Electrostatic discharge in gallium nitride devices
US20250015071A1Pending Publication Date: 2025-01-09TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Application Number
- US18/348741
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- Filing Date
- 2023-07-07
- Publication Date
- 2025-01-09
Smart Images
Figure US20250015071A1-D00000_ABST
Abstract
Providing a resistor between a gate of a target device (e.g., a gallium nitride (GaN) high-electron-mobility transistor device) and a clamp circuit improves electrostatic discharge (ESD) protection between an input / output (IO) and the target device. For example, the resistor may result in ESD protection between the IO and a source of the target device and between the IO and a drain of the target device may be at least 2 kilovolts under the human body model. Because ESD protection is improved, chances of burn out in the target device are reduced. Additionally, larger currents may be applied in the clamp circuit without risk of ESD.
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Citation Information
Patent Citations
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