Semiconductor device and its manufacturing method

Abstract

Conventional GaN-based HEMTs, in which an AlN spacer layer is provided below the source and drain electrodes to reduce access resistance while an AlN spacer layer is not located directly below the gate electrode to reduce gate leakage current, were difficult to manufacture stably. A manufacturing method for a semiconductor device having a GaN-based HEMT according to the present disclosure includes the steps of stacking a metal film 21 above an epitaxial wafer 10, opening an opening 31 in the metal film 21 corresponding to a position where a gate electrode 18 is to be formed, and irradiating a laser 90 into the opening 31 to anneal the spacer layer 13 and the channel layer 12.

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a manufacturing method thereof, and in particular to a GaN-based HEMT having an AlN layer. [Background technology]

[0002] GaN (gallium nitride) based HEMTs (High Electron Mobility Transistors) with an AlN (aluminum nitride) spacer are widely known. Patent Document 1 discloses a GaN based HEMT in which an AlN spacer layer is provided in the portion between the source and drain electrodes other than directly below the gate electrode to reduce access resistance, while no AlN spacer layer is present directly below the gate electrode to reduce gate leakage current. In Patent Document 1, the AlN spacer layer in the region directly below the gate electrode is removed by etching, and then a barrier layer is regrown on the channel layer and the AlN spacer layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5744346 Summary of the Invention [Problem to be solved by the invention]

[0004] Generally, the thickness of the spacer layer in a GaN-based HEMT is very thin, for example, 1 nm in Patent Document 1. In Patent Document 1, this thin spacer layer is removed by etching only directly below the gate. In the semiconductor manufacturing process, the amount of etching is controlled by the etching time, but whether dry etching or wet etching is used, there is inevitably variation in the etching rate in practice. For this reason, when removing a thin layer by etching, it is common to secure manufacturing margins and stabilize production by stopping the etching by providing an etching stop layer with an etching rate lower than that of the layer to be removed.

[0005] However, in Patent Document 1, the GaN channel layer is located below the AlN spacer layer. GaN has a significantly higher etching rate than AlN. Therefore, if etching continues after the etching of the AlN spacer layer is completed, the GaN channel layer is easily over-etched. For this reason, it is extremely difficult in practice to stably remove only the AlN channel layer by etching, taking into account factors such as uniformity within the wafer surface. Furthermore, providing an etching stop layer between the AlN spacer layer and the GaN channel layer is difficult because it would cause the generation of two-dimensional electron gas, which would affect the operation of the GaN-based HEMT itself. For this reason, it has been extremely difficult to stably manufacture the GaN-based HEMT disclosed in Patent Document 1.

[0006] The present disclosure has been made in consideration of the above problems, and an object of the present disclosure is to provide a method for manufacturing a GaN-based HEMT in which the access resistance is reduced and the gate leakage current is reduced while avoiding the difficulty of removing the AlN spacer layer by etching. Another object of the present disclosure is to provide a GaN-based HEMT in which the access resistance is reduced and the gate leakage current is reduced. [Means for solving the problem]

[0007] The method for manufacturing a semiconductor device according to the present disclosure is a method for manufacturing a semiconductor device having a GaN-based HEMT formed therein, and includes the steps of forming an epitaxial wafer having a channel layer and a spacer layer, forming a metal film above the epitaxial wafer, opening an opening in the metal film at a position where a gate electrode will be formed, irradiating the opening with a laser to anneal the spacer layer and the channel layer, and forming a gate electrode in the opening.

[0008] The semiconductor device according to the present disclosure is a semiconductor device including a GaN-based HEMT having an epitaxial wafer in which a channel layer is formed above a substrate and a spacer layer is formed above the channel layer, and a gate electrode formed above the epitaxial wafer, in which the channel layer below the gate electrode contains Al diffused from the spacer layer, and the channel layer other than the part below the gate electrode does not contain Al diffused from the spacer layer. [Effects of the Invention]

[0009] According to the present disclosure, a method for manufacturing a GaN-based HEMT with reduced access resistance and reduced gate leakage current is provided while avoiding the difficulty of removing an AlN spacer layer by etching. Also, according to the present disclosure, a GaN-based HEMT with reduced access resistance and reduced gate leakage current is provided. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a cross-sectional view showing a semiconductor device 100 according to a first embodiment of the present invention. [Figure 2] 2 is a diagram illustrating a method for manufacturing the semiconductor device 100 according to the first embodiment of the present invention. [Figure 3] 2 is a diagram illustrating a method for manufacturing the semiconductor device 100 according to the first embodiment of the present invention. [Figure 4] 1 is a diagram showing a method for manufacturing a semiconductor device 100 according to a first embodiment of the present invention. [Figure 5] 1 is a diagram showing a method for manufacturing a semiconductor device 100 according to a first embodiment of the present invention. [Figure 6] 1 is a cross-sectional TEM image of the epitaxial wafer 10. [Figure 7] FIG. 10 is a diagram showing the results of elemental analysis of an epitaxial wafer before annealing. [Figure 8] FIG. 10 is a diagram showing the results of elemental analysis of the epitaxial wafer after annealing. DETAILED DESCRIPTION OF THE INVENTION

[0011] Embodiment 1 A power amplifier according to an embodiment of the present disclosure will be described with reference to the drawings. The same or corresponding components are designated by the same reference numerals, and repeated description may be omitted.

[0012] FIG. 1 is a cross-sectional view showing a semiconductor device 100 according to a first embodiment of the present invention. The semiconductor device 100 is a GaN-based HEMT formed on an epitaxial wafer 10. The epitaxial wafer 10 includes a substrate 11, a channel layer 12, a spacer layer 13, a barrier layer 14, and a cap layer 15. The substrate 11 is made of semi-insulating silicon carbide (SiC). The thickness of the substrate 11 is, for example, 100 μm, and the upper surface is, for example, the (0001) plane. The material of the substrate 11 may be monolithic sapphire or the like.

[0013] A channel layer 12 made of GaN is formed above the surface of the substrate 11. A spacer layer 13 is formed above the channel layer 12 in contact with the channel layer 12. The spacer layer 13 is made of AlN and has a very thin thickness, preferably 10 nm or less, and more preferably 0.5 nm to 1.5 nm.

[0014] Above the spacer layer 13, a barrier layer 14 made of AlGaN (aluminum gallium nitride) is formed. A cap layer 15 made of GaN is formed above the barrier layer 14 . A source electrode 16, a drain electrode 17, and a gate electrode 18 are provided in contact with the cap layer 15. The remaining portion of the cap layer 15 is covered with a protective film 19 made mainly of SiN (silicon nitride).

[0015] The channel layer 12 may be formed after a nucleation layer or a buffer layer is formed above the substrate 11. The nucleation layer may be a thin layer made of AlN, and the buffer layer may be a layer made of GaN or AlGaN.

[0016] It is well known that in GaN-based HEMTs, a two-dimensional electron gas 20 called 2DEG is generated at the interface between the GaN channel layer 12 and the AlGaN spacer layer 13. In conventional structures, the 2DEG is uniformly distributed within the transistor. On the other hand, as will be described later, in the semiconductor device 100, Al in the spacer layer 13 below the gate electrode 18 is diffused into the channel layer 12 and the barrier layer 14 by laser annealing. As a result, the concentration of the two-dimensional electron gas 20 below the gate electrode 18 is reduced compared to other parts, and the resistance below the gate electrode 18 is increased.

[0017] 2 to 5 are diagrams showing a method for manufacturing the semiconductor device 100 according to the first embodiment. The method for manufacturing the semiconductor device 100 will be described with reference to FIGS. First, a channel layer 12 is formed above the surface side of a substrate 11, a spacer layer 13 is formed above the channel layer 12, a barrier layer 14 is formed above the spacer layer 13, and a cap layer 15 is formed above the barrier layer 14 by epitaxial growth, thereby forming an epitaxial wafer 10.

[0018] 2(a), a source electrode 16 and a drain electrode 17 are formed on the surface of the epitaxial wafer 10 by vapor deposition, sputtering, plating, or the like. Thereafter, a protective film 19 is formed to cover the epitaxial wafer 10. The protective film 19 is made of a material such as a silicon nitride film, a silicon oxide film, an aluminum nitride film, or an aluminum oxide film, and is formed by, for example, MOCVD or ALD (Atomic Layer Deposition).

[0019] 2(b), a metal film 21 is formed to cover the protective film 19. The metal film 21 is a thin metal film for reflecting a laser 90, which will be described later. In the first embodiment, the material of the metal film 21 is Ni, but this is not limited to Ni, and metals such as Au may also be used. Next, as shown in FIG. 2( c ), a resist 30 is applied so as to cover the metal film 21 . Next, as shown in FIG. 3( d ), the resist 30 is removed from the portion where the gate electrode 18 is to be formed, using a so-called photolithography process that is common in semiconductor manufacturing, and an opening 42 is formed in the resist 30 .

[0020] 3(e), an etching process is then used to open the metal film 21 exposed from the opening 42, thereby forming an opening 31 in the metal film 21. The protective film 19 is then removed to expose the epitaxial wafer 10. The portion of the epitaxial wafer 10 exposed from the opening 31 is designated as an exposed portion 32. The opening 31 and exposed portion 32 are formed to be as fine as the gate electrode 18 using a so-called photolithography process. Next, as shown in FIG. 3(f), the resist 30 is removed using a wet etching process or a dry etching process.

[0021] 4(g), a laser 90 is irradiated into the opening 31 to heat the exposed portion 32. As a result, the spacer layer 13 and the channel layer 12 below the exposed portion 32 are annealed. The wavelength of the laser 90 may be any wavelength that can be absorbed by GaN, AlGaN, AlN, etc., and is generally shorter than 400 nm. Next, as shown in FIG. 4(h), the metal film 21 is removed using a wet etching process or a dry etching process.

[0022] 4(i), after applying resist 33, a photolithography process is used to form openings 44 in the resist 33. The openings 44 are openings for forming the gate electrodes 18, and are formed around the openings 31 and exposed portions 32 while exposing the openings 31 and exposed portions 32. 5(j), the gate electrode 18 is formed in the opening 31. The gate electrode 18 is formed in contact with the exposed portion 32. Next, as shown in FIG. 5(k), the resist 33 is removed.

[0023] Next, the effect of annealing will be explained. Figure 6 shows cross-sectional TEM images of the vicinity of the interface between the channel layer 12 and spacer layer 13 of epitaxial wafer 10 before and after annealing, showing the state of Al diffusion in AlN due to annealing. GaN, AlN, and AlGaN in Figure 6 correspond to channel layer 12, spacer layer 13, and barrier layer 14, respectively.

[0024] The upper left (a) and lower left (c) of Figure 6 are cross-sectional TEM images of the epitaxial wafer 10 before annealing, and the upper right (b) and lower right (d) of Figure 6 are cross-sectional TEM images of the epitaxial wafer 10 after annealing at 1140°C for 5 minutes. Figure 6(c) is an enlarged view of the vicinity of the GaN / AlN interface in Figure 6(a), and Figure 6(d) is an enlarged view of the vicinity of the GaN / AlN interface in Figure 6(b). 6(a) with 6(b), or 6(c) with 6(d), it can be seen that the clarity of the interfaces between the spacer layer 13 and the barrier layer 14, and between the channel layer 12 and the spacer layer 13, is lost by annealing. In particular, a comparison of FIGS. 6(c) and 6(d) shows a significant change at the AlN / GaN interface.

[0025] Figure 7 shows the results of elemental analysis of the epitaxial wafer 10 before annealing, and Figure 8 shows the results of elemental analysis of the epitaxial wafer 10 after annealing. In both Figures 7 and 8, the horizontal axis indicates the depth from the wafer surface, with the left side being the barrier layer 14 side and the right side being the channel layer 12 side. Note that the horizontal axes in Figures 7 and 8 do not indicate absolute distances from the wafer surface, so the positions cannot be directly compared. The vertical axis indicates the intensity of the detected elements (Ga, N, Al). Note that only Al is shown with its intensity multiplied by 5.

[0026] Comparing the Al intensity distributions in Figures 7 and 8, the Al intensity in Figure 7 drops sharply over a width of 1.6 nm from the point at a distance of 9.2 nm to the point at a distance of 10.8 nm. This means that the Al concentration distribution switches sharply. On the other hand, in Figure 8, the Al intensity drops over a width of 3 nm from the point at a distance of 7.2 nm to the point at a distance of 10.2 nm. This means that the steepness has been lost compared to before annealing, and it can be seen that after annealing, Al in the spacer layer 13 has diffused toward the channel layer 12. Although some of the Al in the spacer layer 13 also diffuses into the barrier layer 14, the Al concentration in the channel layer 12 is overwhelmingly lower than the Al concentration in the barrier layer 14, so it is thought that the amount of Al diffusing from the spacer layer 13 to the channel layer 12 is far greater than the amount of Al diffusing from the spacer layer 13 to the barrier layer 14.

[0027] Next, the functions and effects of the present disclosure will be described. In the semiconductor device 100, the metal film 21 is left in a state other than the opening 31, and the opening 31 where the gate electrode 18 is to be formed is irradiated with a laser 90. By selecting a material for the metal film 21 that easily reflects the laser 90, it is possible to effectively heat only the exposed portion 32 of the surface of the epitaxial wafer 10.

[0028] As a result, in the semiconductor device 100, the spacer layer 13 and the channel layer 12 are annealed below the opening 31, Al of the spacer layer 13 is diffused into the channel layer 12, and the concentration of the two-dimensional electron gas 20 is reduced. On the other hand, the spacer layer 13 and the channel layer 12 are not annealed except for the area below the opening 31, including the areas below the source and drain electrodes. Therefore, Al in the spacer layer 13 does not diffuse into the channel layer 12, and the concentration of the two-dimensional electron gas 20 does not decrease. It should be noted that the lower part of the opening 31 mentioned here includes not only the area directly below the opening 31 but also the area directly below the opening 31 and its vicinity which is annealed by irradiating the opening 31 with the laser 90 .

[0029] In other words, when the laser 90 is irradiated onto the opening 31 in which the gate electrode 18 is to be formed, Al of the spacer layer 13 diffuses into the channel layer 12 below the opening 31, and as a result, the concentration of the two-dimensional electron gas 20 below the opening 31 becomes lower than the concentration of the two-dimensional electron gas 20 other than below the opening 31.

[0030] As a result, the semiconductor device 100 has the advantage that the access resistance is reduced by providing an AlN spacer layer in the portion other than the lower portion of the gate electrode 18, while the resistance is increased in the lower portion of the gate electrode 18, thereby achieving a high breakdown voltage. Furthermore, the manufacturing flow of the semiconductor device 100 can avoid the difficulty of removing the thin spacer layer 13 made of AlN by etching.

[0031] 3(e), the protective film 19 is removed to expose the epitaxial wafer 10. However, for example, the protective film 19 may be left thin enough not to affect the annealing of the spacer layer 13 and the channel layer 12 by laser irradiation, and may be removed just before forming the gate electrode 18 described in FIG. 5(j). By not exposing the surface of the epitaxial wafer 10 to the external atmosphere in this way, it is possible to reduce damage to the exposed portion 32 during the process.

[0032] The present disclosure is not limited to the above-described embodiments and includes various modifications. For example, the above-described embodiments have been described in detail to clearly explain the present disclosure, and the present disclosure is not necessarily limited to those including all of the described configurations. Furthermore, it is possible to add, delete, or replace part of the configuration of the embodiments with other configurations. [Explanation of symbols]

[0033] 10 epitaxial wafer, 11 substrate, 12 channel layer, 13 spacer layer, 14 barrier layer, 15 cap layer, 16 source electrode, 17 drain electrode, 18 gate electrode, 19 protective film, 20 two-dimensional electron gas, 21 metal film, 31 opening, 32 exposed portion, 90 laser, 100 semiconductor device

Claims

1. A method for manufacturing a semiconductor device in which a GaN-based HEMT is formed, comprising: forming an epitaxial wafer having a channel layer and a spacer layer provided in contact with the channel layer; forming a metal film above the epitaxial wafer; forming an opening in the metal film; annealing the spacer layer and the channel layer by irradiating the opening with a laser; forming the gate electrode in the opening; A method for manufacturing a semiconductor device comprising the above steps.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the spacer layer is a spacer layer made of AlN, and Al of the spacer layer is diffused into the channel layer by the annealing step.

3. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the metal film is Ni or Au.

4. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the wavelength of the laser is shorter than 400 nm.

5. A semiconductor device comprising an epitaxial wafer having a channel layer formed above a substrate and a spacer layer containing Al formed above the channel layer, and a gate electrode formed above the epitaxial wafer, wherein the channel layer below the gate electrode contains the Al diffused from the spacer layer, and the channel layer other than below the gate electrode does not contain the Al diffused from the spacer layer.

6. The semiconductor device according to claim 5, wherein the spacer layer is a spacer layer made of AlN.

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