Semiconductor structure for a semiconductor component

Abstract

Proposed is a semiconductor structure (1) for a semiconductor component, the semiconductor structure (1) comprising a first n-doped semiconductor layer (4) which has an n-type doping (cn) made up of a first dopant concentration (cA) of a first n-dopant and a second dopant concentration (cB) of a second n-dopant that differs from the first n-dopant, the first n-dopant being provided for setting a mechanical property of the semiconductor structure (1), the second n-dopant being provided for setting an n-type conductivity, and the first dopant concentration (cA) of the first n-dopant in the first n-doped semiconductor layer (4) being at most as high as the second dopant concentration (cB) of the second n-dopant.

Description

[0001] 2022PF02127 June 5, 2024 P2023,0229 WO N - 1 - Description SEMICONDUCTOR STRUCTURE FOR A SEMICONDUCTOR COMPONENT A semiconductor structure for a semiconductor component is specified. For example, the semiconductor structure is suitable for a semiconductor component that emits or detects electromagnetic radiation, where the radiation can have, for example, a wavelength in the visible, approximately red to infrared spectral range. Semiconductor components that emit red or infrared radiation can, for example, be produced from compound semiconductors based on arsenide. Tellurium, for example, can be considered as an n-dopant. However, due to its particle size, tellurium causes relatively large strain in the semiconductor crystal. This leads, among other things, to an increased risk of breakage. One problem to be solved here is, among other things, to specify a semiconductor structure of improved quality.This object is achieved, inter alia, by a semiconductor structure having the features of the independent claim. Further advantages and configurations of the semiconductor structure are the subject matter of the dependent claims. According to at least one embodiment of a semiconductor structure for a semiconductor component, said structure comprises a first n-doped semiconductor layer with an n- 2022PF02127 June 5, 2024 P2023,0229 WO N - 2 - doping. The n-doping can be composed of a first dopant concentration of a first n-dopant and a second dopant concentration of a second n-dopant that is different from the first n-dopant. In this case, a basic doping can be achieved by means of the first n-dopant, and an adaptation to a desired level of the n-doping can be achieved by means of the second n-dopant, starting from the basic doping.Co-doping from the first and second n-dopants advantageously enables a combination of properties that characterize the respective n-dopant. According to at least one embodiment or configuration, the first n-dopant is provided to adjust a mechanical property of the semiconductor structure. For example, the mechanical property can be the hardness, i.e., the mechanical resistance that the semiconductor structure offers to mechanical penetration by another body. Furthermore, the second n-dopant can be provided to adjust or adapt an n-conductivity of the first n-doped semiconductor layer or the semiconductor structure.By combining the first and second n-dopants, it is thus possible, for example, to adjust the mechanical and electrical properties of the first n-doped semiconductor layer or of the semiconductor structure in a targeted manner. According to at least one embodiment or configuration, the first dopant concentration of the first n-dopant in the first n-doped semiconductor layer is, at least in some regions, preferably in all regions, in each case at most as large as the second dopant concentration of the second n-dopant. In particular, the first dopant concentration of the first n-dopant in the first n-doped semiconductor layer is lower than the second dopant concentration of the second n-dopant.For example, the second n-type dopant can be a material that leads to lower stress in the semiconductor structure than the first n-type dopant. By combining the first and second n-type dopant, the stress can be advantageously reduced compared to a semiconductor structure doped only with the first n-type dopant. This allows the semiconductor structure to be processed more effectively during manufacturing, for example, in a wafer assembly. This can reduce the fracture rate and advantageously increase the yield.According to at least one embodiment of a semiconductor structure for a semiconductor component, said structure comprises a first n-doped semiconductor layer with an n-doping composed of a first dopant concentration of a first n-dopant and a second dopant concentration of a second n-dopant that is different from the first n-dopant, wherein the first n-dopant is provided to adjust a mechanical property of the semiconductor structure, the second n-dopant is provided to adjust an n-conductivity, and the first dopant concentration of the first n-dopant in the first n-doped semiconductor layer is, at least in some regions, at most as large as the second dopant concentration of the second n-dopant. For example, the first dopant concentration can have values ​​between 10 and 15. 16 cm -3and including 5*10 17 cm -3 Furthermore, the second dopant concentration can be between 5*10 17 cm -3 and including 2*10 21 cm -3 Furthermore, the n-doping can have values ​​between 5*10 17 cm -3 and including 2*10 21 cm -3assume. According to at least one embodiment or configuration, the first n-dopant has a larger particle size than the second n-dopant. Due to the smaller particle size, the second n-dopant can have a better adaptation to a lattice constant of a semiconductor material contained in the first n-doped semiconductor layer or in the semiconductor structure and can therefore integrate better into a crystal structure of the semiconductor material than the first n-dopant, which leads, for example, to lower stresses. By combining the first and second n-dopants, it is therefore possible to reduce the stresses compared to a semiconductor structure with an n-doping consisting solely of the first n-dopant.According to at least one embodiment or configuration, the first n-doped semiconductor layer has regions of different levels of n-doping, wherein a ratio of the second dopant concentration to the first dopant concentration is greater in a region of higher n-doping than in a region of lower n-doping. The increased use of the second n-dopant in more highly doped regions can prevent greater strains in the crystal structure, which are caused, for example, by the first n-dopant, and thus achieve better crystal quality.According to at least one embodiment or configuration, the semiconductor structure is suitable for use in the low-frequency range of the visible spectrum down to a range of even lower frequencies bordering the low-frequency range, for example, for use in the red to infrared wavelength range. In this case, the semiconductor structure can be based, for example, on at least one arsenide compound semiconductor. "Based on an arsenide compound semiconductor" in this context means, for example, that such a semiconductor structure or a part thereof contains Al. x Ga 1-xAszP1-z, where 0 ^ x ^ 1 and 0 ^ z ^ 1. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it can have one or more dopants as well as additional components. According to at least one embodiment or configuration, the first n-doped semiconductor layer is an n-doped AlGaAsP, AlGaAs, or GaAs layer. According to at least one embodiment or configuration, the first n-dopant is a dopant that is suitable for a semiconductor structure with an application in the low-frequency range of the visible spectrum down to a range of even lower frequencies adjacent to the low-frequency range, for example in the red to the infrared wavelength range. The same can apply to the second n-dopant. For example, tellurium (Te) is considered as the first n-dopant.Furthermore, silicon (Si), for example, can be considered as the second n-dopant. According to at least one embodiment or configuration, the semiconductor structure comprises a second n-doped semiconductor layer with an n-doping composed of a first dopant concentration of the first n-dopant and a second dopant concentration of the second n-dopant, wherein the n-doping of the second n-doped semiconductor layer is lower than the n-doping of the first n-doped semiconductor layer. The ratio of the first dopant concentration to the second dopant concentration can be specifically adjusted such that the second n-doped semiconductor layer has the desired properties, for example the desired hardness and n-conductivity.For example, the first dopant concentration of the first n-dopant in the second n-doped semiconductor layer is at most as large as the second dopant concentration of the second n-dopant. According to at least one embodiment or configuration, the second n-doped semiconductor layer is an n-doped GaAs layer. The second n-doped semiconductor layer can form a heterostructure with the first n-doped semiconductor layer, for example a GaAs / AlGaAsP or AlGaAs heterostructure. 2022PF02127 June 5, 2024 P2023,0229 WO N - 7 - According to at least one embodiment or configuration, the first n-doped semiconductor layer is grown on the second n-doped semiconductor layer. For example, the first n-doped semiconductor layer can be grown epitaxially on the second n-doped semiconductor layer.Furthermore, the semiconductor structure can have a growth substrate on which the second n-doped semiconductor layer has been grown, in particular epitaxially. For example, the second n-doped semiconductor layer can be a buffer layer intended to reduce a lattice mismatch between the growth substrate and the first n-doped semiconductor layer. The n-doping can increase in a growth direction in which the semiconductor layers have grown on top of one another. The increase can, for example, occur in steps, with doping levels that are constant in some regions. Accordingly, the first and second dopant concentrations can each increase in steps in the growth direction, with doping levels that are constant in some regions. However, it is also possible for the increase to occur continuously, at least in some regions.According to at least one embodiment or configuration, the semiconductor structure has an active zone grown on the first n-doped semiconductor layer and a p-doped semiconductor layer grown on the active zone. 2022PF02127 June 5, 2024 P2023,0229 WO N - 8 - The active zone can be provided for generating or detecting electromagnetic radiation, wherein the radiation has, for example, a wavelength in the visible, approximately red to infrared, spectral range. In the simplest case, the active zone comprises a pn junction. However, it is also possible for the active zone to contain a sequence of individual layers by means of which a quantum well structure, for example a single quantum well structure (SQW) or multiple quantum well structure (MQW), is formed.According to at least one embodiment or configuration, the semiconductor structure has a further first n-doped semiconductor layer, a further active zone, and a further p-doped semiconductor layer, which are grown on top of one another in the specified order, wherein the further first n-doped semiconductor layer is arranged on the p-doped semiconductor layer. The semiconductor structure can therefore have two monolithically integrated active zones. For example, the first n-doped layers, the active zones, and the p-doped layers can have the same structure and, in particular, be identically formed. However, it is also possible for them to differ from one another. For example, it is conceivable that the active zones are designed for the emission or detection of radiation of different wavelengths.According to at least one embodiment or configuration, the semiconductor structure comprises an n-doped tunnel layer arranged between the p-doped semiconductor layer and the further first n-doped semiconductor layer. In particular, the n-doped tunnel layer has an n-doping composed of a first dopant concentration of the first n-dopant and a second dopant concentration of the second n-dopant. The n-doping of the n-doped tunnel layer can be greater than the n-doping of the first n-doped semiconductor layer(s). For example, the first dopant concentration of the first n-dopant in the n-doped tunnel layer is at most as large as the second dopant concentration of the second n-dopant.According to at least one embodiment or configuration, all n-doped semiconductor layers of the semiconductor structure each have an n-doping composed of a first dopant concentration of the first n-dopant and a second dopant concentration of the second n-dopant, which is different from the first n-dopant. The composition can be specifically selected such that, for example, the mechanical and electrical properties of the respective layer are optimally adjusted for their determination in the semiconductor structure. For example, the first dopant concentration of the first n-dopant in all n-doped semiconductor layers is at most as large as the second dopant concentration of the second n-dopant. According to at least one embodiment of an optoelectronic semiconductor component, this has a semiconductor structure of the type described above.For example, the optoelectronic semiconductor component can be a radiation-emitting or detecting component that emits or detects radiation with a wavelength in the visible, approximately red to infrared, spectral range. The optoelectronic semiconductor component can have an n-contact and a p-contact, which allows it to be electrically connected from the outside. An n-conducting region of the optoelectronic semiconductor component, which comprises the first n-doped semiconductor layer and optionally further n-doped semiconductor layers, can be electrically supplied by means of the n-contact. Furthermore, a p-conducting region of the optoelectronic semiconductor component, which comprises the p-doped semiconductor layer and optionally further p-doped semiconductor layers, can be electrically supplied by means of the p-contact.The radiation-emitting semiconductor component can be an LED, in particular an infrared LED (IRED), or a laser diode such as a high-power laser diode or a VCSEL (vertical-cavity surface-emitting laser). The semiconductor structure or the optoelectronic semiconductor component is suitable, for example, for vehicle applications, for example, as a distance sensor in autonomous driving, for mobile phone applications, or for industrial applications. Further advantages, advantageous embodiments, and further developments emerge from the exemplary embodiments described below in conjunction with the figures. 2022PF02127 5.June 2024 P2023,0229 WO N - 11 - Shown are: Figure 1 shows a cross-sectional view of a semiconductor structure according to a first exemplary embodiment, Figure 2 shows a doping profile according to a first exemplary embodiment, Figure 3 shows a cross-sectional view of a semiconductor structure according to a second exemplary embodiment, and Figure 4A shows a cross-sectional view of a semiconductor structure and Figure 4B shows a doping profile according to a comparative example. In the exemplary embodiments and figures, identical, similar or equally acting elements can each be provided with the same or similar reference numerals. The illustrated elements and their relative sizes to one another are not necessarily to be regarded as true to scale; rather, individual elements can be illustrated in an exaggerated manner for better illustration and / or for better understanding. Figure 1 shows a first exemplary embodiment of a semiconductor structure 1 in a schematic cross-sectional view.The semiconductor structure 1 comprises a growth substrate 2 and a semiconductor layer sequence 10 arranged on the growth substrate 2. In particular, the semiconductor layer sequence 10 is grown epitaxially on the growth substrate 2, for example. For example, semiconductor materials such as GaAs or SiC are suitable for the growth substrate 2. Depending on the application, the growth substrate 2 can be at least thinned or completely removed after the production of the semiconductor layer sequence 10. 2022PF02127 June 5, 2024 P2023,0229 WO N - 12 - Semiconductor materials based on arsenide compound semiconductors are suitable for the semiconductor layer sequence 10, so that, as already mentioned above, the semiconductor layer sequence 10 or a part thereof contains Al. x Ga 1-x Ace z P 1-zcan include, where 0 ^ x ^ 1 and 0 ^ z ^ 1. The semiconductor layer sequence 10 comprises a first n-doped semiconductor layer 4, an active zone 5 and a p-doped semiconductor layer 6, which follow one another in a vertical direction V in the specified order. In particular, the vertical direction V is a growth direction in which the growth of the semiconductor layer sequence 10 has taken place. The first n-doped semiconductor layer 4 is formed, for example, from AlGaAs or AlGaAsP. Furthermore, the p-doped semiconductor layer 6 can also be formed from AlGaAs or AlGaAsP. In the simplest case, the active zone 5 can comprise a pn junction. However, it is also possible for the active zone 5 to contain a sequence of individual layers by means of which a quantum well structure, for example a single quantum well structure (SQW, single quantum well) or multiple quantum well structure (MQW, multiple quantum well), is formed.The active zone 5 can be provided for generating or detecting electromagnetic radiation, wherein the radiation has, for example, a wavelength in the visible, approximately red to infrared, spectral range. A substantial portion of the radiation can, for example, enter or exit through a first main surface 1A of the semiconductor structure 1, which is arranged on a side of the semiconductor structure 1 facing away from the growth substrate 2. Furthermore, the semiconductor layer sequence 10 can comprise a second n-doped semiconductor layer 3, which is arranged on a side of the first n-doped semiconductor layer 4 facing the growth substrate 2. The second n-doped semiconductor layer 3 comprises, for example, GaAs and thus forms a heterostructure with the first n-doped semiconductor layer 4.The second n-doped semiconductor layer 3 can serve as a buffer layer that reduces lattice mismatch between the growth substrate 2 and the first n-doped semiconductor layer 4. The first n-doped semiconductor layer 4 has an n-doping c. n (see Figure 2), which consists of a first dopant concentration c A a first n-dopant and a second dopant concentration c Ba second n-dopant, which is different from the first n-dopant. In particular, the first n-dopant is intended to adjust a mechanical property of the semiconductor structure 1, while the second n-dopant is intended to adjust or adapt an n-conductivity of the first n-doped semiconductor layer 4 or the semiconductor structure 1. For example, the mechanical property can be the hardness. By combining the first and second n-dopants, the mechanical and electrical properties of the first n-doped semiconductor layer 4 or the semiconductor structure 1 can be specifically adjusted. For example, a basic doping can be achieved by means of the first n-dopant, and an adaptation to a desired level of the n-doping c can be achieved by means of the second n-dopant, starting from the basic doping. nFor example, the first dopant concentration c A in the first n-doped semiconductor layer 4 at least in some regions, preferably in all regions, at most as large as the second dopant concentration of the second n-dopant c B . The first dopant concentration c A can contain values ​​between 10 and 15 16 cm -3 and including 5*10 17 cm -3 Furthermore, the second dopant concentration c B Values ​​between and including 5*10 17 cm -3 and including 2*10 21 cm -3Furthermore, the second n-doped semiconductor layer 3 can also have an n-doping composed of a first dopant concentration of the first n-dopant and a second dopant concentration of the second n-dopant. The ratio of the first dopant concentration to the second dopant concentration can be specifically adjusted such that the second n-doped semiconductor layer 3 has the desired properties, for example the desired hardness and n-conductivity. For example, the first dopant concentration of the first n-dopant in the second n-doped semiconductor layer 3 is at most as large as the second dopant concentration of the second n-dopant. Furthermore, the n-doping of the second n-doped semiconductor layer 3 can be lower than the n-doping of the first n-doped semiconductor layer 4. The n-doping can therefore increase in the vertical direction V.The increase is, for example, step-like, wherein a step can be formed between the first and second n-doped semiconductor layer 2022PF02127 June 5, 2024 P2023,0229 WO N - 15 - 4, 3. However, it is also possible for the increase to be continuous, at least in some regions. The first and second n-dopants are, for example, dopants which, due to their band gap, are suitable for an arsenide-based semiconductor structure 1. In this case, tellurium (Te), for example, can be used as the first n-dopant, and silicon (Si), for example, can be used as the second n-dopant. Advantageously, silicon has a smaller particle size than tellurium. Compared to an n-doping consisting of Te (cf. Figures 4A and 4B), co-doping with Te and Si can reduce the strain of the semiconductor structure 1 while still maintaining the desired n-conductivity.Due to the stress reduction, the semiconductor structure 1 can be processed better during production, which takes place, for example, in a wafer composite. The breakage rate can thus be reduced and the yield advantageously increased. Furthermore, the semiconductor structure 1 has sufficient mechanical stability due to the first n-dopant. Overall, the semiconductor structure 1 and thus also an optoelectronic component comprising the semiconductor structure 1 have improved quality. In conjunction with the diagram shown in Figure 2, in which a layer thickness d of the semiconductor structure 1 in nm is shown on the abscissa and a dopant concentration c in cm. -3 2022PF02127 5 June 2024 P2023,0229 WO N - 16 - properties of the first n-doped semiconductor layer 4 are explained in more detail. The first n-doped semiconductor layer 4 has an n- doping c nwith a stepped profile, i.e. with region-wise constant doping levels. In a first region, which can range from a layer thickness d1 of approximately 100 nm to a layer thickness d2 of approximately 3600 nm, the n-doping c n for example about 10 18 cm -3 . In a second region, which follows the first region in the vertical direction V and can range from the layer thickness d2, which is approximately 3600 nm, to a layer thickness d3, which is approximately 7000 nm, the n-doping c n higher than in the first area and is, for example, about 7*10 19 cm -3 . The n-doping c n consists of the first dopant concentration c A and the second dopant concentration c B together, where the first dopant concentration c A and the second dopant concentration c Bhave constant levels in the first and second regions, and the doping level in the second region is higher than in the first region. Furthermore, the second dopant concentration c B higher than the first dopant concentration c A . The first dopant concentration in the first region is c A1 = about 4.5*10 16 cm -3 and in the second area c A2 = about 1017 cm -3 . Furthermore, the second dopant concentration in the first region c B1 = c n (in the first area) - c A1 = about 0.96*10 18 cm -3 and in the second area c B2 = c n (in the second area) - cA2 = about 6.99*10 19 cm -3 . A portion of the first dopant concentration c A1 at the n-doping c n is 2022PF02127 5 June 2024 P2023,0229 WO N - 17 - so in the first area about 4.5*10 16 cm -3 / 10 18 cm -3= about 0.045. The proportion of the second dopant concentration c B1 is complementary to this approximately 1 – 0.045 = 0.955. Furthermore, the proportion of the first dopant concentration c A2 at the n-doping c n in the second area about 10 17 cm -3 / 7*10 19 cm -3 = about 0.0014. The proportion of the second dopant concentration c B2 is complementary to this approximately 1 – 0.0014 = 0.9986. Thus, the proportion of the second dopant concentration c B at the n-doping c n in the second region, i.e. in the region of higher n-doping c n , greater than in the first region. The ratio of the second dopant concentration to the first dopant concentration in the first region is c B1 / c A1 = about 0.96*10 18 cm -3 / 4.5*10 16 cm -3 = about 21, while in the second area c B2 / c A2 = about 6.99*10 19 cm -3 / 10 17 cm -3= approximately 690 and is thus many times greater in the more highly doped second region than in the less doped first region. A further exemplary embodiment of a semiconductor structure 1 is explained in more detail with reference to Figure 3. In comparison to the exemplary embodiment shown in Figure 1, the semiconductor structure 1 comprises a further semiconductor layer sequence 10' which is arranged downstream of the semiconductor layer sequence 10 in the vertical direction V. The further semiconductor layer sequence 10' comprises a further first n-doped semiconductor layer 4', a further active zone 5' and a further p-doped semiconductor layer 6', which are arranged, in particular grown, on top of one another in the specified order, wherein 2022PF02127 June 5, 2024 P2023,0229 WO N - 18 - the further first n-doped semiconductor layer 4' is arranged on the p-doped semiconductor layer 6 of the semiconductor layer sequence 10.For example, the first n-doped layers 4, 4', the active zones 5, 5', and p-doped layers 6, 6' can have the same structure and, in particular, be identically formed. However, it is also possible for them to differ from one another. For example, it is conceivable that the active zones 5, 5' are designed for the emission or detection of radiation of different wavelengths. The two semiconductor layer sequences 10, 10' or active zones 5, 5' can be monolithically integrated. This means, for example, that the semiconductor layer sequences 10, 10' form a continuous layer sequence that does not require an additional connecting agent, such as a solder or adhesive material. For example, the semiconductor structure 1 comprises a tunnel junction 11 between the two semiconductor layer sequences 10, 10'. The tunnel junction 11 can have an n-doped tunnel layer 7 on a side facing the semiconductor layer sequence 10'.Furthermore, the tunnel junction 11 can have a p-doped tunnel layer 8 on a side facing the semiconductor layer sequence 10. In particular, the n-doped tunnel layer 7 has an n-doping composed of a first dopant concentration of the first n-dopant and a second dopant concentration of the second n-dopant. The n-doping of the n-doped tunnel layer 7 can be greater than the n-doping of the first n-doped semiconductor layer 4, 4'. Furthermore, it is possible for the first dopant concentration of the first n-dopant in the n-doped tunnel layer 7 to be at most as great as the second dopant concentration of the second n-dopant. The semiconductor structure 1 can furthermore have all the features and advantages explained in connection with the first embodiment.A comparative example of a semiconductor structure 100 is explained in more detail in conjunction with Figures 4A and 4B. The semiconductor structure 100 comprises a substrate 200, a first n-doped layer 400, an active zone 500, a p-doped layer 600, and a second n-doped layer 300. The first n-doped layer 400 is an n-AlGaAs layer. The second n-doped layer 300 is an n-GaAs layer. The n-doped layers 300, 400 are doped with a single n-dopant, such as tellurium. In other words, the n-doping is c. n with the first dopant concentration c Aidentical (cf. Figure 4B). In the case of n-doping with tellurium, such a semiconductor structure 100 exhibits high stress due to the particle size, particularly in more highly doped regions. Furthermore, the exclusive doping with tellurium contributes to the semiconductor structure 100 having a relatively high hardness. Overall, this leads to poorer processability and a higher fracture rate compared to the exemplary embodiments. The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses any new feature and any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly specified in the patent claims or exemplary embodiments.This patent application claims priority from German patent application 102023117461.4, the disclosure of which is hereby incorporated by reference.

[0002] 2022PF02127 June 5, 2024 P2023,0229 WO N - 21 - List of reference symbols 1 Semiconductor structure 1A first main surface 2 Growth substrate 3 second n-doped semiconductor layer 4 first n-doped semiconductor layer 4' further first n-doped semiconductor layer 5 active zone 5' further active zone 6 p-doped semiconductor layer 6' further p-doped semiconductor layer 7 n-doped tunnel layer 8 p-doped tunnel layer 10 Semiconductor layer sequence 10' further semiconductor layer sequence 11 Tunnel junction 100 Semiconductor structure according to comparative example 200 Growth substrate 300 second n-doped semiconductor layer 400 first n-doped semiconductor layer 500 active zone 600 p-doped semiconductor layer c n n-doping c A, c A1 , c A2 first dopant concentration c B, cB1 , c B2 second dopant concentration d, d1, d 2, d3Layer thickness of the semiconductor structure V vertical direction

Claims

2022PF02127 June 5, 2024 P2023,0229 WO N - 22 - Claims 1. Semiconductor structure (1) for a semiconductor component, wherein the semiconductor structure (1) comprises a first n-doped semiconductor layer (4) having an n-doping (c n ) consisting of a first dopant concentration (c A ) of a first n-dopant and a second dopant concentration (c B ) of a second n-dopant which is different from the first n-dopant, wherein ^ the first n-dopant has a larger particle size than the second n-dopant and is intended to adjust a mechanical property of the semiconductor structure (1), ^ the second n-dopant is intended to adjust an n-conductivity, and ^ the first dopant concentration (c A) of the first n-dopant in the first n-doped semiconductor layer (4) is at least partially at most as large as the second dopant concentration (c B ) of the second n-dopant.

2. Semiconductor structure (1) according to the preceding claim, wherein the first n-doped semiconductor layer (4) has regions of different levels of n-doping (c n ), wherein a ratio of the second dopant concentration (c B ) to the first dopant concentration (c A ) is greater in a region of higher n-doping than in a region of lower n-doping.

3. Semiconductor structure (1) according to one of the preceding claims, wherein the first n-dopant is tellurium. 2022PF02127 June 5, 2024 P2023,0229 WO N - 23 - 4. Semiconductor structure (1) according to one of the preceding claims, wherein the second n-dopant is silicon.

5. Semiconductor structure (1) according to one of the preceding claims, which is based on at least one arsenide compound semiconductor.

6. Semiconductor structure (1) according to one of the preceding claims, wherein the first n-doped semiconductor layer (4) is an n-doped AlGaAsP, AlGaAs or GaAs layer.

7. Semiconductor structure (1) according to one of the preceding claims, which comprises a second n-doped semiconductor layer (3) having an n-doping (c n ) consisting of a first dopant concentration (c A ) of the first n-dopant and a second dopant concentration (c B ) of the second n-dopant, wherein the n- doping (c n ) of the second n-doped semiconductor layer (3) is less than the n-doping (c n) of the first n-doped semiconductor layer (4).

8. Semiconductor structure (1) according to the preceding claim, wherein the second n-doped semiconductor layer (3) is an n-doped GaAs layer and forms a heterostructure with the first n-doped semiconductor layer (4).

9. Semiconductor structure (1) according to one of the two preceding claims, wherein the first n-doped semiconductor layer (4) is grown on the second n-doped semiconductor layer (3). 2022PF02127 June 5, 2024 P2023,0229 WO N - 24 - 10. Semiconductor structure (1) according to one of claims 7 to 9, which has a growth substrate (2), wherein the second n-doped semiconductor layer (3) is grown on the growth substrate (2).

11. Semiconductor structure (1) according to one of the preceding claims, which has an active zone (5) grown on the first n-doped semiconductor layer (4) and a p-doped semiconductor layer (6) grown on the active zone (5).

12. Semiconductor structure (1) according to the preceding claim, which has a further first n-doped semiconductor layer (4'), a further active zone (5') and a further p-doped semiconductor layer (6'), which are grown on top of one another in the specified order, wherein the further first n-doped semiconductor layer (4') is arranged on the p-doped semiconductor layer (6). 13.Semiconductor structure (1) according to the preceding claim, which has an n-doped tunnel layer (7), wherein the n-doped tunnel layer (7) is arranged between the p-doped semiconductor layer (6) and the further first n-doped semiconductor layer (4') and has an n-doping (c. n ) consisting of a first dopant concentration (c A ) of the first n-dopant and a second dopant concentration (c B ) of the second n-dopant, wherein the n-doping (c n ) of the n-doped tunnel layer (7) is greater than the n-doping (c n ) of the first n-doped semiconductor layer (4). 2022PF02127 5 June 2024 P2023,0229 WO N - 25 - 14. Semiconductor structure (1) according to one of the preceding claims, wherein the first dopant concentration (c A ) between 10 16 and 5*10 17 cm -315. Semiconductor structure (1) according to one of the preceding claims, wherein the second dopant concentration (c B ) between 5*10 17 and 2*10 21 cm -3 amounts.

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