Substrate processing device and substrate processing method

Abstract

A substrate processing device according to one aspect of the present disclosure comprises: a processing container which accommodates a plurality of substrates arranged in multiple stages; a processing gas supply pipe which extends in the arrangement direction of the plurality of substrates and supplies a processing gas into the processing container; and a pair of inert gas supply pipes which are provided at positions that sandwich the processing gas supply pipe in the circumferential direction of the substrates, extend in the arrangement direction, and supply an inert gas into the processing container, wherein the pair of inert gas supply pipes are configured to spray the inert gas toward the inner surface of the side wall of the processing container.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] In a vertical heat treatment apparatus, a technique is known in which a pair of inert gas supply nozzles are arranged along the circumferential direction of a substrate so as to sandwich a process gas supply nozzle on both sides (see, for example, Patent Document 1).

[0003] JP 2009-206489 A

[0004] The present disclosure provides techniques for improving process uniformity.

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a processing vessel that accommodates a plurality of substrates arranged in multiple stages, a processing gas supply pipe that extends along the arrangement direction of the plurality of substrates and supplies a processing gas into the processing vessel, and a pair of inert gas supply pipes that are arranged on either side of the processing gas supply pipe along the circumferential direction of the substrates and extend along the arrangement direction and supply an inert gas into the processing vessel, and the pair of inert gas supply pipes are configured to spray the inert gas toward the inner surface of a side wall of the processing vessel.

[0006] The present disclosure improves process uniformity.

[0007] FIG. 1 is a vertical cross-sectional view showing a substrate processing apparatus according to a first embodiment. FIG. 2 is a horizontal cross-sectional view showing a substrate processing apparatus according to the first embodiment. FIG. 3 is a diagram explaining the orientation of gas holes. FIG. 4 is a diagram explaining the horizontal gas flow. FIG. 5 is a diagram explaining the horizontal gas flow. FIG. 6 is a diagram explaining the horizontal gas flow. FIG. 7 is a diagram explaining the vertical gas flow. FIG. 8 is a horizontal cross-sectional view showing a substrate processing apparatus according to a second embodiment. FIG. 9 is a diagram explaining the orientation of gas holes. FIG. 10 is a diagram explaining the orientation of gas holes. FIG. 11 is a diagram explaining the orientation of gas holes. FIG. 12 is a diagram explaining the orientation of gas holes.

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] 1 to 7, a substrate processing apparatus 1 according to a first embodiment will be described. As shown in Fig. 1, the substrate processing apparatus 1 is a batch-type apparatus that processes a plurality of substrates W (e.g., 5 to 100 substrates W) at one time. The substrates W may be, for example, semiconductor wafers.

[0010] The substrate processing apparatus 1 includes a processing chamber 10 , a gas supply unit 30 , an exhaust unit 40 , a heating unit 50 , and a control unit 90 .

[0011] The interior of the processing vessel 10 can be depressurized. The processing vessel 10 accommodates a plurality of substrates W arranged in multiple stages along the vertical direction. The processing vessel 10 has an inner tube 11 and an outer tube 12. The inner tube 11 has a cylindrical shape with a ceiling and an open lower end. The outer tube 12 has a cylindrical shape with a ceiling and an open lower end that covers the outside of the inner tube 11. The inner tube 11 and the outer tube 12 have a double-tube structure arranged coaxially. The inner tube 11 and the outer tube 12 are made of, for example, quartz.

[0012] 2, the inner tube 11 has a first side wall 11a, a second side wall 11b, a third side wall 11c, and a fourth side wall 11d. The first side wall 11a, the second side wall 11b, the third side wall 11c, and the fourth side wall 11d are, for example, formed integrally.

[0013] The first side wall 11a extends along the circumferential direction of the substrates W. The first side wall 11a has an arc shape in a horizontal cross section that is perpendicular to the arrangement direction of the multiple substrates W. A rectangular exhaust slit 15 is formed along the longitudinal direction (vertical direction) of the first side wall 11a in part of the circumferential direction. Gas within the inner tube 11 is exhausted through the exhaust slit 15 into the space P1 between the inner tube 11 and the outer tube 12. The vertical length of the exhaust slit 15 is the same as the vertical length of the boat 16, or is formed so as to extend vertically longer than the vertical length of the boat 16.

[0014] The second sidewall 11b is located radially outward of the substrate W relative to the first sidewall 11a and extends along the circumferential direction of the substrate W. The second sidewall 11b is provided at a different position from the first sidewall 11a in the circumferential direction of the substrate W. The second sidewall 11b has an arc shape in horizontal cross section. In horizontal cross section, the radius R2 of the arc of the second sidewall 11b is larger than the radius R1 of the arc of the first sidewall 11a. The difference in length between the radius R2 and the radius R1 is larger than, for example, the diameters of the gas supply pipes (the first inert gas supply pipe 31a, the process gas supply pipe 32a, and the second inert gas supply pipe 33a) described below. In this case, the gas supply pipes can be accommodated in the nozzle accommodating portion 13 described below. Therefore, there is no need to provide a gas supply pipe between the first sidewall 11a and the substrate W, and the gap between the inner surface of the first sidewall 11a and the outer edge of the substrate W can be narrowed. As a result, it is possible to prevent the film thickness from becoming thicker at the peripheral edge of the substrate W. Furthermore, since the volume inside the inner tube 11 is reduced, the amount of gas consumed can be reduced. The circumferential length of the second side wall 11b is shorter than the circumferential length of the first side wall 11a, for example. The circumferential length of the second side wall 11b is determined, for example, depending on the number of gas supply pipes housed in the nozzle housing portion 13. The second side wall 11b is provided at a position opposite the exhaust slit 15 across the center O of the inner tube 11 (substrate W).

[0015] The third side wall 11c connects one end of the first side wall 11a to one end of the second side wall 11b. The third side wall 11c is continuous with one end of the first side wall 11a and one end of the second side wall 11b. As shown in FIG. 3 , the angle θ1 between the second side wall 11b and the third side wall 11c may be, for example, an obtuse angle. In this case, the inert gas injected from the first inert gas supply pipe 31a (described later) is likely to flow along the inner surface of the first side wall 11a (flow along the circumferential direction of the substrate W). The angle θ1 may be, for example, 100 degrees or more and 150 degrees or less. In this case, the third side wall 11c can function as a flow straightening plate in the circumferential direction of the substrate W. As a result, the inert gas injected from the first inert gas supply pipe 31a (described later) can be efficiently introduced in the circumferential direction of the substrate W, thereby reducing the amount of inert gas used in a predetermined process.

[0016] The angle θ1 may more preferably be, for example, not less than 120 degrees and not more than 130 degrees. In this case, the third side wall 11c can further enhance the flow straightening effect in the peripheral direction of the substrate W.

[0017] The fourth side wall 11d connects the other end of the first side wall 11a to the other end of the second side wall 11b. The fourth side wall 11d is continuous with the other end of the first side wall 11a and the other end of the second side wall 11b. As shown in FIG. 3 , the angle θ2 between the second side wall 11b and the fourth side wall 11d may be, for example, an obtuse angle. In this case, the inert gas injected from the second inert gas supply pipe 33a (described later) is likely to flow along the inner surface of the first side wall 11a (flow along the circumferential direction of the substrate W). The angle θ2 may be, for example, 100 degrees or more and 150 degrees or less. In this case, the fourth side wall 11d can function as a flow straightening plate in the circumferential direction of the substrate W. As a result, the inert gas injected from the second inert gas supply pipe 33a (described later) can be efficiently introduced in the circumferential direction of the substrate W, thereby reducing the amount of inert gas used in a given process.

[0018] The angle θ2 may more preferably be, for example, 120 degrees or more and 130 degrees or less. In this case, the fourth side wall 11d can further enhance the flow straightening effect in the peripheral direction of the substrate W.

[0019] The second side wall 11b, the third side wall 11c, and the fourth side wall 11d extend outward from the first side wall 11a in the radial direction of the substrate W, thereby forming a nozzle accommodating portion 13 that accommodates each gas supply pipe.

[0020] The lower end of the processing vessel 10 is supported by a cylindrical manifold 17. The manifold 17 is made of, for example, stainless steel. A flange 18 is formed at the upper end of the manifold 17. The flange 18 supports the lower end of the outer tube 12. A seal member 19, such as an O-ring, is provided between the flange 18 and the lower end of the outer tube 12. This keeps the inside of the outer tube 12 airtight.

[0021] An annular support member 20 is provided on the inner wall of the upper portion of the manifold 17. The support member 20 supports the lower end of the inner tube 11. A lid 21 is airtightly attached to the opening at the lower end of the manifold 17 via a sealing member 22 such as an O-ring. This airtightly closes the opening at the lower end of the processing vessel 10, i.e., the opening of the manifold 17. The lid 21 is made of, for example, stainless steel.

[0022] A rotating shaft 24 is provided through the center of the lid 21 via a magnetic fluid seal 23. The lower part of the rotating shaft 24 is rotatably supported by an arm 25A of an elevating mechanism 25 comprising a boat elevator.

[0023] A rotating plate 26 is provided at the upper end of the rotating shaft 24. A boat 16 that holds substrates W is placed on the rotating plate 26 via a quartz heat retention stand 27. The boat 16 rotates by rotating the rotating shaft 24. The boat 16 moves up and down integrally with the lid 21 by raising and lowering the lifting mechanism 25. This allows the boat 16 to be inserted into and removed from the processing vessel 10. The boat 16 can be accommodated in the processing vessel 10. The boat 16 holds multiple substrates W approximately horizontally with spacing between them in the vertical direction.

[0024] The gas supply unit 30 includes a first inert gas supply unit 31 , a process gas supply unit 32 , and a second inert gas supply unit 33 .

[0025] The first inert gas supply unit 31 includes a first inert gas supply pipe 31a inside the processing vessel 10 and a first inert gas supply path 31b outside the processing vessel 10. The first inert gas supply path 31b is provided with a first inert gas source 31c, a mass flow controller 31d, and a valve 31e, in this order from upstream to downstream in the gas flow direction. Thus, the supply timing of the inert gas from the first inert gas source 31c is controlled by the valve 31e, and the flow rate is adjusted to a predetermined value by the mass flow controller 31d. The inert gas flows from the first inert gas supply path 31b into the first inert gas supply pipe 31a and is sprayed from the first inert gas supply pipe 31a into the processing vessel 10. The inert gas may be, for example, nitrogen (N ２The inert gas may be, for example, argon (Ar) gas.

[0026] The process gas supply unit 32 includes a process gas supply pipe 32a inside the process vessel 10 and a process gas supply path 32b outside the process vessel 10. The process gas supply path 32b includes, in order from upstream to downstream in the gas flow direction, a process gas source 32c, a mass flow controller 32d, and a valve 32e. The process gas from the process gas source 32c is supplied with a process gas whose supply timing is controlled by the valve 32e and whose flow rate is adjusted to a predetermined value by the mass flow controller 32d. The process gas flows from the process gas supply path 32b into the process gas supply pipe 32a and is then injected into the process vessel 10 from the process gas supply pipe 32a. The process gas may be, for example, a silicon source gas. The process gas may also be, for example, a metal source gas. The process gas may also be, for example, an oxidizing gas or a nitriding gas.

[0027] The second inert gas supply unit 33 includes a second inert gas supply pipe 33a inside the processing vessel 10 and a second inert gas supply path 33b outside the processing vessel 10. The second inert gas supply path 33b is provided with a second inert gas source 33c, a mass flow controller 33d, and a valve 33e, which are arranged in this order from upstream to downstream in the gas flow direction. The supply timing of the inert gas from the second inert gas source 33c is controlled by the valve 33e, and the flow rate is adjusted to a predetermined value by the mass flow controller 33d. The inert gas flows from the second inert gas supply path 33b into the second inert gas supply pipe 33a and is sprayed from the second inert gas supply pipe 33a into the processing vessel 10. The inert gas may be the same as the inert gas from the first inert gas source 31c, for example.

[0028] The gas supply pipes (first inert gas supply pipe 31a, processing gas supply pipe 32a, second inert gas supply pipe 33a) are fixed to the manifold 17. Each gas supply pipe is made of, for example, quartz. Each gas supply pipe is an L-shaped gas supply pipe that extends linearly in the vertical direction near the second side wall 11b in the nozzle accommodating portion 13, bends in an L-shape within the manifold 17, and extends horizontally to penetrate the manifold 17. The gas supply pipes are arranged side by side at intervals along the circumferential direction of the substrate W, and are formed at the same height as each other.

[0029] The first inert gas supply pipe 31 a, the processing gas supply pipe 32 a, and the second inert gas supply pipe 33 a are installed in this order from near the exhaust port 41 along the circumferential direction of the substrate W. The pair of inert gas supply pipes (the first inert gas supply pipe 31 a and the second inert gas supply pipe 33 a) are installed at positions sandwiching the processing gas supply pipe 32 a along the circumferential direction of the substrate W. The first inert gas supply pipe 31 a and the second inert gas supply pipe 33 a are configured to inject inert gas toward the inner surface of the second side wall 11 b, the third side wall 11 c, or the fourth side wall 11 d. In this case, the inert gas bounces off the inner surface of the second side wall 11 b, the third side wall 11 c, or the fourth side wall 11 d, thereby efficiently supplying the inert gas to the gap between the outer edge of the substrate W and the inner surface of the first side wall 11 a. Therefore, a small flow rate of inert gas can relatively increase the pressure in the gap between the outer edge of the substrate W and the inner surface of the first side wall 11 a, preventing the process gas from flowing into the gap. As a result, the amount of inert gas used can be reduced, thereby reducing the environmental load, and the supply of process gas to the center of each substrate W can be promoted, thereby reducing the difference in the amount of process gas supplied between the peripheral and central portions of each substrate W. As a result, the in-plane uniformity of the process is improved.

[0030] The first inert gas supply pipe 31a injects the inert gas so that the inert gas is supplied into the inner pipe 11 along the inner surface of the third side wall 11c. The second inert gas supply pipe 33a injects the inert gas so that the inert gas is supplied into the inner pipe 11 along the inner surface of the fourth side wall 11d. The processing gas supply pipe 32a is configured to inject the processing gas toward the inner surface of the second side wall 11b. The processing gas supply pipe 32a may be configured to inject the processing gas directly toward the center O of the substrate W, for example, without injecting the processing gas toward the second side wall 11b.

[0031] A plurality of gas holes 31f (first gas holes) are provided in the first inert gas supply pipe 31a at a portion located within the inner pipe 11. A plurality of gas holes 32f are provided in the process gas supply pipe 32a at a portion located within the inner pipe 11. A plurality of gas holes 33f (second gas holes) are provided in the second inert gas supply pipe 33a at a portion located within the inner pipe 11. The gas holes (gas holes 31f, 32f, 33f) are provided at predetermined intervals along the extension direction of the respective gas supply pipes. Each gas hole sprays gas in the horizontal direction. The intervals between the gas holes are set to be the same as the intervals between the substrates W held in the boat 16, for example. The height positions of the gas holes are set to be the same as the height positions of the substrates W, for example.

[0032] 3 , a half line extending from the center of the first inert gas supply pipe 31a toward the outside in the radial direction of the substrate W is defined as half line L1. A half line extending from the center of the first inert gas supply pipe 31a toward the boundary between the second side wall 11b and the third side wall 11c is defined as half line L2. A half line extending from the center of the first inert gas supply pipe 31a toward the boundary between the first side wall 11a and the third side wall 11c is defined as half line L3.

[0033] 4, each gas hole 31f may be located on the second side wall 11b (opposite the substrate W) between the semi-linear lines L1 and L2 in the pipe wall (first pipe wall) of the first inert gas supply pipe 31a. That is, each gas hole 31f may be located in the region of the pipe wall (first pipe wall) of the first inert gas supply pipe 31a between the semi-linear lines L1 and L2. This allows the first inert gas supply pipe 31a to inject inert gas toward the region of the second side wall 11b between the semi-linear lines L1 and L2 (solid arrows in FIG. 4). In this case, the inert gas injected from each gas hole 31f bounces off the inner surface of the second side wall 11b, thereby forming a gas flow F11 that flows along the inner surfaces of the third side wall 11c and the first side wall 11a.

[0034] The gas flow F11 flows along the third side wall 11c, which has a flow straightening effect toward the peripheral edge of the substrate W, and therefore, the inert gas can be efficiently introduced toward the peripheral edge of the substrate W. As a result, the concentration of the processing gas can be selectively diluted while optimizing the amount of inert gas used.

[0035] Furthermore, when the gas holes 31f are arranged in the pipe wall (first pipe wall) in the region between the half lines L1 and L2, a gas flow F12 toward the process gas supply pipe 32a can be formed in addition to the gas flow F11. The gas flow F12 can dilute the process gas in the process gas injection region, thereby diluting the process gas concentration across the surface of the substrate W. This allows for gradual adjustment of the film thickness distribution across the surface.

[0036] Here, if the gas injection direction from each gas hole 31f is set closer to the half-line L2 than the half-line L1, the flow of gas flow F11 can be formed more actively, thereby efficiently and selectively diluting the concentration of the processing gas at the peripheral portion of the substrate W.

[0037] Furthermore, if the gas injection direction from each gas hole 31f is set closer to the half-line L1 than the half-line L2, the flow of the gas flow F12 can be formed more actively, thereby enhancing the overall dilution effect of the processing gas concentration.

[0038] In addition, when each gas hole 31f injects the inert gas into the region between the half lines L1 and L2, the injected inert gas can also be diffused in the vertical direction, as shown in Fig. 7. By forming an inert gas diffusion region in the vertical direction (interface direction) on both sides where the processing gas is injected in this way, interface uniformity can also be improved.

[0039] 4 also shows a case where each gas hole 31f is located at an intersection with the semi-line L1 in the pipe wall of the first inert gas supply pipe 31a (as indicated by the dashed arrow in FIG. 4). In this case, as shown in FIG. 7, the inert gas injected from each gas hole 31f bounces off the inner surface of the second side wall 11b, improving its diffusibility in the vertical direction. This improves the inter-surface uniformity of the processing.

[0040] As shown in FIG. 5 , each gas hole 31f may be located on the third sidewall 11c between the semi-linear lines L2 and L3 in the pipe wall of the first inert gas supply pipe 31a. In this case, the inert gas injected from each gas hole 31f bounces off the inner surface of the third sidewall 11c, forming a gas flow F13 that flows along the inner surfaces of the third sidewall 11c and the first sidewall 11a. Meanwhile, almost no gas flow is formed toward the process gas supply pipe 32a. The gas flow F13 selectively dilutes the concentration of the process gas at the peripheral portion of the substrate W. This allows for sharp adjustment of the in-plane distribution of the process. This is particularly effective when it is desired to prevent the film thickness at the peripheral portion of the substrate W from becoming thick. Furthermore, as shown in FIG. 7 , the inert gas injected from each gas hole 31f bounces off the inner surface of the third sidewall 11c, improving vertical diffusion. This improves inter-surface process uniformity.

[0041] 6, each gas hole 31f may be located at an intersection of the wall of the first inert gas supply pipe 31a with the semi-linear line L2, which provides an intermediate effect between the case shown in FIG.

[0042] 3 , a half line extending from the center of the second inert gas supply pipe 33a toward the outside in the radial direction of the substrate W is designated as half line L4. A half line extending from the center of the second inert gas supply pipe 33a toward the boundary between the second side wall 11b and the fourth side wall 11d is designated as half line L5. A half line extending from the center of the second inert gas supply pipe 33a toward the boundary between the first side wall 11a and the fourth side wall 11d is designated as half line L6.

[0043] As shown in FIG. 4 , each gas hole 33 f may be located on the second side wall 11 b (opposite the substrate W) between the semi-linear lines L4 and L5 in the pipe wall (second pipe wall) of the second inert gas supply pipe 33 a. That is, each gas hole 33 f may be located in the region of the pipe wall (second pipe wall) of the second inert gas supply pipe 33 a between the semi-linear lines L4 and L5. This allows the second inert gas supply pipe 33 a to inject inert gas toward the region of the second side wall 11 b between the semi-linear lines L4 and L5 (solid arrows in FIG. 4 ). In this case, the inert gas injected from each gas hole 33 f bounces off the inner surface of the second side wall 11 b, thereby forming a gas flow F21 that flows along the inner surfaces of the fourth side wall 11 d and the first side wall 11 a.

[0044] The gas flow F21 flows along the fourth side wall 11 d, which has a flow straightening effect toward the peripheral edge of the substrate W, and therefore, the inert gas can be efficiently introduced toward the peripheral edge of the substrate W. As a result, the concentration of the processing gas can be selectively diluted while optimizing the amount of inert gas used.

[0045] Furthermore, when the gas holes 33f are arranged in the pipe wall (second pipe wall) in the region between the semi-linear lines L4 and L5, a gas flow F22 directed toward the process gas supply pipe 32a can be formed in addition to the gas flow F21. The gas flow F22 can dilute the process gas in the process gas injection region, thereby diluting the process gas concentration across the surface of the substrate W. This allows for gradual adjustment of the film thickness distribution across the surface.

[0046] Here, if the gas injection direction from each gas hole 33f is set closer to half-line L5 than half-line L4, the flow of gas flow F21 can be formed more actively, thereby efficiently and selectively diluting the concentration of the processing gas at the peripheral portion of the substrate W.

[0047] Furthermore, if the gas injection direction from each gas hole 33f is set closer to the half-line L4 than the half-line L5, the flow of the gas flow F22 can be formed more actively, thereby enhancing the overall dilution effect of the processing gas concentration.

[0048] In addition, when each gas hole 33f injects the inert gas into the region between the half lines L1 and L2, the injected inert gas can also be diffused in the vertical direction, as shown in Fig. 7. By forming an inert gas diffusion region in the vertical direction (interface direction) on both sides where the processing gas is injected in this way, interface uniformity can also be improved.

[0049] 4 also shows a case where each gas hole 33f is located at an intersection with the semi-line L4 in the pipe wall of the second inert gas supply pipe 33a (as indicated by the dashed arrow in FIG. 4). In this case, as shown in FIG. 7, the inert gas injected from each gas hole 33f bounces off the inner surface of the second side wall 11b, improving its diffusibility in the vertical direction. This improves the inter-surface uniformity of the processing.

[0050] As shown in FIG. 5 , each gas hole 33 f may be located on the fourth side wall 11 d between the semi-linear lines L5 and L6 in the pipe wall of the second inert gas supply pipe 33 a. In this case, the inert gas injected from each gas hole 33 f bounces off the inner surface of the fourth side wall 11 d, forming a gas flow F23 that flows along the inner surface of the fourth side wall 11 d and the inner surface of the first side wall 11 a. Meanwhile, almost no gas flow is formed toward the process gas supply pipe 32 a. The gas flow F23 selectively dilutes the concentration of the process gas at the peripheral edge of the substrate W. This allows for sharp adjustment of the in-plane distribution of the process. This is particularly effective when it is desired to prevent the film thickness at the peripheral edge of the substrate W from becoming thick. As shown in FIG. 7 , the inert gas injected from each gas hole 33 f bounces off the inner surface of the fourth side wall 11 d, improving vertical diffusion. This improves inter-surface process uniformity.

[0051] 6, each gas hole 33f may be located at an intersection of the wall of the second inert gas supply pipe 33a with the semi-linear line L5, which provides an intermediate effect between the case shown in FIG.

[0052] In Figures 4 to 6, when processing gas is injected from each gas hole 32f toward the inner surface of the second side wall 11b, the diffusion range of the gas immediately after being injected from each gas hole 31f, 32f, 33f is shown as areas A11, A12, A13, respectively.

[0053] The gas supply unit 30 may mix multiple types of gases and inject the mixed gas from a single supply pipe. The gas supply pipes (the first inert gas supply pipe 31 a, the processing gas supply pipe 32 a, and the second inert gas supply pipe 33 a) may have different shapes and arrangements. For example, one or both of the first inert gas supply pipe 31 a and the second inert gas supply pipe 33 a may be folded gas supply pipes that are bent in an L-shape at the bottom and folded back in a U-shape at the top to extend downward. For example, the processing gas supply pipe 32 a may be a folded gas supply pipe.

[0054] The gas supply unit 30 may further include another gas supply pipe in addition to the first inert gas supply pipe 31a, the processing gas supply pipe 32a, and the second inert gas supply pipe 33a. For example, multiple processing gas supply pipes may be provided between the first inert gas supply pipe 31a and the second inert gas supply pipe 33a. The multiple processing gas supply pipes may be gas supply pipes that supply the same processing gas or gas supply pipes that supply different processing gases. For example, one or more additional inert gas supply pipes may be provided between the first inert gas supply pipe 31a and the processing gas supply pipe 32a. For example, one or more additional inert gas supply pipes may be provided between the processing gas supply pipe 32a and the second inert gas supply pipe 33a.

[0055] 2 , the exhaust unit 40 exhausts gas that is discharged from the inner tube 11 through the exhaust slit 15 and reaches the exhaust port 41 via the space P1 between the inner tube 11 and the outer tube 12. The exhaust port 41 is formed on the side wall of the upper part of the manifold 17, above the support part 20. An exhaust passage 42 is connected to the exhaust port 41. A pressure adjustment valve 43 and a vacuum pump 44 are sequentially disposed in the exhaust passage 42, so that the inside of the processing vessel 10 can be exhausted.

[0056] The heating unit 50 is provided around the outer tube 12. The heating unit 50 is provided, for example, on the base plate 28. The heating unit 50 has a cylindrical shape so as to cover the outer tube 12. The heating unit 50 includes, for example, a heater, and heats each substrate W in the processing vessel 10.

[0057] The control unit 90 controls the operation of each part of the substrate processing apparatus 1 to process multiple substrates W accommodated in the processing vessel 10 at once. The control unit 90 may be, for example, a computer. Computer programs for controlling the operation of each part of the substrate processing apparatus 1 are stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0058] Next, a description will be given of a substrate processing method performed using the substrate processing apparatus 1 according to the embodiment. The substrate processing method according to the embodiment is performed by a control unit 90 controlling the operations of each unit of the substrate processing apparatus 1.

[0059] First, the boat 16 holding a plurality of substrates W is lifted from below into the processing vessel 10, which has been adjusted to a predetermined temperature, and the opening at the bottom of the processing vessel 10 is closed with the lid 21 to seal the interior of the processing vessel 10. Next, the exhaust unit 40 evacuates the interior of the processing vessel 10 to maintain the process pressure, and the heating unit 50 raises the substrate temperature to maintain the process temperature, and the rotation of the rotation shaft 24 rotates the boat 16.

[0060] Next, the control unit 90 injects the process gas from the process gas supply pipe 32a into the process vessel 10 while injecting the inert gas from the first inert gas supply pipe 31a and the second inert gas supply pipe 33a toward the inner surface of the second side wall 11b, the third side wall 11c, or the fourth side wall 11d. This allows each substrate W to be processed at once. At this time, the inert gas flows along the third side wall 11c or the fourth side wall 11d, thereby efficiently supplying the inert gas to the gap between the outer edge of the substrate W and the inner surface of the first side wall 11a. Therefore, a small flow rate of the inert gas can relatively increase the pressure in the gap between the outer edge of the substrate W and the inner surface of the first side wall 11a, thereby preventing the process gas from flowing into the gap. As a result, the amount of inert gas used can be reduced, thereby reducing the environmental load, while promoting the supply of the process gas near the center of each substrate W and reducing the difference in the amount of process gas supplied between the peripheral and central portions of each substrate W.

[0061] The flow rate of the inert gas injected from the first inert gas supply pipe 31 a may be lower than the flow rate of the process gas injected from the process gas supply pipe 32 a, for example. The flow rate of the inert gas injected from the second inert gas supply pipe 33 a may be lower than the flow rate of the process gas injected from the process gas supply pipe 32 a, for example. That is, according to the substrate processing apparatus 1 of this embodiment, the inert gas flow rectifying effect of the third side wall 11 c or the fourth side wall 11 d allows the flow rates of the inert gas from the first inert gas supply pipe 31 a and the second inert gas supply pipe 33 a to be set lower than the process gas flow rate.

[0062] Next, the pressure inside the processing vessel 10 is increased to atmospheric pressure, and the temperature inside the processing vessel 10 is decreased to the unloading temperature, and then the boat 16 holding the processed substrates W is unloaded from the processing vessel 10.

[0063] Second Embodiment A substrate processing apparatus 1X according to a second embodiment will be described with reference to Figures 8 to 12. The substrate processing apparatus 1X differs from the substrate processing apparatus 1 in that it does not have a nozzle accommodating portion 13. The rest of the configuration may be the same as that of the substrate processing apparatus 1. The following description will focus on the differences from the substrate processing apparatus 1.

[0064] 8, the substrate processing apparatus 1X includes a processing vessel 10X having an inner tube 11X and an outer tube 12, instead of the processing vessel 10. The inner tube 11X has a fifth side wall 11e.

[0065] The fifth side wall 11e extends along the circumferential direction of the substrate W. The fifth side wall 11e has a cylindrical shape. A rectangular exhaust slit 15 is formed along the longitudinal direction (up-down direction) of the fifth side wall 11e at a portion of the circumferential direction. The radius R1X of the fifth side wall 11e is larger than the radius R1 of the arc of the first side wall 11a of the substrate processing apparatus 1. This allows each gas supply pipe (the first inert gas supply pipe 31a, the processing gas supply pipe 32a, and the second inert gas supply pipe 33a) to be disposed between the outer end of the substrate W and the inner surface of the fifth side wall 11e.

[0066] The first inert gas supply pipe 31a and the second inert gas supply pipe 33a are each configured to inject inert gas toward the inner surface of the fifth side wall 11e. In this case, the inert gas bounces off the inner surface of the fifth side wall 11e, thereby efficiently supplying the inert gas to the gap between the outer edge of the substrate W and the inner surface of the fifth side wall 11e. Therefore, a small flow rate of inert gas can relatively increase the pressure in the gap between the outer edge of the substrate W and the inner surface of the fifth side wall 11e, thereby preventing the process gas from flowing into the gap. As a result, the amount of inert gas used can be reduced, thereby reducing the environmental load, and the supply of process gas to the vicinity of the center of each substrate W can be promoted, thereby reducing the difference in the amount of process gas supplied between the peripheral and central portions of each substrate W.

[0067] The inert gas injected from each gas hole 31 f and each gas hole 33 f bounces off the inner surface of the fifth side wall 11 e, forming a gas flow along the inner surface of the fifth side wall 11 e away from the process gas supply pipe 32 a and a gas flow toward the process gas supply pipe 32 a. The gas flow along the inner surface of the fifth side wall 11 e away from the process gas supply pipe 32 a selectively dilutes the concentration of the process gas at the peripheral edge of the substrate W. The gas flow toward the process gas supply pipe 32 a dilutes the concentration of the process gas overall within the surface of the substrate W.

[0068] 9, a half line extending from the center of the first inert gas supply pipe 31a toward the outside in the radial direction of the substrate W is designated as half line L7. A half line extending from the center of the first inert gas supply pipe 31a toward the center of the processing gas supply pipe 32a is designated as half line L8. A half line extending from the center of the first inert gas supply pipe 31a perpendicular to half line L7 and extending toward the opposite side of the processing gas supply pipe 32a is designated as half line L9.

[0069] 10 , each gas hole 31f may be located on the side of the fifth sidewall 11e (opposite the substrate W) between the semi-linear lines L7 and L8 in the pipe wall of the first inert gas supply pipe 31a. That is, each gas hole 31f may be located in the region of the pipe wall (first pipe wall) of the first inert gas supply pipe 31a between the semi-linear lines L7 and L8. In this case, the gas flow toward the process gas supply pipe 32a is larger than the gas flow along the inner surface of the fifth sidewall 11e away from the process gas supply pipe 32a. This allows for gentle adjustment of the in-plane distribution of the process.

[0070] 11 , each gas hole 31f may be located on the side of the fifth sidewall 11e (opposite the substrate W) between the semi-linear lines L7 and L9 in the pipe wall of the first inert gas supply pipe 31a. That is, each gas hole 31f may be located in the region of the pipe wall (first pipe wall) of the first inert gas supply pipe 31a between the semi-linear lines L7 and L9. In this case, the gas flow away from the process gas supply pipe 32a along the inner surface of the fifth sidewall 11e is larger than the gas flow toward the process gas supply pipe 32a. This allows for sharp adjustment of the in-plane distribution of the process. This is particularly effective when it is desired to prevent the film thickness at the peripheral edge of the substrate W from becoming thick.

[0071] 12, each gas hole 31f may be located at an intersection of the wall of the first inert gas supply pipe 31a with the semi-linear line L7. In this case, the gas flow along the inner surface of the fifth side wall 11e away from the process gas supply pipe 32a and the gas flow toward the process gas supply pipe 32a are approximately the same. Therefore, an intermediate effect between the case shown in FIG. 10 and the case shown in FIG. 11 can be obtained.

[0072] 9, a half line extending from the center of the second inert gas supply pipe 33a toward the outside in the radial direction of the substrate W is designated as half line L10. A half line extending from the center of the second inert gas supply pipe 33a toward the center of the processing gas supply pipe 32a is designated as half line L11. A half line extending from the center of the second inert gas supply pipe 33a perpendicular to half line L10 and extending toward the opposite side of the processing gas supply pipe 32a is designated as half line L12.

[0073] 10 , each gas hole 33f may be located on the side of the fifth sidewall 11e (opposite the substrate W) between the semi-linear lines L10 and L11 in the pipe wall of the second inert gas supply pipe 33a. That is, each gas hole 33f may be located in the region of the pipe wall (second pipe wall) of the second inert gas supply pipe 33a between the semi-linear lines L10 and L11. In this case, the gas flow toward the process gas supply pipe 32a is larger than the gas flow along the inner surface of the fifth sidewall 11e away from the process gas supply pipe 32a. This allows for gentle adjustment of the in-plane distribution of the process.

[0074] 11 , each gas hole 33f may be located on the side of the fifth sidewall 11e (opposite the substrate W) between the semi-linear lines L10 and L12 in the pipe wall of the second inert gas supply pipe 33a. That is, each gas hole 33f may be located in the region of the pipe wall (second pipe wall) of the second inert gas supply pipe 33a between the semi-linear lines L10 and L12. In this case, the gas flow away from the process gas supply pipe 32a along the inner surface of the fifth sidewall 11e is larger than the gas flow toward the process gas supply pipe 32a. This allows for sharp adjustment of the in-plane distribution of the process. This is particularly effective when it is desired to prevent the film thickness at the peripheral edge of the substrate W from becoming thick.

[0075] 12, each gas hole 33f may be located at an intersection of the wall of the second inert gas supply pipe 33a with the semi-linear line L10. In this case, the gas flow along the inner surface of the fifth side wall 11e away from the process gas supply pipe 32a and the gas flow toward the process gas supply pipe 32a are approximately the same. Therefore, an intermediate effect between the case shown in FIG. 10 and the case shown in FIG. 11 can be obtained.

[0076] 10 to 12 show an example in which the process gas is injected from each gas hole 32 f toward the inner surface of the fifth side wall 11 e. However, the present invention is not limited to this, and the process gas supply pipe 32 a may be configured to inject the process gas directly toward the center O of the substrate W, for example, without injecting the process gas toward the fifth side wall 11 e.

[0077] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0078] This international application claims priority based on Japanese Patent Application No. 2022-120776, filed on July 28, 2022, the entire contents of which are incorporated herein by reference.

[0079] 1, 1X Substrate processing apparatus 10, 10X Processing container 11, 11X Inner pipe 31a First inert gas supply pipe 32a Processing gas supply pipe 33a Second inert gas supply pipe W Substrate

Claims

1. a processing vessel for accommodating a plurality of substrates arranged in multiple stages; a processing gas supply pipe extending along an arrangement direction of the plurality of substrates and supplying a processing gas into the processing chamber; a pair of inert gas supply pipes that are provided at positions sandwiching the processing gas supply pipe along a circumferential direction of the substrate and extend along the arrangement direction, and supply an inert gas into the processing chamber; Equipped with The pair of inert gas supply pipes are configured to inject the inert gas toward an inner surface of a sidewall of the processing vessel, the inner surface forming a flow of the inert gas in a circumferential direction of the substrate.

2. The process gas supply pipe is configured to inject the process gas toward the inner surface of the side wall. The substrate processing apparatus according to claim 1 .

3. The side wall is A first side wall extending along the circumferential direction; a second side wall located radially outward of the substrate from the first side wall and extending along the circumferential direction at a position different from the first side wall in the circumferential direction; a third side wall connected to one end of the first side wall and one end of the second side wall; a fourth side wall connected to the other end of the first side wall and the other end of the second side wall; having the processing gas supply pipe and the pair of inert gas supply pipes are provided in a region surrounded by the second side wall, the third side wall, and the fourth side wall. The substrate processing apparatus according to claim 1 .

4. an angle between the second side wall and the third side wall and an angle between the second side wall and the fourth side wall are obtuse angles; The substrate processing apparatus according to claim 3 .

5. The pair of inert gas supply pipes are a first inert gas supply pipe located closer to the third side wall than the process gas supply pipe and having a first pipe wall with a plurality of first gas holes formed along the arrangement direction; a second inert gas supply pipe located closer to the fourth side wall than the process gas supply pipe and having a second pipe wall with a plurality of second gas holes formed along the arrangement direction; having the first inert gas supply pipe is configured to inject the inert gas from the plurality of first gas holes toward the second side wall or the third side wall; The second inert gas supply pipe is configured to inject the inert gas from the plurality of second gas holes toward the second side wall or the fourth side wall. The substrate processing apparatus according to claim 3 .

6. In a cross section perpendicular to the arrangement direction, a half line extending from the center of the first inert gas supply pipe toward the outside in the radial direction is defined as a first half line, and a half line extending from the center of the first inert gas supply pipe toward the boundary between the second side wall and the third side wall is defined as a second half line. the plurality of first gas holes are located in a region of the first tube wall that is sandwiched between the first half-ray and the second half-ray; The substrate processing apparatus according to claim 5 .

7. In a cross section perpendicular to the arrangement direction, a half line extending from the center of the first inert gas supply pipe toward the outside in the radial direction is defined as a first half line, The plurality of first gas holes are located at intersections of the first pipe wall with the first half line. The substrate processing apparatus according to claim 5 .

8. In a cross section perpendicular to the arrangement direction, a half line extending from the center of the first inert gas supply pipe toward the boundary between the second side wall and the third side wall is defined as a second half line. The plurality of first gas holes are located at intersections of the first pipe wall with the second half line. The substrate processing apparatus according to claim 5 .

9. In a cross section perpendicular to the arrangement direction, a half line extending from the center of the first inert gas supply pipe toward the boundary between the second side wall and the third side wall is defined as a second half line, and a half line extending from the center of the first inert gas supply pipe toward the boundary between the first side wall and the third side wall is defined as a third half line. the first gas holes are located in a region of the first tube wall that is sandwiched between the second half line and the third half line; The substrate processing apparatus according to claim 5 .

10. In a cross section perpendicular to the arrangement direction, a semi-line extending from the center of the second inert gas supply pipe toward the outside in the radial direction is defined as a fourth semi-line, and a semi-line extending from the center of the second inert gas supply pipe toward the boundary between the second side wall and the fourth side wall is defined as a fifth semi-line. the second gas holes are located in a region of the second tube wall that is sandwiched between the fourth half-ray and the fifth half-ray; The substrate processing apparatus according to claim 5 .

11. In a cross section perpendicular to the arrangement direction, when a semi-straight line extending from the center of the second inert gas supply pipe toward the outside in the radial direction is defined as a fourth semi-straight line, The plurality of second gas holes are located at intersections of the second pipe wall with the fourth half line. The substrate processing apparatus according to claim 5 .

12. In a cross section perpendicular to the arrangement direction, a half line extending from the center of the second inert gas supply pipe toward the boundary between the second side wall and the fourth side wall is defined as a fifth half line. The plurality of second gas holes are located at intersections of the second pipe wall with the fifth half line. The substrate processing apparatus according to claim 5 .

13. In a cross section perpendicular to the arrangement direction, a half line extending from the center of the second inert gas supply pipe toward the boundary between the second side wall and the fourth side wall is defined as a fifth half line, and a half line extending from the center of the second inert gas supply pipe toward the boundary between the first side wall and the fourth side wall is defined as a sixth half line. the second gas holes are located in a region of the second tube wall that is sandwiched between the fifth half-ray and the sixth half-ray; The substrate processing apparatus according to claim 5 .

14. a processing vessel for accommodating a plurality of substrates arranged in multiple stages; a processing gas supply pipe extending along an arrangement direction of the plurality of substrates and supplying a processing gas into the processing chamber; a pair of inert gas supply pipes that are provided at positions sandwiching the processing gas supply pipe along a circumferential direction of the substrate and extend along the arrangement direction, and supply an inert gas into the processing chamber; A substrate processing method for processing the plurality of substrates accommodated in the processing vessel in a substrate processing apparatus comprising: a pair of inert gas supply pipes for injecting the inert gas toward an inner surface of a sidewall of the processing vessel while injecting the processing gas from the processing gas supply pipe into the processing vessel, the inner surface forming a flow of the inert gas in a circumferential direction of the substrate.

15. a flow rate of the inert gas injected from each of the pair of inert gas supply pipes is less than a flow rate of the processing gas injected from the processing gas supply pipe; The method of claim 14.