Substrate processing apparatus and substrate processing method

Abstract

The purpose of the present invention is to satisfactorily remove a peripheral part of a metal-containing coating film that is formed on a substrate.　This substrate processing apparatus (1) is configured to sequentially execute: a first step for supplying a first processing liquid from an end of a substrate to a first width region, while rotating the substrate on which a metal-containing coating film is formed, thereby removing the coating film; a second step for supplying a second processing liquid from the end of the substrate to a second width region having a width narrower than that of the first width region, thereby removing the metal remaining in the second width region; and a third step for supplying a third processing liquid from the end of the substrate to a third width region having a width narrower than that of the first width region but wider than that of the second width region, thereby washing out the second processing liquid remaining in the third width region.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] Patent Document 1 discloses a coating film removing device that uses a remover to remove the peripheral edge of a coating film formed by supplying a coating liquid to the surface of a circular substrate.

[0003] Japanese Patent Application Publication No. 2018-121045

[0004] The technique according to the present disclosure preferably removes the peripheral portion of a metal-containing coating formed on a substrate.

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, the apparatus comprising: a substrate holding unit that holds and rotates a substrate having a metal-containing coating film formed thereon; a first processing liquid supply unit that supplies a first processing liquid to a surface of the substrate; a second processing liquid supply unit that supplies a second processing liquid to the surface of the substrate; a third processing liquid supply unit that supplies a third processing liquid to the surface of the substrate; and a control unit; The control unit is configured to execute the following steps: a first step of supplying the first processing liquid from the first processing liquid supply unit to a first width region from an edge of the substrate while rotating the substrate, thereby removing the coating film; a second step of supplying the second processing liquid from the second processing liquid supply unit to a second width region from the edge of the substrate, the second width region being narrower than the first width region, while rotating the substrate after the first step, thereby removing the metal remaining in the second width region; and a third step of supplying the third processing liquid from the third processing liquid supply unit to a third width region from the edge of the substrate, the third width region being narrower than the first width region and wider than the second width region, while rotating the substrate after the second step, thereby washing away the second processing liquid remaining in the third width region.

[0006] According to the present disclosure, it is possible to suitably remove the peripheral portion of a metal-containing coating formed on a substrate.

[0007] 1 is a side view schematically showing the outline of the configuration of a coating film forming apparatus according to an embodiment; FIG. 2 is a plan view schematically showing the outline of the configuration of the coating film forming apparatus of FIG. 1; FIG. 3 shows a state in which a metal-containing resist film is applied to a surface of a wafer in a coating film forming method according to an embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of an edge of the wafer; FIG. 4 shows a state in which a first step is performed in a coating film forming method according to an embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of an edge of the wafer; FIG. 5 shows a state in which a second step is performed in a coating film forming method according to an embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of an edge of the wafer. 9A and 9B show the state of carrying out the third step in the coating film forming method according to the embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of the edge of the wafer. FIG. 9B is an explanatory diagram showing the discharge angle of a processing liquid supply nozzle in a coating film forming apparatus according to the embodiment, as viewed from the side, relative to the wafer. FIG. 9C ... plan view of an arrangement when three processing liquid supply nozzles are arranged on the front surface side of the wafer. FIG. 9D is an explanatory diagram showing the arrangement of back surface nozzles arranged on the back surface side of the wafer, when the arrangement of FIG. 9 is adopted.

[0008] In the photolithography process in the manufacturing process of semiconductor devices, a coating film such as an anti-reflective film or a resist film is formed on a workpiece such as a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate. In such cases, for example, when forming a resist film, a spin coating method is often used, in which a resist liquid is supplied to the wafer from above the center of the wafer and the wafer is rotated to spread the resist liquid on the wafer over the entire surface of the wafer.

[0009] In the spin coating method, the resist solution on the wafer spreads all the way to the side edges of the wafer, and therefore, as in the technique described in Patent Document 1, the resist film formed after the application of the resist solution is removed from a certain region of the wafer edge by supplying an organic solvent such as thinner, which dissolves the resist film, to the region while the wafer is rotating.

[0010] In recent years, in order to form finer patterns, it has been proposed to form a coating film containing a metal (hereinafter referred to as a "metal-containing coating film") on a substrate such as a wafer.

[0011] When removing such a metal-containing coating film (film), simply using an organic solvent such as thinner that dissolves the coating film itself will result in the metal components contained in the dissolved coating film remaining on the peripheral surface of the wafer, which can adversely affect subsequent processes and contribute to cross-contamination.

[0012] The technology disclosed herein effectively removes a metal-containing coating film from the peripheral portion of a substrate on which the metal-containing coating film is formed. The configuration of a substrate processing apparatus according to this embodiment will now be described with reference to the drawings. Note that, in this specification, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0013] FIG. 1 is an explanatory diagram showing a schematic side view of the configuration of a coating film forming apparatus 1 configured as an example of a substrate processing apparatus, and FIG. 2 is an explanatory diagram showing the same configuration from a schematic plan view.

[0014] 1 and 2, the coating film forming apparatus 1 includes a spin chuck 11, which is a substrate holding unit that holds a wafer W horizontally by vacuum-adsorbing the central portion of the back surface of the wafer W, as a substrate, in a processing vessel 2. The spin chuck 11 is connected to a rotation drive mechanism 13 via a shaft 12, and is rotated around a vertical axis by the rotation drive mechanism 13.

[0015] A circular plate 14 is provided below the spin chuck 11 so as to surround the shaft portion 12 with a gap therebetween. Three through holes 15 are formed in the circular plate 14 in the circumferential direction, and lift pins 16 can be inserted into each of the through holes 15. These lift pins 16 are supported by a lift plate 17. The lift plate 17 can be raised and lowered by a lift mechanism 18. By raising and lowering the lift mechanism 18, the lift pins 16 can lift a wafer W released from suction from the spin chuck 11, or can place a wafer W received from a transfer device (not shown) on the spin chuck 11.

[0016] A cup body 20 is provided in the processing chamber 2 of the coating film forming apparatus 1 so as to surround the spin chuck 11. The cup body 20 is configured to receive waste liquid that is scattered or spilled from the rotating wafer W and to discharge the waste liquid to the outside of the coating film forming apparatus 1.

[0017] More specifically, the cup body 20 includes a mountain-shaped guide portion 21 having a mountain-shaped cross section and provided around the circular plate 14, and an annular vertical wall 22 extending downward from the outer peripheral edge of the mountain-shaped guide portion 21. The mountain-shaped guide portion 21 guides liquid spilled from the wafer W to the outside and below the wafer W.

[0018] A vertical cylindrical portion 23 is provided on the outside of the mountain-shaped guide portion 21 so as to surround the mountain-shaped guide portion 21, and an upper guide portion 24 extends obliquely inward and upward from the upper edge of the cylindrical portion 23. A plurality of openings 25 are provided in the circumferential direction of the upper guide portion 24. The upper end of the cylindrical portion 23 extends above the spin chuck 11, and an inclined body 23a extending inward and upward is provided on the inner edge of the end portion.

[0019] A ring-shaped liquid receiving portion 26 having a concave cross section is formed below the mountain-shaped guide portion 21 and the cylindrical portion 23 on the lower side of the cylindrical portion 23. A drainage path 27 is connected to the outer periphery of this liquid receiving portion 26. Two exhaust pipes 28 are provided on the inner periphery of the liquid receiving portion 26 relative to the drainage path 27.

[0020] 2, a rail 30 extending in the Y direction (left and right in FIG. 2) is formed on the negative X direction (downward in FIG. 2) side of the cup body 20. The rail 30 is located, for example, from the outside of the negative Y direction (leftward in FIG. 2) side of the cup body 20 to the outside of the positive Y direction (rightward in FIG. 2) side. A first arm 31 and a second arm 41 are provided on the rail 30 so as to be movable along the rail 30.

[0021] A resist solution supply nozzle 32 is supported on the first arm 31, and supplies a metal-containing resist solution, which is a coating solution containing a metal. The metal-containing resist solution is supplied to the resist solution supply nozzle 32 from a metal-containing resist solution supply source 33 via a supply path 34. The first arm 31 is movable along the Y direction on the rail 30 by a nozzle drive unit 35. This allows the resist solution supply nozzle 32 to move at least to above the center of the wafer W held by the spin chuck 11 within the cup body 20. The nozzle drive unit 35 also allows the first arm 31 to be raised and lowered, thereby adjusting the height of the resist solution supply nozzle 32.

[0022] The second arm 41 supports a processing liquid supply nozzle 42 as a first processing liquid supply unit that supplies a first processing liquid, such as an organic solvent such as PEGMEA (propylene glycol monomethyl ether acetate), which dissolves and removes the coating film (e.g., zirconium oxide film) formed by the metal-containing resist liquid, and a processing liquid supply nozzle 43 as a second processing liquid supply unit that supplies a second processing liquid, such as an acid thinner which is an acid processing liquid that dissolves the metal in the metal-containing coating film.

[0023] In this embodiment, the processing liquid supply nozzle 42 also serves as a third processing liquid supply unit. That is, after supplying the second processing liquid, the processing liquid supply nozzle 42 supplies a third processing liquid, such as PEGMEA, for cleaning the surface of the wafer W. In other words, the processing liquid supply nozzle 42 serves as both a first processing liquid supply unit and a third processing liquid supply unit. In this example, the first processing liquid and the third processing liquid are the same solvent PG, PEGMEA. The first processing liquid and the third processing liquid, solvent PG, are supplied to the processing liquid supply nozzle 42 from a supply source 44 via a supply path 45. The second processing liquid, acid thinner, is supplied to the processing liquid supply nozzle 43 from an acid thinner supply source 46 via a supply path 47.

[0024] The second arm 41 is movable on the rail 30 by the nozzle drive unit 48. This allows the processing liquid supply nozzles 42, 43 to move from at least the edge to a certain width region above the wafer W in the cup body 20. The nozzle drive unit 48 also allows the second arm 41 to be raised and lowered, allowing the height of the processing liquid supply nozzles 42, 43 to be adjusted.

[0025] 1 , a first rear surface nozzle 51 serving as a fifth processing liquid supply unit for supplying the above-mentioned PEGMEA and a second rear surface nozzle 52 serving as a fourth processing liquid supply unit for supplying acid thinner are disposed on the inner peripheral side of the mountain-shaped guide portion 21. The supply direction (discharge direction) of the liquid from the first rear surface nozzle 51 and the second rear surface nozzle 52 is directed obliquely outward from the underside of the peripheral portion of the wafer W. The first rear surface nozzle 51 is located closer to the center of the wafer W than the second rear surface nozzle 52.

[0026] As shown in FIG. 1 , the coating film forming apparatus 1 includes at least one control unit 100. The control unit 100 processes computer-executable instructions that cause the coating film forming apparatus 1 to perform the various processes described herein. The control unit 100 may be configured to control each element of the coating film forming apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 100 may be included in the coating film forming apparatus 1. The control unit 100 may include a processing unit, a storage unit, and a communication interface. The control unit 100 may be implemented, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations, and to execute the read program to perform various control operations. This makes it possible to control, for example, the rotation speed of the spin chuck 11, the discharge positions, discharge flow rates, and discharge times of the treatment liquid supply nozzles 42 and 43, and the discharge flow rates and discharge times of the liquids from the first back surface nozzle 51 and the second back surface nozzle 52. The program may be stored in advance in the storage unit or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit and executed. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the coating film forming apparatus 1 via a communication line such as a LAN (Local Area Network).

[0027] <Substrate Processing Method> Next, a description will be given of a substrate processing method using the above-described coating film forming apparatus 1. In this example, a method for forming and processing a zirconium oxide film as a metal-containing coating film will be described.

[0028] 3( a), a metal-containing resist solution for forming a zirconium oxide film is supplied from above the center of the wafer W held on the spin chuck 11, and the wafer W is rotated to spread the resist solution over the entire surface of the wafer W, forming a metal-containing resist film R. When forming the metal-containing resist film R by such a spin coating method, the rotation speed is, for example, 1400 rpm. As a result, the metal-containing resist film R is formed up to the edge Wt of the side surface of the wafer W, as shown in FIGS. 3( b) and 3(c).

[0029] <First Step> After the metal-containing resist film R is formed on the wafer W, the processing liquid supply nozzle 42 moves to the vicinity of the edge of the wafer W, as shown in FIG. 4A. While the wafer W is being rotated, a solvent PG for the metal-containing resist solution is supplied to a region of a certain width A in the radial direction from the edge Wt of the wafer W, as also shown in FIGS. 4B and 4C, to remove the metal-containing resist film R in a circular pattern from the region of width A in the metal-containing resist film R. In this example, PEG-MEA is used as the solvent PG. The rotation speed of the wafer W in the first step is, for example, 1000 rpm.

[0030] While the solvent PG is being supplied from the processing liquid supply nozzle 42 to an area of ​​width A on the front surface of the wafer W, the solvent PG is also supplied from the first rear surface nozzle 51 to the peripheral portion of the rear surface of the wafer W. In this example, the solvent PG is PEG-MEA.

[0031] 5(a), processing liquid supply nozzle 43 is moved to the vicinity of the edge of wafer W, replacing processing liquid supply nozzle 42. Then, while rotating wafer W, processing liquid AT that dissolves metal in metal-containing resist film R is supplied to a region of a certain width B in the radial direction from edge Wt of wafer W, as also shown in FIGS. 5(b) and 5(c). This dissolves and removes any metal components that may remain in the region of width B. In this example, as described above, acid thinner is used as processing liquid AT that dissolves metal. The rotation speed of wafer W in the second step is, for example, 1000 rpm.

[0032] While the processing liquid AT, which is acid thinner, is being supplied from the processing liquid supply nozzle 43 to an area of ​​width B on the front surface of the wafer W, the processing liquid AT, which is acid thinner, is also being supplied from the second back surface nozzle 52 to the peripheral portion of the back surface of the wafer W.

[0033] <Third Step> Thereafter, as shown in FIG. 6( a), the processing liquid supply nozzle 42 is again moved to the vicinity of the edge of the wafer W, replacing the processing liquid supply nozzle 43. Then, while the wafer W is being rotated, as also shown in FIGS. 6( b) and 6(c), a solvent PG for the metal-containing resist liquid is supplied to an area of ​​a certain width C in the radial direction from the edge Wt of the wafer W. This washes away the acid thinner remaining in the area of ​​width C. In this example, the solvent PG is the aforementioned PEG-MEA. The rotation speed of the wafer W in the third step is, for example, 1000 rpm.

[0034] While the solvent PG is being supplied from the processing liquid supply nozzle 42 to an area of ​​width C on the front surface of the wafer W, the solvent PG is also being supplied from the first rear surface nozzle 51 to the peripheral portion of the rear surface of the wafer W.

[0035] The relationship between the lengths of width A, width B, and width C is A>C>B. According to the substrate processing method of the embodiment described above, in the first step, the metal-containing resist film R formed on the surface of the wafer W is removed in a circular pattern with the solvent PG from the edge Wt of the wafer W in the radial direction, in a region of width A. Next, in the second step, the surface of the wafer W in a region of width B narrower than width A is cleaned with acid thinner, and any metal components remaining in the region of width B are dissolved and removed. Then, in the third step, the surface of the wafer W in a region of width C wider than width B but narrower than width A is cleaned with the solvent PG, and the acid thinner remaining in the region of width C is washed away.

[0036] Therefore, the peripheral portion of the metal-containing resist film R can be suitably removed, and the occurrence of defects in the metal-containing coating and the underlying film on the substrate surface during removal of the peripheral portion of the metal-containing coating can be suppressed.

[0037] In the above-described process, the length relationship between width A, width B, and width C is A>C>B for the following reason: In the first step, when the region of width A in the metal-containing resist film R is dissolved and removed by the solvent PG, metal components in the dissolved film components may remain on the surface of the wafer W after film removal. If this is left as it is, as mentioned above, it may adversely affect subsequent processes or be a cause of cross-contamination.

[0038] Therefore, it is necessary to remove the metal components that may remain on the surface of the wafer W after film removal. Therefore, in the second step, a processing liquid AT for dissolving the metal components, such as an acid thinner, which is a mixture of an acidic agent and a thinner, is supplied to the surface of the wafer W after film removal. Then, in the third step, a solvent PG is supplied to wash away the processing liquid AT.

[0039] Here, the width B of the region to which the processing liquid AT is supplied in the second step is smaller than the width A of the region to which the solvent PG is supplied in the first step because if width B were equal to width A, the processing liquid AT would penetrate into the metal-containing resist film R from the interface of the metal-containing resist film R removed by the solvent PG, and there is a risk of corroding the metal-containing resist film R.

[0040] Furthermore, the width C of the region to which the solvent PG is supplied in the third step is larger than the width B of the region to which the processing liquid AT is supplied in the second step in order to completely wash away the processing liquid AT supplied in the second step. The width C of the region to which the solvent PG is supplied in the third step is smaller than the width A of the region to which the solvent PG is supplied in the first step in order to prevent the washed-out processing liquid AT from penetrating from the interface of the metal-containing resist film R and to prevent the metal components in the metal-containing resist film R from leaking out. From the above, in the above-described process, the length relationship between width A, width B, and width C is A>C>B.

[0041] 7 , the discharge angle with respect to the wafer W in a plan view, i.e., the angle θ1 with respect to the tangent line of the wafer W, is described below. The discharge angle θ1 of the processing liquid supply nozzles 42, 43 for supplying the solvent PG is set to, for example, 8.5 degrees. On the other hand, the discharge angle θ1 of the processing liquid supply nozzle 43 for supplying the processing liquid AT for dissolving metal components is set to, for example, 30 degrees. That is, the processing liquid supply nozzle 43 for supplying the processing liquid AT is directed radially outward relative to the processing liquid supply nozzle 42 for supplying the solvent PG. This is to prevent the supplied processing liquid AT from splashing or scattering inward, and also to ensure that the solvent PG is distributed further inward when the processing liquid AT is subsequently washed away with the solvent PG.

[0042] The discharge angle of the processing liquid supply nozzles 42, 43 with respect to the wafer W in a side view, i.e., the depression angle θ2, is set to, for example, 45 degrees for both the processing liquid supply nozzles 42, 43. By discharging the processing liquid at an angle in this manner, the supplied liquid is prevented from heading toward the center of the wafer W.

[0043] In this way, the processing liquid supply nozzle 43 that supplies the processing liquid AT is directed further outward than the processing liquid supply nozzle 42 that supplies the solvent PG, so that the processing liquid AT supplied from the processing liquid supply nozzle 43 is prevented from moving toward the center of the wafer W, and the solvent PG that is supplied in the subsequent third step can thoroughly clean the processing liquid AT that was previously supplied.

[0044] In the above embodiment, the solvent PG used in the first step and the solvent PG used in the third step were the same solvent. However, since the purpose of the solvent supplied in the third step is to wash away the processing liquid AT supplied in the second step, the liquid supplied in the third step may be another solvent. For example, it may be pure water. In the above example, since the solvent PG used in the first step and the solvent PG used in the third step were the same solvent, a common processing liquid supply nozzle 42 could be used as the supply nozzle. However, if the liquid supplied in the third step is a liquid different from the solvent PG used in the first step, such as pure water, different nozzles must be used for supplying the respective liquids. In other words, the supply nozzles serving as the first processing liquid supply unit, second processing liquid supply unit, and third processing liquid supply unit must be separate.

[0045] In the above-described embodiment, the rotation speed of the wafer W in the first, second, and third steps is set to 1000 rpm, but the rotation speed in the second step in which the processing liquid AT is supplied may be faster than the rotation speed in the first and third steps in which the solvent PG is supplied, in order to prevent droplets of the processing liquid AT from scattering toward the area in which the solvent PG is supplied.

[0046] In the first and third steps, the solvent PG is also supplied from the first back surface nozzle 51 on the back surface side of the wafer W, and in the second step, the processing liquid AT is also supplied from the second back surface nozzle 52. The liquid supplied from each of these back surface nozzles is the same liquid as the liquid supplied from the front surface side of the wafer W. The purpose of this is to prevent the liquid supplied to the front surface side of the wafer W from flowing around to the back surface side of the wafer W. Therefore, the positions of the first back surface nozzle 51 and the second back surface nozzle 52 arranged on the back surface side do not need to be set as strictly as those of the processing liquid supply nozzles 42 and 43 arranged on the front surface side of the wafer W.

[0047] However, from the viewpoint of preventing the liquid supplied to the front surface side of the wafer W from flowing around to the rear surface side of the wafer W, it is preferable that the first rear surface nozzle 51 and the second rear surface nozzle 52 arranged on the rear surface side are arranged at positions facing the processing liquid supply nozzles 42 and 43 arranged on the front surface side of the wafer W across the wafer W. In this case, it is preferable that the radial positions of the first rear surface nozzle 51 and the second rear surface nozzle 52 arranged on the rear surface side are more inward than the processing liquid supply nozzles 42 and 43 arranged on the front surface side of the wafer W, i.e., closer to the center of the wafer W.

[0048] 9 is a schematic plan view illustrating the arrangement of processing liquid supply nozzles 61, 62, and 63, which are separate units serving as the first processing liquid supply unit, the second processing liquid supply unit, and the third processing liquid supply unit, which are arranged on the front surface side of the wafer W. FIG. 10 is a schematic plan view illustrating the arrangement of back surface nozzles 71, 72, and 73, which are arranged on the back surface side of the wafer W. For convenience of illustration, the front surface side processing liquid supply nozzles 61, 62, and 63 are not shown in FIG.

[0049] 9 and 10, the rear surface nozzles 71, 72, and 73 arranged on the rear surface side are positioned opposite the processing liquid supply nozzles 61, 62, and 63 arranged on the front surface side with the wafer W in between, but the rear surface nozzles 71, 72, and 73 are positioned radially closer to the center P of the wafer W than the processing liquid supply nozzles 61, 62, and 63 arranged on the front surface side. This makes it possible to more reliably prevent the liquid supplied from the processing liquid supply nozzles 61, 62, and 63 to the front surface side of the wafer W from flowing around to the rear surface side of the wafer W.

[0050] In the above-described embodiment, the substrate processing is tentatively completed by performing the first step, the second step, and the third step. However, this is not limiting. For example, after the first step, the second step, and the third step, the second step and the third step may be performed again to complete the processing. In other words, the second step and the third step may be repeatedly performed. In this way, appropriate processing can be performed according to the remaining state of the processing liquid AT, such as metal components and acid thinner, remaining on the substrate surface.

[0051] Furthermore, the above-described coating film forming apparatus 1 is configured so that the process of forming a metal-containing resist film R on the wafer W and the first, second, and third steps of removing the peripheral portion of the metal-containing resist film R are performed within the same apparatus, but this is not limiting, and the process of forming the metal-containing resist film R and the first to third steps may be performed within separate apparatuses or modules.

[0052] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0053] The following configurations also fall within the technical scope of the present disclosure: (1) A substrate processing apparatus for processing a substrate, comprising: a substrate holding unit that holds and rotates a substrate having a metal-containing coating film formed thereon, a first processing liquid supply unit that supplies a first processing liquid to a surface of the substrate, a second processing liquid supply unit that supplies a second processing liquid to the surface of the substrate, a third processing liquid supply unit that supplies a third processing liquid to the surface of the substrate, and a control unit, wherein the control unit performs a first step of supplying the first processing liquid from the first processing liquid supply unit to a first width region from an edge of the substrate while rotating the substrate, thereby removing the coating film, and a second step of supplying the second processing liquid from the second processing liquid supply unit to a second width region from the edge of the substrate, the second width region being narrower than the first width region, while rotating the substrate, after the first step, thereby removing the metal remaining in the second width region. a third step of, after the second step, supplying the third processing liquid from the third processing liquid supply unit to a third width region from an edge of the substrate, the third width region being narrower than the first width region and wider than the second width region, while rotating the substrate, to wash away the second processing liquid remaining in the third width region. (2) The substrate processing apparatus according to (1), wherein the first processing liquid and the third processing liquid are the same processing liquid. (3) The substrate processing apparatus according to (1), wherein the first processing liquid and the third processing liquid are an organic solvent. (4) The substrate processing apparatus according to claim 2, wherein the first processing liquid supply unit and the third processing liquid supply unit are shared. (5) The substrate processing apparatus according to any one of (1) to (4), wherein the second processing liquid is an acid processing liquid that dissolves the metal. (6) The substrate processing apparatus according to (1), wherein the first processing liquid is an organic solvent, and the third processing liquid is pure water. (7) The substrate processing apparatus according to (6), further comprising a coating liquid supply unit configured to supply a coating liquid containing a metal to the substrate held by the substrate holding unit, and the control unit configured to execute, before the first step, a step of supplying the coating liquid from the coating liquid supply unit to the surface of the substrate held by the substrate holding unit to form the coating film.(9) The substrate processing apparatus according to (7), further comprising a fourth processing liquid supply unit that supplies a second processing liquid to the backside of the substrate, wherein, when the second processing liquid is being supplied from the second processing liquid supply unit in the second step, the fourth processing liquid supply unit supplies the second processing liquid. (10) The substrate processing apparatus according to (9), further comprising a fifth processing liquid supply unit that supplies a third processing liquid to the backside of the substrate, wherein, when the third processing liquid is being supplied from the third processing liquid supply unit in the third step, the fifth processing liquid supply unit supplies the third processing liquid. (11) The substrate processing apparatus according to (1), further comprising: a substrate processing apparatus according to (1), further comprising: a nozzle serving as the second processing liquid supply unit; a nozzle serving as the first processing liquid supply unit; ... (13) The substrate processing apparatus according to (12), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step. (14) The substrate processing apparatus according to (1), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step. (15) The substrate processing apparatus according to (1), wherein the control unit executes the second step and the third step again after executing the third step. (16) A substrate processing method for processing a substrate, comprising: a first step of supplying a first processing liquid from an edge of the substrate to a first width region while rotating the substrate, thereby removing a coating film in the first width region; a second step of supplying a second processing liquid from the edge of the substrate to a second width region narrower than the first width region while rotating the substrate, after the first step, thereby removing metal components remaining in the second width region; and a third step of supplying a third processing liquid from the edge of the substrate to a third width region narrower than the first width region but wider than the second width region while rotating the substrate, after the second step, thereby washing away the second processing liquid remaining in the third width region.(17) The substrate processing method according to (16), wherein the first processing liquid and the third processing liquid are the same processing liquid. (18) The substrate processing method according to (16), wherein the first processing liquid and the third processing liquid are organic solvents. (19) The substrate processing method according to any one of (16) to (18), wherein the second processing liquid is an acidic processing liquid that dissolves the metal component. (20) The substrate processing method according to (16), wherein the first processing liquid is an organic solvent and the third processing liquid is pure water. (21) The substrate processing method according to (20), wherein the second processing liquid is an acidic processing liquid that dissolves the metal component. (22) The substrate processing method according to (21), wherein the second processing liquid is supplied from the backside of the substrate when the second processing liquid is being supplied in the second step. (23) The substrate processing method according to (22), wherein the third processing liquid is supplied from the backside of the substrate when the third processing liquid is being supplied in the third step. (24) The substrate processing method according to claim (16), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first and third steps. (25) The substrate processing method according to (16), wherein a discharge angle with respect to a tangent to the substrate in a plan view when the second processing liquid is supplied from the nozzle is directed radially outward relative to a discharge angle when the first processing liquid is supplied from the nozzle. (26) The substrate processing method according to (16), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step. (27) The substrate processing method according to (25), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step. (28) The substrate processing method according to (16), wherein the second step and the third step are performed again after the third step is performed.

[0054] REFERENCE SIGNS LIST 1 Coating film forming apparatus 2 Processing container 11 Spin chuck 42 Processing liquid supply nozzle 43 Processing liquid supply nozzle 100 Control unit R Metal-containing resist film W Wafer Wt Edge

Claims

1. A substrate processing apparatus for processing a substrate, a substrate holder that holds and rotates a substrate on which a metal-containing coating film is formed; a first processing liquid supply unit that supplies a first processing liquid to the surface of the substrate; a second processing liquid supply unit that supplies a second processing liquid to the surface of the substrate; a third processing liquid supply unit that supplies a third processing liquid to the surface of the substrate; a control unit, The control unit a first step of supplying the first processing liquid from the first processing liquid supply unit to a first width region from an edge of the substrate while rotating the substrate, thereby removing the coating film; a second step of, after the first step, supplying the second processing liquid from the second processing liquid supply unit to a second width region narrower than the first width region from an end of the substrate while rotating the substrate, thereby removing the metal remaining in the second width region; a third step of, after the second step, supplying the third processing liquid from the third processing liquid supply unit to a third width region from an edge of the substrate that is narrower than the first width region and wider than the second width region while rotating the substrate, thereby rinsing away the second processing liquid remaining in the third width region.

2. The substrate processing apparatus according to claim 1 , wherein the first processing liquid and the third processing liquid are the same processing liquid.

3. The substrate processing apparatus according to claim 1 , wherein the first processing liquid and the third processing liquid are organic solvents.

4. The substrate processing apparatus according to claim 2 , wherein the first processing liquid supply unit and the third processing liquid supply unit are shared.

5. 5. The substrate processing apparatus according to claim 2, wherein the second processing liquid is an acid processing liquid that dissolves the metal.

6. (delete)

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10. (delete)

11. The substrate processing apparatus of claim 1 , wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first and third steps.

12. 2. The substrate processing apparatus according to claim 1, wherein an ejection angle relative to a tangent to the substrate in a planar view when the second processing liquid is supplied from a nozzle serving as the second processing liquid supply unit is directed radially outward relative to an ejection angle when the first processing liquid is supplied from a nozzle serving as the first processing liquid supply unit.

13. The substrate processing apparatus of claim 12 , wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step.

14. The substrate processing apparatus of claim 1 , wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step.

15. The substrate processing apparatus according to claim 1 , wherein the control unit executes the second step and the third step again after executing the third step.

16. A substrate processing method for processing a substrate, comprising: a first step of supplying a first processing liquid to a first width region from an end of the substrate while rotating the substrate, thereby removing a coating film in the first width region; a second step of, after the first step, supplying a second processing liquid to a second width region narrower than the first width region from an edge of the substrate while rotating the substrate, thereby removing metal components remaining in the second width region; a third step of, after the second step, supplying a third processing liquid to a third width region from an edge of the substrate that is narrower than the first width region and wider than the second width region while rotating the substrate, thereby rinsing away the second processing liquid remaining in the third width region.

17. 17. The substrate processing method according to claim 16, wherein the first processing liquid and the third processing liquid are the same processing liquid.

18. 17. The substrate processing method according to claim 16, wherein the first processing liquid and the third processing liquid are organic solvents.

19. 19. The substrate processing method according to claim 17, wherein the second processing liquid is an acidic processing liquid that dissolves the metal component.

20. (delete)

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24. 17. The substrate processing method according to claim 16, wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step and the third step.

25. 17. The substrate processing method according to claim 16, wherein an ejection angle relative to a tangent to the substrate in a planar view when the second processing liquid is supplied from the nozzle is directed radially outward relative to an ejection angle when the first processing liquid is supplied from the nozzle.

26. 17. The substrate processing method according to claim 16, wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step.

27. 26. The substrate processing method according to claim 25, wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step.

28. 17. The substrate processing method according to claim 16, wherein after the third step is performed, the second step and the third step are performed again.