Photoelectric neuromorphic synapse device and manufacturing method therefor

Abstract

The present invention provides a photoelectric neuromorphic synapse device and a manufacturing method therefor. The photoelectric neuromorphic synapse device comprises a substrate, an insulating layer, a charge trapping layer, a tunneling layer, an organic semiconductor layer, a source, and a drain; the insulating layer is formed on the substrate; the charge trapping layer is formed on the insulating layer; the tunneling layer is formed on the charge trapping layer; the organic semiconductor layer is formed on the tunneling layer, and the organic semiconductor layer is used as a channel for carrier transmission; the material of the organic semiconductor layer comprises 2,7-dioctyl[1]benzothieno[3,2-B]benzothiophene; the source and the drain are respectively formed on the organic semiconductor layer. The photoelectric neuromorphic synapse device of the present invention can be excited under low-intensity light to realize various synaptic performance, thereby realizing visual adaptation. The present invention also provides a manufacturing method for a photoelectric neuromorphic synapse device.

Description

Optoelectronic neuromorphic synaptic device and preparation method thereof

[0001] Cross-references

[0002] This application claims priority to Chinese application No. 2023107085368, filed on September 15, 2023. The contents of the above application are incorporated herein by reference. Technical Field

[0003] The present invention relates to the field of semiconductor device process technology, and in particular to a photoelectric neuromorphic synaptic device and a preparation method thereof. Background Art

[0004] Artificial visual perception systems, with their capabilities of recognition, learning, and storage, are attracting increasing attention in next-generation neuromorphic electronics. Humans acquire over 80% of external information through vision. When external information reaches the human eye, photoreceptors within the retina receive visible light signals and convert them into electrical signals, which are then transmitted to visual neurons. Artificial visual perception systems require combining an artificial retina with neuromorphic devices to achieve both perception and computation within the same device.

[0005] Currently, various optoelectronic neuromorphic devices have been studied to develop artificial visual perception systems and realize optoelectronic neuromorphic functions. Optoelectronic neuromorphic computing is gaining increasing attention in the fields of machine learning, image processing, and visual perception. By combining devices with diverse functionalities with optoelectronic neuromorphic devices, the application areas and development directions of artificial synaptic devices can be effectively broadened.

[0006] Visual adaptation is crucial for next-generation biological vision systems, as it can improve adaptability to diverse environments. Various materials, such as carbides and selenides, have been used to fabricate optoelectronic neuromorphic devices. However, these devices require high excitation light intensity and cannot be excited by low-intensity light. Consequently, these devices lack synaptic properties, making visual adaptation difficult to achieve.

[0007] Therefore, it is necessary to provide a novel optoelectronic neuromorphic synaptic device and a preparation method thereof to solve the above-mentioned problems existing in the prior art.

[0008] Summary of the Invention

[0009] The object of the present invention is to provide a photoelectric neuromorphic synaptic device that can be stimulated under low-intensity light to exhibit various synaptic properties and achieve visual adaptation.

[0010] To achieve the above-mentioned purpose, the optoelectronic neuromorphic synaptic device described in the present invention includes a substrate, an insulating layer, a charge trapping layer, a tunneling layer, an organic semiconductor layer, a source electrode and a drain electrode; the insulating layer is formed on the substrate; the charge trapping layer is formed on the insulating layer; the tunneling layer is formed on the charge trapping layer; the organic semiconductor layer is formed on the tunneling layer, and the organic semiconductor layer is used for carrier transport; the material of the organic semiconductor layer includes 2,7-dioctyl[1]benzothieno[3,2-B]benzothiophene; the source electrode and the drain electrode are respectively formed on the organic semiconductor layer.

[0011] The beneficial effects of the optoelectronic neuromorphic synaptic device are:

[0012] The insulating layer is formed on the substrate, the charge trapping layer is formed on the insulating layer, and the tunneling layer is formed on the charge trapping layer, so that the optoelectronic neuromorphic synaptic device has more than 10 5 The switching ratio is greater than 20V, and the storage window is greater than 20V, so that the photoelectric neuromorphic synaptic device has multi-level storage characteristics and reliable retention characteristics; the organic semiconductor layer is formed on the tunneling layer, and the material of the organic semiconductor layer includes 2,7-dioctyl[1]benzothieno[3,2-B]benzothiophene. Since the organic semiconductor layer is highly sensitive to light, the organic semiconductor layer generates a large number of electron-hole pairs under low-intensity light excitation, resulting in an increase in the hole carrier concentration in the organic semiconductor layer, thereby generating a significant photocurrent, thereby changing the current of the source and the drain, so that the The electro-neuromorphic synaptic device can achieve synaptic performance under low-intensity light excitation; the photoelectric neuromorphic synaptic device can change the current of the source and the drain under low-intensity light excitation, so the photoelectric neuromorphic synaptic device generates different currents in different light environments, transmits different electrical signals, expresses synaptic characteristics, achieves visual adaptation, simulates biological visual adaptation function, and provides new impetus for the development of bionic visual perception systems; the organic semiconductor layer is used as a channel for carrier transmission to change the current of the source and the drain to achieve synaptic characteristics; the photoelectric neuromorphic synaptic device is applied with 10 3 After a cycle of voltage, the current in the write and erase states hardly decays, and the optoelectronic neuromorphic synaptic device can achieve stable write and erase and has good electrical stability.

[0013] Optionally, the substrate serves as a bottom gate.

[0014] Optionally, the substrate material includes a heavily doped silicon substrate, which has the beneficial effect that the substrate has good electrical conductivity.

[0015] Optionally, the thickness of the insulating layer is 100 nm to 300 nm. Advantageously, the insulating layer has a good insulating effect within the range of 100 nm to 300 nm, and is less likely to break down under high voltage, thereby preventing device failure.

[0016] Optionally, the material of the insulating layer includes silicon dioxide.

[0017] Optionally, the thickness of the charge trapping layer is 20 nm to 30 nm. The beneficial effect is that the thinner the charge trapping layer is, the better the charge storage capacity is, and the device having the charge trapping layer has a large storage window.

[0018] Optionally, the material of the charge trapping layer includes hafnium oxide.

[0019] Optionally, the thickness of the tunneling layer is 3 nm to 10 nm. The beneficial effect is that the thinner the tunneling layer is, the easier it is to bend when a voltage is applied, thereby facilitating carrier tunneling.

[0020] Optionally, the material of the tunneling layer includes aluminum oxide.

[0021] Optionally, the thickness of the organic semiconductor layer is 30 nm to 80 nm. The beneficial effect is that when the thickness of the organic semiconductor layer is within the range of 30 nm to 80 nm, the organic semiconductor layer has high carrier mobility when used as a channel, thereby achieving good electrical performance.

[0022] Optionally, the thickness of the source electrode and the drain electrode are both 50 nanometers to 100 nanometers.

[0023] Optionally, the source electrode and the drain electrode are both made of gold or platinum.

[0024] Optionally, the photoelectric neuromorphic synaptic device is suitable for a light intensity range of 0.4 mW / cm 2 -0.6mW / cm 2 .

[0025] The present invention also provides a method for preparing an optoelectronic neuromorphic synaptic device, which is used to prepare the optoelectronic neuromorphic synaptic device as described above, comprising the following steps:

[0026] S0: providing the substrate;

[0027] S1: forming the insulating layer on the substrate;

[0028] S2: forming the charge trapping layer on the insulating layer;

[0029] S3: forming the tunneling layer on the charge trapping layer;

[0030] S4: forming the organic semiconductor layer on the tunneling layer;

[0031] S5: forming the source electrode and the drain electrode on the organic semiconductor layer respectively.

[0032] Optionally, in S2, the charge trapping layer is formed on the insulating layer by an atomic layer deposition process, and the temperature of the atomic layer deposition process is 200 degrees Celsius to 400 degrees Celsius.

[0033] Optionally, in S3, the tunneling layer is formed on the charge trapping layer by an atomic layer deposition process, and the temperature of the atomic layer deposition process is 200 degrees Celsius to 400 degrees Celsius.

[0034] Optionally, in S4, the organic semiconductor layer is formed on the tunneling layer by a thermal evaporation deposition process, and the pressure of the thermal evaporation deposition process is 3×10 -6 mbar-8×10 -6 mbar, and the deposition rate of the thermal evaporation deposition process is 0.05 nm / s-0.15 nm / s.

[0035] Optionally, in S5 , the source electrode and the drain electrode are respectively formed on the organic semiconductor layer by a physical vapor deposition process.

[0036] Optionally, the atomic layer deposition process, the thermal evaporation deposition process and the physical vapor deposition process are all performed in nitrogen. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] FIG1 is a schematic structural diagram of an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0038] FIG2 is a flow chart of a method for preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0039] FIG3 is a schematic diagram of step S1 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0040] FIG4 is a schematic diagram of step S2 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0041] FIG5 is a schematic diagram of step S3 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0042] FIG6 is a schematic diagram of step S4 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0043] FIG7 is a schematic diagram of step S5 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0044] FIG8 is a diagram showing the paired pulse enhancement performance of an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0045] FIG9 is a performance diagram of the transition from short-term storage to long-term storage of an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0046] FIG10 is a graph showing the learning behavior of an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention;

[0047] FIG11 is a diagram showing the light adaptability of the optoelectronic neuromorphic synaptic device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0049] In response to the problems existing in the prior art, embodiments of the present invention provide a photoelectric neuromorphic synaptic device that can be stimulated under low-intensity light to exhibit various synaptic properties and achieve visual adaptation.

[0050] To achieve the above-mentioned purpose, the optoelectronic neuromorphic synaptic device described in the present invention includes a substrate, an insulating layer, a charge trapping layer, a tunneling layer, an organic semiconductor layer, a source electrode and a drain electrode; the insulating layer is formed on the substrate; the charge trapping layer is formed on the insulating layer; the tunneling layer is formed on the charge trapping layer; the organic semiconductor layer is formed on the tunneling layer, and the organic semiconductor layer is used for carrier transport; the material of the organic semiconductor layer includes 2,7-dioctyl[1]benzothieno[3,2-B]benzothiophene; the source electrode and the drain electrode are respectively formed on the organic semiconductor layer.

[0051] The advantages of the optoelectronic neuromorphic synaptic device are:

[0052] The insulating layer is formed on the substrate, the charge trapping layer is formed on the insulating layer, and the tunneling layer is formed on the charge trapping layer, so that the optoelectronic neuromorphic synaptic device has more than 10 5 The switching ratio is greater than 20V, and the storage window is greater than 20V, so that the photoelectric neuromorphic synaptic device has multi-level storage characteristics and reliable retention characteristics; the organic semiconductor layer is formed on the tunneling layer, and the material of the organic semiconductor layer includes 2,7-dioctyl[1]benzothieno[3,2-B]benzothiophene. Since the organic semiconductor layer is highly sensitive to light, the organic semiconductor layer generates a large number of electron-hole pairs under low-intensity light excitation, resulting in an increase in the hole carrier concentration in the organic semiconductor layer, thereby generating a significant photocurrent, thereby changing the current of the source and the drain, so that the The electro-neuromorphic synaptic device can achieve synaptic performance under low-intensity light excitation; the photoelectric neuromorphic synaptic device can change the current of the source and the drain under low-intensity light excitation, so the photoelectric neuromorphic synaptic device generates different currents in different light environments, transmits different electrical signals, expresses synaptic characteristics, achieves visual adaptation, simulates biological visual adaptation function, and provides new impetus for the development of bionic visual perception systems; the organic semiconductor layer is used as a channel for carrier transmission to change the current of the source and the drain to achieve synaptic characteristics; the photoelectric neuromorphic synaptic device is applied with 10 3 After a cycle of voltage, the current in the write and erase states hardly decays, and the optoelectronic neuromorphic synaptic device can achieve stable write and erase and has good electrical stability.

[0053] In some embodiments, the substrate serves as a bottom gate.

[0054] In some embodiments, the substrate is made of a heavily doped silicon substrate, which has the advantage that the substrate has good electrical conductivity.

[0055] In some embodiments, the thickness of the insulating layer is 100 nanometers to 300 nanometers.

[0056] In some embodiments, the insulating layer is made of silicon dioxide.

[0057] In some embodiments, the charge trapping layer has a thickness of 20 nm to 30 nm.

[0058] In some embodiments, the material of the charge trapping layer includes hafnium oxide.

[0059] In some embodiments, the tunneling layer has a thickness of 3 nanometers to 10 nanometers.

[0060] In some embodiments, the tunneling layer is made of aluminum oxide.

[0061] In some embodiments, the thickness of the organic semiconductor layer is 30 nanometers to 80 nanometers.

[0062] In some embodiments, the thickness of the source electrode and the drain electrode is 50 nanometers to 100 nanometers.

[0063] In some embodiments, the source electrode and the drain electrode are both made of gold or platinum.

[0064] In some embodiments, the optoelectronic neuromorphic synaptic device is suitable for light intensity ranging from 0.4 mW / cm 2 -0.6mW / cm 2 .

[0065] The present invention also provides a method for preparing an optoelectronic neuromorphic synaptic device, which is used to prepare the optoelectronic neuromorphic synaptic device as described above, comprising the following steps:

[0066] S0: providing the substrate;

[0067] S1: forming the insulating layer on the substrate;

[0068] S2: forming the charge trapping layer on the insulating layer;

[0069] S3: forming the tunneling layer on the charge trapping layer;

[0070] S4: forming the organic semiconductor layer on the tunneling layer;

[0071] S5: forming the source electrode and the drain electrode on the organic semiconductor layer respectively.

[0072] In some embodiments, in S2, the charge trapping layer is formed on the insulating layer by an atomic layer deposition process, and the temperature of the atomic layer deposition process is 200 degrees Celsius to 400 degrees Celsius.

[0073] In some embodiments, in S3, the tunneling layer is formed on the tunneling layer by an atomic layer deposition process, and the temperature of the atomic layer deposition process is 200 degrees Celsius to 400 degrees Celsius.

[0074] In some embodiments, in S4, the organic semiconductor layer is formed on the tunneling layer by a thermal evaporation deposition process, and the pressure of the thermal evaporation deposition process is 3×10 -6 mbar-8×10 -6 mbar, and the deposition rate of the thermal evaporation deposition process is 0.05 nm / s-0.15 nm / s.

[0075] In some embodiments, in S5 , the source electrode and the drain electrode are respectively formed on the organic semiconductor layer by a physical vapor deposition process.

[0076] In some embodiments, the atomic layer deposition process, the thermal evaporation deposition process, and the physical vapor deposition process are all performed in nitrogen.

[0077] FIG1 is a schematic structural diagram of an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention. Referring to FIG1 , the optoelectronic neuromorphic synaptic device according to the present invention comprises a substrate 100; an insulating layer 101 formed on the substrate 100; a charge trapping layer 102 formed on the insulating layer 101; a tunneling layer 103 formed on the charge trapping layer 102; an organic semiconductor layer 104 formed on the tunneling layer 103, wherein the organic semiconductor layer 104 is 2,7-dioctyl[1]benzothieno[3,2-B]benzothiophene; and a source electrode 105 and a drain electrode 106 formed on the organic semiconductor layer 104.

[0078] The optoelectronic neuromorphic synaptic device of the present invention is prepared by the method for preparing the optoelectronic neuromorphic synaptic device of the present invention. FIG2 is a flow chart of the method for preparing the optoelectronic neuromorphic synaptic device according to an embodiment of the present invention. As shown in FIG2 , the method for preparing the optoelectronic neuromorphic synaptic device includes the following steps:

[0079] FIG3 is a schematic diagram of step S1 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention.

[0080] Step S1: As shown in FIG3 , a heavily doped silicon substrate is provided as substrate 100. The heavily doped silicon substrate serves as a bottom gate, which can apply a voltage to accelerate the adaptation process of the optoelectronic neuromorphic synaptic device to light, avoid the stimulation of harmful light, and achieve visual adaptation performance.

[0081] Figure 4 is a schematic diagram of step S2 of preparing a photoelectric neuromorphic synaptic device according to an embodiment of the present invention.

[0082] Step S2: As shown in Figure 4, a thermal growth process is used to cover the substrate 100 with SiO2 with a thickness of 200 nm as the insulating layer 101, and the substrate 100 covered with the insulating layer 101 is cleaned with acetone, isopropyl alcohol and deionized water in sequence, and then dried in nitrogen.

[0083] FIG5 is a schematic diagram of step S3 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention.

[0084] Step S3: Referring to FIG. 5 , an atomic layer deposition process is used to deposit HfO 2 with a thickness of 24 nm on the insulating layer 101 at a temperature of 300 degrees Celsius as the charge trapping layer 102 .

[0085] FIG6 is a schematic diagram of step S4 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention.

[0086] Step S4: Referring to FIG. 6 , an atomic layer deposition process is used to deposit Al 2 O 3 with a thickness of 5 nm on the charge trapping layer 102 at a temperature of 300 degrees Celsius as the tunneling layer 103 .

[0087] FIG7 is a schematic diagram of step S5 of preparing an optoelectronic neuromorphic synaptic device according to an embodiment of the present invention.

[0088] Step S5: As shown in FIG7 , a thermal evaporation deposition process is used to deposit 5×10 -6 Under a pressure of 100 mbar, 2,7-dioctyl[1]benzothieno[3,2-B]benzothiophene with a thickness of 50 nm is deposited on the tunneling layer 103 at a rate of 0.1 nm / s as the organic semiconductor layer 104. The organic semiconductor layer is sensitive to light, so that the optoelectronic neuromorphic synaptic device can simulate the synaptic behavior of the human brain through optical modulation under low-intensity light excitation, such as paired pulse potentiation, conversion of short-term storage to long-term storage, and learning experience behavior.

[0089] Step S6: Using a physical vapor deposition process, Au with a thickness of 70 nm is deposited on opposite sides of the organic semiconductor layer 104 to form the source electrode 105 and the drain electrode 106; the organic semiconductor layer 104 serves as a channel for transmitting all carriers generated by the organic semiconductor layer 104 under low-intensity light excitation, changing the current of the source electrode 105 and the drain electrode 106, and realizing postsynaptic current changes, as shown in Figure 1.

[0090] The optoelectronic neuromorphic synaptic device of the present invention can achieve synaptic performance through optical modulation under low-intensity light excitation, which is described in detail below through specific embodiments:

[0091] Example 1

[0092] The short-term synaptic plasticity of the optoelectronic neuromorphic synaptic device can be achieved by optical modulation under low-intensity light excitation. An important manifestation of short-term synaptic plasticity is paired pulse potentiation (PPF). The optoelectronic neuromorphic synaptic device is placed under 0.5 mW / cm 2At a light intensity of , a light pulse was applied to the photoelectric neuromorphic synaptic device. After an interval of 500 milliseconds, the same light pulse was applied to the photoelectric neuromorphic synaptic device again. Referring to FIG8 , the ordinate of FIG8 represents the excitatory postsynaptic current (EPSC) value. The postsynaptic current induced by the second light pulse in the photoelectric neuromorphic synaptic device was significantly higher than that induced by the first light pulse, indicating that storage in the photoelectric neuromorphic synaptic device was enhanced and short-term synaptic plasticity was achieved.

[0093] Example 2

[0094] The conversion of the short-term memory (STM) to long-term memory (LTM) of the optoelectronic neuromorphic synaptic device can be achieved by optical modulation under low-intensity light excitation.

[0095] The transition from short-term memory (STM) to long-term memory (LTM) can be achieved by changing the number of light pulses. 2 Under a light intensity of , the same light pulses were applied to the optoelectronic neuromorphic synaptic device, and the number of light pulses was gradually increased from 1 to 15. Referring to FIG9 , the ordinate of FIG9 represents the change in excitatory postsynaptic current (EPSC). As the number of applied light pulses increased, the excitatory postsynaptic current (EPSC) induced by the optoelectronic neuromorphic synaptic device gradually increased and lasted for a longer period of time. This behavior is similar to the improvement of memory level and consolidation of memory strength through repeated learning in an organism.

[0096] At the same time, by changing the pulse width and pulse frequency of the optical pulse applied to the optoelectronic neuromorphic synaptic device, the transition from short-term memory (STM) to long-term memory (LTM) can also be achieved. 2 Under a light intensity of , light pulses were applied to the optoelectronic neuromorphic synaptic device to reach an initial storage level. After an interval of 100 seconds, light pulses were applied to the optoelectronic neuromorphic synaptic device again to re-reach the initial storage level. Referring to FIG10 , the ordinate of FIG10 represents the current value of the excitatory postsynaptic current (EPSC). Applying 42 light pulses to the optoelectronic neuromorphic synaptic device can reach an initial storage level of 35 nA. After 100 seconds of forgetting, only 28 light pulses need to be applied to the optoelectronic neuromorphic synaptic device to re-reach the initial storage level. This is equivalent to forgotten knowledge in an organism, which can be regained with a brief review.

[0097] Example 3

[0098] The visual adaptation of the optoelectronic neuromorphic synaptic device can be achieved through optical modulation under low-intensity light excitation.

[0099] By applying 0.765 mW / cm 2 The optoelectronic neuromorphic synaptic device was exposed to strong light to observe its adaptation to harmful light. Referring to FIG11 , where the vertical axis represents the drain current (IDS), a significant current suppression effect was observed when the bottom gate voltage of the optoelectronic neuromorphic synaptic device gradually increased from a floating gate state (0V) to -0.8V. This accelerated the device's adaptation to light and prevented harmful light stimulation.

[0100] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. An optoelectronic neuromorphic synaptic device, characterized in that: It includes a substrate, an insulating layer, a charge trapping layer, a tunneling layer, an organic semiconductor layer, a source electrode and a drain electrode; The insulating layer is formed on the substrate; The charge trapping layer is formed on the insulating layer; The tunneling layer is formed on the charge trapping layer; The organic semiconductor layer is formed on the tunneling layer, and the organic semiconductor layer serves as a channel for carrier transmission; The material of the organic semiconductor layer includes 2,7-dioctyl[1]benzothieno[3,2-B]benzothiophene; The source electrode and the drain electrode are respectively formed on the organic semiconductor layer.

2. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The thickness of the insulating layer is 100 nanometers to 300 nanometers.

3. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The material of the insulating layer includes silicon dioxide.

4. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The charge capture layer has a thickness of 20 nanometers to 30 nanometers.

5. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The material of the charge trapping layer includes hafnium oxide.

6. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The thickness of the tunneling layer is 3 nanometers to 10 nanometers.

7. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The material of the tunneling layer includes aluminum oxide.

8. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The thickness of the organic semiconductor layer is 30 nanometers to 80 nanometers.

9. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The thickness of the source electrode and the drain electrode are both 50 nanometers to 100 nanometers.

10. The optoelectronic neuromorphic synaptic device according to claim 1, characterized in that: The source electrode and the drain electrode are made of any one of gold and platinum.

11. A method for preparing an optoelectronic neuromorphic synaptic device, characterized in that: The method for preparing the optoelectronic neuromorphic synaptic device according to any one of claims 1 to 10 comprises the following steps: S0: providing the substrate; S1: forming the insulating layer on the substrate; S2: forming the charge trapping layer on the insulating layer; S3: forming the tunneling layer on the charge trapping layer; S4: forming the organic semiconductor layer on the tunneling layer; S5: forming the source electrode and the drain electrode on the organic semiconductor layer respectively.

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