Insulator, insulator-equipped charged particle gun, insulator-equipped charged particle beam device, and insulator manufacturing method

Abstract

The present invention provides an insulator and the like capable of withstanding an acceleration voltage of 100,000 electron volts or more without using an acceleration tube having a multi-stage structure. An insulator 1 comprises: an insulation member 10; a cathode and an anode that are provided to the insulation member 10; and a metal film 13 that is provided to the surface of the insulation member 10. The metal film 13 has one or a plurality of metal films 13b with a surface resistance of 1012 Ω / sq to 1015 Ω / sq between the cathode and the anode.

Description

Insulator, charged particle gun equipped with insulator, charged particle beam device equipped with insulator, and method for manufacturing insulator

[0001] The present disclosure relates to an insulator, a charged particle gun including the insulator, a charged particle beam device including the insulator, and a method for manufacturing the insulator.

[0002] Electron beams and ion beams used in electron microscopes, ion beam processing devices, and electron beam accelerators installed in synchrotron radiation facilities are accelerated by applying a high DC voltage to the electrons or ions, particularly during the initial acceleration. In particular, electron microscopes are designed such that the electron source is applied with a negative high voltage relative to the ground potential, and the electrons are accelerated by the potential difference between the electron source and the ground potential. The energy of the electron beam in this case ranges from several hundred electron volts to several hundred thousand electron volts.

[0003] In these devices, the electron or ion source is placed under high voltage, and the generated electrons or ions are accelerated using a potential difference toward an anode (in the case of an electron beam or negative ion beam) or a cathode (in the case of a positive ion beam) with a potential close to zero, thereby obtaining an electron beam or an ion beam.

[0004] In most cases, when using an electron source or ion source maintained at a high voltage of 100,000 electron volts or more, a tube called an "accelerating tube" is formed to connect it to ground potential. In many cases, this accelerating tube also serves as a vacuum vessel, and serves as a passage for the electron beam or ion beam. In order to maintain high voltage without discharging, the accelerating tube must be made of a non-conductive or highly resistive material.

[0005] When a high voltage is applied to electrodes placed on such a highly resistive material, a phenomenon known as "creeping discharge" occurs, in which a discharge occurs along the surface of the highly resistive material between the electrodes. A model of creeping discharge is shown in Figure 11. When a negative voltage is applied to the cathode 1111 and then increased, a negative electric field concentrates at the triple junction where the cathode 1111, the vacuum, and the dielectric insulator 1110 intersect. When this limit is exceeded, field-emitted electrons are emitted into the vacuum. The emitted electrons collide with the insulator 1110 as they move toward the anode 1112. If there are more than one secondary electron generated at this time, the number of electrons increases like an avalanche and flows into the anode 1112. This condition shorts out the cathode 1111 and anode 1112, resulting in a discharge. Therefore, to suppress creeping discharge, it is necessary to either lower the voltage or increase the distance between the cathode and anode to reduce the electric field concentration.

[0006] Next, the structure of a conventional electron gun will be described with reference to FIG. 12. The electron beam is extracted from the electron source 1201 by the potential difference with the extraction electrode 1202, and the emitted electron beam is accelerated between the electron source 1201 and the anode 1212, which is at ground potential, and passes through the acceleration tube 1215. This acceleration tube 1215 is provided with a number of intermediate electrodes 1208-1 to 1208-4. The intermediate electrodes 1208-1 to 1208-4 are maintained at approximately equal potentials, from a potential close to the extraction electrode 1202 toward the ground potential, using resistors 1209-1 to 1209-4, and these form the acceleration tube 1215 with a multi-stage structure. This multi-stage structure is used to maintain a uniform potential difference between the control electrode 1207 and each of the intermediate electrodes 1208-1 to 1208-3 and to mitigate electric field concentration. Furthermore, insulators 1210-1 to 1210-4 are incorporated to insulate between the control electrode 1207, the intermediate electrodes 1208-1 to 1208-3, and the anode 1212. As a result, there is an essential problem that the device becomes large in size.

[0007] Patent Documents 1 and 2 disclose the above-mentioned accelerating structure having a multi-stage structure.

[0008] JP-A No. 60-262339 JP-A No. 3-84839

[0009] Electron microscopes include transmission electron microscopes (commonly called TEMs (Transmission Electron Microscopes)) and scanning electron microscopes (commonly called SEMs (Scanning Electron Microscopes)). Of these, the acceleration voltage in SEMs is limited to about 30,000 electron volts, which eliminates the need for the above-mentioned acceleration tube, and so lightweight, compact electron guns that do not require an acceleration tube have been used. For this reason, SEMs are more widely used than TEMs because they can reduce the size and weight of the entire device and lower the cost.

[0010] SEMs are used to measure the shape of semiconductor patterns during semiconductor manufacturing inspections, making them a key tool for quality control. As semiconductors become more highly integrated, device structures become more three-dimensional, and there is a growing demand for measuring the shape of ever-finer, deeper hole bottoms. To achieve this, the accelerating voltage must be increased, and we are approaching the point where an accelerating tube of around 100,000 electron volts is needed.

[0011] An object of the present disclosure is to provide an insulator capable of withstanding an acceleration voltage of 100,000 electron volts or more without using an accelerating tube with a multi-stage structure, a charged particle gun equipped with the insulator, a charged particle beam device equipped with the insulator, and a method for manufacturing the insulator.

[0012] The insulator of the present disclosure includes an insulating member, a first electrode and a second electrode provided on the insulating member, and a metal film provided on a surface of the insulating member, and the metal film has a resistivity of 10 or more between the first electrode and the second electrode. １２ Ω / sq ~ 10 １５ It has one or more regions of Ω / sq.

[0013] The charged particle gun of the present disclosure also includes the above-described insulator.

[0014] The charged particle beam device of the present disclosure also includes the above-described insulator.

[0015] The method for manufacturing an insulating insulator according to the present disclosure includes preparing an insulating member, forming one or more grooves on an outer peripheral surface of the insulating member, and forming a metal film on the outer peripheral surface on which the grooves are formed, so that the resistivity of the side wall surfaces that are the inclined surfaces constituting the grooves is 10 １２ Ω / sq ~ 10 １５ and providing one or more regions of Ω / sq.

[0016] According to the present disclosure, it is possible to provide an insulator capable of withstanding an acceleration voltage of 100,000 electron volts or more without using an accelerating tube with a multi-stage structure, a charged particle gun including the insulator, a charged particle beam device including the insulator, and a method for manufacturing the insulator. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0017] FIG. 1 is a cross-sectional view showing the structure of an insulator 1 of Example 1. FIG. 2 is a graph showing the relationship between titanium nitride film thickness and resistivity. FIG. 3 is an enlarged partial cross-section of a groove of the insulator 1 of Example 1. FIG. 4 is a cross-sectional view showing the structure of an insulator 2 of Example 2. FIG. 5 is a diagram showing the structure of an electron gun 500 of Example 3. FIG. 6 is a diagram showing the structure of a charged particle beam device 600 of Example 4. FIG. 7 is a diagram showing an insulator 701 of a first modified example. FIG. 8 is a diagram showing an insulator 801 of a second modified example. FIG. 9 is a diagram showing an insulator 901 of a third modified example. FIG. 10 is a diagram showing an insulator 1001 of a fourth modified example. FIG. 11 is a diagram showing a model of surface discharge. FIG. 12 is a diagram showing the structure of a conventional electron gun.

[0018] In the following embodiments, when necessary for convenience, the description will be divided into multiple sections or embodiments, but unless otherwise expressly stated, they are not unrelated to each other, and one is a partial or complete variation, detail, supplementary explanation, etc. of the other.

[0019] Furthermore, in the following embodiments, when referring to the number of elements (including the number, numerical value, amount, range, etc.), unless otherwise specified or when it is clearly limited to a specific number in principle, it is not limited to that specific number and may be more or less than the specific number.

[0020] Furthermore, it goes without saying that in the following embodiments, the components (including element steps, etc.) are not necessarily essential unless specifically stated otherwise or unless they are clearly considered essential in principle.

[0021] Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of components, etc., it is intended to include those that are substantially similar or similar to those shapes, etc., unless otherwise specified or when it is considered that this is clearly not the case in principle. This also applies to the above numerical values ​​and ranges.

[0022] In addition, in all the drawings for explaining the embodiments, the same components are generally designated by the same reference numerals, and repeated explanations thereof will be omitted.

[0023] (Structure of Insulator 1) The structure of an insulator 1 of Example 1 is shown in Fig. 1. The insulator 1 includes a substantially cylindrical insulating member 10, a cathode 11 (first electrode) and an anode 12 (second electrode) provided on the insulating member 10, and a metal film 13 provided on the surface (outer circumferential surface) of the insulating member 10. The metal film 13 has a resistivity of 10 and is disposed between the cathode 11 and the anode 12. １２ Ω / sq ~ 10 １５ It has multiple annular regions of Ω / sq. This will be explained in detail below.

[0024] The insulating member 10 is made of, for example, alumina (Al ２ O ３ ). The maximum secondary electron yield of alumina is approximately 7 to 8. The insulating member 10 has a hollow 10a. A plurality of annular grooves 10b are formed in the outer peripheral surface of the insulating member 10 along the circumferential direction of the insulating member 10. A metal film 13 having a lower secondary electron yield than the insulating member 10 is provided on the outer peripheral surface of the insulating member 10 where the plurality of grooves 10b are formed. The metal film 13 is, for example, titanium nitride (TiN). The secondary electron yield of titanium nitride is 2 to 3. It is known that the electron avalanche phenomenon can be mitigated by lowering the secondary electron yield.

[0025] However, because titanium nitride is a conductive material, its resistivity changes depending on the film thickness. The graph shown in Figure 2 shows the relationship between the thickness of titanium nitride and its surface resistance. From this graph, it can be seen that if the thickness of the titanium nitride film is greater than 3 nm, the resistivity will be 10 ４ The resistivity is below Ω / sq, which is a region that can be considered almost a conductor. However, when the titanium nitride film thickness is 1 nm to 3 nm, it becomes a discontinuous semiconductive region scattered like islands rather than a continuous film, and a change in film thickness of 0.1 nm results in an unstable state in which the resistivity changes by several orders of magnitude. On the other hand, when the titanium nitride film thickness is 0 to 1 nm, it exhibits a resistivity equivalent to that of alumina and enters an insulating region.

[0026] When a voltage of 100,000 electron volts is applied to the cathode 11, the current value must be kept within a range of several nA to 1 μA in order to avoid heat generation due to Joule heat caused by the power of the power source or the current flowing between the cathode and anode. １２ Ω / sq ~ 10 １５ It is necessary to control the resistivity to about Ω / sq. The thickness of the titanium nitride film corresponding to this resistivity range (target region in FIG. 2) must be extremely precise, at 1.5 to 2.0 nm.

[0027] (Method of forming metal film 13) In order to achieve the above-mentioned precision in film formation in this example, the following method was used. The method of forming metal film 13 will be described with reference to Fig. 3. Fig. 3 is an enlarged view of a portion of the cross section of the groove of insulator 1 of Example 1.

[0028] A groove 10b is formed in the surface 10c of the insulating member 10. The groove 10b includes two slopes 10d and a bottom surface 10e sandwiched between the two slopes 10d. The slopes 10d are inclined at an angle of 30° with respect to a perpendicular line V to the surface 10c (hereinafter, this angle will be referred to as the angle of the slopes 10d). A titanium nitride metal film 13 is formed on the outer peripheral surface of the insulating member 10, for example, by DC magnetron sputtering. In DC magnetron sputtering, film formation proceeds by perpendicularly irradiating highly directional particles onto the outer peripheral surface of the insulating member 10. Here, the metal film formed on the surface 10c is referred to as metal film 13a (second region), the metal film formed on the slopes 10d is referred to as metal film 13b (first region), and the metal film formed on the bottom surface 10e is referred to as metal film 13c (second region).

[0029] By the DC magnetron sputtering method described above, a film (metal film 13b) having a volume corresponding to a length a in the direction H along the surface 10c of the slope 10d is deposited on the slope 10d with a length b. Therefore, the thickness of the metal film 13b on the slope 10d is a / b of the thickness of the metal film 13a on the surface 10c. For example, as shown in FIG. 3 , if the angle of the slope 10d is 30°, depositing a 3-nm metal film 13a on the surface 10c automatically deposits a 1.5-nm metal film 13b on the slope 10d. In this case, if the thickness of the metal film 13a on the surface 10c varies by ±0.5 nm, the thickness of the metal film 13b on the slope 10d is reduced to ±0.25 nm. Thus, the above-described deposition method has the advantage of achieving high precision in the thickness of the metal film 13b on the slope 10d.

[0030] Furthermore, the metal film 13a formed on the surface 10c has a thickness of 3 nm, making it almost a conductive film. Therefore, when a voltage is applied to the cathode 11, the titanium nitride film (metal film 13a) formed on the surface 10c of the insulating member 10, which is electrically connected to the cathode 11, becomes equal to the potential of the cathode 11. The metal film 13b formed on the slope 10d, which is electrically connected to the metal film 13a, has a high resistivity and therefore experiences a large potential drop from the potential of the cathode 11. The titanium nitride film (metal film 13c) on the bottom surface 10e, which is electrically connected to the metal film 13b, has a thickness of 3 nm and therefore becomes equal to the potential drop. This stepwise voltage drop phenomenon is repeated from the cathode 11 to the anode 12, so the potential on the outer peripheral surface of the insulator 1 is uniformed in a stepwise manner. This has the advantage that the insulator 1 can achieve the same effect as a resistor formed with a conventional accelerating tube, without using a conventional multi-stage accelerating tube.

[0031] In this embodiment, the angle of the inclined surface 10d was set to 30°, but it is clear that the effect can be obtained with any angle of the inclined surface 10d between approximately 0° and 45°. Furthermore, while the thickness of the titanium nitride film (metal films 13a and 13c) formed on the top surface 10c and bottom surface 10e was set to 3 nm, the angle of the inclined surface 10d may be appropriately selected to be approximately 2 to 10 nm so that the resistivity of the metal film 13b formed on the inclined surface 10d is the desired resistivity. Additionally, although an example in which the number of grooves 10b is three (see FIG. 1) is shown, the number of grooves 10b is not limited and may be two or less, or four or more.

[0032] In this embodiment, titanium nitride (TiN), which has a lower secondary electron yield than alumina, is used as the material for the metal film 13. However, chromium (Cr) and chromium oxide (Cr ２ O ３ ) etc. are also acceptable.

[0033] Furthermore, by providing an R at the corner of the end shape of the groove 10b (for example, the corner connecting the surface 10c and the inclined surface 10d, or the corner connecting the inclined surface 10d and the bottom surface 10e), the change in film thickness can be made gentler, thereby alleviating the electric field concentration that occurs at the corner.

[0034] (Method of Manufacturing Insulator 1) Here, a method of manufacturing the insulator 1 will be described. The method of manufacturing the insulator 1 includes the steps of: preparing an insulating member 10 having a substantially cylindrical shape; forming one or more grooves 10b on the outer peripheral surface of the insulating member 10; and forming a metal film 13 on the outer peripheral surface on which the grooves 10b are formed using the above-described film forming method, and forming a metal film 13 having a resistivity of 10 on the slopes 10d that form the grooves 10b. １２ Ω / sq ~ 10 １５ and providing a metal film 13b of Ω / sq.

[0035] (Effects of Example 1) In Example 1, one or more grooves 10b are formed on the outer peripheral surface of the insulating member 10, and the metal film 13 is formed on the outer peripheral surface of the insulating member 10 on which the grooves 10b are formed by a highly directional film formation method, so that the resistivity of the inclined surface 10d of the grooves 10b is 10. １２ Ω / sq ~ 10 １５ This makes it possible to form the metal film 13b with a resistance of Ω / sq. This makes it possible to obtain an insulator 1 that can withstand an acceleration voltage of 100,000 electron volts or more.

[0036] Furthermore, in the first embodiment, one or more grooves 10b are formed on the outer peripheral surface of the insulating member 10, and the metal film 13 is formed on the outer peripheral surface of the insulating member 10 on which the grooves 10b are formed by a highly directional film formation method, thereby making it possible to alternately form metal films 13a and 13b with different resistivities. This makes it possible to obtain the same effect as a resistor formed in a conventional accelerating tube, but without a resistor.

[0037] The structure of the insulator 2 of Example 2 is shown in Figure 4. The secondary electron yield of titanium nitride used in the insulator 1 of Example 1 is lower than that of alumina, so the probability of creeping discharge is reduced. However, in Example 1, the maximum value of the secondary electron yield is 1 or more, so electron avalanches cannot be completely eliminated. Therefore, in Example 2, a groove 210b is formed on the outer peripheral surface of the insulating member 210, which gradually becomes higher from the cathode 11 toward the anode 12. The height of the slope 210d2 of the groove 210b on the anode 12 side is higher than the slope 210d1 on the cathode 11 side. By configuring it in this way, the slight amount of secondary electrons (e －) collide with the slope 210d of the groove 210b and are attenuated, so that the number of electrons reaching the anode 12 can be efficiently reduced.

[0038] In the above-described second embodiment, the slope of the groove 210b is gradually increased from the cathode 11 toward the anode 12. However, as long as the slope 210d2 on the anode 12 side of one groove 210b selected from the plurality of grooves 210b is higher than the slope 210d1 on the cathode 11 side of the groove 210b, the slope does not have to be gradually increased.

[0039] 5 shows the structure of an electron gun 500 according to the third embodiment. The electron gun 500 (charged particle gun) according to the third embodiment includes the insulator 1 according to the first embodiment. The electron gun 500 may include the insulator 2 according to the second embodiment. The electron gun 500 includes the insulator 1, an electron source 501 (charged particle source), an extraction electrode 502, an electron gun column 503, and a high-voltage connector 504. A cable 510 is connected to the high-voltage connector 504.

[0040] An electron source 501 and an extraction electrode 502 are connected to the cathode 11 of the insulator 1, and a ground potential is connected to the anode 12. In this embodiment, the electron source 501 is described as a cold cathode electron source, but the electron source 501 may be another type of electron source such as a Schottky electron source. A negative voltage of V0, which is an acceleration voltage, is applied to the electron source 501, and a voltage several kilovolts lower than V0 is applied to the extraction electrode 502, which generates a strong electric field at the tip of the electron source 501. The electron beam extracted from the electron source 501 is emitted downward in the drawing and enters an optical system (not shown).

[0041] As described in the first embodiment, a plurality of grooves 10b are formed in the outer peripheral surface of the insulator 1, and a titanium nitride film is formed on the outer peripheral surface on which the plurality of grooves 10b are formed by DC magnetron sputtering. The angle and film thickness of the inclined surfaces 10d of the grooves 10b are the same as those described in the first embodiment.

[0042] Because the electron source 501 must operate in an ultra-high vacuum, various components of the electron gun 500 are constructed inside the electron gun column 503. The electron gun column 503 is generally made of stainless steel. To create an ultra-high vacuum inside the electron gun column 503, the initial atmospheric pressure is evacuated using a vacuum exhaust pump, and the entire electron gun column 503 is baked at 200°C or higher to reduce gas molecules emitted from the stainless steel wall surface. During this process, the insulator 1 is also exposed to high temperatures. At this time, care must be taken because metal atoms on the surface of the insulator 1 tend to diffuse into the insulator. This is because diffusion of metal elements into the insulator 1 can cause the surface resistivity to shift downward. The titanium nitride used in the insulator 1 has a diffusion barrier effect, which has the advantage of reducing such resistivity fluctuations.

[0043] Once baking is complete and the entire electron gun 500 has returned to room temperature, the high-voltage power supply and the electron gun 500 are connected via a cable 510 and a high-voltage connector 504. The voltage to be applied is supplied via the cable 510 from a high-voltage power supply (not shown) located on the atmosphere side (outside the electron gun column 503). The acceleration voltage V0 of the high-voltage power supply is 100,000 electron volts, and the electron gun 500 of this embodiment is applicable to scanning electron microscopes (SEMs) and transmission electron microscopes (TEMs). Although a detailed description will be omitted, it is obvious that the electron gun 500 can also be applied to charged particle beam devices that use ion beams by simply reversing the polarity of the acceleration voltage.

[0044] 6 shows the structure of a charged particle beam device 600 of Example 4. The charged particle beam device 600 of Example 4 includes the electron gun 500 of Example 3, a convergent lens 601, a blanking deflector 602, an aperture plate 603, an image shift deflector 604, an objective lens 605, a stage 606, a detector 607, a blanking voltage application device 608, a blanking voltage control device 609, a convergent lens control device 610, and a computer system 611.

[0045] An electron beam (primary beam) 612 emitted from the electron gun 500 passes through an aperture hole 603a in an aperture plate 603 due to the converging effect of the magnetic field of a converging lens 601. The electron beam 612 that has passed through the aperture hole 603a is scanned over a sample 613 placed on a stage 606 by the electric or magnetic field of an image shift deflector 604, and is converged on the sample 613 by the converging effect of the magnetic field of an objective lens 605. Secondary electrons 614 generated from the sample 613 by irradiation with the electron beam 612 are detected by a detector 607. As a result, an enlarged image of the area scanned by the electron beam 612 on the sample 613 is obtained.

[0046] (Modifications) The present invention is not limited to the above-described embodiments, and includes various modifications. For example, the above-described embodiments have been described in detail to clearly explain the present invention, and are not necessarily limited to those including all of the described configurations. Furthermore, it is possible to replace part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is possible to add, delete, or replace part of the configuration of each embodiment with other configurations.

[0047] For example, Fig. 7 is a diagram showing an insulator 701 of a first modified example. Similar to the insulator 1 of Example 1, the insulator 701 of the first modified example includes an insulating member 710, a cathode 11, an anode 12, and a metal film 713 formed on the outer peripheral surface of the insulating member 710. No grooves are formed on the outer peripheral surface of the insulator 701 of the first modified example. In the first modified example, regions 713a with a large film thickness and regions 713b with a small film thickness of the metal film 713 are alternately formed along the direction from the cathode 11 to the anode 12. The film thickness of the region 713b is such that the resistivity is 10 １２ ~10 １５ The resistance is controlled to be Ω / sq. The regions 713a and 713b are made of the same metal film material.

[0048] 8 is a diagram showing an insulator 801 of the second modified example. Similar to the insulator 1 of the first embodiment, the insulator 801 of the second modified example includes an insulating member 810, a cathode 11, an anode 12, and a metal film 813 formed on the outer peripheral surface of the insulating member 810. No grooves are formed on the outer peripheral surface of the insulator 801 of the second modified example. The metal film 813 of the insulator 801 of the second modified example has a resistivity of 10 １２ ~10 １５ The first metal film 813a has a resistivity controlled to be smaller than Ω / sq. １２ ~10 １５ and a second metal film 813b controlled to have a resistivity of Ω / sq. In the second modification, for example, the first metal film 813a is made of a metal material selected from titanium nitride, chromium, and chromium oxide, and the second metal film 813b is made of a metal material different from that of the first metal film 813a.

[0049] 9 is a diagram showing an insulator 901 of the third modified example. Similar to the insulator 1 of the first embodiment, the insulator 901 of the third modified example includes an insulating member 910, a cathode 11, an anode 12, and a metal film 913 formed on the outer peripheral surface of the insulating member 910. No grooves are formed on the outer peripheral surface of the insulator 901 of the third modified example. The metal film 913 has only one region 913a with a large film thickness and one region 913b with a small film thickness. The film thickness of the region 913b is such that the resistivity is 10 １２ ~10 １５ It is controlled to be Ω / sq.

[0050] FIG. 10 is a diagram showing an insulator 1001 of a fourth modified example. The insulator 1001 of the fourth modified example includes an insulating member 1010, a cathode 11, an anode 12, and a metal film 1013 formed on the outer peripheral surface of the insulating member 1010, similar to the insulator 1 of the first embodiment. No grooves are formed on the outer peripheral surface of the insulator 1001 of the fourth modified example. The metal film 1013 of the fourth modified example is formed so that its film thickness changes linearly. In the fourth modified example, the film thickness of the metal film 1013 is gradually reduced from the cathode 11 to the anode 12, but it may also be formed so that the film thickness gradually increases. In the region with a small film thickness, the resistivity is 10 １２ ~10１５ It is controlled to be Ω / sq.

[0051] Furthermore, in the above embodiment, the metal film 13 is formed by DC magnetron sputtering, but the method for forming the metal film 13 is not limited to DC magnetron sputtering, and other sputtering methods or vapor deposition methods may also be used.

[0052] 1, 701, 801, 901, 1001: Insulator 10, 210, 710, 810, 910, 1010: Insulating member 10a: Hollow 10b, 210b: Groove 10c: Surface 10d: Slope 10e: Bottom 11: Cathode 12: Anode 13, 13a, 13b, 13c, 713, 813, 913, 1013: Metal film 500: Electron gun 501: Electron source 502: Extraction electrode 503: Electron gun column 504: High-voltage connector 510: Cable 600: Charged particle beam device 601: Converging lens 602: Blanking deflector 603: Aperture plate 604: Image shift deflector 605: Objective lens 606: Stage 607: Detector 608: Blanking voltage application device 609: Blanking voltage control device 610: Converging lens control device 611: Computer system 612: Electron beam 613: Sample 614: Secondary electrons 713a, 913a: Thick film region 713b, 913b: Thin film region 813a: First metal film 813b: Second metal film

Claims

1. An insulating member; a first electrode and a second electrode provided on the insulating member; a metal film provided on a surface of the insulating member, The metal film has a resistivity of 10 １２ Ω / sq ~ 10 １５ one or more first regions having a resistivity of Ω / sq and one or more second regions having a resistivity lower than that of the first regions; The first regions and the second regions are alternately provided along a direction from the first electrode toward the second electrode. An insulating insulator characterized by:

2. the first region and the second region are made of the same metal film; The thickness of the first region is smaller than the thickness of the second region.

2. The insulator according to claim 1.

3. One or more annular grooves are formed on the surface of the insulating member, The first region is formed on the inclined surface that constitutes the groove, and the second region is formed on the bottom surface or the surface that constitutes the groove.

3. The insulator according to claim 2.

4. The height of the inclined surface of the groove on the second electrode side is higher than the inclined surface of the groove on the first electrode side.

4. The insulator according to claim 3.

5. The inclined surface is inclined at an angle of 0° to 45° with respect to a normal to the surface.

4. The insulator according to claim 3.

6. The first region and the second region are made of different metal films.

2. The insulator according to claim 1.

7. the metal film has a thickness that gradually decreases or increases along a direction from the first electrode toward the second electrode, In the region where the film thickness is small, the resistivity is 10 １２ Ω / sq ~ 10 １５ Ω / sq 2. The insulator according to claim 1.

8. The metal film is made of titanium nitride, chromium, or chromium oxide.

2. The insulator according to claim 1.

9. The insulating insulator according to claim 1; a charged particle source; an extraction electrode connected to the first electrode or the second electrode of the insulator and extracting the charged particle beam from the charged particle source. A charged particle gun characterized by:

10. The charged particle gun according to claim 9 is provided. A charged particle beam device characterized by:

11. Providing an insulating member; providing a first electrode and a second electrode on the insulating member; and The resistivity is 10 along the direction from the first electrode to the second electrode. １２ Ω / sq ~ 10 １５ and providing one or more first regions having a resistivity of Ω / sq alternating with one or more second regions having a resistivity lower than that of the first regions. A method for manufacturing an insulator comprising the steps of:

12. One or more grooves are formed on the surface of the insulating member, The step of alternately providing the first regions and the second regions includes forming the first regions on the slopes of the grooves and forming the second regions on the bottom surfaces of the grooves using a DC magnetron sputtering method. The method for manufacturing an insulator according to claim 11.