Semiconductor device

Abstract

Provided is a semiconductor device for which a reduction in size can be achieved while maintaining insulation between terminals.　According to the present invention, a case affixes a first terminal (10), a second terminal (20), and a first insulating member (30), while exposing respective exposure regions of the first terminal (10), the second terminal (20), and the first insulating member (30). A second insulating member (40) covers second portions (31a2, 31c2) that are less than or equal to a predetermined distance of the front surface of the exposure region of the second terminal (20) from terminal edge portions (11a, 11c) and a terminal outer end portion (11d) of the exposure region of the first terminal (10). The second portions (31a2, 31c2) of the first insulating member (30) extend outward from the terminal edge portions (11a, 11c) and the terminal outer end portion (11d) of the first terminal (10).

Description

Semiconductor Devices

[0001] The present invention relates to a semiconductor device.

[0002] The terminal portion of the semiconductor device includes an external terminal, an insulating sheet, and another external terminal stacked in a staircase pattern from bottom to top. The back surface of the end along the outer edge of the other external terminal on the top layer is closer to the front surface than the back surface of the other end as it approaches the tip. This reduces the electric field strength at the outer end of the external terminal on the bottom layer (see, for example, Patent Document 1). Furthermore, the two main terminals included in the semiconductor device include protrusions protruding from the encapsulating resin body. These main terminals are arranged so as to cancel out magnetic fluxes generated when a main current flows (see, for example, Patent Document 2). Furthermore, a conductive connecting material containing a resin composition sandwiched between metal foils is placed between the terminals, heated to adjust the distance between the terminals, and the resin composition is cured at a temperature below the melting point of the metal foil. This allows for good electrical connection between the terminals and high insulation reliability between adjacent terminals (see, for example, Patent Document 3).

[0003] Positive and negative external electrodes are bonded to plate-shaped positive and negative external connection terminals included in a semiconductor device over the entire opposing surfaces. The positive and negative external connection terminals and the positive and negative external electrodes are electrically connected with their surfaces parallel to each other and with electrical insulation provided between the external connection terminals and the external electrodes. This reduces the resistance at the junctions between the external connection terminals and the external electrodes, ensuring insulation even when the distance between the external connection terminals and the external electrodes is small (see, for example, Patent Document 4).

[0004] The semiconductor device includes first and second terminals that protrude in the same direction from a sealing body and are adjacent and spaced apart. The first and second terminals include first and second exposed portions that are exposed to the outside from the sealing body, and the sealing body sides of the first and second exposed portions are covered with first and second insulating coatings, respectively. The distance from the tip of the second coating to the sealing body is longer than the distance from the tip of the first coating to the sealing body. This makes it possible to ensure insulation performance between the terminals while suppressing increases in device size and inductance (see, for example, Patent Document 5).

[0005] In a laminated portion in which three electrode lead-out terminals are stacked with insulating resin sheets interposed therebetween, the edge of one electrode lead-out terminal adjacent to the insulating resin sheet is positioned inside the edge of the insulating resin sheet, and the edge of the other electrode lead-out terminal adjacent to the insulating resin sheet is positioned either coincident with the edge of the insulating resin sheet or outside that position, thereby ensuring a sufficient creepage insulation distance between the terminals (see, for example, Patent Document 6).

[0006] The semiconductor device includes a laminate structure in which an anode conductor, an insulating sheet, and a cathode conductor are arranged in this order. An insulating cap is disposed between the anode conductor and the insulating sheet, and has a flange portion for ensuring creepage distance and a barrier portion for ensuring clearance. This effectively reduces inductance and suppresses surge voltage, thereby eliminating the need for fuses and snubber circuits (see, for example, Patent Document 7). The semiconductor device also includes a mica insulating member sandwiching conductor plates of opposite polarity, encompassing the edges of each conductor plate. A resin insulating material is filled between the mica insulating member and the connection through-holes. Furthermore, mica sheets are attached to the front and back of the laminated conductor plate. This results in a laminated conductor plate that is less susceptible to insulation damage (see, for example, Patent Document 8).

[0007] JP 2022-125790 A JP 2019-207922 A JP 2011-165879 A JP 2007-234693 A JP 2021-180252 A JP 2010-157565 A JP 2005-065414 A JP 2005-130542 A

[0008] An object of the present invention is to provide a semiconductor device that can maintain insulation between terminals and can be made smaller.

[0009] According to one aspect of the present invention, there is provided a semiconductor device comprising: a first insulating member having a plate-shaped first terminal; a plate-shaped second terminal opposite the first terminal; a first portion sandwiched between the first terminal and the second terminal; and a second portion extending a predetermined distance outward from an end of a bottom surface of the first terminal that is parallel to the second terminal; a second insulating member, a portion of which is disposed between the first terminal and the second terminal and contacts the first portion and the second portion of the first insulating member; and a case that fixes the first terminal, the second insulating member, the first insulating member, and the second terminal.

[0010] The second insulating member may be disposed between the first terminal and the first insulating member, and may enclose and fix the first insulating member and the second terminal.

[0011] The second insulating member may be a heat-shrinkable tube or an epoxy resin. An end of the first terminal facing the second insulating member may be chamfered, and the chamfered end may extend outward while being spaced apart from the second portion.

[0012] The first terminal and the second terminal may have the same width, and the second portion of the first insulating member may extend outward beyond an end of the second terminal. The second insulating member may have a slit on a surface opposite to the second terminal.

[0013] The second insulating member may be disposed between the first insulating member and the second terminal. The second insulating member may enclose the second terminal, and an end of the first insulating member may be flush with an end of the second insulating member.

[0014] The second portion may have a width of 0.5 mm or more. The first insulating member may have a higher dielectric breakdown strength than the second insulating member.

[0015] The first insulating member may have a higher Young's modulus than the second insulating member. The direction of current flow in the first terminal may be opposite to the direction of current flow in the second terminal.

[0016] The case may further include a third insulating member having a plate-shaped third terminal facing the surface of the second terminal opposite the first terminal, a third portion sandwiched between the second terminal and the third terminal, and a fourth portion extending a predetermined distance outward from the end of the bottom surface of the second terminal parallel to the third terminal, and a fourth insulating member, a portion of which is arranged between the second terminal and the third terminal and contacts the third portion and the fourth portion of the third insulating member, and the case may further fix the third terminal, the third insulating member, and the fourth insulating member.

[0017] The fourth insulating member may enclose and fix the third insulating member and the third terminal. The fourth insulating member may be a heat-shrinkable tube or an epoxy resin. The fourth insulating member may be disposed between the second terminal and the third insulating member.

[0018] The third portion may have a width of 0.5 mm or more. The direction of current flow in the third terminal may be opposite to the direction of current flow in the second terminal.

[0019] Furthermore, the fourth insulating member may enclose the third terminal, the fourth insulating member may be disposed between the third insulating member and the third terminal, and an end of the third insulating member may be flush with an end of the fourth insulating member.

[0020] The above summary of the invention does not list all of the necessary features of the present invention, and subcombinations of these features may also constitute inventions.

[0021] According to the disclosed technology, it is possible to maintain insulation between terminals, suppress a decrease in reliability, and achieve miniaturization.

[0022] The above and other objects, features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings illustrating preferred embodiments of the present invention.

[0023] Perspective view of the semiconductor device according to the first embodiment. Side view of the semiconductor device according to the first embodiment. Planar view of the semiconductor device according to the first embodiment. Planar view of the stacked terminal portion included in the semiconductor device according to the first embodiment. First cross-sectional view in the longitudinal direction of the stacked terminal portion included in the semiconductor device according to the first embodiment. Second cross-sectional view in the longitudinal direction of the stacked terminal portion included in the semiconductor device according to the first embodiment. Cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device according to the first embodiment. Diagram for explaining the electric field strength of the stacked terminal portion of the first comparative example. Cross-sectional view in the short-side direction of the stacked terminal portion of the second comparative example. Cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device according to the first embodiment (modified example 1-1). Cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device according to the first embodiment (modified example 1-2). Cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device according to the first embodiment (modified example 1-3). Planar view of the stacked terminal portion included in the semiconductor device according to the second embodiment. First cross-sectional view in the longitudinal direction of the stacked terminal portion included in the semiconductor device according to the second embodiment. Cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device according to the second embodiment. Side view of the semiconductor device according to the third embodiment. Planar view of the semiconductor device according to the third embodiment. Cross-sectional view in the longitudinal direction of the stacked terminal portion included in the semiconductor device according to the third embodiment. Cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device according to the third embodiment. Cross-sectional view in the short-side direction of the stacked terminal portion included in the semiconductor device according to the third embodiment (modified example 3-1).

[0024] The following describes embodiments with reference to the drawings. In the following description, the terms "front surface" and "upper surface" refer to the X-Y plane facing upward (+Z direction) in the semiconductor device 1 or 1a shown in the figure. Similarly, "up" refers to the upward (+Z direction) direction in the semiconductor device 1 or 1a shown in the figure. The terms "back surface" and "lower surface" refer to the X-Y plane facing downward (-Z direction) in the semiconductor device 1 or 1a shown in the figure. Similarly, "lower" refers to the downward (-Z direction) direction in the semiconductor device 1 or 1a shown in the figure. Similar orientations are used in other figures as necessary. The terms "front surface," "upper surface," "upper," "back surface," "lower surface," "lower," and "side surface" are merely convenient expressions for specifying relative positional relationships and do not limit the technical concept of the present invention. For example, "upper" and "lower" do not necessarily refer to the vertical direction relative to the ground. In other words, the "upper" and "lower" directions are not limited to the direction of gravity. In the following description, the term "main component" refers to a component containing 80 vol% or more of a component. Furthermore, "substantially the same" may be within a range of ±10%. Furthermore, "perpendicular" and "parallel" may be within a range of ±10°. "Up" and "down" do not necessarily mean the vertical direction relative to the ground. In other words, the directions of "up" and "down" are not limited to the direction of gravity. Furthermore, in the following description, "main component" refers to a component containing 80 vol% or more.

[0025] [First Embodiment] A semiconductor device 1 according to a first embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a perspective view of the semiconductor device according to the first embodiment, FIG. 2 is a side view of the semiconductor device according to the first embodiment, and FIG. 3 is a plan view of the semiconductor device according to the first embodiment. Note that FIG. 2 is a side view of the semiconductor device 1 of FIG. 1 as seen in the +Y direction. FIG. 3 is a plan view of the semiconductor device 1 of FIG. 1 as seen in the -Z direction.

[0026] The semiconductor device 1 may include at least a case 2, output terminals 3, control terminals 4, and a stacked terminal unit 5. The case 2 encapsulates an insulating circuit board and a semiconductor chip (both not shown). Such a case 2 may be primarily composed of, for example, a thermosetting resin. Examples of the thermosetting resin include epoxy resin, phenolic resin, maleimide resin, and polyester resin. A filler may be added to the thermosetting resin. The filler may be, for example, ceramic. Ceramics are insulating and have high thermal conductivity. The case 2 is molded, for example, into a cubic shape using a thermosetting resin, and includes side surfaces 2a to 2d, a top surface 2e, and a bottom surface 2f. The case 2 may be substantially cubic. The corners may be rounded or chamfered. The top surface 2e and the bottom surface 2f form a rectangular shape in a plan view. The side surfaces 2a to 2d surround the top surface 2e and the bottom surface 2f in order in a plan view. The side surfaces 2a and 2c are parallel to the longitudinal direction (±Y direction) of the case 2 (corresponding to the long sides of the case 2), and the side surfaces 2b and 2d are parallel to the lateral direction (±X direction) of the case 2 (corresponding to the short sides of the case 2).

[0027] The insulating circuit board and semiconductor chip sealed in the case 2 will now be described. The insulating circuit board includes an insulating plate, a conductive pattern formed on the front surface of the insulating plate, and a metal plate formed on the back surface of the insulating plate. The insulating plate and the metal plate are rectangular in plan view. The corners of the insulating plate and the metal plate may be round-chamfered or C-chamfered. The size of the metal plate is smaller than the size of the insulating plate in plan view, and it is formed inside the insulating plate.

[0028] The insulating plate is made of a material that has insulating properties and excellent thermal conductivity. Such an insulating plate is made of ceramics, such as aluminum oxide, aluminum nitride, and silicon nitride.

[0029] A plurality of conductive patterns are formed on the front surface of the insulating plate. Each of the plurality of conductive patterns has a predetermined shape. A semiconductor chip is mounted on one of the plurality of conductive patterns, and the semiconductor chip and the plurality of conductive patterns form a circuit that realizes the desired function of the semiconductor device 1. The conductive patterns are made of a metal with excellent conductivity. Such metals are, for example, copper, aluminum, or an alloy containing at least one of these as a main component. The surfaces of the conductive patterns may be plated to improve corrosion resistance. In this case, the plating material used is, for example, nickel, a nickel-phosphorus alloy, or a nickel-boron alloy.

[0030] Such conductive patterns are formed on the front surface of the insulating plate as follows: a metal layer is formed on the front surface of the insulating plate, and then a process such as etching is performed on this metal layer to obtain multiple conductive patterns of predetermined shapes. Alternatively, multiple conductive patterns may be pre-cut from the metal layer and then pressure-bonded to the front surface of the insulating plate. The corners of the multiple conductive patterns may be R-chamfered or C-chamfered.

[0031] The metal plate is formed on the back surface of the insulating plate. The metal plate is rectangular. The area of ​​the metal plate in a plan view is smaller than the area of ​​the insulating plate and larger than the area of ​​the region in which the multiple conductive patterns are formed. The corners of the metal plate may be round-chamfered or C-chamfered. The metal plate is smaller than the size of the insulating plate and is formed on the entire surface of the insulating plate except for the edges. This metal is, for example, copper, aluminum, or an alloy containing at least one of these. The surface of the metal plate may be plated to improve corrosion resistance. In this case, the plating material used is, for example, nickel, a nickel-phosphorus alloy, or a nickel-boron alloy.

[0032] As an insulating circuit board having such a configuration, for example, a DCB (Direct Copper Bonding) board or an AMB (Active Metal Brazed) board may be used.

[0033] The semiconductor chip includes a power device element made of silicon. The power device element is, for example, an RC (Reverse-Conducting)-IGBT (Insulated Gate Bipolar Transistor). The RC-IGBT combines the functions of an IGBT, which is a switching element, and an FWD (Free Wheeling Diode), which is a diode element. The front surface of such a semiconductor chip is provided with a control electrode (gate electrode) and an output electrode (emitter electrode), which is a main electrode. The back surface of the semiconductor chip is provided with an input electrode (collector electrode), which is a main electrode. The control electrode may be provided, for example, along one side of the front surface of the semiconductor chip (or in the center of the side). The output electrode may be provided in the center of the front surface of the semiconductor chip. The input electrode may be provided including the center of the back surface of the semiconductor chip.

[0034] Furthermore, the semiconductor chip may use a pair of a switching element and a diode element instead of an RC-IGBT. The switching element is, for example, an IGBT or a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Such a semiconductor chip has, for example, an input electrode (drain electrode or collector electrode) as a main electrode on the back surface, and a control electrode (gate electrode) and an output electrode (source electrode or emitter electrode) as a main electrode on the front surface. The diode element is, for example, an SBD (Schottky Barrier Diode) or a PiN (P-intrinsic-N) diode, which are used as the FWD. Such a semiconductor chip has, for example, an output electrode (cathode electrode) as a main electrode on the back surface, and an input electrode (anode electrode) as a main electrode on the front surface.

[0035] The semiconductor chip may also include a power MOSFET as a switching element. In this semiconductor chip, the body diode of the power MOSFET may perform a function similar to that of the FWD of the RC-IGBT. Such a semiconductor chip has a control electrode (gate electrode) and an output electrode (source electrode) as a main electrode on its front surface. The semiconductor chip has an input electrode (drain electrode) as a main electrode on its back surface. Such a semiconductor chip may preferably be made of silicon carbide.

[0036] The semiconductor chip is bonded to a predetermined conductive pattern on the insulating circuit board by a bonding material, and the control electrodes and output electrodes of the semiconductor chip may be connected to the predetermined conductive pattern by wires.

[0037] The joining member may be solder or a metal sintered material. Lead-free solder is used as the solder. Lead-free solder is primarily composed of an alloy containing at least two of tin, silver, copper, zinc, antimony, indium, and bismuth. Furthermore, the solder may contain additives. Examples of additives include nickel, germanium, cobalt, and silicon. The inclusion of additives in the solder improves wettability, gloss, and bonding strength, thereby improving reliability. The metal sintered material may be primarily composed of at least one of iron, copper, aluminum, titanium, nickel, tungsten, and molybdenum.

[0038] The output terminal 3 is electrically connected to a predetermined conductive pattern on the insulating circuit board within the case 2 and extends from the side surface 2b of the case 2 to the outside. The output terminal 3 extends perpendicularly (in the -X direction) to the side surface 2b. The predetermined conductive pattern is electrically connected to an output electrode of the semiconductor chip. At least the portion of the output terminal 3 extending from the side surface 2b of the case 2 to the outside is flat. A through-hole may be formed in the portion of the output terminal 3 extending to the outside. The output terminal 3 is made of a metal with excellent conductivity. Examples of such metals include copper, aluminum, or an alloy containing at least one of these as a main component. The surface of the output terminal 3 may be plated to improve corrosion resistance. Examples of plating materials used in this case include nickel, a nickel-phosphorus alloy, and a nickel-boron alloy.

[0039] The control terminal 4 is electrically connected to a predetermined conductive pattern on the insulating circuit board inside the case 2 and extends from the top surface 2e of the case 2 to the outside in a direction perpendicular to the top surface 2e (in the +Z direction). The predetermined conductive pattern is electrically connected to a control electrode of the semiconductor chip. The predetermined conductive pattern may also be electrically connected to an output electrode of the semiconductor chip. In this case, the control terminal 4 electrically connected to the predetermined conductive pattern carries the sense current flowing through the semiconductor chip.

[0040] Furthermore, a plurality of control terminals 4 may be provided along the side surface 2c on the side surface 2c of the top surface 2e. The top surface 2e side of the control terminal 4 may be protected by a protective portion. In this case, the protective portion may be made of the same material as the case 2. Such control terminals 4 are made of a metal with excellent conductivity. Such metals are, for example, copper, aluminum, or an alloy containing at least one of these as a main component. The surface of the control terminal 4 may be plated to improve corrosion resistance. In this case, the plating material used is, for example, nickel, a nickel-phosphorus alloy, or a nickel-boron alloy.

[0041] The stacked terminal unit 5 is electrically connected to a predetermined conductive pattern of the insulating circuit board inside the case 2 and extends from the side surface 2d of the case 2 to the outside. In this case, the stacked terminal unit 5 extends perpendicularly (in the +X direction) to the side surface 2d of the case 2. The stacked terminal unit 5 is externally connected to a positive electrode and a negative electrode. The predetermined conductive pattern is electrically connected to an output electrode and an input electrode of the semiconductor chip.

[0042] Details of such stacked terminal unit 5 will be described with reference to FIGS. 4 to 7. FIG. 4 is a plan view of the stacked terminal unit included in the semiconductor device of the first embodiment. FIG. 5 is a first longitudinal cross-sectional view of the stacked terminal unit included in the semiconductor device of the first embodiment, and FIG. 6 is a second longitudinal cross-sectional view of the stacked terminal unit included in the semiconductor device of the first embodiment. FIG. 7 is a lateral cross-sectional view of the stacked terminal unit included in the semiconductor device of the first embodiment. Note that in FIGS. 4 to 6, the portions covered by the case 2 are indicated by dashed lines. FIGS. 5 and 6 show cross-sectional views taken along dashed dotted lines Y1-Y1 and Y2-Y2 in FIG. 4, respectively. FIG. 7 shows a cross-sectional view taken along dashed dotted line X-X in FIG. 4.

[0043] The stacked terminal portion 5 includes a first terminal 10, a second terminal 20, a first insulating member 30, and a second insulating member 40. The first terminal 10 integrally includes a conductive portion 11, a linking portion 12, and a joint portion 13. The thickness of the first terminal 10 is generally uniform overall. The first terminal 10 extends outward from the side surface 2d of the case 2. A portion of the first terminal 10 extends inward from the side surface 2d of the case 2. A portion of the first terminal 10 extending inward from the side surface 2d of the case 2 is fixed to the case 2. At this time, an exposed region of the first terminal 10, which will be described later, is exposed.

[0044] The conductive portion 11 has a rectangular, flat plate shape in plan view, and includes terminal edge portions 11 a, 11 c provided on the sides of the rectangular front and back surfaces, and terminal outer end portions 11 d provided on the tips of the front and back surfaces.

[0045] The side portions are those parallel to the extension direction (+X direction) of the stacked terminal portion 5. That is, the terminal edges 11a and 11c are substantially parallel to the side surfaces 2a and 2c of the case 2. The tip portions are the outermost ends in the extension direction (+X direction) of the stacked terminal portion 5. That is, the terminal outer end portion 11d is substantially parallel to the side surfaces 2b and 2d of the case 2. The portion of the front surface of the conductive portion 11 that extends from the side surface 2d of the case 2 and is exposed is the exposed region 11e (see FIG. 4 ). For example, a negative electrode terminal (N terminal) may be connected to the exposed region 11e from the outside.

[0046] The linking portion 12 is formed on the terminal edge portion 11c side of the end portion opposite (in the -X direction) to the terminal outer end portion 11d of the conductive portion 11. The width of the linking portion 12 in the ±Y direction may be 30% or more and 50% or less of the width of the conductive portion 11 in the same direction.

[0047] The joint 13 has a rectangular shape in a plan view and is flat. When viewed in the +Y direction, the joint 13 is located closer to the bottom surface 2f of the case 2 than the conductive portion 11. The joint 13 is integrally connected to the conductive portion 11 at a different height via a linking portion 12. The joint 13 is bonded to a predetermined conductive pattern of an insulating circuit board (not shown). Note that the bonding in this case may be performed using the bonding material already described or by ultrasonic bonding.

[0048] The second terminal 20 integrally includes a conductive portion 21, a linking portion 22, and a joint portion 23. The thickness of the second terminal 20 is generally uniform overall. The conductive portion 21 is rectangular in plan view, forming a flat plate, and faces the conductive portion 11 of the first terminal 10. The conductive portion 21 includes terminal edge portions 21a, 21c provided on the sides of the rectangular front and back surfaces, and terminal outer end portions 21d provided on the tips of the front and back surfaces.

[0049] The side portions are side portions parallel to the extension direction (+X direction) of the stacked terminal portion 5. That is, the terminal edges 21a, 21c are substantially parallel to the side surfaces 2a, 2c of the case 2 and the terminal edges 11a, 11c of the first terminal 10. In addition, in the first embodiment, the width of the conductive portion 21 in the ±Y direction is greater than the width of the conductive portion 11 of the first terminal 10 in the same direction. That is, the terminal edges 21a, 21c of the conductive portion 21 are located outward in the ±Y direction from the terminal edges 11a, 11c of the conductive portion 11 of the first terminal 10.

[0050] The tip end 21d is the outermost end in the extension direction (+X direction) of the stacked terminal portion 5. That is, the terminal outer end 21d is substantially parallel to the side surfaces 2b and 2d of the case 2 and the terminal outer end 11d of the first terminal 10. Furthermore, the terminal outer end 21d is located more outward (+X direction) than the terminal outer end 11d of the first terminal 10. That is, the length of the conductive portion 21 in the ±X direction (extension direction of the stacked terminal portion 5) is longer than the length of the conductive portion 11 of the first terminal 10 in the same direction. Note that the end of the conductive portion 21 opposite the terminal outer end 21d may be located at the same position in a plan view as the end of the terminal outer end 11d of the first terminal 10 in the same direction. The portion of the front surface of the conductive portion 21 that extends from the case 2 and the second insulating member 40 and is exposed is an exposed region 21e (see FIG. 4 ). The exposed region 21e may be connected to, for example, a positive electrode terminal (P terminal) from the outside.

[0051] Linking portion 22 is formed on the terminal edge portion 21a side of the end portion opposite (in the -X direction) to terminal outer end portion 21d of conductive portion 21. The width of linking portion 22 in the ±Y direction may be 30% or more and 50% or less of the width of conductive portion 21 in the same direction. However, linking portion 22 and linking portion 12 of first terminal 10 have widths such that they do not overlap in a plan view, and may be formed on conductive portions 11, 21, respectively, without overlapping.

[0052] The joint 23 has a rectangular shape in a plan view and is flat. When viewed in the +Y direction, the joint 23 is located closer to the bottom surface 2f of the case 2 than the conductive portion 21. The joint 23 is integrally connected to the conductive portion 21, which is at a different height, via a linking portion 22. The joint 23 is bonded to a predetermined conductive pattern of an insulating circuit board (not shown). In other words, the joint 23 may be at the same height as the joint 13 of the first terminal 10. Note that the bonding in this case may also be performed using the bonding material already described or ultrasonic bonding.

[0053] The first terminal 10 and the second terminal 20 are made of a metal with excellent conductivity. Such a metal is, for example, copper, aluminum, or an alloy containing at least one of these as a main component. The surfaces of the first terminal 10 and the second terminal 20 may be plated to improve corrosion resistance. In this case, the plating material used is, for example, nickel, a nickel-phosphorus alloy, or a nickel-boron alloy.

[0054] The first insulating member 30 is provided between the front surface of the conductive portion 21 of the second terminal 20 and the back surface of the conductive portion 11 of the first terminal 10. Specifically, the back surface of the conductive portion 11 of the first terminal 10 is provided on the front surface of the first insulating member 30, with the second insulating member 40 sandwiched between them. The first insulating member 30 is primarily composed of an insulating material. The first insulating member 30 is a sheet-like (film-like) insulating paper, such as aramid paper. Aramid paper is insulating paper made by weaving densified aramid fibers. Alternatively, the first insulating member 30 may be insulating paper made of mica.

[0055] The first insulating member 30 includes a first portion 31a1 and second portions 31a2, 31c2, and 31d2. The first insulating member 30 has a rectangular shape in a plan view and includes an insulating edge portion 31a, an insulating inner end portion 31b, an insulating edge portion 31c, and an insulating outer end portion 31d that surround the first insulating member 30 on all four sides. The insulating edge portions 31a and 31c are provided on the sides of the first insulating member 30. These sides are parallel to the extension direction (+X direction) of the stacked terminal portion 5. That is, the insulating edge portions 31a and 31c are substantially parallel to the side surfaces 2a and 2c of the case 2, the terminal edges 11a and 11c of the first terminal 10, and the terminal edges 21a and 21c of the second terminal 20.

[0056] The first portion 31a1 of the first insulating member 30 is a portion sandwiched between the first terminal 10 and the second terminal 20. In the first embodiment, the first portion 31a1 corresponds to the conductive portion 11 of the first terminal 10. In addition, in the first embodiment, the width of the first insulating member 30 in the ±Y direction is approximately equal to the width of the conductive portion 21 of the second terminal 20 in the same direction. In other words, the insulating edge portions 31a, 31c of the first insulating member 30 are located at approximately the same positions as the terminal edge portions 21a, 21c of the conductive portion 21 of the second terminal 20. Therefore, the width of the first insulating member 30 in the ±Y direction is longer than the width of the conductive portion 11 of the first terminal 10 in the same direction. In other words, the insulating edge portions 31a, 31c of the first insulating member 30 are located outward in the ±Y direction from the terminal edge portions 11a, 11c of the conductive portion 11 of the first terminal 10. Thus, the portions (e.g., the regions surrounded by dashed squares in FIG. 7 ) of the insulating edge portions 31 a, 31 c of the first insulating member 30 that extend outward (in the ±Y direction) from the terminal edge portions 11 a, 11 c of the conductive portion 11 of the first terminal 10 are the second portions 31 a2, 31 c2. The second portions 31 a2, 31 c2 of the first insulating member 30 extend outward (in the ±Y direction) from the terminal edge portions 11 a, 11 c of the first terminal 10 (the ends of the bottom surface that are parallel to the second terminal 20) by a width W.

[0057] The insulating inner end 31b is an end on the inside in the −X direction of the first insulating member 30. That is, the insulating inner end 31b is approximately perpendicular to the side surfaces 2b and 2d of the case 2, the terminal outer end 11d of the first terminal 10, and the terminal outer end 21d of the second terminal 20. Furthermore, the insulating inner end 31b extends in the −X direction further than the opposite (−X direction) ends of the terminal outer end 11d of the first terminal 10 and the terminal outer end 21d of the second terminal 20.

[0058] The insulating outer end 31d is the outer end of the first insulating member 30 in the +X direction. That is, the insulating outer end 31d is generally parallel to the side surfaces 2b and 2d of the case 2, the terminal outer end 11d of the first terminal 10, and the terminal outer end 21d of the second terminal 20. Furthermore, the insulating outer end 31d is located outward (in the +X direction) from the terminal outer end 11d of the first terminal 10 and inward (in the -X direction) from the terminal outer end 21d of the second terminal 20. Such a portion of the front surface of the first insulating member 30 that is exposed from the case 2 and the conductive portion 11 of the first terminal 10 is an exposed region (reference numeral omitted). Thus, the portion of the insulating outer end 31d of the first insulating member 30 that extends outward (in the +X direction) from the terminal outer end 11d of the conductive portion 11 of the first terminal 10 (for example, the region surrounded by the dashed square in FIGS. 5 and 6 ) is also the second portion 31d2. The front surface of the second portion 31d2 of the first insulating member 30 is an exposed region (reference numeral omitted). The length of the second portion 31d2 of the first insulating member 30 in the ±X directions may be any length that maintains insulation between the outer terminal end portion 11d of the first terminal 10 and the second terminal 20. This length is, for example, approximately 10 mm. Therefore, the second portions 31a2, 31c2, and 31d2 are provided on the −Y direction side, +Y direction side, and +X direction side of the first portion 31a1, respectively, in a plan view.

[0059] A portion (insulating upper portion 41e) of the second insulating member 40 is disposed between the first terminal 10 and the second terminal 20. Furthermore, the insulating upper portion 41e of the second insulating member 40 contacts the entire surfaces of the first portion 31a1 and the second portions 31a2, 31c2, and 31d2 of the first insulating member 30.

[0060] However, in the first embodiment, the second insulating member 40 includes an insulating upper portion 41e that contacts the upper surfaces of the first portion 31a1 and the second portions 31a2, 31c2, and 31d2, and collectively encompasses the first insulating member 30 and the second terminal 20. When viewed in the −X direction, the second insulating member 40 integrally includes the insulating upper portion 41e that encompasses the first insulating member 30 and the second terminal 20, as well as the insulating edge portion 41a, the insulating edge portion 41c, and the insulating lower portion 41f, as shown in FIG.

[0061] The insulating upper portion 41e of the second insulating member 40 covers the entire ±Y direction of the front surface of the first insulating member 30. Furthermore, the insulating edge portions 41a, 41c of the second insulating member 40 cover the entire ±Z direction of the insulating edge portions 31a, 31c of the first insulating member 30 and the terminal edge portions 21a, 21c of the conductive portion 21 of the second terminal 20. Furthermore, the insulating lower portion 41f of the second insulating member 40 covers the entire ±Y direction of the back surface of the conductive portion 21 of the second terminal 20.

[0062] The length of the second insulating member 40 in the ±X directions is generally uniform overall. The insulating inner end 41b of the second insulating member 40 in the -X direction is located at approximately the same position as the end opposite the terminal outer end 11d of the first terminal 10 (conductive portion 11). The insulating inner end 41b of the second insulating member 40 in the -X direction is located at approximately the same position as the end opposite the terminal outer end 21d of the second terminal 20 (conductive portion 21). Furthermore, the insulating outer end 41d of the second insulating member 40 is located at approximately the same position as the insulating outer end 31d of the first insulating member 40.

[0063] Such a second insulating member 40 is also primarily composed of an insulating material. However, the insulating property of the second insulating member 40 may be lower than that of the first insulating member 30. On the other hand, the flexibility of the second insulating member 40 must be higher than that of the first insulating member 30. That is, the dielectric breakdown strength of the second insulating member 40 is lower than that of the first insulating member 30. The Young's modulus of the second insulating member 40 is lower than that of the first insulating member 30. Such a second insulating member 40 may be, for example, a heat-shrinkable tube or an insulating tape. Such a material may be, for example, polyolefin or fluororesin (PTFE).

[0064] In the stacked terminal unit 5 configured as described above, a negative terminal is connected to the exposed region 11e of the first terminal 10, and a positive terminal is connected to the exposed region 21e of the second terminal 20. The current flows in the first terminal 10 in the opposite direction to the current flows in the second terminal 20. A first insulating member 30 and a second insulating member 40 (insulating upper portion 41e) are provided between the first terminal 10 and the second terminal 20. Therefore, in the stacked terminal unit 5, insulation between the first terminal 10 and the second terminal 20 is maintained, and inductance is reduced.

[0065] The semiconductor device 1 is manufactured as follows. First, the components of the stacked terminal unit 5 (first terminal 30, second terminal 20, first insulating member 30, second insulating member 40) are prepared. The first insulating member 30 is provided on the front surface of the conductive portion 21 of the second terminal 20, and these are enclosed by the second insulating member 40. The first terminal 10 is provided on the second terminal 20 via the first insulating member 30 and the second insulating member 40. The semiconductor chip, output terminal 3, control terminal 4, and stacked terminal unit 5 are each bonded to a predetermined conductive pattern on the insulating circuit board. At this time, wiring is performed with bonding wires to the insulating circuit board and the semiconductor chip. In the stacked terminal unit 5, the first insulating member 30 is provided on the front surface of the conductive portion 21 of the second terminal 20, and these are enclosed by the second insulating member 40. This improves the handleability of the stacked terminal unit 5.

[0066] The insulating circuit board bonded in this manner is placed in a predetermined mold, and a sealing material is injected into the mold and cured. Thus, the insulating circuit board and semiconductor chip are sealed in the mold, and the output terminals 3, control terminals 4, and stacked terminal section 5 are fixed in place. The mold is then removed to complete the semiconductor device 1.

[0067] Next, a first comparative example of the laminated terminal unit 5 of the first embodiment, in which the second insulating member 40 is omitted, will be described with reference to FIG. 8 . FIG. 8 is a diagram illustrating the electric field strength of the laminated terminal unit of the first comparative example. The lower diagram of FIG. 8 corresponds to the cross-sectional view ( FIG. 7 ) of the laminated terminal unit 150 of the first comparative example taken along the dashed-dotted line X-X in FIG. 4 , showing the terminal edge portion 11c of the first terminal 10. The dashed lines parallel to the ±Y directions in this diagram indicate the measurement positions of the electric field strength in the laminated terminal unit 150. The hatching in this diagram indicates the locations where the electric field strength is generated. The upper diagram of FIG. 8 shows the electric field strength versus the distance (position) in the ±Y directions of the laminated terminal unit 150. That is, the horizontal axis Y represents the position (mm) in the Y direction of the laminated terminal unit 150, and the vertical axis V represents the electric field strength (V / m). The origin (0 mm) of the horizontal axis Y corresponds to the position of the terminal edge portion 11 c of the first terminal 10 included in the stacked terminal portion 150 .

[0068] In the stacked terminal portion 150 of the first comparative example, the first terminal 10 is provided on the second terminal 20 via a first insulating member 30. The first insulating member 30 extends outward from the terminal edge portion 11c of the first terminal 10. The insulating edge portion 31c of the first insulating member 30 and the terminal edge portion 21c of the second terminal 20 are in substantially the same position.

[0069] For example, a negative terminal is connected to the first terminal 10 and a positive terminal is connected to the second terminal 20 of such a stacked terminal portion 150, and electricity is passed through the stacked terminal portion 150. It can be seen that an electric field strength is generated in the portion of the first insulating member 30 where the first terminal 10 and the second terminal 20 overlap. It can be seen that the electric field strength is particularly strongest at a portion of the first insulating member 30 corresponding to the terminal edge 11c of the first terminal 10. Furthermore, the electric field strength generated in the first insulating member 30 decreases with increasing distance from the terminal edge 11c of the first terminal 10 (in the +Y direction), and almost no electric field strength is generated beyond 0.5 mm.

[0070] From the above, it can be seen that the electric field strength of the stacked terminal unit 150 increases significantly near the terminal edge 11c of the first terminal 10. Therefore, the stacked terminal unit 150 cannot maintain insulation between the terminal edge 11c of the first terminal 10 and the second terminal 20.

[0071] Next, consider a case where the widths of the first terminal 10 and the second terminal 20 in the ±Y directions are equal in the stacked terminal portion 150. In this case, in order to ensure the creepage insulation distance between the first terminal 10 and the second terminal 20, it was necessary to make the width of the first insulating member 30 in the ±Y directions sufficiently longer than the widths of the first terminal 10 and the second terminal 20 in the same directions. For this reason, the stacked terminal portion 150 required a certain width, which limited its miniaturization.

[0072] Next, a second comparative example of the stacked terminal portion 150 of the first comparative example, in which a second insulating member 40 is provided, will be described with reference to Fig. 9. Fig. 9 is a cross-sectional view of the stacked terminal portion of the second comparative example in the short direction. Fig. 9 is a cross-sectional view of the stacked terminal portion 150a at a location corresponding to the dashed dotted line X-X in Fig. 4.

[0073] In order to reduce the size of the stacked terminal portion 150 of the first comparative example, the stacked terminal portion 150a of the second comparative example has the same width in the ±Y direction among the first terminal 10, the second terminal 20, and the first insulating member 30. Furthermore, the first insulating member 30 and the second terminal 20 are collectively enclosed by the second insulating member 40, thereby improving insulation.

[0074] In this stacked terminal portion 150a, a negative terminal is connected to the first terminal 10, and a positive terminal is connected to the second terminal 20 to pass current. As described above, the electric field strength is greatest at the terminal edge portions 11a and 11c of the first terminal 10 in the second insulating member 40. For this reason, there is a risk that the region of the second insulating member 40 enclosed by the dashed line in FIG. 9 will be destroyed in the stacked terminal portion 150a. If this region is destroyed, it will be more likely that the insulation between the first terminal 10 and the second terminal 20 cannot be maintained.

[0075] The semiconductor device 1 described above includes a first terminal 10, a second terminal 20, a first insulating member 30, a second insulating member 40, and a case 2. The first terminal 10 and the second terminal 20 are plate-shaped, and the second terminal 20 faces the first terminal 10. The first insulating member 30 has a first portion 31a1 sandwiched between the first terminal 10 and the second terminal 20, and second portions 31a2, 31c2, and 31d2 extending a predetermined distance outward from an end of the bottom surface of the first terminal 10 parallel to the second terminal 20. A portion of the second insulating member 40 is disposed between the first terminal 10 and the second terminal 20 and contacts the first portion 31a1 and the second portions 31a2, 31c2, and 31d2 of the first terminal 10. The case 2 fixes the first terminal 10, the second insulating member 40, the first insulating member 30, and the second terminal 20. This prevents breakdown of the insulating edge portions 41a, 41c of the second portions 31a2, 31c2 included in the second insulating member 40. Furthermore, the first insulating member 30 has higher insulating properties than the second insulating member 40, and the first insulating member 30 and the second insulating member 40 are provided between the first terminal 10 and the second terminal 20. This allows the distance between the first terminal 10 and the second terminal 20 to be maintained constant, and also reduces electric field concentration between the terminal edge portions 11a, 11c of the first terminal 10 and the second terminal 20 directly below the terminal outer end 11d, thereby maintaining insulation. This structure of the stacked terminal unit 5 allows the width of the first insulating member 30 to be reduced while ensuring the creepage insulation distance between the first terminal 10 and the second terminal 20, thereby enabling miniaturization. Furthermore, electric field concentration between the first terminal 10 and the second terminal 20 can be reduced. Therefore, the semiconductor device 1 including the stacked terminal unit 5 maintains reliability and can be miniaturized.

[0076] 8, in such a semiconductor device 1, insulation can be more reliably maintained if the first portion 31a1 of the stacked terminal portion 5 extends 0.5 mm or more from the first terminal 10. In other words, the extending width of the second portions 31a2, 31c2, 31d2 of the stacked terminal portion 5 is preferably 0.5 mm or more.

[0077] The exposed regions 11e and 21e are required on the +X direction side of the stacked terminal portion 5 to connect the positive and negative terminals, respectively. The second portion 31d2 of the first insulating member 30 needs to extend 0.5 mm or more from the terminal outer end portion 11d of the first terminal 10, and a creepage insulation distance (in the ±X directions) needs to be secured between the exposed region 11e of the first terminal 10 and the exposed region 21e of the second terminal 20 to maintain insulation.

[0078] In the second insulating member 40 of the first embodiment, the insulating edge portion 41 a, the insulating upper portion 41 e, the insulating edge portion 41 c, and the insulating lower portion 41 f have substantially the same thickness (see FIG. 7 ). However, this is not limited to this case, and the thicknesses of the insulating edge portions 41 a and 41 c of the second insulating member 40 may be greater than the thicknesses of the insulating upper portion 41 e and the insulating lower portion 41 f.

[0079] Furthermore, the stacked terminal unit 5 of the first embodiment includes a first terminal 10 and a second terminal 20 that is enclosed together with the first insulating member 30 by the second insulating member 40 on the back surface side of the first terminal 10. The objects enclosed by the second insulating member 40 are not limited to this case. For example, if the width of the first terminal 10 in the ±Y direction is longer than the width of the second terminal 20 in the same direction, a first insulating member 30 whose width in the ±Y direction is equal to that of the first terminal 10 may be provided on the back surface of the first terminal 10, and the first terminal 10 and the first insulating member 30 may be enclosed by the second insulating member 40. Then, the second terminal 20 may be provided on the back surface side of the second insulating member 40 that encloses the first terminal 10 and the first insulating member 30. In this case, the terminal outer end 11d of the first terminal 10 included in the second insulating member 40 may extend in the +X direction further than the insulating outer end 41d, and the terminal outer end 21d of the second terminal 20 may extend in the +X direction further than the terminal outer end 11d of the first terminal 10.

[0080] Next, various modified examples of the stacked terminal unit 5 of the first embodiment will be described below with reference to the drawings. In the following, unless otherwise specified, the first terminal 10, the second terminal 20, the first insulating member 30, and the second insulating member 40 may be made of the same materials as those in the first embodiment.

[0081] (Modification 1-1) The stacked terminal section 5a of Modification 1-1 will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view in the short direction of the stacked terminal section included in the semiconductor device of the first embodiment (Modification 1-1). Fig. 10 is a cross-sectional view of the stacked terminal section 5a at a location corresponding to the dashed dotted line X-X in Fig. 4.

[0082] In the stacked terminal section 5a of Modification 1-1, the first terminal 10, the second terminal 20, and the first insulating member 30 have substantially the same width in the ±Y directions in the stacked terminal section 5 of the first embodiment. However, the back side (the end (corner) of the conductive portion 11 on the second terminal 20 side) of the terminal edge portions 11a and 11c of the first terminal 10 (conductive portion 11) of the stacked terminal section 5a is chamfered along the terminal edge portions 11a and 11c (±X directions). The chamfering in this case may be either R-chamfering or C-chamfering.

[0083] Therefore, the insulating edge portions 31 a, 31 c of the first insulating member 30 extend outward by a width W from the chamfered end portions on the ±Y direction sides of the back surface of the first terminal 10 (conductive portion 11). In other words, the terminal edge portions 11 a, 11 c of the first terminal 10 extend outward in the ±Y direction while being spaced apart from the second portions 31 a2, 31 c2 of the first insulating member 30.

[0084] With this structure, the laminated terminal portion 5a can also be made smaller by reducing the width of the first insulating member 30 while ensuring the creepage insulation distance between the first terminal 10 and the second terminal 20, as in the first embodiment. Furthermore, the electric field concentration between the first terminal 10 and the second terminal 20 can be alleviated.

[0085] Furthermore, the back side (the end (corner) of the conductive portion 11 on the second terminal 20 side) of the terminal edge portions 11a and 11c of the first terminal 10 (conductive portion 11) is chamfered along the terminal edge portions 11a and 11c (±X direction). This makes the cross-sectional area of ​​the first terminal 10 larger than that of the stacked terminal portion 5. This increases the current capacity of the stacked terminal portion 5a.

[0086] (Modification 1-2) The stacked terminal section 5b of Modification 1-2 will be described with reference to Fig. 11. Fig. 11 is a cross-sectional view in the short direction of the stacked terminal section included in the semiconductor device of the first embodiment (Modification 1-2). Fig. 11 is a cross-sectional view of the stacked terminal section 5b at a location corresponding to the dashed dotted line X-X in Fig. 4.

[0087] In the stacked terminal unit 5b of Modification 1-2, the widths in the ±Y directions of the first terminal 10 and the second terminal 20 in the stacked terminal unit 5 of the first embodiment are approximately equal. The width in the ±Y directions of the first insulating member 30 is longer than the widths in the ±Y directions of the first terminal 10 and the second terminal 20. In other words, the second portions 31a2, 31c2 of the first insulating member 30 extend outward (in the ±Y directions) from the terminal edge portions 11a, 11c of the first terminal 10 and the terminal edge portions 21a, 21c of the second terminal 20.

[0088] Furthermore, in the stacked terminal portion 5b of Modification 1-2, when viewed in the -X direction, the second terminal 20 and the first insulating member 30 disposed on the front surface of the second terminal 20 are entirely surrounded by the second insulating member 40. The second insulating member 40 of Modification 1-2 is primarily composed of a thermosetting resin. The thermosetting resin is as described above, but here, for example, it may be epoxy resin. The first terminal 10 (conductive portion 11) is disposed on the front surface of the second insulating member 40, facing the second terminal 20 (conductive portion 21). Therefore, even if the second insulating member 40 is made of a material other than a heat-shrinkable tube or insulating tape, such as epoxy resin, the stacked terminal portion 5b can also be made smaller in width and size while maintaining the creepage insulation distance between the first terminal 10 and the second terminal 20, as in the first embodiment. Furthermore, electric field concentration between the first terminal 10 and the second terminal 20 can be alleviated.

[0089] (Modification 1-3) A stacked terminal portion 5c of Modification 1-3 will be described with reference to Fig. 12. Fig. 12 is a cross-sectional view in the short direction of the stacked terminal portion included in the semiconductor device of the first embodiment (Modification 1-3). Fig. 12 is a cross-sectional view of the stacked terminal portion 5c at a location corresponding to the dashed dotted line X-X in Fig. 4.

[0090] In the stacked terminal unit 5c of Modification 1-3, the second insulating member 40 in the stacked terminal unit 5 of the first embodiment includes an insulating edge portion 41a, an insulating upper portion 41e, an insulating edge portion 41c, and an insulating lower portion 41f surrounding the second terminal 20 and the first insulating member 30 on all four sides when viewed in the -X direction. However, the second insulating member 40 does not include the entire four-sided periphery of the second terminal 20 and the first insulating member 30. A gap 41h is formed in the insulating lower portion 41f of the second insulating member 40. In other words, the second insulating member 40 includes the entire four-sided periphery of the second terminal 20 and the first insulating member 30 when viewed in the -X direction, and a slit (gap 41h) is formed across the insulating lower portion 41f (opposite the second terminal 20) that covers the back surface of the second terminal 20 in the ±X directions. In this case, for example, the second insulating member 40 may be in the form of a tape, and may encompass the second terminal 20 and the first insulating member 30 on all four sides, with a gap 41 h on the rear surface of the second terminal 20 .

[0091] With this structure, the stacked terminal portion 5c can also be made smaller by reducing the width of the first insulating member 30 while ensuring the creepage insulation distance between the first terminal 10 and the second terminal 20, as in the first embodiment. Furthermore, the electric field concentration between the first terminal 10 and the second terminal 20 can be alleviated.

[0092] Furthermore, a gap 41h (slit) is formed in the insulating lower part 41f covering the back surface of the second terminal 20. This makes it possible to maintain a creepage insulation distance from the terminal edge parts 11a, 11c of the first terminal 10 to the back surface of the second insulating member 40. The ±Y direction width of the gap 41h in the insulating lower part 41f included in the second insulating member 40 needs to be a width that ensures this creepage insulation distance. Therefore, it is preferable that the ±Y direction width of the gap 41h in the insulating lower part 41f be as narrow as possible.

[0093] Furthermore, a gap 41h may be formed on the back surface of the second insulating member 40 of the stacked terminal portion 5a of Modification 1-1 and the stacked terminal portion 5b of Modification 1-2, as in Modification 1-3. In this case, too, the creepage insulation distance from the terminal edge portions 11a, 11c of the first terminal 10 to the back surface of the second insulating member 40 can be maintained.

[0094] [Second embodiment] A stacked terminal unit according to a second embodiment is the same as the stacked terminal unit 5 according to the first embodiment, except that the first insulating member 30 is provided on the front surface of the second insulating member 40. Such a stacked terminal unit will be described with reference to Figs. 13 to 15 .

[0095] Fig. 13 is a plan view of a stacked terminal unit included in a semiconductor device of the second embodiment. Fig. 14 is a first longitudinal cross-sectional view of a stacked terminal unit included in a semiconductor device of the second embodiment, and Fig. 15 is a lateral cross-sectional view of a stacked terminal unit included in a semiconductor device of the second embodiment. Note that Fig. 13 corresponds to the plan view of stacked terminal unit 5d in Fig. 3. Fig. 14 is a cross-sectional view taken along dashed line Y-Y in Fig. 13. Fig. 15 is a cross-sectional view taken along dashed line X-X in Fig. 13.

[0096] The stacked terminal portion 5d also includes a first terminal 10, a second terminal 20, a first insulating member 30, and a second insulating member 40. The first terminal 10, the second terminal 20, the first insulating member 30, and the second insulating member 40 are made of the same material as those of the stacked terminal portion 5 of the first embodiment. Furthermore, the width of the first terminal 10 (conductive portion 11) in the ±Y direction is approximately equal to the width of the second terminal 20 (conductive portion 21) in the same direction.

[0097] In the stacked terminal portion 5d, when viewed in the −X direction, the second insulating member 40 encompasses the entire four periphery of the second terminal 20. The first insulating member 30 and the first terminal 10 are stacked in this order on the front surface of the insulating upper portion 41e of the second insulating member 40.

[0098] When viewed in the -X direction (see Figure 15), the second insulating member 40 integrally includes an insulating edge portion 41a that encompasses the entire four sides of the second terminal 20, an insulating upper portion 41e, an insulating edge portion 41c, and an insulating lower portion 41f.

[0099] The insulating upper portion 41e of the second insulating member 40 is disposed between the first terminal 10 and the second terminal 20. Furthermore, the insulating upper portion 41e of the second insulating member 40 is in contact with the entire lower surfaces of the first portion 31a1 and the second portions 31a2, 31c2, and 31d2 of the first insulating member 30. The insulating upper portion 41e of the second insulating member 40 covers the entire front surface of the second terminal 20 in the ±Y direction. Furthermore, the insulating edge portions 41a and 41c of the second insulating member 40 cover the entire terminal edge portions 21a and 21c of the conductive portion 21 of the second terminal 20 in the ±Z direction. Furthermore, the insulating lower portion 41f of the second insulating member 40 covers the entire back surface of the conductive portion 21 of the second terminal 20 in the ±Y direction. The insulating edge portions 41a and 41c of the second insulating member 40 are positioned outward in the ±Y direction from the terminal edge portions 21a and 21c of the second terminal 20. That is, the width of the second insulating member 40 in the ±Y direction is greater than the width of the second terminal 20 in the same direction.

[0100] The length of the second insulating member 40 in the ±X directions is generally uniform. The insulating inner end 41b of the second insulating member 40 in the −X direction is located at approximately the same position as the end opposite the terminal outer end 11d of the first terminal 10 (conductive portion 11). The insulating inner end 41b of the second insulating member 40 in the −X direction is located at approximately the same position as the end opposite the terminal outer end 21d of the second terminal 20 (conductive portion 21). The insulating outer end 41d of the second insulating member 40 is located further outward (in the +X direction) than the insulating outer end 31d of the first insulating member 40 and extends further inward (in the −X direction) than the terminal outer end 21d of the second terminal 20. The front surface of the portion of the second terminal 20 that extends further outward (in the +X direction) than the insulating outer end 41d of the second insulating member 40 is the exposed region 21e.

[0101] The first insulating member 30 is provided on the front surface of the insulating upper portion 41e of the second insulating member 40. The width of the first insulating member 30 in the ±Y direction is approximately the same as the width of the second insulating member 40 in the same direction. That is, when viewed in the −X direction, the insulating edge portions 31a, 31c of the first insulating member 30 are located at the same position as the insulating edge portions 41a, 41c of the second insulating member 40. The portions of the first insulating member 30 that extend outward in the ±Y direction from the terminal edge portions 11a, 11c of the first terminal 10 by a width W (e.g., the region surrounded by the dashed square in FIG. 15 ) are the second portions 31a2, 31c2. Note that in the second embodiment, the back surfaces of the second portions 31a2, 31c2 of the first insulating member 30 are covered by the insulating upper portion 41e of the second insulating member 40.

[0102] Furthermore, the insulating inner end 31b of the first insulating member 30 extends further in the -X direction than the opposite (-X direction) ends of the insulating inner end 31b of the second insulating member 40, the terminal outer end 11d of the first terminal 10, and the terminal outer end 21d of the second terminal 20.

[0103] The insulating outer end 31d of the first insulating member 30 is located outside (in the +X direction) the terminal outer end 11d of the first terminal 10 and inside (in the -X direction) the insulating outer end 41d of the second insulating member 40. The portion of the first insulating member 30 extending outside (in the +X direction) the terminal outer end 11d of the conductive portion 11 of the first terminal 10 (for example, the area surrounded by the dashed square in FIG. 14 ) is also the second portion 31d2. That is, the second portion 31d2 of the first insulating member 30 is the portion exposed from the case 2 and the conductive portion 11 of the first terminal 10, and its front surface is an exposed region (reference numeral omitted). The portion of the front surface of the second insulating member 40 exposed from the case 2 and the first insulating member 30 is an exposed region 41g.

[0104] Here, a case is illustrated in which, in plan view, the insulating outer end 31d of the first insulating member 30 is located more inward (in the −X direction) than the insulating outer end 41d of the second insulating member 40. This is not limiting, and the insulating outer end 31d of the first insulating member 30 may be located in the same position as the insulating outer end 41d of the second insulating member 40.

[0105] Therefore, in the stacked terminal portion 5d of the second embodiment, the second portions 31a2, 31c2, and 31d2 of the first insulating member 30 extend outward from the terminal edge portions 11a and 11c and the terminal outer end portion 11d of the first terminal 10. In particular, when the second portions 31a2, 31c2, and 31d2 extend 0.5 mm or more from the first terminal 10, the insulation between the first terminal 10 and the second terminal 20 can be more reliably maintained. Furthermore, the first insulating member 30 has higher insulation properties than the second insulating member 40, and the first insulating member 30 and the second insulating member 40 are provided between the first terminal 10 and the second terminal 20. This allows the distance between the first terminal 10 and the second terminal 20 to be kept constant, and also reduces electric field concentration between the terminal edge portions 11a and 11c and the terminal outer end portion 11d of the first terminal 10 and the second terminal 20 directly below them, thereby maintaining insulation. Therefore, with this structure, the stacked terminal portion 5d can reduce the width of the first insulating member 30 while ensuring the creepage insulation distance between the first terminal 10 and the second terminal 20, thereby enabling miniaturization. Furthermore, it is possible to alleviate electric field concentration between the first terminal 10 and the second terminal 20. Therefore, the semiconductor device 1 including the stacked terminal portion 5 can be miniaturized while maintaining its reliability.

[0106] The first terminal 10 of the stacked terminal portion 5d may be chamfered as in Modification 1-1. The second insulating member 40 of the stacked terminal portion 5d may be made of a thermosetting resin as in Modification 1-2. Furthermore, a gap 41h may be formed on the back surface of the second insulating member 40 of the stacked terminal portion 5d as in Modification 1-3.

[0107] Third Embodiment In a semiconductor device according to a third embodiment, the stacked terminal section 5 included in the semiconductor device 1 according to the first embodiment further includes a third terminal. Such a semiconductor device will be described with reference to FIGS. 16 to 19 . FIG. 16 is a side view of the semiconductor device according to the third embodiment, and FIG. 17 is a plan view of the semiconductor device according to the third embodiment. FIG. 18 is a longitudinal cross-sectional view of the stacked terminal section included in the semiconductor device according to the third embodiment, and FIG. 19 is a lateral cross-sectional view of the stacked terminal section included in the semiconductor device according to the third embodiment. FIG. 16 is a side view of the semiconductor device 1a as viewed in the +Y direction. FIG. 17 is a plan view of the semiconductor device 1a as viewed in the −Z direction. FIG. 18 is a cross-sectional view taken along the dashed-dotted line Y-Y in FIG. 17 . FIG. 19 is a cross-sectional view taken along the dashed-dotted line X-X in FIG. 17 . Note that reference numerals corresponding to the configurations of the first terminal 10, the second terminal 20, the first insulating member 30, and the second insulating member 40 in FIGS. 16 to 19 may be omitted. For these symbols, reference can be made to FIGS.

[0108] The semiconductor device 1a includes at least a case 2, external terminals 7, control terminals 4, and a stacked terminal portion 6. The case 2 and control terminals 4 are as described in the first embodiment. In addition, compared to the semiconductor device 1, the control terminals 4 of the semiconductor device 1a are provided on the side surface 2d of the top surface 2e of the case 2, along the side surface 2d.

[0109] The external terminals 7 are made of the same material as the output terminals 3 of the first embodiment. The external terminals 7 are electrically connected to a predetermined conductive pattern on an insulating circuit board inside the case 2, and extend from the side surface 2b of the case 2 to the outside in a direction perpendicular to the side surface 2b (-X direction). A positive terminal (P terminal) and a negative terminal (N terminal) are connected to the external terminals 7 from the outside.

[0110] The laminated terminal unit 6 is electrically connected to a predetermined conductive pattern of the insulating circuit board inside the case 2 and extends from the side surface 2d of the case 2 to the outside. In this case, the laminated terminal unit 6 extends perpendicularly (in the +X direction) to the side surface 2d. The laminated terminal unit 6 includes three-phase output terminals (U terminal, V terminal, and W terminal). In this laminated terminal unit 6, a third terminal 50, a third insulating member 60, and a fourth insulating member 70 are further provided on the back surface side of the second insulating member 40 of the laminated terminal unit 5 of the first embodiment. The first terminal 10 included in the laminated terminal unit 6 functions as a U terminal, the second terminal 20 functions as a V terminal, and the third terminal 50 functions as a W terminal.

[0111] The third terminal 50 also integrally includes a conductive portion 51, a linking portion, and a joint portion (not shown). The thickness of the third terminal 50 is generally uniform overall. The stacked terminal portion 6 extends outward in the +X direction from the side surface 2d of the case 2. A portion of the stacked terminal portion 6 extends inward (in the -X direction) from the side surface 2d of the case 2. A portion of the stacked terminal portion 6 extending inward from the side surface 2d is fixed to the case 2. In this case, an exposed region of the stacked terminal portion 6, which will be described later, is exposed to the outside.

[0112] The conductive portion 51 has a rectangular, flat plate shape in plan view. The conductive portion 51 includes terminal edge portions 51a, 51c provided on the sides of the rectangular front and back surfaces, and terminal outer end portions 51d provided on the tips of the front and back surfaces. The side portions and tip portions are as described in the first embodiment. The exposed portion of the front surface of the conductive portion 51 extending from the side surface 2d of the case 2 and the fourth insulating member 70 is an exposed region 51e (see FIG. 17 ).

[0113] The width of the conductive portion 51 in the ±Y direction is greater than the width of the conductive portion 21 of the second terminal 20 in the same direction. That is, the terminal edges 51 a, 51 c of the conductive portion 51 are positioned outward in the ±Y direction from the terminal edges 21 a, 21 c of the second terminal 20.

[0114] The linking portion (not shown) is formed at the end of the conductive portion 51 opposite (in the -X direction) to the outer terminal end 51d. The joint portion (not shown) is rectangular in plan view and has a flat plate shape. When viewed in the +Y direction, the joint portion is located closer to the bottom surface 2f of the case 2 than the conductive portion. The joint portion is integrally connected to the conductive portion at a different height via the linking portion. The joint portion is joined to a predetermined conductive pattern on an insulating circuit board (not shown). The joining in this case may be performed using the joining material already described or by ultrasonic joining.

[0115] These linking portions and joint portions may be formed in the conductive portion 51 so as not to overlap the linking portion 12 and joint portion 13 of the first terminal 10 and the linking portion 22 and joint portion 23 of the second terminal 20 in a planar view.

[0116] The third insulating member 60 is provided between the front surface of the conductive portion 51 of the third terminal 50 and the back surface of the conductive portion 21 of the second terminal 20. Specifically, the back surface of the conductive portion 21 of the second terminal 20 is provided on the front surface of the third terminal 50 (conductive portion 51), with the fourth insulating member 70 and the second insulating member 40 sandwiched between them. The third insulating member 60 may be made of the same material as the first insulating member 30.

[0117] The third insulating member 60 includes a third portion 61a1 and fourth portions 61a2, 61c2, and 61d2. The third insulating member 60 has a rectangular shape in plan view and includes an insulating edge portion 61a surrounding the four sides of the front and back surfaces in plan view, an insulating inner end portion (not shown), an insulating edge portion 61c, and an insulating outer end portion 61d. The insulating edge portions 61a and 61c are provided on the sides of the third insulating member 60. These sides are parallel to the extension direction (+X direction) of the stacked terminal portion 6. That is, the insulating edge portions 61a and 61c are substantially parallel to the side surfaces 2a and 2c of the case 2, the terminal edges 11a and 11c of the first terminal 10, the terminal edges 21a and 21c of the second terminal 20, and the terminal edges 51a and 51c of the third terminal 50.

[0118] The third portion 61a1 of the third insulating member 60 is a portion sandwiched between the second terminal 20 and the third terminal 50. In the third embodiment, the third portion 61a1 faces the lower surface of the conductive portion 21 of the second terminal 20. In addition, in the third embodiment, the width of the third insulating member 60 in the ±Y direction is approximately equal to the width of the conductive portion 51 of the third terminal 50 in the same direction. In other words, the insulating edge portions 31a, 31c of the third insulating member 60 are located at the same position as the terminal edge portions 51a, 51c of the conductive portion 51 of the third terminal 50. The width of the third insulating member 60 in the ±Y direction is longer than the width of the conductive portion 21 of the second terminal 20 in the same direction. The insulating edge portions 61a, 61c of the third insulating member 60 are located outward in the ±Y direction from the terminal edge portions 21a, 21c of the conductive portion 21 of the second terminal 20. Thus, the portions (e.g., the regions surrounded by dashed squares in FIG. 19 ) of the insulating edge portions 61 a, 61 c of the third insulating member 60 that extend outward in the ±Y directions from the terminal edge portions 21 a, 21 c of the conductive portion 21 of the second terminal 20 are the fourth portions 61 a2, 61 c2. The fourth portions 61 a2, 61 c2 of the third insulating member 60 extend a width W outward (in the ±Y directions) from the terminal edge portions 21 a, 21 c of the second terminal 20 (the ends of the bottom surface parallel to the third terminal 50).

[0119] The insulating inner end (not shown) is an end on the inside in the −X direction of the third insulating member 60. That is, the insulating inner end is approximately perpendicular to the side surfaces 2a and 2c of the case 2, the terminal edges 21a and 21c of the second terminal 20, and the terminal edges 51a and 51c of the third terminal 50. The insulating inner end also extends in the −X direction further than the opposite (−X direction) ends of the terminal outer end 21d of the second terminal 20 and the terminal outer end 51d of the third terminal 50.

[0120] The insulating outer end 61d is the outer end of the third insulating member 60 in the +X direction. The insulating outer end 61d is generally parallel to the side surfaces 2b and 2d of the case 2, the terminal outer end 21d of the second terminal 20, and the terminal outer end 51d of the third terminal 50. The insulating outer end 61d is located outward in the +X direction from the terminal outer end 21d of the second terminal 20 and inward in the −X direction from the terminal outer end 51d of the third terminal 50. The portion of the front surface of the third insulating member 60 that is exposed from the case 2 and the conductive portion 21 of the second terminal 20 is an exposed region (reference numeral omitted). Thus, the portion of the insulating outer end 61d of the third insulating member 60 that extends outward in the +X direction from the terminal outer end 21d of the conductive portion 21 of the second terminal 20 (for example, the area surrounded by the dashed line in FIG. 18 ) is also the fourth portion 61d2. The front surface of the fourth portion 61d2 of the third insulating member 60 corresponds to an exposed region (reference numeral omitted). The length of the fourth portion 61d2 of the third insulating member 60 in the ±X direction may be any length that maintains insulation between the outer terminal end portion 21d of the second terminal 20 and the third terminal 50. This length is, for example, approximately 10 mm.

[0121] A portion (insulating upper portion 71e) of the fourth insulating member 70 is disposed between the second terminal 20 and the third terminal 50. Furthermore, the insulating upper portion 71e of the fourth insulating member 70 contacts the entire upper surface of each of the third portion 61a1 and the fourth portions 61a2, 61c2, 61d2 of the third insulating member 60. The fourth insulating member 70 may be made of the same material as the second insulating member 40 of the first embodiment.

[0122] However, in the third embodiment, the fourth insulating member 70 includes an insulating upper portion 71e that contacts the entire surfaces of the third portion 61a1 and the fourth portions 61a2, 61c2, and 61d2, and collectively encompasses the third insulating member 60 and the third terminal 50. When viewed in the −X direction, the fourth insulating member 70 integrally includes the insulating upper portion 71e that encompasses the third insulating member 60 and the third terminal 50, as well as the insulating edge portion 71a, the insulating edge portion 71c, and the insulating lower portion 71f, as shown in FIG.

[0123] The insulating upper portion 71e of the fourth insulating member 70 covers the entire ±Y direction of the front surface of the third insulating member 60. Furthermore, the insulating edge portions 71a, 71c of the fourth insulating member 70 cover the entire ±Z direction of the insulating edge portions 61a, 61c of the third insulating member 60 and the terminal edge portions 51a, 51c of the conductive portion 51 of the third terminal 50. Furthermore, the insulating lower portion 71f of the fourth insulating member 70 covers the entire ±Y direction of the back surface of the conductive portion 51 of the third terminal 50.

[0124] The length of the fourth insulating member 70 in the ±X directions is generally uniform overall. The end of the fourth insulating member 70 in the -X direction is located at approximately the same position as the end opposite the terminal outer end 21d of the second terminal 20 (conductive portion 21). The end of the fourth insulating member 70 in the -X direction is located at approximately the same position as the end opposite the terminal outer end 51d of the third terminal 50 (conductive portion 51). Furthermore, the insulating outer end 71d of the fourth insulating member 70 is located at approximately the same position as the insulating outer end 61d of the third insulating member 60. The portion of the front surface of the fourth insulating member 70 that is exposed from the case 2, the second insulating member 40, and the second terminal 20 is an exposed region 71g.

[0125] Therefore, even in the semiconductor device 1a including such a stacked terminal portion 6, the fourth portions 61a2, 61c2, and 61d2 of the third insulating member 60 extend outward from the terminal edge portions 21a and 21c and the terminal outer end portion 21d of the second terminal 20. The insulating upper portion 71e of the fourth insulating member 70 contacts the third portion 61a1 and the fourth portions 61a2, 61c2, and 61d2 of the third insulating member 60. This prevents damage to the insulating edge portions 71a and 71c of the fourth insulating member 70. The third insulating member 60 has higher insulating properties than the fourth insulating member 70, and the third insulating member 60 and the fourth insulating member 70 are provided between the second terminal 20 and the third terminal 50. This allows the distance between the second terminal 20 and the third terminal 50 to be kept constant, and also reduces electric field concentration between the terminal edge portions 21 a, 21 c and the third terminal 50 directly below the terminal outer end portion 21 d of the second terminal 20, thereby maintaining insulation. Therefore, with this structure, the laminated terminal unit 6 can ensure the creepage insulation distance between the second terminal 20 and the third terminal 50, while allowing the width of the third insulating member 60 to be reduced, thereby enabling miniaturization.

[0126] Next, various modified examples of the stacked terminal unit 6 of the third embodiment will be described below with reference to the drawings. In the following, unless otherwise specified, the first terminal 10, the second terminal 20, the first insulating member 30, the second insulating member 40, the third terminal 50, and the third insulating member 60 may be made of the same material as in the third embodiment.

[0127] (Modification 3-1) The stacked terminal section 6a of Modification 3-1 will be described with reference to Fig. 20. Fig. 20 is a cross-sectional view in the short direction of the stacked terminal section included in the semiconductor device of the third embodiment (Modification 3-1). Fig. 20 is a cross-sectional view of the stacked terminal section 6a at a location corresponding to the dashed dotted line X-X in Fig. 17.

[0128] The stacked terminal portion 6a of variant example 3-1 includes the first terminal 10, second terminal 20, first insulating member 30, third terminal 50, and third insulating member 60 of the stacked terminal portion 6 of the third embodiment in the second insulating member 40, as in variant example 1-2.

[0129] In the stacked terminal portion 6a, the first terminal 10, the second terminal 20, and the third terminal 50 have the same width in the ±Y direction. The first insulating member 30 and the third insulating member 60 have the same width in the ±Y direction, and are longer than the widths in the same direction of the first terminal 10, the second terminal 20, and the third terminal 50. The lengths in the ±X direction of the first terminal 10, the second terminal 20, the first insulating member 30, the third terminal 50, and the second insulating member 60 are the same as in the stacked terminal portion 6.

[0130] When viewed in the -X direction, the second insulating member 40 includes an insulating edge portion 41a, an insulating upper portion 41e, an insulating edge portion 41c, and an insulating lower portion 41f around the entire four sides of the first insulating member 30, the second terminal 20, the third insulating member 60, and the third terminal 50. Furthermore, when viewed in the -X direction, the second insulating member 40 includes an insulating middle portion 41i (fourth insulating member) between the second terminal 20 and the third insulating member 60. The second insulating member 40 integrally includes the insulating edge portion 41a, the insulating upper portion 41e, the insulating edge portion 41c, the insulating lower portion 41f, and the insulating middle portion 41i. The second insulating member 40 is primarily composed of the same material as the second insulating member 40 of Modification 1-2.

[0131] The second terminal 20 (conductive portion 21) is provided on the second insulating member 40 so as to face the third terminal 50 (conductive portion 21). Therefore, even if the second insulating member 40 is made of not only a heat-shrinkable tube or insulating tape but also epoxy resin, the width of the third insulating member 60 can be reduced and the stacked terminal portion 6a can be made smaller while ensuring the creepage insulation distance between the second terminal 20 and the third terminal 50, as in the third embodiment. Furthermore, electric field concentration between the second terminal 20 and the third terminal 50 can be alleviated.

[0132] The modified examples 1-1 and 1-3 of the first embodiment can also be applied to the stacked terminal unit 6 of the third embodiment. Also, in the stacked terminal unit 5d of the second embodiment, the third terminal 50 enclosed by the third insulating member 60 and the fourth insulating member 70 may be provided in this order on the back surface side of the second insulating member 40, as in the third embodiment.

[0133] The foregoing merely illustrates the principles of the present invention. Further, since numerous modifications and changes will be apparent to those skilled in the art, the present invention is not limited to the exact construction and application shown and described above, and all corresponding modifications and equivalents are deemed to be within the scope of the present invention as defined by the appended claims and their equivalents.

[0134] REFERENCE SIGNS LIST 1, 1a Semiconductor device 2 Case 2a to 2d Side surface 2e Top surface 2f Bottom surface 3 Output terminal 4 Control terminal 5, 5a to 5c, 6, 6a Stacked terminal portion 7 External terminal 10 First terminal 11 Conductive portion 11a, 11c Terminal edge portion 11d Terminal outer end portion 11e Exposed area 12 Linking portion 13 Joint portion 20 Second terminal 21 Conductive portion 21a, 21c Terminal edge portion 21d Terminal outer end portion 21e Exposed area 22 Linking portion 23 Joint portion 30 First insulating member 31a, 31c Insulating edge portion 31a1 First portion 31a2, 31c2, 31d2 Second portion 31b Insulating inner end portion 31d Insulating outer end portion 40 Second insulating member 41a, 41c Insulating edge portion 41b Inner insulating end portion 41d Outer insulating end portion 41e Upper insulating portion 41f Lower insulating portion 41g Exposed area 41h Gap 41i Middle insulating portion 50 Third terminal 51 Conductive portion 51a, 51c Terminal edge portion 51d Terminal outer end portion 51e Exposed area 60 Third insulating member 61a, 61c Insulating edge portion 61a1 Third portion 61a2, 61c2, 61d2 Fourth portion 61d Outer insulating end portion 70 Fourth insulating member 71a, 71c Insulating edge portion 71d Outer insulating end portion 71e Upper insulating portion 71f Lower insulating portion 71g Exposed area

Claims

1. A semiconductor device comprising: a plate-shaped first terminal; a plate-shaped second terminal opposing the first terminal; a first insulating member having a first portion sandwiched between the first terminal and the second terminal and a second portion extending a predetermined distance outward from an end of a bottom surface of the first terminal parallel to the second terminal; a second insulating member, a portion of which is disposed between the first terminal and the second terminal and in contact with the first and second portions of the first insulating member; and a case that fixes the first terminal, the second insulating member, the first insulating member, and the second terminal.

2. The semiconductor device according to claim 1, wherein the second insulating member is disposed between the first terminal and the first insulating member.

3. The semiconductor device according to claim 1 or 2, wherein the second insulating member encases and fixes the first insulating member and the second terminal.

4. The semiconductor device according to claim 3, wherein the second insulating member is a heat shrink tube or an epoxy resin.

5. The semiconductor device according to claim 1 or 2, wherein an end of said first terminal facing said second insulating member is chamfered, and said chamfered end extends outward while being spaced apart from said second portion.

6. The semiconductor device according to claim 1 or 2, wherein the first terminal and the second terminal have the same width, and the second portion of the first insulating member extends outward beyond an end of the second terminal.

7. The semiconductor device according to claim 3, wherein the second insulating member has a slit on a surface opposite to the second terminal.

8. The semiconductor device according to claim 1, wherein the second insulating member is disposed between the first insulating member and the second terminal.

9. The semiconductor device according to claim 8, wherein the second insulating member encloses the second terminal, and an end of the first insulating member is flush with an end of the second insulating member.

10. The semiconductor device according to claim 1 or 2, wherein the width of the second portion is 0.5 mm or more.

11. The semiconductor device according to claim 1 or 2, wherein the first insulating member has a higher dielectric breakdown strength than the second insulating member.

12. The semiconductor device according to claim 1 or 2, wherein the Young's modulus of the first insulating member is higher than the Young's modulus of the second insulating member.

13. The semiconductor device according to claim 1 or 2, wherein a direction of current flow in said first terminal is opposite to a direction of current flow in said second terminal.

14. A semiconductor device as described in claim 1 or 8, comprising: a plate-shaped third terminal facing the surface of the second terminal opposite the first terminal; a third insulating member having a third portion sandwiched between the second terminal and the third terminal and a fourth portion extending a predetermined distance outward from an end of the bottom surface of the second terminal parallel to the third terminal; and a fourth insulating member, a portion of which is disposed between the second terminal and the third terminal and contacts the third portion and the fourth portion of the third insulating member, and the case further fixes the third terminal, the third insulating member and the fourth insulating member.

15. The semiconductor device according to claim 14, wherein the fourth insulating member encases and fixes the third insulating member and the third terminal.

16. The semiconductor device according to claim 15, wherein the fourth insulating member is a heat shrink tube or an epoxy resin.

17. The semiconductor device according to claim 14, wherein the fourth insulating member is disposed between the second terminal and the third insulating member.

18. The semiconductor device according to claim 14, wherein the width of the third portion is 0.5 mm or more.

19. The semiconductor device according to claim 14, wherein a direction of current flow in said third terminal is opposite to a direction of current flow in said second terminal.

20. The semiconductor device according to claim 14, wherein the fourth insulating member encloses the third terminal, the fourth insulating member is disposed between the third insulating member and the third terminal, and an end of the third insulating member is flush with an end of the fourth insulating member.

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