LED device, light-emitting substrate, backlight module, display panel, and display apparatus

Abstract

Some embodiments of the present application relate to the technical field of display, and provide an LED device, a light-emitting substrate, a backlight module, a display panel, and a display apparatus, which can increase the utilization rate of an LED device of a light-emitting substrate. The light-emitting substrate comprises a nanopillar LED device, a first electrode, a second electrode, and a third electrode, and the nanopillar LED device comprises a first p-type semiconductor layer, a first multi-quantum well layer, and an n-type semiconductor layer arranged along the length extension direction. The third electrode is located between the first electrode and the second electrode, the n-type semiconductor layer is connected to the third electrode, and when the length extension direction of the nanopillar LED device is in a first direction, the first p-type semiconductor layer is connected to the first electrode. When the length extension direction of the nanopillar LED device is in a second direction, the first p-type semiconductor layer is connected to the second electrode. The light-emitting substrate is a nanopillar LED light-emitting substrate, can be applied to a backlight module, and can also be applied to a display panel.

Description

LED device, light-emitting substrate, backlight module, display panel and display device Technical Field

[0001] The present application relates to the field of display technology, and in particular to an LED device, a light-emitting substrate, a backlight module, a display panel, and a display apparatus. Background Art

[0002] Nanocolumn LED (English full name: light-emitting diode, Chinese full name: light-emitting diode) luminescence technology is a new luminescence technology based on nanocolumn LED.

[0003] Currently, in the process of preparing a nanopillar LED light-emitting substrate, a first alignment electrode and a second alignment electrode are first formed on the substrate, generating an alignment electric field between the two. Next, a first dielectric layer is formed covering the first and second alignment electrodes. During the alignment process, multiple nanopillar LED devices are placed on the first dielectric layer. Driven by the alignment electric field, the multiple nanopillar LED devices rotate so that the length extension direction of the nanopillar LED devices points toward the first and second alignment electrodes. Finally, the first and second electrodes are formed on the side of the nanopillar LED device away from the substrate, and the first and second electrodes are arranged along the length extension direction of the nanopillar LED device.

[0004] Due to the random rotation of the nanopillar LED devices, the probability of the p-type semiconductor layer of the nanopillar LED devices being close to the first electrode and the probability of being close to the second electrode are both 50%. Therefore, after the alignment process, among the multiple nanopillar LED devices, half of the nanopillar LED devices have their p-type semiconductor layers close to and connected to the first electrode, and half of the nanopillar LED devices have their p-type semiconductor layers close to and connected to the second electrode.

[0005] One of the first electrode and the second electrode is a positive electrode, and the other is a negative electrode. The nanopillar LED device can only emit light normally when the p-type semiconductor layer of the nanopillar LED device is connected to the positive electrode and the n-type semiconductor layer is connected to the negative electrode. Conversely, when the p-type semiconductor layer of the nanopillar LED device is connected to the negative electrode and the n-type semiconductor layer is connected to the positive electrode, the nanopillar LED device does not emit light. Therefore, during a single light-emitting drive cycle, only half of the nanopillar LED devices can emit light normally, while the other half do not. This results in an actual utilization rate of only 50% for the multiple nanopillar LED devices, resulting in a low utilization rate for the nanopillar LED devices.

[0006] Summary of the Invention

[0007] Some embodiments of the present application provide an LED device, a light-emitting substrate, a backlight module, a display panel and a display device, aiming to improve the utilization rate of nanocolumn LED devices in the light-emitting substrate, so as to improve the utilization rate of the LED devices in the light-emitting substrate.

[0008] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0009] In a first aspect, a light-emitting substrate is provided. The light-emitting substrate is a nanocolumn LED light-emitting substrate, which can be used to prepare a backlight module and also can be used to prepare a display panel.

[0010] The light-emitting substrate includes a substrate, a nanopillar LED device, a first electrode, a second electrode, and a third electrode. The nanopillar LED device is disposed on the substrate, and its length extends parallel to the substrate. The nanopillar LED device includes a first p-type semiconductor layer, a first multi-quantum well layer, and an n-type semiconductor layer arranged along the length. The third electrode is located between the first electrode and the second electrode, and the n-type semiconductor layer is connected to the third electrode. When the length of the nanopillar LED device extends along the first direction, the first p-type semiconductor layer is connected to the first electrode. When the length of the nanopillar LED device extends along the second direction, the first p-type semiconductor layer is connected to the second electrode. The first direction and the second direction are opposite, and the first and second directions are parallel to the arrangement direction of the first, second, and third electrodes.

[0011] In the light-emitting substrate provided in the above-described embodiments of the present application, the first electrode, the second electrode, and the third electrode are symmetrically designed, the first electrode and the second electrode are positive electrodes, the third electrode is a negative electrode, and the third electrode is located between the first electrode and the second electrode. During the orientation process for preparing the light-emitting substrate, the plurality of nanopillar LED devices are rotated under the drive of the orientation electric field until the length extension direction of the plurality of nanopillar LED devices is oriented in the first direction or the second direction.

[0012] When the length of the nanopillar LED device extends in a first direction (the first p-type semiconductor layer turns to the left), the first p-type semiconductor layer can be connected to the first electrode on the left. When the length of the nanopillar LED device extends in a second direction (the first p-type semiconductor layer turns to the right), the first p-type semiconductor layer can be connected to the second electrode on the right. In other words, regardless of whether the first p-type semiconductor layer of the nanopillar LED device turns to the left or right, there is a positive electrode (the first electrode or the second electrode) corresponding to and connected to it.

[0013] Furthermore, along the length of the nanopillar LED device, the n-type semiconductor layer is located near its center region. Therefore, regardless of whether the first p-type semiconductor layer of the nanopillar LED device is located on the left or right side, the n-type semiconductor layer can be connected to the third electrode. This ensures that the first p-type semiconductor layer of the nanopillar LED device can be accurately connected to the first or second electrode, and the n-type semiconductor layer can be accurately connected to the third electrode. This ensures that within a single light-emitting drive cycle, all nanopillar LED devices can emit light simultaneously, achieving 100% utilization of the nanopillar LED devices.

[0014] In addition, the symmetrical design of the three electrodes eliminates the need to add a corresponding driving circuit to achieve the function of changing the signal polarity, which can simplify the structural design of the driving circuit in the light-emitting substrate and reduce the design difficulty of the driving circuit.

[0015] In some embodiments, the nanopillar LED device further comprises an insulating layer located on a side of the n-type semiconductor layer away from the first multi-quantum well layer. When the nanopillar LED device extends in a first direction, the insulating layer is connected to the second electrode; when the nanopillar LED device extends in a second direction, the insulating layer is connected to the first electrode.

[0016] In the above-described embodiments of the present application, an insulating layer is added to the side of the n-type semiconductor layer away from the first multi-quantum well layer. When the first p-type semiconductor layer of the nanopillar LED device is connected to the first electrode, the insulating layer can be connected to the second electrode. When the first p-type semiconductor layer of the nanopillar LED device is connected to the second electrode, the insulating layer can be connected to the first electrode. By utilizing the high resistance of the insulating layer, leakage current from the electrode (the first electrode or the second electrode) connected to the insulating layer can be reduced, thereby facilitating reduced power consumption of the light-emitting substrate.

[0017] In some embodiments, the material of the insulating layer includes intrinsic gallium nitride, which has high resistance and good insulation performance.

[0018] In some embodiments, the nano-pillar LED device further includes a high resistance layer located between the n-type semiconductor layer and the insulating layer.

[0019] In the above-mentioned embodiments of the present application, by inserting a high-resistance layer between the n-type semiconductor layer and the insulating layer and utilizing the high-resistance characteristics of the high-resistance layer, the resistance of the transmission path between the electrode (first electrode or second electrode) connected to the insulating layer and the n-type semiconductor layer can be increased, thereby further reducing the leakage problem of the electrode connected to the insulating layer, thereby facilitating reducing the power consumption of the light-emitting substrate.

[0020] In some embodiments, the material of the high resistance layer includes aluminum gallium nitride, which has a high resistance.

[0021] In some embodiments, the nanopillar LED device further includes a second p-type semiconductor layer and a second multi-quantum well layer, both of which are located on a side of the n-type semiconductor layer away from the first multi-quantum well layer, and the second multi-quantum well layer is located between the second p-type semiconductor layer and the n-type semiconductor layer.

[0022] When the length of the nanorod LED device extends along the first direction, the second p-type semiconductor layer is connected to the second electrode; when the length of the nanorod LED device extends along the second direction, the second p-type semiconductor layer is connected to the first electrode.

[0023] In the above-mentioned embodiments of the present application, based on the symmetrical design of the three electrodes, the nanocolumn LED device adopts a centrally symmetrical structural design. After the orientation process, regardless of whether the length extension direction of the nanocolumn LED device is along the first direction or the second direction, the first p-type semiconductor layer and the second p-type semiconductor layer of the nanocolumn LED device are respectively connected to the first electrode or the second electrode.

[0024] Furthermore, along the length of the nanopillar LED device, the n-type semiconductor layer is located near its central region. Regardless of whether the nanopillar LED device extends in the first or second direction, the n-type semiconductor layer is always connected to the third electrode. This allows all nanopillar LED devices to emit light simultaneously during a single drive cycle, achieving 100% utilization of the nanopillar LED devices.

[0025] In addition, since the nanocolumn LED device has a double-ended light-emitting structure, the luminous density and intensity of the nanocolumn LED device will be improved, which is beneficial to improving the luminous efficiency of the light-emitting substrate.

[0026] In some embodiments, the nanorod LED device has a centrosymmetric structure.

[0027] In some embodiments, the n-type semiconductor layer includes two sub-layers, and the two sub-layers are connected by an adhesive layer to improve the connection strength between the two sub-layers.

[0028] In some embodiments, the nanocolumn LED device further includes a first contact layer located on a side of the first p-type semiconductor layer away from the first multi-quantum well layer, and the first p-type semiconductor layer is connected to the first electrode or the second electrode through the first contact layer.

[0029] In the case where the nanopillar LED device further includes a second p-type semiconductor layer and a second multi-quantum well layer, the nanopillar LED device further includes a second contact layer, the second contact layer is located on a side of the second p-type semiconductor layer away from the second multi-quantum well layer, and the second p-type semiconductor layer is connected to the second electrode or the first electrode through the second contact layer.

[0030] In the above embodiment, by adding a first contact layer on the outside of the first p-type semiconductor layer, the first p-type semiconductor layer is electrically connected to the first contact layer, and the first p-type semiconductor layer and the first contact layer are both electrically connected to the first electrode or the second electrode, which is beneficial to improving the performance of the ohmic contact between the first p-type semiconductor layer and the first electrode or the second electrode.

[0031] By adding a second contact layer on the outside of the second p-type semiconductor layer, the second p-type semiconductor layer is electrically connected to the second contact layer, and both the second p-type semiconductor layer and the second contact layer are electrically connected to the first electrode or the second electrode, which is beneficial to improving the ohmic contact performance between the second p-type semiconductor layer and the first electrode or the second electrode.

[0032] In some embodiments, the first electrode and the second electrode respectively cover the two ends of the nanopillar LED device. The nanopillar LED device also includes a first dielectric layer, the first dielectric layer surrounding the side surfaces of the first multi-quantum well layer and surrounding the side surfaces of a portion of the n-type semiconductor layer adjacent to the first multi-quantum well layer. The first dielectric layer separates the first electrode from the first multi-quantum well layer and from the n-type semiconductor layer, or the first dielectric layer separates the second electrode from the first multi-quantum well layer and from the n-type semiconductor layer.

[0033] In the case where the nanopillar LED device further includes a second p-type semiconductor layer and a second multi-quantum well layer, the nanopillar LED device further includes a second dielectric layer, the second dielectric layer surrounding a side surface of the second multi-quantum well layer and surrounding a side surface of a portion of the n-type semiconductor layer adjacent to the second multi-quantum well layer. The second dielectric layer separates the second electrode from the second multi-quantum well layer and from the n-type semiconductor layer, or the second dielectric layer separates the first electrode from the second multi-quantum well layer and from the n-type semiconductor layer.

[0034] In the above embodiment, the first electrode and the second electrode respectively cover the two ends of the nanopillar LED device. When the length of the nanopillar LED device extends along the first direction, the first dielectric layer can separate the first electrode from the first multi-quantum well layer, and the first dielectric layer can separate the first electrode from the n-type semiconductor layer, thereby preventing the first electrode from contacting the first multi-quantum well layer and the n-type semiconductor layer and causing a short circuit. The second dielectric layer can separate the second electrode from the second multi-quantum well layer, and the second dielectric layer can separate the second electrode from the n-type semiconductor layer, thereby preventing the second electrode from contacting the second multi-quantum well layer and the n-type semiconductor layer and causing a short circuit.

[0035] Similarly, when the length of the nanopillar LED device extends along the second direction, the first dielectric layer can separate the second electrode from the first multi-quantum well layer, and the first dielectric layer can separate the second electrode from the n-type semiconductor layer, thereby preventing the second electrode from contacting the first multi-quantum well layer and the n-type semiconductor layer and causing a short circuit. The second dielectric layer can separate the first electrode from the second multi-quantum well layer, and the second dielectric layer can separate the first electrode from the n-type semiconductor layer, thereby preventing the first electrode from contacting the second multi-quantum well layer and the n-type semiconductor layer and causing a short circuit.

[0036] In some embodiments, the light-emitting substrate further includes a third dielectric layer that separates the third electrode from the first electrode and separates the third electrode from the second electrode. The third dielectric layer has an opening that exposes a portion of the n-type semiconductor layer away from the first multi-quantum well layer. The third electrode passes through the opening and is connected to the n-type semiconductor layer.

[0037] In the above embodiment, the third dielectric layer can separate the third electrode from the first electrode and the third electrode from the second electrode to avoid short circuit between the positive electrode (the first electrode and the second electrode) and the negative electrode (the third electrode).

[0038] In some embodiments, the center line of the opening perpendicular to the length extension direction of the nanopillar LED device coincides with the center line of the nanopillar LED device perpendicular to the length extension direction, thereby ensuring that the opening can expose the n-type semiconductor layer of the nanopillar LED device so that the third electrode can be accurately connected to the n-type semiconductor layer through the opening.

[0039] In some embodiments, along the length extension direction of the nanocolumn LED device, the lengths of the portions of the first electrode and the second electrode covering the nanocolumn LED device are equal, ensuring the relative position accuracy between the nanocolumn LED device and the first electrode and the second electrode, so as to ensure that the first p-type semiconductor layer of the nanocolumn LED device can be accurately connected to the first electrode or the second electrode.

[0040] In some embodiments, a material of at least one of the first electrode, the second electrode, and the third electrode includes a light-transmitting material.

[0041] In the above embodiment, the first, second, and third electrodes are all located on the light-emitting side of the nanopillar LED device, and light must pass through the first, second, and third electrodes to be emitted. Therefore, using a light-transmitting material for at least one of the first, second, and third electrodes helps improve the light emission rate, thereby enhancing the luminous efficiency of the light-emitting substrate.

[0042] In some embodiments, a material of at least one of the first electrode, the second electrode, and the third electrode includes at least one of indium tin oxide, zinc tin oxide, and graphene, all of which have good light transmittance.

[0043] In some embodiments, the light-emitting substrate includes a plurality of nanopillar LED devices arranged in sequence along a third direction, the third direction being perpendicular to the lengthwise extension direction of the nanopillar LED devices. A first electrode, a second electrode, and a third electrode extend along the third direction, the first electrode covers ends of the plurality of nanopillar LED devices on one side of the third electrode, the second electrode covers ends of the plurality of nanopillar LED devices on the other side of the third electrode, and the third electrode covers the middle portions of the plurality of nanopillar LED devices, so that the plurality of nanopillar LED devices are driven to emit light via the first, second, and third electrodes.

[0044] In some embodiments, the light-emitting substrate further includes a first alignment electrode, a second alignment electrode, and a fourth dielectric layer disposed on the substrate. The first alignment electrode and the second alignment electrode are arranged along the length of the nanopillar LED device. In an orthographic projection onto the substrate, the nanopillar LED device is located between the first alignment electrode and the second alignment electrode. The fourth dielectric layer covers the first and second alignment electrodes and is located between the substrate and the nanopillar LED device.

[0045] In the above embodiment, the first orientation electrode and the second orientation electrode can generate an orientation electric field. During the orientation process, driven by the orientation electric field, the multiple nano-pillar LED devices rotate until the length extension direction of the multiple nano-pillar LED devices is toward the first direction or the second direction.

[0046] In a second aspect, a nano-pillar LED device is provided. The nano-pillar LED device includes an insulating layer, an n-type semiconductor layer, a multi-quantum well layer, and a p-type semiconductor layer arranged in sequence.

[0047] In some embodiments, the nano-pillar LED device further includes a high resistance layer, where the high resistance layer is located between the n-type semiconductor layer and the insulating layer.

[0048] In some embodiments, the nano-pillar LED device further includes a contact layer, where the contact layer is located on a side of the p-type semiconductor layer away from the multi-quantum well layer.

[0049] In some embodiments, the nano-pillar LED device further includes a first dielectric layer, the first dielectric layer surrounding a side surface of the multi-quantum well layer and surrounding a side surface of a portion of the n-type semiconductor layer adjacent to the multi-quantum well layer.

[0050] In a third aspect, a method for fabricating a nanopillar LED device is provided. The method comprises: forming a stacked structure on a first substrate, the stacked structure comprising an insulating film, an n-type semiconductor film, a multi-quantum well film, and a p-type semiconductor film stacked in sequence; and etching the stacked structure to form the nanopillar LED device.

[0051] In a fourth aspect, a nano-pillar LED device is provided, which includes a first p-type semiconductor layer, a first multi-quantum well layer, an n-type semiconductor layer, a second multi-quantum well layer and a second p-type semiconductor layer arranged in sequence.

[0052] In some embodiments, the nanorod LED device has a centrosymmetric structure.

[0053] In some embodiments, the n-type semiconductor layer includes two sub-layers, and the two sub-layers are connected by an adhesive layer.

[0054] In some embodiments, the nanopillar LED device further includes a first contact layer and a second contact layer, wherein the first contact layer is located on a side of the first p-type semiconductor layer away from the first multi-quantum well layer, and the second contact layer is located on a side of the second p-type semiconductor layer away from the second multi-quantum well layer.

[0055] In some embodiments, the nanopillar LED device further includes a first dielectric layer and a second dielectric layer, wherein the first dielectric layer surrounds sides of the first multi-quantum well layer and surrounds sides of a portion of the n-type semiconductor layer proximate to the first multi-quantum well layer, and the second dielectric layer surrounds sides of the second multi-quantum well layer and surrounds sides of a portion of the n-type semiconductor layer proximate to the second multi-quantum well layer.

[0056] In a fifth aspect, a method for preparing a nanocolumn LED device is provided, the method comprising: forming a stacking structure on a first substrate, the stacking structure comprising an insulating film, an n-type semiconductor film, a multi-quantum well film, and a p-type semiconductor film stacked in sequence. Inverting the stacking structure and transferring it to a second substrate. Removing the insulating film at the top of the stacking structure to obtain a structure to be bonded. Bonding the two structures to be bonded, and adhering the n-type semiconductor films of the two structures to be bonded to form a bonding structure. Removing the second substrate at the top of the bonding structure. Etching the bonding structure to form a nanocolumn LED device.

[0057] In a sixth aspect, a method for preparing a light-emitting substrate is provided, the method comprising: placing a nanopillar LED device on a substrate, wherein the length extension direction of the nanopillar LED device is parallel to the substrate, and the nanopillar LED device is the nanopillar LED device provided by any of the above embodiments. Forming a first electrode and a second electrode, wherein the first electrode and the second electrode respectively cover the two ends of the nanopillar LED device. Forming a third dielectric layer, wherein the third dielectric layer has an opening exposing the n-type semiconductor layer of the nanopillar LED device. Forming a third electrode, wherein the third electrode is located between the first electrode and the second electrode, and the third electrode passes through the opening and is connected to the n-type semiconductor layer.

[0058] In a seventh aspect, a backlight module is provided, which includes the light-emitting substrate provided by any of the above embodiments, and a plurality of optical films arranged on the light-emitting side of the light-emitting substrate.

[0059] In an eighth aspect, a display device is provided, which includes the backlight module provided in the above embodiment, and a display panel arranged on the light-emitting side of the backlight module.

[0060] It can be understood that the beneficial effects achieved by the backlight module and the display device provided by the above embodiments of the present application can be referred to the beneficial effects of the light-emitting substrate described above, and will not be repeated here.

[0061] In a ninth aspect, a display panel is provided, which includes the light-emitting substrate provided by any of the above embodiments, and a color filter layer arranged on the light-emitting side of the light-emitting substrate.

[0062] In a tenth aspect, a display device is provided, which includes the display panel provided by the above embodiment and a circuit board electrically connected to the display panel.

[0063] It can be understood that the beneficial effects that can be achieved by the display panel and the display device provided by the above embodiments of the present application can refer to the beneficial effects of the light-emitting substrate mentioned above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] To more clearly illustrate the technical solutions of this application, the following briefly introduces the drawings required for use in some embodiments of this application. Obviously, the drawings described below are only drawings of some embodiments of this application, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of this application.

[0065] FIG1 is a top view of a nanocolumn LED light-emitting substrate in the related art;

[0066] FIG2 is a cross-sectional view of the light-emitting substrate in FIG1 along section line AA′;

[0067] FIG3 is a top view of a light emitting substrate according to some embodiments;

[0068] FIG4 is a partial enlarged view of the light-emitting substrate at position M in FIG3 ;

[0069] FIG5 is a cross-sectional view of the light-emitting substrate along section line BB′ in FIG4 ;

[0070] FIG6 is a cross-sectional view of the light-emitting substrate along section line CC′ in FIG4 ;

[0071] FIG7 is a structural diagram of a nanocolumn LED device in a light-emitting substrate according to some embodiments;

[0072] 8A to 8D are diagrams showing steps of preparing a nanorod LED device according to some embodiments;

[0073] 9A to 9D are diagrams showing steps of preparing a light-emitting substrate according to some embodiments;

[0074] FIG10 is another structural diagram of a light-emitting substrate according to some embodiments;

[0075] FIG11 is another structural diagram of a nanorod LED device according to some embodiments;

[0076] 12A to 12H are diagrams showing steps of fabricating a nanorod LED device according to some embodiments;

[0077] 13A to 13D are diagrams showing steps of preparing another light-emitting substrate according to some embodiments;

[0078] FIG14 is a structural diagram of a backlight module according to some embodiments;

[0079] FIG15 is a structural diagram of a display device according to some embodiments;

[0080] FIG16 is a structural diagram of a display panel according to some embodiments;

[0081] FIG. 17 is a structural diagram of another display device according to some embodiments. DETAILED DESCRIPTION

[0082] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the embodiments described are only some embodiments of the present application, not all embodiments. Based on the embodiments provided in this application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0083] In the description of this application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0084] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as having an open, inclusive meaning, that is, "including, but not limited to." In the description of the specification, the terms "one embodiment," "some embodiments," "exemplary embodiments," "exemplarily," or "some examples" are intended to indicate that specific features, structures, materials, or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present application. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials, or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0085] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of this application, unless otherwise specified, "plurality" means two or more.

[0086] When describing some embodiments, the term "connected" and its derivatives may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components are in direct physical or electrical contact with each other.

[0087] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0088] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0089] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0090] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0091] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0092] Nanocolumn LED luminescence technology is a new luminescence technology based on nanocolumn LED devices. FIG1 is a top view of a nanocolumn LED luminescence substrate in the related technology; FIG2 is a cross-sectional view of the luminescence substrate in FIG1 along section line AA′.

[0093] 1 and 2 , a nanocolumn LED light-emitting substrate 100 ′ includes a substrate 101 ′, a first orientation electrode 102 ′ and a second orientation electrode 103 ′ disposed on the substrate 101 ′, a first dielectric layer 104 ′ covering the first orientation electrode 102 ′ and the second orientation electrode 103 ′, a nanocolumn LED device 105 ′ disposed on a side of the first dielectric layer 104 ′ away from the substrate 101 ′, and a first electrode 106 ′ and a second electrode 107 ′ connected to both ends of the nanocolumn LED device 105 ′.

[0094] The length extension direction of the nanocolumn LED device 105 ′ is parallel to the substrate 101 ′, the first electrode 106 ′ and the second electrode 107 ′ are arranged along the length extension direction of the nanocolumn LED device 105 ′, and multiple nanocolumn LED devices 105 ′ are horizontally arranged between the first electrode 106 ′ and the second electrode 107 ′.

[0095] The nanopillar LED device 105' includes a p-type semiconductor layer 105a', a multi-quantum well layer 105b', and an n-type semiconductor layer 105c', arranged in sequence, forming a pn junction. Because the pn junction has unidirectional conductivity, when the p-type semiconductor layer 105a' of the nanopillar LED device 105' is connected to the anode and the n-type semiconductor layer 105c' is connected to the cathode, the nanopillar LED device 105' can emit light when driven by the voltage between the first electrode 106' and the second electrode 107'. Conversely, when the p-type semiconductor layer 105a' of the nanopillar LED device 105' is connected to the cathode and the n-type semiconductor layer 105c' is connected to the anode, the nanopillar LED device 105' does not emit light.

[0096] Continuing to refer to Figures 1 and 2, the first electrode 106' is the positive electrode, the second electrode 107' is the negative electrode, and among the multiple nanocolumn LED devices 105', the p-type semiconductor layer 105a' of a portion of the nanocolumn LED devices 105' is connected to the first electrode 106', and the n-type semiconductor layer 105c' is connected to the second electrode 107'. This portion of the nanocolumn LED devices 105' can emit light when driven by the voltage between the first electrode 106' and the second electrode 107'. The p-type semiconductor layer 105a' of another part of the nanocolumn LED device 105' is connected to the second electrode 107', and the n-type semiconductor layer 105c' is connected to the first electrode 106'. This part of the nanocolumn LED device 105' does not emit light, resulting in the utilization rate of the nanocolumn LED device 105' not reaching 100%, thereby reducing the luminous efficiency of the nanocolumn LED light-emitting substrate 100'.

[0097] The inventors of this application have found through research that the above problems are caused by:

[0098] 1 and 2 , in the process of preparing the nanocolumn LED light-emitting substrate 100 ′, a first alignment electrode 102 ′ and a second alignment electrode 103 ′ are first formed on a substrate 101 ′. The first alignment electrode 102 ′ and the second alignment electrode 103 ′ are arranged along a direction X, and an alignment electric field can be generated between the first alignment electrode 102 ′ and the second alignment electrode 103 ′.

[0099] Then, a first dielectric layer 104' is formed to cover the first orientation electrode 102' and the second orientation electrode 103'. During the orientation process, a plurality of nanocolumn LED devices 105' are placed on the first dielectric layer 104'. Driven by the orientation electric field, the plurality of nanocolumn LED devices 105' rotate until the length extension direction of the plurality of nanocolumn LED devices 105' is parallel to the direction X.

[0100] Because the rotation of the nanopillar LED devices 105' is random, the probability of the p-type semiconductor layer 105a' of the nanopillar LED devices 105' being close to the first alignment electrode 102' and the probability of being close to the second alignment electrode 103' are both 50%. Therefore, after the alignment process, among the plurality of nanopillar LED devices 105', the p-type semiconductor layer 105a' of half the nanopillar LED devices 105' is close to the first alignment electrode 102', and the p-type semiconductor layer 105a' of half the nanopillar LED devices 105' is close to the second alignment electrode 103'.

[0101] After forming the first electrode 106' and the second electrode 107', the p-type semiconductor layers 105a' of half of the nanopillar LED devices 105' are connected to the first electrode 106', and the p-type semiconductor layers 105a' of the other half of the nanopillar LED devices 105' are connected to the second electrode 107'. As a result, during a single luminous drive cycle, only half of the nanopillar LED devices 105' can emit light normally, while the other half of the nanopillar LED devices 105' are inactive. This results in an actual utilization rate of only 50% for the multiple nanopillar LED devices 105', which in turn reduces the luminous efficiency of the nanopillar LED light-emitting substrate 100'.

[0102] Therefore, in the related art, within a light-emitting driving cycle, a method of changing the signal polarity can be adopted. For example, a light-emitting driving cycle includes at least one first stage and at least one second stage. During the first stage, the first electrode 106' receives a positive voltage signal (the first electrode 106' is positive), and the second electrode 107' receives a negative voltage signal (the second electrode 107' is negative). During the second stage, the first electrode 106' receives a negative voltage signal (the first electrode 106' is negative), and the second electrode 107' receives a positive voltage signal (the second electrode 107' is positive).

[0103] Using this method, during the first phase, half of the nanopillar LED devices 105' can emit light normally, while the other half cannot. During the second phase, the opposite happens: the nanopillar LED devices 105' that were emitting light during the first phase stop emitting light, while the nanopillar LED devices 105' that were not emitting light during the first phase begin to emit light, ensuring that all nanopillar LED devices 105' emit light during the driving cycle.

[0104] However, all nanopillar LED devices 105' cannot emit light simultaneously. This means that the actual utilization rate of the multiple nanopillar LED devices 105' remains at 50%, indicating no improvement in the utilization rate of the nanopillar LED devices 105'. Furthermore, implementing the aforementioned signal polarity conversion function requires the addition of a corresponding driver circuit on the substrate 101', which increases the complexity of product design.

[0105] Some embodiments of the present application provide a nanocolumn LED light-emitting substrate, FIG3 is a top view of the light-emitting substrate according to some embodiments; FIG4 is a local enlarged view of the light-emitting substrate in FIG3 at point M; FIG5 is a cross-sectional view of the light-emitting substrate in FIG4 along section line BB'; FIG6 is a cross-sectional view of the light-emitting substrate in FIG4 along section line CC'; FIG7 is a structural diagram of a nanocolumn LED device in a light-emitting substrate according to some embodiments.

[0106] 3 to 5 , the light-emitting substrate 100 includes a substrate 101 and a driving circuit layer D disposed on the substrate 101 . The driving circuit layer D includes a driving circuit composed of a plurality of transistors T for driving the light-emitting substrate 100 to emit light.

[0107] It should be noted that the light-emitting substrate 100 shown in FIG. 5 adopts an active drive design, that is, the driving circuit in the light-emitting substrate 100 is provided on the substrate 101 in the form of a film layer structure (driving circuit layer D).

[0108] In other embodiments, the light-emitting substrate 100 may also adopt a passive driving design, that is, the driving circuit layer D is not set on the substrate 101, and the driving circuit of the light-emitting substrate 100 is integrated on a separate circuit board, which is bound to the light-emitting substrate 100 to drive the light-emitting substrate 100 to emit light.

[0109] 5 , the light-emitting substrate 100 further includes a first orientation electrode 102 and a second orientation electrode 103 disposed on the substrate 101 , and a dielectric layer 104 covering the first orientation electrode 102 and the second orientation electrode 103 , wherein the first orientation electrode 102 and the second orientation electrode 103 are arranged along a direction X, and an orientation electric field is generated between the first orientation electrode 102 and the second orientation electrode 103 .

[0110] 4 and 5 , the light-emitting substrate 100 further includes a nanopillar LED device 105 disposed on the substrate 101. The nanopillar LED device 105 is located on a side of the dielectric layer 104 away from the substrate 101. The nanopillar LED device 105 has a columnar structure, with its length extending in a direction L parallel to the substrate 101. The orthographic projection of the nanopillar LED device 105 on the substrate 101 is located between the orthographic projections of the first alignment electrode 102 and the second alignment electrode 103 on the substrate 101.

[0111] It should be noted that, driven by the orientation electric field generated by the first orientation electrode 102 and the second orientation electrode 103, the multiple nanocolumn LED devices 105 rotate until the length extension direction L of the multiple nanocolumn LED devices 105 is along the first direction X1 or along the second direction X2, and the first direction X1 and the second direction X2 are opposite.

[0112] 7 , the nanorod LED device 105 includes a first p-type semiconductor layer 105 a , a first multi-quantum well layer 105 b , and an n-type semiconductor layer 105 c arranged along a length extension direction L. It can be understood that the nanorod LED device 105 is a pn junction.

[0113] For example, the material of the first p-type semiconductor layer 105a includes a semiconductor material doped with p-type ions, for example, the material of the first p-type semiconductor layer 105a may include p-type gallium nitride. Similarly, the material of the n-type semiconductor layer 105c includes a semiconductor material doped with n-type ions, for example, the material of the n-type semiconductor layer 105c may include n-type gallium nitride.

[0114] 4 to 7 , the light-emitting substrate 100 further includes a first electrode 106 , a second electrode 107 and a third electrode 108 , which are arranged along the length extension direction L of the nanorod LED device 105 , and the third electrode 108 is located between the first electrode 106 and the second electrode 107 .

[0115] It should be noted that, referring to Figure 4 , the first electrode 106 and the second electrode 107 are positive electrodes, receiving the same positive voltage signal; the third electrode 108 is negative electrode, receiving a negative voltage signal. The first electrode 106 and the second electrode 107 are symmetrically arranged about the center line E1 of the third electrode 108, i.e., the three electrodes are symmetrically designed.

[0116] Furthermore, the first direction X1 and the second direction X2 are parallel to the arrangement direction of the first electrode 106, the second electrode 107, and the third electrode 108. As shown in FIG5 , when the length extension direction L of the nanorod LED device 105 is along the first direction X1, the first p-type semiconductor layer 105a of the nanorod LED device 105 is connected to the first electrode 106.

[0117] As shown in FIG. 6 , when the length extension direction L of the nanorod LED device 105 is along the second direction X2 , the first p-type semiconductor layer 105 a of the nanorod LED device 105 is connected to the second electrode 107 .

[0118] Furthermore, the n-type semiconductor layer 105 c of the nanorod LED device 105 is connected to the third electrode 108 . The nanorod LED device 105 can emit light driven by the first electrode 106 and the third electrode 108 , or can emit light driven by the second electrode 107 and the third electrode 108 .

[0119] For example, referring to Figures 5 and 7 , the light-emitting substrate 100 further includes a dielectric layer 109. The dielectric layer 109 can separate the third electrode 108 from the first electrode 106 and from the second electrode 107 to prevent short circuits between the positive and negative electrodes. The dielectric layer 109 has an opening H that exposes the n-type semiconductor layer 105c of the nanorod LED device 105. Thus, the third electrode 108 can be connected to the n-type semiconductor layer 105c through the opening H.

[0120] The light-emitting substrate 100 provided in the above-described embodiment of the present application adopts a symmetrical design with three electrodes, wherein the first electrode 106 and the second electrode 107 are positive electrodes, and the third electrode 108 is a negative electrode, with the third electrode 108 being located between the first electrode 106 and the second electrode 107. During the orientation process for preparing the light-emitting substrate 100, a plurality of nanopillar LED devices 105 are placed on the dielectric layer 104. Driven by the orientation electric field generated by the first orientation electrode 102 and the second orientation electrode 103, the plurality of nanopillar LED devices 105 rotate until the length extension direction L of the plurality of nanopillar LED devices 105 is oriented in the first direction X1 or the second direction X2.

[0121] As shown in FIG5 , when the length extension direction L of the nanopillar LED device 105 is oriented in the first direction X1 (the first p-type semiconductor layer 105a is turned to the left), the first p-type semiconductor layer 105a can be connected to the first electrode 106 on the left. As shown in FIG6 , when the length extension direction L of the nanopillar LED device 105 is oriented in the second direction X2 (the first p-type semiconductor layer 105a is turned to the right), the first p-type semiconductor layer 105a can be connected to the second electrode 107 on the right. In other words, regardless of whether the first p-type semiconductor layer 105a of the nanopillar LED device 105 is turned to the left or right, there is an anode (the first electrode 106 or the second electrode 107) corresponding to and connected to it.

[0122] Furthermore, as shown in Figures 5 and 6 , along the length extension direction L of the nanopillar LED device 105, the n-type semiconductor layer 105c is located near its middle region. Therefore, regardless of whether the first p-type semiconductor layer 105a of the nanopillar LED device 105 is located on the left or right side, the n-type semiconductor layer 105c can be connected to the third electrode 108, ensuring that the first p-type semiconductor layer 105a of the nanopillar LED device 105 can be accurately connected to the first electrode 106 or the second electrode 107, and the n-type semiconductor layer 105c can be accurately connected to the third electrode 108. In this way, within a single light-emitting drive cycle, all nanopillar LED devices 105 can emit light simultaneously, and the utilization rate of the nanopillar LED devices 105 can reach 100%.

[0123] Compared to related art techniques in which only half of the nanopillar LED devices 105' can emit light simultaneously, in the embodiments of the present application, all nanopillar LED devices 105 can emit light simultaneously while the total operating current of the light-emitting substrate 100 remains unchanged, thereby improving the luminous efficiency of the light-emitting substrate 100. Alternatively, while the luminous efficiency of the light-emitting substrate 100 remains unchanged, the total operating current of the light-emitting substrate 100 can be reduced by approximately 50%.

[0124] In addition, in the embodiment of the present application, a symmetrical design of three electrodes is adopted, and there is no need to add a corresponding driving circuit on the substrate 101 to realize the function of changing the signal polarity. The film layer structure of the driving circuit layer D in the light-emitting substrate 100 can be simplified, reducing the design difficulty of the driving circuit.

[0125] In some embodiments, as shown in Figures 5 to 7, along the length extension direction L of the nanocolumn LED device 105, the length of the portion of the first electrode 106 covering the nanocolumn LED device 105 is equal to the length of the portion of the second electrode 107 covering the nanocolumn LED device 105, thereby ensuring the relative position accuracy between the nanocolumn LED device 105 and the first electrode 106 and the second electrode 107, so as to ensure that the first p-type semiconductor layer 105a of the nanocolumn LED device 105 can be accurately connected to the first electrode 106 or the second electrode 107.

[0126] In some embodiments, as shown in Figures 5 to 7 , the n-type semiconductor layer 105c is located near the center region of the nanopillar LED device 105 along its longitudinal extension direction L. Therefore, by arranging the center line E2 of the opening H, which is perpendicular to the longitudinal extension direction L of the nanopillar LED device 105, to coincide with the center line E3 of the nanopillar LED device 105, which is also perpendicular to the longitudinal extension direction L, the opening H can be ensured to expose the n-type semiconductor layer 105c, thereby facilitating accurate connection of the third electrode 108 to the n-type semiconductor layer 105c through the opening H.

[0127] In some embodiments, a material of at least one of the first electrode 106 , the second electrode 107 , and the third electrode 108 includes a light-transmitting material.

[0128] It is understood that the first electrode 106, the second electrode 107, and the third electrode 108 are all located on the light-emitting side of the nanorod LED device 105, and light must pass through the first electrode 106, the second electrode 107, and the third electrode 108. Therefore, at least one of the first electrode 106, the second electrode 107, and the third electrode 108 is made of a light-transmitting material, which helps to increase the light emission rate, thereby improving the luminous efficiency of the light-emitting substrate 100.

[0129] Illustratively, the material of the first electrode 106 includes at least one of indium tin oxide, zinc tin oxide, and graphene; the material of the second electrode 107 includes at least one of indium tin oxide, zinc tin oxide, and graphene; the material of the third electrode 108 includes at least one of indium tin oxide, zinc tin oxide, and graphene, and these materials all have good light transmittance.

[0130] In some embodiments, as shown in FIG. 3 and FIG. 4 , the light emitting substrate 100 includes a plurality of nanorod LED devices 105 sequentially arranged along a third direction Y, where the third direction Y is perpendicular to a lengthwise extension direction L of the nanorod LED devices 105 .

[0131] The first electrode 106, the second electrode 107 and the third electrode 108 extend along the third direction Y, the first electrode 106 covers the end portions of the multiple nanocolumn LED devices 105 located on one side of the third electrode 108, the second electrode 107 covers the end portions of the multiple nanocolumn LED devices 105 located on the other side of the third electrode 108, and the third electrode 108 covers the middle portions of the multiple nanocolumn LED devices 105, so as to drive the multiple nanocolumn LED devices 105 to emit light through the first electrode 106, the second electrode 107 and the third electrode 108.

[0132] For example, referring to FIG4 , the length of the nanopillar LED device 105 ranges from 3 μm to 10 μm, the widths of the first electrode 106 and the second electrode 107 are greater than 3 μm, and the width of the third electrode 108 ranges from 2 μm to 3 μm. Furthermore, the portion of the first electrode 106 covering the nanopillar LED device 105 ranges from 1 μm to 3 μm, and the portion of the second electrode 107 covering the nanopillar LED device 105 ranges from 1 μm to 3 μm.

[0133] To adapt to the symmetrical design of the three electrodes and ensure that the first p-type semiconductor layer 105a of the nanocolumn LED device 105 can be accurately connected to the first electrode 106 or the second electrode 107, and the n-type semiconductor layer 105c can be accurately connected to the third electrode 108, some embodiments of the present application provide a structural design of the nanocolumn LED device as shown in Figure 7.

[0134] In some embodiments, as shown in FIG. 5 to FIG. 7 , the nano-column LED device 105 further includes an insulating layer 105 d . The insulating layer 105 d is located on a side of the n-type semiconductor layer 105 c away from the first multi-quantum well layer 105 b .

[0135] Exemplarily, the material of the insulating layer 105d includes intrinsic gallium nitride, which is not doped with other elements and has high resistance and good insulation performance.

[0136] As shown in FIG. 5 , when the length extension direction L of the nanorod LED device 105 is along the first direction X1 , the first p-type semiconductor layer 105 a is connected to the first electrode 106 , and the insulating layer 105 d is connected to the second electrode 107 .

[0137] As shown in FIG. 6 , when the length extension direction L of the nanorod LED device 105 is along the second direction X2 , the first p-type semiconductor layer 105 a is connected to the second electrode 107 , and the insulating layer 105 d is connected to the first electrode 106 .

[0138] In the above-described embodiment of the present application, by adding an insulating layer 105d on a side of the n-type semiconductor layer 105c away from the first multi-quantum well layer 105b, when the first p-type semiconductor layer 105a of the nanopillar LED device 105 is connected to the first electrode 106, the insulating layer 105d can be connected to the second electrode 107. When the first p-type semiconductor layer 105a of the nanopillar LED device 105 is connected to the second electrode 107, the insulating layer 105d can be connected to the first electrode 106. Utilizing the high resistance of the insulating layer 105d, leakage problems of the electrode (the first electrode 106 or the second electrode 107) connected to the insulating layer 105d can be reduced, thereby facilitating reduced power consumption of the light-emitting substrate 100.

[0139] In some embodiments, as shown in FIG. 7 , the nano-rod LED device 105 further includes a high resistance layer 105 e , which is located between the n-type semiconductor layer 105 c and the insulating layer 105 d .

[0140] For example, the material of the high resistance layer 105e may include aluminum gallium nitride, which has a high resistance.

[0141] In the above-mentioned embodiment of the present application, by inserting a high-resistance layer 105e between the n-type semiconductor layer 105c and the insulating layer 105d, and utilizing the high-resistance characteristics of the high-resistance layer 105e, the resistance of the transmission path between the electrode (first electrode 106 or second electrode 107) connected to the insulating layer 105d and the n-type semiconductor layer 105c can be increased, thereby further reducing the leakage problem of the electrode connected to the insulating layer 105d, thereby facilitating reducing the power consumption of the light-emitting substrate 100.

[0142] In some embodiments, as shown in Figures 5 and 7, the nanocolumn LED device 105 further includes a first contact layer 105f, which is located on a side of the first p-type semiconductor layer 105a away from the first multi-quantum well layer 105b. The first p-type semiconductor layer 105a can be connected to the first electrode 106 through the first contact layer 105f.

[0143] As shown in FIG. 6 and FIG. 7 , the first p-type semiconductor layer 105 a may be connected to the second electrode 107 through the first contact layer 105 f .

[0144] It can be understood that by adding a first contact layer 105f on the outside of the first p-type semiconductor layer 105a, the first p-type semiconductor layer 105a is electrically connected to the first contact layer 105f, and the first p-type semiconductor layer 105a and the first contact layer 105f are both electrically connected to the first electrode 106 or the second electrode 107, which is beneficial to improving the ohmic contact performance between the first p-type semiconductor layer 105a and the first electrode 106 or the second electrode 107.

[0145] It should be noted that low-resistance ohmic contact is the basis for achieving high-quality devices. To achieve low-resistance ohmic contact between the first p-type semiconductor layer 105 a and the metal, a low contact barrier height must be met between the two.

[0146] When the material of the first p-type semiconductor layer 105a includes p-type gallium nitride, since gallium nitride is an ionic crystal, its metal-semiconductor contact properties are manifested in that the Fermi level pinning effect is weak and the surface state density at the interface between gallium nitride and the metal is low. Therefore, the contact barrier height between the first p-type semiconductor layer 105a and the metal mainly depends on: the work function of the metal material.

[0147] Without considering the influence of surface states, a metal with a large work function can be selected to contact the first p-type semiconductor layer 105a. For example, the material of the first contact layer 105f includes at least one of nickel and gold, which can reduce the contact barrier height between the first p-type semiconductor layer 105a and the metal. Furthermore, a metal with a small work function can be selected to contact the n-type semiconductor layer 105c, which can reduce the contact barrier height between the n-type semiconductor layer 105c and the metal.

[0148] As mentioned above, the materials of the first electrode 106 and the second electrode 107 are at least one of indium tin oxide, zinc tin oxide, and graphene. The work function of these materials is relatively small, so that the contact barrier height of the first p-type semiconductor layer 105a in direct contact with the first electrode 106 or the second electrode 107 is relatively large, which will result in a higher resistance of the ohmic contact between the two.

[0149] Based on this, in some embodiments, as shown in Figures 5 to 7, by adding a first contact layer 105f on the outside of the first p-type semiconductor layer 105a, and the work function of the material of the first contact layer 105f is greater than the work function of the material of the first electrode 106 and the second electrode 107, the contact barrier height between the first p-type semiconductor layer 105a and the first contact layer 105f can be reduced, thereby achieving low-resistance ohmic contact between the first p-type semiconductor layer 105a and the first contact layer 105f.

[0150] As mentioned above, the material of the third electrode 108 is at least one of indium tin oxide, zinc tin oxide, and graphene. The work function of these materials is relatively small. Therefore, as shown in Figures 5 and 7, the n-type semiconductor layer 105c can directly contact the second electrode 108, so that there is a low contact barrier height between the two, thereby achieving low-resistance ohmic contact between the n-type semiconductor layer 105c and the second electrode 108.

[0151] In some embodiments, as shown in FIG. 5 to FIG. 7 , the nano-column LED device 105 further includes a first dielectric layer 105 g , which is disposed around the side of the columnar structure.

[0152] The n-type semiconductor layer 105c is divided into two parts, including a part close to the first multi-quantum well layer 105b and a part away from the first multi-quantum well layer 105b. The first dielectric layer 105g surrounds the side of the first multi-quantum well layer 105b and surrounds the side of the part of the n-type semiconductor layer 105c close to the first multi-quantum well layer 105b.

[0153] Adopting the structural design of the above-mentioned nanocolumn LED device 105, referring to FIG5 , the first electrode 106 and the second electrode 107 respectively cover the two ends of the nanocolumn LED device 105. When the length extension direction L of the nanocolumn LED device 105 is along the first direction X1, the first dielectric layer 105g can separate the first electrode 106 from the first multi-quantum well layer 105b, and the first dielectric layer 105g can separate the first electrode 106 from the n-type semiconductor layer 105c, thereby avoiding the first electrode 106 from contacting the first multi-quantum well layer 105b and the n-type semiconductor layer 105c and causing a short circuit problem.

[0154] 6 , when the length extension direction L of the nanocolumn LED device 105 is along the second direction X2, the first dielectric layer 105g can separate the second electrode 107 from the first multi-quantum well layer 105b, and the first dielectric layer 105g can separate the second electrode 107 from the n-type semiconductor layer 105c, thereby preventing the second electrode 107 from contacting the first multi-quantum well layer 105b and the n-type semiconductor layer 105c and causing a short circuit problem.

[0155] It should be noted that, referring to Figures 5 to 7, in order to ensure that the first dielectric layer 105g can completely separate the first electrode 106 and the first multi-quantum well layer 105b, or to ensure that the first dielectric layer 105g can completely separate the second electrode 107 and the first multi-quantum well layer 105b, the boundary of the first dielectric layer 105g close to the first multi-quantum well layer 105b exceeds the first multi-quantum well layer 105b, that is, the first dielectric layer 105g will also surround the side of the portion of the first p-type semiconductor layer 105a close to the first multi-quantum well layer 105b.

[0156] Some embodiments of the present application further provide a method for preparing the nano-column LED device 105 shown in FIG. 7 . FIG. 8A to FIG. 8D are diagrams showing the steps of preparing the nano-column LED device according to some embodiments.

[0157] The above preparation method includes the following S10 to S12:

[0158] S10: As shown in FIG8A , a stacked structure F is formed on the first substrate K1 . The stacked structure F includes an insulating film d, an n-type semiconductor film c, a multi-quantum well film b, and a p-type semiconductor film a stacked in sequence.

[0159] Exemplarily, the stacked structure F further includes a high resistance film e and a contact film f, wherein the high resistance film e is located between the insulating film d and the n-type semiconductor film c, and the contact film f is located on the side of the p-type semiconductor film a away from the multi-quantum well film b.

[0160] Illustratively, the thickness of the insulating film d ranges from 1 μm to 3 μm, the thickness of the high resistance film e ranges from 0.05 μm to 0.5 μm, the thickness of the n-type semiconductor film c ranges from 3 μm to 4 μm, the thickness of the multi-quantum well film b ranges from 0.05 μm to 0.2 μm, and the thickness of the p-type semiconductor film a ranges from 0.05 μm to 0.5 μm.

[0161] S11 : as shown in FIG. 8B and FIG. 8C , the stacked structure F is etched to form a nano-column LED device 105 .

[0162] Exemplarily, as shown in FIG8B , a mask layer G is formed on top of the stacked structure F, where the mask layer G includes a plurality of circular patterns.

[0163] As shown in FIG. 8B and FIG. 8C , the stacked structure F is etched through the mask layer G to form a plurality of nano-rod LED devices 105 .

[0164] In some embodiments, after S20, the preparation method further includes the following S30:

[0165] S12: As shown in FIG8D , a first dielectric layer 105g is formed. The first dielectric layer 105g surrounds the side surface of the first multi-quantum well layer 105b and surrounds the side surface of the portion of the n-type semiconductor layer 105c close to the first multi-quantum well layer 105b.

[0166] Some embodiments of the present application further provide a method for preparing a light-emitting substrate. FIG. 9A to FIG. 9D are diagrams showing the steps of preparing a light-emitting substrate according to some embodiments.

[0167] The above preparation method includes the following S20 to S23:

[0168] S20 : ​​As shown in FIG. 9A , the nanorod LED device 105 shown in FIG. 7 is provided, and the nanorod LED device 105 is placed on a substrate 101 , with a length extension direction L of the nanorod LED device 105 being parallel to the substrate 101 .

[0169] It should be noted that an alignment electric field can be generated between the first alignment electrode 102 and the second alignment electrode 103 , and the multiple nanocolumn LED devices 105 rotate under the drive of the alignment electric field until the length extension direction L of the multiple nanocolumn LED devices 105 is along the first direction X1 or along the second direction X2.

[0170] S21 : As shown in FIG. 9B , a first electrode 106 and a second electrode 107 are formed. The first electrode 106 and the second electrode 107 cover two ends of the nanorod LED device 105 , respectively.

[0171] S22 : As shown in FIG. 9C , a dielectric layer 109 is formed. The dielectric layer 109 has an opening H exposing the n-type semiconductor layer 105 c of the nanorod LED device 105 .

[0172] S23 : As shown in FIG. 9D , a third electrode 108 is formed. The third electrode 108 is located between the first electrode 106 and the second electrode 107 , and the third electrode 108 passes through the opening H of the dielectric layer 109 and is connected to the n-type semiconductor layer 105 c .

[0173] Some embodiments of the present application also provide a structural design of a light-emitting substrate and a nano-column LED device. FIG10 is another structural diagram of a light-emitting substrate according to some embodiments; FIG11 is another structural diagram of a nano-column LED device according to some embodiments.

[0174] 10 and 11 , the nanocolumn LED device 105 includes a first p-type semiconductor layer 105 a , a first multi-quantum well layer 105 b , an n-type semiconductor layer 105 c , a second multi-quantum well layer 105 h , and a second p-type semiconductor layer 105 i , which are sequentially arranged. It is understood that the nanocolumn LED device 105 is a centrosymmetric structure.

[0175] 10 and 11 , when the length extension direction L of the nanorod LED device 105 is along the first direction X1 , the first p-type semiconductor layer 105 a of the nanorod LED device 105 is connected to the first electrode 106 , and the second p-type semiconductor layer 105 i is connected to the second electrode 107 .

[0176] Similarly, when the length extension direction L of the nanorod LED device 105 is along the second direction X2 , the first p-type semiconductor layer 105 a of the nanorod LED device 105 is connected to the second electrode 107 , and the second p-type semiconductor layer 105 i is connected to the first electrode 106 .

[0177] It can be understood that regardless of whether the length extension direction L of the nanopillar LED device 105 is along the first direction X1 or the second direction X2, the first p-type semiconductor layer 105a and the second p-type semiconductor layer 105i of the nanopillar LED device 105 are respectively connected to the first electrode 106 or the second electrode 107. Furthermore, the n-type semiconductor layer 105c of the nanopillar LED device 105 is always connected to the third electrode 108, so that both ends of the nanopillar LED device 105 emit light under the drive of the first electrode 106 and the third electrode 108, and under the drive of the second electrode 107 and the third electrode 108. In other words, the nanopillar LED device 105 has a double-ended light-emitting structure.

[0178] For example, referring to Figures 10 and 11 , the light-emitting substrate 100 further includes a dielectric layer 109. The dielectric layer 109 can separate the third electrode 108 from the first electrode 106 and from the second electrode 107 to prevent short circuits between the positive electrode (the first electrode 106 and the second electrode 107) and the negative electrode (the third electrode 108). The dielectric layer 109 has an opening H that exposes the n-type semiconductor layer 105c of the nanopillar LED device 105. Thus, the third electrode 108 can be connected to the n-type semiconductor layer 105c through the opening H.

[0179] In the above-described embodiment of the present application, based on a symmetrical design of three electrodes, the first electrode 106 and the second electrode 107 are positive electrodes, the third electrode 108 is a negative electrode, and the third electrode 108 is located between the first electrode 106 and the second electrode 107. The nanopillar LED device 105 adopts a centrally symmetrical structural design. After the alignment process, regardless of whether the length extension direction L of the nanopillar LED device 105 is along the first direction X1 or the second direction X2, the first p-type semiconductor layer 105a and the second p-type semiconductor layer 105i of the nanopillar LED device 105 are respectively connected to the first electrode 106 or the second electrode 107.

[0180] Furthermore, as shown in Figures 10 and 11 , along the length extension direction L of the nanopillar LED device 105, the n-type semiconductor layer 105c is located near the middle region thereof. Regardless of whether the length extension direction L of the nanopillar LED device 105 is along the first direction X1 or the second direction X2, the n-type semiconductor layer 105c is always connected to the third electrode 108. Thus, within a single light-emitting drive cycle, all nanopillar LED devices 105 can emit light simultaneously, achieving 100% utilization of the nanopillar LED devices 105.

[0181] In addition, since the nano-rod LED device 105 has a double-ended light-emitting structure, the light-emitting density and intensity of the nano-rod LED device 105 are improved, which is beneficial to improving the light-emitting efficiency of the light-emitting substrate 100 .

[0182] In some embodiments, as shown in FIG. 11 , the n-type semiconductor layer 105 c includes two sub-layers 1051 . The two sub-layers 1051 are connected by an adhesive layer N to improve the connection strength between the two sub-layers 1051 .

[0183] Exemplarily, the material of the bonding layer N includes gold.

[0184] Illustratively, the thickness of the adhesive layer N is 0.3 μm.

[0185] In some embodiments, as shown in Figure 11, the nanocolumn LED device 105 includes a first contact layer 105f and a second contact layer 105j. The first contact layer 105f is located on the side of the first p-type semiconductor layer 105a away from the first multi-quantum well layer 105b. The first p-type semiconductor layer 105a can be connected to the first electrode 106 or the second electrode 107 through the first contact layer 105f.

[0186] It can be understood that by adding a first contact layer 105f on the outside of the first p-type semiconductor layer 105a, the first p-type semiconductor layer 105a is electrically connected to the first contact layer 105f, and the first p-type semiconductor layer 105a and the first contact layer 105f are both electrically connected to the first electrode 106 or the second electrode 107, which is beneficial to improving the ohmic contact performance between the first p-type semiconductor layer 105a and the first electrode 106 or the second electrode 107.

[0187] As shown in FIG11 , the second contact layer 105 j is located on a side of the second p-type semiconductor layer 105 i away from the second multi-quantum well layer 105 h . The second p-type semiconductor layer 105 i can be connected to the first electrode 106 or the second electrode 107 through the second contact layer 105 j .

[0188] It can be understood that by adding a second contact layer 105j on the outside of the second p-type semiconductor layer 105i, the second p-type semiconductor layer 105i is electrically connected to the second contact layer 105j, and the second p-type semiconductor layer 105i and the second contact layer 105j are both electrically connected to the first electrode 106 or the second electrode 107, which is beneficial to improving the ohmic contact performance between the second p-type semiconductor layer 105i and the first electrode 106 or the second electrode 107.

[0189] Exemplarily, the material of the first contact layer 105f includes at least one of nickel and gold.

[0190] Exemplarily, the material of the second contact layer 105 j includes at least one of nickel and gold.

[0191] In some embodiments, as shown in FIG. 10 and FIG. 11 , the nanocolumn LED device 105 includes a first dielectric layer 105 g and a second dielectric layer 105 k , and the first dielectric layer 105 g and the second dielectric layer 105 k are respectively disposed around the sides of the columnar structure.

[0192] The n-type semiconductor layer 105c is divided into three parts. The n-type semiconductor layer 105c includes a part close to the first multi-quantum well layer 105b, a part close to the second multi-quantum well layer 105h, and a connecting part located therebetween. It can be understood that the connecting part is far away from both the first multi-quantum well layer 105b and the second multi-quantum well layer 105h. The opening H of the dielectric layer 109 exposes the connecting part of the n-type semiconductor layer 105c.

[0193] The first dielectric layer 105g surrounds the side surfaces of the first multi-quantum well layer 105b and the side surfaces of the portion of the n-type semiconductor layer 105c adjacent to the first multi-quantum well layer 105b. The second dielectric layer 105k surrounds the side surfaces of the second multi-quantum well layer 105h and the side surfaces of the portion of the n-type semiconductor layer 105c adjacent to the second multi-quantum well layer 105h.

[0194] Adopting the structural design of the above-mentioned nanocolumn LED device 105, referring to Figure 10, the first electrode 106 and the second electrode 107 respectively cover the two ends of the nanocolumn LED device 105. When the length extension direction L of the nanocolumn LED device 105 is along the first direction X1, the first dielectric layer 105g can separate the first electrode 106 from the first multi-quantum well layer 105b, and the first dielectric layer 105g can separate the first electrode 106 from the n-type semiconductor layer 105c, thereby avoiding the first electrode 106 from contacting the first multi-quantum well layer 105b and the n-type semiconductor layer 105c to cause a short circuit problem.

[0195] The second dielectric layer 105k can separate the second electrode 107 from the second multi-quantum well layer 105h, and the second dielectric layer 105k can separate the second electrode 107 from the n-type semiconductor layer 105c, thereby preventing the second electrode 107 from contacting the second multi-quantum well layer 105h and the n-type semiconductor layer 105c and causing a short circuit.

[0196] Similarly, when the length extension direction L of the nanocolumn LED device 105 is along the second direction X2, the first dielectric layer 105g can separate the second electrode 107 from the first multi-quantum well layer 105b, and the first dielectric layer 105g can separate the second electrode 107 from the n-type semiconductor layer 105c, thereby preventing the second electrode 107 from contacting the first multi-quantum well layer 105b and the n-type semiconductor layer 105c and causing a short circuit problem.

[0197] The second dielectric layer 105k can separate the first electrode 106 from the second multi-quantum well layer 105h, and the second dielectric layer 105k can separate the first electrode 106 from the n-type semiconductor layer 105c, thereby preventing the first electrode 106 from contacting the second multi-quantum well layer 105h and the n-type semiconductor layer 105c and causing a short circuit.

[0198] Some embodiments of the present application further provide a method for preparing the nano-column LED device 105 shown in FIG. 11 . FIG. 12A to FIG. 12H are diagrams showing the steps of preparing the nano-column LED device according to some embodiments.

[0199] The above preparation method includes the following S30 to S35:

[0200] S30: As shown in FIG12A , a stacked structure F is formed on the first substrate K1 . The stacked structure F includes an insulating film d, an n-type semiconductor film c, a multi-quantum well film b, and a p-type semiconductor film a stacked in sequence.

[0201] Exemplarily, the stacked structure F further includes a contact film f, which is located on a side of the p-type semiconductor film a away from the multi-quantum well film b.

[0202] Illustratively, the thickness of the insulating film d ranges from 1 μm to 3 μm, the thickness of the n-type semiconductor film c ranges from 3 μm to 4 μm, the thickness of the multi-quantum well film b ranges from 0.05 μm to 0.2 μm, and the thickness of the p-type semiconductor film a ranges from 0.05 μm to 0.5 μm.

[0203] S31: As shown in FIG12B , the stacked structure F is turned upside down and transferred to the second substrate K2.

[0204] For example, the stacked structure F and the first substrate K1 can be inverted onto the second substrate K2. The contact film f at the bottom of the stacked structure F can be connected to the second substrate K2 via an adhesive material to ensure the connection strength between the stacked structure F and the second substrate K2. Then, the first substrate K1 is removed to expose the insulating film d at the top of the stacked structure F.

[0205] S32: As shown in FIG. 12B and FIG. 12C , the insulating film d on the top of the stacked structure F is removed to obtain the structure to be bonded B1 .

[0206] For example, a dry etching process may be used to etch away the insulating film d on the top of the stacked structure F to expose the n-type semiconductor film c, thereby obtaining the structure to be bonded B1.

[0207] S33: As shown in FIG12D , the two structures to be bonded B1 are bonded, and the n-type semiconductor films c of the two structures to be bonded B1 are adhered to form a bonding structure B2.

[0208] For example, as shown in FIG12D , an adhesive material, such as gold, may be formed on the surfaces of the n-type semiconductor films c of the two structures B1 to be bonded. A friction bonding process is then employed to rub the surfaces of the two structures B1 against each other, causing the adhesive material to diffuse into the n-type semiconductor films c of the two structures B1 to be bonded, thereby bonding the n-type semiconductor films c of the two structures B1 to be bonded to form a bonded structure B2.

[0209] Alternatively, the surfaces of the n-type semiconductor films c of the two structures B1 to be bonded are treated, for example, by bombarding the surfaces of the n-type semiconductor films c with ions to form dangling bonds, which may be chemical bonds without electrons capable of pairing. The surfaces of the two structures B1 to be bonded are then aligned, bonding the n-type semiconductor films c of the two structures B1 to be bonded to form a bonded structure B2.

[0210] S34: As shown in FIG12E , the second substrate K2 located on top of the bonding structure B2 is removed.

[0211] S35 : As shown in FIG. 12F and FIG. 12G , the bonding structure B2 is etched to form a nanocolumn LED device 105 .

[0212] Exemplarily, as shown in FIG12F , a mask layer G is formed on top of the bonding structure B2 , where the mask layer G includes a plurality of circular patterns.

[0213] As shown in FIG. 12F and FIG. 12G , the bonding structure B2 is etched through the mask layer G to form a plurality of nano-column LED devices 105 .

[0214] In some embodiments, after S35, the preparation method further includes the following S36:

[0215] S36: As shown in FIG12H , a first dielectric layer 105g and a second dielectric layer 105k are formed. The first dielectric layer 105g surrounds the side surfaces of the first multi-quantum well layer 105b and the side surfaces of the portion of the n-type semiconductor layer 105c adjacent to the first multi-quantum well layer 105b. The second dielectric layer 105k surrounds the side surfaces of the second multi-quantum well layer 105h and the side surfaces of the portion of the n-type semiconductor layer 105c adjacent to the second multi-quantum well layer 105h.

[0216] Some embodiments of the present application further provide another method for preparing a light-emitting substrate. FIG. 13A to FIG. 13D are diagrams showing the steps of preparing another light-emitting substrate according to some embodiments.

[0217] The above preparation method includes the following S40 to S43:

[0218] S40 : As shown in FIG. 13A , the nanorod LED device 105 shown in FIG. 11 is provided, and the nanorod LED device 105 is placed on the substrate 101 , with the length extension direction L of the nanorod LED device 105 being parallel to the substrate 101 .

[0219] It should be noted that an alignment electric field can be generated between the first alignment electrode 102 and the second alignment electrode 103 , and the multiple nanocolumn LED devices 105 rotate under the drive of the alignment electric field until the length extension direction L of the multiple nanocolumn LED devices 105 is along the first direction X1 or along the second direction X2.

[0220] S41 : As shown in FIG. 13B , a first electrode 106 and a second electrode 107 are formed. The first electrode 106 and the second electrode 107 cover two ends of the nanorod LED device 105 , respectively.

[0221] S42 : As shown in FIG. 13C , a dielectric layer 109 is formed. The dielectric layer 109 has an opening H exposing the n-type semiconductor layer 105 c of the nanorod LED device 105 .

[0222] S43 : As shown in FIG. 13D , a third electrode 108 is formed. The third electrode 108 is located between the first electrode 106 and the second electrode 107 , and the third electrode 108 passes through the opening H of the dielectric layer 109 and is connected to the n-type semiconductor layer 105 c .

[0223] Some embodiments of the present application further provide a backlight module. FIG14 is a structural diagram of a backlight module according to some embodiments.

[0224] 14 , the backlight module 200 includes the light emitting substrate 100 provided in any of the above embodiments, and a plurality of optical films 201 . The plurality of optical films 201 are disposed on the light emitting side C1 of the light emitting substrate 100 to adjust the light emitted by the light emitting substrate 100 .

[0225] Some embodiments of the present application further provide a display device. FIG15 is a structural diagram of a display device according to some embodiments.

[0226] 15 , a display device 300 includes the backlight module 200 provided in the above embodiment, and a display panel 301 disposed on the light-emitting side C2 of the backlight module 200 .

[0227] Exemplarily, the display panel 301 may be a liquid crystal display (LCD) panel. In this case, the display device 300 is a liquid crystal display device.

[0228] The display device 300 can be any device that displays images, whether in motion (e.g., video) or stationary (e.g., still images), and whether textual or graphic. More specifically, it is contemplated that the embodiments described may be implemented in or associated with a variety of electronic devices, such as, but not limited to, mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, automotive displays (e.g., speedometer displays, etc.), navigation systems, cockpit controls and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), and the like.

[0229] The backlight module 200 and the display device 300 provided in the above embodiments of the present application include the light-emitting substrate 100 provided in any of the above embodiments. The beneficial effects that can be achieved can refer to the beneficial effects of the light-emitting substrate 100 above, which will not be repeated here.

[0230] Some embodiments of the present application further provide a display panel. FIG16 is a structural diagram of a display panel according to some embodiments.

[0231] 16 , the display panel 400 includes the light-emitting substrate 100 provided in any of the above embodiments, and a color filter layer 401 arranged on the light-emitting side C3 of the light-emitting substrate 100. The color filter layer 401 can filter the light emitted by the light-emitting substrate 100 to obtain primary colors such as red light, green light, blue light or white light, which can then be used to display the picture of the display panel 400.

[0232] Exemplarily, the display panel 400 further includes a substrate 402 on which a color filter layer 401 is disposed. The color filter layer 401 and the substrate 402 constitute a color filter substrate. The color filter substrate is disposed on the light-emitting side C3 of the light-emitting substrate 100, with the color filter layer 401 located between the light-emitting substrate 100 and the substrate 402.

[0233] Some embodiments of the present application also provide a display device, which can be any device that displays an image, whether in motion (e.g., video) or fixed (e.g., still image), and whether text or. More specifically, it is contemplated that the embodiments may be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigation systems, cockpit controls and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0234] Taking a mobile phone as an example, FIG17 is a structural diagram of another display device according to some embodiments.

[0235] 17 , the display device 500 primarily includes a cover plate 501, a display panel 400, a midframe 502, and a rear housing 503. The rear housing 503 and the display panel 400 are located on either side of the midframe 502, respectively. The midframe 502 and the display panel 400 are disposed within the rear housing 503. The cover plate 501 is disposed on a side of the display panel 400 away from the midframe 502, with the display surface of the display panel 400 facing the cover plate 501.

[0236] The middle frame 502 includes a carrier plate 5021 and a frame 5022 surrounding the carrier plate 5021. The display device 500 also includes a circuit board 504, a battery, a camera, and other electronic components disposed on the carrier plate 5021. The display panel 400 is electrically connected to the circuit board 504. For example, the display panel 400 includes a flexible printed circuit (FPC) 403 bonded thereto, and the display panel 400 can be bonded to the circuit board 504 via the flexible printed circuit 403.

[0237] The display panel 400 and the display device 500 provided in the above embodiments of the present application include the light-emitting substrate 100 provided in any of the above embodiments. The beneficial effects that can be achieved can refer to the beneficial effects of the light-emitting substrate 100 above, which will not be repeated here.

[0238] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in this application should be included within the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A light-emitting substrate, characterized in that: include: substrate; A nanocolumn LED device is arranged on the substrate, wherein the length extension direction of the nanocolumn LED device is parallel to the substrate; the nanocolumn LED device comprises a first p-type semiconductor layer, a first multi-quantum well layer and an n-type semiconductor layer arranged along the length extension direction; a first electrode, a second electrode and a third electrode, wherein the third electrode is located between the first electrode and the second electrode; the n-type semiconductor layer is connected to the third electrode, and when the length of the nanocolumn LED device extends along a first direction, the first p-type semiconductor layer is connected to the first electrode; When the length of the nanocolumn LED device extends in the second direction, the first p-type semiconductor layer is connected to the second electrode; The first direction and the second direction are opposite to each other, and the first direction and the second direction are parallel to the arrangement direction of the first electrode, the second electrode and the third electrode.

2. The light-emitting substrate according to claim 1, characterized in that: The nanocolumn LED device further comprises an insulating layer located on a side of the n-type semiconductor layer away from the first multi-quantum well layer; When the length of the nanocolumn LED device extends in a first direction, the insulating layer is connected to the second electrode; When the length of the nanocolumn LED device extends along the second direction, the insulating layer is connected to the first electrode.

3. The light-emitting substrate according to claim 2, characterized in that: The material of the insulating layer includes intrinsic gallium nitride.

4. The light-emitting substrate according to claim 2 or 3, characterized in that: The nano-column LED device further includes a high resistance layer located between the n-type semiconductor layer and the insulating layer.

5. The light-emitting substrate according to claim 4, characterized in that: The material of the high resistance layer includes aluminum gallium nitride.

6. The light-emitting substrate according to claim 1, characterized in that: The nanocolumn LED device further comprises a second p-type semiconductor layer and a second multi-quantum well layer, which are located on a side of the n-type semiconductor layer away from the first multi-quantum well layer; the second multi-quantum well layer is located between the second p-type semiconductor layer and the n-type semiconductor layer; When the length of the nanocolumn LED device extends in a first direction, the second p-type semiconductor layer is connected to the second electrode; When the length of the nanocolumn LED device extends in a second direction, the second p-type semiconductor layer is connected to the first electrode.

7. The light-emitting substrate according to claim 6, characterized in that: The nanocolumn LED device has a central symmetrical structure.

8. The light-emitting substrate according to claim 6 or 7, characterized in that: The n-type semiconductor layer includes two sub-layers, and the two sub-layers are connected by an adhesive layer.

9. The light emitting substrate according to any one of claims 1 to 8, characterized in that The nanocolumn LED device further comprises a first contact layer, which is located on a side of the first p-type semiconductor layer away from the first multi-quantum well layer; the first p-type semiconductor layer is connected to the first electrode or the second electrode through the first contact layer; When the nanocolumn LED device further includes a second p-type semiconductor layer and a second multi-quantum well layer, the nanocolumn LED device further includes a second contact layer located on a side of the second p-type semiconductor layer away from the second multi-quantum well layer; the second p-type semiconductor layer is connected to the second electrode or the first electrode through the second contact layer.

10. The light emitting substrate according to any one of claims 1 to 9, characterized in that: The first electrode and the second electrode cover two ends of the nanocolumn LED device respectively; The nanocolumn LED device further includes a first dielectric layer, the first dielectric layer surrounds a side surface of the first multi-quantum well layer and surrounds a side surface of a portion of the n-type semiconductor layer close to the first multi-quantum well layer; The first dielectric layer separates the first electrode from the first multi-quantum well layer, and separates the first electrode from the n-type semiconductor layer; or, the first dielectric layer separates the second electrode from the first multi-quantum well layer, and separates the second electrode from the n-type semiconductor layer; In the case where the nano-column LED device further includes a second p-type semiconductor layer and a second multi-quantum well layer, the nano-column LED device further includes a second dielectric layer, the second dielectric layer surrounds the side surface of the second multi-quantum well layer and surrounds the side surface of a portion of the n-type semiconductor layer close to the second multi-quantum well layer; The second dielectric layer separates the second electrode from the second multi-quantum well layer, and separates the second electrode from the n-type semiconductor layer; or the second dielectric layer separates the first electrode from the second multi-quantum well layer, and separates the first electrode from the n-type semiconductor layer.

11. The light emitting substrate according to any one of claims 1 to 10, characterized in that: The light-emitting substrate further comprises: The third dielectric layer separates the third electrode from the first electrode and separates the third electrode from the second electrode; the third dielectric layer has an opening, the opening exposes a portion of the n-type semiconductor layer away from the first multi-quantum well layer; the third electrode passes through the opening and is connected to the n-type semiconductor layer.

12. The light emitting substrate according to claim 11, characterized in that: A midline of the opening perpendicular to a length extension direction of the nanocolumn LED device coincides with a midline of the nanocolumn LED device perpendicular to the length extension direction.

13. The light emitting substrate according to any one of claims 1 to 12, characterized in that: Along the length extension direction of the nano-column LED device, the lengths of the portions of the first electrode and the second electrode covering the nano-column LED device are equal.

14. The light emitting substrate according to any one of claims 1 to 13, characterized in that: A material of at least one of the first electrode, the second electrode, and the third electrode includes a light-transmitting material.

15. The light emitting substrate according to any one of claims 1 to 14, characterized in that: A material of at least one of the first electrode, the second electrode, and the third electrode includes at least one of indium tin oxide, zinc tin oxide, and graphene.

16. The light emitting substrate according to any one of claims 1 to 15, characterized in that: The light-emitting substrate comprises a plurality of the nanocolumn LED devices sequentially arranged along a third direction, wherein the third direction is perpendicular to a length extension direction of the nanocolumn LED devices; The first electrode, the second electrode and the third electrode extend along the third direction; the first electrode covers the ends of the plurality of nanocolumn LED devices on one side of the third electrode, the second electrode covers the ends of the plurality of nanocolumn LED devices on the other side of the third electrode, and the third electrode covers the middle parts of the plurality of nanocolumn LED devices.

17. The light emitting substrate according to any one of claims 1 to 16, characterized in that: The light-emitting substrate further comprises: A first alignment electrode and a second alignment electrode are disposed on the substrate and arranged along the length extension direction of the nanocolumn LED device; in an orthographic projection onto the substrate, the nanocolumn LED device is located between the first alignment electrode and the second alignment electrode; The fourth dielectric layer covers the first alignment electrode and the second alignment electrode and is located between the substrate and the nanocolumn LED device.

18. A nanorod LED device, characterized in that: include: An insulating layer, an n-type semiconductor layer, a multi-quantum well layer and a p-type semiconductor layer are arranged in sequence.

19. The nanorod LED device according to claim 18, characterized in that: The nano-column LED device further includes a high resistance layer located between the n-type semiconductor layer and the insulating layer.

20. The nanorod LED device according to claim 18 or 19, characterized in that: The nano-column LED device further includes a contact layer located on a side of the p-type semiconductor layer away from the multi-quantum well layer.

21. The nanorod LED device according to any one of claims 18 to 20, characterized in that: The nano-column LED device further includes a first dielectric layer, which surrounds a side surface of the multi-quantum well layer and a side surface of a portion of the n-type semiconductor layer close to the multi-quantum well layer.

22. A method for preparing a nanorod LED device, characterized in that: include: forming a stacked structure on a first substrate, the stacked structure comprising an insulating film, an n-type semiconductor film, a multi-quantum well film and a p-type semiconductor film stacked in sequence; The stacked structure is etched to form a nanocolumn LED device.

23. A nanorod LED device, characterized in that: include: A first p-type semiconductor layer, a first multi-quantum well layer, an n-type semiconductor layer, a second multi-quantum well layer and a second p-type semiconductor layer are sequentially arranged.

24. The nanorod LED device according to claim 23, characterized in that: The nanocolumn LED device has a central symmetrical structure.

25. The nanorod LED device according to claim 23 or 24, characterized in that: The n-type semiconductor layer includes two sub-layers, and the two sub-layers are connected by an adhesive layer.

26. The nanorod LED device according to any one of claims 23 to 25, characterized in that: The nanocolumn LED device further includes a first contact layer and a second contact layer; The first contact layer is located on a side of the first p-type semiconductor layer away from the first multi-quantum well layer; The second contact layer is located on a side of the second p-type semiconductor layer away from the second multi-quantum well layer.

27. The nanorod LED device according to any one of claims 23 to 26, characterized in that: The nanocolumn LED device further includes a first dielectric layer and a second dielectric layer; The first dielectric layer surrounds a side surface of the first multi-quantum well layer, and surrounds a side surface of a portion of the n-type semiconductor layer close to the first multi-quantum well layer; The second dielectric layer surrounds a side surface of the second multi-quantum well layer and surrounds a side surface of a portion of the n-type semiconductor layer close to the second multi-quantum well layer.

28. A method for preparing a nanorod LED device, characterized in that: include: forming a stacked structure on a first substrate, the stacked structure comprising an insulating film, an n-type semiconductor film, a multi-quantum well film and a p-type semiconductor film stacked in sequence; Inverting and transferring the stacked structure onto a second substrate; Removing the insulating film located on the top of the stacked structure to obtain a structure to be bonded; Bonding the two structures to be bonded, adhering the n-type semiconductor films of the two structures to be bonded to form a bonding structure; removing the second substrate located on top of the bonding structure; The bonding structure is etched to form a nanocolumn LED device.

29. A method for preparing a light-emitting substrate, characterized in that: include: Placing a nanocolumn LED device on a substrate, wherein the length extension direction of the nanocolumn LED device is parallel to the substrate, and the nanocolumn LED device is the nanocolumn LED device according to claims 18 to 21 or claims 23 to 27; forming a first electrode and a second electrode, wherein the first electrode and the second electrode respectively cover two ends of the nanocolumn LED device; forming a third dielectric layer, wherein the third dielectric layer has an opening exposing the n-type semiconductor layer of the nanocolumn LED device; A third electrode is formed, wherein the third electrode is located between the first electrode and the second electrode, and the third electrode passes through the opening and is connected to the n-type semiconductor layer.

30. A backlight module, characterized in that: include: The light-emitting substrate according to any one of claims 1 to 17; A plurality of optical films are arranged on the light emitting side of the light emitting substrate.

31. A display device, characterized in that: include: The backlight module as claimed in claim 30; The display panel is arranged on the light emitting side of the backlight module.

32. A display panel, characterized in that: include: The light-emitting substrate according to any one of claims 1 to 17; The color filter layer is arranged on the light emitting side of the light emitting substrate.

33. A display device, characterized in that: include: The display panel as claimed in claim 32; A circuit board is electrically connected to the display panel.

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