Light-emitting element and light-emitting device comprising same

Abstract

The present invention relates to a light-emitting element and a light-emitting device comprising same. The light-emitting device according to an embodiment of the present invention comprises: first to third light-emitting devices, which include a substrate, a plurality of protrusions protruding from one surface of the substrate, and a light-emitting structure disposed on the substrate; and a circuit board on which the first to third light-emitting devices are mounted. Each of the first to third light-emitting elements includes a first conductive semiconductor layer, an active layer of a multiple quantum well structure, and a second conductive semiconductor layer, and the number of pairs of barrier layers and well layers constituting the active layer of the first light-emitting element is different from the number of pairs of barrier layers and well layers constituting the active layer of the second light-emitting element.

Description

Light-emitting element and light-emitting device including the same

[0001] The present invention relates to a light-emitting element and a light-emitting device including the same.

[0002] Light-emitting diodes (LEDs) are widely used as self-luminous light sources. They utilize the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible light, and ultraviolet light.

[0003] As light-emitting diodes increase in luminous efficiency, they are being applied to various fields including display devices and lighting devices. The size of light-emitting diodes is also gradually decreasing, and mini LEDs and micro LEDs are being used.

[0004] Recently, nitride semiconductors have been widely used as base materials for light-emitting devices such as light-emitting diodes (LEDs). Nitride semiconductors can exhibit a wide range of band gap energies depending on the composition ratio of Group III elements. Therefore, controlling the composition ratio of elements such as Al, Ga, and In allows for the generation of light of various wavelengths.

[0005] A multiple quantum well structure (MQW) can be used as the structure of the active layer, and the emission wavelength of the light-emitting element can be determined depending on the composition ratio of the nitride semiconductor in the well layer of the multiple quantum well structure.

[0006] Typically, light-emitting diodes can be used in the form of light-emitting diode packages in which light-emitting diode chips are mounted on a substrate such as a printed circuit board (PCB) that includes a wiring layer and an insulating layer.

[0007] By mounting a red (R) light-emitting diode chip, a green (G) light-emitting diode chip, and a blue (B) light-emitting diode chip on a single substrate, the lights emitted from each light-emitting diode chip can be mixed to emit white light, and a display device can be implemented by configuring the red (R), green (G), and blue (B) light-emitting diode chips into one pixel.

[0008] Light is created by mixing the three primary colors of red, green, and blue, and various colors can be created by combining the three primary colors of RGB.

[0009] The CIE L*a*b color space is a color space created by nonlinearly transforming the CIE XYZ color space based on the antagonism theory of human vision. The L*a*b color space was defined based on research on human vision, and luminance (L) is designed to correspond to the brightness perceived by humans. A luminance (L) of 0 represents black, and a luminance (L) of 100 represents white. In a display system, luminance (L) can be composed by taking RGB signals in a ratio of 3:6:1, respectively. Technology development is required to enable more vivid colors to be accurately displayed in display devices that combine red (R), green (G), and blue (B) light.

[0010] The purpose of the present invention is to provide a light-emitting element having easy semiconductor layer growth and improved light extraction efficiency, and a light-emitting device including the same.

[0011] The purpose of the present invention is to provide a light-emitting element capable of improving color clarity and a light-emitting device including the same.

[0012] A light emitting device (100) according to one embodiment of the present invention includes a substrate (110), a plurality of protrusions (P) protruding from one surface of the substrate (110), and a light emitting structure (120) disposed on the substrate (110).

[0013] In one embodiment of the present invention, when the pitch between adjacent protrusions (P) is D1 and the length of the short side of the light emitting element (100) on a plane is A, A = α D1, and α can be 5 or greater.

[0014] A light-emitting device (1000) according to one embodiment of the present invention includes a light-emitting element (100) including a substrate (110), a plurality of protrusions (P) protruding from one surface of the substrate (110), and a light-emitting structure (120) disposed on the substrate (110), and a circuit board (1010) on which the light-emitting element (100) is mounted.

[0015] In one embodiment of the present invention, the light-emitting element (100) is further provided with a light-emitting portion (800), wherein the maximum width of the protrusion (P) is D2, the vertical height from one surface of the substrate (110) to the vertex (Q) of the protrusion (P) is D3, the maximum width in the horizontal direction of the light-emitting portion (800) is S1, and the vertical height from the upper surface of the circuit board (1010) to the vertex (N) of the light-emitting portion (800) is S2. It could be.

[0016] In one embodiment of the present invention, a molding part (900) covering the light-emitting element (100) is further included, and when the vertical height from one surface of the substrate (110) to the vertex (Q) of the protrusion (P) is D3, and the vertical height from the upper surface of the light-emitting element (100) to the upper surface of the molding part (900) is L, L may have a value 50 times or more greater than D3.

[0017] A light-emitting device (1000) according to one embodiment of the present invention includes a substrate (110), a first light-emitting element (200) disposed on one surface of the substrate (110) and generating light having a first peak wavelength, a second light-emitting element (300) disposed on one surface of the substrate (110) and generating light having a second peak wavelength different from the first peak wavelength, and a third light-emitting element (400) disposed on one surface of the substrate (110) and generating light having a third peak wavelength different from the first and second peak wavelengths.

[0018] In one embodiment, the first to third light-emitting elements (200, 300, 400) may each include a first conductive semiconductor layer (222, 322, 422), an active layer (224, 324, 424) of a multi-quantum well structure, and a second conductive semiconductor layer (226, 326, 426).

[0019] In one embodiment, the number of pairs of the barrier layer and the well layer constituting the active layer (224) of the first light-emitting element (200) may be different from the number of pairs of the barrier layer and the well layer constituting the active layer (324) of the second light-emitting element (300).

[0020] The present invention can provide a light-emitting module capable of improving color clarity and a display device including the same.

[0021] FIG. 1 is a cross-sectional view showing a light-emitting device according to one embodiment of the present invention.

[0022] Figure 2 is an enlarged view showing a part of the configuration of Figure 1.

[0023] Figure 3 is a plan view showing a part of the configuration of Figure 1.

[0024] Figures 4 and 5 are modified examples of Figure 2.

[0025] FIG. 6 is a drawing showing examples of light-emitting devices including light-emitting elements according to one embodiment of the present invention.

[0026] FIG. 7a and FIG. 7b are cross-sectional views illustrating a light emitting device according to one embodiment of the present invention.

[0027] Fig. 8 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.

[0028] Fig. 9 is a modified example of Fig. 8.

[0029] Fig. 10 is a plan view showing a light emitting device according to another embodiment of the present invention.

[0030] Fig. 11 is a drawing showing a light emitting element constituting the light emitting device of Fig. 10.

[0031] Fig. 12 is a side view illustrating three light-emitting elements constituting one pixel in the light-emitting device of Fig. 10.

[0032] Fig. 13 is a drawing showing a modified example of the light emitting element of Fig. 12.

[0033] Fig. 14 is an enlarged view showing a cross-section of a first light-emitting element that generates light having a first peak wavelength.

[0034] Figure 15 is an enlarged view of E of Figure 14.

[0035] Figure 16 is an enlarged view of F in Figure 15.

[0036] Figure 17 is an enlarged view of G in Figure 15.

[0037] Figure 18 is an enlarged view showing a cross-section of a second light-emitting element that generates light having a second peak wavelength.

[0038] Figure 19 is an enlarged view of E' of Figure 18.

[0039] Figure 20 is an enlarged view of F' of Figure 19.

[0040] Figure 21 is an enlarged view of G' of Figure 19.

[0041] Figure 22 is a cross-sectional view showing a V-pit formed in a light-emitting element.

[0042] In the following description, for purposes of explanation, numerous specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, the terms "embodiment" and "implementation" are interchangeable to refer to non-limiting examples of devices or methods that utilize one or more of the inventive concepts disclosed herein. However, it will be apparent that various embodiments may be practiced without utilizing these specific details or using one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, while the various embodiments may vary from one another, they are not necessarily exclusive. For example, specific features, configurations, and characteristics of an embodiment may be utilized or implemented in other embodiments without departing from the scope of the inventive concepts.

[0043] Unless otherwise specified, the illustrated embodiments should be understood to provide exemplary features of varying details of some ways in which the concepts of the present invention may be practically implemented. Therefore, unless otherwise specified, the features, components, modules, layers, membranes, panels, regions, and / or aspects (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be differently combined, separated, interchanged, and / or rearranged without departing from the scope of the concepts of the present invention.

[0044] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading, unless expressly stated, does not imply or indicate any preference or requirement for any particular material, material properties, dimensions, proportions, commonality between the illustrated elements, and / or any other features, properties, or characteristics of the elements. Furthermore, in the accompanying drawings, the dimensions and relative sizes of elements may be exaggerated for clarity and / or illustrative purposes. When embodiments are implemented differently, certain process sequences may be performed differently from the illustrated sequence. For example, two consecutively illustrated processes may be performed substantially simultaneously or in a reverse order from the illustrated sequence. Furthermore, like reference numerals designate like elements.

[0045] When an element, such as a layer, is referred to as being "on," "connected to," or "joined to" another element or layer, the element may be directly on, connected to, or joined to the other element or layer, or there may be intervening elements or layers present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly joined to" another element or layer, there are no intervening elements or layers present. For this purpose, the term "connected" may refer to physical, electrical, and / or fluidic connections, with or without intervening elements. Furthermore, the DR1-axis, DR2-axis, and DR3-axis are not limited to the three axes of a Cartesian coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the DR1-axis, DR2-axis, and DR3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. For purposes of this disclosure, “one or more of X, Y or Z” and “one or more selected from the group consisting of X, Y or Z” may be interpreted as only X, only Y, only Z or any combination of two or more of X, Y and Z, such as, for example, XYZ, XYY, YZ and ZZ. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.

[0046] Although the terms "first," "second," and the like may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be referred to as the second element without departing from the teachings of the present disclosure.

[0047] Spatially relative terms such as "beneath," "beneath," "directly beneath," "lower," "above," "upper," "above," "higher than," "side" (as in, for example, a "side wall"), and the like may be used for descriptive purposes and thereby to describe the relationship of one element to other element(s) as depicted in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the drawings. For example, if the device in the drawings were turned over, an element described as "beneath" or "beneath" another element or feature would then be oriented "above" the other element or feature. Therefore, the exemplary term "beneath" can encompass both orientations above and below. Furthermore, the device can be oriented differently (e.g., rotated 90° or oriented in other orientations), and thus the spatially relative descriptors used herein can also be interpreted accordingly.

[0048] The terminology used herein is for the purpose of describing particular embodiments and is not limiting. The singular forms "a," "an," and "the" as used herein also include the plural forms unless the context clearly dictates otherwise. Furthermore, the terms "comprises," "comprising," "includes," and / or "comprising" as used herein specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms "substantially," "about," and other similar terms as used herein are used as terms of approximation rather than degrees, and as such, are used to describe inherent deviations from measured, calculated, and / or provided values ​​that would be recognized by one of ordinary skill in the art.

[0049] Various embodiments are described below with reference to cross-sectional and / or exploded illustrations, which are schematic illustrations of idealized embodiments and / or intermediate structures. As such, variations from the shapes of the illustrated drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the shapes of specific illustrated regions, but should be construed to include, for example, deviations in shape resulting from manufacturing. In this way, the regions depicted in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of regions of the device, and as such, are not necessarily intended to have a limiting meaning.

[0050] As is conventional in the art, some embodiments may be illustrated and described in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will appreciate that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, wiring circuits, memory elements, and wiring connections formed using semiconductor-based or other manufacturing techniques. When the blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and optionally, may be driven by firmware and / or software. Furthermore, each block, unit, and / or module may be implemented by dedicated hardware, or by a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed processors and associated circuitry) for performing other functions. Additionally, the blocks, units, and / or modules of some embodiments may be physically separated into two or more interacting and individual blocks, units, and / or modules without departing from the scope of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of the present invention.

[0051] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries, such as terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealistic or overly formal sense unless explicitly defined herein.

[0052] The present invention provides a light-emitting element (100) including a light-emitting structure (120) and a light-emitting device (1000) including the light-emitting element (100). Hereinafter, a preferred embodiment of the present invention will be described in more detail with reference to the attached drawings.

[0053] The above light-emitting element (100) is a light-emitting diode chip that generates light, and may include the substrate (110) and a light-emitting structure (120) disposed on the substrate (110).

[0054] Figure 1 illustrates a light emitting device (100) according to a first embodiment of the present invention.

[0055] Specifically, the light-emitting element (100) may include a substrate (110) and a light-emitting structure (120) disposed on the substrate (110).

[0056] The above substrate (110) is a substrate on which a semiconductor layer described later is to be placed, and is not limited to a substrate on which a nitride-based semiconductor can be placed.

[0057] For example, the substrate (110) may include a heterogeneous substrate such as a sapphire substrate, a gallium arsenide substrate, a silicon substrate, a silicon carbide substrate, or a spinel substrate, and may also include a homogeneous substrate such as a gallium nitride substrate, an aluminum nitride substrate, or the like. The substrate (110) may be a growth substrate on which a semiconductor layer is grown.

[0058] The above light-emitting structure (120) is a semiconductor layer disposed on a substrate (110), and may include a first conductive semiconductor layer (122), an active layer (124), and a second conductive semiconductor layer (126).

[0059] The first conductive semiconductor layer (122) may be a semiconductor layer disposed on one surface of the substrate (110), and a buffer layer (not shown) may be additionally disposed between the first conductive semiconductor layer (122) and the substrate (110). The buffer layer may include a nitride or phosphide semiconductor such as GaN or GaAs, and may be grown using MOCVD.

[0060] The above buffer layer can improve the crystallinity of semiconductor layers placed on a substrate (110) in a subsequent process, and can also serve as a seed layer on which nitride-based semiconductor layers can be grown on a heterogeneous substrate.

[0061] The first conductive semiconductor layer (122) may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be disposed on the substrate (110) using a method such as MOCVD, MBE, HVPE, etc. In addition, the first conductive semiconductor layer (122) may be doped to be n-type by including one or more impurities such as Si, C, Ge, Sn, Te, Pb, etc. However, the present invention is not limited thereto, and the first conductive semiconductor layer (122) may be doped to be of the opposite conductive type by including a p-type dopant.

[0062] In addition, further, the first conductive semiconductor layer (122) may be formed of a single layer or multiple layers. For example, the first conductive semiconductor layer (122) may be formed of a first sub-conductive semiconductor layer and a second sub-conductive semiconductor layer on top of the first sub-conductive semiconductor layer.

[0063] The first sub-conductivity semiconductor layer and the second sub-conductivity semiconductor layer may be doped at different concentrations and formed at different process temperatures. When the first conductive semiconductor layer (122) is formed of multiple layers, the first conductive semiconductor layer (122) may include a superlattice layer.

[0064] Furthermore, the first conductive semiconductor layer (122) may additionally include a contact layer, a modulation doping layer, an electron injection layer, etc.

[0065] The above active layer (124) is a light-emitting layer formed on top of the first conductive semiconductor layer (122), and may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown on the first conductive semiconductor layer (122) using a technique such as MOCVD, MBE, or HVPE.

[0066] Additionally, the active layer (124) may include a quantum well structure (QW) including at least two barrier layers and at least one well layer, and further may include a multiple quantum well structure (MQW) including a plurality of barrier layers and a plurality of well layers.

[0067] The wavelength of light emitted from the above active layer (124) can be controlled by controlling the composition ratio of the material constituting the well layer. In this case, the well layer may commonly include the same element and may include In.

[0068] The above well layer is located between the barrier layers, and the band gap energy of the well layer is smaller than the band gap energy of the barrier layer.

[0069] The above well layer is In x Ga (1-x) N or In x Ga (1-x) P (0<x<1) can be included or formed by this, and the wavelength of the light emitted can be controlled depending on the composition ratio (x) of In.

[0070] The above barrier layers and well layers are alternately laminated, and it is preferable that they are alternately laminated at least twice. Adjacent barrier layers and well layers can form a pair.

[0071] The above second conductive semiconductor layer (126) may be a semiconductor layer formed on the active layer (124).

[0072] The second conductive semiconductor layer (126) may include a phosphide-based or nitride-based semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown using a technique such as MOCVD, MBE, or HVPE. The second conductive semiconductor layer (126) may be doped with a conductive type opposite to that of the first conductive semiconductor layer (122). For example, the second conductive semiconductor layer (126) may be doped to be p-type by including an impurity such as Mg.

[0073] The above second conductive semiconductor layer (126) may be formed as a single layer having the same composition as p-GaN, but is not limited thereto, and may further include an AlGaN layer therein.

[0074] In addition, an electron blocking layer having a relatively large band gap may be further included between the second conductive semiconductor layer (126) and the active layer (124). The electron blocking layer is positioned on the active layer (124) and can prevent electrons from overflowing from the active layer (124) to the upper portion thereof, i.e., the second conductive semiconductor layer (126).

[0075] The electron blocking layer may be formed on top of the uppermost last barrier layer of the active layer (124). The average band gap energy of the electron blocking layer may be greater than the average band gap energy of the uppermost last barrier layer, and accordingly, electrons may be blocked from moving toward the second conductive semiconductor layer (126) by the energy barrier of the electron blocking layer.

[0076] In addition, the light emitting element (100) may be configured to include an insulating layer (125) that covers the first conductive semiconductor layer (122) and the second conductive semiconductor layer (126) and forms an opening in which N and P electrode pads (127, 129) are arranged.

[0077] The above two electrode pads (127, 129) can be electrically connected to the first conductive semiconductor layer (122) and the second conductive semiconductor layer (126), respectively, through the openings in the insulating layer (125). However, the structure of the light-emitting element (100) of the present embodiment is not limited thereto, and the N, P electrode pads (127, 129) can be directly soldered to the circuit board without a connecting electrode.

[0078] For example, the light emitting element (100) may be a diode that emits blue light (B), and may be a blue light emitting diode having a peak wavelength within a blue wavelength range. The difference between the peak wavelength and the dominant wavelength of the blue light emitting diode may be between 2 nm and 15 nm. Specifically, the blue light emitting diode may have a peak wavelength between 430 nm and 475 nm, and a dominant wavelength between 460 nm and 480 nm. The peak wavelength of the blue light emitting diode may be a wavelength shorter than the dominant wavelength.

[0079] As another example, the light emitting element (100) may be a diode that emits green light (G), and may be a green light emitting diode having a peak wavelength within a green wavelength range, and the difference between the peak wavelength and the dominant wavelength of the green light emitting diode may be between 5 and 20 nm. Specifically, the green light emitting diode may have a peak wavelength between 510 nm and 540 nm, and may have a dominant wavelength between 525 nm and 545 nm. The peak wavelength of the green light emitting diode may be a wavelength shorter than the dominant wavelength.

[0080] As another example, the light emitting element (100) may be a diode that emits red light (R), and may be a red light emitting diode having a peak wavelength within a red wavelength range, and the difference between the peak wavelength and the dominant wavelength of the red light emitting diode may be between 5 and 30 nm. Specifically, the red light emitting diode may have a peak wavelength between 620 nm and 640 nm, and may have a dominant wavelength between 600 nm and 630 nm. The peak wavelength of the red light emitting diode may be a wavelength longer than the dominant wavelength.

[0081] It is obvious that the light-emitting element (100) described above can be implemented by being transformed into various structures, and can be transformed into various structures such as a flip-chip type, a vertical type, and a horizontal type.

[0082] Meanwhile, referring to FIG. 22, V-pits may be formed in the growth process of each layer of the light-emitting element (100).

[0083] A plurality of light-emitting elements (100) each emitting blue light, green light, and red light can be arranged horizontally along one direction to form one pixel (PX).

[0084] Alternatively, the light emitting element (100) may be a stacked light emitting diode in which a plurality of light emitting structures (120) are stacked and arranged. The stacked light emitting diode may include a first light emitting structure, a second light emitting structure, and a third light emitting structure that are sequentially stacked. The second light emitting structure may be arranged on the first light emitting structure, and the third light emitting structure may be sequentially stacked on the second light emitting structure. Each of the first to third light emitting structures may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer described above.

[0085] The first to third light-emitting structures may be a light-emitting structure that emits red light, a light-emitting structure that emits green light, and a light-emitting structure that emits blue light, respectively. Accordingly, a stacked light-emitting element (100) including the first to third light-emitting structures may constitute one pixel (PX) that displays the RGB primary colors.

[0086] Meanwhile, the light emitting element (100) may have a long side and a short side on a plane. When the length of the short side of the light emitting element (100) is A and the length of the long side is B, A may have a value in the range of 5 μm to 400 μm, and B may have a value in the range of 400 μm to 650 μm.

[0087] In addition, the light emitting element (100) may include a plurality of protrusions (P) protruding from one surface of the substrate (110). The protrusions (P) may be formed by patterning on one surface of the substrate (110).

[0088] That is, the plurality of protrusions (P) may be formed to protrude upward as a protrusion pattern protruding from one surface of the substrate (110).

[0089] The pitch (peak-to-peak) between adjacent protrusions (P) can be defined as D1, the maximum width of the protrusions (P) can be defined as D2, the vertical height from one surface of the substrate (110) to the apex (Q) of the protrusions (P) can be defined as D3, and the separation distance between adjacent protrusions (P) can be defined as D4.

[0090] The above D1 may have a value in the range of 1.7 μm to 2.2 μm.

[0091] The above D2 may have a value in the range of 1.5 μm to 2 μm. In this case, D1 may have a value greater than D2. For example, the above D1 may have a value in the range of 1 to 1.5 times the above D2. Preferably, the above D1 may have a value in the range of 1 to 1.2 times the above D2.

[0092] The above D3 may have a value in the range of 0.8 μm to 1.2 μm. The above D3 may have a value smaller than the above D1. For example, the above D1 may have a value in the range of 1 to 3 times the above D3. Preferably, the above D1 may have a value in the range of 1.6 to 2.2 times the above. In addition, the above D2 may have a value in the range of 1 to 3 times the above D3. Preferably, the above D2 may have a value in the range of 1.5 to 2.5 times the above.

[0093] The above D4 may have a value in the range of 0 μm to 0.7 μm, and preferably may have a value in the range of 0.1 μm to 0.3 μm.

[0094] The plurality of protrusions (P) may each have a slightly different shape, and each of D1 to D4 may also have a different value.

[0095] In FIGS. 1 and 2, the protrusion (P) is depicted as a cone or polyhedron whose horizontal width narrows toward the top. However, if it protrudes from one surface of the substrate (110), various shapes are possible. For example, as shown in FIG. 5, the side surface of the protrusion (P) may be formed in a convex bell shape. The protrusion (P) may be formed in an overall triangular shape in a cross-section perpendicular to the substrate (110), but is not limited thereto.

[0096] The length A of the short side of the above light-emitting element (100) on the plane can satisfy the relationship shown in the following equation (1).

[0097] A = α D1, α is 5 or more formula (1)

[0098] For example, if the above D1 is 1.9 μm, the above A may have a length of 9.5 μm or more. In addition, the above α may be 5 or more and 140 or less. α may be a real number.

[0099] In addition, the length A of the short side of the light emitting element (100) on the plane can satisfy the relationship as shown in the following equation (2).

[0100] A = β D2, β is greater than or equal to α, equation (2)

[0101] For example, if the above D2 is 1.7 μm, the above A may have a length of 8.5 μm or more. In addition, the above β may be 5 or more and 155 or less. β may be a real number.

[0102] In addition, the length A of the short side of the light emitting element (100) on the plane can satisfy the relationship shown in the following equation (3).

[0103] A = γ D3, γ is greater than or equal to 2α Equation (3)

[0104] For example, if the above D3 is 1 μm, the above A may have a length of 10 μm or more. In addition, the above γ may be 10 or more and 230 or less. γ may be a real number.

[0105] Therefore, the length of the light-emitting element (100) can be designed by considering the diameter of the protrusion (P) to maintain the optimal ratio between the protrusion (P) and the light-emitting element (100).

[0106] Referring back to FIG. 1, the height (K2) from the vertex (Q) of the protrusion (P) to the upper surface of the light-emitting structure (120) may have a value in the range of 0.7 to 0.9 times the height (K1) from one surface of the substrate (110) to the upper surface of the light-emitting structure (120). Here, the upper surface of the light-emitting structure (120) may be a light-emitting surface or one surface of the second conductive semiconductor layer (126). Therefore, the height or thickness of the light-emitting structure (120) may be designed in consideration of the height of the protrusion (P), thereby maintaining an optimal ratio between the protrusion (P) and the light-emitting structure (120).

[0107] Next, referring to FIG. 3, the plurality of protrusions (P) can be distributed in various patterns on a plane on one surface of the substrate (110).

[0108] For example, the plurality of protrusions (P) may be arranged in a square grid pattern or distributed in a hexagonal grid pattern as shown in Fig. 3. The diameter of each protrusion (P) and the spacing between the protrusions (P) may have a certain range of error.

[0109] The total area occupied by the above protrusions (P) may be 60% or more and 90% or less of the total area of ​​one side of the substrate (110).

[0110] The above protrusion (P) is 1 mm 2 It can be formed in a number of more than 200,000 per area. The above protrusion (P) is 1 mm 2 It can be formed in numbers of 200,000 or more and 280,000 or less per area.

[0111] In the case of Fig. 3, an example is shown in which the plurality of protrusions (P) are arranged in a regular pattern, but the present invention is not limited thereto.

[0112] Meanwhile, FIGS. 1 and 2 illustrate an example in which the protrusion (P1) is formed integrally with the substrate (110), but, unlike this, as illustrated in FIG. 4, the protrusion (P) may include a first protrusion (P1) formed integrally with the substrate (110) and a second protrusion (P2) disposed on the first protrusion (P1).

[0113] The first protrusion (P1) is a layer formed integrally with the substrate (110) and may be made of the same material as the substrate (110). The upper surface of the first protrusion (P1) may be circular.

[0114] The second protrusion (P2) may be made of a different material from the first protrusion (P1). The refractive index of the second protrusion (P2) may be different from the refractive index of the first protrusion (P1). The boundary surface (BD) between the first protrusion (P1) and the second protrusion (P2) may be flat or may have a plurality of protrusions formed thereon.

[0115] The vertical height (D32) of the second protrusion (P2) may be greater than the vertical height (D31) of the first protrusion (P1). In addition, the side slope at the boundary (BD) between the first protrusion (P1) and the second protrusion (P2) may be variable. By varying the side slopes of the first protrusion (P1) and the second protrusion (P2), the scattering degree of the emitted light may be increased, and the light emission efficiency may be improved.

[0116] A light-emitting device (1000) according to the present invention may include at least one light-emitting element (100). The light-emitting device (1000) may be a light-emitting module, a display module, or a display device. The light-emitting module may be a light-emitting diode package including at least one light-emitting element (100). A plurality of display modules may be provided to configure one display device.

[0117] For example, the light emitting device (1000) may be applied to a display panel, and the display panel may be applied to a signage, a display device, or a vehicle. Specifically, the light emitting device (1000) may be applied to various devices, such as a smart watch (1000a), a VR headset (1000b), an AR device such as an augmented reality glasses (1000c), and a signage, as illustrated in FIG. 6. Specifically, the light emitting device (1000) may be applied to a display of a vehicle (1000d) and configured to implement icons such as strings (English, numbers, Korean, etc.) or pictures. To implement this, the light emitting device (1000) may be networked with an external source, wherein the external source may be an application or a system setting installed in the vehicle.

[0118] In addition, the above light-emitting device (1000) is a display module, and by arranging the sides of a plurality of display modules in contact with each other, display screens of various sizes can be implemented.

[0119] As an example, FIGS. 7A and 7B illustrate an example of a light-emitting device (1000) including a light-emitting element (100) according to the present invention. The light-emitting device (1000) may be a light-emitting diode package including the light-emitting element (100).

[0120] The above light-emitting device (1000) may include the light-emitting element (100), a circuit board (1010) on which the light-emitting element (100) is mounted, and a light-emitting portion (800) disposed above the light-emitting element (100).

[0121] Since the above light emitting element (100) can be configured identically or similarly to that described in FIGS. 1 to 5, a detailed description thereof will be omitted.

[0122] The circuit board (1010) above is a board on which the light-emitting element (100) is mounted and can have various configurations. The circuit board (1010) is a board on which at least one light-emitting element (100) is mounted on the upper surface, and is not limited to a specific type as long as it can support the light-emitting element (100), such as a circuit board, a lead frame, a flexible substrate, a transparent substrate, etc.

[0123] For example, the circuit board (1010) may be composed of a PCB (Printed Circuit Board). The PCB may be, for example, an FR4 PCB having excellent properties such as high strength, flame retardancy, and chemical resistance. Alternatively, it may be a Metal PCB (Metal Printed Circuit Board) having excellent heat dissipation performance and good thermal conductivity. More specifically, it may be a PCB including Cu, Zn, Au, Ni, Al, Mg, Cd, Be, W, Mo, Si, and Fe or an alloy of at least one of these as a base metal. However, the present invention is not limited thereto, and various PCBs may be used depending on the product characteristics.

[0124] The above circuit board (1010) has an insulating layer and wiring for electrical connection with the light-emitting element (100), and may include circuits for supplying and driving an electrical source such as current or voltage to the light-emitting element (100).

[0125] A pad for mounting at least one light-emitting element (100) may be formed on the upper surface of the circuit board (1010), and a pad for mounting on another substrate (not shown, for example, a display substrate) may also be formed on the lower surface of the board (1010).

[0126] The above circuit board (1010) can be formed in a single-layer or multi-layer structure, and can be formed in various thicknesses as needed.

[0127] The above light-emitting portion (800) can transmit light emitted from the light-emitting element (100), and can additionally adjust the beam angle by changing the path of the light emitted from the light-emitting element (100).

[0128] A reflective film (500) may be positioned on the upper surface of the circuit board (1010), and an opening may be formed in the reflective film (500) to expose an area where the light-emitting element (100) is mounted. The light-emitting element (100) mounted within the opening may be covered by a light-transmitting portion (800).

[0129] The above reflective film (500) may have a convex portion protruding upward along the perimeter of the opening. The height of the reflective film (500) in the convex portion may be positioned higher than the upper surface of the light-emitting element (100). Light emitted from the light-emitting element (100) may pass through the light-transmitting portion (800) and be reflected on the side surface of the convex portion of the reflective film (500), thereby improving light extraction efficiency.

[0130] The above light-emitting portion (800) may have an inner recessed portion where the light-emitting element (100) is positioned and may have a convex surface through which light is emitted.

[0131] The above-mentioned light-emitting portion (800) is formed in a bell shape and has a convex shape at the apex (N). The light-emitting portion (800) may have a concave shape on the side surface in the area where it comes into contact with the lower circuit board (1010), thereby forming an inflection point (fl). Accordingly, the number of inflection points (fl) provided on the emission surface of the light-emitting portion (800) may be greater than the number of inflection points (fp) of the protrusion (P).

[0132] In addition, when the maximum horizontal width of the light-emitting portion (800) is S1 and the vertical height from the upper surface of the circuit board (1010) to the vertex (N) of the light-emitting portion (800) is S2, the relationship of the following equation (4) can be established.

[0133] Formula (4)

[0134] That is, the width (S1) compared to the height (S2) of the light-emitting portion (800) may be greater than the width (D2) compared to the height (D3) of the protrusion (P).

[0135] Above is above It can have a value in the range of 1.5 to 3 times.

[0136] Additionally, the height (S2) of the light-emitting portion (800) may have a value in the range of 800 to 1200 times the height (D3) of the protrusion (P).

[0137] As another example, FIG. 8 is another example of a light-emitting device (1000) including a light-emitting element (100) of the present invention, and illustrates a cross-section of the light-emitting device (1000). The light-emitting device (1000) may be a display module or a display device.

[0138] The above light-emitting device (1000) may include at least one light-emitting element (100), a circuit board (1010) on which the light-emitting element (100) is mounted, and a molding part (900) covering the light-emitting element (100).

[0139] The above light emitting element (100) may be configured identically or similarly to that described in FIGS. 1 to 5, and thus a detailed description thereof will be omitted. The circuit board (1010) may be configured identically or similarly to that described in FIGS. 7a and 7b, and thus a detailed description thereof will be omitted.

[0140] On the upper surface of the circuit board (1010), a plurality of light-emitting elements (100) may be arranged in various patterns. For example, three light-emitting elements (100) each emitting red (R), green (G), and blue (B) light may be arranged in a row along one direction to form one pixel (PX). Alternatively, it is also possible to form one pixel (PX) by vertically stacking R, G, and B light-emitting diodes on one light-emitting element (100).

[0141] The present invention is not limited to the three light emitting elements (100) constituting one pixel (PX) being arranged in a row, and it is also possible to arrange the light emitting elements (100) on a plane so as to be offset from the row.

[0142] The molding part (900) can be configured in various ways as a molding layer covering the light emitting element (100). The molding part (900) can cover both the upper surface and the side surface of the light emitting element (100). The molding part (900) can encapsulate a plurality of light emitting elements (100) and can also function as a refractive layer that refracts light emitted therefrom. The molding part (900) can be configured as a single layer or a plurality of layers, and can also be a transparent molding having light transmission properties for transmitting light emitted from the light emitting element (100).

[0143] Meanwhile, the molding part (900) may be formed of a resin including, for example, one or more of acrylate, silicone, epoxy, PMMA (Polymethyl methacrylate), and PS (Polystyrene) series, but is not limited thereto. In addition, the molding part (900) may be formed of a fluororesin to improve the light extraction efficiency emitted from the light emitting element (100).

[0144] For example, the molding portion (900) may be formed by applying a sheet-type molding agent, liquefying it through high-temperature treatment, and pressing the molding agent toward the light-emitting element (100). In addition, the molding portion (900) may be a layer formed by curing a resin through UV treatment.

[0145] The thermosetting resin includes polymers that do not undergo crosslinking reactions due to heat, and when heat is applied, the kinetic energy of the polymers increases, allowing them to become fluid or soft. Therefore, after applying a molding agent to the light-emitting element (100), a mold can be formed by pressing the molding agent toward the light-emitting element (100) at a high temperature to fill the periphery of the light-emitting element (100).

[0146] Additionally, the molding portion (900) may be a light-transmitting layer formed of a material that allows light to pass through. The light transmittance of the molding portion (900) may be 50% or more, preferably 70% or more. In this case, the light blocking rate of the molding portion (900) may be 40% or less.

[0147] As another example, the molding portion (900) may further include a light-reflecting material or a light-absorbing material. In this case, the molding portion (900) may be an opaque layer and may include a black pigment to adjust the contrast of the display. Furthermore, the molding portion (900) may also include a matrix containing a light-scattering material, such as silica.

[0148] As another example, the molding portion (900) can perform both a light-blocking function and a light-reflecting function. For example, the molding portion (900) can be formed using a carbon black molding agent or a molding agent combining black and white.

[0149] As another example, the molding portion (900) may further include a light-absorbing function in addition to its light-reflecting function. For example, the molding portion (900) may be formed of a white molding agent or a molding agent combining white and black. Accordingly, the contrast of the light emitted through the molding portion (900) can be adjusted, and the brightness of the display can be improved.

[0150] As another example, the molding part (900) may further include a light diffusing material capable of diffusing light emitted from a plurality of light emitting elements (100). For example, the light diffusing material may include one or more of TiO2, BaO, SiO2, and MgO, Y2O3 capable of scattering light, and this may be distributed inside the molding part (900).

[0151] The thickness of the above molding portion (900) can be configured in various ways.

[0152] In the case of Fig. 8, an example in which the molding part (900) is formed as a single layer is illustrated, but the embodiment of the present invention is not limited thereto, and a plurality of molding layers (910, 920) may be formed by stacking them as shown in Fig. 8, and each layer may perform a light control function such as light reflection, light absorption, light blocking, and light diffusion.

[0153] When the molding part (900) includes a plurality of molding layers (910, 920), the molding part (900) may include a first molding layer (910) that covers the side surface of the light emitting element (100) between the light emitting elements (100), and a second molding layer (920) that is disposed on top of the first molding layer (920) and covers the first molding layer (910) and the upper surface of the light emitting element (100).

[0154] The upper surface of the first molding layer (910) between neighboring light-emitting elements (100) can form a concave surface.

[0155] Meanwhile, the light emitting device (1000) may further include a film layer (600) disposed on the upper portion of the molding portion (900). At least one of the refractive index, melting point, and light transmittance of the film layer (600) may be different from the refractive index, melting point, and light transmittance of the molding portion (900).

[0156] The above film layer (600) is a layer that controls light emitted from the upper portion of the molding part (900) and can be configured in various ways. As illustrated in FIG. 9, an adhesive layer (700) for attaching the film layer (600) may be further provided between the molding part (900) and the film layer (600). For example, the film layer (600) may be an anti-glare layer capable of preventing glare.

[0157] The above film layer (600) may be a film layer formed through matte treatment. For example, the film layer (600) may be a matte film layer with a surface treatment of a matte film attached to the upper portion of the molding part (900).

[0158] Alternatively, the film layer (600) may be formed, for example, by attaching an AG (Anti-Glare) film or coating with an AG (Anti-Glare) coating solution.

[0159] The thickness of the above film layer (600) can be formed very thinly compared to the thickness of the molding part (900). The present invention is not limited thereto, and can have various thicknesses depending on the thickness of the film attached to the upper surface of the molding part (900), and it goes without saying that films of various thicknesses can be selectively attached.

[0160] The light emitting devices (1000) of FIGS. 8 and 9 are provided in multiple numbers and arranged adjacently to form display panels of various sizes.

[0161] Meanwhile, when the vertical height from one surface of the substrate (110) to the apex (Q) of the protrusion (P) is D3, and the vertical height from the upper surface of the light-emitting element (100) to the upper surface of the molding part (900) is L, L may have a value 50 times or more greater than D3.

[0162] In addition, when the pitch between adjacent protrusions (P) is D1 and the maximum width of the protrusions (P) is D2, L can satisfy the relationship of the following equation (5).

[0163] Formula (5)

[0164] The present invention limits the numerical range of the specifications (long and short side lengths, height) of the light-emitting element (100), the specifications (width, height) of the light-transmitting portion (800), and the thickness of the molding portion (900) according to the spacing (D1), width (D2), and height (H3) of the protrusions (P) provided on one surface of the substrate (110), thereby enabling smooth growth of the semiconductor layer on the substrate (110) while improving the light extraction efficiency by the protrusions (P).

[0165] As another example, FIG. 10 is another example of a light-emitting device (1000) including a light-emitting element (100) of the present invention, and illustrates the upper surface of the light-emitting device (1000). The light-emitting device (1000) may be a display module or a display device.

[0166] The above light-emitting device (1000) may include a circuit board (1010) and a plurality of light-emitting elements (200, 300, 400) arranged on one surface of the circuit board (1010). The above light-emitting device (1000) may further include a control unit that controls the operation of the plurality of light-emitting elements (200, 300, 400).

[0167] The circuit board (1010) may be configured identically or similarly to that in FIGS. 7A to 9. The circuit board (1010) may be a substrate for mounting light-emitting elements (200, 300, 400) coupled to a separate display substrate, or may include a meaning such as a panel as a display substrate.

[0168] The circuit board (1010) may further include a circuit structure for passive matrix driving or active matrix driving. Specifically, the circuit board (1010) may include wiring and resistors within it, and may also include passive / active components such as transistors and capacitors. In addition, the circuit board (1010) may have pads formed on the upper and lower surfaces to allow electrical connection to the circuits arranged within it.

[0169] The light emitting element (200, 300, 400) may be configured identically or similarly to that described in FIGS. 1 to 5, or may be formed with a different structure. That is, the light emitting element (200, 300, 400) may be formed with a different size, shape, or specification than that described in FIGS. 1 to 5, and the protrusion (P) may be optionally omitted.

[0170] For example, the light-emitting element (200, 300, 400) is a light-emitting diode chip that is arranged on one side of a circuit board (1010) and generates light, and can be configured in various ways.

[0171] The above light-emitting element (200, 300, 400) may include a semiconductor layer formed on a substrate (110).

[0172] The substrate (110) is a substrate on which a semiconductor layer is to be disposed, and is not limited to a substrate on which a nitride-based semiconductor can be disposed. For example, the substrate (110) may include a heterogeneous substrate such as a sapphire substrate, a gallium arsenide substrate, a silicon substrate, a silicon carbide substrate, or a spinel substrate, and may also include a homogeneous substrate such as a gallium nitride substrate or an aluminum nitride substrate. The substrate (110) may be a growth substrate on which a semiconductor layer is grown. Here, the protrusion (P) may not be formed on the substrate (110), and examples in which a protrusion having a size, shape, or pattern different from the protrusion (P) described with reference to FIGS. 1 to 5 is also possible are formed. In addition, the substrate (110) may be removed depending on the shape of the light-emitting element (200, 300, 400).

[0173] Referring to FIG. 10, first to third light-emitting elements (200, 300, 400) arranged in a first direction (Y-axis direction based on FIG. 10) on a plane may be arranged on a circuit board (1010) to form one pixel (PX). The first to third light-emitting elements (200, 300, 400) may be arranged in a horizontal row parallel to each other as shown in FIGS. 10 and 12, and in this case, three light-emitting elements (200, 300, 400) may display RGB primary colors as a pixel (PX). However, this is not necessarily limited thereto, and each light-emitting element (200, 300, 400) of RGB may be arranged to be misaligned in a row.

[0174] The above plurality of pixels (PX, pixels) can be arranged in a grid shape along a first direction (Y-axis direction) and a second direction (X-axis direction) perpendicular thereto on the plane.

[0175] In addition, as shown in FIGS. 10 and 12, not only is the first to third light-emitting elements (200, 300, 400) of RGB arranged horizontally along one direction to form one pixel (PX), but also, as shown in FIG. 13, an example in which the first to third light-emitting elements (200, 300, 400) of RGB are vertically stacked to form one pixel (PX) is also possible.

[0176] Each light emitting element (200, 300, 400) may be a small light emitting element having a size in micro units, and may have a width of 1000 micrometers or less.

[0177] The spacing (M1) between neighboring pixels (PX) based on a second direction (X-axis direction based on FIG. 1) perpendicular to a first direction (Y-axis direction based on FIG. 1) in which the first to third light-emitting elements (200, 300, 400) are arranged within the pixel (PX) may be greater than the width length (M2) of the pixel (PX) based on the second direction.

[0178] A molding layer may be formed on the plurality of light-emitting elements (200, 300, 400).

[0179] The molding layer can cover a plurality of light-emitting elements (200, 300, 400) and can increase light extraction efficiency by including various fillers, light-absorbing materials such as carbon black, light-reflecting materials, etc. The molding layer can function as a kind of buffer layer and can cover not only the light-emitting elements (200, 300, 400) but also the upper surface of the substrate (1010). The substrate (1010) can support the plurality of light-emitting elements (200, 300, 400) and the molding layer.

[0180] The above molding layer may be configured identically or similarly to the molding portion (900) described above.

[0181] Additionally, the molding layer may further include a wavelength conversion material capable of converting the wavelength of light emitted from the plurality of light-emitting diodes (120, 130, 140). For example, the wavelength conversion material may include a fluorescent material capable of emitting one or more of red light, blue light, and green light, and the fluorescent material may be distributed within the molding layer.

[0182] Referring to FIG. 11, the first to third light-emitting elements (200, 300, 400) may each include a first conductive semiconductor layer (222, 322, 422), an active layer of a multi-quantum well structure (224, 324, 424), and a second conductive semiconductor layer (226, 326, 426).

[0183] The above first conductive semiconductor layer (222, 322, 422) may be configured identically or similarly to the first conductive semiconductor layer (122) described in FIGS. 1 to 5, and thus, a detailed description thereof will be omitted to the extent of overlap.

[0184] The above active layers (224, 324, 424) are light-emitting layers formed on top of the first conductive semiconductor layers (222, 322, 422) and may have a multiple quantum well structure (MQW). The above active layers (224, 324, 424) may have the same or similar configuration as the active layer (124) described in FIGS. 1 to 5, and therefore, detailed descriptions thereof will be omitted to the extent of overlap.

[0185] The second conductive semiconductor layer (226, 326, 426) may be a semiconductor layer formed on the active layer (224, 324, 424). The second conductive semiconductor layer (226, 326, 426) may have a configuration identical to or similar to the second conductive semiconductor layer (126) described in FIGS. 1 to 5, and thus, a detailed description thereof will be omitted to the extent of overlap.

[0186] The second conductive semiconductor layer (226, 326, 426) may include a p-type semiconductor layer (226a, 326a, 426a) and an electron blocking layer (226b, 326b, 426b) having a high band gap between the p-type semiconductor layer (226a, 326a, 426a) and the active layer (224, 324, 424).

[0187] The above electron blocking layer (226b, 326b, 426b) is located on the active layer (224, 324, 424) and can prevent electrons from overflowing from the active layer (224, 324, 424) to the upper portion thereof.

[0188] The above electron blocking layer (226b, 326b, 426b) can be formed on the uppermost last barrier layer (224a, 324a, 424a) of the active layer (224, 324, 424).

[0189] The average band gap energy of the electron blocking layer (226b, 326b, 426b) may be greater than the average band gap energy of the uppermost last barrier layer (224a, 324a, 424a), and accordingly, electrons may be blocked from moving toward the second conductive semiconductor layer (226, 326, 426) by the energy barrier of the electron blocking layer (226b, 326b, 426b).

[0190] Meanwhile, the first to third light-emitting elements (200, 300, 400) may be configured to include an insulating layer (225, 325, 425) that covers the first conductive semiconductor layer (222, 322, 422) and the second conductive semiconductor layer (226, 326, 426) and forms an opening in which two electrode pads (227, 229, 327, 329, 427, 429) are arranged. The above two electrode pads (227, 229, 327, 329, 427, 429) can be electrically connected to the first conductive semiconductor layer (222, 322, 422) and the second conductive semiconductor layer (226, 326, 426) through the openings of the insulating layer (225, 325, 425), respectively. However, the structure of the light-emitting element (200, 300, 400) of the present embodiment is not limited thereto.

[0191] Meanwhile, referring to FIG. 22, V-pits (V) may be formed in the growth process of each layer of the first to third light-emitting elements (200, 300, 400).

[0192] The structure of the light emitting element (200, 300, 400) of the above-described FIG. 11 can be processed in various ways, and thus light emitting elements (200, 300, 400) of various structures can be implemented. It is obvious that the light emitting elements (200, 300, 400) can be transformed into various structures, such as a flip-chip type light emitting element, a vertical type light emitting element, and a horizontal type light emitting element.

[0193] Meanwhile, the peak wavelengths of light emitted from the first to third light-emitting elements (200, 300, 400) may be the same or different from each other.

[0194] That is, when the first light-emitting element (200) generates light having a first peak wavelength, the second light-emitting element (300) generates light having a second peak wavelength, and the third light-emitting element (400) generates light having a third peak wavelength, the first to third peak wavelengths may be the same, or at least one of the first to third peak wavelengths may be different from another peak wavelength.

[0195] For example, the first light-emitting element (200) may be a diode that emits blue light (B), and may be a blue light-emitting diode having a peak wavelength within a blue wavelength range. The difference between the peak wavelength and the dominant wavelength of the blue light-emitting diode may be between 2 nm and 15 nm. Specifically, the blue light-emitting diode may have a peak wavelength between 430 nm and 475 nm, and a dominant wavelength between 460 nm and 480 nm. The peak wavelength of the blue light-emitting diode may be a wavelength shorter than the dominant wavelength.

[0196] The second light-emitting element (300) above is a diode that emits green light (G), and may be a green light-emitting diode having a peak wavelength within a green wavelength range. The green light-emitting diode may have a difference between a peak wavelength and a dominant wavelength of 5 to 20 nm. Specifically, the green light-emitting diode may have a peak wavelength between 510 nm and 540 nm, and a dominant wavelength between 525 nm and 545 nm. The peak wavelength of the green light-emitting diode may be a wavelength shorter than the dominant wavelength.

[0197] The third light-emitting element (400) above is a diode that emits red light (R), and may be a red light-emitting diode having a peak wavelength within a red wavelength range. The red light-emitting diode may have a difference between a peak wavelength and a dominant wavelength of 5 to 30 nm. Specifically, the red light-emitting diode may have a peak wavelength between 620 nm and 640 nm, and a dominant wavelength between 600 nm and 630 nm. The peak wavelength of the red light-emitting diode may be a wavelength longer than the dominant wavelength.

[0198] The deviations between the peak wavelength and the dominant wavelength of each of the above light-emitting elements (200, 300, 400) may have different deviation values. For example, the deviation between the peak wavelength and the dominant wavelength of the blue light-emitting element (200) may have a smaller deviation than the deviation between the peak wavelength and the dominant wavelength of the green light-emitting element (300). The deviation between the peak wavelength and the dominant wavelength of the green light-emitting element (300) may have a smaller deviation than the deviation between the peak wavelength and the dominant wavelength of the red light-emitting element (400). In this way, by managing the deviations between the peak wavelength and the dominant wavelength of the blue light-emitting element (200), the green light-emitting element (300), and the red light-emitting element (400), the color purity and visibility of the color implementing the image of the display can be improved.

[0199] Meanwhile, the first peak wavelength and the second peak wavelength may be different from each other, and the number of pairs of the barrier layer (324a) and the well layer (324b) constituting the active layer (324) of the second light-emitting element (300) may be configured differently from the number of pairs of the barrier layer (224a) and the well layer (224b) constituting the active layer (224) of the first light-emitting element (200).

[0200] In other words, the number of barrier layers (324a) and well layers (324b) constituting the active layer (324) of the second light-emitting element (300) may be configured differently from the number of barrier layers (224a) and well layers (224b) constituting the active layer (224) of the first light-emitting element (200). Accordingly, light extraction can be increased by making the average refractive index values ​​of the active layers (224, 324) of each light-emitting element (200, 300) different.

[0201] As an example, the second light-emitting element (300) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), in which case the second light-emitting element (300) may be a light-emitting diode that emits green light and the first light-emitting element (200) may be a light-emitting diode that emits blue light.

[0202] At this time, the number of pairs of the active layer (324) of the second light-emitting element (300) may be less than the number of pairs of the active layer (224) of the first light-emitting element (200). The number of pairs of the active layer (224) of the first light-emitting element (200) may be configured to be more than 1 time and less than 3 times the number of pairs of the active layer (324) of the second light-emitting element (300).

[0203] For example, as illustrated in FIG. 15, the number of pairs of the active layer (224) of the first light-emitting element (200) may be 8, and the number of pairs of the active layer (324) of the second light-emitting element (300) may be less than 8 (for example, the number of pairs may be 5 with reference to FIG. 19).

[0204] Since the number of pairs of the active layer (224) of the first light-emitting element (200) emitting blue light is greater than the number of pairs of the active layer (324) of the second light-emitting element (300) emitting green light, this means that the number of barrier layers (224a) or well layers (224b) constituting the active layer (224) of the first light-emitting element (200) emitting blue light is also greater than that of the second light-emitting element (300) emitting green light.

[0205] The number of barrier layers (224a) or well layers (224b) of the active layer (224) of the first light-emitting element (200) may be configured to be more than 1 time and less than 3 times the number of barrier layers (324a) or well layers (324b) of the active layer (324) of the second light-emitting element (300).

[0206] In addition, the thickness (T52) of at least one barrier layer (324a) constituting the active layer (324) of the second light-emitting element (300) may be configured differently from the thickness (T51) of at least one barrier layer (224a) constituting the active layer (224) of the first light-emitting element (200). Accordingly, the barrier layers (224a, 324a) of adjacent light-emitting elements (200, 300) may act as distributed Bragg reflectors for light emitted from the light-emitting elements (200, 300), thereby increasing light extraction.

[0207] The second light-emitting element (300) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), and at this time, the thickness (T52) of at least one barrier layer (324a) constituting the active layer (324) of the second light-emitting element (300) may be formed to be thicker than the thickness (T51) of at least one barrier layer (224a) constituting the active layer (224) of the first light-emitting element (200).

[0208] The thickness (T51) of at least one barrier layer (224a) constituting the active layer (224) of the first light-emitting element (200) may have a value in the range of 0.8 to 0.95 of the thickness (T52) of at least one barrier layer (324a) constituting the active layer (324) of the second light-emitting element (300).

[0209] In addition, the thickness (T62) of at least one well layer (324b) constituting the active layer (324) of the second light-emitting element (300) may be configured differently from the thickness (T61) of at least one well layer (224b) constituting the active layer (224) of the first light-emitting element (200). Accordingly, the well layers (224b, 324b) of adjacent light-emitting elements (200, 300) may act as distributed Bragg reflectors for light emitted from the light-emitting elements (200, 300), thereby increasing light extraction.

[0210] The second light-emitting element (300) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), and at this time, the thickness (T62) of at least one well layer (324b) constituting the active layer (324) of the second light-emitting element (300) may be formed to be thicker than the thickness (T61) of at least one well layer (224b) constituting the active layer (224) of the first light-emitting element (200).

[0211] The thickness (T61) of at least one well layer (224b) constituting the active layer (224) of the first light-emitting element (200) may have a value in the range of 0.8 to 0.95 of the thickness (T62) of at least one well layer (324b) constituting the active layer (324) of the second light-emitting element (200).

[0212] In addition, the composition of the Group III material of the barrier layer (324a) constituting the active layer (324) of the second light-emitting element (300) may be configured differently from the composition of the Group III material of the barrier layer (224a) constituting the active layer (224) of the first light-emitting element (200). Accordingly, it is possible to have an active layer (224, 324) suitable for extracting light emitted from the corresponding light-emitting element (200, 300) while reducing the influence that may be exerted on the active layer (224, 324) of the adjacent light-emitting element (200, 300).

[0213] In addition, the aluminum content of the barrier layer (324a) constituting the active layer (324) of the second light-emitting element (300) may be configured differently from the aluminum content of the barrier layer (224a) constituting the active layer (224) of the first light-emitting element (200).

[0214] The second light-emitting element (300) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), and at this time, the aluminum content of the barrier layer (324a) constituting the active layer (324) of the second light-emitting element (300) may be less than the aluminum content of the barrier layer (224a) constituting the active layer (224) of the first light-emitting element (200). Accordingly, the average energy bandgap of the barrier layer (324a) of the second light-emitting element (300) may be less than the average energy bandgap of the barrier layer (224a) of the first light-emitting element (200). Here, the average energy bandgap means an average value of the energy bandgaps included in each barrier layer. Alternatively, the sum of the aluminum contents of the plurality of barrier layers (324a) constituting the active layer (324) of the second light-emitting element (300) may be less than the sum of the aluminum contents of the plurality of barrier layers (224a) constituting the active layer (224) of the first light-emitting element (200). In this case, the sum of the aluminum contents may be derived by adding the aluminum contents included in each of the barrier layers.

[0215] In addition, the composition of the group III material of the well layer (324b) constituting the active layer (324) of the second light-emitting element (300) may be configured differently from the composition of the group III material of the well layer (224b) constituting the active layer (224) of the first light-emitting element (200).

[0216] The indium content of the well layer (324b) constituting the active layer (324) of the second light-emitting element (300) may be greater than the indium content of the well layer (224b) constituting the active layer (224) of the first light-emitting element (200). Accordingly, the average energy band gap of the well layer (324b) of the second light-emitting element (300) may be smaller than the average energy band gap of the well layer (224b) of the first light-emitting element (200). Here, the average energy band gap refers to the average value of the energy band gap included in each barrier layer. Alternatively, the sum of the indium contents of the plurality of well layers (324b) constituting the active layer (324) of the second light-emitting element (300) may be greater than the sum of the indium contents of the plurality of well layers (224b) constituting the active layer (224) of the first light-emitting element (200). At this time, the sum of the indium contents can be derived by adding the indium contents contained in each well layer.

[0217] In addition, the thickness (T42) of the electron blocking layer (326b) of the second light-emitting element (300) may be configured differently from the thickness (T41) of the electron blocking layer (226b) of the first light-emitting element (200). Accordingly, since the thickness of the electron blocking layer (226b, 326b) having a large band gap in the light-emitting elements (200, 300) is different for each light-emitting element (200, 300), the efficiency in which the emitted light is refracted and emitted without being absorbed can be increased.

[0218] The second light-emitting element (300) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), and at this time, the thickness (T42) of the electron-blocking layer (326b) of the second light-emitting element (300) may be formed to be thicker than the thickness (T41) of the electron-blocking layer (226b) of the first light-emitting element (200). The thickness (T41) of the electron-blocking layer (226b) of the first light-emitting element (200) may have a value in the range of 3 to 4 times the thickness (T42) of the electron-blocking layer (326b) of the second light-emitting element (300).

[0219] In addition, the number of pairs of the superlattice layer of the second light-emitting element (300) may be configured differently from the number of pairs of the superlattice layer of the first light-emitting element (200).

[0220] The second light-emitting element (300) may be configured to emit light with a longer peak wavelength than the first light-emitting element (200), and at this time, the number of pairs in the superlattice layer of the second light-emitting element (300) may be greater than the number of pairs in the superlattice layer of the first light-emitting element (200).

[0221] Additionally, the size of the V-pit (V) formed in the second light-emitting element (300) may be different from the size of the V-pit (V) formed in the first light-emitting element (200).

[0222] The second light-emitting element (300) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), and at this time, the size of the V-pit (V) of the second light-emitting element (300) may be formed to be larger than the size of the V-pit (V) of the first light-emitting element (200). Here, the size of the V-pit (V) may mean the upper width and depth of the V-pit (V).

[0223] Additionally, the overall thickness (T2) of the second light-emitting element (300) may be configured differently from the overall thickness (T1) of the first light-emitting element (200).

[0224] The second light-emitting element (300) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), and at this time, the thickness (T2) of the second light-emitting element (300) may be configured to be thicker than the thickness (T1) of the first light-emitting element (200). Accordingly, by making the height positions of the upper surfaces of the light-emitting elements (200, 300) different, it is possible to reduce the reflection of external light incident on the light-emitting elements (200, 300) by the surfaces of the light-emitting elements (200, 300).

[0225] Hereinafter, the structure, composition, and band gap of the third light-emitting element (400) will be compared with other light-emitting diodes, focusing on the case where the third light-emitting element (400) emits light having a third peak wavelength that is different from the first peak wavelength and the second peak wavelength, and particularly, the case where the third peak wavelength of the third light-emitting element (400) is longer than the first peak wavelength and the second peak wavelength. At this time, the third light-emitting element (400) is a diode that emits light having a third peak wavelength that is different from the first peak wavelength and the second peak wavelength, and may be a light-emitting diode that emits red light.

[0226] First, the third peak wavelength may be different from the first peak wavelength and the second peak wavelength, and the number of pairs of the barrier layer (424a) and the well layer (424b) constituting the active layer (424) of the third light-emitting element (400) may be configured differently from the number of pairs of the barrier layer (224a, 324a) and the well layer (224b, 324b) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300). In other words, the number of barrier layers (424a) and well layers (424b) constituting the active layer (424) of the third light-emitting element (400) may be configured differently from the number of barrier layers (224a, 324a) and well layers (224b, 324b) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300).

[0227] The number of pairs of the active layer (424) of the third light-emitting element (400) may be greater than the number of pairs of the active layers (224, 324) of the first and second light-emitting elements (200, 300). The number of pairs of the active layer (424) of the third light-emitting element (400) may be 1.2 to 5 times greater than the number of pairs of the first light-emitting element (200), and may be 1.5 to 5 times greater than the number of pairs of the second light-emitting element (300).

[0228] The number of pairs of the active layer (424) of the third light-emitting element (400) may be greater than the number of pairs of the active layers (224, 324) of the first and second light-emitting elements (200, 300), and the number of barrier layers (424a) or well layers (424b) constituting the active layer (424) of the third light-emitting element (400) may be greater than that of the first and second light-emitting elements (200, 300). The number of barrier layers (424a) or well layers (424b) of the active layer (424) of the third light-emitting element (400) may be 1.5 to 5 times the number of barrier layers (224a) or well layers (224b) of the active layer (224) of the first light-emitting element (200), and may be 1.5 to 5 times the number of barrier layers (324a) or well layers (324b) of the active layer (324) of the second light-emitting element (300).

[0229] In addition, the thickness of at least one barrier layer (424a) constituting the active layer (424) of the third light-emitting element (400) may be configured to be different from the thickness (T51, T52) of at least one barrier layer (224a, 324a) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300).

[0230] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), and at this time, the thickness of at least one barrier layer (424a) constituting the active layer (424) of the third light-emitting element (400) may be formed to be thicker than the thickness (T51) of at least one barrier layer (224a) constituting the active layer (224) of the first light-emitting element (200). The thickness of the barrier layer (424a) constituting the active layer (424) of the third light-emitting element (400) may have a value in the range of 1.5 to 5 times the thickness (T51) of the barrier layer (224a) constituting the active layer (224) of the first light-emitting element (200).

[0231] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the second light-emitting element (300), and at this time, the thickness of at least one barrier layer (424a) constituting the active layer (424) of the third light-emitting element (400) may be formed to be thinner than the thickness (T52) of the barrier layer (324a) constituting the active layer (324) of the second light-emitting element (300). The thickness (T52) of at least one barrier layer (324a) constituting the active layer (324) of the second light-emitting element (300) may have a value in the range of 1 to 2 times the thickness of the barrier layer (424a) constituting the active layer (424) of the third light-emitting element (400).

[0232] In addition, the thickness of at least one well layer (424b) constituting the active layer (424) of the third light-emitting element (400) may be configured differently from the thickness (T61, T62) of at least one well layer (224b, 324b) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300).

[0233] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the first light-emitting element (200), and at this time, the thickness of at least one well layer (424b) constituting the active layer (424) of the third light-emitting element (400) may be formed to be thicker than the thickness (T61) of at least one well layer (224b) constituting the active layer (224) of the first light-emitting element (200). The thickness of at least one well layer (424b) constituting the active layer (424) of the third light-emitting element (400) may have a value in the range of 1.5 to 5 times the thickness (T61) of at least one well layer (224b) constituting the active layer (224) of the first light-emitting element (200).

[0234] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the second light-emitting element (300), and at this time, the thickness of at least one well layer (424b) constituting the active layer (424) of the third light-emitting element (400) may be formed to be thinner than the thickness (T62) of at least one well layer (324b) constituting the active layer (324) of the second light-emitting element (300). The thickness (T62) of at least one well layer (324b) constituting the active layer (324) of the second light-emitting element (300) may have a value in the range of 1 to 2 times the thickness of at least one well layer (424b) constituting the active layer (424) of the third light-emitting element (400).

[0235] In addition, the composition of the Group III material of the barrier layer (424a) constituting the active layer (424) of the third light-emitting element (400) may be configured differently from the composition of the Group III material of the barrier layer (224a, 324a) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300).

[0236] In addition, the aluminum content of the barrier layer (424a) constituting the active layer (424) of the third light-emitting element (400) may be configured differently from the aluminum content of the barrier layers (224a, 324a) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300).

[0237] The third light-emitting element (400) is configured to emit light having a longer peak wavelength than the first and second light-emitting elements (200, 300), and at this time, the aluminum content of the barrier layer (424a) constituting the active layer (424) of the third light-emitting element (400) may be greater than the aluminum content of the barrier layers (224a, 324b) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300). Accordingly, the average energy band gap of the barrier layer (424a) of the third light-emitting element (400) may be smaller than the average energy band gaps of the barrier layers (224a, 324a) of the first and second light-emitting elements (200, 300). Here, the average energy band gap means an average value of the energy band gaps included in each barrier layer.

[0238] In addition, the composition of the Group III material of the well layer (424b) constituting the active layer (424) of the third light-emitting element (400) may be configured differently from the composition of the Group III material of the well layers (224b, 324b) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300).

[0239] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the first and second light-emitting elements (200, 300), and at this time, the indium content of the well layer (424b) constituting the active layer (424) of the third light-emitting element (400) may be greater than the indium content of the well layers (224b, 324b) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300).

[0240] Accordingly, the average energy band gap of the well layer (424b) of the third light-emitting element (400) may be smaller than the average energy band gap of the well layers (224b, 324b) of the first and second light-emitting elements (200, 300). Here, the average energy band gap means the average value of the energy band gap included in each barrier layer.

[0241] In addition, the type of the Group 5 material of the well layer (424b) constituting the active layer (424) of the third light-emitting element (400) may be configured differently from the type of the Group 5 material of the well layers (224b, 324b) constituting the active layers (224, 324) of the first and second light-emitting elements (200, 300).

[0242] In addition, the thickness of the electron blocking layer of the third light-emitting element (400) may be configured differently from the thickness (T41, T42) of the electron blocking layers (226b, 326b) of the first and second light-emitting elements (200, 300).

[0243] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the first and second light-emitting elements (200, 300), and at this time, the thickness of the electron-blocking layer of the third light-emitting element (400) may be formed to be thicker than the thickness (T41, T42) of the electron-blocking layers (226b, 326b) of the first and second light-emitting elements (200, 300).

[0244] In addition, the number of pairs of the superlattice layer of the third light-emitting element (400) may be configured differently from the number of pairs of the superlattice layers of the first and second light-emitting elements (200, 300).

[0245] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the first and second light-emitting elements (200, 300), and at this time, the number of pairs of the superlattice layer of the third light-emitting element (400) may be greater than the number of pairs of the superlattice layers of the first and second light-emitting elements (200, 300).

[0246] Additionally, the size of the V-pit (V) formed in the third light-emitting element (400) may be different from the size of the V-pit (V) formed in the first and second light-emitting elements (200, 300).

[0247] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the first and second light-emitting elements (200, 300), and at this time, the size of the V-pit (V) of the third light-emitting element (200, 300) may be formed to be larger than the size of the V-pit (V) of the first and second light-emitting elements (200, 300).

[0248] Additionally, the overall thickness (T3) of the third light-emitting element (400) may be configured differently from the overall thicknesses (T1, T2) of the first and second light-emitting elements (200, 300).

[0249] The third light-emitting element (400) may be configured to emit light having a longer peak wavelength than the first and second light-emitting elements (200, 300), and at this time, the thickness (T3) of the third light-emitting element (400) may be configured to be thicker than the thicknesses (T1, T2) of the first and second light-emitting elements (200, 300).

[0250] The light emitting elements (200, 300, 400) described in FIGS. 10 to 22 can also be applied to the light emitting device (1000) of FIGS. 6 to 8.

[0251]

[0252] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes to the present invention can be made without departing from the spirit and technical scope of the present invention as set forth in the claims to be described below.

[0253] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the patent claims.

Claims

1. A light-emitting element (100) comprising: a substrate (110); a plurality of protrusions (P) protruding from one surface of the substrate (110); and a light-emitting structure (120) disposed on the substrate (110); The pitch between adjacent protrusions (P) is called D1, When the length of the short side of the light emitting element (100) on the plane is A, A = α It is D1, A light emitting element (100) having α of 5 or more.

2. In claim 1, When the maximum width of the above protrusion (P) is D2, D2 is a light emitting element (100) having a value in the range of 1.5 μm to 2 μm.

3. In claim 1, A light emitting element (100) in which, when the vertical height from one surface of the substrate (110) to the apex (Q) of the protrusion (P) is D3, D3 has a value in the range of 0.8 μm to 1.2 μm.

4. In claim 1, The above D1 is a light emitting element (100) having a value in the range of 1 to 1.5 times that of the above D2.

5. In claim 1, When the vertical height from one side of the above substrate (110) to the vertex (Q) of the protrusion (P) is D3, The above D1 is a light emitting element (100) having a value in the range of 1 to 3 times that of the above D3.

6. In claim 2, When the vertical height from one side of the above substrate (110) to the vertex (Q) of the protrusion (P) is D3, The above D2 is a light emitting element (100) having a value in the range of 1 to 3 times that of the above D3.

7. In claim 1, When the maximum width of the above protrusion (P) is D2, the above A is A = β It is D2, The above β is a light emitting element (100) greater than or equal to α.

8. In claim 1, When the vertical height from one surface of the above substrate (110) to the vertex (Q) of the above protrusion (P) is D3, the above A is A = c It is D3, The above γ is a light emitting element (100) greater than 2α.

9. In claim 1, A light emitting element (100) having a height (K2) from the vertex (Q) of the protrusion (P) to the upper surface of the light emitting structure (120) in a range of 0.7 to 0.9 times the height (K1) from one surface of the substrate (110) to the upper surface of the light emitting structure (120).

10. A light-emitting device (1000) comprising a light-emitting element (100) including a substrate (110), a plurality of protrusions (P) protruding from one surface of the substrate (110), and a light-emitting structure (120) disposed on the substrate (110), and a circuit board (1010) on which the light-emitting element (100) is mounted.

11. In claim 10, It further includes a light-emitting part (800) that covers the above light-emitting element (100), When the maximum width of the protrusion (P) is D2, the vertical height from one surface of the substrate (110) to the vertex (Q) of the protrusion (P) is D3, the maximum horizontal width of the light-transmitting portion (800) is S1, and the vertical height from the upper surface of the circuit board (1010) to the vertex (N) of the light-transmitting portion (800) is S2, In luminescent device (1000).

12. In claim 11, Above Is A light emitting device (1000) having a value in the range of 1.5 to 3 times.

13. In claim 10, It further includes a molding part (900) covering the above light emitting element (100), When the vertical height from one surface of the substrate (110) to the apex (Q) of the protrusion (P) is D3, and the vertical height from the upper surface of the light emitting element (100) to the upper surface of the molding part (900) is L, The above L is a light emitting device (1000) having a value 50 times or more than the above D3.

14. In claim 13, When the pitch between adjacent protrusions (P) is D1 and the maximum width of the protrusions (P) is D2, In luminescent device (1000).

15. A substrate (110); a first light-emitting element (200) disposed on one surface of the substrate (110) and generating light having a first peak wavelength; a second light-emitting element (300) disposed on one surface of the substrate (110) and generating light having a second peak wavelength different from the first peak wavelength; and a third light-emitting element (400) disposed on one surface of the substrate (110) and generating light having a third peak wavelength different from the first and second peak wavelengths; including, The first to third light-emitting elements (200, 300, 400) each include a first conductive semiconductor layer (222, 322, 422), an active layer (224, 324, 424) of a multi-quantum well structure, and a second conductive semiconductor layer (226, 326, 426). A light-emitting device (1000) in which the number of pairs of the barrier layer and the well layer constituting the active layer (224) of the first light-emitting element (200) is different from the number of pairs of the barrier layer and the well layer constituting the active layer (324) of the second light-emitting element (300).

16. In claim 15, The second peak wavelength is longer than the first peak wavelength, A light-emitting device (1000) in which the number of pairs of the active layer (134) of the second light-emitting diode (130) is less than the number of pairs of the active layer (124) of the first light-emitting diode (120).

17. In claim 15, The second peak wavelength is longer than the first peak wavelength, A light-emitting device (1000) in which the thickness of the barrier layer constituting the active layer (134) of the second light-emitting diode (130) is thicker than the thickness of the barrier layer constituting the active layer (124) of the first light-emitting diode (120).

18. In claim 15, The second peak wavelength is longer than the first peak wavelength, A light-emitting device (1000) in which the thickness of the well layer constituting the active layer (134) of the second light-emitting diode (130) is thicker than the thickness of the well layer constituting the active layer (124) of the first light-emitting diode (120).

19. In claim 15, The second peak wavelength is longer than the first peak wavelength, A light-emitting device (1000) in which the aluminum content of the barrier layer constituting the active layer (134) of the second light-emitting diode (130) is less than the aluminum content of the barrier layer constituting the active layer (124) of the first light-emitting diode (120).

20. In claim 15, The second peak wavelength is longer than the first peak wavelength, A V-pit (V) is formed in the first to third light-emitting elements (200, 300, 400). A light emitting device (1000) in which the size of the V-pit (V) of the second light emitting element (300) is larger than the size of the V-pit (V) of the first light emitting element (200).

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