Laminate manufacturing method, insulation material, and laminate

Abstract

This laminate manufacturing method comprises: a step for forming a first insulation layer, on a first support substrate, including a first thermosetting resin and first inorganic oxide particles; and a step for bonding a first surface of the first insulation layer to a second surface of a second insulation layer including a second thermosetting resin. In this manufacturing method, the second insulation layer includes second inorganic oxide particles which do not substantially include inorganic oxide particles or which includes the inorganic oxide particles in a content less than that of the first inorganic oxide particles included in the first insulation layer.

Description

Method for manufacturing laminate, insulating material, and laminate

[0001] The present disclosure relates to a method for manufacturing a laminate, an insulating material, and a laminate. The present disclosure relates to, for example, a method for manufacturing a laminate (semiconductor device) including a semiconductor chip, an insulating material used in the method for manufacturing the laminate, and a laminate including a semiconductor chip.

[0002] In recent years, various direct bonding techniques have been proposed to directly bond metal connection terminals together as a method for connecting vertically stacked semiconductor chips together or connecting semiconductor chips to semiconductor packages such as silicon interposers (see, for example, Patent Documents 1 to 3). In connection methods using direct bonding techniques, not only the connection terminals but also the insulating layers disposed around the connection terminals are bonded together. An inorganic insulating material such as silicon oxide is used as the insulating layer.

[0003] US Patent Application Publication No. 2020 / 0135636 US Patent Application Publication No. 2020 / 0135683 US Patent Application Publication No. 2020 / 0135684

[0004] Direct bonding techniques using inorganic insulating materials as insulating layers can sometimes result in poor adhesion between insulating layers due to the effects of cutting debris (debris) or surface irregularities generated during processes such as dicing. Therefore, direct bonding techniques using organic insulating materials, such as resin materials that are softer and cheaper than inorganic materials, as insulating layers have been considered, which embed debris and suppress surface irregularities during heat molding. On the other hand, organic insulating materials are more susceptible to thermal expansion than inorganic insulating materials and may cause misalignment. Therefore, adding inorganic fillers to organic insulating materials to reduce the thermal expansion coefficient of the insulating material has been considered. However, adding inorganic fillers reduces the ability to embed debris and suppress surface irregularities, as well as the bonding strength between organic insulating layers. Therefore, it is desirable to increase the adhesive strength between organic insulating layers while suppressing misalignment during bonding.

[0005] In one aspect, the present disclosure provides a method for producing a laminate, the method comprising the steps of: forming a first insulating layer containing a first thermosetting resin and first inorganic oxide particles on a first support substrate; and bonding a first surface of the first insulating layer to a second surface of a second insulating layer containing a second thermosetting resin. In this method, the second insulating layer is substantially free of inorganic oxide particles or contains second inorganic oxide particles in a content lower than the first inorganic oxide particles contained in the first insulating layer.

[0006] In this laminate fabrication method, the first insulating layer contains a thermosetting resin and inorganic oxide particles, while the second insulating layer contains a thermosetting resin but does not contain inorganic oxide particles, or contains fewer inorganic oxide particles than the first insulating layer. These first and second insulating layers are then bonded together. In this case, the inorganic oxide particles contained in the first insulating layer suppress the thermal expansion coefficient of the first insulating layer. Meanwhile, the second insulating layer contains no or fewer inorganic oxide particles, which allows the second insulating layer to embed debris, suppress surface irregularities, and improve the bonding strength between the insulating layers. As described above, this laminate fabrication method can increase the adhesive strength between the insulating layers while suppressing misalignment when bonding the insulating layers together. The term "substantially free" here also includes cases where the second insulating layer contains an extremely small amount of inorganic oxide.

[0007] In the method for producing the laminate described above, the content of the second inorganic oxide particles in the second insulating material constituting the second insulating layer is preferably not more than one-fifth of the content of the first inorganic oxide particles in the first insulating material constituting the first insulating layer. In this case, the second insulating layer can further bury debris, suppress surface irregularities, and improve the bonding strength between the insulating layers.

[0008] In the method for producing the laminate, the second insulating layer preferably contains the second inorganic oxide particles in an amount of 5% by volume or less, which can further bury debris, suppress surface irregularities, and improve the bonding strength between the insulating layers.

[0009] In the method for producing the laminate, the second insulating material constituting the second insulating layer preferably does not substantially contain inorganic oxide particles, which allows the second insulating layer to more reliably bury debris, suppress surface irregularities, and improve the bonding strength between the insulating layers.

[0010] In the above-described laminate fabrication method, the first insulating material containing a first thermosetting resin and first inorganic oxide particles is preferably adjusted to have a smaller thermal expansion coefficient than the second insulating material constituting the second insulating layer. In this case, the thermal expansion coefficient of the first insulating layer can be reduced, thereby suppressing misalignment due to thermal expansion. This allows for a laminate with high bonding accuracy. Furthermore, when wiring such as copper (Cu) is provided in the laminate, the expansion of the insulating material containing a thermosetting resin or the like may be greater than the expansion of the wiring, which may cause the wiring to be unable to keep up with the expansion of the insulating layer, resulting in poor bonding between the wiring. However, according to this fabrication method, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring is reduced, making it possible to suppress poor bonding between the wiring.

[0011] In the method for producing the laminate, the first insulating material containing the first thermosetting resin and the first inorganic oxide particles has a thermal expansion coefficient of 40×10 －６ / K or less. In this case, the thermal expansion coefficient of the first insulating layer can be reduced, thereby suppressing misalignment due to thermal expansion. This allows a laminate with high bonding accuracy to be obtained. Furthermore, when wiring such as copper (Cu) is provided in the laminate, the expansion of the insulating material containing a thermosetting resin or the like may be greater than the expansion of the wiring, which may cause the wiring to be unable to keep up with the expansion of the insulating layer, resulting in poor bonding between the wiring. However, according to this manufacturing method, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring can be reduced, making it possible to suppress poor bonding between the wiring.

[0012] In the above-described method for manufacturing a laminate, the content of the first inorganic oxide particles in the first insulating material containing a first thermosetting resin and first inorganic oxide particles is preferably 15% to 70% by volume. In this case, the inclusion of inorganic oxide particles can reduce the thermal expansion coefficient of the first insulating layer, thereby suppressing misalignment due to thermal expansion. This allows for a laminate with high bonding accuracy. Furthermore, when wiring such as copper (Cu) is provided in the laminate, the expansion of the insulating material containing a thermosetting resin or the like can sometimes be greater than the expansion of the wiring, which can cause the wiring to be unable to keep up with the expansion of the insulating layer, resulting in poor bonding between the wiring. However, according to this manufacturing method, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring can be reduced, making it possible to suppress poor bonding between the wiring.

[0013] The method for producing the laminate may further include a step of planarizing the first surface of the first insulating layer. In the step of planarizing the first insulating layer, the first insulating layer may be polished so that the arithmetic mean roughness of the first surface is 50 nm or less. When inorganic oxide particles are contained in the insulating layer, the surface roughness may be increased. However, in this production method, the first insulating layer is polished before bonding. This makes it possible to more reliably improve the accuracy and adhesive strength when bonding the first insulating layer to the second insulating layer. As a result, it is possible to more reliably improve the accuracy and adhesive strength when bonding the first insulating layer and the second insulating layer. The arithmetic mean roughness used here is the arithmetic mean roughness (Ra) specified in JIS B 0601 2001. The second insulating layer may also be polished in a similar manner.

[0014] In the above-described method for manufacturing a laminate, the first support substrate may include an inorganic interposer made of an inorganic material or an organic interposer made of an organic material containing inorganic oxide particles. In this case, by reducing the thermal expansion coefficient of the insulating layer on the interposer side, the difference in the thermal expansion coefficients between the insulating layer and the interposer can be reduced, thereby eliminating problems during package assembly in the interposer, such as warping, cracks, mounting defects, terminal connection defects, insulating layer formation defects, and interface peeling. Furthermore, by reducing the thermal expansion coefficient of the insulating layer on the interposer side, the difference in the thermal expansion coefficients between the insulating layer and the interposer can be reduced, thereby eliminating problems in the laminate (or semiconductor device), such as wiring deformation, connection breakdown, material peeling, wiring shorts, and material failure.

[0015] In the method for producing the laminate described above, a semiconductor chip may be attached to the surface of the second insulating layer opposite to the second surface. In this case, the insulating layer on the semiconductor chip side contains no inorganic oxide particles or only a small amount of inorganic oxide particles, which can prevent the particles from adhering to the semiconductor chip and causing connection defects, etc.

[0016] The method for manufacturing the laminate may further include a step of planarizing the first surface of the first insulating layer, a step of forming a second insulating layer containing a second thermosetting resin on a second support substrate, and a step of planarizing the second surface of the second insulating layer. In the bonding step, the planarized first surface and the planarized second surface may be bonded together. When inorganic oxide particles are contained in the insulating layer, the surface roughness may increase. However, in this manufacturing method, the insulating layer is planarized by polishing or the like before bonding. This can further increase the bonding strength between the first insulating layer and the second insulating layer.

[0017] The above-described laminate fabrication method preferably further includes a step of irradiating the second surface of the second insulating layer with ultraviolet light. In this case, the surface of the resin material constituting the second insulating layer reacts with ozone generated by the ultraviolet light irradiation, increasing surface free energy and generating highly reactive functional groups on the surface of the second insulating layer. In other words, the cured product of the thermosetting resin constituting the second insulating layer reaches a state close to that before curing. This further enhances the bonding strength between the first insulating layer and the second insulating layer. Unlike plasma treatment, ultraviolet light irradiation does not roughen the second surface of the second insulating layer, so bonding between the first insulating layer and the second insulating layer is not hindered. However, surface treatment using plasma treatment may also be performed. Furthermore, in this fabrication method, since ultraviolet light irradiation promotes bonding between the first insulating layer and the second insulating layer as described above, the heating temperature or heating time when bonding the first insulating layer and the second insulating layer can be lowered or shortened compared to conventional methods. This simplifies the bonding process and reduces the influence of heating on the laminate (or semiconductor device).

[0018] In the method for manufacturing the laminate, in the step of bonding the first surface and the second surface, the first insulating layer and the second insulating layer may be bonded by heating at 250° C. or less. In this case, the influence of heating on the laminate (or the semiconductor device) can be suppressed.

[0019] The method for manufacturing the laminate may further include a step of forming a first wiring electrode on the first support substrate, and in the step of forming the first insulating layer, the first wiring electrode may be sealed with a first insulating material containing a first thermosetting resin and first inorganic oxide particles, thereby protecting the first wiring electrode with the first insulating material.

[0020] The method for manufacturing the laminate may further include the steps of forming a second wiring electrode on a second support substrate and forming a second insulating layer on the second support substrate so as to seal the second wiring electrode with a second insulating material including a second thermosetting resin, and in the bonding step, the connection terminal of the first wiring electrode and the connection terminal of the second wiring electrode may be bonded when bonding the first surface of the first insulating layer and the second surface of the second insulating layer together. In this case, the first connection terminal and the second connection terminal can be more reliably bonded.

[0021] In another aspect, the present disclosure provides an insulating material. This insulating material is used in a method for producing a laminate, which includes the steps of forming a first insulating layer on a first support substrate using an insulating material containing a first thermosetting resin and first inorganic oxide particles, and bonding a first surface of the first insulating layer to a second surface of a second insulating layer containing a second thermosetting resin. In the production method using this insulating material, the second insulating layer is substantially free of inorganic oxide particles or contains second inorganic oxide particles in a content lower than the first inorganic oxide particles contained in the first insulating layer.

[0022] This insulating material contains a thermosetting resin and inorganic oxide particles, and a first insulating layer formed using this insulating material is bonded to a second insulating layer. In this case, the inorganic oxide particles contained in the first insulating layer suppress the thermal expansion coefficient of the first insulating layer, thereby suppressing misalignment when bonding the insulating layers together.

[0023] The above insulating material has a linear expansion coefficient of 40×10 －６ / K or less. In this case, the thermal expansion coefficient of the first insulating layer is more reliably suppressed. This makes it possible to more reliably suppress misalignment when bonding the insulating layers together.

[0024] The insulating material may have a first inorganic oxide particle content of 15 to 70 volume %. In this case, the thermal expansion coefficient of the first insulating layer is more reliably suppressed. This more reliably suppresses misalignment when bonding the insulating layers together.

[0025] In yet another aspect, the present disclosure provides another insulating material. This insulating material is used in a method for producing a laminate, the method including the steps of forming a first insulating layer containing a first thermosetting resin and first inorganic oxide particles on a first support substrate, and bonding a first surface of the first insulating layer to a second surface of a second insulating layer formed from an insulating material containing a second thermosetting resin. In the production method using this insulating material, the second insulating layer is substantially free of inorganic oxide particles or contains second inorganic oxide particles in a content lower than the first inorganic oxide particles contained in the first insulating layer.

[0026] This other insulating material contains a thermosetting resin but does not contain inorganic oxide particles, or contains fewer inorganic oxide particles than the first insulating layer, and a second insulating layer formed using this insulating material is bonded to the first insulating layer. In this case, the second insulating layer can bury debris, suppress surface irregularities, and improve the bonding strength between the insulating layers, thereby increasing the adhesive strength between the insulating layers.

[0027] The other insulating material preferably has a lower modulus of elasticity than the material constituting the first insulating layer when heated to at least 300° C. In this case, the second insulating layer can further bury debris, suppress surface irregularities, and improve the bonding strength between the insulating layers, thereby further increasing the adhesive strength between the insulating layers.

[0028] In the other insulating material, the content of the second inorganic oxide particles in the insulating material may be 5% by volume or less. In this case, the second insulating layer can further bury debris, suppress surface irregularities, and improve the bonding strength between the insulating layers. This can further increase the adhesive strength between the insulating layers.

[0029] In yet another aspect, the present disclosure provides a laminate including a first support substrate, a first insulating layer including a cured product of a first thermosetting resin and first inorganic oxide particles and formed on the first support substrate, and a second insulating layer including a cured product of a second thermosetting resin and bonded to the first insulating layer. The second insulating layer is substantially free of inorganic oxide particles or contains second inorganic oxide particles in a content lower than the first inorganic oxide particles contained in the first insulating layer.

[0030] In this laminate, the first insulating layer contains a cured thermosetting resin and inorganic oxide particles, while the second insulating layer contains a cured thermosetting resin but does not contain inorganic oxide particles or contains fewer inorganic oxide particles than the first insulating layer, and these first and second insulating layers are bonded together. In this case, the inorganic oxide particles contained in the first insulating layer suppress the thermal expansion coefficient of the first insulating layer. On the other hand, the second insulating layer contains no or fewer inorganic oxide particles, so the second insulating layer can embed debris, suppress surface irregularities, and improve the bonding strength between the insulating layers. As a result, a laminate can be obtained that suppresses misalignment when bonding the insulating layers together while increasing the bonding strength between the insulating layers.

[0031] In the laminate, the second insulating layer may contain the second inorganic oxide particles in an amount of 5% by volume or less, whereby the second insulating layer can further bury debris, suppress surface irregularities, and improve the bonding strength between the insulating layers.

[0032] The above-described laminate may further comprise a semiconductor chip disposed on the surface of the second insulating layer opposite to the surface bonded to the first insulating layer.

[0033] In the above-described laminate, the content of the first inorganic oxide particles in the first insulating layer may be 15% to 70% by volume. In this case, the inclusion of inorganic oxide particles can reduce the thermal expansion coefficient of the first insulating layer, thereby resulting in a laminate in which misalignment due to thermal expansion is suppressed. This allows for a laminate with high bonding accuracy. Furthermore, when wiring such as copper (Cu) is provided in the laminate, the expansion of the insulating material containing a thermosetting resin or the like may be greater than the expansion of the wiring, which may cause the wiring to be unable to keep up with the expansion of the insulating layer, resulting in poor bonding between the wiring. However, with this laminate, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring is reduced, resulting in a laminate in which poor bonding between the wiring is suppressed.

[0034] The laminate may further include a first wiring electrode at least partially disposed in the first insulating layer, the first wiring electrode having a connection terminal exposed from a first surface of the first insulating layer that is bonded to the second insulating layer, and a second wiring electrode at least partially disposed in the second insulating layer, the second wiring electrode having a connection terminal exposed from a second surface of the second insulating layer that is bonded to the first insulating layer. In this laminate, the connection terminal of the first wiring electrode and the connection terminal of the second wiring electrode may be joined.

[0035] According to the present disclosure, it is possible to provide a laminate in which the adhesive strength between insulating layers is increased while suppressing misalignment when the insulating layers are bonded to each other.

[0036] FIG. 1 is a cross-sectional view showing an example of a laminate. FIG. 2 is an enlarged cross-sectional view of a connection portion II in the laminate shown in FIG. 1. FIG. 3 is a diagram for explaining an outline of a connection method for producing the laminate shown in FIG. 1. FIG. 4 is a cross-sectional view showing another example of a laminate. FIG. 5 is an enlarged cross-sectional view of a connection portion V in the laminate shown in FIG. 4. FIG. 6 is a diagram for explaining an outline of a connection method for producing the laminate shown in FIG. 4. FIGS. 7(a) to 7(c) are diagrams showing a method for manufacturing the first and second members used in producing the laminate. FIGS. 8(a) to 8(c) are diagrams showing a method for manufacturing the first and second members used in producing the laminate, showing steps subsequent to FIG. 7. FIGS. 9(a) to 9(d) are diagrams showing a method for manufacturing the first member used in producing the laminate, showing steps subsequent to FIG. 8. FIGS. 10(a) to 10(c) are diagrams showing a method for manufacturing the second member used in producing the laminate, showing steps subsequent to FIG. 8. FIGS. 11(a) and 11(b) are diagrams showing a method for producing a laminate. FIGS. 12(a) to 12(c) are diagrams illustrating a method for fabricating a laminate. FIG. 13(a) is a cross-sectional view showing a laminate fabricated by a fabrication method different from that of this embodiment, and FIG. 13(b) is a cross-sectional view showing a laminate fabricated by the fabrication method according to this embodiment. FIGS. 14(a) to 14(c) are diagrams illustrating a method for fabricating a laminate different from that of this embodiment and the effect of thermal expansion on a laminate fabricated by that fabrication method. FIGS. 15(a) and 15(b) are diagrams for explaining the embedding of foreign matter using the fabrication method according to this embodiment. FIG. 16 is a table illustrating the bonding strength (shear strength) in the fabrication method for a laminate according to this embodiment.

[0037] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In the following description, identical or equivalent parts will be designated by the same reference numerals, and duplicate explanations will be omitted. Furthermore, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings unless otherwise specified. When terms such as "left," "right," "front," "back," "top," "bottom," "upper," and "lower" are used in the description and claims of this specification, these terms are intended for explanatory purposes only and do not necessarily mean that these relative positions will always be the same. Furthermore, the dimensional proportions of the drawings are not limited to those shown.

[0038] In this specification, the term "layer" encompasses not only a structure with a shape formed over the entire surface when observed in a plan view, but also a structure with a shape formed on a portion of the surface. In this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved. In this specification, a numerical range indicated using "A to B" indicates a range that includes the numerical values ​​A and B written before and after "to" as the minimum and maximum values, respectively.

[0039] (Example of Laminate) An example of a laminate will be described with reference to FIGS. 1 to 3. FIG. 1 is a cross-sectional view showing an example of a laminate. FIG. 2 is an enlarged cross-sectional view showing a connection portion II in the laminate shown in FIG. 1. FIG. 3 is a diagram for explaining an outline of a connection method for producing the laminate shown in FIG. 1. As shown in FIGS. 1 and 2, the laminate 1 is a semiconductor device including a first member 10 and a second member 20. The first member 10 has an interposer substrate 11 (first support substrate), an insulating layer 12, an insulating layer 13 (first insulating layer), and wiring electrodes 14. The second member 20 has a semiconductor chip 21, an insulating layer 22 (second insulating layer), and wiring electrodes 23.

[0040] The interposer substrate 11 is, for example, a silicon (Si) interposer substrate. The interposer substrate 11 is provided with TSVs (Through Silicon Vias) 15, which electrically connect the semiconductor chips and wiring above and below the interposer substrate 11. The interposer substrate 11 may be a substrate formed from an inorganic material other than silicon (e.g., a glass material). The thickness of the interposer substrate 11 is not particularly limited, but is, for example, 0.2 mm to 2.0 mm. When the thickness of the interposer substrate 11 is 0.2 mm or more, the handleability of the substrate can be improved. When the thickness of the interposer substrate 11 is 2.0 mm or less, the material cost can be reduced. The interposer substrate 11 may be in a panel shape or a wafer shape.

[0041] The insulating layer 12 is an insulating layer provided below the interposer substrate 11. The insulating layer 12 is formed from an organic insulating material, which may or may not contain an inorganic filler. The insulating layer 12 may be provided with a wiring electrode (not shown) connected to the TSV 15.

[0042] The insulating layer 13 is an organic insulating layer formed on the interposer substrate 11 (see FIG. 2 ), and includes a cured thermosetting resin 13a (cured first thermosetting resin) and inorganic oxide particles 13b (first inorganic oxide particles). The thickness of the insulating layer 13 may be, for example, 10 μm to 300 μm. Having a thickness of 10 μm or more ensures the insulation of the wiring electrodes 14 and ensures sufficient bonding strength when bonding the insulating layer 13 to the organic insulating layer 22. Having a thickness of 300 μm or less allows the overall thickness of the laminate 1 to be reduced. The wiring electrodes 14 are protected by being embedded within the insulating layer 13 so that the connection terminals 14a of the wiring electrodes 14 are exposed from a surface 13c (first surface) of the insulating layer 13 that is bonded to the insulating layer 22.

[0043] The thermosetting resin used for the insulating layer 13 is not particularly limited, and examples thereof include epoxy resin, acrylic resin, methacrylic resin, maleimide resin, phenol resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, etc. Among these, the thermosetting resin used for the insulating layer 13 is preferably an epoxy resin.

[0044] The inorganic oxide particles contained in the insulating layer 13 are not particularly limited, and may be, for example, silica (SiO ２ ), alumina (Al ２ O ３ ), titania (TiO ２ ), tantalum oxide (Ta ２ O ５ ), zirconia (ZrO ２The inorganic oxide particles may be inorganic fillers such as silica filler, zinc oxide (ZnO), or the like. The inorganic oxide particles may be used alone or in combination of two or more. As an example, the inorganic oxide particles contained in the insulating layer 13 are silica fillers.

[0045] The content of inorganic oxide particles contained in insulating layer 13 is, for example, 15 to 70 volume % with respect to the total volume of insulating layer 13. When the content of inorganic oxide particles is 15 volume % or more of the total volume, the proportion of the cured thermosetting resin contained in insulating layer 13 is reduced, thereby suppressing the coefficient of linear expansion (CTE) of insulating layer 13 and making it possible to reduce warping when heat is applied to laminate 1. When the content of inorganic oxide particles is 70 volume % or less of the total volume, it is possible to ensure a sufficient adhesive region between the thermosetting resins and increase the bonding strength between insulating layer 13 and insulating layer 22.

[0046] The wiring electrodes 14 are minute electrodes formed on the interposer substrate 11. A plurality of wiring electrodes 14 are provided on the insulating layer 13. When the wiring electrodes 14 are formed by plating or the like, they may be configured to include a seed layer portion and a plated portion. The wiring electrodes 14 are formed from a conductive material such as copper (Cu). The wiring electrodes 14 may be electrode pins. The wiring electrodes 14 may be connected to the TSVs 15 or to the wiring electrodes 23 of the second member 20.

[0047] The semiconductor chip 21 is, for example, a logic IC or a memory IC.

[0048] The insulating layer 22 includes a cured thermosetting resin 22a (a cured second thermosetting resin) and is an insulating layer provided below the semiconductor chip 21. In other words, the semiconductor chip 21 is disposed on the surface of the insulating layer 22 opposite to the surface bonded to the insulating layer 13. The thickness of the insulating layer 22 may be, for example, 10 μm to 300 μm, similar to that of the insulating layer 13, or may be thinner than that of the insulating layer 13. The wiring electrodes 23 are embedded and protected within the insulating layer 22 so that the connection terminals 23a are exposed from a surface 22c (second surface) of the insulating layer 22 that is bonded to the insulating layer 13. The thermosetting resin used for the insulating layer 22 may be the same as the thermosetting resin used for the insulating layer 13 and is not particularly limited, but may be, for example, an epoxy resin.

[0049] Unlike the insulating layer 13, the insulating layer 22 does not substantially contain inorganic oxide particles. However, the insulating layer 22 may be in a form in which a small amount of inorganic oxide particles (second inorganic oxide particles) is contained in the cured product 22a of the thermosetting resin. In this case, the insulating layer 22 may contain inorganic oxide particles at a content lower than that of the inorganic oxide particles 13b contained in the insulating layer 13. For example, the content of the inorganic oxide particles contained in the insulating layer 22 may be one-fifth or less of the content of the inorganic oxide particles 22b contained in the insulating layer 22. Alternatively, the content of the inorganic oxide particles contained in the insulating layer 22 may be, for example, 5% by volume or less with respect to the total volume of the insulating layer 22. The term "substantially not contained" as used herein is intended to include the case in which an extremely small amount of inorganic oxide is contained in the insulating layer 22.

[0050] The wiring electrodes 23 are minute electrodes formed on the semiconductor chip 21 (underside). A plurality of wiring electrodes 23 are provided on the semiconductor chip 21 and are electrically connected to the connection terminals of the semiconductor chip 21. When the wiring electrodes 23 are formed by plating or the like, they may be configured to include a seed layer portion and a plated portion. The wiring electrodes 23 are formed from a conductive material such as copper (Cu). The wiring electrodes 23 may be electrode pins. As described above, one end of the wiring electrodes 23 may be electrically connected to the connection terminals of the semiconductor chip 21, and the other end may be connected to the wiring electrodes 14 of the first member 10, etc.

[0051] In this laminate 1, the wiring electrodes 14 and 23 are provided in the insulating layers 13 and 22 so as to correspond to each other. When the layers are bonded as shown in FIG. 3 , the connection terminals 14a and 23a are bonded. The cured thermosetting resins 13a and 22a contained in the insulating layers 13 and 22 are also bonded together. In the laminate 1, the insulating layer 13 contains the cured thermosetting resin 13a and inorganic oxide particles 13b, while the insulating layer 22 contains the cured thermosetting resin 22a but does not contain inorganic oxide particles or contains fewer inorganic oxide particles than the insulating layer 13. These insulating layers 13 and 22 are bonded together. Therefore, the inorganic oxide particles contained in the insulating layer 13 suppress the thermal expansion coefficient of the insulating layer 13. Meanwhile, the insulating layer 22 contains no or fewer inorganic oxide particles, which allows the insulating layer 22 to embed debris, suppress surface irregularities, and improve the bonding strength between the insulating layers 13 and 22. In this way, in the laminate 1, it is possible to obtain a laminate in which the adhesive strength between the insulating layers is increased while suppressing misalignment when the insulating layers are bonded together.

[0052] In addition, the laminate 1 may be configured such that, contrary to the above-described configuration, the insulating layer 13 of the first member 10 is substantially free of inorganic oxide particles (or contains inorganic oxide particles at a content lower than that of the inorganic oxide particles contained in the insulating layer 22). In this case, the insulating layer 22 of the second member 20 contains inorganic oxide particles, and the content of the inorganic oxide particles contained in the insulating layer 22 may be, for example, 15% by volume to 70% by volume with respect to the total volume of the insulating layer 22. In other words, in this modification, the content of inorganic oxide particles in the insulating layer 13 of the first member 10 and the content of inorganic oxide particles in the insulating layer 22 of the second member 20 are reversed. Even with such a modification, the same effects as those described above can be obtained.

[0053] (Another Example of Laminate) Another example of the laminate will be described with reference to FIGS. 4 to 6 . FIG. 4 is a cross-sectional view showing another example of the laminate. FIG. 5 is an enlarged cross-sectional view showing a connection portion V in the laminate shown in FIG. 4 . FIG. 6 is a diagram for explaining an outline of a connection method for producing the laminate shown in FIG. 4 . As shown in FIGS. 4 and 5 , the laminate 1A is a semiconductor device including a first member 30 and a second member 20. The first member 30 includes a substrate 31 (first support substrate), an insulating layer 32, an insulating layer 33 (first insulating layer), wiring electrodes 34, and a semiconductor chip 35. The first member 30 may be an organic interposer. The second member 20 includes a semiconductor chip 21, an insulating layer 22 (second insulating layer), and wiring electrodes 23, similar to the laminate 1 shown in FIG. 1 .

[0054] The substrate 31 is, for example, a glass substrate or an organic substrate. The thickness of the substrate 31 is not particularly limited, but is, for example, 0.7 mm to 1.5 mm. When the thickness of the substrate 31 is 0.7 mm or more, the handleability of the substrate can be improved. When the thickness of the substrate 31 is 1.5 mm or less, the material cost can be reduced. The substrate 31 may be in a panel shape or a wafer shape.

[0055] The insulating layer 32 is an insulating layer provided on the substrate 31. The insulating layer 32 is made of an organic insulating material, which may or may not contain an inorganic filler. The insulating layer 32 is thinner than the insulating layer 33 described below.

[0056] The insulating layer 33 is an organic insulating layer formed on the substrate 31 via the insulating layer 32 (see FIG. 5 ), and includes a cured thermosetting resin 33a (cured first thermosetting resin) and inorganic oxide particles 33b (first inorganic oxide particles). The insulating layer 33 also functions as an encapsulant layer that encapsulates the semiconductor chip 35 mounted on the substrate 31. The thickness of the insulating layer 33 may be, for example, 50 μm to 300 μm. Having a thickness of 50 μm or more ensures the insulation of the wiring electrodes 34 and ensures sufficient bonding strength when bonding the insulating layer 33 to the insulating layer 22. Having a thickness of 300 μm or less allows the overall thickness of the laminate 1A to be reduced. The wiring electrodes 34 are protected by being embedded in the insulating layer 33 so that the connection terminals 34a of the wiring electrodes 34 are exposed from a surface 33c (first surface) of the insulating layer 33 that is bonded to the insulating layer 22.

[0057] The thermosetting resin used for the insulating layer 33 is not particularly limited, and examples thereof include epoxy resin, acrylic resin, methacrylic resin, maleimide resin, phenol resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, etc. Among these, the thermosetting resin used for the insulating layer 33 is preferably epoxy resin.

[0058] The inorganic oxide particles contained in the insulating layer 33 are not particularly limited, and may be, for example, silica (SiO ２ ), alumina (Al ２ O ３ ), titania (TiO ２ ), tantalum oxide (Ta ２ O ５), zirconia (ZrO ２ The inorganic oxide particles may be inorganic fillers such as silica filler, zinc oxide (ZnO), or the like. The inorganic oxide particles may be used alone or in combination of two or more. As an example, the inorganic oxide particles contained in the insulating layer 33 are silica fillers.

[0059] The content of inorganic oxide particles in the insulating layer 33 is, for example, 15 to 70 volume % relative to the total volume of the insulating layer 33. When the content of inorganic oxide particles is 15 volume % or more of the total volume, the proportion of the cured thermosetting resin contained in the insulating layer 33 is reduced, thereby suppressing the coefficient of linear expansion (CTE) of the insulating layer 13 and making it possible to reduce warping when heat is applied to the laminate 1A. When the content of inorganic oxide particles is 70 volume % or less of the total volume, it is possible to ensure a sufficient adhesive region between the thermosetting resins and increase the bonding strength between the insulating layer 33 and the insulating layer 22.

[0060] In this laminate 1A, similar to the laminate 1, the wiring electrodes 34 and 23 are provided in the insulating layers 33 and 22 so as to correspond to each other. When the laminate 1A is bonded as shown in FIG. 6, the connection terminals 34a and 23a are bonded to each other. The cured thermosetting resins 33a and 22a contained in the insulating layers 33 and 22 are also bonded to each other. In the laminate 1A, the insulating layer 33 contains the cured thermosetting resin 33a and inorganic oxide particles 33b, while the insulating layer 22 contains the cured thermosetting resin 22a but does not contain inorganic oxide particles (or contains fewer inorganic oxide particles than the insulating layer 13). These insulating layers 33 and 22 are bonded together. Therefore, the inorganic oxide particles 33b contained in the insulating layer 33 suppress the thermal expansion coefficient of the insulating layer 33. In the laminate 1A, the insulating layer 33 is thicker than the insulating layer 22, thereby reducing the thermal expansion of the laminate 1A as a whole. On the other hand, since the insulating layer 22 contains no or few inorganic oxide particles, the insulating layer 22 can bury debris, suppress surface irregularities, and improve the bonding strength between the insulating layers 33 and 22. In this way, with the laminate 1A, it is possible to obtain a laminate in which the bonding strength between the insulating layers is increased while suppressing misalignment when the insulating layers are bonded together.

[0061] Note that, in the laminate 1A, contrary to the above-described embodiment, the insulating layer 33 of the first member 30 may be configured to substantially not contain inorganic oxide particles (or to contain inorganic oxide particles at a content lower than that of the inorganic oxide particles contained in the insulating layer 22). In this case, the insulating layer 22 of the second member 20 may contain inorganic oxide particles, and the content of the inorganic oxide particles contained in the insulating layer 22 may be, for example, 15% by volume to 70% by volume with respect to the total volume of the insulating layer 22. In other words, in this modification, the content of inorganic oxide particles in the insulating layer 33 of the first member 30 and the content of inorganic oxide particles in the insulating layer 22 of the second member 20 are reversed. Even with such a modification, the same effects as those described above can be obtained.

[0062] (Method for Manufacturing Semiconductor Device) Next, a method for manufacturing the above-described laminates 1, 1A (a method for fabricating a laminate) will be described in order with reference to FIGS. 7 to 12. FIGS. 7 to 9 are diagrams showing a method for manufacturing a first member used in fabricating the laminate. FIGS. 7, 8, and 10 are diagrams showing a method for fabricating a second member used in fabricating the laminate. FIGS. 11 and 12 are diagrams showing a method for fabricating a laminate. In the following description, a method for fabricating the connection structure between the first member 10 and the second member 20 will be mainly described. The fabrication of the interposer substrate 11, the insulating layer 12, and the TSV 15 will be omitted because they can be fabricated using conventional techniques. The method for fabricating the connection structure between the first member 30 and the second member 20 is similar, and therefore may be omitted.

[0063] First, the first member 10 is fabricated. To fabricate the first member 10, as shown in FIG. 7A, a seed layer 102 is formed on a support substrate 101 (first support substrate). The seed layer 102 serves as a seed when forming electrolytic copper plating, which will be described later, and is formed of, for example, nickel. The support substrate 101 is not particularly limited, but is, for example, a highly rigid substrate such as a silicon plate or a glass plate. The thickness of the support substrate 101 is not particularly limited, but is, for example, 0.2 mm to 2.0 mm. When the support substrate 101 is 0.2 mm or more, the handleability of the support substrate 101 can be improved. When the support substrate 101 is 2.0 mm or less, material costs can be suppressed, thereby reducing costs. The support substrate 101 may be in the form of a wafer or a panel. The size of the support substrate 101 is not particularly limited, but may be, for example, a wafer with a diameter of 200 mm, 300 mm, or 450 mm, or a rectangular panel with a side length of 300 mm to 700 mm. The support substrate 101 corresponds to, for example, the interposer substrate 11 of the first member 10.

[0064] Next, as shown in FIG. 7B, a photosensitive resist is applied onto the seed layer 102 to form a resist layer 103. Any known material can be used as the photosensitive resist. Thereafter, as shown in FIG. 7C, exposure is performed to form vias 104 in regions corresponding to the wiring electrodes. This results in the formation of vias 104 in which the seed layer 102 is exposed.

[0065] Next, as shown in (a) of FIG. 8, a wiring electrode 105 (first wiring electrode) is formed on the seed layer 102 in the via 104 by electrolytic copper plating. Thereafter, as shown in (b) and (c) of FIG. 8, the resist layer 103 is peeled off and removed, and the seed layer 102 other than the wiring electrode 105 is removed by etching. In this manner, the wiring electrode 105 including the seed portion 102a is formed on the support substrate 101. Note that the method for forming the wiring electrode 105 is not limited to this, and the wiring electrode 105 may be formed by other methods. The wiring electrode 105 formed in this manner can function as a wiring pad, an electrode pad, a connection bump, a pillar, or the like.

[0066] Next, as shown in FIG. 9A , an insulating layer 106 is formed on the support substrate 101 so that the wiring electrodes 105 are sealed with an organic insulating material (first insulating material) containing a thermosetting resin 106a (first thermosetting resin) and inorganic oxide particles 106b (first inorganic oxide particles). At this time, the wiring electrodes 105 may be completely covered with the organic insulating material. During this formation, the organic insulating layer 106 containing the thermosetting resin 106a and the inorganic oxide particles 106b may be sealed by forming it in a mold using a compression or transfer molding machine. Alternatively, the organic insulating layer 106 containing the thermosetting resin 106a and the inorganic oxide particles 106b molded into a film shape may be sealed using a roll or pressure laminating molding machine. The sealed support substrate 101 is then heated using an oven, a hot plate, or the like. As a result, an organic insulating layer 106 containing a thermosetting resin 106a and inorganic oxide particles 106b is formed on the support substrate 101. By this heating, the thermosetting resin of the organic insulating layer 106 may be in a completely cured state or in an incompletely cured state (e.g., semi-cured or B-stage).

[0067] The materials of the thermosetting resin 106a and inorganic oxide particles 106b constituting the organic insulating layer 106 are not particularly limited, but from the viewpoint of high rigidity and embeddability, they are, for example, encapsulants that can be formed in a mold using a compression or transfer molding machine. Alternatively, the material constituting the organic insulating layer 106 may be an encapsulant, build-up material, or solder resist material molded into a film. In this case, from the viewpoint of preventing the entrapment of air bubbles, the film-like material may be laminated on the support substrate 101 under reduced pressure.

[0068] The thermosetting resin constituting the organic insulating layer 106 is not particularly limited, and examples thereof include epoxy resin, acrylic resin, methacrylic resin, maleimide resin, phenol resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, etc. Of the above thermosetting resins, the thermosetting resin used for the organic insulating layer 106 is preferably epoxy resin.

[0069] The thermosetting resin may contain a crosslinking agent that crosslinks by heat. Although not particularly limited, known crosslinking agents can be used, such as epoxy compounds, isocyanate compounds, phenolic resins, phenoxy resins, unsaturated polyester resins, alkyd resins, urethane resins, melamine resins, urea resins, guanamine resins, polyimide resins, polyamide resins, vinyl ester resins, and diallyl phthalate resins, and two or more of these may be used in combination.

[0070] The inorganic oxide particles constituting the organic insulating layer 106 are not particularly limited, and may be, for example, silica (SiO ２ ), alumina (Al ２ O ３ ), titania (TiO ２ ), tantalum oxide (Ta ２ O ５ ), zirconia (ZrO ２ Inorganic fillers such as silica filler, zinc oxide (ZnO), etc. can be used. The inorganic oxide particles may be used alone or in combination of two or more. As an example, the inorganic oxide particles contained in the organic insulating layer 106 are silica fillers.

[0071] The content of inorganic oxide particles contained in the organic insulating layer 106 is, for example, 15 to 70 volume % of the total volume of the organic insulating material constituting the organic insulating layer 106. By making the content of inorganic oxide particles 15 volume % or more of the total volume, it is possible to prevent the coefficient of linear expansion (CTE) of the entire organic insulating layer 106 from increasing, thereby reducing warpage after the sealing and lamination processes. By making the content of inorganic oxide particles 70 volume % or less of the total volume, it is possible to ensure a bonding area between the thermosetting resins and obtain sufficient adhesive strength when the surfaces of the polished substrates are pressure-bonded while being heated in the bonding process described below. By containing inorganic oxide particles in this way, the organic insulating material used to form the organic insulating layer 106 has a thermal expansion coefficient of 40×10 －６ / K or less.

[0072] The materials of the thermosetting resin and inorganic oxide particles constituting the organic insulating layer 106 are not particularly limited, and may be selected depending on the semiconductor package structure to be applied. For example, in the case of a semiconductor package in which a memory is stacked on an interposer substrate to which a sealing material (such as laminate 1A) is applied, when the sealing material constituting the interposer and the sealing material formed to cover the memory chip are stacked, the sealing materials are stacked on each other by applying the manufacturing method described above.

[0073] The thickness of such an organic insulating layer 106 is, for example, 10 μm to 400 μm. When the thickness of the organic insulating layer 106 is 10 μm or more, the adhesive strength when bonding the organic insulating layer 106 to another organic insulating layer can be ensured. When the thickness of the organic insulating layer 106 is 400 μm or less, warping of the entire substrate can be reduced, making it easier to attach to a device in the subsequent grinding process.

[0074] Next, as shown in FIGS. 9A and 9B , the surface 106c of the organic insulating layer 106 formed on the support substrate 101 is ground to a predetermined thickness. This grinding is performed, for example, by using a grinding wheel rotating at high speed. This grinding process exposes the surface 105a of the wiring electrode 105 from the surface 106d of the organic insulating layer 106A. The surface roughness of the organic insulating layer 106A, which includes the thermosetting resin 106a and the inorganic oxide particles 106b, after this grinding process is 0.5 μm or less in arithmetic mean roughness Ra when measured at 20x magnification using a laser microscope, in consideration of grinding variation in the subsequent polishing process. In FIG. 9B , the surface 106d is shown with a certain degree of roughness emphasized. The arithmetic mean roughness Ra used here is the arithmetic mean roughness (Ra) specified in JIS B 0601 2001.

[0075] Next, as shown in FIG. 9C, the surface 106d of the organic insulating layer 106A containing the thermosetting resin 106a and the inorganic oxide particles 106b is polished and planarized by chemical mechanical polishing (CMP) using a polishing liquid. In this polishing process, the surface 106d of the organic insulating layer 106A containing the thermosetting resin 106a and the inorganic oxide particles 106b is planarized. This polishing process is performed, for example, by polishing the polished portion (organic insulating layer 106A) on the support substrate 101 while supplying a polishing liquid 112 between the polishing pad 111 (abrasive cloth) and the polished portion. Various polishing liquids can be used as the polishing liquid 112 for CMP. CMP polishing liquids are classified by the type of abrasive (abrasive particles) they contain, such as cerium oxide (ceria) particles, silicon oxide (silica) particles, aluminum oxide (alumina) particles, or organic resin particles. From the standpoint of polishing rate, ceria-based particles are used as the abrasive.

[0076] By such polishing, the surface 106d of the organic insulating layer 106A may be polished, so that the arithmetic mean roughness Ra of the surface 106e is 50 nm or less. By making the arithmetic mean roughness Ra of the surface 106e of the organic insulating layer 106B 50 nm or less, it is possible to suppress the shedding of filler particles in the organic insulating layer 106B and insufficient grinding of the filler surface. Furthermore, it is possible to prevent the occurrence of voids at the adhesive interface between the organic insulating layers due to wear of the surface 106e of the organic insulating layer 106B, thereby ensuring more reliable adhesion between the organic insulating layers (described below). The arithmetic mean roughness Ra of the polished organic insulating layer 106B is only required to be 50 nm or less, and polishing or grinding may be performed by methods other than CMP. For example, grinding by a flycut method is applicable. Alternatively, a combination of the flycut method and etching may be used.

[0077] The thickness of the organic insulating layer 106B after the grinding and polishing processes described above is, for example, 1 μm to 300 μm. By making the thickness of the organic insulating layer 106B 1 μm or more, it is possible to increase yield without excessive grinding of the embedded wiring and electrodes. By making the thickness of the organic insulating layer 106B 300 μm or less, it is possible to suppress warping of the entire substrate and prevent voids from occurring at the contact interface during the compression bonding process described below, which would prevent compression bonding from being impossible. In this way, the first member 10 is formed.

[0078] As shown in FIG. 11A, a plasma (O ２Alternatively, irradiating the organic insulating layer 106B with ultraviolet light (Ar) or ultraviolet (UV) may be performed. When irradiated with ultraviolet light, the surface of the resin material constituting the organic insulating layer 106B reacts with ozone generated by the ultraviolet light irradiation, increasing the surface free energy and generating highly reactive functional groups on the surface 106e of the organic insulating layer 106B. This results in the cured product of the thermosetting resin constituting the organic insulating layer 106B being in a state similar to that before curing. This increases the bonding strength when bonding the organic insulating layer 106B to the organic insulating layer 206A. Unlike plasma treatment, irradiating with ultraviolet light does not roughen the surface 106e of the organic insulating layer 106B, thereby not impeding the bonding between the organic insulating layer 106B and the organic insulating layer 206A. Because ultraviolet light irradiation promotes bonding between the organic insulating layer 106B and the organic insulating layer 206A, the heating temperature or heating time when bonding the organic insulating layer 106B and the organic insulating layer 206A can be lowered or shortened compared to conventional methods. For example, the heating temperature when bonding the organic insulating layer 106B and the organic insulating layer 206A together by ultraviolet irradiation can be set to 250° C. or less, which simplifies the bonding process and reduces the influence of heating on the laminate (or the semiconductor device).

[0079] Next, the second member 20 is fabricated in the same manner as the first member 10. To fabricate the second member 20, a seed layer 202 is formed on a support substrate 201 (second support substrate) as shown in FIG. 7A , similar to the first half of the fabrication method for the first member 10. The seed layer 202 serves as a seed for forming electrolytic copper plating, which will be described later, and is formed of, for example, nickel. The support substrate 201 is not particularly limited, but may be, for example, a silicon wafer on which a semiconductor chip or the like is formed. The thickness of the support substrate 201 is not particularly limited, but may be, for example, 0.2 mm to 2.0 mm. The support substrate 201 may be in the form of a wafer or a panel. The size of the support substrate 201 is not particularly limited, but may be, for example, a wafer with a diameter of 200 mm, 300 mm, or 450 mm, or a rectangular panel with a side length of 300 mm to 700 mm. The support substrate 201 corresponds to, for example, the semiconductor chip 21 of the second member 20.

[0080] Next, as shown in FIG. 7B, a photosensitive resist is applied onto the seed layer 202 to form a resist layer 203. Any known material can be used as the photosensitive resist. Thereafter, as shown in FIG. 7C, exposure is performed to form vias 204 in regions corresponding to the wiring electrodes. This results in the formation of vias 204 in which the seed layer 202 is exposed.

[0081] 8A, a wiring electrode 205 (second wiring electrode) is formed on the seed layer 202 in the via 204 by electrolytic copper plating. Thereafter, as shown in FIGS. 8B and 8C, the resist layer 203 is peeled off and removed, and the seed layer 202 in the portion other than the wiring electrode 205 is removed by etching. As a result, the wiring electrode 205 including the seed portion 202a is formed on the support substrate 201. Note that the wiring electrode 205 may be formed in another direction, similar to the wiring electrode 105.

[0082] Next, as shown in FIG. 10A , an insulating layer 206 is formed on the support substrate 201 so that the wiring electrodes 205 are sealed with an organic insulating material (second insulating material) made of a thermosetting resin (second thermosetting resin). At this time, the wiring electrodes 205 may be completely covered with the organic insulating material. During this formation, the organic insulating layer 206 containing the thermosetting resin 206 a may be sealed by forming it in a mold using a compression or transfer molding machine. Alternatively, the organic insulating layer 206 molded into a film shape may be sealed using a roll or pressure laminating molding machine. The sealed support substrate 201 is then heated using an oven, a hot plate, or the like. This forms an organic insulating layer 206 containing a thermosetting resin and inorganic oxide particles on the support substrate 201. This heating may result in the thermosetting resin of the organic insulating layer 206 being completely cured or in an incompletely cured state (e.g., semi-cured, B-stage).

[0083] The thermosetting resin material constituting the organic insulating layer 206 is not particularly limited, but from the viewpoint of high rigidity and embeddability, it is, for example, a sealing material that can be formed in a mold using a compression or transfer molding machine. Alternatively, the material constituting the organic insulating layer 206 may be a sealing material, build-up material, or solder resist material molded into a film. In this case, from the viewpoint of preventing the entrapment of air bubbles, the film-like material may be laminated on the support substrate 201 under reduced pressure.

[0084] The thermosetting resin constituting the organic insulating layer 206 is not particularly limited, and examples thereof include epoxy resin, acrylic resin, methacrylic resin, maleimide resin, phenol resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, etc. Of the above thermosetting resins, the thermosetting resin used for the organic insulating layer 206 is preferably epoxy resin.

[0085] The thermosetting resin may contain a crosslinking agent that crosslinks by heat. Although not particularly limited, known crosslinking agents can be used, such as epoxy compounds, isocyanate compounds, phenolic resins, phenoxy resins, unsaturated polyester resins, alkyd resins, urethane resins, melamine resins, urea resins, guanamine resins, polyimide resins, polyamide resins, vinyl ester resins, and diallyl phthalate resins, and two or more of these may be used in combination.

[0086] As described above, the organic insulating material forming organic insulating layer 206 preferably contains substantially no inorganic oxide particles, but may contain inorganic oxide particles in a content less than that of inorganic oxide particles 106b contained in organic insulating layer 106. In this case, the content of inorganic oxide particles in the organic insulating material forming organic insulating layer 206 may be one-fifth or less of the content of inorganic oxide particles 106b contained in the organic insulating material forming organic insulating layer 106. The content of inorganic oxide particles in the organic insulating material forming organic insulating layer 206 may be 5% by volume or less.

[0087] Next, as shown in FIG. 10B , the surface 206c of the organic insulating layer 206 formed on the support substrate 201 is polished to a predetermined thickness. This polishing is performed by chemical mechanical polishing (CMP) using a polishing liquid to polish and planarize the surface 206c of the organic insulating layer 206 containing a thermosetting resin. In this polishing process, the surface 206c of the organic insulating layer 206 containing a thermosetting resin is planarized. This polishing process is performed, for example, by polishing the polished portion (organic insulating layer 206) on the support substrate 201 while supplying a polishing liquid 212 between a polishing pad 211 (abrasive cloth) and the polished portion. Various polishing liquids can be used for CMP. CMP polishing liquids are classified according to the type of abrasive grains (abrasive particles) they contain, such as cerium oxide (ceria) particles, silicon oxide (silica) particles, aluminum oxide (alumina) particles, or organic resin particles. From the viewpoint of polishing speed, for example, ceria-based particles are used as the abrasive grains.

[0088] By such polishing, the surface 205a of the wiring electrode 205 is exposed from the surface 206d of the organic insulating layer 206A. The surface 206d of the organic insulating layer 206A may be polished to have an arithmetic mean roughness Ra of 50 nm or less. By having the arithmetic mean roughness Ra of the surface 206d of the organic insulating layer 206A be 50 nm or less, it is possible to prevent voids from forming at the adhesive interface between the organic insulating layers due to wear of the surface 206d of the organic insulating layer 206A, thereby ensuring more reliable adhesion between the organic insulating layers described below. The arithmetic mean roughness Ra of the polished organic insulating layer 206A is only required to be 50 nm or less, and polishing or grinding may be performed by a method other than CMP. For example, grinding by a flycut method is applicable. A combination of the flycut method and etching may also be used. In the production of the second member 20, if inorganic oxide particles are not contained, the grinding step in the production of the first member 10 does not need to be performed, but if inorganic oxide particles are contained, a similar grinding step may be performed.

[0089] The thickness of the organic insulating layer 206A after the polishing process described above is, for example, 1 μm to 300 μm. By making the thickness of the organic insulating layer 206A 1 μm or more, it is possible to increase yield without excessive grinding of the embedded wiring and electrodes. By making the thickness of the organic insulating layer 206A 300 μm or less, it is possible to suppress warping of the entire substrate and prevent voids from occurring at the contact interface during the compression bonding process described below, which would prevent compression bonding from being impossible. In this way, the second member 20 is formed.

[0090] As shown in FIG. 11B, a plasma (O ２Alternatively, Ar or ultraviolet (UV) light may be irradiated. When irradiated with ultraviolet light, the surface of the resin material constituting the organic insulating layer 206A reacts with ozone generated by the ultraviolet light irradiation, increasing surface free energy and generating highly reactive functional groups on the surface 206d of the organic insulating layer 206A. This causes the cured product of the thermosetting resin constituting the organic insulating layer 206A to return to a state similar to that before curing. This increases the bonding strength when bonding the organic insulating layer 206A to the organic insulating layer 106B. Unlike plasma treatment, ultraviolet light irradiation does not roughen the surface 206d of the organic insulating layer 206A, thereby not impeding the bonding between the organic insulating layer 106B and the organic insulating layer 206A. Because ultraviolet light irradiation promotes bonding between the organic insulating layer 106B and the organic insulating layer 206A, the heating temperature or heating time when bonding the organic insulating layer 106B and the organic insulating layer 206A can be lowered or shortened compared to conventional methods. This simplifies the bonding process and reduces the effect of heating on the laminate (or the semiconductor device or semiconductor chip). Since the organic insulating layer 206A does not contain inorganic oxide particles or contains only a trace amount of inorganic oxide particles, the effect of surface modification by ultraviolet irradiation can be made greater than that of the organic insulating layer 106A.

[0091] Next, after the first member 10 and the second member 20 are prepared, the surfaces of which have been planarized in the polishing process, the surface 106e of the organic insulating layer 106B of the first member 10 and the surface 206d of the organic insulating layer 206A of the second member 20 are bonded together by applying heat and pressure (compression bonding), as shown in Figure 12(a). This bonding may be performed under a nitrogen atmosphere. By keeping the oxygen concentration during this compression bonding at 1000 ppm or less, oxidation of the surfaces of the wiring electrodes 105, 205, the thermosetting resin, and the inorganic oxide particles exposed by the polishing process can be prevented, thereby reducing adhesion failure.

[0092] In this bonding process, the heating temperature during pressure bonding of the planarized organic insulating layers 106B and 206A is, for example, 200°C to 400°C. A heating temperature of 200°C or higher during pressure bonding prevents insufficient melting of the resin and poor adhesion between the wiring layers, thereby increasing the bonding strength between the organic insulating layers 106B and 206A. A heating temperature of 400°C or lower during pressure bonding prevents decomposition of the thermosetting resin in the organic insulating layers 106B and 206A, thereby ensuring more reliable adhesion between the thermosetting resins. If the surfaces 106e and 206d of the organic insulating layers 106B and 206A are modified by ultraviolet irradiation after the polishing process, the heating temperature and heating time during bonding can be shortened. In this case, the heating temperature during pressure bonding of the planarized organic insulating layers 106A and 206A can be, for example, 300°C or lower. The heating time can be within 15 minutes.

[0093] In this bonding process, the applied pressure when compressing the organic insulating layers 106B and 206A planarized in the polishing process is, for example, 5.0 MPa to 100 MPa. By applying a pressure of 5.0 MPa or more, the organic insulating layers 106B and 206A planarized by CMP can be brought into sufficient contact with each other even if they are affected by warping or other factors, and sufficient adhesive strength can be obtained. By applying a pressure of 100 MPa or less, damage to the substrates planarized by CMP can be prevented.

[0094] In this bonding process, additional heating may be performed in a nitrogen atmosphere after compression bonding, if necessary. The heating temperature after compression bonding is, for example, 250°C to 400°C, and the heating time after compression bonding is, for example, 30 minutes to 180 minutes. By heating at a temperature of 250°C or higher, the embedded wiring electrodes 105, 205 can be firmly bonded to each other by metal bonding. By setting the heating temperature to 400°C or lower, it is possible to prevent the resin components of the organic insulating layers 106B, 206A from being decomposed by heat. This additional heating or heating during compression bonding completely hardens the thermosetting resin in the organic insulating layers 106B, 206A. As a result of the above, for example, the laminate 1 and the laminate 1A are produced.

[0095] The materials constituting the thermosetting resins of the organic insulating layers 106B and 206A bonded in the above-mentioned bonding step may be the same, and if they are the same, the adhesive strength when bonding the organic insulating layers 106B and 206A can be easily increased. On the other hand, the thermosetting resins constituting the organic insulating layers 106B and 206A bonded in the above-mentioned bonding step may be different from each other.

[0096] The effects of the laminate fabrication method according to this embodiment will now be described with reference to FIGS. 13 to 15. FIG. 13(a) is a cross-sectional view showing a laminate fabricated by another fabrication method, and FIG. 13(b) is a cross-sectional view showing a laminate fabricated by the fabrication method according to this embodiment. In FIG. 13(a), both insulating layers 106B to be joined together contain the same amount of inorganic oxide particles 106b. FIGS. 14(a) to 14(c) are diagrams showing another laminate fabrication method and the effects of thermal expansion on a laminate fabricated by that fabrication method. FIGS. 15(a) and 15(b) are diagrams showing the embedding of foreign matter by the fabrication method according to this embodiment.

[0097] First, the bonding strength will be described with reference to FIG. 13 . As shown in FIG. 13A , if both insulating layers 106B to be bonded contain the same amount of inorganic oxide particles 106b, the thermal expansion coefficient of the thermosetting resin 106a can be reduced, but the bonding area of ​​the resin portion, such as the thermosetting resin, is likely to be reduced across the entire laminate 1. That is, the area where the resin portion of one organic insulating layer contacts the cross-sectional portion of the inorganic oxide particles in the other organic insulating layer inevitably increases, thereby reducing the bonding area between the resin portion of one organic insulating layer and the resin portion of the other organic insulating layer. For this reason, in the embodiment shown in FIG. 13A , it may be difficult to further improve the bonding strength of the laminate 1. On the other hand, in the embodiment shown in FIG. 13B , one organic insulating layer 206A does not contain inorganic oxide particles (or contains only a small amount of inorganic oxide particles). Therefore, the area where the resin portion of one organic insulating layer 206A and the resin portion of the other organic insulating layer 106B are bonded can be made relatively large, thereby increasing the bonding strength between the organic insulating layers 106B and 206A according to the manufacturing method of this embodiment.

[0098] For example, as shown in FIG. 16 , when a laminate was fabricated using another fabrication method shown in FIG. 13 (a) (Experimental Example 1), the shear strength was 5 MPa or less, whereas when a laminate was fabricated using the fabrication method according to the present embodiment shown in FIG. 13 (b) (Experimental Example 2), the shear strength was 15 MPa or more. Experimental Example 3 shows the shear strength when organic insulating layers not containing inorganic oxide particles are bonded together. However, it was confirmed that the fabrication method according to the present embodiment (Experimental Example 2) can achieve a bonding strength comparable to that of Experimental Example 3. In Experimental Example 2, the organic insulating layers 106B and 206A were irradiated with ultraviolet light (see FIG. 11 ). Note that the shear strength when inorganic insulating layers (silicon substrates) are bonded together is, for example, approximately 15 MPa, and it was confirmed that the present embodiment can achieve a bonding strength equivalent to that of Experimental Example 3.

[0099] Next, the reduction in the thermal expansion coefficient will be described with reference to FIG. 14 . In the case of a laminate 401 formed on a support substrate 402 in which none of the organic insulating layers 406 contain inorganic oxide microparticles, as shown in FIGS. 14A and 14B, the thermal expansion coefficient of the organic insulating material or its cured product constituting the organic insulating layer 406 differs significantly from the thermal expansion coefficient of the wiring electrode 405, as shown in FIG. 14C. That is, in the laminate 401, the thermal expansion coefficient of the organic insulating material or its cured product constituting the organic insulating layer 406 is large, while the thermal expansion coefficient of the wiring electrode 405 (e.g., copper) is small. For this reason, when the laminate 401 generates heat or is heated during the manufacturing process, the expansion of the wiring electrode 405 cannot keep up with the expansion of the organic insulating material, resulting in poor adhesion at the interface between the wiring electrodes 405 or misalignment of the organic insulating layer 406 during manufacturing. In contrast, in the method for producing the laminate 1, 1A according to this embodiment, inorganic oxide particles are contained in one of the insulating layers, thereby reducing the thermal expansion coefficient of at least one of the insulating layers. Therefore, when the laminate 1, 1A generates heat or is heated during the production process, it is possible to prevent the expansion of the wiring electrodes 14, 23, 34, 105, 205 from keeping up with the expansion of the organic insulating material, resulting in poor adhesion at the interfaces between the wiring electrodes 14, 23, etc., or misalignment of the organic insulating layer during production.

[0100] As shown in Figure 13(a), if inorganic oxide particles are contained in both organic insulating layers, the softness of the organic insulating layers in the laminate is reduced, making it difficult to embed foreign matter D or the like through the organic insulating layers. In contrast, according to the method for producing a laminate of this embodiment, the other insulating layer does not contain inorganic oxide particles, or contains only a small amount of inorganic oxide, resulting in a lower elastic modulus (e.g., 10 GPa or less) than one insulating layer. Therefore, even if dust or the like is generated when producing the laminates 1 and 1A by bonding, the organic insulating layer containing no inorganic oxide can more reliably contain such foreign matter. This makes it possible to reduce connection failures caused by foreign matter or the like.

[0101] As described above, according to the method for fabricating a laminate of this embodiment, the organic insulating layer 106B contains the thermosetting resin 106a and the inorganic oxide particles 106b, while the organic insulating layer 206A contains the thermosetting resin 206a but does not contain inorganic oxide particles, or contains fewer inorganic oxide particles than the organic insulating layer 106B. These organic insulating layers 106B and 206A are bonded together. In this case, the inorganic oxide particles 106b contained in the organic insulating layer 106B suppress the thermal expansion coefficient of the organic insulating layer 106B. On the other hand, since the organic insulating layer 206A contains no or fewer inorganic oxide particles, the organic insulating layer 206A can embed debris, suppress surface irregularities, and improve the bonding strength between the insulating layers. As described above, this method for fabricating a laminate makes it possible to increase the adhesive strength between the insulating layers while suppressing misalignment when bonding the insulating layers together.

[0102] In the method for producing a laminate according to this embodiment, the content of inorganic oxide particles in the organic insulating material constituting organic insulating layer 206A may be equal to or less than one-fifth the content of inorganic oxide particles 106b contained in the organic insulating material constituting organic insulating layer 106B. In this case, organic insulating layer 206A can further bury debris, suppress surface irregularities, and improve the bonding strength between insulating layers.

[0103] In the method for producing a laminate according to this embodiment, the content of inorganic oxide particles in the organic insulating material constituting organic insulating layer 206A may be 5% by volume or less, which can further bury debris, suppress surface irregularities, and improve the bonding strength between insulating layers.

[0104] In the method for producing a laminate according to this embodiment, it is preferable that the organic insulating material constituting the organic insulating layer 206A is substantially free of inorganic oxide particles, which can more reliably bury debris, suppress surface irregularities, and improve the bonding strength between insulating layers.

[0105] In the laminate fabrication method according to this embodiment, the organic insulating material for the organic insulating layer 106B, including the thermosetting resin 106a and the inorganic oxide particles 106b, is preferably adjusted to have a smaller thermal expansion coefficient than the organic insulating material constituting the organic insulating layer 206A. In this case, the thermal expansion coefficient of the organic insulating layer 106B can be reduced, thereby suppressing misalignment due to thermal expansion. This allows for a laminate with high bonding accuracy. Furthermore, when wiring such as copper (Cu) is provided in the laminate, the expansion of the insulating material, including the thermosetting resin, may be greater than the expansion of the wiring, resulting in poor bonding between the wiring and the insulating layer. However, according to this fabrication method, by lowering the thermal expansion coefficient of the insulating material for the organic insulating layer 106, the difference in thermal expansion between the insulating material and the wiring is reduced, thereby preventing poor bonding between the wiring.

[0106] In the method for producing a laminate according to this embodiment, the organic insulating material for the organic insulating layer 106B, which contains the thermosetting resin 106a and the inorganic oxide particles 106b, has a thermal expansion coefficient of 40×10 －６ / K or less. In this case, the thermal expansion coefficient of the organic insulating layer 106B can be reduced, thereby suppressing misalignment due to thermal expansion. This allows a laminate with high bonding accuracy to be obtained. Furthermore, when wiring such as copper (Cu) is provided in the laminate, the expansion of the insulating material containing a thermosetting resin or the like may be greater than the expansion of the wiring, which may result in poor bonding between the wiring and the insulating layer, as the wiring cannot keep up with the expansion of the insulating layer. However, according to this manufacturing method, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring can be reduced, making it possible to suppress poor bonding between the wiring.

[0107] In the laminate fabrication method according to this embodiment, the content of inorganic oxide particles 106b in the insulating material for organic insulating layer 106B, which contains thermosetting resin 106a and inorganic oxide particles 106b, is preferably 15% to 70% by volume. In this case, the inclusion of inorganic oxide particles can reduce the thermal expansion coefficient of organic insulating layer 106B, thereby suppressing misalignment due to thermal expansion. This allows for a laminate with high bonding accuracy. Furthermore, when wiring such as copper (Cu) is provided in the laminate, the expansion of the insulating material, including thermosetting resin, can sometimes be greater than the expansion of the wiring, resulting in poor bonding between the wiring and the insulating layer, as the wiring cannot keep up with the expansion of the insulating layer. However, according to this fabrication method, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring can be reduced, thereby suppressing poor bonding between the wiring.

[0108] The method for fabricating a laminate according to this embodiment further includes a step of polishing and planarizing the surfaces 106d and 106e of the organic insulating layers 106 and 106A. In the step of polishing the organic insulating layers 106 and 106A, the insulating layers may be polished so that the arithmetic mean roughness of the surfaces 106d and 106e is 50 nm or less. In some cases, the insulating layer may contain inorganic oxide particles, which can increase its surface roughness. However, in this fabrication method, one of the organic insulating layers is planarized by polishing or the like before bonding. This allows for more reliable improvement in the accuracy and adhesive strength when bonding the organic insulating layer 106B to the organic insulating layer 206A. As a result, it allows for more reliable improvement in the accuracy and adhesive strength when bonding the organic insulating layer 106B and the organic insulating layer 206A.

[0109] In the method for manufacturing a laminate according to this embodiment, the support substrate 101 may include an inorganic interposer made of an inorganic material or an organic interposer made of an organic material containing inorganic oxide particles. In this case, by reducing the thermal expansion coefficient of the insulating layer on the interposer side, the difference in the thermal expansion coefficients between the insulating layer and the interposer can be reduced, thereby eliminating problems during package assembly in the interposer, such as warping, cracks, mounting defects, terminal connection defects, insulating layer formation defects, and interface peeling. Furthermore, by reducing the thermal expansion coefficient of the insulating layer on the interposer side, the difference in the thermal expansion coefficients between the insulating layer and the interposer can be reduced, thereby eliminating problems in the laminate (or semiconductor device), such as wiring deformation, connection breakdown, material peeling, wiring shorts, and material failure.

[0110] In the method for producing a laminate according to this embodiment, a semiconductor chip may be attached to the surface opposite to the surface 206d of the organic insulating layer 206A. In this case, the insulating layer on the semiconductor chip side contains no inorganic oxide particles or only a small amount of inorganic oxide particles, which can prevent the particles from adhering to the semiconductor chip and causing connection defects and the like.

[0111] The method for producing a laminate according to this embodiment may further include the steps of polishing and planarizing surfaces 106d and 106e of organic insulating layers 106 and 106A, forming an organic insulating layer 206 containing a thermosetting resin 206a on a support substrate 201, and polishing and planarizing surface 206c of organic insulating layer 206. In the bonding step, planarized surface 106e and planarized surface 206d may be bonded together. When inorganic oxide particles are contained in an insulating layer, the surface roughness may increase. However, in this fabrication method, the organic insulating layer is planarized by polishing or the like before bonding. This can further increase the bonding strength between organic insulating layer 106B and organic insulating layer 206A.

[0112] The laminate fabrication method according to this embodiment preferably further includes a step of irradiating the surface 206d of the organic insulating layer 206A with ultraviolet light. In this case, the surface of the resin material constituting the organic insulating layer 206A reacts with ozone generated by the ultraviolet light irradiation, increasing the surface free energy and generating highly reactive functional groups on the surface 206d of the organic insulating layer 206A. In other words, the cured product of the thermosetting resin constituting the organic insulating layer 206A becomes similar to its pre-cured state. This further enhances the bonding strength between the organic insulating layer 106B and the organic insulating layer 206A. Unlike plasma treatment, ultraviolet light irradiation does not roughen the surface 206d of the organic insulating layer 206A, and therefore does not impair the bonding between the organic insulating layer 106B and the organic insulating layer 206A. However, surface treatment using plasma treatment may also be performed. In this manufacturing method, as described above, the ultraviolet irradiation promotes bonding between the organic insulating layer 106B and the organic insulating layer 206A, so that the heating temperature when bonding the organic insulating layer 106B and the organic insulating layer 206A can be lowered or the heating time can be shortened compared to conventional methods, thereby simplifying the bonding process and suppressing the effects of heating on the laminate (or semiconductor device).

[0113] In the method for manufacturing a laminate according to this embodiment, in the step of bonding the organic insulating layer 106B and the organic insulating layer 206A together, the organic insulating layer 106B and the organic insulating layer 206A may be bonded together by heating them at a temperature of 300° C. or less. In this case, the influence of heating on the laminate (or the semiconductor device) can be suppressed.

[0114] The method for producing a laminate according to this embodiment may further include a step of forming wiring electrodes 105 on the support substrate 101. In the step of forming the organic insulating layer 106, the wiring electrodes 105 may be sealed with an insulating material containing thermosetting resin 106 a and inorganic oxide particles 106 b. This protects the wiring electrodes 105 with this insulating material.

[0115] The method for producing a laminate according to this embodiment may further include a step of forming wiring electrodes 205 on a support substrate 201, and a step of forming an organic insulating layer 206 on the support substrate 201 so as to seal the wiring electrodes 205 with an insulating material containing a thermosetting resin 206a. In the bonding step, when bonding the surface 106e of the organic insulating layer 106B to the surface 106d of the organic insulating layer 206A, the connection terminal of the wiring electrode 105 may be bonded to the connection terminal of the wiring electrode 205. In this case, the two connection terminals can be bonded more reliably.

[0116] Although the embodiments of the present disclosure have been described above, the present invention is not limited to the above-described embodiments and may be modified as appropriate without departing from the spirit of the present disclosure. For example, in the embodiment of the laminate fabrication method described above, the organic insulating layers 106, 106B contain inorganic oxide particles 106b, and the organic insulating layers 206, 206A contain no inorganic oxide particles or a trace amount of inorganic oxide particles. However, the inorganic oxide particle content may be reversed. In this case, the same effects can be achieved.

[0117] 1, 1A... laminate, 10, 30... first member, 20... second member, 11... interposer substrate, 13, 22, 33, 106, 106B, 206, 206A... insulating layer, 14, 23, 34, 105, 205... wiring electrode, 21... semiconductor chip, 13a, 22a, 33a... cured product, 13b, 22b, 33b, 106b... inorganic oxide particles, 101, 201... supporting substrate, 106a, 206a... thermosetting resin, 112, 212... polishing liquid, 120, 220... irradiator.

Claims

1. Forming a first insulating layer containing a first thermosetting resin and first inorganic oxide particles on a first support substrate; Bonding a first surface of the first insulating layer and a second surface of a second insulating layer containing a second thermosetting resin; A method for manufacturing a laminate, wherein the second insulating layer substantially does not contain inorganic oxide particles or contains second inorganic oxide particles having a content less than that of the first inorganic oxide particles contained in the first insulating layer.

2. The content of the second inorganic oxide particles in the second insulating material constituting the second insulating layer is 1 / 5 or less of the content of the first inorganic oxide particles contained in the first insulating material constituting the first insulating layer. The method for manufacturing a laminate according to Claim 1.

3. The content of the second inorganic oxide particles in the second insulating material constituting the second insulating layer is 5% by volume or less. The method for manufacturing a laminate according to Claim 1 or 2.

4. The second insulating material constituting the second insulating layer substantially does not contain inorganic oxide particles. The method for manufacturing a laminate according to Claim 1.

5. The first insulating material containing the first thermosetting resin and the first inorganic oxide particles is adjusted to have a coefficient of thermal expansion smaller than that of the second insulating material constituting the second insulating layer. The method for manufacturing a laminate according to Claim 1 or 2.

6. The first insulating material containing the first thermosetting resin and the first inorganic oxide particles is adjusted so that the coefficient of thermal expansion is 40×10 －６ / K or less. The method for manufacturing a laminate according to Claim 1 or 2.

7. The content of the first inorganic oxide particles in the first insulating material containing the first thermosetting resin and the first inorganic oxide particles is 15% by volume to 70% by volume. The method for manufacturing a laminate according to Claim 1 or 2.

8. Further comprising a step of planarizing the first surface of the first insulating layer; In the step of planarizing the first insulating layer, the first insulating layer is polished so that the arithmetic mean roughness of the first surface is 50 nm or less. The method for manufacturing a laminate according to Claim 1 or 2.

9. The first support substrate includes an inorganic interposer made of an inorganic material or an organic interposer made of an organic material containing inorganic oxide particles. The method for manufacturing a laminate according to Claim 1 or 2.

10. A semiconductor chip is attached to a surface of the second insulating layer opposite to the second surface. The method for manufacturing a laminate according to Claim 1 or 2.

11. A step of planarizing the first surface of the first insulating layer; A step of forming the second insulating layer containing the second thermosetting resin on a second support substrate; A step of planarizing the second surface of the second insulating layer; further comprising; In the bonding step, the planarized first surface and the planarized second surface are bonded together. The method for producing a laminate according to claim 1 or 2.

12. further comprising a step of irradiating ultraviolet rays onto the second surface of the second insulating layer; The method for producing a laminate according to claim 1 or 2.

13. In the step of bonding the first surface and the second surface, the first insulating layer and the second insulating layer are heated and bonded at 250°C or lower. The method for producing a laminate according to claim 1 or 2.

14. further comprising a step of forming a first wiring electrode on the first support substrate; In the step of forming the first insulating layer, the first wiring electrode is sealed with a first insulating material containing the first thermosetting resin and the first inorganic oxide particles. The method for producing a laminate according to claim 1 or 2.

15. A step of forming a second wiring electrode on a second support substrate; a step of forming the second insulating layer on the second support substrate so as to seal the second wiring electrode with a second insulating material containing the second thermosetting resin; further comprising, In the bonding step, when bonding the first surface of the first insulating layer and the second surface of the second insulating layer, the connection terminal of the first wiring electrode and the connection terminal of the second wiring electrode are joined. The method for producing a laminate according to claim 14.

16. A step of forming a first insulating layer on a first support substrate using an insulating material containing a first thermosetting resin and first inorganic oxide particles; a step of bonding the first surface of the first insulating layer and the second surface of a second insulating layer containing a second thermosetting resin; comprising, The insulating material used in the method for producing a laminate, wherein the second insulating layer substantially does not contain inorganic oxide particles or contains a second inorganic oxide particle having a content less than that of the first inorganic oxide particles contained in the first insulating layer.

17. The insulating material is adjusted so that the linear expansion coefficient is 40×10 －６ / K or less. The insulating material according to claim 16.

18. The content of the first inorganic oxide particles in the insulating material is 15% to 70% by volume. The insulating material according to claim 16 or 17.

19. A step of forming a first insulating layer containing a first thermosetting resin and first inorganic oxide particles on a first support substrate; A step of bonding a first surface of the first insulating layer and a second surface of a second insulating layer formed of an insulating material containing a second thermosetting resin; and An insulating material used in a method for manufacturing a laminate, wherein the second insulating layer substantially does not contain inorganic oxide particles or contains second inorganic oxide particles in a content less than that of the first inorganic oxide particles contained in the first insulating layer.

20. When heated to at least 300 ° C, the insulating material has a lower elastic modulus than the material constituting the first insulating layer. The insulating material according to claim 19.

21. The content of the second inorganic oxide particles in the insulating material is 5% by volume or less. The insulating material according to claim 19 or 20.

22. A first support substrate; A first insulating layer including a cured product of a first thermosetting resin and first inorganic oxide particles, the first insulating layer being formed on the first support substrate; A second insulating layer including a cured product of a second thermosetting resin, the second insulating layer being bonded to the first insulating layer; and A laminate, wherein the second insulating layer substantially does not contain inorganic oxide particles or contains second inorganic oxide particles in a content less than that of the first inorganic oxide particles contained in the first insulating layer.

23. The content of the second inorganic oxide particles in the second insulating layer is 5% by volume or less. The laminate according to claim 22.

24. Further comprising a semiconductor chip disposed on a surface of the second insulating layer opposite to the surface bonded to the first insulating layer. The laminate according to claim 22 or 23.

25. The content of the first inorganic oxide particles in the first insulating layer is 15% by volume to 70% by volume. The laminate according to claim 22 or 23.

26. A first wiring electrode at least partially disposed in the first insulating layer and having a connection terminal exposed from a first surface of the first insulating layer bonded to the second insulating layer; A second wiring electrode at least partially disposed in the second insulating layer and having a connection terminal exposed from a second surface of the second insulating layer bonded to the first insulating layer; and The connection terminal of the first wiring electrode and the connection terminal of the second wiring electrode are joined. The laminate according to claim 22 or 23.