Vaporizer for substrate processing device and substrate processing device

Abstract

The present invention relates to a vaporizer for a substrate processing device and a substrate processing device, wherein the vaporizer for a substrate processing device comprises: a first inlet into which a liquid or solid precursor and a first carrier gas are supplied; a diffusion unit including a diffusion space wider than the first inlet and diffusing the precursor within the diffusion space; a second inlet connected to the diffusion unit and supplied with a second carrier gas that assists the diffusion of the precursor; and a vaporization unit communicating with the diffusion unit and vaporizing the diffused precursor.

Description

Vaporizer and substrate processing device for substrate processing device

[0001] The present invention relates to a substrate processing device that performs a processing process on a substrate, such as a deposition process or an etching process.

[0002] In general, in order to manufacture semiconductor devices, display devices, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes are performed, such as a deposition process that deposits a thin film of a specific material on the substrate, a photo process that selectively exposes the thin film using a photosensitive material, and an etching process that removes the thin film in the selectively exposed portion to form a pattern. These substrate processing processes can be performed using a substrate processing device.

[0003] A substrate processing device according to the prior art includes a substrate processing unit that performs a processing process on a substrate, and a supply unit that supplies a source gas to the substrate processing unit. The supply unit includes a vaporizer that vaporizes a precursor. The supply unit vaporizes the precursor using the vaporizer to generate a source gas, and then supplies the source gas to the substrate processing unit. The substrate processing unit performs the processing process using the source gas supplied from the supply unit.

[0004] In a conventional substrate processing device, the vaporizer vaporizes the precursor by simultaneously mixing it with a vaporization-assisted carrier gas and providing heat energy. Consequently, the heat generated during the precursor vaporization process increases its viscosity, leading to blockages and a problem in that the source gas cannot be supplied smoothly. This problem is further exacerbated when using a high-viscosity precursor.

[0005] The present invention has been devised to solve the above-described problems, and provides a vaporization device and a substrate processing device for a substrate processing device that can prevent clogging due to an increase in viscosity during the process of vaporizing a precursor.

[0006] In order to solve the above-described problem, the present invention may include the following configuration.

[0007] A vaporization device for a substrate processing device according to the present invention is for vaporizing a liquid or solid precursor onto a substrate and supplying it as a gas, and may include: a first inlet through which the precursor and a first carrier gas are supplied; a diffusion unit having a diffusion space wider than the first inlet and diffusing the precursor within the diffusion space; a second inlet unit connected to the diffusion unit and through which a second carrier gas that assists diffusion of the precursor is supplied; and a vaporization unit communicating with the diffusion unit and vaporizing the diffused precursor.

[0008] In the vaporization device for a substrate processing device according to the present invention, the diffusion unit may include a cooling unit for cooling the diffusion space.

[0009] In the vaporization device for a substrate processing device according to the present invention, the diffusion unit can be controlled to a first temperature. The vaporization unit can be controlled to a second temperature. The first temperature can be lower than the second temperature.

[0010] A substrate processing device according to the present invention may include a supply unit that supplies a source gas; and a substrate processing unit that performs a processing process on a substrate using the source gas supplied from the supply unit. The supply unit may include a first inlet unit into which a precursor and a first carrier gas are supplied; a diffusion unit that includes a diffusion space wider than the first inlet unit and diffuses the precursor within the diffusion space; a second inlet unit that is connected to the diffusion unit and into which a second carrier gas that assists diffusion of the precursor is supplied; and a vaporization unit that is in communication with the diffusion unit and vaporizes the diffused precursor.

[0011] In the substrate processing device according to the present invention, the diffusion unit may include a cooling unit for cooling the diffusion space.

[0012] In the substrate processing device according to the present invention, the diffusion unit can be controlled to a first temperature. The vaporization unit can be controlled to a second temperature. The first temperature can be lower than the second temperature.

[0013] According to the present invention, the following effects can be achieved.

[0014] The present invention can prevent clogging caused by an increase in viscosity during the precursor vaporization process. Accordingly, the present invention can improve the stability of precursor vaporization and source gas supply.

[0015] The present invention prevents clogging even when a source gas is generated by vaporizing a high-viscosity precursor, thereby enabling a processing process to be performed using a high-viscosity precursor. Accordingly, the present invention can improve the quality of substrates on which the processing process has been performed.

[0016] The present invention prevents clogging even when vaporizing a high-viscosity precursor to generate a source gas. This not only extends maintenance cycles due to clogging but also reduces maintenance costs. Consequently, the present invention can reduce processing costs for the processing process, thereby contributing to lowering the manufacturing cost of substrates subjected to the processing. Furthermore, the present invention can increase the productivity of substrates subjected to the processing process by increasing operating rates.

[0017] The present invention can prevent clogging even when generating the source gas using a high-viscosity precursor, thereby increasing the amount of source gas generated by increasing the flow rate of the precursor supplied to the vaporization unit. Accordingly, the present invention can increase the flow rate of the source gas supplied to the substrate processing unit, thereby further improving the quality of the substrate on which the processing has been performed. In addition, the present invention can shorten the time required for the processing process, thereby further increasing the productivity of the substrate on which the processing has been performed.

[0018] Figure 1 is a schematic diagram of a substrate processing device according to the present invention.

[0019] Figure 2 is a schematic side cross-sectional view of a vaporization device for a substrate processing device according to the present invention.

[0020] Figure 3 is a schematic side cross-sectional view showing the first inlet and the second inlet in the substrate processing device according to the present invention in an enlarged manner.

[0021] Figure 4 is a schematic side cross-sectional view of the injection unit in the substrate processing device according to the present invention.

[0022] Figure 5 is a schematic cross-sectional view of a modified embodiment of the injection unit in the substrate processing device according to the present invention.

[0023] Hereinafter, an embodiment of a substrate processing device according to the present invention will be described in detail with reference to the attached drawings. Since a vaporization device for a substrate processing device according to the present invention can be included in the substrate processing device according to the present invention, it will be described together with the embodiment of the substrate processing device according to the present invention.

[0024] Referring to Fig. 1, a substrate processing device (1) according to the present invention performs a processing process on a substrate (S). The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, etc. The substrate processing device (1) according to the present invention can perform processing processes such as a deposition process for depositing a thin film on the substrate (S), an etching process for removing a portion of the thin film deposited on the substrate (S), etc. Hereinafter, an embodiment in which the substrate processing device (1) according to the present invention performs the deposition process will be described, but it will be apparent to those skilled in the art to which the present invention pertains to derive an embodiment in which the substrate processing device (1) according to the present invention performs other processing processes, such as the etching process, therefrom.

[0025] The substrate processing device (1) according to the present invention may include a supply unit (2) that supplies gas, and a substrate processing unit (7) that performs the processing process using the gas supplied from the supply unit (2).

[0026] Referring to FIGS. 1 and 2, the supply unit (2) supplies gas to the substrate processing unit (7). The supply unit (2) can be connected to the substrate processing unit (7) via a pipe, a hose, a hole in a gas block, etc. The supply unit (2) can be placed outside the substrate processing unit (7).

[0027] The above supply unit (2) can supply source gas to the substrate processing unit (7). In this case, the supply unit (2) can include a diffusion unit (3), a vaporization unit (4), and an inlet unit (5). The diffusion unit (3), the vaporization unit (4), and the inlet unit (5) can be implemented as a vaporization device for a substrate processing device according to the present invention.

[0028] The above supply unit (2) vaporizes a liquid or solid precursor and supplies it as a gas onto the substrate (S). The supply unit (2) can generate the source gas by vaporizing the liquid or solid precursor. The precursor contains a source material and can be in a liquid or solid state. The supply unit (2) can generate the source gas by vaporizing a liquid or solid precursor and then supply the gaseous source gas to the substrate processing unit (7).

[0029] Referring to FIGS. 1 and 2, the diffusion unit (3) is where the precursor supplied from the inlet unit (5) is diffused. The diffusion unit (3) can be connected to the inlet unit (5). The inlet unit (5) can supply the precursor and the first carrier gas, and in this case, the diffusion unit (3) can diffuse the precursor and the first carrier gas supplied from the inlet unit (5). The first carrier gas is for transporting the precursor and may include, for example, an inert gas. The inlet unit (5) can supply the precursor and the first carrier gas together to the diffusion unit (3) and supply a second carrier gas to the diffusion unit (3). In this case, the diffusion unit (3) can diffuse the precursor, the first carrier gas, and the second carrier gas supplied from the inlet unit (5). The second carrier gas assists the diffusion of the precursor. The second carrier gas may assist the diffusion of the precursor and may also assist the flow of the source gas. The second carrier gas may include an inert gas. For example, the second carrier gas may be argon (Ar). In the diffusion unit (3), the precursor and the second carrier gas may be mixed while diffusing. The second carrier gas may also be a vaporization assist gas that assists the vaporization of the precursor.

[0030] In the diffusion section (3), the precursor and the second carrier gas can be diffused at a lower temperature than in the vaporization section (4). For example, the precursor and the second carrier gas can be generated as the source gas by being vaporized by heat energy in the vaporization section (4) at a second temperature after being diffused in the diffusion section (3) at a first temperature. In this case, the first temperature can be lower than the second temperature. The diffusion section (3) can be controlled to the first temperature. The vaporization section can be controlled to the second temperature.

[0031] In this way, the substrate processing device (1) according to the present invention is implemented so that the precursor and the second carrier gas are diffused at a relatively low temperature in the diffusion unit (3) and then vaporized at a relatively high temperature in the vaporization unit (4), thereby generating the source gas. That is, the substrate processing device (1) according to the present invention is implemented so that the diffusion of the precursor and vaporization by thermal energy are sequentially performed in separate spaces. Accordingly, the substrate processing device (1) according to the present invention can reduce the increase in viscosity that occurs in the process of vaporizing the precursor, and thus can prevent clogging from occurring due to the increase in viscosity. Accordingly, the substrate processing device (1) according to the present invention is implemented so that the vaporization of the precursor and the supply of the source gas are smoothly performed. Accordingly, the substrate processing device (1) according to the present invention can achieve the following effects.

[0032] First, since the substrate processing device (1) according to the present invention can prevent clogging from occurring even when the source gas is generated by vaporizing a high-viscosity precursor, it is possible to perform the processing process using a high-viscosity precursor. Accordingly, the substrate processing device (1) according to the present invention can improve the quality of the substrate (S) on which the processing process is performed. For example, the substrate processing device (1) according to the present invention can generate the source gas using a high-viscosity precursor higher than 10 CP (Centi Poise), and perform the processing process using the generated source gas.

[0033] Second, since the substrate processing device (1) according to the present invention can prevent clogging even when generating the source gas by vaporizing a high-viscosity precursor, it can not only increase the maintenance cycle due to clogging but also reduce maintenance costs. Accordingly, the substrate processing device (1) according to the present invention can reduce the process cost for the processing process, and thus can contribute to lowering the manufacturing cost of the substrate (S) on which the processing process has been performed. In addition, the substrate processing device (1) according to the present invention can increase the productivity of the substrate (S) on which the processing process has been performed by increasing the operating rate.

[0034] Third, since the substrate processing device (1) according to the present invention can prevent clogging from occurring even when the source gas is generated using a high-viscosity precursor, the amount of the source gas generated can be increased by increasing the flow rate of the precursor supplied to the diffusion unit (3). Accordingly, the substrate processing device (1) according to the present invention can increase the flow rate of the source gas supplied to the substrate processing unit (7), and thus the quality of the substrate (S) on which the processing process has been performed can be further improved. In addition, since the substrate processing device (1) according to the present invention can shorten the time required for the processing process, the productivity of the substrate (S) on which the processing process has been performed can be further increased.

[0035] Referring to FIGS. 1 and 2, the diffusion portion (3) may include a diffusion space (30).

[0036] In the diffusion space (30), diffusion of the precursor can occur. The diffusion space (30) can be formed wider than the first inlet (51) of the inlet (5). The first inlet (51) supplies the precursor and the first carrier gas. Since the diffusion space (30) is formed wider than the first inlet (51), the precursor and the first carrier gas can be widely diffused while being supplied from the first inlet (51) to the diffusion space (30). Accordingly, the precursor can be smoothly mixed with the second carrier gas while being widely diffused in the diffusion space (30).

[0037] Referring to FIGS. 1 and 2, the diffusion unit (3) may include a diffusion body (31).

[0038] The above diffusion body (31) provides the diffusion space (30). The diffusion body (31) can be adjusted to the first temperature. Accordingly, diffusion and mixing of the precursor and the second carrier gas in the diffusion space (30) can be performed at the first temperature. The first temperature may be a temperature range in which the precursor is not vaporized by heat in the diffusion space (30) and the precursor is not condensed. The first temperature may be preset by an operator through a preliminary test, etc. Accordingly, the substrate processing device (1) according to the present invention can reduce an increase in viscosity during the process in which the precursor and the second carrier gas are diffused in the diffusion space (30), thereby preventing clogging from occurring due to an increase in viscosity.

[0039] The above diffusion body (31) may be formed in a cylindrical shape with an empty interior, but is not limited thereto, and may be formed in another shape, such as a rectangular parallelepiped shape with an empty interior, as long as it is a shape that can provide the diffusion space (30) in which the precursor and the second carrier gas can diffuse.

[0040] Referring to FIGS. 1 and 2, the diffusion unit (3) may include a cooling unit (32).

[0041] The cooling unit (32) is coupled to the diffusion body (31). The cooling unit (32) can cool the diffusion space (30). Accordingly, even if heat generated during vaporization by thermal energy in the vaporization unit (4) is transferred to the diffusion unit (3), the cooling unit (32) can prevent vaporization by heat from occurring in the diffusion space (30) by cooling the diffusion space (30). Accordingly, the cooling unit (32) can reduce an increase in viscosity that occurs during the diffusion and mixing of the precursor and the second carrier gas in the diffusion space (30). The cooling unit (32) can maintain the diffusion space (30) at the first temperature by cooling the diffusion space (30).

[0042] The cooling unit (32) may include a heat sink (32a). The heat sink (32a) may be coupled to the outer surface of the diffusion body (31). Accordingly, the heat sink (32a) may cool the diffusion space (30) by dissipating heat (Heat) generated in the diffusion unit (3) and heat (Heat) transferred from the vaporization unit (4). The heat sink (32a) may have an air cooling path applied thereto. The heat sink (32a) may be coupled to the entire outer surface of the diffusion body (31). Accordingly, the heat sink (32a) may prevent the precursor located in the diffusion space (30) from being vaporized by heat before reaching the vaporization unit (4).

[0043] Referring to FIGS. 1 and 2, the vaporization unit (4) vaporizes the precursor using thermal energy. The vaporization unit (4) may be communicated with the diffusion unit (3). Accordingly, the pre-sucker diffused in the diffusion unit (3) may be supplied to the vaporization unit (4) and vaporized by thermal energy. In the vaporization unit (4), vaporization by heat may occur at a higher temperature than in the diffusion unit (3). For example, the precursor and the second carrier gas may be vaporized by thermal energy in the vaporization unit (4) at the second temperature after being diffused in the diffusion unit (3) at the first temperature, thereby generating the source gas. In this case, the second temperature may be higher than the first temperature.

[0044] In this way, the substrate processing device (1) according to the present invention can be implemented so that after diffusion of the precursor occurs in the diffusion unit (3), vaporization of the precursor by heat energy occurs in the vaporization unit (4). Therefore, the substrate processing device (1) according to the present invention can reduce the increase in viscosity that occurs in the process of vaporizing the precursor, and thus can prevent clogging from occurring due to the increase in viscosity. Accordingly, the substrate processing device (1) according to the present invention is implemented so that vaporization of the precursor and supply of the source gas occur smoothly.

[0045] The above vaporization unit (4) may include a vaporization body (41) and a heating unit (42).

[0046] The above vaporization body (41) provides a vaporization space (40). In the vaporization space (40), vaporization of the precursor can occur by heat energy. Through vaporization of the precursor, the source gas can be generated in the vaporization space (40). Vaporization of the precursor can occur when the vaporization space (40) is at the second temperature. The second temperature may be a temperature range in which vaporization of the precursor by heat occurs in the vaporization space (40). The second temperature may be preset by an operator through prior testing, etc.

[0047] The above vaporization body (41) may be coupled to the diffusion body (31). In this case, the vaporization space (40) and the diffusion space (30) may be connected to each other in a communicative manner. The vaporization body (41) and the diffusion body (31) may be formed integrally. The vaporization body (41) may be formed in a cylindrical shape with an empty interior, but is not limited thereto, and may be formed in another shape, such as a rectangular parallelepiped shape with an empty interior, as long as it can provide the vaporization space (40) where the vaporization of the pre-sucker takes place.

[0048] The heating unit (42) is coupled to the vaporization body (41). The heating unit (42) can heat the vaporization space (40). Accordingly, the heating unit (42) can heat the vaporization space (40) to provide thermal energy, thereby allowing the precursor to be vaporized by heat in the vaporization space (40). The heating unit (42) can maintain the vaporization space (40) at the second temperature by heating the vaporization space (40).

[0049] The above heating unit (42) may include a first heater (322a).

[0050] The first heater (322a) is disposed on the side wall of the vaporization body (41). The first heater (322a) can heat the vaporization space (40) by emitting heat from the side wall of the vaporization body (41). The first heater (322a) can be disposed to surround the vaporization space (40). Accordingly, the first heater (322a) is implemented to radiate uniform heat throughout the vaporization space (40), thereby heating the vaporization space (40) to a uniform temperature throughout. The first heater (322a) can also be disposed to be embedded in the side wall of the vaporization body (41). The first heater (322a) can heat the vaporization space (40) through heat generation using electricity, emission of heating light, circulation of a heating medium, etc.

[0051] The second heater (322b) is disposed in the vaporization space (40) inside the vaporization body (41). The second heater (322b) can heat the vaporization space (40) by emitting heat from the vaporization space (40). Accordingly, the vaporization space (40) can be heated by the first heater (322a) disposed on the outside and the second heater (322b) disposed on the inside. Accordingly, the heating unit (42) can improve the uniformity of the temperature of the vaporization space (40), thereby improving the quality of the source gas vaporized by heat energy. The second heater (322b) can heat the vaporization space (40) by using electricity to generate heat, emitting heating light, circulating a heating medium, etc.

[0052] The second heater (322b) may be arranged at the center of the vaporization space (40). Accordingly, the second heater (322b) may be arranged to uniformly radiate heat throughout the vaporization space (40). For example, when the vaporization space (40) is formed in an overall cylindrical shape, the second heater (322b) may be arranged on an imaginary line connecting the centers of circles forming the bottom and top surfaces of the cylinder. The second heater (322b) may have one side coupled to the bottom surface of the vaporization body (41) and the other side disposed at a position spaced apart from the bottom surface of the vaporization body (41). The other side of the second heater (322b) may be disposed at a position spaced apart from the top surface of the vaporization body (41). The top surface of the vaporization body (41) may be a portion connected to the diffusion body (31). Accordingly, the vaporization body (41) can be positioned so as not to obstruct the inflow of the diffused precursor from the diffusion body (31). The other side of the second heater (322b) can be positioned at a shorter distance from the upper surface of the vaporization body (41) than from the bottom surface of the vaporization body (41a).

[0053] The above supply unit (2) may include a discharge unit (10). The discharge unit (10) may be coupled to the vaporization body (41). One side of the discharge unit (10) may be connected to the vaporization space (40). The other side of the discharge unit (10) may be connected to the substrate processing unit (7). Accordingly, the source gas generated by vaporization of the precursor in the vaporization space (40) may be supplied to the substrate processing unit (7) through the discharge unit (10). The other side of the discharge unit (10) may be connected to the substrate processing unit (7) through a pipe, a hose, a hole of a gas block, or the like.

[0054] Referring to FIGS. 1 to 3, the inlet (5) supplies the precursor, the first carrier gas, and the second carrier gas to the diffusion unit (3). The inlet (5) can be coupled to the diffusion unit (3). In the diffusion unit (3), the precursor and the second carrier gas are diffused at a lower temperature than in the vaporization unit (4), thereby reducing the increase in viscosity. Therefore, the inlet (5) can supply a high-viscosity precursor to the diffusion unit (3).

[0055] The above inlet (5) can be coupled to the diffusion body (31) so as to be connected to the diffusion space (30). The diffusion body (31) can be placed between the inlet (5) and the vaporization body (41). When the vaporization body (41) is coupled to the lower part of the diffusion body (31), the inlet (5) can be coupled to the upper part of the diffusion body (31).

[0056] The above inlet (5) may include the first inlet (51) and the second inlet (52).

[0057] The first inlet (51) can supply the precursor and the first carrier gas. The precursor and the first carrier gas can be supplied to the diffusion unit (3) through the first inlet (51). The diffusion unit (3) can include the diffusion space (30) that is wider than the first inlet (51). Accordingly, the substrate processing device (1) according to the present invention can further increase the diffusion power of the precursor in the diffusion unit (3). In this case, the mixing ratio between the precursor and the second carrier gas in the diffusion unit (3) can be increased.

[0058] The first inlet (51) may be connected to a first supply mechanism (21). The first supply mechanism (21) supplies the precursor and the first carrier gas. The first supply mechanism (21) may be connected to the first inlet (51) through a pipe, a hose, a hole in a gas block, or the like. Although not shown, the first supply mechanism (21) may include a first storage tank for storing the precursor, a first pump for supplying the first carrier gas to the first storage tank, a first valve for selectively supplying the precursor, or the like.

[0059] The first inlet (51) can supply a high-viscosity precursor higher than 10 CP to the diffusion unit (3). Even if a high-viscosity precursor higher than 10 CP is supplied by the first inlet (51), the substrate processing device (1) according to the present invention can prevent clogging by reducing the increase in viscosity that occurs during the vaporization process of the precursor, so that the source gas generated using the high-viscosity precursor can be smoothly supplied to the substrate processing device (7). Accordingly, the substrate processing device (1) according to the present invention can smoothly perform the processing process using the high-viscosity precursor, so that not only can the quality of the substrate on which the processing process has been performed be further improved, but also the productivity of the substrate on which the processing process has been performed can be further increased by shortening the time required for the processing process.

[0060] The second inlet (52) can supply the second carrier gas. The second carrier gas can be supplied to the diffusion unit (3) through the second inlet (52). The second inlet (52) can be connected to a second supply mechanism (22). The second supply mechanism (22) supplies the second carrier gas. The second supply mechanism (22) can be connected to the second inlet (52) through a pipe, a hose, a hole in a gas block, or the like. Although not shown, the second supply mechanism (22) can include a second storage tank for storing the second carrier gas, a second pump for supplying the second carrier gas stored in the second storage tank, a second valve for selectively supplying the second carrier gas, or the like.

[0061] The above inlet (5) may include a first nozzle body (53) and a second nozzle body (54).

[0062] The first nozzle body (53) is for supplying the precursor and the first carrier gas to the diffusion section (3). The first nozzle body (53) may include a first supply hole (531). The precursor and the first carrier gas supplied from the first supply mechanism (21) may be supplied to the diffusion space (30) through the first supply hole (531). The first supply hole (531) and the first nozzle body (53) may be included in the first inlet section (51).

[0063] The second nozzle body (54) is disposed outside the first nozzle body (53) and spaced apart from the first nozzle body (53). The second nozzle body (54) may be disposed to surround the first nozzle body (53) at a position spaced apart from the first nozzle body (53). The space created by the second nozzle body (54) and the first nozzle body (53) being disposed to be spaced apart from each other may be implemented as a second supply hole (541). The second carrier gas may be supplied to the diffusion unit (3) through the second supply hole (541). In this case, the second carrier gas may be supplied to the inlet unit (5) from the second supply mechanism (22) and then supplied to the diffusion space (30) through the second supply hole (541). Accordingly, the second carrier gas supplied through the second supply hole (541) and the precursor and the first carrier gas supplied through the first supply hole (531) can be mixed while diffusing in the diffusion space (30). In this case, since the second supply hole (541) and the first supply hole (531) are implemented to be spatially separated from each other, the second carrier gas can be prevented from being mixed with the precursor and the first carrier gas until it is supplied to the diffusion space (30). The second supply hole (541) and the second nozzle body (54) can be included in the second inlet (52).

[0064] Referring to FIGS. 1 and 2, the supply unit (2) may include a flue nozzle (6).

[0065] The above-mentioned communication nozzle (6) is arranged between the diffusion section (3) and the vaporization section (4). The communication nozzle (6) can partition the diffusion space (30) and the vaporization space (40). Accordingly, the diffusion of the precursor and the vaporization of the precursor can be performed in separate spaces. The communication nozzle (6) can be arranged inside the diffusion body (31) and the vaporization body (41). The communication nozzle (6) can be arranged on a joining surface where the diffusion body (31) and the vaporization body (41) are joined to each other.

[0066] The above-mentioned communication nozzle (6) may include a plurality of first communication holes (61), a plurality of second communication holes (62), and a communication space (63).

[0067] The above first communication holes (61) are connected to the diffusion space (30). The above first communication holes (61) may be formed by penetrating the communication body (60). The communication body (60) forms the overall appearance of the communication nozzle (6). The communication body (60) may be arranged inside the diffusion body (31) and the vaporization body (41) to partition the diffusion space (30) and the vaporization space (40). The above first communication holes (61) may be formed by penetrating one surface of the communication body (60) facing the diffusion space (30). The above first communication holes (61) may be arranged to be spaced apart from each other.

[0068] The above second communication holes (62) are connected to the vaporization space (40). The above second communication holes (62) may be formed by penetrating the communication body (60). The above second communication holes (62) may be formed by penetrating the other surface of the communication body (60) facing the vaporization space (40). The above second communication holes (62) may be arranged to be spaced apart from each other.

[0069] The above communication space (63) is arranged between the first communication holes (61) and the second communication holes (62). The communication space (63) may correspond to the internal space of the communication body (60). The communication space (63) may be connected to the diffusion space (30) through the first communication holes (61), and may be connected to the vaporization space (40) through the second communication holes (62). Accordingly, the precursor and the second carrier gas may be first diffused by the diffusion unit (3) and then secondarily diffused by the communication nozzle (6) to be supplied to the vaporization space (40). Accordingly, the communication nozzle (6) may enable the precursor that has been first diffused in the diffusion space (30) to be supplied to the vaporization space (40) without agglomeration. This is because the first diffused precursor is divided into particles with diameters corresponding to the diameters of the first communication holes (61) and the second communication holes (62) as it passes through the communication nozzle (6). The diameters of the first communication holes (61) and the second communication holes (62) can be formed smaller than the diameters of the particles of the first diffused precursor. Therefore, the substrate processing device (1) according to the present invention can further reduce the diameter of the particles of the precursor supplied to the vaporization space (40) by using the communication nozzle (6), thereby enabling the vaporization of the precursor to occur more smoothly in the vaporization space (40).

[0070] Referring to FIGS. 1 to 5, the substrate processing unit (7) performs the processing process using the source gas supplied from the supply unit (2). The substrate processing unit (7) is connected to the vaporization unit (4) and can receive the source gas from the vaporization unit (4). The substrate processing unit (7) can include a chamber (71), a substrate support unit (72), and an injection unit (73).

[0071] The chamber (71) above provides a processing space (70). The processing process can be performed in the processing space (70). The processing space (70) can be arranged inside the chamber (71). An exhaust port (not shown) for exhausting gas from the processing space (70) can be coupled to the chamber (71). The substrate support unit (72) and the injection unit (73) can be arranged inside the chamber (71).

[0072] The substrate support member (72) above supports the substrate (S). The substrate support member (72) may support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported by the substrate support member (72), processing processes for multiple substrates (S) can be performed at once. The substrate support member (72) may be coupled to the chamber (71). The substrate support member (72) may be placed inside the chamber (71).

[0073] The above-described injection unit (73) injects gas toward the substrate support unit (72). The injection unit (73) may be connected to the supply unit (2). In this case, the injection unit (73) may inject gas supplied from the supply unit (2) toward the substrate support unit (72). The injection unit (73) may be disposed inside the chamber (71). The injection unit (73) may be disposed opposite the substrate support unit (72). The injection unit (73) may be disposed above the substrate support unit (72). The processing space (70) may be disposed between the injection unit (73) and the substrate support unit (72). The injection unit (73) may be coupled to a lid (not shown). The lid may be coupled to the chamber (71) so as to cover an upper portion of the chamber (71).

[0074] The above injection unit (73) may include a first gas path (73a) and a second gas path (73b).

[0075] The first gas path (73a) is for injecting gas. One side of the first gas path (73a) may be connected to the supply unit (2) through a pipe, a hose, a hole in a gas block, etc. The other side of the first gas path (73a) may be connected to the processing space (70). Accordingly, the first gas supplied from the supply unit (2) may flow along the first gas path (73a) and then be injected into the processing space (70) through the first gas path (73a). The first gas path (73a) may function as a path for the gas to flow and also as an injection port for injecting the gas into the processing space (70).

[0076] The second gas path (73b) is for injecting the second gas. The second gas and the first gas may be different gases. For example, when the first gas is a source gas, the second gas may be a reactant gas. The second gas path (73b) may have one end connected to the supply unit (2) through a pipe, a hose, a hole in a gas block, or the like. The other end of the second gas path (73b) may be connected to the processing space (70). Accordingly, the second gas supplied from the supply unit (2) may flow along the second gas path (73b) and then be injected into the processing space (70) through the second gas path (73b). The above second gas path (73b) can function as a path for the second gas to flow and as an injection port for injecting the second gas into the processing space (70).

[0077] Meanwhile, when the first gas is the source gas, the first gas path (73a) may be connected to the vaporization unit (4). When the second gas is a reactant gas, the second gas path (73b) may be connected to a third supply mechanism (23) of the supply unit (2). The third supply mechanism (23) may be connected to the second gas path (73b) through a pipe, a hose, a hole of a gas block, or the like. Although not shown, the third supply mechanism (23) may include a third storage tank for storing the reactant gas, a third pump for supplying the reactant gas stored in the third storage tank, a third valve for selectively supplying the reactant gas, or the like.

[0078] The second gas path (73b) and the first gas path (73a) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the supply unit (2) to the second gas path (73b) may be injected into the processing space (70) without passing through the first gas path (73a). The first gas supplied from the supply unit (2) to the first gas path (73a) may be injected into the processing space (70) without passing through the second gas path (73b). The second gas path (73b) and the first gas path (73a) may inject gases toward different parts of the processing space (70).

[0079] For example, as shown in FIG. 2, the injection unit (73) may include a first plate (731) and a second plate (732).

[0080] The first plate (731) is disposed on the upper side of the second plate (732). The first plate (731) and the second plate (732) may be disposed spaced apart from each other. A plurality of first gas holes (731a) may be formed in the first plate (731). Each of the first gas holes (731a) may function as a passage for the first gas to flow. The first gas holes (731a) may belong to the first gas path (73a). A plurality of second gas holes (731b) may be formed in the first plate (731). Each of the second gas holes (731b) may function as a passage for the second gas to flow. The second gas holes (731b) may belong to the second gas path (73b). A plurality of protruding members (731c) may be combined with the first plate (731). The protruding members (731c) may protrude from the lower surface of the first plate (731) toward the second plate (732). Each of the first gas holes (731a) may be formed by penetrating the first plate (731) and the protruding members (731c). Although not shown, the lower surface of the first plate (731) may also be formed flat without the protruding members (731c).

[0081] A plurality of openings (732a) may be formed in the second plate (732). The openings (732a) may be formed to penetrate the second plate (732). The openings (732a) may be arranged at positions corresponding to the respective protruding members (731c). Accordingly, as illustrated in FIG. 2, the protruding members (731c) may be formed to have a length such that they are inserted into the respective openings (732a). Although not illustrated, the protruding members (731c) may be formed to have a length such that they are arranged above each of the openings (732a). The protruding members (731c) may be formed to have a length such that they protrude downward from the second plate (732). The second gas holes (731b) may be arranged to inject gas toward the upper surface of the second plate (732).

[0082] The above injection unit (73) can generate plasma using the second plate (732) and the first plate (731). In this case, plasma power, such as RF power, may be applied to the first plate (731), and the second plate (732) may be grounded. The first plate (731) may be grounded, and plasma power may be applied to the second plate (732).

[0083] As illustrated in FIG. 3, a plurality of first openings (732b) and a plurality of second openings (732c) may be formed in the second plate (732).

[0084] The first openings (732b) may be formed by penetrating the second plate (732). The first openings (732b) may be connected to each of the first gas holes (731a). In this case, the protruding members (731c) may be arranged to contact the upper surface of the second plate (732). The first gas may be injected into the processing space (70) through the first gas holes (731a) and the first openings (732b). The first gas holes (731a) and the first openings (732b) may belong to the first gas path (73a).

[0085] The second openings (732c) may be formed by penetrating the second plate (732). The second openings (732c) may be connected to a buffer space (733) disposed between the first plate (731) and the second plate (732). The second gas may be injected into the processing space (70) through the second gas holes (731b), the buffer space (733), and the second openings (732c). The second gas holes (731b), the buffer space (733), and the second openings (732c) may belong to the second gas path (73b).

[0086] The present invention described above is not limited to the above-described embodiments and the attached drawings, and it will be apparent to a person skilled in the art to which the present invention pertains that various substitutions, modifications, and changes are possible within a scope that does not depart from the technical spirit of the present invention.

Claims

1. A vaporizer for a substrate processing device for vaporizing a liquid or solid precursor on a substrate and supplying it as a gas. A first inlet to which the precursor and first carrier gas are supplied; A diffusion section including a diffusion space wider than the first inlet section and diffusing the precursor within the diffusion space; A second inlet connected to the diffusion section and supplied with a second carrier gas that assists diffusion of the precursor; and It includes a vaporizing unit that is connected to the above diffusion unit and vaporizes the diffused precursor, A vaporization device for a substrate processing device, characterized in that the diffusion unit includes a cooling unit for cooling the diffusion space.

2. In paragraph 1, The above diffusion unit includes a diffusion body that provides the diffusion space in which the precursor and the second carrier gas are diffused, A vaporization device for a substrate processing device, characterized in that the cooling unit is coupled to the diffusion body and cools the diffusion space so as to block vaporization of the precursor in the diffusion space.

3. A vaporizer for a substrate processing device for vaporizing a liquid or solid precursor on a substrate and supplying it as a gas, A first inlet to which the precursor and first carrier gas are supplied; A diffusion section including a diffusion space wider than the first inlet section and diffusing the precursor within the diffusion space; A second inlet connected to the diffusion section and supplied with a second carrier gas that assists diffusion of the precursor; and It includes a vaporizing unit that is connected to the above diffusion unit and vaporizes the diffused precursor, The above diffusion section is controlled to a first temperature, The above vaporizer is controlled to a second temperature, A vaporization device for a substrate processing device, characterized in that the first temperature is lower than the second temperature.

4. In paragraph 3, The above diffusion unit includes a diffusion body that provides the diffusion space in which the precursor and the second carrier gas are diffused, and a cooling unit coupled to the diffusion body. A vaporization device for a substrate processing device, characterized in that the cooling unit cools the diffusion space so as to block vaporization of the precursor in the diffusion space.

5. In paragraph 4, A vaporization device for a substrate processing device, characterized in that the cooling unit includes a heat sink coupled to the outer surface of the diffusion body.

6. In paragraph 1 or paragraph 3, The above vaporization unit includes a vaporization body that provides a vaporization space in which vaporization by heat energy occurs, and a heating unit coupled to the vaporization body. A vaporization device for a substrate processing device, characterized in that the heating unit heats the vaporization space to provide thermal energy.

7. In paragraph 6, A vaporization device for a substrate processing device, characterized in that the heating unit includes a first heater arranged on a side wall of the vaporization body, and a second heater arranged in the vaporization space inside the vaporization body.

8. In paragraph 1 or paragraph 3, It includes a flue nozzle arranged between the diffusion part and the vaporization part to divide the diffusion space and the vaporization space of the vaporization part, The above-mentioned communication nozzle includes a plurality of first communication holes communicating with the diffusion space, a plurality of second communication holes communicating with the vaporization space, and a communication space arranged between the first communication holes and the second communication holes. A vaporization device for a substrate processing device, characterized in that the precursor is supplied from the diffusion space to the vaporization space through the communication space.

9. In paragraph 1, The first inlet section includes a first nozzle body having a first supply hole formed therein for supplying the precursor to the diffusion section, The second inlet section includes a second nozzle body arranged outside the first nozzle body and spaced apart from the first nozzle body, A vaporization device for a substrate processing device, characterized in that the second carrier gas is supplied to the diffusion section through a second supply hole between the first nozzle body and the second nozzle body.

10. A supply unit that supplies source gas; and It includes a substrate processing unit that performs a processing process on a substrate using a source gas supplied from the above supply unit, The above supply unit, A first inlet into which a precursor and a first carrier gas are supplied; A diffusion section including a diffusion space wider than the first inlet section and diffusing the precursor within the diffusion space; A second inlet connected to the diffusion section and supplied with a second carrier gas that assists diffusion of the precursor; and It includes a vaporizing unit that is connected to the above diffusion unit and vaporizes the diffused precursor, A substrate processing device characterized in that the diffusion unit includes a cooling unit for cooling the diffusion space.

11. A supply unit that supplies source gas; and It includes a substrate processing unit that performs a processing process on a substrate using a source gas supplied from the above supply unit, The above supply unit, A first inlet into which a precursor and a first carrier gas are supplied; A diffusion section including a diffusion space wider than the first inlet section and diffusing the precursor within the diffusion space; A second inlet connected to the diffusion section and supplied with a second carrier gas that assists diffusion of the precursor; and It includes a vaporizing unit that is connected to the above diffusion unit and vaporizes the diffused precursor, The above diffusion part is controlled to a first temperature, The above vaporizer is controlled to a second temperature, A substrate processing device characterized in that the first temperature is lower than the second temperature.

12. In paragraph 11, A substrate processing device characterized in that the diffusion unit includes a cooling unit for cooling the diffusion space.

13. In paragraph 10 or 11, The above vaporization unit includes a vaporization body that provides a vaporization space in which vaporization by heat energy occurs, and a heating unit coupled to the vaporization body. A substrate processing device characterized in that the heating unit provides thermal energy by heating the vaporization space.

14. In paragraph 13, A substrate processing device characterized in that the heating unit includes a first heater arranged on a side wall of the vaporization body, and a second heater arranged in the vaporization space inside the vaporization body.

15. In paragraph 11 or 12, The supply unit includes a communication nozzle arranged between the diffusion unit and the vaporization unit to divide the diffusion space and the vaporization space of the vaporization unit, The above-mentioned communication nozzle includes a plurality of first communication holes communicating with the diffusion space, a plurality of second communication holes communicating with the vaporization space, and a communication space arranged between the first communication holes and the second communication holes. A substrate processing device characterized in that the precursor is supplied from the diffusion space to the vaporization space through the communication space.

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