Measurement method and charged particle beam device

Abstract

The purpose of the present invention is to provide a measurement technology that can suppress the influence of drifting of a probe position without using position information of a probe. A measurement method according to the present invention involves: measuring, by means of a charged particle beam device, displacement of a probe occurring under a temperature condition for observing a sample using the charged particle beam device; and identifying, by using the measuring result, a movement amount for moving the probe in order to cancel the displacement (see FIG. 2).

Description

Measurement method, charged particle beam device

[0001] The present invention relates to a method for measuring electrical characteristics by bringing a probe into contact with a sample.

[0002] A scanning electron microscope (SEM) is a device that observes a sample by irradiating it with a beam of charged particles (e.g., an electron beam). Furthermore, devices equipped with a probe that contacts the sample to measure its electrical properties are called SEM nanoprobers. In such devices, it is necessary to correct the effects of drift, which is the deviation of the probe position (especially the vertical position).

[0003] The following Patent Document 1 describes an inspection device equipped with a probe that contacts a sample. The document describes the following technology (see claim 5): "The inspection device according to claim 1 or 2 includes a Z sensor that measures the height of the sample placed on the sample stage and a temperature sensor that measures the temperature of the sample, and is characterized in that changes in the height of the sample due to changes in the temperature of the sample are cancelled out by moving the probe by the sample stage or the probe unit."

[0004] JP 2008-157650 A

[0005] Installing a position sensor in the sample chamber or modifying the probe unit design to include a position sensor to obtain probe position information can degrade the image quality of the sample. This is because the placement of the position sensor increases the area of ​​the object blocking the charged particle beam irradiated onto the sample for sample observation. This makes probing (contacting the probe with the sample) particularly difficult during high-magnification observation.

[0006] Therefore, it would be useful if probe drift could be corrected without using information about the current position of the probe. However, conventional techniques such as those disclosed in Patent Document 1 are based on the premise that probe position information is measured by a Z sensor, making it difficult to meet this need.

[0007] The present invention has been made in consideration of the above-mentioned problems, and aims to provide a measurement technique that can suppress the influence of probe position drift without using probe position information.

[0008] The measurement method of the present invention measures the displacement of a probe that occurs under temperature conditions when observing a sample using a charged particle beam device using the charged particle beam device, and uses the measurement results to identify the amount of movement of the probe to offset the displacement.

[0009] According to the measurement method of the present invention, the influence of the drift of the probe position can be suppressed without using the position information of the probe. Problems, configurations, effects, etc. other than those described above will become clear from the description of the following embodiments.

[0010] 1 shows an overall configuration diagram of a charged particle beam device 100. FIG. 2 is a flowchart illustrating a procedure for calculating a correction value for correcting drift of a probe 15. FIG. 3 is a flowchart illustrating a procedure for measuring electrical characteristics of a sample. FIG. 4 is an example of a screen of a user interface provided by a control computer 23 in S205.

[0011] <Embodiment 1> In embodiment 1 of the present invention, an example configuration will be described in which, in a nanoprober (charged particle beam device) for evaluating the electrical characteristics of a sample, the amount of drift that becomes a problem when the probe is brought into contact with the sample and then the contact is maintained for a long period of time is observed using an SEM image.

[0012] FIG. 1 shows the overall configuration of a charged particle beam device 100 according to the first embodiment. The electron gun 10 forms an irradiation optical system for irradiating and scanning a sample 27 with a primary electron beam 12. Therefore, the electron gun 10 includes all components necessary for electron irradiation, such as an electron source that generates an electron beam and a deflector lens for scanning the beam. A partition wall 11 of the vacuum chamber separates an atmospheric pressure region from a vacuum region within the vacuum chamber. The operation of the electron gun 10, such as the electron beam extraction voltage of the electron source and the voltage applied to the deflector lens, is controlled by an electron gun controller 25. Secondary electrons 14 generated from the sample 27 upon irradiation with the primary electron beam 12 are detected by a secondary electron detector 13. The sensor portion of the secondary electron detector 13 that actually detects electrons is located within the partition wall 11, but the base portion to which wiring for power supply connection and the like is connected protrudes outside the partition wall 11. A control computer 23 creates an observation image based on the detection results of the secondary electrons 14. The observed image can be viewed on the operator operating means 26 .

[0013] The probe 15 is held by a probe holder 16 and contacts a predetermined region of the sample to be inspected. The probe unit 17 is a device for moving the probe holder 16 to a desired position, and moves the probe 15 together with the probe holder 16 to the desired position. The probe unit 17 is equipped with drive means in the xy directions (in-plane) and z directions (vertical). A camera 28 installed above and a camera 29 installed laterally can observe the probe 15. Observation by each camera is mainly used for coarse adjustment of the probe position. Fine adjustment and the operation at the moment of contact with the sample can be performed by an operator while observing the SEM image of the probe 15 on the operator operation means 26, or the control computer 23 can automatically control the operation.

[0014] A sample 27, which is actually the target of defect inspection, is held on a sample stage 18. The sample stage 18 is further held by a sample stage drive unit 19, and the sample stage 18 and sample stage drive unit 19 together are referred to as a DUT (Device Under Test) stage. The DUT stage and probe unit 17 are formed on a large sample stage 20. The large sample stage 20 is equipped with drive means in the x- and y-directions (in-plane) and z-direction (vertical). The large sample stage 20 is installed on a base 21 and moved in the x- and y-directions (in-plane) and z-direction (vertical) by the drive means. This makes it possible to change the relative position between the primary electron beam 12 and the sample 27 without changing the relative position between the DUT stage and the probe unit 17.

[0015] The electron gun controller 25, secondary electron detector 13, probe unit 17, DUT stage, and large sample stage 20 are controlled by a control computer 23. The sample stage 18 and probe holder 16 are connected to an electrical characteristic measuring instrument 22. The probe 15 and probe holder 16 detect electrical signals by contacting the sample 27, and are therefore electrically floating with respect to anything other than the electrical characteristic measuring instrument 22. The electrical characteristic measuring instrument 22 mainly measures the current-voltage characteristics of the sample 27 detected by the probe 15, and calculates desired electrical characteristic values ​​therefrom, such as the resistance, current, and voltage values ​​at the contact points of the probe 15.

[0016] The characteristic values ​​measured by the electrical characteristic measuring instrument 22 are transmitted to the control computer 23 via a transmission line. The control computer 23 performs further advanced analysis based on the transmitted information. For example, it analyzes the measured values ​​to determine whether the measurement location is defective or normal. The control computer 23 is equipped with a storage unit 24, such as an optical disk, hard disk, or memory, which can store the measured electrical characteristics. The control computer 23 also plays a role in controlling the overall operation of the charged particle beam device 100. The control computer 23 is equipped with the storage unit 24 for storing software that controls each connected component, and input means through which the device user inputs various setting parameters for the device. Examples of input means include an image display means for displaying the operation screen and SEM images, a keyboard, and a mouse for moving a pointer on the operation screen.

[0017] The large sample stage 20 is provided with a heating means 30, and the partition wall 11 is provided with a cooling means 31. The heating means 30 and the cooling means 31 are connected to the control computer 23, and their operations are controlled by the control computer 23.

[0018] 2 is a flowchart explaining the procedure for calculating a correction value for correcting the drift of the probe 15. This flowchart can be used in all cases: (a) when the sample is measured at room temperature without being heated or cooled, (b) when the sample is measured after being heated, and (c) when the sample is measured after being cooled. The differences between these cases will be explained later.

[0019] (FIG. 2: Step S101) When the charged particle beam device 100 is started up, the charged particle beam device 100 enters a state of waiting for the magnification setting of the SEM image, and a magnification setting input means is displayed on a display screen associated with the control computer 23. The magnification setting input means is, for example, an input means using an icon or a GUI (Graphical User Interface). The user inputs the SEM magnification using the input means. The control computer 23 adjusts the conditions of the electron gun 10 based on the input value, acquires an SEM image at the input magnification, and displays it on the operator operation means 26. The user visually confirms whether the target measurement position of the sample is included in the acquired SEM image. If not, the user drives the large sample stage 20 to move the sample holder 18 into the field of view of the SEM image. The DUT stage itself, rather than the large sample stage 20, may be moved to move the inspection location into the field of view of the SEM image. Although it depends on the size of the inspection point, increasing the magnification of the SEM displays an enlarged image of the inspection point, allowing the user to carry out probing of the inspection point of the sample.

[0020] (FIG. 2: Steps S102-S103) The user instructs the control computer 23 whether or not to evaluate the temperature characteristics of the sample. If the temperature characteristics are to be evaluated (S102: YES), the heating means 30 or cooling means 31 heats or cools the sample chamber to the desired temperature (S103). If temperature adjustment is not required (S102: NO, i.e., measurement is to be performed at room temperature), the process skips to S104.

[0021] (FIG. 2: Step S104) The user operates the operator operation means 26 to bring the probe 15 into contact with the inspection location. This operation may be performed manually by the user, or may be performed automatically by the control computer 23 according to a predetermined movement amount. In this step, the probe 15 is moved onto the inspection location, and the probe 15 is brought into contact with the inspection location by moving the probe 15 downward in the Z-axis direction.

[0022] (FIG. 2: Step S105) When the probe 15 comes into contact with the inspection location, this step and subsequent steps are started. After the probe 15 comes into contact with the sample 27, the control computer 23 generates SEM images of the probe 15 at predetermined time intervals and analyzes these images to calculate the amount of drift (amount of displacement) of the tip of the probe 15 at predetermined time intervals. The control computer 23 stores the amount of displacement at each time interval in the memory unit 24.

[0023] (FIG. 2: Step S106) Based on the drift amount calculated in S105, the control computer 23 calculates the amount of correction to be applied to the probe 15 while measuring the electrical characteristics of the sample 27 (S106). A specific example of the calculation procedure will be described later. The control computer 23 stores the calculated correction value in the memory unit 24.

[0024] (Figure 2: Steps S105 to S106: Supplement) The length of time for performing S105 to S106 (synonymous with the measurement time T described below) may be specified by the user on the screen of S101, for example, or may be automatically determined by the control computer 23 depending on the type of sample to be observed, etc.

[0025] The procedure for calculating the correction value (during room temperature measurement) in S106 will be described. At room temperature, the correction is primarily for drift of the probe 15, which occurs due to creep, a potential distortion of the piezoelectric element that serves as the actuator of the probe unit 17. Drift due to creep refers to a phenomenon in which a drift of approximately 10% of the previous movement occurs in the same direction as the previous movement. Drift occurs in the downward Z-axis direction due to contact between the probe 15 and the sample 27 by moving the probe 15 downward (in the direction approaching the sample 27). As a result, pressure is applied to the sample 27 after the sample 27 and the probe 15 come into contact, bending the probe 15. When viewed in the SEM image (from above), a displacement occurs toward the tip of the probe 15. If this drift amount exceeds the range of the inspection location, contact between the probe 15 and the inspection location is lost. The correction value is determined so that the probe tip maintains contact within the range of the inspection location for the measurement time T determined by the user.

[0026] The amount of drift of the probe over a certain time interval of t seconds is denoted by Δp, and the measurement time is denoted by T. After n minutes from when the probe 15 comes into contact with the inspection point, the probe 15 is retracted upward along the Z axis by {Σ(t=1, n)Δp}-a. The correction value a is a correction value used to prevent the probe 15 from losing contact with the sample 27 due to excessive upward retraction of the probe 15. The same value of Δp may be used for each time interval, or an actual measurement value for each time interval measured from the observation image of the probe 15 may be used.

[0027] After (n+1) minutes (i.e., 1 minute after the upward retraction), the probe 15 is advanced downward along the Z axis by 10% (({Σ(t=1,n)Δp}-a)×0.1) of the upward retraction amount at the time point n minutes later. This is based on the principle that drift due to creep occurs in the same direction by about 10% of the immediately preceding movement amount, and is used to re-correct the creep drift that accompanies the upward retraction.

[0028] The correction value a is set in advance within a range that allows the desired measurement accuracy to be maintained, and is stored in advance in the storage unit 24. The correction value a may be changed depending on the size of the area to be inspected and the measurement time. The same applies to the correction values ​​b and c described below.

[0029] The user can specify n within the range of the time length T on the screen in S101 as the timing for performing the correction. The user can also specify the time interval t in the same way. The values ​​of n and t may be different for each probe, or may be common to all probes. This also applies to the following embodiments.

[0030] Second Embodiment In a second embodiment of the present invention, a procedure for determining a drift correction value when measuring after heating the sample 27 will be described. Since the configuration of the charged particle beam device 100 is the same as in the first embodiment, the following mainly describes how to determine the correction value during heating.

[0031] During heating, drift due to mechanical distortion caused by heat is also corrected in addition to drift due to creep at room temperature. Drift due to mechanical distortion caused by heat occurs in the downward Z-axis direction in the probe 15 and in the upward Z-axis direction in the sample stage drive unit 19. Therefore, since strong pressure is applied to the inspection point by the probe 15, the drift of the probe tip during heating occurs to a greater extent than the drift at room temperature. If the amount of this drift exceeds the range of the inspection point, contact between the probe and the inspection point is lost. A correction value is determined so that the probe tip maintains contact within the range of the inspection point for the measurement time T determined by the user.

[0032] The amount of thermal drift of the sample stage driver 19 in the upward direction along the Z axis over a time interval of t seconds is denoted as Δs, and the measurement time is denoted as T. At each time interval of t seconds, the probe tip drifts in the direction of the probe tip by (Δp+Δs). Therefore, after n minutes have elapsed since the probe 15 came into contact with the location to be inspected, the probe 15 is retracted upward by (Δp+Δs-b) at each time interval of t seconds. b is a correction value that prevents the probe from losing contact with the sample 27 due to being retracted beyond its initial position.

[0033] When the sample 27 is heated, creep drift of the actuator also occurs. However, since the thermal drift caused by heating is much larger than the creep drift, the effect of the creep drift can be substantially ignored. Therefore, in this embodiment, re-movement for re-correcting new creep drift caused by retracting the probe 15 upward is not performed. Similarly, re-movement for re-correction is not performed when cooling the sample 27, which will be described later.

[0034] Since the thermal drift caused by heating the sample 27 is larger than the creep drift and its influence is significant, this embodiment differs from the first embodiment in that drift correction is performed every t seconds. However, the correction operation is started when n minutes (which can be specified by the user in S101, etc.) have elapsed since the probe 15 came into contact with the sample 27. This is for the following reason.

[0035] When the probe 15 starts to retract upward, there is also a risk that contact between the probe 15 and the sample 27 will be lost. Therefore, the initial position of the probe 15 is adjusted in advance so that contact will not be lost even if the probe 15 drifts during the first n minutes after contact between the probe 15 and the sample 27. This has the advantage that there is no risk of contact being lost during the first n minutes, making it possible to reliably obtain measurement values ​​using the probe 15. However, it is necessary to set the initial position within a range that ensures sufficient measurement accuracy even if drift occurs during those n minutes. For the same reason, the correction operation is not started until n minutes have elapsed when cooling the sample 27, which will be described later.

[0036] Third Embodiment In a third embodiment of the present invention, a procedure for determining a drift correction value will be described when measuring after cooling the sample 27. Since the configuration of the charged particle beam device 100 is the same as in the first embodiment, the following mainly describes how to determine the correction value when cooled.

[0037] During cooling, drift due to creep at room temperature is corrected, as well as drift due to mechanical distortion caused by cooling. Drift due to mechanical distortion caused by cooling occurs in the upward Z-axis direction in the probe 15, and in the downward Z-axis direction in the sample stage drive unit 19. Therefore, drift occurs in the direction in which the probe 15 moves away from the inspection point. If the amount of this drift exceeds the range of the inspection point, contact between the probe and the inspection point is lost. A correction value is determined so that the probe tip maintains contact within the range of the inspection point for the measurement time T determined by the user.

[0038] The amount of drift of the sample stage driver 19 in the downward direction along the Z axis due to cooling over a time interval of t seconds is denoted as Δs, and the measurement time is denoted as T. At each time interval of t seconds, the probe tip drifts backward by (Δp + Δs). Therefore, after n minutes have elapsed since the probe contacted the location to be inspected, the probe is advanced downward along the Z axis by (Δp + Δs ​​+ c) at each time interval of t seconds (to bring it closer to the sample 27). c is a correction value that prevents the probe from advancing insufficiently and losing contact.

[0039] Fourth Embodiment In a fourth embodiment of the present invention, an example of an operation for actually measuring the electrical characteristics of a sample after determining the correction amount of the probe 15 will be described. The procedure for determining the correction amount is the same as in the first to third embodiments. The configuration of the charged particle beam device 100 is the same as in the first embodiment.

[0040] 3 is a flowchart illustrating the procedure for measuring the electrical characteristics of a sample. Each step in FIG. 3 will be described below.

[0041] (FIG. 3: Steps S201 to S204) When the charged particle beam device 100 is started up, the charged particle beam device 100 enters a state of waiting for the magnification setting of the SEM image, and a means for inputting the magnification setting is displayed on a display screen attached to the control computer 23 (S201). The temperature inside the sample chamber is set as necessary (S202: YES, S203), and if measurement is to be performed at room temperature (S202: NO), the process skips to S203. The probe 15 is brought into contact with the location to be inspected (S204). These steps are the same as S101 to S104.

[0042] (FIG. 3: Steps S205 to S206) The control computer 23 displays the screen shown in FIG. 4, which will be described later. On this screen, the user specifies the amount of movement and the correction value for correcting the drift of the probe 15 (S205). Once the user input is complete, the sample 27 is measured using the specified amount of movement and correction value (S206).

[0043] 4 shows an example of a user interface screen provided by the control computer 23 in S205. The control computer 23 calculates in advance the amount of movement for drift correction (here, the amount of movement Δp+Δs−b in the second embodiment is shown as an example) by previously executing the flowchart of FIG. 4. When this screen is displayed, the amount of movement can be presented as a preset value.

[0044] This screen is composed of multiple text boxes 402. The horizontal axis of the text box arrangement corresponds to the time axis, and the vertical axis corresponds to the probe number 401. The control computer 23 sets a pre-calculated movement amount in the text box 402 corresponding to the correction timing specified by the user (in the second and third embodiments, every t seconds after n minutes have elapsed). The user can further change the movement amount by manual input. This makes it possible to accommodate slight changes in the amount of probe drift due to environmental factors such as the temperature at the time of measurement.

[0045] <Modifications of the Present Invention> In the above embodiment, it has been described that a piezoelectric element is used as the actuator of the probe unit 17 and that creep drift of the piezoelectric element is corrected. If a similar drift occurs when an actuator other than a piezoelectric element is used, the drift can be corrected using the same movement amount as in the above embodiment.

[0046] In the first embodiment, the amount of drift is measured every minute and the amount of movement required to offset it is calculated, but this is just one example, and the time interval can be appropriately determined depending on the characteristics of the probe 15, the measurement environment, etc. Similarly, values ​​and time units such as t seconds or n minutes are also just examples, and longer or shorter time units (e.g., drift correction is performed every t minutes, drift correction starts after n seconds have elapsed, etc.) may also be used.

[0047] In the above embodiment, correction values ​​a to c for preventing loss of contact between the probe 15 and the sample 27 do not necessarily need to be used if there is little possibility of loss of contact. For example, if the accuracy of the amount of movement for drift correction is sufficiently high, it is possible not to use correction values. Radio buttons 403 in FIG. 4 can be used to specify whether or not to use correction values ​​a to c.

[0048] 10: electron gun, 11: partition, 12: primary electron beam, 13: secondary electron detector, 14: secondary electron beam, 15: probe, 16: probe holder, 17: probe unit, 18: sample stage, 19: sample stage drive unit, 20: large sample stage, 21: base, 22: electrical property measuring instrument, 23: control computer, 24: memory unit, 25: electron gun controller, 26: operator operation means, 27: sample, 28: camera, 29: camera, 30: heating means, 31: cooling means

Claims

1. A measurement method for measuring electrical characteristics of a sample by bringing a probe into contact with the sample to be observed using a charged particle beam device, the method comprising: measuring, by the charged particle beam device, a displacement of the probe that occurs under a temperature condition when the measurement is performed; identifying an amount of movement to move the probe to compensate for the displacement; a step of measuring the electrical characteristics while canceling out the displacement using the identified amount of movement when the probe is brought into contact with the sample to measure the electrical characteristics; and a step of measuring a displacement of the probe by the charged particle beam device in advance before the step of measuring the electrical characteristic, thereby specifying the amount of movement; In the step of measuring the electrical characteristics, the predetermined amount of movement is used to measure the electrical characteristics while canceling out the displacement without using information about the current position of the probe. A measuring method characterized by:

2. In the step of measuring the displacement, the displacement is measured at predetermined time intervals; In the step of identifying the amount of movement, the amount of movement is calculated by summing the displacements at the predetermined time intervals over a period of time that has elapsed since the probe came into contact with the sample.

2. The measuring method according to claim 1.

3. the displacement includes creep displacement due to distortion of an actuator that drives the probe; When the step of measuring the electrical characteristics is performed without heating or cooling the sample, In the step of specifying the movement amount, the movement amount capable of canceling out the creep displacement is specified for each predetermined time interval; In the step of measuring the electrical characteristics, when the time period has elapsed since the probe contacted the sample, the probe is retracted above the sample using the movement amount calculated by the summation, and then the electrical characteristics are measured.

3. The measuring method according to claim 2.

4. the measurement method further includes a step of acquiring a first correction amount for avoiding loss of contact between the probe and the sample due to retracting the probe upward in the step of measuring the electrical characteristic; When the step of measuring the electrical characteristics is performed without heating or cooling the sample, the step of measuring the electrical characteristics includes: a step of retracting the probe above the sample using a first corrected movement amount obtained by subtracting the first correction amount from the movement amount calculated by the summation at a point in time when the time length has elapsed; a step of moving the probe downward by a movement amount for offsetting the creep displacement caused by the first corrected movement amount at a time point when the predetermined time interval has further elapsed from the time point when the time length has elapsed; have 4. The measuring method according to claim 3.

5. the displacements include a first displacement caused by distortion of an actuator that drives the probe and a second displacement caused by thermal drift that occurs by heating the probe; When the step of measuring the electrical characteristics after heating the sample is performed, In the step of specifying the movement amount, the movement amount that can cancel out the first displacement and the second displacement is specified at predetermined time intervals, In the step of measuring the electrical characteristics, when a predetermined time has elapsed since the probe came into contact with the sample, the electrical characteristics are measured while the probe is retracted above the sample using the movement amount at each predetermined time interval.

2. The measuring method according to claim 1.

6. the measurement method further includes a step of acquiring a second correction amount for preventing loss of contact between the probe and the sample due to retracting the probe upward in the step of measuring the electrical characteristic; When the step of measuring the electrical characteristics after heating the sample is performed, In the step of measuring the electrical characteristics, the electrical characteristics are measured while the probe is retracted above the sample using a second corrected movement amount obtained by subtracting the second correction amount from the movement amount at each predetermined time interval.

6. The measuring method according to claim 5.

7. the displacements include a first displacement caused by distortion of an actuator that drives the probe, and a third displacement caused by thermal drift that occurs by cooling the probe; When the step of measuring the electrical characteristics after cooling the sample is performed, In the step of specifying the movement amount, the movement amount that can cancel out the first displacement and the third displacement is specified at predetermined time intervals; In the step of measuring the electrical characteristics, when a predetermined time has elapsed since the probe came into contact with the sample, the electrical characteristics are measured while moving the probe in a direction approaching the sample using the movement amount at each predetermined time interval.

2. The measuring method according to claim 1.

8. The measurement method further includes a step of acquiring a third correction amount for preventing loss of contact between the probe and the sample due to an insufficient amount of approach of the probe to the sample in the step of measuring the electrical characteristics, When the step of measuring the electrical characteristics after cooling the sample is performed, In the step of measuring the electrical characteristics, the electrical characteristics are measured while moving the probe in a direction approaching the sample using a third corrected movement amount obtained by adding the third correction amount to the movement amount at each predetermined time interval.

8. The measuring method according to claim 7.

9. The measurement method further includes a step of individually specifying the amount of movement for each of the plurality of probes, In the step of measuring the electrical characteristics, the individual movement amounts are applied to the respective probes, thereby measuring the electrical characteristics while canceling out the displacements of the respective probes.

2. The measuring method according to claim 1.

10. A charged particle beam device for observing a sample by irradiating the sample with a charged particle beam, comprising: a probe for contacting the sample and measuring electrical properties of the sample; a control device that moves a stage on which the sample is mounted; Equipped with The control device measuring a displacement of the probe that occurs under a temperature condition when the observation is performed using the charged particle beam; identifying an amount of movement to move the probe to compensate for the displacement; a step of measuring the electrical characteristics while canceling out the displacement using the identified amount of movement when the probe is brought into contact with the sample to measure the electrical characteristics; and the control device performs a step of measuring a displacement of the probe in advance before the step of measuring the electrical characteristic, thereby specifying the amount of movement; In the step of measuring the electrical characteristics, the control device measures the electrical characteristics while canceling the displacement by using the previously specified amount of movement without using information about the current position of the probe. A charged particle beam device characterized by: