Semiconductor device

Abstract

This semiconductor device comprises a first switch part, a first control element, a mounting part, and first to third wires. The first switch part has a first switching element and a second switching element. The first switching element and the second switching element are electrically connected in parallel to each other. The first switching element has a first electrode. The second switching element has a second electrode and a main surface wiring part. The first wire is joined to the first control element and the main surface wiring part, and the second wire is joined to the main surface wiring part and the first electrode. The third wire is joined to the first control element and the second electrode.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices including switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. For example, Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device described in Patent Document 1 is an intelligent power module (hereinafter referred to as "IPM") used for driving and controlling a motor, for example. The semiconductor device includes a power semiconductor chip as the switching element. The power semiconductor chip is an IGBT, a MOSFET, or the like.

[0003] Japanese Patent Application Laid-Open No. 2020-4893

[0004] In semiconductor devices, one switching element may be connected in parallel to other switching elements, and these switching elements may be operated as a single switch unit. For example, multiple switching elements may be connected in parallel and switched for purposes such as ensuring the allowable current of the semiconductor device, suppressing the voltage and current input to the switching elements, or suppressing power loss. However, the semiconductor device described in Patent Document 1 still has room for improvement when connecting each switching element to other switching elements in parallel.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device having a more preferable structure in a configuration in which multiple switching elements connected in parallel with each other operate as a single switch unit.

[0006] One aspect of the present disclosure provides a semiconductor device comprising: at least one first switch section, each first switch section including a first switching element and a second switching element; a first control element that inputs a first drive signal to the first switching element and the second switching element; a mounting section on which the first switching element and the second switching element are mounted; and a plurality of wires, including a first wire, a second wire, and a third wire. In each of the at least one first switch section, the first switching element and the second switching element are electrically connected in parallel, the first switching element has a first main surface facing one side in a thickness direction of the mounting section and a first control electrode disposed on the first main surface, and the second switching element has a second main surface facing one side in the thickness direction and a second control electrode and a main surface wiring section disposed on the second main surface. The first wire is bonded to the first control element and the main surface wiring section, and the second wire is bonded to the main surface wiring section and the first control electrode. The third wire is bonded to the first control element and the second control electrode. The first control element is disposed on one side of the first switching element and the second switching element in a first direction perpendicular to the thickness direction. The second switching element is disposed between the first control element and the first switching element in the first direction.

[0007] According to the above configuration, it is possible to provide a more preferable structure in a configuration in which a plurality of switching elements connected in parallel with each other are operated as one switch section.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment. FIG. 3 is a view showing the plan view of FIG. 2, with a sealing member indicated by imaginary lines. FIG. 4 is a partial enlarged view of a portion of FIG. 3. FIG. 5 is a partial enlarged view of a portion of FIG. 4. FIG. 6 is a partial enlarged view of a portion of FIG. 3. FIG. 7 is a partial enlarged view of a portion of FIG. 6. FIG. 8 is a front view showing the semiconductor device according to the first embodiment. FIG. 9 is a side view (right side view) showing the semiconductor device according to the first embodiment. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3. FIG. 14 is a diagram showing an example of a circuit configuration of the semiconductor device according to the first embodiment. FIG. 15 is a plan view showing a semiconductor device according to a second embodiment, with a sealing member indicated by imaginary lines. FIG. 16 is a partially enlarged view of a portion of FIG. 15 . FIG. 17 is a partially enlarged view of a portion of FIG. 15 . FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 15 . FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 15 . FIG. 20 is a cross-sectional view showing a semiconductor device according to a modified example of the second embodiment. FIG. 21 is an enlarged plan view of a main portion of a semiconductor device according to a third embodiment. FIG. 22 is an enlarged plan view of a main portion of a semiconductor device according to the third embodiment. FIG. 23 is an enlarged plan view of a main portion of a semiconductor device according to a modified example of the third embodiment. FIG. 24 is a plan view showing a semiconductor device according to a fourth embodiment, with the sealing member indicated by imaginary lines. FIG. 25 is an enlarged plan view of a portion of FIG. 24 . FIG. 26 is an enlarged plan view of a portion of FIG. 24 . FIG. 27 is a diagram showing an example of a circuit configuration of a semiconductor device according to the fourth embodiment. FIG. 28 is an enlarged plan view of a main portion showing another example of the configuration of the main surface wiring portion. Fig. 29 is an enlarged plan view of a main portion showing another example of the configuration of the main surface wiring portion. Fig. 30 is an enlarged plan view of a main portion showing another example of the configuration of the main surface wiring portion. Fig. 31 is an enlarged plan view of a main portion showing another example of the configuration of the main surface wiring portion. Fig. 32 is an enlarged plan view of a main portion showing another example of the configuration of the main surface wiring portion. Fig. 33 is an enlarged plan view of a main portion showing another example of the configuration of the main surface wiring portion.FIG. 34 is an enlarged plan view of a main part showing another example of the configuration of the main surface wiring portion.

[0009] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar components will be designated by the same reference numerals, and redundant descriptions will be omitted. Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not intended to necessarily assign any order to their objects.

[0010] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an) object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an) object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on (an) object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an) object B" includes "a certain object A is in contact with a certain object B and is located on (an) object B" and "a certain object A is located on (an) object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "when viewed from a certain direction, an object A overlaps an object B" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B."

[0011] 1 to 14 show a semiconductor device A1 according to a first embodiment. The semiconductor device A1 includes a plurality of first switch sections 1, a plurality of second switch sections 2, a plurality of leads 3A to 3G, and 3Z, a plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R, a support substrate 51, a plurality of connecting members 6, a sealing member 7, a first control element 8A, a second control element 8B, and a plurality of electronic components 89U, 89V, and 89W. The connecting members 6 include a plurality of wires 6A to 6F, 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q. The semiconductor device A1 may be used, for example, as an IPM (Integrated Power Module) for driving and controlling a motor, without particular limitation.

[0012] For convenience of explanation, three mutually orthogonal directions, the x direction, the y direction, and the z direction, will be referred to. The z direction is the thickness direction of the semiconductor device A1. In the following explanation, one side of the z direction may be referred to as the upper side, and the other side as the lower side. Note that terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component in the z direction and do not necessarily define the relationship with the direction of gravity. Furthermore, "plan view" refers to the view from the z direction. The x direction is the left-right direction in the plan view of the semiconductor device A1 (see FIGS. 2 and 3). The y direction is the up-down direction in the plan view of the semiconductor device A1 (see FIGS. 2 and 3). In this embodiment, the x direction is an example of the "second direction" described in the claims, and the y direction is an example of the "first direction" described in the claims. Note that one side of the x direction is referred to as the x1 side of the x direction, and the other side of the x direction is referred to as the x2 side of the x direction. One side in the y direction is referred to as the y1 side of the y direction, the other side in the y direction is referred to as the y2 side of the y direction, and one side in the z direction is referred to as the z1 side of the z direction, and the other side in the z direction is referred to as the z2 side of the z direction.

[0013] The plurality of first switch sections 1 and the plurality of second switch sections 2 are elements that perform the electrical functions of the semiconductor device A1. In the semiconductor device A1, as shown in Figure 14, the plurality of first switch sections 1 and the plurality of second switch sections 2 form a three-phase AC inverter circuit.

[0014] 3, 4, and 14, the plurality of first switch units 1 include a first arm 1A, a second arm 1B, and a third arm 1C. As shown in Fig. 4, the first arm 1A, the second arm 1B, and the third arm 1C are arranged along the x direction. The second arm 1B is located between the first arm 1A and the third arm 1C in the x direction. Each of the plurality of first switch units 1 (first arm 1A, second arm 1B, and third arm 1C) switches between an on state and an off state in response to a first drive signal from a first control element 8A.

[0015] Each of the multiple first switch units 1 (first arm 1A, second arm 1B, and third arm 1C) has a switching element 11, a switching element 12, and a protection element 13. For ease of explanation, the switching elements 11 of the first arm 1A, second arm 1B, and third arm 1C will be referred to as switching element 11A, switching element 11B, and switching element 11C, respectively. Furthermore, the switching elements 12 of the first arm 1A, second arm 1B, and third arm 1C will be referred to as switching element 12A, switching element 12B, and switching element 12C, respectively, and the protection elements 13 of the first arm 1A, second arm 1B, and third arm 1C will be referred to as protection element 13A, protection element 13B, and protection element 13C, respectively. Unless otherwise specified, the switching elements 11, switching elements 12, and protection elements 13 described below are common to each of the first switch units 1 (first arm 1A, second arm 1B, and third arm 1C).

[0016] The switching element 11 and the switching element 12 are each a power semiconductor element and have a switching function. The switching element 11 and the switching element 12 are, for example, an IGBT, a bipolar transistor, a MOSFET, or a HEMT (High Electron Mobility Transistor). The switching elements 11 and the switching element 12 are different types. In this disclosure, the types of switching elements are classified according to their structural differences, such as an IGBT, a bipolar transistor, a MOSFET, and a HEMT. As shown in FIG. 14 , in the semiconductor device A1, the switching element 11 is an IGBT and the switching element 12 is a MOSFET. Alternatively, the switching element 11 may be a MOSFET and the switching element 12 may be an IGBT. The switching elements 11 and the switching element 12 each include a semiconductor material. Examples of the semiconductor material include silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), and gallium nitride (GaN). In the semiconductor device A1, the switching element 11 contains Si as a semiconductor material, and the switching element 12 contains SiC as a semiconductor material. Unlike this example, the switching element 11 may contain SiC as a semiconductor material, and the switching element 12 may contain Si as a semiconductor material, or both the switching element 11 and the switching element 12 may contain either SiC or Si as a semiconductor material. In this embodiment, the switching element 11 is an example of a "first switching element" as defined in the claims, and the switching element 12 is an example of a "second switching element" as defined in the claims.

[0017] 10 and 12, the switching element 11 has a main surface 11a and a rear surface 11b. The main surface 11a and the rear surface 11b are spaced apart in the z direction. The main surface 11a faces upward in the z direction (toward the z1 side in the z direction), and the rear surface 11b faces downward in the z direction (toward the z2 side in the z direction). The main surface 11a and the rear surface 11b are both flat (including cases where they are approximately flat).

[0018] The switching element 11 has three electrodes 111, 112, and 113. The electrode 111 is provided on the back surface 11b of the element, and the electrodes 112 and 113 are provided on the main surface 11a of the element. The three electrodes 111, 112, and 113 are each electrically connected to the switching function unit of the switching element 11. In an example in which the switching element 11 is an IGBT, the electrode 111 is a collector, the electrode 112 is an emitter, and the electrode 113 is a gate. The switching element 11 performs a switching operation in response to a drive signal (first drive signal) input to the electrode 113. The switching operation is an operation in which the switching element 11 switches between an ON state in which a current flows between the two electrodes 111 and 112 and an OFF state in which no current flows between the two electrodes 111 and 112. When the switching element 11 is in the ON state, a forward current flows from the electrode 111 to the electrode 112. The electrode 113 is an example of a "first control electrode" as defined in the claims.

[0019] 11 and 12 , the switching element 12 has a main surface 12a and a rear surface 12b. The main surface 12a and the rear surface 12b are spaced apart in the z direction. The main surface 12a faces upward in the z direction (the z1 side in the z direction), and the rear surface 12b faces downward in the z direction (the z2 side in the z direction). The main surface 12a and the rear surface 12b are each flat (including the case where they are approximately flat).

[0020] The switching element 12 has three electrodes 121, 122, and 123. The electrode 121 is provided on the back surface 12b of the element, and the electrodes 122 and 123 are provided on the main surface 12a of the element. The three electrodes 121, 122, and 123 are each electrically connected to the switching function unit of the switching element 12. In an example in which the switching element 12 is a MOSFET, the electrode 121 is the drain, the electrode 122 is the source, and the electrode 123 is the gate. The switching element 12 performs a switching operation in response to a drive signal (first drive signal) input to the electrode 123. The switching operation is an operation in which the switching element 12 switches between an ON state in which a current flows between the two electrodes 121 and 122, and an OFF state in which no current flows between the two electrodes 121 and 122. When the switching element 12 is in the ON state, a forward current flows from the electrode 121 to the electrode 122. The electrode 123 is an example of a "second control electrode" as defined in the claims.

[0021] As shown in FIGS. 4, 5, and 11, the switching element 12 has a main surface wiring portion 125. As shown in FIG. 11, the main surface wiring portion 125 is provided on the element main surface 12a, similar to the electrode 123. The main surface wiring portion 125 is not electrically connected to the switching function portion of the switching element 12. In the illustrated example, the main surface wiring portion 125 is rectangular in plan view. Furthermore, the main surface wiring portion 125 is located on the y1 side of the center in the y direction on the element main surface 12a. As shown in FIG. 5, the main surface wiring portion 125 includes a first pad portion 125a, a second pad portion 125b, and a connecting portion 125c. The first pad portion 125a is a portion to which a wire 61G (described later) is bonded. The second pad portion 125b is a portion to which a wire 62G (described later) is bonded. The first pad portion 125a and the second pad portion 125b are arranged along the y direction in plan view. The first pad portion 125a is located closer to the y1 side in the y direction than the second pad portion 125b. The first pad portion 125a is located closer to the first control element 8A in the y direction than the second pad portion 125b. In the illustrated example, the dimension of the first pad portion 125a in the x direction and the dimension of the second pad portion 125b in the x direction are the same (or approximately the same). The connecting portion 125c connects the first pad portion 125a and the second pad portion 125b. The dimension of the connecting portion 125c in the x direction is the same (or approximately the same) as the dimensions of the first pad portion 125a and the second pad portion 125b in the x direction.

[0022] In each first switch section 1 (first arm 1A, second arm 1B, and third arm 1C), the switching element 11 and the switching element 12 are electrically connected in parallel. Specifically, the electrode 111 (collector) and the electrode 121 (drain) are electrically connected, and the electrode 112 (emitter) and the electrode 122 (source) are electrically connected.

[0023] The protection element 13 includes a diode functioning portion that functions as a freewheeling diode. In this embodiment, the protection element 13 is, for example, a Schottky barrier diode, but may be another type of diode.

[0024] 12 , the protection element 13 has an element principal surface 13 a and an element rear surface 13 b. The element principal surface 13 a and the element rear surface 13 b are spaced apart in the z direction. The element principal surface 13 a faces upward in the z direction (the z1 side in the z direction), and the element rear surface 13 b faces downward in the z direction (the z2 side in the z direction). The element principal surface 13 a and the element rear surface 13 b are each flat (including the case where they are approximately flat).

[0025] 12, the protection element 13 includes two electrodes 131 and 132. The electrode 131 is formed on the element main surface 13a, and the electrode 132 is formed on the element back surface 13b. In an example where the protection element 13 is a diode, the electrode 131 is an anode and the electrode 132 is a cathode.

[0026] In each first switch section 1 (each of the first arm 1A, the second arm 1B, and the third arm 1C), the protection element 13 is connected in anti-parallel to the switching element 11 and the switching element 12. Anti-parallel connection refers to a parallel connection state in which the forward currents of the switching elements 11 and 12 are opposite to the forward current in the protection element 13. The electrode 131 (anode) of the protection element 13 is connected to the electrode 112 (emitter) of the switching element 11 and the electrode 122 (source) of the switching element 12, and the electrode 132 (cathode) of the protection element 13 is connected to the electrode 111 (collector) of the switching element 11 and the electrode 121 (drain) of the switching element 12. As a result, in each first switch section 1, when a reverse voltage is applied to the switching element 11 and the switching element 12, a forward current flows through the protection element 13, and the reverse voltage applied to the switching element 11 and the switching element 12 is reduced.

[0027] 10 to 12, switching element 11A, switching element 12A, and protective element 13A are each bonded to lead 3B via conductive bonding material 19. Switching element 11B, switching element 12B, and protective element 13B are each bonded to lead 3C via conductive bonding material 19. Switching element 11C, switching element 12C, and protective element 13C are each bonded to lead 3D via conductive bonding material 19. These conductive bonding materials 19 are, for example, solder, metal paste, or sintered metal.

[0028] As shown in FIG. 4 , in each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the switching element 11, the switching element 12, and the protection element 13 are arranged in a line in the y direction. In the illustrated example, in each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the switching element 12, the switching element 11, and the protection element 13 are arranged in this order from the y1 side to the y2 side in the y direction. Therefore, the switching element 11 is located between the switching element 12 and the protection element 13 in the y direction. Note that in each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the positions of the switching element 11 and the switching element 12 may be reversed. In this case, a main surface wiring portion similar to the main surface wiring portion 125 is formed in the switching element 11.

[0029] The plurality of second switch units 2 include a fourth arm 2A, a fifth arm 2B, and a sixth arm 2C. As shown in FIG. 6 , the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C are arranged along the x direction. The fifth arm 2B is located between the fourth arm 2A and the sixth arm 2C in the x direction. Each of the plurality of second switch units 2 (the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C) switches between an ON state and an OFF state in response to a second drive signal from the second control element 8B.

[0030] Each of the plurality of second switch units 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C) has a switching element 21, a switching element 22, and a protection element 23. For ease of explanation, the switching elements 11 of the fourth arm 2A, fifth arm 2B, and sixth arm 2C will be referred to as switching element 21A, switching element 21B, and switching element 21C, respectively. Furthermore, the switching elements 22 of the fourth arm 2A, fifth arm 2B, and sixth arm 2C will be referred to as switching element 22A, switching element 22B, and switching element 22C, respectively, and the protection elements 23 of the fourth arm 2A, fifth arm 2B, and sixth arm 2C will be referred to as protection element 23A, protection element 23B, and protection element 23C, respectively. These will be described below. Unless otherwise specified, the switching element 21, the switching element 22, and the protection element 23 are common to each second switch section 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C).

[0031] Like the switching elements 11 and 12, the switching elements 21 and 22 are power semiconductor elements and have switching function units. The switching elements 21 and 22 are, for example, an IGBT, a bipolar transistor, a MOSFET, or a HEMT. The switching elements 21 and 22 are different types. As shown in FIG. 14 , in the semiconductor device A1, the switching element 21 is an IGBT, and the switching element 22 is a MOSFET. Alternatively, the switching element 21 may be a MOSFET, and the switching element 22 may be an IGBT. The switching elements 21 and 22 each contain a semiconductor material. Examples of the semiconductor material include silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), and gallium nitride (GaN). In the semiconductor device A1, the switching element 21 contains Si as a semiconductor material, and the switching element 22 contains SiC as a semiconductor material. Unlike this example, the switching element 21 may contain SiC as a semiconductor material, and the switching element 22 may contain Si as a semiconductor material, or both the switching element 21 and the switching element 22 may contain either SiC or Si as a semiconductor material. In this embodiment, the switching element 21 is an example of a "third switching element" recited in the claims, and the switching element 22 is an example of a "fourth switching element" recited in the claims.

[0032] 10 and 13, the switching element 21 has a main surface 21a and a rear surface 21b. The main surface 21a and the rear surface 21b are spaced apart in the z direction. The main surface 21a faces upward in the z direction (toward the z1 side in the z direction), and the rear surface 21b faces downward in the z direction (toward the z2 side in the z direction). The main surface 21a and the rear surface 21b are both flat (including cases where they are approximately flat).

[0033] The switching element 21 has three electrodes 211, 212, and 213. The electrode 211 is provided on the back surface 21b of the element, and the electrodes 212 and 213 are provided on the main surface 21a of the element. The three electrodes 211, 212, and 213 are each electrically connected to the switching function unit of the switching element 21. In an example in which the switching element 21 is an IGBT, the electrode 211 is a collector, the electrode 212 is an emitter, and the electrode 213 is a gate. The switching element 21 performs a switching operation in response to a drive signal (second drive signal) input to the electrode 213. The switching operation is an operation in which the switching element 21 switches between an ON state in which a current flows between the two electrodes 211 and 212 and an OFF state in which no current flows between the two electrodes 211 and 212. When the switching element 21 is in the ON state, a forward current flows from the electrode 211 to the electrode 212. The electrode 213 is an example of a "third control electrode" as defined in the claims.

[0034] 11 and 13 , the switching element 22 has a main surface 22 a and a rear surface 22 b. The main surface 22 a and the rear surface 22 b are spaced apart in the z direction. The main surface 22 a faces upward in the z direction (toward the z1 side in the z direction), and the rear surface 22 b faces downward in the z direction (toward the z2 side in the z direction). The main surface 22 a and the rear surface 22 b are each flat (including the case where they are approximately flat).

[0035] The switching element 22 has three electrodes 221, 222, and 223. The electrode 221 is provided on the back surface 22b of the element, and the electrodes 222 and 223 are provided on the main surface 22a of the element. The three electrodes 221, 222, and 223 are each electrically connected to the switching function unit of the switching element 22. In an example in which the switching element 22 is a MOSFET, the electrode 221 is the drain, the electrode 222 is the source, and the electrode 223 is the gate. The switching element 22 performs a switching operation in response to a drive signal (second drive signal) input to the electrode 223. The switching operation is an operation in which the switching element 22 switches between an ON state in which a current flows between the two electrodes 221 and 222, and an OFF state in which no current flows between the two electrodes 221 and 222. When the switching element 22 is in the ON state, a forward current flows from the electrode 221 to the electrode 222. The electrode 223 is an example of a "fourth control electrode" set forth in the claims.

[0036] As shown in FIGS. 6 , 7 , and 11 , the switching element 22 has a main surface wiring portion 225. As shown in FIG. 11 , the main surface wiring portion 225 is provided on the element main surface 22a, similar to the electrode 223. The main surface wiring portion 225 is not electrically connected to the switching function portion of the switching element 22. In the illustrated example, the main surface wiring portion 225 is rectangular in plan view. Furthermore, the main surface wiring portion 225 is located on the y1 side of the element main surface 22a in the y direction relative to the center in the y direction. As shown in FIG. 7 , the main surface wiring portion 225 includes a third pad portion 225a, a fourth pad portion 225b, and a connecting portion 225c. The third pad portion 225a is a portion to which a wire 61Q (described later) is bonded. The fourth pad portion 225b is a portion to which a wire 62Q (described later) is bonded. The third pad portion 225a and the fourth pad portion 225b are arranged along the y direction in plan view. The third pad portion 225a is located closer to the y1 side in the y direction than the fourth pad portion 225b. The third pad portion 225a is located closer to the second control element 8B in the y direction than the fourth pad portion 225b. In the illustrated example, the dimension of the third pad portion 225a in the x direction is the same (or approximately the same) as the dimension of the fourth pad portion 225b in the x direction. The connecting portion 225c connects the third pad portion 225a and the fourth pad portion 225b. The dimension of the connecting portion 225c in the x direction is the same (or approximately the same) as the dimensions of the third pad portion 225a and the fourth pad portion 225b in the x direction.

[0037] In each second switch section 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C), the switching element 21 and the switching element 22 are electrically connected in parallel. Specifically, the electrode 211 (collector) and the electrode 221 (drain) are electrically connected, and the electrode 212 (emitter) and the electrode 222 (source) are electrically connected.

[0038] The protection element 23 includes a diode functioning portion that functions as a freewheeling diode. In this embodiment, the protection element 23 is, for example, a Schottky barrier diode.

[0039] 13 , the protection element 23 has an element principal surface 23 a and an element rear surface 23 b. The element principal surface 23 a and the element rear surface 23 b are spaced apart in the z direction. The element principal surface 23 a faces upward in the z direction (the z1 side in the z direction), and the element rear surface 23 b faces downward in the z direction (the z2 side in the z direction). The element principal surface 23 a and the element rear surface 23 b are each flat (including the case where they are approximately flat).

[0040] 13, the protection element 23 includes two electrodes 231 and 232. The electrode 231 is formed on the element main surface 23a, and the electrode 232 is formed on the element rear surface 23b. In an example where the protection element 23 is a diode, the electrode 231 is an anode and the electrode 232 is a cathode.

[0041] In each second switch section 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C), the protection element 23 is connected in anti-parallel to the switching element 21 and the switching element 22. Anti-parallel connection refers to a parallel connection state in which the forward currents of the switching elements 21 and 22 are opposite to the forward current of the protection element 23. The electrode 231 (anode) of the protection element 23 is connected to the electrode 212 (emitter) of the switching element 21 and the electrode 222 (source) of the switching element 22, and the electrode 232 (cathode) of the protection element 23 is connected to the electrode 211 (collector) of the switching element 21 and the electrode 221 (drain) of the switching element 22. As a result, in each second switch section 2, when a reverse voltage is applied to the switching elements 21 and 22, a forward current flows through the protection element 23, and the reverse voltage applied to the switching elements 21 and 22 is reduced.

[0042] 10, 11, and 13, switching element 21A, switching element 22A, and protective element 23A are each bonded to lead 3A via conductive bonding material 29. Switching element 21B, switching element 22B, and protective element 23B are also each bonded to lead 3A via conductive bonding material 29. Switching element 21C, switching element 22C, and protective element 23C are also each bonded to lead 3A via conductive bonding material 29. These conductive bonding materials 29 are, for example, solder, metal paste, or sintered metal.

[0043] As shown in FIG. 6 , in each second switch section 2 (each of the fourth arm 2A, fifth arm 2B, and sixth arm 2C), the switching element 21, the switching element 22, and the protection element 23 are arranged in a line in the y direction. In the illustrated example, in each second switch section 2 (each of the fourth arm 2A, fifth arm 2B, and sixth arm 2C), the switching element 22, the switching element 21, and the protection element 23 are arranged in this order from the y1 side to the y2 side in the y direction. Therefore, in the y direction, the switching element 21 is located between the switching element 22 and the protection element 23. Note that in each second switch section 2 (each of the fourth arm 2A, fifth arm 2B, and sixth arm 2C), the positions of the switching element 21 and the switching element 22 may be reversed. In this case, a main surface wiring portion similar to the main surface wiring portion 225 is formed in the switching element 21.

[0044] 14, a three-phase AC inverter circuit configured by a plurality of first switch units 1 and a plurality of second switch units 2 has a first phase 10U, a second phase 10V, and a third phase 10W. The first phase 10U, the second phase 10V, and the third phase 10W are the U phase, the V phase, and the W phase, respectively.

[0045] The first phase 10U includes a first arm 1A and a fourth arm 2A. In the first phase 10U, the first arm 1A and the fourth arm 2A are electrically connected in series. The first arm 1A is the lower arm of the first phase 10U, and the fourth arm 2A is the upper arm of the first phase 10U.

[0046] The second phase 10V includes a second arm 1B and a fifth arm 2B. In the second phase 10V, the second arm 1B and the fifth arm 2B are electrically connected in series. The second arm 1B is the lower arm of the second phase 10V, and the fifth arm 2B is the upper arm of the second phase 10V.

[0047] The third phase 10W includes a third arm 1C and a sixth arm 2C. In the third phase 10W, the third arm 1C and the sixth arm 2C are electrically connected in series. The third arm 1C is the lower arm of the third phase 10W, and the sixth arm 2C is the upper arm of the third phase 10W.

[0048] The first control element 8A controls the switching operations of the multiple switching elements 11 and the multiple switching elements 12, and is, for example, a driver IC. The first control element 8A receives a first input signal from the outside and generates a first drive signal for controlling the switching operations of each first switch section 1 based on the first input signal. The first control element 8A outputs a first drive signal (for example, a gate voltage) to the electrode 113 (gate) of each switching element 11 and the electrode 123 (gate) of each switching element 12. This controls the switching operations of each switching element 11 and each switching element 12. In this embodiment, the first control element 8A has a rectangular shape with the x-direction as the longitudinal direction in a plan view.

[0049] In this embodiment, the first control element 8A provides a delay time between the first drive signal input to the switching element 11 and the first drive signal input to the switching element 12 for each of the first switch sections 1 (the first arm 1A, the second arm 1B, and the third arm 1C). The delay time is changed as appropriate depending on, for example, the switching speed of the switching element 11 and the switching speed of the switching element 12. In an example in which the switching element 11 is an IGBT and the switching element 12 is a MOSFET, the first drive signal to the switching element 12 switches from an ON signal to an OFF signal and from an OFF signal to an ON signal earlier than the first drive signal to the switching element 11. Note that the first control element 8A does not necessarily need to provide a delay time between the first drive signal to the switching element 11 and the first drive signal to the switching element 12.

[0050] 4, the first control element 8A is located on the y1 side in the y direction with respect to each first switch section 1. Therefore, the first control element 8A is located on the y1 side in the y direction with respect to the switching elements 11 and 12 of each first switch section 1. In this embodiment, in each first switch section 1, the switching element 12 is located on the y1 side in the y direction with respect to the switching element 11, and therefore the switching element 12 is located between the first control element 8A and the switching element 11 in the y direction.

[0051] The second control element 8B controls the switching operations of the multiple switching elements 21 and the multiple switching elements 22, and is, for example, a driver IC. The second control element 8B receives a second input signal from the outside and generates a second drive signal for controlling the switching operations of each second switch section 2 based on the second input signal. The second control element 8B outputs a second drive signal (for example, a gate voltage) to the electrode 213 (gate) of each switching element 21 and the electrode 223 (gate) of each switching element 22. This controls the switching operations of each switching element 21 and each switching element 22. In this embodiment, the second control element 8B has a rectangular shape with the x-direction as the longitudinal direction in a plan view.

[0052] In the present embodiment, the second control element 8B provides a delay time between the second drive signal input to the switching element 21 and the second drive signal input to the switching element 22 for each second switch section 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C). The delay time is changed as appropriate depending on, for example, the switching speed of the switching element 21 and the switching speed of the switching element 22. In an example in which the switching element 21 is an IGBT and the switching element 22 is a MOSFET, the second drive signal to the switching element 22 switches from an ON signal to an OFF signal and from an OFF signal to an ON signal earlier than the second drive signal to the switching element 21. Note that the second control element 8B does not necessarily need to provide a delay time between the second drive signal to the switching element 21 and the second drive signal to the switching element 22.

[0053] 6 , the second control element 8B is located on the y1 side in the y direction with respect to each second switch section 2. Therefore, the second control element 8B is located on the y1 side in the y direction with respect to the switching element 21 and the switching element 22 of each second switch section 2. In this embodiment, in each second switch section 2, the switching element 22 is located on the y1 side in the y direction with respect to the switching element 21, and therefore the switching element 22 is located between the second control element 8B and the switching element 21 in the y direction.

[0054] As shown in FIGS. 4 and 6 , the first control element 8A and the second control element 8B each have a plurality of electrodes 81, 82. The plurality of electrodes 81, 82 are disposed on the upper surface of each of the first control element 8A and the second control element 8B. The plurality of electrodes 81 of the first control element 8A are electrically connected to any of the plurality of first switch sections 1 (first arm 1A, second arm 1B, and third arm 1C). The plurality of electrodes 81 of the first control element 8A outputs the first drive signal described above. The plurality of electrodes 82 of the first control element 8A are electrically connected to any of the leads 4A to 4H. The plurality of electrodes 81 of the second control element 8B are electrically connected to any of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C). The electrode 81 of the second control element 8B outputs the second drive signal described above. The second control element 8B has a plurality of electrodes 82 which are electrically connected to any one of the leads 4J to 4N, 4Q, and 4R. The second control element 8B also has a plurality of electrodes 83 which are arranged on the upper surface of the second control element 8B. Each of the plurality of electrodes 83 is electrically connected to a corresponding one of the plurality of second switch sections 2 (the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C). A detection signal for detecting the conductive state of each first switch section 1 is input to the plurality of electrodes 83.

[0055] As shown in FIG. 12 , the first control element 8A is bonded to a lead 4R via a bonding material 85. As shown in FIG. 13 , the second control element 8B is bonded to a lead 4H via a bonding material 85. In the semiconductor device A1, no electrodes are formed on the bottom surfaces (surfaces facing the z2 side in the z direction) of the first control element 8A and the second control element 8B, and therefore the bonding material 85 may be conductive or insulating. Note that if electrodes are formed on the bottom surfaces of the first control element 8A and the second control element 8B, a conductive material (such as solder, a metal paste material, or a sintered metal) is used for the bonding material 85.

[0056] The plurality of electronic components 89U, 89V, and 89W are elements, such as diodes, that assist the functions of the first control element 8A and the second control element 8B. In the example shown in FIG. 3 , three electronic components 89U, 89V, and 89W are provided, but the number of electronic components is not limited to this. As shown in FIG. 3 , each of the plurality of electronic components 89U, 89V, and 89W is bonded to a corresponding one of the plurality of leads 4A, 4B, and 4C. As shown in FIG. 13 , each of the plurality of electronic components 89U, 89V, and 89W is bonded by a conductive bonding material 891. The conductive bonding material 891 may be, for example, solder, a metal paste, or a sintered metal.

[0057] As shown in FIG. 3 and other figures, the leads 3A-3G, 3Z and the leads 4A-4H, 4J-4N, 4P-4R support the switching elements 11, 12, 21, 22, 23, 89U, 89V, and 89W, and also provide electrical continuity paths to these elements. Among the leads 3A-3G, 3Z and the leads 4A-4H, 4J-4N, 4P-4R, lead 4H and lead 4R are integrally formed, while the remaining leads are spaced apart. The auxiliary line L1 in FIG. 3 indicates the boundary between lead 4H and lead 4R, indicating the integrally connected portion. Note that lead 4H and lead 4R may also be considered a single lead. Unlike this example, lead 4H and lead 4R may also be spaced apart.

[0058] The leads 3A to 3G, 3Z and the leads 4A to 4H, 4J to 4N, 4P to 4R may be formed from different conductive materials or from a single conductive material. The leads 3A to 3G, 3Z and the leads 4A to 4H, 4J to 4N, 4P to 4R are made of, for example, Cu or a Cu alloy. The materials constituting the leads 3A to 3G, 3Z and the leads 4A to 4H, 4J to 4N, 4P to 4R may not be Cu or a Cu alloy, but may be Ni or a Ni alloy, or a 42 alloy, for example. The materials constituting the leads 3A to 3G, 3Z and the leads 4A to 4H, 4J to 4N, 4P to 4R may be the same or different.

[0059] When the semiconductor device A1 is configured as an IPM, a motor drive current flows through the leads 3A-3G, and a control current flows through the leads 4A-4H, 4J-4N, and 4P-4R. Therefore, a higher voltage is applied to the leads 3A-3G than to the leads 4A-4H, 4J-4N, and 4P-4R, and a larger current flows through the leads 3A-3G. As shown in FIG. 3 , in this embodiment, the high-voltage leads 3A-3G and 3Z and the low-voltage leads 4A-4H, 4J-4N, and 4P-4R are arranged on opposite sides of each other in the y direction.

[0060] The lead 3A carries the switching element 21, the switching element 22, and the protection element 23 of each of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C). As will be understood from the configuration described later, the lead 3A is electrically connected to the electrode 211 (collector) of each switching element 21, the electrode 221 (drain) of each switching element 22, and the electrode 232 (cathode) of each protection element 23. As shown in FIGS. 3 and 6 , the lead 3A includes a plurality of mounting portions 311A, 312A, 313A, a terminal portion 32A, a pad portion 33A, and a connecting portion 34A.

[0061] As shown in Fig. 3, the plurality of mounting portions 311A, 312A, and 313A are each covered with a sealing member 7. The plurality of mounting portions 311A, 312A, and 313A are integrally formed. The plurality of mounting portions 311A, 312A, and 313A are each bonded to the support substrate 51 via a bonding material 39. The bonding material 39 may be conductive or insulating. The bonding material 39 preferably has excellent thermal conductivity.

[0062] 6 , the switching element 21A, the switching element 22A, and the protective element 23A are mounted on the mounting portion 311A. The mounting portion 311A ​​is electrically connected to the electrode 211 (collector) of the switching element 21A and the electrode 221 (drain) of the switching element 22A, and is also electrically connected to the electrode 232 (cathode) of the protective element 23A. In other words, the electrode 211 of the switching element 21A, the electrode 221 of the switching element 22A, and the electrode 232 of the protective element 23A are electrically connected to one another via the mounting portion 311A.

[0063] 6 , the switching element 21B, the switching element 22B, and the protective element 23B are mounted on the mounting portion 312A. The mounting portion 312A is electrically connected to the electrode 211 (collector) of the switching element 21B and the electrode 221 (drain) of the switching element 22B, and is also electrically connected to the electrode 232 (cathode) of the protective element 23B. In other words, the electrode 211 of the switching element 21B, the electrode 221 of the switching element 22B, and the electrode 232 of the protective element 23B are electrically connected to one another via the mounting portion 312A.

[0064] 6 , the switching element 21C, the switching element 22C, and the protective element 23C are mounted on the mounting portion 313A. The mounting portion 313A is electrically connected to the electrode 211 (collector) of the switching element 21C and the electrode 221 (drain) of the switching element 22C, and is also electrically connected to the electrode 232 (cathode) of the protective element 23C. In other words, the electrode 211 of the switching element 21C, the electrode 221 of the switching element 22C, and the electrode 232 of the protective element 23C are electrically connected to one another via the mounting portion 313A.

[0065] As shown in FIG. 3, the terminal portion 32A is a portion of the lead 3A that protrudes from the sealing member 7. The terminal portion 32A protrudes from the mounting portions 311A, 312A, and 313A on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32A is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32A is bent toward the z1 side in the z direction to form an L-shape.

[0066] The pad portion 33A and the connecting portion 34A are covered with the sealing member 7. As shown in Fig. 3, the pad portion 33A and the connecting portion 34A are interposed between the mounting portion 312A and the terminal portion 32A. The pad portion 33A is located on the z1 side of the mounting portion 312A in the z direction, and is connected to the terminal portion 32A. As shown in Fig. 13, the connecting portion 34A is connected to the mounting portion 311A ​​and the pad portion 33A, and is inclined with respect to the y direction.

[0067] 3, leads 3B, 3C, and 3D are arranged on the x2 side in the x direction with respect to lead 3A. Leads 3B, 3C, and 3D are aligned in the x direction. The shapes of leads 3B, 3C, and 3D are not particularly limited, and in the illustrated example, leads 3B, 3C, and 3D have the same shape (or approximately the same shape) and the same size (or approximately the same size).

[0068] The first arm 1A is mounted on the lead 3B. That is, the switching element 11A, the switching element 12A, and the protective element 13A are each mounted on the lead 3B. As will be understood from the configuration described in detail later, the lead 3B is electrically connected to the electrode 111 (collector) of the switching element 11A, the electrode 121 (drain) of the switching element 12A, and the electrode 132 (cathode) of the protective element 13A. As shown in FIGS. 3 and 4 , the lead 3B includes a mounting portion 31B, a terminal portion 32B, a pad portion 33B, and a connecting portion 34B.

[0069] As shown in FIG. 3 , the mounting portion 31B is covered with a sealing member 7. The mounting portion 31B is bonded to a support substrate 51 via a bonding material 39. As shown in FIG. 4 , the switching element 11A, the switching element 12A, and the protection element 13A are each mounted on the mounting portion 31B. The mounting portion 31B is electrically connected to the electrode 111 (collector) of the switching element 11A and the electrode 121 (drain) of the switching element 12A, and is also electrically connected to the electrode 132 (cathode) of the protection element 13A. In other words, the electrode 111 of the switching element 11A, the electrode 121 of the switching element 12A, and the electrode 132 of the protection element 13A are electrically connected to one another via the mounting portion 31B.

[0070] As shown in FIG. 3, the terminal portion 32B is a portion of the lead 3B that protrudes from the sealing member 7. The terminal portion 32B protrudes from the mounting portion 31B on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32B is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32B is bent toward the z1 side in the z direction to form an L-shape.

[0071] The pad portion 33B and the connecting portion 34B are covered with the sealing member 7. As shown in FIG. 3 , the pad portion 33B and the connecting portion 34B are interposed between the mounting portion 31B and the terminal portion 32B. Like the pad portion 33A, the pad portion 33B is located on the z1 side in the z direction with respect to the mounting portion 31B. The pad portion 33B is connected to the terminal portion 32B. A wire 6A is bonded to the pad portion 33B. The connecting portion 34B is connected to the mounting portion 31B and the pad portion 33B, and like the connecting portion 34A, is inclined with respect to the y direction.

[0072] The second arm 1B is mounted on the lead 3C. That is, the switching element 11B, the switching element 12B, and the protective element 13B are each mounted on the lead 3C. As will be understood from the configuration described in detail later, the lead 3C is electrically connected to the electrode 111 (collector) of the switching element 11B, the electrode 121 (drain) of the switching element 12B, and the electrode 132 (cathode) of the protective element 13B. As shown in FIGS. 3 and 4 , the lead 3C includes a mounting portion 31C, a terminal portion 32C, a pad portion 33C, and a connecting portion 34C.

[0073] As shown in FIG. 3 , the mounting portion 31C is covered with a sealing member 7. The mounting portion 31C is bonded to a support substrate 51 via a bonding material 39. As shown in FIG. 4 , the switching element 11B, the switching element 12B, and the protection element 13B are mounted on the mounting portion 31C. The mounting portion 31C is electrically connected to the electrode 111 (collector) of the switching element 11B and the electrode 121 (drain) of the switching element 12B, and is also electrically connected to the electrode 132 (cathode) of the protection element 13B. In other words, the electrode 111 of the switching element 11B, the electrode 121 of the switching element 12B, and the electrode 132 of the protection element 13B are electrically connected to one another via the mounting portion 31C.

[0074] As shown in FIG. 3, the terminal portion 32C is a portion of the lead 3C that protrudes from the sealing member 7. The terminal portion 32C protrudes from the mounting portion 31C on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32C is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32C is bent toward the z1 side in the z direction to form an L-shape.

[0075] The pad portion 33C and the connecting portion 34C are covered with the sealing member 7. As shown in FIG. 3 , the pad portion 33C and the connecting portion 34C are interposed between the mounting portion 31C and the terminal portion 32C. Like the pad portions 33A and 33B, the pad portion 33C is located on the z1 side in the z direction with respect to the mounting portion 31C. The pad portion 33C is connected to the terminal portion 32C. A wire 6B is bonded to the pad portion 33C. The connecting portion 34C is connected to the mounting portion 31C and the pad portion 33C, and like the connecting portions 34A and 34B, is inclined with respect to the y direction.

[0076] The third arm 1C is mounted on the lead 3D. That is, the switching element 11C, the switching element 12C, and the protective element 13C are each mounted on the lead 3D. As will be understood from the configuration described in detail later, the lead 3D is electrically connected to the electrode 111 (collector) of the switching element 11C, the electrode 121 (drain) of the switching element 12C, and the electrode 132 (cathode) of the protective element 13C. As shown in FIGS. 3 and 4 , the lead 3D includes a mounting portion 31D, a terminal portion 32D, a pad portion 33D, and a connecting portion 34D.

[0077] As shown in FIG. 3 , the mounting portion 31D is covered with a sealing member 7. The mounting portion 31D is bonded to a support substrate 51 via a bonding material 39. As shown in FIG. 4 , the switching element 11C, the switching element 12C, and the protection element 13C are mounted on the mounting portion 31D. The mounting portion 31D is electrically connected to the electrode 111 (collector) of the switching element 11C and the electrode 121 (drain) of the switching element 12C, and is also electrically connected to the electrode 132 (cathode) of the protection element 13C. In other words, the electrode 111 of the switching element 11C, the electrode 121 of the switching element 12C, and the electrode 132 of the protection element 13C are electrically connected to one another via the mounting portion 31D.

[0078] As shown in FIG. 3, the terminal portion 32D is a portion of the lead 3D that protrudes from the sealing member 7. The terminal portion 32D protrudes from the mounting portion 31D on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32D is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32D is bent toward the z1 side in the z direction to form an L-shape.

[0079] The pad portion 33D and the connecting portion 34D are covered with the sealing member 7. As shown in FIG. 3 , the pad portion 33D and the connecting portion 34D are interposed between the mounting portion 31D and the terminal portion 32D. Like the pad portions 33A, 33B, and 33C, the pad portion 33D is located on the z1 side of the mounting portion 31D in the z direction. The pad portion 33D is connected to the terminal portion 32D. A wire 6C is bonded to the pad portion 33D. The connecting portion 34D is connected to the mounting portion 31D and the pad portion 33D, and like the connecting portions 34A, 34B, and 34C, is inclined with respect to the y direction.

[0080] 2 and 3, leads 3E, 3F, and 3G are arranged on the x2 side in the x direction relative to lead 3D. Leads 3E, 3F, and 3G are aligned in the x direction. None of the multiple first switch units 1 and the multiple second switch units 2 is mounted on leads 3E, 3F, and 3G, respectively.

[0081] The lead 3E is electrically connected to the electrode 112 (emitter) of the switching element 11A, the electrode 122 (source) of the switching element 12A, and the electrode 131 (anode) of the protection element 13A, as will be described in detail later. As shown in Fig. 3 and other figures, the lead 3E includes a terminal portion 32E and a pad portion 33E. The terminal portion 32E and the pad portion 33E are connected to each other.

[0082] The terminal portion 32E is a portion of the lead 3E that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32E protrudes from the pad portion 33E on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32E is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32E is bent toward the z1 side in the z direction to form an L-shape.

[0083] The pad portion 33E is covered with the sealing member 7 and has a rectangular shape in the illustrated example in a plan view. As shown in FIG. 3, the pad portion 33E does not overlap the support substrate 51 in a plan view. The pad portion 33E is disposed at the same (or substantially the same) position (the same (or substantially the same) height) as the pad portions 33A to 33D in the z direction. As shown in FIG. 3, a wire 6D is bonded to the pad portion 33E, and the pad portion 33E is electrically connected to the electrode 112 (emitter) of the switching element 11A, the electrode 122 (source) of the switching element 12A, and the electrode 131 (anode) of the protection element 13A via the wire 6D.

[0084] The lead 3F is electrically connected to the electrode 112 (emitter) of the switching element 11B, the electrode 122 (source) of the switching element 12B, and the electrode 131 (anode) of the protection element 13B, as will be described in detail later. As shown in FIG. 3 and other figures, the lead 3F includes a terminal portion 32F and a pad portion 33F. The terminal portion 32F and the pad portion 33F are connected to each other.

[0085] The terminal portion 32F is a portion of the lead 3F that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32F protrudes from the pad portion 33F on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32F is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32F is bent toward the z1 side in the z direction to form an L-shape.

[0086] The pad portion 33F is covered with the sealing member 7 and has a rectangular shape in the illustrated example in a plan view. As shown in FIG. 3, the pad portion 33F does not overlap the support substrate 51 in a plan view. The pad portion 33F is disposed at the same (or substantially the same) position (the same (or substantially the same) height) as the pad portions 33A to 33E in the z direction. As shown in FIG. 3, a wire 6E is bonded to the pad portion 33F, and the pad portion 33F is electrically connected to the electrode 112 (emitter) of the switching element 11B, the electrode 122 (source) of the switching element 12B, and the electrode 131 (anode) of the protection element 13B via the wire 6E.

[0087] The lead 3G is electrically connected to the electrode 112 (emitter) of the switching element 11C, the electrode 122 (source) of the switching element 12C, and the electrode 131 (anode) of the protection element 13C, as will be described in detail later. As shown in FIG. 3 and other figures, the lead 3G includes a terminal portion 32G and a pad portion 33G. The terminal portion 32G and the pad portion 33G are connected to each other.

[0088] The terminal portion 32G is a portion of the lead 3G that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32G protrudes from the pad portion 33G on the opposite side of the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32G is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32G is bent toward the z1 side in the z direction to form an L-shape.

[0089] The pad portion 33G is covered with the sealing member 7. As shown in FIG. 3, the pad portion 33G does not overlap the support substrate 51 in a plan view. The pad portion 33G is disposed at the same (or substantially the same) position (the same (or substantially the same) height) as the pad portions 33A to 33F in the z direction. As shown in FIG. 3, a wire 6F is bonded to the pad portion 33G, and the pad portion 33G is electrically connected to the electrode 112 (emitter) of the switching element 11C, the electrode 122 (source) of the switching element 12C, and the electrode 131 (anode) of the protection element 13C via the wire 6F.

[0090] The lead 3Z is disposed on the x1 side in the x direction relative to the lead 3A. The lead 3Z is not electrically connected to either the plurality of first switch sections 1 or the plurality of second switch sections 2. As shown in FIG. 3 and other figures, the lead 3Z includes a terminal section 32Z and a pad section 33Z. The terminal section 32Z and the pad section 33Z are connected to each other.

[0091] The terminal portion 32Z is ​​a portion of the lead 3Z that protrudes from the sealing member 7. As shown in Fig. 3, the terminal portion 32Z protrudes from the pad portion 33Z on the opposite side in the y direction from the leads 4A to 4H, 4J to 4N, and 4P to 4R. In the illustrated example, the terminal portion 32Z is ​​bent toward the z1 side in the z direction to form an L shape.

[0092] The pad portion 33Z is covered with the sealing member 7. As shown in Fig. 3, the pad portion 33Z does not overlap the support substrate 51 in a plan view. The pad portion 33Z is disposed at the same (or approximately the same) position (the same (or approximately the same) height) as each of the pad portions 33A to 33G in the z direction.

[0093] 3, lead 4A, lead 4B, and lead 4C are arranged on the x1 side in the x direction relative to lead 4D. While lead 4A will be described in detail below, leads 4B and 4C also include similar components. In this case, the components of lead 4A are obtained by replacing "A" with "B" or "C" to become the components of lead 4B and lead 4C.

[0094] As shown in Fig. 3 etc., the lead 4A includes a terminal portion 42A and a pad portion 43A. As described above, and although detailed description will be omitted, as shown in Fig. 3 etc., the lead 4B includes a terminal portion 42B and a pad portion 43B, and the lead 4C includes a terminal portion 42C and a pad portion 43C.

[0095] The terminal portion 42A is a portion of the lead 4A that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42A protrudes from the pad portion 43A on the opposite side of the leads 3A to 3G and 3Z in the y direction. The terminal portion 42A is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42A is bent toward the z1 side in the z direction to form an L-shape.

[0096] The pad portion 43A is covered with a sealing member 7. As shown in Fig. 3, either an electronic component 89U or a plurality of wires 6L is bonded to the pad portion 43A. Note that an electronic component 89V is bonded to the pad portion 43B instead of the electronic component 89U, and an electronic component 89W is bonded to the pad portion 43C instead of the electronic component 89U. The shape of the pad portion 43A is not limited to the example shown in the figures.

[0097] 3, multiple leads 4D to 4G are arranged on the x2 side in the x direction relative to lead 4C. While lead 4D will be described in detail below, leads 4E, 4F, and 4G also include similar components. In this case, the "D" in each component of lead 4D is replaced with "E," "F," or "G" to represent each component of leads 4E, 4F, and 4G.

[0098] As shown in Fig. 3 etc., lead 4D includes a terminal portion 42D, a pad portion 43D, and a connecting portion 44D. As described above, and although detailed description will be omitted, as shown in Fig. 3 etc., lead 4E includes a terminal portion 42E, a pad portion 43E, and a connecting portion 44E, lead 4F includes a terminal portion 42F, a pad portion 43F, and a connecting portion 44F, and lead 4G includes a terminal portion 42G, a pad portion 43G, and a connecting portion 44G.

[0099] The terminal portion 42D is a portion of the lead 4D that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42D protrudes from the pad portion 43D on the opposite side of the leads 3A to 3G and 3Z in the y direction. The terminal portion 42D is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42D is bent toward the z1 side in the z direction to form an L-shape.

[0100] The pad portion 43D is covered with a sealing member 7. As shown in Fig. 3, one of a plurality of wires 6L is joined to the pad portion 43D, and the pad portion 43D is electrically connected to the electrode 82 of the second control element 8B via the wire 6L.

[0101] The connecting portion 44D is covered with the sealing member 7. As shown in Fig. 3, the connecting portion 44D is connected to the terminal portion 42D and the pad portion 43D and is interposed between them.

[0102] The second control element 8B is mounted on the lead 4H. As shown in Fig. 3 and other figures, the lead 4H includes a mounting portion 41H, a terminal portion 42H, a pad portion 43H, a plurality of connecting portions 44H, and a protruding portion 45H.

[0103] The mounting portion 41H is covered with a sealing member 7. As shown in Fig. 3 and Fig. 13, the second control element 8B is mounted on the mounting portion 41H. As described above, the second control element 8B is fixed to the mounting portion 41H by the bonding material 85. As shown in Fig. 13, the mounting portion 41H is spaced apart from the support substrate 51 in the z direction.

[0104] The terminal portion 42H is a portion of the lead 4H that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42H protrudes from the mounting portion 41H on the side opposite the leads 3A to 3G and 3Z in the y direction. The terminal portion 42H is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42H is bent in the z direction to form an L-shape.

[0105] The pad portion 43H is covered with the sealing member 7. The pad portion 43H is adjacent to the mounting portion 41H. As shown in FIG. 3, one of the plurality of wires 6L is joined to the pad portion 43H.

[0106] Each of the multiple connecting portions 44H is covered with the sealing member 7. Among the multiple connecting portions 44H, some are interposed between and connected to the terminal portion 42H and the pad portion 43H, and others are interposed between and connected to the mounting portion 41H and the protruding portion 45H.

[0107] As shown in FIG. 3, the protruding portion 45H extends from the connecting portion 44H connected to the mounting portion 41H toward the y1 side in the y direction, and protrudes from the sealing member 7.

[0108] The lead 4R has the first control element 8A mounted thereon. As shown in Fig. 3 and other figures, the lead 4R includes a mounting portion 41R, a terminal portion 42R, a pad portion 43R, and a connecting portion 44R.

[0109] The mounting portion 41R is covered with a sealing member 7. As shown in Fig. 3 and Fig. 12, the first control element 8A is mounted on the mounting portion 41R. As described above, the first control element 8A is fixed to the mounting portion 41R by the bonding material 85. As shown in Fig. 12, the mounting portion 41R is spaced apart from the support substrate 51 in the z direction, similar to the mounting portion 41H.

[0110] The terminal portion 42R is a portion of the lead 4R that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42R protrudes from the mounting portion 41R on the side opposite the leads 3A to 3G and 3Z in the y direction. The terminal portion 42R is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42R is bent in the z direction to form an L-shape.

[0111] The pad portion 43R is covered with the sealing member 7. The pad portion 43R is adjacent to the mounting portion 41R. As shown in FIG. 3, one of the plurality of wires 6L is joined to the pad portion 43R.

[0112] The connecting portions 44R are each covered with the sealing member 7. The connecting portions 44R are interposed between the terminal portion 42R and the pad portion 43R and connected to them.

[0113] 3, multiple leads 4J to 4N, 4P, and 4Q are arranged on the x2 side in the x direction with respect to lead 4H. While lead 4Q will be described in detail below, leads 4J, 4K, 4L, 4M, 4N, and 4P also include similar components. In this case, the "Q" in each component of lead 4Q is replaced with "J," "K," "L," "M," "N," or "P" to become each of the components of leads 4J, 4K, 4L, 4M, 4N, and 4P.

[0114] As shown in Fig. 3, the lead 4Q includes a terminal portion 42Q, a pad portion 43Q, and a connecting portion 44Q. As described above, and although detailed description will be omitted, as shown in Fig. 3, the lead 4J includes a terminal portion 42J, a pad portion 43J, and a connecting portion 44J, the lead 4K includes a terminal portion 42K, a pad portion 43K, and a connecting portion 44K, the lead 4L includes a terminal portion 42L, a pad portion 43L, and a connecting portion 44L, the lead 4M includes a terminal portion 42M, a pad portion 43M, and a connecting portion 44M, the lead 4N ​​includes a terminal portion 42N, a pad portion 43N, and a connecting portion 44N, and the lead 4P includes a terminal portion 42P, a pad portion 43P, and a connecting portion 44P.

[0115] The terminal portion 42Q is a portion of the lead 4Q that protrudes from the sealing member 7. As shown in FIG. 3 , the terminal portion 42Q protrudes from the pad portion 43Q on the opposite side of the leads 3A to 3G and 3Z in the y direction. The terminal portion 42Q is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42Q is bent in the z direction to form an L-shape. The terminal portions 42Q, 42J to 42N of the multiple leads 4Q, 4J to 4N are each disposed between the terminal portion 42H of the lead 4H and the terminal portion 42R of the lead 4R in the x direction, and the terminal portion 42P of the lead 4P is located on the x2 side in the x direction with respect to the terminal portion 42R.

[0116] The pad portion 43Q is covered with a sealing member 7. As shown in Fig. 3, one of the plurality of wires 6L is joined to the pad portion 43Q, and electrical conduction is established with the electrode 82 of the first control element 8A via the wire 6L. However, in the example shown in Fig. 3, none of the plurality of wires 6L is joined to the pad portion 43P.

[0117] The connecting portion 44Q is covered with the sealing member 7. As shown in Fig. 3, the connecting portion 44Q is connected to the terminal portion 42Q and the pad portion 43Q and is interposed between them.

[0118] In the illustrated example, the multiple terminals 42A to 42C are arranged side by side in the x direction at a first pitch width d1 (see FIG. 3). The multiple terminals 42D to 42H, 42J to 42N, and 42P to 42R are arranged side by side in the x direction at a second pitch width d2 (see FIG. 3). The first pitch width d1 is larger than the second pitch width d2. The distance between terminals 42C and 42D in the x direction is the first pitch width d1.

[0119] As shown in FIGS. 10 to 13 , the support substrate 51 supports the leads 3A to 3D and is provided to transfer heat from the first switch sections 1 and the second switch sections 2 to the outside of the semiconductor device A1. The support substrate 51 is plate-shaped and rectangular in plan view. The support substrate 51 is made of an insulating material, such as alumina (Al2O3), silicon nitride (SiN), aluminum nitride (AlN), or alumina containing zirconia. While a ceramic material is preferred for the support substrate 51 in terms of strength, heat transfer rate, and insulation, various materials (e.g., epoxy resin or silicon) may be used. Furthermore, the support substrate 51 is preferably made of a material with a higher thermal conductivity than the sealing member 7.

[0120] As shown in FIGS. 3 and 10 to 13 , the support substrate 51 has a first surface 511, a second surface 512, a third surface 513, a fourth surface 514, a fifth surface 515, and a sixth surface 516. As shown in FIGS. 10 to 13 , the first surface 511 and the second surface 512 are spaced apart in the z direction. The first surface 511 faces upward in the z direction (the z1 side in the z direction), and the second surface 512 faces downward in the z direction (the z2 side in the z direction). As shown in FIGS. 10 to 13 , a plurality of mounting portions 311A, 312A, 313A, 31B, 31C, and 31D are bonded to the first surface 511 via a plurality of bonding materials 39. The second surface 512 is exposed from the sealing member 7, as shown in FIGS. 10 to 13 . The third surface 513, the fourth surface 514, the fifth surface 515, and the sixth surface 516 are located between and connected to the first surface 511 and the second surface 512 in the z direction. As shown in FIGS. 3, 10, and 11, the third surface 513 and the fourth surface 514 are spaced apart in the x direction. The third surface 513 faces the x2 side in the x direction, and the fourth surface 514 faces the x1 side in the x direction. As shown in FIGS. 3, 12, and 13, the fifth surface 515 and the sixth surface 516 are spaced apart in the y direction. The fifth surface 515 faces the y2 side in the y direction, and the sixth surface 516 faces the y1 side in the y direction. In the illustrated example, the first surface 511, the second surface 512, the third surface 513, the fourth surface 514, the fifth surface 515, and the sixth surface 516 are each flat.

[0121] The plurality of connection members 6 electrically connect two separated portions. As can be seen from FIGS. 3 to 7 , the plurality of connection members 6 include a plurality of wires 6A to 6F, 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q. Each of the wires 6A to 6F, 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q (each connection member 6) is a bonding wire. Note that instead of each of the connection members 6, 6A to 6F, 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q, a conductive plate-like member, a bonding ribbon, or a plated wire may be used.

[0122] 6, the wire 6A is joined to the electrode 212 (emitter) of the switching element 21A, the electrode 222 (source) of the switching element 22A, and the electrode 231 (anode) of the protective element 23A. This establishes electrical continuity between the electrode 212 of the switching element 21A, the electrode 222 of the switching element 22A, and the electrode 231 of the protective element 23A. Furthermore, the wire 6A is joined to the pad portion 33B of the lead 3B, as shown in FIG. Since lead 3B is electrically connected to first arm 1A (electrode 111 of switching element 11A, electrode 121 of switching element 12A, and electrode 132 of protective element 13A), electrode 212 of switching element 21A, electrode 222 of switching element 22A, and electrode 231 of protective element 23A are electrically connected to electrode 111 of switching element 11A, electrode 121 of switching element 12A, and electrode 132 of protective element 13A via lead 3B and wire 6A.

[0123] 6, the wire 6B is joined to the electrode 212 (emitter) of the switching element 21B, the electrode 222 (source) of the switching element 22B, and the electrode 231 (anode) of the protective element 23B. This establishes electrical continuity between the electrode 212 of the switching element 21B, the electrode 222 of the switching element 22B, and the electrode 231 of the protective element 23B. Furthermore, the wire 6B is joined to the pad portion 33C of the lead 3C, as shown in FIG. Since lead 3C is electrically connected to second arm 1B (electrode 111 of switching element 11B, electrode 121 of switching element 12B, and electrode 132 of protection element 13B), electrode 212 of switching element 21B, electrode 222 of switching element 22B, and electrode 231 of protection element 23B are electrically connected to electrode 111 of switching element 11B, electrode 121 of switching element 12B, and electrode 132 of protection element 13B via lead 3C and wire 6B.

[0124] 6, the wire 6C is joined to the electrode 212 (emitter) of the switching element 21C, the electrode 222 (source) of the switching element 22C, and the electrode 231 (anode) of the protective element 23C. This establishes electrical continuity among the electrode 212 of the switching element 21C, the electrode 222 of the switching element 22C, and the electrode 231 of the protective element 23C. Furthermore, the wire 6C is joined to the pad portion 33D of the lead 3D, as shown in FIG. Since lead 3D is electrically connected to third arm 1C (electrode 111 of switching element 11C, electrode 121 of switching element 12C, and electrode 132 of protection element 13C), electrode 212 of switching element 21C, electrode 222 of switching element 22C, and electrode 231 of protection element 23C are electrically connected to electrode 111 of switching element 11C, electrode 121 of switching element 12C, and electrode 132 of protection element 13C via lead 3D and wire 6C.

[0125] As shown in Fig. 4, the wire 6D is bonded to the electrode 112 (emitter) of the switching element 11A, the electrode 122 (source) of the switching element 12A, and the electrode 131 (anode) of the protection element 13A. This establishes electrical continuity among the electrode 112 of the switching element 11A, the electrode 122 of the switching element 12A, and the electrode 131 of the protection element 13A. Furthermore, as shown in Fig. 3, the wire 6D is bonded to the pad portion 33E of the lead 3E. Therefore, the lead 3E is electrically connected to the electrode 112 of the switching element 11A, the electrode 122 of the switching element 12A, and the electrode 131 of the protection element 13A via the wire 6D.

[0126] As shown in Fig. 4, the wire 6E is bonded to the electrode 112 (emitter) of the switching element 11B, the electrode 122 (source) of the switching element 12B, and the electrode 131 (anode) of the protection element 13B. This establishes electrical continuity among the electrode 112 of the switching element 11B, the electrode 122 of the switching element 12B, and the electrode 131 of the protection element 13B. Furthermore, as shown in Fig. 3, the wire 6E is bonded to the pad portion 33F of the lead 3F. Therefore, the lead 3F is electrically connected to the electrode 112 of the switching element 11B, the electrode 122 of the switching element 12B, and the electrode 131 of the protection element 13B via the wire 6E.

[0127] As shown in FIG. 4 , the wire 6F is bonded to the electrode 112 (emitter) of the switching element 11C, the electrode 122 (source) of the switching element 12C, and the electrode 131 (anode) of the protection element 13C. This establishes electrical continuity among the electrode 112 of the switching element 11C, the electrode 122 of the switching element 12C, and the electrode 131 of the protection element 13C. Furthermore, as shown in FIG. 3 , the wire 6F is bonded to the pad portion 33G of the lead 3G. Therefore, the lead 3G is electrically connected to the electrode 112 of the switching element 11C, the electrode 122 of the switching element 12C, and the electrode 131 of the protection element 13C via the wire 6F.

[0128] As shown in FIGS. 4 and 5 , the plurality of wires 61G are individually bonded to the electrode 81 of the first control element 8A and the main surface wiring portion 125 (first pad portion 125a) of the plurality of switching elements 12. As shown in FIGS. 4 and 5 , the plurality of wires 62G are individually bonded to the main surface wiring portion 125 (second pad portion 125b) of the plurality of switching elements 12 and the electrode 113 (gate) of the plurality of switching elements 11. With this configuration, the electrode 113 of each switching element 11 is electrically connected to the electrode 81 of the first control element 8A via the wire 62G, the main surface wiring portion 125, and the wire 61G. Therefore, a first drive signal for each switching element 11 is input from the electrode 81 of the first control element 8A to the electrode 113 of each switching element 11 via the wire 61G, the main surface wiring portion 125, and the wire 62G.

[0129] 4, the plurality of wires 6H are connected to the electrodes 123 of the respective switching elements 12 and the electrodes 81 of the first control element 8A. The plurality of wires 6H transmit the first drive signals corresponding to the respective switching elements 12. In other words, the first drive signals for the respective switching elements 12 are input from the electrodes 81 of the first control element 8A to the electrodes 123 of the respective switching elements 12 via the wires 6H.

[0130] As shown in FIGS. 6 and 7 , the plurality of wires 61Q are individually bonded to the electrode 81 of the second control element 8B and the main surface wiring portion 225 (third pad portion 225a) of the plurality of switching elements 22. As shown in FIGS. 6 and 7 , the plurality of wires 62Q are individually bonded to the main surface wiring portion 225 (fourth pad portion 225b) of the plurality of switching elements 22 and the electrode 213 (gate) of the plurality of switching elements 21. With this configuration, the electrode 213 of each switching element 21 is electrically connected to the electrode 81 of the second control element 8B via the wire 62Q, the main surface wiring portion 225, and the wire 61Q. Therefore, the second drive signal for each switching element 21 is input from the electrode 81 of the second control element 8B to the electrode 213 of each switching element 21 via the wire 61Q, the main surface wiring portion 225, and the wire 62Q.

[0131] 5, the plurality of wires 6J are connected to the electrodes 223 of each switching element 22 and the electrode 81 of the second control element 8B. The plurality of wires 6J transmit the second drive signals corresponding to each of the plurality of switching elements 22. In other words, the second drive signals for each switching element 22 are input from the electrode 81 of the second control element 8B to the electrodes 223 of each switching element 22 via the wires 6J.

[0132] The plurality of wires 6K are connected to the electrodes 222 of the respective switching elements 22 and the electrode 83 of the second control element 8B. Each of the plurality of wires 6K transmits a detection signal for detecting the conduction state of any of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C. In the illustrated example, the detection signal is the source current (or source voltage) of each switching element 22.

[0133] Each of the plurality of wires 6L is connected to an electrode 82 of the first control element 8A or an electrode 82 of the second control element 8B and one of the plurality of electronic components 89U, 89V, 89W or one of the pads 43A to 43H, 43J to 43N, 43P to 43R of the plurality of leads 4A to 4H, 4J to 4N, 4P to 4R. Thus, each wire 6L electrically connects the first control element 8A or the second control element 8B to each of the leads 4A to 4H, 4J to 4N, 4P to 4R.

[0134] In the multiple connection members 6, the wires 6A to 6F have a larger wire diameter than the wires 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q. This is because, when the semiconductor device A1 is configured as an IPM, a higher voltage is applied to the multiple leads 3A to 3G than to the multiple leads 4A to 4F, and a larger current flows through them. The wires 6A to 6F are made of, for example, Al or an Al alloy. The constituent material of the wires 6A to 6F may be Au, an Au alloy, or Cu or a Cu alloy, instead of Al or an Al alloy. The wires 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q are made of, for example, Au or an Au alloy. The constituent material of the wires 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q may be Al, an Al alloy, or Cu or a Cu alloy, instead of Au or an Au alloy.

[0135] 1 to 3 and 8 to 13, the sealing member 7 covers the first switch sections 1, the second switch sections 2, the first control element 8A, the second control element 8B, the electronic components 89U, 89V, and 89W, a portion of each of the leads 3A to 3G and 3Z, a portion of each of the leads 4A to 4H, 4J to 4N, and 4P to 4R, a portion of the support substrate 51, and the connecting members 6. The sealing member 7 is, for example, a black epoxy resin. The sealing member 7 has a resin main surface 71, a resin back surface 72, and a plurality of resin side surfaces 73 to 76.

[0136] As shown in FIGS. 8 to 13 , the resin main surface 71 and the resin back surface 72 are spaced apart in the z direction. The resin main surface 71 faces upward in the z direction (the z1 side in the z direction), and the resin back surface 72 faces downward in the z direction (the z2 side in the z direction). The resin main surface 71 and the resin back surface 72 are each substantially flat. Each of the multiple resin side surfaces 73 to 76 is located between the resin main surface 71 and the resin back surface 72 in the z direction and is connected to them. As shown in FIGS. 2 , 3 , 8 , 10 , and 11 , the pair of resin side surfaces 73, 74 are spaced apart in the x direction. The pair of resin side surfaces 73, 74 face opposite each other in the x direction. As shown in FIGS. 2 , 3 , 9 , 12 , and 13 , the pair of resin side surfaces 75, 76 are spaced apart in the y direction. The pair of resin side surfaces 75, 76 face opposite each other in the y direction. 2 and 3, a recess 731 recessed in the x direction is formed on the resin side surface 73. A recess 741 recessed in the x direction is formed on the resin side surface 74. The recess 731 and the recess 741 are used, for example, to fix the semiconductor device A1 when it is mounted. Also, as shown in FIGS. 2 and 3, a plurality of recesses 761 recessed in the y direction are formed on the resin side surface 76.

[0137] In the semiconductor device A1, a first DC voltage applied to terminal 32A (lead 3A) and terminal 32E (lead 3E) is converted into a first AC voltage by the switching operations of the first arm 1A and the fourth arm 2A. The first AC voltage is then output from terminal 32B (lead 3B). A second DC voltage applied to terminal 32A (lead 3A) and terminal 32F (lead 3F) is converted into a second AC voltage by the switching operations of the second arm 1B and the fifth arm 2B. The second AC voltage is then output from terminal 32C (lead 3C). A third DC voltage applied to terminal 32A (lead 3A) and terminal 32G (lead 3G) is converted into a third AC voltage by the switching operations of the third arm 1C and the sixth arm 2C. The third AC voltage is then output from terminal 32D (lead 3D).

[0138] The semiconductor device A1 configured as described above has the following circuit configuration, as shown in FIG. 14 . In the example shown in FIG. 14 , the switching elements 11A, 11B, and 11C and the switching elements 21A, 21B, and 21C are IGBTs, and the switching elements 12A, 12B, and 12C and the switching elements 22A, 22B, and 22C are MOSFETs. Furthermore, the protection elements 13A, 13B, and 13C and the protection elements 23A, 23B, and 23C are Schottky barrier diodes. Note that FIG. 14 also illustrates the parasitic diodes of the switching elements 12A, 12B, and 12C and the switching elements 22A, 22B, and 22C.

[0139] The collectors (electrodes 211) of each switching element 21A, 21B, and 21C, the drains (electrodes 221) of each switching element 22A, 22B, and 22C, and the cathodes (electrodes 131) of each protection element 23A, 23B, and 23C are connected to each other and to the P terminal (lead 3A).

[0140] The emitter (electrode 212) of switching element 21A, the source (electrode 222) of switching element 22A, and the anode (electrode 231) of protection element 23A are connected to the collector (electrode 111) of switching element 11A, the drain (electrode 121) of switching element 12A, and the cathode (electrode 132) of protection element 13A via connection point N1. Connection point N1 is connected to the U terminal (lead 3B).

[0141] The emitter (electrode 212) of switching element 21B, the source (electrode 222) of switching element 22B, and the anode (electrode 231) of protection element 23B are connected to the collector (electrode 111) of switching element 11B, the drain (electrode 121) of switching element 12B, and the cathode (electrode 132) of protection element 13B via connection point N2. Connection point N2 is connected to the V terminal (lead 3C).

[0142] The emitter (electrode 212) of switching element 21C, the source (electrode 222) of switching element 22C, and the anode (electrode 231) of protection element 23C are connected to the collector (electrode 111) of switching element 11C, the drain (electrode 121) of switching element 12C, and the cathode (electrode 132) of protection element 13C via connection point N3. Connection point N3 is connected to the W terminal (lead 3D).

[0143] The emitter (electrode 112) of switching element 11A, the source (electrode 122) of switching element 12A, and the anode (electrode 131) of protection element 13A are connected to the NU terminal (lead 3E). The emitter (electrode 112) of switching element 11B, the source (electrode 122) of switching element 12B, and the anode (electrode 131) of protection element 13B are connected to the NV terminal (lead 3F). The emitter (electrode 112) of switching element 11C, the source (electrode 122) of switching element 12C, and the anode (electrode 131) of protection element 13C are connected to the NW terminal (lead 3G).

[0144] The voltage level applied to the U terminal (lead 3B), V terminal (lead 3C), and W terminal (lead 3D) is, for example, about 0 V to 650 V. On the other hand, the voltage level applied to the NU terminal (lead 3E), NV terminal (lead 3F), and NW terminal (lead 3G) is, for example, about 0 V, which is lower than the voltage level applied to the U terminal (lead 3B), V terminal (lead 3C), and W terminal (lead 3D).

[0145] The gates (electrodes 213) of the switching elements 21A, 21B, and 21C and the gates (electrodes 223) of the switching elements 22A, 22B, and 22C are connected to the second control element 8B. The sources (electrodes 222) of the switching elements 22A, 22B, and 22C are connected to the second control element 8B. The gates (electrodes 113) of the switching elements 11A, 11B, and 11C and the gates (electrodes 123) of the switching elements 12A, 12B, and 12C are connected to the first control element 8A.

[0146] The LINU terminal (lead 4Q), LINV terminal (lead 4J), and LINW terminal (lead 4K) are connected to an external gate control circuit and receive a first input signal from the gate control circuit. The HINU terminal (lead 4E), HINV terminal (lead 4F), and HINW terminal (lead 4G) are connected to the gate control circuit (not shown) and receive a second input signal from the gate control circuit.

[0147] The first control element 8A is electrically connected to the LINU terminal (lead 4Q), the LINV terminal (lead 4J), the LINW terminal (lead 4K), the second VCC terminal (lead 4L), the FO terminal (lead 4M), the CIN terminal (lead 4N), and the second GND terminal (lead 4R). The first control element 8A is also electrically connected to the first GND terminal (lead 4H). The second VCC terminal is a terminal that supplies the power supply voltage VCC to the first control element 8A. The first control element 8A receives a first input signal from the LINU terminal, the LINV terminal, and the LINW terminal. The first control element 8A generates the first drive signal (e.g., a gate voltage) based on the input first input signal. The generated first drive signal is then input to the gates (electrodes 113) of the switching elements 11A, 11B, and 11C and the gates (electrodes 123) of the switching elements 12A, 12B, and 12C.

[0148] The second control element 8B is electrically connected to the VBU terminal (lead 4A), the VBV terminal (lead 4B), the VBW terminal (lead 4C), the HINU terminal (lead 4D), the HINV terminal (lead 4E), the HINW terminal (lead 4F), the first VCC terminal (lead 4G), and the first GND terminal (lead 4H). The second control element 8B is also electrically connected to the second GND terminal (lead 4R). The first VCC terminal is a terminal that supplies the power supply voltage VCC to the second control element 8B. The second control element 8B receives second input signals from the HINU terminal, the HINV terminal, and the HINW terminal. The second control element 8B generates the second drive signal (e.g., gate voltage) based on the received second input signal. The generated second drive signal is then input to the gates (electrodes 213) of the switching elements 21A, 21B, and 21C and the gates (electrodes 223) of the switching elements 22A, 22B, and 22C.

[0149] 14, the first GND terminal (lead 4H) and the second GND terminal (lead 4R) are connected inside the semiconductor device A1 and are at the same potential. Alternatively, the first GND terminal (lead 4H) and the second GND terminal (lead 4R) may be separated from each other inside the semiconductor device A1 and be at different potentials.

[0150] The semiconductor device A1 has the following functions and effects.

[0151] The semiconductor device A1 includes at least one first switch section 1 and a first control element 8A. Each of the at least one first switch section 1 includes a switching element 11 and a switching element 12. The first control element 8A is located closer to the y1 side in the y direction than the switching elements 11 and 12, and the switching element 12 is located between the first control element 8A and the switching element 11 in the y direction. Given this positional relationship between the first control element 8A, the switching elements 11, and the switching elements 12, if a single wire is used to directly connect the first control element 8A and the switching element 11, and a single wire is used to directly connect the first control element 8A and the switching element 12, the wire connected to the switching element 11, which is relatively far from the first control element 8A, becomes longer. The longer the wire, the more likely it is that wire sweep will occur during the formation of the molding resin (sealing member 7). Therefore, in the semiconductor device A1, the switching element 12 is provided with a main surface wiring portion 125, the first control element 8A and the main surface wiring portion 125 are connected by a wire 61G, and the main surface wiring portion 125 and the switching element 11 are connected by a wire 62G. This makes each of the wires 61G, 62G shorter than when the first control element 8A and the switching element 11 are directly connected by a single wire. In other words, the semiconductor device A1 can suppress wire sweep of each of the wires 61G, 62G. Therefore, the semiconductor device A1 has a more preferable structure in a configuration in which multiple switching elements (switching element 11 and switching element 12) operate as a single first switch section 1.

[0152] The aforementioned wire sweep also applies to the relationship between each of the switching elements 21 and 22 of at least one second switch section 2 and the second control element 8B. That is, in the semiconductor device A1, the switching element 22 is provided with a main-surface wiring section 225, the second control element 8B is connected to the main-surface wiring section 225 by a wire 61Q, and the main-surface wiring section 225 is connected to the switching element 21 by a wire 62Q. This allows the wires 61Q and 62Q to be shorter than when the second control element 8B and the switching element 21 are directly connected by a single wire. That is, the semiconductor device A1 can suppress wire sweep of the wires 61Q and 62Q. Therefore, the semiconductor device A1 has a more preferable structure in a configuration in which multiple switching elements (the switching elements 21 and 22) operate as a single second switch section 2.

[0153] In the semiconductor device A1, the switching elements 11 and 12 in each first switch section 1 are different types. Switching elements include IGBTs, MOSFETs, and bipolar transistors, and different types have different electrical characteristics. For example, MOSFETs and IGBTs are known to exhibit the following electrical characteristics due to differences in their physical properties and structures. For example, MOSFETs have faster switching speeds and lower switching losses than IGBTs. Meanwhile, IGBTs have lower on-resistances and lower steady-state losses than MOSFETs in high-current ranges. Therefore, in the semiconductor device A1, the switching elements 11 are configured as IGBTs and the switching elements 12 are configured as MOSFETs. During switching (turn-on and turn-off) of each first switch section 1, switching losses can be reduced by controlling the switching elements 12 to allow more current to flow. When each first switch section 1 is in a steady state, steady-state losses can be reduced by controlling the switching elements 11 to allow more current to flow. Therefore, the semiconductor device A1 in which the switching element 11 is an IGBT and the switching element 12 is a MOSFET can reduce both switching loss and steady-state loss, thereby reducing power loss. In other words, the semiconductor device A1 can improve conversion efficiency. In this way, using different types of switching elements (the switching elements 11 and 12) allows them to operate so as to complement each other's electrical characteristics, which is preferable for operating multiple switching elements (the switching elements 11 and 12) as a single first switch section 1. This also applies to the relationship between the switching elements 21 and 22 in each second switch section 2. In other words, using different types of switching elements (the switching elements 21 and 22) in the semiconductor device A1 is preferable for operating multiple switching elements (the switching elements 21 and 22) as a single second switch section 2. For example, if the switching element 21 is an IGBT and the switching element 22 is a MOSFET, both switching loss and steady-state loss can be reduced, thereby reducing power loss.

[0154] Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. Note that the configurations of the components in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0155] 15 to 19 show a semiconductor device A2 according to the second embodiment. As shown in these figures, the semiconductor device A2 includes a plurality of first switch sections 1, a plurality of second switch sections 2, a first control element 8A, a second control element 8B, a plurality of electronic components 89U, 89V, and 89W, a plurality of leads 3A to 3G, and 3Z, a plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R, a support substrate 51, a wiring pattern 52, a plurality of connecting members 6, and a sealing member 7. In other words, the semiconductor device A2 differs from the semiconductor device A1 mainly in that it further includes a wiring pattern 52.

[0156] The wiring pattern 52 is formed on the first surface 511 of the support substrate 51. The wiring pattern 52 is made of a conductive material. The wiring pattern 52 is covered with a sealing member 7. The wiring pattern 52 includes a plurality of wiring portions 52A to 52H, 52J to 52N, and 52P to 52R and a plurality of bonding portions 53A to 53D.

[0157] Each of the plurality of wiring portions 52A to 52H, 52J to 52N, and 52P to 52R is formed on a support substrate 51. In this embodiment, the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R are formed on a first surface 511 of the support substrate 51. The wiring portions 52A to 52H, 52J to 52N, and 52P to 52R are made of a conductive material. The conductive material constituting the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R is not particularly limited, but examples include materials containing Ag, Cu, and Au. In the following description, a case in which the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R contain Ag will be described as an example. The wiring portions 52A to 52H, 52J to 52N, and 52P to 52R may contain Cu instead of Ag, or Au instead of Ag or Cu. Alternatively, the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R may contain Ag-Pt or Ag-Pd. The method for forming the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R is not limited, and they may be formed, for example, by printing a paste containing these metals and then firing the printed paste.

[0158] Among the multiple wiring portions 52A to 52H, 52J to 52N, and 52P to 52R, wiring portion 52H and wiring portion 52R are integrally formed, and the remaining wiring portions are spaced apart. Unlike this example, wiring portion 52H and wiring portion 52R may be spaced apart from each other.

[0159] As shown in FIG. 15, the wiring portion 52A, the wiring portion 52B, and the wiring portion 52C are arranged on the x1 side in the x direction with respect to the wiring portion 52D.

[0160] 15, a wire 6L connected to the second control element 8B and an electronic component 89U are joined to the wiring portion 52A. A lead 4A is also joined to the wiring portion 52A.

[0161] 15, a wire 6L joined to the second control element 8B and an electronic component 89V are joined to the wiring portion 52B. A lead 4B is also joined to the wiring portion 52B.

[0162] 15, a wire 6L joined to the second control element 8B and an electronic component 89W are joined to the wiring portion 52C. A lead 4C is also joined to the wiring portion 52C.

[0163] 15, the wiring portion 52D is disposed on the x2 side in the x direction relative to the wiring portion 52C. A wire 6L, which is joined to the second control element 8B, is joined to the wiring portion 52D. A lead 4D is also joined to the wiring portion 52D.

[0164] 15, the wiring portions 52E, 52F, and 52G are arranged on the x2 side in the x direction relative to the wiring portion 52D. A wire 6L that is joined to the second control element 8B is joined to each of the wiring portions 52E, 52F, and 52G. Furthermore, as shown in FIG. 15, a corresponding one of the leads 4E, 4F, and 4G is joined to each of the wiring portions 52E, 52F, and 52G.

[0165] The second control element 8B is mounted on the wiring portion 52H. A lead 4H is also joined to the wiring portion 52H. As shown in FIG. 15 , the wiring portion 52H includes a pad portion 521H. The pad portion 521H is a portion of the wiring portion 52H to which the second control element 8B is joined. The pad portion 521H has a rectangular shape in a plan view.

[0166] The first control element 8A is mounted on the wiring portion 52R. A lead 4R is also joined to the wiring portion 52R. As shown in FIG. 15 , the wiring portion 52R includes a pad portion 521R. The pad portion 521R is a portion of the wiring portion 52R to which the first control element 8A is joined. The pad portion 521R has a rectangular shape in a plan view.

[0167] 15 , the plurality of wiring portions 52Q, 52J, 52K, 52L, 52M, and 52N are disposed on the x2 side in the x direction with respect to the wiring portion 52H. A wire 6L, which is joined to the first control element 8A, is joined to each of the plurality of wiring portions 52Q, 52J, 52K, 52L, 52M, and 52N. Furthermore, as shown in FIG. 15 , a corresponding one of the plurality of leads 4Q, 4J, 4K, 4L, 4M, and 4N is joined to each of the plurality of wiring portions 52Q, 52J, 52K, 52L, 52M, and 52N.

[0168] 15, the leads 4P are joined to the wiring portion 52P. In this embodiment, the wires 6L are not joined to the wiring portion 52P.

[0169] As shown in FIG. 15, the portions of the wiring portions 52A to 52H, 52J to 52N, 52P to 52R to which the leads 4A to 4H, 4J to 4N, 4P to 4R corresponding to the wiring portions 52A to 52H, 52J to 52N, 52P to 52R are joined are arranged along the periphery of the support substrate 51 in a plan view.

[0170] The plurality of bonding portions 53A to 53D are each formed on the support substrate 51. As shown in FIG. 18 , each of the bonding portions 53A to 53D is formed on the first surface 511 of the support substrate 51, similar to each of the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R. As shown in FIG. 18 , the bonding portion 53A is arranged below the plurality of mounting portions 311A, 312A, and 313A of the lead 3A (on the z2 side in the z direction), the bonding portion 53B is arranged below the mounting portion 31B of the lead 3B (on the z2 side in the z direction), the bonding portion 53C is arranged below the mounting portion 31C of the lead 3C (on the z2 side in the z direction), and the bonding portion 53D is arranged below the mounting portion 31D of the lead 3D (on the z2 side in the z direction). The materials constituting each of the joints 53A-53D are not particularly limited and are made of a material capable of bonding the support substrate 51 and each of the leads 3A-3D. Each of the joints 53A-53D is made of, for example, a conductive material. The conductive material constituting each of the joints 53A-53D is not particularly limited, but examples include Ag, Cu, Au, etc. Each of the joints 53A-53D contains the same conductive material as that constituting each of the wiring portions 52A-52H, 52J-52N, and 52P-52R. Note that each of the joints 53A-53D may contain copper instead of silver, or may contain gold instead of silver or copper. Alternatively, each of the joints 53A-53D may contain Ag-Pt or Ag-Pd. The method for forming each of the bonding portions 53A to 53D is not limited, and for example, like the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R, they can be formed by printing a paste containing these metals and then firing it. Note that the material of each of the bonding portions 53A to 53D does not have to be conductive. Furthermore, the wiring pattern 52 does not have to include each of the multiple bonding portions 53A to 53D.

[0171] In the semiconductor device A2, the plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R are each joined to a wiring pattern 52. In addition, compared to the semiconductor device A1, the semiconductor device A2 further includes a lead 4Z.

[0172] 15, multiple leads 4A to 4H, 4J to 4N, and 4P to 4R are arranged on the x2 side in the x direction with respect to lead 4Z. While lead 4A will be described in detail below, the other leads 4B to 4H, 4J to 4N, and 4P to 4R also include similar constituent parts. In this case, the "A" in each constituent part of lead 4A is replaced with "B" to "H," "J" to "N," and "P" to "R," respectively, to form the constituent parts of each of leads 4B to 4H, 4J to 4N, and 4P to 4R.

[0173] As shown in FIG. 15 and other figures, the lead 4A includes a terminal portion 42A, a linking portion 44A, and a bonding portion 46A. The terminal portion 42A of the semiconductor device A2 is configured similarly to the terminal portion 42A of the semiconductor device A1. The linking portion 44A connects the terminal portion 42A and the bonding portion 46A. The bonding portion 46A is bonded to the wiring portion 52A via a conductive bonding material 49. Similarly, the bonding portions 46B (46C to 46H, 46J to 46N, 46P to 46R) are bonded to the wiring portions 52B (52C to 52H, 52J to 52N, 52P to 52R) via the conductive bonding material 49. The conductive bonding material 49 may be, for example, solder, a metal paste material, or a sintered metal. As shown in FIG. 19, a through-hole 461C is formed in the bonding portion 46C. Alternatively, the through-hole 461C may not be formed in the bonding portion 46C. Although through holes are also formed in the other joints 46A, 46B, 46D to 46H, 46J to 46N, and 46P to 46R, the through holes may not necessarily be formed.

[0174] The lead 4Z is disposed on the x1 side in the x direction relative to the lead 4A. The lead 4Z is not electrically connected to any of the first switch sections 1, the second switch sections 2, the first control element 8A, and the second control element 8B. As shown in FIG. 15 , the lead 4Z includes a pad section 43Z and a protrusion 45Z. The pad section 43Z and the protrusion 45Z are connected to each other.

[0175] The pad portion 43Z is covered with the sealing member 7. As shown in Fig. 15 , the pad portion 43Z does not overlap the support substrate 51 in a plan view. As shown in Fig. 15 , the protrusion 45Z extends from the pad portion 43Z toward the y1 side in the y direction and protrudes from the sealing member 7.

[0176] The semiconductor device A2 according to this embodiment can also achieve the same functions and effects as the semiconductor device A1. For example, like the semiconductor device A1, the semiconductor device A2 has a more preferable structure in a configuration in which multiple switching elements (switching elements 11 and 12) are operated as a single first switch section 1.

[0177] The semiconductor device A2 includes a support substrate 51 and a wiring pattern 52 formed on a first surface 511. The wiring pattern 52 includes multiple wiring portions 52A-52H, 52J-52N, and 52P-52R. The multiple wiring portions 52A-52H, 52J-52N, and 52P-52R transmit control signals (e.g., the first input signal and the second input signal) used by the first control element 8A and the second control element 8B to control the multiple first switch sections 1 and the multiple second switch sections 2, forming a transmission path for the control signals. The multiple wiring portions 52A-52H, 52J-52N, and 52P-52R are formed, for example, by printing a paste containing Ag and then firing it. This configuration allows for thinner and denser transmission paths for the control signal transmission paths compared to when the transmission paths are formed using, for example, a metal lead frame. Therefore, the semiconductor device A2 can be highly integrated.

[0178] FIG. 20 illustrates a semiconductor device A21 according to a modification of the second embodiment. FIG. 20 is a cross-sectional view of the semiconductor device A21, corresponding to the cross section illustrated in FIG. 19 . The z-direction dimension of the second control element 8B of the semiconductor device A21 is larger than the z-direction dimension of the second control element 8B of the semiconductor device A2. While FIG. 20 illustrates the relationship between the second control element 8B and the fifth arm 2B (each of the switching element 21B, the switching element 22B, and the protection element 23B), the relationship between the second control element 8B and the fourth arm 2A and the relationship between the second control element 8B and the sixth arm 2C may be similar. Furthermore, the relationship between the first control element 8A and each of the first switch sections 1 (each of the first arm 1A, the second arm 1B, and the third arm 1C) may be similar.

[0179] 20 , in the semiconductor device A21, there is a difference in height in the z direction between the upper surface of the mounting portion 312A (the surface to which the switching element 21B, the switching element 22B, and the protective element 23B are bonded) and the upper surface of the pad portion 521H (the surface to which the second control element 8B is bonded). Therefore, even if the thickness of the second control element 8B is greater than the thicknesses of the switching element 21B, the switching element 22B, and the protective element 23B, the element main surface 21 a of the switching element 21B, the element main surface 22 a of the switching element 22B, and the element main surface 23 a of the protective element 23B, and the upper surface (the surface facing the z1 side in the z direction) of the second control element 8B are at the same (or approximately the same) height.

[0180] The semiconductor device A21 also provides the same functions and effects as the semiconductor device A2. In the semiconductor device A21, the element main surfaces 21 a of the switching elements 21, 22 a of the switching elements 22, and the element main surfaces 23 a of the protective elements 23 in each second switch section 2 are at the same (or approximately the same) height as the upper surface (surface facing the z1 side in the z direction) of the second control element 8B, which makes it easy to join the wires 61Q, 62Q, 6J, and 6K.

[0181] In the semiconductor device A21, the switching elements 21B, 22B, and 23B have the same (or approximately the same) thickness, but if they are different types, their thicknesses may differ. In such a case, for example, by partially changing the thickness of the lead 3A (mounting portion 312A), it is possible to align the heights of the element main surface 21 a of the switching element 21B, the element main surface 22 a of the switching element 22B, and the element main surface 23 a of the protection element 23B.

[0182] As can be seen from this modification, in the semiconductor device of the present disclosure, the thicknesses of switching element 21, switching element 22, and protective element 23, and the thickness of second control element 8B may be different from each other. In this case, by adjusting the thickness or position of lead 3A and wiring portion 52H, it is possible to make main surface 21a of switching element 21, main surface 22a of switching element 22, and main surface 23a of protective element 23 the same height as the top surface (surface facing z1 in the z direction) of second control element 8B.

[0183] 21 and 22 show a semiconductor device A3 according to the third embodiment. The semiconductor device A3 differs from the semiconductor device A2 in the following respects. That is, as shown in FIGS. 21 and 22, the planar size of each switching element 11 and the planar size of each switching element 21 are larger.

[0184] As described above, each switching element 11 contains Si as a semiconductor material, and each switching element 12 contains SiC as a semiconductor material. In this configuration, if the switching elements 11 and 12 have the same (or approximately the same) planar size, the on-resistance of the switching element 11 may be larger than the on-resistance of the switching element 12. Therefore, in the semiconductor device A3, as shown in FIG. 21 , the planar size of the switching element 11 is larger than the planar size of the switching element 11 of the semiconductor device A1. This larger planar size of the switching element 11 reduces the on-resistance of the switching element 11, resulting in a characteristic value close to the on-resistance of the switching element 12. Note that in the example shown in FIG. 21 , the x-direction dimension of the switching element 11 remains the same (or approximately the same) as the x-direction dimension of the switching element 12, while the y-direction dimension of the switching element 11 is larger than the y-direction dimension of the switching element 12. Increasing the planar size of the switching element 11 in this manner can prevent wasted space from being generated in each of the mounting portions 31B, 31C, and 31D.

[0185] Similarly, each switching element 21 contains Si as a semiconductor material, and each switching element 22 contains SiC as a semiconductor material. In this configuration, if the planar sizes of the switching elements 21 and 22 are the same (or approximately the same), the on-resistance of the switching element 21 may be larger than the on-resistance of the switching element 22. Therefore, in the semiconductor device A3, as shown in FIG. 22 , the planar size of the switching element 21 is larger than the planar size of the switching element 21 of the semiconductor device A1. Because the planar size of the switching element 21 is larger in this way, the on-resistance of the switching element 21 decreases, and the on-resistance has a characteristic value close to the on-resistance of the switching element 22. Note that in the example shown in FIG. 22 , the x-direction dimension of the switching element 21 remains the same (or approximately the same) as the x-direction dimension of the switching element 22, but the y-direction dimension of the switching element 21 is larger than the y-direction dimension of the switching element 22. By increasing the size of the switching element 21 in a plan view in this way, it is possible to prevent wasted space from being generated in each of the mounting portions 311A, 312A, and 313A.

[0186] The semiconductor device A3 according to this embodiment also exhibits the same functions and effects as the semiconductor device A1. As can be understood from this embodiment, the semiconductor device according to the present disclosure is not limited to a configuration in which the switching elements 11 and 12 have the same (or approximately the same) planar size, but also includes a configuration in which the switching elements have different planar sizes. The same applies to the switching elements 21 and 22.

[0187] 23 shows a semiconductor device A31 according to a modification of the second embodiment. The semiconductor device A31 differs from the semiconductor device A3 in the following respects. That is, in each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the switching element 11 is disposed on the y1 side in the y direction relative to the switching element 12. That is, the switching element 11 is located between the first control element 8A and the switching element 12 in the y direction. In this modification, the switching element 11 is an example of a "second switching element" as defined in the claims, and the switching element 12 is an example of a "first switching element" as defined in the claims.

[0188] In the semiconductor device A31, each switching element 12 does not have a main surface wiring portion 125. On the other hand, each switching element 11 has a main surface wiring portion 115. The main surface wiring portion 115 is provided on the element main surface 11a, similar to the electrode 113. The main surface wiring portion 115 is not conductive to the switching function portion of the switching element 11. The main surface wiring portion 115 is configured similarly to the main surface wiring portion 125 in the switching element 12.

[0189] In the semiconductor device A31, the multiple connection members 6 include a wire 6G instead of the two wires 61G and 62G, and two wires 61H and 62H instead of the wire 6H. As shown in Fig. 23 , the wire 6G is joined to the electrode 81 of the first control element 8A and the electrode 113 of the switching element 11, thereby providing electrical continuity therebetween. The wire 61H is joined to the electrode 81 of the first control element 8A and the main surface wiring portion 115 of the switching element 11, thereby providing electrical continuity therebetween. The wire 62H is joined to the main surface wiring portion 115 of the switching element 11 and the electrode 123 of the switching element 12, thereby providing electrical continuity therebetween.

[0190] The semiconductor device A31 also provides the same functions and effects as the semiconductor device A3. Furthermore, the semiconductor device A31 allows the wires 6D, 6E, and 6F to be shorter than the semiconductor device A3.

[0191] In the above-described semiconductor device A31, the positional relationship between the switching element 11 and the switching element 12 in each first switch section 1 is reversed compared to the semiconductor device A3, but instead of or in addition to this, the switching element 21 and the switching element 22 in each second switch section 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C) may also be configured in a similar manner. In this case, the wires 6A, 6B, and 6C can be shortened.

[0192] 24 to 27 show a semiconductor device A4 according to the fourth embodiment. The semiconductor device A4 differs from the semiconductor device A1 in the following respects. That is, as shown in FIGS. 24, 25, and 27, each first switch section 1 does not have a protective element 13. Furthermore, as shown in FIGS. 24, 26, and 27, each second switch section 2 does not have a protective element 23.

[0193] The switching element 11 of each first switch unit 1 is a reverse-conducting IGBT and includes a switching function unit and a diode function unit as shown in FIG. 27 . The switching function unit operates as an IGBT, and the diode function unit operates as a freewheeling diode. That is, each switching element 11 of this embodiment incorporates a diode function unit (freewheeling diode). For example, each switching element 11 is a semiconductor device A1 in which the switching element 11 and the protection element 13 are integrated into a single chip, and incorporates a diode function unit (freewheeling diode). As shown in FIG. 27 , in each switching element 11, the switching function unit and the diode function unit are electrically connected in an inverse-parallel relationship.

[0194] Similarly, the switching element 21 of each second switch unit 2 is a reverse-conducting IGBT and includes a switching function unit and a diode function unit, as shown in FIG. 27 . The switching function unit operates as an IGBT, and the diode function unit operates as a freewheeling diode. That is, each switching element 21 of this embodiment has a built-in diode function unit (freewheeling diode). For example, each switching element 21 is a single chip that combines the switching element 21 and the protection element 23 of the semiconductor device A1. As shown in FIG. 27 , in each switching element 21, the switching function unit and the diode function unit are electrically connected in an anti-parallel relationship.

[0195] The semiconductor device A4 according to this embodiment also provides the same functions and effects as the semiconductor device A1. For example, like the semiconductor device A1, the semiconductor device A4 has a more preferable structure in a configuration in which a plurality of switching elements (switching elements 11 and 12) are operated as a single first switch section 1.

[0196] 28 to 34 show other configuration examples of the main surface wiring portion 125 (switching element 12). FIGS. 28 to 34 are enlarged plan views of essential parts showing the main surface wiring portion 125 (switching element 12) according to each modification. While FIGS. 28 to 34 show an example in which the configuration of the switching element 12 is modified in the semiconductor device A1, similar configurations are also possible in the other semiconductor devices A2, A3, and A4. Additionally, while FIGS. 28 to 34 show other configuration examples of the main surface wiring portion 125 of the switching element 12, the main surface wiring portion 225 of the switching element 22 can also be configured in a similar manner.

[0197] In the example shown in Fig. 28 , the dimension in the x direction of the connecting portion 125c is smaller than the dimensions in the x direction of each of the first pad portion 125a and the second pad portion 125b. With this configuration, the main surface wiring portion 125 has a dumbbell shape in plan view, as shown in Fig. 28 . The main surface wiring portion 125 shown in Fig. 28 has a smaller area in plan view than the main surface wiring portion 125 in the semiconductor device A1, and therefore the manufacturing cost of the switching element 12 can be reduced.

[0198] 29, the second pad portion 125b is located on the x1 side in the x direction and on the y2 side in the y direction relative to the first pad portion 125a. In the example shown in Fig. 29, the main surface wiring portion 125 has a rectangular shape in plan view with the first pad portion 125a and the second pad portion 125b as two diagonal corners of the four corners. The main surface wiring portion 125 shown in Fig. 29 has a larger area in plan view than the main surface wiring portion 125 in the semiconductor device A1, and therefore has a higher degree of freedom in the bonding positions of the wires 61G, 62G.

[0199] In the example shown in FIG. 30 , the main surface wiring portion 125 is arranged along a portion of the periphery of the element main surface 12a in a planar view, and is strip-shaped along the edge on the x2 side in the x direction. In this disclosure, the periphery refers to the entire periphery of the object (e.g., the periphery in a planar view of the element main surface 12a), and the edge refers to any side of the periphery of the object (e.g., the periphery in a planar view of the element main surface 12a). In this main surface wiring portion 125, the y-direction dimension of the connecting portion 125c is larger than that of the main surface wiring portion 125 in the semiconductor device A1. In the illustrated example, the main surface wiring portion 125 straddles both sides of the center in the y direction on the element main surface 12a. Furthermore, no electrodes 122 are arranged on either side of the main surface wiring portion 125 in the y direction. In the configuration shown in FIG. 30 , the main surface wiring portion 125 is also formed on the y2 side in the y direction of the center in the y direction of the element main surface 12a. 30, the wire 62G can be made even shorter than in the semiconductor device A1. Also, in the configuration shown in Fig. 30, the main surface wiring portion 125 is formed along the edge on the x2 side in the x direction of the element main surface 12a, so that an appropriate planar area of ​​the electrode 122 can be ensured. In other words, in the configuration shown in Fig. 30, the main surface wiring portion 125 does not become an obstacle when joining the wire 6E (6D, 6F).

[0200] In the examples shown in FIGS. 31 and 32 , the position of the electrode 123 is changed from that of the example shown in FIG. 30 . In the example shown in FIG. 30 , the electrode 123 is arranged on the x2 side of the x-direction, which is one of three equal parts of the element main surface 12 a divided in the x-direction. Meanwhile, in the example shown in FIG. 31 , the electrode 123 is arranged in the center of the x-direction, which is one of three equal parts of the element main surface 12 a divided in the x-direction. In the example shown in FIG. 32 , the electrode 123 is arranged on the x1 side of the x-direction, which is one of three equal parts of the element main surface 12 a divided in the x-direction. These configurations also achieve the same effect as the configuration shown in FIG. 30 . Furthermore, in the configurations shown in FIGS. 31 and 32 , the distance between the main surface wiring portion 125 and the electrode 123 can be increased compared to the configuration shown in FIG. 30 . This can prevent unintended short-circuiting between the wire 61G bonded to the main surface wiring portion 125 and the wire 6H bonded to the electrode 123.

[0201] 33 , the main surface wiring portion 125 is disposed in the center of one of three equal parts obtained by dividing the element main surface 12 a in the x direction. As can be understood from this modification, in the semiconductor device of the present disclosure, the position of the main surface wiring portion 125 can be changed as appropriate depending on the positional relationship with the first control element 8A and the switching element 11.

[0202] In the example shown in FIG. 34 , the main surface wiring portion 125 is arranged along part of the periphery of the element main surface 12a in a plan view. In the example shown in FIG. 34 , the main surface wiring portion 125 includes a first band portion 1251 and a second band portion 1252. The first band portion 1251 and the second band portion 1252 are integrally formed. The first band portion 1251 extends along the edge of the element main surface 12a on the x2 side in the x direction in a plan view. The first pad portion 125a is part of the first band portion 1251. The second band portion 1252 extends along the edge of the element main surface 12a on the y2 side in the y direction in a plan view. The second pad portion 125b is part of the second band portion 1252.

[0203] In each of the above-described embodiments and modifications, it is possible to further reduce surplus portions of the mounting portions 311A, 312A, 313A, 31B, 31C, and 31D that do not mount any of the plurality of switching elements 11, the plurality of switching elements 12, the plurality of protection elements 13, the plurality of switching elements 21, the plurality of switching elements 22, and the plurality of protection elements 23. Reducing the surplus portions in this way is preferable in terms of reducing the size of the semiconductor device in a plan view.

[0204] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. For example, the semiconductor device according to the present disclosure includes embodiments according to the following supplementary notes. Supplementary Note 1. a first control element that inputs a first drive signal to the first switching element and the second switching element; a mounting portion on which the first switching element and the second switching element are mounted; and a plurality of wires including a first wire, a second wire, and a third wire, wherein in each of the at least one first switch portion, the first switching element and the second switching element are electrically connected in parallel, the first switching element has a first main surface facing one side in a thickness direction of the mounting portion and a first control electrode arranged on the first main surface, the second switching element has a second main surface facing one side in the thickness direction, a second control electrode and a main surface wiring portion that are arranged on the second main surface, the first wire is bonded to the first control element and the main surface wiring portion, the second wire is bonded to the main surface wiring portion and the first control electrode, and the third wire is bonded to the first control element and the second control electrode, A semiconductor device according to Supplementary Note 1, wherein the first control element is disposed on one side of the first switching element and the second switching element in a first direction orthogonal to the thickness direction, and the second switching element is disposed between the first control element and the first switching element in the first direction. Supplementary Note 2. The semiconductor device according to Supplementary Note 1, wherein the main surface wiring section includes a first pad section to which the first wire is joined and a second pad section to which the second wire is joined. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein the first pad section and the second pad section are disposed along the first direction when viewed in the thickness direction, and the first pad section is located closer to the first control element in the first direction than the second pad section. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein the main surface wiring section includes a connecting section connecting the first pad section and the second pad section.Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the dimensions of the coupling portion in the thickness direction and a second direction orthogonal to the first direction are the same as the dimensions of each of the first pad portion and the second pad portion in the second direction. Supplementary Note 6. The semiconductor device according to Supplementary Note 4, wherein the dimensions of the coupling portion in the thickness direction and the second direction orthogonal to the first direction are smaller than the dimensions of each of the first pad portion and the second pad portion in the second direction. Supplementary Note 7. The semiconductor device according to Supplementary Note 2, wherein the second pad portion is located on one side of the first pad portion in the first direction and on the other side of the second direction orthogonal to the thickness direction and the first direction. Supplementary Note 8. The semiconductor device according to any of Supplementary Notes 1 to 7, wherein the second control electrode is located closer to the first control element in the first direction than a center of the second main surface in the first direction. Supplementary Note 9. The semiconductor device according to Supplementary Note 8, wherein the second control electrode and the main surface wiring portion are each located in a center portion of the second main surface in the second direction orthogonal to the thickness direction and the first direction. Supplementary Note 10. The semiconductor device according to Supplementary Note 8, wherein the main surface wiring portion is arranged along a part of the periphery of the second main surface as seen in the thickness direction.Supplementary Note 11. The semiconductor device according to Supplementary Note 10, wherein the main surface wiring portion is strip-shaped along an edge of the second main surface on one side in the second direction as seen in the thickness direction.Supplementary Note 12. The semiconductor device according to Supplementary Note 10, wherein the main surface wiring portion includes a first strip-shaped portion along an edge of the second main surface on one side in the second direction as seen in the thickness direction, and a second strip-shaped portion along an edge of the second main surface on the other side in the first direction as seen in the thickness direction, and the first strip-shaped portion and the second strip-shaped portion are integrally formed.Supplementary Note 13. The semiconductor device according to any of Supplements 1 to 12, wherein the at least one first switch portion includes a plurality of first switch portions, and the plurality of first switch portions include a first arm, a second arm, and a third arm each having a first switching element and a second switching element.Supplementary Note 14. The semiconductor device according to Supplementary Note 13, wherein the first arm, the second arm, and the third arm are arranged in a second direction perpendicular to the thickness direction and the first direction, and the second arm is located between the first arm and the third arm in the second direction. the semiconductor device further comprises at least one second switch section each including a third switching element and a fourth switching element; and a second control element inputting a second drive signal to the third switching element and the fourth switching element of each of the at least one second switch section, wherein in each of the at least one second switch section, the third switching element and the fourth switching element are electrically connected in parallel, the third switching element has a third main surface facing one side in the thickness direction and a third control electrode arranged on the third main surface, the fourth switching element has a fourth main surface facing one side in the thickness direction, a fourth control electrode and a second main surface wiring section arranged on the fourth main surface, the plurality of wires include a fourth wire, a fifth wire and a sixth wire, the fourth wire is bonded to the second control element and the second main surface wiring section, the fifth wire is bonded to the second main surface wiring section and the third control electrode, and the sixth wire is bonded to the second control element and the fourth control electrode, The semiconductor device according to Supplementary Note 13 or Supplementary Note 14, wherein the second control element is arranged on one side of the third switching element and the fourth switching element in the first direction, and the fourth switching element is arranged between the second control element and the third switching element in the first direction.Supplementary Note 16. The semiconductor device according to Supplementary Note 15, wherein the at least one second switch unit includes a plurality of second switch units, the plurality of second switch units include a fourth arm, a fifth arm, and a sixth arm, the fourth arm, the fifth arm, and the sixth arm are arranged in a second direction orthogonal to the thickness direction and the first direction, and the fifth arm is located between the fourth arm and the sixth arm in the second direction.Supplementary Note 17. The semiconductor device according to Supplementary Note 16, wherein the first arm is a lower arm, the fourth arm is an upper arm, and the first arm and the fourth arm are electrically connected in series to form a first phase of a three-phase AC circuit, the second arm is a lower arm, and the fifth arm is an upper arm, and the second arm and the fifth arm are electrically connected in series to form a second phase of the three-phase AC circuit, and the third arm is a lower arm, and the sixth arm is an upper arm, and the third arm and the sixth arm are electrically connected in series to form a third phase of the three-phase AC circuit.

[0205] A1, A2, A21, A3, A31, A4: semiconductor device 10U: first phase 10V: second phase 10W: third phase 1: first switch section 1A: first arm 1B: second arm 1C: third arm 11, 11A, 11B, 11C: switching element 11a: element main surface 11b: element back surface 111, 112, 113: electrodes 12, 12A, 12B, 12C: switching element 12a: element main surface 12b: element back surface 121, 122, 123: electrodes 115, 125: main surface wiring section 125a: first pad section 125b: second pad section 125c: connecting section 1251: first strip-shaped section 1252: second strip-shaped section 13, 13A, 13B, 13C: Protection element 13a: Element main surface 13b: Element back surface 131, 132: Electrodes 19: Conductive bonding material 2: Second switch portion 2A: Fourth arm 2B: Fifth arm 2C: Sixth arm 21, 21A, 21B, 21C: Switching element 21a: Element main surface 21b: Element back surface 211, 212, 213: Electrodes 225: Main surface wiring portion 225a: Third pad portion 225b: Fourth pad portion 225c: Connection portion 22, 22A, 22B, 22C: Switching element 22a: Element main surface 22b: Element back surface 221, 222, 223: Electrodes 23, 23A, 23B, 23C: Protection element 23a: Element main surface 23b: Element back surface 231, 232: Electrode 29: Conductive bonding material 3A to 3G, 3Z: Lead 301 to 306: Edge 311A, 312A, 313A, 31B to 31D: Mounting part 32A to 32G, 32Z: Terminal part 33A to 33G, 33Z: Pad part 34A to 34D: Connection part 39: Bonding material 4A to 4H, 4J to 4N, 4P to 4R, 4Z: Lead 41H, 41R: Mounting part 42A to 42H, 42J to 42N, 42P to 42R: Terminal part 43A to 43H, 43J to 43N, 43P to 43R, 43Z: Pad part 44A to 44H, 44J to 44N, 44P to 44R: Connection part 45H: Projection part 45Z: Projection part 46A to 46H, 46J to 46N, 46P to 46R: Joint portion 461C: Through hole 49: Conductive bonding material 51: Support substrate 511: First surface 512: Second surface 513: Third surface 514: Fourth surface 515: Fifth surface 516: Sixth surface 52: Wiring patterns 52A to 52H,52J to 52N, 52P to 52R: Wiring portion 521H, 521R: Pad portion 53A to 53D: Bonding portion 6: Connection member 6A to 6H, 6J to 6L: Wire 61G, 61H, 61Q, 62G, 62H, 62Q: Wire 7: Sealing member 71: Resin main surface 72: Resin back surface 73 to 76: Resin side surface 731, 741, 761: Recess 8A: First control element 8B: Second control element 81, 82, 83: Electrode 85: Bonding material 89U, 89V, 89W: Electronic component 891: Conductive bonding material,

Claims

1. at least one first switch section each including a first switching element and a second switching element; a first control element that inputs a first drive signal to the first switching element and the second switching element; a mounting portion on which the first switching element and the second switching element are mounted; a plurality of wires including a first wire, a second wire and a third wire; Equipped with In each of the at least one first switch section, the first switching element and the second switching element are electrically connected in parallel, the first switching element has a first main surface facing one side in a thickness direction of the mounting portion and a first control electrode disposed on the first main surface; the second switching element has a second main surface facing one side in the thickness direction, and a second control electrode and a main surface wiring portion disposed on the second main surface, the first wire is joined to the first control element and the main surface wiring portion, the second wire is joined to the main surface wiring portion and the first control electrode, the third wire is bonded to the first control element and the second control electrode; the first control element is disposed on one side of the first switching element and the second switching element in a first direction perpendicular to the thickness direction, The second switching element is disposed between the first control element and the first switching element in the first direction.

2. 2 . The semiconductor device according to claim 1 , wherein the main surface wiring portion includes a first pad portion to which the first wire is joined and a second pad portion to which the second wire is joined.

3. The first pad portion and the second pad portion are arranged along the first direction when viewed in the thickness direction, The semiconductor device according to claim 2 , wherein the first pad portion is located closer to the first control element than the second pad portion is in the first direction.

4. The semiconductor device according to claim 3 , wherein the main surface wiring portion includes a connecting portion that connects the first pad portion and the second pad portion.

5. 5. The semiconductor device according to claim 4, wherein a dimension of said connecting portion in a second direction perpendicular to said thickness direction and said first direction is the same as a dimension of each of said first pad portion and said second pad portion in said second direction.

6. 5. The semiconductor device according to claim 4, wherein a dimension of said connecting portion in a second direction perpendicular to said thickness direction and said first direction is smaller than a dimension of each of said first pad portion and said second pad portion in said second direction.

7. 3. The semiconductor device according to claim 2, wherein the second pad portion is located on one side of the first pad portion in the first direction and on the other side of the first pad portion in a second direction perpendicular to the thickness direction and the first direction.

8. 8. The semiconductor device according to claim 1, wherein the second control electrode is located closer to the first control element in the first direction than a center of the second main surface in the first direction.

9. 9. The semiconductor device according to claim 8, wherein on the second main surface, the second control electrode and the main surface wiring portion are each disposed in a central portion in a second direction perpendicular to the thickness direction and the first direction.

10. The semiconductor device according to claim 8 , wherein the main surface wiring portion is disposed along a part of a periphery of the second main surface as viewed in the thickness direction.

11. 11. The semiconductor device according to claim 10, wherein the main surface wiring portion is in a band shape along one edge of the second main surface in a second direction perpendicular to the thickness direction and the first direction when viewed in the thickness direction.

12. the main surface wiring portion includes a first band-shaped portion along one edge of the second main surface in a second direction perpendicular to the thickness direction and the first direction, as viewed in the thickness direction, and a second band-shaped portion along the other edge of the second main surface in the first direction, as viewed in the thickness direction; The semiconductor device according to claim 10 , wherein the first stripe portion and the second stripe portion are integrally formed.

13. The at least one first switch unit includes a plurality of first switch units, 8. The semiconductor device according to claim 1, wherein said plurality of first switch sections include a first arm, a second arm and a third arm each having a first switching element and a second switching element.

14. the first arm, the second arm, and the third arm are arranged in a second direction perpendicular to the thickness direction and the first direction, The semiconductor device according to claim 13 , wherein the second arm is located between the first arm and the third arm in the second direction.

15. at least one second switch section each including a third switching element and a fourth switching element; a second control element that inputs a second drive signal to the third switching element and the fourth switching element of each of the at least one second switch unit; Further equipped with In each of the at least one second switch units, the third switching element and the fourth switching element are electrically connected in parallel, the third switching element has a third main surface facing one side in the thickness direction and a third control electrode disposed on the third main surface, the fourth switching element has a fourth main surface facing one side in the thickness direction, and a fourth control electrode and a second main surface wiring portion disposed on the fourth main surface, the plurality of wires includes a fourth wire, a fifth wire, and a sixth wire; the fourth wire is joined to the second control element and the second main surface wiring portion, the fifth wire is joined to the second main surface wiring portion and the third control electrode, the sixth wire is joined to the second control element and to the fourth control electrode; the second control element is disposed on one side in the first direction relative to the third switching element and the fourth switching element, The semiconductor device according to claim 13 , wherein the fourth switching element is disposed between the second control element and the third switching element in the first direction.

16. the at least one second switch unit includes a plurality of second switch units, the plurality of second switch units include a fourth arm, a fifth arm, and a sixth arm, the fourth arm, the fifth arm, and the sixth arm are arranged in a second direction perpendicular to the thickness direction and the first direction, The semiconductor device according to claim 15 , wherein the fifth arm is located between the fourth arm and the sixth arm in the second direction.

17. the first arm is a lower arm, and the fourth arm is an upper arm, the first arm and the fourth arm are electrically connected in series to constitute a first phase of a three-phase AC circuit, the second arm is a lower arm, and the fifth arm is an upper arm, the second arm and the fifth arm are electrically connected in series to form a second phase of the three-phase AC circuit, 17. The semiconductor device according to claim 16, wherein the third arm is a lower arm and the sixth arm is an upper arm, the third arm and the sixth arm being electrically connected in series to constitute a third phase of the three-phase AC circuit.