Semiconductor device

Abstract

This semiconductor device comprises: a switching element in which a part between a first electrode and a second electrode is controlled on / off by applying a drive voltage between a third electrode and the second electrode in a state where a potential difference is set between the first electrode and the second electrode; a first terminal conductive to the first electrode; a second terminal conductive to the second electrode; a third terminal conductive to the third electrode; and a sealing resin. The first terminal, the second terminal, and the third terminal each include portions projected from the sealing resin. The first terminal, the second terminal, and the third terminal are spaced apart from each other in a second direction. The second terminal is positioned opposite to the first terminal relative to the third terminal in the second direction.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, multiple leads, and a sealing resin. The semiconductor element is mounted on a first lead, and a collector electrode on the back surface is electrically connected to the first lead. An emitter electrode on the main surface of the semiconductor element is electrically connected to a third lead. The sealing resin covers each of the multiple leads and the semiconductor element. The first lead has a first terminal protruding from the sealing resin, and the third lead has a third terminal protruding from the sealing resin. When a high voltage (e.g., several thousand volts) is applied between the first and third terminals of the semiconductor device, discharge may occur on the surface of the sealing resin between the first and third terminals, causing a short circuit between the first and third terminals.

[0003] JP 2018-14490 A

[0004] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can achieve a high withstand voltage.

[0005] A first aspect of the present disclosure provides a semiconductor device comprising: a switching element having a first electrode, a second electrode, and a third electrode, wherein the first electrode and the second electrode are turned on / off by applying a drive voltage between the third electrode and the second electrode while a potential difference is applied between the first electrode and the second electrode; a base on which the switching element is mounted; a first lead having a first terminal electrically connected to the first electrode; a second lead having a second terminal electrically connected to the second electrode; a third lead having a third terminal electrically connected to the third electrode; and a sealing resin covering the switching element and a portion of each of the first terminal, the second terminal, and the third terminal. The first terminal, the second terminal, and the third terminal each include a portion protruding from the sealing resin to one side in a first direction perpendicular to the thickness direction of the base. The first terminal, the second terminal, and the third terminal are arranged spaced apart from each other in a second direction perpendicular to both the thickness direction and the first direction. The second terminal is located on the opposite side of the first terminal relative to the third terminal in the second direction.

[0006] According to the above configuration, the semiconductor device can be made to withstand a high voltage.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure, seen through a sealing resin. FIG. 3 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 4 is a front view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 2. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a perspective view showing a semiconductor device according to a first modified example of the first embodiment. FIG. 9 is a bottom view showing a semiconductor device according to the first modified example of the first embodiment. FIG. 10 is a cross-sectional view showing a semiconductor device according to the first modified example of the first embodiment. FIG. 11 is a front view showing a semiconductor device according to the first modified example of the first embodiment. FIG. 12 is a perspective view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 13 is a plan view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 14 is a front view showing a semiconductor device according to a second modified example of the first embodiment. FIG. 15 is a perspective view showing a semiconductor device according to a third modified example of the first embodiment. FIG. 16 is a plan view showing a semiconductor device according to a third modified example of the first embodiment, seen through the sealing resin. FIG. 17 is a front view showing a semiconductor device according to a third modified example of the first embodiment. FIG. 18 is a plan view showing a semiconductor device according to a fourth modified example of the first embodiment, seen through the sealing resin. FIG. 19 is a front view showing a semiconductor device according to a fourth modified example of the first embodiment. FIG. 20 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 21 is a plan view showing a semiconductor device according to the second embodiment of the present disclosure, seen through the sealing resin. FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 21. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 21. FIG. 24 is a perspective view showing a semiconductor device according to a third embodiment of the present disclosure. FIG. 25 is a plan view showing a semiconductor device according to a third embodiment of the present disclosure, seen through the sealing resin. FIG. 26 is a front view showing a semiconductor device according to the third embodiment of the present disclosure. 27 is a plan view showing a semiconductor device according to a first modification of the third embodiment, seen through a sealing resin, and FIG. 28 is a front view showing the semiconductor device according to the first modification of the third embodiment.

[0009] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 7, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a first lead 1, a second lead 2, a third lead 3, a switching element 6, a first conductive member 71, a second conductive member 72, and a sealing resin 8.

[0013] FIG. 1 is a perspective view of the semiconductor device A10. FIG. 2 is a plan view of the semiconductor device A10, seen through the sealing resin 8. FIG. 3 is a bottom view of the semiconductor device A10. FIG. 4 is a front view of the semiconductor device A10. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 2. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. In FIG. 2, the outline of the sealing resin 8 seen through is shown by an imaginary line (chain double-dashed line).

[0014] The semiconductor device A10 shown in these figures is a device that is mounted on a circuit board of various devices. The use and function of the semiconductor device A10 are not limited. The package format of the semiconductor device A10 is a SIP (Single Inline Package). The package format of the semiconductor device A10 is not limited to SIP.

[0015] In describing the semiconductor device A10, three mutually orthogonal directions (x direction, y direction, and z direction) will be referred to as appropriate. As an example, the x direction will be referred to below as the "first direction x," the y direction as the "second direction y," and the z direction as the "thickness direction z," but the present disclosure is not limited to these. The thickness direction z corresponds to the thickness direction of the semiconductor device A10 (more specifically, for example, the sealing resin 8). The first direction x corresponds, for example, to the up-down direction in FIG. 2. The second direction y corresponds, for example, to the left-right direction in FIG. 2. When viewed in the thickness direction z (also referred to as a "planar view"), the shape of the sealing resin 8 is rectangular. The dimensions of the semiconductor device A10 are not particularly limited.

[0016] The first lead 1, the second lead 2, and the third lead 3 are electrically connected to the switching element 6 and form a conductive path between the switching element 6 and the circuit wiring when the semiconductor device A10 is mounted on a circuit board. The first lead 1, the second lead 2, and the third lead 3 are formed, for example, by subjecting a metal plate (lead frame) to punching, bending, or the like. The constituent materials of the first lead 1, the second lead 2, and the third lead 3 are not particularly limited and may be, for example, either Cu (copper) or Ni (nickel), or an alloy thereof.

[0017] The first lead 1 supports the switching element 6 and is electrically connected to the switching element 6. The first lead 1 includes a base 110 and a first terminal 120.

[0018] The base 110 is a portion on which the switching element 6 is mounted, and is rectangular (or approximately rectangular) when viewed in the thickness direction z. The base 110 has a first main surface 111, a first back surface 112, a base end surface 114, and a base through-hole 113. The first main surface 111 and the first back surface 112 face opposite each other in the thickness direction z. The first main surface 111 faces the z1 side in the thickness direction z. The switching element 6 is bonded to the first main surface 111. The first back surface 112 faces the z2 side in the thickness direction z. The first back surface 112 is exposed from the sealing resin 8 and serves as a back surface terminal. The base end surface 114 is connected to the first main surface 111 and the first back surface 112 and faces the x1 side in the first direction x. As shown in Figure 7, the base through-hole 113 is a hole that extends parallel to the thickness direction z from the first main surface 111 to the first back surface 112. The base through-hole 113 is disposed at the center of the base 110 in the second direction y and toward the x2 side in the first direction x (toward the upper side in Figures 2 and 3), and has a circular shape as seen in the thickness direction z. The base through-hole 113 is separated from the switching element 6 as seen in the thickness direction z. The position and shape of the base through-hole 113 are not limited.

[0019] The first terminal 120 is connected to the base 110 and is electrically connected to the switching element 6 via the base 110. As shown in FIG. 2 , the first dimension L1, which is the width dimension (dimension in the second direction y) of the first terminal 120, is smaller than the width dimension (dimension in the second direction y) of the base 110. In the illustrated example, the thickness direction of the first terminal 120 coincides with the thickness direction z, and the second direction y, which is perpendicular to both the thickness direction (thickness direction z) and the first direction x, corresponds to the width direction of the first terminal 120. The first terminal 120 has a first surface 121 and a second surface 122. The first surface 121 and the second surface 122 are surfaces facing the thickness direction of the first terminal 120 and facing opposite each other. In this embodiment, as shown in FIG. 5 , the first surface 121 faces the z1 side in the thickness direction z, and the second surface 122 faces the z2 side in the thickness direction z. 5 , the thickness dimension (dimension in the thickness direction z) of the first terminal 120 is smaller than the thickness dimension (dimension in the thickness direction z) of the base 110. In other words, the thickness dimension of the base 110 is larger than the thickness dimension of the first terminal 120.

[0020] The first terminal 120 is connected to the base end surface 114 of the base portion 110. More specifically, the first terminal 120 is connected to the base end surface 114 (and thus to the base portion 110) at an end portion of the base end surface 114 on the y1 side in the second direction y as shown in FIG. 2 and at an end portion of the base end surface 114 on the z1 side in the thickness direction z as shown in FIG. 5. The first terminal 120 extends in the first direction x and includes a portion that protrudes from the sealing resin 8. As shown in FIG. 2, the first terminal 120 includes a base end portion and a tip end portion. The base end portion extends from a position connected to the base portion 110 to a position that protrudes a short distance beyond the sealing resin 8. The base end portion has a larger width than the tip end portion.

[0021] In the semiconductor device A10, the first terminal 120 includes a first orthogonal portion 123 and a first connecting portion 124. The first orthogonal portion 123 is a portion extending straight along the first direction x and includes a portion covered with the sealing resin 8 and a portion protruding from the sealing resin 8. The first connecting portion 124 is a portion connecting the first orthogonal portion 123 and the base 110 and is connected to the first orthogonal portion 123 and the base 110. As shown in FIG. 5 , the first connecting portion 124 is entirely covered with the sealing resin 8 and is inclined with respect to the base 110 and the first orthogonal portion 123. The first orthogonal portion 123 has a first surface 121 (a surface facing the z1 side in the thickness direction z) facing the same side as the first main surface 111, and is located on the z1 side in the thickness direction z with respect to the first main surface 111. Therefore, the first connecting portion 124 is inclined so that the x1 side in the first direction x is closer to the z1 side in the thickness direction z. The shape of the first lead 1 is not limited to the above. For example, in order to prevent the first lead 1 from falling out of the sealing resin 8 to the z2 side in the thickness direction z, the base 110 may have a back-side recess formed around the periphery of the first back surface 112 that is recessed from the first back surface 112 to the first main surface 111 and covered by the sealing resin 8.

[0022] The third lead 3 is electrically connected to the switching element 6. The third lead 3 is disposed spaced apart from the first lead 1. As shown in FIG. 2 , the third lead 3 is disposed on the x1 side in the first direction x of the base 110 of the first lead 1, and at the center of the base 110 in the second direction y of the base 110. The third lead 3 is disposed on the y2 side in the second direction y with respect to the first terminal 120. The third lead 3 includes a third pad 310 and a third terminal 320.

[0023] The third pad 310 is a portion to which the second conductive member 72 is bonded, and has a rectangular shape (or a substantially rectangular shape) that is longer in the second direction y when viewed in the thickness direction z. As shown in FIGS. 2 and 7 , the third pad 310 has a pad main surface 311 and a pad back surface 312. The pad main surface 311 and the pad back surface 312 face opposite each other in the thickness direction z. The pad main surface 311 faces the z1 side in the thickness direction z. An end of the second conductive member 72 is bonded to the pad main surface 311. The pad back surface 312 faces the z2 side in the thickness direction z. The third pad 310 is entirely covered with sealing resin 8.

[0024] The third terminal 320 is connected to the third pad 310 and is electrically connected to the switching element 6 via the third pad 310 and the second conductive member 72. As shown in FIG. 2 , the width of the third terminal 320 (dimension in the second direction y) is smaller than the width of the third pad 310 (dimension in the second direction y). As shown in FIG. 7 , the thickness of the third terminal 320 (dimension in the thickness direction z) is the same as the thickness of the third pad 310 (dimension in the thickness direction z), which is the same as the thickness of the first terminal 120. As shown in FIG. 2 , the third terminal 320 is disposed on the x1 side in the first direction x and at the center in the second direction y with respect to the third pad 310. The third terminal 320 is disposed on the y2 side in the second direction y with respect to the first terminal 120.

[0025] The third terminal 320 has a fifth surface 321 and a sixth surface 322. The fifth surface 321 and the sixth surface 322 are surfaces facing in the thickness direction of the third terminal 320 and face opposite each other. As shown in FIG. 7 , the fifth surface 321 faces the z1 side in the thickness direction z, and the sixth surface 322 faces the z2 side in the thickness direction z. The third terminal 320 extends in the first direction x and includes a portion that protrudes from the sealing resin 8. The third terminal 320 has a width larger than that of the tip portion from the position connected to the third pad 310 to a position that protrudes a short distance beyond the sealing resin 8. The shape of the third lead 3 is not limited to the above.

[0026] The second lead 2 is electrically connected to the switching element 6. The second lead 2 is disposed apart from the first lead 1 and the second lead 2. As shown in FIG. 2 , the second lead 2 is disposed on the x1 side in the first direction x of the base 110 of the first lead 1, at a position corresponding to the end of the first terminal 120 on the y2 side in the second direction y in the second direction y. In this embodiment, as shown in FIGS. 4 , 6 , and 7 , the second lead 2 and the third lead 3 are located at the same position in the thickness direction z. The second lead 2 includes a second pad 210 and a second terminal 220.

[0027] The second pad 210 is a portion to which the first conductive member 71 is bonded, and has a rectangular shape (or a substantially rectangular shape) that is longer in the second direction y when viewed in the thickness direction z. As shown in FIGS. 2 and 6 , the second pad 210 has a pad main surface 211 and a pad back surface 212. The pad main surface 211 and the pad back surface 212 face opposite each other in the thickness direction z. The pad main surface 211 faces the z1 side in the thickness direction z. An end of the first conductive member 71 is bonded to the pad main surface 211. The pad back surface 212 faces the z2 side in the thickness direction z. The second pad 210 is entirely covered with sealing resin 8.

[0028] The second terminal 220 is connected to the second pad 210 and is electrically connected to the switching element 6 via the second pad 210 and the first conductive member 71. As shown in FIG. 2 , the width of the second terminal 220 (dimension in the second direction y) is smaller than the width of the second pad 210 (dimension in the second direction y). As shown in FIG. 6 , the thickness of the second terminal 220 (dimension in the thickness direction z) is the same as the thickness of the second pad 210 (dimension in the thickness direction z), and is the same as the thickness of the first terminal 120. As shown in FIG. 2 , the second terminal 220 is disposed on the x1 side in the first direction x and in the center in the second direction y with respect to the second pad 210. The second terminal 220 is located on the y2 side in the second direction y with respect to the third terminal 320. The second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y.

[0029] The second terminal 220 has a third surface 221 and a fourth surface 222. The third surface 221 and the fourth surface 222 are surfaces facing in the thickness direction of the second terminal 220 and face opposite each other. As shown in FIG. 6 , the third surface 221 faces the z1 side in the thickness direction z, and the fourth surface 222 faces the z2 side in the thickness direction z. The second terminal 220 extends in the first direction x and includes a portion that protrudes from the sealing resin 8. The width of the second terminal 220 is larger from the position connected to the second pad 210 to a position that protrudes a short distance beyond the sealing resin 8 than the tip portion. The shape of the second lead 2 is not limited to the above.

[0030] 2 , the portions of the first terminal 120, the second terminal 220, and the third terminal 320 that are exposed from the sealing resin 8 have the same shape. The tip of the first terminal 120 (the end on the x1 side in the first direction x opposite to the portion connected to the base 110), the tip of the second terminal 220 (the end on the x1 side in the first direction x opposite to the portion connected to the second pad 210), and the tip of the third terminal 320 (the end on the x1 side in the first direction x opposite to the portion connected to the third pad 310) are located at the same position in the first direction x.

[0031] 2 , the second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. A first distance D1, which is the distance between the first terminal 120 and the second terminal 220 in the second direction y, is larger than the dimension (first dimension L1) of the first terminal 120 in the width direction. For example, the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y is 3 to 11 times the dimension (first dimension L1) of the first terminal 120 in the width direction.

[0032] An outer plating layer made of, for example, an alloy mainly composed of Sn may be formed on the portions of the first lead 1, the second lead 2, and the third lead 3 that are exposed from the sealing resin 8. An inner plating layer made of, for example, Ag may be formed on a region of the first main surface 111 of the first lead 1 to which the switching element 6 is bonded, a region of the pad main surface 211 of the second lead 2 to which the first conductive member 71 is bonded, and a region of the pad main surface 311 of the third lead 3 to which the second conductive member 72 is bonded.

[0033] The switching element 6 is an element that realizes the switching function to be performed by the semiconductor device A10. The type of the switching element 6 is not particularly limited. In this embodiment, the switching element 6 is a transistor such as a metal-oxide-semiconductor field-effect transistor (MOSFET). The switching element 6 includes an element body 60, a first electrode 63, a second electrode 64, and a third electrode 65.

[0034] The element body 60 is plate-shaped and rectangular in the thickness direction z. The element body 60 is made of a semiconductor material, and in this embodiment, is made of Si (silicon). The material of the element body 60 is not limited and may be other materials such as SiC (silicon carbide) or GaN (gallium nitride). The element body 60 has a primary surface 61 and a rear surface 62. The primary surface 61 and the rear surface 62 face opposite each other in the thickness direction z. The primary surface 61 faces the z1 side in the thickness direction z. The rear surface 62 faces the z2 side in the thickness direction z. A second electrode 64 and a third electrode 65 are disposed on the primary surface 61. A first electrode 63 is disposed on the rear surface 62. In this embodiment, the first electrode 63 is a drain electrode, the second electrode 64 is a source electrode, and the third electrode 65 is a gate electrode. The second electrode 64 is larger than the third electrode 65. The switching element 6 controls the on / off of the first electrode 63 (drain electrode) and the second electrode 64 (source electrode) by applying a drive voltage to the third electrode 65 (gate electrode) and the second electrode 64 (source electrode) while applying a potential difference between the first electrode 63 (drain electrode) and the second electrode 64 (source electrode).

[0035] As shown in FIG. 2 , the switching element 6 is mounted at the center of the first main surface 111 in the second direction y, toward the x1 side in the first direction x. The switching element 6 is positioned so as not to overlap the base through-hole 113 in the thickness direction z. As shown in FIGS. 6 and 7 , the switching element 6 is bonded to the first main surface 111 via a bonding material 69, with the element back surface 62 facing toward the first main surface 111. In this embodiment, the bonding material 69 is a conductive bonding material, such as solder. The bonding material 69 may also be other conductive bonding materials, such as silver paste or a sintered silver bonding material. The first electrode 63 of the switching element 6 is bonded to the first main surface 111 by the bonding material 69 and electrically connected to the first lead 1.

[0036] The first conductive member 71 is bonded to the second electrode 64 of the switching element 6 and the pad main surface 211 of the second lead 2. The second electrode 64 of the switching element 6 is electrically connected to the second lead 2. The second conductive member 72 is bonded to the third electrode 65 of the switching element 6 and the pad main surface 311 of the third lead 3. The third electrode 65 of the switching element 6 is electrically connected to the third lead 3. In this embodiment, the first conductive member 71 and the second conductive member 72 are, for example, wires (bonding wires). The material, thickness, and number of the first conductive member 71 and the second conductive member 72 are not limited. In the illustrated example, a plurality (three) of first conductive members 71 are bonded to the second electrode 64 and the pad main surface 211. The first conductive member 71 connecting the switching element 6 and the second lead 2, and the second conductive member 72 connecting the switching element 6 and the third lead 3 may be made of a conductive material other than a wire (for example, a metal plate or a metal ribbon).

[0037] The first terminal 120 of the first lead 1, which is electrically connected to the first electrode 63, functions as the drain terminal of the semiconductor device A10, the second terminal 220 of the second lead 2, which is electrically connected to the second electrode 64, functions as the source terminal of the semiconductor device A10, and the third terminal 320 of the third lead 3, which is electrically connected to the third electrode 65, functions as the gate terminal of the semiconductor device A10. A high voltage is applied from the outside between the first terminal 120 (drain terminal) and the second terminal 220 (source terminal). The potential difference between the first terminal 120 (drain terminal) and the third terminal 320 (gate terminal) also increases in accordance with the applied high voltage.

[0038] The sealing resin 8 covers parts of the first lead 1, the second lead 2, and the third lead 3, as well as the entire switching element 6, the first conductive member 71, and the second conductive member 72. The sealing resin 8 is made of, for example, a black epoxy resin. There are no limitations on the material of the sealing resin 8. The sealing resin 8 is formed, for example, by transfer molding using a mold.

[0039] The sealing resin 8 has a resin main surface 81, a resin back surface 82, a resin end surface 83, a first resin side surface 84, a second resin side surface 85, and a third resin side surface 86. The resin main surface 81 and the resin back surface 82 face opposite each other in the thickness direction z. The resin main surface 81 faces the z1 side in the thickness direction z, and the resin back surface 82 faces the z2 side in the thickness direction z. As shown in FIGS. 3 and 5 to 7 , the first back surface 112 of the first lead 1 is exposed from the resin back surface 82 over its entirety, and the resin back surface 82 and the first back surface 112 are flush with each other.

[0040] The resin end surface 83 and the first resin side surface 84 are surfaces connected to the resin main surface 81 and the resin back surface 82, respectively. The resin end surface 83 and the first resin side surface 84 face opposite each other in the first direction x. The resin end surface 83 is a surface located on the x1 side of the first direction x and facing the x1 side of the first direction x. The first resin side surface 84 is a surface located on the x2 side of the first direction x and facing the x2 side of the first direction x. The second resin side surface 85 and the third resin side surface 86 are surfaces connected to the resin main surface 81, the resin back surface 82, the resin end surface 83, and the first resin side surface 84, respectively. The second resin side surface 85 and the third resin side surface 86 face opposite each other in the second direction y. The second resin side surface 85 is a surface located on the y1 side of the second direction y and facing the y1 side of the second direction y. The third resin side surface 86 is a surface that is disposed on the y2 side in the second direction y and faces the y2 side in the second direction y.

[0041] The resin end surface 83, the first resin side surface 84, the second resin side surface 85, and the third resin side surface 86 each have a surface that is connected to the resin main surface 81 and inclined so as to approach each other toward the resin main surface 81. The portions of the sealing resin 8 that are connected to these inclined surfaces and surrounded by the resin main surface 81 have a tapered shape in which the cross-sectional area in the xy plane decreases toward the resin main surface 81. The resin end surface 83, the first resin side surface 84, the second resin side surface 85, and the third resin side surface 86 each have a surface that is connected to the resin rear surface 82 and inclined so as to approach each other toward the resin rear surface 82. The portions of the sealing resin 8 that are connected to these inclined surfaces and surrounded by the resin main surface 81 have a tapered shape in which the cross-sectional area in the xy plane decreases toward the resin rear surface 82. The shapes of the resin end surface 83, the first resin side surface 84, the second resin side surface 85, and the third resin side surface 86 are not limited.

[0042] The resin end surface 83 is a surface facing the direction in which the first terminal 120, the second terminal 220, and the third terminal 320 protrude. The first terminal 120, the second terminal 220, and the third terminal 320 protrude from the resin end surface 83. As shown in FIG. 4 , the first terminal 120, the third terminal 320, and the second terminal 220 are spaced apart from one another in the second direction y and are arranged in this order from the y1 side in the second direction y to the y2 side in the second direction y. The second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. With this terminal arrangement, the ratio of the distance between the first terminal 120 and the second terminal 220 in the second direction y (first distance D1) to the dimension between the second resin side surface 85 and the third resin side surface 86 of the sealing resin 8 in the second direction y (second dimension L2) is large. For example, the ratio of the distance between the first terminal 120 and the second terminal 220 in the second direction y (first distance D1) to the dimension in the second direction y between the second resin side surface 85 and the third resin side surface 86 of the sealing resin 8 (second dimension L2) is 20% to 85%. The first terminal 120, the second terminal 220, and the third terminal 320 are arranged at the same position in the thickness direction z on the resin end surface 83.

[0043] In this embodiment, the sealing resin 8 includes a resin through hole 89. The resin through hole 89 is a through hole extending parallel to the thickness direction z from the resin main surface 81 to the resin back surface 82. The resin through hole 89 is disposed at the center of the sealing resin 8 in the second direction y and toward the x2 side in the first direction x (toward the upper side in FIG. 2 ), and has a circular shape when viewed in the thickness direction z. In this embodiment, the center of the resin through hole 89 is coincident with the center of the base through hole 113. The diameter of the resin through hole 89 is smaller than the diameter of the base through hole 113. As shown in FIGS. 2 , 3 , and 7 , the resin through hole 89 is located inside the base through hole 113, and the hole wall of the resin through hole 89 is entirely formed by the sealing resin 8. The base 110 is not exposed through the hole wall of the resin through hole 89. The resin through hole 89 is used, for example, to attach a heat dissipation member to the semiconductor device A10 by inserting a fastening member such as a screw therethrough. The first rear surface 112 is connected to a heat dissipation member via an electrical insulating sheet or the like, so that heat generated from the switching element 6 is dissipated via the base 110 and the heat dissipation member.

[0044] Next, the effects of the semiconductor device A10 will be described.

[0045] In the semiconductor device A10, the first lead 1 includes a first terminal 120, the second lead 2 includes a second terminal 220, and the third lead 3 includes a third terminal 320. The first terminal 120, the second terminal 220, and the third terminal 320 each protrude from a resin end surface 83 (sealing resin 8) toward the x1 side in the first direction x. The first terminal 120, the second terminal 220, and the third terminal 320 are arranged spaced apart from one another in the second direction y. The second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. This terminal arrangement allows the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y to be increased. Specifically, the distance between the first terminal 120 and the second terminal 220 in the second direction y (first distance D1) is 3 to 11 times the widthwise dimension of the first terminal 120 (first dimension L1). The ratio of the distance between the first terminal 120 and the second terminal 220 in the second direction y (first distance D1) to the dimension between the second resin side surface 85 and the third resin side surface 86 of the sealing resin 8 in the second direction y (second dimension L2) is 20% to 85%. With the above configuration, as shown in FIG. 4 , it is possible to ensure a sufficiently large creepage distance Dc, which is the shortest distance along the surface of the sealing resin 8 between the point where the first terminal 120 protrudes from the sealing resin 8 and the point where the second terminal 220 protrudes from the sealing resin 8, compared to when the first terminal 120 and the second terminal 220 are disposed adjacent to each other in the second direction y. As a result, the semiconductor device A10 can suppress discharge at the resin end surface 83 even when a high voltage is applied between the first terminal 120 and the second terminal 220. Therefore, the semiconductor device A10 of this embodiment can achieve a high withstand voltage.

[0046] According to this embodiment, the pad rear surface 212 is exposed from the resin rear surface 82. The semiconductor device A10 can dissipate heat emitted by the switching element 6 by connecting a heat dissipation member to the pad rear surface 212. The sealing resin 8 has resin through-holes 89 extending parallel to the thickness direction z. The semiconductor device A10 can easily attach a heat dissipation member by inserting a fastening member such as a screw through the resin through-hole 89. The center of the resin through-hole 89 is coincident with the center of the base through-hole 113, and the diameter of the resin through-hole 89 is smaller than the diameter of the base through-hole 113. The resin through-hole 89 is located inside the base through-hole 113, and the hole wall of the resin through-hole 89 is entirely formed by the sealing resin 8. The base 110 is not exposed from the hole wall of the resin through-hole 89. This insulates the base 110 from the fastening member. According to this embodiment, the thickness of the base 110 is greater than the thicknesses of the first terminal 120, the second lead 2, and the third lead 3. In the semiconductor device A10, the heat emitted by the switching element 6 can be efficiently absorbed by the base portion 110.

[0047] In the present embodiment, the case where the base 110 includes the base through-hole 113 and the sealing resin 8 includes the resin through-hole 89 has been described, but the present disclosure is not limited to this. The base 110 does not have to include the base through-hole 113, and the sealing resin 8 does not have to include the resin through-hole 89. This also applies to other embodiments and modified examples described below.

[0048] 8 to 19 show modified examples of the semiconductor device A10 according to the first embodiment. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and redundant explanations will be omitted.

[0049] First Modification: Figures 8 to 11 show a semiconductor device A11 according to a first modification of the first embodiment. Figure 8 is a perspective view of the semiconductor device A11. Figure 9 is a bottom view of the semiconductor device A11, corresponding to Figure 3. Figure 10 is a cross-sectional view of the semiconductor device A11, corresponding to Figure 5. Figure 11 is a front view of the semiconductor device A11.

[0050] The semiconductor device A11 differs from the semiconductor device A10 of the above embodiment in the configuration of the first lead 1. In the semiconductor device A11, the entire first terminal 120 extends straight along the first direction x. The position at which the first terminal 120 protrudes from the resin end surface 83 is on the z2 side in the thickness direction z compared to the semiconductor device A10. The position of the first terminal 120 in the thickness direction z is different from the positions of the second terminal 220 and the third terminal 320 in the thickness direction z. The first terminal 120, the second terminal 220, and the third terminal 320 are spaced apart from each other in the thickness direction z. In the semiconductor device A11, the first back surface 112 of the base 110 is not exposed from the resin back surface 82 and is covered by the sealing resin 8.

[0051] 8 and 11 , in the semiconductor device A11 of this modification, the position at which the first terminal 120 protrudes from the resin end surface 83 is on the z2 side in the thickness direction z relative to the position at which the second terminal 220 protrudes from the resin end surface 83. In the semiconductor device A11, the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be made longer than in the semiconductor device A10. This makes it possible to increase the withstand voltage of the semiconductor device A11.

[0052] 12 to 14 show a semiconductor device A12 according to a second modification of the first embodiment. Fig. 12 is a perspective view of the semiconductor device A12. Fig. 13 is a plan view of the semiconductor device A12. Fig. 14 is a front view of the semiconductor device A12.

[0053] The semiconductor device A12 differs from the semiconductor device A10 of the above embodiment in the configuration of the sealing resin 8. In the semiconductor device A12, the sealing resin 8 has a first convex portion 87 and a second convex portion 88. The first convex portion 87 and the second convex portion 88 each protrude from the resin end surface 83 toward the x1 side in the first direction x. The first convex portion 87 is provided at a position corresponding to the first terminal 120, and the first terminal 120 protrudes from the first convex portion 87. The second convex portion 88 is provided at a position corresponding to the second terminal 220, and the second terminal 220 protrudes from the second convex portion 88.

[0054] 13 and 14, according to the semiconductor device A12 of this modification, the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be made longer than that of the semiconductor device A10. This makes it possible to increase the withstand voltage of the semiconductor device A12.

[0055] Third Modification: Figures 15 to 17 show a semiconductor device A13 according to a third modification of the first embodiment. Figure 15 is a perspective view of the semiconductor device A13. Figure 16 is a plan view of the semiconductor device A13, corresponding to Figure 2. In Figure 16, for ease of understanding, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. Figure 17 is a front view of the semiconductor device A13.

[0056] The semiconductor device A13 differs from the semiconductor device A11 of the above-described modification mainly in the configuration of the first terminal 120 in the first lead 1. In the semiconductor device A13, the first terminal 120 has a first twisted portion 125. The first twisted portion 125 is a portion of the first terminal 120 that is twisted 90 degrees around the first direction x, which is the longitudinal direction of the first terminal 120, at a portion of the first terminal 120 covered with the sealing resin 8. In this modification, the first twisted portion 125 of the first terminal 120 causes the first surface 121 and the second surface 122 of the portion of the first terminal 120 that is exposed from the sealing resin 8 to face both sides in the second direction y. In FIG. 17 , the first terminal 120 without the first twisted portion 125 is represented by an imaginary line (two-dot chain line).

[0057] 17, according to the semiconductor device A13 of this modification, the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be made longer than in the semiconductor devices A10 and A11. This makes it possible to increase the withstand voltage of the semiconductor device A13.

[0058] 18 and 19 show a semiconductor device A14 according to a fourth modification of the first embodiment. Fig. 18 is a plan view of the semiconductor device A14 and corresponds to Fig. 2. In Fig. 18, for ease of understanding, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. Fig. 19 is a front view of the semiconductor device A14.

[0059] The semiconductor device A14 differs from the semiconductor device A13 of the above-described modified example in the configuration of the second terminal 220 in the second lead 2. In the semiconductor device A14, in addition to the first terminal 120 having the first twist portion 125, the second terminal 220 has a second twist portion 223. The second twist portion 223 is a portion of the second terminal 220 that is twisted 90 degrees around the first direction x, which is the longitudinal direction of the second terminal 220, in a portion of the second terminal 220 that is covered with the sealing resin 8. In this modified example, since the second terminal 220 has the second twist portion 223, the third surface 221 and the fourth surface 222 face on both sides of the second direction y in the portion of the second terminal 220 that is exposed from the sealing resin 8. In Figure 19, the first terminal 120 when the first terminal 120 does not have the first twist portion 125 and the second terminal 220 when the second terminal 220 does not have the second twist portion 223 are represented by imaginary lines (dash-dotted lines).

[0060] 19, according to the semiconductor device A14 of this modification, the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be made longer than that of the semiconductor device A13. This makes it possible to increase the withstand voltage of the semiconductor device A14.

[0061] 20 to 26 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and redundant explanations will be omitted.

[0062] Second Embodiment: Figures 20 to 23 show a semiconductor device A20 according to a second embodiment of the present disclosure. Figure 20 is a plan view of the semiconductor device A20. Figure 21 is a plan view of the semiconductor device A20, seen through the sealing resin 8. In Figure 21, for ease of understanding, the outline of the sealing resin 8 seen through is shown by an imaginary line (two-dot chain line). Figure 22 is a cross-sectional view taken along line XXII-XXII in Figure 21. Figure 23 is a cross-sectional view taken along line XXIII-XXIII in Figure 21.

[0063] The semiconductor device A20 of this embodiment has a surface-mount package structure. The first lead 1 includes a base 110, a first terminal 120, and an extending portion 130. The extending portion 130 is connected to the base 110. The extending portion 130 is located on the opposite side of the base 110 from the first terminal 120 in the first direction x. The extending portion 130 extends from the base 110 toward the x2 side in the first direction x and protrudes from the first resin side surface 84 of the sealing resin 8 toward the x2 side in the first direction x.

[0064] In the present embodiment, the first terminal 120, the second terminal 220, and the third terminal 320 each have a bent portion exposed from the sealing resin 8. In each of the first terminal 120, the second terminal 220, and the third terminal 320, the tip portion on the x1 side in the first direction x is located on the z2 side in the thickness direction z of the portion protruding from the sealing resin 8 (resin end surface 83).

[0065] In this embodiment, the first terminal 120, the second terminal 220, and the third terminal 320 each protrude from the resin end surface 83 (sealing resin 8) toward the x1 side in the first direction x. The second terminal 220 is located on the opposite side of the first terminal 120 relative to the third terminal 320 in the second direction y. This terminal arrangement allows the distance between the first terminal 120 and the second terminal 220 in the second direction y (first distance D1) to be increased. This configuration allows the creepage distance between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 to be sufficiently large compared to when the first terminal 120 and the second terminal 220 are located adjacent to each other in the second direction y. This allows the semiconductor device A20 to achieve a high withstand voltage. The semiconductor device A20, having a common configuration with the semiconductor device A10, achieves the same effects as the semiconductor device A10.

[0066] 24 to 26 show a semiconductor device A30 according to a third embodiment of the present disclosure. FIG. 24 is a perspective view of the semiconductor device A30. FIG. 25 is a plan view of the semiconductor device A30, corresponding to FIG. 2. In FIG. 25, for ease of understanding, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. FIG. 26 is a front view of the semiconductor device A30.

[0067] The semiconductor device A30 of this embodiment further includes a fourth lead 4 and a third conductive member 73. The fourth lead 4 is electrically connected to the switching element 6. As shown in FIG. 25 , the fourth lead 4 is disposed spaced apart from the first lead 1, the second lead 2, and the third lead 3. The fourth lead 4 is disposed on the x1 side of the base 110 of the first lead 1 in the first direction x, and between the second lead 2 and the third lead 3 in the second direction y. As shown in FIG. 26 , in this embodiment, the position of the fourth lead 4 in the thickness direction z is the same as that of the second lead 2 and the third lead 3. The fourth lead 4 includes a fourth pad 410 and a fourth terminal 420.

[0068] The fourth pad 410 is a portion to which the third conductive member 73 is bonded, and has a rectangular shape (or a substantially rectangular shape) that is long in the second direction y when viewed in the thickness direction z. The fourth pad 410 has a pad main surface 411. The pad main surface 411 faces the z1 side in the thickness direction z, and the third conductive member 73 is bonded to it. In the illustrated example, the third conductive member 73 is a wire (bonding wire). The material, thickness, and number of the third conductive member 73 are not limited. The fourth pad 410 is entirely covered with sealing resin 8.

[0069] The fourth terminal 420 is connected to the fourth pad 410 and is electrically connected to the second electrode 64 (source electrode) of the switching element 6 via the fourth pad 410 and the third conductive member 73. The fourth terminal 420 functions as a source sense terminal of the semiconductor device A30. The width (dimension in the second direction y) of the fourth terminal 420 is smaller than the width (dimension in the second direction y) of the fourth pad 410. The thickness (dimension in the thickness direction z) of the fourth terminal 420 is the same as the thickness (dimension in the thickness direction z) of the fourth pad 410 and the same as the thickness of the first terminal 120. As shown in FIG. 25 , the fourth terminal 420 is disposed on the x1 side of the fourth pad 410 in the first direction x and at the center in the second direction y. The fourth terminal 420 extends in the first direction x and includes a portion protruding from the sealing resin 8. The shape of the fourth lead 4 is not limited to that described above.

[0070] 26 , the first terminal 120, the third terminal 320, the fourth terminal 420, and the second terminal 220 are spaced apart from one another in the second direction y on the resin end surface 83 and are arranged in this order from the y1 side in the second direction y to the y2 side in the second direction y. The first terminal 120 and the second terminal 220 are located on the outermost sides opposite one another in the second direction y among the first terminal 120, the second terminal 220, the third terminal 320, and the fourth terminal 420. The first terminal 120, the second terminal 220, the third terminal 320, and the fourth terminal 420 are arranged at the same position in the thickness direction z on the resin end surface 83.

[0071] In this embodiment, the second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. In this embodiment, the first terminal 120 and the second terminal 220 are located at the outermost positions, opposite each other, among the first terminals 120 to the fourth terminals 420 in the second direction y. This terminal arrangement allows the distance between the first terminal 120 and the second terminal 220 in the second direction y (first distance D1) to be increased. With the above configuration, as shown in FIG. 26 , the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be ensured to be sufficiently large compared to when the first terminal 120 and the second terminal 220 are located adjacent to each other in the second direction y. This allows the semiconductor device A30 to achieve a high withstand voltage. The semiconductor device A30, having a configuration common to the semiconductor device A10, achieves the same effects as the semiconductor device A10.

[0072] 27 and 28 show modified examples of the semiconductor device A30 according to the third embodiment. In these figures, elements that are the same as or similar to those in the third embodiment are given the same reference numerals as those in the above embodiment, and redundant explanations will be omitted.

[0073] 27 and 28 show a semiconductor device A31 according to a first modification of the third embodiment. Fig. 27 is a plan view of the semiconductor device A31 and corresponds to Fig. 2. In Fig. 27, for ease of understanding, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. Fig. 28 is a front view of the semiconductor device A31.

[0074] The semiconductor device A31 differs from the semiconductor device A30 of the above embodiment mainly in the arrangement of the second lead 2 and the fourth lead 4. In the semiconductor device A31, the arrangement of the second lead 2 and the fourth lead 4 is swapped compared to the semiconductor device A30. The fourth lead 4 is arranged on the y2 side of the second direction y relative to the second lead 2 in the second direction y. In the semiconductor device A31, as shown in FIG. 27 , the first terminal 120, the third terminal 320, the second terminal 220, and the fourth terminal 420 are spaced apart from one another in the second direction y on the resin end surface 83 and are arranged in this order from the y1 side in the second direction y to the y2 side in the second direction y.

[0075] In the semiconductor device A31, the second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. This terminal arrangement allows the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y to be increased. With this configuration, as shown in FIG. 28 , the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be ensured to be sufficiently large compared to when the first terminal 120 and the second terminal 220 are located adjacent to each other in the second direction y. This allows the semiconductor device A31 to achieve a high withstand voltage. The semiconductor device A31, having a common configuration with the semiconductor device A10, achieves the same effects as the semiconductor device A10.

[0076] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0077] The present disclosure includes embodiments described in the following appendices: Appendix 1. A semiconductor device comprising: a switching element having a first electrode, a second electrode, and a third electrode, wherein the on / off between the first electrode and the second electrode is controlled by applying a drive voltage between the third electrode and the second electrode while a potential difference is applied between the first electrode and the second electrode; a first lead having a base on which the switching element is mounted and a first terminal conducting with the first electrode; a second lead having a second terminal conducting with the second electrode; a third lead having a third terminal conducting with the third electrode; and a sealing resin covering the switching element and a portion of each of the first terminal, the second terminal, and the third terminal, wherein the first terminal, the second terminal, and the third terminal each include a portion protruding from the sealing resin to one side in a first direction orthogonal to a thickness direction of the base, the first terminal, the second terminal, and the third terminal are arranged spaced apart from each other in a second direction orthogonal to the thickness direction and the first direction, and the second terminal is located on the opposite side of the third terminal from the first terminal in the second direction. The semiconductor device according to Supplementary Note 1, wherein the first terminal has a first surface and a second surface facing opposite each other and is plate-shaped extending in the first direction, and the second terminal has a third surface and a fourth surface facing opposite each other and is plate-shaped extending in the first direction. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein the first surface and the second surface of a portion of the first terminal exposed from the sealing resin face the second direction. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein the third surface and the fourth surface of a portion of the second terminal exposed from the sealing resin face the second direction. Supplementary Note 5. The semiconductor device according to Supplementary Note 2, wherein, when a first distance is a distance between the first terminal and the second terminal in the second direction and a first dimension is a dimension of the first terminal in a plate thickness direction perpendicular to the first surface and a width direction perpendicular to the first direction, the first distance is 3 to 11 times the first dimension. Supplementary Note 6. 6. The semiconductor device according to claim 1, wherein the first terminal and the second terminal are spaced apart from each other in the thickness direction.Appendix 7. The semiconductor device according to any one of Appendixes 1 to 6, wherein the sealing resin has a resin main surface and a resin back surface facing opposite each other in the thickness direction, a resin end surface connected to the resin main surface and the resin back surface and facing one side in the first direction, a first resin side surface facing the other side in the first direction, and a second resin side surface and a third resin side surface facing opposite each other in the second direction. Appendix 8. The semiconductor device according to Appendix 7, wherein, when a dimension in the second direction between the second resin side surface and the third resin side surface is defined as a second dimension and a distance in the second direction between the first terminal and the second terminal is defined as a first distance, a ratio of the first distance to the second dimension is 20% to 85%. Appendix 9. The semiconductor device according to Appendix 7 or 8, wherein the sealing resin has a first protrusion protruding from the resin end surface to one side in the first direction, and the first terminal protruding from the first protrusion. Appendix 10. The semiconductor device according to any one of Supplementary Notes 7 to 9, wherein the sealing resin has a second convex portion protruding from the resin end surface to one side in the first direction, and the second terminal protruding from the second convex portion.Supplementary Note 11. The semiconductor device according to any one of Supplementary Notes 1 to 10, further comprising: a first conductive member conductively joined to the second electrode and the second lead; and a second conductive member conductively joined to the third electrode and the third lead, wherein the first conductive member and the second conductive member are covered with the sealing resin.Supplementary Note 12. The semiconductor device according to Supplementary Note 11, wherein the second lead is connected to the other side in the first direction with respect to the second terminal and has a first pad to which the first conductive member is conductively joined, and the third lead is connected to the other side in the first direction with respect to the third terminal and has a second pad to which the second conductive member is conductively joined.Supplementary Note 13. The semiconductor device according to any one of Supplementary Notes 1 to 12, wherein the switching element has a main surface facing one side in the thickness direction and a back surface facing the other side in the thickness direction, the first electrode is a drain electrode and is disposed on the back surface of the element, the second electrode is a source electrode and is disposed on the main surface of the element, the third electrode is a gate electrode and is disposed on the main surface of the element, the first electrode is conductively bonded to the base, and the first terminal is connected to the base. Supplementary Note 14. The semiconductor device according to any one of Supplementary Notes 1 to 13, further comprising a fourth lead having a fourth terminal electrically connected to the second electrode, the fourth terminal including a portion protruding from the sealing resin to one side in the first direction and disposed spaced apart in the second direction from the first terminal, the second terminal, and the third terminal. Supplementary Note 15. The semiconductor device according to Supplementary Note 14, wherein the first terminal and the second terminal are located at the outermost positions opposite each other in the second direction among the first terminal to the fourth terminal.

[0078] A10 to A14, A20, A30, A31: semiconductor device 1: first lead 110: base 111: first main surface 112: first back surface 113: base through-hole 114: base end surface 120: first terminal 121: first surface 122: second surface 123: first perpendicular portion 124: first connecting portion 125: first twisted portion 130: extension portion 2: second lead 210: second pad 220: second terminal 221: third surface 222: fourth surface 223: second twisted portion 3: third lead 310: third pad 311: pad main surface 312: pad back surface 321: fifth surface 322: sixth surface 4: fourth lead 410: fourth pad 411: pad main surface 412: Back surface of pad 420: Fourth terminal 6: Switching element 60: Element body 61: Element main surface 62: Element back surface 63: First electrode (drain electrode) 64: Second electrode (source electrode) 65: Third electrode (gate electrode) 69: Bonding material 69 71: First conductive member 72: Second conductive member 73: Third conductive member 8: Sealing resin 81: Resin main surface 82: Resin back surface 83: Resin end surface 84: First resin side surface 85: Second resin side surface 86: Third resin side surface 87: First convex portion 88: Second convex portion 89: Resin through hole D1: First distance Dc: Creepage distance L1: First dimension L2: Second dimension

Claims

1. a switching element having a first electrode, a second electrode, and a third electrode, wherein the first electrode and the second electrode are turned on / off by applying a drive voltage between the third electrode and the second electrode while a potential difference is applied between the first electrode and the second electrode; a first lead having a base on which the switching element is mounted and a first terminal electrically connected to the first electrode; a second lead having a second terminal electrically connected to the second electrode; a third lead having a third terminal electrically connected to the third electrode; a sealing resin that covers the switching element and a portion of each of the first terminal, the second terminal, and the third terminal, the first terminal, the second terminal, and the third terminal each include a portion protruding from the sealing resin to one side in a first direction perpendicular to a thickness direction of the base, the first terminal, the second terminal, and the third terminal are arranged to be spaced apart from one another in the thickness direction and in a second direction perpendicular to the first direction, The second terminal is located on the opposite side of the third terminal from the first terminal in the second direction.

2. the first terminal has a first surface and a second surface facing opposite to each other and is plate-shaped extending in the first direction; The semiconductor device according to claim 1 , wherein the second terminal has a third surface and a fourth surface facing in opposite directions, and is plate-shaped and extends in the first direction.

3. The semiconductor device according to claim 2 , wherein the first surface and the second surface of the portion of the first terminal exposed from the sealing resin face in the second direction.

4. The semiconductor device according to claim 3 , wherein the third surface and the fourth surface of the second terminal in a portion exposed from the sealing resin face in the second direction.

5. 3. The semiconductor device according to claim 2, wherein when a distance between the first terminal and the second terminal in the second direction is defined as a first distance, and a dimension of the first terminal in a plate thickness direction perpendicular to the first surface and a width direction perpendicular to the first direction is defined as a first dimension, the first distance is 3 to 11 times the first dimension.

6. The semiconductor device according to claim 1 , wherein the first terminal and the second terminal are spaced apart from each other in the thickness direction.

7. 7. The semiconductor device according to claim 1, wherein the sealing resin has a resin main surface and a resin back surface facing opposite each other in the thickness direction, a resin end surface connected to the resin main surface and the resin back surface and facing one side in the first direction, a first resin side surface facing the other side in the first direction, and a second resin side surface and a third resin side surface facing opposite each other in the second direction.

8. 8. The semiconductor device of claim 7, wherein when the dimension in the second direction between the second resin side surface and the third resin side surface is defined as a second dimension and the distance in the second direction between the first terminal and the second terminal is defined as a first distance, the ratio of the first distance to the second dimension is 20% to 85%.

9. the sealing resin has a first protrusion protruding from the resin end surface to one side in the first direction, The semiconductor device according to claim 7 , wherein the first terminal protrudes from the first protrusion.

10. the sealing resin has a second protrusion protruding from the resin end surface to one side in the first direction, The semiconductor device according to claim 7 , wherein the second terminal protrudes from the second protrusion.

11. a first conductive member conductively connected to the second electrode and the second lead; a second conductive member conductively connected to the third electrode and the third lead, 7. The semiconductor device according to claim 1, wherein the first conductive member and the second conductive member are covered with the sealing resin.

12. the second lead is connected to the other side of the second terminal in the first direction and has a first pad to which the first conductive member is conductively joined; 12 . The semiconductor device according to claim 11 , wherein the third lead has a second pad connected to the other side of the third terminal in the first direction and to which the second conductive member is conductively joined.

13. the switching element has a main surface facing one side in the thickness direction and a back surface facing the other side in the thickness direction, the first electrode is a drain electrode and is disposed on a rear surface of the element; the second electrode is a source electrode and is disposed on the main surface of the element; the third electrode is a gate electrode and is disposed on the main surface of the element; the first electrode is conductively bonded to the base; 7. The semiconductor device according to claim 1, wherein the first terminal is connected to the base portion.

14. a fourth lead having a fourth terminal in electrical communication with the second electrode; 7. The semiconductor device according to claim 1, wherein the fourth terminal includes a portion that protrudes from the sealing resin to one side in the first direction, and is arranged spaced apart in the second direction from the first terminal, the second terminal, and the third terminal.

15. 15. The semiconductor device according to claim 14, wherein said first terminal and said second terminal are located at outermost positions opposite to each other in said second direction among said first terminal to said fourth terminal.