read-only memory (ROM), programmable read-only memory (EPROM or flash), static random access memory (SRAM), compact disks (CDs or CD-ROMs), digital versatile disks (DVDs), and memory cards or sticks. Computer-readable storage media, as used in this disclosure, should not be construed as being transitory signals themselves, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through a waveguide or other transmission medium (e.g., light pulses passing through a fiber optic cable), or electrical signals passing through electrical wires.

[0017] The computer-readable program instructions described in this disclosure can be downloaded to a suitable computing or processing device from a computer-readable storage medium or to an external computer or external storage device via a global network (i.e., the Internet), a local area network, a wide area network, and / or a wireless network. The network may include copper wire, fiber optics, wireless transmissions, routers, firewalls, switches, gateway computers, and edge servers. A network adapter card or network interface in each computing or processing device may receive the computer-readable program instructions from the network and transfer the computer-readable program instructions for storage in a computer-readable storage medium within the computing or processing device.

[0018] Computer-readable program instructions for carrying out the operations of the present disclosure include machine language instructions and / or microcode, and may be compiled or interpreted from source code written in any combination of one or more programming languages, including assembly language, Basic, Fortran, Java, Python, R, C, C++, C#, or similar programming languages. The computer-readable program instructions may execute entirely on a user's personal computer, notebook computer, tablet, or smartphone, or entirely on a remote computer or computer server, or any combination of these computing devices. The remote computer or computer server may be connected to the user's device or devices via a computer network, including a local area network, a wide area network, or a global network (e.g., the Internet). In some embodiments, electronic circuitry, including, for example, a programmable logic circuit, a field programmable gate array (FPGA), or a programmable logic array (PLA), executes the computer-readable program instructions using information from the computer-readable program instructions to configure or customize the electronic circuitry to carry out aspects of the present disclosure.

[0019] Aspects of the present disclosure are described with reference to flow diagrams and block diagrams of methods, apparatus (systems), and computer program products according to the disclosed embodiments. Those skilled in the art will understand that each block of the flow diagrams and block diagrams, and combinations of blocks in the flow diagrams and block diagrams, can be implemented by computer-readable program instructions.

[0020] Computer-readable program instructions capable of implementing the systems and methods described in this disclosure may be provided to one or more processors (and / or one or more cores within a processor) of a general-purpose computer, special-purpose computer, or other programmable device. These computer-readable program instructions may be stored on a computer-readable storage medium that can direct a computer, programmable device, and / or other device to function in a particular manner, in which case the computer-readable storage medium storing the instructions is an article of manufacture containing instructions that implement aspects of the functionality specified in the flow diagrams and block diagrams of this disclosure.

[0021] Furthermore, the computer-readable program instructions may be loaded into a computer, other programmable device, or other device, and the instructions, when executed on the computer, other programmable device, or other device, may cause a series of operational steps to be performed to create a computer-implemented process such that the functions specified in the flow diagrams and block diagrams of this disclosure are implemented.

[0022] 2 is a functional block diagram illustrating a networked system 800 of one or more networked computers and servers. In one embodiment, the hardware and software environment illustrated in FIG. 2 may provide an exemplary platform for implementation of software and / or methods according to the present disclosure.

[0023] As shown in Figure 2, networked system 800 may include, but is not limited to, a computer 805, a network 810, a remote computer 815, a web server 820, a cloud storage server 825, and a computer server 830. In some embodiments, multiple instances of one or more of the functional blocks shown in Figure 2 may be employed.

[0024] Additional details of computer 805 are shown in Figure 2. The functional blocks shown in computer 805 are provided only to establish example functionality and are not intended to be exhaustive. Also, although details are not provided for remote computer 815, web server 820, cloud storage server 825, and computer server 830, these other computers and devices may have similar functionality shown for computer 805.

[0025] The computer 805 can be a personal computer (PC), a desktop computer, a laptop computer, a tablet computer, a netbook computer, a personal digital assistant (PDA), a smartphone, or any other programmable electronic device capable of communicating with other devices on the network 810.

[0026] Computer 805 may include a processor 835, a bus 837, memory 840, non-volatile storage 845, a network interface 850, a peripherals interface 855, and a display interface 865. Each of these functions may, in some embodiments, be implemented as an individual electronic subsystem (an integrated circuit chip or combination of chips and associated devices), or in other embodiments, some combination of functions may be implemented on a single chip (sometimes called a system on a chip, or SoC).

[0027] Processor 835 may be one or more single or multi-chip microprocessors.

[0028] Bus 837 may be a proprietary standard high-speed parallel or serial peripheral interconnect bus such as ISA, PCI, PCI Express (PCI-e), AGP, or the like.

[0029] The memory 840 and the non-volatile storage 845 may be computer-readable storage media. The memory 840 may include any suitable volatile storage device, such as dynamic random access memory (DRAM) and static random access memory (SRAM). The non-volatile storage 845 may include one or more of a floppy disk, a hard disk, a solid-state drive (SSD), a read-only memory (ROM), a programmable read-only memory (EPROM or Flash), a compact disk (CD or CD-ROM), a digital versatile disk (DVD), and a memory card or stick.

[0030] Program 848 may be a collection of machine-readable instructions and / or data stored in non-volatile storage 845 and used to create, manage, and control certain software functions described in detail elsewhere in this disclosure and illustrated in the figures. In some embodiments, memory 840 may be significantly faster than non-volatile storage 845. In such embodiments, program 848 may be transferred from non-volatile storage 845 to memory 840 before being executed by processor 835.

[0031] Computer 805 can communicate and interact with other computers over network 810 via network interface 850. Network 810 may include, for example, a local area network (LAN), a wide area network (WAN) such as the Internet, or a combination of both, wired, wireless, or fiber optic connections. In general, network 810 can be any combination of connections and protocols that support communication between two or more computers and associated devices.

[0032] The peripherals interface 855 may enable data input and output from the computer 805 to other devices that may be locally connected. For example, the peripherals interface 855 may provide a connection to external devices 860. The external devices 860 may include devices such as a keyboard, a mouse, a keypad, a touchscreen, and / or other suitable input devices. The external devices 860 may also include portable computer-readable storage media, such as thumb drives, portable optical or magnetic disks, and memory cards. Software and data used in embodiments of the present disclosure may be stored, for example, in the program 848, portable computer-readable storage media, or the like. In such embodiments, software may be loaded into the non-volatile storage 845 or, alternatively, directly into the memory 840 via the peripherals interface 855. The peripherals interface 855 may connect to the external devices 860 using industry-standard connections, such as RS-232 or Universal Serial Bus (USB).

[0033] Display interface 865 may connect computer 805 to a display 870, which in some embodiments may be used to present a command line or graphical user interface to a user of computer 805. Display interface 865 may connect to display 870 using one or more proprietary connections or industry standard connections such as VGA, DVI, DisplayPort, HDMI, etc.

[0034] As mentioned above, network interface 850 provides for communication with other computing and storage systems or devices external to computer 805. Software programs and data described herein may be downloaded to non-volatile storage 845 via network interface 850 and network 810 from, for example, remote computer 815, web server 820, cloud storage server 825, and computer server 830. Furthermore, the systems and methods described in this disclosure may be performed by one or more computers connected to computer 805 via network interface 850 and network 810. For example, in some embodiments, the systems and methods described in this disclosure may be performed by remote computer 815, computer server 830, or a combination of interconnected computers on network 810.

[0035] Data, datasets and / or databases used in embodiments of the implementation of the systems and methods described in this disclosure may be stored or downloaded from a remote computer 815, a web server 820, a cloud storage server 825 and a computer server 830.

[0036] <Plasma Processing Apparatus> A configuration example of a capacitively coupled plasma processing apparatus will be described below as an example of the plasma processing apparatus 1. Fig. 3 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0037] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 as an example of a substrate support, and a gas inlet unit. The gas inlet unit is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet unit includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0038] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0039] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive material such as aluminum and has a generally disk shape. The conductive material of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a first dielectric portion 1111a and a second dielectric portion 1111b. In one embodiment, the first dielectric portion 1111a has a central region 111a and is configured to support the substrate W. The second dielectric portion 1111b has an annular region 111b and is configured to support the ring assembly 112. The second dielectric portion 1111b is disposed to surround the first dielectric portion 1111a.

[0040] Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. At least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32 (described later) may be disposed within the electrostatic chuck 1111. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, an electrode within the electrostatic chuck 1111 may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0041] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are made of a conductive or insulating material, and the cover rings are made of an insulating material. Note that the cover ring may be omitted.

[0042] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110c, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow path 1110c. In one embodiment, the flow path 1110c is formed in the base 1110, and one or more heaters are disposed in the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0043] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0044] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0045] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0046] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0047] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0048] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0049] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0050] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0051] <Substrate Supporting Section> Next, the configuration of the above-described substrate supporting section 11 will be described by taking a number of exemplary embodiments as examples.

[0052] 4 is a cross-sectional view showing an outline of the configuration of the main body of the substrate support according to the first embodiment. Note that the first embodiment is characterized by the configuration of the first dielectric portion 1111a, and the second dielectric portion 1111b is not shown in the example of FIG.

[0053] The first dielectric portion 1111a includes a sprayed layer 200 and a sintered layer 201. The sprayed layer 200 is made of an insulating material, for example, Al. ２ O ３The sintered layer 201 is formed by spraying ceramic such as aluminum oxide (aluminum oxide, alumina). ２ O ３ The sintered layer 201 is disposed on top of the thermal sprayed layer 200, and the upper surface of the sintered layer 201 forms a central region 111a (substrate support surface) for supporting the substrate W.

[0054] A heater electrode 202 for adjusting the temperature of the substrate W is provided inside the sprayed layer 200. The heater electrode 202 is formed by spraying a conductive material, for example, a metal. An electrostatic electrode 203 for attracting the substrate W is provided inside the sintered layer 201. The electrostatic electrode 203 is formed by sintering a conductive material, for example, a metal.

[0055] The arrangement of the heater electrode 202 and the electrostatic electrode 203 is not limited to this embodiment. For example, the heater electrode 202 may be arranged at the interface between the sprayed layer 200 and the sintered layer 201. The heater electrode 202 and the electrostatic electrode 203 may each be divided. Furthermore, a bias electrode (not shown) to which DC or AC bias power is supplied may be provided inside the first dielectric portion 1111a.

[0056] The first dielectric portion 1111a is disposed on the base 1110 via a bonding layer 204. The bonding layer 204 functions as an adhesive that bonds the thermal spray layer 200 and the base 1110. The bonding layer 204 is formed from a plasma-resistant and heat-resistant material, such as an acrylic resin, a silicone resin, or an epoxy resin.

[0057] As described above, the first dielectric portion 1111 a has a hybrid structure including the sprayed layer 200 and the sintered layer 201 .

[0058] Here, the sprayed layer 200 has the advantage of being able to be produced in a short time and at low production costs. On the other hand, when the RF power or the power supplied to the electrostatic electrode 203 is large, abnormal discharge may occur, which may cause deterioration of the sprayed layer 200. Furthermore, the sprayed layer 200 has a low density, and is prone to surface changes over time when exposed to plasma. Therefore, it has lower plasma resistance than the sintered layer 201, and its lifespan is shorter than that of the sintered layer 201. Therefore, the sprayed layer 200 is arranged on the side not exposed to plasma.

[0059] The sintered layer 201 can be used even when the RF power is large and the power supplied to the electrostatic electrode 203 is large, and can accommodate high power. Moreover, the sintered layer 201 has high plasma resistance, a long lifespan, and generates little dust. On the other hand, the sintered layer 201 requires a long manufacturing period and is expensive to manufacture. Therefore, the sintered layer 201 is disposed only on the side exposed to plasma.

[0060] According to this embodiment, the first dielectric portion 1111a combines the advantages of the sprayed layer 200 and the sintered layer 201. That is, the sintered layer 201 on the plasma-exposed surface side achieves high power and a long life, while the sprayed layer 200 on the non-exposed surface side achieves a shorter manufacturing period (lead time) and lower manufacturing costs.

[0061] Furthermore, since the heater electrode 202 is formed by thermal spraying, it is possible to reduce the manufacturing cost while shortening the manufacturing period of the heater electrode 202. As a result, it is possible to easily manufacture the heater electrode 202 in accordance with, for example, any heater pattern.

[0062] In this embodiment, when manufacturing the first dielectric portion 1111a, a sintered layer 201 having an electrostatic electrode 203 therein is prepared, and then the sprayed layer 200 and the heater electrode 202 are formed on the sintered layer 201 by thermal spraying. The sprayed layer 200 is then bonded to the base 1110 via a bonding layer 204. At this time, the bonding layer 204 is a flexible adhesive, so that the sprayed layer 200 and the base 1110 can be appropriately bonded. Moreover, the bonding layer 204 can also reduce thermal resistance.

[0063] As described above, in terms of manufacturing, it is preferable that the substrate support portion 11 includes the bonding layer 204. However, as described above, from the viewpoint of making the most of the advantages of the sprayed layer 200 and the sintered layer 201, the bonding layer 204 can be omitted.

[0064] Second Embodiment FIG. 5 is a cross-sectional view showing an outline of the configuration of a main body of a substrate support according to a second embodiment.

[0065] The first dielectric portion 1111a includes a sintered layer 210. The sintered layer 210 is made of an insulating material, for example, Al. ２ O ３ The upper surface of the sintered layer 210 forms a central region 111a (substrate support surface) for supporting the substrate W.

[0066] A first electrostatic electrode 211 for attracting the substrate W is provided inside the sintered layer 210. The first electrostatic electrode 211 is formed by sintering a conductive material, for example, a metal. The first electrostatic electrode 211 may be divided. A heater electrode (not shown) for heating the substrate W and a bias electrode (not shown) to which DC or AC bias power is supplied may also be provided inside the sintered layer 201.

[0067] The first dielectric portion 1111a is disposed on the base 1110 via a bonding layer 212. The bonding layer 212 is formed of the same material as the bonding layer 204 of the first embodiment, and functions as an adhesive that bonds the sintered layer 210 and the base 1110 together.

[0068] The second dielectric portion 1111b surrounds the first dielectric portion 1111a and includes a thermal spray layer 220. The thermal spray layer 220 is made of an insulating material, for example, Al. ２ O ３The thermal sprayed layer 220 is formed by thermally spraying a ceramic such as a ceramic material onto the outer periphery of the base 1110. The upper surface of the thermal sprayed layer 220 forms an annular region 111b (ring support surface) for supporting the ring assembly 112. The arrangement of the first dielectric portion 1111a and the second dielectric portion 1111b is not limited to that of this embodiment. For example, the first dielectric portion 1111a and the second dielectric portion 1111b may be separated from each other to suppress thermal interference between the first dielectric portion 1111a and the second dielectric portion 1111b.

[0069] A second electrostatic electrode 221 for attracting the ring assembly 112 is provided inside the sprayed layer 220. The second electrostatic electrode 221 is formed by spraying a conductive material, for example, a metal. The second electrostatic electrode 221 may be divided. A heater electrode (not shown) for heating the substrate W and a bias electrode (not shown) to which DC or AC bias power is supplied may also be provided inside the sprayed layer 220.

[0070] Here, the temperature of the edge ring of the ring assembly 112 may need to be set to a value lower than the temperature of the substrate W. However, the suction area of ​​the ring support surface of the annular region 111b is smaller than the area of ​​the edge ring exposed to plasma. Therefore, it is necessary to improve the heat removal capacity of the second dielectric portion 1111b that supports the ring assembly 112.

[0071] However, in the past, the second dielectric part had a sintered layer made of an insulating material, and the sintered layer was placed on the base via a bonding layer, so that a heat dissipation capacity greater than that of the bonding layer was sometimes required. In addition, to improve the heat dissipation capacity, a heat transfer gas, such as He gas, is sometimes supplied between the sintered layer of the second dielectric part and the edge ring, but in this case, there is a risk of abnormal discharge occurring on the underside of the edge ring.

[0072] In this regard, in this embodiment, the sprayed layer 220 of the second dielectric portion 1111b is disposed directly on the base 1110 without a bonding layer in between. This improves the heat dissipation capacity. Furthermore, by forming the second dielectric portion 1111b with the sprayed layer 220, it is possible to shorten the manufacturing period and reduce the manufacturing cost.

[0073] 6 is a cross-sectional view showing an outline of the configuration of a main body of a substrate support according to a third embodiment. The third embodiment is a modification of the second embodiment.

[0074] The first dielectric portion 1111a includes a sintered layer 230. The sintered layer 230 is made of an insulating material, for example, Al. ２ O ３ The upper surface of the sintered layer 230 forms a central region 111a (substrate support surface) for supporting the substrate W.

[0075] A first electrostatic electrode 231 for attracting the substrate W is provided inside the sintered layer 230. The first electrostatic electrode 231 is formed by sintering a conductive material, for example, a metal. The first electrostatic electrode 231 may be divided.

[0076] The first dielectric portion 1111a is disposed on a thermal spray layer 240 (described later) via a bonding layer 232. The bonding layer 232 is formed of the same material as the bonding layer 212 of the second embodiment, and functions as an adhesive that bonds the sintered layer 230 and the thermal spray layer 240 (described later).

[0077] The second dielectric portion 1111b includes a sprayed layer 240. The sprayed layer 240 is made of an insulating material, for example, Al. ２ O ３ The thermal spray layer 240 is formed by thermally spraying a ceramic such as a ceramic material onto the entire surface of the base 1110. That is, the thermal spray layer 240 is disposed so as to extend to the lower part of the first dielectric portion 1111a. The outer periphery of the upper surface of the thermal spray layer 240 forms an annular region 111b (ring support surface) for supporting the ring assembly 112.

[0078] A second electrostatic electrode 241 for attracting the ring assembly 112 is provided on the inner outer periphery of the thermal sprayed layer 240. The second electrostatic electrode 241 is formed by thermal spraying a conductive material, for example, a metal. The second electrostatic electrode 241 may be divided.

[0079] This embodiment also provides the same effects as the second embodiment. That is, the sprayed layer 240 of the second dielectric portion 1111b is disposed directly on the base 1110 without a bonding layer, thereby improving the heat dissipation capacity. Furthermore, by forming the second dielectric portion 1111b with the sprayed layer 240, it is possible to shorten the manufacturing period and reduce the manufacturing cost.

[0080] 7 is a cross-sectional view showing an outline of the configuration of a main body of a substrate support according to a fourth embodiment. The fourth embodiment is an example in which the first embodiment and the third embodiment are combined.

[0081] The first dielectric portion 1111a includes a first sprayed layer 250 and a sintered layer 251. The first sprayed layer 250 is made of an insulating material, for example, Al. ２ O ３ The sintered layer 251 is formed by spraying a ceramic such as Al. ２ O ３ The sintered layer 251 is disposed on the first sprayed layer 250, and the upper surface of the sintered layer 251 forms a central region 111a (substrate support surface) for supporting the substrate W.

[0082] A first electrostatic electrode 252 for attracting the substrate W is provided inside the sintered layer 251. The first electrostatic electrode 252 is formed by sintering a conductive material, for example, a metal. The first electrostatic electrode 252 may be divided.

[0083] The first dielectric portion 1111a is disposed on a second sprayed layer 260 (described later) via a bonding layer 253. The bonding layer 253 is formed of the same material as the bonding layer 204 of the first embodiment, and functions as an adhesive that bonds the first sprayed layer 250 and the second sprayed layer 260 together.

[0084] The second dielectric portion 1111b includes a second sprayed layer 260. The second sprayed layer 260 is made of an insulating material, for example, Al. ２ O ３ The second sprayed layer 260 is formed by thermally spraying a ceramic such as a ceramic material onto the entire surface of the base 1110. That is, the second sprayed layer 260 is disposed so as to extend to the lower part of the first dielectric portion 1111a. The outer periphery of the upper surface of the second sprayed layer 260 forms an annular region 111b (ring support surface) for supporting the ring assembly 112.

[0085] A second electrostatic electrode 261 for attracting the ring assembly 112 is provided on the inner outer periphery of the second sprayed layer 260. The second electrostatic electrode 261 is formed by spraying a conductive material, for example, a metal. The second electrostatic electrode 261 may be divided.

[0086] This embodiment achieves both the effects of the first and third embodiments. That is, in the first dielectric portion 1111a, the sintered layer 251 on the plasma-exposed surface achieves high power and long life, while the first sprayed layer 250 on the non-exposed surface achieves a shorter manufacturing period and lower manufacturing costs. Furthermore, in the second dielectric portion 1111b, the second sprayed layer 260 is disposed directly on the base 1110 without a bonding layer, improving heat dissipation capability. Furthermore, by forming the second dielectric portion 1111b with the second sprayed layer 260, it is possible to shorten the manufacturing period and lower manufacturing costs.

[0087] In this embodiment, the spray material of the first sprayed layer 250 and the spray material of the second sprayed layer 260 are the same, but these spray materials may be different.

[0088] Fifth Embodiment FIG. 8 is a cross-sectional view showing the outline of the configuration of a main body of a substrate support according to a fifth embodiment.

[0089] The first dielectric portion 1111a includes a first sprayed layer 270 and a first sintered layer 271. The first sprayed layer 270 includes a plurality of stacked first sprayed layers, for example, two first sprayed layers 270a and 270b. The first upper sprayed layer 270a disposed on the upper side is made of an insulating material, for example, Al.２ O ３ The first lower sprayed layer 270b disposed on the lower side is also formed by spraying a ceramic such as Al. ２ O ３ The first sintered layer 271 is formed by spraying a ceramic such as Al. ２ O ３ The first sintered layer 271 is disposed on top of the first thermal sprayed layer 270, and the upper surface of the first sintered layer 271 forms a central region 111a (substrate support surface) for supporting the substrate W.

[0090] The thickness of the first upper sprayed layer 270a is adjusted appropriately depending on, for example, the distance between a first bias electrode 272 (described later) and a first electrostatic electrode 273. The thickness of the first lower sprayed layer 270b is adjusted appropriately depending on, for example, the distance between a first electrostatic electrode 273 (described later) and a base 1110.

[0091] A first bias electrode 272 is provided at the interface between the first upper sprayed layer 270a and the first lower sprayed layer 270b. A DC pulse bias power is supplied to the first bias electrode 272 to control the plasma potential. The first bias electrode 272 is formed by spraying a conductive material, such as a metal, onto the first upper sprayed layer 270a. The first bias electrode 272 has a uniform outer diameter and is coaxial. The first bias electrode 272 may be divided.

[0092] A first electrostatic electrode 273 for attracting the substrate W is provided at the interface between the first sintered layer 271 and the first upper sprayed layer 270a. The first electrostatic electrode 273 is formed by spraying a conductive material, such as a metal, onto the first sintered layer 271. The first electrostatic electrode 273 may be formed with different outer dimensions and as a monopole, bipole, or coaxial electrode, as required, and an electrode structure for electrical conduction may be created. The first electrostatic electrode 273 may also be divided.

[0093] The arrangement of the first bias electrode 272 and the first electrostatic electrode 273 is not limited to this embodiment. For example, the first electrostatic electrode 273 may be provided inside the first sintered layer 271. In this case, the first electrostatic electrode 273 is formed by sintering a conductive material, for example, a metal.

[0094] The second dielectric portion 1111b includes a second sprayed layer 280 and a second sintered layer 281. The second sprayed layer 280 includes a plurality of stacked second sprayed layers, for example, two second sprayed layers 280a and 280b. The second upper sprayed layer 280a disposed on the upper side is made of an insulating material, for example, Al. ２ O ３ The second lower sprayed layer 280b disposed on the lower side is also formed by spraying a ceramic such as Al. ２ O ３ The second sintered layer 281 is formed by spraying a ceramic such as Al. ２ O ３ The second sintered layer 281 is disposed on top of the second thermal sprayed layer 280, and the upper surface of the second sintered layer 281 forms an annular region 111b (ring support surface) for supporting the ring assembly 112.

[0095] The thickness of the second upper sprayed layer 280a is adjusted appropriately depending on, for example, the distance between a second bias electrode 282 (described later) and a second electrostatic electrode 283. The thickness of the second lower sprayed layer 280b is adjusted appropriately depending on, for example, the distance between a second electrostatic electrode 283 (described later) and the base 1110.

[0096] A second bias electrode 282, to which a DC pulse bias power is supplied, is provided at the interface between the second upper sprayed layer 280a and the second lower sprayed layer 280b. The second bias electrode 282 is formed by spraying a conductive material, such as a metal, onto the second upper sprayed layer 280a. The second bias electrode 282 is formed with a uniform outer diameter and is coaxial. The second bias electrode 282 may also be divided.

[0097] A second electrostatic electrode 283 for attracting the substrate W is provided at the interface between the second sintered layer 281 and the second upper sprayed layer 280a. The second electrostatic electrode 283 is formed by spraying a conductive material, such as a metal, onto the second sintered layer 281. The second electrostatic electrode 283 may be formed with different outer dimensions and as a monopole, bipole, or coaxial electrode, as required, and an electrode structure for electrical conduction may also be created. The second electrostatic electrode 283 may also be divided.

[0098] The arrangement of the second bias electrode 282 and the second electrostatic electrode 283 is not limited to this embodiment. For example, the second electrostatic electrode 283 may be provided inside the second sintered layer 281. In such a case, the second electrostatic electrode 283 is formed by sintering a conductive material, for example, a metal. Also, the second bias electrode 282 and the second electrostatic electrode 283 may be omitted.

[0099] According to this embodiment, the first dielectric portion 1111a can achieve high power and long life with the first sintered layer 271 on the plasma-exposed surface side, while shortening the manufacturing period and reducing manufacturing costs with the first sprayed layer 270 on the non-exposed surface side. The second dielectric portion 1111b can also enjoy the same effects as the first dielectric portion 1111a.

[0100] In this embodiment, the first dielectric portion 1111a has a first sprayed layer 270 and the second dielectric portion 1111b has a second sprayed layer 280, but either the first dielectric portion 1111a or the second dielectric portion 1111b may be formed of only a sintered layer.

[0101] Furthermore, according to this embodiment, the first sprayed layer 270 includes a plurality of first sprayed layers 270 a, 270 b, which makes it possible to control the distance between the first bias electrode 272 and the substrate W and improve power efficiency. The second sprayed layer 280 can also enjoy the same effects as the first sprayed layer 270.

[0102] The number of layers of the first sprayed layer 270 and the second sprayed layer 280 is not limited to that in this embodiment. For example, the number of layers may be one, or three or more.

[0103] In this embodiment, the spray material of the first upper sprayed layer 270 a and the spray material of the first lower sprayed layer 270 b are the same, but these spray materials may be different, making it possible to take advantage of the characteristics of each layer, and for example, a spray material suitable for the electrode contained therein can be used.

[0104] Furthermore, according to this embodiment, the first bias electrode 272 and the first electrostatic electrode 273 are formed by thermal spraying, which reduces the manufacturing time and manufacturing costs of the electrodes 272 and 273. As a result, the electrodes 272 and 273 can be easily manufactured to fit any desired pattern, for example.

[0105] In this embodiment, the first bias electrode 272 and the second bias electrode 282 may be arranged to overlap each other in a plan view. In this case, the impedance can be controlled by adjusting the parasitic capacitance generated between the first bias electrode 272 and the second bias electrode 282, and the amount of the bias RF signal propagating between the substrate W side and the ring assembly 112 side can be controlled.

[0106] In this embodiment, when manufacturing the first dielectric portion 1111a, first, a first sintered layer 271 is prepared. Then, a first electrostatic electrode 273, a first upper sprayed layer 270a, a first bias electrode 272, and a first lower sprayed layer 270b are sequentially formed by thermal spraying on the first sintered layer 271. When forming the first electrostatic electrode 273 and the first bias electrode 272, a pattern may be formed by direct spraying using a mask, or a pattern may be formed by machining or burning off after full-surface spraying.

[0107] Although not shown in the present embodiment, after the first dielectric portion 1111a is fabricated, the first lower sprayed layer 270b may be bonded to the base 1110 via a first bonding layer (not shown). The first bonding layer is provided with a flexible adhesive, and can appropriately bond the first lower sprayed layer 270b and the base 1110. The first bonding layer also makes it possible to reduce thermal resistance.

[0108] The second dielectric portion 1111b can be manufactured in the same manner as the first dielectric portion 1111a. In the second dielectric portion 1111b, the second lower sprayed layer 280b may be bonded to the base 1110 via a second bonding layer (not shown).

[0109] 9 is a cross-sectional view showing an outline of the configuration of a main body of a substrate support according to a sixth embodiment. The sixth embodiment is a modification of the fifth embodiment.

[0110] In this embodiment, the first dielectric portion 1111a and the second dielectric portion 1111b are spaced apart from each other. The base 1110 includes a first base 1110a and a second base 1110b, which are spaced apart from each other. The first base 1110a is a base below the first dielectric portion 1111a, and the second dielectric portion 1111b is a base below the second dielectric portion 1111b.

[0111] In this way, by separating the first dielectric portion 1111a and the first base 1110a from the second dielectric portion 1111b and the second base 1110b, it is possible to suppress thermal interference between them. Note that such separation may be applied to the first to fifth embodiments.

[0112] The first dielectric portion 1111a includes a first sprayed layer 290 and a first sintered layer 291. The first sprayed layer 290 is made of an insulating material, for example, Al. ２ O ３ The first sintered layer 291 is formed by spraying a ceramic such as Al. ２ O ３ The first sprayed layer 290 may include a plurality of sprayed layers, similar to the first sprayed layer 270 of the fifth embodiment. The first sintered layer 291 is disposed on top of the first sprayed layer 290, and the upper surface of the first sintered layer 291 forms a central region 111a (substrate support surface) for supporting the substrate W.

[0113] A first heater electrode 292 for heating the substrate W is provided at the interface between the first sintered layer 291 and the first sprayed layer 290. The first heater electrode 292 is formed by spraying a conductive material, for example, a metal, onto the first sintered layer 291. The first heater electrode 292 may be divided.

[0114] A first electrostatic electrode 293 for attracting the substrate W is provided inside the first sintered layer 291. The first electrostatic electrode 293 is formed by sintering a conductive material, for example, a metal. The first electrostatic electrode 293 may be divided.

[0115] The arrangement of the first heater electrode 292 and the first electrostatic electrode 293 is not limited to this embodiment.

[0116] The second dielectric portion 1111b includes a second sprayed layer 300 and a second sintered layer 301. The second sprayed layer 300 is made of an insulating material, for example, Al. ２ O ３ The second sprayed layer 300 may include a plurality of sprayed layers, similar to the second sprayed layer 280 of the fifth embodiment. The second sintered layer 301 is made of an insulating material, for example, Al. ２ O ３ The second sintered layer 301 is disposed on top of the second thermal sprayed layer 300, and the upper surface of the second sintered layer 301 forms an annular region 111b (ring support surface) for supporting the ring assembly 112.

[0117] A second heater electrode 302 for heating the ring assembly 112 is provided at the interface between the second sintered layer 301 and the second thermal sprayed layer 300. The second heater electrode 302 is formed by thermal spraying a conductive material, for example, a metal, onto the second sintered layer 301. The second heater electrode 302 may be divided.

[0118] A second electrostatic electrode (not shown) for attracting the ring assembly 112 may be provided inside the second sintered layer 301. In this case, the second electrostatic electrode is formed by sintering a conductive material, for example, a metal. The second electrostatic electrode may be divided.

[0119] This embodiment also provides the same effects as those of the fifth embodiment. That is, the first dielectric portion 1111a can achieve high power and long life with the first sintered layer 291 on the plasma-exposed surface side, while shortening the manufacturing period and reducing manufacturing costs with the first sprayed layer 290 on the non-exposed surface side. The second dielectric portion 1111b can also provide the same effects as those of the first dielectric portion 1111a.

[0120] In this embodiment, the first dielectric portion 1111a has a first sprayed layer 290 and the second dielectric portion 1111b has a second sprayed layer 300, but either the first dielectric portion 1111a or the second dielectric portion 1111b may be formed of only a sintered layer.

[0121] In this embodiment, when manufacturing the first dielectric portion 1111a, a first sintered layer 291 having a first electrostatic electrode 293 therein is prepared, and then a first heater electrode 292 and a first sprayed layer 290 are formed sequentially by thermal spraying on the first sintered layer 291. When forming the first heater electrode 292, a pattern may be formed by direct thermal spraying using a mask, or a pattern may be formed by machining or burning off after full surface spraying.

[0122] In manufacturing the first dielectric portion 1111a, after forming the first heater electrode 292, the heat generation distribution within the substrate surface may be measured by supplying power to the first heater electrode 292. By trimming the line width of the first heater electrode 292 so as to correct the difference between the measured heat generation distribution and the designed heat generation distribution, it is possible to correct individual differences in manufacturing and manufacture a first dielectric portion 1111a with excellent temperature uniformity within the surface.

[0123] Although not shown in the present embodiment, after the first dielectric portion 1111a is fabricated, the first sprayed layer 290 may be bonded to the base 1110 via a first bonding layer (not shown). The first bonding layer is provided with a flexible adhesive, and can appropriately bond the first sprayed layer 290 and the base 1110. The first bonding layer also makes it possible to reduce thermal resistance.

[0124] The second dielectric portion 1111b can be manufactured in the same manner as the first dielectric portion 1111a. The second sprayed layer 300 in the second dielectric portion 1111b may be bonded to the base 1110 via a second bonding layer (not shown).

[0125] Seventh Embodiment Fig. 10 is a cross-sectional view showing an outline of the configuration of the main body of a substrate support according to a seventh embodiment. In this embodiment, the bonding layer that bonds the first dielectric portion 1111a and the base 1110 in the first to sixth embodiments is protected. In the following example, a case where the bonding layer 212 in the second embodiment is protected will be described. In the example of Fig. 10, the second dielectric portion 1111b is not shown.

[0126] The diameter of the bonding layer 212 that bonds the first dielectric portion 1111a and the base 1110 is smaller than the diameter of the first dielectric portion 1111a. A sprayed ring 310 is disposed on the outer periphery of this bonding layer 212 as a protective member so as to cover the outer surface of the bonding layer 212. The sprayed ring 310 is disposed below the sintered layer 210 of the first dielectric portion 1111a. The sprayed ring 310 has a substantially annular shape. The radial thickness of the sprayed ring 310 is set in consideration of the heat removal capacity, and is, for example, several mm.

[0127] The sprayed ring 310 is made of an insulating material, for example, Al. ２ O ３ In this embodiment, after the sprayed ring 310 is formed in this manner, a bonding layer 212 is formed on the inside of the sprayed ring 310, and then a sintered layer 210 is formed on the bonding layer 212 and the sprayed ring 310.

[0128] Here, when the bonding layer 212 is exposed to plasma, the bonding layer 212 is worn over time. When the bonding layer 212 is worn, the thermal resistance of that portion increases. To address this issue, it is conceivable to provide an orb, for example, on the outer periphery of the bonding layer 212, but the application of the orb is difficult and expensive. Furthermore, there is a risk that the orb may detach from the bonding layer 212.

[0129] In this regard, in this embodiment, the sprayed ring 310 is provided so as to cover the outer surface of the bonding layer 212, thereby suppressing wear of the bonding layer 212 and improving the heat removal capacity. Moreover, the sprayed ring 310 has the advantage of being manufactured in a short period of time and at low manufacturing costs. Furthermore, the sprayed ring 310 does not detach from the bonding layer 212.

[0130] Eighth Embodiment Fig. 11 is a cross-sectional view showing an outline of the configuration of the main body of a substrate support according to an eighth embodiment. The eighth embodiment is a modification of the seventh embodiment, and protects the bonding layer in the first to sixth embodiments. In the following example, the case where the bonding layer 212 in the second embodiment is protected will also be described, and in the example of Fig. 11, the second dielectric portion 1111b is not shown.

[0131] The diameter of the bonding layer 212 that bonds the first dielectric portion 1111a and the base 1110 is approximately the same as the diameter of the first dielectric portion 1111a. A sprayed ring 320 is arranged as a protective member on the outer periphery of this bonding layer 212 so as to cover the outer surface of the bonding layer 212. The upper part of the sprayed ring 320 may cover the lower outer surface of the sintered layer 210. The sprayed ring 320 has a substantially annular shape. The radial thickness of the sprayed ring 320 is set in consideration of the balance with the heat extraction capacity, and is, for example, several mm.

[0132] The sprayed ring 320 is made of an insulating material, for example, Al. ２ O ３ In this embodiment, after the sintered layer 210 is bonded to the base 1110 via the bonding layer 212, the sprayed ring 320 is formed by thermal spraying.

[0133] This embodiment also provides the same effects as the seventh embodiment. That is, since the thermal spray ring 320 is provided so as to cover the outer surface of the bonding layer 212, wear on the bonding layer 212 can be suppressed and the heat extraction capacity can be improved. Moreover, the thermal spray ring 320 has the advantage of being manufactured in a short period of time and at low manufacturing costs. Furthermore, the thermal spray ring 320 does not detach from the bonding layer 212.

[0134] <Ninth embodiment> Figure 12 is a cross-sectional view showing an outline of the configuration of the main body of a substrate support according to a ninth embodiment. In this embodiment, in the first to eighth embodiments, an impregnation portion is provided at a desired position in the main body 111. In the following example, a case where an impregnation portion is provided in the first dielectric portion 1111a in the first embodiment will be described. Also, in the example of Figure 12, the second dielectric portion 1111b is not shown.

[0135] A through hole 330 is formed in the main body 111. The through hole 330 is provided so as to penetrate the sintered layer 201 and the sprayed layer 200 of the first dielectric portion 1111a, the bonding layer 204, and the base 1110. The through hole 330 can be used for any purpose, but may be used, for example, as a flow path for a heat transfer gas to flow, a path for supplying power to an electrode, a through hole through which a lift pin for mounting the substrate W on the electrostatic chuck 1111 is inserted, or the like.

[0136] During processing of the substrate W, the plasma processing space 10s is maintained in a vacuum atmosphere, while the interior of the through-hole 330 is in an air atmosphere. Since the sprayed layer 200 has a porous structure, there is a risk that air in the through-hole 330 may leak through the sprayed layer 200 into the plasma processing space 10s, which is in a vacuum atmosphere.

[0137] Therefore, in this embodiment, an impregnation portion 340 is formed around the through hole 330 in the thermal spray layer 200. The impregnation portion 340 is formed, for example, by impregnating the sprayed portion with a resin. In this case, the impregnation portion 340 seals the periphery of the through hole 330, thereby suppressing air leakage from the through hole 330 described above.

[0138] As described above, the impregnation portion 340 is formed by impregnating the sprayed portion around the through hole 330 with resin. In order to appropriately control the range of the impregnation portion 340, the impregnation portion 340 is formed using the following method in this embodiment. Figure 13 is an explanatory diagram showing a method for forming the impregnation portion 340. In Figure 13, the flow on the left is a plan view of the periphery of the through hole 330 as seen from the bottom side, and the flow on the right is a cross-sectional view of the periphery of the through hole 330.

[0139] First, as shown in FIG. 13( a ), a sintered layer 201 having through-holes 330 formed therein is prepared.

[0140] 13B, a sprayed portion 341 is formed on the lower surface of the sintered layer 201 in a desired area of ​​the through-hole 330. The sprayed portion 341 is made of an insulating material, for example, Al. ２ O ３ Since the sprayed portion 341 is formed by spraying in this manner, the formation range and formation thickness in a plan view can be appropriately controlled.

[0141] Next, as shown in FIG. 13( c ), the sprayed portion 341 is impregnated with resin to form an impregnated portion 340 .

[0142] 13(d), a sprayed layer 200 is formed on the entire lower surface of the sintered layer 201. The sprayed layer 200 is made of an insulating material, for example, Al. ２ O ３ At this time, the sprayed layer 200 is also formed on the lower surface side of the impregnation portion 340.

[0143] 13( e), the thermal sprayed layer 200 on the underside of the impregnation portion 340 is ground to expose the impregnation portion 340. In this way, the impregnation portion 340 is formed around the through hole 330 in the thermal sprayed layer 200.

[0144] In this embodiment, the impregnation portion 340 is formed around the through-hole 330, but the position where the impregnation portion 340 is formed is not limited to this. The impregnation portion 340 of this embodiment can be provided in a location where it is necessary to seal off the vacuum atmosphere and the atmospheric atmosphere.

[0145] Furthermore, by providing the impregnation portion 340, it is possible to adjust the thermal resistance or the electrostatic capacitance in the thermal spray layer 200. The impregnation portion 340 may be formed at a desired position for the purpose of adjusting the thermal resistance or the electrostatic capacitance.

[0146] 14 to 16 are cross-sectional views showing the outline of the configuration of a power supply terminal according to a tenth embodiment. The power supply terminal of this embodiment is a power supply terminal for supplying power to each electrode in the first to ninth embodiments. In the following example, a power supply terminal for supplying power to the heater electrode 202 of the first embodiment will be described.

[0147] A power supply terminal connected to an electrode provided on an electrostatic chuck is required to appropriately supply power to the electrode. In addition, because a difference in linear expansion coefficient occurs between the sintered layer or thermal sprayed layer on which the electrode is provided and the base, the power supply terminal is also required to absorb shear stress generated between the sintered layer or thermal sprayed layer and the base. Therefore, the power supply terminal of this embodiment has both a power supply function and a shear stress absorption function.

[0148] The power supply terminal 400 shown in FIG. 14 is provided inside the first dielectric portion 1111a and connected to the heater electrode 202. The first dielectric portion 1111a is a sintered layer or a sprayed layer. The power supply terminal 400 includes a cylindrical portion 401 and a sprayed portion 402. The cylindrical portion 401 is formed from an insulating material. The sprayed portion 402 is embedded inside the cylindrical portion 401 by spraying a conductive material, for example, a metal such as aluminum, onto the inside of the cylindrical portion 401. The sprayed portion 402 is connected to the heater electrode 202 and to a power supply line (not shown) that communicates with a power source (not shown).

[0149] In such a case, the sprayed portion 402 can appropriately supply power to the heater electrode 202. Furthermore, since the sprayed portion 402 has a porous structure, it can also absorb the shear stress described above, thereby preventing damage to the power supply terminal 400.

[0150] The power supply terminal 410 shown in FIG. 15 is provided inside the first dielectric portion 1111a and connected to the heater electrode 202. The first dielectric portion 1111a is a sintered layer or a sprayed layer. The power supply terminal 410 includes a cylindrical portion 411, a core portion 412, and a sprayed portion 413. The cylindrical portion 411 is formed of an insulating material. The core portion 412 is disposed inside the cylindrical portion 411 and is also formed of an insulating material. The sprayed portion 413 is formed by spraying a conductive material, for example, a metal such as aluminum, around the core portion 412 inside the cylindrical portion 401. The sprayed portion 413 is connected to the heater electrode 202 and to a power supply line (not shown) that communicates with a power source (not shown).

[0151] In such a case, the sprayed portion 413 can appropriately supply power to the heater electrode 202. Furthermore, because the sprayed portion 413 has a porous structure, it can also absorb the shear stress described above, thereby suppressing damage to the power supply terminal 400. For example, if it is difficult to embed the sprayed portion 402 inside the cylindrical portion 401 as shown in Fig. 14 from a manufacturing perspective, the sprayed portion 413 may be provided around the core portion 412 as in this example.

[0152] The power supply terminal 420 shown in FIG. 16 is provided inside the first dielectric portion 1111a and connected to the heater electrode 202. The first dielectric portion 1111a is a sintered layer or a sprayed layer. The power supply terminal 420 includes a cylindrical portion 421, conductor portions 422 and 423, a conductive wire portion 424, and a sprayed portion 425. The cylindrical portion 421 is formed of an insulating material. The conductive portion 422 is formed of a conductive material, such as a metal. The conductive portion 422 is connected to the heater electrode 202 at the upper interior portion of the cylindrical portion 421. The conductive portion 423 is also formed of a conductive material, such as a metal. The conductive portion 423 is provided inside the cylindrical portion 421 and is connected to a power supply line (not shown) that communicates with a power source (not shown). The conductive wire portion 424 is formed of a conductive material and has a twisted wire structure, for example, consisting of multiple metal wires bundled together. The conductive wire portion 424 is connected to the conductive portions 422 and 423. The sprayed portion 425 is formed by spraying a conductive material, for example, a metal such as aluminum, around the conductive portion 422 in the upper interior portion of the cylindrical portion 421. The sprayed portion 425 is connected to the heater electrode 202.

[0153] In this case, power is supplied to the heater electrode 202 via the thermal spray portion 425 as well as the conductor portion 422, so that the power can be supplied appropriately. Furthermore, the shear stress described above is absorbed by the thermal spray portion 425, which has a porous structure, as well as the conductor portion 422. As a result, damage to the power supply terminal 400 can be suppressed.

[0154] As described above, power supply to the heater electrode 202 and shear stress absorption can be appropriately performed in any of the power supply terminals 400, 410, and 420. Moreover, the sprayed portions 402, 413, and 425 for achieving these effects each have the advantage of being manufactured in a short period of time and at low manufacturing costs.

[0155] 11th Embodiment Fig. 17 is a plan view showing an outline of the configuration of an electrostatic chuck of a substrate support part according to an 11th embodiment. Fig. 18 is a cross-sectional view showing an outline of the configuration of a main body part of a substrate support part according to an 11th embodiment. In this embodiment, in the first to tenth embodiments, the power supply terminals connected to the electrodes and the connection terminals provided on the base 1110 and communicating with the power supply terminals are arranged offset from each other in a plan view.

[0156] 17 and 18, for ease of explanation, the structure of the first dielectric portion 1111a in the electrostatic chuck 1111 is not specified, and an example in which a heater electrode 500 is provided inside the first dielectric portion 1111a will be described. The heater pattern of the heater electrode 500 is arbitrary, but may have, for example, a spiral shape in a plan view.

[0157] A power supply terminal 501 for supplying power to the heater electrode 500 is connected to one end of the heater electrode 500 on the central side. The power supply terminal 501 is provided inside the first dielectric portion 1111a. The base 1110 is provided with a connection terminal 502 exposed on the upper surface of the base 1110. The connection terminal 502 is disposed below the first dielectric portion 1111a and offset from the power supply terminal 501 toward the outer periphery in a plan view. The connection terminal 502 is provided by being inserted inside the insulator portion 503 and is electrically insulated from the base 1110.

[0158] A sprayed electrode 504 is provided at the interface between the first dielectric portion 1111a and the base 1110, connecting the lower end of the power supply terminal 501 and the upper end of the connection terminal 502. The sprayed electrode 504 is formed by spraying a conductive material, for example, a metal.

[0159] Here, conventionally, the power supply terminal connected to the heater electrode 500 and the connection terminal provided on the base 1110 have been disposed at the same position in a plan view. That is, the connection terminal has been disposed directly below the power supply terminal, and the power supply terminal and the connection terminal have been connected to each other. In such a case, when the heater pattern of the heater electrode 500 is changed and the position of the power supply terminal is changed, it has been necessary to prepare a base 1110 in which the position of the connection terminal has been changed accordingly. This has resulted in a long manufacturing period for the electrostatic chuck 1111 and high manufacturing costs.

[0160] In this regard, according to this embodiment, even if the heater pattern of the heater electrode 500 is changed and the position of the power supply terminal 501 is changed, there is no need to newly manufacture the base 1110. Therefore, the base 1110 can be used in common for a plurality of electrostatic chucks 1111 while accommodating any heater pattern of the heater electrode 500. Moreover, the sprayed electrode 504 has the advantage of being manufactured in a short period of time and at low manufacturing costs. As a result, the manufacturing period of the entire substrate support 11 can be shortened, and manufacturing costs can be reduced.

[0161] Furthermore, since the first dielectric portion 1111a and the base 1110 are made of different materials and have different linear expansion coefficients, shear stress is generated at the interface between the first dielectric portion 1111a and the base 1110, which may weaken the interface. In this regard, the sprayed electrode 504 has a porous structure and can absorb shear stress, thereby improving the fragility of the interface.

[0162] The sprayed electrode 504 of this embodiment can be applied to any structure of the first dielectric portion 1111a as described above. For example, the first dielectric portion 1111a may include a sprayed layer and a sintered layer as in the first embodiment, or may be composed of only a sintered layer as in the second embodiment.

[0163] In addition, in this embodiment, the electrode to which power is supplied is the heater electrode 500, but this is not limiting. For example, the spray electrode of this embodiment can also be applied when power is supplied to an electrostatic electrode or a bias electrode.

[0164] 19 is a cross-sectional view showing an outline of the configuration of a main body of a substrate support according to a twelfth embodiment. The twelfth embodiment is a modification of the eleventh embodiment.

[0165] In this embodiment, similarly to the eleventh embodiment, the power supply terminal 501 connected to the heater electrode 500 and the connection terminal 502 provided on the base 1110 are arranged offset from each other in a plan view. On the other hand, the connection terminal 502 of this embodiment is arranged further outward than the connection terminal 502 of the eleventh embodiment, and is arranged radially outward from the first dielectric portion 1111a. In other words, the connection terminal 502 is arranged below the second dielectric portion 1111b.

[0166] Here, the connection terminal 502 can become a singular point when adjusting the temperature of the substrate W. In this regard, in the present embodiment, the connection terminal 502 is disposed radially outward of the substrate W supported by the first dielectric portion 1111a, so this singular point is eliminated and the uniformity of the plasma processing within the substrate surface can be improved.

[0167] Moreover, this embodiment can also achieve the same effects as those of the eleventh embodiment. That is, the base 1110 can be made common to correspond to any heater pattern, and the manufacturing period of the substrate support 11 can be shortened, thereby reducing the manufacturing cost.

[0168] 20 is a plan view showing the outline of the configuration of a heater electrode according to a thirteenth embodiment. In this embodiment, a pinhole is formed in the heater electrode of the above-described embodiment.

[0169] The heater electrode 600, which is provided inside the first dielectric portion 1111a and is used to adjust the temperature of the substrate W, is formed by spraying a conductive material, such as a metal, in the same manner as the heater electrode 202 of the first embodiment. This heater electrode 600 corresponds to the sprayed heater electrode of the present disclosure. The heater electrode 600 is trimmed at desired positions to form a plurality of pinholes 601 as through holes.

[0170] In recent years, with the advancement of product generations, there has been an increasing demand for suppressing variations in individual electrostatic chucks. It is also necessary to correct variations in the film thickness of the heater electrode inside the electrostatic chuck. Conventionally, in order to obtain a required amount of heat generation from the heater electrode, the heater electrode is formed with a constant width, and then the resistance value of the heater electrode is adjusted by, for example, removing the outer portion of the heater electrode. However, simply adjusting the width of the heater electrode has sometimes been unable to appropriately control the temperature at any position on the substrate.

[0171] In this regard, in this embodiment, a plurality of pinholes 601 are formed at desired positions on the heater electrode 600. By adjusting the number and arrangement of these pinholes 601, the resistance value at a desired position on the heater electrode 600 can be adjusted. In other words, by distributing and forming the pinholes 601 at a desired portion, precise temperature adjustment becomes possible. Therefore, the temperature of the substrate W can be adjusted to an appropriate temperature, and the uniformity of the plasma processing within the substrate surface can be improved.

[0172] Moreover, since the resistance value of the heater electrode 600 is adjusted by the pinhole 601, rather than by the width of the heater electrode as in the conventional case, the degree of freedom in designing the heater electrode 600 is improved.

[0173] In this embodiment, when manufacturing the first dielectric portion 1111a, the heater electrode 600 is first formed by thermal spraying. Thereafter, the resistance value is measured at any section of the heater electrode 600, and the variation in the heater electrode 600 necessary to ensure in-plane uniformity of the temperature distribution on the substrate W is confirmed in advance. Thereafter, based on the results of confirmation of this variation, the required resistance increase value is calculated, and the number and arrangement of pinholes 601 to be trimmed in the heater electrode 600 are determined. Then, based on the results of determining the number and arrangement, the heater electrode 600 is trimmed to form the pinholes 601.

[0174] 20, the pinhole 601 has a circular shape in a plan view, but the planar shape is not limited to this. For example, it may be triangular or rectangular. However, a simple shape makes it easier to manufacture the heater electrode 600.

[0175] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0176] For example, the main body 111 of the substrate support 11 may be configured by combining any two or more of the first to thirteenth embodiments.

[0177] 11 Substrate support portion 112 Ring assembly 200 Thermal sprayed layer 220 Thermal sprayed layer 1110 Base 1111a First dielectric portion 1111b Second dielectric portion W Substrate

Claims

1. A substrate support comprising: a base; a first dielectric portion disposed on top of the base and on which a substrate is placed; and a second dielectric portion disposed to surround the first dielectric portion and on which an edge ring is placed, wherein at least one of the first dielectric portion and the second dielectric portion is provided with a sprayed layer of an insulating material.

2. The substrate support according to claim 1, wherein the first dielectric portion comprises: a sprayed layer of an insulating material; and a sintered layer of an insulating material disposed on top of the sprayed layer.

3. The substrate support according to claim 2, wherein the first dielectric portion comprises: a heater electrode for adjusting the temperature of the substrate; and an electrostatic electrode for attracting the substrate.

4. The substrate support according to claim 2 or 3, further comprising a bonding layer that bonds the base and the sprayed layer of the first dielectric portion.

5. The substrate support according to claim 1, wherein the first dielectric portion comprises a sintered layer made of an insulating material, the second dielectric portion comprises a sprayed layer made of an insulating material, and the substrate support comprises a bonding layer that bonds the base and the sintered layer of the first dielectric portion.

6. A substrate support according to claim 1, wherein the first dielectric part comprises a sintered layer of an insulating material, the second dielectric part comprises a sprayed layer of an insulating material, the sprayed layer of the second dielectric part is disposed so as to extend to the lower part of the first dielectric part, and the substrate support comprises a bonding layer that bonds the sintered layer of the first dielectric part and the sprayed layer of the second dielectric part.

7. The substrate support according to claim 1, wherein the first dielectric portion comprises: a first sprayed layer of an insulating material; and a sintered layer of an insulating material disposed on top of the first sprayed layer; the second dielectric portion comprises a second sprayed layer of an insulating material; the second sprayed layer of the second dielectric portion is disposed so as to extend to the bottom of the first dielectric portion; and the substrate support comprises a bonding layer that bonds the sprayed layer of the first dielectric portion and the second sprayed layer of the second dielectric portion.

8. A substrate support according to any one of claims 5 to 7, wherein the first dielectric portion comprises a first electrostatic electrode for adsorbing the substrate, and the second dielectric portion comprises a second electrostatic electrode for adsorbing the edge ring.

9. A substrate support as described in claim 1, wherein the first dielectric portion comprises: a first sprayed layer of an insulating material; and a first sintered layer of an insulating material disposed on top of the first sprayed layer; and the second dielectric portion comprises: a second sprayed layer of an insulating material; and a second sintered layer of an insulating material disposed on top of the second sprayed layer.

10. The substrate support according to claim 9, wherein the first thermal sprayed layer of the first dielectric portion includes a plurality of laminated thermal sprayed layers, and the second thermal sprayed layer of the second dielectric portion includes a plurality of laminated thermal sprayed layers.

11. The substrate support according to claim 9 or 10, wherein the first dielectric portion comprises: a first bias electrode to which bias power is supplied; and a first electrostatic electrode for attracting the substrate.

12. The substrate support according to claim 11, wherein the second dielectric portion comprises: a second bias electrode to which bias power is supplied; and a second electrostatic electrode for attracting the edge ring.

13. The substrate support according to claim 9 or 10, wherein the first dielectric portion comprises: a first heater electrode for adjusting the temperature of the substrate; and a first electrostatic electrode for attracting the substrate.

14. The substrate support of claim 13, wherein the second dielectric portion comprises at least one of a second heater electrode for adjusting the temperature of the edge ring and a second electrostatic electrode for attracting the edge ring.

15. The substrate support according to claim 12, wherein the first bias electrode and the second bias electrode are arranged to overlap each other in a plan view.

16. A substrate support according to any one of claims 9 to 14, wherein the first dielectric portion and the base below the first dielectric portion, and the second dielectric portion and the base below the second dielectric portion are arranged at a distance from each other.

17. A substrate support according to any one of claims 9 to 16, comprising: a first bonding layer bonding the base and the first sprayed layer of the first dielectric part; and a second bonding layer bonding the base and the second sprayed layer of the second dielectric part.

18. The substrate support according to claim 1, comprising: a bonding layer that bonds the base and the first dielectric portion; and a sprayed ring made of an insulating material that is disposed so as to cover the outer surface of the bonding layer.

19. The substrate support according to claim 1, wherein the thermal spray layer has an impregnated portion in which a resin is impregnated at a desired position.

20. The substrate support of claim 19, wherein the desired location is around a through hole that penetrates the thermal spray layer.

21. The substrate support according to claim 1, wherein the first dielectric portion comprises an electrode, the substrate support comprises a power supply terminal for supplying power to the electrode, and the power supply terminal is connected to the electrode and comprises a thermally sprayed portion made of a conductive material.

22. The substrate support according to claim 21, wherein the power supply terminal comprises a cylindrical portion made of an insulating material, and the thermally sprayed portion is embedded inside the cylindrical portion.

23. A substrate support as described in claim 21, wherein the power supply terminal comprises: a cylindrical portion made of an insulating material; and a core portion made of an insulating material that is inserted through the interior of the cylindrical portion; and the sprayed portion is arranged around the core portion inside the cylindrical portion.

24. The substrate support according to claim 21, wherein the thermal spray portion is disposed around a conductive portion connected to the electrode.

25. A substrate support as described in claim 1, wherein the first dielectric portion includes an electrode, and the substrate support includes: a power supply terminal for supplying power to the electrode; a connection terminal arranged exposed on the surface of the base; and a sprayed electrode made of a conductive material that connects the power supply terminal and the connection terminal.

26. The substrate support according to claim 25, wherein the connection terminal is disposed radially outward of the first dielectric portion in a plan view.

27. The substrate support according to claim 1, wherein the first dielectric portion is provided with a sprayed heater electrode for adjusting the temperature of the substrate, and the sprayed heater electrode has through holes formed at desired positions.

28. A substrate processing apparatus comprising: a plasma processing chamber; and a substrate support provided inside the plasma processing chamber, wherein the substrate support comprises: a base; a first dielectric portion disposed on top of the base and on which a substrate is placed; and a second dielectric portion disposed surrounding the first dielectric portion and on which an edge ring is placed, wherein at least one of the first dielectric portion and the second dielectric portion is provided with a sprayed layer of an insulating material.

29. The substrate processing apparatus according to claim 28, wherein the first dielectric portion comprises: a sprayed layer of an insulating material; and a sintered layer of an insulating material disposed on top of the sprayed layer.

30. The substrate processing apparatus according to claim 29, further comprising a bonding layer that bonds the base and the thermally sprayed layer of the first dielectric portion.

31. The substrate processing apparatus according to claim 28, wherein the first dielectric portion comprises a sintered layer made of an insulating material, the second dielectric portion comprises a sprayed layer made of an insulating material, and the substrate support comprises a bonding layer that bonds the base and the sintered layer of the first dielectric portion.

32. The substrate processing apparatus of claim 28, wherein the first dielectric portion comprises a sintered layer of an insulating material, the second dielectric portion comprises a sprayed layer of an insulating material, the sprayed layer of the second dielectric portion is disposed so as to extend to the lower portion of the first dielectric portion, and the substrate support comprises a bonding layer that bonds the sintered layer of the first dielectric portion and the sprayed layer of the second dielectric portion.

33. The substrate processing apparatus of claim 28, wherein the first dielectric portion comprises: a first sprayed layer of an insulating material; and a sintered layer of an insulating material disposed on top of the first sprayed layer; the second dielectric portion comprises a second sprayed layer of an insulating material; the second sprayed layer of the second dielectric portion is disposed so as to extend to the bottom of the first dielectric portion; and the substrate support comprises a bonding layer that bonds the sprayed layer of the first dielectric portion and the second sprayed layer of the second dielectric portion.

34. The substrate processing apparatus of claim 28, wherein the first dielectric portion comprises: a first sprayed layer of an insulating material; and a first sintered layer of an insulating material disposed on top of the first sprayed layer; and the second dielectric portion comprises: a second sprayed layer of an insulating material; and a second sintered layer of an insulating material disposed on top of the second sprayed layer.

35. The substrate processing apparatus according to claim 34, wherein the first thermal sprayed layer of the first dielectric portion includes a plurality of laminated thermal sprayed layers, and the second thermal sprayed layer of the second dielectric portion includes a plurality of laminated thermal sprayed layers.

36. A substrate processing apparatus according to claim 34 or 35, wherein the first dielectric portion and the base below the first dielectric portion, and the second dielectric portion and the base below the second dielectric portion are arranged at a distance from each other.

37. The substrate processing apparatus according to any one of claims 34 to 36, comprising: a first bonding layer bonding the base and the first sprayed layer of the first dielectric part; and a second bonding layer bonding the base and the second sprayed layer of the second dielectric part.