Exhaust gas preprocessing equipment for semiconductor manufacturing facility

Abstract

According to the present invention, provided is an exhaust gas preprocessing equipment for a semiconductor manufacturing facility. The exhaust gas preprocessing equipment for a semiconductor manufacturing facility is an equipment for preprocessing of exhaust gas discharged by means of a vacuum pump from a semiconductor process chamber, in which a semiconductor manufacturing process using process gas is performed, through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump, the exhaust gas preprocessing equipment comprising: an exhaust gas reaction chamber that is installed on the chamber exhaust pipe; and a plasma reactor that generates plasma to decompose a source gas and generate a plasma gas including a reaction active species, wherein the exhaust gas reaction chamber includes: an exhaust gas reaction part that forms an exhaust gas reaction space in which a component to be processed included in the exhaust gas and the reaction active species are mixed and reacted; and a cooling means installed in the exhaust gas reaction part.

Description

Exhaust gas pretreatment equipment for semiconductor manufacturing facilities

[0001] The present invention relates to a semiconductor manufacturing equipment technology, and more specifically, to a technology for preventing a decrease in the fluidity of exhaust gas discharged from a process chamber of a semiconductor manufacturing equipment.

[0002] Semiconductor devices are manufactured by repeatedly performing photolithography, etching, diffusion, and metal deposition processes on wafers in a semiconductor process chamber, utilizing various process gases. After the process is completed, residual gas remains in the chamber. Because this residual gas contains toxic substances, it is exhausted by a vacuum pump and purified by an exhaust gas treatment device, such as a scrubber.

[0003] The LFW (Low-Fluorine Tungsten) process is a process in which ALD (Atomic Layer Deposition) is performed using process gases containing tungsten hexafluoride (WF6), diborane (B2H6), argon (Ar), and hydrogen (H2) in a semiconductor process. After the LFW process is performed, exhaust gases containing WF6 and B2H6 are discharged from the semiconductor process chamber by a vacuum pump. WF6 and B2H6 contained in the exhaust gas of the LFW process react to form a film-like W X By-products may be generated. Film-like W X Byproducts are deposited on the vacuum pump, which reduces the performance of the vacuum pump and shortens the MTBF (Mean Time Between Failure) of the vacuum pump.

[0004] The ACL (Amorphous Carbon Layer) process is a semiconductor process in which an amorphous carbon layer (ACL) is deposited to form an amorphous carbon film (ACL). After the ACL process, residual gas containing hydrogenated amorphous carbon (aC:H) is generated in the process chamber. After the ACL process, the exhaust gas containing hydrogenated amorphous carbon (aC:H) is discharged from the semiconductor process chamber by a vacuum pump. The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas of the ACL process is deposited on the vacuum pump, which reduces the performance of the vacuum pump and shortens the mean time between failure (MTBF) of the vacuum pump.

[0005] The TEOS (TetraEthyl OrthoSilicate, Si(OC2H5)4) process is a process for depositing a TEOS film on a wafer using TEOS gas in a semiconductor process. After the TEOS process is performed, residual gas containing TEOS is generated in the process chamber. After the TEOS process is performed, the exhaust gas containing TEOS is discharged from the semiconductor process chamber by a vacuum pump. The TEOS contained in the exhaust gas reacts with oxygen to generate SiO2 (silicon dioxide) powder as a byproduct, and the SiO2 powder is deposited on the vacuum pump, which lowers the performance of the vacuum pump and shortens the MTBF of the vacuum pump.

[0006] In relation to the present invention, Korean Patent No. 10-1315880 describes a configuration in which an LFW process is performed in the manufacture of a metal wiring structure, Korean Patent Publication No. 10-2009-0057487 describes a configuration in which an ACL process is performed in the manufacture of a semiconductor device, Korean Patent Publication No. 10-2009-0070800 describes a configuration in which a TEOS process is performed in the manufacture of a semiconductor device, and Korean Patent Publication No. 10-2019-0019651 describes a configuration of a plasma chamber for treating exhaust gas.

[0007] The purpose of the present invention is to provide an exhaust gas pretreatment device that pretreats exhaust gas to prevent a decrease in the fluidity of exhaust gas discharged from a process chamber in which a semiconductor manufacturing process using various process gases is performed in a semiconductor manufacturing facility.

[0008] Another object of the present invention is to provide a film-like W vacuum pump for exhausting residual gas from a semiconductor process chamber. X To prevent deposition of byproducts, exhaust gas pretreatment equipment is provided to pretreat exhaust gas before it is introduced into a vacuum pump.

[0009] Another object of the present invention is to provide an exhaust gas pretreatment device that pretreats exhaust gas before it flows into a vacuum pump to prevent hydrogenated amorphous carbon (aC:H) from being deposited on a vacuum pump that discharges residual gas from a semiconductor process chamber.

[0010] Another object of the present invention is to provide an exhaust gas pretreatment device that pretreats exhaust gas before it flows into a vacuum pump to prevent SiO2 powder from being deposited on a vacuum pump that discharges residual gas from a semiconductor process chamber.

[0011] In order to achieve the above object of the present invention, according to one aspect of the present invention, there is provided an exhaust gas pretreatment device for a semiconductor manufacturing facility, which comprises: an exhaust gas reaction chamber installed on the chamber exhaust pipe; and a plasma reactor that generates plasma to decompose a source gas and generate a plasma gas containing reactive species, wherein the exhaust gas reaction chamber has an exhaust gas reaction section that forms an exhaust gas reaction space inside the exhaust gas in which a component to be treated contained in the exhaust gas and the reactive species are mixed and reacted with each other; and a cooling means installed in the exhaust gas reaction section.

[0012] In order to achieve the above object of the present invention, according to another aspect of the present invention, there is provided an exhaust gas pretreatment device for a semiconductor manufacturing facility, which pretreats exhaust gas discharged from a semiconductor process chamber in which a semiconductor manufacturing process using a process gas is performed through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump by a vacuum pump, the device comprising: an exhaust gas reaction chamber installed on the chamber exhaust pipe; a plasma reactor which generates plasma to decompose a source gas to produce plasma gas containing reactive species; and a plasma supply pipe connecting the exhaust gas reaction chamber and the plasma reactor, wherein the plasma supply pipe has a plasma supply passage through which the plasma gas generated in the plasma reactor is discharged and flows, and a cooling fluid passage through which a cooling fluid flows, and the exhaust gas reaction chamber has an exhaust gas reaction section which forms an exhaust gas reaction space therein in which a component to be treated contained in the exhaust gas and the reactive species introduced through the plasma supply passage are mixed and reacted.

[0013] According to the present invention, all of the objects of the present invention described above can be achieved. Specifically, according to the exhaust gas pretreatment equipment according to the present invention, an exhaust gas reaction chamber is installed on a chamber exhaust pipe through which exhaust gas flows, reactive species generated by an external plasma reactor are supplied to the exhaust gas reaction chamber, and in the exhaust gas reaction chamber, a powder generation-inducing component contained in the exhaust gas reacts with the reactive species and is removed, so that a decrease in the fluidity of the exhaust gas can be effectively prevented.

[0014] In addition, since the exhaust gas reaction chamber is cooled by a cooling means, damage to the exhaust gas pretreatment equipment due to overheating can be prevented.

[0015] And, diborane (B2H6) contained in the exhaust gas discharged from the semiconductor process chamber is a reactive species (F) generated by decomposition of nitrogen trifluoride (NF3) by the external plasma reactor. * ) and is removed by reacting in the exhaust gas treatment chamber, so W X By suppressing the production of by-products, the performance degradation of the vacuum pump can be prevented.

[0016] In addition, SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber is a reactive species (F) generated by decomposition of nitrogen trifluoride (NF3) by the external plasma reactor. * ) and is removed by reaction in the exhaust gas treatment chamber, so that vacuum pump deposition of SiO2 powder can be prevented.

[0017] And, the hydrogenated amorphous carbon contained in the exhaust gas discharged from the semiconductor process chamber is a reactive species (O) generated by decomposition of oxygen (O2) by the external plasma reactor. * ) and is removed by reaction in the exhaust gas treatment chamber, so that vacuum pump deposition of hydrogenated amorphous carbon can be prevented.

[0018] FIG. 1 is a drawing schematically illustrating a configuration of a semiconductor manufacturing facility in which exhaust gas pretreatment equipment according to one embodiment of the present invention is installed.

[0019] Figure 2 is a cross-sectional view of a plasma reactor in the preprocessing equipment of the semiconductor manufacturing facility illustrated in Figure 1.

[0020] Figure 3 is a perspective view illustrating the magnetic core illustrated in Figure 2.

[0021] Figure 4 is a drawing specifically illustrating the configuration of part 'E' in Figure 1.

[0022] Figure 5 is a perspective view illustrating an exhaust gas reaction chamber among the configurations of Figure 4.

[0023] Fig. 6 is a cross-sectional view taken along line A-A' of the exhaust gas reaction chamber illustrated in Fig. 5.

[0024] Fig. 7 is a cross-sectional view taken along line B-B' of the exhaust gas reaction chamber illustrated in Fig. 5.

[0025] Fig. 8 is a perspective view showing a plasma supply pipe among the configurations of Fig. 4.

[0026] Figures 9, 10, and 11 are drawings schematically illustrating a state in which pretreatment of exhaust gas is performed in the exhaust gas reaction chamber of Figure 4.

[0027] Hereinafter, the configuration and operation of an embodiment of the present invention will be described in detail with reference to the drawings.

[0028] FIG. 1 is a block diagram schematically illustrating a configuration of a semiconductor manufacturing facility having exhaust gas pretreatment equipment installed according to an embodiment of the present invention. Referring to FIG. 1, the semiconductor manufacturing facility (100) includes semiconductor manufacturing equipment (101) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, exhaust gas treatment equipment (103) for treating gas discharged from the semiconductor manufacturing equipment (101), exhaust equipment (105) for discharging gas from the semiconductor manufacturing equipment (101) and causing it to flow to the exhaust gas treatment equipment (103), and exhaust gas pretreatment equipment (109) according to an embodiment of the present invention for pretreating gas discharged from the semiconductor manufacturing equipment (101) to prevent deterioration of gas fluidity.

[0029] Semiconductor manufacturing equipment (101) performs a semiconductor manufacturing process using various process gases to manufacture semiconductor devices. The semiconductor manufacturing equipment (101) is equipped with a semiconductor process chamber (102) in which a semiconductor manufacturing process using various process gases is performed. Although not shown, the semiconductor manufacturing equipment (101) further includes a process gas supply unit that supplies various types of process gases required for the semiconductor process chamber (102).

[0030] The semiconductor process chamber (102) includes all types of semiconductor process chambers commonly used to manufacture semiconductor devices in the field of semiconductor manufacturing equipment technology. Residual gas generated in the semiconductor process chamber (102) is discharged to the outside by exhaust equipment (105) and purified by exhaust gas treatment equipment (103). In this embodiment, the semiconductor process performed in the semiconductor process chamber (102) is described as an LFW (Low-Fluorine Tungsten) process in which ALD (Atomic Layer Deposition) is performed using a process gas containing tungsten hexafluoride (WF6), diborane (B2H6), argon (Ar), and hydrogen (H2), an ACL (Amorphous Carbon Layer) process in which an amorphous carbon film (ACL) is formed by depositing amorphous carbon using a process gas containing propene (C3H6), argon (Ar), and helium (He), or a TEOS process in which a TEOS film is deposited on a wafer using TEOS gas.

[0031] The LFW process may be a process for forming a metal wiring structure in a semiconductor memory device, for example, as described in Patent No. 10-1315880. The residual gas generated after the semiconductor process in the semiconductor process chamber (102) is discharged as exhaust gas from the process chamber (102) by the exhaust equipment (105). The exhaust gas discharged from the semiconductor process chamber (102) may include WF6 and B2H6. WF6 and B2H6 included in the exhaust gas discharged from the semiconductor process chamber (102) react to form a film-like W X By-products may be generated, and the film-like W X Byproducts are deposited on the exhaust equipment (105) and deteriorate the performance of the exhaust equipment (105). According to the present invention, B2H6 is removed by the exhaust gas pretreatment equipment (109) to form a film-like W X The production of by-products is suppressed.

[0032] The ACL process may be, for example, a semiconductor process disclosed in Patent Publication No. 10-2009-0057487. After the ACL process is performed, a residual gas containing hydrogenated amorphous carbon (aC:H) is generated in the process chamber (102). The residual gas containing hydrogenated amorphous carbon (aC:H) generated in the semiconductor process chamber (102) after the ACL process is performed is exhausted from the semiconductor process chamber (102) as exhaust gas by the exhaust device (105). The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas discharged from the semiconductor process chamber (102) is deposited on the exhaust device (105), thereby degrading the performance of the exhaust device (105). According to the present invention, the hydrogenated amorphous carbon (aC:H) is removed by the exhaust gas pretreatment device (109), thereby preventing the deposition of the hydrogenated amorphous carbon (aC:H).

[0033] The TEOS process may be, for example, a semiconductor process disclosed in Patent Publication No. 10-2009-0070800. After the TEOS process is performed, residual gas containing TEOS is generated in the process chamber. After the TEOS process is performed, exhaust gas containing TEOS is discharged from the semiconductor process chamber by a vacuum pump. TEOS contained in the exhaust gas reacts with oxygen to generate SiO2 (silicon dioxide) powder as a byproduct, and the SiO2 powder is deposited on the exhaust equipment (105), thereby degrading the performance of the exhaust equipment (105). According to the present invention, the SiO2 powder is removed by the exhaust gas pretreatment equipment (109), thereby preventing the deposition of the SiO2 powder.

[0034] The exhaust gas treatment equipment (103) treats and purifies harmful components contained in the exhaust gas discharged from the semiconductor process chamber (102) discharged by the exhaust equipment (105). The exhaust gas treatment equipment (103) includes a scrubber (104) that treats the exhaust gas. The scrubber (104) includes all types of scrubbers commonly used to treat exhaust gas in the field of semiconductor manufacturing equipment technology.

[0035] The exhaust equipment (105) exhausts residual gas generated after processing in the semiconductor process chamber (102) from the semiconductor process chamber (102). The exhaust equipment (105) is equipped with a vacuum pump (106), a chamber exhaust pipe (107) connecting the semiconductor process chamber (102) and the vacuum pump (106), and a pump exhaust pipe (108) extending downstream from the vacuum pump (106).

[0036] The vacuum pump (106) forms a negative pressure on the semiconductor process chamber (102) side through the chamber exhaust pipe (107) connecting the semiconductor process chamber (102) and the vacuum pump (105) in order to discharge the residual gas of the semiconductor process chamber (102) as exhaust gas. The vacuum pump (106) includes a configuration of a vacuum pump commonly used in the field of semiconductor manufacturing equipment technology, so a detailed description thereof is omitted. The vacuum pump (106) is provided with a film-like W generated as a by-product of the LFW process. X By-products, hydrogenated amorphous carbon (aC:H) produced as a by-product of the ACL process, and SiO2 powder produced as a by-product of the TEOS process may be deposited, thereby degrading the performance of the vacuum pump (106). According to the present invention, the film-like W is formed by the exhaust gas pretreatment equipment (109). X By suppressing the production of byproducts and removing hydrogenated amorphous carbon (aC:H) and SiO2 powder, the MTBF of the vacuum pump (106) is extended.

[0037] The chamber exhaust pipe (107) connects the exhaust port of the semiconductor process chamber (102) and the suction port of the vacuum pump (106) between the semiconductor process chamber (102) and the vacuum pump (106). The residual gas of the semiconductor process chamber (102) is discharged as exhaust gas through the chamber exhaust pipe (107) by the negative pressure formed by the vacuum pump (106). While the exhaust gas flows through the chamber exhaust pipe (107), it is pretreated by the exhaust gas pretreatment equipment (109).

[0038] A pump exhaust pipe (108) extends downstream from a vacuum pump (106). The pump exhaust pipe (108) is connected to the discharge port of the vacuum pump (106) so that exhaust gas discharged from the vacuum pump (106) flows. A scrubber (104) is connected to the downstream end of the pump exhaust pipe (108) so that exhaust gas discharged from the vacuum pump (106) flows into the scrubber (103) through the pump exhaust pipe (108).

[0039] The exhaust gas pretreatment equipment (109) pretreats the exhaust gas discharged from the semiconductor process chamber (102) to prevent a decrease in the fluidity of the exhaust gas discharged from the semiconductor process chamber (102). The exhaust gas pretreatment device (109) generates reactive species using plasma, and removes the target components by reacting the generated reactive species with the target components contained in the exhaust gas before the exhaust gas discharged from the semiconductor process chamber (102) is introduced into the vacuum pump (106). The exhaust gas pretreatment equipment (109) comprises a plasma reactor (110) that generates reactive species using plasma, a power source (180) that supplies power to the plasma reactor (110), a gas supply unit (185) that supplies source gas to the plasma reactor (110), an exhaust gas reaction chamber (150) that is installed on a chamber exhaust pipe (107) and in which reactive species generated in the plasma reactor (110) react with a target component included in the exhaust gas, and a plasma supply pipe (170) that connects the plasma reactor (110) and the exhaust gas reaction chamber (150).

[0040] The plasma reactor (110) decomposes the gas supplied from the gas supplier (185) using plasma to generate reactive species. In this embodiment, the plasma reactor (110) generates excited fluorine atoms (F ), which are reactive fluorine atoms, as reactive species using plasma. * ) or excited oxygen atoms (O ) which are reactive oxygen * ) is generated. In this example, the fluorine atom (F * ) is generated by decomposing nitrogen trifluoride (NF3) supplied from a gas supply (185) by plasma in a plasma reactor (110), and excited oxygen atoms (O *) is described as being generated by decomposing oxygen (O2) supplied from a gas supplier (185) by plasma in a plasma reactor (110). In this embodiment, the plasma reactor (110) is described as an inductively coupled plasma reactor that uses inductively coupled plasma (ICP). Although the plasma reactor (110) is described as using inductively coupled plasma in this embodiment, the present invention is not limited thereto. In the present invention, the plasma reactor includes all types of plasma reactors that generate plasma reactions (for example, a plasma reactor that uses capacitively coupled plasma (CCP)), and this also falls within the scope of the present invention.

[0041] Fig. 2 schematically illustrates a configuration of a plasma reactor (110) in a cross-sectional view. Referring to Fig. 2, the plasma reactor (110) includes a plasma reaction chamber (120), a magnetic core (130) arranged to surround the plasma reaction chamber (120), an igniter (140) for plasma ignition, and a coil (not shown) wound around the magnetic core (130) and supplied with power from a power source (180 of Fig. 1).

[0042] The plasma reaction chamber (120) is a toroidal chamber and includes a gas inlet (121), a gas discharge portion (123) positioned spaced apart from the gas inlet portion (121), and a plasma reaction portion (125) connecting the gas inlet portion (121) and the gas discharge portion (123) and where a plasma reaction occurs. The plasma reaction chamber (120) decomposes gas supplied from a gas supplier (185 in FIG. 1) using plasma to generate reactive species.

[0043] The gas inlet (121) is a short tube-shaped tube extending around a straight extension axis (X), and the front end of the gas inlet (121) is open to form an inlet (122) through which gas is introduced. The inlet (122) is connected to a gas supplier (185) through a gas inlet pipe (186 in FIG. 1). Nitrogen trifluoride (NF3) or oxygen (O2) supplied by the gas supplier (185) is introduced into the plasma reaction chamber (120) through the inlet (122).

[0044] The gas discharge portion (123) is a short tube-shaped portion coaxially spaced from the gas inlet portion (121) on the extension axis (X), and the rear end of the gas discharge portion (123) is open to form an outlet (124) through which gas is discharged. The outlet (124) is connected to the exhaust gas reaction chamber (150 in FIG. 1) through a plasma supply pipe (170 in FIG. 1). After the reactive species generated in the plasma reaction chamber (120) are discharged through the outlet (124), they flow along the plasma supply pipe (187 in FIG. 1) and are introduced into the exhaust gas reaction chamber (150 in FIG. 1).

[0045] The plasma reaction unit (125) connects the spaced gas inlet (121) and gas outlet (123), and forms a plasma reaction region (H) in which a thermal reaction and a plasma reaction for the gas occur inside. The plasma reaction unit (125) has a first connecting pipe part (126) and a second connecting pipe part (127) which are positioned spaced apart from each other on both sides with an extension axis (X) therebetween. The first connecting pipe part (126) and the second connecting pipe part (127) extend parallel to the extension axis (X) and are connected to the gas inlet part (121) and the gas outlet (123). Accordingly, plasma is generated in the plasma reaction unit (125) along a ring-shaped discharge loop (R) as shown by a broken line.

[0046] As the gas flowing in through the inlet (122) is decomposed by the plasma formed in the plasma reaction region (H), the reactive species are generated. As illustrated, when nitrogen trifluoride (NF3) flows in through the inlet (122), the nitrogen trifluoride (NF3) is decomposed in the plasma reaction region (H), thereby generating excited fluorine atoms (F), which are reactive species. * ) and fluorine (F2) are generated. Specifically, in the plasma reaction region (H), nitrogen trifluoride (NF3) is generated from nitrogen (N2), fluorine (F2), and excited nitrogen atoms (N * ), the excited fluorine atom (F * ) and electrons (e). Although not shown, when oxygen (O2) is introduced through the inlet (122), oxygen (O2) is decomposed in the plasma reaction region (H), thereby generating excited oxygen atoms (O) which are reactive species. * ) is created.

[0047] In this embodiment, the plasma reaction chamber (120) is described as being configured by combining a first chamber member (120a) and a second chamber member (120b). The first chamber member (120a) includes the entire gas inlet (121), a portion of the first connecting pipe part (126) connected to the gas inlet (121), and a portion of the second connecting pipe part (127). The second chamber member (120b) includes the entire gas outlet (123), a portion of the first connecting pipe part (126) connected to the gas outlet (123), and a portion of the second connecting pipe part (127).

[0048] The magnetic core (130) is arranged to surround the plasma reaction chamber (120). In this embodiment, the magnetic core (130) is described as a ferrite core commonly used in an inductively coupled plasma generator. FIG. 3 illustrates the magnetic core (130) in a perspective view. Referring to FIGS. 2 and 3, the magnetic core (130) has a ring-shaped ring portion (131) that surrounds the plasma reaction section (125) of the plasma reaction chamber (120) from the outside, and a connecting portion (135) that crosses the inner area of ​​the ring portion (131).

[0049] The ring portion (131) is generally in the shape of a rectangular ring and is arranged perpendicular to the extension axis (X) to externally surround the plasma reaction portion (125) of the plasma reaction chamber (120). The rectangular ring portion (131) has two opposing long sides (132a, 132b) and two opposing short sides (133a, 133b).

[0050] The connecting portion (135) extends in a straight line to connect the two opposing long sides (132a, 132b) of the ring portion (131). Both ends of the connecting portion (135) are connected to the centers of the two long sides (132a, 132b), respectively. The connecting portion (135) is arranged to pass through a gap (128) formed between the first connecting tube portion (126) and the second connecting tube portion (127) of the plasma reaction chamber (120). The inner region of the ring portion (131) is divided into a first through-hole (136) and a second through-hole (137) by the connecting portion (135), and the first connecting tube portion (126) of the reaction chamber (120) passes through the first through-hole (136) and the second connecting tube portion (127) of the plasma reaction chamber (120) passes through the second through-hole (137). Accordingly, the magnetic core (130) is formed to surround the first connecting pipe part (126) and the second connecting pipe part (127) of the reaction chamber (120) from the outside.

[0051] Referring to FIG. 2, an igniter (140) receives high voltage power from a power source (180 in FIG. 1) to ignite plasma. In this embodiment, the igniter (140) is described as being positioned adjacent to a gas inlet (121) in a plasma reaction section (125) of a plasma reaction chamber (120), but the present invention is not limited thereto.

[0052] A coil (not shown) is wound around a magnetic core (130) and connected to a power source (180 in FIG. 1). The coil (not shown) receives a radio frequency alternating current power source through the power source (180 in FIG. 1) to form an induced magnetic flux in the magnetic core (130). An induced electric field is generated by the induced magnetic flux formed in the magnetic core (130), and plasma is formed by the generated induced electric field.

[0053] Referring to Fig. 1, a power source (180) applies radio frequency alternating current power to a coil (not shown) wound around a magnetic core (130 of Fig. 2) to generate inductively coupled plasma. In addition, the power source (180) also supplies power to an igniter (140 of Fig. 1).

[0054] The gas supplier (185) stores the source gas of the reactive species generated by the plasma in the plasma reactor (110) and supplies the stored source gas to the plasma reactor (110) through the gas inlet pipe (186). In this embodiment, the gas supplier (185) is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) as the source gas of the reactive species to the plasma reactor (110).

[0055] Referring to FIGS. 1 and 4, the exhaust gas reaction chamber (150) is installed on the chamber exhaust pipe (107) and receives reactive species generated in the plasma reactor (110) through the plasma supply pipe (170). In the exhaust gas reaction chamber (150), the target component contained in the exhaust gas reacts with the reactive species and is removed. Referring to FIGS. 5, 6, and 7, the exhaust gas reaction chamber (150) has a chamber body (151) and a cooling means (160) installed in the chamber body (151). In the present invention, the fact that the exhaust gas reaction chamber (150) is installed on the chamber exhaust pipe (107) also includes the case where it is installed at the downstream end of the chamber exhaust pipe (107), in which case the exhaust gas reaction chamber (150) is positioned at the front end of the vacuum pump (106).

[0056] The chamber body (151) is provided with an exhaust gas inlet (152), an exhaust gas discharge portion (154) positioned spaced apart from the exhaust gas inlet portion (152), and an exhaust gas reaction portion (156) connecting the exhaust gas inlet portion (152) and the exhaust gas discharge portion (154) and in which a reaction between a reactive species and a component to be treated occurs.

[0057] The exhaust gas inlet (152) is in the form of a short tube, and the front end of the exhaust gas inlet (152) is open to form an inlet (153) through which exhaust gas flows in. The inlet (153) is connected to a semiconductor process chamber (102 in FIG. 1) through a chamber exhaust pipe (107 in FIG. 1). Exhaust gas discharged from the semiconductor process chamber (102 in FIG. 1) through the inlet (153) flows into the exhaust gas reaction unit (156).

[0058] The exhaust gas discharge unit (154) is a short pipe-shaped unit coaxially spaced from the exhaust gas inlet unit (152), and the rear end of the exhaust gas discharge unit (154) is open to form an outlet (155) through which gas is discharged. The outlet (155) is connected to a vacuum pump (106 in FIG. 1) through a chamber exhaust pipe (107 in FIG. 1). Gas discharged from the exhaust gas reaction unit (156) through the outlet (155) is introduced into the vacuum pump (106 in FIG. 1) through the chamber exhaust pipe (107 in FIG. 1).

[0059] The exhaust gas reaction unit (156) connects the exhaust gas inlet (152) and the exhaust gas outlet (154), and forms an exhaust gas reaction space (157) therein. In the exhaust gas reaction space (157), the reactive species supplied from the plasma reactor (110 in FIG. 1) and the target components contained in the exhaust gas discharged from the semiconductor process chamber (102 in FIG. 1) are mixed and reacted. The exhaust gas reaction unit (156) has a cylindrical shape with the exhaust gas inlet (152) and the exhaust gas outlet (154) coaxially, and the exhaust gas reaction space (157) formed therein has a cylindrical shape corresponding to the external shape of the exhaust gas reaction unit (156). The exhaust gas reaction space (157) is generally a low disk shape and has a larger diameter than the chamber exhaust pipe (107 in FIG. 1). Accordingly, the exhaust gas reaction space (157) has a size that is expanded outwardly more than the chamber exhaust pipe (107 in FIG. 1). The exhaust gas reaction space (157) is connected to the chamber exhaust pipe (107 in FIG. 1) through the exhaust gas inlet (152) and the exhaust gas discharge (154). A plasma inlet (158) connected to a plasma supply pipe (170) is formed on the outer periphery of the exhaust gas reaction section (156). Reactive species generated in the plasma reactor (110 in FIG. 1) are introduced into the exhaust gas reaction space (157) through the plasma inlet (158).

[0060] A cooling means (160) is installed in the exhaust gas reaction section (156) of the chamber body (151) to prevent damage to the equipment due to overheating by lowering the temperature of the exhaust gas reaction chamber (150) using cooling water. The cooling means (160) has three cooling jackets (161, 163, 165) and four cooling fluid pipes (166, 167, 168, 169) connected to the three cooling jackets (161, 163, 165).

[0061] Among the three cooling jackets (161, 163, 165), one (161) is an outer peripheral cooling jacket that surrounds the outer surface of the exhaust gas reaction unit (156), the other (163) is an upstream end cooling jacket installed outside the upstream end of the exhaust gas reaction unit (156), and the remaining one (165) is a downstream end cooling jacket installed outside the downstream end of the exhaust gas reaction unit (156). An outer peripheral cooling fluid receiving space (161a) for receiving a cooling fluid such as a cooling water is formed inside the outer peripheral cooling jacket (161). An upstream cooling fluid receiving space (163a) for receiving a cooling fluid such as a cooling water is formed inside the upstream end cooling jacket (163). A downstream cooling fluid receiving space (165a) for receiving a cooling fluid such as a cooling water is formed inside the downstream end cooling jacket (165). The exhaust gas reaction unit (156) is cooled by the cooling fluid contained in the cooling fluid receiving space (161a, 163a, 165a) of each of the three cooling jackets (161, 163, 165). Four cooling fluid pipes (166, 167, 168, 169) are connected to the three cooling jackets (161, 163, 165). Although the present embodiment describes three cooling jackets, the present invention is not limited thereto. The number of cooling jackets may be two or less or four or more, and this also falls within the scope of the present invention.

[0062] Four cooling fluid pipes (166, 167, 168, 169) are connected to three cooling jackets (161, 163, 165). One of the four cooling fluid pipes (166, 167, 168, 169) is a first cooling fluid inlet pipe connected to the upstream end cooling jacket (163), another (167) is a second cooling fluid inlet pipe connected to the downstream end cooling jacket (165), another (168) is a first connecting pipe connecting the upstream end cooling jacket (163) and the outer cooling jacket (161), and the remaining one (169) is a second connecting pipe connecting the downstream end cooling jacket (165) and the outer cooling jacket (161). A cooling fluid (C), such as a cooling water, flows into the upstream end cooling jacket (163) through the first cooling water inlet / outlet pipe (166), the cooling fluid of the upstream end cooling jacket (163) flows into the outer cooling jacket (161) through the first connecting pipe (168), the cooling fluid of the outer cooling jacket (161) flows into the downstream end cooling jacket (165) through the second connecting pipe (169), and the cooling water of the downstream end cooling jacket (165) is discharged through the second cooling water inlet / outlet pipe (167). In the present embodiment, the cooling fluid is described as being introduced through the first cooling water inlet / outlet pipe (166) and discharged through the second cooling water inlet / outlet pipe (167), but alternatively, the cooling fluid may also be introduced through the second cooling water inlet / outlet pipe (167) and discharged through the first cooling water inlet / outlet pipe (166), and this also falls within the scope of the present invention.

[0063] Referring to FIG. 2, a plasma supply pipe (170) connects a plasma reactor (110) and a plasma inlet (158) of an exhaust gas reaction chamber (150). Reactive species generated in the plasma reactor (110) are supplied to an exhaust gas reaction space (157) of the exhaust gas reaction chamber (150) through the plasma supply pipe (170). FIG. 8 illustrates the configuration of the plasma supply pipe (170). Referring to FIG. 8, a plasma supply passage (171) connecting the plasma reactor (110) and the exhaust gas reaction chamber (150) and a cooling fluid passage (175) formed to surround the plasma supply passage (171) from the outside are formed in the plasma supply pipe (170). Reactive species generated in the plasma reactor (110) are supplied to an exhaust gas reaction space (157) of the exhaust gas reaction chamber (150) through the plasma supply passage (171). A cooling fluid such as coolant flows through the cooling fluid passage (175) to lower the temperature of the gas flowing into the exhaust gas reaction chamber (150) through the plasma supply passage (171), thereby improving the cooling performance in the exhaust gas reaction chamber (150).

[0064] Fig. 9 illustrates a state in which pretreatment of exhaust gas containing B2H6 generated by the LFW (Low-Fluorine Tungsten) process is performed in an exhaust gas reaction chamber (150). Referring to Fig. 9, in the exhaust gas reaction chamber (150), excited fluorine atoms (F) are generated as reactive active species in the process in which B2H6 contained in the exhaust gas decomposes nitrogen trifluoride (NF3) into plasma. * ) and fluorine (F2), and B2H6 is removed by generating boron trifluoride (BF3) and hydrofluoric acid (HF). By removing B2H6, the film-like W X The production of by-products is prevented. Although not shown, the reactive species (F) that are discharged without reacting in the exhaust gas reaction chamber (150) *) is introduced into the vacuum pump (106 in FIG. 1) and reacts with the tungsten (W) deposited in the vacuum pump (106 in FIG. 1) to generate tungsten hexafluoride (WF6) gas, thereby removing the tungsten deposited in the vacuum pump (106 in FIG. 1). In addition, although not shown, fluorine (F2) discharged without reacting in the exhaust gas reaction chamber (150) is introduced into the vacuum pump (106 in FIG. 1) and reacts with the hydrocarbon (C) deposited in the vacuum pump (106 in FIG. 1). X H Y ) reacts with carbon tetrafluoride (CF4) and hydrofluoric acid (HF), thereby depositing hydrocarbons (C) deposited on the vacuum pump (106 in Fig. 1). X H Y ) may be removed.

[0065] Fig. 10 illustrates a state in which pretreatment of exhaust gas containing hydrogenated amorphous carbon (aC:H) generated by the ACL (Amorphous Carbon Layer) process is performed in an exhaust gas reaction chamber (150). Referring to Fig. 10, excited oxygen atoms (O) are generated as reactive active species in the process in which hydrogenated amorphous carbon (aC:H) included in the exhaust gas decomposes oxygen (O2) into plasma in the exhaust gas reaction chamber (150). * ) and hydrogenated amorphous carbon (aC:H) is removed by reacting with the gas to produce carbon dioxide gas (CO2) and water vapor (H2O). Although not shown, the reactive species (O) that are discharged without reacting in the exhaust gas reaction chamber (150) * ) is introduced into the vacuum pump (106 in FIG. 1) and reacts with the hydrogenated amorphous carbon (aC:H) deposited on the vacuum pump (106 in FIG. 1) to generate carbon dioxide gas (CO2) and water vapor (H2O), thereby removing the hydrogenated amorphous carbon (aC:H) deposited on the vacuum pump (106 in FIG. 1).

[0066] Fig. 11 illustrates a state in which pretreatment of exhaust gas containing SiO2 powder generated by the TEOS process is performed in an exhaust gas reaction chamber (150). Referring to Fig. 11, in the exhaust gas reaction chamber (150), excited fluorine atoms (F) are generated as reactive species in the process in which SiO2 powder included in the exhaust gas decomposes nitrogen trifluoride (NF3) into plasma. * ) reacts with silicon tetrafluoride (SiF4) gas to remove SiO2 powder. By removing SiO2 powder, deposition of SiO2 powder is prevented from being deposited on the vacuum pump (106 in Fig. 1). Although not shown, the reactive species (F) that are discharged without reacting in the exhaust gas reaction chamber (150) * ) is introduced into the vacuum pump (106 in Fig. 1) and reacts with the SiO2 powder deposited on the vacuum pump (106 in Fig. 1) to generate silicon tetrafluoride (SiF4) gas, thereby removing the SiO2 powder deposited on the vacuum pump (106 in Fig. 1).

[0067] While the present invention has been described through the above examples, the present invention is not limited thereto. The above examples may be modified or altered without departing from the spirit and scope of the present invention, and those skilled in the art will recognize that such modifications and variations also fall within the scope of the present invention.

Claims

1. Equipment for pre-treating exhaust gas discharged through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump by a vacuum pump from a semiconductor process chamber where a semiconductor manufacturing process using process gas is performed. An exhaust gas reaction chamber installed on the chamber exhaust pipe; and A plasma reactor is included, which generates plasma to decompose a source gas and generates plasma gas containing reactive species, The above exhaust gas reaction chamber comprises an exhaust gas reaction section that forms an exhaust gas reaction space inside the exhaust gas in which the component to be treated contained in the exhaust gas and the reaction active species are mixed and reacted, and a cooling means installed in the exhaust gas reaction section. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

2. In claim 1, The above cooling means is provided with a cooling jacket installed outside the exhaust gas reaction section and having a cooling fluid receiving space formed therein in which a cooling fluid is received. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

3. In claim 2, The above cooling jackets are in multiples, The above cooling means further comprises a cooling fluid pipe connecting the plurality of cooling jackets. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

4. In claim 1, The above exhaust gas reaction section is a columnar shape that extends further outward than the chamber exhaust pipe. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

5. In claim 4, The above cooling means is provided with an outer cooling jacket that is installed to surround the outer surface of the exhaust gas reaction section and has an outer cooling fluid receiving space formed therein in which a cooling fluid is received. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

6. In claim 5, The cooling means further comprises an upstream end cooling jacket installed at the upstream end of the exhaust gas reaction section and having an upstream end cooling fluid receiving space in which a cooling fluid is received inside, and a downstream end cooling jacket installed at the downstream end of the exhaust gas reaction section and having a downstream end cooling fluid receiving space in which a cooling fluid is received inside. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

7. In claim 6, The above cooling means further comprises a first connecting pipe connecting the upstream end cooling jacket and the outer peripheral cooling jacket, and a second connecting pipe connecting the downstream end cooling jacket and the outer peripheral cooling jacket. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

8. In claim 7, The cooling means further comprises a first cooling fluid inlet / outlet pipe communicating with the upstream end cooling jacket, and a second cooling fluid inlet / outlet pipe communicating with the downstream end cooling jacket. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

9. In claim 1, It further includes a plasma supply pipe connecting the exhaust gas reaction chamber and the plasma reactor, The plasma supply pipe has a plasma supply passage through which the plasma gas generated in the plasma reactor is discharged and flows, and a cooling fluid passage through which the cooling fluid flows. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

10. Equipment for pre-treating exhaust gas discharged through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump by a vacuum pump from a semiconductor process chamber where a semiconductor manufacturing process using process gas is performed. An exhaust gas reaction chamber installed on the above chamber exhaust pipe; A plasma reactor that generates plasma to decompose a source gas and generates a plasma gas containing reactive species; and It includes a plasma supply pipe connecting the exhaust gas reaction chamber and the plasma reactor, The plasma supply pipe has a plasma supply passage through which the plasma gas generated in the plasma reactor is discharged and flows, and a cooling fluid passage through which the cooling fluid flows. The above exhaust gas reaction chamber has an exhaust gas reaction section that forms an exhaust gas reaction space inside the chamber in which the component to be treated contained in the exhaust gas and the reaction active species introduced through the plasma supply passage are mixed and reacted. Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

11. In claim 1 or claim 10, The above source gas is nitrogen trifluoride (NF3), The above reaction active species is an excited fluorine atom (F * ), including Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

12. In claim 11, The above exhaust gas contains diborane (B2H6), The above diborane is the excited fluorine atom (F * ) is removed by reacting with Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

13. In claim 11, The tungsten deposited in the above vacuum pump is excited by fluorine atoms (F * ) is removed by reacting with Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

14. In claim 11, The above exhaust gas contains SiO2 powder, The above SiO2 powder is the excited fluorine atom (F * ) is removed by reacting with Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

15. In claim 1 or claim 10, The above source gas is oxygen (O2), The above reaction active species is an excited oxygen atom (O * ), including Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

16. In claim 15, The above exhaust gas contains hydrogenated amorphous carbon (aC:H), The above hydrogenated amorphous carbon (aC:H) is the excited oxygen atom (O * ) is removed by reacting with Exhaust gas pretreatment equipment for semiconductor manufacturing facilities.

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