IC pacakage with very thin vapor chamber

TW202628988APending Publication Date: 2026-07-01陈威霖 +1
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Patent Information

Application Number
TW115106915
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-05
Filing Date
2024-09-04
Publication Date
2026-07-01
Patent Text Reader

Abstract

An IC package comprising a substrate with a first vaper chamber; a semiconductor die with a top surface, the semiconductor die stacked over the substrate; wherein the first vapor chamber disposed under the semiconductor die, the first vapor chamber comprises a proximal portion and a distal portion, the proximal portion of the first vapor chamber is thermally coupled to a bottom surface of the semiconductor die; and an encapsulating case encapsulating the semiconductor die and the first vapor chamber, wherein the proximal portion of the first vapor chamber is within the encapsulating case, and the distal portion of the first vapor chamber outside the encapsulating case.
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