Semiconductor device and method for manufacturing semiconductor device

Abstract

This semiconductor device comprises a semiconductor element, a conductive member, a conductive joining layer, and a first positioning member. The semiconductor element has a first primary surface electrode. The conductive joining layer conductively joins the first primary surface electrode and the conductive member. The first positioning member is disposed between the first primary surface electrode and the conductive member and is in contact with the first primary surface electrode and the conductive member. In one example, the first positioning member is in contact with the conductive joining layer. In one example, the first positioning member contains a metal as a main component.

Description

Semiconductor device and method for manufacturing the same

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.

[0002] Conventionally, semiconductor devices equipped with semiconductor elements having a switching function have been widely known. Such semiconductor devices are mainly used for power conversion. Patent Document 1 discloses an example of such a semiconductor device.

[0003] JP 2013-258387 A

[0004] When a conductive member is electrically connected to a main surface electrode of a semiconductor element via a conductive bonding layer, the conductive member may move closer to, move away from, or tilt relative to the main surface electrode, which may result in an uneven thickness of the conductive bonding layer.

[0005] An object of the present disclosure is to provide an improved semiconductor device and a method for manufacturing such a semiconductor device. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device and a method for manufacturing such a semiconductor device that can make the thickness of the conductive bonding layer more uniform.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a semiconductor element having a first principal surface electrode, a conductive member, and a conductive bonding layer that electrically connects the first principal surface electrode and the conductive member, and further comprising a first positioning member that is disposed between the first principal surface electrode and the conductive member and that contacts the first principal surface electrode and the conductive member.

[0007] According to the above configuration, the thickness of the conductive bonding layer can be made more uniform in the semiconductor device.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 3 is a partial plan view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 4 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 5 is a left side view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 2. FIG. 10 is a partial enlarged plan view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 11 is a partial enlarged cross-sectional view taken along line XI-XI in FIG. 10. FIG. 12 is a partial enlarged cross-sectional view taken along line XII-XII in FIG. 10. FIG. 13 is a partial enlarged cross-sectional view taken along line XIII-XIII in FIG. 10. FIG. 14 is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 15 is a partially enlarged cross-sectional view taken along line XV-XV in FIG. 14. FIG. 16 is a partially enlarged cross-sectional view taken along line XVI-XVI in FIG. 14. FIG. 17 is a partially enlarged cross-sectional view taken along line XVII-XVII in FIG. 14. FIG. 18 is a partially enlarged cross-sectional view showing a method for manufacturing the semiconductor device according to the first embodiment of the present disclosure. FIG. 19 is a partially enlarged cross-sectional view showing a method for manufacturing the semiconductor device according to the first embodiment of the present disclosure. FIG. 20 is a partially enlarged cross-sectional view showing a method for manufacturing the semiconductor device according to the first embodiment of the present disclosure. FIG. 21 is a partially enlarged cross-sectional view showing a method for manufacturing the semiconductor device according to the first embodiment of the present disclosure. FIG. 22 is a partially enlarged cross-sectional view showing a method for manufacturing the semiconductor device according to the first embodiment of the present disclosure. FIG. 23 is a partially enlarged plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 24 is a partially enlarged plan view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 25 is a partially enlarged cross-sectional view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. Fig. 26 is a partially enlarged cross-sectional view showing a fourth modified example of the semiconductor device according to the first embodiment of the present disclosure, Fig. 27 is a partially enlarged cross-sectional view showing a semiconductor device according to the second embodiment of the present disclosure, and Fig. 28 is a partially enlarged plan view showing a semiconductor device according to the third embodiment of the present disclosure.

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 17, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes two insulating members 11, two conductive members 12, two heat dissipation members 13, a plurality of fourth conductive members 14, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, a sealing resin 50, a plurality of first positioning members 71, 73, a plurality of second positioning members 72, 74, a plurality of conductive bonding layers 291, and a plurality of conductive bonding layers 292.

[0014] The semiconductor device A10 further includes a first wiring 15, a second wiring 16, a first gate terminal 171, a second gate terminal 172, a first detection terminal 181, a second detection terminal 182, a plurality of first wires 41, a plurality of second wires 42, a plurality of third wires 43, a plurality of fourth wires 44, and a plurality of fifth wires 45. For ease of understanding, Fig. 1 omits the illustration of the sealing resin 50. For ease of understanding, Fig. 2 shows the sealing resin 50 with an imaginary line (two-dot chain line). For ease of understanding, Fig. 3 shows the second conductive member 32 with an imaginary line.

[0015] In describing the semiconductor device A10, for convenience, the thickness direction of the first semiconductor element 21 and the second semiconductor element 22 will be referred to as the "thickness direction z." One direction perpendicular to the thickness direction z will be referred to as the "first direction x." A direction perpendicular to both the thickness direction z and the first direction x will be referred to as the "second direction y."

[0016] The semiconductor device A10 converts a DC power supply voltage applied to the first conductive member 31 and the second conductive member 32 into AC power using the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. The converted AC power is input to a power supply target such as a motor through the third conductive member 33. The semiconductor device A10 constitutes part of a power conversion circuit such as an inverter.

[0017] 2 and 3, the two insulating members 11 are spaced apart from each other in the first direction x. The two insulating members 11 are made of a resin material containing epoxy resin. Alternatively, the two insulating members 11 may be made of a ceramic material containing aluminum nitride (AlN).

[0018] 6 and 7 , the two conductive members 12 are located on one side of the two insulating members 11 in the thickness direction z. The two conductive members 12 are individually bonded to the two insulating members 11. In describing the semiconductor device A10, of the two conductive members 12, the conductive member 12 on which a plurality of first semiconductor elements 21 are mounted is referred to as the "first member 12A." Of the two conductive members 12, the conductive member 12 on which a plurality of second semiconductor elements 22 are mounted is referred to as the "second member 12B."

[0019] Each of the two conductive members 12 has a main surface 121, a back surface 122, and a first end surface 123. The main surface 121 and the back surface 122 face opposite each other in the thickness direction z. The main surface 121 includes a first main surface 121A belonging to the first member 12A and a second main surface 121B belonging to the second member 12B. The first main surface 121A faces the multiple first semiconductor elements 21. The second main surface 121B faces the multiple second semiconductor elements 22. The back surface 122 is bonded to one of the two insulating members 11.

[0020] In the semiconductor device A10, as shown in FIGS. 6 to 9 , each of the two conductive members 12 includes a first layer 120A, a second layer 120B, and a bonding layer 120C. The first layer 120A has a back surface 122. The second layer 120B has a main surface 121. The first layer 120A and the second layer 120B include copper (Cu). The dimension of the second layer 120B in the thickness direction z is larger than the dimension of the first layer 120A in the thickness direction. The bonding layer 120C has a first end surface 123. The bonding layer 120C conductively bonds the first layer 120A and the second layer 120B. The bonding layer 120C includes a metal element. The metal element is, for example, tin (Sn).

[0021] As shown in FIGS. 6 and 7 , the two heat dissipation members 13 are located on the opposite side of the two insulating members 11 from the two conductive members 12 in the thickness direction. The two heat dissipation members 13 are individually bonded to the two insulating members 11. The two heat dissipation members 13 contain copper. Each of the two heat dissipation members 13 has an end face 131 facing in a direction perpendicular to the thickness direction z. When viewed in the thickness direction z, the end face 131 is surrounded by the periphery of the insulating member 11. As shown in FIG. 4 , a portion of each of the two heat dissipation members 13 is exposed to the outside from the sealing resin 50. When the semiconductor device A10 is in use, a heat sink (not shown) is bonded to the two heat dissipation members 13.

[0022] The specific configurations of the two insulating members 11, the first layers 120A of the two conductive members 12, and the two heat dissipation members 13 are not limited in any way, and may be formed, for example, from a DBC (Direct Bonded Copper) substrate.

[0023] As shown in FIGS. 6 to 8 , the multiple first semiconductor elements 21 are bonded to the first main surface 121A of the first member 12A. In this embodiment, all of the multiple first semiconductor elements 21 are identical elements. The multiple first semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Alternatively, the multiple first semiconductor elements 21 may be field-effect transistors including MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors) or bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors). In the description of the semiconductor device A10, the multiple first semiconductor elements 21 are n-channel MOSFETs with a vertical structure. The multiple first semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). The multiple first semiconductor elements 21 are arranged along the second direction y.

[0024] The first semiconductor element 21 has a first back surface electrode 211 , a first principal surface electrode 212 , and a second principal surface electrode 213 .

[0025] The first back surface electrode 211 faces the first main surface 121A of the first member 12A. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the first back surface electrode 211. The first back surface electrode 211 is, for example, a drain electrode. The first back surface electrode 211 is conductively bonded to the first main surface 121A via a conductive bonding layer 291. Therefore, the first back surface electrodes 211 of the multiple first semiconductor elements 21 are electrically connected to the first member 12A. The conductive bonding layer 291 is, for example, solder. Alternatively, the conductive bonding layer 291 may be a sintered metal containing silver or the like.

[0026] The first principal surface electrode 212 is located on the opposite side in the thickness direction z to the first back surface electrode 211. A current corresponding to the power converted by the first semiconductor element 21 flows through the first principal surface electrode 212. The first principal surface electrode 212 corresponds to, for example, a source electrode of the first semiconductor element 21.

[0027] The second principal surface electrode 213 is located on the same side as the first principal surface electrode 212 in the thickness direction z. A control voltage for driving the first semiconductor element 21 is applied to the second principal surface electrode 213. The second principal surface electrode 213 is, for example, a gate electrode. As shown in FIG. 3 , the area of ​​the second principal surface electrode 213 is smaller than the area of ​​the first principal surface electrode 212 when viewed in the thickness direction z.

[0028] As shown in Figures 6, 7, and 9, the multiple second semiconductor elements 22 are bonded to the second main surface 121B of the second member 12B. The multiple second semiconductor elements 22 are the same elements as the multiple first semiconductor elements 21. Therefore, the multiple second semiconductor elements 22 are n-channel MOSFETs with a vertical structure. The multiple second semiconductor elements 22 are arranged along the second direction y.

[0029] The second semiconductor element 22 has a second back surface electrode 221 , a third principal surface electrode 222 and a fourth principal surface electrode 223 .

[0030] The second back surface electrode 221 faces the second main surface 121B of the second member 12B. A current corresponding to the power before being converted by the second semiconductor elements 22 flows through the second back surface electrode 221. The second back surface electrode 221 is, for example, a drain electrode. The second back surface electrode 221 is conductively bonded to the second main surface 121B via a conductive bonding layer 291. Therefore, the second back surface electrodes 221 of the multiple second semiconductor elements 22 are electrically connected to the second member 12B.

[0031] The third principal surface electrode 222 is located on the opposite side in the thickness direction z to the second back surface electrode 221. A current corresponding to the power converted by the second semiconductor element 22 flows through the third principal surface electrode 222. The third principal surface electrode 222 is, for example, a source electrode of the second semiconductor element 22.

[0032] The fourth principal surface electrode 223 is located on the same side as the third principal surface electrode 222 in the thickness direction z. A control voltage for driving the second semiconductor element 22 is applied to the fourth principal surface electrode 223. The fourth principal surface electrode 223 is, for example, a gate electrode. As shown in FIG. 4 , the area of ​​the fourth principal surface electrode 223 is smaller than the area of ​​the third principal surface electrode 222 when viewed in the thickness direction z.

[0033] As shown in Fig. 3 , the first wiring 15 is located adjacent to the plurality of first semiconductor elements 21 in the first direction x. The first wiring 15 is bonded to the first main surface 121A of the first member 12A. In the semiconductor device A10, the first wiring 15 is made of a DBC substrate, similar to the pair of support members 10. As shown in Figs. 6 and 7 , the first wiring 15 has a first insulating layer 151, a first gate wiring 152, a first detection wiring 153, and a first support layer 154.

[0034] As shown in Fig. 3, the first insulating layer 151 extends in the second direction y. As shown in Fig. 6 and 7, the first insulating layer 151 is located on the first main surface 121A of the first member 12A. The first insulating layer 151 is made of ceramics containing aluminum nitride, for example.

[0035] 3 , 6 , and 7 , the first gate wiring 152 is disposed on the first insulating layer 151. The first gate wiring 152 is located on the opposite side of the first member 12A in the thickness direction z with the first insulating layer 151 as a reference. The first gate wiring 152 extends in the second direction y. The first gate wiring 152 is electrically connected to the second main surface electrodes 213 of the multiple first semiconductor elements 21. The composition of the first gate wiring 152 includes copper.

[0036] 3 , 6 , and 7 , the first detection wiring 153 is disposed on the first insulating layer 151. The first detection wiring 153 is located on the opposite side of the first gate wiring 152 from the multiple first semiconductor elements 21 in the first direction x. Furthermore, the first detection wiring 153 is located on the same side as the first gate wiring 152 in the thickness direction z from the first insulating layer 151. The first detection wiring 153 extends in the second direction y. The first detection wiring 153 is electrically connected to the first main surface electrodes 212 of the multiple first semiconductor elements 21. The composition of the first detection wiring 153 includes copper.

[0037] 6 and 7 , the first support layer 154 is located on the opposite side of the first gate wiring 152 and the first detection wiring 153 with respect to the first insulating layer 151 in the thickness direction z, and is joined to the first main surface 121A of the first member 12A via, for example, a brazing material. The composition of the first support layer 154 includes copper.

[0038] 3 , each of the multiple first wires 41 is conductively bonded to the second main surface electrode 213 of one of the multiple first semiconductor elements 21 and the first gate wiring 152 of the first wiring 15. As a result, the second main surface electrodes 213 of the multiple first semiconductor elements 21 are electrically connected to the first gate wiring 152. The composition of the multiple first wires 41 includes aluminum (Al). Alternatively, the composition of the multiple first wires 41 may include copper (Cu) or gold (Au).

[0039] 3 , each of the multiple second wires 42 is conductively bonded to the first main surface electrode 212 of one of the multiple first semiconductor elements 21 and the first detection wiring 153 of the first wiring 15. As a result, the first main surface electrodes 212 of the multiple first semiconductor elements 21 are electrically connected to the first detection wiring 153. The composition of the multiple second wires 42 includes aluminum (Al). Alternatively, the composition of the multiple second wires 42 may include copper (Cu) or gold (Au).

[0040] As shown in FIGS. 2 and 3 , the first gate terminal 171 is located next to the first member 12A in the second direction y. The first gate terminal 171 is electrically connected to the first gate wiring 152 of the first wiring 15. The first gate terminal 171 is a metal lead made of a material containing copper or a copper alloy. As shown in FIG. 4 , a portion of the first gate terminal 171 is covered with the sealing resin 50. When viewed in the first direction x, the first gate terminal 171 is L-shaped. As shown in FIGS. 5 and 8 , the first gate terminal 171 includes a portion that stands up in the thickness direction z. This portion is exposed to the outside from the sealing resin 50. A gate voltage for driving the multiple first semiconductor elements 21 is applied to the first gate terminal 171.

[0041] As shown in FIGS. 2 and 3 , the first detection terminal 181 is located next to the first gate terminal 171 in the first direction x. The first detection terminal 181 is electrically connected to the first detection wiring 153 of the first wiring 15. The first detection terminal 181 is a metal lead made of a material containing copper or a copper alloy. As shown in FIG. 4 , a portion of the first detection terminal 181 is covered with the sealing resin 50. When viewed in the first direction x, the first detection terminal 181 is L-shaped. As shown in FIG. 5 , the first detection terminal 181 includes a portion that stands up in the thickness direction z. This portion is exposed to the outside from the sealing resin 50. A voltage that is equipotential with the voltage applied to the first main surface electrodes 212 of the multiple first semiconductor elements 21 is applied to the first detection terminal 181.

[0042] As shown in FIG. 3 , the second wiring 16 is located adjacent to the plurality of second semiconductor elements 22 in the first direction x. The second wiring 16 is bonded to the second main surface 121B of the second member 12B. In the semiconductor device A10, the second wiring 16, like the first wiring 15, is made of a DBC substrate. As shown in FIGS. 6 and 7 , the second wiring 16 has a second insulating layer 161, a second gate wiring 162, a second detection wiring 163, and a second support layer 164.

[0043] As shown in Fig. 3, the second insulating layer 161 extends in the second direction y. As shown in Fig. 6 and 7, the second insulating layer 161 is located on the second main surface 121B of the second member 12B. The second insulating layer 161 is made of ceramics containing aluminum nitride, for example.

[0044] 3, 6, and 7, the second gate wiring 162 is disposed on the second insulating layer 161. The second gate wiring 162 is located on the opposite side of the second member 12B from the first insulating layer 151 in the thickness direction z. The second gate wiring 162 extends in the second direction y. The second gate wiring 162 is electrically connected to the fourth main surface electrodes 223 of the multiple second semiconductor elements 22. The composition of the second gate wiring 162 includes copper.

[0045] 3 , 6 , and 7 , the second detection wiring 163 is disposed on the second insulating layer 161. The second detection wiring 163 is located on the opposite side of the second gate wiring 162 from the multiple second semiconductor elements 22 in the first direction x. Furthermore, the second detection wiring 163 is located on the same side as the second gate wiring 162 in the thickness direction z from the second insulating layer 161. The second detection wiring 163 extends in the second direction y. The second detection wiring 163 is electrically connected to the third main surface electrodes 222 of the multiple second semiconductor elements 22. The composition of the second detection wiring 163 includes copper.

[0046] 6 and 7 , the second support layer 164 is located on the opposite side of the second gate wiring 162 and the second detection wiring 163 with respect to the second insulating layer 161 in the thickness direction z, and is joined to the second main surface 121B of the second member 12B via, for example, a brazing material. The composition of the second support layer 164 includes copper.

[0047] 3 , each of the plurality of third wires 43 is conductively bonded to the fourth principal surface electrode 223 of one of the plurality of second semiconductor elements 22 and the second gate wiring 162 of the second wiring 16. As a result, the fourth principal surface electrode 223 of the second semiconductor element 22 is electrically connected to the second gate wiring 162. The composition of the plurality of third wires 43 includes aluminum (Al). Alternatively, the composition of the plurality of third wires 43 may include copper (Cu) or gold (Au).

[0048] 3 , each of the multiple fourth wires 44 is conductively bonded to the third principal surface electrode 222 of one of the multiple second semiconductor elements 22 and the second detection wiring 163 of the second wiring 16. As a result, the third principal surface electrodes 222 of the multiple second semiconductor elements 22 are electrically connected to the second detection wiring 163. The composition of the multiple fourth wires 44 includes aluminum (Al). Alternatively, the composition of the multiple fourth wires 44 may include copper (Cu) or gold (Au).

[0049] As shown in FIGS. 2 and 3 , the second gate terminal 172 is located adjacent to the second member 12B in the second direction y. The second gate terminal 172 is located on the same side as the first gate terminal 171 with respect to the support member 10 in the second direction y. The second gate terminal 172 is electrically connected to the second gate wiring 162 of the second wiring 16. The second gate terminal 172 is a metal lead made of a material containing copper or a copper alloy. As shown in FIG. 4 , a portion of the second gate terminal 172 is covered with the sealing resin 50. When viewed in the first direction x, the second gate terminal 172 is L-shaped. As shown in FIGS. 5 and 9 , the second gate terminal 172 includes a portion that stands up in the thickness direction z. This portion is exposed to the outside from the sealing resin 50. A gate voltage for driving the multiple second semiconductor elements 22 is applied to the second gate terminal 172.

[0050] As shown in FIGS. 2 and 3 , the second detection terminal 182 is located next to the second gate terminal 172 in the first direction x. The second detection terminal 182 is electrically connected to the second detection wiring 163 of the second wiring 16. The second detection terminal 182 is a metal lead made of a material containing copper or a copper alloy. As shown in FIG. 4 , a portion of the second detection terminal 182 is covered with the sealing resin 50. When viewed in the first direction x, the second detection terminal 182 is L-shaped. As shown in FIG. 4 , the second detection terminal 182 includes a portion that stands up in the thickness direction z. This portion is exposed to the outside from the sealing resin 50. A voltage that is equipotential with the voltage applied to the third principal surface electrodes 222 of the plurality of second semiconductor elements 22 is applied to the second detection terminal 182.

[0051] 3 , the plurality of fifth wires 45 are individually conductively joined to the first gate terminal 171 and the first detection terminal 181, and to the first gate wiring 152 and the first detection wiring 153 of the first wiring 15. As a result, the first gate terminal 171 is electrically connected to the second principal surface electrodes 213 of the plurality of first semiconductor elements 21 via the first gate wiring 152. The first detection terminal 181 is electrically connected to the first principal surface electrodes 212 of the plurality of first semiconductor elements 21 via the first detection wiring 153.

[0052] 3 , the plurality of fifth wires 45 are individually conductively bonded to the second gate terminal 172 and the second detection terminal 182, and to the second gate wiring 162 and the second detection wiring 163 of the second wiring 16. As a result, the second gate terminal 172 is electrically connected to the fourth principal surface electrodes 223 of the plurality of second semiconductor elements 22 via the second gate wiring 162. The second detection terminal 182 is electrically connected to the third principal surface electrodes 222 of the plurality of second semiconductor elements 22 via the second detection wiring 163. The composition of the plurality of fifth wires 45 includes aluminum (Al). Alternatively, the composition of the plurality of fifth wires 45 may include copper (Cu) or gold (Au).

[0053] As shown in FIGS. 2 and 3 , the semiconductor device A10 further includes four dummy terminals 19. Two of the four dummy terminals 19 are located on the opposite side of the first gate terminal 171 from the first detection terminal 181 in the first direction x. The remaining two dummy terminals 19 are located on the opposite side of the second gate terminal 172 from the second detection terminal 182 in the first direction x. The multiple dummy terminals 19 are metal leads made of a material containing copper or a copper alloy. The shape of each of the multiple dummy terminals 19 is the same as the shape of the first gate terminal 171. A portion of each of the multiple dummy terminals 19 is covered with a sealing resin. The portions of the multiple dummy terminals 19 that stand up in the thickness direction z are exposed to the outside from the sealing resin 50.

[0054] As shown in FIGS. 2 and 3 , the first conductive member 31 is located on the opposite side of the plurality of second semiconductor elements 22 from the plurality of first semiconductor elements 21 in the first direction x. As shown in FIG. 6 , the first conductive member 31 has a first terminal 311 and a first pillow member 312. The first terminal 311 is conductively joined to the first main surface 121A of the first member 12A via the first pillow member 312. Therefore, the first terminal 311 is located away from the first member 12A in the thickness direction z. As shown in FIG. 3 , the first terminal 311 overlaps the first member 12A when viewed in the thickness direction z. The composition of the first terminal 311 includes copper (Cu).

[0055] The first conductive member 31 is electrically connected to the first member 12A. Furthermore, the first conductive member 31 is electrically connected to the first back surface electrodes 211 of the plurality of first semiconductor elements 21 via the first member 12A. The first terminal portion 311 is a P terminal (positive electrode) to which a DC power supply voltage to be converted into power is applied.

[0056] 6, a portion of the first terminal 311 is exposed to the outside from the sealing resin 50. A first mounting hole 311A ​​is provided in the portion of the first terminal 311 that is exposed to the outside from the sealing resin 50. The first mounting hole 311A ​​penetrates the first terminal 311 in the thickness direction z.

[0057] As shown in FIGS. 3 , 6 to 8 , and 10 to 13 , each of the multiple fourth conductive members 14 is conductively bonded to a first principal surface electrode 212 of one of the multiple first semiconductor elements 21 and to the second principal surface 121B of the second member 12B via a conductive bonding layer 292. In this embodiment, the fourth conductive member 14 has a connection portion 141. The connection portion 141 is located at an end of the fourth conductive member 14 in the first direction x. In the illustrated example, the connection portion 141 is a portion having a locally large dimension in the thickness direction z. The connection portion 141 is conductively bonded to the first principal surface electrode 212 by the conductive bonding layer 292. As a result, the second member 12B is electrically connected to the first principal surface electrodes 212 of the multiple first semiconductor elements 21. The multiple fourth conductive members 14 extend in the first direction x. The composition of the multiple fourth conductive members 14 includes copper (Cu).

[0058] 10 to 13, the multiple first positioning members 71 are disposed between the first principal surface electrode 212 and the connection portion 141 of the fourth conductive member 14. The multiple first positioning members 71 are in contact with the first principal surface electrode 212 and the connection portion 141. When viewed in the thickness direction z, the multiple first positioning members 71 overlap the connection portion 141.

[0059] The specific configuration of the first positioning member 71 is not limited in any way. The first positioning member 71 is preferably made of a conductive material. The first positioning member 71 contains a metal as a main component, such as aluminum (Al) or copper (Cu). In this embodiment, the first positioning member 71 is made of a wire piece. In this disclosure, a wire piece is formed by partially cutting a wire material. The first positioning member 71 is made of the same components as the first wire 41 and the second wire 42. The first positioning member 71 has the same cross-sectional area as the first wire 41 and the second wire 42. The first positioning member 71 is made of a portion of a wire material having a wire diameter of 100 μm or more and 500 μm or less, for example, a portion of a wire material having a wire diameter of 125 μm or 150 μm.

[0060] There is no limitation on the number of the multiple first positioning members 71. In the illustrated example, the semiconductor device A10 includes four first positioning members 71. For ease of explanation, the four first positioning members 71 are distinguished as first positioning members 711, 712, 713, and 714.

[0061] The first positioning members 711 and 712 and the first positioning members 713 and 714 are spaced apart from each other in the first direction x. Furthermore, the first positioning members 711 and 713 and the first positioning members 712 and 714 are spaced apart from each other in the second direction y. In the illustrated example, all of the multiple first positioning members 71 have a shape that follows the first direction x.

[0062] 10 to 13 , the multiple second positioning members 72 are disposed on the first principal surface electrode 212 and are adjacent to the connection portions 141 of the fourth conductive member 14 as viewed in the thickness direction z. The size of the multiple second positioning members 72 in the thickness direction z is greater than the distance between the first principal surface electrode 212 and the connection portions 141. The difference between the size of the second positioning members 72 in the thickness direction z and the distance between the first principal surface electrode 212 and the connection portions 141 is, for example, 100 μm or more and 300 μm or less. In the illustrated example, the multiple second positioning members 72 are in contact with the conductive bonding layer 292, but the multiple second positioning members 72 do not necessarily have to be in contact with the conductive bonding layer 292.

[0063] The specific configuration of the second positioning member 72 is not limited in any way. The second positioning member 72 is preferably made of a conductive material. The second positioning member 72 contains a metal as a main component, such as aluminum (Al) or copper (Cu). In this embodiment, the second positioning member 72 is made of a wire piece. The second positioning member 72 may be made of the same components as the first wire 41 and the second wire 42. The second positioning member 72 is made of, for example, a part of a wire material having a larger wire diameter than the wire material used for the first positioning member 71.

[0064] There is no limitation on the number of the second positioning members 72. In the illustrated example, the semiconductor device A10 includes six second positioning members 72. For ease of explanation, the six second positioning members 72 are distinguished as second positioning members 721, 722, 723, 724, 725, and 726.

[0065] The second positioning members 721 and 723, and the second positioning members 722 and 724 are spaced apart from each other in the second direction y, with the connecting portion 141 sandwiched between them. The second positioning members 725 and 726 are spaced apart from each other in the first direction x, with the connecting portion 141 sandwiched between them.

[0066] 2 , 6 , and 7 , the second conductive member 32 straddles the first member 12A and the second member 12B and is spaced apart from the first member 12A and the second member 12B in the thickness direction z. The second conductive member 32 includes copper (Cu). The second conductive member 32 has a second terminal portion 321, a plurality of connecting portions 322, a first coupling portion 323, and a second coupling portion 324.

[0067] 6, 7, and 9, each of the plurality of connection portions 322 is conductively bonded to one of the third principal surface electrodes 222 of the plurality of second semiconductor elements 22 via a conductive bonding layer 292. In the illustrated example, the plurality of connection portions 322 have a portion where the dimension in the thickness direction z is locally large, and have a shape that extends in the first direction x.

[0068] 14 to 17 , the multiple first positioning members 73 are disposed between the third principal surface electrode 222 and the connection portion 322 of the second conductive member 32. The multiple first positioning members 73 are in contact with the third principal surface electrode 222 and the connection portion 322. When viewed in the thickness direction z, the multiple first positioning members 73 overlap the connection portion 322.

[0069] The specific configuration of the first positioning member 73 is not limited in any way. The first positioning member 73 is preferably made of a conductive material. The first positioning member 73 contains a metal as a main component, such as aluminum (Al) or copper (Cu). In this embodiment, the first positioning member 73 is made of a wire piece. The first positioning member 73 is made of the same components as the third wire 43 and the fourth wire 44. The first positioning member 73 has the same cross-sectional area as the third wire 43 and the fourth wire 44. The first positioning member 73 is made of, for example, a part of a wire material having a wire diameter of 100 μm or more and 500 μm or less, for example, a part of a wire material having a wire diameter of 125 μm or 150 μm.

[0070] There is no limitation on the number of the multiple first positioning members 73. In the illustrated example, the semiconductor device A10 includes four first positioning members 73. For ease of explanation, the four first positioning members 73 are distinguished as first positioning members 731, 732, 733, and 734.

[0071] The first positioning members 731 and 732 and the first positioning members 733 and 734 are spaced apart from each other in the first direction x. Furthermore, the first positioning members 731 and 733 and the first positioning members 732 and 734 are spaced apart from each other in the second direction y. In the illustrated example, all of the multiple first positioning members 73 have a shape that follows the first direction x.

[0072] 14 to 17 , the multiple second positioning members 74 are disposed on the third principal surface electrode 222 and are adjacent to the connection portions 322 of the second conductive members 32 as viewed in the thickness direction z. The size of the multiple second positioning members 74 in the thickness direction z is greater than the distance between the third principal surface electrode 222 and the connection portions 322. The difference between the size of the second positioning members 74 in the thickness direction z and the distance between the third principal surface electrode 222 and the connection portions 322 is, for example, 100 μm or more and 300 μm or less. In the illustrated example, the multiple second positioning members 74 are in contact with the conductive bonding layer 292, but the multiple second positioning members 74 do not necessarily have to be in contact with the conductive bonding layer 292.

[0073] The specific configuration of the second positioning member 74 is not limited in any way. The second positioning member 74 is preferably made of a conductive material. The second positioning member 74 contains a metal as a main component, such as aluminum (Al) or copper (Cu). In this embodiment, the second positioning member 74 is made of a wire piece. The second positioning member 74 may be made of the same component as the third wire 43 and the fourth wire 44. The second positioning member 74 is made of a part of a wire material having a larger wire diameter than the wire material used for the first positioning member 73, for example.

[0074] There is no limitation on the number of the second positioning members 74. In the illustrated example, the semiconductor device A10 includes six second positioning members 74. For ease of explanation, the six second positioning members 74 are distinguished as second positioning members 741, 742, 743, 744, 745, and 746.

[0075] The second positioning members 741 and 743, and the second positioning members 742 and 744 are spaced apart from each other in the second direction y, with the connecting portion 322 sandwiched between them. The second positioning members 745 and 746 are spaced apart from each other in the first direction x, with the connecting portion 322 sandwiched between them.

[0076] As shown in FIGS. 2 and 8 , the first coupling portion 323 extends in the second direction y. The multiple connection portions 322 are connected to the first coupling portion 323. The second coupling portion 324 is located on the opposite side of the multiple connection portions 322 with respect to the first coupling portion 323 in the first direction x. The second coupling portion 324 is connected to the first coupling portion 323. The second coupling portion 324 extends in the first direction x. When viewed in the thickness direction z, the first coupling portion 323 and the second coupling portion 324 overlap the first member 12A. Therefore, when viewed in the thickness direction z, the second conductive member 32 overlaps the first member 12A.

[0077] 2 , the second terminal 321 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the first direction x. The second terminal 321 is located away from the first terminal 311 in the second direction y. The second terminal 321 is located away from the first member 12A in the thickness direction z. The composition of the second terminal 321 includes copper.

[0078] 2, the second terminal 321 is connected to the second coupling portion 324 of the second conductive member 32. Therefore, the second conductive member 32 is electrically connected to the third main surface electrodes 222 of the plurality of second semiconductor elements 22. The second terminal 321 is an N terminal (negative electrode) to which a DC power supply voltage to be converted into power is applied.

[0079] 7, a portion of the second terminal 321 is exposed to the outside from the sealing resin 50. A second mounting hole 321A is provided in the portion of the second terminal 321 that is exposed to the outside from the sealing resin 50. The second mounting hole 321A penetrates the second terminal 321 in the thickness direction z.

[0080] 2 and 3 , the third conductive member 33 is located on the opposite side of the first conductive member 31 and the second terminal portion 321 of the second conductive member 32 in the first direction x with respect to the plurality of first semiconductor elements 21. As shown in FIG. 6 , the third conductive member 33 has a third terminal portion 331 and a second pillow member 332. The third terminal portion 331 is conductively joined to the second main surface 121B of the second member 12B via the second pillow member 332. Therefore, the third terminal portion 331 is located away from the second member 12B in the thickness direction z. The composition of the third terminal portion 331 includes copper.

[0081] The third conductive member 33 is electrically connected to the second member 12B. Furthermore, the third conductive member 33 is electrically connected to the second back surface electrodes 221 of the plurality of second semiconductor elements 22 via the second member 12B. The AC power converted by the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 is output from the third terminal portion 331.

[0082] 6, a portion of the third terminal 331 is exposed to the outside from the sealing resin 50. A third mounting hole 331A is provided in the portion of the third terminal 331 that is exposed to the outside from the sealing resin 50. The third mounting hole 331A penetrates the third terminal 331 in the thickness direction z.

[0083] As shown in FIGS. 6 to 9 , the sealing resin 50 covers the two conductive members 12, the first wiring 15, the second wiring 16, the plurality of first semiconductor elements 21, and the plurality of second semiconductor elements 22. The sealing resin 50 also covers a portion of each of the first conductive member 31, the second conductive member 32, the third conductive member 33, the first gate terminal 171, the second gate terminal 172, the first detection terminal 181, the second detection terminal 182, and the plurality of dummy terminals 19. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, black epoxy resin. As shown in FIG. 5 , the sealing resin 50 has a top surface 51, a bottom surface 52, two first side surfaces 53, and two second side surfaces 54.

[0084] 6 to 9 , the top surface 51 faces the same side as the first main surface 121A of the first member 12A in the thickness direction z. The bottom surface 52 faces the opposite side in the thickness direction z from the top surface 51. As shown in FIG. 4 , a portion of the heat dissipation layer 103 of the support member 10 is exposed from the bottom surface 52.

[0085] As shown in FIGS. 6 and 7 , the two first side surfaces 53 are spaced apart from each other in the first direction x and are connected to the top surface 51 and the bottom surface 52. A portion of each of the first terminal 311 of the first conductive member 31 and the second terminal 321 of the second conductive member 32 is exposed to the outside from one of the two first side surfaces 53. A portion of each of the third terminal 331 of the third conductive member 33 is exposed to the outside from the other of the two first side surfaces 53. As shown in FIGS. 8 and 9 , the two second side surfaces 54 are spaced apart from each other in the second direction y and are connected to the top surface 51 and the bottom surface 52. A portion of each of the first gate terminal 171, the second gate terminal 172, the first detection terminal 181, the second detection terminal 182, and the plurality of dummy terminals 19 is exposed to the outside from one of the two second side surfaces 54.

[0086] 18 to 22, an example of a method for manufacturing the semiconductor device A10 will be described below. In these figures, the description will mainly focus on the portions where the first semiconductor element 21, the first wire 41, the plurality of first positioning members 71, and the fourth conductive member 14 are used, but the manufacturing process for the first positioning member 71 can also be applied to, for example, the second positioning member 72.

[0087] First, as shown in FIG. 18 , the first semiconductor element 21 is mounted on the first main surface 121A. Next, the wire material 40 is bonded to the first main surface electrode 212. For example, a wedge tool Wg is used to bond the wire material 40. A portion of the wire material 40 is pressed against the first main surface electrode 212 by the wedge tool Wg. Next, the wedge tool Wg is moved, and the wire material 40 is cut by the cutting tool Ct. As a result, a second wire 42 is formed as shown in FIG.

[0088] Next, a plurality of first positioning members 71 are formed using the wire material 40. After pressing a portion of the wire material 40 against the position where the first positioning members 71 are to be formed, the wire material 40 is cut by a cutting tool Ct. As a result, a plurality of first positioning members 71 are formed at predetermined positions, as shown in FIG. 20 . Note that the cross-sectional shape of the first positioning member 71 shown in FIG. 13 is formed by pressing the wire material 40 with a wedge tool Wg. In addition, a plurality of second positioning members 72 are formed using a wire material with a larger diameter than the wire material 40, using the same procedure as for the plurality of first positioning members 71.

[0089] Next, as shown in FIG. 21 , a conductive bonding material 290 is applied to the first principal surface electrode 212. The conductive bonding material 290 is, for example, solder paste. Next, as shown in FIG. 22 , the connection portion 141 of the fourth conductive member 14 is attached to the conductive bonding material 290. In this embodiment, the connection portion 141 is brought close to the first semiconductor element 21 in the thickness direction z, and the connection portion 141 and the multiple first positioning members 71 are brought into contact with each other. Thereafter, the conductive bonding material 290 is hardened, for example, using a reflow oven or the like, to form conductive bonding layers 291, 292. Then, the semiconductor device A10 is obtained by forming the sealing resin 50, etc.

[0090] Next, the effects of the semiconductor device A10 will be described.

[0091] 10 to 14, in this embodiment, a first positioning member 71 is interposed between the first principal surface electrode 212 and the connection portion 141. The first positioning member 71 is in contact with the first principal surface electrode 212 and the connection portion 141. This makes it possible to prevent the connection portion 141 from coming too close to, moving too far away from, or tilting too much relative to the first principal surface electrode 212. This makes it possible to make the thickness of the conductive bonding layer 292 more uniform.

[0092] The semiconductor device A10 includes a plurality of first positioning members 71. This makes it possible to more reliably make the thickness of the conductive bonding layer 292 uniform.

[0093] The first positioning members 711 and 712 and the first positioning members 713 and 714 are spaced apart from each other in the first direction x, which more reliably prevents the connection portion 141 (fourth conductive member 14) from tilting around an axis extending in the second direction y.

[0094] The first positioning members 711 and 713 and the first positioning members 712 and 714 are spaced apart from each other in the second direction y, which more reliably prevents the connection portion 141 (fourth conductive member 14) from tilting around an axis extending in the first direction x.

[0095] The first positioning members 71 are mainly made of metal, which makes it possible to prevent a decrease in electrical resistance between the first principal surface electrode 212 and the fourth conductive member 14 .

[0096] The plurality of first positioning members 71 are made of wire pieces. This allows the plurality of first positioning members 71 to be formed using a wedge tool Wg or the like. As shown in Figures 18 and 19, forming the plurality of first positioning members 71 using wire material 40 for forming second wires 42 or the like is preferable for improving the manufacturing efficiency of the semiconductor device A10.

[0097] The above-described effects also apply to the plurality of first positioning members 73 .

[0098] Furthermore, a plurality of second positioning members 72 are disposed adjacent to the connection portion 141. By placing the fourth conductive member 14 after forming the plurality of first positioning members 71 and second positioning members 72, the position of the fourth conductive member 14 in the first direction x and the second direction y can be more accurately determined.

[0099] 10 , the second positioning members 721 and 723 and the second positioning members 722 and 724 are spaced apart in the second direction y with the connecting portion 141 interposed therebetween, thereby making it possible to more accurately determine the position of the connecting portion 141 in the second direction y.

[0100] The second positioning members 725 and 726 are spaced apart in the first direction x with the connecting portion 141 therebetween, which makes it possible to more accurately determine the position of the connecting portion 141 in the first direction x.

[0101] When the second positioning members 72 are made of wire pieces, the second positioning members 72 can be formed using a wedge tool Wg or the like.

[0102] The effects of the plurality of second positioning members 72 described above also apply to the plurality of second positioning members 74 .

[0103] Furthermore, as in this embodiment, when the second conductive member 32 has multiple connection portions 322, it is possible to determine the position of the entire second conductive member 32 in the first direction x by arranging a second positioning member 74 on one side of one of the connection portions 322 in the first direction x and arranging a second positioning member 74 on the other side of the other connection portions 322 in the first direction x.

[0104] 23 shows a first modification of the semiconductor device A10. The semiconductor device A11 of this modification has a plurality of first positioning members 71 whose specific configuration differs from that of the plurality of first positioning members 71 of the semiconductor device A10.

[0105] In this modification, the plurality of first positioning members 71 have a shape that extends along the second direction y. The plurality of first positioning members 71 having such a shape can be formed by setting the orientation of the wedge tool Wg shown in FIGS.

[0106] This modification also makes it possible to make the thickness of the conductive bonding layer 292 more uniform. Furthermore, as can be understood from this modification, the specific shapes of the plurality of first positioning members 71 are not limited in any way, and the same applies to the plurality of first positioning members 73.

[0107] 24 shows a second modification of the semiconductor device A10. The semiconductor device A12 of this modification has a different number and arrangement of the multiple first positioning members 71 from the multiple first positioning members 71 of the semiconductor device A10.

[0108] In this modified example, the number of the multiple first positioning members 71 is three. The first positioning members 711 and 712 are arranged spaced apart from each other in the second direction y. The first positioning member 713 is spaced apart from the first positioning members 711 and 712 in the first direction x. In the second direction y, the first positioning member 713 is located between the first positioning members 711 and 712.

[0109] This modification also makes it possible to make the thickness of the conductive bonding layer 292 more uniform. Furthermore, as can be understood from this modification, there is no limitation on the number of first positioning members 71, and the same applies to the multiple first positioning members 73. By using three first positioning members 71, it is possible to support the connection portion 141 at three points. This makes it possible to make the thickness of the conductive bonding layer 292 more uniform.

[0110] 25 shows a third modification of the semiconductor device A10. The semiconductor device A13 of this modification differs from the semiconductor device A10 in the number and arrangement of the second positioning members 72.

[0111] In this modified example, the number of the plurality of second positioning members 72 is four. The second positioning members 721 and 722 are spaced apart in the second direction y with the connecting portion 141 therebetween.

[0112] This modification also makes it possible to make the thickness of the conductive bonding layer 292 more uniform. Furthermore, the second positioning members 721 and 722 can more accurately define the position of the connection portion 141 in the second direction y. As can be understood from this modification, the number of second positioning members 72 is not limited in any way, and the same applies to the number of second positioning members 74.

[0113] 26 shows a fourth modification of the semiconductor device A10. The semiconductor device A14 of this modification has a different specific configuration of the second positioning members 72 from the second positioning members 72 of the semiconductor device A10.

[0114] In this modified example, the second positioning member 72 includes a first portion 7211 and a second portion 7212. The first portion 7211 is in contact with the first principal surface electrode 212. The second portion 7212 is disposed on the first portion 7211. The first portion 7211 and the second portion 7212 are formed, for example, from a portion of the wire material 40 used to form the first positioning member 71. Therefore, for example, the cross-sectional area of ​​the first positioning member 71, the cross-sectional area of ​​the first portion 7211, and the cross-sectional area of ​​the second portion 7212 are the same.

[0115] This modification also makes it possible to make the thickness of the conductive bonding layer 292 more uniform. Furthermore, it is possible to form the first positioning member 71 and the second positioning member 72 using the same wire material 40. This improves the manufacturing efficiency of the semiconductor device A14.

[0116] 27 shows a semiconductor device according to a second embodiment of the present disclosure. A semiconductor device A20 according to this embodiment differs from the above-described embodiments in the configuration of the fourth conductive member 14.

[0117] The fourth conductive member 14 of this modification is formed, for example, by partially bending a metal plate material having a constant thickness. The connection portion 141 is located closer to the first principal surface electrode 212 in the thickness direction z than adjacent portions.

[0118] This embodiment also makes it possible to make the thickness of the conductive bonding layer 292 more uniform. Furthermore, as can be understood from this embodiment, the specific configuration of the fourth conductive member 14 is not limited in any way, and the same applies to the second conductive member 32.

[0119] 27 shows a semiconductor device according to a third embodiment of the present disclosure. The semiconductor device A30 of this embodiment does not include the plurality of second positioning members 72. This embodiment also allows the thickness of the conductive bonding layer 292 to be more uniform.

[0120] The semiconductor device and the method for manufacturing the semiconductor device according to the present disclosure are not limited to the above-described embodiments. The specific configurations of the semiconductor device and the method for manufacturing the semiconductor device according to the present disclosure can be freely modified in various ways. The present disclosure includes the embodiments described in the following appendices.

[0121] Appendix 1. A semiconductor device comprising: a semiconductor element having a first main surface electrode; a conductive member; a conductive bonding layer that conductively bonds the first main surface electrode and the conductive member; and a first positioning member that is disposed between the first main surface electrode and the conductive member and that is in contact with the first main surface electrode and the conductive member. Appendix 2. The semiconductor device according to Appendix 1, wherein the first positioning member is in contact with the conductive bonding layer. Appendix 3. The semiconductor device according to Appendix 2, wherein the first positioning member is primarily composed of metal. Appendix 4. The semiconductor device according to Appendix 3, wherein the first positioning member is a piece of wire. Appendix 5. The semiconductor device according to any one of Appendixes 1 to 4, comprising a plurality of the first positioning members. Appendix 6. The semiconductor device according to Appendix 5, wherein the plurality of first positioning members include two of the first positioning members that are spaced apart from each other in a first direction that is orthogonal to the thickness direction of the semiconductor element. Appendix 7. The semiconductor device according to Appendix 6, wherein the plurality of first positioning members include two of the first positioning members spaced apart from each other in the thickness direction and a second direction orthogonal to the first direction. Appendix 8. The semiconductor device according to Appendix 6, wherein the semiconductor element further has a second main surface electrode arranged on the same side as the first main surface electrode in the thickness direction, and a first wire joined to the second main surface electrode. Appendix 9. The semiconductor device according to Appendix 8, wherein the first positioning member and the first wire are made of the same material. Appendix 10. The semiconductor device according to Appendix 9, wherein the first positioning member and the first wire have the same cross-sectional area. Appendix 11. The semiconductor device according to any of Appendixes 8 to 10, further including a second wire electrically connected to the semiconductor element. Appendix 12. The semiconductor device according to Appendix 11, wherein the first positioning member and the second wire are made of the same material. Appendix 13. The semiconductor device according to Appendix 12, wherein the first positioning member and the second wire have the same cross-sectional area. Appendix 14. 14. The semiconductor device according to claim 8, wherein the first principal surface electrode is a source electrode, and the second principal surface electrode is a gate electrode.Appendix 15. The semiconductor device according to any one of Appendixes 1 to 14, further comprising a second positioning member disposed on the first principal surface electrode, adjacent to the conductive member when viewed in the thickness direction of the semiconductor element, and having a size in the thickness direction greater than the distance between the first principal surface electrode and the conductive member. Appendix 16. The semiconductor device according to Appendix 15, wherein the second positioning member is a piece of wire. Appendix 17. The semiconductor device according to Appendix 15 or 16, comprising a plurality of the second positioning members. Appendix 18. A method for manufacturing a semiconductor device, comprising the steps of: forming a first positioning member by arranging a portion of a wire material on the first principal surface electrode of a semiconductor element; arranging a conductive bonding material on the first principal surface electrode; bringing a conductive member into contact with the first positioning member and the conductive bonding material; and hardening the conductive bonding material to conductively bond the first principal surface electrode and the conductive member.

[0122] A10, A11, A12, A13, A14, A20, A30: semiconductor device 10: support member 11: insulating member 12: conductive member 12A: first member 12B: second member 13: heat dissipation member 14: fourth conductive member 15: first wiring 16: second wiring 19: dummy terminal 21: first semiconductor element 22: second semiconductor element 31: first conductive member 32: second conductive member 33: third conductive member 40: wire material 41: first wire 42: second wire 43: third wire 44: fourth wire 45: fifth wire 50: sealing resin 51: top surface 52: bottom surface 53: first side surface 54: second side surface 71, 711 to 714, 73, 731 to 734: first positioning member 72, 721 to 726, 74, 741 to 746: Second positioning member 103: Heat dissipation layer 120A: First layer 120B: Second layer 120C: Bonding layer 121: Main surface 121A: First main surface 121B: Second main surface 122: Back surface 123: First end surface 131: End surface 141: Connection portion 151: First insulating layer 152: First gate wiring 153: First detection wiring 154: First support layer 161: Second insulating layer 162: Second gate wiring 163: Second detection wiring 164: Second support layer 171: First gate terminal 172: Second gate terminal 181: First detection terminal 182: Second detection terminal 211: First back surface electrode 212: First main surface electrode 213: Second principal surface electrode 221: Second back surface electrode 222: Third principal surface electrode 223: Fourth principal surface electrode 290: Conductive bonding material 291: Conductive bonding layer 292: Conductive bonding layer 311: First terminal portion 311A: First mounting hole 312: First bolster 321: Second terminal portion 321A: Second mounting hole 322: Connection portion 323: First connecting portion 324: Second connecting portion 331: Third terminal portion 331A: Third mounting hole 332: Second bolster 7211: First portion 7212: Second portion Ct: Cutting tool Wg: Wedge tool x: First direction y: Second direction z: Thickness direction

Claims

1. a semiconductor element having a first principal surface electrode; A conductive member; a conductive bonding layer that conductively bonds the first principal surface electrode and the conductive member; a first positioning member disposed between the first principal surface electrode and the conductive member and in contact with the first principal surface electrode and the conductive member.

2. The semiconductor device according to claim 1 , wherein the first positioning member is in contact with the conductive bonding layer.

3. The semiconductor device according to claim 2 , wherein the first positioning member is mainly made of metal.

4. The semiconductor device according to claim 3 , wherein the first positioning member is a wire piece.

5. The semiconductor device according to claim 1 , further comprising a plurality of said first positioning members.

6. The semiconductor device according to claim 5 , wherein the plurality of first positioning members include two of the first positioning members spaced apart from each other in a first direction perpendicular to a thickness direction of the semiconductor element.

7. The semiconductor device according to claim 6 , wherein the plurality of first positioning members include two of the first positioning members spaced apart from each other in the thickness direction and a second direction perpendicular to the first direction.

8. the semiconductor element has a second principal surface electrode disposed on the same side as the first principal surface electrode in the thickness direction; The semiconductor device according to claim 6 , further comprising a first wire joined to said second principal surface electrode.

9. The semiconductor device according to claim 8 , wherein the first positioning member and the first wire are made of the same material.

10. The semiconductor device according to claim 9 , wherein the first positioning member and the first wire have the same cross-sectional area.

11. The semiconductor device according to claim 8 , further comprising a second wire electrically connected to the semiconductor element.

12. The semiconductor device according to claim 11 , wherein the first positioning member and the second wire are made of the same material.

13. The semiconductor device according to claim 12 , wherein the first positioning member and the second wire have the same cross-sectional area.

14. the first principal surface electrode is a source electrode, The semiconductor device according to claim 8 , wherein the second principal surface electrode is a gate electrode.

15. 2. The semiconductor device according to claim 1, further comprising a second positioning member disposed on the first principal surface electrode, adjacent to the conductive member when viewed in a thickness direction of the semiconductor element, and having a size in the thickness direction greater than a distance between the first principal surface electrode and the conductive member.

16. The semiconductor device according to claim 15 , wherein the second positioning member is a piece of wire.

17. The semiconductor device according to claim 15 , further comprising a plurality of the second positioning members.

18. forming a first positioning member by disposing a portion of a wire material on a first main surface electrode of a semiconductor element; disposing a conductive bonding material on the first principal surface electrode; bringing a conductive member into contact with the first positioning member and the conductive bonding material; and hardening the conductive bonding material to conductively bond the first principal surface electrode and the conductive member.