Substrate processing device and substrate processing method

Abstract

This substrate processing device comprises a processing liquid storage portion, an inflow pipe, at least one circulation pipe, a pump, a filter unit, a pressure adjustment valve, and a control unit. The processing liquid flows into the inflow pipe from the processing liquid storage portion. The at least one circulation pipe has an upstream end that is connected to the inflow pipe and a downstream end that is connected to the processing liquid storage portion, and circulates the processing liquid. The pressure adjustment valve adjusts the pressure of a gas that is supplied to the pump, and adjusts a discharge pressure that indicates the pressure at which the pump discharges the processing liquid. The control unit executes a pressure increase by controlling the pressure adjustment valve at the start of driving of the pump. The pressure increase includes a process of gradually increasing the pressure of the gas that is supplied to the pump in order to gradually increase the discharge pressure to a target pressure.

Description

Substrate processing apparatus and substrate processing method Related Applications

[0001] This application claims priority based on Japanese Patent Application No. 2023-108182 filed on June 30, 2023, the entire contents of which are incorporated herein by reference.

[0002] The present invention relates to a substrate processing apparatus and a substrate processing method.

[0003] A substrate processing apparatus including a circulation line is known (see, for example, Patent Document 1). The circulation line is provided with a pump and a filter. The pump sends a processing liquid so that the processing liquid circulates through the circulation line. The filter removes foreign matter from the processing liquid circulating through the circulation line.

[0004] Substrate processing apparatuses may stop operating when a processing liquid is replaced, a recovery operation is performed after a problem has occurred, etc. When the operation of the substrate processing apparatus stops, the circulation of the processing liquid in the circulation line also stops. When the operation of the substrate processing apparatus resumes after the processing liquid replacement operation or the recovery operation is completed, the circulation of the processing liquid through the circulation line also resumes.

[0005] However, when the circulation of the processing liquid is resumed, the discharge pressure of the pump may cause the foreign matter trapped in the filter to be released from the filter, resulting in an increase in the number of foreign matter adhering to the substrate. This problem is caused by the large pressure that is suddenly applied to the filter in response to the discharge pressure of the pump.

[0006] To address this problem, Patent Document 1 describes a technique for controlling a back pressure valve and a pump provided in the circulation line when the circulation of the treatment liquid is restarted, thereby preventing foreign matter from being released from the filter.

[0007] Specifically, first, the control unit controls the backpressure valve to maintain the valve opening at its maximum valve opening. Then, the control unit adjusts the regulator so that the pump discharge pressure becomes the first pressure, and then drives the pump. As a result, circulation of the treatment liquid resumes. Then, the control unit controls the backpressure valve to maintain the pressure upstream of the filter at a predetermined constant value. After controlling the pressure upstream of the filter to the predetermined constant value, the control unit controls the backpressure valve to reduce its valve opening. Then, the control unit adjusts the regulator so that the pump discharge pressure becomes the second pressure after a predetermined time has elapsed since the pump started operating. Here, the second pressure indicates the maximum discharge pressure of the pump, and the first pressure indicates a pressure lower than the second pressure (the pump's maximum discharge pressure). The predetermined time from the start of the pump operation is adjusted to the time required for the differential pressure between the upstream and downstream sides of the filter to stabilize.

[0008] According to the technology described in Patent Document 1, when the circulation of the treatment liquid is resumed, the differential pressure between the upstream and downstream sides of the filter is prevented from becoming greater than the differential pressure resistance of the filter, thereby preventing foreign matter from slipping through the filter and contaminating the circulation line.

[0009] JP 2019-41039 A

[0010] The inventors of the present application have conducted extensive research into a technique for suppressing an increase in foreign matter adhering to a substrate when the circulation of the processing liquid is restarted, using a means different from that described in Patent Document 1.

[0011] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can suppress an increase in foreign matter adhering to a substrate when the circulation of a processing liquid is restarted.

[0012] According to one aspect of the present invention, a substrate processing apparatus processes substrates using a processing liquid. The substrate processing apparatus includes a processing liquid storage unit, an inlet pipe, at least one circulation pipe, a pump, a filter unit, a pressure adjustment valve, and a control unit. The processing liquid storage unit stores the processing liquid. The processing liquid flows into the inlet pipe from the processing liquid storage unit. The at least one circulation pipe has an upstream end connected to the inlet pipe and a downstream end connected to the processing liquid storage unit, and circulates the processing liquid. The pump is disposed in the inlet pipe. The pump is driven by gas pressure to circulate the processing liquid. The filter unit is disposed in the inlet pipe. The filter unit removes foreign matter from the processing liquid. The pressure adjustment valve adjusts the pressure of the gas supplied to the pump to adjust a discharge pressure indicating the pressure at which the pump discharges the processing liquid. The control unit controls the pressure adjustment valve to perform a pressure increase process when the pump starts to operate. The pressure increase process includes a process of gradually increasing the pressure of the gas supplied to the pump, thereby gradually increasing the discharge pressure to a target pressure.

[0013] In one embodiment, the substrate processing apparatus further includes a storage unit configured to store history information indicating information related to a usage history of the filter unit, and the control unit adjusts a period during which the discharge pressure is gradually increased by the pressure increase process based on the history information.

[0014] In one embodiment, the control unit adjusts the period during which the discharge pressure is gradually increased by the pressure increase process by adjusting the pressure of the gas supplied to the pump at the start of the pressure increase process based on the history information.

[0015] In one embodiment, the at least one circulation pipe includes a first circulation pipe and a second circulation pipe that is shorter than the first circulation pipe. The substrate processing apparatus further includes a circulation control mechanism. The circulation control mechanism controls the circulation of the processing liquid through the first circulation pipe and the circulation of the processing liquid through the second circulation pipe. The controller controls the circulation control mechanism when the pump starts to be driven to start the circulation of the processing liquid through the second circulation pipe. The controller controls the circulation control mechanism while the discharge pressure is gradually increased by the pressure increase process to start the circulation of the processing liquid through the first circulation pipe and stop the circulation of the processing liquid through the second circulation pipe.

[0016] In one embodiment, the pump has a first gas chamber, a second gas chamber, a first liquid chamber, and a second liquid chamber. The gas flows into the first gas chamber and the second gas chamber. The treatment liquid flows into the first liquid chamber and the second liquid chamber. The first gas chamber and the second gas chamber each have a variable volume. The first liquid chamber and the second liquid chamber each have a variable volume. When the gas flows into the first gas chamber, the treatment liquid is delivered from the first liquid chamber to the inlet pipe. When the gas flows into the second gas chamber, the treatment liquid is delivered from the second liquid chamber to the inlet pipe.

[0017] According to another aspect of the present invention, a substrate processing apparatus is an apparatus for processing substrates using a processing liquid. The substrate processing apparatus includes a processing liquid storage unit, an inlet pipe, at least one circulation pipe, a circulation control mechanism, a pump, a filter unit, a drain pipe, a drain valve, and a control unit. The processing liquid storage unit stores the processing liquid. The processing liquid flows into the inlet pipe from the processing liquid storage unit. The at least one circulation pipe has an upstream end connected to the inlet pipe and a downstream end connected to the processing liquid storage unit, and circulates the processing liquid. The circulation control mechanism controls the circulation of the processing liquid through the at least one circulation pipe. The pump is disposed in the inlet pipe. The pump circulates the processing liquid. The filter unit is disposed in the inlet pipe. The filter unit removes foreign matter from the processing liquid. The drain pipe discharges the processing liquid. The drain valve is disposed in the drain pipe. The drain valve controls the flow of the processing liquid through the drain pipe. The control unit controls the circulation control mechanism, a discharge pressure indicating the pressure at which the pump discharges the treatment liquid, and the drain valve to perform a drainage process, a circulation start process, and a pressurization process. The filter unit has a filter membrane. The filter membrane captures the foreign matter contained in the treatment liquid. The drainage pipe discharges the treatment liquid that has passed through the filter membrane. The drainage process includes, when the pump starts to be driven, increasing the discharge pressure to a first pressure and controlling the drainage valve to discharge the treatment liquid from the drainage pipe. The control unit reduces the discharge pressure to a second pressure lower than the first pressure in response to discharging the treatment liquid from the drainage pipe. The control unit performs the circulation start process and the pressurization process in response to reducing the discharge pressure from the first pressure to the second pressure. The circulation start process includes a process of controlling the circulation control mechanism and the drain valve to stop the discharge of the processing liquid from the drain pipe and to start the circulation of the processing liquid through one of the at least one circulation pipe.The pressure increasing process includes a process of increasing the discharge pressure stepwise to a third pressure higher than the second pressure, or a process of gradually increasing the discharge pressure to a third pressure higher than the second pressure.

[0018] In one embodiment, the drainage pipe is connected to the filter unit or the inlet pipe.

[0019] In one embodiment, the drainage pipe is connected to the inlet pipe upstream of a connection point between each of the at least one circulation pipe and the inlet pipe.

[0020] In one embodiment, the substrate processing apparatus further includes a storage unit configured to store history information indicating information related to a usage history of the filter unit, and the control unit adjusts a period during which the discharge pressure is increased stepwise or gradually by the pressure increase process based on the history information.

[0021] In one embodiment, the control unit adjusts the period during which the discharge pressure is gradually increased by the pressure increase process by adjusting the pressure of the gas supplied to the pump at the start of the pressure increase process based on the history information.

[0022] In one embodiment, the at least one circulation pipe includes a first circulation pipe and a second circulation pipe that is shorter than the first circulation pipe. The circulation control mechanism controls the circulation of the treatment liquid through the first circulation pipe and the circulation of the treatment liquid through the second circulation pipe. The circulation start process includes a process of controlling the circulation control mechanism to start the circulation of the treatment liquid through the second circulation pipe. The control unit controls the circulation control mechanism to start the circulation of the treatment liquid through the first circulation pipe and stop the circulation of the treatment liquid through the second circulation pipe while the discharge pressure is being increased stepwise or gradually by the pressure increase process.

[0023] In one embodiment, the pump is driven by gas pressure.

[0024] In one embodiment, the pump has a first gas chamber, a second gas chamber, a first liquid chamber, and a second liquid chamber. The gas flows into the first gas chamber and the second gas chamber. The treatment liquid flows into the first liquid chamber and the second liquid chamber. The first gas chamber and the second gas chamber each have a variable volume. The first liquid chamber and the second liquid chamber each have a variable volume. When the gas flows into the first gas chamber, the treatment liquid is delivered from the first liquid chamber to the inlet pipe. When the gas flows into the second gas chamber, the treatment liquid is delivered from the second liquid chamber to the inlet pipe.

[0025] In one embodiment, the first pressure is greater than the third pressure.

[0026] In one embodiment, the second pressure includes a pressure when the pump is not driven.

[0027] According to yet another aspect of the present invention, a substrate processing method is a method for processing a substrate using a substrate processing apparatus. The substrate processing apparatus includes a processing liquid storage unit, an inlet pipe, at least one circulation pipe, a pump, and a filter unit. The processing liquid storage unit stores a processing liquid used in processing the substrate. The processing liquid flows into the inlet pipe from the processing liquid storage unit. The at least one circulation pipe has an upstream end connected to the inlet pipe and a downstream end connected to the processing liquid storage unit, and circulates the processing liquid. The pump is disposed in the inlet pipe. The pump is driven by gas pressure to circulate the processing liquid. The filter unit is disposed in the inlet pipe. The filter unit removes foreign matter from the processing liquid. The substrate processing method includes a circulation start step of starting operation of the pump to start circulation of the processing liquid. The circulation start step includes a step of performing a pressurization process when operation of the pump is started. The pressure increase process includes a process of gradually increasing the pressure of the gas supplied to the pump, thereby gradually increasing a discharge pressure indicating the pressure at which the pump discharges the treatment liquid.

[0028] In one embodiment, the substrate processing method further includes adjusting a period of time during which the discharge pressure is gradually increased by the pressure increasing process, based on history information indicating information related to a usage history of the filter unit.

[0029] In one embodiment, the substrate processing method further includes a step of adjusting the period during which the discharge pressure is gradually increased by the pressurization process by adjusting the pressure of the gas supplied to the pump at the start of the pressurization process based on history information indicating information related to the usage history of the filter unit.

[0030] In one embodiment, the at least one circulation pipe includes a first circulation pipe and a second circulation pipe that is shorter than the first circulation pipe, and the circulation starting step includes a step of starting circulation of the treatment liquid through the second circulation pipe when the pump starts to be driven, and a step of starting circulation of the treatment liquid through the first circulation pipe and stopping circulation of the treatment liquid through the second circulation pipe while the discharge pressure is gradually increased by the pressurization process.

[0031] According to yet another aspect of the present invention, a substrate processing method is a method for processing a substrate using a substrate processing apparatus. The substrate processing apparatus includes a processing liquid storage section, an inlet pipe, at least one circulation pipe, a pump, a filter section, and a drain pipe. The processing liquid storage section stores a processing liquid used in processing the substrate. The processing liquid flows into the inlet pipe from the processing liquid storage section. The at least one circulation pipe has an upstream end connected to the inlet pipe and a downstream end connected to the processing liquid storage section, and circulates the processing liquid. The pump is disposed in the inlet pipe. The pump circulates the processing liquid. The filter section is disposed in the inlet pipe. The filter section removes foreign matter from the processing liquid. The drain pipe discharges the processing liquid. The filter section has a filter membrane. The filter membrane captures the foreign matter contained in the processing liquid. The drain pipe discharges the processing liquid that has passed through the filter membrane. The substrate processing method includes the steps of: increasing a discharge pressure, which indicates a pressure at which the pump discharges the processing liquid, to a first pressure when the pump starts to drive, and discharging the processing liquid from the drainage pipe; reducing the discharge pressure to a second pressure lower than the first pressure in response to the discharge of the processing liquid from the drainage pipe; and performing a circulation start process and a pressurization process in response to the reduction of the discharge pressure from the first pressure to the second pressure. The circulation start process includes a process of starting circulation of the processing liquid through one of the at least one circulation pipes and stopping the discharge of the processing liquid from the drainage pipe. The pressurization process includes a process of gradually increasing the discharge pressure to a third pressure higher than the second pressure or a process of gradually increasing the discharge pressure to a third pressure higher than the second pressure.

[0032] In one embodiment, the substrate processing method further includes a step of adjusting a period during which the discharge pressure is increased stepwise or gradually by the pressure increase process, based on history information indicating information related to a usage history of the filter unit.

[0033] In one embodiment, the substrate processing method further includes a step of adjusting the period during which the discharge pressure is gradually increased by the pressurization process by adjusting the pressure of the gas supplied to the pump at the start of the pressurization process based on history information indicating information related to the usage history of the filter unit.

[0034] In one embodiment, the at least one circulation pipe includes a first circulation pipe and a second circulation pipe that is shorter than the first circulation pipe. The circulation start process includes starting circulation of the processing liquid through the second circulation pipe. The substrate processing method further includes starting circulation of the processing liquid through the first circulation pipe and stopping circulation of the processing liquid through the second circulation pipe during the stepwise or gradual increase of the discharge pressure by the pressurization process.

[0035] In one embodiment, the first pressure is greater than the third pressure.

[0036] In one embodiment, the step of reducing the discharge pressure to the second pressure, which is lower than the first pressure, includes the step of stopping the driving of the pump.

[0037] 6A is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention; FIG. 6B is a timing chart showing the operation of each external circulation valve when the operation of the substrate processing apparatus is resumed; FIG. 6C is a timing chart showing the pump discharge pressure when the operation of the substrate processing apparatus is resumed; FIG. 6D is a timing chart showing the gas supply pressure when the operation of the substrate processing apparatus is resumed; FIG. 7A is a timing chart showing another example of the operation of each external circulation valve when the operation of the substrate processing apparatus is resumed; FIG. 7B is a timing chart showing another example of the pump discharge pressure when the operation of the substrate processing apparatus is resumed; FIG. 7C is a timing chart showing another example of the gas supply pressure when the operation of the substrate processing apparatus is resumed; FIG. 8A is a timing chart showing the operation of the internal circulation valve when the operation of the substrate processing apparatus is resumed; FIG. 8B is a timing chart showing the operation of each external circulation valve when the operation of the substrate processing apparatus is resumed. FIG. 8C is a timing chart showing the pump discharge pressure when the operation of the substrate processing apparatus is resumed. FIG. 8D is a timing chart showing the gas supply pressure when the operation of the substrate processing apparatus is resumed. A diagram showing the flow of a substrate processing method according to a third embodiment of the present invention. FIG. 10A is a timing chart showing the operation of each internal circulation valve when the operation of the substrate processing apparatus is resumed. FIG. 10B is a timing chart showing the operation of each external circulation valve when the operation of the substrate processing apparatus is resumed. FIG. 10C is a timing chart showing the pump discharge pressure when the operation of the substrate processing apparatus is resumed. FIG. 10D is a timing chart showing the gas supply pressure when the operation of the substrate processing apparatus is resumed. A diagram showing the configuration of a fluid cabinet included in a substrate processing apparatus according to a fourth embodiment of the present invention. A diagram showing the flow of a substrate processing method according to the fourth embodiment of the present invention.FIG. 13A is a timing chart showing the operation of the drain valve when the operation of the substrate processing apparatus is resumed. FIG. 13B is a timing chart showing the operation of the internal circulation valve when the operation of the substrate processing apparatus is resumed. FIG. 13C is a timing chart showing the operation of each external circulation valve when the operation of the substrate processing apparatus is resumed. FIG. 13D is a timing chart showing the pump discharge pressure when the operation of the substrate processing apparatus is resumed. FIG. 14A is a timing chart showing another example (Alternative Example 1) of the operation of the drain valve when the operation of the substrate processing apparatus is resumed. FIG. 14B is a timing chart showing another example (Alternative Example 1) of the operation of the internal circulation valve when the operation of the substrate processing apparatus is resumed. FIG. 14C is a timing chart showing another example (Alternative Example 1) of the operation of each external circulation valve when the operation of the substrate processing apparatus is resumed. FIG. 14D is a timing chart showing another example (Alternative Example 1) of the pump discharge pressure when the operation of the substrate processing apparatus is resumed. A diagram showing another example (Alternative Example 2) of the configuration of a fluid cabinet included in a substrate processing apparatus according to embodiment 4 of the present invention.

[0038] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings (FIGS. 1 to 15). However, the present invention is not limited to the following embodiments, and can be implemented in various forms without departing from the spirit of the present invention. Note that where explanations are redundant, they may be omitted as appropriate. Furthermore, in the drawings, identical or equivalent parts are designated by the same reference numerals, and explanations thereof will not be repeated.

[0039] The "substrate" to be processed in the substrate processing apparatus and substrate processing method according to the present invention can be a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a magneto-optical disk. The following description of the embodiment of the present invention will be primarily focused on the case where a disk-shaped semiconductor wafer is the substrate to be processed. However, the substrate processing apparatus and substrate processing method according to the present invention can be similarly applied to various substrates other than the semiconductor wafers described above. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus and substrate processing method according to the present invention can be applied to substrates of various shapes.

[0040] First Embodiment First, a first embodiment of the present invention will be described with reference to FIGS. 1 to 5, 6A to 6D, and 7A to 7C. FIG. 1 is a schematic plan view of a substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 processes substrates W using a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one by one. Hereinafter, the processing of substrates W using a processing liquid may be referred to as "substrate processing." Note that the substrate processing apparatus 100 is not particularly limited as long as it is an apparatus that processes substrates W. For example, the substrate processing apparatus 100 may be a cleaning apparatus, an etching apparatus, a coating apparatus, a developing apparatus, or a film-forming apparatus.

[0041] As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 2, a fluid cabinet 101, a plurality of fluid boxes 102, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 110.

[0042] Each load port LP accommodates a stack of substrates W. The indexer robot IR transports substrates W between the load port LP and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and the substrate processing unit 2. Note that a placement stage (path) on which substrates W are temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured to transfer substrates W indirectly between the indexer robot IR and the center robot CR via the placement stage.

[0043] The substrate processing units 2 form a plurality of towers TW (four towers TW in FIG. 1 ). The towers TW are arranged to surround the center robot CR in a plan view. Each tower TW is formed by a plurality of substrate processing units 2 (three substrate processing units 2 in FIG. 1 ) stacked one above the other.

[0044] The fluid cabinet 101 contains a processing liquid. Each of the fluid boxes 102 corresponds to one of the multiple towers TW. The processing liquid in the fluid cabinet 101 is supplied to all of the substrate processing units 2 included in the tower TW corresponding to the fluid box 102 via one of the fluid boxes 102. Each of the substrate processing units 2 supplies the processing liquid to the upper surface of the substrate W. As a result, the substrate W is processed by the processing liquid.

[0045] The processing liquid is not particularly limited as long as it is a liquid that comes into contact with the substrate W. The processing liquid includes, for example, a chemical liquid. The chemical liquid includes, for example, diluted hydrofluoric acid (DHF), hydrofluoric acid (HF), hydrofluoric nitric acid (hydrofluoric acid and nitric acid (HNO ３ ), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H ３ P.O. ４ ), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia water, hydrogen peroxide water, organic acid (e.g., citric acid, oxalic acid), organic alkali (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid hydrogen peroxide water mixture (SPM), ammonia hydrogen peroxide water mixture (SC1), hydrochloric acid hydrogen peroxide water mixture (SC2), isopropyl alcohol (IPA), surfactant, or corrosion inhibitor.

[0046] Alternatively, the chemical solution may be an organic solvent such as IPA. Specifically, the organic solvent may contain alcohols such as IPA, ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether, ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate, propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether (PGEE), propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monoethyl ether acetate, lactic acid esters such as methyl lactate and ethyl lactate (EL), aromatic hydrocarbons such as toluene and xylene, ketones such as methyl ethyl ketone, 2-heptanone, and cyclohexanone, amides such as N,N-dimethylacetamide and N-methylpyrrolidone, lactones such as γ-butyrolactone, etc. These organic solvents may be used alone or in combination of two or more.

[0047] The control device 110 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 110 controls the fluid cabinet 101, the fluid box 102, the load port LP, the indexer robot IR, the center robot CR, and the substrate processing unit 2. The control device 110 includes a control unit 111 and a memory unit 112.

[0048] The control unit 111 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 112. The control unit 111 has, for example, a processor. The control unit 111 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 111 may have a general-purpose computing device or a dedicated computing device.

[0049] The storage unit 112 stores various types of information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 112 stores data and computer programs. The computer programs include a computer program that defines a processing procedure for restarting the operation of the substrate processing apparatus 100 after the operation of the substrate processing apparatus 100 has stopped. The data includes various types of recipe data. The recipe data includes, for example, a process recipe. The process recipe defines a procedure for substrate processing.

[0050] The storage unit 112 includes a main storage device. The main storage device may be, for example, a semiconductor memory. The storage unit 112 may further include an auxiliary storage device. The auxiliary storage device may be, for example, a semiconductor memory or a hard disk drive. The storage unit 112 may include removable media.

[0051] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 and 2. Figure 2 is a diagram showing the configuration of a substrate processing unit 2, a fluid cabinet 101, and a fluid box 102 included in the substrate processing apparatus 100 of this embodiment.

[0052] 2, each substrate processing unit 2 includes a chamber 4, a spin chuck 6, and a discharge nozzle 8. The chamber 4 houses the spin chuck 6 and the discharge nozzle 8.

[0053] The spin chuck 6 holds the substrate W. Specifically, the substrate W is held in a horizontal position by the spin chuck 6. The spin chuck 6 also rotates the substrate W that it holds. Specifically, the spin chuck 6 rotates the substrate W around the center of the substrate W.

[0054] The discharge nozzle 8 supplies the processing liquid to the substrate W. More specifically, the discharge nozzle 8 discharges the processing liquid toward the rotating substrate W. The discharge nozzle 8 may discharge the processing liquid toward the substrate W from a position facing the center of the substrate W, or may discharge the processing liquid toward the substrate W while moving above the substrate W.

[0055] 2, the substrate processing apparatus 100 includes an individual supply pipe 17 and an individual valve 31 for each substrate processing section 2. The individual valve 31 is housed in a fluid box 102.

[0056] The downstream end of each of the individual supply pipes 17 is connected to a corresponding discharge nozzle 8. The individual supply pipes 17 are tubular members through which the processing liquid flows, and allow the processing liquid to flow up to the corresponding discharge nozzle 8. The individual valves 31 are provided on the individual supply pipes 17 and control the start and stop of supply of the processing liquid to the discharge nozzles 8. More specifically, the individual valves 31 are openable and closable on-off valves. When the individual valves 31 are opened, the supply of the processing liquid starts. When the individual valves 31 are closed, the supply of the processing liquid stops. The opening and closing operations of the individual valves 31 are controlled by the control device 110 (control unit 111).

[0057] The substrate processing apparatus 100 further includes a processing liquid tank 11, an inlet pipe 13, and a plurality of external circulation pipes 15. The processing liquid tank 11 and the inlet pipe 13 are housed in a fluid cabinet 101. The processing liquid tank 11 stores the processing liquid. The processing liquid tank 11 is an example of a "processing liquid storage section."

[0058] Each of the external circulation pipes 15 corresponds to one of the plurality of towers TW. In other words, each of the external circulation pipes 15 corresponds to one of the plurality of fluid boxes 102.

[0059] The processing liquid flows into the inlet pipe 13 from the processing liquid tank 11. The inlet pipe 13 is a tubular member through which the processing liquid flows. More specifically, the upstream end of the inlet pipe 13 is connected to the processing liquid tank 11, and the processing liquid flows into the inlet pipe 13 from the upstream end of the inlet pipe 13.

[0060] Each external circulation pipe 15 is a tubular member through which the treatment liquid flows. The upstream end of each external circulation pipe 15 is connected to the inlet pipe 13. In this embodiment, the upstream end of each external circulation pipe 15 is connected to the downstream end of the inlet pipe 13. The downstream end of each external circulation pipe 15 is connected to the treatment liquid tank 11. Each external circulation pipe 15 circulates the treatment liquid. More specifically, the treatment liquid flows into each upstream end of the external circulation pipe 15 from the inlet pipe 13, and the treatment liquid flows through each external circulation pipe 15. As a result, the treatment liquid flows out from the downstream end of each external circulation pipe 15, and the treatment liquid returns to the treatment liquid tank 11. The external circulation pipe 15 is an example of a "circulation pipe" and a "first circulation pipe."

[0061] In each fluid box 102, the upstream ends of the corresponding plurality of individual supply pipes 17 are connected to the corresponding external circulation pipes 15. When the individual valves 31 are opened, a portion of the processing liquid circulating through the external circulation pipes 15 flows into the corresponding individual supply pipes 17. As a result, the processing liquid is supplied from the individual supply pipes 17 to the discharge nozzles 8, and the processing liquid is discharged from the discharge nozzles 8 toward the substrate W.

[0062] As shown in FIG. 2, the substrate processing apparatus 100 further includes an internal circulation pipe 19, a circulation pump 21, a pulse damper 23, a temperature regulator 25, a filter unit 27, and a circulation control mechanism .

[0063] The upstream end of the internal circulation pipe 19 is connected to the inlet pipe 13. More specifically, the upstream end of the internal circulation pipe 19 is connected to the inlet pipe 13 at a position upstream of connection point P1 between the inlet pipe 13 and each external circulation pipe 15. Therefore, connection point P1 between the inlet pipe 13 and each external circulation pipe 15 is located downstream of connection point P2 between the inlet pipe 13 and the internal circulation pipe 19. Hereinafter, connection point P1 between the inlet pipe 13 and each external circulation pipe 15 may be referred to as a "first connection point P1." Similarly, connection point P2 between the inlet pipe 13 and the internal circulation pipe 19 may be referred to as a "second connection point P2."

[0064] The internal circulation pipe 19 is a tubular member through which the processing liquid flows. The downstream end of the internal circulation pipe 19 is connected to the processing liquid tank 11. The internal circulation pipe 19 circulates the processing liquid. More specifically, the processing liquid flows into the upstream end of the internal circulation pipe 19 from the inlet pipe 13, and the processing liquid flows through the internal circulation pipe 19. As a result, the processing liquid flows out from the downstream end of the internal circulation pipe 19 and returns to the processing liquid tank 11. The internal circulation pipe 19 is an example of a "second circulation pipe."

[0065] The length of the internal circulation pipe 19 is shorter than the length of each external circulation pipe 15. The internal circulation pipe 19 is housed in the fluid cabinet 101. The internal circulation pipe 19 circulates the processing liquid within the fluid cabinet 101.

[0066] The circulation pump 21 is provided in the inlet pipe 13. The circulation pump 21 circulates the treatment liquid. Specifically, when the circulation pump 21 is driven, the treatment liquid is sent from the circulation pump 21. As a result, the treatment liquid circulates. In this embodiment, the circulation pump 21 is driven by gas pressure. The circulation pump 21 is controlled by the control device 110 (control unit 111).

[0067] The pulse damper 23 is provided in the inlet pipe 13. Specifically, the pulse damper 23 is provided downstream of the circulation pump 21. The pulse damper 23 suppresses pulsation of the treatment liquid pumped out from the circulation pump 21.

[0068] The temperature regulator 25 is provided in the inlet pipe 13. Specifically, the temperature regulator 25 is provided downstream of the circulation pump 21. In this embodiment, the temperature regulator 25 is provided downstream of the pulse damper 23. The temperature regulator 25 heats the treatment liquid flowing through the inlet pipe 13. Therefore, each of the outer circulation pipes 15 flows the treatment liquid heated by the temperature regulator 25. Similarly, the inner circulation pipe 19 flows the treatment liquid heated by the temperature regulator 25. The temperature regulator 25 includes, for example, a heater.

[0069] The filter unit 27 is provided in the inlet pipe 13 and removes foreign matter from the treatment liquid flowing through the inlet pipe 13. Specifically, the filter unit 27 is provided downstream of the circulation pump 21 and removes foreign matter from the treatment liquid delivered from the circulation pump 21. In this embodiment, the filter unit 27 is provided between the temperature regulator 25 and the first connection point P1. More specifically, the filter unit 27 is provided upstream of the second connection point P2. As a result, the clean treatment liquid from which foreign matter has been removed flows into the internal circulation pipe 19 and each external circulation pipe 15.

[0070] The circulation control mechanism 28 controls the circulation of the processing liquid through each external circulation pipe 15 and the circulation of the processing liquid through the internal circulation pipe 19. Specifically, the circulation control mechanism 28 controls the start and stop of circulation of the processing liquid through each external circulation pipe 15. The circulation control mechanism 28 also controls the start and stop of circulation of the processing liquid through the internal circulation pipe 19. The circulation control mechanism 28 is controlled by the control device 110 (control unit 111). In this embodiment, the circulation control mechanism 28 includes a plurality of external circulation valves 29 and an internal circulation valve 33.

[0071] Each external circulation valve 29 corresponds to one of the multiple external circulation pipes 15. Each external circulation valve 29 is provided in the corresponding external circulation pipe 15. Each external circulation valve 29 controls the start and stop of the flow of the treatment liquid in the corresponding external circulation pipe 15. The external circulation valve 29 is an example of a "circulation valve" and a "first circulation valve." More specifically, the external circulation valve 29 is an open / close valve that can be opened and closed. When the external circulation valve 29 is opened, the treatment liquid flows through the corresponding external circulation pipe 15. When the external circulation valve 29 is closed, the flow of the treatment liquid in the corresponding external circulation pipe 15 is stopped. The opening and closing operation of the external circulation valve 29 is controlled by the control device 110 (control unit 111). The multiple external circulation valves 29 are housed in the fluid cabinet 101.

[0072] The internal circulation valve 33 is provided in the internal circulation piping 19. The internal circulation valve 33 controls the start and stop of the flow of the processing liquid in the internal circulation piping 19. The internal circulation valve 33 is an example of a "second circulation valve", and more specifically, the internal circulation valve 33 is an open / close valve that can be opened and closed. When the internal circulation valve 33 is opened, the processing liquid flows through the internal circulation piping 19. When the internal circulation valve 33 is closed, the flow of the processing liquid in the internal circulation piping 19 stops. The opening and closing operation of the internal circulation valve 33 is controlled by the control device 110 (control unit 111). The internal circulation valve 33 is housed in the fluid cabinet 101.

[0073] The control device 110 (control unit 111) opens the external circulation valves 29 when circulating the treatment liquid through the external circulation pipes 15. The control device 110 (control unit 111) opens the internal circulation valve 33 when circulating the treatment liquid through the internal circulation pipes 19. More specifically, the control device 110 (control unit 111) opens the external circulation valves 29 and closes the internal circulation valve 33 when circulating the treatment liquid through the external circulation pipes 15. The control device 110 (control unit 111) closes the external circulation valves 29 and opens the internal circulation valve 33 when circulating the treatment liquid through the internal circulation pipes 19.

[0074] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a diagram showing the configuration of a fluid cabinet 101 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 3, the substrate processing apparatus 100 further includes a pump drive mechanism 5. The pump drive mechanism 5 is housed in the fluid cabinet 101.

[0075] The pump drive mechanism 5 supplies gas to the circulation pump 21 to drive the circulation pump 21. The pump drive mechanism 5 is controlled by the control device 110 (control unit 111). Specifically, the pump drive mechanism 5 has a first pipe 51, a second pipe 52, a third pipe 53, a fourth pipe 54, a pressure adjustment valve 55, and a switching valve 56. The first pipe 51 to the fourth pipe 54 are each a tubular member through which gas flows. The gas is supplied to the circulation pump 21 via the first pipe 51 to the fourth pipe 54.

[0076] The first pipe 51 allows the gas to flow up to the pressure regulating valve 55. In other words, the first pipe 51 supplies the gas to the pressure regulating valve 55. The type of gas is not particularly limited. The gas may be, for example, air or an inert gas such as nitrogen gas.

[0077] The pressure regulating valve 55 adjusts the pressure of the gas supplied to the circulation pump 21 to adjust the discharge pressure, which indicates the pressure at which the circulation pump 21 discharges the treatment liquid. Hereinafter, the pressure of the gas supplied to the circulation pump 21 may be referred to as the "gas supply pressure." The discharge pressure may also be referred to as the "pump discharge pressure." The magnitude (pressure value) of the pump discharge pressure depends on the magnitude (pressure value) of the gas supply pressure. Therefore, when the gas supply pressure changes, the pump discharge pressure also changes.

[0078] The pressure regulating valve 55 is controlled by the control device 110 (control unit 111). The pressure regulating valve 55 includes, for example, a proportional control valve. In this case, the control device 110 (control unit 111) sends a current signal or a voltage signal to the pressure regulating valve 55. The pressure regulating valve 55 increases or decreases the gas supply pressure in proportion to the current value of the current signal or the voltage value of the voltage signal. As a result, the pump discharge pressure increases or decreases in proportion to the current value of the current signal or the voltage value of the voltage signal.

[0079] In this embodiment, the pressure regulating valve 55 includes a proportional control valve, a pressure gauge, and a control circuit. The pressure gauge measures the gas supply pressure. Specifically, the pressure gauge measures the pressure of the gas delivered from the pressure regulating valve 55. The control circuit controls the proportional control valve based on a current signal or a voltage signal output from the control device 110 (control unit 111) to increase or decrease the gas supply pressure in proportion to the current value of the current signal or the voltage value of the voltage signal.

[0080] Furthermore, the control circuit feedback-controls the proportional control valve based on the measurement result of the pressure gauge. Specifically, the control circuit controls the proportional control valve so that the measurement result of the pressure gauge follows the current value of the current signal or the voltage value of the voltage signal. Note that the control circuit of the pressure adjustment valve 55 may transmit the measurement result of the pressure gauge to the control device 110 (control unit 111). In other words, the control device 110 (control unit 111) may acquire the gas supply pressure from the pressure adjustment valve 55.

[0081] The second pipe 52 allows the gas delivered from the pressure regulating valve 55 to flow to the switching valve 56. In other words, the second pipe 52 supplies the gas to the switching valve 56. The switching valve 56 is controlled by the control device 110 (control unit 111) and periodically switches the destination of the gas delivery between the third pipe 53 and the fourth pipe 54. The switching valve 56 may include, for example, a solenoid valve.

[0082] The third pipe 53 allows the gas to flow up to a first gas chamber 68, which will be described later with reference to Fig. 4. In other words, the third pipe 53 supplies the gas to the first gas chamber 68, which will be described later with reference to Fig. 4. The fourth pipe 54 allows the gas to flow up to a second gas chamber 70, which will be described later with reference to Fig. 4. In other words, the fourth pipe 54 supplies the gas to the second gas chamber 70, which will be described later with reference to Fig. 4.

[0083] Next, the filter unit 27 will be described with reference to Fig. 3. As shown in Fig. 3, the filter unit 27 has a filter membrane 27a. The filter membrane 27a captures foreign matter contained in the treatment liquid. In other words, the filter membrane 27a filters the treatment liquid.

[0084] Next, the control device 110 will be described with reference to FIG. 3 . As shown in FIG. 3 , the control device 110 further includes an input unit 113. The input unit 113 is a user interface device operated by an operator. The input unit 113 inputs instructions (control signals) corresponding to operations by the operator to the control unit 111. The input unit 113 also inputs data corresponding to operations by the operator to the control unit 111. The input unit 113 may include, for example, a keyboard and a mouse. The input unit 113 may also include a touch sensor. The touch sensor inputs a signal indicating a touch operation by the operator to the control unit 111. The touch sensor may be superimposed on a display surface of a display device. In this case, a graphical user interface may be configured by the touch sensor and the display device.

[0085] In this embodiment, the control device 110 (control unit 111) controls the pressure adjustment valve 55 to execute a pressure increase process when the circulation pump 21 starts to operate. Here, the pressure increase process includes a process of gradually increasing the pressure of the gas supplied to the circulation pump 21 (gas supply pressure) to gradually increase the pump discharge pressure to the target pressure TTP. In other words, the control device 110 (control unit 111) controls the pressure adjustment valve 55 when the circulation pump 21 starts to operate to continuously increase the gas supply pressure over time. As a result, the pump discharge pressure continuously increases over time.

[0086] For example, the control device 110 (control unit 111) gradually increases the current value of the current signal or the voltage value of the voltage signal sent to the pressure regulating valve 55. That is, the control device 110 (control unit 111) continuously increases the current value of the current signal or the voltage value of the voltage signal sent to the pressure regulating valve 55 over time. As a result, the pump discharge pressure gradually increases to the target pressure TTP. Note that the target pressure TTP indicates the pressure at which the circulating pump 21 discharges the processing liquid when processing the substrate W. Hereinafter, the target pressure TTP may be referred to as the "target discharge pressure TTP."

[0087] Specifically, the control device 110 (controller 111) executes a pressure increase process when the operation of the substrate processing apparatus 100 is resumed. By executing the pressure increase process, circulation of the processing liquid through the internal circulation pipe 19 and circulation of the processing liquid through each external circulation pipe 15 are resumed. Specifically, the control device 110 (controller 111) resumes circulation of the processing liquid through each external circulation pipe 15 after resuming circulation of the processing liquid through the internal circulation pipe 19.

[0088] For example, the substrate processing apparatus 100 stops operating when a process liquid replacement operation, a recovery operation from a problem, or the like is performed. When the operation of the substrate processing apparatus 100 stops, the circulation of the process liquid through the internal circulation pipe 19 and the circulation of the process liquid through each external circulation pipe 15 are stopped. The operation of the substrate processing apparatus 100 is resumed after the process liquid replacement operation, the recovery operation from a problem, or the like is completed. The control device 110 (controller 111) performs a pressurization process when the operation of the substrate processing apparatus 100 resumes, thereby restarting the circulation of the process liquid through the internal circulation pipe 19 and the circulation of the process liquid through each external circulation pipe 15. For example, the control device 110 (controller 111) may perform the pressurization process in response to detecting that the process liquid replacement operation, the recovery operation from a problem, or the like has been completed. Alternatively, the control device 110 (controller 111) may perform the pressurization process in response to an instruction to resume the operation of the substrate processing apparatus 100 by an operator operating the input unit 113.

[0089] Next, the circulation pump 21 included in the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 4. The circulation pump 21 includes, for example, a bellows pump. Fig. 4 is a diagram showing an example of the configuration of the circulation pump 21. Specifically, Fig. 4 shows an example of the configuration of the bellows pump.

[0090] As shown in FIG. 4 , the circulation pump 21 has a first pump chamber 64 and a second pump chamber 65. The first pump chamber 64 has a first gas chamber 68 and a first liquid chamber 69. The second pump chamber 65 has a second gas chamber 70 and a second liquid chamber 71. Gas flows into the first gas chamber 68 and the second gas chamber 70. Specifically, gas flows into the first gas chamber 68 via the third pipe 53 described with reference to FIG. 3 . Gas flows into the second gas chamber 70 via the fourth pipe 54 described with reference to FIG. 3 . As described with reference to FIG. 3 , the switching valve 56 periodically switches the gas destination between the third pipe 53 and the fourth pipe 54. Therefore, the gas alternately flows into the first gas chamber 68 and the second gas chamber 70.

[0091] The treatment liquid flows into the first liquid chamber 69 and the second liquid chamber 71. Specifically, the first gas chamber 68 and the second gas chamber 70 each have a variable volume. The first liquid chamber 69 and the second liquid chamber 71 each have a variable volume. When gas flows into the first gas chamber 68, the treatment liquid is sent from the first liquid chamber 69 to the inlet pipe 13, and the treatment liquid flows into the second liquid chamber 71. Specifically, when gas flows into the first gas chamber 68 and the volume of the first gas chamber 68 expands, the volume of the first liquid chamber 69 decreases, and the treatment liquid is sent from the first liquid chamber 69 to the inlet pipe 13. When the volume of the first gas chamber 68 expands, the volume of the second liquid chamber 71 expands, and the treatment liquid is sucked into the second liquid chamber 71. Similarly, when gas flows into the second gas chamber 70 , the processing liquid is sent from the second liquid chamber 71 to the inlet pipe 13 , and the processing liquid flows into the first liquid chamber 69 .

[0092] In detail, as shown in FIG. 4, in addition to the first pump chamber 64 and the second pump chamber 65, the circulation pump 21 further has a first cylinder head 61 a, a second cylinder head 61 b, a pump head 62, a first cylinder 63 a, a second cylinder 63 b, a first moving member 66 a, a second moving member 66 b, a first bellows 67 a, a second bellows 67 b, a first liquid introduction port 72, a second liquid introduction port 73, and a liquid discharge port 74.

[0093] The first pump chamber 64 is defined by the first cylinder head 61a, the pump head 62, and the first cylinder 63a. The first cylinder 63a is disposed between the first cylinder head 61a and the pump head 62. Similarly, the second pump chamber 65 is defined by the second cylinder head 61b, the pump head 62, and the second cylinder 63b. The second cylinder 63b is disposed between the second cylinder head 61b and the pump head 62.

[0094] The first moving member 66a and the first bellows 67a are disposed in the first pump chamber 64. The second moving member 66b and the second bellows 67b are disposed in the second pump chamber 65. The first moving member 66a and the second moving member 66b are generally disk-shaped. The first bellows 67a and the second bellows 67b are expandable and contractible. For example, the first bellows 67a and the second bellows 67b are made of resin.

[0095] One end of the first bellows 67a is connected to the first moving member 66a, and the other end of the first bellows 67a is fixed to the pump head 62. Similarly, one end of the second bellows 67b is connected to the second moving member 66b, and the other end of the second bellows 67b is fixed to the pump head 62.

[0096] The first bellows 67a separates the first pump chamber 64 into a first gas chamber 68 and a first liquid chamber 69. Specifically, the space outside the first bellows 67a within the first pump chamber 64 forms the first gas chamber 68. The space inside the first pump chamber 64 forms the first liquid chamber 69. Similarly, the second bellows 67b separates the second pump chamber 65 into a second gas chamber 70 and a second liquid chamber 71.

[0097] The pump head 62 is a housing that accommodates a first liquid introduction port 72, a second liquid introduction port 73, and a liquid outlet port 74. The first liquid introduction port 72 introduces the treatment liquid into the first liquid chamber 69. The second liquid introduction port 73 introduces the treatment liquid into the second liquid chamber 71. Specifically, the treatment liquid that flows into the inlet pipe 13 from the treatment liquid tank 11 is introduced into the first liquid chamber 69 and the second liquid chamber 71 via the first liquid introduction port 72 and the second liquid introduction port 73. The liquid outlet port 74 discharges the treatment liquid from the first liquid chamber 69 and the second liquid chamber 71. The treatment liquid discharged from the first liquid chamber 69 and the second liquid chamber 71 is sent to the inlet pipe 13 via the liquid outlet port 74.

[0098] When gas is supplied to the second gas chamber 70 and the pressure therein increases, the pressure moves the second moving member 66b in the second pump chamber 65 toward the pump head 62. As a result, the volume of the second gas chamber 70 increases while the volume of the second liquid chamber 71 decreases, and the treatment liquid in the second liquid chamber 71 is discharged from the liquid outlet port 74. In conjunction with this, the first moving member 66a in the first pump chamber 64 moves toward the first cylinder head 61a. As a result, the volume of the first gas chamber 68 decreases while the volume of the first liquid chamber 69 increases, and the treatment liquid is sucked into the first liquid chamber 69 from the first liquid introduction port 72.

[0099] Similarly, when gas is supplied to the first gas chamber 68 and the pressure therein increases, the pressure moves the first moving member 66a in the first pump chamber 64 toward the pump head 62. As a result, the volume of the first gas chamber 68 increases while the volume of the first liquid chamber 69 decreases, and the treatment liquid in the first liquid chamber 69 is discharged from the liquid outlet port 74. In conjunction with this, the second moving member 66b in the second pump chamber 65 moves toward the second cylinder head 61b. As a result, the volume of the second gas chamber 70 decreases while the volume of the second liquid chamber 71 increases, and the treatment liquid is sucked into the second liquid chamber 71 from the second liquid introduction port 73.

[0100] As described above with reference to FIG. 4 , the first moving member 66a is moved by the gas flowing into the first gas chamber 68, thereby changing the volume of the first gas chamber 68 and the volume of the first liquid chamber 69. Similarly, the second moving member 66b is moved by the gas flowing into the second gas chamber 70, thereby changing the volume of the second gas chamber 70 and the volume of the second liquid chamber 71. More specifically, by alternately supplying gas to the first gas chamber 68 and the second gas chamber 70, the first moving member 66a and the second moving member 66b reciprocate, causing the volumes of the first gas chamber 68 and the second gas chamber 70 to alternately expand and contract, and the volumes of the first liquid chamber 69 and the second liquid chamber 71 to alternately expand and contract. As a result, the treatment liquid alternately flows into the first liquid chamber 69 and the second liquid chamber 71, and is alternately discharged from the first liquid chamber 69 and the second liquid chamber 71. The treatment liquid delivered from the first liquid chamber 69 and the second liquid chamber 71 is delivered to the inlet pipe 13 via the liquid outlet port 74 .

[0101] The circulation pump 21 is not limited to a bellows pump. The circulation pump 21 may be any pump that is driven by a gas supply. For example, the circulation pump 21 may be a diaphragm pump.

[0102] Next, the substrate processing apparatus 100 and the substrate processing method of this embodiment will be described with reference to FIGS. 1 to 5. The substrate processing method of this embodiment is performed by the substrate processing apparatus 100 described with reference to FIGS. 1 to 4. FIG. 5 is a diagram showing the flow of the substrate processing method of this embodiment. In detail, FIG. 5 shows the flow of the process performed by the control device 110 (control unit 111). Specifically, FIG. 5 shows a process of restarting the circulation of the processing liquid (circulation restart process). The process shown in FIG. 5 (circulation restart process) starts when the operation of the substrate processing apparatus 100 is restarted.

[0103] 5 , when the operation of the substrate processing apparatus 100 is resumed, the control device 110 (controller 111) executes first valve control (step S1). In this embodiment, the first valve control includes controlling the circulation control mechanism 28 (the internal circulation valve 33 and the external circulation valves 29) to circulate the processing liquid through the internal circulation pipe 19 when the circulation pump 21 starts to operate. Specifically, before the operation of the substrate processing apparatus 100 is resumed, the internal circulation valve 33 and the external circulation valves 29 are in a closed state. When the operation of the substrate processing apparatus 100 is resumed, the control device 110 (controller 111) executes the first valve control to transition the internal circulation valve 33 from a closed state to an open state.

[0104] After executing the first valve control, the control device 110 (control unit 111) starts driving the circulation pump 21 to resume circulation of the treatment liquid (step S2). At this time, the multiple external circulation valves 29 remain closed, and the internal circulation valve 33 is open. Therefore, when the circulation pump 21 starts to drive, the treatment liquid flows through the internal circulation piping 19. The control device 110 (control unit 111) also executes the pressure increase process described with reference to FIG. 3 to start driving the circulation pump 21. Specifically, the control device 110 (control unit 111) controls the pressure adjustment valve 55 to gradually increase the pressure of the gas supplied to the circulation pump 21 (pump supply pressure), gradually increasing the pump discharge pressure to the target discharge pressure TTP.

[0105] After starting the pressurization process, the control device 110 (control unit 111) determines whether or not to switch the path through which the treatment liquid circulates from the internal circulation pipe 19 to the external circulation pipe 15 (step S3). Hereinafter, the path through which the treatment liquid circulates may be referred to as a "circulation path."

[0106] For example, the control device 110 (control unit 111) may determine whether to switch the circulation path from the internal circulation piping 19 to the external circulation piping 15 based on whether the pump discharge pressure is equal to or higher than the target discharge pressure TTP. In more detail, the control device 110 (control unit 111) may determine whether to switch the circulation path from the internal circulation piping 19 to the external circulation piping 15 based on whether the gas supply pressure is equal to or higher than a pressure TAP corresponding to the target discharge pressure TTP. Hereinafter, the pressure TAP may be referred to as a "target supply pressure TAP."

[0107] When determining whether to switch the circulation path based on the gas supply pressure, if the control device 110 (control unit 111) determines that the gas supply pressure is not equal to or greater than the target supply pressure TAP, the control device 110 (control unit 111) determines not to switch the circulation path from the internal circulation piping 19 to the external circulation piping 15 (No in step S3). In other words, if the control device 110 (control unit 111) determines that the gas supply pressure is less than the target supply pressure TAP, the control device 110 (control unit 111) determines not to switch the circulation path. On the other hand, if the control device 110 (control unit 111) determines that the gas supply pressure is equal to or greater than the target supply pressure TAP, the control device 110 (control unit 111) determines to switch the circulation path from the internal circulation piping 19 to the external circulation piping 15 (Yea in step S3).

[0108] When the control device 110 (control unit 111) determines not to switch the circulation path from the internal circulation piping 19 to the external circulation piping 15 (No in step S3), the control device 110 (control unit 111) repeats the process of step S3. For example, the control device 110 (control unit 111) repeats the process of step S3 until the gas supply pressure becomes equal to or higher than the target supply pressure TAP.

[0109] When the control device 110 (control unit 111) determines to switch the circulation path from the internal circulation pipe 19 to the external circulation pipe 15 (Yes in step S3), it executes second valve control (step S4). As a result, the process shown in FIG. 5 ends. Here, the second valve control includes controlling the circulation control mechanism 28 (the internal circulation valve 33 and the multiple external circulation valves 29) to switch the circulation path from the internal circulation pipe 19 to the external circulation pipe 15. Specifically, the control device 110 (control unit 111) transitions the internal circulation valve 33 from an open state to a closed state and transitions each external circulation valve 29 from a closed state to an open state. As a result, circulation of the treatment liquid through the internal circulation pipe 19 stops, and circulation of the treatment liquid through each external circulation pipe 15 starts.

[0110] Next, the substrate processing apparatus 100 and substrate processing method of this embodiment will be described with reference to FIGS. 1 to 5 and 6A to 6D. FIGS. 6A and 6B are timing charts showing the operation of the internal circulation valve 33 and each external circulation valve 29 when the operation of the substrate processing apparatus 100 is restarted. Specifically, FIGS. 6A and 6B are timing charts showing the operation of the internal circulation valve 33 and each external circulation valve 29 when the circulation of the processing liquid is restarted. FIGS. 6C and 6D are timing charts showing the pump discharge pressure and gas supply pressure when the operation of the substrate processing apparatus 100 is restarted. Specifically, FIGS. 6C and 6D are timing charts showing the pump discharge pressure and gas supply pressure when the circulation of the processing liquid is restarted. In FIGS. 6A to 6D, the horizontal axis indicates time t. In FIG. 6C, the vertical axis indicates the pump discharge pressure. In FIG. 6D, the vertical axis indicates the gas supply pressure.

[0111] 6A to 6D, the control device 110 (controller 111) transitions the internal circulation valve 33 from a closed state to an open state (time t1) when the operation of the substrate processing apparatus 100 is resumed. Thereafter, the control device 110 (controller 111) starts driving the circulation pump 21 (time t2).

[0112] Specifically, the control device 110 (control unit 111) controls the pressure adjustment valve 55 to start supplying gas to the circulation pump 21 (time t2), which causes the circulation pump 21 to start sending the treatment liquid (time t2), and the circulation of the treatment liquid through the internal circulation piping 19 begins.

[0113] Specifically, the control device 110 (control unit 111) starts the pressure increase process and gradually increases the gas supply pressure (from time t2 to time t3). As a result, the pump discharge pressure gradually increases (from time t2 to time t3). In other words, the pressure increase process causes the gas supply pressure to increase in a sloping manner. As a result, the pump discharge pressure also increases in a sloping manner.

[0114] The gas supply pressure (pressure SAP) at the start of supplying gas to the circulation pump 21 is determined in advance. In other words, the opening degree of the pressure adjustment valve 55 at the start of supplying gas to the circulation pump 21 is determined in advance.

[0115] The control device 110 (control unit 111) ends the pressure increase process when the pump discharge pressure reaches the target discharge pressure TTP (time t3). For example, the control device 110 (control unit 111) ends the pressure increase process when the gas supply pressure reaches the target supply pressure TAP.

[0116] After the pump discharge pressure reaches the target discharge pressure TTP, the pump discharge pressure is maintained at the target discharge pressure TTP (after time t3). After completing the pressure increase process, the control device 110 (control unit 111) transitions each external circulation valve 29 from a closed state to an open state (time t3). Thereafter, the control device 110 (control unit 111) transitions the internal circulation valve 33 from an open state to a closed state (time t4). As a result, the circulation path switches from a path via the internal circulation pipe 19 to a path via each external circulation pipe 15.

[0117] Next, another example of the substrate processing apparatus 100 and substrate processing method of this embodiment will be described with reference to Figures 7A to 7C. In the embodiment described with reference to Figures 1 to 5 and 6A to 6D, the substrate processing apparatus 100 includes the internal circulation piping 19 and the internal circulation valve 33, but the internal circulation piping 19 and the internal circulation valve 33 may be omitted. In this case, the circulation control mechanism 28 may include only the multiple external circulation valves 29 out of the multiple external circulation valves 29 and the internal circulation valve 33.

[0118] Fig. 7A is a timing chart showing another example of the operation of each external circulation valve 29 when the operation of the substrate processing apparatus 100 is restarted. More specifically, Fig. 7A is a timing chart showing another example of the operation of each external circulation valve 29 when the circulation of the processing liquid is restarted. Figs. 7B and 7C are timing charts showing another example of the pump discharge pressure and the gas supply pressure when the operation of the substrate processing apparatus 100 is restarted. The timing charts of the pump discharge pressure and the gas supply pressure shown in Figs. 7B and 7C are substantially the same as the timing charts shown in Figs. 6C and 6D. In Figs. 7A to 7C, the horizontal axis indicates time t.

[0119] 7A to 7C , in a configuration in which the internal circulation pipe 19 and the internal circulation valve 33 are omitted, the control device 110 (controller 111) transitions each external circulation valve 29 from a closed state to an open state when the operation of the substrate processing apparatus 100 is resumed (time t1). Thereafter, the control device 110 (controller 111) starts driving the circulation pump 21 (time t2). Then, when the pump discharge pressure reaches the target discharge pressure TTP (time t3), the control device 110 (controller 111) ends the pressure increase process.

[0120] The first embodiment of the present invention has been described above with reference to FIGS. 1 to 5, 6A to 6D, and 7A to 7C. According to the first embodiment, the pump discharge pressure gradually increases when the circulation of the processing liquid is resumed. Therefore, the pressure applied to the filter unit 27 (filter membrane 27a) gradually increases when the circulation of the processing liquid is resumed. This makes it possible to avoid a large pressure being suddenly applied to the filter unit 27 (filter membrane 27a) when the circulation of the processing liquid is resumed. As a result, when the circulation of the processing liquid is resumed, foreign matter captured in the filter unit 27 (filter membrane 27a) is less likely to be released from the filter unit 27. This makes it possible to prevent an increase in foreign matter adhering to the substrate W when the circulation of the processing liquid is resumed.

[0121] [Embodiment 2] Next, a second embodiment of the present invention will be described with reference to Figures 3, 5, and 8A to 8D. However, differences from embodiment 1 will be described, and a description of the same aspects as embodiment 1 will be omitted. Unlike embodiment 1, embodiment 2 switches the circulation path during execution of the pressure increase process.

[0122] First, a substrate processing apparatus 100 and a substrate processing method according to a second embodiment will be described with reference to Figures 3 and 5. In the second embodiment, the processing in step S3 shown in Figure 5 is different from that in the first embodiment.

[0123] In this embodiment, the control device 110 (control unit 111) controls the circulation control mechanism 28 while the pump discharge pressure is gradually increased by the pressurization process to stop the circulation of the treatment liquid through the internal circulation pipe 19 and start the circulation of the treatment liquid through each external circulation pipe 15. Specifically, the control device 110 (control unit 111) controls the external circulation valves 29 and the internal circulation valves 33 while the pump discharge pressure is gradually increased by the pressurization process to stop the flow of the treatment liquid through the internal circulation pipe 19 and start the flow of the treatment liquid through each external circulation pipe 15.

[0124] 5, the control device 110 (control unit 111) determines to switch the circulation path from the internal circulation pipe 19 to the external circulation pipe 15 while gradually increasing the pump discharge pressure (Yes in step S3). As a result, the control device 110 (control unit 111) executes the second valve control while the pressure increase process is in progress (step S4). Specifically, the control device 110 (control unit 111) transitions the internal circulation valve 33 from an open state to a closed state and transitions each external circulation valve 29 from a closed state to an open state while gradually increasing the pump discharge pressure through the pressure increase process.

[0125] For example, the control device 110 (control unit 111) may determine whether to switch the circulation path from the inner circulation pipe 19 to the outer circulation pipe 15 based on whether the pump discharge pressure is equal to or higher than the pressure MTP. Here, the pressure MTP indicates a pressure value lower than the target discharge pressure TTP. Hereinafter, the pressure MTP may be referred to as the "intermediate discharge pressure MTP."

[0126] Specifically, the control device 110 (control unit 111) may determine whether to switch the circulation path from the internal circulation pipe 19 to the external circulation pipe 15 based on whether the gas supply pressure is equal to or higher than a pressure MAP corresponding to the intermediate discharge pressure MTP. Hereinafter, the pressure MAP may be referred to as an "intermediate supply pressure MAP."

[0127] Next, the substrate processing apparatus 100 and substrate processing method of this embodiment will be described with reference to FIGS. 3, 5, and 8A to 8D. FIGS. 8A and 8B are timing charts showing the operation of the internal circulation valve 33 and each external circulation valve 29 when the operation of the substrate processing apparatus 100 is resumed. Specifically, FIGS. 8A and 8B are timing charts showing the operation of the internal circulation valve 33 and each external circulation valve 29 when the circulation of the processing liquid is resumed. FIGS. 8C and 8D are timing charts showing the pump discharge pressure and gas supply pressure when the operation of the substrate processing apparatus 100 is resumed. Specifically, FIGS. 8C and 8D are timing charts showing the pump discharge pressure and gas supply pressure when the circulation of the processing liquid is resumed. In FIGS. 8A to 8D, the horizontal axis represents time t. In FIG. 8C, the vertical axis represents the pump discharge pressure. In FIG. 8D, the vertical axis represents the gas supply pressure.

[0128] 8A to 8D, the control device 110 (controller 111) transitions the internal circulation valve 33 from a closed state to an open state (time t11) when the operation of the substrate processing apparatus 100 is resumed. Thereafter, the control device 110 (controller 111) starts driving the circulation pump 21 (time t12).

[0129] Specifically, the control device 110 (control unit 111) controls the pressure adjustment valve 55 to start supplying gas to the circulation pump 21 (time t12), which causes the circulation pump 21 to start sending the treatment liquid (time t12), and the circulation of the treatment liquid through the internal circulation piping 19 begins.

[0130] When the pump discharge pressure reaches the intermediate discharge pressure MTP (time t13), the control device 110 (control unit 111) transitions each external circulation valve 29 from a closed state to an open state (time t13). Thereafter, the control device 110 (control unit 111) transitions the internal circulation valve 33 from an open state to a closed state (time t14). As a result, while the pump discharge pressure is gradually increasing (during the pressure increase process), the circulation path switches from a path via the internal circulation pipe 19 to a path via each external circulation pipe 15. For example, when the gas supply pressure reaches the intermediate supply pressure MAP, the control device 110 (control unit 111) executes the second valve control to switch the circulation path.

[0131] When the pump discharge pressure reaches the target discharge pressure TTP (time t15), the control device 110 (control unit 111) ends the pressure increase process. After the pump discharge pressure reaches the target discharge pressure TTP, the pump discharge pressure is maintained at the target discharge pressure TTP (from time t15 onwards).

[0132] The second embodiment of the present invention has been described above with reference to FIGS. 3, 5, and 8A to 8D. According to the second embodiment, similar to the first embodiment, an increase in foreign matter adhering to the substrate W when the circulation of the processing liquid is resumed can be suppressed. Furthermore, according to the second embodiment, the processing liquid heated by the temperature regulator 25 flows through each external circulation pipe 15 before the end of the pressure increase process. Therefore, the temperature of each external circulation pipe 15 can be raised to the target temperature more quickly than in a configuration in which the processing liquid flows through each external circulation pipe 15 after the pressure increase process. Furthermore, compared to a configuration in which the processing liquid flows through each external circulation pipe 15 after the pressure increase process, the temperature increase of each external circulation pipe 15 by the processing liquid can begin more quickly. Therefore, the amount of thermal energy consumed can be suppressed. Consequently, the environmental load can be reduced.

[0133] [Embodiment 3] Next, embodiment 3 of the present invention will be described with reference to Figures 3, 9, and 10A to 10D. However, differences from embodiments 1 and 2 will be described, and descriptions of the same aspects as embodiments 1 and 2 will be omitted. Unlike embodiments 1 and 2, embodiment 3 has a variable period from the start of the pressure increase process to the end of the pressure increase process. In other words, the period during which the pump discharge pressure is gradually increased by the pressure increase process is variable. Hereinafter, the period from the start of the pressure increase process to the end of the pressure increase process may be referred to as the "pressure increase period."

[0134] 3 and 9, the substrate processing apparatus 100 and the substrate processing method of the present embodiment will be described. In the present embodiment, the storage unit 112 stores history information. The history information indicates information relating to the usage history of the filter unit 27.

[0135] For example, the memory unit 112 may store the number of substrates W processed by the substrate processing apparatus 100 from the start of use of the filter unit 27 to the present, as the usage history (history information) of the filter unit 27. Specifically, the control unit 111 may count the number of substrates W carried into the substrate processing apparatus 100 from the load port LP, and store the count value (counting result) in the memory unit 112. Hereinafter, the number of substrates W processed by the substrate processing apparatus 100 from the start of use of the filter unit 27 to the present may be referred to as the "number of processed substrates."

[0136] Alternatively, the memory unit 112 may store the flow rate of the processing liquid that has passed through the filter unit 27 from the start of use of the filter unit 27 to the present, as the usage history (history information) of the filter unit 27. Specifically, the substrate processing apparatus 100 may further include a flow meter provided in the inlet pipe 13. For example, the flow meter may measure an integrated flow rate. The control unit 111 stores the measurement result (integrated flow rate) of the flow meter in the memory unit 112. Hereinafter, the flow rate of the processing liquid that has passed through the filter unit 27 from the start of use of the filter unit 27 to the present may be referred to as the "total flow rate of the processing liquid."

[0137] The control unit 111 adjusts the pressure increase period based on the history information stored in the memory unit 112. Specifically, the control unit 111 adjusts the pressure increase period based on the history information when the operation of the substrate processing apparatus 100 is restarted (when the circulation of the processing liquid is restarted). For example, the control unit 111 lengthens the pressure increase period as the number of processed substrates increases. Alternatively, the control unit 111 lengthens the pressure increase period as the total flow rate of the processing liquid increases.

[0138] Specifically, the greater the number of substrates processed, the greater the number of foreign particles trapped in the filter unit 27 (filter membrane 27a). Similarly, the greater the total flow rate of the processing liquid, the greater the number of foreign particles trapped in the filter unit 27 (filter membrane 27a). Meanwhile, the shorter the pressure increase period, the greater the pressure suddenly applied to the filter unit 27 (filter membrane 27a). Therefore, if the pressure increase period is shortened when a large number of foreign particles are trapped in the filter unit 27 (filter membrane 27a), the greater the number of foreign particles released from the filter unit 27 (filter membrane 27a). On the other hand, even when a large number of foreign particles are trapped in the filter unit 27 (filter membrane 27a), extending the pressure increase period makes it more difficult for foreign particles to be released from the filter unit 27.

[0139] Specifically, the control unit 111 adjusts the pressure (pressure SAP) of the gas supplied to the circulation pump 21 at the start of the pressurization process based on the history information. In other words, the control unit 111 adjusts the gas supply pressure (pressure SAP) when the supply of gas to the circulation pump 21 is resumed. Hereinafter, the pressure (pressure SAP) of the gas supplied to the circulation pump 21 at the start of the pressurization process may be referred to as the "initial supply pressure SAP." The smaller the initial supply pressure SAP, the longer the pressurization period.

[0140] Fig. 9 is a diagram showing the flow of the substrate processing method of this embodiment. In detail, Fig. 9 shows the flow of the process executed by the control device 110 (control unit 111). Specifically, Fig. 9 shows the process of restarting the circulation of the processing liquid (circulation restart process). The process shown in Fig. 9 (circulation restart process) starts when the operation of the substrate processing apparatus 100 is restarted. The process shown in Fig. 9 includes steps S11 to S16.

[0141] 9 , when the operation of the substrate processing apparatus 100 is resumed, the control unit 111 refers to the history information stored in the memory unit 112 (step S11). Then, the control unit 111 adjusts the pressure increase period based on the history information (step S12). Specifically, the control unit 111 adjusts the initial supply pressure SAP based on the history information. For example, the control unit 111 reduces the pressure value of the initial supply pressure SAP as the number of processed substrates increases. Similarly, the control unit 111 reduces the pressure value of the initial supply pressure SAP as the total flow rate of the processing liquid increases.

[0142] After the control unit 111 adjusts the boost period, the processes of steps S13 to S16 are executed, and the process shown in Fig. 9 is completed. Note that the processes of steps S13 to S16 are substantially the same as the processes of steps S1 to S4 described with reference to Fig. 5, and therefore, a description thereof will be omitted.

[0143] Next, the substrate processing apparatus 100 and substrate processing method of this embodiment will be described with reference to FIGS. 3, 9, and 10A to 10D. FIGS. 10A and 10B are timing charts showing the operation of the internal circulation valve 33 and each external circulation valve 29 when the operation of the substrate processing apparatus 100 is resumed. Specifically, FIGS. 10A and 10B are timing charts showing the operation of the internal circulation valve 33 and each external circulation valve 29 when the circulation of the processing liquid is resumed. FIGS. 10C and 10D are timing charts showing the pump discharge pressure and gas supply pressure when the operation of the substrate processing apparatus 100 is resumed. Specifically, FIGS. 10C and 10D are timing charts showing the pump discharge pressure and gas supply pressure when the circulation of the processing liquid is resumed. In FIGS. 10A to 10D, the horizontal axis represents time t. In FIG. 10C, the vertical axis represents the pump discharge pressure. In FIG. 10D, the vertical axis represents the gas supply pressure.

[0144] 10D, a first initial supply pressure SAP1 indicates the initial supply pressure SAP at the first restart of the operation of the substrate processing apparatus 100. A second initial supply pressure SAP2 indicates the initial supply pressure SAP at the second restart of the operation of the substrate processing apparatus 100.

[0145] 10A to 10D , when the operation of the substrate processing apparatus 100 is resumed, the control device 110 (controller 111) transitions the internal circulation valve 33 from a closed state to an open state (time t21). Thereafter, the control device 110 (controller 111) starts driving the circulation pump 21 (time t22). As a result, the circulation pump 21 starts sending the processing liquid (time t22), and the processing liquid starts circulating through the internal circulation piping 19.

[0146] Specifically, when the substrate processing apparatus 100 resumes operation for the first time, the control device 110 (control unit 111) adjusts the initial supply pressure SAP to the first initial supply pressure SAP1 based on historical information and starts supplying gas to the circulation pump 21 (time t22).

[0147] When the pump discharge pressure reaches the target discharge pressure TTP (time t23), the control device 110 (control unit 111) ends the pressure increase process. After ending the pressure increase process, the control device 110 (control unit 111) transitions each external circulation valve 29 from a closed state to an open state (time t23). Thereafter, the control device 110 (control unit 111) transitions the internal circulation valve 33 from an open state to a closed state (time t24). As a result, the circulation path switches from a path via the internal circulation pipe 19 to a path via each external circulation pipe 15.

[0148] On the other hand, when the substrate processing apparatus 100 restarts its second operation, the control device 110 (control unit 111) adjusts the initial supply pressure SAP to the second initial supply pressure SAP2 based on the history information, and starts supplying gas to the circulation pump 21 (time t22). The second initial supply pressure SAP2 indicates a pressure value lower than the first initial supply pressure SAP1.

[0149] As a result of adjusting the initial supply pressure SAP to the second initial supply pressure SAP2, the time at which the pump discharge pressure reaches the target discharge pressure TTP is delayed from time t23 to time t25. Therefore, the pressure increase period (time t21 to time t25) when the substrate processing apparatus 100 resumes its second operation is longer than the pressure increase period (time t21 to time t23) when the substrate processing apparatus 100 resumes its first operation.

[0150] When the pump discharge pressure reaches the target discharge pressure TTP (time t25), the control device 110 (control unit 111) ends the pressure increase process. After ending the pressure increase process, the control device 110 (control unit 111) transitions each external circulation valve 29 from a closed state to an open state (time t25). Thereafter, the control device 110 (control unit 111) transitions the internal circulation valve 33 from an open state to a closed state (time t26).

[0151] Embodiment 3 of the present invention has been described above with reference to Figures 3, 9, and 10A to 10D. According to embodiment 3, as with embodiments 1 and 2, it is possible to prevent an increase in foreign matter adhering to the substrate W when circulation of the processing liquid is resumed. Furthermore, according to embodiment 3, it is possible to adjust the pressure increase period in accordance with the usage history of the filter portion 27 (filter film 27a). Therefore, it is possible to further prevent an increase in foreign matter adhering to the substrate W when circulation of the processing liquid is resumed.

[0152] [Embodiment 4] Next, embodiment 4 of the present invention will be described with reference to Figures 11, 12, 13A to 13D, 14A to 14D, and 15. However, differences from embodiments 1 to 3 will be described, and a description of the same aspects as embodiments 1 to 3 will be omitted. Unlike embodiments 1 to 3, embodiment 4 performs a drainage process before performing a pressure increase process.

[0153] 11 is a diagram showing the configuration of a fluid cabinet 101 included in the substrate processing apparatus 100 of this embodiment. As shown in FIG. 11 , the substrate processing apparatus 100 further includes a drainage mechanism 9 and a circulation regulation valve 81. The drainage mechanism 9 is housed in the fluid cabinet 101. The drainage mechanism 9 discharges the processing liquid from the inlet pipe 13. Specifically, the drainage mechanism 9 includes a drainage pipe 91, a drainage tank 92, and a drainage valve 93.

[0154] The drain pipe 91 is a tubular member through which the treatment liquid flows. The drain pipe 91 discharges the treatment liquid. In this embodiment, the drain pipe 91 discharges the treatment liquid from the inlet pipe 13. Specifically, the drain pipe 91 distributes the treatment liquid from the inlet pipe 13 to the drain tank 92. In other words, the drain pipe 91 discharges the treatment liquid to the drain tank 92.

[0155] More specifically, the drainage pipe 91 discharges the treated liquid that has passed through the filter membrane 27a. In this embodiment, the upstream end of the drainage pipe 91 is connected to the filter unit 27, and the downstream end of the drainage pipe 91 is connected to the drainage tank 92. Specifically, the upstream end of the drainage pipe 91 is connected to the secondary side of the filter unit 27. Here, the secondary side of the filter unit 27 refers to the portion downstream of the filter membrane 27a. Note that the primary side of the filter unit 27 refers to the portion upstream of the filter membrane 27a.

[0156] The drain valve 93 is disposed in the drain pipe 91 and controls the start and stop of the flow of the processing liquid through the drain pipe 91. Specifically, the drain valve 93 is an open / close valve that can be opened and closed. When the drain valve 93 is opened, the processing liquid flows through the drain pipe 91 and is discharged into the drain tank 92. When the drain valve 93 is closed, the flow of the processing liquid through the drain pipe 91 stops. As a result, the discharge of the processing liquid from the inlet pipe 13 stops. The opening and closing operation of the drain valve 93 is controlled by the control device 110 (control unit 111).

[0157] In the present embodiment, the circulation control mechanism 28 further includes a circulation restriction valve 81 in addition to the plurality of external circulation valves 29 and the internal circulation valve 33. The circulation restriction valve 81 is provided in the inlet pipe 13. Specifically, the circulation restriction valve 81 is disposed between the filter unit 27 and the second connection point P2. Note that in the present embodiment, the circulation control mechanism 28 includes the plurality of external circulation valves 29, the internal circulation valve 33, and the circulation restriction valve 81; however, as in the first to third embodiments, the circulation control mechanism 28 may include only the plurality of external circulation valves 29 and the internal circulation valve 33 out of the plurality of external circulation valves 29, the internal circulation valve 33, and the circulation restriction valve 81.

[0158] The circulation restriction valve 81 restricts the inflow of the processing liquid into the plurality of external circulation pipes 15 and the inflow of the processing liquid into the internal circulation pipe 19. More specifically, the circulation restriction valve 81 is an open / close valve that can be opened and closed. When the circulation restriction valve 81 is closed, the inflow of the processing liquid into the plurality of external circulation pipes 15 and the inflow of the processing liquid into the internal circulation pipe 19 is restricted. When the circulation restriction valve 81 is opened, the restriction on the inflow of the processing liquid into the plurality of external circulation pipes 15 and the internal circulation pipe 19 is released. The opening and closing operation of the circulation restriction valve 81 is controlled by the control device 110 (control unit 111).

[0159] The control device 110 (control unit 111) controls the circulation control mechanism 28 (the multiple external circulation valves 29, the internal circulation valve 33, and the circulation restriction valve 81), the pump discharge pressure, and the drain valve 93 to perform the drainage process, the circulation start process, and the pressure increase process. In this embodiment, the control device 110 (control unit 111) controls the pressure adjustment valve 55 to control the pump discharge pressure.

[0160] Specifically, the drainage process includes controlling the pressure regulating valve 55 to increase the pump discharge pressure to a first target discharge pressure TTP1 (first pressure) when the circulation pump 21 starts to operate, and controlling at least the drainage valve 93 among the circulation control mechanism 28 (the multiple external circulation valves 29, the internal circulation valve 33, and the circulation restriction valve 81) and the drainage valve 93 to discharge the treatment liquid from the drainage pipe 91. For example, if the circulation restriction valve 81 is open when the circulation pump 21 starts to operate, the control device 110 (control unit 111) transitions the circulation restriction valve 81 from an open state to a closed state and transitions the drainage valve 93 from a closed state to an open state when the circulation pump 21 starts to operate. As a result, the treatment liquid is discharged to the drainage tank 92 via the drainage pipe 91. Note that during the drainage process, the pump discharge pressure increases rapidly to the first target discharge pressure TTP1 (first pressure).

[0161] The first target discharge pressure TTP1 may be a pressure greater than the pressure at which the circulation pump 21 discharges the processing liquid when processing the substrate W. Alternatively, the first target discharge pressure TTP1 may be a pressure equal to the pressure at which the circulation pump 21 discharges the processing liquid when processing the substrate W. Hereinafter, the pressure at which the circulation pump 21 discharges the processing liquid when processing the substrate W may be referred to as the "normal use pressure."

[0162] In response to discharging the treatment liquid from the drainage pipe 91, the control device 110 (control unit 111) reduces the pump discharge pressure to a pressure STP (second pressure) that is lower than the first target discharge pressure TTP1 (first pressure). In other words, after performing the discharge process, the control device 110 (control unit 111) controls the pressure adjustment valve 55 to reduce the pump discharge pressure to the pressure STP (second pressure). Note that the pressure STP (second pressure) indicates the pump discharge pressure when circulation of the treatment liquid is resumed. Hereinafter, the pressure STP (second pressure) may be referred to as the "circulation start pressure STP."

[0163] The control device 110 (control unit 111) executes a circulation start process and a pressure increase process in response to the reduction of the pump discharge pressure from the first target discharge pressure TTP1 (first pressure) to the circulation start pressure STP (second pressure). In this embodiment, the circulation start process includes a process of controlling the circulation control mechanism 28 (the plurality of external circulation valves 29, the internal circulation valve 33, and the circulation regulating valve 81) and the drain valve 93 to stop the discharge of the treatment liquid from the drain pipe 91 and start the circulation of the treatment liquid via the internal circulation pipe 19.

[0164] Specifically, the control device 110 (controller 111) transitions the circulation restriction valve 81 from a closed state to an open state. Thereafter, the control device 110 (controller 111) transitions the internal circulation valve 33 from a closed state to an open state. As a result, discharge of the processing liquid through the drainage pipe 91 stops, and circulation of the processing liquid through the internal circulation pipe 19 starts.

[0165] The pressure increase process refers to a process of gradually increasing the pump discharge pressure to a second target discharge pressure TTP2 (third pressure) that is higher than the circulation start pressure STP (second pressure), as in the first to third embodiments. Here, the second target discharge pressure TTP2 refers to the pressure (normal operating pressure) at which the circulation pump 21 discharges the processing liquid when processing the substrate W.

[0166] If the first target discharge pressure TTP1 is a pressure greater than the normal operating pressure, the first target discharge pressure TTP1 indicates a pressure value equal to or less than the withstand pressure value of the member or device with the lowest withstand pressure value among the members or devices provided in the inlet pipe 13, each external circulation pipe 15, and the internal circulation pipe 19. For example, if the member or device with the lowest withstand pressure value is the temperature regulator 25, the first target discharge pressure TTP1 indicates a pressure value greater than the normal operating pressure and equal to or less than the withstand pressure value of the temperature regulator 25.

[0167] Fig. 12 is a diagram showing the flow of the substrate processing method of this embodiment. In detail, Fig. 12 shows the flow of the process executed by the control device 110 (control unit 111). Specifically, Fig. 12 shows the process of restarting the circulation of the processing liquid (circulation restart process). The process shown in Fig. 12 (circulation restart process) starts when the operation of the substrate processing apparatus 100 is restarted.

[0168] 12 , when the operation of the substrate processing apparatus 100 is resumed, the control device 110 (controller 111) transitions the drain valve 93 from a closed state to an open state (step S21). Thereafter, the control device 110 (controller 111) controls the circulation control mechanism 28 to regulate the circulation of the processing liquid through the plurality of external circulation pipes 15 and the circulation of the processing liquid through the internal circulation pipe 19. In this embodiment, the control device 110 (controller 111) transitions the circulation regulation valve 81 from an open state to a closed state to regulate the inflow of the processing liquid into the internal circulation pipe 19 and the inflow of the processing liquid into each external circulation pipe 15 (step S22).

[0169] The control device 110 (control unit 111) transitions the circulation restriction valve 81 from the open state to the closed state, and then starts driving the circulation pump 21 (step S23). Specifically, the control device 110 (control unit 111) controls the pressure adjustment valve 55 to start supplying gas to the circulation pump 21, and increases the pump discharge pressure to the first target discharge pressure TTP1 in one go.

[0170] After starting the operation of the circulation pump 21, the control device 110 (control unit 111) determines whether a predetermined time (first predetermined time) has elapsed since the start of the operation of the circulation pump 21 (step S24). Here, the predetermined time indicates a predetermined fixed period (time). The first predetermined time is, for example, 30 seconds or 60 seconds.

[0171] If the control device 110 (control unit 111) determines that the predetermined time (first predetermined time) has not elapsed since the start of operation of the circulation pump 21 (No in step S24), the control device 110 (control unit 111) repeats the process of step S24. In other words, the control device 110 (control unit 111) maintains the pump discharge pressure at the first target discharge pressure TTP1 until the predetermined time (first predetermined time) has elapsed since the start of operation of the circulation pump 21.

[0172] If the control device 110 (control unit 111) determines that a predetermined time (first predetermined time) has elapsed since the circulation pump 21 started to operate (Yes in step S24), it controls the pressure regulating valve 55 to reduce the pump discharge pressure from the first target discharge pressure TTP1 to the circulation start pressure STP (step S25).

[0173] The control device 110 (control unit 111) reduces the pump discharge pressure to the circulation start pressure STP, and then executes first valve control (step S26). In this embodiment, the first valve control includes controlling the circulation control mechanism 28 (the plurality of external circulation valves 29, the internal circulation valve 33, and the circulation regulating valve 81) and the drain valve 93 to start circulating the treatment liquid through the internal circulation pipe 19. Specifically, the control device 110 (control unit 111) transitions the circulation regulating valve 81 and the internal circulation valve 33 from a closed state to an open state, and transitions the drain valve 93 from an open state to a closed state.

[0174] After executing the first valve control, the control device 110 (control unit 111) executes a pressure increase process. Specifically, the control device 110 (control unit 111) controls the pressure adjustment valve 55 to gradually increase the pump discharge pressure from the circulation start pressure STP to the second target discharge pressure TTP2 (step S27).

[0175] After starting the pressure increase process, the control device 110 (control unit 111) determines whether or not to switch the circulation path from the internal circulation pipe 19 to the external circulation pipe 15 (step S28). Note that the process of step S28 is substantially the same as the process of step S3 shown in Fig. 5, and therefore a detailed description thereof will be omitted.

[0176] When the control device 110 (control unit 111) determines to switch the circulation path from the internal circulation pipe 19 to the external circulation pipe 15 (Yes in step S28), it executes the second valve control (step S29). As a result, the process shown in Fig. 12 ends. Note that the process of step S29 is substantially the same as the process of step S4 shown in Fig. 5, and therefore a detailed description thereof will be omitted.

[0177] 13A to 13C are timing charts showing the operation of the drain valve 93, the internal circulation valve 33, and the external circulation valves 29 when the operation of the substrate processing apparatus 100 is restarted. More specifically, FIGS. 13A to 13C are timing charts showing the operation of the drain valve 93, the internal circulation valve 33, and the external circulation valves 29 when the circulation of the processing liquid is restarted. FIG. 13D is a timing chart showing the pump discharge pressure when the operation of the substrate processing apparatus 100 is restarted. More specifically, FIG. 13D is a timing chart showing the pump discharge pressure when the circulation of the processing liquid is restarted. In FIGS. 13A to 13D, the horizontal axis represents time t. In addition, in FIG. 13D, the vertical axis represents the pump discharge pressure.

[0178] 13A to 13D, the control device 110 (controller 111) executes a drainage process when the substrate processing apparatus 100 resumes operation. Specifically, the control device 110 (controller 111) transitions the circulation restriction valve 81 from an open state to a closed state and transitions the drainage valve 93 from a closed state to an open state (time t31). The control device 110 (controller 111) then starts driving the circulation pump 21 (time t32). As a result, the processing liquid is discharged from the inlet pipe 13 to the drainage tank 92 via the drainage pipe 91. During the drainage process, the control device 110 (controller 111) controls the pressure regulating valve 55 to instantly increase the pump discharge pressure to the first target discharge pressure TTP1.

[0179] When a predetermined time (first predetermined time) has elapsed since the start of the drainage process, the control device 110 (control unit 111) controls the pressure regulating valve 55 to reduce the pump discharge pressure from the first target discharge pressure TTP1 to the circulation start pressure STP (time t33).

[0180] After reducing the pump discharge pressure to the circulation start pressure STP, the control device 110 (controller 111) transitions the circulation restriction valve 81 from a closed state to an open state and transitions the internal circulation valve 33 from a closed state to an open state (time t34). Thereafter, the control device 110 (controller 111) transitions the drain valve 93 from an open state to a closed state (time t35). As a result, discharge of the treatment liquid through the drain pipe 91 stops, and circulation of the treatment liquid through the internal circulation pipe 19 starts.

[0181] The control device 110 (control unit 111) transitions the drain valve 93 from an open state to a closed state, and then starts the pressure increase process (time t36). As a result, the pump discharge pressure gradually increases (time t36 to time t37). In other words, the pressure increase process causes the pump discharge pressure to increase in a slope-like manner.

[0182] When the pump discharge pressure reaches the second target discharge pressure TTP2 (time t37), the control device 110 (control unit 111) ends the pressure increase process. After the pump discharge pressure reaches the second target discharge pressure TTP2, the pump discharge pressure is maintained at the second target discharge pressure TTP2 (from time t37 onwards). When the control device 110 (control unit 111) ends the pressure increase process, it transitions each external circulation valve 29 from a closed state to an open state (time t37). Thereafter, the control device 110 (control unit 111) transitions the internal circulation valve 33 from an open state to a closed state (time t38). As a result, the circulation path switches from a path via the internal circulation pipe 19 to a path via each external circulation pipe 15.

[0183] The circulation start pressure STP includes the pressure when the circulation pump 21 is not operating. That is, after the discharge process is performed, the control device 110 (control unit 111) may control the pressure adjustment valve 55 to stop the supply of gas to the circulation pump 21. In this case, the value of the circulation start pressure STP may be "0".

[0184] According to the embodiment described with reference to FIGS. 11 , 12 , and 13A to 13D , when the circulation pump 21 starts to operate, a pressure (first target discharge pressure TTP1) equal to or greater than the normal operating pressure (the pressure at which the circulation pump 21 discharges the processing liquid when processing a substrate W) can be applied to the filter membrane 27a, and the processing liquid that has passed through the filter membrane 27a can be discharged from the drainage pipe 91. Therefore, before the circulation of the processing liquid is resumed, foreign matter can be released from the filter membrane 27a and the released foreign matter can be discharged together with the processing liquid. Therefore, the number of foreign matter trapped on the filter membrane 27a can be reduced before the circulation of the processing liquid is resumed. Therefore, an increase in foreign matter adhering to the substrate W when the circulation of the processing liquid is resumed can be suppressed. Furthermore, according to the embodiment described with reference to FIGS. 11 , 12 , and 13A to 13D , after the drainage process is performed, the pump discharge pressure can be gradually increased to the second target discharge pressure TTP2, as in the first to third embodiments. Therefore, an increase in foreign matter adhering to the substrate W when the circulation of the processing liquid is resumed can be further suppressed.

[0185] 11, 12, and 13A to 13D, the first target discharge pressure TTP1 can be set to a pressure higher than the normal operating pressure, thereby allowing a larger amount of foreign matter to be released from the filter membrane 27a.

[0186] As explained with reference to Figures 11, 12, and 13A to 13D, if the number of foreign matter trapped in the filter membrane 27a is reduced before resuming circulation of the processing liquid, even if the pump discharge pressure is gradually increased to the second target discharge pressure TTP2 during the pressure increase process, it is possible to prevent an increase in the amount of foreign matter adhering to the substrate W when circulation of the processing liquid is resumed.

[0187] Next, another example (another example 1) of the substrate processing apparatus 100 and the substrate processing method of this embodiment will be described with reference to Figures 14A to 14D. In the embodiment described with reference to Figures 11, 12, and 13A to 13D, the pressure-increasing process is a process of gradually increasing (in a sloped manner) the pump discharge pressure to the second target discharge pressure TTP2, but the pressure-increasing process may also be a process of increasing the pump discharge pressure in stages to the second target discharge pressure TTP2.

[0188] 14A to 14C are timing charts showing another example (Alternative Example 1) of the operation of the drain valve 93, the internal circulation valve 33, and the external circulation valves 29 when the operation of the substrate processing apparatus 100 is resumed. Specifically, FIGS. 14A to 14C are timing charts showing another example (Alternative Example 1) of the operation of the drain valve 93, the internal circulation valve 33, and the external circulation valves 29 when the circulation of the processing liquid is resumed. FIG. 14D is a timing chart showing another example (Alternative Example 1) of the pump discharge pressure when the operation of the substrate processing apparatus 100 is resumed. Specifically, FIG. 14D is a timing chart showing another example (Alternative Example 1) of the pump discharge pressure when the circulation of the processing liquid is resumed. In FIGS. 14A to 14D, the horizontal axis represents time t. In FIG. 14D, the vertical axis represents the pump discharge pressure.

[0189] In Figures 14A to 14D, the operation of the drain valve 93, the internal circulation valve 33, and each external circulation valve 29, as well as the operation of the circulation pump 21 (pump discharge pressure) at each time from time t41 to time t45, is substantially the same as the operation of the drain valve 93, the internal circulation valve 33, and each external circulation valve 29, as well as the operation of the circulation pump 21 (pump discharge pressure) at each time from time t31 to time t35 shown in Figures 13A to 13D, and therefore their explanation will be omitted.

[0190] In Alternative Example 1 shown in FIGS. 14A to 14D, when the control device 110 (control unit 111) starts the pressure increase process (time t46), it increases the pump discharge pressure in stages (time t46 to time t48).

[0191] Specifically, when the control device 110 (control unit 111) starts the pressure increase process, it controls the pressure regulating valve 55 to increase the pump discharge pressure from the circulation start pressure STP to the pressure XTP in one go (time t46). Here, the pressure XTP indicates a pressure value that is greater than the circulation start pressure STP and less than the second target discharge pressure TTP2.

[0192] When a predetermined time (second predetermined time) has elapsed since the control device 110 (control unit 111) increased the pump discharge pressure to pressure XTP, the control device 110 (control unit 111) controls the pressure regulating valve 55 to increase the pump discharge pressure from pressure XTP to the second target discharge pressure TTP2 in one go (time t47).

[0193] When a predetermined time (third predetermined time) has elapsed since the pump discharge pressure was increased to the second target discharge pressure TTP2, the control device 110 (control unit 111) transitions each external circulation valve 29 from the closed state to the open state (time t48). Thereafter, the control device 110 (control unit 111) transitions the internal circulation valve 33 from the open state to the closed state (time t49). As a result, the circulation path is switched from the path via the internal circulation pipe 19 to the path via each external circulation pipe 15.

[0194] In the embodiment described with reference to Figures 14A to 14D, the pump discharge pressure is increased to the second target discharge pressure TTP2 in two stages during the pressure increase process, but the pump discharge pressure may also be increased to the second target discharge pressure TTP2 in three or more stages during the pressure increase process.

[0195] 14A to 14D, similar to the embodiments described with reference to FIGS. 11, 12, and 13A to 13D, foreign matter can be released from the filter membrane 27a before the circulation of the processing liquid is resumed, and the released foreign matter can be discharged together with the processing liquid. Therefore, the number of foreign matter trapped on the filter membrane 27a can be reduced before the circulation of the processing liquid is resumed. Therefore, an increase in the amount of foreign matter adhering to the substrate W when the circulation of the processing liquid is resumed can be suppressed.

[0196] Next, a second alternative example of the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 15. Fig. 15 is a diagram showing another example (second alternative example) of the configuration of the fluid cabinet 101 included in the substrate processing apparatus 100 of this embodiment. In the configuration described with reference to Fig. 11, the upstream end of the drainage pipe 91 is connected to the filter unit 27, but the upstream end of the drainage pipe 91 may be connected to the inlet pipe 13 as long as it is located at a position where the processing liquid that has passed through the filter membrane 27a can be discharged. In other words, the upstream end of the drainage pipe 91 may be connected to the inlet pipe 13 downstream of the filter unit 27.

[0197] For example, the drainage pipe 91 may be connected to the inlet pipe 13 upstream of the first connection point P1, or may be connected to the inlet pipe 13 upstream of the second connection point P2. Alternatively, as shown in Fig. 15 , the drainage pipe 91 may be connected to the inlet pipe 13 upstream of the circulation restriction valve 81. Specifically, the drainage pipe 91 may be connected to the inlet pipe 13 between the filter unit 27 and the circulation restriction valve 81.

[0198] In the embodiment described with reference to Figures 11 to 15, after the pressure increase process is completed, the circulation path is switched from the path via the inner circulation pipe 19 to the path via each outer circulation pipe 15, but as described with reference to Figures 8A to 8D, the circulation path may be switched during the pressure increase process.

[0199] In addition, in the embodiment described with reference to FIGS. 11 to 15, the boosting period is constant, but as described with reference to FIGS. 9 and 10A to 10D, the boosting period may be variable.

[0200] 11 to 15, the circulation pump 21 is a pump driven by gas pressure, but the circulation pump 21 is not limited to a pump driven by gas pressure. For example, the circulation pump 21 may be a pump driven by electric current. Alternatively, the circulation pump 21 may be a pump including a rotating body. Specifically, the circulation pump 21 may be a revitrifying pump.

[0201] 11 to 15, the substrate processing apparatus 100 includes the internal circulation pipe 19 and the internal circulation valve 33, but the internal circulation pipe 19 and the internal circulation valve 33 may be omitted. When the internal circulation pipe 19 and the internal circulation valve 33 are omitted, the circulation of the processing liquid starts via the external circulation pipe 15 by the circulation start process.

[0202] The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 15). However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from the spirit of the present invention. Furthermore, the components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

[0203] The drawings mainly show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0204] For example, in the embodiment described with reference to Figures 1 to 15, the substrate processing apparatus 100 is equipped with a pulse damper 23, but if a pump that does not generate pulsation in the processing liquid is used as the circulation pump 21, the pulse damper 23 may be omitted.

[0205] Furthermore, in the embodiment described with reference to Figures 1 to 15, the substrate processing apparatus 100 is equipped with a temperature regulator 25, but if the substrate processing is a substrate processing that does not use a heated processing liquid, the temperature regulator 25 may be omitted.

[0206] Furthermore, in the embodiment described with reference to FIGS. 1 to 15, the substrate processing apparatus 100 is a single-wafer type apparatus, but the substrate processing apparatus 100 may also be a batch type apparatus.

[0207] The present invention is useful in an apparatus for processing a substrate and a method for processing a substrate.

[0208] 11: Processing liquid tank (processing liquid storage section) 13: Inlet pipe 15: External circulation pipe 19: Internal circulation pipe 21: Circulation pump 27: Filter section 27a: Filter membrane 28: Circulation control mechanism 55: Pressure regulating valve 91: Drain pipe 93: Drain valve 100: Substrate processing apparatus 110: Control device 111: Control section 112: Memory section P1: First connection point P2: Second connection point SAP: Initial supply pressure SAP1: First initial supply pressure SAP2: Second initial supply pressure STP: Circulation start pressure TAP: Target supply pressure TTP: Target discharge pressure TTP1: First target discharge pressure TTP2: Second target discharge pressure W: Substrate

Claims

1. A substrate processing apparatus for processing substrates using a processing liquid, comprising: a processing liquid storage section for storing the processing liquid; an inflow pipe into which the processing liquid flows from the processing liquid storage section; at least one circulation pipe having an upstream end connected to the inflow pipe and a downstream end connected to the processing liquid storage section for circulating the processing liquid; a pump disposed on the inflow pipe and driven by gas pressure to circulate the processing liquid; a filter section disposed on the inflow pipe and removing foreign matter from the processing liquid; a pressure regulating valve for adjusting the pressure of the gas supplied to the pump to adjust a discharge pressure indicating the pressure at which the pump discharges the processing liquid; and a control section for controlling the pressure regulating valve when the pump starts to drive to perform a pressurization process, wherein the pressurization process includes a process of gradually increasing the pressure of the gas supplied to the pump to gradually increase the discharge pressure to a target pressure.

2. The substrate processing apparatus of claim 1, further comprising a memory unit that stores historical information indicating information relating to the usage history of the filter unit, wherein the control unit adjusts the period during which the discharge pressure is gradually increased by the pressure increase process based on the historical information.

3. The substrate processing apparatus of claim 2, wherein the control unit adjusts the period during which the discharge pressure is gradually increased by the pressurization process by adjusting the pressure of the gas supplied to the pump at the start of the pressurization process based on the historical information.

4. A substrate processing apparatus as described in any one of claims 1 to 3, wherein the at least one circulation pipe includes a first circulation pipe and a second circulation pipe that is shorter than the first circulation pipe, the substrate processing apparatus further includes a circulation control mechanism that controls the circulation of the processing liquid through the first circulation pipe and the circulation of the processing liquid through the second circulation pipe, the control unit controls the circulation control mechanism when the pump starts to be driven to start the circulation of the processing liquid through the second circulation pipe, and the control unit controls the circulation control mechanism while the discharge pressure is gradually increasing by the pressure increase process to start the circulation of the processing liquid through the first circulation pipe and stop the circulation of the processing liquid through the second circulation pipe.

5. A substrate processing apparatus as described in any one of claims 1 to 4, wherein the pump has a first gas chamber and a second gas chamber into which the gas flows, and a first liquid chamber and a second liquid chamber into which the processing liquid flows, the first gas chamber and the second gas chamber each having a variable volume, the first liquid chamber and the second liquid chamber each having a variable volume, the processing liquid being discharged from the first liquid chamber to the inflow piping when the gas flows into the first gas chamber, and the processing liquid being discharged from the second liquid chamber to the inflow piping when the gas flows into the second gas chamber.

6. A substrate processing apparatus for processing substrates using a processing liquid, comprising: a processing liquid storage section for storing the processing liquid; an inflow pipe into which the processing liquid flows from the processing liquid storage section; at least one circulation pipe having an upstream end connected to the inflow pipe and a downstream end connected to the processing liquid storage section and for circulating the processing liquid; a circulation control mechanism for controlling the circulation of the processing liquid through the at least one circulation pipe; a pump disposed on the inflow pipe for circulating the processing liquid; a filter section disposed on the inflow pipe for removing foreign matter from the processing liquid; a drain pipe for discharging the processing liquid; a drain valve disposed on the drain pipe for controlling the flow of the processing liquid in the drain pipe; and a control section for controlling the circulation control mechanism, a discharge pressure indicating a pressure at which the pump discharges the processing liquid, and the drain valve to perform a drain process, a circulation start process, and a pressure increase process, the drainage process includes a process of increasing the discharge pressure to a first pressure when the pump starts to drive, and controlling the drain valve to discharge the processing liquid from the drainage piping; the control unit reduces the discharge pressure to a second pressure lower than the first pressure in response to discharging the processing liquid from the drainage piping; the control unit executes the circulation start process and the pressurization process in response to reducing the discharge pressure from the first pressure to the second pressure; the circulation start process includes a process of controlling the circulation control mechanism and the drain valve to stop discharging the processing liquid from the drainage piping and start circulating the processing liquid through one of the at least one circulation piping; and the pressurization process includes a process of gradually increasing the discharge pressure to a third pressure higher than the second pressure or a process of gradually increasing the discharge pressure to a third pressure higher than the second pressure.

7. The substrate processing apparatus according to claim 6, wherein the drainage pipe is connected to the filter unit or the inlet pipe.

8. The substrate processing apparatus according to claim 6, wherein the drainage pipe is connected to the inlet pipe upstream of a connection point between each of the at least one circulation pipe and the inlet pipe.

9. A substrate processing apparatus as described in any one of claims 6 to 8, further comprising a memory unit that stores historical information indicating information relating to the usage history of the filter unit, wherein the control unit adjusts the period during which the discharge pressure is increased stepwise or gradually by the pressure increase process based on the historical information.

10. The substrate processing apparatus of claim 9, wherein the control unit adjusts the period during which the discharge pressure is gradually increased by the pressurization process by adjusting the pressure of the gas supplied to the pump at the start of the pressurization process based on the historical information.

11. A substrate processing apparatus as described in any one of claims 6 to 10, wherein the at least one circulation piping includes a first circulation piping and a second circulation piping shorter than the first circulation piping; the circulation control mechanism controls the circulation of the processing liquid through the first circulation piping and the circulation of the processing liquid through the second circulation piping; the circulation start process includes a process of controlling the circulation control mechanism to start the circulation of the processing liquid through the second circulation piping; and the control unit controls the circulation control mechanism during the stepwise or gradual increase of the discharge pressure by the pressurization process to start the circulation of the processing liquid through the first circulation piping and stop the circulation of the processing liquid through the second circulation piping.

12. The substrate processing apparatus according to any one of claims 6 to 11, wherein the pump is driven by gas pressure.

13. The substrate processing apparatus of claim 12, wherein the pump has a first gas chamber and a second gas chamber into which the gas flows, and a first liquid chamber and a second liquid chamber into which the processing liquid flows, the first gas chamber and the second gas chamber each having a variable volume, the first liquid chamber and the second liquid chamber each having a variable volume, the processing liquid being discharged from the first liquid chamber to the inlet piping when the gas flows into the first gas chamber, and the processing liquid being discharged from the second liquid chamber to the inlet piping when the gas flows into the second gas chamber.

14. The substrate processing apparatus according to claim 6, wherein the first pressure is greater than the third pressure.

15. The substrate processing apparatus according to any one of claims 6 to 14, wherein the second pressure includes a pressure in a state where the driving of the pump is stopped.

16. A substrate processing method for processing a substrate using a substrate processing apparatus comprising: a processing liquid storage section for storing a processing liquid used for processing a substrate; an inflow pipe into which the processing liquid flows in from the processing liquid storage section; at least one circulation pipe having an upstream end connected to the inflow pipe and a downstream end connected to the processing liquid storage section for circulating the processing liquid; a pump disposed on the inflow pipe and driven by gas pressure to circulate the processing liquid; and a filter section disposed on the inflow pipe for removing foreign matter from the processing liquid, the substrate processing method comprising: a circulation start step of starting operation of the pump to start circulation of the processing liquid, the circulation start step comprising a step of performing a pressurization process when the pump starts to be driven, and the pressurization process comprising a process of gradually increasing a pressure of the gas supplied to the pump to gradually increase a discharge pressure indicating a pressure at which the pump discharges the processing liquid.

17. The substrate processing method according to claim 16, further comprising the step of adjusting a period during which the discharge pressure is gradually increased by the pressure increasing process, based on history information indicating information relating to a usage history of the filter unit.

18. The substrate processing method of claim 16, further comprising a step of adjusting the period during which the discharge pressure is gradually increased by the pressurization process by adjusting the pressure of the gas supplied to the pump at the start of the pressurization process based on history information indicating information regarding the usage history of the filter section.

19. A substrate processing method according to any one of claims 16 to 18, wherein the at least one circulation pipe includes a first circulation pipe and a second circulation pipe that is shorter than the first circulation pipe, and the circulation starting step includes: starting the circulation of the processing liquid through the second circulation pipe when the pump starts to be driven; and starting the circulation of the processing liquid through the first circulation pipe and stopping the circulation of the processing liquid through the second circulation pipe while the discharge pressure is gradually increased by the pressure increase process.

20. A substrate processing method for processing a substrate using a substrate processing apparatus comprising: a processing liquid storage section for storing a processing liquid used in processing a substrate; an inflow pipe into which the processing liquid flows from the processing liquid storage section; at least one circulation pipe having an upstream end connected to the inflow pipe and a downstream end connected to the processing liquid storage section for circulating the processing liquid; a pump disposed on the inflow pipe for circulating the processing liquid; a filter section disposed on the inflow pipe for removing foreign matter from the processing liquid; and a drain pipe for discharging the processing liquid, wherein the filter section has a filter membrane for capturing the foreign matter contained in the processing liquid, and the drain pipe discharges the processing liquid that has passed through the filter membrane, the substrate processing method comprising the steps of: increasing a discharge pressure indicating a pressure at which the pump discharges the processing liquid to a first pressure when the pump starts to operate, and discharging the processing liquid from the drain pipe; and reducing the discharge pressure to a second pressure lower than the first pressure in response to discharging the processing liquid from the drain pipe. and executing a circulation start process and a pressurization process in response to reducing the discharge pressure from the first pressure to the second pressure, wherein the circulation start process includes a process of starting circulation of the processing liquid through one of the at least one circulation pipes and stopping discharge of the processing liquid from the drainage pipe, and the pressurization process includes a process of gradually increasing the discharge pressure to a third pressure higher than the second pressure, or a process of gradually increasing the discharge pressure to the third pressure higher than the second pressure.

21. The substrate processing method according to claim 20, further comprising a step of adjusting a period during which the discharge pressure is increased stepwise or gradually by the pressure increase process, based on history information indicating information relating to a usage history of the filter section.

22. The substrate processing method of claim 20, further comprising a step of adjusting the period during which the discharge pressure is gradually increased by the pressurization process by adjusting the pressure of the gas supplied to the pump at the start of the pressurization process based on history information indicating information related to the usage history of the filter section.

23. A substrate processing method according to any one of claims 20 to 22, wherein the at least one circulation pipe includes a first circulation pipe and a second circulation pipe that is shorter than the first circulation pipe, the circulation start process includes a process of starting the circulation of the processing liquid through the second circulation pipe, and the substrate processing method further includes a step of starting the circulation of the processing liquid through the first circulation pipe and stopping the circulation of the processing liquid through the second circulation pipe during the step-wise or gradual increase of the discharge pressure by the pressure increase process.

24. The substrate processing method according to any one of claims 20 to 23, wherein the first pressure is greater than the third pressure.

25. A substrate processing method according to any one of claims 20 to 24, wherein the step of reducing the discharge pressure to the second pressure lower than the first pressure includes the step of stopping the driving of the pump.

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