Transfer device, substrate processing device, transfer method, and substrate processing method

Abstract

This substrate processing device comprises: a transfer unit that transfers a chip that is adhered to a tape that covers an opening of a frame from the tape to a conveyor plate; a first cleaning unit that cleans a surface of the chip, in a state in which the conveyor plate holds the chip; an activation unit that activates the surface of the chip, in a state in which the conveyor plate holds the chip; and a bonding unit that removes the chip from the conveyor plate, orients the surface of the removed chip toward a substrate, and bonds the chip and the substrate.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] The chip mounting system described in Patent Document 1 includes a chip supply device, a bonding device, a surface treatment device, a carry-in / out unit, and a transport unit (paragraph

[0225] of Patent Document 1). The chip supply device supplies a plurality of chips individually. The bonding device mounts the chips supplied from the chip supply device onto a substrate.

[0003] Japanese Patent No. 6337400

[0004] One aspect of the present disclosure provides a technique for suppressing contamination caused by foreign matter adhering to a tape.

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a transfer unit that transfers a chip adhered to a tape covering an opening of a frame from the tape to a transport plate, a first cleaning unit that cleans the surface of the chip while the transport plate holds the chip, a first activation unit that activates the surface of the chip while the transport plate holds the chip, and a joining unit that removes the chip from the transport plate and faces the surface of the removed chip toward the substrate to join the chip to the substrate.

[0006] According to one aspect of the present disclosure, contamination caused by foreign matter adhering to the tape can be suppressed.

[0007] FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment. FIG. 2 is a cross-sectional view showing an example of a chip-attached substrate. FIG. 3 is a cross-sectional view showing an example of a substrate. FIG. 4 is a cross-sectional view showing an example of a chip bonded to a tape. FIG. 5 is a cross-sectional view showing an example of a transport plate. FIG. 6 is a cross-sectional view showing an example of a chip placed on a transport plate. FIG. 7 is a cross-sectional view showing an example of a transfer unit. FIG. 8 is a cross-sectional view showing an example of a bonding unit. FIG. 9 is a flowchart showing a substrate processing method according to an embodiment. FIG. 10A is a side view showing an example of a plurality of first suction heads, and FIG. 10B is a bottom view of the plurality of first suction heads shown in FIG. 10A. FIG. 11 is a cross-sectional view showing a modified first suction head. FIG. 12 is a cross-sectional view showing a first modified transport plate. FIG. 13 is a cross-sectional view showing a second modified transport plate. FIG. 14 is a cross-sectional view showing a third modified transport plate. FIG. 15A is a cross-sectional view showing a fourth modified transport plate, FIG. 15B is a cross-sectional view showing a state during chip suction, and FIG. 15C is a cross-sectional view showing a state during chip transport.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their description may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

[0009] 1 to 8, a substrate processing apparatus 1 according to one embodiment will be described. As shown in Fig. 2, the substrate processing apparatus 1 manufactures a chip-attached substrate CW by bonding chips CP to a substrate W. The chip-attached substrate CW includes the substrate W and a plurality of chips CP bonded to the substrate W.

[0010] The substrate W includes a base substrate Wa and a plurality of devices Wb formed on the base substrate Wa. The base substrate Wa is, for example, a silicon wafer, a compound semiconductor wafer, or a glass substrate. The devices Wb include semiconductor elements, circuits, terminals, or the like. The devices Wb are formed on a main surface We of the substrate W.

[0011] The chip CP has a base substrate CPa and a device CPb formed on the base substrate CPa. The base substrate CPa is, for example, a silicon wafer, a compound semiconductor wafer, or a glass substrate. The device CPb includes a semiconductor element, a circuit, a terminal, or the like. The device CPb is formed on a surface CPc of the chip CP.

[0012] The substrate processing apparatus 1 bonds the chip CP to the substrate W with the surface CPc of the chip CP facing the main surface We of the substrate W. The device CPb of the chip CP is electrically connected to the device Wb of the substrate W. As shown in Fig. 1, the substrate processing apparatus 1 includes a load / unload station 2, a processing station 3, and a controller 9. The load / unload station 2 and the processing station 3 are arranged in this order from the negative side of the X-axis to the positive side of the X-axis.

[0013] The carry-in / out station 2 includes a first mounting table 20. Cassettes C1 to C4 are mounted on the first mounting table 20. Cassette C1 accommodates a frame FR together with a plurality of chips CP. Cassette C2 accommodates a used frame FR from which at least some of the chips CP have been removed. Cassette C3 accommodates a substrate W before being bonded with a chip CP. Cassette C4 accommodates a substrate CW with chips attached.

[0014] As shown in Figure 4, the chips CP are attached to a tape TP that covers the opening of the frame FR, and the chips CP are arranged in the opening of the frame FR. The chips CP are obtained, for example, by dicing a substrate while the substrate is attached to the tape TP. The surfaces CPc of the chips CP are protected by a protective film PF before dicing. The protective film PF is disposed on the opposite side of the chips CP from the tape TP.

[0015] The plurality of chips CP are transferred from the tape TP to the transport plate 80, then removed from the transport plate 80, turned upside down, and bonded to the substrate W. The protective film PF is removed before bonding the chips CP to the substrate W. The transport plate 80 is not particularly limited, but may have, for example, an adhesive tape 81 to which the chips CP are attached, and an elastic sheet 82 to which the adhesive tape 81 is attached, as shown in Figures 5 and 6 .

[0016] In this embodiment, the adhesive tape 81 is not temperature sensitive, but it may be temperature sensitive, and its adhesive strength may change according to the temperature. By controlling the temperature of the transport plate 80, the chips CP can be easily separated. The material of the elastic sheet 82 is rubber or resin. The rubber is, for example, silicone rubber. The resin is, for example, polyimide, urethane acrylate, or water-based urethane. As will be described in more detail later, by locally deforming the elastic sheet 82, the bonding force between the chip CP and the transport plate 80 for each chip CP can be reduced.

[0017] 1 , the load / unload station 2 includes a transfer region 21, a third transfer arm 22, and a fourth transfer arm 23. The transfer region 21 is adjacent to the first mounting table 20. The third transfer arm 22 holds and transfers a frame FR in the transfer region 21. The fourth transfer arm 23 holds and transfers a substrate W in the transfer region 21. The third transfer arm 22 and the fourth transfer arm 23 are each capable of movement in the horizontal direction (both in the X-axis direction and the Y-axis direction) and vertical direction, and of rotation about a vertical axis.

[0018] The carry-in / out station 2 has a drive unit (not shown) that moves or rotates the third transfer arm 22 and the fourth transfer arm 23. The third transfer arm 22 and the fourth transfer arm 23 may be mounted on different Y-axis sliders and moved independently in the Y-axis direction as shown in FIG. 1 , or may be mounted on the same Y-axis slider and moved simultaneously in the Y-axis direction. When the third transfer arm 22 and the fourth transfer arm 23 are mounted on the same Y-axis slider, they are stacked in the Z-axis direction. When the third transfer arm 22 and the fourth transfer arm 23 are mounted on different Y-axis sliders, the multiple Y-axis sliders are arranged offset in the Z-axis direction.

[0019] The third transport arm 22 takes out the plurality of chips CP together with the frame FR from the cassette C1 and transports them to the transfer unit 33. The third transport arm 22 also takes out the used frame FR from the transfer unit 33 and stores it in the cassette C2. The third transport arm 22 that transports the plurality of chips CP together with the frame FR and the third transport arm 22 that transports the used frame FR may be provided separately.

[0020] The fourth transport arm 23 takes out the substrate W before the chips CP are bonded thereto from the cassette C3 and transports it to the substrate mounting part 37. The fourth transport arm 23 also takes out the chip-attached substrate CW from the substrate mounting part 37 and stores it in the cassette C4. The fourth transport arm 23 that transports the substrate W before the chips CP are bonded thereto and the fourth transport arm 23 that transports the chip-attached substrate CW may be provided separately.

[0021] The processing station 3 includes a transfer region 30, a first transfer arm 31, and a second transfer arm 32. The transfer region 30 extends in the X-axis direction. The first transfer arm 31 holds and transfers a transfer plate 80 in the transfer region 30. The second transfer arm 32 holds and transfers a substrate W in the transfer region 30. The first transfer arm 31 and the second transfer arm 32 are each capable of movement in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction, and of rotation about a vertical axis.

[0022] The processing station 3 has a drive unit (not shown) that moves or rotates the first transfer arm 31 and the second transfer arm 32. The first transfer arm 31 and the second transfer arm 32 may be mounted on different X-axis sliders and moved independently in the X-axis direction, as shown in FIG. 1 , or may be mounted on the same X-axis slider and moved simultaneously in the X-axis direction. When the first transfer arm 31 and the second transfer arm 32 are mounted on the same X-axis slider, they are stacked in the Z-axis direction. When the first transfer arm 31 and the second transfer arm 32 are mounted on different X-axis sliders, the multiple X-axis sliders are arranged offset in the Z-axis direction.

[0023] The first transfer arm 31 takes out the plurality of chips CP together with the transfer plate 80 from the transfer unit 33, and transfers them to the bonding unit 41 via the first cleaning unit 34, the first plasma treatment unit 35, and the first hydrophilic treatment unit 36. The first transfer arm 31 also takes out the transfer plate 80 from the bonding unit 41 and transfers it to the transfer unit 33. Thereafter, the transfer plate 80 is returned to the cassette C5. The transfer plate 80 may be reused without being returned to the cassette C5, that is, it may be transported again to the first cleaning unit 34 or the like while holding the chips CP.

[0024] The second transport arm 32 takes out the substrate W before the chips CP are bonded from the substrate mounting part 37, and transports it to the bonding part 41 via the second cleaning part 38, the second plasma processing part 39, and the second hydrophilic processing part 40. The second transport arm 32 also takes out the chip-attached substrate CW from the bonding part 41, and places it on the substrate mounting part 37 via the inspection part 42, etc. The second transport arm 32 that transports the substrate W before the chips CP are bonded and the second transport arm 32 that transports the chip-attached substrate CW may be provided separately.

[0025] The transport plate 80 preferably has the same diameter as the substrate W. In this case, the first transport arm 31 and the second transport arm 32 can be made of the same model number (i.e., the same dimensions and shape), thereby reducing costs. Similarly, the first cleaning unit 34 and the second cleaning unit 38, the first plasma processing unit 35 and the second plasma processing unit 39, or the first hydrophilic processing unit 36 ​​and the second hydrophilic processing unit 40 can be made of the same model number, thereby reducing costs. This also prevents the apparatus from becoming too large.

[0026] The processing station 3 includes a transfer section 33, a first cleaning section 34, a first plasma processing section 35, a first hydrophilic processing section 36, a substrate placement section 37, a second cleaning section 38, a second plasma processing section 39, a second hydrophilic processing section 40, a bonding section 41, an inspection section 42, a peeling section 43, and an annealing section 44. These sections 33 to 44 are adjacent to the transport region 30 and are arranged on the positive Y-axis side, negative Y-axis side, or positive X-axis side of the transport region 30, respectively.

[0027] As shown in FIG. 7 , the transfer unit 33 transfers the chips CP, which are adhered to the tape TP covering the opening of the frame FR, from the tape TP to the transport plate 80. This allows the chips CP to be separated from any foreign matter adhering to the tape TP, thereby preventing contamination of the chip-attached substrate CW by the foreign matter. The foreign matter is, for example, particles generated when dicing a substrate into multiple chips CP. Furthermore, if the transport plate 80 has the same diameter as the substrate W, placing the chips CP on the transport plate 80 allows the substrate W and the chips CP to be processed using equipment with the same model number.

[0028] The transfer unit 33 may place multiple chips CP having different functions (different electrical circuits) on the same transport plate 80. Tapes TP and frames FR may be prepared according to the function of the chip CP. In other words, multiple chips CP having different functions may be attached to different frames FR via different tapes TP. In this case, the transfer unit 33 transfers multiple chips CP having different functions from tapes TP prepared according to the function of the chip CP onto the same transport plate 80. Multiple chips CP having different functions may be attached to the same frame FR via the same tape TP. In this case, the transfer unit 33 transfers multiple chips CP having different functions from the same tape TP onto the same transport plate 80.

[0029] The transfer unit 33 has a third holder 331, a fourth holder 332, a third suction head 333, and a third drive unit 334. The third holder 331 holds the frame FR. The fourth holder 332 holds the transport plate 80. The third suction head 333 adsorbs the chip CP. The surface CPc of the chip CP is covered with a protective film PF, and the third suction head 333 adsorbs the chip CP via the protective film PF. The third suction head 333 comes into contact with the protective film PF. The third drive unit 334 moves the third suction head 333 in the horizontal and vertical directions to transfer the chip CP adsorbed by the third suction head 333 from the tape TP to the transport plate 80.

[0030] The transfer unit 33 has a second pressing unit 335. The second pressing unit 335 locally presses the chips CP via the tape TP and locally deforms the tape TP. This allows the chips CP to be pushed up individually, and prevents the chips CP from rubbing against each other when the chips CP are picked up.

[0031] The second pressing unit 335 has, for example, a pressing pin 335a that locally presses the tape TP and a drive unit 335b that drives the pressing pin 335a. The drive unit 335b includes, for example, a pneumatic cylinder. Note that the drive unit 335b may include a servo motor that controls the position of the pressing pin 335a.

[0032] Although not shown, multiple pressing pins 335a may press one chip CP. In this case, the control unit 9 may perform control to switch the combination (including the number) of pressing pins 335a to be used depending on the size or shape of the chip CP.

[0033] The transfer unit 33 has a second changing unit 336 that changes the local deformation position of the tape TP by relatively moving the third holding table 331 and the second pressing unit 335. The second changing unit 336 moves the third holding table 331, for example, but may also move the second pressing unit 335, or may move both.

[0034] 1, the transfer unit 33 is adjacent to the second mounting table 50, and a cassette C5 is placed on the second mounting table 50. The cassette C5 accommodates a transport plate 80. The transfer unit 33 has an internal transport arm (not shown). The internal transport arm removes the transport plate 80 from the cassette C5 and transfers it to the fourth support table 332.

[0035] The cassette C5 may be placed on the first placement table 20 of the carry-in / out station 2. In this case, the fourth transfer arm 23 takes out the transfer plate 80 from the cassette C5 and transfers it to the fourth support table 332.

[0036] Alternatively, the cassette C1 may be placed on the second mounting table 50. In this case, the internal transfer arm of the transfer unit 33 takes out the frame FR and the plurality of chips CP from the cassette C1 and transfers them to the third holder 331.

[0037] The first cleaning unit 34 cleans the front surface CPc of the chip CP while the transport plate 80 holds the chip CP. The front surface CPc of the chip CP faces away from the transport plate 80. If the front surface CPc of the chip CP is covered with a protective film PF, the first cleaning unit 34 removes the protective film PF. The front surface CPc of the chip CP can be cleaned. By subsequently performing activation and bonding, it is possible to prevent foreign matter such as air bubbles or particles from getting caught during bonding. Because the chip CP has already been transferred from the tape TP to the transport plate 80, the chip CP is less affected by particles generated during dicing, allowing the chip CP to be cleaned more effectively and preventing defects during activation and bonding.

[0038] The first plasma processing unit 35 performs plasma processing on the surface CPc of the chip CP. In the first plasma processing unit 35, oxygen gas, which is a processing gas, is excited under reduced pressure, for example, to form plasma and is ionized. The surface CPc of the chip CP is modified by irradiating the surface CPc of the chip CP with oxygen ions. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas. The first plasma processing unit 35 is an example of a first activation unit. The first activation unit activates the surface CPc of the chip CP.

[0039] The first hydrophilic treatment unit 36 ​​hydrophilizes the surface CPc of the chip CP. For example, the first hydrophilic treatment unit 36 ​​supplies pure water (e.g., deionized water) onto the chip CP while rotating the transport plate 80 held by the spin chuck. The pure water imparts OH groups to the surface CPc of the chip CP, which has been previously modified. The chip CP and the substrate W can be bonded together by utilizing hydrogen bonds between the OH groups. The first hydrophilic treatment unit 36 ​​is an example of a first activation unit.

[0040] The substrate W before bonding the chips CP is placed on the substrate placement part 37. A chip-attached substrate CW may be placed on the substrate placement part 37. The substrate placement part 37 on which the substrate W before bonding the chips CP is placed and the substrate placement part 37 on which the chip-attached substrate CW is placed may be provided separately, or a plurality of each may be provided.

[0041] The second cleaning unit 38 cleans the main surface Wc of the substrate W. This cleans the main surface Wc of the substrate W. By subsequently performing activation and bonding, it is possible to prevent foreign matter such as air bubbles or particles from being trapped during bonding.

[0042] The second plasma processing unit 39 performs plasma processing on the main surface We of the substrate W. In the second plasma processing unit 39, oxygen gas, which is a processing gas, is excited under reduced pressure, for example, to form plasma and is ionized. The main surface We of the substrate W is modified by irradiating the oxygen ions onto the main surface We of the substrate W. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas. The second plasma processing unit 39 is an example of a second activation unit.

[0043] The second hydrophilic treatment unit 40 hydrophilizes the main surface We of the substrate W. For example, the second hydrophilic treatment unit 40 supplies pure water (e.g., deionized water) onto the substrate W while rotating the substrate W held by the spin chuck. The pure water imparts OH groups to the main surface We of the substrate W, which has been modified in advance. The chip CP and the substrate W can be bonded by utilizing hydrogen bonds between the OH groups. The second hydrophilic treatment unit 40 is an example of a second activation unit.

[0044] 8, the bonding unit 41 removes the chip CP from the transport plate 80, and bonds the chip CP to the substrate W with the front surface CPc of the removed chip CP facing the main surface We of the substrate W. A substrate CW with a chip attached thereto is obtained. The device CPb of the chip CP and the device Wb of the substrate W are electrically connected.

[0045] The bonding portion 41 may bond multiple chips CP having different functions (different electrical circuits) to the same substrate W. Multiple chips CP having different functions are electrically connected to one device Wb. The substrate W has multiple devices Wb, and multiple chips CP having different functions are electrically connected to each of the multiple devices Wb. The number of chips CP electrically connected to one device Wb is not particularly limited.

[0046] The bonding unit 41 has a first holding table 411, a first suction head 412, and a first driving unit 413. The first holding table 411 holds the transport plate 80. The first suction head 412 sucks the surface CPc of the chip CP without contact. The first driving unit 413 moves the first suction head 412 in the horizontal and vertical directions. The first driving unit 413 moves the first suction head 412 relatively away from the transport plate 80 to remove the chip CP from the transport plate 80.

[0047] The first suction head 412 suctions the surface CPc of the chip CP while forming a gap between the first suction head 412 and the chip CP. This prevents contamination of the surface CPc of the chip CP. The first suction head 412 is, for example, an ultrasonic or Bernoulli type. The ultrasonic type utilizes the squeeze effect caused by ultrasonic vibration, while the Bernoulli type utilizes the Bernoulli effect. The ultrasonic type can suppress horizontal deviation compared to the Bernoulli type.

[0048] The bonding unit 41 has a first pressing unit 414. The first pressing unit 414 locally presses the chip CP via the transport plate 80 and locally deforms the transport plate 80. The first pressing unit 414 locally deforms the transport plate 80 into an upward convex shape, for example, to form a wedge-shaped gap around the periphery of the lower surface of the chip CP, thereby reducing the bonding force between the chip CP and the transport plate 80. This allows the chip CP to be easily removed from the transport plate 80.

[0049] The first suction head 412 suctions the chip CP pressed by the first pressing unit 414 without contact. A gap is formed between the first suction head 412 and the chip CP, so the suction force is weak. According to this embodiment, by locally deforming the transport plate 80 into an upward convex shape, a wedge-shaped gap is formed around the periphery of the underside of the chip CP, thereby reducing the bonding force between the chip CP and the transport plate 80. Therefore, even if the suction force is weak, the chip CP can be removed from the transport plate 80.

[0050] The first pressing unit 414 has a pressing pin 414a that locally presses the transport plate 80, and a drive unit 414b that drives the pressing pin 414a. The drive unit 414b includes, for example, a servo motor that controls the position of the pressing pin 414a. By controlling the position of the pressing pin 414a, contact between the chip CP and the first suction head 412 can be suppressed.

[0051] Although not shown, multiple pressing pins 414a may press one chip CP. In this case, the control unit 9 may perform control to switch the combination (including the number) of pressing pins 414a to be used depending on the size or shape of the chip CP.

[0052] The joining unit 41 has a first changing unit 415 that changes the local deformation position of the transport plate 80 by relatively moving the first holding table 411 and the first pressing unit 414. The first changing unit 415 moves the first holding table 411, for example, but may also move the first pressing unit 414, or may move both.

[0053] The bonding unit 41 has a second holding table 416, a second suction head 417, and a second drive unit 418. The second holding table 416 holds the substrate W. The second suction head 417 receives the chip CP from the first suction head 412 and sucks the back surface CPd of the chip CP, which faces opposite to the front surface CPc. Since it does not matter if the back surface CPd is dirty, the second suction head 417 comes into contact with the chip CP.

[0054] The second driving unit 418 moves the second suction head 417 in the horizontal and vertical directions, thereby bonding the chip CP to the substrate W with the surface CPc of the chip CP sucked by the second suction head 417 facing the main surface We of the substrate W. The second driving unit 418 turns the second suction head 417 upside down to turn the chip CP upside down.

[0055] In order to turn the chip CP upside down, the first driving unit 413 may turn the first suction head 412 upside down instead of the second driving unit 418 turning the second suction head 417 upside down. In the latter case, it is preferable that the first suction head 412 be an ultrasonic type. Unlike the Bernoulli type, the ultrasonic type can turn the chip CP upside down while suctioning it without contact.

[0056] The inspection unit 42 (see FIG. 1 ) inspects whether the bonding state between the substrate W and the chip CP is good or bad. The inspection is performed for each chip CP. The inspection items include at least one of the presence or absence of foreign matter such as air bubbles and the presence or absence of misalignment. For example, if air bubbles are present at the interface between the substrate W and the chip CP, the bubbles will burst when the chip-attached substrate CW is vacuum-processed. The bursting of the bubbles may cause problems even for chips CP that are in a good bonding state, or may contaminate the vacuum chamber. Alternatively, if air bubbles or particles are present at the interface between the substrate W and the chip CP, the height of the chip CP will increase, causing chipping during grinding or polishing, and the resulting impact may cause problems even for chips CP that are in a good bonding state.

[0057] The peeling unit 43 peels off chips CP that have been found to have a poor bonding state in the inspection by the inspection unit 42 from the substrate W. Peeling off chips CP that have a poor bonding state from the substrate W solves problems that arise when bubbles or particles are present at the interface between the substrate W and the chips CP, and improves the quality of the chip-attached substrate CW. The chips CP peeled off from the substrate W may be reused or discarded.

[0058] The annealing unit 44 heats the chip-attached substrate CW. Before the heat treatment, the chip CP and the substrate W are bonded by hydrogen bonding between OH groups. The heat treatment causes a dehydration condensation reaction, resulting in covalent bonds and improving the bonding strength between the chip CP and the substrate W. The peeling unit 43 peels off the chip CP before the annealing unit 44 heats the chip-attached substrate CW.

[0059] The control unit 9 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit), and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the substrate processing apparatus 1. The control unit 9 controls the operation of the substrate processing apparatus 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. A unit control unit that controls the operation of each unit constituting the substrate processing apparatus 1 may be provided, and a system control unit that controls multiple unit control units may be provided. The control unit 9 may be configured with the unit control units and the system control unit.

[0060] Next, a substrate processing method according to one embodiment will be described with reference to Fig. 9. The processing of Fig. 9 is performed under the control of a control unit 9.

[0061] First, the third transport arm 22 of the carry-in / out station 2 takes out the plurality of chips CP together with the frame FR from the cassette C1 and transports them to the transfer unit 33. Next, the transfer unit 33 transfers the chips CP from the tape TP to the transport plate 80 (step S101). Thereafter, the first transport arm 31 of the processing station 3 takes out the plurality of chips CP together with the transport plate 80 from the transfer unit 33 and transports them to the first cleaning unit 34. Next, the first cleaning unit 34 cleans the front surfaces CPc of each of the plurality of chips CP (step S102). Thereafter, the first transport arm 31 takes out the plurality of chips CP together with the transport plate 80 from the first cleaning unit 34 and transports them to the first plasma processing unit 35. Next, the first plasma processing unit 35 plasma-treats the front surfaces CPc of each of the plurality of chips CP (step S103). Thereafter, the first transfer arm 31 takes out the plurality of chips CP together with the transfer plate 80 from the first plasma treatment unit 35 and transfers them to the first hydrophilic treatment unit 36. Next, the first hydrophilic treatment unit 36 ​​hydrophilizes the surfaces CPc of the plurality of chips CP (step S104). Thereafter, the first transfer arm 31 takes out the plurality of chips CP together with the transfer plate 80 from the first hydrophilic treatment unit 36 ​​and transfers them to the bonding unit 41.

[0062] In parallel with the above processes, the following processes are performed. First, the fourth transport arm 23 of the load / unload station 2 removes the substrate W from the cassette C3 and transports it to the substrate platform 37. Then, the second transport arm 32 of the processing station 3 removes the substrate W from the substrate platform 37 and transports it to the second cleaning unit 38. Next, the second cleaning unit 38 cleans the main surface We of the substrate W (step S105). Then, the second transport arm 32 removes the substrate W from the second cleaning unit 38 and transports it to the second plasma processing unit 39. Next, the second plasma processing unit 39 plasma-processes the main surface We of the substrate W (step S106). Then, the second transport arm 32 removes the substrate W from the second plasma processing unit 39 and transports it to the second hydrophilization processing unit 40. Next, the second hydrophilization processing unit 40 hydrophilizes the main surface We of the substrate W (step S107). Thereafter, the second transport arm 32 takes the substrate W out of the second hydrophilic treatment section 40 and transports it to the bonding section 41 .

[0063] Next, the bonding unit 41 removes the chip CP from the transport plate 80 and bonds the chip CP to the substrate W with the front surface CPc of the removed chip CP facing the main surface We of the substrate W (step S108). This results in a chip-attached substrate CW. Thereafter, the second transport arm 32 removes the chip-attached substrate CW from the bonding unit 41 and transports it to the inspection unit 42.

[0064] Next, the inspection unit 42 inspects whether the bonding state between the substrate W and the chip CP is good or bad (step S109). The inspection unit 42 transmits the inspection result to the control unit 9. The control unit 9 checks whether there is a defect (step S110). The control unit 9 controls the transfer destination of the chip-attached substrate CW to either the annealing unit 44 or the peeling unit 43 according to the inspection result by the inspection unit 42.

[0065] If the bonding state of the chips CP is defective (step S110, NO), the destination of the chip-attached substrate CW is the peeling unit 43. The second transport arm 32 takes out the chip-attached substrate CW from the inspection unit 42 and transports it to the peeling unit 43. Next, the peeling unit 43 peels the chips CP that are defectively bonded from the substrate W (step S111). Thereafter, the second transport arm 32 takes out the chip-attached substrate CW from the peeling unit 43 and transports it to the annealing unit 44. Then, the processing from step S112 onwards is performed.

[0066] The first transport arm 31 may take out the chip-attached substrate CW from the peeling unit 43 and transport it to the bonding unit 41. The bonding unit 41 re-bonds the chip CP to the position where the chip CP was peeled. Thereafter, the processes from step S109 onwards may be performed again.

[0067] On the other hand, if there are no defects in the bonding state of all the chips CP (YES in step S110), the destination of the chip-attached substrate CW is the annealing unit 44. The second transport arm 32 removes the chip-attached substrate CW from the inspection unit 42 and transports it to the annealing unit 44. Next, the annealing unit 44 heats the chip-attached substrate CW (step S112). The heat treatment improves the bonding strength between the chips CP and the substrate W.

[0068] Thereafter, the second transport arm 32 removes the chip-attached substrate CW from the annealing section 44 and places it on the substrate placement section 37. Finally, the fourth transport arm 23 of the carry-in / out station 2 removes the chip-attached substrate CW from the substrate placement section 37 and stores it in the cassette C4. The chip-attached substrate CW stored in the cassette C4 is then removed from the substrate processing apparatus 1.

[0069] Next, an example of multiple first suction heads 412A to 412D will be described with reference to FIG. 10. As shown in FIG. 10, multiple first suction heads 412A to 412D may be prepared. The multiple first suction heads 412A to 412D have different dimensions or shapes. The control unit 9 performs control to switch the first suction heads 412A to 412D to be used depending on the dimensions or shape of the chip CP. This eliminates the need to replace (change) the first suction heads 412A to 412D.

[0070] The multiple first suction heads 412A to 412D are attached to a single holder 419. The first drive unit 413 moves the multiple first suction heads 412A to 412D collectively by moving the holder 419. The first drive unit 413 may also rotate the holder 419. The control unit 9 controls the movement or rotation of the holder 419 to switch between the first suction heads 412A to 412D to be used. This eliminates the need to reattach the first suction heads 412A to 412D to the holder 419.

[0071] If the first suction heads 412A to 412D are ultrasonic, an ultrasonic vibrator is provided in the holder 419. One ultrasonic vibrator vibrates the first suction heads 412A to 412D collectively. Note that there may be multiple ultrasonic vibrators, and the first suction heads 412A to 412D may be vibrated individually.

[0072] Next, a modified example of the first suction head 412 will be described with reference to Fig. 11. As shown in Fig. 11, the first suction head 412 has restraining portions 412a that suppress deformation of the transport plate 80 around the chip CP. The restraining portions 412a may be provided as a pair sandwiching the chip CP, or may be provided in a ring shape surrounding the chip CP. This allows selective deformation of a portion of the elastic sheet 82, thereby preventing unintended peeling of the chip CP.

[0073] Next, a transport plate 80 according to a first modified example will be described with reference to Fig. 12. As shown in Fig. 12, the transport plate 80 may have a mesh plate 83 on which a retractable elastic sheet 82 is attached. The mesh plate 83 has a plurality of through holes 83a. In a plan view (when viewed from above), the through holes 83a are smaller than the chips CP.

[0074] The first pressing unit 414 uses multiple pressing pins 414a that pass through multiple through holes 83a to press one chip CP via the elastic sheet 82. The driving unit 414b independently moves the multiple pressing pins 414a. The control unit 9 controls switching of the combination (including the number) of pressing pins 414a to be used depending on the dimensions or shape of the chip CP.

[0075] Next, a transport plate 80 according to a second modification will be described with reference to Fig. 13. As shown in Fig. 13, the elastic sheet 82 of the transport plate 80 has recesses 82a on the surface opposite the chips CP. The recesses 82a are provided for each chip CP. In plan view (when viewed from above), the recesses 82a are larger than the chips CP.

[0076] The transfer unit 33 places the chip CP on the portion thinned by the recess 82a of the transport plate 80. The first pressing unit 414 uses a pressing pin 414a inserted into the recess 82a to press the chip CP via the elastic sheet 82. By utilizing the difference in rigidity due to the difference in thickness, it is possible to selectively deform a portion of the elastic sheet 82, thereby preventing the chip CP from unintentionally peeling off.

[0077] Next, a transport plate 80 according to a third modified example will be described with reference to FIG. 14. As shown in FIG. 14, the transport plate 80 has a constraint plate 84 that constraints deformation of the elastic sheet 82. The constraint plate 84 is made of a metal material, such as stainless steel. A through hole 84a is formed in the constraint plate 84. The through hole 84a is provided for each chip CP. In a plan view (when viewed from above), the through hole 84a is larger than the chip CP.

[0078] The transfer unit 33 places the chip CP on a portion of the transport plate 80 where the through-hole 84a is provided. The first pressing unit 414 presses the chip CP via the elastic sheet 82 with a pressing pin 414a inserted into the through-hole 83a of the restraint plate 84. Part of the elastic sheet 82 can be selectively deformed, making it possible to prevent the chip CP from being unintentionally peeled off.

[0079] Next, a transport plate 80 according to a fourth modified example will be described with reference to Fig. 15. As shown in Fig. 15, the transport plate 80 includes a hollow plate 85, a plurality of through holes 85a formed on one side of the hollow plate 85, an elastic membrane 86 covering the plurality of through holes 85a, a communication hole 85b connecting the internal space of the hollow plate 85 with the external space, and an on-off valve 87 for opening and closing the communication hole 85b.

[0080] The elastic membrane 86 covers, for example, the upper surface of the hollow plate 85. The elastic membrane 86 is a rubber membrane or a resin membrane. When the internal space of the hollow plate 85 is depressurized below the external space of the hollow plate 85, the resulting pressure difference causes a portion of the elastic membrane 86 to bend and enter the through-hole 85a. The communication hole 85b is provided on the surface of the hollow plate 85 exposed from the elastic membrane 86, for example, on the underside of the hollow plate 85.

[0081] The on-off valve 87 has a valve body 87a that is movable between an open position (see FIGS. 15A and 15B) where the communication hole 85b is opened and a closed position (see FIG. 15C) where the communication hole 85b is closed, and a biasing member 87b that biases the valve body 87a from the open position toward the closed position. The valve body 87a and the biasing member 87b are provided in the internal space of the hollow plate 85. The biasing member 87b is, for example, a spring.

[0082] The on-off valve 87 has a valve stem 87c that presses a valve element 87a, and a flange 87d attached to one end (e.g., the lower end) of the valve stem 87c. The valve element 87a is attached to the other end (e.g., the upper end) of the valve stem 87c. The valve element 87a, the valve stem 87c, and the flange 87d are integrated. The valve stem 87c passes through the communication hole 85b. The flange 87d moves between a position where it is housed in the communication hole 85b (see FIGS. 15A and 15B) and a position where it protrudes from the hollow plate 85 (see FIG. 15C).

[0083] When the transport plate 80 is placed on the fourth holder 332 in the transfer unit 33, as shown in FIG. 15A, the upper surface of the fourth holder 332 pushes the flange 87d upward, and the flange 87d is accommodated in the communication hole 85b. As the flange 87d moves upward, the valve body 87a moves from the closed position to the open position. At this time, there is no pressure difference between the internal space of the hollow plate 85 and the external space of the hollow plate 85, and the elastic membrane 86 is generally flat. In this state, the chip CP is placed on the elastic membrane 86.

[0084] Next, a suction source (e.g., a vacuum pump) (not shown) sucks gas from the internal space of the hollow plate 85 to the external space of the hollow plate 85 through the communication hole 85b. When the internal space of the hollow plate 85 is depressurized below the external space of the hollow plate 85, the resulting pressure difference causes a portion of the elastic membrane 86 to bend and enter the through-hole 85a. As a result, as shown in FIG. 15B , a vacuum space is created between the lower surface of the chip CP and the elastic membrane 86, and the chip CP is adsorbed to the transport plate 80.

[0085] Next, when the transport plate 80 is removed from the fourth holder 332, the biasing member 87b moves the valve body 87a from the open position to the closed position, as shown in Fig. 15(C) . This maintains a state in which the internal space of the hollow plate 85 is depressurized more than the external space of the hollow plate 85. Therefore, a vacuum space is maintained between the lower surface of the chip CP and the elastic film 86, and the chip CP is maintained in a state of being attracted to the transport plate 80.

[0086] The chip CP is adsorbed onto the transport plate 80 and transported to the bonding section 41 via the first cleaning section 34, the first plasma processing section 35, and the first hydrophilic processing section 36. Then, in the bonding section 41, the first suction head 412 adsorbs the chip CP in a non-contact manner. The adsorption force of the first suction head 412 is greater than the adsorption force of the transport plate 80. Therefore, the chip CP can be removed from the transport plate 80.

[0087] Although the embodiments of the substrate processing apparatus and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

[0088] This application claims priority based on Japanese Patent Application No. 2022-172036 filed with the Japan Patent Office on October 27, 2022, the entire contents of which are incorporated herein by reference.

[0089] REFERENCE SIGNS LIST 1 Substrate processing apparatus 33 Transfer section 34 First cleaning section 35 First plasma processing section (first activation section) 36 First hydrophilic processing section (first activation section) 41 Bonding section 80 Transfer plate CP Chip FR Frame TP Tape W Substrate

Claims

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9. (Deleted)

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21. A transfer device that transfers a chip adhered to a tape covering an opening of a frame to a transfer plate from the tape, comprising: A transfer device that places a plurality of the chips having different electric circuits on one of the transfer plates.

22. The transfer device according to claim 21, wherein the transfer plate has a plurality of through holes provided on one side of the transfer plate and an elastic film covering the plurality of through holes.

23. The transfer device according to claim 21, wherein the transfer plate has a hollow plate, a plurality of through holes provided on one side of the hollow plate, an elastic film covering the plurality of through holes, a communication hole communicating an internal space and an external space of the hollow plate, and an opening / closing valve for opening and closing the communication hole.

24. A substrate processing apparatus comprising a bonding portion that removes the chip transferred from the tape to the transfer plate by the transfer device according to any one of claims 21 to 23 from the transfer plate and bonds the chip and the substrate with the surface of the removed chip facing the substrate.

25. The substrate processing apparatus according to claim 24, wherein the bonding portion bonds a plurality of the chips having different electric circuits to one of the substrates.

26. The substrate processing apparatus according to claim 24, further comprising a first activation portion that activates the surface of the chip while the transfer plate holds the chip.

27. The substrate processing apparatus according to claim 24, wherein the bonding portion has a first suction head that sucks the surface of the chip in a non-contact manner.

28. The bonding portion has a first pressing portion that locally presses the chip via the transfer plate and locally deforms the transfer plate, The substrate processing apparatus according to claim 27, wherein the first suction head sucks the surface of the chip pressed by the first pressing portion in a non-contact manner.

29. The substrate processing apparatus according to claim 28, wherein the first suction head has a restraining portion that suppresses deformation of the transfer plate around the chip.

30. The substrate processing apparatus according to claim 27, wherein the joining portion has a plurality of the first suction heads and a control unit that performs control to switch the first suction head to be used according to the size or shape of the chip.

31. The substrate processing apparatus according to claim 24, wherein the transfer plate has the same diameter as the substrate.

32. A transfer method, comprising: transferring a chip adhered to a tape covering an opening of a frame onto a transfer plate from the tape. A transfer method, comprising: placing a plurality of the chips having different electric circuits on one transfer plate.

33. A substrate processing method, comprising: removing the chip from the transfer plate using the substrate processing apparatus according to claim 24, and bonding the chip and the substrate with the surface of the removed chip facing the substrate.