Semiconductor device

Abstract

This semiconductor device comprises: a plurality of leads; a semiconductor element; and a sealing resin that covers the leads and the semiconductor element. The leads include a first lead. The semiconductor element has: an element main surface that faces one side in the thickness direction and an element back surface that faces the other side; and a first electrode disposed on the element main surface. The first lead has a first branch that extends in a first direction orthogonal to the thickness direction. The first branch has a first joint surface and a first main surface that face opposite each other in the thickness direction. The first joint surface and the first electrode are bonded to be electrically conductive. The first branch has one or more projected or recessed parts.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Semiconductor elements using III-V nitride semiconductors (hereinafter sometimes referred to as "nitride semiconductors") such as gallium nitride (GaN) have been developed. Patent Document 1 discloses a semiconductor element using a nitride semiconductor. The semiconductor element disclosed in this document includes an element body made of a semiconductor and a nitride semiconductor layer stacked on a main surface of the element body. The semiconductor element also includes a source electrode, a drain electrode, and a gate electrode disposed on the nitride semiconductor layer. Each of these electrodes is electrically connected to a predetermined lead. The semiconductor element and each lead are covered with a sealing resin.

[0003] JP 2018-82011 A

[0004] In the above-described conventional configuration, if the leads are separated from the sealing resin, this can cause problems such as a decrease in dielectric strength and short circuits.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can suppress peeling between the leads and the sealing resin.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a plurality of leads, a semiconductor element, and a sealing resin covering the plurality of leads and the semiconductor element. The plurality of leads include a first lead. The semiconductor element has a main surface facing one side in a thickness direction, a back surface facing the other side, and a first electrode arranged on the main surface. The first lead has a first branch portion extending in a first direction perpendicular to the thickness direction. The first branch portion has a first bonding surface and a first main surface facing opposite sides in the thickness direction. The first bonding surface and the first electrode are electrically connected. The first branch portion has one or more first recesses or first protrusions.

[0007] According to the above configuration, it is possible to prevent the leads from peeling off from the sealing resin.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a rear view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a left side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a right side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 1. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 1. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 1. FIG. 12 is a partial enlarged plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 13 is a partial enlarged plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 14 is a partial enlarged plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 15 is a partially enlarged plan view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 16 is a partially enlarged plan view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 17 is a partially enlarged plan view showing a fourth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 18 is a partially enlarged plan view showing a fifth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 19 is a partially enlarged plan view showing a sixth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 20 is a partially enlarged plan view showing a seventh modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 21 is a partially enlarged plan view showing an eighth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 22 is a partially enlarged plan view showing a ninth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 23 is a partially enlarged cross-sectional view taken along line A-A in FIG. 22. FIG. 24 is a partially enlarged plan view showing a tenth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 25 is a partially enlarged cross-sectional view taken along line B-B in FIG. 24. FIG. 26 is a partially enlarged plan view showing an eleventh modified example of the semiconductor device according to the first embodiment of the present disclosure. Fig. 27 is a partially enlarged cross-sectional view taken along line CC in Fig. 26. Fig. 28 is a partially enlarged plan view showing a twelfth modification of the semiconductor device according to the first embodiment of the present disclosure.Fig. 29 is a partially enlarged cross-sectional view taken along line DD in Fig. 28. Fig. 30 is a plan view showing a thirteenth modified example of the semiconductor device according to the first embodiment. Fig. 31 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. Fig. 32 is a cross-sectional view taken along line XXXII-XXXII in Fig. 31. Fig. 33 is a cross-sectional view taken along line XXXIII-XXXIII in Fig. 31.

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 13 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A100 of this embodiment includes a plurality of leads 1 to 6, a semiconductor element 7, a wire 99, and a sealing resin 8. The semiconductor device A100 is intended to perform current switching by being mounted on a substrate, for example, but the specific use of the semiconductor device A100 is not limited in any way. For ease of understanding, the sealing resin 8 is omitted from FIGS. 12 and 13.

[0014] In these figures, three mutually orthogonal directions will be referred to as appropriate. As an example, the up-down direction in FIG. 4 will be referred to as the "thickness direction z." One direction orthogonal to the thickness direction z will be referred to as the "x direction" (see, for example, FIG. 1), and the direction orthogonal to the thickness direction z and the x direction will be referred to as the "y direction." The y direction and the x direction may be referred to as the "first direction" and the "second direction," respectively, but the present disclosure is not limited thereto.

[0015] Leads 1 to 6: The leads 1 to 6 appropriately perform functions such as supporting the semiconductor element 7 and forming conductive paths that are electrically connected to the semiconductor element 7. The leads 1 to 6 are made of metal such as copper (Cu), nickel (Ni), iron (Fe), etc. The leads 1 to 6 are formed, for example, by subjecting a metal plate material to a process selected from punching, bending, etching, etc. A plating layer made of silver (Ag), Ni, gold (Au), etc. may be provided in appropriate locations on each of the leads 1 to 6, as needed.

[0016] In this embodiment, the multiple leads 1 to 6 will be described as a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, and an island lead 6. That is, the multiple leads 1 to 6 include a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, and an island lead 6. As will be described later, in this embodiment, the fourth lead 4 and the island lead 6 are connected to each other. Depending on the conduction state of each lead 1 to 6, the leads may be configured as separate pieces, or some of the leads may be connected to each other. Hereinafter, an example will be described in which the first lead 1 and the second lead 2 are formed by punching and bending a metal plate material, and the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6 are formed by etching the metal plate material.

[0017] Island lead 6: As shown in FIGS. 1 to 3 and 8 to 11 , the island lead 6 has a main surface 601, a back surface 602, a thick portion 61, a thin portion 62, and multiple extending portions 63. The main surface 601 faces the z1 side in the z direction, and in the illustrated example, is a smooth surface perpendicular to the z direction. The island lead 6 may have, for example, a recess or groove recessed from the main surface 601 as appropriate. The back surface 602 faces the z2 side in the z direction, and faces the opposite side to the main surface 601. In the illustrated example, the back surface 602 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, titanium (Ti), or the like may be provided on the back surface 602 as appropriate.

[0018] The thick portion 61 is a portion where the main surface 601 and the back surface 602 overlap when viewed in the z direction, and in the example shown, is a rectangular portion when viewed in the z direction. The shape of the thick portion 61 is not limited in any way. The thickness of the thick portion 61 in the z direction is the distance between the main surface 601 and the back surface 602. The thin portion 62 is a portion that overlaps the main surface 601 when viewed in the z direction but does not overlap the back surface 602, and in the example shown, is connected to the thick portion 61 so as to extend to both sides in the x direction and both sides in the y direction when viewed in the z direction. The thickness of the thin portion 62 in the z direction is smaller than the distance between the main surface 601 and the back surface 602. The thicknesses of the thick portion 61 and the thin portion 62 are not limited in any way. For example, the thickness of the thick portion 61 is approximately 0.2 mm to 0.5 mm, and the thickness of the thin portion 62 is 0.1 mm to 0.4 mm. In the illustrated example, the portion of the thin portion 62 extending from the thick portion 61 toward the y1 side in the y direction is larger than the portion extending toward the y2 side.

[0019] The multiple extension portions 63 are portions extending from the ends of the thin-walled portion 62. In the illustrated example, the multiple extension portions 63 extend from the thin-walled portion 62 on both sides in the x-direction. The number of extension portions 63 is not limited and may be multiple or one. In the illustrated example, two extension portions 63 are provided on the x1 side in the x-direction, and two extension portions 63 are provided on the x2 side. The extension portions 63 have end faces 631. The end faces 631 are surfaces facing the opposite side from the thin-walled portion 62 in the x-direction, in other words, surfaces facing outward in the x-direction. The illustrated end faces 631 are surfaces perpendicular to the x-direction. The positions in the x-direction of the two end faces 631 located on the x1 side of the x-direction are the same. The positions in the x-direction of the two end faces 631 located on the x2 side of the x-direction are the same.

[0020] 1, 7, and 8 to 12, the first lead 1 is arranged on the z1 side in the z direction relative to the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6. The first lead 1 of this embodiment has a first main portion 11, a plurality of first branch portions 12, a first extending portion 13, a third extending portion 14, and a first standing portion 15.

[0021] The first main portion 11 is a plate-like portion along the xy plane, and in the illustrated example, has a rectangular (or approximately rectangular) shape with the x direction as the longitudinal direction. The first main portion 11 in the illustrated example has a through hole 111. The through hole 111 penetrates the first main portion 11 in the z direction. The number of through holes 111 is not limited and may be one or more. In the illustrated example, the first main portion 11 has two through holes 111. The shape of the through holes 111 is not limited in any way and may be a circle, an ellipse, a rectangle, a polygon, or the like, as appropriate. In the illustrated example, the through hole 111 has an elliptical shape with the x direction as the longitudinal direction when viewed in the z direction.

[0022] The multiple first branch portions 12 extend from the first main portion 11 to the y2 side in the y direction. There is no limitation on the number of first branch portions 12, and in the example shown, three first branch portions 12 are provided. The multiple first branch portions 12 are arranged side by side in the x direction. The first branch portion 12 has a first connection portion 121 and a first root portion 122.

[0023] The first connecting portion 121 is a portion located on the y2 side of the first main portion 11 in the y direction. The first connecting portion 121 is located on the z2 side of the first main portion 11 in the z direction. The shape of the first connecting portion 121 is not limited in any way, and in the example shown, it has a shape whose longitudinal direction is the y direction when viewed in the z direction. The first connecting portion 121 is perpendicular to the z direction.

[0024] The first root portion 122 is located between the first connection portion 121 and the first main portion 11, and is connected to the first connection portion 121 and the first main portion 11. The first root portion 122 is inclined so as to approach the semiconductor element 7 in the z direction (toward the z2 side) as it moves from the first main portion 11 toward the first connection portion 121 in the y direction (as it moves from the y1 side toward the y2 side).

[0025] In the illustrated example, the three first branches 12 include first branches 12 having different lengths in the y direction. The first branch 12 located closest to the x2 side in the x direction has a shorter length in the y direction than the other first branches 12. The first branch 12 located closest to the x2 side in the x direction is disposed at a position close to a third electrode 73 and a wire 99, which will be described later. The multiple first branches 12 may have the same length.

[0026] As shown in FIGS. 8 and 12 , the first connection portion 121 has a first main surface 1211, a first bonding surface 1212, and a pair of first side surfaces 1213. The first main surface 1211 faces the z1 side in the z direction. The first bonding surface 1212 faces the z2 side in the z direction and is conductively bonded to the first electrode 71. The pair of first side surfaces 1213 are surfaces located on both sides in the y direction. The first side surfaces 1213 are not limited to being flat surfaces, but may also have an appropriate uneven shape. The first side surfaces 1213 have a plurality of first protrusions 1214. That is, the first connection portion 121 further has a plurality of first protrusions 1214. In this embodiment, the first protrusions 1214 are rectangular when viewed in the z direction.

[0027] The first extending portion 13 is a portion extending from the first main portion 11. The first extending portion 13 extends toward the x1 side from the end of the first main portion 11 on the x1 side in the x direction. The first extending portion 13 has a first end face 131. The first end face 131 is a surface facing the opposite side from the first main portion 11 in the x direction, in other words, a surface facing the x1 side, which is the outer side in the x direction. The illustrated first end face 131 is a surface perpendicular to the x direction. The position of the first end face 131 in the x direction is the same as the position in the x direction of the multiple end faces 631 located on the x1 side in the x direction.

[0028] The third extending portion 14 is a portion extending from the first main portion 11. The third extending portion 14 extends toward the x2 side from the end of the first main portion 11 on the x2 side in the x direction. The third extending portion 14 has a third end face 141. The third end face 141 is a surface facing the opposite side from the first main portion 11 in the x direction; in other words, it is a surface facing the x2 side, which is the outer side in the x direction. The illustrated third end face 141 is a surface perpendicular to the x direction. The position of the third end face 141 in the x direction is the same as the position in the x direction of the multiple end faces 631 located on the x2 side in the x direction.

[0029] The first upright portion 15 is connected to the end of the first main portion 11 on the y1 side in the y direction, opposite the first branch portion 12. The first upright portion 15 extends from the first main portion 11 to the z2 side in the z direction. The shape of the first upright portion 15 is not limited in any way, and in the example shown, it is rectangular with the x direction as the longitudinal direction. In the example shown, the center of the first upright portion 15 in the x direction is the same as the center of the first main portion 11 in the x direction.

[0030] 8 to 10, the tip of the first upstanding portion 15 of the first lead 1 on the z2 side in the z direction is conductively joined to the third lead 3 via a fourth conductive joint 94. The fourth conductive joint 94 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, or the like.

[0031] Second lead 2: As shown in FIGS. 1, 7, and 8 to 12, the second lead 2 is arranged on the z1 side in the z direction relative to the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6. The second lead 2 is arranged on the y2 side in the y direction relative to the first lead 1. The second lead 2 of this embodiment has a second main portion 21, a plurality of second branch portions 22, second extending portions 23, a fourth extending portion 24, a second standing portion 25, and a connecting portion 29.

[0032] The second main portion 21 is a plate-like portion along the xy plane, and in the illustrated example, has a rectangular (or approximately rectangular) shape with the x direction as the longitudinal direction. The first main portion 11 and the second main portion 21 are disposed on opposite sides of each other in the y direction with respect to the semiconductor element 7. In the illustrated example, the second main portion 21 has a through hole 211. The through hole 211 penetrates the second main portion 21 in the z direction. The number of through holes 211 is not limited and may be one or more. In the illustrated example, the second main portion 21 has two through holes 211. The shape of the through holes 211 is not limited and may be a circle, an ellipse, a rectangle, a polygon, or the like, as appropriate. In the illustrated example, the through hole 211 has an elliptical shape with the x direction as the longitudinal direction when viewed in the z direction. In this embodiment, the second main portion 21 is disposed at the same position as the first main portion 11 in the z direction.

[0033] The multiple second branch portions 22 extend from the second main portion 21 toward the y1 side in the y direction. There is no limitation on the number of second branch portions 22, and in the example shown, two second branch portions 22 are provided. The multiple second branch portions 22 are arranged side by side in the x direction. The second branch portion 22 has a second connection portion 221 and a second root portion 222.

[0034] The second connecting portion 221 is a portion located on the y1 side in the y direction relative to the second main portion 21. The second connecting portion 221 is located on the z2 side of the second main portion 21 in the z direction. The shape of the second connecting portion 221 is not limited in any way, and in the example shown, it has a shape whose longitudinal direction is the y direction when viewed in the z direction. The second connecting portion 221 is perpendicular to the z direction.

[0035] The second root portion 222 is located between the second connecting portion 221 and the second main portion 21, and is connected to the second connecting portion 221 and the second main portion 21. The second root portion 222 is inclined so as to approach the semiconductor element 7 in the z direction (toward the z2 side) as it moves from the second main portion 21 toward the second connecting portion 221 in the y direction (as it moves from the y2 side toward the y1 side).

[0036] In the illustrated example, the lengths of the two second branch portions 22 in the y direction are equal. However, the lengths of the multiple second branch portions 22 in the y direction may be different from each other.

[0037] As shown in FIG. 12 , the second connection portion 221 has a second main surface 2211, a second bonding surface 2212, and a pair of second side surfaces 2213. The second main surface 2211 faces the z1 side in the z direction. The second bonding surface 2212 faces the z2 side in the z direction and is conductively bonded to the second electrode 72. The pair of second side surfaces 2213 are surfaces located on both sides in the y direction. In the present disclosure, the second side surfaces 2213 are not limited to being flat, but may have an uneven shape as appropriate. The second side surfaces 2213 have multiple second protrusions 2214. That is, the second connection portion 221 further has multiple second protrusions 2214. In this embodiment, the second protrusions 2224 have a rectangular shape when viewed in the z direction. Here, the first protrusions 1214 on the x1 side and the first protrusions 1214 on the x2 side overlap when viewed in the x direction. The second convex portion 2214 on the x1 side and the second convex portion 2214 on the x2 side overlap when viewed in the x direction. The first convex portion 1214 and the second convex portion 2214 do not overlap when viewed in the x direction. In other words, the center of the first convex portion 1214 in the y direction and the center of the second convex portion 2214 in the y direction are offset from each other. The first convex portion 1214 and the second convex portion 2214 may overlap when viewed in the x direction.

[0038] Here, whether a portion of an object is referred to as a convex portion or a concave portion is relative. As shown in FIG. 13 , in the semiconductor device A100, the first side surface 1213 can also be said to have a plurality of first concave portions 1215. In this case, the first connection portion 121 can also be said to have a plurality of first concave portions 1215. In this embodiment, the first concave portion 1215 has a rectangular shape when viewed in the z direction. The second side surface 2213 can also be said to have a plurality of second concave portions 2215. In this case, the second connection portion 221 can also be said to have a plurality of second concave portions 2215. In this embodiment, the second concave portion 2215 has a rectangular shape when viewed in the z direction. In the following description, the term convex portion or concave portion will be used, whichever is more clearly understood.

[0039] The second extending portion 23 is a portion extending from the second main portion 21. The second extending portion 23 extends toward the x1 side from the end of the second main portion 21 on the x1 side in the x direction. The second extending portion 23 has a second end face 231. The second end face 231 is a surface facing the opposite side from the second main portion 21 in the x direction; in other words, it is a surface facing the x1 side, which is the outer side in the x direction. The illustrated second end face 231 is a surface perpendicular to the x direction. The position of the second end face 231 in the x direction is the same as that of the first end face 131 and the end face 631 located on the x1 side in the x direction.

[0040] The fourth extension portion 24 is connected to the second main portion 21 via a connecting portion 29. The dimension of the connecting portion 29 in the y direction is smaller than those of the second main portion 21 and the fourth extension portion 24. As such, the fourth extension portion 24 is not limited to being directly connected to the second main portion 21, but also includes being connected to the second main portion 21 via another portion. This also applies to the second extension portion 23. The above-mentioned first extension portion 13 and third extension portion 14 are also not limited to being directly connected to the first main portion 11, but also include being connected to the first main portion 11 via another portion. The fourth extension portion 24 extends along the y direction. The fourth extension portion 24 has a fourth end surface 241. The fourth end surface 241 is a surface facing away from the second main portion 21 in the y direction; in other words, a surface facing the y2 side, which is outward in the y direction. The illustrated fourth end surface 241 is a surface perpendicular to the y direction.

[0041] The second upright portion 25 is connected to an end of the second main portion 21 on the y2 side in the y direction, opposite the second branch portion 22. The second upright portion 25 extends from the second main portion 21 to the z2 side in the z direction. The shape of the second upright portion 25 is not limited in any way, and in the example shown, it is rectangular with the x direction as the longitudinal direction. In the example shown, the center of the second upright portion 25 in the x direction is the same as the center of the second main portion 21 in the x direction.

[0042] 8 to 10, the tip of the second upstanding portion 25 of the second lead 2 on the z2 side in the z direction is conductively joined to the fourth lead 4 via a fifth conductive joint 95. The fifth conductive joint 95 is, for example, solder.

[0043] Third lead 3: As shown in FIGS. 1 to 3, the third lead 3 is arranged at a distance from the island lead 6 on the y1 side in the y direction. The center of the third lead 3 in the x direction is at approximately the same position in the x direction as the center of the island lead 6 in the x direction. As shown in FIGS. 1 to 3 and 8 to 10, the third lead 3 has a main surface 301, a back surface 302, a thick portion 31, a thin portion 32, and a plurality of extending portions 33.

[0044] The main surface 301 is a surface facing the z1 side in the z direction, and in the illustrated example, is a smooth surface perpendicular to the z direction. The third lead 3 may, for example, have a recess or groove recessed from the main surface 301 as appropriate. The first upright portion 15 described above is joined to the main surface 301 via a fourth conductive joint 94. The back surface 302 is a surface facing the z2 side in the z direction, facing the opposite side to the main surface 301. In the illustrated example, the back surface 302 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be provided on the back surface 302 as appropriate. In this embodiment, the main surface 301 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 302 is located at approximately the same position as the back surface 602.

[0045] The thick portion 31 is a portion where the main surface 301 and the back surface 302 overlap when viewed in the z direction. In the illustrated example, the thick portion 31 is a rectangular portion with the longitudinal direction in the x direction when viewed in the z direction. The shape of the thick portion 31 is not limited in any way. The thickness of the thick portion 31 in the z direction is the distance between the main surface 301 and the back surface 302. The thin portion 32 is a portion that overlaps the main surface 301 when viewed in the z direction but does not overlap the back surface 302. In the illustrated example, the thin portion 32 is connected to the thick portion 31 when viewed in the z direction so as to extend to both sides in the x direction and to the y2 side in the y direction. The thin portion 32 has a portion that is connected to the thick portion 31 when viewed in the z direction so as to extend to the y1 side in the y direction, and this portion is sandwiched between the extending portions 33 in the x direction. The thickness of the thin portion 32 in the z direction is smaller than the distance between the main surface 301 and the back surface 302. There are no limitations on the thickness of the thick portion 31 and the thin portion 32. In this embodiment, the thickness of the thick portion 31 is approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 32 is approximately the same as the thickness of the thin portion 62.

[0046] The multiple extension portions 33 are portions extending from the end of the thick portion 31. In the illustrated example, the multiple extension portions 33 extend from the thick portion 31 toward the y1 side in the y direction. There is no limitation on the number of extension portions 33, and there may be multiple extension portions 33 or just one extension portion. In the illustrated example, four extension portions 33 are provided. The extension portion 33 has an end face 331. The end face 331 is a surface facing the opposite side to the thick portion 31 in the y direction, in other words, a surface facing the y1 side, which is the outside in the y direction. The illustrated end face 331 is a surface perpendicular to the y direction. The multiple end faces 331 are located at the same position in the y direction.

[0047] Fourth lead 4: As shown in FIGS. 1 to 3, the fourth lead 4 is disposed on the y2 side in the y direction relative to the island lead 6. The center of the fourth lead 4 in the x direction is located on the x1 side in the x direction relative to the center of the island lead 6 in the x direction. In the semiconductor device A100, the fourth lead 4 and the island lead 6 are connected by a relay portion 49. Alternatively, the fourth lead 4 may be separated from the island lead 6. As shown in FIGS. 1 to 3 and 8 to 10, the fourth lead 4 has a main surface 401, a back surface 402, a thick portion 41, a thin portion 42, and multiple extension portions 43.

[0048] The main surface 401 is a surface facing the z1 side in the z direction, and in the illustrated example, is a smooth surface perpendicular to the z direction. The fourth lead 4 may, for example, have a recess or groove recessed from the main surface 401 as appropriate. The aforementioned second upright portion 25 is joined to the main surface 401 via a fifth conductive joint 95. The back surface 402 is a surface facing the z2 side in the z direction, facing the opposite side from the main surface 401. In the illustrated example, the back surface 402 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be appropriately provided on the back surface 402. In this embodiment, the main surface 401 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 402 is located at approximately the same position as the back surface 602.

[0049] The thick portion 41 is a portion where the main surface 401 and the back surface 402 overlap when viewed in the z direction. In the illustrated example, the thick portion 41 is a rectangular portion with the longitudinal direction in the x direction when viewed in the z direction. The shape of the thick portion 41 is not limited in any way. The thickness of the thick portion 41 in the z direction is the distance between the main surface 401 and the back surface 402. In this embodiment, the dimension of the thick portion 41 in the x direction is smaller than the dimension of the thick portion 31 in the x direction. The thin portion 42 is a portion that overlaps the main surface 401 when viewed in the z direction but does not overlap the back surface 402. In the illustrated example, the thin portion 42 is connected to the thick portion 41 so as to extend to both sides in the x direction and to the y1 side in the y direction when viewed in the z direction. The thin portion 42 has a portion that is connected to the thick portion 41 so as to extend to the y2 side in the y direction when viewed in the z direction, and this portion is sandwiched between the extending portions 43 in the x direction. The thickness of the thin portion 42 in the z direction is smaller than the distance between the main surface 401 and the back surface 402. The thicknesses of the thick portion 41 and the thin portion 42 are not limited in any way. In this embodiment, the thickness of the thick portion 41 is approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 42 is approximately the same as the thickness of the thin portion 62.

[0050] The multiple extension portions 43 are portions extending from the end of the thick portion 41. In the illustrated example, the multiple extension portions 43 extend from the thick portion 41 toward the y2 side in the y direction. The number of extension portions 43 is not limited in any way and may be multiple or may be one. In the illustrated example, three extension portions 43 are provided. The positions in the x direction of these three extension portions 43 are approximately the same as the positions in the x direction of the three extension portions 33 among the multiple extension portions 33 that are located on the x1 side in the x direction. The extension portion 43 has an end surface 431. The end surface 431 is a surface that faces the opposite side from the thick portion 41 in the y direction, in other words, a surface that faces the y2 side, which is outward in the y direction. The illustrated end surface 431 is a surface perpendicular to the y direction. The positions in the y direction of the multiple end surfaces 431 are the same as each other. The positions of the multiple end faces 431 in the y direction are the same as those of the fourth end face 241 .

[0051] Fifth lead 5: As shown in FIGS. 1 to 3, the fifth lead 5 is arranged on the y2 side in the y direction with respect to the island lead 6. The center of the fifth lead 5 in the x direction is located on the x2 side in the x direction with respect to the center of the island lead 6 in the x direction. The fifth lead 5 is arranged on the x2 side in the x direction with respect to the fourth lead 4. As shown in FIGS. 1 to 3 and 10, the fifth lead 5 has a main surface 501, a back surface 502, a thick portion 51, a thin portion 52, and an extending portion 53.

[0052] The main surface 501 is a surface facing the z1 side in the z direction, and in the illustrated example, is a smooth surface perpendicular to the z direction. The fifth lead 5 may have, for example, a recess or groove recessed from the main surface 501 as appropriate. A wire 99 is bonded to the main surface 501. The back surface 502 is a surface facing the z2 side in the z direction, and faces the opposite side to the main surface 501. In the illustrated example, the back surface 502 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be provided on the back surface 502 as appropriate. In this embodiment, the main surface 501 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 502 is located at approximately the same position as the back surface 602.

[0053] The thick portion 51 is a portion where the main surface 501 and the back surface 502 overlap when viewed in the z direction. In the illustrated example, the thick portion 51 is a rectangular portion when viewed in the z direction. The shape of the thick portion 51 is not limited in any way. The thickness of the thick portion 51 in the z direction is the distance between the main surface 501 and the back surface 502. In this embodiment, the dimension of the thick portion 51 in the x direction is smaller than the dimensions of the thick portions 31 and 41 in the x direction. The thin portion 32 is a portion that overlaps with the main surface 301 when viewed in the z direction but does not overlap with the back surface 302. In the illustrated example, the thin portion 32 is connected to the thick portion 51 so as to extend on both sides in the x direction and to the y1 side in the y direction when viewed in the z direction. The thickness of the thin portion 52 in the z direction is smaller than the distance between the main surface 501 and the back surface 502. The thickness of the thick portion 51 and the thin portion 52 is not limited in any way. In this embodiment, the thickness of the thick portion 51 is approximately the same as the thickness of the thick portion 61 , and the thickness of the thin portion 52 is approximately the same as the thickness of the thin portion 62 .

[0054] The extension portion 53 is a portion extending from the end of the thick portion 51. In the illustrated example, the extension portion 53 extends from the thick portion 51 toward the y2 side in the y direction. The number of extension portions 53 is not limited and may be multiple or may be one. In the illustrated example, one extension portion 53 is provided. The position of the extension portion 53 in the x direction is approximately the same as the position in the x direction of the extension portion 33 among the multiple extension portions 33 that is located furthest to the x2 side in the x direction. The extension portion 53 has an end face 531. The end face 531 is a surface facing the opposite side from the thick portion 51 in the y direction; in other words, it is a surface facing the y2 side, which is the outer side in the y direction. The illustrated end face 531 is a surface perpendicular to the y direction. The position of the end face 531 in the y direction is the same as that of the fourth end face 241 and the multiple end faces 431.

[0055] Semiconductor element 7: The semiconductor element 7 is a component that performs the electrical functions of the semiconductor device A100. The specific configuration of the semiconductor element 7 is not limited. In this embodiment, the semiconductor element 7 is a transistor using a nitride semiconductor, more specifically, a GaN-HEMT (High Electron Mobility Transistor) element using gallium nitride (GaN). The semiconductor element 7 is not limited to a nitride semiconductor, and other semiconductors such as silicon (Si) and silicon carbide (SiC) may also be used. The semiconductor element 7 is not limited to a HEMT, and may be other transistors such as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 7 is mounted on the thick portion 61 of the island lead 6. As shown in FIGS. 1, 2, and 8 to 12, the semiconductor element 7 has an element body 70, multiple first electrodes 71, multiple second electrodes 72, and a third electrode 73.

[0056] The element body 70 is, for example, a portion in which a substrate layer, a buffer layer, and a nitride layer (all not shown) are stacked. The element body 70 has an element main surface 701 and an element back surface 702. The element main surface 701 faces the z1 side in the z direction. The element back surface 702 faces the z2 side in the z direction, facing the opposite side to the element main surface 701. In the illustrated example, a metal layer is provided on the element back surface 702. As shown in FIGS. 12 to 14 , this metal layer and the main surface 601 of the island lead 6 are joined by a first conductive joint 91. The first conductive joint 91 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, or the like. The above-mentioned metal layer is provided for joining by the first conductive joint 91, but the metal layer may not be provided. Alternatively, the metal layer may be at the same potential as, for example, the second electrode 72. In the illustrated example, the semiconductor element 7 is disposed at a position overlapping a part of the thick portion 61 and a part of the thin portion 62 of the island lead 6 when viewed in the z direction.

[0057] A plurality of first electrodes 71, a plurality of second electrodes 72, and a third electrode 73 are arranged on the element principal surface 701. The number of the plurality of first electrodes 71 and the plurality of second electrodes 72 is not limited in any way. In the illustrated example, three first electrodes 71 and two second electrodes 72 are provided. The number of the plurality of first electrodes 71 is the same as the number of the plurality of first branch portions 12, and the number of the plurality of second electrodes 72 is the same as the number of the plurality of second branch portions 22. The first electrode 71 is an electrode that functions as a drain electrode. The second electrode 72 is an electrode that functions as a source electrode. The plurality of first electrodes 71 and the plurality of second electrodes 72 are arranged alternately in the x direction. The shapes of the first electrodes 71 and the second electrodes 72 are not limited in any way. In the illustrated example, they are shaped such that the longitudinal direction is in the y direction, more specifically, they are tapered.

[0058] As shown in Figures 1, 2, 8, and 10 to 12, the first connection portions 121 of the multiple first branch portions 12 of the first lead 1 are individually conductively joined to the multiple first electrodes 71 via second conductive joint portions 92. The second conductive joint portions 92 are, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc. As shown in Figures 1, 2, 9, 11, and 12, the second connection portions 221 of the multiple second branch portions 22 of the second lead 2 are individually conductively joined to the multiple second electrodes 72 via third conductive joint portions 93. The third conductive joint portions 93 are, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.

[0059] The third electrode 73 functions as a gate electrode. The number of third electrodes 73 is not limited and may be one or more. In the illustrated example, one third electrode 73 is provided. The third electrode 73 is disposed, for example, at one of the four corners of the element principal surface 701. In the illustrated example, the third electrode 73 is disposed near a corner of the element principal surface 701 that is on the x2 side in the x direction and the y2 side in the y direction. The third electrode 73 is disposed on the y2 side in the y direction relative to the first electrode 71 that is on the x2 side in the x direction of the two first electrodes 71. A wire 99 is joined to the third electrode 73, and the third electrode 73 is electrically connected to the fifth lead 5 via the wire 99. Instead of the wire 99, a conductive member made of a metal plate material may be used to electrically connect the third electrode 73 and the fifth lead 5.

[0060] Sealing resin 8: The sealing resin 8 covers a portion of each of the leads 1 to 6, the semiconductor element 7, and the wires 99, and is made of an insulating material such as epoxy resin. As shown in Figures 1 to 11, the sealing resin 8 has a first surface 81, a second surface 82, a third surface 83, a fourth surface 84, a fifth surface 85, and a sixth surface 86, and is shaped like a rectangular parallelepiped.

[0061] The first surface 81 is a surface facing the z1 side in the z direction. In the example shown, the first surface 81 is a plane perpendicular to the z direction. The second surface 82 is a surface facing the z2 side in the z direction. In the example shown, the second surface 82 is a plane perpendicular to the z direction. The third surface 83 is a surface facing the y1 side in the y direction. In the example shown, the third surface 83 is a plane perpendicular to the y direction. The fourth surface 84 is a surface facing the y2 side in the y direction. In the example shown, the fourth surface 84 is a plane perpendicular to the y direction. The fifth surface 85 is a surface facing the x1 side in the x direction. In the example shown, the fifth surface 85 is a plane perpendicular to the x direction. The sixth surface 86 is a surface facing the x2 side in the x direction. In the example shown, the sixth surface 86 is a plane perpendicular to the x direction.

[0062] A back surface 602 of the island lead 6, a back surface 302 of the third lead 3, a back surface 402 of the fourth lead 4, and a back surface 502 of the fifth lead 5 are exposed on the z2 side in the z direction from the second surface 82. The second surface 82, the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 are flush with one another. However, all or any of the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 may protrude slightly from the second surface 82.

[0063] A plurality of end faces 331 of the third lead 3 are exposed on the y1 side in the y direction from the third surface 83. The third surface 83 and the plurality of end faces 331 of the third lead 3 are flush with each other. However, all or any of the plurality of end faces 331 may slightly protrude from the third surface 83.

[0064] From the fourth surface 84, the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 are exposed on the y2 side in the y direction. The fourth surface 84, the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 are flush with one another. However, all or any of the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 may protrude slightly from the fourth surface 84.

[0065] From the fifth surface 85, the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 are exposed on the x1 side in the x direction. The fifth surface 85, the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 are flush with one another. However, all or any of the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 may slightly protrude from the fifth surface 85.

[0066] From the sixth surface 86, the third end face 141 of the first lead 1 and the multiple end faces 631 of the island lead 6 are exposed on the x2 side in the x direction. The sixth surface 86, the third end face 141 of the first lead 1, and the multiple end faces 631 of the island lead 6 are flush with one another. However, all or any of the third end face 141 of the first lead 1 and the multiple end faces 631 of the island lead 6 may protrude slightly from the sixth surface 86.

[0067] The semiconductor device A100 is mounted on a circuit board (not shown) or the like using the back surfaces 302, 402, and 502 exposed from the second surface 82 of the sealing resin 8 as mounting terminals. That is, the mounting surface of the semiconductor device A100 is the z2 side, which is opposite to the z1 side, which is the side to which the element main surface 701 of the semiconductor element 7 faces in the z direction. The back surface 602 is used as a heat dissipation surface for dissipating heat from the semiconductor element 7.

[0068] Next, the operation of the semiconductor device A100 will be described.

[0069] 12 , the first connection portion 121 has a first convex portion 1214 or a first concave portion 1215, and the second connection portion 221 has a second convex portion 2214 or a second concave portion 2215. This increases the contact area between the sealing resin 8 and the first connection portion 121 and the second connection portion 221, and makes it possible to suppress peeling of the sealing resin 8.

[0070] The first convex portion 1214 and the second convex portion 2214 are configured not to overlap when viewed in the x direction, which makes it possible to increase the distance between the first convex portion 1214 and the second convex portion 2214 that are positioned opposite each other, thereby making it possible to prevent unintended short circuits and the like from occurring.

[0071] 13 to 20 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. The configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0072] 14 shows a first modification of the semiconductor device A100. In the semiconductor device A101 of this modification, the shapes of the first recess 1215 and the second recess 2215 are different from those of the semiconductor device A100.

[0073] In this modification, the first recess 1215 and the second recess 2215 have a triangular shape when viewed in the z direction. The multiple first recesses 1215 are adjacent to each other with a gap between them. The multiple second recesses 2215 are adjacent to each other with a gap between them. Unlike FIG. 14 , there may be only one first recess 1215 or only one second recess 2215. Furthermore, a configuration having only either the first recess 1215 or the second recess 2215 may be possible.

[0074] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, thereby preventing the sealing resin from peeling off. As can be seen from this modification, the cross-sectional size of the first recess 1215 and the second recess 2215 perpendicular to the x-direction is not limited to a constant size, and may be configured to decrease from the outside to the inside in the x-direction.

[0075] 15 shows a second modification of the semiconductor device A100. In the semiconductor device A102 of this modification, the shapes of the first recess 1215 and the second recess 2215 are different from those in the above-described example.

[0076] In this modification, the first recess 1215 and the second recess 2215 have a trapezoidal shape when viewed in the z direction, and the size of the cross section perpendicular to the x direction decreases from the outside to the inside in the x direction. The multiple first recesses 1215 are adjacent to each other and spaced apart. The multiple second recesses 2215 are adjacent to each other and spaced apart. Unlike FIG. 15 , there may be only one first recess 1215 or only one second recess 2215. Furthermore, a configuration having only either the first recess 1215 or the second recess 2215 may be used.

[0077] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, making it possible to prevent the sealing resin from peeling off.

[0078] 16 shows a third modification of the semiconductor device A100. In the semiconductor device A103 of this modification, the shapes of the first recess 1215 and the second recess 2215 are different from those in the above-described example.

[0079] In this modification, the first recess 1215 has five sides and is shaped to narrow toward the inside in the x-direction of the first connection portion 121. The second recess 2215 has five sides and is shaped to narrow toward the inside in the x-direction of the second connection portion 221.

[0080] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, making it possible to prevent the sealing resin 8 from peeling off.

[0081] 17 shows a fourth modification of the semiconductor device A100. In the semiconductor device A104 of this modification, the shapes of the first recess 1215 and the second recess 2215 are different from those in the above-described example.

[0082] In this modification, the first recess 1215 has a trapezoidal shape when viewed in the z direction, and the size of the cross section perpendicular to the x direction increases from the outside to the inside in the x direction. The second recess 2215 has a trapezoidal shape when viewed in the z direction, and the size of the cross section perpendicular to the x direction increases from the outside to the inside in the x direction.

[0083] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, thereby preventing peeling of the sealing resin 8. As can be seen from this modification, the cross-sectional size of the first recess 1215 and the second recess 2215 perpendicular to the x-direction is not limited to a fixed size, and may be configured to increase from the outside to the inside in the x-direction. The shapes of the first recess 1215 and the second recess 2215 in a plan view (shape as viewed in the z-direction) are not limited in any way, and the number of them is also arbitrary. In the following modifications, the shapes of the first convex portion 1214, the first recess 1215, the second convex portion 2214, and the second recess 2215 are not limited to the shapes shown in the drawings, and the number is also arbitrary.

[0084] 18 shows a fifth modification of the semiconductor device A100. In the semiconductor device A105 of this modification, the arrangement of the first convex portion 1214 and the second convex portion 2214 differs from the above-described example.

[0085] In this modification, the first convex portion 1214 on the x1 side and the first convex portion 1214 on the x2 side do not overlap each other when viewed in the x direction. The second convex portion 2214 on the x1 side and the second convex portion on the x2 side do not overlap each other when viewed in the x direction. Furthermore, the first convex portion 1214 on the x2 side and the second convex portion 2214 on the x1 side do not overlap each other when viewed in the x direction. That is, the y-direction center of the first convex portion 1214 on the x2 side and the y-direction center of the second convex portion 2214 on the x1 side do not overlap each other when viewed in the x direction. In FIG. 18 , the first convex portion 1214, the first concave portion 1215 (the length between adjacent first convex portions 1214), the second convex portion 2214, and the second concave portion 2215 (the length between adjacent second convex portions 2214) are all equal, but they may be unequal. In this case, for example, the first convex portion 1214 on the x1 side and the first convex portion 1214 on the x2 side may partially overlap when viewed in the x direction. The first convex portion 1214 on the x2 side and the second convex portion 2214 on the x1 side may partially overlap when viewed in the x direction.

[0086] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, making it possible to suppress peeling of the sealing resin 8. In this modification, the first convex portion 1214 on the xx1 side and the first convex portion 1214 on the x2 side do not overlap with each other when viewed in the x direction, and the second convex portion 2214 on the x1 side and the second convex portion on the x2 side do not overlap with each other when viewed in the x direction, so it is possible to prevent the size of the first connecting portion 121 and the second connecting portion 221 in the x direction from becoming too small locally, and it is possible to effectively ensure the area through which current flows.

[0087] 19 shows a sixth modification of the semiconductor device A100. In the semiconductor device A106 of this modification, the arrangement of the first recess 1215 and the second recess 2215 differs from that of the above-described example.

[0088] In this modification, similar to the first modification of the first embodiment, the first recesses 1215 and the second recesses 2215 have a triangular shape when viewed in the z direction. Adjacent first recesses 1215 are connected to each other, and adjacent second recesses 2215 are also connected to each other.

[0089] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, thereby suppressing peeling of the sealing resin 8. The configuration in which adjacent first recesses 1215 and adjacent second recesses 2215 are connected to each other is advantageous for increasing the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221.

[0090] 20 shows a seventh modification of the semiconductor device A100. In the semiconductor device A107 of this modification, the arrangement of the first convex portion 1214 and the second convex portion 2214 differs from the above-described example.

[0091] In this modification, the first side surface 1213 on the x2 side of the first connecting portion 121 has a first convex portion 1214 (first concave portion 1215), and the first side surface 1213 on the x1 side does not have the first convex portion 1214 (first concave portion 1215). The second side surface 2213 on the x1 side of the second connecting portion 221 has a second convex portion 2214 (second concave portion 2215), and the second side surface 2213 on the x2 side does not have the second convex portion 2214 (second concave portion 2215). The first side surface 1213 on the x1 side may have the first convex portion 1214 (first concave portion 1215), and the second side surface 2213 on the x2 side may have the second convex portion 2214 (second concave portion 2215).

[0092] This modification also increases the contact surface between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, making it less likely that peeling of the sealing resin 8 will occur. As can be understood from this modification, the first connecting portion 121 and the second connecting portion 221 may have the first convex portion 1214 (first concave portion 1215) and the second convex portion 2214 (second concave portion 2215) only on one side in the x direction.

[0093] 21 shows an eighth modification of the semiconductor device A100. In the semiconductor device A108 of this modification, the first connection portion 121 has a first convex portion 1214 (first concave portion 1215), and the second connection portion 221 does not have a second convex portion 2214 (second concave portion 2215). Alternatively, the second connection portion 221 may have the second convex portion 2214 (second concave portion 2215), and the first connection portion 121 may not have the first convex portion 1214 (first concave portion 1215).

[0094] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, making it possible to prevent the sealing resin 8 from peeling off.

[0095] 22 and 23 show a ninth modification of the semiconductor device A100. In the semiconductor device A109 of this modification, the shapes of the first recess 1215 and the second recess 2215 are different from those in the above-described example.

[0096] In this embodiment, the first recess 1215 reaches the first main surface 1211 but does not reach the first bonding surface 1212. Similarly, the second recess 2215 reaches the second main surface 2211 but does not reach the second bonding surface 2212. In Fig. 22, the shapes of the first recess 1215 and the second recess 2215 are both rectangular parallelepipeds, but the specific shapes are not important. The number of first recesses 1215 and second recesses 2215 is arbitrary.

[0097] In this modified example, the sealing resin 8 enters the first recess 1215 and the second recess 2215, thereby increasing the contact area between the sealing resin 8 and the first connection portion 121 and the second connection portion 221, and thereby preventing the sealing resin 8 from peeling off.

[0098] Tenth Modification of First Embodiment: FIGS. 24 and 25 show a tenth modification of the semiconductor device A100. In the semiconductor device A110 of this modification, the first convex portion 1214 reaches the first main surface 1211 but does not reach the first bonding surface 1212. When viewed in the z direction, the first convex portion 1214 protrudes from the first electrode 71 in the x direction. The sealing resin 8 is filled between the first convex portion 1214 and the semiconductor element 7. The second convex portion 2214 reaches the second main surface 2211 but does not reach the second bonding surface 2212. When viewed in the z direction, the second convex portion 2214 protrudes from the second electrode 72 in the x direction. The sealing resin 8 is filled between the second convex portion 2214 and the semiconductor element 7. In FIG. 22 , the first convex portion 1214 and the second convex portion 2214 have a triangular shape when viewed in the z direction, but the specific shape is not important. The number of first convex portions 1214 and second convex portions 2214 is arbitrary.

[0099] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221. The sealing resin 8 penetrates into the z2 side of the first convex portion 1214 and the second convex portion 2214 in the z direction, thereby further suppressing peeling of the sealing resin 8. The first convex portion 1214 protrudes from the first electrode 71 when viewed in the z direction, thereby more reliably filling the gap between the first convex portion 1214 and the semiconductor element 7. The second convex portion 2214 protrudes from the second electrode 72 when viewed in the z direction, thereby more reliably filling the gap between the second convex portion 2214 and the semiconductor element 7.

[0100] 26 and 27 show an eleventh modification of the semiconductor device A100. In this embodiment, the first convex portion 1214 does not reach both the first main surface 1211 and the first bonding surface 1212. The second convex portion 2214 does not reach both the second main surface 2211 and the second bonding surface 2212. In FIG. 26, the shapes of the first convex portion 1214 and the second convex portion 2214 are both rectangular parallelepipeds, but the specific shapes are not important. The number of first convex portions 1214 and second convex portions 2214 is arbitrary.

[0101] This modification also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, making it possible to prevent the sealing resin 8 from peeling off.

[0102] 28 and 29 show a twelfth modification of the semiconductor device A100. In the semiconductor device A112 of this modification, the configurations of the first recess 1215 and the second recess 2215 are different from those in the above-described example.

[0103] In this embodiment, the first connecting portion 121 has a first recess 1215 on the first main surface 1211. The second connecting portion 221 has a second recess 2215 on the second main surface 2211. As shown in FIG. 29 , the first recess 1215 does not reach the first bonding surface 1212. The second recess 2215 does not reach the second bonding surface 2212. In FIG. 28 , the first convex portion 1214 and the second convex portion 2214 are both rectangular parallelepipeds, but the specific shape is not important. The number of first recesses 1215 and second recesses 2215 is arbitrary, and a configuration having only one of the first recess 1215 or the second recess 2215 may be used.

[0104] In this modified example, the sealing resin 8 enters the first recess 1215 and the second recess 2215, thereby increasing the contact area between the sealing resin 8 and the first connection portion 121 and the second connection portion 221, and thereby preventing the sealing resin 8 from peeling off.

[0105] 30 shows a thirteenth modification of the semiconductor device A100. The semiconductor device A113 of this modification has a configuration generally in common with the semiconductor device A100 described above, except for the following points.

[0106] In the semiconductor device A113, the first lead 1 does not have the above-described through hole 111, and the second lead 2 does not have the through hole 211. The number of the plurality of extension portions 33 of the third lead 3 and the number of the plurality of extension portions 43 of the fourth lead 4 are different from those in the semiconductor device A100.

[0107] The size in the x direction of the first main portion 11 of the first lead 1 is such that the size of the portion located on the y1 side in the y direction is smaller than the size of the portion located on the y2 side in the y direction, and is the same (or approximately the same) as the size in the x direction of the first upright portion 15. The size in the x direction of the second main portion 21 of the second lead 2 is such that the size of the portion located on the y2 side in the y direction is smaller than the size of the portion located on the y1 side in the y direction, and is the same (or approximately the same) as the size in the x direction of the second upright portion 25.

[0108] The distance in the y direction between the y2-side edge of the main surface 101 in the y direction and the first extending portion 13 and the third extending portion 14 is smaller in this modification than in the semiconductor device A100. The distance in the y direction between the y1-side edge of the main surface 201 in the y direction and the second extending portion 23 and the fourth extending portion 24 is smaller in this modification than in the semiconductor device A100.

[0109] The distance in the y direction between adjacent first electrodes 71 in this modified example is smaller than the distance in semiconductor device A100, and is, for example, smaller than the x-direction width of the first branch portion 12 and the x-direction width of the second branch portion 22.

[0110] The size of the first electrode 71 in the x direction may be the same as or larger than the maximum dimension of the first branch portion 12 in the x direction or the maximum dimension of the second branch portion 22 in the x direction.

[0111] The semiconductor element 7 of this modified example has two third electrodes 73. The two third electrodes 73 are spaced apart from each other in the x direction. A wire 99 is connected to the third electrode 73 located on the x2 side in the x direction. No wire 99 is connected to the third electrode 73 located on the x1 side in the x direction. If a semiconductor device is provided with a layout in which the fourth lead 4 and the fifth lead 5 are swapped in the x direction, the wire 99 can be connected to the third electrode 73 located on the x1 side in the x direction.

[0112] In this modification, the size in the y direction of two of the three first branch portions 12 located on both sides in the x direction is smaller than the size in the y direction of the first branch portion 12 located in the center in the x direction. This corresponds to the fact that two third electrodes 73 are arranged on both sides in the x direction. The end of the central first electrode 71 on the y2 side in the y direction may be located on the y2 side in the y direction with respect to the extension portion 63.

[0113] The distance between the edge of the semiconductor element 7 on the y2 side in the y direction and the edge of the main surface 601 on the y2 side in the y direction is smaller in this modification than in the semiconductor device A100. The distance between the edge of the semiconductor element 7 on the y2 side in the y direction and the edge of the main surface 601 on the y2 side in the y direction may be the same (or approximately the same) as the distance between both edges of the semiconductor element 7 in the x direction and both edges of the main surface 601 in the x direction.

[0114] The outer edge of the connection portion between the fourth extension portion 24 and the connecting portion 29 may be non-curved (right-angled in the example of Figure 1) as in the semiconductor device A100, or may be curved as in this modified example.

[0115] 31 to 33 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A200 of this embodiment includes a first lead 1, a second lead 2, a fifth lead 5, a semiconductor element 7, and a sealing resin 8.

[0116] In this embodiment, the element 7 is disposed with its element main surface 701 facing the z2 side in the z direction and its element back surface 702 facing the z1 side in the z direction. The first electrodes 71, the second electrodes 72, and the third electrodes 73 are formed of a plurality of metal bumps. The first electrodes 71 are grouped together with a plurality of metal bumps (two or three in the figure) arranged in the y direction. Multiple sets (three sets) of first electrodes 71 are arranged in the x direction. The second electrodes 72 are grouped together with a plurality of metal bumps (three in the figure) arranged in the y direction. Multiple sets (two sets) of second electrodes 72 are arranged in the x direction. The multiple sets of first electrodes 71 and the multiple sets of second electrodes 72 are alternately arranged in the x direction.

[0117] The first lead 1 has a main surface 101 and a back surface 102. The main surface 101 faces the z1 side in the z direction and faces the element main surface 701 of the semiconductor element 7. The back surface 102 faces the z2 side in the z direction and is exposed from the second surface 82 of the sealing resin 8. In this example, the first branch portion 12 is thinner than the first main portion 11. The first branch portion 12 is not exposed on the z2 side in the z direction from the second surface 82 of the sealing resin 8.

[0118] The second lead 2 has a main surface 201 and a back surface 202. The main surface 201 faces the z1 side in the z direction and faces the element main surface 701 of the semiconductor element 7. The back surface 202 faces the z2 side in the z direction and is exposed from the second surface 82 of the sealing resin 8. In this example, the second branch portion 22 is thinner than the second main portion 21. The second branch portion 22 is not exposed on the z2 side in the z direction from the second surface 82 of the sealing resin 8. Such first lead 1 and second lead 2 can be formed, for example, by etching a metal plate material from both sides in the z direction. The first lead 1 and second lead 2 may have a constant thickness.

[0119] The shapes of the multiple first branches 12 of the first lead 1 and the multiple second branches 22 of the second lead 2 when viewed in the z direction are similar to, for example, the multiple first branches 12 and the multiple second branches 22 in the semiconductor device A100 described above. However, the multiple first branches 12 and the multiple second branches 22 may have the shapes in the semiconductor devices A100 to A112, or may also have other shapes. The multiple first branches 12 and the multiple second branches 22 are located on the z2 side in the z direction with respect to the semiconductor element 7.

[0120] The plurality of first branch portions 12 are individually conductively joined to the plurality of sets of first electrodes 71 via second conductive joints 92. The plurality of second branch portions 22 are conductively joined to the plurality of sets of second electrodes 72 via third conductive joints 93.

[0121] The fifth lead 5 has a third connection portion 55. A third electrode 73 is electrically connected to the third connection portion 55 by a conductive joint portion (not shown). One surface of the fifth lead 5 is exposed from the second surface 82 of the sealing resin 8.

[0122] The semiconductor device A200 of this embodiment has a configuration in which a semiconductor element 7 is flip-chip bonded to the first lead 1, the second lead 2, and the third lead 3. The back surface 102 of the first lead 1, the back surface 202 of the second lead 2, and one surface of the fifth lead 5 (the surface exposed from the second surface 82) are used as mounting terminals when the semiconductor device A200 is mounted on a circuit board (not shown) or the like.

[0123] This embodiment also increases the contact area between the sealing resin 8 and the first connecting portion 121 and the second connecting portion 221, thereby preventing peeling of the sealing resin 8. As can be understood from this embodiment, the semiconductor element 7 may be configured to be flip-chip bonded to the first lead 1, the second lead 2, and the third lead 3.

[0124] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways. The present disclosure includes the embodiments described in the following appendices.

[0125] Supplementary Note 1. A semiconductor device comprising: a plurality of leads; a semiconductor element; and a sealing resin covering the plurality of leads and the semiconductor element, wherein the plurality of leads include a first lead, wherein the semiconductor element has a main surface facing one side in a thickness direction and a back surface facing the other side, and a first electrode arranged on the main surface of the element, wherein the first lead has a first branch portion extending in a first direction perpendicular to the thickness direction, wherein the first branch portion has a first bonding surface and a first main surface facing opposite sides in the thickness direction, wherein the first bonding surface and the first electrode are electrically bonded, and the first branch portion has one or more first protrusions or first recesses. Supplementary Note 2. The semiconductor device according to Supplementary Note 1, wherein the first protrusions or first recesses of the first branch portions protrude or are recessed in a second direction perpendicular to the thickness direction and the first direction. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein the first branch portion has a plurality of the first protrusions or the first recesses, and adjacent first protrusions or first recesses are spaced apart from each other. Supplementary Note 4. The semiconductor device according to Supplementary Note 2, wherein the first branch portion has a plurality of the first protrusions or the first recesses, and adjacent first protrusions or first recesses are connected to each other. Supplementary Note 5. The semiconductor device according to any of Supplements 2 to 4, wherein the first protrusions are spaced apart from the first bonding surface in the thickness direction and protrude from the first electrode as viewed in the thickness direction. Supplementary Note 6. The semiconductor device according to any of Supplements 2 to 5, wherein the first branch portion has a plurality of the first protrusions or first recesses arranged on both sides in the second direction. Supplementary Note 7. The semiconductor device according to Supplementary Note 6, wherein the first recess arranged on one side in the second direction and the first recess arranged on the other side in the second direction do not overlap as viewed in the second direction. Supplementary Note 8. 8. The semiconductor device according to claim 2, wherein the first protrusion or the first recess reaches both the first bonding surface and the first main surface.Supplementary Note 9. The semiconductor device according to any one of Supplementary Notes 2 to 8, wherein the plurality of leads include a second lead, the semiconductor element has a second electrode arranged on the element main surface, the second lead has a second branch portion extending in the first direction, the second branch portion and the second electrode are electrically connected, and the second branch portion has one or more second protrusions or second recesses. Supplementary Note 10. The semiconductor device according to Supplementary Note 9, wherein the first protrusions or first recesses and the second protrusions or second recesses that are positioned opposite each other in the second direction do not overlap each other when viewed in the second direction.

[0126] A100 to A112, A200: semiconductor device 1: first lead 2: second lead 3: third lead 4: fourth lead 5: fifth lead 6: island lead 7: semiconductor element 8: sealing resin 11: first main portion 12: first branch portion 13: first extending portion 14: third extending portion 15: first standing portion 21: second main portion 22: second branch portion 23: second extending portion 24: fourth extending portion 25: second standing portion 29: connecting portion 31: thick portion 32: thin portion 33: extending portion 41: thick portion 42: thin portion 43: extending portion 49: relay portion 51: thick portion 52: thin portion 53: extending portion 55: third connecting portion 61: thick portion 62: thin portion 63: Extension portion 70: Element body 71: First electrode 72: Second electrode 73: Third electrode 81: First surface 82: Second surface 83: Third surface 84: Fourth surface 85: Fifth surface 86: Sixth surface 91: First conductive joint 92: Second conductive joint 93: Third conductive joint 94: Fourth conductive joint 95: Fifth conductive joint 99: Wire 101: Main surface 102: Back surface 111: Through hole 121: First connection portion 122: First root portion 131: First end surface 141: Third end surface 201: Main surface 202: Back surface 211: Through hole 221: Second connection portion 222: Second root portion 231: Second end surface 241: Fourth end surface 301: Main surface 302: Back surface 331: End surface 401: Main surface 402: Back surface 431: End surface 501: Main surface 502: Back surface 531: End surface 601: Main surface 602: Back surface 631: End surface 701: Element main surface 702: Back surface of element 1211: First main surface 1212: First bonding surface 1213: First side surface 1214: First convex portion 1215: First concave portion 2211: Second main surface 2212: Second bonding surface 2213: Second side surface 2214: Second convex portion 2215: Second concave portion 2224: Second convex portion x: x direction (second direction) y: y direction (first direction) z: Thickness direction

Claims

1. Multiple leads and A semiconductor element; a sealing resin that covers the leads and the semiconductor element, the plurality of leads includes a first lead; the semiconductor element has a main surface facing one side in a thickness direction, a back surface facing the other side, and a first electrode disposed on the main surface; the first lead has a first branch portion extending in a first direction perpendicular to the thickness direction, the first branch portion has a first bonding surface and a first main surface facing in opposite directions in the thickness direction, the first bonding surface and the first electrode are electrically connected to each other, The first branch portion has one or more first protrusions or first recesses.

2. The semiconductor device according to claim 1 , wherein the first protrusion or the first recess of the first branch portion protrudes or recesses in a second direction perpendicular to the thickness direction and the first direction.

3. the first branch portion has a plurality of the first protrusions or the first recesses, The semiconductor device according to claim 2 , wherein the adjacent first convex portions or the adjacent first concave portions are spaced apart from each other.

4. the first branch portion has a plurality of the first protrusions or the first recesses, The semiconductor device according to claim 2 , wherein the first convex portions or the first concave portions adjacent to each other are connected to each other.

5. 5. The semiconductor device according to claim 2, wherein the first protrusion is spaced apart from the first bonding surface in the thickness direction and protrudes beyond the first electrode when viewed in the thickness direction.

6. 5. The semiconductor device according to claim 2, wherein said first branch portion has a plurality of said first protrusions or said first recesses arranged on both sides in said second direction.

7. 7. The semiconductor device according to claim 6, wherein the first recess arranged on one side in the second direction and the first recess arranged on the other side in the second direction do not overlap when viewed in the second direction.

8. 5. The semiconductor device according to claim 2, wherein the first protrusion or the first recess reaches both the first bonding surface and the first main surface.

9. the plurality of leads includes a second lead; the semiconductor element has a second electrode disposed on the element main surface, the second lead has a second branch portion extending in the first direction, the second branch portion and the second electrode are electrically connected to each other, 5. The semiconductor device according to claim 2, wherein the second branch portion has one or more second protrusions or second recesses.

10. 10. The semiconductor device according to claim 9, wherein the first convex portion or the first concave portion and the second convex portion or the second concave portion that are positioned opposite each other in the second direction do not overlap each other when viewed in the second direction.