IC pacakage with very thin vapor chamber
TW202628988APending Publication Date: 2026-07-01陈威霖 +1
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Patent Information
- Application Number
- TW115106915
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-09-05
- Filing Date
- 2024-09-04
- Publication Date
- 2026-07-01
Abstract
An IC package comprising a substrate with a first vaper chamber; a semiconductor die with a top surface, the semiconductor die stacked over the substrate; wherein the first vapor chamber disposed under the semiconductor die, the first vapor chamber comprises a proximal portion and a distal portion, the proximal portion of the first vapor chamber is thermally coupled to a bottom surface of the semiconductor die; and an encapsulating case encapsulating the semiconductor die and the first vapor chamber, wherein the proximal portion of the first vapor chamber is within the encapsulating case, and the distal portion of the first vapor chamber outside the encapsulating case.
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