Semiconductor device

Abstract

This semiconductor device comprises a plurality of first switch units, a first control element, at least one lead, a plurality of first connection members, and a plurality of second connection members. Each of the first switch units includes a first switching element and a second switching element. In the plurality of first switch units, the first switching elements and the second switching elements are electrically connected in parallel to each other, and are of different types. The first switching element and the second switching element of each of the first switch units are disposed to surround the first control element when viewed in a thickness direction.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices including switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. For example, Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device described in Patent Document 1 is an intelligent power module (hereinafter referred to as "IPM") used for driving and controlling a motor, for example. The semiconductor device includes a power semiconductor chip as the switching element. The power semiconductor chip is an IGBT, a MOSFET, or the like.

[0003] Japanese Patent Application Laid-Open No. 2020-4893

[0004] In semiconductor devices, one switching element may be connected in parallel to other switching elements, and these switching elements may be operated as a single switch unit. For example, multiple switching elements may be connected in parallel and switched for purposes such as ensuring the allowable current of the semiconductor device, suppressing the voltage and current input to the switching elements, or suppressing power loss. However, the semiconductor device described in Patent Document 1 still has room for improvement when connecting each switching element to other switching elements in parallel.

[0005] An object of the present disclosure is to provide a semiconductor device that is improved over conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device having a more preferable structure in a configuration in which multiple switching elements connected in parallel with each other operate as a single switch unit.

[0006] A semiconductor device according to a first aspect of the present disclosure includes a plurality of first switch units, each having a first switching element and a second switching element; a first control element that inputs a first drive signal to the first switching element and the second switching element of each of the plurality of first switch units; at least one lead on which the first switching element and the second switching element of each of the plurality of first switch units are mounted; a plurality of first connection members respectively joined to the first control element and the first switching element of each of the plurality of first switch units; and a plurality of second connection members respectively joined to the first control element and the second switching element of each of the plurality of first switch units. In the plurality of first switch units, the first switching element and the second switching element are electrically connected in parallel to each other and are of different types. The first switching element and the second switching element of each of the plurality of first switch units are arranged to surround the first control element when viewed in the thickness direction.

[0007] According to the above configuration, in the semiconductor device, it is possible to make the structure for operating a plurality of switching elements connected in parallel to one another as one switch section more preferable.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment. FIG. 3 is a view showing a sealing member in the plan view of FIG. 2, with an imaginary line. FIG. 4 is a partial enlarged view of a part of FIG. 3. FIG. 5 is a partial enlarged view of a part of FIG. 3. FIG. 6 is a front view showing the semiconductor device according to the first embodiment. FIG. 7 is a side view (right side view) showing the semiconductor device according to the first embodiment. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line XX in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a diagram showing an example of a circuit configuration of the semiconductor device according to the first embodiment. FIG. 13 is a plan view showing a semiconductor device according to a first modification of the first embodiment, with an imaginary line showing the sealing member. FIG. 14 is a plan view showing a semiconductor device according to a second modified example of the first embodiment, with the sealing member indicated by imaginary lines. FIG. 15 is an enlarged plan view of a main portion of a semiconductor device according to a third modified example of the first embodiment. FIG. 16 is an enlarged plan view of a main portion of a semiconductor device according to a fourth modified example of the first embodiment. FIG. 17 is an enlarged plan view of a main portion of a semiconductor device according to a fifth modified example of the first embodiment. FIG. 18 is an enlarged plan view of a main portion of a semiconductor device according to a sixth modified example of the first embodiment. FIG. 19 is an enlarged plan view of a main portion of a semiconductor device according to a seventh modified example of the first embodiment. FIG. 20 is an enlarged plan view of a main portion of a semiconductor device according to an eighth modified example of the first embodiment. FIG. 21 is an enlarged plan view of a main portion of a semiconductor device according to an eighth modified example of the first embodiment. FIG. 22 is a plan view showing a semiconductor device according to the second embodiment, with the sealing member indicated by imaginary lines. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22. FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 22. Fig. 25 is a plan view showing a semiconductor device according to a third embodiment, in which a sealing member is shown by an imaginary line. Fig. 26 is a partial enlarged view of a part of Fig. 25. Fig. 27 is a partial enlarged view of a part of Fig. 25. Fig. 28 is a plan view showing a semiconductor device according to a fourth embodiment, in which a sealing member is shown by an imaginary line. Fig. 29 is a partial enlarged view of a part of Fig. 28.Fig. 30 is a partially enlarged view of a part of Fig. 28. Fig. 31 is a diagram showing an example of a circuit configuration of a semiconductor device according to a fourth embodiment.

[0009] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar components will be designated by the same reference numerals, and redundant description will be omitted. Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to assign any order to their objects.

[0010] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an) object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an) object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on (an) object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an) object B" includes "a certain object A is in contact with a certain object B and is located on (an) object B" and "a certain object A is located on (an) object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "when viewed from a certain direction, an object A overlaps an object B" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B."

[0011] 1 to 12 show a semiconductor device A1 according to a first embodiment. The semiconductor device A1 includes a plurality of first switch sections 1, a plurality of second switch sections 2, a plurality of leads 3A to 3G, 3Z, a plurality of leads 4A to 4H, 4J to 4N, 4P to 4R, a support substrate 51, a plurality of connecting members 6, a sealing member 7, a first control element 8A, a second control element 8B, and a plurality of electronic components 89U, 89V, 89W. The plurality of connecting members 6 include a plurality of wires 6A to 6H, 6J to 6L, 6Q. The semiconductor device A1 may be used, for example, as an IPM (Integrated Power Module) for driving and controlling a motor, without any particular limitations.

[0012] For convenience of explanation, three mutually orthogonal directions, the x direction, the y direction, and the z direction, will be referred to. The z direction is the thickness direction of the semiconductor device A1. In the following explanation, one side of the z direction may be referred to as "upper" and the other as "lower." Note that terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component in the z direction and do not necessarily define the relationship with the direction of gravity. Furthermore, "plan view" refers to the view from the z direction. The x direction is the left-right direction in the plan view of the semiconductor device A1 (see FIGS. 2 and 3). The y direction is the up-down direction in the plan view of the semiconductor device A1 (see FIGS. 2 and 3). In this embodiment, the x direction is an example of a "first direction," and the y direction is an example of a "second direction."

[0013] The plurality of first switch sections 1 and the plurality of second switch sections 2 are elements that perform the electrical functions of the semiconductor device A1. In the semiconductor device A1, as shown in Fig. 12, the plurality of first switch sections 1 and the plurality of second switch sections 2 form a three-phase AC inverter circuit.

[0014] 3, 4, and 12, the plurality of first switch units 1 include a first arm 1A, a second arm 1B, and a third arm 1C. As shown in Fig. 4, the first arm 1A, the second arm 1B, and the third arm 1C are arranged along the x direction. The second arm 1B is located between the first arm 1A and the third arm 1C in the x direction. Each of the plurality of first switch units 1 (first arm 1A, second arm 1B, and third arm 1C) switches between an ON state and an OFF state in response to a first drive signal from a first control element 8A.

[0015] Each of the multiple first switch units 1 (first arm 1A, second arm 1B, and third arm 1C) has a first switching element 11, a second switching element 12, and a first protection element 13. For ease of explanation, the first switching elements 11 of the first arm 1A, second arm 1B, and third arm 1C will be referred to as the first switching element 11A, first switching element 11B, and first switching element 11C, respectively. Furthermore, the second switching elements 12 of the first arm 1A, second arm 1B, and third arm 1C will be referred to as the second switching element 12A, second switching element 12B, and second switching element 12C, respectively. The first protection elements 13 of the first arm 1A, second arm 1B, and third arm 1C will be referred to as the first protection element 13A, first protection element 13B, and first protection element 13C, respectively. The first switching element 11, the second switching element 12, and the first protection element 13 described below are common to each first switch section 1 (each of the first arm 1A, the second arm 1B, and the third arm 1C) unless otherwise specified.

[0016] The first switching element 11 and the second switching element 12 are each a power semiconductor element. The first switching element 11 and the second switching element 12 are, for example, an IGBT, a bipolar transistor, a MOSFET, or a HEMT (High Electron Mobility Transistor). The first switching element 11 and the second switching element 12 are different types. In this disclosure, the types of switching elements are classified according to their structural differences, such as an IGBT, a bipolar transistor, a MOSFET, or a HEMT. As shown in FIG. 12 , in the semiconductor device A1, the first switching element 11 is an IGBT, and the second switching element 12 is a MOSFET. The first switching element 11 and the second switching element 12 are each configured to include a semiconductor material. Examples of the semiconductor material include silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), and gallium nitride (GaN). In the semiconductor device A1, the first switching element 11 contains Si as a semiconductor material, and the second switching element 12 contains SiC as a semiconductor material.

[0017] 8 and 9 , the first switching element 11 has a main surface 11a and a back surface 11b. The main surface 11a and the back surface 11b are spaced apart in the z direction. The main surface 11a faces upward in the z direction (toward the z1 side in the z direction), and the back surface 11b faces downward in the z direction (toward the z2 side in the z direction). The main surface 11a and the back surface 11b are both flat (including cases where they are approximately flat).

[0018] The first switching element 11 has three electrodes 111, 112, and 113. The electrode 111 is provided on the back surface 11b of the element, and the electrodes 112 and 113 are provided on the main surface 11a of the element. In an example in which the first switching element 11 is an IGBT, the electrode 111 is a collector, the electrode 112 is an emitter, and the electrode 113 is a gate. The first switching element 11 performs a switching operation in response to a drive signal (first drive signal) input to the electrode 113. The switching operation is an operation in which the first switching element 11 switches between an ON state in which a current flows between the two electrodes 111 and 112, and an OFF state in which no current flows between the two electrodes 111 and 112. When the first switching element 11 is in the ON state, a forward current flows from the electrode 111 to the electrode 112.

[0019] 8 and 9 , the second switching element 12 has an element main surface 12a and an element back surface 12b. The element main surface 12a and the element back surface 12b are spaced apart in the z direction. The element main surface 12a faces upward in the z direction (toward the z1 side in the z direction), and the element back surface 12b faces downward in the z direction (toward the z2 side in the z direction). The element main surface 12a and the element back surface 12b are each flat (including the case where they are approximately flat).

[0020] The second switching element 12 has three electrodes 121, 122, and 123. The electrode 121 is provided on the back surface 12b of the element, and the electrodes 122 and 123 are provided on the main surface 12a of the element. In an example in which the second switching element 12 is a MOSFET, the electrode 121 is the drain, the electrode 122 is the source, and the electrode 123 is the gate. The second switching element 12 performs a switching operation in response to a drive signal (first drive signal) input to the electrode 123. The switching operation is an operation in which the second switching element 12 switches between an ON state in which a current flows between the two electrodes 121 and 122, and an OFF state in which no current flows between the two electrodes 121 and 122. When the second switching element 12 is in the ON state, a forward current flows from the electrode 121 to the electrode 122.

[0021] In each first switch section 1 (first arm 1A, second arm 1B, and third arm 1C), the first switching element 11 and the second switching element 12 are electrically connected in parallel. Specifically, the electrode 111 (collector) and the electrode 121 (drain) are electrically connected, and the electrode 112 (emitter) and the electrode 122 (source) are electrically connected.

[0022] The first protection element 13 includes a diode function portion that functions as a freewheeling diode. In this embodiment, the first protection element 13 is, for example, a Schottky barrier diode, but may be another type of diode.

[0023] 9 , the first protection element 13 has an element principal surface 13a and an element rear surface 13b. The element principal surface 13a and the element rear surface 13b are spaced apart in the z direction. The element principal surface 13a faces upward in the z direction (the z1 side in the z direction), and the element rear surface 13b faces downward in the z direction (the z2 side in the z direction). The element principal surface 13a and the element rear surface 13b are each flat (including the case where they are approximately flat).

[0024] 9, the first protection element 13 includes two electrodes 131 and 132. The electrode 131 is formed on the element main surface 13a, and the electrode 132 is formed on the element back surface 13b. In an example in which the first protection element 13 is a diode, the electrode 131 is an anode and the electrode 132 is a cathode.

[0025] In each first switch section 1 (each of the first arm 1A, the second arm 1B, and the third arm 1C), the first protection element 13 is connected in anti-parallel to the first switching element 11 and the second switching element 12. Anti-parallel connection refers to a state in which the first switching element 11 and the second switching element 12 are connected in parallel so that the forward currents of the first switching element 11 and the second switching element 12 are opposite to the forward current of the first protection element 13. The electrode 131 (anode) of the first protection element 13 is connected to the electrode 112 (emitter) of the first switching element 11 and the electrode 122 (source) of the second switching element 12, and the electrode 132 (cathode) of the first protection element 13 is connected to the electrode 111 (collector) of the first switching element 11 and the electrode 121 (drain) of the second switching element 12. As a result, in each first switch section 1, when a reverse voltage is applied to the first switching element 11 and the second switching element 12, a forward current flows through the first protection element 13, and the reverse voltage applied to the first switching element 11 and the second switching element 12 is reduced.

[0026] 8 and 9 , the first switching element 11A, the second switching element 12A, and the first protective element 13A are each bonded to a lead 3B via a conductive bonding material 19. The first switching element 11B, the second switching element 12B, and the first protective element 13B are each bonded to a lead 3C via a conductive bonding material 19. The first switching element 11C, the second switching element 12C, and the first protective element 13C are each bonded to a lead 3D via a conductive bonding material 19. These conductive bonding materials 19 are, for example, solder, a metal paste material, or a sintered metal.

[0027] As shown in FIG. 4 , the first switching element 11A, the second switching element 12A, and the first protection element 13A are aligned in the y direction. The first switching element 11B and the second switching element 12B are aligned in the x direction. The first protection element 13B is located on the y2 side of the second switching element 12B in the y direction, and the second switching element 12B and the first protection element 13B are aligned in the y direction. The first switching element 11C, the second switching element 12C, and the first protection element 13C are aligned in the y direction. As shown in FIG. 4 , the multiple first switching elements 11A, 11B, and 11C and the multiple second switching elements 12A, 12B, and 12C are arranged to surround the first control element 8A in a plan view (arranged around the first control element 8A). Note that in each first switch unit 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the positions of the first switching element 11 and the second switching element 12 may be reversed.

[0028] The plurality of second switch units 2 include a fourth arm 2A, a fifth arm 2B, and a sixth arm 2C. As shown in FIG. 5 , the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C are arranged along the x direction. The fifth arm 2B is located between the fourth arm 2A and the sixth arm 2C in the x direction. Each of the plurality of second switch units 2 (the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C) switches between an ON state and an OFF state in response to a second drive signal from the second control element 8B.

[0029] Each of the second switch units 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C) includes a third switching element 21, a fourth switching element 22, and a second protection element 23. For ease of explanation, the first switching elements 11 of the fourth arm 2A, fifth arm 2B, and sixth arm 2C are referred to as the third switching element 21A, third switching element 21B, and third switching element 21C, respectively. The fourth switching elements 22 of the fourth arm 2A, fifth arm 2B, and sixth arm 2C are referred to as the fourth switching element 22A, fourth switching element 22B, and fourth switching element 22C, respectively, and the second protection elements 23 of the fourth arm 2A, fifth arm 2B, and sixth arm 2C are referred to as the second protection element 23A, second protection element 23B, and second protection element 23C, respectively. This will be described below. Unless otherwise specified, the third switching element 21, the fourth switching element 22, and the second protection element 23 are common to each second switch section 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C).

[0030] The third switching element 21 and the fourth switching element 22 are each a power semiconductor element, similar to the first switching element 11 and the second switching element 12. The third switching element 21 and the fourth switching element 22 are, for example, an IGBT, a bipolar transistor, a MOSFET, or a HEMT. The third switching element 21 and the fourth switching element 22 are different types. As shown in FIG. 12 , in the semiconductor device A1, the third switching element 21 is an IGBT, and the fourth switching element 22 is a MOSFET. The third switching element 21 and the fourth switching element 22 are each configured to include a semiconductor material. Examples of the semiconductor material that may be used include SiC (silicon carbide), Si (silicon), GaAs (gallium arsenide), or GaN (gallium nitride). In the semiconductor device A1, the third switching element 21 includes Si as a semiconductor material, and the fourth switching element 22 includes SiC as a semiconductor material.

[0031] 11 , the third switching element 21 has a main surface 21a and a back surface 21b. The main surface 21a and the back surface 21b are spaced apart in the z direction. The main surface 21a faces upward in the z direction (toward the z1 side in the z direction), and the back surface 21b faces downward in the z direction (toward the z2 side in the z direction). The main surface 21a and the back surface 21b are each flat (including the case where they are approximately flat).

[0032] The third switching element 21 has three electrodes 211, 212, and 213. The electrode 211 is provided on the back surface 21b of the element, and the electrodes 212 and 213 are provided on the main surface 21a of the element. In an example in which the third switching element 21 is an IGBT, the electrode 211 is a collector, the electrode 212 is an emitter, and the electrode 213 is a gate. The third switching element 21 performs a switching operation in response to a drive signal (second drive signal) input to the electrode 213. The switching operation is an operation in which the third switching element 21 switches between an ON state in which a current flows between the two electrodes 211 and 212, and an OFF state in which no current flows between the two electrodes 211 and 212. When the third switching element 21 is in the ON state, a forward current flows from the electrode 211 to the electrode 212.

[0033] 11 , the fourth switching element 22 has a main surface 22 a and a back surface 22 b. The main surface 22 a and the back surface 22 b are spaced apart in the z direction. The main surface 22 a faces upward in the z direction (toward the z1 side in the z direction), and the back surface 22 b faces downward in the z direction (toward the z2 side in the z direction). The main surface 22 a and the back surface 22 b are each flat (including the case where they are approximately flat).

[0034] The fourth switching element 22 has three electrodes 221, 222, and 223. The electrode 221 is provided on the back surface 22b of the element, and the electrodes 222 and 223 are provided on the main surface 22a of the element. In an example in which the fourth switching element 22 is a MOSFET, the electrode 221 is a drain, the electrode 222 is a source, and the electrode 223 is a gate. The fourth switching element 22 performs a switching operation in response to a drive signal (second drive signal) input to the electrode 223. The switching operation is an operation in which the fourth switching element 22 switches between an ON state in which a current flows between the two electrodes 221 and 222, and an OFF state in which no current flows between the two electrodes 221 and 222. When the fourth switching element 22 is in the ON state, a forward current flows from the electrode 221 to the electrode 222.

[0035] In each second switch section 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C), the third switching element 21 and the fourth switching element 22 are electrically connected in parallel. Specifically, the electrode 211 (collector) and the electrode 221 (drain) are electrically connected, and the electrode 212 (emitter) and the electrode 222 (source) are electrically connected.

[0036] The second protection element 23 includes a diode functioning portion that functions as a freewheeling diode. In this embodiment, the second protection element 23 is, for example, a Schottky barrier diode.

[0037] 11 , the second protection element 23 has an element principal surface 23 a and an element rear surface 23 b. The element principal surface 23 a and the element rear surface 23 b are spaced apart in the z direction. The element principal surface 23 a faces upward in the z direction (the z1 side in the z direction), and the element rear surface 23 b faces downward in the z direction (the z2 side in the z direction). The element principal surface 23 a and the element rear surface 23 b are each flat (including the case where they are approximately flat).

[0038] 11 , the second protection element 23 includes two electrodes 231 and 232. The electrode 231 is formed on the element main surface 23 a, and the electrode 232 is formed on the element rear surface 23 b. In an example in which the second protection element 23 is a diode, the electrode 231 is an anode and the electrode 232 is a cathode.

[0039] In each second switch section 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C), the second protection element 23 is connected in anti-parallel to the third switching element 21 and the fourth switching element 22. Anti-parallel connection refers to a state in which the third switching element 21 and the fourth switching element 22 are connected in parallel so that the forward currents of the third switching element 21 and the fourth switching element 22 are opposite to the forward current of the second protection element 23. The electrode 231 (anode) of the second protection element 23 is connected to the electrode 212 (emitter) of the third switching element 21 and the electrode 222 (source) of the fourth switching element 22, and the electrode 232 (cathode) of the second protection element 23 is connected to the electrode 211 (collector) of the third switching element 21 and the electrode 221 (drain) of the fourth switching element 22. As a result, in each second switch section 2, when a reverse voltage is applied to the third switching element 21 and the fourth switching element 22, a forward current flows through the second protection element 23, and the reverse voltage applied to the third switching element 21 and the fourth switching element 22 is reduced.

[0040] 8 and 11 , the third switching element 21A, the fourth switching element 22A, and the second protective element 23A are each bonded to the lead 3A via a conductive bonding material 29. The third switching element 21B, the fourth switching element 22B, and the second protective element 23B are also each bonded to the lead 3A via a conductive bonding material 29. The third switching element 21C, the fourth switching element 22C, and the second protective element 23C are also each bonded to the lead 3A via a conductive bonding material 29. These conductive bonding materials 29 are, for example, solder, a metal paste material, or a sintered metal.

[0041] As shown in FIG. 5 , the third switching element 21A, the fourth switching element 22A, and the second protection element 23A are aligned in the y direction. The third switching element 21B and the fourth switching element 22B are aligned in the x direction. The second protection element 23B is located on the y2 side of the fourth switching element 22B in the y direction, and the fourth switching element 22B and the second protection element 23B are aligned in the y direction. The third switching element 21C, the fourth switching element 22C, and the second protection element 23C are aligned in the y direction. As shown in FIG. 5 , the multiple third switching elements 21A, 21B, and 21C and the multiple fourth switching elements 22A, 22B, and 22C are arranged to surround the second control element 8B in a plan view. Note that in each second switch unit 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C), the positions of the third switching element 21 and the fourth switching element 22 may be reversed.

[0042] 12, a three-phase AC inverter circuit configured by a plurality of first switch units 1 and a plurality of second switch units 2 has a first phase 10U, a second phase 10V, and a third phase 10W. The first phase 10U, the second phase 10V, and the third phase 10W are the U phase, the V phase, and the W phase, respectively.

[0043] The first phase 10U includes a first arm 1A and a fourth arm 2A. In the first phase 10U, the first arm 1A and the fourth arm 2A are electrically connected in series. The first arm 1A is the lower arm of the first phase 10U, and the fourth arm 2A is the upper arm of the first phase 10U.

[0044] The second phase 10V includes a second arm 1B and a fifth arm 2B. In the second phase 10V, the second arm 1B and the fifth arm 2B are electrically connected in series. The second arm 1B is the lower arm of the second phase 10V, and the fifth arm 2B is the upper arm of the second phase 10V.

[0045] The third phase 10W includes a third arm 1C and a sixth arm 2C. In the third phase 10W, the third arm 1C and the sixth arm 2C are electrically connected in series. The third arm 1C is the lower arm of the third phase 10W, and the sixth arm 2C is the upper arm of the third phase 10W.

[0046] The first control element 8A controls the switching operations of the multiple first switching elements 11 and the multiple second switching elements 12, and is, for example, a driver IC. The first control element 8A receives a first input signal from the outside and generates a first drive signal for controlling the switching operations of each first switch section 1 based on the first input signal. The first control element 8A outputs a first drive signal (for example, a gate voltage) to the electrode 113 (gate) of each first switching element 11 and the electrode 123 (gate) of each second switching element 12. This controls the switching operations of each first switching element 11 and each second switching element 12. In this embodiment, the first control element 8A has a rectangular shape with the x-direction as the longitudinal direction in a plan view.

[0047] In this embodiment, the first control element 8A provides a delay time between the first drive signal input to the first switching element 11 and the first drive signal input to the second switching element 12 for each of the first switch sections 1 (the first arm 1A, the second arm 1B, and the third arm 1C). The delay time is changed as appropriate depending on, for example, the switching speed of the first switching element 11 and the switching speed of the second switching element 12. In an example where the first switching element 11 is an IGBT and the second switching element 12 is a MOSFET, the first drive signal input to the second switching element 12 switches from an ON signal to an OFF signal and from an OFF signal to an ON signal earlier than the first drive signal input to the first switching element 11. Note that the first control element 8A does not necessarily need to provide a delay time between the first drive signal input to the first switching element 11 and the first drive signal input to the second switching element 12.

[0048] The second control element 8B controls the switching operations of the plurality of third switching elements 21 and the plurality of fourth switching elements 22, and is, for example, a driver IC. The second control element 8B receives a second input signal from the outside and generates a second drive signal for controlling the switching operations of each second switch section 2 based on the second input signal. The second control element 8B outputs a second drive signal (for example, a gate voltage) to the electrode 213 (gate) of each third switching element 21 and the electrode 223 (gate) of each fourth switching element 22. This controls the switching operations of each third switching element 21 and each fourth switching element 22. In this embodiment, the second control element 8B has a rectangular shape with the x-direction as the longitudinal direction in a plan view.

[0049] In this embodiment, the second control element 8B provides a delay time between the second drive signal input to the third switching element 21 and the second drive signal input to the fourth switching element 22 for each second switch unit 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C). The delay time is changed as appropriate depending on, for example, the switching speed of the third switching element 21 and the switching speed of the fourth switching element 22. In an example where the third switching element 21 is an IGBT and the fourth switching element 22 is a MOSFET, the second drive signal to the fourth switching element 22 switches from an ON signal to an OFF signal and from an OFF signal to an ON signal earlier than the second drive signal to the third switching element 21. Note that the second control element 8B does not necessarily need to provide a delay time between the second drive signal input to the third switching element 21 and the second drive signal input to the fourth switching element 22.

[0050] The first control element 8A and the second control element 8B each have a plurality of electrodes 81, 82. The plurality of electrodes 81, 82 are disposed on the upper surface of each of the first control element 8A and the second control element 8B. The plurality of electrodes 81 of the first control element 8A are electrically connected to any of the plurality of first switch sections 1 (first arm 1A, second arm 1B, and third arm 1C). The plurality of electrodes 81 of the first control element 8A outputs the first drive signal described above. The plurality of electrodes 82 of the first control element 8A are electrically connected to any of the leads 4A to 4H. The plurality of electrodes 81 of the second control element 8B are electrically connected to any of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C). The electrode 81 of the second control element 8B outputs the second drive signal described above. The plurality of electrodes 82 of the second control element 8B are electrically connected to any of the leads 4J to 4N, 4Q, and 4R. Furthermore, the second control element 8B has a plurality of electrodes 83. The plurality of electrodes 83 are arranged on the upper surface of the second control element 8B. Each of the plurality of electrodes 83 is electrically connected to a corresponding one of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C). A detection signal for detecting the conductive state of each first switch section 1 is input to the plurality of electrodes 83.

[0051] The first control element 8A is bonded to lead 4R via a bonding material 85, and the second control element 8B is bonded to lead 4H via a bonding material 85, as shown in FIG. 10 . In semiconductor device A1, no electrodes are formed on the bottom surfaces (surfaces facing the z2 side in the z direction) of the first control element 8A and the second control element 8B, and therefore the bonding material 85 may be conductive or insulating. Note that if electrodes are formed on the bottom surfaces of the first control element 8A and the second control element 8B, a conductive material (such as solder, a metal paste material, or a sintered metal) is used for the bonding material 85.

[0052] The plurality of electronic components 89U, 89V, and 89W are elements, such as diodes, that assist the functions of the first control element 8A and the second control element 8B. In the example shown in FIG. 3 , three electronic components 89U, 89V, and 89W are provided, but the number of electronic components is not limited to this. As shown in FIG. 3 , each of the plurality of electronic components 89U, 89V, and 89W is bonded to a corresponding one of the plurality of leads 4A, 4B, and 4C. As shown in FIG. 11 , each of the plurality of electronic components 89U, 89V, and 89W is bonded by a conductive bonding material 891. The conductive bonding material 891 may be, for example, solder, a metal paste, or a sintered metal.

[0053] As shown in FIG. 3 and other figures, the leads 3A-3G, 3Z and the leads 4A-4H, 4J-4N, 4P-4R support any of the first switching elements 11, the second switching elements 12, the first protection elements 13, the third switching elements 21, the fourth switching elements 22, the second protection elements 23, the first control element 8A, the second control element 8B, and the electronic components 89U, 89V, 89W, and provide electrical paths to these elements. Among the leads 3A-3G, 3Z and the leads 4A-4H, 4J-4N, 4P-4R, lead 4H and lead 4R are integrally formed, while the remaining leads are spaced apart. The auxiliary line L1 in FIG. 3 indicates the boundary between lead 4H and lead 4R, indicating the integrally connected portion. Note that lead 4H and lead 4R may also be considered a single lead. Unlike this example, lead 4H and lead 4R may also be spaced apart.

[0054] The leads 3A to 3G, 3Z and the leads 4A to 4H, 4J to 4N, 4P to 4R may be formed from different conductive materials or from a single conductive material. The leads 3A to 3G, 3Z and the leads 4A to 4H, 4J to 4N, 4P to 4R are made of, for example, Cu or a Cu alloy. The materials constituting the leads 3A to 3G, 3Z and the leads 4A to 4H, 4J to 4N, 4P to 4R may not be Cu or a Cu alloy, but may be Ni or a Ni alloy, or a 42 alloy, for example. The materials constituting the leads 3A to 3G, 3Z and the leads 4A to 4H, 4J to 4N, 4P to 4R may be the same or different.

[0055] When the semiconductor device A1 is configured as an IPM, a motor drive current flows through the leads 3A-3G, and a control current flows through the leads 4A-4H, 4J-4N, and 4P-4R. Therefore, a higher voltage is applied to the leads 3A-3G than to the leads 4A-4H, 4J-4N, and 4P-4R, and a larger current flows through the leads 3A-3G. As shown in FIG. 3 , in this embodiment, the high-voltage leads 3A-3G and 3Z and the low-voltage leads 4A-4H, 4J-4N, and 4P-4R are arranged on opposite sides of each other in the y direction.

[0056] The third switching element 21, the fourth switching element 22, and the second protection element 23 of each of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C) are mounted on the lead 3A. As will be understood from the configuration described later, the lead 3A is electrically connected to an electrode 211 (collector) of each third switching element 21, an electrode 221 (drain) of each fourth switching element 22, and an electrode 232 (cathode) of each second protection element 23. As shown in FIGS. 3 and 5 , the lead 3A includes a plurality of mounting portions 311A, 312A, 313A, a terminal portion 32A, a pad portion 33A, and a connecting portion 34A.

[0057] As shown in Fig. 3, the plurality of mounting portions 311A, 312A, and 313A are each covered with a sealing member 7. The plurality of mounting portions 311A, 312A, and 313A are integrally formed. The plurality of mounting portions 311A, 312A, and 313A are each bonded to the support substrate 51 via a bonding material 39. The bonding material 39 may be conductive or insulating. The bonding material 39 preferably has excellent thermal conductivity.

[0058] 5 , the third switching element 21A, the fourth switching element 22A, and the second protective element 23A are mounted on the mounting portion 311A. The mounting portion 311A ​​is electrically connected to the electrode 211 (collector) of the third switching element 21A and the electrode 221 (drain) of the fourth switching element 22A, and is also electrically connected to the electrode 232 (cathode) of the second protective element 23A. In other words, the electrode 211 of the third switching element 21A, the electrode 221 of the fourth switching element 22A, and the electrode 232 of the second protective element 23A are electrically connected to one another via the mounting portion 311A.

[0059] 5 , the third switching element 21B, the fourth switching element 22B, and the second protective element 23B are mounted on the mounting portion 312A. The mounting portion 312A is electrically connected to the electrode 211 (collector) of the third switching element 21B and the electrode 221 (drain) of the fourth switching element 22B, and is also electrically connected to the electrode 232 (cathode) of the second protective element 23B. In other words, the electrode 211 of the third switching element 21B, the electrode 221 of the fourth switching element 22B, and the electrode 232 of the second protective element 23B are electrically connected to one another via the mounting portion 312A.

[0060] 5 , the third switching element 21C, the fourth switching element 22C, and the second protective element 23C are mounted on the mounting portion 313A. The mounting portion 313A is electrically connected to the electrode 211 (collector) of the third switching element 21C and the electrode 221 (drain) of the fourth switching element 22C, and is also electrically connected to the electrode 232 (cathode) of the second protective element 23C. In other words, the electrode 211 of the third switching element 21C, the electrode 221 of the fourth switching element 22C, and the electrode 232 of the second protective element 23C are electrically connected to one another via the mounting portion 313A.

[0061] As shown in FIG. 5 , the following relationship exists among the multiple mounting portions 311A, 312A, and 313A. An edge 304 on the y1 side in the y direction of the mounting portion 311A ​​and an edge 306 on the y1 side in the y direction of the mounting portion 313A are at the same (or approximately the same) position in the y direction. An edge 305 on the y1 side in the y direction of the mounting portion 312A is located on the y2 side in the y direction relative to the aforementioned edges 304 and 306. As a result, as shown in FIG. 5 , the mounting portion 312A is disposed so as to be recessed relative to the two mounting portions 311A ​​and 313A in a plan view, and the multiple mounting portions 311A, 312A, and 313A are formed as a whole in a U-shape in a plan view.

[0062] As shown in FIG. 3, the terminal portion 32A is a portion of the lead 3A that protrudes from the sealing member 7. The terminal portion 32A protrudes from the mounting portions 311A, 312A, and 313A on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32A is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32A is bent toward the z1 side in the z direction to form an L-shape.

[0063] The pad portion 33A and the connecting portion 34A are covered with the sealing member 7. As shown in Fig. 3, the pad portion 33A and the connecting portion 34A are interposed between the mounting portion 312A and the terminal portion 32A. The pad portion 33A is located on the z1 side of the mounting portion 312A in the z direction, and is connected to the terminal portion 32A. As shown in Fig. 10, the connecting portion 34A is connected to the mounting portion 311A ​​and the pad portion 33A, and is inclined with respect to the y direction.

[0064] 3, lead 3B, lead 3C, and lead 3D are arranged on the x2 side in the x direction with respect to lead 3A. Lead 3B, lead 3C, and lead 3D are aligned in the x direction. In the illustrated example, lead 3B and lead 3D have the same (or approximately the same) shape and the same (or approximately the same) size.

[0065] The first arm 1A is mounted on the lead 3B. That is, the first switching element 11A, the second switching element 12A, and the first protection element 13A are each mounted on the lead 3B. As will be understood from the configuration described in detail later, the lead 3B is electrically connected to the electrode 111 (collector) of the first switching element 11A, the electrode 121 (drain) of the second switching element 12A, and the electrode 132 (cathode) of the first protection element 13A. As shown in FIGS. 3 and 4 , the lead 3B includes a mounting portion 31B, a terminal portion 32B, a pad portion 33B, and a connecting portion 34B.

[0066] As shown in FIG. 3 , the mounting portion 31B is covered with a sealing member 7. The mounting portion 31B is bonded to a support substrate 51 via a bonding material 39. As shown in FIG. 4 , the first switching element 11A, the second switching element 12A, and the first protection element 13A are mounted on the mounting portion 31B. The mounting portion 31B is electrically connected to the electrode 111 (collector) of the first switching element 11A and the electrode 121 (drain) of the second switching element 12A, and is also electrically connected to the electrode 132 (cathode) of the first protection element 13A. In other words, the electrode 111 of the first switching element 11A, the electrode 121 of the second switching element 12A, and the electrode 132 of the first protection element 13A are electrically connected to one another via the mounting portion 31B.

[0067] As shown in FIG. 3, the terminal portion 32B is a portion of the lead 3B that protrudes from the sealing member 7. The terminal portion 32B protrudes from the mounting portion 31B on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32B is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32B is bent toward the z1 side in the z direction to form an L-shape.

[0068] The pad portion 33B and the connecting portion 34B are covered with the sealing member 7. As shown in FIG. 3 , the pad portion 33B and the connecting portion 34B are interposed between the mounting portion 31B and the terminal portion 32B. Like the pad portion 33A, the pad portion 33B is located on the z1 side in the z direction with respect to the mounting portion 31B. The pad portion 33B is connected to the terminal portion 32B. A wire 6A is bonded to the pad portion 33B. The connecting portion 34B is connected to the mounting portion 31B and the pad portion 33B, and like the connecting portion 34A, is inclined with respect to the y direction.

[0069] The second arm 1B is mounted on the lead 3C. That is, the first switching element 11B, the second switching element 12B, and the first protection element 13B are each mounted on the lead 3C. As will be understood from the configuration described in detail later, the lead 3C is electrically connected to the electrode 111 (collector) of the first switching element 11B, the electrode 121 (drain) of the second switching element 12B, and the electrode 132 (cathode) of the first protection element 13B. As shown in FIGS. 3 and 4 , the lead 3C includes a mounting portion 31C, a terminal portion 32C, a pad portion 33C, and a connecting portion 34C.

[0070] As shown in FIG. 3 , the mounting portion 31C is covered with a sealing member 7. The mounting portion 31C is bonded to a support substrate 51 via a bonding material 39. As shown in FIG. 4 , the first switching element 11B, the second switching element 12B, and the first protection element 13B are mounted on the mounting portion 31C. The mounting portion 31C is electrically connected to the electrode 111 (collector) of the first switching element 11B and the electrode 121 (drain) of the second switching element 12B, and is also electrically connected to the electrode 132 (cathode) of the first protection element 13B. In other words, the electrode 111 of the first switching element 11B, the electrode 121 of the second switching element 12B, and the electrode 132 of the first protection element 13B are electrically connected to one another via the mounting portion 31C.

[0071] As shown in FIG. 3, the terminal portion 32C is a portion of the lead 3C that protrudes from the sealing member 7. The terminal portion 32C protrudes from the mounting portion 31C on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32C is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32C is bent toward the z1 side in the z direction to form an L-shape.

[0072] The pad portion 33C and the connecting portion 34C are covered with the sealing member 7. As shown in FIG. 3 , the pad portion 33C and the connecting portion 34C are interposed between the mounting portion 31C and the terminal portion 32C. Like the pad portions 33A and 33B, the pad portion 33C is located on the z1 side in the z direction with respect to the mounting portion 31C. The pad portion 33C is connected to the terminal portion 32C. A wire 6B is bonded to the pad portion 33C. The connecting portion 34C is connected to the mounting portion 31C and the pad portion 33C, and like the connecting portions 34A and 34B, is inclined with respect to the y direction.

[0073] The third arm 1C is mounted on the lead 3D. That is, the first switching element 11C, the second switching element 12C, and the first protection element 13C are mounted on the lead 3D. As will be understood from the configuration described in detail later, the lead 3D is electrically connected to the electrode 111 (collector) of the first switching element 11C, the electrode 121 (drain) of the second switching element 12C, and the electrode 132 (cathode) of the first protection element 13C. As shown in FIGS. 3 and 4 , the lead 3D includes a mounting portion 31D, a terminal portion 32D, a pad portion 33D, and a connecting portion 34D.

[0074] As shown in FIG. 3 , the mounting portion 31D is covered with a sealing member 7. The mounting portion 31D is bonded to a support substrate 51 via a bonding material 39. As shown in FIG. 4 , the first switching element 11C, the second switching element 12C, and the first protection element 13C are mounted on the mounting portion 31D. The mounting portion 31D is electrically connected to the electrode 111 (collector) of the first switching element 11C and the electrode 121 (drain) of the second switching element 12C, and is also electrically connected to the electrode 132 (cathode) of the first protection element 13C. In other words, the electrode 111 of the first switching element 11C, the electrode 121 of the second switching element 12C, and the electrode 132 of the first protection element 13C are electrically connected to one another via the mounting portion 31D.

[0075] As shown in FIG. 3, the terminal portion 32D is a portion of the lead 3D that protrudes from the sealing member 7. The terminal portion 32D protrudes from the mounting portion 31D on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32D is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32D is bent toward the z1 side in the z direction to form an L-shape.

[0076] The pad portion 33D and the connecting portion 34D are covered with the sealing member 7. As shown in FIG. 3 , the pad portion 33D and the connecting portion 34D are interposed between the mounting portion 31D and the terminal portion 32D. Like the pad portions 33A, 33B, and 33C, the pad portion 33D is located on the z1 side of the mounting portion 31D in the z direction. The pad portion 33D is connected to the terminal portion 32D. A wire 6C is bonded to the pad portion 33D. The connecting portion 34D is connected to the mounting portion 31D and the pad portion 33D, and like the connecting portions 34A, 34B, and 34C, is inclined with respect to the y direction.

[0077] As shown in Fig. 4, the following relationship exists among the multiple mounting portions 31B, 31C, and 31D. An edge 301 on the y1 side in the y direction of mounting portion 31B and an edge 303 on the y1 side in the y direction of mounting portion 31D are at the same (or approximately the same) position in the y direction. An edge 302 on the y1 side in the y direction of mounting portion 31C is located on the y2 side in the y direction relative to the aforementioned edges 301 and 303. As a result, as shown in Fig. 4, mounting portion 31C is positioned so as to be recessed relative to the two mounting portions 31B and 31D in a plan view.

[0078] 2 and 3, leads 3E, 3F, and 3G are arranged on the x2 side in the x direction relative to lead 3D. Leads 3E, 3F, and 3G are aligned in the x direction. None of the multiple first switch units 1 and the multiple second switch units 2 is mounted on leads 3E, 3F, and 3G, respectively.

[0079] The lead 3E is electrically connected to the electrode 112 (emitter) of the first switching element 11A, the electrode 122 (source) of the second switching element 12A, and the electrode 131 (anode) of the first protection element 13A, as will be described in detail later. As shown in FIG. 3 and other figures, the lead 3E includes a terminal portion 32E and a pad portion 33E. The terminal portion 32E and the pad portion 33E are connected to each other.

[0080] The terminal portion 32E is a portion of the lead 3E that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32E protrudes from the pad portion 33E on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32E is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32E is bent toward the z1 side in the z direction to form an L-shape.

[0081] The pad portion 33E is covered with the sealing member 7 and has a rectangular shape in a plan view in the illustrated example. As shown in FIG. 3, the pad portion 33E does not overlap the support substrate 51 in a plan view. The pad portion 33E is disposed at the same position (same height) as the pad portions 33A to 33D in the z direction. As shown in FIG. 3, a wire 6D is bonded to the pad portion 33E, and the pad portion 33E is electrically connected to the electrode 112 (emitter) of the first switching element 11A, the electrode 122 (source) of the second switching element 12A, and the electrode 131 (anode) of the first protection element 13A, respectively, via the wire 6D.

[0082] The lead 3F is electrically connected to the electrode 112 (emitter) of the first switching element 11B, the electrode 122 (source) of the second switching element 12B, and the electrode 131 (anode) of the first protection element 13B, as will be described in detail later. As shown in FIG. 3 and other figures, the lead 3F includes a terminal portion 32F and a pad portion 33F. The terminal portion 32F and the pad portion 33F are connected to each other.

[0083] The terminal portion 32F is a portion of the lead 3F that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32F protrudes from the pad portion 33F on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32F is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32F is bent toward the z1 side in the z direction to form an L-shape.

[0084] The pad portion 33F is covered with the sealing member 7 and has a rectangular shape in the illustrated example in a plan view. As shown in FIG. 3, the pad portion 33F does not overlap the support substrate 51 in a plan view. The pad portion 33F is disposed at the same position (same height) as the pad portions 33A to 33E in the z direction. As shown in FIG. 3, a wire 6E is bonded to the pad portion 33F, and the pad portion 33F is electrically connected to the electrode 112 (emitter) of the first switching element 11B, the electrode 122 (source) of the second switching element 12B, and the electrode 131 (anode) of the first protection element 13B via the wire 6E.

[0085] The lead 3G is electrically connected to the electrode 112 (emitter) of the first switching element 11C, the electrode 122 (source) of the second switching element 12C, and the electrode 131 (anode) of the first protection element 13C, as will be described in detail later. As shown in FIG. 3 and other figures, the lead 3G includes a terminal portion 32G and a pad portion 33G. The terminal portion 32G and the pad portion 33G are connected to each other.

[0086] The terminal portion 32G is a portion of the lead 3G that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32G protrudes from the pad portion 33G on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32G is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32G is bent toward the z1 side in the z direction to form an L-shape.

[0087] The pad portion 33G is covered with the sealing member 7. As shown in FIG. 3, the pad portion 33G does not overlap the support substrate 51 in a plan view. The pad portion 33G is disposed at the same position (same height) as the pad portions 33A to 33F in the z direction. As shown in FIG. 3, a wire 6F is bonded to the pad portion 33G, and the pad portion 33G is electrically connected to the electrode 112 (emitter) of the first switching element 11C, the electrode 122 (source) of the second switching element 12C, and the electrode 131 (anode) of the first protection element 13C via the wire 6F.

[0088] The lead 3Z is disposed on the x1 side in the x direction relative to the lead 3A. The lead 3Z is not electrically connected to either the plurality of first switch sections 1 or the plurality of second switch sections 2. As shown in FIG. 3 and other figures, the lead 3Z includes a terminal section 32Z and a pad section 33Z. The terminal section 32Z and the pad section 33Z are connected to each other.

[0089] The terminal portion 32Z is ​​a portion of the lead 3Z that protrudes from the sealing member 7. As shown in Fig. 3, the terminal portion 32Z protrudes from the pad portion 33Z on the opposite side in the y direction from the leads 4A to 4H, 4J to 4N, and 4P to 4R. In the illustrated example, the terminal portion 32Z is ​​bent toward the z1 side in the z direction to form an L shape.

[0090] The pad portion 33Z is covered with the sealing member 7. As shown in Fig. 3, the pad portion 33Z does not overlap the support substrate 51 in a plan view. The pad portion 33Z is disposed at the same position (same height) as each of the pad portions 33A to 33G in the z direction.

[0091] 3, lead 4A, lead 4B, and lead 4C are arranged on the x1 side in the x direction relative to lead 4D. While lead 4A will be described in detail below, leads 4B and 4C also include similar components. In this case, the components of lead 4A are obtained by replacing "A" with "B" or "C" to become the components of lead 4B and lead 4C.

[0092] As shown in Fig. 3 etc., the lead 4A includes a terminal portion 42A and a pad portion 43A. As described above, and although detailed description will be omitted, as shown in Fig. 3 etc., the lead 4B includes a terminal portion 42B and a pad portion 43B, and the lead 4C includes a terminal portion 42C and a pad portion 43C.

[0093] The terminal portion 42A is a portion of the lead 4A that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42A protrudes from the pad portion 43A on the opposite side of the leads 3A to 3G and 3Z in the y direction. The terminal portion 42A is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42A is bent toward the z1 side in the z direction to form an L-shape.

[0094] The pad portion 43A is covered with a sealing member 7. As shown in Fig. 3, either an electronic component 89U or a plurality of wires 6L is bonded to the pad portion 43A. Note that an electronic component 89V is bonded to the pad portion 43B instead of the electronic component 89U, and an electronic component 89W is bonded to the pad portion 43C instead of the electronic component 89U. The shape of the pad portion 43A is not limited to the example shown in the figures.

[0095] 3, multiple leads 4D to 4G are arranged on the x2 side in the x direction relative to lead 4C. While lead 4D will be described in detail below, leads 4E, 4F, and 4G also include similar components. In this case, the "D" in each component of lead 4D is replaced with "E," "F," or "G" to represent each component of leads 4E, 4F, and 4G.

[0096] As shown in Fig. 3 etc., lead 4D includes a terminal portion 42D, a pad portion 43D, and a connecting portion 44D. As described above, and although detailed description will be omitted, as shown in Fig. 3 etc., lead 4E includes a terminal portion 42E, a pad portion 43E, and a connecting portion 44E, lead 4F includes a terminal portion 42F, a pad portion 43F, and a connecting portion 44F, and lead 4G includes a terminal portion 42G, a pad portion 43G, and a connecting portion 44G.

[0097] The terminal portion 42D is a portion of the lead 4D that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42D protrudes from the pad portion 43D on the opposite side of the leads 3A to 3G and 3Z in the y direction. The terminal portion 42D is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42D is bent toward the z1 side in the z direction to form an L-shape.

[0098] The pad portion 43D is covered with a sealing member 7. As shown in Fig. 3, one of a plurality of wires 6L is joined to the pad portion 43D, and the pad portion 43D is electrically connected to the electrode 82 of the second control element 8B via the wire 6L.

[0099] The connecting portion 44D is covered with the sealing member 7. As shown in Fig. 3, the connecting portion 44D is connected to the terminal portion 42D and the pad portion 43D and is interposed between them.

[0100] The second control element 8B is mounted on the lead 4H. As shown in Fig. 3 and other figures, the lead 4H includes a mounting portion 41H, a terminal portion 42H, a pad portion 43H, a plurality of connecting portions 44H, and a protruding portion 45H.

[0101] The mounting portion 41H is covered with the sealing member 7. As shown in Fig. 3, the second control element 8B is mounted on the mounting portion 41H. As described above, the second control element 8B is fixed to the mounting portion 41H by the bonding material 85. As shown in Fig. 10, the mounting portion 41H is spaced apart from the support substrate 51 in the z direction.

[0102] The terminal portion 42H is a portion of the lead 4H that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42H protrudes from the mounting portion 41H on the side opposite the leads 3A to 3G and 3Z in the y direction. The terminal portion 42H is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42H is bent in the z direction to form an L-shape.

[0103] The pad portion 43H is covered with the sealing member 7. The pad portion 43H is adjacent to the mounting portion 41H. As shown in FIG. 3, one of the plurality of wires 6L is joined to the pad portion 43H.

[0104] Each of the multiple connecting portions 44H is covered with the sealing member 7. Among the multiple connecting portions 44H, some are interposed between and connected to the terminal portion 42H and the pad portion 43H, and others are interposed between and connected to the mounting portion 41H and the protruding portion 45H.

[0105] As shown in FIG. 3, the protruding portion 45H extends from the connecting portion 44H connected to the mounting portion 41H toward the y1 side in the y direction, and protrudes from the sealing member 7.

[0106] The lead 4R has the first control element 8A mounted thereon. As shown in Fig. 3 and other figures, the lead 4R includes a mounting portion 41R, a terminal portion 42R, a pad portion 43R, and a connecting portion 44R.

[0107] The mounting portion 41R is covered with the sealing member 7. As shown in Fig. 3, the first control element 8A is mounted on the mounting portion 41R. As described above, the first control element 8A is fixed to the mounting portion 41R by the bonding material 85. Like the mounting portion 41H, the mounting portion 41R is spaced apart from the support substrate 51 in the z direction.

[0108] The terminal portion 42R is a portion of the lead 4R that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42R protrudes from the mounting portion 41R on the side opposite the leads 3A to 3G and 3Z in the y direction. The terminal portion 42R is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42R is bent in the z direction to form an L-shape.

[0109] The pad portion 43R is covered with the sealing member 7. The pad portion 43R is adjacent to the mounting portion 41R. As shown in FIG. 3, one of the plurality of wires 6L is joined to the pad portion 43R.

[0110] The connecting portions 44R are each covered with the sealing member 7. The connecting portions 44R are interposed between the terminal portion 42R and the pad portion 43R and connected to them.

[0111] 3, multiple leads 4J to 4N, 4P, and 4Q are arranged on the x2 side in the x direction with respect to lead 4H. While lead 4Q will be described in detail below, leads 4J, 4K, 4L, 4M, 4N, and 4P also include similar components. In this case, the "Q" in each component of lead 4Q is replaced with "J," "K," "L," "M," "N," or "P" to become each of the components of leads 4J, 4K, 4L, 4M, 4N, and 4P.

[0112] As shown in Fig. 3, the lead 4Q includes a terminal portion 42Q, a pad portion 43Q, and a connecting portion 44Q. As described above, and although detailed description will be omitted, as shown in Fig. 3, the lead 4J includes a terminal portion 42J, a pad portion 43J, and a connecting portion 44J, the lead 4K includes a terminal portion 42K, a pad portion 43K, and a connecting portion 44K, the lead 4L includes a terminal portion 42L, a pad portion 43L, and a connecting portion 44L, the lead 4M includes a terminal portion 42M, a pad portion 43M, and a connecting portion 44M, the lead 4N ​​includes a terminal portion 42N, a pad portion 43N, and a connecting portion 44N, and the lead 4P includes a terminal portion 42P, a pad portion 43P, and a connecting portion 44P.

[0113] The terminal portion 42Q is a portion of the lead 4Q that protrudes from the sealing member 7. As shown in FIG. 3 , the terminal portion 42Q protrudes from the pad portion 43Q on the opposite side of the leads 3A to 3G and 3Z in the y direction. The terminal portion 42Q is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42Q is bent in the z direction to form an L-shape. The terminal portions 42Q, 42J to 42N of the multiple leads 4Q, 4J to 4N are each disposed between the terminal portion 42H of the lead 4H and the terminal portion 42R of the lead 4R in the x direction, and the terminal portion 42P of the lead 4P is located on the x2 side in the x direction with respect to the terminal portion 42R.

[0114] The pad portion 43Q is covered with a sealing member 7. As shown in Fig. 3, one of the plurality of wires 6L is joined to the pad portion 43Q, and electrical conduction is established with the electrode 82 of the first control element 8A via the wire 6L. However, in the example shown in Fig. 3, none of the plurality of wires 6L is joined to the pad portion 43P.

[0115] The connecting portion 44Q is covered with the sealing member 7. As shown in Fig. 3, the connecting portion 44Q is connected to the terminal portion 42Q and the pad portion 43Q and is interposed between them.

[0116] In the illustrated example, the multiple terminals 42A to 42C are arranged side by side in the x direction at a first pitch width d1 (see FIG. 3). The multiple terminals 42D to 42H, 42J to 42N, and 42P to 42R are arranged side by side in the x direction at a second pitch width d2 (see FIG. 3). The first pitch width d1 is larger than the second pitch width d2. The distance between terminals 42C and 42D in the x direction is the first pitch width d1.

[0117] As shown in FIG. 8 , the support substrate 51 supports the leads 3A-3D and is provided to transfer heat from the first switch sections 1 and the second switch sections 2 to the outside of the semiconductor device A1. The support substrate 51 is plate-shaped and rectangular in plan view. The support substrate 51 is made of an insulating material, such as alumina (Al2O3), silicon nitride (SiN), aluminum nitride (AlN), or alumina containing zirconia. While a ceramic structure is preferred for the support substrate 51 in terms of strength, heat transfer rate, and insulation, various materials (e.g., epoxy resin, silicon, etc.) may be used. Furthermore, the support substrate 51 is preferably made of a material with a higher thermal conductivity than the sealing member 7.

[0118] As shown in FIGS. 3 and 8 to 11 , the support substrate 51 has a first surface 511, a second surface 512, a third surface 513, a fourth surface 514, a fifth surface 515, and a sixth surface 516. As shown in FIGS. 8 to 11 , the first surface 511 and the second surface 512 are spaced apart in the z direction. The first surface 511 faces upward in the z direction (the z1 side in the z direction), and the second surface 512 faces downward in the z direction (the z2 side in the z direction). As shown in FIG. 8 , a plurality of mounting portions 311A, 312A, 313A, 31B, 31C, and 31D are bonded to the first surface 511 via a plurality of bonding materials 39. The second surface 512 is exposed from the sealing member 7, as shown in FIGS. 8 to 11 . The third surface 513, the fourth surface 514, the fifth surface 515, and the sixth surface 516 are located between the first surface 511 and the second surface 512 in the z direction and are connected to them. As shown in FIGS. 3 and 8 , the third surface 513 and the fourth surface 514 are spaced apart in the x direction. The third surface 513 faces the x2 side in the x direction, and the fourth surface 514 faces the x1 side in the x direction. As shown in FIGS. 3 and 9 to 11 , the fifth surface 515 and the sixth surface 516 are spaced apart in the y direction. The fifth surface 515 faces the y2 side in the y direction, and the sixth surface 516 faces the y1 side in the y direction. In the illustrated example, the first surface 511, the second surface 512, the third surface 513, the fourth surface 514, the fifth surface 515, and the sixth surface 516 are each flat.

[0119] The plurality of connection members 6 electrically connect two parts spaced apart from each other. As can be seen from FIGS. 3 to 5 , the plurality of connection members 6 include a plurality of wires 6A to 6H, 6J to 6L, and 6Q. Each of the wires 6A to 6H, 6J to 6L, and 6Q (each connection member 6) is a bonding wire. Note that instead of each of the wires 6A to 6H, 6J to 6L, and 6Q, each connection member 6 may be a conductive plate-like member, a bonding ribbon, or a plated wire.

[0120] 5, the wire 6A is joined to the electrode 212 (emitter) of the third switching element 21A, the electrode 222 (source) of the fourth switching element 22A, and the electrode 231 (anode) of the second protecting element 23A. This establishes electrical continuity among the electrode 212 of the third switching element 21A, the electrode 222 of the fourth switching element 22A, and the electrode 231 of the second protecting element 23A. Furthermore, the wire 6A is joined to the pad portion 33B of the lead 3B, as shown in FIG. Since lead 3B is electrically connected to first arm 1A (electrode 111 of first switching element 11A, electrode 121 of second switching element 12A, and electrode 132 of first protective element 13A), electrode 212 of third switching element 21A, electrode 222 of fourth switching element 22A, and electrode 231 of second protective element 23A are electrically connected to electrode 111 of first switching element 11A, electrode 121 of second switching element 12A, and electrode 132 of first protective element 13A via lead 3B and wire 6A.

[0121] 5, the wire 6B is joined to the electrode 212 (emitter) of the third switching element 21B, the electrode 222 (source) of the fourth switching element 22B, and the electrode 231 (anode) of the second protecting element 23B. This establishes electrical continuity among the electrode 212 of the third switching element 21B, the electrode 222 of the fourth switching element 22B, and the electrode 231 of the second protecting element 23B. Furthermore, the wire 6B is joined to the pad portion 33C of the lead 3C, as shown in FIG. Since lead 3C is electrically connected to second arm 1B (electrode 111 of first switching element 11B, electrode 121 of second switching element 12B, and electrode 132 of first protective element 13B), electrode 212 of third switching element 21B, electrode 222 of fourth switching element 22B, and electrode 231 of second protective element 23B are electrically connected to electrode 111 of first switching element 11B, electrode 121 of second switching element 12B, and electrode 132 of first protective element 13B via lead 3C and wire 6B.

[0122] 5, the wire 6C is joined to the electrode 212 (emitter) of the third switching element 21C, the electrode 222 (source) of the fourth switching element 22C, and the electrode 231 (anode) of the second protective element 23C. This establishes electrical continuity among the electrode 212 of the third switching element 21C, the electrode 222 of the fourth switching element 22C, and the electrode 231 of the second protective element 23C. Furthermore, the wire 6C is joined to the pad portion 33D of the lead 3D, as shown in FIG. Since lead 3D is electrically connected to third arm 1C (electrode 111 of first switching element 11C, electrode 121 of second switching element 12C, and electrode 132 of first protective element 13C), electrode 212 of third switching element 21C, electrode 222 of fourth switching element 22C, and electrode 231 of second protective element 23C are electrically connected to electrode 111 of first switching element 11C, electrode 121 of second switching element 12C, and electrode 132 of first protective element 13C via lead 3D and wire 6C.

[0123] As shown in FIG. 4 , the wire 6D is bonded to the electrode 112 (emitter) of the first switching element 11A, the electrode 122 (source) of the second switching element 12A, and the electrode 131 (anode) of the first protecting element 13A. This establishes electrical continuity among the electrode 112 of the first switching element 11A, the electrode 122 of the second switching element 12A, and the electrode 131 of the first protecting element 13A. Furthermore, as shown in FIG. 3 , the wire 6D is bonded to the pad portion 33E of the lead 3E. Therefore, the lead 3E is electrically connected to the electrode 112 of the first switching element 11A, the electrode 122 of the second switching element 12A, and the electrode 131 of the first protecting element 13A via the wire 6D.

[0124] As shown in FIG. 4 , the wire 6E is bonded to the electrode 112 (emitter) of the first switching element 11B, the electrode 122 (source) of the second switching element 12B, and the electrode 131 (anode) of the first protecting element 13B. This establishes electrical continuity among the electrode 112 of the first switching element 11B, the electrode 122 of the second switching element 12B, and the electrode 131 of the first protecting element 13B. Furthermore, as shown in FIG. 3 , the wire 6E is bonded to the pad portion 33F of the lead 3F. Therefore, the lead 3F is electrically connected to the electrode 112 of the first switching element 11B, the electrode 122 of the second switching element 12B, and the electrode 131 of the first protecting element 13B via the wire 6E.

[0125] As shown in FIG. 4 , the wire 6F is bonded to the electrode 112 (emitter) of the first switching element 11C, the electrode 122 (source) of the second switching element 12C, and the electrode 131 (anode) of the first protecting element 13C. This establishes electrical continuity among the electrode 112 of the first switching element 11C, the electrode 122 of the second switching element 12C, and the electrode 131 of the first protecting element 13C. Furthermore, as shown in FIG. 3 , the wire 6F is bonded to the pad portion 33G of the lead 3G. Therefore, the lead 3G is electrically connected to the electrode 112 of the first switching element 11C, the electrode 122 of the second switching element 12C, and the electrode 131 of the first protecting element 13C via the wire 6F.

[0126] 4, the plurality of wires 6G are connected to the electrodes 113 of the first switching elements 11 and the electrodes 81 of the first control element 8A. The plurality of wires 6G transmit the first drive signals corresponding to the plurality of first switching elements 11, respectively.

[0127] 4, the plurality of wires 6H are connected to the electrodes 123 of the second switching elements 12 and the electrodes 81 of the first control element 8A. The plurality of wires 6H transmit the first drive signals corresponding to the plurality of second switching elements 12, respectively.

[0128] 5, the plurality of wires 6Q are connected to the electrodes 213 of the respective third switching elements 21 and the electrode 81 of the second control element 8B. The plurality of wires 6Q transmit the second drive signals corresponding to the respective third switching elements 21.

[0129] 5, the plurality of wires 6J are connected to the electrodes 223 of the respective fourth switching elements 22 and the electrode 81 of the second control element 8B. The plurality of wires 6J transmit the second drive signals corresponding to the respective fourth switching elements 22.

[0130] The plurality of wires 6K are connected to the electrodes 222 of the respective fourth switching elements 22 and the electrode 83 of the second control element 8B. Each of the plurality of wires 6K transmits a detection signal for detecting the conduction state of any of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C. In the illustrated example, the detection signal is the source current (or source voltage) of each fourth switching element 22.

[0131] Each of the plurality of wires 6L is connected to an electrode 82 of the first control element 8A or an electrode 82 of the second control element 8B and to one of the plurality of electronic components 89U, 89V, 89W or to pad portions 43A to 43H, 43J to 43N, 43Q, 43R of one of the plurality of leads 4A to 4H, 4J to 4N, 4Q, 4R. Thus, each wire 6L electrically connects the first control element 8A or the second control element 8B to each of the leads 4A to 4H, 4J to 4N, 4Q, 4R.

[0132] In the multiple connection members 6, the wires 6A to 6F have a larger wire diameter than the wires 6G, 6H, 6J to 6L, and 6Q. This is because, when the semiconductor device A1 is configured as an IPM, a higher voltage is applied to the multiple leads 3A to 3G than to the multiple leads 4A to 4F, and a larger current flows through them. The wires 6A to 6F are made of, for example, Al or an Al alloy. The constituent material of the wires 6A to 6F may be Au or an Au alloy, or Cu or a Cu alloy, instead of Al or an Al alloy. The wires 6G, 6H, 6J to 6L, and 6Q are made of, for example, Au or an Au alloy. The constituent material of the wires 6G, 6H, 6J to 6L, and 6Q may be Al or an Al alloy, or Cu or a Cu alloy, instead of Au or an Au alloy.

[0133] 1 to 3 and 6 to 11, the sealing member 7 covers the first switch sections 1, the second switch sections 2, the first control element 8A, the second control element 8B, the electronic components 89U, 89V, and 89W, a portion of each of the leads 3A to 3G and 3Z, a portion of each of the leads 4A to 4H, 4J to 4N, and 4P to 4R, a portion of the support substrate 51, and the connection members 6. The sealing member 7 is, for example, a black epoxy resin. The sealing member 7 has a resin main surface 71, a resin back surface 72, and a plurality of resin side surfaces 73 to 76.

[0134] As shown in FIGS. 6 to 11 , the resin main surface 71 and the resin back surface 72 are spaced apart in the z direction. The resin main surface 71 faces upward in the z direction (toward the z1 side in the z direction), and the resin back surface 72 faces downward in the z direction (toward the z2 side in the z direction). The resin main surface 71 and the resin back surface 72 are each flat (or approximately flat). Each of the multiple resin side surfaces 73 to 76 is located between the resin main surface 71 and the resin back surface 72 in the z direction and is connected to them. As shown in FIGS. 2 , 3 , and 8 , the pair of resin side surfaces 73, 74 are spaced apart in the x direction. The pair of resin side surfaces 73, 74 face opposite each other in the x direction. As shown in FIGS. 2 , 3 , and 9 to 11 , the pair of resin side surfaces 75, 76 are spaced apart in the y direction. The pair of resin side surfaces 75, 76 face opposite each other in the y direction. As shown in FIGS. 2 and 3 , a recess 731 recessed in the x direction is formed in the resin side surface 73. A recess 741 recessed in the x direction is formed on the resin side surface 74. The recess 731 and the recess 741 are used, for example, to fix the semiconductor device A1 when it is mounted. Furthermore, as shown in FIGS. 2 and 3 , a plurality of recesses 761 recessed in the y direction are formed on the resin side surface 76.

[0135] In the semiconductor device A1, a first DC voltage applied to terminal 32A (lead 3A) and terminal 32E (lead 3E) is converted into a first AC voltage by the switching operations of the first arm 1A and the fourth arm 2A. The first AC voltage is then output from terminal 32B (lead 3B). A second DC voltage applied to terminal 32A (lead 3A) and terminal 32F (lead 3F) is converted into a second AC voltage by the switching operations of the second arm 1B and the fifth arm 2B. The second AC voltage is then output from terminal 32C (lead 3C). A third DC voltage applied to terminal 32A (lead 3A) and terminal 32G (lead 3G) is converted into a third AC voltage by the switching operations of the third arm 1C and the sixth arm 2C. The third AC voltage is then output from terminal 32D (lead 3D).

[0136] The semiconductor device A1 configured as described above has the following circuit configuration, as shown in FIG. 12 . In the example shown in FIG. 12 , the first switching elements 11A, 11B, and 11C and the third switching elements 21A, 21B, and 21C are IGBTs, and the second switching elements 12A, 12B, and 12C and the fourth switching elements 22A, 22B, and 22C are MOSFETs. The first protection elements 13A, 13B, and 13C and the second protection elements 23A, 23B, and 23C are Schottky barrier diodes. Note that FIG. 12 also illustrates the parasitic diodes of the second switching elements 12A, 12B, and 12C and the fourth switching elements 22A, 22B, and 22C.

[0137] The collectors (electrodes 211) of each of the third switching elements 21A, 21B, and 21C, the drains (electrodes 221) of each of the fourth switching elements 22A, 22B, and 22C, and the cathodes (electrodes 131) of each of the second protection elements 23A, 23B, and 23C are connected to each other and to the P terminal (lead 3A).

[0138] The emitter (electrode 212) of the third switching element 21A, the source (electrode 222) of the fourth switching element 22A, and the anode (electrode 231) of the second protection element 23A are connected to the collector (electrode 111) of the first switching element 11A, the drain (electrode 121) of the second switching element 12A, and the cathode (electrode 132) of the first protection element 13A via a connection point N1. The connection point N1 is connected to the U terminal (lead 3B).

[0139] The emitter (electrode 212) of the third switching element 21B, the source (electrode 222) of the fourth switching element 22B, and the anode (electrode 231) of the second protection element 23B are connected to the collector (electrode 111) of the first switching element 11B, the drain (electrode 121) of the second switching element 12B, and the cathode (electrode 132) of the first protection element 13B via connection point N2. Connection point N2 is connected to the V terminal (lead 3C).

[0140] The emitter (electrode 212) of the third switching element 21C, the source (electrode 222) of the fourth switching element 22C, and the anode (electrode 231) of the second protection element 23C are connected to the collector (electrode 111) of the first switching element 11C, the drain (electrode 121) of the second switching element 12C, and the cathode (electrode 132) of the first protection element 13C via a connection point N3. The connection point N3 is connected to the W terminal (lead 3D).

[0141] The emitter (electrode 112) of the first switching element 11A, the source (electrode 122) of the second switching element 12A, and the anode (electrode 131) of the first protection element 13A are connected to the NU terminal (lead 3E). The emitter (electrode 112) of the first switching element 11B, the source (electrode 122) of the second switching element 12B, and the anode (electrode 131) of the first protection element 13B are connected to the NV terminal (lead 3F). The emitter (electrode 112) of the first switching element 11C, the source (electrode 122) of the second switching element 12C, and the anode (electrode 131) of the first protection element 13C are connected to the NW terminal (lead 3G).

[0142] The voltage level applied to the U terminal (lead 3B), V terminal (lead 3C), and W terminal (lead 3D) is, for example, about 0 V to 650 V. On the other hand, the voltage level applied to the NU terminal (lead 3E), NV terminal (lead 3F), and NW terminal (lead 3G) is, for example, about 0 V, which is lower than the voltage level applied to the U terminal (lead 3B), V terminal (lead 3C), and W terminal (lead 3D).

[0143] The gates (electrodes 213) of the third switching elements 21A, 21B, and 21C and the gates (electrodes 223) of the fourth switching elements 22A, 22B, and 22C are connected to the second control element 8B. The sources (electrodes 222) of the fourth switching elements 22A, 22B, and 22C are connected to the second control element 8B. The gates (electrodes 113) of the first switching elements 11A, 11B, and 11C and the gates (electrodes 123) of the second switching elements 12A, 12B, and 12C are connected to the first control element 8A.

[0144] The LINU terminal (lead 4Q), LINV terminal (lead 4J), and LINW terminal (lead 4K) are connected to an external gate control circuit and receive a first input signal from the gate control circuit. The HINU terminal (lead 4E), HINV terminal (lead 4F), and HINW terminal (lead 4G) are connected to the gate control circuit (not shown) and receive a second input signal from the gate control circuit.

[0145] The first control element 8A is electrically connected to the LINU terminal (lead 4Q), the LINV terminal (lead 4J), the LINW terminal (lead 4K), the second VCC terminal (lead 4L), the FO terminal (lead 4M), the CIN terminal (lead 4N), and the second GND terminal (lead 4R). The first control element 8A is also electrically connected to the first GND terminal (lead 4H). The second VCC terminal is a terminal that supplies the power supply voltage VCC to the first control element 8A. The first control element 8A receives a first input signal from the LINU terminal, the LINV terminal, and the LINW terminal. The first control element 8A generates the first drive signal (e.g., a gate voltage) based on the input first input signal. The generated first drive signals are then input to the gates (electrodes 113) of the first switching elements 11A, 11B, and 11C and the gates (electrodes 123) of the second switching elements 12A, 12B, and 12C, respectively.

[0146] The second control element 8B is electrically connected to the VBU terminal (lead 4A), the VBV terminal (lead 4B), the VBW terminal (lead 4C), the HINU terminal (lead 4D), the HINV terminal (lead 4E), the HINW terminal (lead 4F), the first VCC terminal (lead 4G), and the first GND terminal (lead 4H). The second control element 8B is also electrically connected to the second GND terminal (lead 4R). The first VCC terminal is a terminal that supplies the power supply voltage VCC to the second control element 8B. The second control element 8B receives second input signals from the HINU terminal, the HINV terminal, and the HINW terminal. The second control element 8B generates the second drive signal (e.g., gate voltage) based on the received second input signal. The generated second drive signals are then input to the gates (electrodes 213) of the third switching elements 21A, 21B, and 21C and the gates (electrodes 223) of the fourth switching elements 22A, 22B, and 22C, respectively.

[0147] 12, the first GND terminal (lead 4H) and the second GND terminal (lead 4R) are connected inside the semiconductor device A1 and are at the same potential. Alternatively, the first GND terminal (lead 4H) and the second GND terminal (lead 4R) may be separated from each other inside the semiconductor device A1 and may be at different potentials.

[0148] The semiconductor device A1 has the following advantages.

[0149] The semiconductor device A1 includes a plurality of first switch units 1 and a first control element 8A. Each of the plurality of first switch units 1 includes a first switching element 11 and a second switching element 12. The first switching element 11 of each of the first switch units 1 is connected to the first control element 8A by a wire 6G. The wire 6G is an example of a "first connecting member." The second switching element 12 of each of the first switch units 1 is connected to the first control element 8A by a wire 6H. The wire 6H is an example of a "second connecting member." The first switching element 11 and the second switching element 12 of each of the plurality of first switch units 1 are arranged to surround the first control element 8A in a planar view. This configuration reduces the distance from the first control element 8A to each of the first switching elements 11 and each of the second switching elements 12 in a planar view. This facilitates wiring from the first control element 8A to each of the first switching elements 11 and each of the second switching elements 12. Furthermore, since the distance from the first control element 8A to each of the first switching elements 11 and each of the second switching elements 12 in a plan view can be reduced, the length of each of the wires 6G and 6H can be shortened. This reduces the cost of these wires 6G and 6H and reduces the resistance and inductance components. Furthermore, shortening the length of each of the wires 6G and 6H is effective in suppressing wire sweep of these wires 6G and 6H. For these reasons, the semiconductor device A1 has a more preferable structure in a configuration in which multiple switching elements (the first switching element 11 and the second switching element 12) operate as a single first switch section 1. The same applies to the relationship between the multiple second switch sections 2 (the third switching element 21 and the fourth switching element 22) and the second control element 8B. In other words, the semiconductor device A1 has a more preferable structure in which the third switching element 21 and the fourth switching element 22 of each of the multiple second switch sections 2 are arranged to surround the second control element 8B in a planar view, thereby operating the multiple switching elements (the third switching element 21 and the fourth switching element 22) as a single second switch section 2.

[0150] In the semiconductor device A1, in each first switch section 1, the first switching element 11 is an IGBT, and the second switching element 12 is a MOSFET. It is generally known that MOSFETs and IGBTs exhibit the following electrical characteristics due to differences in their physical properties and structures. For example, MOSFETs have faster switching speeds and lower switching losses than IGBTs. Meanwhile, IGBTs have lower on-resistance and lower steady-state losses than MOSFETs in high-current ranges. Therefore, the semiconductor device A1 can reduce switching losses by controlling the second switching element 12 (MOSFET) to allow more current to flow during switching (turn-on and turn-off) of each first switch section 1. Furthermore, when each first switch section 1 is in a steady state, the semiconductor device A1 can reduce steady-state losses by controlling the first switching element 11 (IGBT) to allow more current to flow. Therefore, the semiconductor device A1 can reduce both switching losses and steady-state losses, thereby reducing power losses. In other words, the semiconductor device A1 can improve conversion efficiency. The same applies to the relationship between the third switching element 21 and the fourth switching element 22 in each second switch section 2. That is, in the semiconductor device A1, the third switching element 21 is an IGBT and the fourth switching element 22 is a MOSFET, so that it is possible to reduce both switching loss and steady-state loss, and thus reduce power loss.

[0151] In the semiconductor device A1, as shown in FIG. 4 , the first control element 8A is located closer to the y1 side in the y direction than the edge 302 on the y1 side of the mounting portion 31C. The edge 302 on the y1 side in the y direction of the mounting portion 31C is located closer to the y2 side in the y direction than the edge 301 on the y1 side of the mounting portion 31B and the edge 303 on the y1 side of the mounting portion 31D. With this configuration, the mounting portion 31C is recessed in the y direction relative to the two mounting portions 31B and 31D. Therefore, by placing the first control element 8A in this recessed region, the first switching element 11 and the second switching element 12 of each first switch unit 1 can be arranged around the first control element 8A. Furthermore, the dimension of the semiconductor device A1 in the y direction can be reduced. In other words, even if the semiconductor device A1 is configured to operate multiple switching elements (first switching element 11 and second switching element 12) as a single first switch section 1, it is possible to prevent the planar size from increasing.

[0152] In the semiconductor device A1, as shown in FIG. 5 , the second control element 8B is located closer to the y1 side in the y direction than the edge 305 on the y1 side of the mounting portion 312A. The edge 305 on the y1 side in the y direction of the mounting portion 312A is located closer to the y2 side in the y direction than the edge 304 on the y1 side of the mounting portion 311A ​​and the edge 306 on the y1 side of the mounting portion 313A. With this configuration, the mounting portion 312A is recessed in the y direction relative to the two mounting portions 311A ​​and 313A. Therefore, by placing the second control element 8B in this recessed region, the third switching element 21 and the fourth switching element 22 of each second switch unit 2 can be arranged around the second control element 8B. Furthermore, the dimension of the semiconductor device A1 in the y direction can be reduced. In other words, even if the semiconductor device A1 is configured to operate multiple switching elements (the third switching element 21 and the fourth switching element 22) as a single second switch section 2, it is possible to prevent the planar size from increasing.

[0153] Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. Note that the configurations of the components in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0154] 13 shows a semiconductor device A11 according to a first modification of the first embodiment. The semiconductor device A11 differs from the semiconductor device A1 in the following respects. Specifically, as shown in FIG. 13 , the electrode 112 of the first switching element 11B and the electrode 122 of the second switching element 12B are connected by a wire 6M, not by a wire 6E. Similarly, as shown in FIG. 13 , the electrode 212 of the third switching element 21B and the electrode 222 of the fourth switching element 22B are connected by a wire 6N, not by a wire 6B.

[0155] Each of the wires 6M and 6N is a bonding wire similar to the multiple wires 6A to 6F. The wire 6M is bonded to the electrode 112 of the first switching element 11B and the electrode 122 of the second switching element 12B. The wire 6N is bonded to the electrode 212 of the third switching element 21B and the electrode 222 of the fourth switching element 22B.

[0156] The semiconductor device A11 according to this modification also achieves the same effects as the semiconductor device A1. Furthermore, the semiconductor device A11 facilitates the formation of the wires 6B and 6E for the following reasons. In the semiconductor device A1, the portion of the wire 6E extending from the portion bonded to the electrode 112 of the first switching element 11B toward the portion bonded to the electrode 122 of the second switching element 12B and the portion extending from the portion bonded to the electrode 122 of the second switching element 12B toward the portion bonded to the electrode 131 of the first protection element 13B are bent at an angle close to a right angle in a plan view. Bending wires at such an angle close to a right angle requires more advanced wire bonding technology. On the other hand, in the semiconductor device A11, the electrode 112 of the first switching element 11B and the electrode 122 of the second switching element 12B are connected by a separate wire 6M, so there is no need to bend the wire 6E at an angle close to a right angle. Therefore, the semiconductor device A11 facilitates the formation of the wire 6E. The same applies to the wire 6B. That is, since the electrode 212 of the third switching element 21B and the electrode 222 of the fourth switching element 22B are connected by a separate wire 6N, there is no need to bend the wire 6B at an angle close to a right angle. Therefore, in the semiconductor device A11, the wire 6B can be easily formed.

[0157] 14 shows a semiconductor device A12 according to a second modification of the first embodiment. The semiconductor device A12 differs from the semiconductor device A1 in the following respects. Specifically, as shown in FIG. 14, the electrode 112 of the first switching element 11B is electrically connected to the pad 33F (lead 3F) via a wire 6R rather than a wire 6E. Similarly, as shown in FIG. 14, the electrode 212 of the third switching element 21B is electrically connected to the pad 33C (lead 3C) via a wire 6P rather than a wire 6B.

[0158] Each of the wires 6R and 6P is a bonding wire similar to the multiple wires 6A to 6F. The wire 6R is bonded to the electrode 112 of the first switching element 11B and the pad portion 33F. The wire 6E is not bonded to the electrode 112 of the first switching element 11B, but is bonded to the electrode 122 of the second switching element 12B, the electrode 131 of the first protective element 13B, and the pad portion 33F. The wire 6P is bonded to the electrode 212 of the third switching element 21B and the pad portion 33C. The wire 6B is not bonded to the electrode 212 of the third switching element 21B, but is bonded to the electrode 222 of the fourth switching element 22B, the electrode 231 of the second protective element 23B, and the pad portion 33C.

[0159] The semiconductor device A12 according to this modification also achieves the same effects as the semiconductor device A1. Furthermore, in the semiconductor device A12, as in the semiconductor device A11, it is not necessary to bend the wires 6B, 6E at angles close to a right angle, which makes it easier to form the wires 6B, 6E.

[0160] 15 shows a semiconductor device A13 according to a third modification of the first embodiment. The semiconductor device A13 differs from the semiconductor device A1 in the following respects. That is, as shown in FIG. 15 , the shape and size of the electrodes 113 on the element main surface 11 a of each first switching element 11 are different in a planar view. The shape and size of the electrodes 123 of each second switching element 12 are different in a planar view.

[0161] 15, in the semiconductor device A13, the electrodes 113 of each first switching element 11 are strip-shaped extending in the x-direction in plan view, and the electrodes 123 of each second switching element 12 are strip-shaped extending in the x-direction in plan view.

[0162] Although not shown in the figure, the electrodes 213 of each third switching element 21 and the electrodes 223 of each fourth switching element 22 may also have different shapes and sizes in a planar view, similar to the electrodes 113 of each first switching element 11 and the electrodes 123 of each second switching element 12.

[0163] The semiconductor device A13 according to this modification also achieves the same effects as the semiconductor device A1. Furthermore, the semiconductor device A13 facilitates the formation of the wires 6G, 6H for the following reasons: In the semiconductor device A13, the electrodes 113 of each first switching element 11 are larger than the electrodes 113 of each first switching element 11 of the semiconductor device A1, thereby increasing the area to which the wires 6G can be bonded. This increases the degree of freedom in determining the bonding position of each wire 6G relative to the electrodes 113 of each first switching element 11, thereby facilitating the formation of each wire 6G. Furthermore, in the semiconductor device A13, the electrodes 113 of each first switching element 11 extend to the periphery of each first switching element 11 in a plan view, thereby enabling the length of each wire 6G to be shortened. Similarly, in the semiconductor device A13, the electrodes 123 of each second switching element 12 are larger than the electrodes 123 of each second switching element 12 of the semiconductor device A1, thereby increasing the area to which the wires 6H can be bonded. This increases the degree of freedom in the bonding position of each wire 6H to the electrode 123 of each second switching element 12 in the semiconductor device A13, making it easier to form each wire 6H. Furthermore, in the semiconductor device A13, the electrode 123 of each second switching element 12 extends to the vicinity of the periphery of each second switching element 12 in a plan view, making it possible to shorten the length of each wire 6H. The same applies to the wire 6Q bonded to the electrode 213 of each third switching element 21 and the wire 6J bonded to the electrode 223 of each fourth switching element 22.

[0164] 16 shows a semiconductor device A14 according to a fourth modified example of the first embodiment. The semiconductor device A14 differs from the semiconductor device A1 in the following respects. That is, as shown in FIG. 16 , each first switching element 11 has a plurality of electrodes 113 arranged on its main surface 11 a. Furthermore, each second switching element 12 has a plurality of electrodes 123 arranged on its main surface 12 a. Although not shown, each third switching element 21 may have a plurality of electrodes 213 arranged on its main surface 21 a, and each fourth switching element 22 may have a plurality of electrodes 223 arranged on its main surface 22 a.

[0165] The semiconductor device A14 according to this modification also achieves the same effects as the semiconductor device A1. Furthermore, the semiconductor device A14 facilitates the formation of the wires 6G, 6H for the following reasons: In the semiconductor device A14, each first switching element 11 has multiple electrodes 113, which increases the degree of freedom in the bonding position of each wire 6G. Therefore, the semiconductor device A14 facilitates the formation of each wire 6G. Similarly, in the semiconductor device A14, each second switching element 12 has multiple electrodes 123, which increases the degree of freedom in the bonding position of each wire 6H. Therefore, the semiconductor device A14 facilitates the formation of each wire 6H. This also applies to the wires 6Q bonded to the electrodes 213 of each third switching element 21 and the wires 6J bonded to the electrodes 223 of each fourth switching element 22.

[0166] 17 shows a semiconductor device A15 according to a fifth modification of the first embodiment. The semiconductor device A15 differs from the semiconductor device A1 in the following respects. That is, as shown in FIG. 17 , the arrangement of the electrodes 113 on the element main surface 11 a of each first switching element 11 is different. Furthermore, the arrangement of the electrodes 123 on the element main surface 12 a of each second switching element 12 is different.

[0167] 17, in the semiconductor device A15, the electrode 113 of the first switching element 11A and the electrode 123 of the second switching element 12A are arranged based on the relative positional relationship between the mounting portion 31B and the first control element 8A. Specifically, since the mounting portion 31B is located on the x1 side in the x direction relative to the first control element 8A, the electrode 113 of the first switching element 11A and the electrode 123 of the second switching element 12A are arranged on the x2 side in the x direction.

[0168] 17, in the semiconductor device A15, the electrode 113 of the first switching element 11B and the electrode 123 of the second switching element 12B are arranged based on the relative positional relationship between the mounting portion 31C and the first control element 8A. Specifically, since the mounting portion 31C is located on the y2 side in the y direction relative to the first control element 8A, the electrode 113 of the first switching element 11B and the electrode 123 of the second switching element 12B are arranged on the y1 side in the y direction.

[0169] 17, in the semiconductor device A15, the electrode 113 of the first switching element 11C and the electrode 123 of the second switching element 12C are arranged based on the relative positional relationship between the mounting portion 31D and the first control element 8A. Specifically, since the mounting portion 31D is located on the x2 side in the x direction relative to the first control element 8A, the electrode 113 of the first switching element 11C and the electrode 123 of the second switching element 12C are arranged on the x1 side in the x direction.

[0170] As described above, in the semiconductor device A15, the electrodes 113 of each first switching element 11 and the electrodes 123 of each second switching element 12 are arranged on the side where the first control element 8A is located, with the first control element 8A at the center.

[0171] The semiconductor device A15 according to this modification also provides the same effects as those of the semiconductor device A1.

[0172] 18 shows a semiconductor device A16 according to a sixth modified example of the first embodiment. The semiconductor device A16 differs from the semiconductor device A15 (fifth modified example of the first embodiment) in the following respects. That is, as shown in FIG. 18, the arrangement of the electrode 113 of the first switching element 11B and the electrode 123 of the second switching element 12B is different.

[0173] 18 , in the semiconductor device A16, the electrode 113 of the first switching element 11B and the electrode 123 of the second switching element 12B are arranged on opposite sides in the x direction. With this configuration, the electrode 113 of each first switching element 11 and the electrode 123 of each second switching element 12 are arranged symmetrically with respect to the center of the first control element 8A in the x direction.

[0174] The semiconductor device A16 according to this modification also provides the same effects as those of the semiconductor device A1.

[0175] 19 shows a semiconductor device A17 according to a seventh modification of the first embodiment. The semiconductor device A17 differs from the semiconductor device A1 in the following respects. That is, as shown in FIG. 19 , the electrode 113 of each first switching element 11 is arranged on either the x1 side or the x2 side in the x direction, while the electrode 123 of each second switching element 12 is arranged on the y1 side in the y direction. In other words, the arrangement of the control electrodes (e.g., gates) varies depending on the type of switching element.

[0176] The semiconductor device A17 according to this modification also achieves the same effects as those of the semiconductor device A1. Furthermore, in the semiconductor device A17, the arrangement of the control electrodes (e.g., gates) is changed for each type of switching element, so that it is possible to distinguish between the first switching elements 11 and the second switching elements 12 even when the first switching elements 11 and the second switching elements 12 have the same (or substantially the same) shape and the same (or substantially the same) size in a plan view.

[0177] In the fifth to seventh modified examples of the first embodiment, although not shown in the drawings, the electrodes 213 of each third switching element 21 and the electrodes 223 of each fourth switching element 22 may also be arranged in the same manner as the electrodes 113 of each first switching element 11 and the electrodes 123 of each second switching element 12.

[0178] 20 and 21 show a semiconductor device A18 according to an eighth modification of the first embodiment. The semiconductor device A18 differs from the semiconductor device A1 in the following respects. That is, as shown in FIGS. 20 and 21, the planar sizes of the first switching elements 11 and the third switching elements 21 are larger.

[0179] As described above, each first switching element 11 contains Si as a semiconductor material, and each second switching element 12 contains SiC as a semiconductor material. In this configuration, if each first switching element 11 and each second switching element 12 have the same size in a plan view, the on-resistance of the first switching element 11 may be larger than the on-resistance of the second switching element 12. Therefore, in the semiconductor device A18, as shown in FIG. 20 , the size in a plan view of the first switching element 11 is made larger than the size in a plan view of the first switching element 11 of the semiconductor device A1. As a result, the on-resistance of the first switching element 11 is reduced, and its characteristic value becomes closer to the on-resistance of the second switching element 12.

[0180] Similarly, each third switching element 21 contains Si as a semiconductor material, and each fourth switching element 22 contains SiC as a semiconductor material. In this configuration, if each third switching element 21 and each fourth switching element 22 have the same planar size, the on-resistance of the third switching element 21 may be larger than the on-resistance of the fourth switching element 22. Therefore, in the semiconductor device A18, as shown in FIG. 21 , the planar size of the third switching element 21 is made larger than the planar size of the third switching element 21 of the semiconductor device A1. This reduces the on-resistance of the third switching element 21, resulting in a characteristic value close to the on-resistance of the fourth switching element 22.

[0181] The semiconductor device A18 according to this modification also achieves the same effects as the semiconductor device A1. Furthermore, as can be seen from this modification, the semiconductor device according to the present disclosure is not limited to a configuration in which the first switching element 11 and the second switching element 12 have the same size in a planar view, but also includes a configuration in which the first switching element 11 and the second switching element 12 have different sizes in a planar view. The same applies to the third switching element 21 and the fourth switching element 22.

[0182] 22 to 24 show a semiconductor device A2 according to the second embodiment. As shown in these figures, the semiconductor device A2 includes a plurality of first switch sections 1, a plurality of second switch sections 2, a first control element 8A, a second control element 8B, a plurality of electronic components 89U, 89V, and 89W, a plurality of leads 3A to 3G, and 3Z, a plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R, a support substrate 51, a wiring pattern 52, a plurality of connecting members 6, and a sealing member 7. In other words, the semiconductor device A2 differs from the semiconductor device A1 mainly in that it further includes a wiring pattern 52.

[0183] The wiring pattern 52 is formed on the first surface 511 of the support substrate 51. The wiring pattern 52 is made of a conductive material. The wiring pattern 52 is covered with a sealing member 7. The wiring pattern 52 includes a plurality of wiring portions 52A to 52H, 52J to 52N, and 52P to 52R and a plurality of bonding portions 53A to 53D.

[0184] Each of the plurality of wiring portions 52A to 52H, 52J to 52N, and 52P to 52R is formed on a support substrate 51. In this embodiment, the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R are formed on a first surface 511 of the support substrate 51. The wiring portions 52A to 52H, 52J to 52N, and 52P to 52R are made of a conductive material. The conductive material constituting the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R is not particularly limited, but examples include materials containing Ag, Cu, and Au. In the following description, a case in which the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R contain Ag will be described as an example. The wiring portions 52A to 52H, 52J to 52N, and 52P to 52R may contain Cu instead of Ag, or Au instead of Ag or Cu. Alternatively, the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R may contain Ag-Pt or Ag-Pd. The method for forming the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R is not limited, and they may be formed, for example, by printing a paste containing these metals and then firing the printed paste.

[0185] Among the multiple wiring portions 52A to 52H, 52J to 52N, and 52P to 52R, wiring portion 52H and wiring portion 52R are integrally formed, and the remaining wiring portions are spaced apart. Unlike this example, wiring portion 52H and wiring portion 52R may be spaced apart from each other.

[0186] As shown in FIG. 22, the wiring portion 52A, the wiring portion 52B, and the wiring portion 52C are arranged on the x1 side in the x direction with respect to the wiring portion 52D.

[0187] 22, a wire 6L connected to the second control element 8B and an electronic component 89U are joined to the wiring portion 52A. Also, a lead 4A is joined to the wiring portion 52A.

[0188] 22, a wire 6L joined to the second control element 8B and an electronic component 89V are joined to the wiring portion 52B. A lead 4B is also joined to the wiring portion 52B.

[0189] 22, a wire 6L joined to the second control element 8B and an electronic component 89W are joined to the wiring portion 52C. A lead 4C is also joined to the wiring portion 52C.

[0190] 22, the wiring portion 52D is disposed on the x2 side in the x direction relative to the wiring portion 52C. A wire 6L, which is joined to the second control element 8B, is joined to the wiring portion 52D. A lead 4D is also joined to the wiring portion 52D.

[0191] 22, the wiring portions 52E, 52F, and 52G are arranged on the x2 side in the x direction with respect to the wiring portion 52D. A wire 6L that is joined to the second control element 8B is joined to each of the wiring portions 52E, 52F, and 52G. Furthermore, as shown in FIG. 22, each of the wiring portions 52E, 52F, and 52G is joined to a corresponding one of the leads 4E, 4F, and 4G.

[0192] The second control element 8B is mounted on the wiring portion 52H. A lead 4H is also joined to the wiring portion 52H. As shown in FIG. 22 , the wiring portion 52H includes a pad portion 521H. The pad portion 521H is a portion of the wiring portion 52H to which the second control element 8B is joined. The pad portion 521H has a rectangular shape in a plan view. As shown in FIG. 22 , a portion of the pad portion 521H is sandwiched between the two mounting portions 311A ​​and 313A in the y direction. The second control element 8B is disposed in a region of the pad portion 521H sandwiched between the two mounting portions 311A ​​and 313A.

[0193] The first control element 8A is mounted on the wiring portion 52R. A lead 4R is also joined to the wiring portion 52R. As shown in FIG. 22 , the wiring portion 52R includes a pad portion 521R. The pad portion 521R is a portion of the wiring portion 52R to which the first control element 8A is joined. The pad portion 521R has a rectangular shape in a plan view. As shown in FIG. 22 , a portion of the pad portion 521R is sandwiched between the two mounting portions 31B and 31D in the y direction. The first control element 8A is disposed in a region of the pad portion 521R sandwiched between the two mounting portions 31B and 31D.

[0194] 22 , the plurality of wiring portions 52Q, 52J, 52K, 52L, 52M, and 52N are disposed on the x2 side in the x direction with respect to the wiring portion 52H. A wire 6L, which is joined to the first control element 8A, is joined to each of the plurality of wiring portions 52Q, 52J, 52K, 52L, 52M, and 52N. Furthermore, as shown in FIG. 22 , a corresponding one of the plurality of leads 4Q, 4J, 4K, 4L, 4M, and 4N is joined to each of the plurality of wiring portions 52Q, 52J, 52K, 52L, 52M, and 52N.

[0195] 22, the leads 4P are joined to the wiring portion 52P. In this embodiment, the wires 6L are not joined to the wiring portion 52P.

[0196] As shown in FIG. 22, the portions of the wiring portions 52A to 52H, 52J to 52N, 52P to 52R to which the leads 4A to 4H, 4J to 4N, 4P to 4R corresponding to the wiring portions 52A to 52H, 52J to 52N, 52P to 52R are joined are arranged along the periphery of the support substrate 51 in a plan view.

[0197] The plurality of bonding portions 53A to 53D are each formed on the support substrate 51. As shown in FIG. 24 , each of the bonding portions 53A to 53D is formed on the first surface 511 of the support substrate 51, similar to each of the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R. As shown in FIG. 24 , the bonding portion 53A is arranged below the plurality of mounting portions 311A, 312A, and 313A of the lead 3A (on the z2 side in the z direction), the bonding portion 53B is arranged below the mounting portion 31B of the lead 3B (on the z2 side in the z direction), the bonding portion 53C is arranged below the mounting portion 31C of the lead 3C (on the z2 side in the z direction), and the bonding portion 53D is arranged below the mounting portion 31D of the lead 3D (on the z2 side in the z direction). The materials constituting each of the joints 53A-53D are not particularly limited and are made of a material capable of bonding the support substrate 51 and each of the leads 3A-3D. Each of the joints 53A-53D is made of, for example, a conductive material. The conductive material constituting each of the joints 53A-53D is not particularly limited, but examples include Ag, Cu, Au, etc. Each of the joints 53A-53D contains the same conductive material as that constituting each of the wiring portions 52A-52H, 52J-52N, and 52P-52R. Note that each of the joints 53A-53D may contain copper instead of silver, or may contain gold instead of silver or copper. Alternatively, each of the joints 53A-53D may contain Ag-Pt or Ag-Pd. The method for forming each of the bonding portions 53A to 53D is not limited, and for example, like the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R, they can be formed by printing a paste containing these metals and then firing it. Note that the material of each of the bonding portions 53A to 53D does not have to be conductive. Furthermore, the wiring pattern 52 does not have to include each of the multiple bonding portions 53A to 53D.

[0198] In the semiconductor device A2, the plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R are each joined to a wiring pattern 52. In addition, compared to the semiconductor device A1, the semiconductor device A2 further includes a lead 4Z.

[0199] 22, multiple leads 4A to 4H, 4J to 4N, and 4P to 4R are arranged on the x2 side in the x direction with respect to lead 4Z. While lead 4A will be described in detail below, the other leads 4B to 4H, 4J to 4N, and 4P to 4R also include similar constituent parts. In this case, the "A" in each constituent part of lead 4A is replaced with "B" to "H," "J" to "N," and "P" to "R," respectively, to form the constituent parts of each of leads 4B to 4H, 4J to 4N, and 4P to 4R.

[0200] As shown in FIG. 22 and other figures, the lead 4A includes a terminal portion 42A, a connecting portion 44A, and a bonding portion 46A. The terminal portion 42A of the semiconductor device A2 is configured similarly to the terminal portion 42A of the semiconductor device A1. The connecting portion 44A connects the terminal portion 42A and the bonding portion 46A. The bonding portion 46A is bonded to the wiring portion 52A via a conductive bonding material 49. Similarly, the bonding portions 46B (46C to 46H, 46J to 46N, 46P to 46R) are bonded to the wiring portions 52B (52C to 52H, 52J to 52N, 52P to 52R) via the conductive bonding material 49. The conductive bonding material 49 may be, for example, solder, a metal paste material, or a sintered metal. As shown in FIG. 23, a through-hole 461C is formed in the bonding portion 46C. Alternatively, the through-hole 461C may not be formed in the bonding portion 46C. Although through holes are also formed in the other joints 46A, 46B, 46D to 46H, 46J to 46N, and 46P to 46R, the through holes may not necessarily be formed.

[0201] The lead 4Z is disposed on the x1 side in the x direction relative to the lead 4A. The lead 4Z is not electrically connected to any of the first switch sections 1, the second switch sections 2, the first control element 8A, and the second control element 8B. As shown in FIG. 22 , the lead 4Z includes a pad section 43Z and a protrusion 45Z. The pad section 43Z and the protrusion 45Z are connected to each other.

[0202] The pad portion 43Z is covered with the sealing member 7. As shown in Fig. 22 , the pad portion 43Z does not overlap the support substrate 51 in a plan view. As shown in Fig. 22 , the protrusion 45Z extends from the pad portion 43Z toward the y1 side in the y direction and protrudes from the sealing member 7.

[0203] The semiconductor device A2 according to this embodiment can also achieve the same effects as the semiconductor device A1. For example, like the semiconductor device A1, the semiconductor device A2 has a more preferable structure in a configuration in which a plurality of switching elements (the first switching element 11 and the second switching element 12) are operated as a single first switch section 1.

[0204] The semiconductor device A2 includes a support substrate 51 and a wiring pattern 52 formed on a first surface 511. The wiring pattern 52 includes multiple wiring portions 52A-52H, 52J-52N, and 52P-52R. The multiple wiring portions 52A-52H, 52J-52N, and 52P-52R transmit control signals (e.g., the first input signal and the second input signal) used by the first control element 8A and the second control element 8B to control the multiple first switch sections 1 and the multiple second switch sections 2, forming a transmission path for the control signals. The multiple wiring portions 52A-52H, 52J-52N, and 52P-52R are formed, for example, by printing a paste containing Ag and then firing it. This configuration allows for thinner and denser transmission paths for the control signal transmission paths compared to when the transmission paths are formed using, for example, a metal lead frame. Therefore, the semiconductor device A2 can be highly integrated.

[0205] 25 to 27 show a semiconductor device A3 according to the third embodiment. The semiconductor device A3 differs from the semiconductor device A2 in the following respects. Specifically, as shown in FIGS. 25 and 26, the arrangement of the first switching element 11B, the second switching element 12B, and the first protection element 13B in the second arm 1B is different. Furthermore, as shown in FIGS. 25 and 27, the arrangement of the third switching element 21B, the fourth switching element 22B, and the second protection element 23B in the fifth arm 2B is different.

[0206] In the semiconductor device A3, the first switching element 11B, the second switching element 12B, and the first protection element 13B are arranged along the x direction, as shown in Fig. 26. In this configuration, the edge 302 of the mounting portion 31C is located further on the y2 side in the y direction than the edge 301 of the mounting portion 31B and the edge 303 of the mounting portion 31D.

[0207] Similarly, in semiconductor device A3, as shown in Fig. 27, third switching element 21B, fourth switching element 22B, and second protection element 23B are arranged along the x direction. In this configuration, as shown in Fig. 27, edge 305 of mounting portion 312A is located further toward the y2 side in the y direction than edge 304 of mounting portion 311A ​​and edge 306 of mounting portion 313A. As a result, not only second control element 8B but also electronic components 89U, 89V, and 89W are arranged between the two mounting portions 311A ​​and 313A in the y direction, as shown in Fig. 27.

[0208] The semiconductor device A3 according to this embodiment also achieves the same effects as the semiconductor device A1. For example, like the semiconductor device A1, the semiconductor device A3 has a more preferable structure in a configuration in which multiple switching elements (first switching element 11 and second switching element 12) operate as a single first switch unit 1. Furthermore, in the semiconductor device A3, as shown in FIG. 27 , not only the second control element 8B but also the electronic components 89U, 89V, and 89W are arranged between the two mounting portions 311A ​​and 313A in the y direction, making it possible to further reduce the dimension in the y direction.

[0209] 28 to 31 show a semiconductor device A4 according to the fourth embodiment. The semiconductor device A4 differs from the semiconductor device A1 in the following respects. That is, as shown in FIGS. 28, 29, and 31, each first switch section 1 does not have a first protection element 13. Furthermore, as shown in FIGS. 28, 30, and 31, each second switch section 2 does not have a second protection element 23.

[0210] The first switching element 11 of each first switch unit 1 is a reverse-conducting IGBT and includes a switching function unit and a diode function unit as shown in FIG. 31 . The switching function unit operates as an IGBT, and the diode function unit operates as a freewheeling diode. That is, each first switching element 11 of this embodiment incorporates a diode function unit (freewheeling diode). For example, each first switching element 11 is a semiconductor device A1 in which the first switching element 11 and the first protection element 13 are integrated into a single chip, and incorporates a diode function unit (freewheeling diode). As shown in FIG. 31 , in each first switching element 11, the switching function unit and the diode function unit are electrically connected in an anti-parallel relationship.

[0211] Similarly, the third switching element 21 of each second switch unit 2 is a reverse-conducting IGBT and includes a switching function unit and a diode function unit, as shown in FIG. 31 . The switching function unit operates as an IGBT, and the diode function unit operates as a freewheeling diode. That is, each third switching element 21 of this embodiment has a built-in diode function unit (freewheeling diode). For example, each third switching element 21 is a single chip that combines the third switching element 21 and the second protection element 23 of the semiconductor device A1. As shown in FIG. 31 , in each third switching element 21, the switching function unit and the diode function unit are electrically connected in an anti-parallel relationship.

[0212] The semiconductor device A4 according to this embodiment also achieves the same effects as the semiconductor device A1. For example, like the semiconductor device A1, the semiconductor device A4 has a more preferable structure in a configuration in which a plurality of switching elements (the first switching element 11 and the second switching element 12) are operated as a single first switch section 1.

[0213] Each of the semiconductor devices A2 to A4 may be configured in the same manner as each of the modified examples of the semiconductor device A1, to the extent that no technical contradiction occurs. For example, in Figure 22 and Figures 25 to 30, each of the first switching elements 11 and each of the third switching elements 21, which have an increased size in a plan view, are shown by imaginary lines, as in the eighth modified example of the first embodiment.

[0214] In each of the above-described embodiments and modifications, it is possible to further reduce surplus portions of the mounting portions 311A, 312A, 313A, 31B, 31C, and 31D that do not mount any of the plurality of first switching elements 11, the plurality of second switching elements 12, the plurality of first protection elements 13, the plurality of third switching elements 21, the plurality of fourth switching elements 22, and the plurality of second protection elements 23. Reducing the surplus portions in this way is preferable in terms of reducing the size of the semiconductor device in a plan view.

[0215] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. For example, the present disclosure includes the embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a plurality of first switch sections each having a first switching element and a second switching element; a first control element that inputs a first drive signal to the first switching element and the second switching element of each of the plurality of first switch sections; at least one lead on which the first switching element and the second switching element of each of the plurality of first switch sections are mounted; a plurality of first connection members respectively joined to the first control element and the first switching element of each of the plurality of first switch sections; and a plurality of second connection members respectively joined to the first control element and the second switching element of each of the plurality of first switch sections, wherein in the plurality of first switch sections, the first switching element and the second switching element are electrically connected in parallel to each other and are of different types, and the first switching element and the second switching element of each of the plurality of first switch sections are arranged to surround the first control element when viewed in the thickness direction. The semiconductor device according to Supplementary Note 1, wherein the first switching element of each of the plurality of first switch units is an IGBT, and the second switching element of each of the plurality of first switch units is a MOSFET. Supplementary Note 3. The semiconductor device according to Supplementary Note 1 or Supplementary Note 2, wherein each of the plurality of first switch units includes a diode function unit. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein, in each of the plurality of first switch units, the diode function unit is built into the first switching element. Supplementary Note 5. The semiconductor device according to Supplementary Note 3, wherein, in each of the plurality of first switch units, the diode function unit is formed of an element different from each of the first switching element and the second switching element.Supplementary Note 6. The semiconductor device according to any one of Supplementary Note 1 to Supplementary Note 5, wherein the plurality of first switch sections include a first arm, a second arm, and a third arm each having a first switching element and a second switching element, the first arm, the second arm, and the third arm are arranged in a first direction perpendicular to the thickness direction, and the second arm is located between the first arm and the third arm in the first direction. Supplementary Note 7. The semiconductor device according to Supplementary Note 6, wherein the first switching element and the second switching element in each of the first arm and the third arm are aligned in a second direction perpendicular to the thickness direction and the first direction, and the first switching element and the second switching element in the second arm are aligned in the first direction. Supplementary Note 8. Supplementary Note 7: The semiconductor device according to Supplementary Note 7, wherein the at least one lead includes a first mounting portion, a second mounting portion, and a third mounting portion, wherein the first switching element and the second switching element of the first arm are mounted on the first mounting portion, the first switching element and the second switching element of the second arm are mounted on the second mounting portion, and the first switching element and the second switching element of the third arm are mounted on the third mounting portion.Supplementary Note 9: The semiconductor device according to Supplementary Note 8, wherein the first control element is located on one side in the second direction of an edge of the second mounting portion on one side in the second direction, and the edge of the second mounting portion on one side in the second direction is located on the other side in the second direction of an edge of the first mounting portion on one side in the second direction and an edge of the third mounting portion on one side in the second direction.Supplementary Note 10: The semiconductor device according to Supplementary Note 8, wherein the first control element is located on one side in the second direction of an edge of the first mounting portion on one side in the second direction and an edge of the third mounting portion on one side in the second direction. Supplementary Note 9: The semiconductor device according to Supplementary Note 9, wherein an edge of the first control element on the other side in the second direction is located between an edge of the first mounting portion on one side in the second direction and an edge of the third mounting portion on one side in the second direction, and an edge of the second mounting portion on one side in the second direction. Supplementary Note 11: The semiconductor device according to any of Supplementary Note 8 to Supplementary Note 10, wherein the at least one lead includes a first lead, a second lead, and a third lead that are spaced apart from one another, the first lead includes the first mounting portion, the second lead includes the second mounting portion, and the third lead includes the third mounting portion.Supplementary Note 12. The semiconductor device according to any one of Supplementary Note 6 to Supplementary Note 11, further comprising: a plurality of second switch units, each having a third switching element and a fourth switching element; and a second control element that inputs a second drive signal to the third switching element and the fourth switching element of each of the plurality of second switch units. Supplementary Note 13. The semiconductor device according to Supplementary Note 12, wherein the plurality of second switch units include a fourth arm, a fifth arm, and a sixth arm, each having a third switching element and a fourth switching element, the fourth arm, the fifth arm, and the sixth arm being arranged in a first direction perpendicular to the thickness direction, and the fifth arm being located between the fourth arm and the sixth arm in the first direction. Supplementary Note 14. The semiconductor device according to Supplementary Note 13, wherein, in each of the fourth arm and the sixth arm, the third switching element and the fourth switching element are aligned in a second direction perpendicular to the thickness direction and the first direction, and in the fifth arm, the third switching element and the fourth switching element are aligned in the first direction. Supplementary Note 15. Supplementary Note 14: The semiconductor device according to Supplementary Note 14, wherein the at least one lead includes a fourth mounting portion, a fifth mounting portion, and a sixth mounting portion, wherein the third switching element and the fourth switching element of the fourth arm are mounted on the fourth mounting portion, the third switching element and the fourth switching element of the fifth arm are mounted on the fifth mounting portion, and the third switching element and the fourth switching element of the sixth arm are mounted on the sixth mounting portion.Supplementary Note 16: The semiconductor device according to Supplementary Note 15, wherein the at least one lead includes a fourth lead, wherein the fourth lead includes the fourth mounting portion, the fifth mounting portion, and the sixth mounting portion.Supplementary Note 17. The semiconductor device according to any one of Supplementary Note 13 to Supplementary Note 16, wherein the first arm is a lower arm, the fourth arm is an upper arm, and the first arm and the fourth arm are electrically connected in series to form a first phase of a three-phase AC circuit, the second arm is a lower arm, and the fifth arm is an upper arm, and the second arm and the fifth arm are electrically connected in series to form a second phase of the three-phase AC circuit, and the third arm is a lower arm, and the sixth arm is an upper arm, and the third arm and the sixth arm are electrically connected in series to form a third phase of the three-phase AC circuit.

[0216] A1, A11 to A18, A2, A3, A4: semiconductor device 10U: first phase 10V: second phase 10W: third phase 1: first switch section 1A: first arm 1B: second arm 1C: third arm 11, 11A, 11B, 11C: first switching element 11a: element main surface 11b: element back surface 111, 112, 113: electrodes 12, 12A, 12B, 12C: second switching element 12a: element main surface 12b: element back surface 121, 122, 123: electrodes 13, 13A, 13B, 13C: first protection element 13a: element main surface 13b: element back surface 131, 132: electrodes 19: conductive bonding material 2: second switch section 2A: fourth arm 2B: fifth arm 2C: Sixth arm 21, 21A, 21B, 21C: Third switching element 21a: Element main surface 21b: Element back surface 211, 212, 213: Electrodes 22, 22A, 22B, 22C: Fourth switching element 22a: Element main surface 22b: Element back surface 221, 222, 223: Electrodes 23, 23A, 23B, 23C: Second protection element 23a: Element main surface 23b: Element back surface 231, 232: Electrodes 29: Conductive bonding material 3A to 3G, 3Z: Leads 301 to 306: Edges 311A, 312A, 313A, 31B to 31D: Mounting portion 32A to 32G, 32Z: Terminal portion 33A to 33G, 33Z: Pad portion 34A to 34D: Connecting portion 39: Bonding material 4A to 4H, 4J to 4N, 4P to 4R, 4Z: Leads 41H, 41R: Mounting portion 42A to 42H, 42J to 42N, 42P to 42R: Terminal portion 43A to 43H, 43J to 43N, 43P to 43R, 43Z: Pad portion 44A to 44H, 44J to 44N, 44P to 44R: Linking portion 45H: Protruding portion 45Z: Protruding portion 46A to 46H, 46J to 46N, 46P to 46R: Bonding portion 461C: Through hole 49: Conductive bonding material 51: Support substrate 511: First surface 512: Second surface 513: Third surface 514: Fourth surface 515: Fifth surface 516: Sixth surface 52: Wiring pattern 52A to 52H, 52J to 52N, 52P to 52R: Wiring portion 521H, 521R: Pad portion 53A to 53D: Joint portion 6: Connection member 6A to 6H, 6J to 6N,6P to 6R: Wires 7: Sealing member 71: Resin main surface 72: Resin back surface 73 to 76: Resin side surface 731, 741, 761: Recess 8A: First control element 8B: Second control element 81, 82, 83: Electrodes 85: Bonding material 89U, 89V, 89W: Electronic components 891: Conductive bonding material,

Claims

1. a plurality of first switch units each having a first switching element and a second switching element; a first control element that inputs a first drive signal to the first switching element and the second switching element of each of the plurality of first switch units; at least one lead on which the first switching element and the second switching element of each of the plurality of first switch units are mounted; a plurality of first connection members respectively connected to the first control element and the first switching element of each of the plurality of first switch sections; a plurality of second connection members respectively connected to the first control element and the second switching element of each of the plurality of first switch sections; Equipped with In the plurality of first switch units, the first switching element and the second switching element are electrically connected in parallel to each other and are different types from each other, the first switching element and the second switching element of each of the plurality of first switch sections are arranged to surround the first control element when viewed in a thickness direction.

2. the first switching element of each of the plurality of first switch units is an IGBT, The semiconductor device according to claim 1 , wherein the second switching element of each of the plurality of first switch sections is a MOSFET.

3. The semiconductor device according to claim 1 , wherein each of said plurality of first switch sections includes a diode function section.

4. The semiconductor device according to claim 3 , wherein in each of said plurality of first switch sections, said diode function section is built in said first switching element.

5. 4 . The semiconductor device according to claim 3 , wherein in each of said plurality of first switch sections, said diode function section is formed of an element different from each of said first switching element and said second switching element.

6. the plurality of first switch units include a first arm, a second arm, and a third arm each having a first switching element and a second switching element; the first arm, the second arm, and the third arm are arranged in a first direction perpendicular to the thickness direction, The semiconductor device according to claim 1 , wherein the second arm is located between the first arm and the third arm in the first direction.

7. In each of the first arm and the third arm, the first switching element and the second switching element are aligned in the thickness direction and in a second direction perpendicular to the first direction, The semiconductor device according to claim 6 , wherein in the second arm, the first switching element and the second switching element are aligned in the first direction.

8. the at least one lead includes a first mounting portion, a second mounting portion, and a third mounting portion; a first switching element and a second switching element of the first arm are mounted on the first mounting portion, a first switching element and a second switching element of the second arm are mounted on the second mounting portion, The semiconductor device according to claim 7 , wherein a first switching element and a second switching element of the third arm are mounted on the third mounting portion.

9. the first control element is located on one side in the second direction relative to an edge of the second mounting portion on one side in the second direction, 9. The semiconductor device according to claim 8, wherein an edge on one side of the second direction of the second mounting portion is located on the other side of the second direction than an edge on one side of the first mounting portion in the second direction and an edge on one side of the third mounting portion in the second direction.

10. 10. The semiconductor device of claim 9, wherein an edge on the other side in the second direction of the first control element is located between an edge on one side in the second direction of the first mounting portion and an edge on one side in the second direction of the third mounting portion, and an edge on one side in the second direction of the second mounting portion.

11. the at least one lead includes a first lead, a second lead, and a third lead spaced apart from one another; the first lead includes the first mounting portion, the second lead includes the second mounting portion, The semiconductor device according to claim 8 , wherein the third lead includes the third mounting portion.

12. a plurality of second switch units each having a third switching element and a fourth switching element; a second control element that inputs a second drive signal to the third switching element and the fourth switching element of each of the plurality of second switch units; 12. The semiconductor device according to claim 6, further comprising:

13. the plurality of second switch units include a fourth arm, a fifth arm, and a sixth arm each having a third switching element and a fourth switching element; the fourth arm, the fifth arm, and the sixth arm are arranged in a first direction perpendicular to the thickness direction, The semiconductor device according to claim 12 , wherein the fifth arm is located between the fourth arm and the sixth arm in the first direction.

14. In each of the fourth arm and the sixth arm, the third switching element and the fourth switching element are aligned in a second direction perpendicular to the thickness direction and the first direction, The semiconductor device according to claim 13 , wherein in said fifth arm, said third switching element and said fourth switching element are aligned in said first direction.

15. the at least one lead includes a fourth mounting portion, a fifth mounting portion, and a sixth mounting portion; a third switching element and a fourth switching element of the fourth arm are mounted on the fourth mounting portion, a third switching element and a fourth switching element of the fifth arm are mounted on the fifth mounting portion, The semiconductor device according to claim 14 , wherein a third switching element and a fourth switching element of the sixth arm are mounted on the sixth mounting portion.

16. the at least one lead includes a fourth lead; The semiconductor device according to claim 15 , wherein the fourth lead includes the fourth mounting portion, the fifth mounting portion, and the sixth mounting portion.

17. the first arm is a lower arm, and the fourth arm is an upper arm, the first arm and the fourth arm are electrically connected in series to constitute a first phase of a three-phase AC circuit, the second arm is a lower arm, and the fifth arm is an upper arm, the second arm and the fifth arm are electrically connected in series to form a second phase of the three-phase AC circuit, 14. The semiconductor device according to claim 13, wherein the third arm is a lower arm and the sixth arm is an upper arm, the third arm and the sixth arm being electrically connected in series to constitute a third phase of the three-phase AC circuit.