Magnetron sputtering device

Abstract

The present application relates to a magnetron sputtering device, comprising a support base and a magnet assembly, wherein an adjustment assembly is provided on the support base; the magnet assembly comprises a magnet yoke, first-type magnet blocks, second-type magnet blocks and third-type magnet blocks; the adjustment assembly is connected to the magnet yoke, and the adjustment assembly is configured to adjust the distance between the magnet assembly and a target material; and the first-type magnet blocks, the second-type magnet blocks and the third-type magnet blocks are separately arranged on the magnet yoke, and in a first direction, the first-type magnet blocks are located at positions at two ends of the magnet yoke, the third-type magnet blocks are located at a middle position of the magnet yoke, and the second-type magnet blocks are located between the first-type magnet blocks and the third-type magnet blocks.

Description

Magnetron sputtering device

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on July 17, 2023, with application number 202310872187.3, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the technical field of sputtering coating processes, for example, to a magnetron sputtering device. Background Art

[0003] Currently, the magnet poles in the middle of the magnetic bar in the magnetron sputtering device are N / S facing upward, and the magnet poles on the outside are S / N facing upward, and the magnetization direction of all magnets is vertically upward or vertically downward. During the actual operation, the target in the magnetron sputtering device is constantly rotating. During the rotation of the target, as shown in FIG1 , due to the presence of the “U-shaped etching track 330” at the end of the magnetic rod, the axial etching component at the end of the “U-shaped etching track 330” (in the direction indicated by arrow A in FIG1 ) is significantly greater than the etching component in the middle (in the direction indicated by arrow B in FIG1 ), resulting in an axial etching rate at the end of the magnetic rod being greater than the etching rate in the middle of the magnetic rod. As a result, deep spots appear at the end of the etching track during the etching process. As the target is consumed, the surface of the target here is closer to the magnetic rod, the magnetic field strength is stronger, and the etching phenomenon at the end of the magnetic rod is aggravated, eventually forming a “V”-shaped etching groove. When the “V”-shaped etching groove is etched through, the target expires and cannot be used any further. However, a relatively thick target material remains in the middle area of ​​the target, resulting in low target utilization, waste of target material, and increased cost.

[0004] Therefore, it is urgent to design a magnetron sputtering device to avoid the above situation.

[0005] Summary of the Invention

[0006] The present application proposes a magnetron sputtering device that can improve the utilization rate of target materials and save costs.

[0007] The present application adopts the following technical solution: The present application provides a magnetron sputtering device, comprising:

[0008] A support base, wherein an adjustment component is provided on the support base;

[0009] a magnet assembly, the magnet assembly comprising a yoke, a first type of magnet block, a second type of magnet block, and a third type of magnet block; the adjustment assembly is connected to the yoke, and the adjustment assembly is configured to adjust the distance between the magnet assembly and the target;

[0010] The first type of magnet blocks, the second type of magnet blocks, and the third type of magnet blocks are respectively arranged on the magnetic yoke. Along the first direction, the first type of magnet blocks are located at both ends of the magnetic yoke, the third type of magnet blocks are located in the middle of the magnetic yoke, and the second type of magnet blocks are located between the first type of magnet blocks and the third type of magnet blocks.

[0011] The magnetization direction of the first type of magnet block is inclined downward toward the middle position of the magnetic yoke, and the magnetization direction of the third type of magnet block is vertically upward; or,

[0012] The magnetizing direction of the first type of magnet block is inclined upward and away from the middle position of the magnetic yoke, and the magnetizing direction of the third type of magnet block is vertically downward.

[0013] Exemplarily, in response to determining that the magnetizing direction of the first type of magnet block is tilted obliquely downward toward the middle position of the magnetic yoke, the magnetizing direction of the second type of magnet block is tilted obliquely upward toward the middle position of the magnetic yoke; in response to determining that the magnetizing direction of the first type of magnet block is tilted obliquely upward toward the middle position away from the magnetic yoke, the magnetizing direction of the second type of magnet block is tilted obliquely downward toward the middle position away from the magnetic yoke.

[0014] Exemplarily, the first type of magnet blocks are provided in plurality, and the plurality of first type of magnet blocks are respectively located at both ends of the magnetic yoke.

[0015] Exemplarily, the second type of magnet blocks are provided in plurality, and along the direction close to the middle position of the magnetic yoke, the magnetization direction of the plurality of second type magnet blocks transitions from obliquely upward to vertical, or the magnetization direction of the plurality of second type magnet blocks (220) transitions from obliquely downward to vertical.

[0016] Exemplarily, the magnetization direction of the plurality of second-type magnet blocks gradually decreases from an oblique upward tilt toward a vertical direction, or the magnetization direction of the plurality of second-type magnet blocks (220) gradually decreases from an oblique downward tilt toward a vertical direction.

[0017] Exemplarily, the third type of magnet block is provided in plurality, and the plurality of the third type of magnet blocks are respectively located at the middle position of the magnetic yoke.

[0018] Exemplarily, a preset distance is set between the first type of magnet block and the second type of magnet block, and the preset distance is 5 mm to 30 mm.

[0019] Exemplarily, a flow channel is provided on the support seat, and the flow channel is connected to a cooling water source.

[0020] Exemplarily, a water inlet and a water outlet are provided at both ends of the support seat, the water inlet and the water outlet are respectively connected to the flow channel, and the water inlet and the water outlet are respectively connected to the cooling water source.

[0021] Exemplarily, the adjusting assembly is configured as a bolt, and the adjusting assembly is threadedly connected to the supporting seat.

[0022] The present application provides a magnetron sputtering device, comprising a support base and a magnet assembly, wherein the support base is provided with an adjustment assembly. The magnet assembly comprises a yoke, a first type of magnet block, a second type of magnet block, and a third type of magnet block. The adjustment assembly is connected to the yoke and is configured to adjust the distance between the magnet assembly and a target material. The first type of magnet blocks, the second type of magnet blocks and the third type of magnet blocks are all arranged on the magnetic yoke. Along the first direction, the first type of magnet blocks are located at both ends of the magnetic yoke, the third type of magnet blocks are located in the middle of the magnetic yoke, and the second type of magnet blocks are located between the first type of magnet blocks and the third type of magnet blocks. By changing the magnetization direction of the first type of magnet blocks and the second type of magnet blocks, the distribution of magnetic lines of force at the two ends of the magnet assembly is changed. It can be seen from the magnetic lines of force on the surface of the target material that the simulated contour lines (etching direction) have changed relative to the etching direction of the magnetic rod in the related art. As the thickness of the target material gradually decreases, the etching direction of the target material changes, that is, the etching direction of the surface and interior of the target material changes from the direction nearly perpendicular to the target material surface in the related art to a direction inclined toward the end of the target material. In this way, as the target material is used, the etched groove at the end of the target material will be inclined toward the end of the target material. In other words, the technical solution of the present application can disperse the etching amount of the upper end of the target material in the related technology to the adjacent position of the end as the target material is continuously etched, so that the end of the target material is etched later, the etching amount of the middle target material is increased, the overall use time and utilization rate of the target material are extended, the service life is extended, and costs are saved. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] FIG1 is a schematic diagram of a U-shaped etching track on a target surface in the related art;

[0024] FIG2 is a schematic structural diagram of a magnetron sputtering device provided in one embodiment of the present application;

[0025] FIG3 is a simulation diagram of the magnetic field of the magnet assembly and the target material etching morphology provided in one embodiment of the present application;

[0026] FIG4 is a top view of a magnet assembly provided in one embodiment of the present application;

[0027] FIG5 is a cross-sectional view of a CC section of a magnet assembly provided in one embodiment of the present application;

[0028] FIG6 is a cross-sectional view of a magnet assembly CC provided by another embodiment of the present application;

[0029] FIG7 is a comparison diagram of a target material (residual target) curve after etching by a magnetron sputtering device provided in one embodiment of the present application and a target material (residual target) curve after etching by a magnetron sputtering device in the related art;

[0030] FIG8 is a top view of a magnet assembly provided in another embodiment of the present application;

[0031] FIG9 is a cross-sectional view of a magnet assembly DD provided in one embodiment of the present application;

[0032] FIG10 is a cross-sectional view of the magnet assembly DD provided in one embodiment of the present application.

[0033] Reference numerals

[0034] 100, support base; 110, adjustment assembly; 120, flow channel; 130, water inlet; 140, water outlet;

[0035] 200, magnet assembly; 210, first type magnet block; 220, second type magnet block; 230, third type magnet block; 240, yoke;

[0036] 300, target material; 310, magnetic lines of force; 320, simulated contour lines; 330, U-shaped etching track. DETAILED DESCRIPTION

[0037] The technical solution of the present application will be further explained below with reference to the accompanying drawings and through specific implementation methods.

[0038] In the description of this application, unless otherwise expressly specified or limited, the terms "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and can refer to internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0039] In this application, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0040] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., regarding orientations or positions, are based on the orientations or positions shown in the accompanying drawings and are intended solely for ease of description and simplified operation. They do not indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first" and "second" are used solely for descriptive purposes and have no special meanings.

[0041] As shown in Figures 2 to 6, this embodiment provides a magnetron sputtering device, which mainly includes a support base 100 and a magnet assembly 200, wherein an adjustment assembly 110 is provided on the support base 100. The magnet assembly 200 includes a yoke 240, a first type of magnet block 210, a second type of magnet block 220, and a third type of magnet block 230. The adjustment assembly 110 is connected to the yoke 240 and is configured to adjust the distance between the magnet assembly 200 and the target 300. The first type of magnet block 210, the second type of magnet block 220 and the third type of magnet block 230 are all arranged on the magnetic yoke 240. Along the first direction, the first type of magnet block 210 is located at both ends of the magnetic yoke 240, the third type of magnet block 230 is located in the middle of the magnetic yoke 240, and the second type of magnet block 220 is located between the first type of magnet block 210 and the third type of magnet block 230. The magnetization direction of the first type of magnet block 210 is inclined obliquely downward toward the middle of the magnetic yoke 240 and forms an angle α with the vertical direction. The magnetization direction of the second type of magnet block 220 is inclined obliquely upward toward the middle of the magnetic yoke 240 and forms an angle β with the vertical direction.

[0042] For example, in this embodiment, the magnetizing direction of the first type of magnet block 210 is tilted downward at an angle α toward the middle of the yoke 240. As shown in FIG3 , the tilt angle α is the angle between the magnetizing direction of the first type of magnet block 210 and the vertical direction. For example, the tilt angle α can be set to 30°, 45°, 60°, etc.; the magnetizing direction of the second type of magnet block 220 is tilted upward at an angle β toward the middle of the yoke 240. As shown in FIG3 , the tilt angle β is the angle between the magnetizing direction of the second type of magnet block 220 and the vertical direction. For example, the tilt angle β can be set to 30°, 45°, 60°, etc.; the magnetizing direction of the third type of magnet block 230 is vertically upward. It should be noted that the first direction in this embodiment is the X-axis direction in FIG2 . The upward direction is the direction away from the yoke 240 in the vertical direction, and the downward direction is the direction toward the yoke 240 in the vertical direction.

[0043] Based on the above design, the magnetron sputtering device in this embodiment usually acts as a cathode to etch the target material 300. The magnetic yoke 240, as a soft iron with a relatively high magnetic permeability, has a good magnetic conductivity on the one hand, and can conduct and constrain the magnetic lines of force 310. On the other hand, the magnetic yoke 240 can also bend and deform, and the distance between the magnet assembly 200 and the target material 300 can be adjusted by adjusting the assembly 110, thereby adjusting the strength of the magnetic field, which is conducive to improving the flexibility and applicability of the magnetron sputtering device. For example, the adjustment assembly 110 is configured as a bolt, and the adjustment assembly 110 is threadedly connected to the support seat 100. The operator can adjust the magnetic yoke 240 by screwing the bolt, thereby changing the distance between the magnet block on the magnetic yoke 240 and the target material 300, thereby playing a role in adjusting the strength of the magnetic field.

[0044] In this embodiment, the target 300 in the magnetron sputtering apparatus is disposed around the magnet assembly 200, and the target 300 is rotatable relative to the magnet assembly 200. For example, the target 300 is sleeve-shaped, and the magnet assembly 200 is disposed within the sleeve. The sputtering coating process occurs on one side of the target 300. It should be noted that Figure 3 only illustrates the relative positions of the magnet assembly 200 and the target 300.

[0045] The directions indicated by the arrows in the first type magnet block 210 , the second type magnet block 220 and the third type magnet block 230 in FIG. 3 and FIG. 5 are the magnetization directions of the first type magnet block 210 , the second type magnet block 220 and the third type magnet block 230 .

[0046] Exemplarily, a plurality of first-type magnet blocks 210 are provided, which are symmetrically arranged at both ends of the yoke 240. It should be noted that in actual operation, usually two first-type magnet blocks 210 are provided, and the two first-type magnet blocks 210 are respectively located at both ends of the yoke 240, and the magnetization directions of the two first-type magnet blocks 210 are both inclined downwardly toward the middle position of the yoke 240. Exemplarily, the first-type magnet block 210 and the black area in Figure 4 are both set as the S side of the magnetic pole, and the second-type magnet block 220 and the third-type magnet block 230 in the middle area are both set as the N side of the magnetic pole. Exemplarily, two second-type magnet blocks 220 are also provided, and the magnetization directions of the two second-type magnet blocks 220 are both inclined upwardly toward the middle position of the yoke 240. Of course, the second-type magnet block 220 near the end side of the yoke 240 can also be provided in plurality, and the magnetization directions of the plurality of second-type magnet blocks 220 are the same. Exemplarily, a plurality of third-type magnet blocks 230 are provided, each of which is located in the middle of the yoke 240 and between the second-type magnet blocks 220 at both ends. For example, ten third-type magnet blocks 230 are provided, and the ten third-type magnet blocks 230 are arranged in parallel, with the magnetization direction of the ten third-type magnet blocks 230 all arranged vertically upward. Exemplarily, the second-type magnet block 220, the third-type magnet block 230, and the shaded area in Figure 4 are all arranged to be the north side of the magnetic pole.

[0047] Furthermore, in another embodiment, the first type magnet block 210 and the black area in FIG. 4 are both configured with the N-side of the magnetic pole, while the second type magnet block 220 and the third type magnet block 230 in the middle area are both configured with the S-side of the magnetic pole. Furthermore, the magnetization directions of the first type magnet block 210, the second type magnet block 220, and the third type magnet block 230 can be adjusted accordingly. As shown in FIG. 6 , the magnetization direction of the first type magnet block 210 is tilted upward, away from the center of the magnetic yoke 240, while the magnetization direction of the third type magnet block 230 is vertically downward. In this embodiment, the magnetization direction of the second type magnet block 220 is tilted downward, away from the center of the magnetic yoke 240.

[0048] Compared with the related art, in the above embodiment, the magnetization direction of the first type of magnet block 210 and the second type of magnet block 220 is changed, so that the distribution of the magnetic lines of force 310 at the two ends of the magnet assembly 200 is changed. Then, it can be seen from the magnetic lines of force 310 on the surface of the target material 300 that the simulated contour line 320 (etching direction) has changed relative to the etching direction of the magnetic rod in the related art, that is, the etching direction of the surface and interior of the target material 300 is changed from the direction nearly perpendicular to the surface of the target material 300 in the related art to a direction inclined toward the end of the target material 300. In this way, as the target material 300 is used, the etched groove at the end of the target material 300 will be inclined toward the end of the target material 300. That is, the magnetron sputtering device provided in the present application disperses the etching amount at a fixed position on the target material 300 in the related art to an adjacent position as the target material 300 is continuously etched, so that the end of the target material 300 is etched later, thereby extending the overall service time and utilization rate of the target material 300, extending the service life, and saving costs.

[0049] Compared with the magnetron sputtering device in the related art, for a 9 mm thick target material 300, after etching 9 mm vertically downward, the target material 300 will be etched through. However, in the magnetron sputtering device in this embodiment, since the etching direction of the end of the target material 300 is tilted, more target material 300 is used in the etching direction. Under the condition of the same etching speed, the target material 300 in other areas can also be fully utilized, and the utilization rate of the target material 300 is effectively improved, saving costs.

[0050] It should be emphasized that the magnetization directions of the first type magnet block 210, the second type magnet block 220 and the third type magnet block 230 in this embodiment are fixed when the first type magnet block 210, the second type magnet block 220 and the third type magnet block 230 are processed and manufactured. In other words, the magnetization directions of the first type magnet block 210, the second type magnet block 220 and the third type magnet block 230 are determined during the production process.

[0051] For example, the magnet blank of the first type magnet block 210 is magnetized from top to bottom. When processing the first type magnet block 210, the operator can cut the magnet blank according to actual needs, thereby cutting out the first type magnet block 210 with a specified magnetization direction. Similarly, the second type magnet block 220 and the third type magnet block 230 are also produced in the same manner. It should be noted that the above processing technology is a conventional process in the art and will not be further elaborated here.

[0052] As shown in FIG7 , a curve of the target material 300 (residual target) after etching using the magnetron sputtering device in this embodiment is compared with a curve of the target material 300 (residual target) after etching using the magnetron sputtering device in the related art. The horizontal axis represents the length of the target material 300 along the first direction, for example, 0 is recorded from one end of the target material 300, and the test is performed every 20 mm. The vertical axis represents the overall outer diameter of the target material, and the units of the horizontal and vertical axes are both mm. When the target material is etched through, the smaller the overall outer diameter of the residual target, the less unused target material 300 remains, the higher the utilization rate of the target material 300, and the longer the time it takes for the etched groove to be broken through, thereby reflecting that the target material 300 is used for a longer time and has a higher lifespan. It can be seen from FIG7 that after the target material is etched through, the thickness of the residual target in the middle of the target material in this embodiment is much smaller than the thickness of the residual target in the middle of the target material in the related art. Therefore, it can be seen that the target material utilization rate of the magnetron sputtering device provided in the embodiment of the present application is much higher than the target material utilization rate of the magnetron sputtering device in the related art.

[0053] As shown in FIG2 , in this embodiment, a flow channel 120 is provided on the support base 100, and the flow channel 120 is connected to a cooling water source. For example, a water inlet 130 and a water outlet 140 are provided at both ends of the support base 100, and both the water inlet 130 and the water outlet 140 are connected to the flow channel 120, and both the water inlet 130 and the water outlet 140 are connected to the cooling water source. For example, the cooling water source can be set as an external cooling water tank, which contains cooling water and is connected to a water pump, thereby cooling the target material 300 in the magnetron sputtering device and improving the service life of the target material 300.

[0054] In addition, as shown in FIG3 , in this embodiment, a preset distance is set between the first type magnet block 210 and the second type magnet block 220. The preset distance is between 5 mm and 30 mm, and can be set to values ​​such as 5 mm, 10 mm, 15 mm, 20 mm, and 30 mm. The setting of the preset distance can make the magnetic field of the magnet assembly 200 closed and continuous, thereby improving the operating yield of the magnetron sputtering device when etching the target material 300.

[0055] As shown in Figures 8-10, the main difference between the magnetron sputtering device provided in this embodiment and the previous embodiment is that: in this embodiment, multiple second-type magnet blocks 220 are provided. Along the direction near the middle position of the magnetic yoke 240, the magnetization direction of the second-type magnet blocks 220 transitions from an upward tilt to a vertical direction. Exemplarily, there are six second-type magnet blocks 220, of which three second-type magnet blocks 220 are arranged at one end of the third-type magnet block 230, and the remaining three second-type magnet blocks 220 are arranged at the other end of the third-type magnet block 230. Along the first direction, the magnetization direction of the three second-type magnet blocks 220 located at one end of the third-type magnet block 230 transitions from an upward tilt to a vertical direction. Exemplarily, along the direction from the end to the middle of the magnet assembly, the angles between the magnetization directions of the three second-type magnet blocks 220 and the vertical direction are 60°, 45°, and 30°, respectively. Similarly, along the direction from the end to the middle of the magnet assembly, the angles between the magnetizing directions of the three second-type magnet blocks 220 located at the other end of the third-type magnet block 230 and the vertical direction are set to 60°, 45°, and 30° respectively. It should be pointed out that the 60°, 45°, and 30° mentioned above all refer to the angles in the vertical direction with the magnetic yoke 240. Of course, the magnetizing directions of the second-type magnet blocks 220 can also be set to other progressive angles, which will not be described here one by one. By gradually transitioning the magnetizing directions of the second-type magnet blocks 220 from obliquely upward to vertical, the magnetic field of the magnet assembly 200 can be made to transition more smoothly from both ends to the middle, thereby improving the flexibility and applicability of the magnetron sputtering device.

[0056] The remaining structures of the magnetron sputtering device in this embodiment are the same as those in the previous embodiment and will not be described in detail here.

[0057] The magnetron sputtering device provided in the embodiment of the present application improves the magnetic field distribution of the magnet assembly 200 by adjusting the magnetizing directions of the first type of magnet block 210 and the second type of magnet block 220 accordingly. The magnetron sputtering device provided in the embodiment of the present application can improve the utilization rate of the target material and save costs. Note that in the description of this specification, the descriptions with reference to the terms "some embodiments", "other embodiments", etc. mean that the specific features, structures, materials or characteristics described in combination with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

Claims

1. Magnetron sputtering device, comprising: A support base (100), wherein an adjustment component (110) is disposed on the support base (100); A magnet assembly (200), the magnet assembly (200) comprising a yoke (240), a first type of magnet block (210), a second type of magnet block (220), and a third type of magnet block (230); the adjustment assembly (110) is connected to the yoke (240), and the adjustment assembly (110) is configured to adjust the distance between the magnet assembly (200) and the target material (300); The first type of magnet block (210), the second type of magnet block (220) and the third type of magnet block (230) are respectively arranged on the magnetic yoke (240); along a first direction, the first type of magnet block (210) is located at both ends of the magnetic yoke (240), the third type of magnet block (230) is located at the middle of the magnetic yoke (240), and the second type of magnet block (220) is located between the first type of magnet block (210) and the third type of magnet block (230); The magnetizing direction of the first type of magnet block (210) is inclined obliquely downward toward the middle position of the magnetic yoke (240), and the magnetizing direction of the third type of magnet block (230) is vertically upward; or, The magnetization direction of the first type of magnet block (210) is inclined upwardly and away from the middle position of the magnetic yoke (240), and the magnetization direction of the third type of magnet block (230) is vertically downward.

2. The magnetron sputtering device according to claim 1, wherein: In response to determining that the magnetization direction of the first type of magnet block (210) is tilted obliquely downward toward the middle position of the yoke (240), the magnetization direction of the second type of magnet block (220) is tilted obliquely upward toward the middle position of the yoke (240); In response to determining that the magnetizing direction of the first type magnet block (210) is tilted upwardly and away from the middle position of the yoke (240), the magnetizing direction of the second type magnet block (220) is tilted downwardly and away from the middle position of the yoke (240).

3. The magnetron sputtering device according to claim 1, wherein: The first type of magnet blocks (210) are arranged in plurality, and the plurality of first type of magnet blocks (210) are respectively located at two end positions of the magnetic yoke (240).

4. The magnetron sputtering device according to claim 3, wherein: The second type of magnet blocks (220) are arranged in plurality, and along a direction close to a middle position of the magnetic yoke (240), the magnetization directions of the plurality of second type of magnet blocks (220) transition from obliquely upward to a vertical direction, or the magnetization directions of the plurality of second type of magnet blocks (220) transition from obliquely downward to a vertical direction.

5. The magnetron sputtering device according to claim 4, wherein: The magnetization directions of the plurality of second-type magnet blocks (220) gradually decrease from obliquely upward to vertical, or the magnetization directions of the plurality of second-type magnet blocks (220) gradually decrease from obliquely downward to vertical.

6. The magnetron sputtering device according to claim 1, wherein: The third type magnet block (230) is provided in plurality, and the plurality of the third type magnet blocks (230) are respectively located at the middle position of the magnetic yoke (240).

7. The magnetron sputtering device according to claim 1, wherein: A preset distance is set between the first type of magnet block (210) and the second type of magnet block (220), and the preset distance is 5 mm to 30 mm.

8. The magnetron sputtering device according to any one of claims 1 to 7, wherein: The support seat (100) is provided with a flow channel (120), and the flow channel (120) is connected to a cooling water source.

9. The magnetron sputtering device according to claim 8, wherein: A water inlet (130) and a water outlet (140) are provided at both ends of the support seat (100); the water inlet (130) and the water outlet (140) are respectively connected to the flow channel (120), and the water inlet (130) and the water outlet (140) are respectively connected to the cooling water source.

10. The magnetron sputtering device according to claim 1, wherein: The adjustment component (110) is configured as a bolt, and the adjustment component (110) is threadedly connected to the support seat (100).

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