Biosensor and biosensor manufacturing method

Abstract

A biosensor and a biosensor manufacturing method are provided. The biosensor according to one aspect of the present invention comprises: a patterning layer having a source region, a drain region, a gate region and a channel region; and a substrate having one surface on which the patterning layer is deposited, and having a vertical microfluidic channel penetrating therethrough such that a portion of the gate region is exposed to the outside, wherein the channel region is disposed between the source region and the drain region and electrically connects the source region and the drain region, and a sensing material that selectively reacts to a target material can be fixed to the gate region.

Description

Biosensors and biosensor manufacturing methods

[0001] The present invention relates to a biosensor and a method for manufacturing the same, and more specifically, to a biosensor and a method for manufacturing the same, wherein a gate electrode formed horizontally on a substrate is connected to a microfluidic channel formed vertically below the gate electrode to increase the probability of binding between a detection substance and a target substance in a sample, thereby ultimately improving detection performance.

[0002] A biosensor is a type of electrochemical sensor that converts the binding of a target substance to be detected and a detection substance into an electrical signal using a FET (Field-effect transistor) element. It refers to a device that includes a biochemical substance binding element and a signal converter.

[0003] Biosensors must be designed and manufactured to exhibit significant changes in electrical signals upon binding of the target substance and the sensing material. Biosensors must also exhibit physical and chemical stability when exposed to sample solutions containing the target substance.

[0004] Typically, in semiconductor-based biosensors, only the channel region and gate region, which are covered by an insulating layer, are exposed to the sample solution, while the pad regions (source pad, drain pad, and gate pad) connected to the external electrical circuit are covered by an electrical insulating layer (passivation). At this time, the channel region is formed between the source and drain electrodes, and channel current is transmitted.

[0005] To increase the sensitivity of a biosensor, three major factors must be considered: first, the probability that the target substance reaches the sensor detection unit within the sample solution; second, the probability that the detection substance and the target substance bind to each other on the surface of the sensor detection unit; and third, the performance of the transducer, which efficiently converts the binding between the detection substance and the target substance into an electrical signal.

[0006] The purpose of the present invention is to increase sensor sensitivity by improving the first and second elements among these.

[0007] Generally, under the assumption that the target substance is uniformly distributed in the sample, it is known that only the target substance within a diffusion distance several times that of the sensor detection unit reaches the detection unit and reacts with the detection substance.

[0008] Conventional biosensors attach the sensing material to the channel insulating layer, but not to the gate region. To attach the sensing material to the channel insulating layer, a surface modification process is required to introduce a chemical group onto the surface of the channel insulating layer.

[0009] Typically, the channel insulating layer is an insulator, and a surface modification process suitable for insulators is used. Therefore, the surface modification process is difficult to apply to the gate region, which is a conductor.

[0010] Furthermore, conventional biosensors have limitations, such as the limited attachment of sensing materials to the channel region, resulting in a low absolute value of the sensor output signal. This increases the design difficulty of subsequent electrical circuits and increases design and manufacturing costs. Therefore, the development of biosensors with a larger sensing material attachment area may be considered.

[0011] Korean Patent Publication No. 10-1641085 discloses a nanomesh sensor utilizing a vertical microfluidic control device. However, this type of biosensor features a structure that integrates microfluidic structures vertically into channels. However, the manufacturing process for aligning the nanometer-sized channel structures with the microfluidic structures is difficult, resulting in low manufacturing costs and yields.

[0012] The present invention is intended to solve the above problems, and an object of the present invention is to provide a biosensor and a method for manufacturing the same that further improve sensitivity by increasing the probability that a target substance binds to a detection substance.

[0013] In addition, the purpose of the present invention is to provide a biosensor and a manufacturing method thereof that increases the yield of good products by reducing the difficulty of the manufacturing process while improving sensitivity, and consequently lowers the manufacturing cost.

[0014] The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art to which the present invention pertains from the description below.

[0015] According to one aspect of the present invention, a biosensor is provided, comprising: a patterning layer having a source region, a drain region, a gate region, and a channel region; and a substrate having a vertical microfluidic passage formed through the patterning layer on one surface and a portion of the gate region being exposed to the outside; wherein the channel region is positioned between the source region and the drain region and electrically connects the source region and the drain region, and a sensing material selectively reacting to a target material is fixed to the gate region.

[0016] At this time, a lower insulating layer laminated between the patterning layer and the substrate is further included, and the vertical microfluidic passage may be formed by additionally penetrating the lower insulating layer.

[0017] At this time, a gate nanostructure layer having a hole penetrating in the penetration direction of the vertical microfluidic passage can be formed on one side of the gate area.

[0018] At this time, the hole may have a cross-section perpendicular to the penetration direction in any one of circular, elliptical, and polygonal shapes.

[0019] At this time, the above holes are formed in multiple numbers, and the multiple holes can be formed repeatedly at a predetermined interval.

[0020] At this time, the distance between the centers of the plurality of holes may be 500 μm or less.

[0021] At this time, a first protective layer laminated on one surface of the patterning layer is further included, and a gate opening may be formed through the first protective layer so that the gate nanostructure layer is exposed to the outside.

[0022] At this time, a gate insulating layer is formed on the surface of the gate nanostructure layer, and the sensing material can be fixed to the gate insulating layer.

[0023] At this time, a channel opening may be formed through the first protective layer so as to be spaced apart from the gate opening so that the channel region is exposed to the outside.

[0024] At this time, a second protective layer laminated on one side of the first protective layer is further included, and a communication hole may be formed through the second protective layer so that the gate opening and the channel opening are exposed together to the outside.

[0025] At this time, the vertical microfluidic passage may be formed in multiple numbers.

[0026] At this time, the vertical microfluidic passage can be formed so that the size of the cross-section perpendicular to the penetration direction increases or decreases.

[0027] At this time, the vertical microfluidic channel may have a cross-sectional width perpendicular to the penetration direction of 10 nm to 5 mm.

[0028] According to another aspect of the present invention, there is provided a semiconductor device comprising: a lamination step of sequentially laminating a patterning layer, a lower insulating layer, and a substrate; an electrode forming step of forming a source region, a drain region, a gate region, and a channel region connecting the source region and the drain region by removing a portion of the patterning layer using a lithography process or an etching process; an ion implantation step of implanting ions into the source region, the drain region, and the gate region; a channel insulating layer forming step of forming a channel insulating layer on one surface of the channel region; a metal layer forming step of laminating a gate metal layer and a gate nanostructure layer on one surface of the gate region; a protective layer forming step of laminating a first protective layer on one surface of the patterning layer and forming a gate opening and a channel opening in the first protective layer such that the gate nanostructure layer and the channel insulating layer are exposed to the outside; a vertical microfluidic channel forming step of forming a vertical microfluidic channel by aligning the gate nanostructure layer with the substrate such that the gate nanostructure layer is exposed toward the substrate; and a sensing material fixing step of fixing a sensing material to a surface of the gate nanostructure layer. A method for manufacturing a biosensor, including:

[0029] At this time, in the electrode forming step, one hole of any shape among circular, elliptical, and polygonal may be formed in the gate nanostructure layer, or multiple holes may be formed repeatedly.

[0030] At this time, in the ion injection step, a source electrode ion leakage prevention layer, a drain electrode ion leakage prevention layer, a gate electrode ion leakage prevention layer, and a channel region ion injection prevention layer are formed on the surfaces of the source region, the drain region, the gate region, and the channel region before the ions are injected, and after the ions are injected, the source electrode ion leakage prevention layer, the drain electrode ion leakage prevention layer, the gate electrode ion leakage prevention layer, and the channel region ion injection prevention layer can be removed.

[0031] At this time, in the step of forming the channel insulating layer and metal layer, a channel insulating layer may be formed on one surface of the source region, the drain region, the channel region, and the gate region, and the channel insulating layer formed on one surface of the source region, the drain, and the gate region may be removed.

[0032] At this time, in the step of forming the channel insulating layer and metal layer, a source pad, a drain pad, and a gate pad can be formed on one surface of the source region, the drain region, and the gate region.

[0033] At this time, in the protective layer forming step, a second protective layer may be laminated on one surface of the first protective layer, and a communication hole may be formed in the second protective layer so that the gate opening and the channel opening are exposed to the outside.

[0034] At this time, in the sensing material fixing step, a gate insulating layer can be formed on the surface of the gate nanostructure layer and the sensing material can be fixed to the gate insulating layer.

[0035] A biosensor and a manufacturing method thereof according to one embodiment of the present invention form a portion of a gate electrode into a nanostructure of a suspended structure, thereby increasing the surface area exposed to a sample solution and increasing the density of a sensing material.

[0036] In addition, in a biosensor and a manufacturing method thereof according to one embodiment of the present invention, the gate nanostructure is directly connected to a vertical microfluidic passage, so that a sample solution passes through the gate nanostructure and is discharged out through the vertical microfluidic passage, and most of the target material in the sample passes through the gate, thereby dramatically increasing the probability that the target material binds to the detection material attached to the gate surface.

[0037] In addition, the biosensor and its manufacturing method according to one embodiment of the present invention form a fluid passage perpendicular to the gate, thereby greatly increasing the effective surface area where the sample solution meets the detection substance, thereby improving the characteristics of improving sensitivity, shortening the detection time, and preventing damage to the sensor during measurement.

[0038] In addition, in terms of difficulty of the manufacturing process, the biosensor and the manufacturing method thereof according to one embodiment of the present invention can lower the manufacturing cost and increase the yield of good products because the process of forming a microfluidic structure by aligning it on a gate electrode is much easier than the process of aligning a microfluidic structure on a nanochannel.

[0039] The effects of the present invention are not limited to the above-described effects, and should be understood to include all effects that can be inferred from the composition of the invention described in the description or claims of the present invention.

[0040] FIG. 1 is a perspective view illustrating a biosensor according to one embodiment of the present invention.

[0041] FIG. 2 is a plan view illustrating a biosensor according to one embodiment of the present invention.

[0042] Figure 3 is a cross-sectional view taken along line AA of Figure 2.

[0043] Figure 4 is a flowchart illustrating a method for manufacturing a biosensor according to one embodiment of the present invention.

[0044] Fig. 5 (a) is a top view showing a lamination step of a biosensor manufacturing method according to one embodiment of the present invention, and (b) is a cross-sectional view showing a cross-section along line BB of (a).

[0045] Fig. 6 (a) is a top view showing an electrode forming step of a biosensor manufacturing method according to one embodiment of the present invention, and (b) is a cross-sectional view taken along line CC of (a).

[0046] Fig. 7 (a) is a top view showing an ion injection step of a biosensor manufacturing method according to one embodiment of the present invention, and (b) is a cross-sectional view showing a cross-section along the DD line of (a).

[0047] Fig. 8 (a) is a top view showing a step of forming a channel insulation layer and a metal layer in a method for manufacturing a biosensor according to one embodiment of the present invention, and (b) is a cross-sectional view taken along line EE of (a).

[0048] Fig. 9 (a) is a top view showing a protective layer forming step of a biosensor manufacturing method according to one embodiment of the present invention, and (b) is a cross-sectional view showing a cross-section along the FF line of (a).

[0049] Fig. 10 (a) is a top view showing a vertical microfluidic channel forming step of a biosensor manufacturing method according to one embodiment of the present invention, and (b) is a cross-sectional view showing a cross-section along the line GG of (a).

[0050] Fig. 11 (a) is a top view showing a sensing material fixation step of a biosensor manufacturing method according to one embodiment of the present invention, and (b) is a cross-sectional view showing a cross-section along the HH line of (a).

[0051] Hereinafter, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily practice the present invention. The present invention may be implemented in various different forms and is not limited to the embodiments described herein. To clearly explain the present invention, parts irrelevant to the description are omitted in the drawings, and the same reference numerals designate identical or similar components throughout the specification.

[0052] The words and terms used in this specification and claims should not be construed as limited to their ordinary or dictionary meanings, but should be interpreted in a way that is consistent with the technical idea of ​​the present invention, in accordance with the principles by which the inventor can define terms and concepts in order to best explain his or her invention.

[0053] Therefore, the embodiments described in this specification and the configurations illustrated in the drawings correspond to a preferred embodiment of the present invention, and do not represent all of the technical ideas of the present invention, so there may be various equivalents and modified examples that can replace the configuration at the time of filing of the present invention.

[0054] In this specification, terms such as “include” or “have” are intended to describe the presence of a feature, number, step, operation, component, part or combination thereof described in the specification, but should be understood not to exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.

[0055] When a component is said to be "in front of," "behind," "above," or "below" another component, this includes not only being placed "in front of," "behind," "above," or "below" the other component in direct contact with it, but also if there is another component intervening therebetween. Furthermore, when a component is said to be "connected" to another component, this includes not only being directly connected to one another, but also being indirectly connected to one another, unless there are special circumstances.

[0056] Hereinafter, a biosensor (1) according to one embodiment of the present invention will be described with reference to the drawings.

[0057] Fig. 1 is a perspective view illustrating a biosensor according to one embodiment of the present invention. Fig. 2 is a plan view illustrating a biosensor according to one embodiment of the present invention. Fig. 3 is a cross-sectional view taken along line AA of Fig. 2. For convenience of explanation, the direction in which the X-axis illustrated in Fig. 1 faces is defined as the right direction, the direction in which the Y-axis faces is forward, and the direction in which the Z-axis faces is upward. However, this does not define an absolute direction but rather indicates a relative direction.

[0058] The biosensor (1) detects a change in charge when a target substance (T) present in a sample solution (S) combines with a detection substance (70) attached to a gate area (40) corresponding to a sensor detection section, thereby ultimately performing quantitative and qualitative detection of the target substance.

[0059] To this end, a biosensor (1) according to one embodiment of the present invention includes a substrate (10), a lower insulating layer (20), a patterning layer (30), a gate region (40), an electrode portion (50), a protective layer (60), a sensing material (70), and a vertical microfluidic channel (80).

[0060] As illustrated in FIGS. 1 and 2, a biosensor (1) according to one embodiment of the present invention forms a vertical microfluidic passage (80) formed on the lower side of a gate nanostructure layer (410) vertically penetrating the substrate (10), thereby forming a flow of a sample solution (S) containing a target substance (T) vertically rather than horizontally, unlike a conventional sensor method.

[0061] Accordingly, the sample solution (S) discharged through the vertical microfluidic channel (80) of the biosensor (1) is induced to be discharged only after passing through the gate nanostructure layer (410) where the target substance (T) is captured, thereby increasing the sensitivity of the biosensor (1).

[0062] Furthermore, the biosensor (1) according to one embodiment of the present invention can physically capture a target substance (T) by forming a gate nanostructure layer (410) in a mesh structure, and secondarily capture it by a detection substance (70). Therefore, the sensitivity of the biosensor (1) is high, so that even a very small amount of the target substance (T) can be detected.

[0063] Hereinafter, in order to explain in detail the structure of a biosensor (1) according to one embodiment of the present invention, a method for manufacturing a biosensor (S1) according to one embodiment of the present invention will be described with reference to FIGS. 4 to 11, and each component of the biosensor (1) and its structure will be explained.

[0064] FIG. 4 is a flowchart illustrating a biosensor manufacturing method according to an embodiment of the present invention. FIG. 5 (a) is a top view illustrating a lamination step of a biosensor manufacturing method according to an embodiment of the present invention, and (b) is a cross-sectional view taken along line BB of (a). FIG. 6 (a) is a top view illustrating an electrode forming step of a biosensor manufacturing method according to an embodiment of the present invention, and (b) is a cross-sectional view taken along line CC of (a). FIG. 7 (a) is a top view illustrating an ion implantation step of a biosensor manufacturing method according to an embodiment of the present invention, and (b) is a cross-sectional view taken along line DD of (a). FIG. 8 (a) is a top view illustrating a channel insulating layer and metal layer forming step of a biosensor manufacturing method according to an embodiment of the present invention, and (b) is a cross-sectional view taken along line EE of (a). (a) of Fig. 9 is a top view showing a protective layer forming step of a biosensor manufacturing method according to an embodiment of the present invention, and (b) is a cross-sectional view taken along the line FF of (a). (a) of Fig. 10 is a top view showing a vertical microfluidic channel forming step of a biosensor manufacturing method according to an embodiment of the present invention, and (b) is a cross-sectional view taken along the line GG of (a). (a) of Fig. 11 is a top view showing a sensing material fixing step of a biosensor manufacturing method according to an embodiment of the present invention, and (b) is a cross-sectional view taken along the line HH of (a).

[0065] A biosensor manufacturing method (S1) for manufacturing a biosensor (1) according to one embodiment of the present invention includes a lamination step (S10), an electrode formation step (S20), an ion injection step (S30), a channel insulation layer formation step (S40), a metal layer formation step (S50), a protective layer formation step (S60), a vertical microfluidic channel formation step (S70), and a detection material fixation step (S80).

[0066] As shown in Fig. 5, in the lamination step (S10), a lower insulating layer (20) and a patterning layer (30) are sequentially laminated on the upper surface of the substrate (10).

[0067] It is preferable that the substrate (10) be formed of a semiconductor, polymer, or non-conductive material. This is to minimize electrical interference of the substrate (10) with other components of the biosensor (1).

[0068] The substrate (10) forms the bottom surface of the biosensor (1). Accordingly, the substrate (10) supports other components of the biosensor (1) from the bottom.

[0069] The substrate (10) is formed in a plate shape extending in the front-back and left-right directions. As illustrated in Fig. 5, the substrate (10) of the present embodiment is formed in a rectangular plate shape.

[0070] The lower insulating layer (20) is disposed on the upper surface of the substrate (10). That is, the lower insulating layer (20) is disposed between the substrate (10) and the patterning layer (30) to support the patterning layer (30) so that the patterning layer (30) is fixed to the upper surface of the substrate (10).

[0071] The lower insulating layer (20) is formed of a non-conductive material to prevent current from flowing between the substrate (10) and the patterning layer (30). For example, the lower insulating layer (20) may be formed of any one of polymer, plastic, and glass. Accordingly, leakage current from the patterning layer (30) to the substrate (10) can be prevented.

[0072] In addition, in order to form a source region (320), a drain region (330), a gate region (40), and a channel region (310) to be described later on the patterning layer (30), the patterning layer (30) is formed of a material that can be selectively etched away from the patterning layer (30). For example, the patterning layer (30) may be formed of a material such as silicon, a compound semiconductor, or a polymer material.

[0073] The patterning layer (30) is formed of an electrically conductive material. For example, the patterning layer (30) may be formed of a semiconductor material. At this time, as illustrated in FIG. 1, the patterning layer (30) includes a channel region (310), a source region (320), a drain region (330), and a gate region (40).

[0074] As shown in (a) of FIG. 6, in the electrode formation step (S20), a channel region (310), a source region (320), a drain region (330), and a gate region (40) are formed in the patterning layer (30) by removing a portion of the patterning layer (30) using a lithography process and an etching process.

[0075] At this time, there is no limitation on the lithography process method used to form the channel region (310), source region (320), drain region (330), and gate region (40), and for example, it may be at least one of electron beam lithography, stepper, scanner, nano imprint, ion beam lithography, X-ray lithography, ultraviolet lithography, extreme ultraviolet lithography, or photolithography.

[0076] Additionally, there is no limitation on the etching process used to form the terminal and gate nanostructure layer, and the patterning layer (30) can be etched through wet etching, dry etching, or a combination of wet etching and dry etching.

[0077] At this time, since the matters related to the above-described lithography process and etching process are well known, detailed descriptions of the lithography process and etching process are omitted in this specification, and the lithography process and etching process mentioned below mean the above-described process.

[0078] As illustrated in (a) of FIG. 6, the channel region (310) electrically connects the source region (320) and the drain region (330). The source region (320) and the drain region (330) provide spaces for the source pad (510) and the drain pad (520), which will be described later, to be installed on the upper surface, respectively. At this time, the source region (320) and the drain region (330) are electrically conductive with the source pad (510) and the drain pad (520), respectively.

[0079] The gate region (40) is formed in another part spaced apart from a part where the channel region (310), source region (320), and drain region (330) of the lower insulating layer (20) are placed.

[0080] The gate region (40) may be formed separately from the channel region (310), the source region (320), and the drain region (330). The gate region (40) is formed of an electrically conductive material. For example, the gate region (40) may be formed of a semiconductor material.

[0081] As illustrated in Fig. 7, in the ion injection step (S30), ions are introduced into the source region (320), drain region (330), and gate region (40) to improve electrical conductivity. At this time, it is preferable that the ions injected are of high concentration.

[0082] At this time, in order to prevent the injected ions from randomly escaping, a process of forming a source electrode ion leakage prevention layer (321), a drain electrode ion leakage prevention layer (331), and a gate electrode ion leakage prevention layer (341) on the surfaces of the source region (320), the drain region (330), and the gate region (40) is performed first. At the same time, a channel region ion injection prevention layer (311) that suppresses the inflow of ions is formed on the surface of the channel region (310).

[0083] After the ion implantation process, the source electrode ion leakage prevention layer (321), the drain electrode ion leakage prevention layer (331), the gate electrode ion leakage prevention layer (341), and the channel region ion implantation prevention layer (311) are removed.

[0084] As illustrated in Fig. 8, in the channel insulating layer forming step (S40) and the metal layer forming step (S50), a channel insulating layer (312) that blocks electrical current with the sample solution is formed on the upper surface of the channel region (310). However, the channel insulating layer (312) formed on the upper surfaces of the source region (320), the drain region (330), and the gate region (40) is then selectively removed.

[0085] Additionally, a gate metal layer (420) and a gate nanostructure layer (410) are bonded to the gate region (40). The gate metal layer (420) and the gate nanostructure layer (410) are formed using a lithography process and an etching process.

[0086] However, the gate metal layer (420) and the gate insulating layer (430) to be described later may replace the gate region (40).

[0087]

[0088] *Meanwhile, the electrode portion (50) includes a source pad (510), a drain pad (520), and a gate pad (530). The source pad (510), the drain pad (520), and the gate pad (530) are respectively disposed on the source region (320), the drain region (330), and the gate metal layer (420) of the patterning layer (30). That is, no pad is formed on the upper side of the channel region (310).

[0089] At this time, the source pad (510), drain pad (520), and gate pad (530) may be formed separately. In addition, the gate pad (530) may be formed of a different metal separately from the gate metal layer (420), or the gate pad (530) may be formed simultaneously with the gate metal layer (420).

[0090] The source pad (510) and the drain pad (520) are electrically connected through the channel region (310). The gate pad (530) is disposed on the gate region (40). At this time, the gate pad (530) may be replaced with a gate metal layer (420).

[0091] A passivation layer is formed on the gate pad (530), source pad (510), and drain pad (520) to shield them from exposure to the sample solution.

[0092] As illustrated in FIGS. 1 and 8, the gate metal layer (420) is electrically connected to the gate pad (530). The gate metal layer (420) may be formed of an electrically conductive material.

[0093] As illustrated in FIG. 1 and FIG. 9, in the protective layer forming step (S60), a protective layer (60) is formed on the upper side of the peripheral portion excluding the channel region (310) and the gate metal layer (420). At this time, the protective layer (60) includes a first protective layer (610) and a second protective layer (620) that are sequentially laminated from the bottom.

[0094] As illustrated in FIGS. 1 and 9, the protective layer (60) covers the patterning layer (30) and the electrode portion (50) except for the channel region (310) and the gate nanostructure layer (410). Conversely, the channel region (310) and the gate nanostructure layer (410) are not covered by the protective layer (60) and are exposed to the external sample.

[0095] The protective layer (60) is placed on the lower insulating layer (20). Specifically, the protective layer (60) overlaps the lower insulating layer (20) in the vertical direction with the patterning layer (30) and the electrode portion (50) interposed therebetween, excluding the channel region (310) and the gate nanostructure layer (410).

[0096] At this time, as shown in FIG. 9, the protective layer (60) includes a first protective layer (610) and a second protective layer (620).

[0097] The first protective layer (610) covers the peripheral area except for the channel region (310) and the gate nanostructure layer (410). The first protective layer (610) is disposed on the lower insulating layer (20). The first protective layer (610) is formed in a plate shape extending in the front-back, left-right, and right directions.

[0098] The first protective layer (610) is formed with a predetermined cross-section extending upward from the upper surface of the lower insulating layer (20). In addition, the first protective layer (610) is formed in a shape in which the outer periphery thereof corresponds to the outer periphery of the substrate (10) and the lower insulating layer (20).

[0099] As illustrated in Fig. 9, a channel opening (611) and a gate opening (612) are formed through the first protective layer (610). The channel opening (611) and the gate opening (612) are opened to the upper side of the channel region (310) and the gate nanostructure layer (410), respectively.

[0100] Accordingly, the channel region (310) and the gate nanostructure layer (410) are not covered by the first protective layer (610) and are exposed to the outside, so that they can come into direct contact with the sample solution (S).

[0101] A second protective layer (620) is disposed on one side of the first protective layer (610) opposite the lower insulating layer (20). The second protective layer (620) provides a fluid channel between the channel opening (611) and the gate opening (612) of the first protective layer (610). The second protective layer (620) is disposed on the first protective layer (610).

[0102] The second protective layer (620) is formed in a plate shape extending in the forward, backward, left, and right directions. In another embodiment, the second protective layer (620) is formed with a predetermined cross-section extending upward from the upper surface of the first protective layer (610). The second protective layer (620) is formed in a shape whose outer periphery corresponds to the outer periphery of the substrate (10), the lower insulating layer (20), and the first protective layer (610).

[0103] As illustrated in Fig. 9, a communication hole (621) is formed through the second protective layer (620). The communication hole (621) functions as a fluid channel between the sample solution introduced into the channel opening (611) and the gate opening (612) of the first protective layer (610).

[0104] The communication hole (621) is opened upwardly at the periphery including the channel opening (611) and the gate opening (612), and is in communication with the channel opening (611) and the gate opening (612), respectively. Accordingly, the channel opening (611) and the gate opening (612) are not covered by the second protective layer (620) but are exposed to the outside and can be in communication with each other.

[0105] Accordingly, the sample solution can be accommodated in the channel opening (611) and gate opening (612) of the first protective layer (610) and the communication hole (621) of the second protective layer (620).

[0106] As illustrated in Fig. 10, in the vertical microfluidic passage formation step (S70), a vertical microfluidic passage (80) is formed penetrating through the substrate (10) and the lower insulating layer (20) and through the gate nanostructure layer (410) to provide a vertical flow of oil.

[0107] At this time, the substrate (10) and the insulating layer (20) under the gate nanostructure layer (410) are removed, thereby forming a vertical microfluidic channel (80). To this end, lithography and dry etching processes can be used to form the vertical microfluidic channel (80).

[0108] Accordingly, the gate nanostructure layer (410), which is a part of the gate metal layer (420), is connected to the vertical microfluidic passage (80).

[0109] Meanwhile, the vertical microfluidic passage (80) may also be formed below the channel region (310), and the vertical microfluidic passage (80) may be formed as a plurality of passages. However, in the present embodiment, it is described that it is formed as a single passage below the gate nanostructure layer (410).

[0110] The vertical microfluidic channel (80) is connected to the gate opening (612) and functions as a fluid channel for the sample solution. Therefore, the sample solution can flow through the gate opening (612) of the first protective layer (610), the communication hole (621) of the second protective layer (620), the gate nanostructure layer (410), and the vertical microfluidic channel (80).

[0111] The gate nanostructure layer (410) includes a linear, circular, diamond-shaped, triangular, or honeycomb-shaped shape or a mesh structure shape that mixes at least one of the shapes so that the sample solution (S) can pass through and exit through the vertical microfluidic passage (80).

[0112] At this time, the gate metal layer (420) may be formed of a metal material. Additionally, the gate metal layer (420) may be formed of a highly doped low-resistivity semiconductor material.

[0113] A gate insulating layer (430) is formed on the surface of the gate metal layer (420). The gate insulating layer (430) is formed on all or part of the gate metal layer (420) through an oxidation process, a deposition process, or a surface modification process.

[0114] The gate insulating layer (430) and the channel insulating layer (312) can be manufactured so that at least a portion of the components of the insulator are identical, and thus a chemical group for attaching a sensing material (70) can be simultaneously introduced to the surfaces of the gate insulating layer (430) and the channel insulating layer (312) through a single surface modification process. At this time, the surface modification process includes physical, chemical, and electrical treatment processes.

[0115] As illustrated in Fig. 11, in the sensing material fixing step (S80), the sensing material (70) is fixed to the surface of the channel region (310) and the gate nanostructure layer (410) exposed to the outside by the channel opening (611) and the gate opening (612).

[0116] The detection material (70) reacts with the target material (T) in the sample solution to induce a change in the channel potential of the biosensor (1). This is used for quantitative and qualitative detection of biomaterials by changing the output current or output voltage.

[0117] Since the sample solution (S) is discharged into the vertical microfluidic channel (80) through the gate nanostructure layer (410), the binding probability of the detection material (70) on the surface of the gate nanostructure layer (410) and the target material (T) in the sample solution (S) increases. As a result, the sensitivity of the biosensor (1) can be further improved.

[0118] As illustrated in FIG. 4, a biosensor manufacturing method (S1) for manufacturing a biosensor (1) according to one embodiment of the present invention sequentially performs the stacking step (S10), electrode forming step (S20), ion injection step (S30), channel insulation layer forming step (S40), metal layer forming step (S50), protective layer forming step (S60), vertical microfluidic channel forming step (S70), and detection material fixing step (S80) described above, thereby manufacturing the biosensor (1) described above.

[0119] However, it is not necessary to manufacture in the above order, and the specific order may be modified in various ways depending on the purpose of the biosensor (1), such as target sensitivity and interference reduction.

[0120] As described above, preferred embodiments of the present invention have been described. It will be apparent to those skilled in the art that the present invention can be embodied in other specific forms, in addition to the embodiments described above, without departing from the spirit or scope thereof. Therefore, the above-described embodiments should be considered illustrative rather than restrictive, and accordingly, the present invention is not limited to the above description, but may be modified within the scope of the appended claims and their equivalents.

[0121] [National Research and Development Project Supporting This Invention]

[0122] [Project ID] 1545023018

[0123] [Assignment Number] 120091022CG000

[0124] [Ministry Name] Ministry of Agriculture, Food and Rural Affairs

[0125] [Name of project management (specialized) organization] National Institute of Agricultural and Food Technology Planning and Evaluation

[0126] [Research Project Name] Development of Livestock Disease Response Technology

[0127] [Research Project Title] Development of a Semiconductor Sensor-Based POCT System for Rapid Diagnosis of African Swine Fever

[0128] [Project Implementing Organization Name] Pohang University of Science and Technology Industry-Academic Cooperation Foundation

[0129] Research Period: April 29, 2020 - December 31, 2021

Claims

1. A patterning layer having a source region, a drain region, a gate region, and a channel region; and A substrate having a vertical microfluidic passage formed through the patterning layer on one side and a portion of the gate region exposed to the outside; The channel region is located between the source region and the drain region and electrically connects the source region and the drain region, A biosensor in which a detection material that selectively reacts to a target material is fixed in the above gate region.

2. In paragraph 1, Further comprising a lower insulating layer laminated between the patterning layer and the substrate; A biosensor in which the above vertical microfluidic channel is additionally formed by penetrating the lower insulating layer.

3. In paragraph 1, A biosensor, wherein a gate nanostructure layer having a hole penetrating in the penetrating direction of the vertical microfluidic channel is formed on one side of the gate region.

4. In paragraph 3, A biosensor wherein the above hole has a cross-section perpendicular to the penetration direction in the shape of any one of a circle, an ellipse, and a polygon.

5. In paragraph 3, The above holes are formed in multiple pieces, A biosensor in which a plurality of the above holes are repeatedly formed at predetermined intervals.

6. In paragraph 5, A biosensor wherein the distance between the centers of the plurality of holes is 500 μm or less.

7. In paragraph 3, Further comprising a first protective layer laminated on one surface of the patterning layer; A biosensor in which a gate opening is formed through the first protective layer so that the gate nanostructure layer is exposed to the outside.

8. In paragraph 3, A gate insulating layer is formed on the surface of the above gate nanostructure layer, A biosensor wherein the above sensing material is fixed to the gate insulating layer.

9. In paragraph 7, A biosensor in which a channel opening is formed through the first protective layer and is spaced apart from the gate opening so that the channel region is exposed to the outside.

10. In paragraph 9, Further comprising a second protective layer laminated on one side of the first protective layer; A biosensor in which a communication hole is formed through the second protective layer so that the gate opening and the channel opening are exposed together to the outside.

11. In paragraph 1, A biosensor in which the above vertical microfluidic channels are formed in multiple units.

12. In paragraph 1, A biosensor in which the vertical microfluidic channel is formed so that the size of the cross-section perpendicular to the penetration direction increases or decreases.

13. In paragraph 1, A biosensor in which the vertical microfluidic channel has a cross-sectional width perpendicular to the penetration direction of 10 nm to 5 mm.

14. A lamination step of sequentially laminating a patterning layer, a lower insulating layer, and a substrate; An electrode forming step of forming a source region, a drain region, a gate region, and a channel region connecting the source region and the drain region by removing a portion of the patterning layer using a lithography process or an etching process; An ion implantation step of implanting ions into the source region, the drain region, and the gate region; A channel insulation layer forming step of forming a channel insulation layer on one side of the above channel region; A metal layer forming step of laminating a gate metal layer and a gate nanostructure layer on one surface of the gate region; A protective layer forming step of laminating a first protective layer on one surface of the patterning layer and forming a gate opening and a channel opening in the first protective layer so that the gate nanostructure layer and the channel insulating layer are exposed to the outside; A vertical microfluidic channel forming step of forming a vertical microfluidic channel by aligning the gate nanostructure layer with the substrate so that the gate nanostructure layer is exposed toward the substrate; and A method for manufacturing a biosensor, comprising: a step of fixing a detection material to the surface of the gate nanostructure layer; 15. In paragraph 14, In the above electrode formation step, A method for manufacturing a biosensor, wherein one or more holes having a shape of one of a circle, an ellipse, and a polygon are formed in the gate nanostructure layer.

16. In paragraph 14, In the above ion injection step, Before injecting the ions, a source electrode ion leakage prevention layer, a drain electrode ion leakage prevention layer, a gate electrode ion leakage prevention layer, and a channel region ion injection prevention layer are formed on the surfaces of the source region, the drain region, the gate region, and the channel region, respectively. A method for manufacturing a biosensor, wherein after injecting the ions, the source electrode ion leakage prevention layer, the drain electrode ion leakage prevention layer, the gate electrode ion leakage prevention layer, and the channel region ion injection prevention layer are removed.

17. In paragraph 14, In the above channel insulation layer and metal layer forming step, A method for manufacturing a biosensor, comprising forming a channel insulating layer on one surface of the source region, the drain region, the channel region, and the gate region, and removing the channel insulating layer formed on one surface of the source region, the drain, and the gate region.

18. In paragraph 17, In the above channel insulation layer and metal layer forming step, A method for manufacturing a biosensor, wherein a source pad, a drain pad, and a gate pad are formed on one surface of the source region, the drain region, and the gate region.

19. In paragraph 14, In the above protective layer formation step, A method for manufacturing a biosensor, wherein a second protective layer is laminated on one surface of the first protective layer and a communication hole is formed in the second protective layer so that the gate opening and the channel opening are exposed to the outside.

20. In paragraph 14, In the above detection material fixation step, A method for manufacturing a biosensor, comprising forming a gate insulating layer on the surface of the gate nanostructure layer and fixing the sensing material to the gate insulating layer.

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