Active Gas Generator

Abstract

The present disclosure aims to provide a structure of an active gas generator capable of supplying a uniform active gas to a treatment space. The electrode unit (55) in the active gas generator (75) of the present disclosure includes a ground conductor (60) provided below a ground electrode component (E2). The housing bottom (1a) of the housing (1) has a housing opening (41), which includes a lower tapered region (41t) and an upper region (41a) whose opening area increases downward. The multiple gas outlets (70) provided in the ground conductor (60) are provided in such a manner that they approach each other downward so that multiple partially activated gases collide in a collision region (80), and the collision region (80) is present in the lower tapered region (41t) or in the upper region (41a) above the lower tapered region (41t).

Description

[Technical field]

[0001] The present disclosure relates to an active gas generation device that has a parallel plate type electrode structure and generates an active gas by utilizing a dielectric barrier discharge. [Background technology]

[0002] In conventional active gas generators that have a parallel plate electrode structure and employ a dielectric barrier discharge, the gap between the opposing metal electrodes (conductive film for electrodes) and dielectric film (dielectric film for electrodes), or the gap between opposing dielectric films, serves as the discharge space.

[0003] Conventional active gas generators employ a parallel plate dielectric barrier discharge, which generates a dielectric barrier discharge in a discharge space and activates a raw material gas introduced into the discharge space to generate an active gas.

[0004] An example of an active gas generator that employs a parallel plate type dielectric barrier discharge is disclosed in Patent Document 1.

[0005] Generally, active gases have a short lifespan (the period during which they maintain high reactivity) and must be supplied to the space in which they are used within a short period of time. In addition, active gases are deactivated when they collide with other substances, so it is not desirable to supply them to the space in which they are used via a winding pipe, etc.

[0006] For this reason, when the object to be treated (the object to which the active gas is sprayed) is large in the treatment space using the active gas, conventional active gas generation devices have adopted a first improved structure in which multiple gas outlets are provided in a position relatively close to the treatment space using the active gas, or a second improved structure having multiple discharge spaces corresponding to the multiple gas outlets. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] International Publication No. 2019 / 138456 Summary of the Invention [Problem to be solved by the invention]

[0008] The first improved structure described above employs a method of providing multiple gas outlets for one dielectric film, but since the active gas ejected from each of the multiple gas outlets basically has only one direction, there is a problem in that the active gas cannot be uniformly supplied to the processing space in which the processing object is placed.

[0009] Like the first improved structure, the second improved structure described above has the problem that the active gas ejected from each of the multiple gas outlets basically has only one direction, making it impossible to supply active gas uniformly to the processing space.

[0010] An object of the present disclosure is to provide an active gas generating apparatus capable of solving the above-mentioned problems and supplying a uniform amount of active gas to a processing space. [Means for solving the problem]

[0011] The active gas generation device of the present disclosure is an active gas generation device that generates an active gas by activating a raw material gas supplied to a discharge space, and includes an electrode unit and a conductive housing that houses the electrode unit in a space within the housing, the housing having a housing bottom including a flat surface and a conductor accommodating space recessed in a depth direction from the flat surface, the electrode unit includes a first electrode configuration, a second electrode configuration provided below the first electrode configuration, and a reference potential conductor provided below the second electrode configuration and accommodated in the conductor accommodating space, the first electrode configuration includes a first electrode configuration, a second electrode configuration, and a reference potential conductor that is disposed below the second electrode configuration and accommodated in the conductor accommodating space, the second electrode configuration portion includes a second electrode dielectric film and a first electrode conductive film formed on an upper surface of the first electrode dielectric film, the second electrode configuration portion includes a second electrode dielectric film and a second electrode conductive film formed on a lower surface of the second electrode dielectric film, the reference potential conductor has an active gas buffer space at an upper portion, the second electrode configuration portion is disposed so as to close the active gas buffer space, the second electrode dielectric film has a dielectric through hole penetrating the second electrode dielectric film in a region overlapping with the active gas buffer space in a plan view, and the second electrode conductive film has a through hole penetrating the second electrode dielectric film in a region overlapping with the active gas buffer space in a plan view, a conductive film opening in a region overlapping with an active gas buffer space, the conductive film opening overlapping with the dielectric through hole in a plan view, a space where the first electrode dielectric film and the second electrode dielectric film face each other is defined as a main dielectric space, the discharge space includes a main discharge space which is a region where the first and second electrode conductive films overlap in a plan view in the main dielectric space, an AC voltage is applied to the first electrode conductive film, and the second electrode conductive film is set to a reference potential via the housing and the reference potential conductor, and the active gas generator is the discharge space includes, in addition to the main discharge space, an auxiliary discharge space including the dielectric through-hole and a part of the active gas buffer space; the active gas output from the gas outlets is defined as a plurality of partial active gases; the bottom of the housing has a housing opening in a region overlapping with the active gas buffer space in a plan view; and the partial active gases are guided downward through the housing opening.The housing opening includes a tapered region having a tapered shape in which the opening area becomes wider as it goes downward, the plurality of gas outlets are provided in such a manner that they approach each other as they go downward so that the plurality of partially activated gases collide in a collision region, and the collision region is located within the tapered region or above the tapered region. Effect of the Invention

[0012] The gas outlets in the active gas generation device of the present disclosure have the above-mentioned characteristics, and therefore, when the partially activated gases collide with each other in the collision region, the flow direction of each of the partially activated gases is dispersed from one direction to multiple diffusion directions.

[0013] Since the impingement region is within or above the tapered region, the diffused partially activated gases flow in a direction that follows the tapered shape of the tapered region as they move downward.

[0014] Therefore, the active gas containing the plurality of partially activated gases flows from the tapered region toward the processing space below while diffusing in a direction along the tapered shape. As a result, the active gas generating device of the present disclosure can supply a uniform active gas to the processing space.

[0015] The objects, features, aspects, and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings. [Brief description of the drawings]

[0016] [Figure 1] 1 is a plan view that illustrates a schematic planar structure of an active gas generation apparatus according to a first embodiment of the present disclosure. [Diagram 2] 2 is a cross-sectional view showing a cross-sectional structure taken along the line AA in FIG. 1. [Diagram 3] FIG. 1 is an explanatory diagram (part 1) that illustrates a schematic planar structure of an electrode unit. [Figure 4] 4 is an explanatory diagram showing a cross-sectional structure taken along the line BB in FIG. 3. [Diagram 5]FIG. 2 is an explanatory diagram (part 2) that illustrates a schematic planar structure of the electrode unit. [Figure 6] 6 is an explanatory diagram showing a cross-sectional structure of cross section taken along line CC of FIG. 5. [Figure 7] FIG. 2 is an explanatory diagram illustrating a planar structure of a housing. [Figure 8] FIG. 2 is an explanatory diagram illustrating a cross-sectional structure of a housing. [Figure 9] FIG. 2 is an explanatory diagram illustrating a planar structure of a high-voltage side dielectric film. [Figure 10] FIG. 4 is an explanatory diagram illustrating a cross-sectional structure of a high-voltage side dielectric film. [Figure 11] FIG. 2 is an explanatory diagram illustrating a planar structure of a ground-side dielectric film. [Figure 12] 4 is an explanatory diagram illustrating a cross-sectional structure of a ground-side dielectric film. FIG. [Figure 13] FIG. 2 is an explanatory diagram illustrating a planar structure of a power supply body. [Figure 14] FIG. 2 is an explanatory diagram illustrating a cross-sectional structure of a power supply body. [Figure 15] FIG. 2 is an explanatory diagram illustrating a planar structure of a ground conductor. [Figure 16] FIG. 4 is an explanatory diagram illustrating a cross-sectional structure of a ground conductor. [Figure 17] FIG. 17 is an explanatory diagram showing details of a region of interest in FIG. 16. [Figure 18] FIG. 2 is an explanatory diagram illustrating a planar structure of a cover dielectric film. [Figure 19] FIG. 2 is an explanatory view illustrating a cross-sectional structure of a cover dielectric film. [Figure 20] FIG. 4 is an explanatory diagram illustrating a planar structure of a ground-side electrode configuration portion. [Figure 21] FIG. 4 is an explanatory diagram illustrating a cross-sectional structure of a ground-side electrode configuration portion. [Figure 22] FIG. 2 is an explanatory diagram illustrating a planar structure of a shielding dielectric film. [Figure 23] FIG. 2 is an explanatory diagram illustrating a cross-sectional structure of a shielding dielectric film. [Figure 24] 2 is an explanatory diagram illustrating a planar structure of a dielectric film support member; FIG. [Diagram 25] 3 is an explanatory diagram illustrating a schematic cross-sectional structure of a dielectric film support member. FIG. [Figure 26] 3 is an explanatory diagram illustrating a planar structure of a dielectric film suppressing member; FIG. [Figure 27] 3 is an explanatory diagram illustrating a schematic cross-sectional structure of a dielectric film suppressing member. FIG. [Figure 28] FIG. 28 is an explanatory diagram showing details of a region of interest in FIG. 27. [Figure 29] FIG. 4 is an explanatory diagram illustrating a planar structure of a pressing member. [Diagram 30] FIG. 4 is an explanatory diagram illustrating a cross-sectional structure of a pressing member. [Diagram 31] 3 is an explanatory diagram illustrating a typical ejection form of active gas from an electrode unit in the active gas generation device of the first embodiment. FIG. [Diagram 32] 3 is an explanatory diagram showing a schematic diagram of an ideal form of active gas ejection in the electrode unit of the first embodiment. FIG. [Diagram 33] 10 is an explanatory diagram showing a cross-sectional structure of an electrode unit in an active gas generation device according to a second embodiment. FIG. [Diagram 34] 10 is a first explanatory diagram illustrating a schematic structure of a ground conductor according to the second embodiment. FIG. [Diagram 35] 13 is an explanatory diagram (part 2) that illustrates a schematic structure of the ground conductor according to the second embodiment. FIG. [Diagram 36] 13 is an explanatory diagram (part 1) that illustrates a schematic cross-sectional structure of a plurality of gas ejection ports in the second embodiment. FIG. [Figure 37] 13 is an explanatory diagram (part 2) that illustrates a schematic cross-sectional structure of a plurality of gas ejection ports in the second embodiment. FIG. [Figure 38] FIG. 11 is an explanatory diagram (part 1) showing the form of ejection of active gas within an opening of a housing of an electrode unit according to a second embodiment. [Figure 39] FIG. 11 is an explanatory diagram (part 2) showing the form of ejection of active gas within the opening of the housing of the electrode unit of the second embodiment. [Diagram 40] FIG. 11 is an explanatory diagram (part 3) showing the form of ejection of active gas within the opening of the housing of the electrode unit of the second embodiment. [Diagram 41] FIG. 11 is an explanatory diagram (part 4) showing the form of ejection of active gas within the opening of the housing of the electrode unit of the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] <Embodiment 1> FIG. 1 is a plan view that typically illustrates a planar structure of an active gas generator 71 according to a first embodiment of the present disclosure.

[0018] As shown in the figure, in an active gas generator 71, three electrode units 51-53 are housed in a housing 1. A raw material gas G1 is supplied to each of the electrode units 51-53 via a gas flow path 21. Then, each of the electrode units 51-53 activates the raw material gas G1 supplied to the discharge space 4 to generate an active gas G2.

[0019] Fig. 2 is a cross-sectional view showing the cross-sectional structure taken along the line AA in Fig. 1. Figs. 3 to 6 are explanatory views partially explaining the structure of the electrode unit 50. The electrode unit 50 corresponds to any one of the electrode units 51 to 53. The electrode units 51 to 53 have the same structure.

[0020] Fig. 3 is an explanatory diagram showing a schematic planar structure of the electrode unit 50. Fig. 4 is an explanatory diagram showing the cross-sectional structure of the cross section BB in Fig. 3. Figs. 3 and 4 are first explanatory diagrams showing the structure of the ground conductor 6 and its surroundings.

[0021] Fig. 5 is an explanatory diagram showing a schematic planar structure of the electrode unit 50. Fig. 6 is an explanatory diagram showing the cross-sectional structure of cross section CC in Fig. 5. Figs. 5 and 6 are second explanatory diagrams showing the detailed structure of the ground conductor 6 and its surroundings.

[0022] Figures 7 to 30 are explanatory diagrams showing details of the components of the electrode unit 50. Figures 7 and 8 are explanatory diagrams showing typically the structure of the housing 1. Figure 7 shows the planar structure of the housing 1, and Figure 8 shows the cross-sectional structure of the housing 1.

[0023] 9 and 10 are explanatory diagrams each showing a schematic structure of the high voltage side dielectric film 2. Fig. 9 shows the planar structure of the high voltage side dielectric film 2, and Fig. 10 shows the cross-sectional structure of the high voltage side dielectric film 2.

[0024] 11 and 12 are explanatory diagrams each showing a schematic structure of the ground side dielectric film 3. Fig. 11 shows the planar structure of the ground side dielectric film 3, and Fig. 12 shows the cross-sectional structure of the ground side dielectric film 3.

[0025] 13 and 14 are explanatory diagrams each showing a schematic structure of the current feeder 5. Fig. 13 shows the planar structure of the current feeder 5, and Fig. 14 shows the cross-sectional structure of the current feeder 5.

[0026] Fig. 15 to Fig. 17 are explanatory diagrams each showing a schematic structure of the ground conductor 6. Fig. 15 shows the planar structure of the ground conductor 6, Fig. 16 shows the cross-sectional structure of the ground conductor 6, and Fig. 17 shows details of a focused region R1 in Fig. 16.

[0027] 18 and 19 are explanatory views each showing a schematic structure of the cover dielectric film 8. Fig. 18 shows the planar structure of the cover dielectric film 8, and Fig. 19 shows the cross-sectional structure of the cover dielectric film 8.

[0028] Fig. 20 and Fig. 21 are explanatory diagrams each showing a schematic structure of the ground side electrode component E2. Fig. 20 shows the planar structure of the ground side electrode component E2, and Fig. 21 shows the cross-sectional structure of the ground side electrode component E2. The ground side electrode component E2 includes a combination structure of the ground side dielectric film 3, the conductive film 7, and the cover dielectric film 8.

[0029] 22 and 23 are explanatory diagrams each showing a schematic structure of the shielding dielectric film 9. Fig. 22 shows the planar structure of the shielding dielectric film 9, and Fig. 23 shows the cross-sectional structure of the shielding dielectric film 9.

[0030] 24 and 25 are explanatory diagrams each showing a schematic structure of the dielectric film support member 10. Fig. 24 shows the planar structure of the dielectric film support member 10, and Fig. 25 shows the cross-sectional structure of the dielectric film support member 10.

[0031] Fig. 26 to Fig. 28 are explanatory diagrams each showing a schematic structure of the dielectric film suppressing member 11. Fig. 26 shows the planar structure of the dielectric film suppressing member 11, Fig. 27 shows the cross-sectional structure of the dielectric film suppressing member 11, and Fig. 28 shows details of a focused region R2 in Fig. 27.

[0032] Fig. 29 and Fig. 30 are explanatory diagrams each showing a schematic structure of the pressing member 12. Fig. 29 shows the planar structure of the pressing member 12, and Fig. 30 shows the cross-sectional structure of the pressing member 12.

[0033] 1 to 30 each show the active gas generator 71, the electrode unit 50, or components of the electrode unit 50, and the shapes including the scale do not necessarily match between Fig. 1 to Fig. 30. Also, an XYZ orthogonal coordinate system is shown in each of Fig. 1 to Fig. 30.

[0034] The activated gas generating device 71 according to the first embodiment will be described below with reference to the above-mentioned Figs. 1 to 30 as appropriate.

[0035] (Overall structure) As shown in FIG. 1, the active gas generator 71 includes a plurality of electrode units 51-53, and a conductive housing 1 that houses the electrode units 51-53 in a housing internal space S1 (see FIG. 8).

[0036] As shown in FIGS. 2 and 7, the housing 1 has a housing bottom 1a including a flat surface 1F and a conductor accommodating space 6S recessed in the depth direction from the flat surface 1F.

[0037] As shown in FIG. 8, the housing 1 has a housing bottom 1a, a housing side 1b and a housing top 1c, and the housing bottom 1a, the housing side 1b and the housing top 1c form an internal housing space S1 that houses the electrode units 51-53 therein.

[0038] The electrode units 51 to 53 are accommodated in the housing internal space S1 of the housing 1 with the ground conductor 6 disposed in the conductor accommodating space 6S. As shown in Fig. 7, a source gas G1 supplied from the outside is supplied to a source gas flow space provided on the lower and side surfaces of the ground conductor 6 disposed in the conductor accommodating space 6S via a gas flow passage 21 provided in the housing bottom 1a.

[0039] The electrode unit 51 (50) includes a high-voltage side electrode component E1 which is a first electrode component, and a ground side electrode component E2 which is a second electrode component provided below the high-voltage side electrode component E1.

[0040] The electrode unit 51 is provided below the ground side electrode component E2, which is the second electrode component, and further includes a ground conductor 6, which is a reference potential conductor accommodated in the conductor accommodating space 6S. The ground conductor 6 is made of a conductor such as a metal.

[0041] The high-voltage side electrode configuration part E1 which is the first electrode configuration part includes a high-voltage side dielectric film 2 which is the first electrode dielectric film, and a power supply body 5 which is the first electrode conductive film formed on the upper surface of the high-voltage side dielectric film 2. The power supply body 5 which is the first electrode conductive film is provided on a power supply body arrangement recess 28 which is provided in the center of the high-voltage side dielectric film 2 which is the first electrode dielectric film.

[0042] The high voltage side dielectric film 2 is made of a dielectric material, and the power feeder 5 is made of a conductor such as a metal. For example, the power feeder 5 is made of a metal.

[0043] The ground-side electrode configuration portion E2 includes a ground-side dielectric film 3 which is a dielectric film for the second electrode, and a conductive film 7 which is a conductive film for the second electrode formed on the lower surface of the ground-side dielectric film 3. Since the conductive film 7 is thin, its illustration is omitted in Fig. 2 and the like, and the formation region of the conductive film 7 is shown in Figs. 20 and 21.

[0044] The ground side dielectric film 3 is made of a dielectric material, and the conductive film 7 is made of a conductor such as a metal.

[0045] The ground conductor 6, which is a reference potential conductor, has a non-penetrating active gas buffer space 68 at its upper part, and the ground side electrode component E2 is disposed so as to close the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 and the upper surface of the ground conductor 6 are in contact with each other.

[0046] The ground side dielectric film 3, which is the dielectric film for the second electrode, has a dielectric through hole 3h penetrating the ground side dielectric film 3 in a region overlapping with the active gas buffer space 68 in a planar view, and the conductive film 7, which is the conductive film for the second electrode, has a conductive film opening 7h in a region overlapping with the active gas buffer space 68 in a planar view, and the conductive film opening 7h overlaps with the dielectric through hole 3h in a planar view.

[0047] The housing bottom 1a of the housing 1 has a gas flow path 21 that receives the source gas G1 from the outside, and a source gas distribution space is provided between the ground conductor 6 and the conductor accommodating space 6S of the housing 1. The source gas distribution space includes a source gas buffer space 61, a slit space 62, and a side space 63, as described later.

[0048] The source gas G1 is introduced into the main discharge space of the discharge space 4 through the gas flow path 21 and the source gas flow space. Note that the main discharge space means the discharge space 4 in the dielectric space 18 between the high voltage side dielectric film 2 and the ground side dielectric film 3, as will be described later.

[0049] An AC voltage is applied from an AC power source 15 to the power supply 5, which is a conductive film for the first electrode, via electrical connection means such as electrical wiring or a lead-in terminal. Note that illustration of the electrical connection means is omitted in Fig. 2 and other figures.

[0050] On the other hand, the housing 1 is set to the ground potential, which is the reference potential, so that the conductive film 7, which is the conductive film for the second electrode, is set to the ground potential via the housing 1 and the ground conductor 6.

[0051] The electrode unit 51 (50) further includes auxiliary members such as a dielectric film supporting member 10, a dielectric film suppressing member 11, and a pressing member 12.

[0052] (Fixing of high voltage side dielectric film 2) The step portion 102 of the dielectric film support member 10 is provided on the flat surface 1F of the housing 1, and has an upper surface that serves as a support surface 10F that supports the high-voltage side dielectric film 2 from below. At this time, the dielectric film support member 10 is placed on the flat surface 1F so that the side surface of the dielectric film support member 10 and the side surface of the conductor accommodating space 6S of the housing bottom 1a of the housing 1 coincide with each other.

[0053] The dielectric film suppressing member 11 is a member for suppressing the high-voltage side dielectric film 2 from above, and does not overlap with the power feeder 5 in plan view. In other words, on the upper surface of the high-voltage side dielectric film 2, there is an exposed area EX2 where the dielectric film suppressing member 11 and the power feeder 5 are not formed.

[0054] 6, 27 and 28, the lower surface of the dielectric film suppressing member 11 has a dielectric contact region 112 that contacts the upper surface of the high-voltage side dielectric film 2 and a dielectric non-contact region 111 that does not contact the upper surface of the high-voltage side dielectric film 2. The dielectric contact region 112 is a region that contacts the high-voltage side dielectric film 2 and applies a load, while the dielectric non-contact region 111 is a region that does not contact the high-voltage side dielectric film 2 and protrudes toward the power feeder 5 on the upper surface of the high-voltage side dielectric film 2.

[0055] The dielectric contact region 112 overlaps with the peripheral region of the high-voltage side dielectric film 2 and the support surface 10F of the dielectric film support member 10 in plan view, while the dielectric non-contact region 111 overlaps with the middle region located inside the peripheral region of the high-voltage side dielectric film 2 in plan view. In other words, the middle region is the region adjacent to the power feeder 5 side from the peripheral region of the high-voltage side dielectric film 2.

[0056] The dielectric film suppressing member 11 is made of a metal or the like, has electrical conductivity, and is set to a ground potential, which is a reference potential, via the housing 1, the mounting bolt 31, and the pressing member 12. The mounting bolt 31 and the pressing member 12 are also electrically conductive.

[0057] Therefore, the high voltage side dielectric film 2 is pressed down from above by the dielectric film suppressing member 11 in the dielectric contact region 112. The combined structure of the dielectric film supporting member 10, the dielectric film suppressing member 11 and the pressing member 12 will be described in detail below.

[0058] As shown in FIG. 2, the pressing member 12 is disposed on the upper surface of the dielectric film support member 10, and the pressing member 12 and the dielectric film support member 10 are fixed onto the housing bottom 1a of the housing 1 by mounting bolts 31.

[0059] 24 and 25, the dielectric film support member 10 has a circular shape with a central opening 100 in the center in a plan view. A step structure consisting of a step portion 102 and a peripheral upper surface 101 is provided in an annular shape around the central opening 100. The upper surface of the step portion 102 becomes the support surface 10F. A plurality of through holes 10h are provided discretely in a circle in the peripheral upper surface 101 on the outer periphery side of the step portion 102 (support surface 10F).

[0060] 9 and 10, the high-voltage side dielectric film 2 has a circular shape with a power supply arrangement recess 28 in the center in a plan view. A peripheral surface area 27 is provided in an annular shape around the power supply arrangement recess 28. The high-voltage side dielectric film 2 also has a circular recess bottom surface 26 in a plan view, and the bottom surface around the recess bottom surface 26 becomes a circular protrusion bottom surface 23 in a plan view.

[0061] 13 and 14, the power feeder 5 has a cylindrical shape. The power feeder 5 is arranged on the upper surface of the high-voltage side dielectric film 2 with the bottom surface of the power feeder 5 positioned on the power feeder arrangement recess 28 of the high-voltage side dielectric film 2.

[0062] An AC voltage is applied to the power supply 5, which is the conductive film for the first electrode, from the AC power source 15. As shown in Fig. 5, the power supply arrangement recess 28 includes the power supply 5 in plan view and has a planar shape that is slightly wider than the power supply 5.

[0063] The high-voltage side dielectric film 2 is disposed on the dielectric film support member 10 in such a manner that the support surface 10F of the dielectric film support member 10 contacts the convex bottom surface 23 of the high-voltage side dielectric film 2. The high-voltage side dielectric film 2 and the dielectric film support member 10 are in contact with each other via a sealing material such as an O-ring (not shown).

[0064] 26 and 27, the dielectric film suppressing member 11 has a circular shape with a central opening 110 in the center in a plan view. The annular lower surface region provided on the outer periphery of the central opening 110 is the dielectric non-contact region 111, and the annular lower surface region provided on the outer periphery of the dielectric non-contact region 111 is the dielectric contact region 112.

[0065] 28, the dielectric contact region 112 protrudes downward (in the -Z direction) further than the dielectric non-contact region 111, and is in contact with the upper surface U2 of the high-voltage side dielectric film 2. On the other hand, since a gap SP11 exists between the dielectric non-contact region 111 and the upper surface U2 of the high-voltage side dielectric film 2, the dielectric non-contact region 111 is not in contact with the upper surface U2 of the high-voltage side dielectric film 2.

[0066] 29 and 30, the pressing member 12 has a circular shape with a central opening 120 in the center in a plan view. A plurality of inner through-holes 121h are provided in a circular pattern in an outer peripheral region 125 on the outer periphery side of the central opening 120, and a plurality of outer through-holes 122h are provided in a circular pattern on the outer periphery side of the plurality of inner through-holes 121h.

[0067] In this manner, a plurality of inner through holes 121h and a plurality of outer through holes 122h are provided in the outer peripheral region 125 of the pressing member 12. Each of the plurality of inner through holes 121h is a tapped through hole.

[0068] A part of the outer peripheral region 125 of the pressing member 12 having the above-mentioned structure is placed on the dielectric film support member 10, and the dielectric film support member 10 and the pressing member 12 are fixed to the housing bottom 1a of the housing 1 by a plurality of mounting bolts 31. The threaded portions of the plurality of mounting bolts 31 pass through the plurality of outer through-holes 122h and the plurality of through-holes 10h, and are attached to the housing bottom 1a.

[0069] As shown in FIGS. 2 to 6, the pressing member 12 is disposed in a region overlapping with the dielectric film supporting member 10 and the dielectric film suppressing member 11 in plan view.

[0070] On the other hand, a plurality of suppression auxiliary members 32 are attached to the pressing member 12 in a manner that they penetrate the plurality of inner through-holes 121h of the pressing member 12. The suppression auxiliary members 32 may be bolts, setscrews, or the like. The plurality of suppression auxiliary members 32 are attached in the plurality of inner through-holes 121h so as to press the dielectric film suppressing member 11. The plurality of suppression auxiliary members 32 are provided at positions overlapping the dielectric contact region 112 of the dielectric film suppressing member 11 and the convex bottom surface 23 of the high voltage side dielectric film 2 in a plan view.

[0071] Therefore, the high voltage side dielectric film 2 is pressed down from the upper dielectric contact region 112 by the dielectric film suppressing member 11 receiving the pressing force of the plurality of suppression auxiliary members 32 .

[0072] As described above, in the electrode unit 50 of the active gas generator 71 of the first embodiment, the high-voltage side dielectric film 2, which is the first electrode dielectric film, is suppressed from the upper dielectric contact area 112 by the dielectric film suppressing member 11 which receives the pressing force of the multiple suppression auxiliary members 32. Therefore, the area where the load is applied to the high-voltage side dielectric film 2 by the dielectric film suppressing member 11 can be limited to only the area below the dielectric contact area 112.

[0073] As a result, the active gas generating apparatus 71 of embodiment 1 can stably fix the high-pressure side dielectric film 2 between the dielectric contact area 112 of the dielectric film suppressing member 11 and the support surface 10F of the dielectric film support member 10 without applying unnecessary bending stress to the high-pressure side dielectric film 2.

[0074] The dielectric film suppressing member 11 is set to a ground potential which is a reference potential and has electrical conductivity. The dielectric non-contact region 111 of the dielectric film suppressing member 11 overlaps with the middle region of the high voltage side dielectric film 2 in plan view.

[0075] Therefore, the electrode unit 50 can reduce the electric field strength of the power supply 5 by using the dielectric film suppression member 11 having the dielectric non-contact area 111 to lower the potential of the intermediate area of ​​the high-voltage side dielectric film 2, thereby lowering the potential in the outer diameter direction between the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0076] As a result, the electrode unit 50 in the active gas generator 71 of the first embodiment can reliably prevent dielectric breakdown in the gap 20 between the high voltage side dielectric film 2 and the dielectric film support member 10.

[0077] (Ground conductor 6) As shown in Figures 15 to 17, the ground conductor 6 accommodated in the conductor accommodating space 6S of the housing 1 has a circular shape in a plan view, and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0078] The raw material gas buffer space 61 is formed in a flat circular ring shape and is connected to the gas flow path 21 as shown in FIG. 2, so that the raw material gas G1 supplied from the outside can be taken into the raw material gas buffer space 61 via the gas flow path 21.

[0079] 17, a plurality of slit spaces 62 are provided at intervals around the source gas buffer space 61. As shown in FIG. 17, each of the plurality of slit spaces 62 is connected to the source gas buffer space 61, and the source gas G1 can be circulated from the source gas buffer space 61 to the slit spaces 62.

[0080] As shown in Figs. 6 and 17, the side space 63 is a gap space between the inner peripheral side surface of the conductor accommodating space 6S and the outer peripheral side surface of the ground conductor 6, and is provided in an annular shape in plan view.

[0081] Since the dielectric film support member 10 and the ground conductor 6 have the positional relationship shown in FIGS. 3 and 4, the source gas G1 that has passed through the side space 63 is supplied to the lower side region R10 of the dielectric film support member 10.

[0082] In this manner, the source gas buffer space 61 is provided on the lower surface side of the ground conductor 6, and receives the source gas G1 via the gas flow path 21. The plurality of slit spaces 62 are provided on the lower surface side of the ground conductor 6, and are connected to the source gas buffer space 61.

[0083] The side space 63 is provided on the side surface of the ground conductor 6 and is connected to the plurality of slit spaces. As described above, the source gas flow space includes the source gas buffer space 61, the plurality of slit spaces 62, and the side space 63.

[0084] Therefore, the source gas G1 supplied to the gas flow passage 21 from the outside is guided to the discharge space 4 via the source gas buffer space 61, the slit space 62 and the side space 63.

[0085] Each of the multiple slit spaces 62 is set to a narrow space through which the raw material gas does not easily flow compared to the raw material gas buffer space 61 so that the raw material gas G1 flows into each of the multiple slit spaces 62 after being temporarily retained in the raw material gas buffer space 61. That is, the multiple slit spaces 62 have a smaller conductance, which is a coefficient representing the ease of flow of the raw material gas G1, compared to the raw material gas buffer space 61 and the side space 63.

[0086] As a result, the active gas generation device 71 of the first embodiment can spatially uniformly supply the raw material gas G1 to the discharge space 4. That is, the raw material gas G1 is uniformly supplied from the peripheral portion of the circular dielectric space 18 in a plan view toward the central discharge space 4.

[0087] By lowering the conductance of the slit space 62, the pressure difference between the source gas buffer space 61 and the side space 63 increases, and the variation in the flow rate of the source gas G1 flowing through each of the multiple slit spaces 62 is reduced. Therefore, the source gas G1 is uniformly supplied toward the discharge space 4. The flow rate of the source gas G1 is adjusted by, for example, a mass flow controller (MFC) or the like provided upstream of the gas flow path 21.

[0088] Therefore, in a typical active gas generator, if the source gas G1 is not supplied uniformly, the time it takes for the source gas G1 to pass through the discharge space 4 changes, resulting in a problem of a deterioration in the generation efficiency of the active gas G2. The active gas generator 71 of the first embodiment can supply the source gas G1 uniformly, so the above problem does not occur.

[0089] (Ground electrode component E2 and active gas buffer space 68) As described above, the ground side electrode configuration portion E2, which is the second electrode configuration portion, includes the ground side dielectric film 3 and the conductive film .

[0090] As shown in FIGS. 11 and 12, the ground side dielectric film 3 has a circular shape in a plan view, and has a circular dielectric through-hole 3h in the center.

[0091] 18 and 19, the cover dielectric film 8 is circular in plan view and has a circular cover through hole 8h in the center. The cover dielectric film 8 is desirably made of the same material as the ground side dielectric film 3. This is to prevent distortion when the thermal expansion coefficients of the cover dielectric film 8 and the ground side dielectric film 3 differ. Materials with similar thermal expansion coefficients may be selected as the materials for the cover dielectric film 8 and the ground side dielectric film 3.

[0092] As shown in FIGS. 20 and 21, the conductive film 7 has a circular shape in plan view, and has a conductive film opening 7h in the center that is also circular in plan view.

[0093] The dielectric through hole 3h and the conductive film opening 7h each overlap with the active gas buffer space 68 in a planar view, and as shown in FIG. 21, the conductive film opening 7h includes the dielectric through hole 3h in a planar view and has a wider shape than the dielectric through hole 3h.

[0094] The conductive film 7 is provided on the lower surface of the ground-side dielectric film 3 such that the respective centers of the ground-side dielectric film 3 and the conductive film 7 are aligned. The diameter of the conductive film 7 is set to be approximately the same as that of the ground-side dielectric film 3, but the formation area of ​​the conductive film 7 is narrower than the formation area of ​​the ground-side dielectric film 3 because a conductive film opening 7h wider than the dielectric through opening 3h is provided in the center.

[0095] The conductive film inner boundary 7e, which is the circumferential outer periphery of the conductive film opening 7h, is the end of the conductive film 7 on the dielectric through opening 3h side, and the conductive film 7 is not formed in the region inside the conductive film inner boundary 7e. The conductive film inner boundary 7e is the electrode boundary line of the conductive film 7. Therefore, as shown in Fig. 21, the formation region A7 of the conductive film 7 on the lower surface of the ground side dielectric film 3 is the region from the outer periphery of the ground side dielectric film 3 to the conductive film inner boundary 7e.

[0096] 20 and 21, the cover dielectric film 8 is provided in a circular shape from above the lower surface of the ground-side dielectric film 3 to above the lower surface of the conductive film 7, including the conductive film inner boundary 7e. However, the cover dielectric film 8 has a cover through hole 8h at its center. That is, the outer diameter of the conductive film opening 7h of the conductive film 7 is shorter than the outer diameter of the cover dielectric film 8.

[0097] The cover through hole 8h has a shape similar to that of the dielectric through hole 3h, and the cover through hole 8h is included in the conductive film opening 7h and has a shape narrower than the conductive film opening 7h. Therefore, the cover dielectric film 8 covers the conductive film inner boundary 7e (electrode boundary line) of the conductive film 7. The lower surface of the conductive film 7 that is not covered by the cover dielectric film 8 and the upper surface of the ground conductor 6 are in contact with each other.

[0098] As shown in Figures 15 and 16, the active gas buffer space 68 provided above the ground conductor 6 has a circular shape in a plan view, and a plurality of gas outlets 69 are provided around the bottom surface 65 of the active gas buffer space 68.

[0099] 15 and 16 also show the formation region of the cover dielectric film 8. As shown in these figures, the outer periphery of the cover dielectric film 8 is substantially the same as the outer periphery of the buffer space 68 for active gas.

[0100] As shown in FIGS. 2 and 16, a shielding dielectric film 9 is provided on a bottom surface 65 of the active gas buffer space 68 .

[0101] As shown in FIGS. 22 and 23, the shielding dielectric film 9 is formed to a predetermined thickness and has a circular shape in plan view.

[0102] The shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 in such a manner that the central positions of the active gas buffer space 68 and the shielding dielectric film 9 are aligned with each other.

[0103] As shown in FIGS. 15 and 16, the gas outlets 69 overlap with the cover dielectric film 8 in plan view, but do not overlap with the dielectric through holes 3h and the cover through holes 8h in plan view.

[0104] 16, a plurality of gas outlets 69 are provided around the bottom surface 65 of the active gas buffer space 68, penetrating the ground conductor 6. That is, the plurality of gas outlets 69 are provided in the peripheral region of the shielding dielectric film 9 in plan view.

[0105] In the active gas generator 71 of the first embodiment having such a structure, the source gas G1 is supplied from the outside of the metal housing 2 to the discharge space 4 via the gas flow passage 21 and the source gas distribution space as described above.

[0106] When the raw material gas G1 is supplied to the discharge space 4 in which the dielectric barrier discharge is occurring, the raw material gas G1 is activated to become an active gas G2, which passes through the dielectric through hole 3h and the cover through hole 8h and is introduced into the active gas buffer space 68. The active gas G2 that has entered the active gas buffer space 68 passes through a plurality of gas outlets 69 provided on the bottom surface of the active gas buffer space 68 and is supplied to the subsequent processing space.

[0107] In the active gas generator 71 of the first embodiment having such a configuration, the main dielectric space where the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, and the ground side dielectric film 3, which is the dielectric film for the second electrode, face each other is the dielectric space 18. The dielectric space 18 has a circular shape in a plan view. Also, the space where the high-voltage side dielectric film 2 and the shield dielectric film 9 face each other is defined as an auxiliary dielectric space. The discharge space 4 includes a main discharge space where the power feeder 5 and the conductive film 7 overlap each other in a plan view within the dielectric space 18.

[0108] In order to form the above-mentioned main discharge space, the high-voltage side dielectric film 2 and the ground side dielectric film 3 are arranged in correspondence with each other so as to be at a certain distance in the height direction (Z direction), and the above-mentioned main discharge space of the discharge space 4 exists in the dielectric space 18 between the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0109] The discharge space 4 further includes an auxiliary discharge space 44 that is formed within the auxiliary dielectric space by the dielectric through hole 3h, the cover through hole 8h, and a part of the active gas buffer space 68 on the shield dielectric film 9.

[0110] The bottom surface area below the bottom surface 65 of the ground conductor 6 is used as a conductive film for the ground electrode set at ground potential, and a discharge voltage is applied between the power supply 5, which receives an AC voltage from the AC power source 15, and the conductive film for the ground electrode, thereby generating an auxiliary discharge space 44.

[0111] As described above, the auxiliary discharge space 44 includes the dielectric through hole 3h, the cover through hole 8h, and a part of the active gas buffer space 68. In this manner, the discharge space 4 formed in the first embodiment includes the main discharge space in the dielectric space 18 and the auxiliary discharge space 44.

[0112] In the active gas generation device 71 of the first embodiment, the paths from the auxiliary discharge space 44 to each of the plurality of gas outlets 69 are defined as active gas flow paths.

[0113] In the active gas generating device 71 of embodiment 1, the auxiliary discharge space 44, which is part of the discharge space 4, includes the dielectric through hole 3h, the cover through hole 8h, and part of the buffer space 68 for active gas, so that the volume of the active gas flow path from the auxiliary discharge space 44 to the multiple gas outlets 69 can be kept to the minimum necessary, thereby suppressing the amount of deactivation of the active gas G2.

[0114] Furthermore, the cover dielectric film 8 in the ground side electrode component E2 of the electrode unit 50 covers the conductive film inner boundary 7e, which is the electrode boundary line of the conductive film 7, within the active gas buffer space 68, and overlaps with the multiple gas outlets 69 in a planar view, thereby suppressing the surface deactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7.

[0115] As a result, the active gas generation device 71 of the first embodiment can supply a high-concentration active gas G2 from the multiple gas outlets 69 to the downstream processing space.

[0116] The electrode unit 50 of the first embodiment has the above-described structure, and therefore the portions facing the discharge space 4 are only the components made of dielectric materials, which are insulators (high voltage side dielectric film 2, ground side dielectric film 3, cover dielectric film 8, and shield dielectric film 9). Metal materials are easily ionized when facing the discharge, and metal ions are contained in the gas, which can cause contamination. On the other hand, dielectrics are not easily ionized even when facing the discharge, and therefore contamination of the gas can be prevented.

[0117] (Housing opening 41) 2, the housing bottom 1a of the housing 1 has a housing opening 41. The housing opening 41 is provided in a region overlapping with the active gas buffer space 68 in a plan view, and penetrates the housing bottom 1a.

[0118] Therefore, the active gas G2 ejected from the plurality of gas ejection ports 69 is guided through the housing opening 41 into the processing space below.

[0119] As shown in FIG. 2, the housing opening 41 provided in the housing bottom 1a has an opening area that increases downward, and has a tapered shape having a lowermost outer peripheral edge 41L, as shown in FIGS.

[0120] In the active gas generation device 71 of the first embodiment, the housing opening 41 provided in the housing bottom 1a of the housing 1 has a tapered shape in which the opening area becomes wider toward the bottom.

[0121] Therefore, the active gas generation apparatus 71 of embodiment 1 can minimize losses caused by the active gas G2 ejected from the multiple gas outlets 69 colliding with the bottom 1a of the housing, and can supply high-concentration active gas G2 to the processing space below.

[0122] <Embodiment 2> (Problem of the first embodiment) In the active gas generation device 71 of the above-mentioned embodiment 1, the active gas G2 is supplied from the active gas buffer space 68 to the downstream processing space located below through the multiple gas outlets 69. In the following description, the active gas G2 from the multiple gas outlets 69 is defined as multiple partially activated gases.

[0123] Fig. 31 is an explanatory diagram showing a typical ejection form of active gas G2 from electrode unit 50 (51-53) in active gas generation device 71 of embodiment 1. Fig. 32 is an explanatory diagram showing a typical ejection form of active gas G2 ideally in electrode unit 50. Figs. 31 and 32 correspond to cross section AA in Fig. 1, for example. Each of Figs. 31 and 32 shows an XYZ orthogonal coordinate system.

[0124] As shown in FIG. 31, in the electrode unit 50 (51-53) provided in the active gas generation device 71 of embodiment 1, the multiple gas outlets 69 are arranged so that they move away from each other in the downward direction so as to prevent collisions between the multiple partially activated gases.

[0125] However, when the spatial pressure p0 in the active gas buffer space 68 is significantly different from the spatial pressure p1 in the subsequent processing space, for example, when {(p1 / p0)<0.5}, the multiple partially activated gases ejected from the multiple gas ejection ports 69 flow in only one direction, called a choke flow, as shown by the gas flow FGX in Figure 31, and the multiple partially activated gases each proceed in a straight line without diffusing.

[0126] The active gas generation apparatus 71 of embodiment 1 has multiple gas outlets 69 for each electrode unit 50 in order to supply a uniform active gas G2 to the downstream processing space, and further adopts a structure in which multiple electrode units 50 are provided as electrode units 51 to 53 in order to supply active gas G2 to a processing space having a relatively wide area.

[0127] However, each of the multiple partially activated gases ejected from each electrode unit 50 is supplied to the processing space in the linear gas flow FGX shown in FIG. 31, and does not become the multi-directionally diffused gas flow FGY shown in FIG. 32.

[0128] In this way, the partially activated gas ejected from each of the gas ejection ports 69 of the electrode unit 50 basically has only one directionality. Therefore, the activated gas generation device 71 of the first embodiment has a problem that it cannot supply a uniform activated gas G2 to the processing space, similar to the first and second improved structures described in the section [Problems to be Solved by the Invention].

[0129] The activated gas generator 75 according to the second embodiment described below is intended to solve the above problems.

[0130] (Structure of the second embodiment) FIG. 33 is an explanatory diagram showing a cross-sectional structure of an electrode unit 55 in an active gas generation device 75 according to the second embodiment.

[0131] The overall configuration of the active gas generator 75 is similar to that of the active gas generator 71 shown in Fig. 1. Therefore, the electrode unit 55 shown in Fig. 33 corresponds to any one of the electrode units 51 to 53 in the active gas generator 75 having the overall configuration shown in Fig. 1.

[0132] That is, like the active gas generation apparatus 71 of embodiment 1, the active gas generation apparatus 75 of embodiment 2 includes electrode units 51-53 as multiple electrode units, and a conductive housing 1 that houses the electrode units 51-53 in an internal space S1 of the housing (see FIG. 8).

[0133] The electrode unit 55 of the second embodiment is characterized in that the ground conductor 6 of the electrode unit 50 of the first embodiment is replaced with a ground conductor 60.

[0134] In the following, the same components as those of the electrode unit 50 of the first embodiment are denoted by the same reference numerals, and the characteristic features of the electrode unit 55 of the fourth embodiment will be mainly described.

[0135] 33, the electrode unit 55 is provided below the ground-side electrode component E2 including the ground-side dielectric film 3, and includes a ground conductor 60 which is a reference potential conductor accommodated in the conductor accommodating space 6S. The ground conductor 60 is made of a conductor such as a metal.

[0136] The electrode unit 55 of the second embodiment is accommodated in the housing internal space S1 of the housing 1 with the ground conductor 60 disposed in the conductor accommodating space 6S. A source gas G1 supplied from the outside is supplied to a source gas flow space provided on the lower and side surfaces of the ground conductor 60 disposed in the conductor accommodating space 6S via a gas flow passage 21 provided in the housing bottom 1a.

[0137] (Ground conductor 60) Figures 34 and 35 are explanatory diagrams each showing a schematic structure of the ground conductor 60. Figure 34 shows the planar structure of the ground conductor 60, and Figure 35 shows the cross-sectional structure of the ground conductor 60. Each of Figures 34 and 35 shows an XYZ orthogonal coordinate system.

[0138] The ground conductor 60, which is a reference potential conductor, has a non-penetrating active gas buffer space 68 at its upper part, and the ground-side electrode component E2 including the ground-side dielectric film 3 is disposed so as to close the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 and the upper surface of the ground conductor 60 are in contact with each other.

[0139] As in the first embodiment, the housing 1 is set to the ground potential, which is the reference potential, and therefore the conductive film 7 is set to the ground potential via the housing 1 and the ground conductor 60.

[0140] The ground conductor 60 accommodated in the conductor accommodating space 6S of the housing 1 has a circular shape in a plan view as shown in FIG. 34, and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0141] Similar to the ground conductor 6 in the first embodiment, a source gas flow space including a source gas buffer space 61 , a plurality of slit spaces 62 and a side space 63 is provided for the ground conductor 60 .

[0142] Therefore, the source gas G1 supplied to the gas flow passage 21 from the outside is guided to the discharge space 4 via the source gas buffer space 61, the slit space 62 and the side space 63.

[0143] Therefore, like the active gas generator 71 of the first embodiment, the active gas generator 75 of the second embodiment can supply the raw material gas G1 to the discharge space 4 spatially uniformly.

[0144] As shown in Figures 34 and 35, the active gas buffer space 68 provided above the ground conductor 60 has a circular shape in a plan view, and a plurality of gas outlets 70 are provided around the bottom surface 65 of the active gas buffer space 68.

[0145] Similar to the gas outlets 69 of the first embodiment, the gas outlets 70 overlap the cover dielectric film 8 in plan view, but do not overlap the dielectric through hole 3h and the cover through hole 8h in plan view.

[0146] 33 to 35, a plurality of gas outlets 70 are provided around the bottom surface 65 of the active gas buffer space 68, penetrating the ground conductor 60. That is, the plurality of gas outlets 70 are provided in the peripheral region of the shielding dielectric film 9 in plan view.

[0147] When the raw material gas G1 is supplied to the discharge space 4 in which the dielectric barrier discharge is occurring, the raw material gas G1 is activated to become an active gas G2, which passes through the dielectric through hole 3h and the cover through hole 8h and is introduced into the active gas buffer space 68. The active gas G2 that has entered the active gas buffer space 68 passes through a plurality of gas outlets 70 provided on the bottom surface of the active gas buffer space 68 and is supplied to the subsequent processing space.

[0148] In the active gas generation device 75 of the second embodiment, the paths from the auxiliary discharge space 44 to each of the plurality of gas outlets 70 are defined as active gas flow paths.

[0149] In the active gas generating device 75 of embodiment 2, the auxiliary discharge space 44, which is part of the discharge space 4, includes the dielectric through hole 3h, the cover through hole 8h, and part of the buffer space 68 for active gas, so that the volume of the active gas flow path from the auxiliary discharge space 44 to the multiple gas outlets 70 can be kept to the minimum necessary, thereby suppressing the amount of deactivation of the active gas G2.

[0150] Furthermore, the cover dielectric film 8 in the ground side electrode component E2 of the electrode unit 55 covers the conductive film inner boundary 7e, which is the electrode boundary line of the conductive film 7, within the active gas buffer space 68, and overlaps with the multiple gas outlets 70 in a planar view, thereby suppressing the surface deactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7.

[0151] As a result, the active gas generation device 75 of the second embodiment can supply a high concentration of active gas G2 from the multiple gas outlets 70 to the downstream processing space, similarly to the first embodiment.

[0152] The housing bottom 1a of the housing 1 has a housing opening 41 in an area that overlaps with the active gas buffer space 68 in a planar view, and the active gas G2 ejected from the multiple gas outlets 70 is guided through the housing opening 41 to the processing space below.

[0153] In the active gas generation device 75 of the second embodiment, the housing opening 41 provided in the housing bottom 1a of the housing 1 has a tapered shape in which the opening area becomes wider toward the bottom.

[0154] Therefore, similar to embodiment 1, the active gas generation apparatus 75 of embodiment 2 can suppress losses caused by the active gas G2 ejected from the multiple gas outlets 70 colliding with the bottom 1a of the housing, and can supply a relatively high concentration of active gas G2 to the processing space below.

[0155] (Multiple gas outlets 70) The active gas G2 ejected from the gas outlets 70 provided in the electrode unit 55 of the second embodiment is supplied to a downstream processing space located below. Here, the active gas ejected from the gas outlets 70 is defined as a plurality of partially activated gases.

[0156] In the electrode unit 55 of the second embodiment, the partially activated gases ejected from the gas ejection ports 70 are guided downward through the housing opening 41.

[0157] Figures 36 and 37 are explanatory diagrams that typically show the cross-sectional structure of a plurality of gas jets 70, and Figures 36 and 37 respectively correspond to the DD cross-sectional structure of Figure 34. Each of Figures 36 and 37 shows an XYZ orthogonal coordinate system.

[0158] 36 and 37, the housing opening 41 includes an upper region 41a having a constant opening area in the height direction (Z direction) and a lower tapered region 41t that is a tapered region whose opening area becomes wider toward the bottom. In the housing opening 41, the lower tapered region 41t is a tapered region that is provided below the upper region 41a.

[0159] 37, a coordinate position slightly lower than the center position of the boundary line between the upper region 41a and the lower tapered region 41t is shown as a collision point P80. The collision point P80 exists within a collision region 80 described later, and is the center of the collision region 80.

[0160] In the electrode unit 55 of the first embodiment, the gas outlets 70 are provided in such a manner that they approach each other downwardly so that the partially activated gases collide with each other at a collision point P80.

[0161] The following is a detailed description of the structure of the multiple gas outlets 70. Although two gas outlets 70 are shown in Figures 36 and 37, three or more gas outlets 70 are provided as shown in Figure 34.

[0162] In the following, of the two gas outlets 70 shown in each of Figures 36 and 37, the gas outlet 70 on the right side (+X direction side) in the figures will be labeled as gas outlet 70(1), and the gas outlet 70 on the left side (-X direction side) in the figures will be labeled as gas outlet 70(2).

[0163] As described above, the gas outlets 70 are arranged in a circular shape and spaced apart from one another in a plan view. Hereinafter, a circular imaginary line connecting the centers of the gas outlets 70 will be referred to as a "imaginary gas outlet circle."

[0164] Gas outlets 70(1) and 70(2) correspond to a pair of gas outlets 70, 70 that face each other in the diametric direction on the imaginary gas outlet circle. Here, the partially active gas ejected from gas outlet 70(1) is referred to as partially active gas g2(1), and the partially active gas ejected from gas outlet 70(2) is referred to as partially active gas g2(2).

[0165] Gas nozzle 70(1) has a constant nozzle inclination A71 that exceeds "0" and is less than 90° with respect to the horizontal direction (X direction), which is the reference direction. The nozzle inclination A71 is set in the direction in which the partially activated gas g2(1) ejected from gas nozzle 70(1) heads toward collision point P80.

[0166] Like gas nozzle 70(1), gas nozzle 70(2) has a constant nozzle inclination A72 that exceeds "0" and is less than 90° with respect to the horizontal direction. The nozzle inclination A72 is set in the direction in which the partially activated gas g2(2) ejected from gas nozzle 70(2) heads toward collision point P80.

[0167] The nozzle inclinations A71 and A72 are set to the same angle, for example, 45°.

[0168] The remaining film thickness T6 of the ground conductor 60 below the active gas buffer space 68, where the gas jets 70(1) and 70(2) are provided, is set to, for example, 3 mm. The formation interval R70 between the center positions of the gas jets 70(1) and 70(2) at the top is set to, for example, 16.4 mm. The formation interval R70 corresponds to the length of the diameter Φ of the imaginary gas jet circle.

[0169] On the other hand, the total depth DTA of the housing opening 41 in the Z direction is set to, for example, 18.5 mm, and the upper depth DT1 of the upper region 41a of the housing opening 41 in the Z direction is set to, for example, 5.0 mm.

[0170] Further, the side surface of the lower tapered region 41t, which is the tapered region of the housing opening 41, expands in a conical shape along the taper inclination A41. The taper inclination A41 is set to, for example, 45°.

[0171] In the ground conductor 60 having the above-described structure, when the partially activated gases g2(1) and g2(2) are ejected from the gas ejection ports 70(1) and 70(2), the partially activated gases g2(1) and g2(2) collide at a collision point P80. As shown in Fig. 37, the depth of the collision point P80 from the surface of the ground conductor 60 is the collision depth DTX.

[0172] Even if the total number of gas nozzles 70 is "3" or more, by arranging each gas nozzle 70 along a virtual gas nozzle circle with the formation interval R70 as the diameter and setting the nozzle inclination A70 to the same value in the direction toward the collision point P80, three or more partially activated gases can collide at the same collision point P80. Note that the nozzle inclination A70 is a general term for the nozzle inclinations A71, A72, etc.

[0173] In the above-mentioned example of setting the nozzle inclinations A71 and A72, the formation interval R70, the remaining film thickness T6, and the upper depth DT1, the collision depth DTX of the collision point P80 is 5.2 mm.

[0174] Considering the diameter of the gas nozzles 70(1) and 70(2), the partially activated gases are considered to collide in a collision region 80 that spreads around the collision point P80. Therefore, in the above example, the collision region 80 is formed from the upper region of the lower tapered region 41t to the lower region of the upper region 41a. That is, the collision region 80 exists in the lower tapered region 41t or in the upper region 41a above the lower tapered region 41t.

[0175] (Active gas G2 ejection form) Figures 38 to 41 are explanatory diagrams each showing a typical ejection form of active gas G2 in housing opening 41 of electrode unit 55 of embodiment 2. Each of Figures 38 to 41 corresponds to a part of cross section DD in Figure 34. Each of Figures 38 to 41 shows an XYZ orthogonal coordinate system.

[0176] Hereinafter, the direction of partially activated gas g2(1) ejected from gas outlet 70(1) is defined as partially activated gas ejection direction V7(1), and the direction of partially activated gas g2(2) ejected from gas outlet 70(2) is defined as partially activated gas ejection direction V7(2).

[0177] As shown in FIG. 38, the partially activated gas g2(1) is ejected along the partially activated gas ejection direction V7(1) so as to reach the collision point P80, and the partially activated gas g2(2) is ejected along the partially activated gas ejection direction V7(2) so as to reach the collision point P80.

[0178] That is, the flow direction of the partially activated gas g2(1) is only in the partially activated gas ejection direction V7(1), and the flow direction of the partially activated gas g2(2) is only in the partially activated gas ejection direction V7(2).

[0179] Thereafter, as shown in FIG. 39, the partially activated gas g2(1) and the partially activated gas g2(2) collide in a collision region 80 including a collision point P80, and the partially activated gases g2(1) and g2(2) diffuse in a plurality of diffusion directions DK.

[0180] That is, the flow direction of the partially activated gas g2(1) diverges from one partially activated gas ejection direction V7(1) into multiple diffusion directions DK, and the flow direction of the partially activated gas g2(2) diverges from one partially activated gas ejection direction V7(2) into multiple diffusion directions DK. In this way, in the collision region 80, the flow directions of the multiple partially activated gases diverge from one direction into multiple diffusion directions.

[0181] As shown in FIG. 40, the intermediate supply direction DR1 of the plurality of partially activated gases is influenced by the side surface of the lower tapered region 41t and is restricted to approach the taper gradient A41.

[0182] In this way, since the collision region 80 exists in the lower tapered region 41t and in the upper region 41a above the lower tapered region 41t, the multiple diffused partially activated gases flow in a direction along the tapered shape of the side surface of the lower tapered region 41t as they head downward.

[0183] Thereafter, as shown in FIG. 41, the plurality of partially activated gases are supplied to a downstream processing space located below along a final supply direction DR2 expanding along the taper gradient A41.

[0184] (effect) The activated gas generator 75 of the second embodiment having such a structure has the same effects as those of the first embodiment, and further has the following effects unique to the second embodiment.

[0185] The active gas generator 75 of the second embodiment accommodates the electrode unit 55 having the above-mentioned ground conductor 60 in the housing internal space 1S of the housing 1. The multiple gas outlets 70 provided in the ground conductor 60 of the electrode unit 55 of the second embodiment are provided in such a manner that they approach each other downwardly so that the multiple partially activated gases collide in a collision region 80 including a collision point P80, and the collision region 80 is present within the downward tapered region 41t or above the downward tapered region 41t.

[0186] Therefore, as shown in FIG. 39, when a plurality of partially activated gases collide with each other in the collision region 80, the flow direction of each of the plurality of partially activated gases is dispersed from one direction into a plurality of diffusion directions DK.

[0187] The collision region 80 exists within the lower tapered region 41t or above the lower tapered region 41t. Therefore, as each of the diffused partially activated gases flows downward, they flow in a direction along the tapered shape of the side surface of the lower tapered region 41t, that is, in the intermediate supply direction DR1 shown in FIG.

[0188] Then, the activated gas G2 containing multiple partially activated gases flows from the lower taper region 41t toward the processing space below while diffusing in a direction along the tapered shape of the side surface of the lower taper region 41t, i.e., along the final supply direction DR2 shown in FIG.

[0189] In this manner, the plurality of partially activated gases ejected from the plurality of gas ejection ports 70 flow within the housing opening 41 as shown in FIGS.

[0190] As a result, even if the spatial pressure p0 in the active gas buffer space 68 and the spatial pressure p1 in the downstream processing space are significantly different, the active gas generation apparatus 75 of embodiment 1 can supply a uniform active gas G2 to the downstream processing space.

[0191] The multiple gas jets 70 provided in the electrode unit 55 of embodiment 2 are each formed with an inclination in a direction approaching the collision region 80 including the collision point P80 as they extend downward, and the jet inclination A70, which is the formation inclination of each of the multiple gas jets 70 with respect to the horizontal direction, which is the reference direction, is set to the same value.

[0192] Therefore, even if the number of gas outlets 70 is three or more, a plurality of partially activated gases ejected from the plurality of gas outlets 70 can collide within the same collision region 80 .

[0193] As a result, the active gas generation apparatus 75 of embodiment 2 can supply a more uniform active gas G2 toward the downstream processing space by dispersing multiple partially activated gases in multiple diffusion directions in one collision area 80.

[0194] Furthermore, the activated gas generator 75 of the second embodiment employs a structure in which a plurality of electrode units 55 are provided as electrode units 51 to 53, as shown in FIG.

[0195] Therefore, the active gas generation apparatus 75 of embodiment 2 can uniformly supply active gas G2 to the downstream processing space having a relatively wide area by ejecting multiple partial activated gases from each of multiple electrode units 51 to 53, each of which has a structure similar to that of the electrode unit 55.

[0196] Although the present disclosure has been described in detail, the above description is illustrative in all respects and does not limit the present disclosure. It is understood that countless variations not illustrated can be assumed without departing from the scope of the present disclosure.

[0197] For example, in the second embodiment, a plurality of partially activated gases are caused to collide in one collision region 80, but a plurality of partially activated gases may be selectively caused to collide in two or more collision regions.

[0198] In other words, within the scope of the present disclosure, it is possible to freely combine the various embodiments, and to modify or omit the various embodiments as appropriate. [Explanation of symbols]

[0199] 1 Case 2 High voltage side dielectric film 3. Ground side dielectric film 4 Discharge space 5 Power feeder 6,60 Ground conductor 7 Conductive Film 8 Cover dielectric film 9 Shielding dielectric film 10 Dielectric film support member 11 Dielectric film suppression member 12 Pressing member 13 Buffer conductor 21 Gas flow path 22 Cooling path 41 Housing opening 41a Upper area 41t Lower taper area 50,51~53,55 Electrode unit 61 Raw material gas buffer space 62 Slit Space 63 Side space 68 Buffer space for active gas 69,70 Gas outlet 71,75 Active gas generator 80 Collision area E1 High voltage side electrode component E2 Ground side electrode component

Claims

1. An active gas generating device for activating a raw material gas supplied to a discharge space to generate an active gas, comprising: An electrode unit; a housing having an electrical conductivity and housing the electrode unit in a space within the housing, The housing has a housing bottom including a flat surface and a conductor accommodating space recessed in a depth direction from the flat surface, The electrode unit comprises: A first electrode configuration; and a second electrode configuration provided below the first electrode configuration; a reference potential conductor provided below the second electrode configuration portion and accommodated in the conductor accommodating space; the first electrode configuration portion includes a first electrode dielectric film and a first electrode conductive film formed on an upper surface of the first electrode dielectric film; the second electrode configuration portion includes a second electrode dielectric film and a second electrode conductive film formed on a lower surface of the second electrode dielectric film, the reference potential conductor has an active gas buffer space at an upper portion, and the second electrode component is disposed to close the active gas buffer space; the second electrode dielectric film has a dielectric through hole penetrating the second electrode dielectric film in a region overlapping with the active gas buffer space in a plan view, the second electrode conductive film has a conductive film opening in a region overlapping with the active gas buffer space in a plan view, the conductive film opening overlaps with the dielectric through hole in a plan view, a space where the first electrode dielectric film and the second electrode dielectric film face each other is defined as a main dielectric space; the discharge space includes a main discharge space which is a region in the main dielectric space where the first and second electrode conductive films overlap in a plan view, an AC voltage is applied to the first electrode conductive film, and the second electrode conductive film is set to a reference potential via the housing and the reference potential conductor; The active gas generator includes: a plurality of gas outlets each extending from a bottom surface of the active gas buffer space through the reference potential conductor, the plurality of gas outlets not overlapping the dielectric through hole in a plan view; the discharge space includes, in addition to the main discharge space, an auxiliary discharge space including the dielectric through hole and a part of the active gas buffer space; The active gas output from the plurality of gas outlets is defined as a plurality of partially active gases, The housing bottom of the housing has a housing opening in a region overlapping with the active gas buffer space in a plan view, and the plurality of partially activated gases are guided downward through the housing opening, the housing opening includes a tapered region having an opening area that becomes wider downward, The plurality of gas outlets are provided in such a manner that they approach each other downwardly so that the plurality of partially activated gases collide with each other in a collision region, and the collision region is located within the tapered region or above the tapered region. Activated gas generator.

2. The active gas generating apparatus according to claim 1, each of the plurality of gas jets is formed with an inclination in a direction approaching the collision region as it extends downward, and each of the plurality of gas jets has an inclination with respect to a reference direction set to the same value; Activated gas generator.

3. The active gas generating apparatus according to claim 1, The electrode unit includes a plurality of electrode units. The housing accommodates the plurality of electrode units in an internal space of the housing. Activated gas generator.

4. The active gas generating apparatus according to any one of claims 1 to 3, a dielectric film support member provided on the flat surface of the housing and having a support surface for supporting the first electrode dielectric film from below; a dielectric film suppressing member for suppressing the first electrode dielectric film from above, the dielectric film suppressing member not overlapping the first electrode conductive film in a plan view, a lower surface of the dielectric film suppressing member has a dielectric contact region in contact with the upper surface of the first electrode dielectric film and a dielectric non-contact region not in contact with the upper surface of the first electrode dielectric film, the dielectric contact region overlaps with a peripheral region of the first electrode dielectric film and the support surface of the dielectric film supporting member in a planar view, the dielectric non-contact region overlaps with an intermediate region of the first electrode dielectric film in a planar view, and the intermediate region is a region adjacent to the peripheral region on the first electrode conductive film side, the dielectric film suppressing member is conductive and set to the reference potential; the first electrode dielectric film is suppressed from above in the dielectric contact region by the dielectric film suppressing member; Activated gas generator.

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