Quantum dot, manufacturing method for quantum dot, quantum dot composition thereof, and electronic device

Abstract

Provided in an embodiment of the present disclosure are a quantum dot, a manufacturing method therefor, a quantum dot composition, and an electronic device, the quantum dot comprising: a core which includes Cu, In, Ga and S, has Ag added thereto, and has a molar ratio of Ag to Group I element of 0.01-0.5; and a shell, which includes, on the core, a Group VI element and at least one selected from a Group I element and a Group III element.

Description

Quantum dots, methods for producing quantum dots, quantum dot compositions, and electronic devices

[0001] The present invention relates to quantum dots, a method for producing the quantum dots, a quantum dot composition, and an electronic device.

[0002] Quantum dots are materials measuring several nanometers in size that, due to quantum confinement effects, exhibit properties distinct from those of their bulk counterparts. Quantum dots exhibit different emission wavelengths depending on their intrinsic band gap.

[0003] Quantum dots are generally composed of a core and a shell, and the core is the main element that determines the characteristics of the quantum dot, such as the emission wavelength and half-width of the quantum dot. These optical characteristics are a special phenomenon that appears at a size of several nanometers, and due to the quantum confinement effect, they exhibit different characteristics from the material in the bulk state. Due to this characteristic, quantum dots can emit light in different colors depending on the size of the particles in the same composition, as the emission wavelength is adjusted. In addition, because quantum dots can emit light in various wavelength ranges, not just in the visible light range, they are attracting attention as a material that can be utilized in next-generation high-brightness light-emitting diodes (LEDs), biosensors, lasers, solar cell nanomaterials, etc.

[0004] Embodiments of the present disclosure can provide a quantum dot having excellent luminescence efficiency, a method for producing the quantum dot, a quantum dot composition, and an electronic device.

[0005] Embodiments of the present disclosure can provide a quantum dot capable of improving quantum efficiency and absorbance by adding Ag to a core including Cu, In, Ga, and S, a method for producing the quantum dot, a quantum dot composition, and an electronic device.

[0006] In one aspect, embodiments of the present disclosure provide a quantum dot comprising a core comprising Cu, In, Ga, and S, a nanostructure comprising a shell disposed on the core, and the core having Ag added thereto, wherein the core has a molar ratio of Ag to a group I element of 0.01 or more and 0.5 or less.

[0007] The core may have a molar ratio of Ag to Group I elements of 0.1 or more and 0.5 or less.

[0008] The quantum dot may be a quantum dot having an emission wavelength of 500 nm to 700 nm.

[0009] The quantum dot may be a quantum dot having an absorption value of 0.35 or greater at 450 nm. For example, a quantum dot having an emission wavelength of 500 to 580 nm may have an absorption value of 0.35 or greater at 450 nm, and a quantum dot having an emission wavelength of 580 to 700 nm may have an absorption value of 0.45 or greater at 450 nm.

[0010] The core can be manufactured by heating a precursor solution and then injecting Ag.

[0011] Quantum dots may be quantum dots in which internal defects existing in the core are passivated by Ag.

[0012] Quantum dots can be quantum dots in which Ag is placed at a position where Cu is defective in the crystal structure of the core.

[0013] The shell may comprise at least one selected from a group I element, a group II element, and a group III element, and a group VI element.

[0014] The group I element may include at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, the group II element may include at least one selected from Be, Mg, Ca, Sr, Zn, Cd, and Hg, the group III element may include at least one selected from Al, Ga, In, and Tl, and the group VI element may include at least one selected from S, Se, and Te.

[0015] The shell comprises a first shell disposed on the core and including at least one selected from a group I element, a group II element, and a group III element and a group VI element, and a second shell disposed on the first shell and including at least one selected from a group I element, a group II element, and a group III element and a group VI element, wherein the group I element includes at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, the group II element includes at least one selected from Be, Mg, Ca, Sr, Zn, Cd, and Hg, the group III element includes at least one selected from Al, Ga, In, and Tl, and the group VI element may include at least one selected from S, Se, and Te.

[0016] 제1은 AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS, NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaSe, AuGaTe, AgInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe. AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe, KGaSTe. CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaGaSe, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe, AgCuGaS, AgCuGaSe,AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe, MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

[0017] 2nd edition AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS, NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AuGaS, AuGaSe, AuGaTe, AgInS, AgInSe, AgInTe, AgTiS, AgTiSe, AgTiTe, AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe, KGaSTe, CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaGaSe, AgNaGaTe, AgNaInS, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe, AgCuGaS, AgCuGaSe, AgCuGaTe, AgAuGaS, AgAuGaSe,AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe,MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS may include one or more of

[0018] In another aspect, embodiments of the present disclosure provide a method for manufacturing a quantum dot in which the core has a molar ratio of Ag to group I elements of 0.01 or more and 0.5 or less.

[0019] The quantum dot manufacturing method includes a precursor solution manufacturing step, a precursor solution temperature increasing step, a core manufacturing step, and a shell manufacturing step.

[0020] The precursor solution preparation step is a step of preparing a precursor solution by injecting a copper precursor, an indium precursor, a gallium precursor, a sulfur precursor, and a solvent into a first reactor and reacting them.

[0021] The precursor solution heating step is a step of heating the precursor solution.

[0022] The core manufacturing step is a step of manufacturing a core by injecting a silver precursor into a heated precursor solution and reacting it.

[0023] The shell manufacturing step is a step of manufacturing a shell by injecting a core into a second reactor equipped with a precursor containing a specific element and reacting the core.

[0024] The shell comprises at least one selected from a group I element and a group II element or a group III element and a group VI element, wherein the group I element comprises at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, the group II element comprises at least one selected from Be, Mg, Ca, Sr, Zn, Cd, and Hg, the group III element comprises at least one selected from Al, Ga, In, and Tl, and the group VI element may comprise at least one selected from S, Se, and Te.

[0025] The shell includes a first shell disposed on the core and including at least one selected from a group I element and a group III element and a group VI element, a second shell disposed on the first shell and including at least one selected from a group I element and a group III element and a group VI element, wherein the group I element includes at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, the group III element includes at least one selected from Al, Ga, In, and Tl, and the group VI element may include at least one selected from S, Se, and Te.

[0026] 제1은 AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS, NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaSe, AuGaTe, AgInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe. AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe, KGaSTe. CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaGaSe, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe, AgCuGaS, AgCuGaSe,AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe,MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

[0027] 제2은 AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS, NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaSe, AuGaTe, AgInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe. AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe, KGaSTe. CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaGaSe, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe, AgCuGaS, AgCuGaSe,AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe,MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

[0028] In another aspect, embodiments of the present disclosure provide a quantum dot composition comprising quantum dots.

[0029] In another aspect, embodiments of the present disclosure provide an electronic device including a display device including a light-emitting diode including a curable resin including quantum dots and a control unit for driving the display device.

[0030] Embodiments of the present disclosure can provide a quantum dot having excellent luminescence efficiency, a method for producing the quantum dot, a quantum dot composition, and an electronic device.

[0031] Embodiments of the present disclosure can improve quantum efficiency and absorption by adding Ag to a core including Cu, In, Ga, and S.

[0032] FIG. 1 is a cross-sectional view of a quantum dot according to one embodiment.

[0033] Figure 2 is a cross-sectional view of a quantum dot according to another embodiment.

[0034] Figure 3 is a cross-sectional view of a quantum dot according to another embodiment.

[0035] Figure 4 is a flowchart of a method for manufacturing quantum dots according to another embodiment.

[0036] Figure 5 is a flow chart of a method for manufacturing quantum dots according to another embodiment.

[0037] Figure 6 is a cross-sectional view of an electronic device according to another embodiment.

[0038] Figure 7 is a cross-sectional view of a light emitting diode according to another embodiment.

[0039] Hereinafter, the description of the present invention will describe only the parts necessary for understanding the embodiments, and will detail the manufacturing method of quantum dots. Unless otherwise defined, technical or scientific terms used in the description represent the meaning commonly understood by those of ordinary skill in the art to which the invention pertains. If a detailed description is judged to obscure the gist of the invention, such detailed description will be omitted.

[0040] Additionally, when describing components of the present disclosure, when "includes," "has," "consists of," etc. are used, other parts may be added unless "only" is used. When a component is expressed in the singular, it may include cases where the plural is included unless there is a special explicit description.

[0041] Additionally, terms such as first, second, A, B, (a), (b), etc. may be used to describe the components of the present disclosure. These terms are only intended to distinguish the components from other components, and the nature, order, sequence, or number of the components are not limited by the terms.

[0042] In a description of the positional relationship of components, when it is described that two or more components are "connected," "combined," or "connected," it should be understood that the two or more components may be directly "connected," "combined," or "connected," but that the two or more components may also be further "interposed" with another component to be "connected," "combined," or "connected." Here, the other component may be included in one or more of the two or more components that are "connected," "combined," or "connected" to each other.

[0043] Furthermore, when a component is said to be "on" or "over" another component, it should be understood that this includes not only cases where it is "directly over" the other component, but also cases where there are other components in between. Conversely, when a component is said to be "directly over" another part, it should be understood that there are no other parts in between. Furthermore, when a component is said to be "on" or "over" a reference part, it means that it is located above or below the reference part, and does not necessarily mean that it is located "over" or "over" in the opposite direction of gravity.

[0044] In the description of the temporal flow relationship related to components, operation methods, or manufacturing methods, for example, when the temporal or flow relationship is described as “after”, “following”, “next to”, “before”, etc., it may also include cases where it is not continuous, unless “immediately” or “directly” is used.

[0045] Meanwhile, when numerical values ​​or corresponding information for components are mentioned, even without separate explicit description, the numerical values ​​or corresponding information may be interpreted as including an error range that may occur due to various factors (e.g., process factors, internal or external impact, noise, etc.).

[0046] The "diameter" of a nanostructure refers to the diameter of a cross-section perpendicular to the first axis of the nanostructure, where the first axis has the greatest difference in length with respect to the second and third axes (the second and third axes being the two axes that are most closely equal in length). The first axis is not necessarily the longest axis of the nanostructure; for example, for a disk-shaped nanostructure, the cross-section will be a substantially circular cross-section perpendicular to the short longitudinal axis of the disk. If the cross-section is not circular, the diameter is the average of the major and minor axes of the cross-section. For elongated or high aspect ratio nanostructures, such as nanowires, the diameter is measured across a cross-section perpendicular to the longest axis of the nanowire. For spherical nanostructures, the diameter is measured through the center of the sphere from one side to the other.

[0047] The term "quantum dot" (or "dot") refers to a nanocrystal that exhibits quantum confinement or exciton confinement. A quantum dot may be substantially homogeneous in its material properties, or in certain embodiments, may be heterogeneous, for example comprising a core and at least one shell. The optical properties of a quantum dot may be influenced by its particle size, chemical composition, and / or surface composition, and can be determined by suitable optical testing available in the art. The ability to tailor the nanocrystal size, for example, to a range of about 1 nm to about 15 nm, allows for light emission coverage across the entire optical spectrum, providing great versatility in color rendering.

[0048] As used herein, the term "shell" refers to material that is deposited onto a core or onto a previously deposited shell of the same or different composition, and that results from a single act of deposition of shell material. The exact shell thickness depends on the material as well as the precursor input and conversion and may be reported in nanometers or single layers. "Target shell thickness" refers to the intended shell thickness used to calculate the required precursor amount, and "actual shell thickness" refers to the actual deposited amount of shell material after synthesis and can be measured by methods known in the art. For example, the actual shell thickness can be measured by comparing particle diameters determined from transmission electron microscope (TEM) images of nanocrystals before and after shell synthesis.

[0049] Additionally, in describing embodiments of the present disclosure, "group" refers to a group of the periodic table of elements. Additionally, in describing embodiments of the present disclosure, "cycle" refers to a period of the periodic table of elements.

[0050] Here, “Group I” may include Group IA (or 1A) and Group IB (or 1B), and Group I elements may include, but are not limited to, Li, Na, K, Rb, Cs Cu, Ag, and Au.

[0051] “Group II” may include Group IIA (or 2A) and Group IIB (or 2B), and Group II elements may include, but are not limited to, Be, Mg, Ca, Sr, Zn, Cd, and Hg.

[0052] “Group III” may include Group IIIA (or 3A) and Group IIIB (or 3B), and Group III elements may include, but are not limited to, In, Ga, Al, and Tl.

[0053] “Group VI” may include Group VIA (or 6A), and Group VI elements may include, but are not limited to, S, Se, and Te.

[0054] In describing embodiments of the present disclosure, a precursor is a chemical substance prepared in advance to react quantum dots, and is a concept referring to all compounds including metals, ions, elements, compounds, complexes, composites, and clusters, and is not limited to the final material of the reaction, and may refer to a material that can be obtained at an arbitrarily determined stage.

[0055] Additionally, in describing the present disclosure, when it is said that a part "includes" a certain component, this does not mean that other components are excluded, but rather that other components can be included, unless specifically stated otherwise.

[0056] In addition, when describing the present disclosure, the term "planar" means when the target portion is viewed from above, and the term "cross-sectional" means when the cross-section obtained by cutting the target portion vertically is viewed from the side.

[0057] Quantum dots according to embodiments of the present disclosure will be described in detail with reference to the drawings below.

[0058] FIG. 1 is a cross-sectional view of a quantum dot according to one embodiment.

[0059] Referring to FIG. 1, a quantum dot (10) according to the present disclosure includes a nanostructure (13) including a core (12) including Cu, Ag, In, and S or including Cu, Ag, In, Ga, and S. The nanostructure (13) may include a shell disposed on the surface of the core. That is, the nanostructure (13) may have a core / shell structure.

[0060] The core (12) may be purified prior to deposition of the shell (14). The core (12) may be filtered to remove precipitates from the core solution.

[0061] By additionally including Ag in the core containing Cu, In, Ga, and S, the quantum efficiency and / or absorption can be further increased by passivating internal defects present in the core containing Cu, In, Ga, and S with Ag.

[0062] Additionally, Ag may be placed at a position where Cu is defective in the crystal structure of the core (12) including Cu, In, Ga, and S, but is not limited thereto.

[0063] In addition, since the energy level of Ag is located further from the valence band than the energy level of Cu, when Ag is additionally included in the core including Cu, In, Ga, and S, the quantum dot (10) including Ag can emit higher energy. Accordingly, the emission wavelength of the quantum dot (10) can be blue shifted. (See Examples 1 to 20 described below)

[0064] In addition, the core (12) may have a molar ratio of Ag to the group I element of 0.01 or more and 0.5 or less, preferably 0.1 or more and 0.5 or less. Here, the group I element means the sum of the molar number of Cu and the molar number of Ag in the core (12).

[0065] When the molar ratio of Ag to Group I elements exceeds 0.5, it becomes difficult to remove the remaining silver precursor during the purification step, and as a result, the unremoved Ag acts as a defect, preventing the shell from being effectively built up, thereby reducing the quantum efficiency. (See Comparative Example 2 described below.)

[0066] In addition, when the molar ratio of Ag to group I elements is less than 0.01, the amount of Ag that can passivate internal defects present in the core including Cu, In, Ga, and S decreases, resulting in a decrease in quantum efficiency. (See Comparative Example 1 described below)

[0067] In addition, when the molar ratio of Ag to the group I element is 0.1 or more and 0.5 or less, the remaining silver precursor can be effectively removed in the purification step, and since the defects in the core are sufficiently passivated by Ag, a half-width of 45 nm or less and a quantum efficiency of 76% or more can be achieved.

[0068] In addition, when the molar ratio of Ag to the group I element is 0.01 or more and 0.5 or less, it can have an absorption value of 0.35 or more in the emission wavelength range of 440 nm to 470 nm.

[0069] In addition, the quantum dot (10) may have an emission wavelength of 500 nm to 700 nm, preferably 510 nm to 680 nm, more preferably 515 nm to 650 nm, but is not limited thereto.

[0070] Quantum dots (10) may have an absorption value of 0.35 or more at 450 nm for quantum dots having an emission wavelength of 500 to 580 nm, and may have an absorption value of 0.45 or more at 450 nm for quantum dots having an emission wavelength of 580 to 700 nm, but are not limited thereto.

[0071] Additionally, the core (12) can be manufactured by heating a precursor solution and then injecting Ag, but is not limited thereto.

[0072] Meanwhile, the diameter of the core (12) may be 2 nm or more and 10 nm or less.

[0073] Quantum dots (10) have a full width at half maximum (FWHM) between 10 nm and 55 nm and can exhibit a photoluminescence quantum yield between 70% and 99%.

[0074] In one embodiment, the shell (14) disposed on the core (12) may include at least one selected from a group I element, a group II element, or a group III element and a group VI element.

[0075] The group I element used in the shell (14) may include group IA and group IB, and may be one selected from the group consisting of Li, Na, K, Rb, Cs, Cu, Ag, and Au or a combination thereof, but is not limited thereto.

[0076] The group II element used in the shell (14) may include group IIA and group IIB, and the group II element may include at least one selected from among Be, Mg, Ca, Sr, Zn, Cd, and Hg, or one selected from the group consisting of a combination thereof may be used, but is not limited thereto.

[0077] The group III element used in the shell (14) may include group IIIA and group IIIB, and may be one selected from the group consisting of In, Ga, Al, and Tl or a combination thereof, but is not limited thereto.

[0078] The group VI element used in the shell (14) may be one selected from the group consisting of S, Se, and Te or a combination thereof, but is not limited thereto.

[0079] The shell (14) may be doped with a metal or non-metal. The core (12) / shell (14) may be purified after deposition of the shell (14). The core (12) / shell (14) may be filtered to remove precipitates from the core solution.

[0080] Shell(14) is AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS, NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaSe, AuGaTe, AgInTe, CuTiS, CuTiSe, CuTiTe, AgAlS AgTiTe, AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe. KGaSTe, CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaInS, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe, AgCuGaS, AgCuGaSe,AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe,MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

[0081] The core (12) may have a size of 2 nm or more and 10 nm or less. The shell (14) may have a size of 0.5 nm or more and 5 nm or less. In this case, the quantum dot (10) may have a size of 2 nm or more and 20 nm or less.

[0082] The shape of the quantum dot (10) is not particularly limited to a shape commonly used in the field, but more specifically, a shape such as a spherical, rod-shaped, pyramid-shaped, multi-arm, or cubic nanoparticle, nanotube, nanowire, nanofiber, or nanoplate-shaped particle can be used.

[0083] Quantum dots (10) can control the color of light they emit depending on their particle size, and accordingly, quantum dots (10) can have various light-emitting colors such as blue, red, and green.

[0084] Figure 2 is a cross-sectional view of a quantum dot according to another embodiment.

[0085] Figure 3 is a cross-sectional view of a quantum dot according to another embodiment.

[0086] Referring to FIG. 2, in one embodiment, the quantum dot (10) may include a core-multilayer shell structured nanostructure (13) having a core (12) including Cu, Ag, In, Ga, and S, a first shell (14) disposed on (or directly above) the core (12), for example, including at least one of a Group I element, a Group II element, and a Group III element and a Group VI element, and a second shell (16) disposed on (or directly above) the first shell, including at least one selected from a Group I element, a Group II element, and a Group III element and a Group VI element.

[0087] According to other embodiments, a quantum dot (10) may include a core (12) including Cu, Ag, In, Ga, and S, as shown in FIG. 3, a first shell (14), a second shell (16), and an additional shell (18) outside the second shell (16), or may include a nanostructure (13) that additionally includes another intermediate shell between the shell (14) and the second shell (16), although not shown.

[0088] According to other embodiments, the quantum dot (10) may have a core (12) and a first shell (14) that are substantially the same as the core (12) and shell (14) described with reference to FIG. 1. In other words, the quantum dot (10) including the core (12) and shell (14) illustrated in FIG. 1 may be equally applied to the quantum dot (10) having a core / multilayer shell structure illustrated in FIGS. 2 and 3.

[0089] The second shell (16) surrounds the first shell (14) on the first shell (14) and includes at least one group I element, at least one group II element, and at least one group III element selected from among the group VI elements. The group I element included in the second shell (16) may be the same as Ag included in the core (12), but may not be the same. The group III element included in the second shell (16) may be the same as In and Ga included in the core (12), but may not be the same. In addition, the group VI element included in the second shell (16) may be the same as S included in the core (12), but may not be the same.

[0090] At least one group I element included in the first shell (14) and the second shell (16) may include one or more selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au. At least one group III element included in the first shell (14) and at least one group I element included in the second shell (16) may be the same or different.

[0091] At least one group II element included in the first shell (14) and the second shell (16) may include one or more selected from among Be, Mg, Ca, Sr, Zn, Cd, and Hg.

[0092] At least one group III element included in the first shell (14) and the second shell (16) may include one or more selected from Al, Ga, In, and Tl. At least one group III element included in the first shell (14) and at least one group III element included in the second shell (16) may be the same or different.

[0093] At least one group VI element included in the first shell (14) and the second shell (16) may include one or more selected from S, Se, and Te. At least one group VI element included in the first shell (14) and at least one group VI element included in the second shell may be the same or different.

[0094] The second shell (16) may additionally include other doped group I elements, group II elements, or group III elements.

[0095] Also, 제2shell(16) is AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS, NaGaSe, NaGaTe. KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaSe, AuGaTe, AgInTe, CuTiS, CuTiSe, CuTiTe, AgAlS AgTiTe, AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe. KGaSTe, CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaInS, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe, AgCuGaS,AgCuGaSe, AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe,MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

[0096] At this time, the first shell (14) and the second shell (16) may have a size of 0.5 nm or more and 5 nm or less. At this time, the quantum dot (10) may have a size of 2 nm or more and 20 nm or less. For example, the diameter of the quantum dot (10) may be 2 nm or more and 10 nm or less.

[0097] As described above, in the quantum dot (10) according to the embodiments of the present disclosure, the case in which Ag is further added to the core including Cu, In, Ga, and S is the same as that described for the quantum dot (10) according to the embodiment described above.

[0098] In another aspect, embodiments of the present disclosure may provide a method for manufacturing quantum dots.

[0099] Figure 4 is a flowchart of a method for manufacturing quantum dots according to another embodiment.

[0100] Referring to FIG. 4, the quantum dot manufacturing method (20) according to the embodiments of the present disclosure includes a precursor solution manufacturing step (S21), a precursor solution temperature increasing step (S22), a core manufacturing step (S23), and a shell manufacturing step (S24).

[0101] In the quantum dot manufacturing method (20) according to the embodiments of the present disclosure, details regarding the core and the first shell are the same as those regarding the core (12) and shell (14) described for the quantum dot (10) according to the above-described embodiment, unless specifically described otherwise.

[0102] The quantum dot manufacturing method (20) can be performed by manufacturing a core using a copper precursor, a silver precursor, an indium precursor, a gallium precursor, and a sulfur precursor in a heated reactor, and then manufacturing the core together with a precursor from which a shell is manufactured using a hot-injection method and a heating up method. In addition, the hot-injection method and the heating up method can be performed in each of the core manufacturing step (S23) and the shell manufacturing steps (S24).

[0103] The precursor solution preparation step (S21) is a step of preparing a precursor solution by injecting a copper precursor, an indium precursor, a gallium precursor, a sulfur precursor, and a solvent into the first reactor and causing them to react.

[0104] The precursor solution heating step (S22) is a step of heating the precursor solution.

[0105] The core manufacturing step (S23) is a step of manufacturing a core by injecting a silver precursor into the precursor solution heated in the precursor solution heating step (S22) and reacting the precursor.

[0106] The shell manufacturing step (S24) is a step of manufacturing a shell by injecting and reacting the manufactured core into a first reactor equipped with a gallium precursor and a sulfur precursor.

[0107] As described above, the shell (14) placed on the core (12) may include at least one selected from a group I element, a group II element, or a group III element and a group VI element. In this case, the shell manufacturing step (S24) may manufacture the shell by injecting and reacting the manufactured core into a first reactor equipped with a precursor including at least one selected from a group I element, a group II element, or a group III element and a precursor including a group VI element.

[0108] The copper precursor injected in the precursor solution preparation step (S21) may be, for example, one or more selected from the group consisting of copper iodide, copper chloride, copper bromide, copper acetate, copper acetylacetonate, copper diethyldithiocarbamate, alkyl copper, and aryl copper.

[0109] The indium precursor injected in the precursor solution preparation step (S21) may be, for example, at least one selected from the group consisting of indium(III) acetylacetonate, indium(III) chloride, indium(III) acetate, trimethyl indium, alkyl indium, aryl indium, indium(III) myristate, and indium(III) myristate acetate.

[0110] The gallium precursor injected in the precursor solution preparation step (S21) may be, for example, one or more selected from the group consisting of gallium (III) acetylacetonate, gallium (III) chloride, gallium (III) iodide, gallium (III) bromide, gallium (III) acetate, and gallium (III) nitrate.

[0111] The sulfur precursor injected in the precursor solution preparation step (S21) is, for example, an alkylthiol such as n-butanethiol, isobutanethiol, n-hexanethiol, 1-octanethiol, decanethiol, 1-dodecanethiol, hexadecanethiol, octadecanethiol, sulfur chloride, elemental sulfur, sulfur-trioctylphosphine, sulfur-1-octadecene, sulfur-toluene, sulfur-oleylamine, N,N-dimethyl urea. It may be at least one selected from the group consisting of (N,N-dimethylthiourea).

[0112] The solvent injected in the precursor solution preparation step (S21) may be at least one selected from oleylamine, octadecene, and trioctylamine, but is not limited thereto.

[0113] Each of the copper precursor, indium precursor, gallium precursor, and sulfur precursor injected in the precursor solution manufacturing step (S21) may be a precursor solution mixed with a solvent.

[0114] The precursor solution manufactured through the precursor solution manufacturing step (S21) is heated in the precursor solution heating step (S22).

[0115] The precursor solution heated through the precursor solution heating step (S22) goes through a core manufacturing step (S23) in which a silver precursor is injected and reacted to manufacture a core (12).

[0116] The core manufacturing step (S23) may include step 1-1 and step 1-2.

[0117] Step 1-1 may be a step of manufacturing a core solution by injecting a silver precursor into a heated precursor solution through a precursor solution heating step (S22) and reacting the silver precursor.

[0118] The silver precursor injected in step 1-1 may be, for example, one or more selected from the group consisting of silver (I) acetylacetonate, silver (I) chloride, silver (I) bromide, silver (I) iodide, silver (I) acetate, silver (I) nitrate, and silver (I) myristate.

[0119] Steps 1 and 2 may be steps of adding a purification solvent to the core solution, centrifuging, and dispersing the precipitate separated through centrifugation in a dispersion solvent.

[0120] For example, steps 1 and 2 may be steps of adding a purification solvent such as methanol, ethanol, acetone, or isopropyl alcohol (2-propanol) to the core solution, centrifuging the solution, and then dispersing the precipitate separated through centrifugation in a dispersion solvent such as hexane, toluene, octadecane, heptane, oleylamine, or 1-octadecene.

[0121] A purified core solution can be manufactured through steps 1 and 2.

[0122] In the quantum dot manufacturing method (30) according to the embodiments of the present disclosure, details regarding the core and shell are the same as those regarding the core (12) and shell (14) described for the quantum dot (10) according to the above-described embodiment, unless specifically described otherwise.

[0123] The shell manufacturing step (S24) may include step 2-1 and step 2-2.

[0124] Step 2-1 may be a step of injecting a precursor including at least one selected from a group I element, a group II element, or a group III element into a second reactor equipped with 1-octadecene; trioctylamine; or oleyamine.

[0125] Step 2-2 may be a step of injecting and reacting a VI precursor containing a purified core solution and another Group VI element into the first reactor.

[0126] The group I, group II elements, group III precursors, and group VI precursors injected in steps 2-1 and 2-2 may be, for example, one selected from the group consisting of compounds chemically bonded with group III elements, such as acetate, acetylacetone, oxide, bromide, chloride, and iodide.

[0127] In the shell, the group I precursor may include, but is not limited to, an Ag precursor, a Cu precursor, or an Au precursor.

[0128] The Cu precursor constituting the shell may be, for example, one or more selected from the group consisting of cupper(II) acetylacetonate, cupper(II) chloride, cupper(II) bromide, cupper(II) iodide, cupper(II) acetate, and cupper(II) nitrate.

[0129] The Au precursor constituting the shell may be, for example, one or more selected from the group consisting of hydrogen tetrachloroaurate(III) chloride, gold (III) chloride, and gold (III) bromide.

[0130] The Ag precursor constituting the shell has already been described in the core manufacturing step (S23), so its description is omitted.

[0131] In the shell, the group II precursor may include, but is not limited to, a Zn precursor, a Mg precursor, a Cd precursor, or a thallium precursor.

[0132] The Zn precursors constituting the shell are, for example, ZnOXO Cluster, Zinc Oleate (Zn(Oleate)2), dimethyl Zinc, diethyl zinc, Zinc acetate, Zinc acetate dihydrate, Zinc acetylacetonate, Zinc acetylacetonate hydrate, Zinc iodide, Zinc bromide, Zinc chloride, Zinc fluoride, Zinc nitrate, Zinc oxide, Zinc peroxide, Zinc perchlorate, Zinc perchlorate hexahydrate, Zinc sulfate, or Zinc It may be at least one selected from the group consisting of stearate (Zinc stearate).

[0133] The Mg precursor constituting the shell may be, for example, one or more selected from the group consisting of dimethyl magnesium, diethyl magnesium, magnesium acetate, magnesium acetate dihydrate, magnesium acetylacetonate, magnesium acetylacetonate hydrate, magnesium iodide, magnesium bromide, magnesium chloride, magnesium fluoride, or magnesium stearate.

[0134] The Cd precursor constituting the shell may be, for example, one or more selected from the group consisting of dimethyl cadmium, diethyl cadmium, cadmium acetate, cadmium acetate dihydrate, cadmium acetylacetonate, cadmium acetylacetonate hydrate, cadmium iodide, cadmium bromide, cadmium chloride, cadmium fluoride, or cadmium stearate.

[0135] The thallium precursor constituting the shell may be one selected from the group consisting of compounds such as thallium acetate, thallium acetylacetone, thallium oxide, thallium bromide, thallium chloride, and thallium iodide.

[0136] Group III precursors may include, but are not limited to, Ga precursors, In precursors, Al precursors, or Tl precursors.

[0137] For example, if the group III precursor injected in step 2-1 is a gallium precursor, it may be one selected from the group consisting of compounds such as gallium acetate, gallium acetylacetone, gallium oxide, gallium bromide, gallium chloride, and gallium iodide.

[0138] In the case of the indium precursor injected in step 2-1, the indium precursor has already been described in step 1-1, so the description thereof is omitted.

[0139] If the group VI precursor injected in step 2-2 is a sulfur precursor, the sulfur precursor has already been described in step 1-1, so its description is omitted.

[0140] When the group VI precursor injected in step 2-2 is an aluminum precursor, the aluminum precursor may be at least one selected from the group consisting of compounds such as aluminum(III) chloride, aluminum(III) iodide, aluminum oxide, and aluminum acetylacetonate.

[0141] When the group VI precursor injected in step 2-2 is a selenium precursor, the selenium precursor is composed of, for example, selenium chloride, elemental selenium, selenium-trioctylphosphine, selenium-tributylphosphine, selenium-1-octadecene, selenium-oleic acid, selenium-octadecylamine, selenium-trioctylamine, selenium-octadecylphosphonic acid, selenium-oleylamine, organic selenium compounds, for example, Dibenzyl Diselenide, Diphenyl Diselenide, or selenium hydride. There may be one or more selected from the military.

[0142] When the group VI precursor injected in step 2-2 is a tellurium precursor, the tellurium precursor may be, for example, tellurium chloride, elemental tellurium, tellurium-trioctylphosphine, tellurium-tributylphosphine, tellurium-triphenylphosphine, tellurium-1-octadecene, tellurium-oleic acid, tellurium-octadecylamine, tellurium-trioctylamine, tellurium-octadecylphosphonic acid, tellurium-oleylamine, or It may be one or more selected from the group consisting of tellurium hydride.

[0143] A shell (14) is manufactured by a shell manufacturing step (S24) on a core (12) manufactured by a core manufacturing step (S23), thereby completing the manufacturing of a nanostructure (13) including a core (12) and a shell (14).

[0144] Hereinafter, a quantum dot (10) including a core (12) and first and second shells (14, 16) as shown in FIG. 2 and a quantum dot (10) including a core (12) and three shells (14, 16, 18) as shown in FIG. 3 can be manufactured by repeating the process of manufacturing the shell (14) described above two or three times using precursors used for each shell (14, 16, 18).

[0145] The shape of the quantum dot (10) is not particularly limited to a shape commonly used in the field, but more specifically, a shape such as a spherical, rod-shaped, pyramid-shaped, multi-arm, or cubic nanoparticle, nanotube, nanowire, nanofiber, or nanoplate-shaped particle can be used.

[0146] Referring to FIG. 4, a method for manufacturing a quantum dot (10) including a core (12) and a shell (14) as shown in FIG. 1 has been described. Hereinafter, a method for manufacturing a quantum dot (10) including a core (12) and first and second shells (14, 16) as shown in FIG. 2 will be described with reference to FIG. 5. A quantum dot (10) including a core (12) and three shells (14, 16, 18) as shown in FIG. 3 can be manufactured by adding an outermost shell (18) to the method for manufacturing a quantum dot (10) described with reference to FIG. 5.

[0147] Figure 5 is a flow chart of a method for manufacturing quantum dots according to another embodiment.

[0148] Referring to FIG. 5, the quantum dot manufacturing method (30) according to embodiments of the present disclosure includes a precursor solution manufacturing step (S31), a precursor solution temperature increasing step (S32), a core manufacturing step (S33), a first shell manufacturing step (S34), and a second shell manufacturing step (S35).

[0149] In the quantum dot manufacturing method (30) according to the embodiments of the present disclosure, details regarding the core, the first shell, and the second shell are the same as those regarding the core (12), the first shell (14), and the second shell (16) described for the quantum dot (10) according to the above-described embodiment, unless otherwise specifically described.

[0150] The core manufacturing step (S33) and the first shell manufacturing step (S34) may be substantially the same as the core manufacturing step (S23) and the shell manufacturing step (S24) described with reference to FIG. 4.

[0151] The second shell manufacturing step (S35) manufactures a second shell that surrounds the first shell by injecting and reacting the core / first shell manufactured in a second reactor equipped with at least one precursor selected from a group I precursor including at least one group I element, a group II precursor including a group II element, and a group III precursor including at least one group III element, and a group VI precursor including at least one group VI element.

[0152] The group I elements included in the second shell may include, but are not limited to, one or more selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au. The group II elements may include one or more selected from Be, Mg, Ca, Sr, Zn, Cd, and Hg.

[0153] The group III element may include, but is not limited to, one or more selected from In, Ga, Al, and Tl. The group VI element included in the second shell may include, but is not limited to, one or more selected from S, Se, and Te. The group VI element included in the second shell may or may not be the same as S included in the core.

[0154] The group III precursor including a group III element and the group VI precursor including at least one group VI element used in the second shell manufacturing step (S35) may be the group III precursor and the group VI precursor described in the first shell manufacturing step (S34).

[0155] As described above, the group I elements included in the first shell formed in the first shell manufacturing step (S34) and the second shell formed in the second shell manufacturing step (S35) include at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, the group VI elements included in the first shell formed in the first shell manufacturing step (S34) and the second shell formed in the second shell manufacturing step (S35) include at least one selected from S, Se, and Te, and the group III elements included in the first shell formed in the first shell manufacturing step (S34) and the second shell formed in the second shell manufacturing step (S35) may include at least one selected from Al, Ga, In, and Tl.

[0156] In another embodiment, the first shell formed in the first shell manufacturing step (S34) may be disposed on the core and include at least one selected from a group I element and a group III element and a group VI element, and the second shell formed in the second shell manufacturing step (S35) may be disposed on the first shell and include a second shell including at least one selected from a group I element and a group III element and a group VI element.

[0157] The first shell and the second shell may have a size of 0.5 nm or more and 5 nm or less. In this case, the quantum dot may have a size of 2 nm or more and 20 nm or less.

[0158] The 1st shell formed in the 1st shell manufacturing step (S34) is AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS. NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaSe, AgInTe, AgTiS, AgTiSe, AgTiTe, AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe, KGaSTe, CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaGaTe, AgNaGaTe AgNaInS, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe,AgCuGaS, AgCuGaSe, AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe,MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

[0159] Also, the 제2shell formed in the 제2shell manufacturing step (S36) is AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe. NaGaS, NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaTe, AgInS, AgInSe, AgInTe, AgTiS, AgTiSe, AgTiTe, AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaTe, KNaGaTe. KGaSeTe, KGaSSe, KGaSTe, CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaGaSe, AgNaGaTe, AgNaInS, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe,AgCuGaS, AgCuGaSe, AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe,MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

[0160] The shape of the quantum dot (10) is not particularly limited to a shape commonly used in the field, but more specifically, a shape such as a spherical, rod-shaped, pyramid-shaped, multi-arm, or cubic nanoparticle, nanotube, nanowire, nanofiber, or nanoplate-shaped particle can be used.

[0161] In addition to the quantum dot (10), the quantum dot may contain various other compounds, such as capping agents, solvents, and other additives. These additional compounds may affect the properties of the quantum dot (10), such as stability, size, and optical properties.

[0162] In another aspect, according to embodiments of the present disclosure, a quantum dot organic resin composition or ink composition including a quantum dot (10) described with reference to FIGS. 1 to 3 or a quantum dot manufactured by a quantum dot manufacturing method (20, 30) described with reference to FIGS. 4 and 5 can be provided. In the quantum dot organic resin composition according to embodiments of the present disclosure, details regarding the quantum dot are the same as those of the quantum dot (10) according to embodiments of the present disclosure, unless otherwise described.

[0163] The quantum dot organic composition according to the present embodiments may be an ink composition including a quantum dot (10), an organic resin, an initiator, and a light diffuser.

[0164] The organic resin may include at least one of a binder resin and a reactive unsaturated compound.

[0165] The above binder resin may include an acrylic resin, an epoxy resin, or a combination thereof.

[0166] The above acrylic resin can be polymerized by light and can be a copolymer of a first ethylenically unsaturated monomer and a second ethylenically unsaturated monomer copolymerizable therewith, and can be a resin including one or more acrylic repeating units.

[0167] The above first ethylenically unsaturated monomer is an ethylenically unsaturated monomer containing one or more carboxyl groups, and specific examples thereof include acrylic acid, methacrylic acid, maleic acid, itaconic acid, fumaric acid, or a combination thereof.

[0168] The second ethylenically unsaturated monomer is an aromatic vinyl compound such as styrene, α-methylstyrene, vinyltoluene, vinylbenzylmethylether, etc.; an unsaturated carboxylic acid ester compound such as methyl(meth)acrylate, ethyl(meth)acrylate, butyl(meth)acrylate, 2-hydroxyethyl(meth)acrylate, 2-hydroxybutyl(meth)acrylate, benzyl(meth)acrylate, cyclohexyl(meth)acrylate, phenyl(meth)acrylate, etc.; an unsaturated carboxylic acid aminoalkyl ester compound such as 2-aminoethyl(meth)acrylate, 2-dimethylaminoethyl(meth)acrylate, etc.; a carboxylic acid vinyl ester compound such as vinyl acetate, vinyl benzoate, etc. Unsaturated carboxylic acid glycidyl ester compounds such as glycidyl (meth)acrylate; vinyl cyanide compounds such as (meth)acrylonitrile; unsaturated amide compounds such as (meth)acrylamide; etc., and these can be used alone or in combination of two or more.

[0169] Specific examples of the above acrylic resin include, but are not limited to, polybenzyl methacrylate, (meth)acrylic acid / benzyl methacrylate copolymer, (meth)acrylic acid / benzyl methacrylate / styrene copolymer, (meth)acrylic acid / benzyl methacrylate / 2 hydroxy ethyl methacrylate copolymer, (meth)acrylic acid / benzyl methacrylate / styrene / 2-hydroxy ethyl methacrylate copolymer, and the like. These may be used singly or in combination of two or more.

[0170] The above epoxy resin is a monomer or oligomer that can be polymerized by heat, and may include compounds having carbon-carbon unsaturated bonds and carbon-carbon cyclic bonds.

[0171] As commercial products of these compounds, examples of the bisphenyl epoxy resin represented by the above chemical formula 1 include YX4000, YX4000H, YL6121H, YL6640, and YL6677 from Yukashell Epoxy Co., Ltd.; examples of the cresol novolac epoxy resin represented by the above chemical formula 2 include EOCN-102, EOCN-103S, EOCN-104S, EOCN-1020, EOCN-1025, and EOCN-1027 from Nippon Kayaku Co., Ltd. and Epicoat 180S75 from Yukashell Epoxy Co., Ltd.; examples of the bisphenol A epoxy resin include Epicoat 1001, 1002, 1003, 1004, 1007, 1009, 1010, and 828 from Yukashell Epoxy Co., Ltd.; Bisphenol F type epoxy resins include Epicoat 807 and 834 from Yukashell Epoxy Co., Ltd.; Phenol novolak type epoxy resins include Epicoat 152, 154, 157H65 from Yukashell Epoxy Co., Ltd. and EPPN 201, 202 from Nippon Kayaku Co., Ltd.; Other cyclic aliphatic epoxy resins include CY175, CY177 and CY179 from CIBA-GEIGY AG, ERL-4234, ERL-4299, ERL-4221 and ERL-4206 from UCC, Shodyne 509 from Showa Denko Co., Ltd., Araldite CY-182, CY-192 and CY-184 from CIBA-GEIGY AG, Epichron 200 and 400 from Dainippon Ink & Kogyo Co., Ltd., Epicoat 871, 872 and EP1032H60 from Yukashell Epoxy Co., Ltd., and ED-5661 and ED-5662 from Celanese Coating Co., Ltd.; Examples of aliphatic polyglycidyl ethers include Epicoat 190P and 191P from Yukashell Epoxy Co., Ltd., Epolite 100MF from Kyoeisha Yushi Chemical Co., Ltd., and Epiol TMP from Nippon Yushi Co., Ltd.

[0172] Reactive unsaturated compounds, for example, monofunctional esters such as ethylene glycol methacrylate, methyl methacrylate, ethyl methacrylate, isopropyl methacrylate, N-butyl methacrylate, T-butyl methacrylate, hexyl methacrylate, ethylhexyl methacrylate, lauryl methacrylate, octyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, tetracyclodecyl methacrylate, N-phenylmaleimide, N-cyclohexyl maleimide, methacrylic acid, isobornyl methacrylate, styrene, vinyl acetate, vinyl pyrrolidone, etc., and polyfunctional esters such as ethylene glycol diacrylate, ethylene glycol dimethacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, Examples thereof include 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, propylene glycol diacrylate, propylene glycol dimethacrylate, dipropylene glycol diacrylate, dipropylene glycol dimethacrylate, tripropylene glycol diacrylate, tripropylene glycol, dimethacrylate pentaerythritol triacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, bisphenol A epoxy acrylate, ethylene glycol monomethyl ether acrylate, trimethylolpropane triacrylate, and the like, and multi-acrylates having ethyleneoxy groups or γ or ε-lactone chains linked thereto, but are not limited thereto.

[0173] The initiator may be one or more of a photopolymerization initiator and a thermal polymerization initiator.

[0174] The photopolymerization initiator may be, for example, one or more of an acetophenone-based compound, a benzophenone-based compound, a thioxanthone-based compound, a benzoin-based compound, an oxime ester-based compound, a phosphorus-based compound, and a triazine-based compound.

[0175] Examples of the above acetophenone compounds include 2,2'-diethoxy acetophenone, 2,2'-dibutoxy acetophenone, 2-hydroxy-2-methylpropiophenone, pt-butyltrichloro acetophenone, pt-butyldichloro acetophenone, 4-chloro acetophenone, 2,2'-dichloro-4-phenoxy acetophenone, 2-methyl-1-(4-(methylthio)phenyl)-2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, etc.

[0176] Examples of the above benzophenone compounds include benzophenone, benzoyl benzoate, methyl benzoyl benzoate, 4-phenyl benzophenone, hydroxy benzophenone, acrylated benzophenone, 4,4'-bis(dimethylamino)benzophenone, 4,4'-bis(diethylamino)benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-2-methoxybenzophenone, etc.

[0177] Examples of the above thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, isopropyl thioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxanthone, 2-chlorothioxanthone, etc.

[0178] Examples of the above benzoin compounds include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl dimethyl ketal, etc.

[0179] Examples of the above oxime ester compounds include 2-(o-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione, 1-(o-acetyloxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethanone, O-ethoxycarbonyl-α-oxyamino-1-phenylpropan-1-one, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one, 1-(4-phenylsulfanylphenyl)-butane-1,2-dione2-oxime-O-benzoate, 1-(4-phenylsulfanylphenyl)-octane-1,2-dione2-oxime-O-benzoate, Examples thereof include 1-(4-phenylsulfanylphenyl)-octane-1-one oxime-O-acetate and 1-(4-phenylsulfanylphenyl)-butane-1-one oxime-O-acetate, 1-(4-methylsulfanyl-phenyl)-butane-1-one oxime-O-acetate, hydroxyimino-(4-methylsulfanyl-phenyl)-acetic acid ethyl ester-O-acetate, and hydroxyimino-(4-methylsulfanyl-phenyl)-acetic acid ethyl ester-O-benzoate.

[0180] Examples of the above-mentioned phosphorus compounds include diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide, benzyl(diphenyl)phosphine oxide, and diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide.

[0181] Examples of the above triazine compounds include 2,4,6-trichloro-s-triazine, 2-phenyl 4,6-bis(trichloromethyl)-s-triazine, 2-(3',4'-dimethoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4'-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6-bis(trichloromethyl)-s-triazine, 2-biphenyl 4,6-bis(trichloromethyl)-s-triazine, bis(trichloromethyl)-6-styryl-s-triazine, Examples include 2-(naphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4-methoxynaphtho-1-yl)-4,6-s(trichloromethyl)-s-triazine, 2-4-trichloromethyl(piperonyl)-6-triazine, and 2-4-trichloromethyl(4'-methoxystyryl)-6-triazine.

[0182] In addition to the above compound, the photopolymerization initiator may also include a carbazole compound, a diketone compound, a sulfonium borate compound, a diazo compound, an imidazole compound, a biimidazole compound, etc.

[0183] The above thermal polymerization initiator may be a peroxide-based compound, an azobis-based compound, etc.

[0184] Examples of the above peroxide compounds include ketone peroxides such as methyl ethyl ketone peroxide, methyl isobutyl ketone peroxide, cyclohexanone peroxide, methylcyclohexanone peroxide, and acetylacetone peroxide; diacyl peroxides such as isobutyryl peroxide, 2,4-dichlorobenzoyl peroxide, o-methylbenzoyl peroxide, and bis-3,5,5-trimethylhexanoyl peroxide; hydroperoxides such as 2,4,4,-trimethylpentyl-2-hydroperoxide, diisopropylbenzene hydroperoxide, cumene hydroperoxide, and t-butyl hydroperoxide; Dialkyl peroxides such as dicumyl peroxide, 2,5-dimethyl-2,5-di(t-butylperoxy)hexane, 1,3-bis(t-butyloxyisopropyl)benzene, and t-butylperoxyvaleric acid n-butyl ester; alkyl peresters such as 2,4,4-trimethylpentyl peroxyphenoxyacetate, α-cumyl peroxyneodecanoate, t-butyl peroxybenzoate, and di-t-butyl peroxytrimethyl adipate; Examples include percarbonates such as di-3-methoxybutyl peroxydicarbonate, di-2-ethylhexyl peroxydicarbonate, bis-4-t-butylcyclohexyl peroxydicarbonate, diisopropyl peroxydicarbonate, acetylcyclohexylsulfonyl peroxide, and t-butyl peroxyaryl carbonate.

[0185] Examples of the above azobis compounds include 1,1'-azobiscyclohexane-1-carbonitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2, -azobis(methylisobutyrate), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), α,α'-azobis(isobutylnitrile), and 4,4'-azobis(4-cyanovaleic acid).

[0186] Examples of the above acetophenone compounds include 2,2'-diethoxy acetophenone, 2,2'-dibutoxy acetophenone, 2-hydroxy-2-methylpropiophenone, pt-butyltrichloro acetophenone, pt-butyldichloro acetophenone, 4-chloro acetophenone, 2,2'-dichloro-4-phenoxy acetophenone, 2-methyl-1-(4-(methylthio)phenyl)-2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, etc.

[0187] Examples of the above benzophenone compounds include benzophenone, benzoyl benzoate, methyl benzoyl benzoate, 4-phenyl benzophenone, hydroxy benzophenone, acrylated benzophenone, 4,4'-bis(dimethylamino)benzophenone, 4,4'-bis(diethylamino)benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-2-methoxybenzophenone, etc.

[0188] Examples of the above thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, isopropyl thioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxanthone, 2-chlorothioxanthone, etc.

[0189] Examples of the above benzoin compounds include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl dimethyl ketal, etc.

[0190] Examples of the above oxime ester compounds include 2-(o-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione, 1-(o-acetyloxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethanone, O-ethoxycarbonyl-α-oxyamino-1-phenylpropan-1-one, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one, 1-(4-phenylsulfanylphenyl)-butane-1,2-dione2-oxime-O-benzoate, 1-(4-phenylsulfanylphenyl)-octane-1,2-dione2-oxime-O-benzoate, Examples thereof include 1-(4-phenylsulfanylphenyl)-octane-1-one oxime-O-acetate and 1-(4-phenylsulfanylphenyl)-butane-1-one oxime-O-acetate, 1-(4-methylsulfanyl-phenyl)-butane-1-one oxime-O-acetate, hydroxyimino-(4-methylsulfanyl-phenyl)-acetic acid ethyl ester-O-acetate, and hydroxyimino-(4-methylsulfanyl-phenyl)-acetic acid ethyl ester-O-benzoate.

[0191] Examples of the above-mentioned phosphorus compounds include diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide, benzyl(diphenyl)phosphine oxide, and diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide.

[0192] Examples of the above triazine compounds include 2,4,6-trichloro-s-triazine, 2-phenyl 4,6-bis(trichloromethyl)-s-triazine, 2-(3',4'-dimethoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4'-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6-bis(trichloromethyl)-s-triazine, 2-biphenyl 4,6-bis(trichloromethyl)-s-triazine, bis(trichloromethyl)-6-styryl-s-triazine, Examples include 2-(naphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4-methoxynaphtho-1-yl)-4,6-s(trichloromethyl)-s-triazine, 2-4-trichloromethyl(piperonyl)-6-triazine, and 2-4-trichloromethyl(4'-methoxystyryl)-6-triazine.

[0193] In addition to the above compound, the photopolymerization initiator may also include a carbazole compound, a diketone compound, a sulfonium borate compound, a diazo compound, an imidazole compound, a biimidazole compound, etc.

[0194] The above thermal polymerization initiator may be a peroxide-based compound, an azobis-based compound, etc.

[0195] Examples of the above peroxide compounds include ketone peroxides such as methyl ethyl ketone peroxide, methyl isobutyl ketone peroxide, cyclohexanone peroxide, methylcyclohexanone peroxide, and acetylacetone peroxide; diacyl peroxides such as isobutyryl peroxide, 2,4-dichlorobenzoyl peroxide, o-methylbenzoyl peroxide, and bis-3,5,5-trimethylhexanoyl peroxide; hydroperoxides such as 2,4,4,-trimethylpentyl-2-hydroperoxide, diisopropylbenzene hydroperoxide, cumene hydroperoxide, and t-butyl hydroperoxide; Dialkyl peroxides such as dicumyl peroxide, 2,5-dimethyl-2,5-di(t-butylperoxy)hexane, 1,3-bis(t-butyloxyisopropyl)benzene, and t-butylperoxyvaleric acid n-butyl ester; alkyl peresters such as 2,4,4-trimethylpentyl peroxyphenoxyacetate, α-cumyl peroxyneodecanoate, t-butyl peroxybenzoate, and di-t-butyl peroxytrimethyl adipate; Examples include percarbonates such as di-3-methoxybutyl peroxydicarbonate, di-2-ethylhexyl peroxydicarbonate, bis-4-t-butylcyclohexyl peroxydicarbonate, diisopropyl peroxydicarbonate, acetylcyclohexylsulfonyl peroxide, and t-butyl peroxyaryl carbonate.

[0196] Examples of the above azobis compounds include 1,1'-azobiscyclohexane-1-carbonitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2, -azobis(methylisobutyrate), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), α,α'-azobis(isobutylnitrile), and 4,4'-azobis(4-cyanovaleic acid).

[0197] The above resin may be included in an amount of 30 wt% to 90 wt%, for example, 35 wt% to 85 wt%, based on the total amount of the curable composition. When the content of the resin (binder resin and reactive unsaturated compound) is within the above range, the reliability of the pattern formed through inkjet printing produced therefrom, such as heat resistance, chemical resistance, film strength, and physical properties, is excellent.

[0198] The above resin may be a curable resin, for example, a thermosetting resin or a photocurable resin.

[0199] Examples of photosensitizers include tetraethylene glycol bis-3-mercaptopropionate, pentaerythritol tetrakis-3-mercaptopropionate, and dipentaerythritol tetrakis-3-mercaptopropionate.

[0200] The content of the initiator may be 0.1 wt% to 10 wt%, or 0.1 wt% to 8 wt%, based on the total amount of the photosensitive resin composition. When the content of the initiator satisfies the above-described range, sufficient curing occurs upon exposure or heating in a pattern forming process using the organic resin composition, thereby obtaining excellent reliability, and the pattern has excellent heat resistance, light resistance, and chemical resistance, and also excellent resolution and adhesion, and can prevent a decrease in transmittance due to unreacted initiator.

[0201] The above curable resin composition may further include a light diffusing agent, for example, the light diffusing agent may include barium sulfate, calcium carbonate, zinc sulfide, titanium dioxide, zirconia, or a combination thereof.

[0202] At this time, the content of the light diffusing agent may be 0.1 wt% to 10 wt%, or 0.1 wt% to 8 wt%, based on the total amount of the curable resin composition. When the content of the light diffusing agent satisfies the above-described range, it can have a sufficient light diffusing effect and a viscosity suitable for coating and inkjetting.

[0203] According to one embodiment, the content of the quantum dot (10) may be 20 parts by weight to 60 parts by weight, for example, 25 parts by weight to 50 parts by weight, or 30 parts by weight to 45 parts by weight, based on 100 parts by weight of the total content of the quantum dot ink composition. According to one embodiment, the ink composition may not include a solvent. That is, the ink composition may be a solvent-free quantum dot ink composition. According to one embodiment, the ink composition may have a viscosity at 25°C to 60°C of 40 cPs or less, 5 cPs to 40 cPs, 5 cPs to 35 cPs, or 5 cPs to 25 cPs. According to an embodiment, the ink composition may have a surface tension at 25°C of 35 mN / m or less, 10 mN to 34 mN, 15 mN to 34 mN, 20 mN to 33 mN, or 25 mN / m to 32 mN / m. When the above-described viscosity and / or surface tension ranges are satisfied, the ink composition may be suitably used as a solvent-free quantum dot ink composition for various components such as a color conversion component or a light-emitting layer of a light-emitting device in a solution process such as an inkjet.

[0204] In another aspect, embodiments of the present disclosure provide an optical film comprising a quantum dot organic composition.

[0205] In describing the optical film according to the embodiments of the present disclosure, details regarding the quantum dot organic composition are the same as those described for the quantum dot organic composition according to the embodiments of the present disclosure described above, unless specifically described otherwise, and thus will be omitted.

[0206] An optical film may be, for example, a wavelength conversion film that converts light of a specific wavelength into light of another specific wavelength, or a color filter. For example, an optical film according to embodiments of the present disclosure may be used as a color filter that converts the wavelength of light emitted from a backlight including a light-emitting diode, but an optical film according to embodiments of the present disclosure is not limited to a color filter or a wavelength conversion film.

[0207] An optical film can be used, for example, as a layer positioned between the cathode and anode electrodes of an electroluminescent diode, and in which light is emitted by electrons and holes arriving from the cathode and anode electrodes.

[0208] In another aspect, embodiments of the present disclosure provide an electronic device including an optical film.

[0209] According to one embodiment, an optical member formed using a quantum dot organic composition may be provided. For example, the optical member may be a color conversion member.

[0210] According to another aspect, referring to FIG. 6, an electronic device (100) according to one embodiment includes a substrate (130), a light source (120) disposed on the substrate (130), and a color conversion member (110) disposed in a path of light emitted from the light source (120), and the color conversion member (110) can be formed using the ink composition described above.

[0211] According to one implementation example, the light source (120) may be a light-emitting element. For example, the light source (120) may be an organic light-emitting diode (OLED) or an inorganic light-emitting diode (QLED or ILED).

[0212] In another aspect, referring to FIG. 7, a light emitting diode (200) according to another embodiment may include quantum dots (10). The light emitting diode (200) may include an optical film manufactured from a quantum dot organic composition including a curable resin including the quantum dots (10) described above.

[0213] A light emitting diode (200) according to other embodiments includes an anode (210), a cathode (230), and an intermediate layer (220) positioned therebetween. The intermediate layer (220) may include a light emitting layer comprising a photosensitive resin composition including the quantum dots (10) described above.

[0214] In addition, another aspect of the present disclosure can provide an electronic device including a display device including the aforementioned light-emitting diode and a control unit for driving the display device.

[0215] Electronic devices may include, for example, display devices, lighting devices, solar cells, portable or mobile terminals (e.g., smart phones, tablets, PDAs, electronic dictionaries, PMPs, etc.), navigation terminals, game consoles, various TVs, various computer monitors, etc., but are not limited thereto, and any form of device may be included as long as it includes the above-mentioned component(s).

[0216] Since the application of quantum dots (10) to various electronic components and devices can be easily applied by those with ordinary knowledge in the art, a detailed description thereof is omitted.

[0217] Hereinafter, embodiments according to the present disclosure will be specifically described as experimental examples, but the present disclosure is not limited to the following embodiments.

[0218] The examples below exemplarily describe a method for manufacturing a quantum dot (10) including a core (12) and a first shell (14) described with reference to FIG. 2.

[0219] At this time, Zn is used as a group II element used in the first shell (14), Ga is used as a group III element, and S or Se is used as a group VI element, as examples. In other words, examples of manufacturing CuAgInGaS / ZnS and CuAgInGaS / GaS, CuAgInGaS / ZnSe quantum dots are described as examples.

[0220] Manufacturing the core (12) and the first shell (14) using the elements described in the above-described examples in the same manner as in the examples below corresponds to a conventional technique, so a specific description thereof is omitted.

[0221] [Example]

[0222] 1. Comparative Example 1: Fabrication of CuInGaS / GaS core-shell quantum dots

[0223] (1) Manufacturing Example 1-1 (Manufacturing of sulfur-oleylamine precursor solution)

[0224] 0.305 g (9.5 mmol) of sulfur (S) and 9.5 mL (28.5 mmol) of oleylamine were placed in a 50 mL flask, depressurized at room temperature (RT) for 30 minutes, heated to 120°C for 10 minutes under reduced pressure, and reacted for 1 hour. The mixed solution was then made into a nitrogen (N2) atmosphere and cooled to room temperature to prepare a sulfur (S) precursor solution. The sulfur (S) concentration of the precursor solution is 1 M.

[0225] (2) Manufacturing Example 1-2 Manufacturing of CuInGaS core

[0226] 1) In a 50 mL three-necked round flask equipped with a reflux device, add 5 mL of octadecene (ODE), 0.019 g of copper iodide, 0.0664 g of indium chloride, 0.257 g of gallium acetylacetonate, 1 mL of 1 M sulfur-oleylamine (a mixture of 0.305 g of sulfur and 9.5 mL of oleylamine) prepared in Preparation Example 1-1, and 0.5 mL of dodecanethiol (DDT), and react the mixture at 70°C for 30 minutes under reduced pressure.

[0227] 2) After replacing the above reactant with a nitrogen (N2) atmosphere, maintain it at 210°C for 10 minutes.

[0228] 3) The above reaction product is cooled to room temperature, purified with ethanol, and then a CuInGaS core precipitate is obtained, and the precipitate is redispersed in toluene.

[0229] (3) Manufacturing Example 1-3 Manufacturing of CuInGaS / GaS core-shell quantum dots

[0230] 1) Add 16 mL of oleylamine and 1 g of gallium acetylacetonate to a 50 mL three-necked round flask equipped with a reflux device and react at 120°C for 30 minutes under reduced pressure.

[0231] 2) After replacing the above reactant with a nitrogen (N2) atmosphere, the CuInGaS core dispersed in toluene and 3.4 mL of 1M sulfur-oleylamine (a mixture of 0.305 g of sulfur and 9.5 mL of oleylamine) are injected, and the reaction is performed at 240°C for 10 minutes.

[0232] 3) After the reaction is complete, cool the mixture to room temperature, add ethanol, centrifuge, and redisperse in toluene.

[0233] 2. Comparative Example 2 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.55)

[0234] (1) Manufacturing Example 2-1 (Manufacturing of silver-acetate-oleylamine precursor solution)

[0235] Silver acetate (0.1 g) and oleylamine (10 mL) were placed in a 50 mL flask, depressurized at room temperature (RT) for 1 hour, heated to 120°C for 10 minutes under reduced pressure, and reacted for 1 hour. The mixed solution was then made into a nitrogen (N2) atmosphere and cooled to room temperature to prepare a silver (Ag) precursor solution.

[0236] (2) Manufacturing Example 2-2 Manufacturing of CuAgInGaS core

[0237] 1) In a 50 mL three-necked round flask equipped with a reflux device, add 5 mL of octadecene (ODE), 0.019 g of copper iodide, 0.0664 g of indium chloride, 0.257 g of gallium acetylacetonate, 1 mL of 1 M sulfur-oleylamine (a mixture of 0.305 g of sulfur and 9.5 mL of oleylamine) prepared in Preparation Example 1-1, and 0.5 mL of dodecanethiol (DDT), and react the mixture at 70°C for 30 minutes under reduced pressure.

[0238] 2) After replacing the above reactant with a nitrogen (N2) atmosphere, the temperature is raised to 180°C, and 5 mL of 0.06M silver acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) prepared in Manufacturing Example 2-1 is injected, followed by reaction at 210°C for 10 minutes.

[0239] 3) The above reaction product is cooled to room temperature and purified with ethanol to obtain a CuAgInGaS core precipitate, which is then redispersed in toluene.

[0240] (3) Manufacturing Example 2-3 Manufacturing of CuAgInGaS / GaS core-shell quantum dots

[0241] 1) Add 16 mL of oleylamine and 1 g of gallium acetylacetonate to a 50 mL three-necked round flask equipped with a reflux device and react at 120°C for 30 minutes under reduced pressure.

[0242] 2) After replacing the above reactant with a nitrogen (N2) atmosphere, the CuAgInGaS core dispersed in toluene and 3.4 mL of 1M sulfur-oleylamine (a mixture of 0.305 g of sulfur and 9.5 mL of oleylamine) are injected, and the reaction is performed at 240°C for 10 minutes.

[0243] 3) After the reaction is complete, cool the mixture to room temperature, add ethanol, centrifuge, and redisperse in toluene.

[0244] 3. Example 1 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.01)

[0245] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 0.02 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0246] 4. Example 2 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.03)

[0247] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 0.05 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0248] 5. Example 3 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.05)

[0249] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 0.7 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0250] 6. Example 4 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.07)

[0251] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 0.1 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0252] 7. Example 5 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.1)

[0253] In 2) of Manufacturing Example 2-2 of Comparative Example 2, a compound is manufactured in the same manner as described above, except that 0.14 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0254] 8. Example 6 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.15)

[0255] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 0.25 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0256] 9. Example 7 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.2)

[0257] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 0.4 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0258] 10. Example 8 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.25)

[0259] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 0.6 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0260] 11. Example 9 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.3)

[0261] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 0.8 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0262] 12. Example 10 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.35)

[0263] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 1 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0264] 12. Example 11 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.4)

[0265] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 1.5 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0266] 13. Example 12 Preparation of CuAgInGaS / GaS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.5)

[0267] It is manufactured in the same manner as in 2) of Manufacturing Example 2-2 of Comparative Example 2, except that 3 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0268] 14. Example 13 Preparation of CuAgInGaS / ZnS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.01)

[0269] (1) Manufacturing Example 3-1 (Manufacturing of Zn precursor solution)

[0270] 1) Add 18.222 g of zinc acetate dihydrate, 4 mL of oleic acid, and 2 mL of octadecene to a 10 mL vial and react on a hot plate at 200°C to prepare.

[0271] (2) Manufacturing Example 3-2 Manufacturing of CuAgInGaS / ZnS core-shell quantum dots

[0272] 1) In a 50 mL three-necked round flask equipped with a reflux device, 5 mL of octadecene (ODE), 0.019 g of copper iodide, 0.0664 g of indium chloride, 0.257 g of gallium acetylacetonate, 0.02 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) from 2) of Manufacturing Example 2-2, 1 mL of 1 M sulfur-oleylamine (a mixture of 0.305 g of sulfur and 9.5 mL of oleylamine) prepared in Manufacturing Example 1-1, and 0.5 mL of dodecanethiol (DDT) were added, and the mixture was stirred under reduced pressure. React at 70°C for 30 minutes.

[0273] 2) After replacing the above reactant with a nitrogen (N2) atmosphere, maintain it at 210°C for 10 minutes.

[0274] 3) Cool the above reaction product to room temperature, inject the Zn precursor solution of Preparation Example 3-1 of Example 13, and react at 240°C for 1 hour.

[0275] 4) After the reaction mixture is cooled to room temperature, ethanol is added, centrifuged, and then redispersed in toluene.

[0276] 15. Example 14 Preparation of CuAgInGaS / ZnS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.1)

[0277] It is manufactured in the same manner as in 1) of Manufacturing Example 3-2 of the above Example 13, except that 0.14 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0278] 16. Example 15 Preparation of CuAgInGaS / ZnS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.3)

[0279] It is manufactured in the same manner as in 1) of Manufacturing Example 3-2 of the above Example 13, except that 0.8 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0280] 17. Example 16 Preparation of CuAgInGaS / ZnS core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.5)

[0281] It is manufactured in the same manner as in 1) of Manufacturing Example 3-2 of Example 13 above, except that 3 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0282] 18. Example 17 Preparation of CuAgInGaS / ZnSe core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.01)

[0283] (1) Manufacturing Example 4-2 (Selenium solution manufacturing)

[0284] Add 3.166 g of selenium powder and 5 mL of octadecene to a 10 mL vial and heat on a hot plate at 200°C to prepare.

[0285] (2) Manufacturing Example 4-2 Manufacturing of CuAgInGaS / ZnSe core-shell quantum dots

[0286] 1) In a 50 mL three-necked round flask equipped with a reflux device, 5 mL of octadecene (ODE), 0.019 g of copper iodide, 0.0664 g of indium chloride, 0.257 g of gallium acetylacetonate, 0.02 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) from 2) of Manufacturing Example 2-2, 1 mL of 1 M sulfur-oleylamine (a mixture of 0.305 g of sulfur and 9.5 mL of oleylamine) prepared in Manufacturing Example 1-1, and 0.5 mL of dodecanethiol (DDT) were added, and the mixture was stirred under reduced pressure. React at 70°C for 30 minutes.

[0287] 2) After replacing the above reactant with a nitrogen (N2) atmosphere, maintain it at 210°C for 10 minutes.

[0288] 3) Cool the above reaction product to room temperature, inject the Zn precursor solution of Manufacturing Example 3-1 of Example 13 and the Selenium solution of Manufacturing Example 4-1 of Example 17, and then react at 240°C for 1 hour.

[0289] 4) After the reaction mixture is cooled to room temperature, ethanol is added, centrifuged, and then redispersed in toluene.

[0290] 19. Example 18 Preparation of CuAgInGaS / ZnSe core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.1)

[0291] It is manufactured in the same manner as in 1) of Manufacturing Example 4-2 of the above Example 17, except that 0.14 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0292] 20. Example 19 Preparation of CuAgInGaS / ZnSe core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.3)

[0293] It is manufactured in the same manner as in 1) of Manufacturing Example 4-2 of the above Example 17, except that 0.8 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0294] 21. Example 20 Preparation of CuAgInGaS / ZnSe core-shell quantum dots ((Ag mol%) / (Ag+Cu mol%) = 0.5)

[0295] It is manufactured in the same manner as in 1) of Manufacturing Example 4-2 of Example 17 above, except that 3 mL of silver(I) acetate-oleylamine (a mixture of 0.1 g of silver acetate and 10 mL of oleylamine) is injected.

[0296] [Experimental Example]

[0297] Table 1 shows the results measured with the QE-2000 equipment of Otsuka Electronics for comparative examples and examples, and shows the results of confirming the optical characteristics [emission peak, quantum yield, full width at half maximum (FWHM)] of the manufactured quantum dots. In addition, the molar ratio of Ag and Cu to the total constituent elements of the quantum dot core was confirmed using the 7900 ICP-MS of Agilent Technologies Korea, and the UV-2600 of SHIMADZU was used to dilute 1 mg of the quantum dot core shell in 3 ml of toluene and measure the absorption spectrum to obtain an absorbance graph and confirm the absorption value at a wavelength of 450 nm in the absorbance graph.

[0298] In particular, quantum dot displays commonly use blue light sources with wavelengths ranging from 440 to 470 nm as backlights. To achieve efficient color conversion, quantum dot materials with high absorption performance in the 440 to 470 nm wavelength range are required. Considering this, this experimental example measured absorption values ​​at a wavelength of 450 nm.

[0299]

[0300] Core Ag molar ratio (mol %) ① Core Cu molar ratio (mol %) ② Ag / (Ag + Cu) molar ratio ① / (① + ②) Emission wavelength peak (nm) Absorption value (@450 nm) Half width (nm) Quantum efficiency (%) Comparative example 1 --- 660.2 0.45 56.0 75.2 Comparative example 219.2 15.7 0.5 5 20.0 0.2 7 45.8 5 0.2 Example 10.1 7 17.4 0.0 16 40.0 0.5 15 1.0 7 9.9 Example 20.4 9 16.8 0.0 36 32.1 0.5 0 5 0.3 8 2.2 Example 30.9 3 17.6 0.0 5 6 17.4 0.4 8 3 8 2.1 Example 41.2917.10.07605.30.4745.083.0Example 51.8616.70.10582.70.4644.581.8Example 62.8516.20.15570.50.4442.282.4Example 74.1216.50.20557.90.4240.084.1Example 85.4816.40.25545.20.3937.386.8Example 97.0816.50.30539.70.3836.487.0Example 108.7316.20.35530.40.3733.390.7Example 1110.6015.90.40525.50.3631.891.0Example 1215.9016.00.50519.40.3531.790.8Example 130.1717.10.01645.10.5155.182.0Example 141.8116.50.10635.80.4953.281.1Example 157.0316.40.30613.70.4851.484.6Example 1615.715.80.50557.20.4149.288.4Example 170.1717.30.01634.10.4954.086.9Example 181.8516.80.10616.80.4852.487.6Example 196.9016.20.30601.00.4748.988.9Example 2015.715.70.50548.10.4545.190.2

[0301]

[0302] Quantum dots were manufactured according to the examples of the present disclosure and the comparative examples described above. Referring to Table 1, comparing Comparative Example 1 and Examples 1 to 12 in Table 1, it can be seen that the emission wavelength of Examples 1 to 12 is blue shifted compared to Comparative Example 1. This is because the energy level of Ag is located farther from the valence band than the energy level of Cu, so that the quantum dots containing Cu, In, Ga, and S, which contain Ag, emit higher energy. In addition, it can be confirmed that the quantum efficiency is excellent, which shows that the quantum efficiency is further increased by Ag passivating the internal defects present in the core containing Cu, In, Ga, and S. These results can be said to be desirable features that can be applied to quantum dots for display use.

[0303] In addition, the absorption value may increase as Ag is included in the present disclosure. When comparing Examples 1 to 5, 13 to 15, and 17 to 19, which are in the red wavelength range of 580 nm to 660 nm, with Comparative Example 1, it can be confirmed that the 450 nm absorption value is improved by at least 102% to at most 113%, and when comparing Examples 6 to 12, 16, and 20, which are in the green wavelength range of 510 nm to less than 580 nm, with Comparative Example 2, it can be confirmed that the 450 nm absorption value has a high absorption rate of at least 129% to at most 170%. This is believed to be a result of the characteristic that Ag has a higher absorption coefficient than Cu.

[0304] However, when Comparative Example 2 is compared with Examples 1 to 12, it can be seen that when the molar ratio of Ag to Group I elements exceeds 0.5, the half-width increases and the quantum efficiency decreases. It is believed that when the molar ratio of Ag to Group I elements exceeds 0.5, it is difficult to remove the remaining Ag precursor during the purification step, and accordingly, the unremoved Ag acts as a defect, preventing the shell from being effectively synthesized.

[0305] In the above-described examples, CuAgInGaS / ZnS and CuAgInGaS / GaS, CuAgInGaS / ZnSe quantum dots were representatively described. However, even CuAgInGaS / ZnS and CuInGaS, CuAgInGaS / ZnSe quantum dots containing Ag, which are composed of multi-layered shells including not only a single shell but also a second shell or more, can improve luminescence efficiency for the same reason as described above.

[0306] Embodiments of the present disclosure can provide a quantum dot having excellent luminescence efficiency by adding an Ag element to a core including Cu, In, Ga, and S, a method for producing the quantum dot, an organic composition of the quantum dot, and an electronic device.

[0307] Embodiments of the present disclosure can provide a quantum dot capable of improving the absorption of the quantum dot by adding an Ag element to a core including Cu, In, Ga, and S, a method for producing the quantum dot, an organic composition of the quantum dot, and an electronic device.

[0308] The above description is merely illustrative of the present invention, and those skilled in the art will appreciate that various modifications may be made without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in this specification are intended to illustrate, not limit, the present invention, and the spirit and scope of the present invention are not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all techniques within a scope equivalent thereto should be interpreted as being included within the scope of the present invention.

[0309] [Explanation of symbols]

[0310] 10: Quantum Dot 12: Core

[0311] 13: Nanostructure 14: First shell

[0312] 16: Second shell 18: Third shell

[0313] 100: Electronic device 110: Color conversion member

[0314] 120: Light source 130: Substrate

[0315] 200: Light-emitting diode 210: Anode

[0316] 220: Middle layer 230: Cathode

[0317]

[0318] CROSS-REFERENCE TO RELATED APPLICATION

[0319] This patent application claims priority under 35 USC §119(a) to Korean Patent Application No. 10-2023-0073848, filed in Korea on June 8, 2023, and Korean Patent Application No. 10-2024-0064214, filed in Korea on May 17, 2024, the entire contents of which are incorporated herein by reference. This patent application also claims priority in countries other than the United States for the same reasons, the entire contents of which are incorporated herein by reference.

Claims

1. A core containing Cu, In, Ga and S; and A nanostructure comprising a shell disposed on the core; and The above core has Ag added, The above core is a quantum dot having a molar ratio of Ag to group I elements of 0.01 or more and 0.5 or less.

2. In paragraph 1, The above core is a quantum dot having a molar ratio of Ag to group I elements of 0.1 or more and 0.5 or less.

3. In paragraph 1, Quantum dots with an emission wavelength of 500 nm to 700 nm.

4. In paragraph 3, The absorption value at 450 nm of quantum dots with an emission wavelength of 500 to 580 nm is 0.35 or more, A quantum dot having an absorption value of 0.45 or more at 450 nm and an emission wavelength of 580 to 700 nm.

5. In paragraph 1, The above core is a quantum dot manufactured by heating a precursor solution and then injecting Ag.

6. In paragraph 1, A quantum dot in which the internal defects present in the core are passivated by the Ag.

7. In paragraph 1, A quantum dot in which Ag is placed at a defective position of Cu in the crystal structure of the core.

8. In paragraph 1, The shell comprises at least one selected from a group I element, a group II element or a group III element and a group VI element, The above group I element includes at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, The above group II element includes at least one selected from Be, Mg, Ca, Sr, Zn, Cd, and Hg, The above group III element includes at least one selected from Al, Ga, In and Tl, A quantum dot comprising at least one element of Group VI selected from S, Se, and Te.

9. In paragraph 1, The above shell is, A first shell disposed on the core and including at least one selected from a group I element, a group II element, and a group III element and a group VI element; and A second shell is disposed in the first shell and includes at least one selected from a group I element, a group II element, and a group III element and a group VI element, The above group I element includes at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, The above group II element includes at least one selected from Be, Mg, Ca, Sr, Zn, Cd, and Hg, The above group III element includes at least one selected from Al, Ga, In and Tl, A quantum dot comprising at least one element of Group VI selected from S, Se, and Te.

10. In paragraph 9, The above shell is AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS, NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaSe, AuGaTe, AgInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe. AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe, KGaSTe. CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaGaSe, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe, AgCuGaS, AgCuGaSe,A quantum dot comprising at least one of AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe,MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

11. A precursor solution preparation step of preparing a precursor solution by injecting a copper precursor, an indium precursor, a gallium precursor, a sulfur precursor, and a solvent into a first reactor and reacting them; A precursor solution temperature raising step for heating the precursor solution; A core manufacturing step of manufacturing a core by injecting a silver precursor into the heated precursor solution and reacting the silver precursor; and A shell manufacturing step is included, which involves injecting the core into a second reactor equipped with a precursor containing a specific element and reacting the core to manufacture a shell. The above core is a method for manufacturing a quantum dot in which the molar ratio of Ag to group I elements is 0.01 or more and 0.5 or less.

12. In paragraph 11, The shell comprises at least one selected from a group I element, a group II element or a group III element and a group VI element, The above group I element includes at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, The above group II element includes at least one selected from Be, Mg, Ca, Sr, Zn, Cd, and Hg, The above group III element includes at least one selected from Al, Ga, In and Tl, A method for manufacturing a quantum dot, wherein the above group VI element includes at least one selected from S, Se, and Te.

13. In paragraph 11, The above shell is, A first shell disposed on the core and including at least one selected from a group I element, a group II element, and a group III element and a group VI element; and A second shell is disposed in the first shell and includes at least one selected from a group I element, a group II element, and a group III element and a group VI element, The above group I element includes at least one selected from Li, Na, K, Rb, Cs, Cu, Ag, and Au, The above group II element includes at least one selected from Be, Mg, Ca, Sr, Zn, Cd, and Hg, The above group III element includes at least one selected from Al, Ga, In and Tl, A method for manufacturing a quantum dot, wherein the above group VI element includes at least one selected from S, Se, and Te.

14. In paragraph 12, The above shell is AIS, AISe, AITe, AISeS, AISeTe, AITeS, GaS, GaSe, GaTe, GaSeS, GaSeTe, GaTeS, InS, InSe, InTe, InSeS, InSeTe, InTeS, TiS, TiSe, TiTe, TiSeS, TiSeTe, TiTeS, LiGaS, LiGaSe, LiGaTe, NaGaS, NaGaSe, NaGaTe, KGaS, KGaSe, KGaTe, CuAlS, CuAlSe, CuAlTe, CuGaS, CuGaSe, CuGaTe, CuInS, CuInSe, CuInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe, AgAlTe, AgGaS, AgGaSe, AgGaTe, AuGaS, AuGaSe, AuGaTe, AgInTe, CuTiS, CuTiSe, CuTiTe, AgAlS, AgAlSe. AuAlS, AuAlSe, AuAlTe, AuInS, AuInSe, AuInTe, AuTiS, AuTiSe, AuTiTe, LiNaGaS, LiNaGaSe, LiNaGaTe, NaGaSeTe, NaGaSSe, NaGaSTe, LiGaSeTe, LiGaSSe, LiGaSTe, KLiGaS, KLiGaSe, KLiGaTe, KNaGaS, KNaGaSe, KNaGaTe, KGaSeTe, KGaSSe, KGaSTe. CuLiGaS, CuLiGaSe, CuLiGaTe, CuNaGaS, CuNaGaSe, CuNaGaTe, CuKGaS, CuKGaSe, CuKGaTe, CuGaSeTe, CuGaSSe, CuGaSTe, AgLiGaS, AgLiGaSe, AgLiGaTe, AgNaAlS, AgNaAlSe, AgNaAlTe, AgNaGaS, AgNaGaSe, AgNaInSe, AgNaInTe, AgNaTiS, AgNaTiSe, AgNaTiTe, AgKGaS, AgKGaSe, AgKGaTe, AgGaSeTe, AgGaSSe, AgGaSTe, AgCuGaS, AgCuGaSe,A method for manufacturing a quantum dot comprising at least one of AgCuGaTe, AgAuGaS, AgAuGaSe, AgAuGaTe, AuLiGaS, AuLiGaSe, AuLiGaTe, AuNaGaS, AuNaGaSe, AuNaGaTe, AuKGaS, AuKGaSe, AuKGaTe, AuGaSeTe, AuGaSSe, AuGaSTe, AuCuGaS, AuCuGaSe, AuCuGaTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS, MgS, MgSe, MgSeS, MgSeTe, MgTeS, CdS, CdSe, CdSeS, CdSeTe, or CdTeS.

15. A quantum dot composition comprising a curable resin including the quantum dot of paragraph 1.

16. In paragraph 15, A quantum dot composition wherein the above curable resin is a thermosetting resin or a photocurable resin.

17. A display device including a light-emitting diode including a quantum dot composition including a curable resin including the quantum dot of paragraph 1; and An electronic device comprising a control unit for driving the display device.

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